WO2021103201A1 - 可提高像素分辨率的像素排列显示设备与蒸镀方法 - Google Patents

可提高像素分辨率的像素排列显示设备与蒸镀方法 Download PDF

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WO2021103201A1
WO2021103201A1 PCT/CN2019/125911 CN2019125911W WO2021103201A1 WO 2021103201 A1 WO2021103201 A1 WO 2021103201A1 CN 2019125911 W CN2019125911 W CN 2019125911W WO 2021103201 A1 WO2021103201 A1 WO 2021103201A1
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pixel
pixels
display device
vapor deposition
improving
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何瑞亭
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the invention relates to the technical field of OLED device manufacturing, in particular to a pixel arrangement display device and an evaporation method that can improve pixel resolution.
  • organic EL elements having light-emitting layers of each color of red (R), green (G), and blue (B) are arranged as sub-pixels and formed on a substrate.
  • TFTs TFTs
  • these organic EL elements selectively emit light at a desired brightness to perform color image display.
  • FMM pixel aperture diameters are getting smaller and smaller, which greatly increases the difficulty of FMM manufacturing process and OLED evaporation process control.
  • this arrangement requires that the openings of the fine metal mask (FMM) and the connecting bridges (the ribs that connect adjacent openings) are very small, which makes not only the mask (MASK) difficult to process, but also Moreover, the alignment accuracy of MASK, the shadow of MASK, the deformation of MASK affected by other factors, etc. will seriously affect the evaporation of organic light-emitting materials to form fine colored pixel patterns.
  • FMM fine metal mask
  • the connecting bridges the ribs that connect adjacent openings
  • the present invention discloses a pixel arrangement display device and an evaporation method that can improve the resolution of pixels.
  • the width of the opening and the connecting bridge of the present invention is larger and easier. It is processed and not easily deformed.
  • the increase in the distance between different pixels is beneficial to avoid color mixing and improve product yield.
  • the vapor deposition alignment Margin is larger, the vapor deposition process is easy to perform, and the increase in production capacity caused by the reduction of FMM replacement frequency is solved. Reduce FMM cleaning loss.
  • a vapor deposition method for pixel arrangement that can improve pixel resolution.
  • the vapor deposition method includes the following steps:
  • S1 regards the adjacent pixels with the same appearance and color in the pixel arrangement on the vapor-deposited substrate as independent units
  • S3 uses separate FMM openings to vapor-deposit EL film for each independent unit.
  • the plate material on the substrate with vapor deposition particles that is closest to the evaporation source is removed, and the clean plate material is added to the limit at a position different from the position of the substrate to be removed.
  • At least one of the at least one first FMM opening and the at least one second FMM opening is inclined such that its opening direction faces the other side, so that the amount of vapor deposition material adhering to the restriction unit is reduced, and the vapor deposition is improved. Utilization efficiency of plating materials.
  • a pixel arrangement display device capable of improving pixel resolution the display device being used to implement the above-mentioned vapor deposition method capable of improving pixel resolution
  • the display device includes an EL display device
  • the EL display device is from A bottom-emission type organic EL display device that takes out light on the vapor-deposited substrate side controls the light emission of pixels of each color including R pixels, G pixels, and B pixels to perform full-color image display, and on the vapor-deposited substrate
  • the shape of the FMM opening is a quadrilateral or other polygons other than the quadrilateral.
  • the FMM openings can be distributed on the same straight line.
  • the number of pixels in the independent unit is ⁇ 2.
  • the distance between pixels in the independent unit can be increased or decreased.
  • the R pixel is a red quadrilateral
  • the G pixel is a green quadrilateral
  • the B pixel is a blue quadrilateral.
  • the mask of the R, G, and B pixels of the present invention is easier to process and not easily deformed because of the larger width of the opening and the connecting bridge than the mask of the existing FMM technology.
  • the increase of the distance is beneficial to avoid color mixing, and is beneficial to improve the product yield, the evaporation registration Margin is larger, the FMM replacement frequency is reduced, which leads to an increase in production capacity and a reduction in FMM cleaning loss.
  • the FMM connecting bridge is wider and not easily deformed, which can produce OLED display screens with higher pixel density.
  • the pixel arrangement design and vapor deposition method of the OLED device proposed in the present invention can not only improve the resolution of the device, but also improve the operability of the FMM manufacturing and vapor deposition process, and increase the productivity and yield.
  • Figure 1 is a schematic diagram of the evaporation principle of FMM pixel single-layer film evaporation in the existing mass production technology
  • FIG. 2 is a schematic diagram of two identical sub-pixels of the same single color according to the present invention.
  • Fig. 3 is a schematic diagram of RGB pixels arranged on the vapor-deposited substrate of the present invention.
  • FIG. 4 is a schematic diagram of the number of pixels in three monochromatic independent units being the same when RGB pixels are arranged on the vapor-deposited substrate according to the present invention, and the FMM openings are distributed on the same straight line;
  • FIG. 5 is a schematic diagram of the FMM openings distributed on the same straight line when RGB pixels are arranged on the vapor-deposited substrate according to the present invention.
  • Fig. 6 is a schematic diagram of the opening of the FMM of the present invention.
  • FIG. 7 is a schematic block diagram of a pixel arrangement evaporation method that can improve pixel resolution according to an embodiment of the present invention
  • This embodiment discloses a pixel arrangement evaporation method that can improve pixel resolution as shown in FIG. 7, which includes the following steps:
  • S1 regards the adjacent pixels with the same appearance and color in the pixel arrangement on the vapor-deposited substrate as independent units
  • S3 uses separate FMM openings to vapor-deposit EL film for each independent unit.
  • the plate material on the substrate with vapor deposition particles that is closest to the evaporation source is removed, and the clean plate material is added to the restriction unit at a position different from the position of the removed substrate.
  • At least one of the at least one first FMM opening and the at least one second FMM opening is inclined such that the opening direction thereof faces the other side, so that the amount of vapor deposition material attached to the restriction unit is reduced, and the utilization of the vapor deposition material is improved effectiveness.
  • This embodiment discloses a pixel arrangement design and an evaporation method of a high PPIOLED device, as shown in FIG. 2.
  • the purpose is to produce OLED screens with the same resolution, the R, G, and B pixel masks of the present invention are easier to process and not easily deformed because of the larger openings and connecting bridges than the existing FMM technology masks.
  • the increase of the distance between them is beneficial to avoid color mixing and improve the product yield.
  • the vapor deposition alignment Margin is larger, the vapor deposition process is easy to proceed, the production capacity is increased due to the reduction of FMM replacement frequency, and the FMM cleaning loss is reduced.
  • the mask opening width is the same as the existing FMM technology
  • a plurality of types of through holes can always be arranged on the front of the vapor deposition source opening so that the opening width changes as the vapor deposition source opening approaches the vapor deposition mask.
  • the restricted openings connected in a large way, the FMM connecting bridge is wider, and it is not easy to deform, and it can also produce OLED display screens with higher pixel density.
  • the organic EL display device in this embodiment is a bottom emission type organic EL display device that takes out light from the TFT substrate side.
  • the light emission of the pixel) is controlled to perform full-color image display.
  • the coating includes the main part of the coating and the fuzzy part.
  • the main part of the coating is a mixture of vapor-deposited particles.
  • the fuzzy part can prevent color mixing and improve the utilization efficiency of the material of the vapor-deposited particles. It can also reduce the frequency of replacement of the limiting plate unit. .
  • TFTs, wiring, and the like are formed on an insulating substrate by a known method.
  • a transparent glass substrate or a plastic substrate can be used.
  • a rectangular glass plate with a thickness of about 1 mm and a vertical and horizontal dimension of 500 ⁇ 400 mm can be used.
  • a photosensitive resin is coated on the insulating substrate so as to cover the TFT and the wiring, and patterning is performed using photolithography technology, thereby forming an interlayer film.
  • an insulating material such as acrylic resin or polyimide resin
  • polyimide resins are generally opaque and colored. Therefore, when manufacturing a bottom emission type organic EL display device, it is preferable to use a transparent resin such as an acrylic resin as the interlayer film.
  • the thickness of the interlayer film is not particularly limited as long as the step difference on the upper surface of the TFT can be eliminated.
  • an acrylic resin can be used to form an interlayer film having a thickness of about 2 ⁇ m.
  • a contact hole for electrically connecting the electrode and the TFT is formed in the interlayer film.
  • An electrode is formed on the interlayer film. That is, a conductive film (electrode film) is formed on the interlayer film.
  • a photoresist is coated on the conductive film, and after patterning using a photolithography technique, the conductive film is etched using ferric chloride as an etching solution. After that, the photoresist is stripped using a resist stripping solution, and the substrate is further cleaned.
  • the electron transport layer is formed on the entire surface of the display area of the TFT substrate by a vapor deposition method. The electron transport layer can be formed by the same method as the above-mentioned formation process of the hole injection layer and the hole transport layer.
  • materials with high luminous efficiency such as low-molecular fluorescent dyes and metal coordination compounds can be used.
  • examples include: anthracene, naphthalene, indene, phenanthrene, pyrene, tetracene, triphenanthrene, anthracene, perylene, acenamon, fluoranthene, acephenanthrene, pentophene, pentacene, hexabenzophene, butadiene Ene, coumarin, acridine, stilbene and their derivatives; tris(8-hydroxyquinoline) aluminum coordination compound; bis(hydroxybenzoquinoline) beryllium coordination compound; tris(diphenacyl) ) Europium-phenanthroline coordination compound; Xylene formyl vinyl biphenyl, etc.
  • the light-emitting layer may include only the above-mentioned organic light-emitting material, or may include hole transport layer materials, electron transport layer materials, additives (donors, acceptors, etc.), light-emitting dopants, and the like.
  • it may be a structure in which these materials are dispersed in a polymer material (bonding resin) or an inorganic material. From the viewpoints of improving the luminous efficiency and extending the lifetime, a structure in which a luminescent dopant is dispersed in the host material is preferred.
  • two sub-pixels with the same R, G, and B are arranged together as an independent unit.
  • This unit can be vapor-deposited through an FMM opening, but the sub-pixels emit light separately.
  • the R, G, and B pixels are fabricated on the above-mentioned backplane, the distance between the same sub-pixels in the independent units can be reasonably reduced, and the distance between the same sub-pixels and the adjacent different units can be increased accordingly.
  • This embodiment discloses a pixel arrangement display device and an evaporation method that can improve pixel resolution.
  • R pixels, G pixels, and B pixels whose quadrangular shapes can be independently controlled and emit light are arranged in sequence on an evaporation substrate; Pixels of the same color are used as independent units, and each independent unit is vapor-deposited to form an EL film using a separate FMM opening.
  • the material of the EL film layer can be benzyne, styrylamine, triphenylamine, porphyrin, triazole, imidazole, oxadiazole, polyarylalkane, phenylenediamine, arylamine, oxazole, anthracene, fluorenone , Hydrazone, stilbene, triphenylene, azatriphenylene and their derivatives; polysilane compounds; vinyl carbazole compounds, thiophene compounds, aniline compounds and other heterocyclic or chain conjugates The monomer, oligomer or polymer etc.
  • a light-emitting layer containing a light-emitting dopant dispersed in a host is formed.
  • a material with good electron transport efficiency that is, an electron transporting material
  • a material having a property of blocking the movement of holes that is, hole blocking properties
  • the R pixel is a red quadrilateral 1
  • the G pixel is a green quadrilateral 2
  • the B pixel is a blue quadrilateral 3.
  • the FMM opening is shown in FIG. 6, and the FMM opening includes a quadrilateral but is not limited to a quadrilateral.
  • the appearance and size of the pixels of the independent cells are the same, and the appearance and size of the pixels in the cells of different colors may be the same or different.
  • the number of pixels in an independent unit is greater than or equal to 2, including the description in this case but not limited to this. As long as the number of pixels in the same unit of the three monochromatic colors of RGB is the same, all the pixel arrangements and the evaporation method in which the same unit is opened by the same FMM.
  • the RGB unit openings may be on a straight line or not on the same straight line, for example, as shown in FIG. 3, FIG. 4, and FIG. 5.
  • the areas where the R, G, and B pixel arrangement design on the substrate can be used include the use of vapor deposition to form the EL film, but it is not limited to the vapor deposition method.
  • the plate material on the substrate with vapor deposition particles that is closest to the evaporation source is removed, and the clean plate material is added to the restriction unit at a position different from the position of the removed substrate.
  • the vapor deposition material is attached to the restricting unit, only the plate material closest to the vapor deposition source with the largest amount of deposition of the vapor deposition material can be removed. As a result, the maintenance of the restriction unit can be performed easily and in a short time. Increase the accuracy of evaporation.
  • At least one of the at least one first FMM opening and the at least one second FMM opening is inclined such that the opening direction thereof faces the other side; this reduces the amount of vapor deposition material adhering to the restricting plate unit, and therefore can improve Evaporation material utilization efficiency.
  • the frequency of replacement of the limiting plate unit can be reduced, and therefore, the production capacity during mass production can be improved. It is possible to reduce the size and weight of the entire limit plate unit. As a result, the replacement of the restriction plate unit becomes easy.
  • the cooling characteristics of the limiting plate unit are improved, and therefore the flying direction of the vapor deposition particles can be stably managed.
  • the restriction plate unit includes a cooling device for cooling the restriction plate unit.
  • the cooling device is not particularly limited, and, for example, a pipe for passing a refrigerant (for example, water), a cooling element such as a Peltier element, and the like can be arbitrarily selected.
  • the vapor deposition material may adhere to the restriction plate unit. Therefore, it is preferable to replace the restriction plate unit to which the vapor deposition material is adhered to a new restriction plate unit within a predetermined period.
  • the restriction plate unit may adopt a structure capable of being divided into a plurality of parts.
  • the light-emitting layer is separately coated and vapor deposited, and the occurrence of color mixing can be prevented.
  • the pixel pitch can be reduced.
  • the organic EL element since it is not necessary to increase the current density in order to increase the brightness, the organic EL element does not shorten the life span or suffer damage, and it is possible to prevent a decrease in reliability.
  • the pixel arrangement design and vapor deposition method of the OLED device proposed in this embodiment can not only improve the resolution of the device, but also improve the operability of the FMM manufacturing and vapor deposition process, and can also increase the productivity and yield.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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Abstract

一种可提高像素分辨率的像素排列显示设备与蒸镀方法,在蒸镀基板上依次设置四边形状可独立控制、发光的R像素、G像素和B像素；并将紧邻相貌和颜色相同的像素作为独立单元(S1)，使用单独的FMM开孔对每个独立单元进行EL膜层蒸镀成膜(S3)，有助于生产分辨率相同且生产像素密度更高的OLED显示屏。

Description

可提高像素分辨率的像素排列显示设备与蒸镀方法 技术领域
本发明涉及OLED器件制作技术领域，具体涉及一种可提高像素分辨率的像素排列显示设备与蒸镀方法。
背景技术
目前OLED器件制作大多采用金属掩膜板(Fine Metal Mask,FMM)进行RGB像素EL膜层蒸镀，每个FMM开孔对应一个像素，现有量产技术FMM设计一个开孔进行一个像素单层膜蒸镀，如图1所示。
在全彩色的有机EL显示装置中，通常，具备红色(R)、绿色(G)、蓝色(B)的各颜色的发光层的有机EL元件作为子像素排列形成在基板上。通过使用TFT使这些有机EL元件有选择地以期望的亮度发光来进行彩色图像显示。随着市场对高分辨需求的提高，FMM像素开孔直径越来越小，这大大增加了FMM制作工艺以及OLED蒸镀工艺过程控制的难度。当分辨率达到300ppi以上时，这种排列方式要求精细金属掩模板(FMM)的开口及连接桥(连接相邻开孔的肋骨)均非常细小，致使不但掩模板(MASK)加工难度非常大，而且MASK对位精度、MASK阴影、MASK受其他因素影响而变形等将严重影响有机发光材料蒸镀形成精细的彩色化像素图案。
行业内针对该问题，领先企业虽也积极研究以LITI(激光热转印)为代表的新技术以期能够生产高解析度的OLED显示屏，但这些新技术仍有诸多不足之处，目前还不能用于量产或量产时良率低下。比如需增加制程工序和额外的制程工艺而导致生产效率较低；需要增加设备和原材料，甚至需要开发特别的原材料，导致投资和成本增加等。即便如此，这些新技术仍难以生产450ppi以上的超高解析度显示屏。同时FMM像素开孔小也会增加连续蒸镀过程FMM清洗的频率，导致产能降低、蒸镀材料浪费以及FMM因清洗次数增多导致的损耗。
技术问题
针对现有技术的不足，本发明公开了一种可提高像素分辨率的像素排列显示 设备与蒸镀方法，在生产分辨率相同的OLED屏时，本发明开口及连接桥的宽度更大而易于加工且不易变形，不同像素之间距离的增大，有利于避免混色，有利于提高产品良率，蒸镀对位Margin更大，蒸镀工艺易进行，解决FMM更换频率降低导致的产能提高以及降低FMM清洗损耗。
技术解决方案
本发明通过以下技术方案予以实现：
一种可提高像素分辨率的像素排列蒸镀方法，所述蒸镀方法包括以下步骤：
S1将蒸镀基板上像素排列中紧邻相貌和颜色相同的像素作为独立单元；
S2在蒸镀基板上开设单独的FMM开孔；
S3利用单独的FMM开孔对每个独立单元进行EL膜层蒸镀成膜。
更进一步的，当三个单色的独立单元内的像素个数是相同时，所有像素排列方式以及独立单元由同一FMM开孔蒸镀。
更进一步的，所述蒸镀的过程中，将基板中最接近蒸镀源的、附着有蒸镀颗粒的板材除去，在与被除去的基板的位置不同的位置，将洁净的板材追加到限制单元中。
更进一步的，至少一个第一FMM开孔和至少一个第二FMM开孔中的至少一方以其开口方向朝向对方侧的方式倾斜使得附着在所述限制单元的蒸镀材料的量减少，提高蒸镀材料的利用效率。
一种可提高像素分辨率的像素排列显示设备，所述显示设备用于实现上述的可提高像素分辨率的蒸镀方法，其中，所述显示设备包括EL显示装置，所述EL显示装置是从蒸镀基板侧取出光的底部发光型的有机EL显示装置，通过对包括R像素、G像素和B像素的各颜色的像素的发光进行控制来进行全彩色的图像显示，并在蒸镀基板上依次设置四边形状可独立控制、发光的R像素、G像素和B像素；并将紧邻相貌和颜色相同的像素作为独立单元。
优选的，所述FMM开孔形状为四边形或除四边形外的其他多边形。
优选的，所述FMM开孔可分布在同一直线上。
优选的，所述的独立单元内像素个数≥2个。
优选的，所述独立单元内像素间的距离可增加或减少。
优选的，所述R像素为红颜色四边形，所述G像素为绿颜色四边形，所述B像素为蓝颜色四边形。
有益效果
本发明的有益效果为：
1、生产分辨率相同的OLED屏时，本发明方案的R、G、B像素MASK相比现有FMM技术的MASK因为开口及连接桥的宽度更大而易于加工且不易变形，不同像素之间距离的增大，有利于避免混色，有利于提高产品良率、蒸镀对位Margin更大、FMM更换频率降低导致产能提高以及降低FMM清洗损耗。
2、在MASK开口宽度与现有FMM技术相同的情况下，FMM连接桥更宽，不易变形，可生产像素密度更高的OLED显示屏。
3、本发明提出的OLED器件像素排列设计以及蒸镀方式既可提高器件分辨率，可提高FMM制作、蒸镀工艺的可操作性，提高产能、良率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可根据这些附图获得其他的附图。
图1是现有量产技术FMM像素单层膜蒸镀原理示意图；
图2是本发明同一单色的两个相同子像素示意图；
图3是本发明在蒸镀基板设置RGB像素示意图；
图4是本发明在蒸镀基板设置RGB像素时，三个单色的独立单元内的像素个数是相同，FMM开孔分布在同一直线上的示意图；
图5是本发明在蒸镀基板设置RGB像素时，FMM开孔分布在同一直线上的示意图；
图6是本发明FMM开孔示意图；
图7是本发明实施例一种可提高像素分辨率的像素排列蒸镀方法的原理框图；
图中的标号分别代表：
1、红颜色四边形；2、绿颜色四边形；3、蓝颜色四边形。
本发明的实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
本实施例公开如图7所示的一种可提高像素分辨率的像素排列蒸镀方法，包括以下步骤：
S1将蒸镀基板上像素排列中紧邻相貌和颜色相同的像素作为独立单元；
S2在蒸镀基板上开设单独的FMM开孔；
S3利用单独的FMM开孔对每个独立单元进行EL膜层蒸镀成膜。
当三个单色的独立单元内的像素个数是相同时，所有像素排列方式以及独立单元由同一FMM开孔蒸镀。
蒸镀的过程中，将基板中最接近蒸镀源的、附着有蒸镀颗粒的板材除去，在与被除去的基板的位置不同的位置，将洁净的板材追加到限制单元中。至少一个第一FMM开孔和至少一个第二FMM开孔中的至少一方以其开口方向朝向对方侧的方式倾斜使得附着在所述限制单元的蒸镀材料的量减少，提高蒸镀材料的利用效率。
实施例2
本实施例公开一种高PPIOLED器件像素排列设计以及蒸镀方式，如图2所示。其目的在于生产分辨率相同的OLED屏时，本发明方案的R、G、B像素MASK 相比现有FMM技术的MASK因为开口及连接桥的宽度更大而易于加工且不易变形，不同像素之间距离的增大，有利于避免混色，有利于提高产品良率，蒸镀对位Margin更大，蒸镀工艺易进行，FMM更换频率降低导致的产能提高以及降低FMM清洗损耗。
换言之，在MASK开口宽度与现有FMM技术相同的情况下，能够在蒸镀源开口的正面总是配置多个种类的贯通孔以开口宽度随着从蒸镀源开口接近蒸镀掩模而变大的方式连通的限制开口，FMM连接桥更宽，不易变形，还可以生产像素密度更高的OLED显示屏。
本实施例中有机EL显示装置是从TFT基板侧取出光的底部发光型的有机EL显示装置，通过对包括红色(R)、绿色(G)、蓝色(B)的各颜色的像素(子像素)的发光进行控制来进行全彩色的图像显示。覆膜包括覆膜主要部分和模糊部分，覆膜主要部分为蒸镀颗粒混合而成，模糊部分能够防止混色的发生并提高蒸镀颗粒的材料的利用效率，还能够减少限制板单元的更换频率。
对于基板，首先，在绝缘基板上利用公知的方法形成TFT和配线等。作为绝缘基板，例如能够使用透明的玻璃基板或塑料基板等。在一个实施例中，作为绝缘基板，能够使用厚度约1mm、纵横尺寸为500×400mm的矩形形状的玻璃板。接着，以覆盖TFT和配线的方式在绝缘基板上涂敷感光性树脂，利用光刻技术进行图案形成，由此形成层间膜。
作为层间膜的材料，例如能够使用丙烯酸树脂或聚酰亚胺树脂等绝缘性材料。不过，聚酰亚胺树脂一般不透明，是有色的。因此，在制造底部发光型的有机EL显示装置的情况下，作为层间膜优选使用丙烯酸树脂等透明性树脂。就层间膜的厚度而言，只要能够消除TFT的上表面的台阶差即可，没有特别限定。在本实施例中，能够使用丙烯酸树脂形成厚度约2μm的层间膜。
接着，在层间膜形成用于将电极与TFT电连接的接触孔。在层间膜上形成电极。即，在层间膜上形成导电膜(电极膜)。接着，在导电膜上涂敷光致抗蚀剂，利用光刻技术进行图案化后，将氯化铁作为蚀刻液，对导电膜进行蚀刻。之后，使用抗蚀剂剥离液剥离光致抗蚀剂，并进一步进行基板清洗。利用蒸镀法在TFT基板的显示区域的整个面形成电子输送层。电子输送层能够利用与上述的空穴注入 层·空穴输送层的形成工序相同的方法形成。当通过来自配线的信号输入而使TFT导通(ON)时，从电极向有机EL层注入空穴。另一方面，向有机EL层注入电子。空穴与电子在发光层内再结合，在使能量失活时射出规定颜色的光。通过控制各自像素的发光亮度，能够在显示区域19内显示规定的图像。
发光层的材料，可使用低分子荧光色素、金属配位化合物等发光效率高的材料。例如可以举出：蒽、萘、茚、菲、芘、并四苯、苯并菲、蒽、苝、苉、荧蒽、醋菲烯、戊芬、并五苯、六苯并苯、丁二烯、香豆素、吖啶、茋和它们的衍生物；三(8-羟基喹啉)铝配位化合物；双(羟基苯并喹啉)铍配位化合物；三(二苯甲酰甲基)邻二氮杂菲铕配位化合物；二甲苯甲酰基乙烯基联苯等。
发光层可以仅包括上述的有机发光材料，也可以包含空穴输送层材料、电子输送层材料、添加剂(供体、受体等)、发光性的掺杂剂等。另外，也可以为在高分子材料(粘结用树脂)或无机材料中分散有这些材料的结构。从提高发光效率和长寿命化的观点出发，优选在主体材料中分散有发光性的掺杂剂的结构。
本实施例在R、G、B相同的两个子像素排列在一起作为独立单元，此单元可以通过一个FMM开口蒸镀,但子像素单独发光。上述背板制作R、G、B像素时独立单元中的相同子像素之间距离可以合理减小，相应的其与相邻的不同单元之间距离增大。
实施例3
本实施例公开一种可提高像素分辨率的像素排列显示设备与蒸镀方法，在蒸镀基板上依次设置四边形状可独立控制、发光的R像素、G像素和B像素；并将紧邻相貌和颜色相同的像素作为独立单元，使用单独的FMM开孔对每个独立单元进行EL膜层蒸镀成膜。EL膜层的材质可以是苯炔、苯乙烯胺、三苯胺、卟啉、三唑、咪唑、噁二唑、多芳基链烷、苯二胺、芳基胺、噁唑、蒽、芴酮、腙、茋、苯并菲、氮杂苯并菲和它们的衍生物；聚硅烷类化合物；乙烯基咔唑类化合物、噻吩类化合物、苯胺类化合物等杂环式或链状式共轭类的单体、低聚物或聚合物等。
构成有机EL元件的有机EL层的种类和构成有机EL层的各层的材料，可以 考虑各种各样的组合。例如，可以考虑形成在主体中分散含有发光性的掺杂剂的发光层的情况。在这种情况下，作为该主体有时使用电子输送效率良好的材料(即电子输送性材料)。或者，作为该主体有时使用具有阻挡空穴移动的特性(即空穴阻挡性)的材料。
蒸镀基板上R、G、B像素排列设计如图3所示，R像素为红颜色四边形1，所述G像素为绿颜色四边形2，所述B像素为蓝颜色四边形3。
FMM开孔如图6所示，FMM开孔包括四边形但不限于四边形。独立单元的像素形貌、大小相同，不同颜色的单元内的像素相貌、大小可以相同也可以不相同。独立单元内像素个数≥2,包括本案例所描述但不限于此。只要RGB三个单色的同一单元内像素个数是相同的所有像素排列方式以及同一单元由同一FMM开孔的蒸镀方式。RGB单元开孔可以在一条直线上也可以不在同一直线上例如图3、图4、图5所示。
实施例4
本实施例中基板上设计R、G、B像素排列设计可用于的领域包括使用蒸镀方式进行EL膜层成膜但不只限于蒸镀方式。蒸镀的过程中，将基板中最接近蒸镀源的、附着有蒸镀颗粒的板材除去，在与被除去的基板的位置不同的位置，将洁净的板材追加到限制单元中。当在限制单元上附着有蒸镀材料时，能够仅将蒸镀材料的附着量最多的、最接近蒸镀源的板材除去。其结果，能够简单地且在短时间内进行限制单元的维护。增加蒸镀的精准性。因为在与附着有蒸镀材料的板材曾存在的位置不同的位置追加洁净的板材，所以能够使多个板材的各个板材的、到附着蒸镀材料而被取出为止的在限制单元内的使用期间变长。
至少一个第一FMM开孔和上述至少一个第二FMM开孔中的至少一方以其开口方向朝向对方侧的方式倾斜；由此，附着在限制板单元的蒸镀材料的量减少，因此能够提高蒸镀材料的利用效率。此外，能够减少限制板单元的更换频率，因此能够提高批量生产时的生产能力。能够实现限制板单元整体的小型化和轻量化。其结果，限制板单元的更换变得容易。此外，限制板单元的冷却特性提高，因此能够稳定地管理蒸镀颗粒的飞翔方向。
为了防止附着的蒸镀材料再蒸发等，限制板单元包括用于将限制板单元冷却 的冷却装置。作为冷却装置，并无特别限定，例如能够任意地选择用于使制冷剂(例如水)通过的配管、帕尔贴元件等的冷却元件等。限制板单元上会附着蒸镀材料。因此，优选按规定的期间将附着有蒸镀材料的限制板单元更换为新的限制板单元。
为了容易地进行限制板单元的更换工作，限制板单元可以采用能够分割为多个部分的结构。本实施方式进行发光层的分涂蒸镀，能够防止混色的发生。由此，能够缩小像素间距，在这种情况下，能够提供可进行高精细显示的有机EL显示装置。另一方面，也可以不改变像素间距而扩大发光区域，在这种情况下，能够提供可进行高亮度显示的有机EL显示装置。此外，因为不需要为了高亮度化而提高电流密度，所以有机EL元件不会缩短寿命或受到损伤，能够防止可靠性的下降。
本实施例提出的OLED器件像素排列设计以及蒸镀方式既可提高器件分辨率，也可提高FMM制作、蒸镀工艺的可操作性，也可提高产能、良率。
以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。
工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (14)

  1. 一种可提高像素分辨率的像素排列蒸镀方法，其包括以下步骤：
    S1将蒸镀基板上像素排列中紧邻相貌和颜色相同的像素作为独立单元；
    S2在蒸镀基板上开设单独的FMM开孔；
    S3利用单独的FMM开孔对每个独立单元进行EL膜层蒸镀成膜。
  2. 根据权利要求1所述的可提高像素分辨率的像素排列蒸镀方法，其中，当三个单色的独立单元内的像素个数是相同时，所有像素排列方式以及独立单元由同一FMM开孔蒸镀。
  3. 根据权利要求1所述的可提高像素分辨率的像素排列蒸镀方法，其中，所述蒸镀的过程中，将基板中最接近蒸镀源的、附着有蒸镀颗粒的板材除去，在与被除去的基板的位置不同的位置，将洁净的板材追加到限制单元中。
  4. 根据权利要求3所述的可提高像素分辨率的像素排列蒸镀方法，其中，至少一个第一FMM开孔和至少一个第二FMM开孔中的至少一方以其开口方向朝向对方侧的方式倾斜使得附着在所述限制单元的蒸镀材料的量减少，提高蒸镀材料的利用效率。
  5. 根据权利要求1所述的可提高像素分辨率的像素排列蒸镀方法，其中，在步骤S1前更包括：提供绝缘基板；以覆盖TFT和配线的方式在绝缘基板上涂敷感光性树脂，利用光刻技术进行图案形成，由此形成层间膜；在层间膜形成用于将电极与TFT电连接的接触孔；在层间膜上形成导电膜；对导电膜进行图案化。
  6. 根据权利要求5所述的可提高像素分辨率的像素排列蒸镀方法，其中，所述层间膜为丙烯酸树脂或聚酰亚胺树脂。
  7. 根据权利要求5所述的可提高像素分辨率的像素排列蒸镀方法，其中，所述层间膜的厚度为2μm。
  8. 一种可提高像素分辨率的像素排列显示设备，所述显示设备用于实现如权利要求1所述可提高像素分辨率的蒸镀方法，其中，所述显示设备包括EL显示装 置，所述EL显示装置是从蒸镀基板侧取出光的底部发光型的有机EL显示装置，通过对包括R像素、G像素和B像素的各颜色的像素的发光进行控制来进行全彩色的图像显示，并在蒸镀基板上依次设置四边形状可独立控制、发光的R像素、G像素和B像素；并将紧邻相貌和颜色相同的像素作为独立单元。
  9. 根据权利要求8所述的可提高像素分辨率的像素排列显示设备，其中，所述FMM开孔形状为四边形或除四边形外的其他多边形。
  10. 根据权利要求9所述的可提高像素分辨率的像素排列显示设备，其中，所述FMM开孔可分布在同一直线上。
  11. 根据权利要求8所述的可提高像素分辨率的像素排列显示设备，其中，所述的独立单元内像素个数≥2个。
  12. 根据权利要求11所述的可提高像素分辨率的像素排列显示设备，其中，所述独立单元内像素间的距离可增加或减少。
  13. 根据权利要求8所述的可提高像素分辨率的像素排列显示设备，其中，所述R像素为红颜色四边形，所述G像素为绿颜色四边形，所述B像素为蓝颜色四边形。
  14. 根据权利要求8所述的可提高像素分辨率的像素排列显示设备，其中，所述EL膜层的材质为苯炔、苯乙烯胺、三苯胺、卟啉、三唑、咪唑、噁二唑、多芳基链烷、苯二胺、芳基胺、噁唑、蒽、芴酮、腙、茋、苯并菲、氮杂苯并菲和它们的衍生物、聚硅烷类化合物、乙烯基咔唑类化合物、噻吩类化合物、苯胺类化合物等杂环式或链状式共轭类的单体、低聚物或聚合物。
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