WO2021102877A1 - 一种巨量转移的载板、巨量转移装置及其方法 - Google Patents

一种巨量转移的载板、巨量转移装置及其方法 Download PDF

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Publication number
WO2021102877A1
WO2021102877A1 PCT/CN2019/121832 CN2019121832W WO2021102877A1 WO 2021102877 A1 WO2021102877 A1 WO 2021102877A1 CN 2019121832 W CN2019121832 W CN 2019121832W WO 2021102877 A1 WO2021102877 A1 WO 2021102877A1
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Prior art keywords
mass transfer
board
micro
adhesive layer
transfer
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PCT/CN2019/121832
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English (en)
French (fr)
Inventor
钟光韦
伍凯义
杨然翔
江仁杰
沈佳辉
Original Assignee
重庆康佳光电技术研究院有限公司
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Priority to CN201980002910.4A priority Critical patent/CN111052342B/zh
Priority to PCT/CN2019/121832 priority patent/WO2021102877A1/zh
Publication of WO2021102877A1 publication Critical patent/WO2021102877A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Definitions

  • the invention relates to the technical field of mass transfer, in particular to a carrier plate for mass transfer, a mass transfer device and a method thereof.
  • Micro-device technology refers to an array of tiny-sized elements integrated with high density on a drive circuit board.
  • micro-pitch light-emitting diode (Micro-LED) technology has gradually become a research hotspot.
  • Micro-LED technology namely LED miniaturization and matrix technology, has good stability, longevity, and operating temperature advantages, while also inheriting LED has the advantages of low power consumption, color saturation, fast response speed, and strong contrast.
  • Micro-LED has higher brightness and lower power consumption.
  • the pitch of the micro-devices is usually adjusted as required. Due to the large number and small size of the micro-devices, there is a problem that it is difficult to adjust the pitch of the micro-devices.
  • the technical problem to be solved by the present invention is to provide a carrier board for mass transfer, a mass transfer device and a method thereof in view of the above-mentioned defects of the prior art, aiming to solve the problem of difficulty in adjusting the pitch of micro devices in the prior art .
  • a carrier board for mass transfer which includes: a temperature control device, a telescopic board located on the temperature control device, and a first adhesive layer provided on the telescopic board; the temperature control device is used to control the The temperature of the stretchable plate, the stretchable plate is used to expand and contract according to temperature changes, so as to adjust the spacing of the micro devices adhered on the first adhesive layer.
  • the telescopic board is made of positive thermal expansion material and/or negative thermal expansion material.
  • the telescopic board expands linearly.
  • the telescopic board expands and contracts along the length direction and/or the width direction.
  • the temperature control device includes: a flat plate in contact with the telescopic plate, and a heating device for heating the flat plate.
  • the temperature control device further includes: a cooling device for cooling the plate.
  • the size of the flat plate is larger than the size of the telescopic board in a stretched state.
  • a mass transfer device which comprises: a carrier board for mass transfer as described in any one of the above, and a transfer board used in conjunction with the carrier; the transfer board is used to transfer Micro devices.
  • the mass transfer device wherein the transfer plate comprises: a plate body, a second adhesive layer provided on the plate body; the first adhesive layer has a smaller viscosity to the micro device than the second adhesive layer The adhesion of the adhesive layer to the micro device.
  • the mass transfer device wherein the transfer plate includes a plurality of bumps, and a second adhesive layer provided on each bump; the first adhesive layer has a smaller adhesiveness to the micro device than the first adhesive layer. The adhesion of the second adhesive layer to the micro device.
  • the plurality of bumps are arranged in an array, and the spacing between the micro devices is an integer multiple of the spacing between the plurality of bumps.
  • the size of the micro device is smaller than or equal to the size of the bump.
  • a method for mass transfer wherein the above-mentioned mass transfer device is adopted, and includes the following steps:
  • the micro device is transferred through the transfer plate.
  • the transfer plate includes: a plate body, a second adhesive layer provided on the plate body; or, the transfer plate includes a plurality of bumps, which are provided on each of the The second adhesive layer on the bump.
  • the mass transfer method wherein the adhesion of the first adhesive layer to the micro device is less than the adhesion of the second adhesive layer to the micro device;
  • the transferring the micro device through the transfer board includes:
  • the transfer plate is raised to separate the micro device from the first adhesive layer, and transfer is performed.
  • the predetermined distance is an integer multiple of the distance between two adjacent bumps.
  • the micro devices are glued to the telescopic board through the first adhesive layer.
  • the temperature of the telescopic board can be adjusted by the temperature control device, and the telescopic board is affected by temperature changes. The influence will expand or contract, thereby driving the increase or decrease of the distance between the micro devices adhered to the telescopic plate, so that the distance between the micro devices is adjusted during the further massive transfer process.
  • Fig. 1 is a schematic diagram of the structure of the carrier plate for mass transfer in the present invention.
  • Fig. 2 is a schematic diagram of the first structure of the mass transfer device of the present invention.
  • Fig. 3 is a schematic diagram of the second structure of the mass transfer device of the present invention.
  • Fig. 4 is a schematic diagram of the third structure of the mass transfer device of the present invention.
  • Fig. 5 is a fourth structural diagram of the mass transfer device of the present invention.
  • Fig. 6 is a schematic diagram of the fifth structure of the mass transfer device of the present invention.
  • the present invention provides some embodiments of a carrier board for mass transfer.
  • a carrier board 10 for mass transfer of the present invention includes: a temperature control device 11, a telescopic board 12 located on the temperature control device 11, and a first Adhesive layer 13; the temperature control device 11 is used to control the temperature of the telescopic plate 12, and the telescopic plate 12 is used to expand and contract according to temperature changes to adjust the micro-adhesion on the first adhesive layer 13 The pitch of the device 20.
  • the micro device 20 in the present invention may be Micro-LED, LED, or OLED.
  • the carrier board 10 is covered on the growth substrate, so that a plurality of micro devices 20 arranged in an array on the growth substrate are bonded and transferred through the first adhesive layer 13 on the carrier board 10 To the carrier board 10.
  • the temperature of the telescopic board 12 can be adjusted by the temperature control device 11.
  • the telescoping board 12 will expand or contract under the influence of temperature changes, thereby driving the distance between the micro devices 20 adhered to the telescoping board 12 As a result, the distance between the micro devices 20 is adjusted in the process of further mass transfer.
  • the first viscous layer 13 is coated on the telescopic board 12. When the telescopic board 12 is stretched, the first viscous layer 13 will also expand and contract with the stretchable board 12, thereby driving the micro device 20 to move. It can be seen that the use of the temperature control device 11 to adjust the spacing of the micro devices 20 can achieve the purpose of quickly adjusting the spacing of the micro devices 20.
  • the telescopic plate 12 is made of positive thermal expansion material and/or negative thermal expansion material.
  • the telescoping plate 12 is made of positive thermal expansion material and/or negative thermal expansion material as required, where the average linear expansion coefficient or volume expansion coefficient of the positive thermal expansion material within a certain temperature range is a type of compound with a positive value, that is, Say, positive thermal expansion material expands when heated, and shrinks when subjected to cold; negative thermal expansion material refers to a type of compound whose average linear expansion coefficient or body expansion coefficient is negative within a certain temperature range, that is, negative thermal expansion The material shrinks when heated and expands when cooled.
  • the positive thermal expansion material and the negative thermal expansion material can be combined to prepare the telescopic panel 12 to obtain the telescopic panel 12 with a controllable thermal expansion coefficient.
  • a telescopic plate 12 made of corresponding materials it is necessary to use a telescopic plate 12 made of corresponding materials.
  • a telescopic plate 12 made of a positive thermal expansion material is used, and the telescopic plate 12 is stretched by heat treatment.
  • the pitch of the micro devices 20 is increased.
  • a retractable plate 12 made of a negative thermal expansion material can also be used, and the retractable plate 12 is stretched through a cooling process to increase the spacing of the micro devices 20.
  • the telescopic board 12 made of positive thermal expansion material is used, and the telescoping board 12 is contracted through a cooling process to reduce the spacing of the micro devices 20.
  • a retractable plate 12 made of a negative thermal expansion material can also be used, and the retractable plate 12 is shrunk through heating treatment to reduce the spacing of the micro devices 20.
  • the telescopic plate 12 expands linearly.
  • the telescopic plate 12 made of positive thermal expansion material and/or negative thermal expansion material has the property of linear expansion, that is, the deformation amount of its expansion or contraction has a linear relationship with the amount of temperature change, so that the temperature can be changed The amount of deformation of expansion or contraction is obtained, and then the amount of change in the pitch of the micro device 20 is obtained.
  • the telescopic plate 12 stretches and contracts along the length direction and/or the width direction. Specifically, since the positive thermal expansion material and the negative thermal expansion material can be divided into linear expansion or volume expansion, when the linear expansion is exhibited, the telescopic plate 12 expands and contracts in the length direction or the width direction; when the physical expansion is manifested, the telescopic plate 12 extends along the Both the length direction and the width direction expand and contract.
  • the temperature control device 11 includes: a flat plate in contact with the telescopic plate 12, and a heating device for heating the flat plate.
  • the flat plate and the telescopic plate 12 adopt surface-to-surface contact.
  • a flat plate with higher flatness is used to make the flat plate and the telescopic plate 12 fit together, and at the same time, it is convenient for the telescopic plate 12 to expand and contract. If the flatness is higher, the expansion and contraction of the telescopic plate 12 will not encounter resistance. It is usually necessary to increase the spacing of the micro devices 20, so a heating device is used to heat the plate.
  • the temperature control device 11 further includes: a cooling device for cooling the plate.
  • a cooling device for cooling the plate.
  • a cooling device is installed on the basis of the heating device, so as to expand the adjustable temperature range and achieve the purpose of rapid cooling, for example, after transferring a batch
  • the micro-device 20 can then be quickly cooled by the cooling device, so that the next batch of micro-devices 20 can be transferred.
  • the size of the flat plate is larger than the size of the telescopic plate 12 in the stretched state.
  • the size of the telescopic plate 12 at the maximum extension is smaller than the size of the flat plate, so as to prevent the flat plate from being stretched out of the flat plate, causing part of the retractable plate 12 to fail to contact the flat plate, thereby affecting the adjustment of the spacing of the micro devices 20 .
  • the mass transfer device includes: a carrier board 10 for mass transfer as described in any one of the above embodiments, and a transfer board 30 used in conjunction with the carrier board 10;
  • the transfer board 30 is used to transfer the micro devices 20 on the carrier board 10.
  • the transfer board 30 can be used to transfer the micro devices 20 on the carrier board 10, and the transfer board 30 can use the methods of sticking, sucking or grabbing to take the micro devices 20 on the carrier board 10 and transfer them to other devices. For example, transfer to a circuit board. Therefore, after the spacing of the micro devices 20 is adjusted by the carrier board 10, and then transferred by the transfer board 30, the micro devices 20 with a predetermined spacing can be transferred.
  • the transfer plate 30 includes: a plate body 31, a second adhesive layer 32 provided on the plate body 31; the first adhesive layer 13
  • the adhesion to the micro device 20 is less than the adhesion of the second adhesive layer 32 to the micro device 20.
  • the micro device 20 on the carrier board 10 is transferred by sticking. Since the first adhesive layer 13 is provided on the retractable plate 12 to fix the micro device 20, the second adhesive layer 32 is opposite to the micro device 20. The viscosity of 20 is greater than the viscosity of the first adhesive layer 13 to the micro device 20. When the second adhesive layer 32 adheres to the micro device 20, lifting the plate body 31 can separate the first adhesive layer 13 from the micro device 20, thereby transferring to On other devices.
  • the transfer plate 30 includes a plurality of bumps 33, the second adhesive layer 32 arranged on each of the bumps 33, and the first adhesive layer faces the The adhesion of the micro device is less than the adhesion of the second adhesive layer to the micro device.
  • the bump 33 is arranged opposite to the micro device 20.
  • the bump 33 may be provided on the board 31.
  • the second adhesive layer 32 can be a whole layer, or it can be divided into several small layers.
  • each second adhesive layer 32 is connected to the board 31 through a bump 33, then only the bump 33 (or convex When the second adhesive layer 32 on the block 33 is aligned with the micro device 20, the micro device 20 will be adhered to.
  • the bumps 33 are arranged in an array.
  • the micro devices 20 are usually arranged in an array, and the bumps 33 are also arranged in an array.
  • the size of the micro device 20 is smaller than or equal to the size of the bump 33, and also In other words, even if the distance between the micro devices 20 is changed, if there is a slight misalignment, the adhesion of the micro devices 20 will not be affected.
  • the spacing between the micro devices 20 is an integer multiple of the spacing between the plurality of bumps 33.
  • the integer here is a positive integer.
  • the present invention also provides a preferred embodiment of a mass transfer method:
  • Step S100 Adhesively transfer a plurality of micro devices 20 through the first adhesive layer 13 on the carrier board 10.
  • the micro device 20 is adhered to the first adhesive layer 13 of the carrier board 10 to prepare for the adjustment of the spacing of the micro device 20.
  • the carrier board 10 can be at room temperature, or it can be preheated to a preset temperature by the temperature control device 11, so that the spacing of the micro devices 20 can be adjusted by lowering the temperature after the micro devices 20 are stuck.
  • step S200 the temperature of the telescopic board 12 is controlled by the temperature control device 11, so that the telescopic board 12 is stretched and the distance between the micro devices 20 is adjusted to a preset distance.
  • the transfer plate 30 includes: a plate body 31, a second adhesive layer 32 arranged on the plate body 31; or, the transfer plate 30 includes a plurality of bumps 33, which are arranged on each of the bumps.
  • the second adhesive layer 32 on the block 33.
  • the adhesion of the first adhesive layer 13 to the micro device 20 is less than the adhesion of the second adhesive layer 32 to the micro device 20.
  • the preset distance is an integer multiple of the distance d between two adjacent bumps 33.
  • the temperature control device 11 adjusts the temperature
  • the second adhesive layers 32 corresponding to two adjacent micro devices 20 are alternated with a second adhesive layer 32 in between.
  • the preset spacing is 2d.
  • the second adhesive layers 32 corresponding to two adjacent micro devices 20 are separated by two second adhesive layers 32, and the preset distance is 3d at this time.
  • step S300 the micro device 20 is transferred through the transfer board 30.
  • step S300 includes:
  • Step S310 pressing the transfer board 30 on the micro device 20, and connecting the micro device 20 and the board body 31 through the second adhesive layer 32.
  • Step S320 Lift the transfer plate 30 to separate the micro device 20 from the first adhesive layer 13, and perform transfer.
  • the present invention provides a mass transfer carrier board, a mass transfer device and a method thereof.
  • the mass transfer carrier board includes: a temperature control device, a telescopic device located on the temperature control device Plate and a first viscous layer provided on the telescopic plate; the temperature control device is used to control the temperature of the telescopic plate, and the telescopic plate is used to expand and contract according to temperature changes to adjust the first viscous layer The distance between the attached micro devices.
  • the micro devices are glued to the telescopic board through the first adhesive layer.
  • the temperature of the telescopic board can be adjusted through the temperature control device.
  • the expansion or contraction drives the increase or decrease of the distance between the micro devices adhered to the telescopic board, so that the distance between the micro devices is adjusted during the further massive transfer process.

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Abstract

一种巨量转移的载板、巨量转移装置及其方法，所述巨量转移的载板（10）包括：温控装置（11）、位于所述温控装置（11）上的伸缩板（12）以及设置在所述伸缩板（12）上的第一粘性层（13）；所述温控装置（11）用于控制所述伸缩板（12）的温度，所述伸缩板（12）用于根据温度变化进行伸缩，以调整所述第一粘性层（13）上粘附的微器件（20）的间距。在巨量转移过程中，将微器件（20）通过第一粘性层（13）粘在伸缩板（12）上，在需要调整微器件（20）的间距，则可以通过温控装置（11）调整伸缩板（12）的温度，伸缩板（12）受到温度变化的影响会进行伸张或收缩，从而带动与伸缩板（12）粘连的微器件（20）的间距的增加或减小，从而在进一步的巨量转移过程中，微器件（20）的间距就得到了调整。

Description

一种巨量转移的载板、巨量转移装置及其方法 技术领域
本发明涉及巨量转移技术领域，尤其涉及的是一种巨量转移的载板、巨量转移装置及其方法。
背景技术
微器件技术是指在驱动电路板上以高密度集成的微小尺寸的元件阵列。目前，微间距发光二极管(Micro-LED)技术逐渐成为研究热门，Micro-LED技术，即LED微缩化和矩阵化技术，具有良好的稳定性，寿命，以及运行温度上的优势，同时也承继了LED低功耗、色彩饱和度、反应速度快、对比度强等优点，Micro-LED的亮度更高，且功率消耗量更低。
现有技术中，微器件的间距通常根据需要进行调整，由于微器件的数量多，尺寸小，存在微器件的间距调整难的问题。
因此，现有技术还有待于改进和发展。
发明内容
本发明要解决的技术问题在于，针对现有技术的上述缺陷，提供一种巨量转移的载板、巨量转移装置及其方法，旨在解决现有技术中微器件的间距调整难的问题。
本发明解决技术问题所采用的技术方案如下：
一种巨量转移的载板，其中，包括：温控装置、位于所述温控装置上的伸缩板以及设置在所述伸缩板上的第一粘性层；所述温控装置用于控制所述伸缩板的温度，所述伸缩板用于根据温度变化进行伸缩，以调整所述第一粘性层上粘附的微器件的间距。
所述的巨量转移的载板，其中，所述伸缩板采用正热膨胀材料和/或负热膨胀材料制成。
所述的巨量转移的载板，其中，所述伸缩板呈线性膨胀。
所述的巨量转移的载板，其中，所述伸缩板沿长度方向和/或宽度方向伸缩。
所述的巨量转移的载板，其中，所述温控装置包括：与所述伸缩板接触的平板、用于对所述平板加热的加热装置。
所述的巨量转移的载板，其中，所述温控装置还包括：用于对所述平板降温的降温装置。
所述的巨量转移的载板，其中，所述平板的尺寸大于所述伸缩板在伸张状态下的尺寸。
一种巨量转移装置，其中，包括：如上述任意一项所述的巨量转移的载板、与所述载板配合使用的转移板；所述转移板用于转移所述载板上的微器件。
所述的巨量转移装置，其中，所述转移板包括：板体、设置在所述板体上的第二粘性层；所述第一粘性层对所述微器件的粘性小于所述第二粘性层对所述微器件的粘性。
所述的巨量转移装置，其中，所述转移板包括多个凸块、设置在每个所述凸块上的第二粘性层；所述第一粘性层对所述微器件的粘性小于所述第二粘性层对所述微器件的粘性。
所述的巨量转移装置，其中，所述多个凸块呈阵列排布，且所述微器件之间的间距是所述多个凸块之间间距的整数倍。
所述的巨量转移装置，其中，所述微器件的尺寸小于或等于所述凸块的尺寸。
一种巨量转移方法，其中，采用如上述所述巨量转移装置，并包括以下步骤：
通过所述载板上的所述第一粘性层粘附转移多个微器件；
通过所述温控装置控制所述伸缩板的温度，以使所述伸缩板伸缩并调整所述微器件的间距至预设间距；
通过所述转移板对所述微器件进行转移。
所述的巨量转移方法，其中，所述转移板包括：板体、设置在所述板体上的第二粘性层；或者，所述转移板包括多个凸块、设置在每个所述凸块上的第二粘性层。
所述的巨量转移方法，其中，所述第一粘性层对所述微器件的粘性小于所述第二粘性层对所述微器件的粘性；
所述通过所述转移板对所述微器件进行转移，包括：
将所述转移板压合在所述微器件上，并通过第二粘性层将所述微器件与板体连接；
将所述转移板升起使所述微器件与所述第一粘性层分离，并进行转移。
所述的巨量转移方法，其中，所述预设间距为相邻两个凸块之间的间距的整数倍。
有益效果：在巨量转移过程中，将微器件通过第一粘性层粘在伸缩板上，在需要调整微器件的间距，则可以通过温控装置调整伸缩板的温度，伸缩板受到温度变化的影响会进行伸张或收缩，从而带动与伸缩板粘连的微器件的间距的增加或减小，从而在进一步的巨量转移过程中，微器件的间距就得到了调整。
附图说明
图1是本发明中巨量转移的载板的结构示意图。
图2是本发明中巨量转移装置的第一结构示意图。
图3是本发明中巨量转移装置的第二结构示意图。
图4是本发明中巨量转移装置的第三结构示意图。
图5是本发明中巨量转移装置的第四结构示意图。
图6是本发明中巨量转移装置的第五结构示意图。
具体实施方式
为使本发明的目的、技术方案及优点更加清楚、明确，以下参照附图并举实施例对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请同时参阅图1-图6，本发明提供了一种巨量转移的载板的一些实施例。
如图1所示，本发明的一种巨量转移的载板10，包括：温控装置11、位于所述温控装置11上的伸缩板12以及设置在所述伸缩板12上的第一粘性层13；所述温控装置11用于控制所述伸缩板12的温度，所述伸缩板12用于根据温度变化进行伸缩，以调整所述第一粘性层13上粘附的所述微器件20的间距。本发明中的微器件20可以是 Micro-LED、LED、OLED。
值得说明的是，在巨量转移过程中，将载板10盖合于生长基板，以将生长基板上阵列排布的多个微器件20通过载板10上的第一粘性层13粘合转移至载板10上。需要调整微器件20的间距时，则可以通过温控装置11调整伸缩板12的温度，伸缩板12受到温度变化的影响会进行伸张或收缩，从而带动与伸缩板12粘连的微器件20的间距的增加或减小，从而在进一步的巨量转移过程中，微器件20的间距就得到了调整。
该第一粘性层13涂覆于伸缩板12上，在伸缩板12伸缩时，第一粘性层13也会跟随伸缩板12进行伸缩，从而带动微器件20移动。可见，采用温控装置11调整微器件20的间距，可实现快速调整微器件20的间距的目的。
在本发明的一个较佳实施例中，所述伸缩板12采用正热膨胀材料和/或负热膨胀材料制成。
具体地，伸缩板12根据需要采用正热膨胀材料和/或负热膨胀材料制成，这里正热膨胀材料在一定的温度范围内的平均线膨胀系数或体膨胀系数为正值的一类化合物，也就是说，正热膨胀材料受热膨胀，受冷收缩；负热膨胀材料是指负热膨胀是指在一定的温度范围内的平均线膨胀系数或体膨胀系数为负值的一类化合物，也就是说，负热膨胀材料受热收缩、受冷膨胀。
当然正热膨胀材料和负热膨胀材料可进行复合来制备伸缩板12从而得到可控热膨胀系数的伸缩板12。
根据微器件20的间距调整需要采用对应材料制成的伸缩板12，例如，当需要增加微器件20的间距，则采用正热膨胀材料制成的伸缩板12，通过加热处理，使伸缩板12伸张而增加微器件20的间距。当然也可以采用负热膨胀材料制成的伸缩板12，通过降温处理而使伸缩板12伸张而增加微器件20的间距。再如，当需要减小微器件20的间距时，则采用正热膨胀材料制成的伸缩板12，通过降温处理，使伸缩板12收缩而减小微器件20的间距。当然也可以采用负热膨胀材料制成的伸缩板12，通过加热处理而使伸缩板12收缩而减小微器件20的间距。
在本发明的一个较佳实施例中，所述伸缩板12呈线性膨胀。具体地，采用正热膨 胀材料和/或负热膨胀材料制备的伸缩板12具有线性膨胀的性质，也就是说，其膨胀或收缩的形变量与温度的改变量呈线性关系，从而可通过温度的改变量得到膨胀或收缩的形变量，进而得到微器件20的间距变化量。
在本发明的一个较佳实施例中，所述伸缩板12沿长度方向和/或宽度方向伸缩。具体地，由于正热膨胀材料、负热膨胀材料可以分为线膨胀或体膨胀，当表现线膨胀时，则伸缩板12沿长度方向或宽度方向伸缩；当表现为体膨胀时，则伸缩板12沿长度方向和宽度方向均伸缩。
在本发明的一个较佳实施例中，所述温控装置11包括：与所述伸缩板12接触的平板、用于对所述平板加热的加热装置。
具体地，平板和伸缩板12采用面面接触，为了使伸缩板12充分加热或降温，采用平整度较高的平板，使得平板和伸缩板12相贴合，同时也便于伸缩板12伸缩，平板的平整度较高则伸缩板12的伸缩不会遇到阻力。通常需要增加微器件20的间距，因此采用加热装置对平板加热。
在本发明的一个较佳实施例中，所述温控装置11还包括：用于对所述平板降温的降温装置。具体地，为了多种情况下的需求及快速调整温度，在设置加热装置的基础上设置降温装置，从而扩大可调控的温度的范围，也可以达到快速降温的目的，例如，在转移完一批微器件20之后可以通过降温装置快速降温，从而进行下一批微器件20的转移。
在本发明的一个较佳实施例中，如图1-图3所示，所述平板的尺寸大于所述伸缩板12在伸张状态下的尺寸。也就是说，伸缩板12在最大伸张量时，其尺寸也小于平板的尺寸，从而避免平板因伸张而超出平板外而导致部分伸缩板12无法与平板接触，进而影响微器件20的间距的调整。
本发明还提供了一种巨量转移装置的较佳实施例：
如图2所示，本发明实施例所述的巨量转移装置，包括：如上述任意一实施例所述的巨量转移的载板10、与所述载板10配合使用的转移板30；所述转移板30用于转移所述载板10上的微器件20。
具体地，转移板30可以用来转移载板10上的微器件20，转移板30可以采用粘取、吸取或抓取等方式在载板10上取到微器件20并转移到其它装置上，例如转移到线路板上。因此，在通过载板10调整好微器件20的间距后，再由转移板30转移，则可将预定间距的微器件20进行转移。
在本发明的一个较佳实施例中，如图2所示，所述转移板30包括：板体31、设置在所述板体31上的第二粘性层32；所述第一粘性层13对所述微器件20的粘性小于所述第二粘性层32对所述微器件20的粘性。
具体地，本实施例中采用粘取的方式转移载板10上的微器件20，由于伸缩板12上设置有第一粘性层13以固定微器件20，因此，第二粘性层32对微器件20的粘性要大于第一粘性层13对微器件20的粘性，在第二粘性层32粘取微器件20时，提起板体31可以使第一粘性层13与微器件20脱离，从而转移到其它装置上。
在本发明的一个较佳实施例中，所述转移板30包括多个凸块33、设置在每个所述凸块33上的所述第二粘性层32，所述第一粘性层对所述微器件的粘性小于所述第二粘性层对所述微器件的粘性。所述凸块33与所述微器件20相对设置。当然，如图2-图4所示，在另一实施例中，凸块33可以设置在板体31上。
具体地，第二粘性层32可以是一整层，也可以分成若干个小层，例如，每个第二粘性层32通过凸块33与板体31连接，那么只有凸块33(或者说凸块33上的第二粘性层32)与微器件20对准时，才会粘取到微器件20。
在本发明的一个较佳实施例中，所述凸块33呈阵列排布。具体地，微器件20通常采用阵列排布，则凸块33也是阵列排布。
在本发明的一个较佳实施例中，如图2-图4所示，为了确保微器件20粘取的可靠性，所述微器件20的尺寸小于或等于所述凸块33的尺寸，也就是说，即使微器件20间距变化后，如果略有对不准，也不会影响微器件20的粘取。
在本发明的一个较佳实施例中，所述微器件20之间的间距是所述多个凸块33之间间距的整数倍。这里的整数为正整数。
基于上述任意实施例所述的巨量转移装置，本发明还提供了一种巨量转移方法的较 佳实施例：
本发明实施例所述的巨量转移方法，包括以下步骤：
步骤S100、通过所述载板10上的第一粘性层13粘附转移多个微器件20。
具体地，在微器件20制备好后，通过载板10的第一粘性层13粘住微器件20，为微器件20的间距的调整做准备。在初始状态下，载板10可以是常温，也可以通过温控装置11进行预热到预设温度，从而在粘住微器件20后通过降温则可以调整微器件20的间距。
步骤S200、通过所述温控装置11控制所述伸缩板12的温度，以使所述伸缩板12伸缩并调整所述微器件20的间距至预设间距。
具体地，所述转移板30包括：板体31、设置在所述板体31上的第二粘性层32；或者，所述转移板30包括多个凸块33、设置在每个所述凸块33上的第二粘性层32。所述第一粘性层13对所述微器件20的粘性小于所述第二粘性层32对所述微器件20的粘性。具体如上所述。
具体地，所述预设间距为相邻两个凸块33之间的间距d的整数倍。如图2所示，温控装置11调节温度之前，载板10上有四个微器件20，4个微器件20分别与4个依次排列的第二粘性层32对准，也就是说，相邻两个微器件20所对应第二粘性层32也是相邻的，此时。如图3所示，经过伸缩板12伸张后，相邻两个微器件20对应的第二粘性层32是相间的，中间间隔了一个第二粘性层32，此时预设间距为2d。如图4所示，继续经过伸缩板12伸张，相邻两个微器件20对应的第二粘性层32中间相隔了两个第二粘性层32，此时预设间距为3d。
步骤S300、通过所述转移板30对所述微器件20进行转移。
具体地，步骤S300包括：
步骤S310、将所述转移板30压合在所述微器件20上，并通过所述第二粘性层32将所述微器件20与板体31连接。
如图5所示，将转移板30下压则第二粘性层32粘住微器件20的上表面。
步骤S320、将所述转移板30升起使所述微器件20与所述第一粘性层13分离，并 进行转移。
如图6所示，由于第二粘性层32对微器件20的粘性大于第一粘性层13对微器件20的粘性，当升起转移板30时，微器件20的下表面与第一粘性层13分离，从而可以将微器件20转移到其它装置上。
综上所述，本发明所提供的一种巨量转移的载板、巨量转移装置及其方法，所述巨量转移的载板包括：温控装置、位于所述温控装置上的伸缩板以及设置在所述伸缩板上的第一粘性层；所述温控装置用于控制所述伸缩板的温度，所述伸缩板用于根据温度变化进行伸缩，以调整所述第一粘性层上粘附的微器件的间距。在巨量转移过程中，将微器件通过第一粘性层粘在伸缩板上，在需要调整微器件的间距，则可以通过温控装置调整伸缩板的温度，伸缩板受到温度变化的影响会进行伸张或收缩，从而带动与伸缩板粘连的微器件的间距的增加或减小，从而在进一步的巨量转移过程中，微器件的间距就得到了调整。
应当理解的是，本发明的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (16)

  1. 一种巨量转移的载板，其特征在于，包括：温控装置、位于所述温控装置上的伸缩板以及设置在所述伸缩板上的第一粘性层；所述温控装置用于控制所述伸缩板的温度，所述伸缩板用于根据温度变化进行伸缩，以调整所述第一粘性层上粘附的微器件的间距。
  2. 根据权利要求1所述的巨量转移的载板，其特征在于，所述伸缩板采用正热膨胀材料和/或负热膨胀材料制成。
  3. 根据权利要求1所述的巨量转移的载板，其特征在于，所述伸缩板呈线性膨胀。
  4. 根据权利要求1所述的巨量转移的载板，其特征在于，所述伸缩板沿长度方向和/或宽度方向伸缩。
  5. 根据权利要求1所述的巨量转移的载板，其特征在于，所述温控装置包括：与所述伸缩板接触的平板、用于对所述平板加热的加热装置。
  6. 根据权利要求5所述的巨量转移的载板，其特征在于，所述温控装置还包括：用于对所述平板降温的降温装置。
  7. 根据权利要求5所述的巨量转移的载板，其特征在于，所述平板的尺寸大于所述伸缩板在伸张状态下的尺寸。
  8. 一种巨量转移装置，其特征在于，包括：如权利要求1-7任意一项所述的巨量转移的载板、与所述载板配合使用的转移板；所述转移板用于转移所述载板上的微器件。
  9. 根据权利要求8所述的巨量转移装置，其特征在于，所述转移板包括：板体、设置在所述板体上的第二粘性层；所述第一粘性层对所述微器件的粘性小于所述第二粘性层对所述微器件的粘性。
  10. 根据权利要求8所述的巨量转移装置，其特征在于，所述转移板包括多个凸块、设置在每个所述凸块上的第二粘性层；所述第一粘性层对所述微器件的粘性小于所述第二粘性层对所述微器件的粘性。
  11. 根据权利要求9所述的巨量转移装置，其特征在于，所述多个凸块呈阵列排布，且所述微器件之间的间距是所述多个凸块之间间距的整数倍。
  12. 根据权利要求10所述的巨量转移装置，其特征在于，所述微器件的尺寸小于或等于所述凸块的尺寸。
  13. 一种巨量转移方法，其特征在于，采用如权利要求8任意一项所述巨量转移装置，并包括以下步骤：
    通过所述载板上的第一粘性层粘附转移多个微器件；
    通过所述温控装置控制所述伸缩板的温度，以使所述伸缩板伸缩并调整所述微器件的间距至预设间距；
    通过所述转移板对所述微器件进行转移。
  14. 根据权利要求13所述的巨量转移方法，其特征在于，所述转移板包括：板体、设置在所述板体上的第二粘性层；或者，所述转移板包括多个凸块、设置在每个所述凸块上的第二粘性层。
  15. 根据权利要求14所述的巨量转移方法，其特征在于，所述第一粘性层对所述微器件的粘性小于所述第二粘性层对所述微器件的粘性；
    所述通过所述转移板对所述微器件进行转移，包括：
    将所述转移板压合在所述微器件上，并通过所述第二粘性层将所述微器件与板体连接；
    将所述转移板升起使所述微器件与所述第一粘性层分离，并进行转移。
  16. 根据权利要求14所述的巨量转移方法，其特征在于，所述预设间距为相邻两个凸块之间的间距的整数倍。
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Publication number Priority date Publication date Assignee Title
CN112992753A (zh) * 2020-05-22 2021-06-18 重庆康佳光电技术研究院有限公司 巨量转移方法和装置
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601657A (zh) * 2016-12-12 2017-04-26 厦门市三安光电科技有限公司 微元件的转移系统、转移方法、制造方法、装置和电子设备
CN108010994A (zh) * 2017-12-15 2018-05-08 惠州雷通光电器件有限公司 微发光二极管转移方法
CN108389825A (zh) * 2018-02-06 2018-08-10 中华映管股份有限公司 转置装置
WO2018216621A1 (ja) * 2017-05-22 2018-11-29 日立化成株式会社 半導体装置の製造方法及びエキスパンドテープ
CN109411392A (zh) * 2018-10-16 2019-03-01 广东工业大学 一种Micro-LED的巨量转移装置及转移方法
CN109427643A (zh) * 2017-09-04 2019-03-05 东捷科技股份有限公司 改变电子元件排列的方法
CN110289240A (zh) * 2019-06-27 2019-09-27 上海天马微电子有限公司 电子元件巨量转移头及转移方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10643880B2 (en) * 2018-02-13 2020-05-05 Mikro Mesa Technology Co., Ltd. Method for transferring micro device
CN110391165B (zh) * 2018-04-18 2021-09-14 英属开曼群岛商镎创科技股份有限公司 转移载板与晶粒载板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601657A (zh) * 2016-12-12 2017-04-26 厦门市三安光电科技有限公司 微元件的转移系统、转移方法、制造方法、装置和电子设备
WO2018216621A1 (ja) * 2017-05-22 2018-11-29 日立化成株式会社 半導体装置の製造方法及びエキスパンドテープ
CN109427643A (zh) * 2017-09-04 2019-03-05 东捷科技股份有限公司 改变电子元件排列的方法
CN108010994A (zh) * 2017-12-15 2018-05-08 惠州雷通光电器件有限公司 微发光二极管转移方法
CN108389825A (zh) * 2018-02-06 2018-08-10 中华映管股份有限公司 转置装置
CN109411392A (zh) * 2018-10-16 2019-03-01 广东工业大学 一种Micro-LED的巨量转移装置及转移方法
CN110289240A (zh) * 2019-06-27 2019-09-27 上海天马微电子有限公司 电子元件巨量转移头及转移方法

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