WO2021134692A1 - Transducteur et procédé de fabrication correspondant - Google Patents

Transducteur et procédé de fabrication correspondant Download PDF

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Publication number
WO2021134692A1
WO2021134692A1 PCT/CN2019/130931 CN2019130931W WO2021134692A1 WO 2021134692 A1 WO2021134692 A1 WO 2021134692A1 CN 2019130931 W CN2019130931 W CN 2019130931W WO 2021134692 A1 WO2021134692 A1 WO 2021134692A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
photoresist
wafer
silicon
gap
Prior art date
Application number
PCT/CN2019/130931
Other languages
English (en)
Chinese (zh)
Inventor
吴健兴
但强
吴伟昌
黎家健
Original Assignee
瑞声声学科技(深圳)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞声声学科技(深圳)有限公司 filed Critical 瑞声声学科技(深圳)有限公司
Priority to PCT/CN2019/130931 priority Critical patent/WO2021134692A1/fr
Publication of WO2021134692A1 publication Critical patent/WO2021134692A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

Definitions

  • Step S107 Coat a layer of photoresist on the etched surface, develop the photoresist according to the preset first gap, and then treat the first silicon according to the result of the development of the photoresist.
  • the layer is etched to the position of the first oxide layer to obtain the first gap; then the photoresist is removed;
  • Step S202 sequentially deposit a first oxide layer and a silicon nitride layer from the surface of the first silicon layer away from the second oxide layer to obtain an etched surface of the second wafer;
  • step S10 is a schematic diagram of step S10 in the manufacturing method of the transducer provided in the first embodiment of the present invention
  • Figure 5 (12-26) is a schematic diagram of step S20 in the manufacturing method of the transducer provided by the first embodiment of the present invention.
  • FIG. 4(3), FIG. 4(4), and FIG. 4(5) together to perform development processing on the photoresist 1001 to retain the predetermined area size of the silicon nitride layer 104;
  • step S20 fabricating a second wafer.
  • Steps S201 to S206 of step S20 are the same as the above steps S101 to S106, and will not be repeated here.
  • the other steps of step S20 include:
  • the step S207 coating a layer of photoresist 2004 on the etching surface, according to the preset
  • the first gap 221 and the second gap 223 are developed for the photoresist 2004, and then the first silicon layer 211 is etched to the position of the first oxide layer 212 according to the result of the development of the photoresist 2004 ,
  • the first gap 221 and the second gap 223 are obtained; then the photoresist 2004 is removed.
  • Step S310 the metal layer 114 of the first wafer 100 and the metal layer 214 of the second wafer 200 are fixedly connected; the cavity 122 of the first wafer 100 and the cavity 222 of the second wafer 200 are merged Into a unified cavity 12 of the transducer.
  • the SPL is increased by two times, and the SPL is increased by about 6dB.
  • the second wafer can amplify the amplitude of the first wafer.
  • the first wafer and the second wafer are fixedly connected through their respective metal layers, which increases the stability of the structure.
  • the present invention provides a transducer that doubles the SPL through a two-wafer design, and at the same time increases the stability of the structure.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

La présente invention se rapporte au domaine des transducteurs piézoélectriques, et concerne un transducteur. Le transducteur comprend une première tranche (100) et une seconde tranche (200) ; la première tranche (100) et la seconde tranche (200) comprenant chacune un substrat (110, 210), une première couche d'oxyde (105, 205) fixée à un côté du substrat (110, 210), une couche métallique (114, 214) fixée à l'autre côté du substrat (110, 210), et une couche de nitrure de silicium (104, 204), une première électrode (103, 203), une couche piézoélectrique (102, 202), et une seconde électrode (101, 201) qui sont déposées de manière séquentielle sur la première couche d'oxyde (105, 205) ; le substrat (110, 210) comprend une première couche de silicium (111, 211), une seconde couche de silicium (113, 213), et une seconde couche d'oxyde (112, 212) prise en sandwich entre la première couche de silicium (111, 211) et la seconde couche de silicium (113, 213) ; la couche métallique (114) de la première tranche (100) et la couche métallique (214) de la seconde tranche (200) sont reliées de manière fixe ; la première tranche (100) est pourvue d'une cavité (122) et d'espaces (121, 123) ; et la seconde tranche (200) est pourvue d'une cavité (222), d'un premier espace (221), et d'un second espace (223). De plus, la présente invention concerne en outre un procédé de fabrication correspondant pour le transducteur. Par comparaison avec l'état de la technique, en concevant les deux tranches, SPL est augmenté de deux fois, et la stabilité structurelle est améliorée.
PCT/CN2019/130931 2019-12-31 2019-12-31 Transducteur et procédé de fabrication correspondant WO2021134692A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/130931 WO2021134692A1 (fr) 2019-12-31 2019-12-31 Transducteur et procédé de fabrication correspondant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/130931 WO2021134692A1 (fr) 2019-12-31 2019-12-31 Transducteur et procédé de fabrication correspondant

Publications (1)

Publication Number Publication Date
WO2021134692A1 true WO2021134692A1 (fr) 2021-07-08

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ID=76686178

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/130931 WO2021134692A1 (fr) 2019-12-31 2019-12-31 Transducteur et procédé de fabrication correspondant

Country Status (1)

Country Link
WO (1) WO2021134692A1 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1332595A (zh) * 2000-07-10 2002-01-23 株式会社村田制作所 压电电声换能器
JP2004274574A (ja) * 2003-03-11 2004-09-30 Toyo Commun Equip Co Ltd 弾性表面波装置とその製造方法
CN101111099A (zh) * 2006-07-20 2008-01-23 星电株式会社 压电式电声转换器
CN101111100A (zh) * 2006-07-20 2008-01-23 星电株式会社 压电式电声转换器
US20180117631A1 (en) * 2016-10-27 2018-05-03 Cts Corporation Transducer, Transducer Array, and Method of Making the Same
CN109905833A (zh) * 2018-12-31 2019-06-18 瑞声科技(新加坡)有限公司 Mems麦克风制造方法
CN110040681A (zh) * 2019-03-05 2019-07-23 常州元晶电子科技有限公司 一种低成本高一致性mems压电换能器的制作方法
CN110560350A (zh) * 2019-08-16 2019-12-13 武汉大学 基于Helmholtz共振腔的接收超声换能器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1332595A (zh) * 2000-07-10 2002-01-23 株式会社村田制作所 压电电声换能器
JP2004274574A (ja) * 2003-03-11 2004-09-30 Toyo Commun Equip Co Ltd 弾性表面波装置とその製造方法
CN101111099A (zh) * 2006-07-20 2008-01-23 星电株式会社 压电式电声转换器
CN101111100A (zh) * 2006-07-20 2008-01-23 星电株式会社 压电式电声转换器
US20180117631A1 (en) * 2016-10-27 2018-05-03 Cts Corporation Transducer, Transducer Array, and Method of Making the Same
CN109905833A (zh) * 2018-12-31 2019-06-18 瑞声科技(新加坡)有限公司 Mems麦克风制造方法
CN110040681A (zh) * 2019-03-05 2019-07-23 常州元晶电子科技有限公司 一种低成本高一致性mems压电换能器的制作方法
CN110560350A (zh) * 2019-08-16 2019-12-13 武汉大学 基于Helmholtz共振腔的接收超声换能器

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