WO2021166095A1

WO2021166095A1 - Deterioration diagnosis method and deterioration diagnosis device

Info

Publication number: WO2021166095A1
Application number: PCT/JP2020/006415
Authority: WO
Inventors: 宗一郎藤原; 伸介三木
Original assignee: 三菱電機株式会社
Priority date: 2020-02-19
Filing date: 2020-02-19
Publication date: 2021-08-26
Also published as: JPWO2021166095A1; JP7183473B2

Abstract

This deterioration diagnosis method comprises: a step (S2) for placing metal thin film wiring around an insulator; a step (S1) for creating, in advance, a database defining a first correlation between the surface resistivity of the insulator and the resistance value of the metal thin film wiring during contact with a specific gas; a step (S3) for measuring resistance values of the metal thin film wiring at various measurement times; a step (S4) for using the database and the resistance values at the measurement times to estimate the surface resistivities of the insulator at the measurement times; a step (S5) for creating a relational expression expressing a second correlation between the amount of time for which high-voltage electrical equipment has been used and the surface resistivity of the insulator; a step (S6) for calculating the lifetime of the high-voltage electrical equipment corresponding, in the relational expression, to a reference surface resistivity at which the insulator will lose insulation performance; and a step (S7) for calculating the remaining lifetime of the high-voltage electrical equipment obtained by subtracting, from the lifetime, the time for which the high-voltage electrical equipment had been used at a measurement time.

Description

Deterioration diagnosis method and deterioration diagnosis device

The present disclosure relates to a deterioration diagnosis method and a deterioration diagnosis device for diagnosing deterioration of high-voltage electrical equipment including an insulator.

Conventionally, a deterioration diagnosis method for diagnosing deterioration of high-voltage electrical equipment including an insulator is known. For example, Japanese Patent Application Laid-Open No. 2002-372651 (Patent Document 1) discloses a method for diagnosing the remaining life of a power receiving and distributing facility. In the remaining life diagnosis method, insulation diagnosis is performed in which a comb-shaped electrode is provided in each of an undeteriorated part in which the material equivalent to the insulating material used in high-voltage electrical equipment is in an undeteriorated state and a deteriorated part in a deteriorated state. Using a sensor, the change in the surface resistivity of the deteriorated part and the undeteriorated part of the sensor is measured, and the deterioration is diagnosed based on the time-dependent reference curve of the surface resistivity measured in advance.

Japanese Unexamined Patent Publication No. 2002-372561

In the conventional deterioration diagnosis method as in Patent Document 1, it is necessary to measure the surface resistivity of the insulator (insulation diagnosis sensor). To measure the surface resistivity of an insulator ^{, current measurement at n (10-9} ) A and p ( ^10-12 ) A levels is required. For that purpose, high-performance measuring equipment such as a high resistance measuring instrument is required. In addition, the surface resistivity of the insulator to which the comb-shaped electrode is attached can be affected by humidity. Under the influence of humidity, the measured surface resistivity changes and the true surface resistivity of the insulation can be obscured. Further, since the degree of influence by humidity depends on the degree of deterioration of the insulating material, it may be difficult to correct the surface resistivity affected by humidity to a true value.

This disclosure is made to solve the above-mentioned problems, and is to simply diagnose the deterioration of high-voltage electrical equipment without being affected by humidity.

The deterioration diagnosis method according to one aspect of the present disclosure diagnoses deterioration of high-voltage electrical equipment including an insulator. The deterioration diagnosis method includes a step of arranging at least one metal thin film wiring around the insulator and a resistance value of at least one metal thin film wiring when both the insulator and at least one metal thin film wiring come into contact with a specific gas. A step of preliminarily creating a database that defines the first correlation between and the surface resistance of the insulator, a step of measuring the resistance value at each measurement timing of at least one metal thin film wiring, and a step of measuring the resistance value at the database and the measurement timing. The step of estimating the surface resistance of the insulator at the measurement timing using the values, the usage time of the high-voltage electrical equipment at the measurement timing, the surface resistance of the insulator at the measurement timing, and the case where the high-voltage electrical equipment is unused. From the surface resistance of the insulation, the step of creating a relational expression expressing the second correlation between the usage time of high-voltage electrical equipment and the surface resistance of the insulation, and in the relational expression, the insulation performs insulation performance. From the step of calculating the lifetime of the high-voltage electrical equipment corresponding to the reference surface resistance in case of loss and the lifetime, the usage time of the high-voltage electrical equipment at the measurement timing or at least one metal thin film wiring is arranged around the insulator. It includes a step of calculating the remaining life time of the high-pressure electric device by subtracting the usage time of the high-pressure electric device at the same timing.

The deterioration diagnostic apparatus according to another aspect of the present disclosure diagnoses deterioration of high-voltage electrical equipment including an insulator. The deterioration diagnosis device includes at least one metal thin film wiring, a database, a measurement unit, an estimation unit, a relational expression creation unit, a life calculation unit, and a remaining life calculation unit. At least one metal thin film wiring is arranged around the insulation. The database defines the first correlation between the resistance value of at least one metal thin film wiring and the surface resistivity of the insulator when both the insulation and at least one metal thin film wiring come into contact with a specific gas. The measuring unit measures the resistance value at each measurement timing of at least one metal thin film wiring. The estimation unit estimates the surface resistivity of the insulator at the measurement timing by using the database and the resistance value at the measurement timing. The relational expression creation unit is based on the usage time of the high-voltage electrical equipment at the measurement timing, the surface resistivity of the insulator at the measurement timing, and the surface resistivity of the insulator when the high-voltage electrical equipment is unused. Create a relational expression that expresses the second correlation between the usage time and the surface resistivity of the insulator. In the relational expression, the life calculation unit calculates the life time of the high-voltage electrical equipment corresponding to the reference surface resistivity when the insulator loses the insulation performance. The remaining life calculation unit calculates the remaining life time of the high-voltage electrical equipment by subtracting the usage time of the high-voltage electrical equipment at the measurement timing or the usage time of the high-voltage electrical equipment at the timing when at least one metal thin film wiring is arranged around the insulator. calculate.

According to the deterioration diagnosis method and the deterioration diagnosis apparatus according to the present disclosure, the resistance value of at least one metal thin film wiring and the surface resistivity of the insulation when both the insulation and at least one metal thin film wiring come into contact with a specific gas. By using a database that defines the first correlation with, deterioration of high-voltage electrical equipment can be easily diagnosed without being affected by humidity.

It is sectional drawing which showed schematicly the structure of the switchgear which is an example of a high voltage electric device. It is a flowchart which shows the flow of the deterioration diagnosis method which concerns on Embodiment 1. It is a graph which shows roughly the relationship between the years of use (use time) of a high-voltage electric device, and the surface resistivity. It is the schematic of the metal thin film wiring which concerns on Embodiment 1. FIG. This database defines the correlation between the surface resistivity of the insulator to be diagnosed after the NOx exposure test, which affects the insulation deterioration, and the resistance value of the metal thin film wiring. It is a block diagram which shows the functional structure of the deterioration diagnosis apparatus which executes the deterioration diagnosis method which concerns on Embodiment 1. FIG. It is a hardware block diagram of the main part of the control part of FIG. It is a functional block diagram of the control part of FIG. It is a block diagram which shows the functional structure of the deterioration diagnosis apparatus which executes the deterioration diagnosis method which concerns on Embodiment 2. FIG. It is a flowchart which shows the flow of the deterioration diagnosis method which concerns on Embodiment 2. It is a functional block diagram of the control part of FIG. It is a block diagram which shows the functional structure of the deterioration diagnosis apparatus which executes the deterioration diagnosis method which concerns on Embodiment 3. It is the schematic of the metal thin film wiring which concerns on Embodiment 4. FIG.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In principle, the same or corresponding parts in the drawings are designated by the same reference numerals and the description is not repeated.

Embodiment 1.
The method for diagnosing deterioration of high-voltage electrical equipment according to the first embodiment is a method for diagnosing deterioration of high-voltage electrical equipment provided with an insulator. High-voltage electrical equipment is composed of main circuit components such as circuit breakers, disconnectors, transformers, buses and conductors, and measuring equipment.

FIG. 1 is a cross-sectional view schematically showing the configuration of a switchgear 49, which is an example of high-voltage electrical equipment. The switchgear 49 includes a circuit breaker supported by an insulator, a disconnector, a main circuit component such as a bus / conductor, and a measuring device. In FIG. 1, the X-axis, Y-axis, and Z-axis are orthogonal to each other. In the description of FIG. 1, the + direction of the Z-axis is the upper side, and the-direction of the Z-axis is the lower side.

With reference to FIG. 1, the switchgear 49 includes

circuit breakers

50a, 50b, three horizontal bus 52s, connecting

conductors

53a, 54a, 53b, 54b, bus support plates 56,

cables

57a, 57b, and the like. A plurality of insulators 58 are provided. The circuit breaker 50a includes an operating mechanism 51a and a mold frame 55a. The circuit breaker 50b includes an operating mechanism 51b and a mold frame 55b. The connecting

conductors

53a, 54a, 53b, and 54b are supported by a plurality of insulators 58. The three horizontal bus 52s correspond to the three phases of three-phase alternating current. The bus support plate 56 collectively supports the three horizontal bus 52s.

The mold frame 55a incorporating the operation mechanism 51a and the blocking portion (not shown) is mounted on the trolley 61a. A mold frame 55b incorporating an operation mechanism 51b and a blocking portion (not shown) is mounted on a carriage 61b. The

carriages

61a and 61b can move in the X-axis direction. One end of the connecting conductor 53a is electrically connected to the cable 57a. The other end of the connecting conductor 53a is electrically connected to the upper terminal of the circuit breaker 50a. One end of the connecting conductor 54a is electrically connected to the lower terminal of the circuit breaker 50a. The other end of the connecting conductor 54a is electrically connected to one end of the connecting conductor 53b via the horizontal bus 52. The other end of the connecting conductor 53b is connected to the upper terminal of the circuit breaker 50b. One end of the connecting conductor 54b is connected to the lower terminal of the circuit breaker 50b. The other end of the connecting conductor 54b is electrically connected to the cable 57b.

Each of the mold frames 55a and 55b, the bus support plate 56, and the insulator 58 is an insulator, and is a target of deterioration diagnosis (diagnosis target) in the present disclosure. Examples of the material of the insulator include polyester resin, epoxy resin, and phenol resin.

The metal thin film wiring 10 is formed as a separate body from the diagnosis target and is installed around the diagnosis target. In FIG. 1, the metal thin film wiring 10 is installed in the vicinity of the mold frame 55b. By forming the metal thin film wiring 10 as a separate body from the diagnosis target, it is possible to suppress the electric field concentration from the metal thin film wiring 10 to the diagnosis target. In addition, the metal thin film wiring 10 can be easily replaced.

Next, the deterioration diagnosis method according to the first embodiment will be described with reference to FIGS. 2 and 3. FIG. 2 is a flowchart showing the flow of the deterioration diagnosis method according to the first embodiment. FIG. 3 is a graph schematically showing the relationship between the years of use (use time) of high-voltage electrical equipment and the surface resistivity.

With reference to FIG. 2, in step S1, a specific gas (for example, nitrogen oxide (NOx) or sulfur oxide (SOx)) that affects the deterioration of the diagnosis target is used for metal thin film wiring and high-voltage electrical equipment. Expose (contact) the subject to be diagnosed. By measuring the resistance value of the metal thin film wiring after exposure and the surface resistivity of the diagnosis target, a database that defines the correlation (first correlation) between the resistance value of the metal thin film wiring and the surface resistivity of the diagnosis target is available. Created in advance. Next, in step S2, the metal thin film wiring is arranged around the diagnosis target. The periphery of the diagnosis target is an area covered with the specific gas when the diagnosis target is exposed to a specific gas that affects the deterioration of the diagnosis target. Next, in step S3, the resistance value of the metal thin film wiring is measured at each measurement timing by a simple resistance meter such as a tester. The resistance value is measured regularly or constantly. In step S4, the resistance value of the metal thin film wiring measured in step S3 is collated with the database created in step S1, and the surface resistivity SR1 of the diagnosis target at the measurement timing of the resistance value is estimated. The measurement timing of the resistance value at which the surface resistivity SR1 is estimated is defined as the number of years of use L1 (year).

With reference to FIG. 3, in step S5, from the surface resistivity SR1 and the surface resistivity SR0 of the new product (unused product) to be diagnosed, the correlation between the surface resistivity and the years of use of the high-voltage electrical equipment ( A relational expression representing the deterioration straight line RF1 (linear relation) representing the second correlation) is created. In step S6, the life period L2 (life time) corresponding to the surface resistivity threshold SR2 (reference surface resistivity) is calculated from the deterioration straight line RF1. The threshold value SR2 is the surface resistivity when the diagnosis target loses the insulation performance and a discharge occurs in the diagnosis target. In step S7, by subtracting the years of use L1 (<L2) of the diagnosis target at the measurement timing of the metal thin film wiring or the arrangement timing of the metal thin film wiring from the life years L2 of the diagnosis target, the remaining life RL1 (remaining) of the diagnosis target is subtracted. Life time) is calculated.

Next, the details of the deterioration diagnosis method according to the first embodiment will be described with reference to FIGS. 4 and 5. FIG. 4 is a schematic view of the metal thin film wiring 10 according to the first embodiment. As shown in FIG. 4, a comb-shaped metal thin film wiring 10 is formed on the main surface of the insulating substrate 32. The ratio (W / L) of the wiring width W of the metal thin film wiring 10 to the wiring length L of the metal thin film wiring 10 is adjusted so as to have a resistance (several hundred Ω level) that can be easily measured by a tester or the like (W / L). For example, the shape of the metal thin film wiring 10 may be other than the comb shape as long as the ratio is 1000 or more). If the metal thin film wiring 10 is excessively thin or excessively long, the impedance of the metal thin film wiring 10 increases and the detection sensitivity decreases. Therefore, it is desirable that the metal thin film wiring 10 has an appropriate width and length. Further, if the metal thin film wiring 10 is excessively short, it may be difficult to form and solder the metal thin film wiring 10. Therefore, it is desirable that the metal thin film wiring 10 has an appropriate length. From the viewpoint of suppressing the increase in the impedance of the metal thin film wiring 10 due to the cross-sectional area of the metal thin film wiring 10, and from the viewpoint of suppressing the increase in the impedance of the metal thin film wiring 10 at a position near the film thickness at the time of film formation of the metal thin film wiring 10. Therefore, the thickness of the metal thin film wiring 10 is preferably 0.1 μm or more. Further, in order to measure the resistance of the metal thin film wiring 10, the metal thin film wiring 10 needs to be formed on an insulating substrate. Examples of the material of the insulating substrate 32 include glass, glass epoxy, and paper phenol.

Electrode pads 33 are arranged at both ends of the metal thin film wiring 10. The electrode pad 33 is connected to the lead wire 34. As the metal material of the metal thin film wiring 10, a metal that can accurately evaluate the environment exposed to a specific gas (for example, copper (Cu), copper alloy, silver (Ag), silver alloy, nickel (Ni), etc. It is preferably a nickel alloy, iron (Fe), and iron alloy). Even if it is a metal material other than these, other metal materials may be used as long as the exposure environment can be evaluated. Examples of the film forming method of the metal thin film wiring 10 include a sputtering method, a vapor deposition method, and a plating method.

FIG. 5 is a database that defines the correlation between the surface resistivity of the insulator to be diagnosed after the NOx exposure test, which affects the insulation deterioration, and the resistance value of the metal thin film wiring 10. The data shown in FIG. 5 is data when a polyester insulator is used as a diagnostic target and a copper thin film wiring is used as the metal thin film wiring 10. As shown in FIG. 5, a linear relationship is approximately established between the resistance value of the metal thin film wiring 10 and the surface resistivity of the diagnosis target. By using the straight line, the surface resistivity of the diagnosis target can be estimated from the resistance value of the metal thin film wiring 10.

The metal thin film wiring 10 and the diagnostic target are not limited to the copper thin film wiring and the polyester insulator, respectively. The metal thin film wiring 10 may be formed of, for example, a copper alloy, silver, silver alloy, nickel, nickel alloy, iron, or iron alloy. Further, the diagnosis target may be, for example, an epoxy insulator or a phenol insulator. In addition, even if the film thickness and width of the copper thin film change, a linear relationship is established between the resistance value of the copper thin film wiring and the surface resistivity of the polyester insulator, so it corresponds to the film thickness and width of the copper thin film. A database that defines the correlation between the resistance value and the surface resistivity of the polyester insulator may be used.

The resistance value of the metal thin film wiring 10 is not affected by humidity, unlike the surface resistivity of the diagnosis target. Therefore, by using the metal thin film wiring 10 and the database in which the relationship between the resistance value of the metal thin film wiring 10 and the surface resistivity of the diagnosis target is defined, the error due to the influence of humidity is eliminated from the surface resistivity of the diagnosis target. can do. Further, a high-performance measuring device such as a high resistance measuring instrument necessary for measuring the surface resistivity of the diagnostic object is not required, and the resistance value can be easily measured by a tester or the like. The surface resistivity of the diagnosis target can be estimated by collating the simply measured resistance value with the database. As a result, deterioration of high-voltage electrical equipment can be easily diagnosed without being affected by humidity.

FIG. 6 is a block diagram showing a functional configuration of the deterioration diagnosis device 100 that executes the deterioration diagnosis method according to the first embodiment. With reference to FIG. 6, the deterioration diagnosis device 100 is realized in the form of a control board whose operation is controlled by a program recorded on a recording medium such as a ROM (Read Only Memory). However, the control board is an example of realization of the deterioration diagnosis device 100, and the hardware configuration of the deterioration diagnosis device 100 is not limited to the configuration shown in FIG.

The deterioration diagnosis device 100 includes an input unit 101, a storage unit 102, a control unit 103, and an output unit 104. The input unit 101 includes an input device such as a keyboard, a mouse, or a tablet. The input unit 101 receives the input from the database necessary for the deterioration diagnosis of the diagnosis target 55 (for example, the mold frames 55a and 55b), and transmits the input database to the storage unit 102. For example, data of the resistance value of the copper thin film wiring and the surface resistivity of the polyester insulator is input to the input unit 101 prior to the deterioration diagnosis. Further, a predetermined voltage (for example, 100 V) is applied to the metal thin film wiring 10 by a measuring unit 20 such as a tester, and an output value from the metal thin film wiring 10 is measured by the measuring unit 20. The measured value sent from the measuring unit 20 is input to the input unit 101.

The storage unit 102 is a memory device including, for example, a ROM, a RAM (Random Access Memory), and a hard disk. The storage unit 102 stores various data such as a program for executing the deterioration diagnosis method and data on the metal thin film wiring 10 for calculating the surface resistivity from the measured value. The storage unit 102 stores various data input to the input unit 101.

The control unit 103 is realized by, for example, a microprocessor (MPU: Micro-Processing Unit). By reading the program stored in the storage unit 102, the control unit 103 executes the process related to the deterioration diagnosis according to the procedure described in the program. Twice

FIG. 7 is a hardware configuration diagram of the main part of the control unit 103 of FIG. Each function of the control unit 103 can be realized by the processing circuit 1. The processing circuit 1 includes at least one processor 1b and at least one memory 1c. The processing circuit 1 may include at least one dedicated hardware 1a together with the processor 1b and the memory 1c, or as a substitute for them.

When the processing circuit 1 includes the processor 1b and the memory 1c, each function of the deterioration diagnosis device 100 is realized by software, firmware, or a combination of software and firmware. At least one of the software and firmware is written as a program. The program is stored in the memory 1c. The processor 1b realizes each function of the deterioration diagnosis device 100 by reading and executing the program stored in the memory 1c.

The processor 1b is also called a CPU (Central Processing Unit), a processing device, an arithmetic unit, a microprocessor, a microcomputer, or a DSP. The memory 1c is composed of, for example, a non-volatile or volatile semiconductor memory such as a RAM, a ROM, a flash memory, an EPROM (Erasable Programmable Read Only Memory), or an EEPROM (Electrically Erasable Programmable Read Only Memory).

When the processing circuit 1 includes dedicated hardware 1a, the processing circuit 1 may be, for example, a single circuit, a composite circuit, a programmed processor, a parallel programmed processor, an ASIC (Application Specific Integrated Circuit), or an FPGA (Field Programmable). It is realized by Gate Array) or a combination of these.

Each of the plurality of functions of the deterioration diagnosis device 100 can be realized by the processing circuit 1. Alternatively, the plurality of functions of the deterioration diagnosis device 100 can be collectively realized by the processing circuit 1. For each function of the deterioration diagnosis device 100, a part may be realized by the dedicated hardware 1a, and the other part may be realized by software or firmware. In this way, the processing circuit 1 can realize each function of the deterioration diagnosis device 100 by the hardware 1a, the software, the firmware, or a combination thereof.

The output unit 104 outputs the diagnosis result based on the remaining life calculated by the control unit 103 to the external output device 105. The output device 105 may include, for example, a wireless device, a printer, a display, or both.

FIG. 8 is a functional block diagram of the control unit 103 of FIG. With reference to FIGS. 8 and 2, the control unit 103 includes an estimation unit 72, a relational expression creation unit 73, a life calculation unit 74, and a remaining life calculation unit 75. The estimation unit 72 estimates the surface resistivity of the diagnosis target. The relational expression creation unit 73 creates a relational expression between the years of use of the diagnosis target and the surface resistivity of the diagnosis target. The life calculation unit 74 calculates the life of the diagnosis target. The remaining life calculation unit 75 calculates the remaining life of the diagnosis target. The database 71 defines the correlation between the resistance value of the metal thin film wiring 10 derived based on the preliminary experiment and the surface resistivity of the diagnosis target.

The estimation unit 72 collates the resistance value of the metal thin film wiring 10 measured after the metal thin film wiring 10 is arranged around the diagnosis target with the database 71, and estimates the surface resistivity of the diagnosis target. That is, the estimation unit 72 executes the process of step S4.

The relational expression creation unit 73 corresponds to the surface resistivity of the diagnosis target estimated from the resistance value of the metal thin film wiring 10 and the surface resistivity of the diagnosis target having been used for 0 years (new or unused product). By connecting the points, a relational expression between the years of use of the diagnosis target and the surface resistivity of the diagnosis target is created. That is, the relational expression creation unit 73 executes the process of step S5.

The lifespan calculation unit 74 calculates the lifespan of the diagnosis target from the relational expression created by the relational expression creation unit 73 and a predetermined threshold value. That is, the life calculation unit 74 executes the process of step S6.

The remaining life calculation unit 75 subtracts the number of years of use of the diagnosis target at the measurement timing of the resistance value of the metal thin film wiring 10 or the arrangement timing of the metal thin film wiring 10 from the life years calculated by the life calculation unit 74 to obtain the remaining life. calculate. That is, the remaining life calculation unit 75 executes the process of step S7.

As described above, according to the deterioration diagnosis method or deterioration diagnosis device according to the first embodiment, deterioration of high-voltage electrical equipment can be easily diagnosed without being affected by humidity.

Embodiment 2.
In the first embodiment, by using the metal thin film wiring and the database in which the correlation between the resistance value of the metal thin film wiring and the surface resistivity of the diagnosis target is defined, a high resistance measuring meter is not required and it is easy to use. A deterioration diagnosis method that can measure resistance and does not require humidity control has been described. The resistance value of the metal thin film wiring stored in the database in the first embodiment is a value at a constant temperature (for example, 20 ° C.). Therefore, in the second embodiment, the temperature coefficient of resistance of each metal species (e.g., in the copper was ^{4.3 × 10 -3 / ℃, 4.3} × 10 -3 / ℃ in silver) utilizing Calculates the resistance value for each environment in which the diagnosis target is installed.

FIG. 9 is a block diagram showing a functional configuration of a deterioration diagnosis device 200 that executes the deterioration diagnosis method according to the second embodiment. The configuration of the deterioration diagnosis device 200 is that the control unit 103 in FIG. 6 is replaced with 103B, and the temperature from the temperature sensor 80 is input to the input unit 101. Other than these, the description is the same, so the description will not be repeated.

With reference to FIG. 9, the temperature sensor 80 outputs the ambient temperature of the metal thin film wiring 10 to the input unit 101. The control unit 103B has the temperature difference measured by the temperature sensor 80 at the temperature at which the data used for creating the database was measured and the measurement timing of the metal thin film wiring 10 or the arrangement timing of the metal thin film wiring 10, and the metal thin film wiring. The resistance temperature coefficient of the metal contained in 10 is used to correct the resistance value of the metal thin film wiring 10 in the database.

FIG. 10 is a flowchart showing the flow of the deterioration diagnosis method according to the second embodiment. The flowchart shown in FIG. 10 is a point in which step S3B is added between steps S3 and S4 of the flowchart shown in FIG. Other than this, the explanation is not repeated because it is the same.

FIG. 11 is a functional block diagram of the control unit 103B of FIG. The configuration of the control unit 103B is such that the estimation unit 72 of FIG. 8 is replaced with 72B. Other than this, the explanation is not repeated because it is the same. The estimation unit 72B executes steps S3B and S4 of FIG.

As described above, according to the deterioration diagnosis method or deterioration diagnosis device according to the second embodiment, deterioration of high-voltage electrical equipment can be easily diagnosed without being affected by humidity. Further, since the surface resistivity for each environment in which the diagnosis target is installed can be estimated, the deterioration diagnosis can be performed with higher accuracy than that of the first embodiment.

Embodiment 3.
In the first and second embodiments of the present invention, a high resistance measuring instrument can be obtained by using a database that summarizes the relationship between one metal thin film wiring and the resistance value of the metal thin film wiring and the surface resistivity of the diagnosis target. A deterioration diagnosis method that is unnecessary and can easily measure resistance and does not require humidity control was explained. In the third embodiment, the case where the number of metal thin film wirings is 2 or more will be described.

FIG. 12 is a block diagram showing a functional configuration of the deterioration diagnosis device 300 that executes the deterioration diagnosis method according to the third embodiment. The configuration of the deterioration diagnosis device 300 is that the metal thin film wiring 10B and the measurement unit 20B are added to the configuration of the deterioration diagnosis device 100 of FIG. 6, and the resistance value from the measurement unit 20B is input to the input unit 101. Other than these, the description is the same, so the description will not be repeated.

With reference to FIG. 12, the metal thin film wiring 10B is arranged around the diagnosis target 55. The measuring unit 20B measures the resistance of the metal thin film wiring 10B and outputs the resistance to the input unit 101.

According to the deterioration diagnosis method or deterioration diagnosis device according to the third embodiment, deterioration of high-voltage electrical equipment can be easily diagnosed without being affected by humidity. Further, by installing a plurality of metal thin film wirings, it is possible to consider a plurality of items that affect the insulation performance of the diagnosis target, and it is possible to perform deterioration diagnosis that is more suitable for the environment in which the diagnosis target is installed.

Embodiment 4.
In the first to third embodiments, a high resistance measuring meter is not required by using a database that summarizes the relationship between one metal thin film wiring and the resistance value of the metal thin film wiring and the surface resistivity of the diagnosis target. In addition, we explained a deterioration diagnosis method that enables simple resistance measurement and does not require humidity control. A coating agent may be applied to the metal thin film wiring and covered with the coating film.

FIG. 13 is a schematic view of the metal thin film wiring 10D according to the fourth embodiment. The configuration shown in FIG. 13 is a configuration in which a coating agent is applied to the metal thin film wiring 10 of FIG. 4 to form a coating film 31. Other than this, the explanation is not repeated because it is the same.

As the coating agent, for example, a polyurethane-based coating agent or a silicone-based coating agent can be used, but these are not necessarily used. Even when the coating film 31 is formed on the metal thin film wiring 10D, the gas that affects the deterioration of the diagnosis target 55 permeates the coating film 31, so that the metal thin film wiring 10D is almost the same as when the coating film 31 is not present. It is possible to detect the deterioration of the diagnosis target 55. Further, false detection of deterioration or detection failure can be reduced. Examples of the detection failure include a case where a person, dust, or the like comes into contact with the metal thin film wiring, and a part of the metal thin film wiring is cut.

As described above, according to the deterioration diagnosis method or deterioration diagnosis device according to the fourth embodiment, deterioration of high-voltage electrical equipment can be easily diagnosed without being affected by humidity. In addition, the influence of false detection or detection failure in deterioration diagnosis can be reduced.

Although some examples have been shown as embodiments, these are merely examples and are not intended to limit the scope of disclosure.

In the description of the first to fourth embodiments, the switchgear has been described as an example of the high-voltage electric device, but the high-voltage electric device is not limited to the switchgear. If an insulator is used for insulation between the ground or the phase of the energized portion of the high-voltage electric device and the state of deterioration of the insulation performance of the insulator is diagnosed, the first to fourth embodiments of the configuration are used. It is possible to obtain the same effect as.

Examples of high-voltage electric equipment include switch gears, power receiving and distribution equipment, transformers, control gears such as motor control centers, generators, motors, and power supply devices for power supply (for example, AC power supply devices and DC power supply devices). , Or a rectifier).

The above embodiment may be implemented in various other embodiments by omitting, replacing, or changing the contents of the disclosure without departing from the content of the disclosure. Embodiments that have been omitted, replaced, or modified are also included in the scope and content of the disclosure, and are also included in the scope of claims and the equivalent scope thereof.

It is also planned that the embodiments disclosed this time will be appropriately combined and implemented within a consistent range. It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. The scope of the present disclosure is indicated by the scope of claims rather than the above description, and is intended to include all modifications within the meaning and scope of the claims.

1 Processing circuit, 1a hardware, 1b processor, 1c memory, 10,10B, 10D metal thin film wiring, 20,20B measuring unit, 31 coating film, 32 insulating substrate, 33 electrode pad, 34 lead wire, 49 switchgear, 50a , 50b circuit breaker, 51a, 51b operation mechanism, 52 horizontal bus, 53a, 53b, 54a, 54b connection conductor, 55 diagnosis target, 55a, 55b mold frame, 56 bus support plate, 57a, 57b cable, 58 porcelain, 61a, 61b trolley, 71 database, 72, 72B estimation unit, 73 relational expression creation unit, 74 life calculation unit, 75 remaining life calculation unit, 80 temperature sensor, 100, 200, 300 deterioration diagnostic device, 101 input unit, 102 storage unit, 103, 103B control unit, 104 output unit, 105 output device.

Claims

It is a deterioration diagnosis method for diagnosing deterioration of high-voltage electrical equipment including insulation.
A step of arranging at least one metal thin film wiring around the insulator,
A database that defines the first correlation between the resistance value of the at least one metal thin film wiring and the surface resistivity of the insulator when both the insulator and the at least one metal thin film wiring come into contact with a specific gas. Steps to create in advance and
The step of measuring the resistance value at each measurement timing of the at least one metal thin film wiring, and
A step of estimating the surface resistivity of the insulator at the measurement timing using the database and the resistance value at the measurement timing, and
From the usage time of the high-voltage electric device at the measurement timing, the surface resistivity of the insulator at the measurement timing, and the surface resistivity of the insulator when the high-voltage electrical device is unused, the high-voltage electrical device And the step of creating a relational expression expressing the second correlation between the usage time of the insulation and the surface resistivity of the insulator.
In the relational expression, the step of calculating the life time of the high-voltage electric device corresponding to the reference surface resistivity when the insulating material loses the insulating performance, and
The high-voltage electrical device obtained by subtracting the usage time of the high-voltage electrical device at the measurement timing or the usage time of the high-voltage electrical device at the timing when the at least one metal thin film wiring is arranged around the insulation from the life time. Deterioration diagnosis method including a step of calculating the remaining life time of.
The deterioration diagnosis method according to claim 1, wherein the at least one metal thin film wiring is formed as a separate body from the insulator.
The deterioration diagnosis method according to claim 1 or 2, wherein the first correlation is a linear relationship.
The deterioration according to any one of claims 1 to 3, wherein the at least one metal thin film wiring contains at least one of copper, copper alloy, silver, silver alloy, nickel, nickel alloy, iron, and iron alloy. Diagnostic method.
Using the temperature difference between the measured temperature and the ambient temperature of the at least one metal thin film wiring, and the temperature coefficient of resistance of the metal contained in the at least one metal thin film wiring, the data used to create the database was used. The deterioration diagnosis method according to any one of claims 1 to 4, further comprising a step of correcting the resistance value of the at least one metal thin film wiring in the database.
The deterioration diagnosis method according to any one of claims 1 to 5, wherein the number of at least one metal thin film wiring is 2 or more.
The deterioration diagnosis method according to any one of claims 1 to 6, wherein each of the at least one metal thin film wiring is covered with a coating film through which the specific gas can permeate.
13. Deterioration diagnosis method.
The deterioration diagnosis method according to any one of claims 1 to 8, wherein the specific gas contains at least one of nitrogen oxide and sulfur oxide.
A deterioration diagnostic device that diagnoses deterioration of high-voltage electrical equipment including insulation.
With at least one metal thin film wiring arranged around the insulator,
A database that defines the first correlation between the resistance value of the at least one metal thin film wiring and the surface resistivity of the insulator when both the insulator and the at least one metal thin film wiring come into contact with a specific gas. ,
A measuring unit that measures the resistance value at each measurement timing of the at least one metal thin film wiring, and a measuring unit.
An estimation unit that estimates the surface resistivity of the insulator at the measurement timing using the database and the resistance value at the measurement timing.
From the usage time of the high-voltage electric device at the measurement timing, the surface resistivity of the insulator at the measurement timing, and the surface resistivity of the insulator when the high-voltage electrical device is unused, the high-voltage electrical device A relational expression creation unit that creates a relational expression expressing a second correlation between the usage time of the insulation and the surface resistivity of the insulating material.
In the relational expression, a life calculation unit for calculating the life time of the high-voltage electric device corresponding to the reference surface resistivity when the insulation loses the insulation performance, and a life calculation unit.
The remaining life time of the high-voltage electrical equipment obtained by subtracting the usage time of the high-voltage electrical equipment at the measurement timing or the usage time of the high-voltage electrical equipment at the timing when the at least one metal thin film wiring is arranged around the insulation. A deterioration diagnosis device including a remaining life calculation unit for calculation.
The deterioration diagnosis device according to claim 10, wherein the at least one metal thin film wiring is formed as a separate body from the insulator.
The deterioration diagnostic apparatus according to claim 10 or 11, wherein the first correlation is a linear relationship.
The deterioration according to any one of claims 10 to 12, wherein the at least one metal thin film wiring comprises at least one of copper, copper alloy, silver, silver alloy, nickel, nickel alloy, iron, and iron alloy. Diagnostic device.
The estimation unit determines the difference between the measured temperature of the data used to create the database and the temperature around the at least one metal thin film wiring, and the temperature coefficient of resistance of the metal contained in the at least one metal thin film wiring. The deterioration diagnostic apparatus according to any one of claims 10 to 13, wherein the resistance value of the at least one metal thin film wiring in the database is corrected by using the above.
The deterioration diagnostic apparatus according to any one of claims 10 to 14, wherein the number of the at least one metal thin film wiring is two or more.
The deterioration diagnostic apparatus according to any one of claims 10 to 15, wherein each of the at least one metal thin film wiring is covered with a coating film through which the specific gas can permeate.
13. Deterioration diagnostic equipment.
The deterioration diagnostic apparatus according to any one of claims 10 to 17, wherein the specific gas contains at least one of nitrogen oxide and sulfur oxide.