WO2021159614A1 - 一种阵列基板及显示面板 - Google Patents

一种阵列基板及显示面板 Download PDF

Info

Publication number
WO2021159614A1
WO2021159614A1 PCT/CN2020/087601 CN2020087601W WO2021159614A1 WO 2021159614 A1 WO2021159614 A1 WO 2021159614A1 CN 2020087601 W CN2020087601 W CN 2020087601W WO 2021159614 A1 WO2021159614 A1 WO 2021159614A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
array substrate
reflective
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/087601
Other languages
English (en)
French (fr)
Inventor
上官荣刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/957,750 priority Critical patent/US11871619B2/en
Publication of WO2021159614A1 publication Critical patent/WO2021159614A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present invention relates to the field of display, in particular to an array substrate and a display panel.
  • OLED Organic electroluminescent diode
  • the current organic electroluminescent diode display panel usually uses a reflective electrode and a semi-transparent semi-reflective electrode as the two electrode layers of the device.
  • the length of the optical cavity is between the two electrodes. Adjusting the optical cavity length of the device needs to be achieved by adjusting the thickness of the organic charge transport layer. Since the optimal optical cavity lengths of the red, green, and blue colors are different, a thicker thickness of the organic charge transport layer is required to adjust the cavity length, and the material cost is high.
  • the refractive index of traditional organic charge transport materials is generally around 1.5-1.8, which is lower than that of inorganic materials. The light emitted by the organic electroluminescent diode device is lost due to total reflection at the material interface.
  • the object of the present invention is to provide an array substrate and a display panel, by providing an optical medium layer in the array substrate, thereby transferring the optical cavity length shared by the thicker organic charge transport layer to the optical medium on the array substrate.
  • the layer while not affecting the optical cavity length of the organic electroluminescent diode device, reduces the thickness of the organic charge transport layer, effectively reducing the manufacturing cost of the display panel.
  • the light extraction efficiency of the reflected light can be effectively increased, the luminous efficiency of the organic electroluminescent diode device is improved, and the power consumption of the display panel is reduced.
  • the present invention provides an array substrate, including a base substrate, a driving circuit layer, a flat layer, a reflective layer, an optical medium layer, a black light shielding layer, a first electrode layer, and a pixel definition layer; specifically,
  • the driving circuit layer is provided with a plurality of thin film transistor units, and each thin film transistor unit is provided with a drain electrode;
  • the flat layer is provided on the driving circuit layer;
  • the reflective layer is provided on the flat layer, and the reflective layer
  • the layer includes a plurality of reflecting units, each reflecting unit is arranged corresponding to each of the thin film transistor units;
  • the optical medium layer is arranged on the reflecting layer;
  • the black light shielding layer is arranged on the flat layer, the
  • the black light-shielding layer includes a plurality of black light-shielding units, and the black light-shielding units are arranged at intervals from the reflecting unit;
  • the first electrode layer is arranged on the optical medium layer, and the first electrode layer includes a plurality
  • An anode is disposed corresponding to the reflective layer and the drain electrode, and each anode is electrically connected to the drain electrode through a via hole;
  • the pixel definition layer is disposed on the black shading unit, and the pixel definition layer It includes a plurality of pixel definition units, and two adjacent pixel definition units enclose a pixel definition groove.
  • the material of the pixel definition layer and the black light-shielding layer are the same or different.
  • the bottom of the via hole is the drain electrode; the via hole sequentially penetrates the flat layer and the black shading unit from bottom to top, or the via hole sequentially penetrates the flat layer from bottom to top , The reflective layer and the optical medium layer.
  • the material of the reflective layer includes one or an alloy of Ag, Al, Mg or Ti.
  • the material of the first electrode layer includes Ag, Mg, ITO, IZO or MgAg alloy; the transmittance of the first electrode layer in the visible light range is greater than or equal to 60%; The surface resistance is less than or equal to 100 ⁇ / ⁇ .
  • the depth range of the pixel definition groove is 1um-3um.
  • the present invention also provides a display panel, including the array substrate, an organic light-emitting layer, a second electrode layer, a light extraction layer, a sacrificial protective layer, and an encapsulation layer; specifically, the organic light-emitting layer is provided on the array substrate
  • the organic light emitting layer includes a red pixel unit, a green pixel unit, and a blue pixel unit;
  • the second electrode layer is provided on the organic light emitting layer;
  • the light extraction layer is provided on the second electrode layer
  • the sacrificial protective layer is provided on the light extraction layer; the encapsulation layer is provided on the sacrificial protective layer.
  • the refractive index of the organic light-emitting layer material is smaller than the refractive index of the optical medium layer material.
  • two of the blue pixel units are arranged in one of the pixel definition grooves.
  • the optical length from the center of the red pixel unit to the reflective layer is The optical length from the center of the green pixel unit to the reflective layer is The optical length from the center of the blue pixel unit to the reflective layer is Among them, m is an integer, and ⁇ R , ⁇ G , and ⁇ B are the wavelengths of red light, green light, and blue light, respectively.
  • the advantage of the present invention is to provide an array substrate and a display panel.
  • the reflective electrode of a traditional organic electroluminescent diode display panel is split into two, and an optical medium layer is introduced in the middle to transfer a thicker organic charge.
  • the optical cavity length shared by the layer is transferred to the optical medium layer on the array substrate, while the optical cavity length of the organic electroluminescent diode device is not affected, the thickness of the organic charge transport layer is reduced, and the manufacturing cost of the display panel is effectively reduced.
  • the light extraction efficiency of the reflected light can be effectively increased, the luminous efficiency of the organic electroluminescent diode device is improved, and the luminous efficiency is reduced.
  • the power consumption of the display panel compared with the traditional organic electroluminescent diode device structure, with the help of a high refractive index optical medium layer, the light extraction efficiency of the reflected light can be effectively increased, the luminous efficiency of the organic electroluminescent diode device is improved, and the luminous efficiency is reduced.
  • the power consumption of the display panel is reduced.
  • FIG. 1 is a schematic diagram of the structure of an array substrate in the first embodiment of the present invention
  • FIG. 2 is a schematic diagram of the structure of an array substrate in the second embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a structure of a display panel in an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of another display panel in an embodiment of the present invention.
  • FIG. 5 is the relative positional relationship of the film layers of the organic light-emitting layer in the embodiment of the present invention, and mainly reflects the structure diagram of the organic light-emitting layer.
  • Base substrate 2. Drive circuit layer, 3. Flat layer, 4. Reflective layer,
  • an array substrate 100 which includes a base substrate 1, a driving circuit layer 2, a flat layer 3, a reflective layer 4, an optical medium layer 5, a black light-shielding layer 6, The first electrode layer 7 and the pixel definition layer 8.
  • the drive circuit layer 2 is provided with a plurality of thin film transistor units 20, and each thin film transistor unit 20 is provided with a drain electrode 252;
  • the flat layer 3 is provided on the drive circuit layer 2;
  • the reflective layer 4 is provided on the flat layer 3, the reflective layer 4 includes a plurality of reflective units 41, each reflective unit 41 is provided corresponding to each of the thin film transistor units 20;
  • the optical medium layer 5 is provided on the reflective Layer 4;
  • the black light-shielding layer 6 is provided on the flat layer 3, the black light-shielding layer 6 includes a plurality of black light-shielding units 61, the black light-shielding units 61 and the reflecting unit 41 are spaced apart, for Shading or absorbing lateral light;
  • the first electrode layer 7 is provided on the optical medium layer 5,
  • the first electrode layer 7 includes a plurality of anodes 71, each anode 71 is connected to the reflective layer 4 and the leakage
  • the electrodes 252 are correspondingly arranged, and
  • the pixel defining groove 82 is used for arranging an organic light-emitting layer between two electrodes to form red, green, and blue pixel units. Since the optimal optical cavity lengths of red, green, and blue are different, the cavity length needs to be adjusted.
  • the function of setting the optical medium layer 5 is to replace the part of the optical length of the light-emitting layer with the optical medium layer 5. , And keep the required total optical length unchanged, so that the thickness of the light-emitting layer can be reduced, thereby saving materials and reducing manufacturing costs.
  • the via hole 10 and the pixel defining groove 82 are patterned and formed by a yellow light process.
  • the pixel defining layer 8 and the black light shielding layer 6 are made of the same material, that is, the pixel defining layer 8 is also black for shielding light or absorbing lateral light.
  • the material of the pixel definition layer 8 and the black light shielding layer 6 may also be different to satisfy different functions or effects.
  • the bottom of the via hole 10 is the drain electrode 252; the via hole 10 sequentially penetrates the flat layer 3 and the black shading unit 61 from bottom to top.
  • the material of the reflective layer 4 includes one or more alloys of Ag, Al, Mg or Ti; the thickness of the reflective layer 4 ranges from 50 nm to 300 nm, preferably from 100 nm to 200 nm.
  • the material of the optical medium layer 5 includes any one of TiOx, NbOx, ZrOx, ZnOx, CeOx, TaOx, MoOx, SiNx, ITO, IZO, ZnSx or ZnSex.
  • the material of the first electrode layer 7 includes Ag, Mg, ITO, IZO or MgAg alloy; the transmittance of the first electrode layer 7 in the visible light range is greater than or equal to 60%, preferably greater than Equal to 80%; the surface resistance of the first electrode layer 7 is less than or equal to 100 ⁇ / ⁇ , preferably less than or equal to 30 ⁇ / ⁇ .
  • the depth range of the pixel defining groove 82 is 1um-3um, preferably 1.5um-2.5um.
  • the thin film transistor unit 20 of the driving circuit layer 2 includes an active layer 21, a gate insulating layer 22, a gate layer 23, an interlayer insulating layer 24, and an active layer 21, a gate insulating layer 22, a gate layer 23, an interlayer insulating layer 24,
  • the source-drain layer 25 includes a source electrode 251 and a drain electrode 252.
  • the gate insulating layer 22 and the interlayer insulating layer 24 are stacked by inorganic layers such as SiN/SiOx
  • the active layer 21 is a low-temperature polysilicon layer composed of low-temperature polysilicon
  • the material of the gate layer 23 includes Mo
  • the source and drain layer 25 is a stacked structure of Ti/Al/Ti.
  • the second embodiment includes most of the technical features of the first embodiment.
  • the difference is that the via hole 10 in the second embodiment sequentially penetrates the flat layer 3 from bottom to top.
  • both of the functions of providing the via hole 10 are to electrically connect the first electrode layer 7 and the drain electrode 252 of the thin film transistor unit 20.
  • one embodiment of the present invention also provides a display panel 200, which includes the array substrate 100, an organic light emitting layer 210, a second electrode layer 220, a light extraction layer 230, a sacrificial protective layer 240, and Encapsulation layer 250;
  • the organic light-emitting layer 210 is provided on the array substrate 100, and the organic light-emitting layer 210 includes a red pixel unit 2101, a green pixel unit 2102, and a blue pixel unit 2103;
  • the second The electrode layer 220 is provided on the organic light emitting layer 210, preferably the second electrode layer 220 is a cathode; the light extraction layer 230 is provided on the second electrode layer 220; the sacrificial protection layer 240 is provided on the On the light extraction layer 230; the encapsulation layer 250 is provided on the sacrificial protective layer 240.
  • the refractive index of the material of the organic light-emitting layer 210 is smaller than the refractive index of the material of the optical medium layer 5.
  • the high refractive index optical medium layer 5 can effectively increase the light extraction efficiency of the reflected light, improve the luminous efficiency, and reduce the power consumption of the display panel 200.
  • two blue pixel units 2103 are provided in one pixel defining groove 82.
  • the blue pixel unit 2103 adopts a series structure, and two blue pixel units 2103 are stacked to achieve the purpose of increasing the brightness of blue light.
  • the red pixel unit 2101, the green pixel unit 2102, and the blue pixel unit 2103 have different opening sizes, that is, the opening sizes of the pixel definition groove 82 are different, and the pixel definition groove 82 corresponds to the blue pixel unit.
  • the opening area of the color pixel unit 2103 is larger than the opening area of the corresponding red pixel unit 2101, and is larger than the opening area of the corresponding green pixel unit 2102. It can be understood that the structure in which two blue pixel units 2103 are stacked is applicable to the array substrate 100 of Embodiment 1 and Embodiment 2.
  • the optical length from the center of the red pixel unit 2101 to the reflective layer 4 is The optical length from the center of the green pixel unit 2102 to the reflective layer 4 is The optical length from the center of the blue pixel unit 2103 to the reflective layer 4 is Among them, m is an integer, and ⁇ R , ⁇ G , and ⁇ B are the wavelengths of red light, green light, and blue light, respectively.
  • the organic light emitting layer 210 includes a first charge transport layer 211, a light emitting layer 212, and a second charge transport layer 213 in order from bottom to top.
  • a first charge injection layer 214 may be further included between the first electrode layer 7 and the first charge transport layer 211, and a first charge injection layer 214 may also be included between the second electrode layer 220 and the second charge transport layer 213.
  • the second charge injection layer 215 is included.
  • the light-emitting color of the organic light-emitting layer 210 may be one of three colors of red, green, and blue.
  • the light-emitting colors of the organic light-emitting layers 210 in the two adjacent pixel definition grooves 82 are different, that is, The red pixel unit 2101, the green pixel unit 2102, and the blue pixel unit 2103 are not disposed in two adjacent pixel definition grooves 82.
  • the thickness of any one or each of the optical medium layer 5, the first electrode layer 7, the first charge injection layer 214, and the first charge transport layer 211 can be adjusted to control the The optical length from the center of the organic light-emitting layer 210 to the reflective layer 4; the purpose of controlling the optical length is to make the center of the organic light-emitting layer 210 fall at a position that satisfies the optical length of the formula, so as to achieve the highest luminous efficiency.
  • the function of providing the optical medium layer 5 is to replace part of the optical length of the first charge injection layer 214 and the first charge transport layer 211 with the optical medium layer 5, and maintain the required total length. In this way, the thickness of the first charge injection layer 214 and the first charge transport layer 211 can be reduced, thereby saving materials and reducing manufacturing costs.
  • the advantage of the present invention is to provide an array substrate 100 and a display panel 200.
  • the reflective electrode of a traditional organic electroluminescent diode display panel is split into two, and an optical medium layer 5 is introduced in the middle, so that the thicker
  • the optical cavity length shared by the organic charge transport layer is transferred to the optical medium layer 5 on the array substrate 100, which reduces the thickness of the organic charge transport layer and effectively reduces the display panel 200 without affecting the optical cavity length of the organic electroluminescent diode device.
  • the production cost is to provide an array substrate 100 and a display panel 200.
  • the light extraction efficiency of the reflected light can be effectively increased, and the luminous efficiency of the organic electroluminescent diode device can be improved and reduced
  • the power consumption of the display panel 200 is shown.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种阵列基板及显示面板，该显示面板（200）包括阵列基板（100），阵列基板（100）包括衬底基板（1）、驱动电路层（2）、平坦层（3）、反射层（4）、光学介质层（5）、黑色遮光层（6）、第一电极层（7）以及像素定义层（8）。

Description

一种阵列基板及显示面板 技术领域
本发明涉及显示领域，尤其涉及一种阵列基板及显示面板。
背景技术
有机电致发光二极管(OLED)显示面板是一种新兴的平板显示器，其具备自发光，对比度高，厚度薄，视角广，反应速度快，可用于柔性显示面板等优异的特性，因此具有非常好的发展前景。
目前的有机电致发光二极管显示面板，通常是反射电极与半透明半反射电极来作为器件的两个电极层。两个电极之间为其光学腔长。调节器件的光学腔长，需要通过调节有机电荷传输层的厚度来实现。由于红、绿、蓝三色的最佳光学腔长不同，因此需要较厚的有机电荷传输层厚度来进行调节腔长，材料成本高昂。同时传统有机电荷传输材料的折射率一般都在1.5-1.8左右，折射率比无机材料低，有机电致发光二极管器件发出的光在材料界面处因为全反射等损耗较多。
技术问题
本发明的目的在于，提供一种阵列基板及显示面板，通过在所述阵列基板中设置光学介质层，以此将较厚的有机电荷传输层分担的光学腔长转移到阵列基板上的光学介质层，在不影响有机电致发光二极管器件光学腔长的同时，减少了有机电荷传输层的厚度，有效减少显示面板的制作成本。同时，借助于高折射率的光学介质层，可以有效增加经反射后光线的出光效率，提高了有机电致发光二极管器件的发光效率，降低了显示面板的功耗。
技术解决方案
为了实现上述目的，本发明提供一种阵列基板，包括衬底基板、驱动电路层、平坦层、反射层、光学介质层、黑色遮光层、第一电极层以及像素定义层；具体地讲，所述驱动电路层设有多个薄膜晶体管单元，每一薄膜晶体管单元设有漏电极；所述平坦层设于所述驱动电路层上；所述反射层设于所述平坦层上，所述反射层包括多个反射单元，每一反射单元与每一所述薄膜晶体管单元对应 设置；所述光学介质层设于所述反射层上；所述黑色遮光层设于所述平坦层上，所述黑色遮光层包括多个黑色遮光单元，所述黑色遮光单元与所述反射单元间隔设置；所述第一电极层设于所述光学介质层上，所述第一电极层包括多个阳极，每一阳极与所述反射层及所述漏电极对应设置，每一阳极穿过一过孔与所述漏电极电连接；所述像素定义层设于所述黑色遮光单元上，所述像素定义层包括多个像素定义单元，相邻两个所述像素定义单元围成一像素定义槽。
进一步地，所述像素定义层与所述黑色遮光层的材质相同或者不同。
进一步地，所述过孔的孔底为所述漏电极；所述过孔从下至上依次贯穿所述平坦层以及所述黑色遮光单元，或者所述过孔从下至上依次贯穿所述平坦层、所述反射层以及所述光学介质层。
进一步地，所述反射层的材质包括Ag、Al、Mg或Ti中的一种或几种的合金。
进一步地，所述光学介质层的材质包括TiOx、NbOx、ZrOx、ZnOx、CeOx、TaOx、MoOx、SiNx、ITO、IZO、ZnSx或ZnSex中的任一种。
进一步地，所述第一电极层的材质包括Ag、Mg、ITO、IZO或MgAg合金；所述第一电极层在可见光范围内的透过率为大于等于60％；所述第一电极层的面电阻小于等于100Ω/□。
进一步地，所述像素定义槽的深度范围为1um-3um。
本发明还提供一种显示面板，包括所述阵列基板、有机发光层、第二电极层、光取出层、牺牲保护层以及封装层；具体地讲，所述有机发光层设于所述阵列基板上，所述有机发光层包括红色像素单元、绿色像素单元以及蓝色像素单元；所述第二电极层设于所述有机发光层上；所述光取出层设于所述第二电极层上；所述牺牲保护层设于所述光取出层上；所述封装层设于所述牺牲保护层上。
进一步地，所述有机发光层材料的折射率小于所述光学介质层材料的折射率。
进一步地，在一个所述像素定义槽内设置两个所述蓝色像素单元。
进一步地，所述红色像素单元的中心到所述反射层的光学长度为
Figure PCTCN2020087601-appb-000001
所述绿色像素单元的中心到所述反射层的光学长度为
Figure PCTCN2020087601-appb-000002
所述蓝色像素单元的中心到所述反射层的光学长度为
Figure PCTCN2020087601-appb-000003
其中，m为整数，λ R、λ G、λ B分别为红光、绿光及蓝光的波长。
有益效果
本发明的优点在于，提供一种阵列基板及显示面板，通过将传统的有机电致发光二极管显示面板的反射电极一拆为二，在中间引入光学介质层，以此将较厚的有机电荷传输层分担的光学腔长转移到阵列基板上的光学介质层，在不影响有机电致发光二极管器件光学腔长的同时，减少了有机电荷传输层的厚度，有效减少显示面板的制作成本。同时，相比于传统的有机电致发光二极管器件结构，借助于高折射率的光学介质层，可以有效增加经反射后光线的出光效率，提高了有机电致发光二极管器件的发光效率，降低了显示面板的功耗。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明第一实施例中一种阵列基板的结构示意图；
图2为本发明第二实施例中一种阵列基板的结构示意图；
图3为本发明实施例中一种显示面板的结构示意图；
图4为本发明实施例中另一种显示面板的结构示意图；
图5为本发明实施例中所述有机发光层的膜层相对位置关系，主要体现所述有机发光层的结构示意图。
图中部件标识如下：
1、衬底基板，2、驱动电路层，3、平坦层，4、反射层，
5、光学介质层，6、黑色遮光层，7、第一电极层，8、像素定义层，
10、过孔，20、薄膜晶体管单元，21、有源层，22、栅极绝缘层，
23、栅极层，24、层间绝缘层，25、源漏极层，41、反射单元，
61、黑色遮光单元，71、阳极，81、像素定义单元，82、像素定义槽，
100、阵列基板，200、显示面板，210、有机发光层，
211、第一电荷传输层，212、发光层，213、第二电荷传输层，
214、第一电荷注入层，215、第二电荷注入层，220、第二电极层，
230、光取出层，240、牺牲保护层，250、封装层，251、源电极，
252、漏电极，2101、红色像素单元，2102、绿色像素单元，
2103、蓝色像素单元。
本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明的附图仅用于示意相对位置关系和电连接关系，某些部位的层厚采用了夸示的绘图方式以便于理解，附图中的层厚并不代表实际层厚的比例关系。
实施例1
请参阅图1所示，本发明第一实施例中提供一种阵列基板100，包括衬底基板1、驱动电路层2、平坦层3、反射层4、光学介质层5、黑色遮光层6、第一电极层7以及像素定义层8。
具体地讲，所述驱动电路层2设有多个薄膜晶体管单元20，每一薄膜晶体管单元20设有漏电极252；所述平坦层3设于所述驱动电路层2上；所述反射层4设于所述平坦层3上，所述反射层4包括多个反射单元41，每一反射单元41与每一所述薄膜晶体管单元20对应设置；所述光学介质层5设于所述反射层4上；所述黑色遮光层6设于所述平坦层3上，所述黑色遮光层6包括多个黑色遮光单元61，所述黑色遮光单元61与所述反射单元41间隔设置，用于遮光或吸收横向光线；所述第一电极层7设于所述光学介质层5上， 所述第一电极层7包括多个阳极71，每一阳极71与所述反射层4及所述漏电极252对应设置，每一阳极71穿过一过孔10与所述漏电极252电连接；所述像素定义层8设于所述黑色遮光单元61上，所述像素定义层8包括多个像素定义单元81，相邻两个所述像素定义单元81围成一像素定义槽82，即所述黑色遮光单元61一一对应的位于所述像素定义单元81的正下方。
所述像素定义槽82用于设置两个电极之间的有机发光层，以形成红、绿、蓝像素单元。由于红、绿、蓝三色的最佳光学腔长不同，因此需要调节腔长，设置所述光学介质层5的作用是把在所述发光层的光学长度的部分长度由光学介质层5替代，并保持所需的总的光学长度不变，以此可以减少所述发光层的厚度，从而节约材料，降低制作成本。
其中，所述过孔10及所述像素定义槽82通过黄光工艺图案化形成。
为进一步提高遮光效果，在本实施例中，所述像素定义层8与所述黑色遮光层6的材质相同，即所述像素定义层8也为黑色，用于遮光或吸收横向光线。
值得注意的是，所述像素定义层8与所述黑色遮光层6的材质也可不同，以满足不同的功能或效果。
本实施例中，所述过孔10的孔底为所述漏电极252；所述过孔10从下至上依次贯穿所述平坦层3以及所述黑色遮光单元61。
本实施例中，所述反射层4的材质包括Ag、Al、Mg或Ti中的一种或几种的合金；所述反射层4的厚度范围为50nm-300nm，优选为100nm-200nm。
本实施例中，所述光学介质层5的材质包括TiOx、NbOx、ZrOx、ZnOx、CeOx、TaOx、MoOx、SiNx、ITO、IZO、ZnSx或ZnSex中的任一种。
本实施例中，所述第一电极层7的材质包括Ag、Mg、ITO、IZO或MgAg合金；所述第一电极层7在可见光范围内的透过率为大于等于60％，优选为大于等于80％；所述第一电极层7的面电阻小于等于100Ω/□，优选为小于等于30Ω/□。
本实施例中，所述像素定义槽82的深度范围为1um-3um，优选为1.5um-2.5um。
请参阅图1所示，所述驱动电路层2的所述薄膜晶体管单元20包括从下至上依次层叠设置的有源层21、栅极绝缘层22、栅极层23、层间绝缘层24、 源漏极层25，所述源漏极层25包括源电极251和漏电极252。其中所述栅极绝缘层22、所述层间绝缘层24由SiN/SiOx等无机层层叠设置，所述有源层21为低温多晶硅构成的低温多晶硅层，所述栅极层23的材料包括Mo，所述源漏极层25为Ti/Al/Ti的层叠结构。
实施例2
请参阅图2所示，在第二实施例中包括第一实施例中大部分的技术特征，其区别在于，第二实施例中的所述过孔10从下至上依次贯穿所述平坦层3、所述反射层4以及所述光学介质层5，而不是第一实施例中的所述过孔10从下至上依次贯穿所述平坦层3以及所述黑色遮光单元61。但两者设置所述过孔10的作用均是使所述第一电极层7与所述薄膜晶体管单元20的漏电极252实现电连接。
请参阅图3所示，本发明其中一实施例中还提供一种显示面板200，包括所述阵列基板100、有机发光层210、第二电极层220、光取出层230、牺牲保护层240以及封装层250；具体地讲，所述有机发光层210设于所述阵列基板100上，所述有机发光层210包括红色像素单元2101、绿色像素单元2102以及蓝色像素单元2103；所述第二电极层220设于所述有机发光层210上，优选所述第二电极层220为阴极；所述光取出层230设于所述第二电极层220上；所述牺牲保护层240设于所述光取出层230上；所述封装层250设于所述牺牲保护层240上。
本实施例中，所述有机发光层210材料的折射率小于所述光学介质层5材料的折射率。借助于高折射率的所述光学介质层5可以有效增加经反射后光线的出光效率，提高发光效率，降低所述显示面板200的功耗。
请参阅图4所示，在另一个实施例中，在一个所述像素定义槽82内设置两个所述蓝色像素单元2103。所述蓝色像素单元2103采用串联式结构，将两个蓝色像素单元2103叠置起来，以达到提高发蓝光亮度的目的。同时，所述红色像素单元2101、所述绿色像素单元2102以及所述蓝色像素单元2103的开口大小不同，即所述像素定义槽82的开口大小不同，所述像素定义槽82对应所述蓝色像素单元2103的开口面积大于对应所述红色像素单元2101的开口面积，并大于对应所述绿色像素单元2102的开口面积。可以理解的是，将 两个蓝色像素单元2103叠置起来的结构均适用于实施例1和实施例2的所述阵列基板100。
本实施例中，所述红色像素单元2101的中心到所述反射层4的光学长度为
Figure PCTCN2020087601-appb-000004
所述绿色像素单元2102的中心到所述反射层4的光学长度为
Figure PCTCN2020087601-appb-000005
所述蓝色像素单元2103的中心到所述反射层4的光学长度为
Figure PCTCN2020087601-appb-000006
其中，m为整数，λ R、λ G、λ B分别为红光、绿光及蓝光的波长。
本实施例中，所述有机发光层210采用真空蒸镀或者旋涂或者喷墨打印方法制作。
请参阅图5所示，所述有机发光层210从下至上依次包括第一电荷传输层211、发光层212、第二电荷传输层213。在所述第一电极层7与所述第一电荷传输层211之间还可以包含第一电荷注入层214，在所述第二电极层220与所述第二电荷传输层213之间还可以包含第二电荷注入层215。所述有机发光层210的发光颜色可以为红、绿、蓝三种颜色中的一种，相邻两个所述的像素定义槽82内的所述有机发光层210发光颜色不同，亦即所述红色像素单元2101、所述绿色像素单元2102以及所述蓝色像素单元2103不设置于相邻两个所述像素定义槽82内。
可以通过调整所述光学介质层5、所述第一电极层7、所述第一电荷注入层214及所述第一电荷传输层211中任意一层或每一层的厚度，来调控所述有机发光层210中心到所述反射层4的光学长度；控制光学长度的目的在于使所述有机发光层210中心落在满足所述公式光学长度的位置，以实现最高的发光效率。
设置所述光学介质层5的作用是把在所述第一电荷注入层214和所述第一电荷传输层211的光学长度的部分长度由所述光学介质层5替代，并保持所需的总的光学长度不变，以此可以减少所述第一电荷注入层214和所述第一电荷 传输层211的厚度，从而节约材料，降低制作成本。
本发明的优点在于，提供一种阵列基板100及显示面板200，通过将传统的有机电致发光二极管显示面板的反射电极一拆为二，在中间引入光学介质层5，以此将较厚的有机电荷传输层分担的光学腔长转移到阵列基板100上的光学介质层5，在不影响有机电致发光二极管器件光学腔长的同时，减少了有机电荷传输层的厚度，有效减少显示面板200的制作成本。同时，相比于传统的有机电致发光二极管器件结构，借助于高折射率的光学介质层5，可以有效增加经反射后光线的出光效率，提高了有机电致发光二极管器件的发光效率，降低了显示面板200的功耗。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种阵列基板，其包括：
    衬底基板；
    驱动电路层，设有多个薄膜晶体管单元，每一薄膜晶体管单元设有漏电极；
    平坦层，设于所述驱动电路层上；
    反射层，设于所述平坦层上，所述反射层包括多个反射单元，每一反射单元与每一所述薄膜晶体管单元对应设置；
    光学介质层，设于所述反射层上；
    黑色遮光层，设于所述平坦层上，所述黑色遮光层包括多个黑色遮光单元，所述黑色遮光单元与所述反射单元间隔设置；
    第一电极层，设于所述光学介质层上，所述第一电极层包括多个阳极，每一阳极与所述反射层及所述漏电极对应设置，每一阳极穿过一过孔与所述漏电极电连接；以及
    像素定义层，设于所述黑色遮光单元上，所述像素定义层包括多个像素定义单元，相邻两个所述像素定义单元围成一像素定义槽。
  2. 根据权利要求1所述的阵列基板，其中，所述像素定义层与所述黑色遮光层的材质相同。
  3. 根据权利要求1所述的阵列基板，其中，所述过孔的孔底为所述漏电极；所述过孔从下至上依次贯穿所述平坦层以及所述黑色遮光单元，或者所述过孔从下至上依次贯穿所述平坦层、所述反射层以及所述光学介质层。
  4. 根据权利要求1所述的阵列基板，其中，所述反射层的材质包括Ag、Al、Mg或Ti中的一种或几种的合金。
  5. 根据权利要求1所述的阵列基板，其中，所述光学介质层的材质包括TiOx、NbOx、ZrOx、ZnOx、CeOx、TaOx、MoOx、SiNx、ITO、IZO、ZnSx或ZnSex中的任一种。
  6. 根据权利要求1所述的阵列基板，其中，所述像素定义槽的深度范围为1um-3um。
  7. 一种显示面板，其包括：
    权利要求1所述的阵列基板；
    有机发光层，设于所述阵列基板上，所述有机发光层包括红色像素单元、绿色像素单元以及蓝色像素单元；
    第二电极层，设于所述有机发光层上；
    光取出层，设于所述第二电极层上；
    牺牲保护层，设于所述光取出层上；以及
    封装层，设于所述牺牲保护层上。
  8. 根据权利要求7所述的显示面板，其中，所述有机发光层材料的折射率小于所述光学介质层材料的折射率。
  9. 根据权利要求7所述的显示面板，其中，在一个所述像素定义槽内设置两个所述蓝色像素单元。
  10. 根据权利要求7所述的显示面板，其中，
    所述红色像素单元的中心到所述反射层的光学长度为
    Figure PCTCN2020087601-appb-100001
    所述绿色像素单元的中心到所述反射层的光学长度为
    Figure PCTCN2020087601-appb-100002
    所述蓝色像素单元的中心到所述反射层的光学长度为
    Figure PCTCN2020087601-appb-100003
    其中，m为整数，λ R、λ G、λ B分别为红光、绿光及蓝光的波长。
PCT/CN2020/087601 2020-02-12 2020-04-28 一种阵列基板及显示面板 Ceased WO2021159614A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/957,750 US11871619B2 (en) 2020-02-12 2020-04-28 Array substrate with optical dielectric layer and display panel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010088129.8 2020-02-12
CN202010088129.8A CN111261801A (zh) 2020-02-12 2020-02-12 一种阵列基板及显示面板

Publications (1)

Publication Number Publication Date
WO2021159614A1 true WO2021159614A1 (zh) 2021-08-19

Family

ID=70951425

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/087601 Ceased WO2021159614A1 (zh) 2020-02-12 2020-04-28 一种阵列基板及显示面板

Country Status (3)

Country Link
US (1) US11871619B2 (zh)
CN (1) CN111261801A (zh)
WO (1) WO2021159614A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582924B (zh) * 2020-11-30 2025-07-29 华为技术有限公司 一种有机发光显示面板及显示装置
CN115179730B (zh) * 2022-04-27 2024-04-26 重庆长安汽车股份有限公司 一种多功能车用遮阳板及其车辆

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661951A (zh) * 2008-08-29 2010-03-03 富士胶片株式会社 彩色显示装置及其制造方法
US20160276615A1 (en) * 2015-03-18 2016-09-22 Samsung Display Co., Ltd. Organic light emitting display panel and method of manufacturing the same
CN109817832A (zh) * 2019-02-13 2019-05-28 合肥鑫晟光电科技有限公司 一种oled显示基板及其制备方法、显示装置
CN110034159A (zh) * 2017-12-19 2019-07-19 乐金显示有限公司 显示装置
CN110085775A (zh) * 2019-05-07 2019-08-02 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791271B2 (en) * 2006-02-24 2010-09-07 Global Oled Technology Llc Top-emitting OLED device with light-scattering layer and color-conversion
KR20160083986A (ko) * 2015-01-02 2016-07-13 삼성디스플레이 주식회사 유기발광 표시장치
KR102603595B1 (ko) * 2016-08-31 2023-11-20 엘지디스플레이 주식회사 마이크로 캐비티 구조를 갖는 디스플레이 장치 및 그의 제조 방법
JP7034584B2 (ja) * 2016-10-21 2022-03-14 キヤノン株式会社 表示装置及び撮像装置
CN108735104B (zh) * 2018-06-01 2020-11-03 京东方科技集团股份有限公司 显示面板、显示装置和制作显示面板的方法
KR20220002369A (ko) * 2019-04-26 2022-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 디바이스, 발광 장치, 전자 기기, 및 조명 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661951A (zh) * 2008-08-29 2010-03-03 富士胶片株式会社 彩色显示装置及其制造方法
US20160276615A1 (en) * 2015-03-18 2016-09-22 Samsung Display Co., Ltd. Organic light emitting display panel and method of manufacturing the same
CN110034159A (zh) * 2017-12-19 2019-07-19 乐金显示有限公司 显示装置
CN109817832A (zh) * 2019-02-13 2019-05-28 合肥鑫晟光电科技有限公司 一种oled显示基板及其制备方法、显示装置
CN110085775A (zh) * 2019-05-07 2019-08-02 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法

Also Published As

Publication number Publication date
US11871619B2 (en) 2024-01-09
US20230141669A1 (en) 2023-05-11
CN111261801A (zh) 2020-06-09

Similar Documents

Publication Publication Date Title
US11222937B2 (en) Display unit with light emitting layer between first and second electrodes
CN110010736B (zh) 电致发光显示装置
KR102090200B1 (ko) 유기 발광 표시 장치
TW201926676A (zh) 有機發光二極體顯示器
KR102436248B1 (ko) 유기발광표시장치
WO2020140767A1 (zh) 透明显示基板及其制作方法和透明显示面板
KR102540135B1 (ko) 유기발광표시장치
CN107579102A (zh) 显示面板及显示装置
WO2021082146A1 (zh) 显示面板及其制造方法
CN106373978B (zh) 薄膜晶体管阵列基板和包括其的有机发光二极管显示设备
CN203631557U (zh) 有机发光显示面板、显示装置
KR102042534B1 (ko) 유기 전계 발광 표시 패널 및 그 제조 방법
CN104347680A (zh) 一种amoled显示面板及其制作方法、显示装置
KR20190069940A (ko) 유기 발광 표시 장치
WO2020232948A1 (zh) 阵列基板及其制造方法、有机发光二极管显示器
WO2023015488A1 (zh) 显示基板及电子装置
CN110459586B (zh) 一种阵列基板和显示面板
KR102723296B1 (ko) 전계발광 표시장치
WO2019001362A1 (zh) 显示基板及其制造方法、显示面板及显示装置
US20240260410A1 (en) Organic light-emitting diode display device and method of manufacturing the same
KR102839064B1 (ko) 유기발광 표시장치
WO2021159614A1 (zh) 一种阵列基板及显示面板
WO2023015487A1 (zh) 显示基板及电子装置
CN109300945B (zh) 阵列基板及制作方法、显示面板
WO2020220551A1 (zh) 显示面板及其制作方法、显示模组

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20918535

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20918535

Country of ref document: EP

Kind code of ref document: A1