WO2021093650A1 - Dispositif de pulvérisation cathodique - Google Patents

Dispositif de pulvérisation cathodique Download PDF

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Publication number
WO2021093650A1
WO2021093650A1 PCT/CN2020/126456 CN2020126456W WO2021093650A1 WO 2021093650 A1 WO2021093650 A1 WO 2021093650A1 CN 2020126456 W CN2020126456 W CN 2020126456W WO 2021093650 A1 WO2021093650 A1 WO 2021093650A1
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Prior art keywords
workpiece
sputtering
processed
base
reaction chamber
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PCT/CN2020/126456
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English (en)
Chinese (zh)
Inventor
李默林
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北京北方华创微电子装备有限公司
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Priority to KR1020227014726A priority Critical patent/KR20220074934A/ko
Priority to KR1020237040688A priority patent/KR20230164245A/ko
Publication of WO2021093650A1 publication Critical patent/WO2021093650A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Definitions

  • the invention belongs to the field of sputtering technology, and particularly relates to a sputtering device.
  • the copper interconnection process is an indispensable process for the back-end manufacturing of the chip in the prior art.
  • the copper interconnection process mainly includes the following processes, namely, first depositing a diffusion barrier layer in the etched holes, then depositing a copper seed layer, and finally The holes are filled by electroplating, and the copper interconnection lines are finally formed.
  • the aspect ratio of the via or trench
  • PVD Physical Vapor Deposition
  • the PVD equipment used in the prior art copper reflow technology usually includes a ring-shaped reaction chamber, a support pedestal arranged in the reaction chamber for carrying a wafer, and a target material arranged above the support pedestal.
  • a direct current (DC) power supply will apply DC power to the target material to make it a negative pressure with respect to the grounded reaction chamber, thereby discharging the reaction gas (such as argon) in the reaction chamber.
  • Plasma is generated and the positively charged argon ions are attracted to the negatively biased target.
  • metal atoms will escape the target surface and be deposited on the wafer.
  • a heating lamp is usually added to the reaction chamber to heat the wafer by means of thermal radiation after the film deposition process is completed.
  • the heating efficiency of this heating method is low, resulting in a slower heating rate of the wafer, resulting in a longer cycle time for the reflow process (usually more than 30 minutes). If multiple reflow process cycles are required, it will be expensive. The time is longer, which seriously affects the yield.
  • the embodiment of the present invention aims to solve at least one of the technical problems in the prior art, and proposes a sputtering device, which can increase the heating rate, so that the workpiece to be processed can quickly rise in temperature, thereby effectively shortening the reflow process cycle time and improving Productivity.
  • a sputtering device which includes a reaction chamber, in which a susceptor for carrying a workpiece to be processed is provided, and further includes:
  • a thimble mechanism arranged in the reaction chamber, the thimble mechanism can generate a relative lifting movement with the base, so as to be able to lift from the base and carry the workpiece to be processed;
  • a microwave heating mechanism is arranged in the reaction chamber, the microwave heating mechanism includes a moving unit and a microwave transmitter connected to it, wherein the moving unit is used when the workpiece to be processed is carried by the ejector mechanism , Moving the microwave transmitter below the workpiece to be processed, so that the microwave transmitter can heat the workpiece to be processed by emitting microwaves toward the workpiece.
  • the reaction chamber includes:
  • a sputtering chamber where a target material and a sputtering mechanism are arranged on the top of the sputtering chamber for performing a sputtering process on the workpiece to be processed;
  • the storage cavity is located below the sputtering cavity, the microwave heating mechanism is arranged in the storage cavity, and is used to perform a reflow process on the workpiece to be processed, and in the storage cavity and the sputtering cavity There is a through hole between the two to communicate with each other, the base is disposed in the receiving cavity and corresponds to the through hole, and the base is liftable to pass through the through hole Move between the sputtering cavity and the receiving cavity.
  • the sputtering mechanism includes:
  • the direct current power supply is connected to the target material and is used to apply a bias voltage to the target material.
  • the thimble mechanism can be raised and lowered, or the thimble mechanism is fixed relative to the base; and, the thimble mechanism includes a plurality of thimbles, and the plurality of thimbles pass through the base. In the seat or under the base.
  • the multiple thimbles are made of materials that can absorb microwaves.
  • the material that can absorb microwaves includes ceramics.
  • the mobile unit includes:
  • the rotating arm is vertically arranged in the reaction chamber and located on one side of the base, and the rotating arm can rotate around its axis;
  • the transmission arm is connected with the rotating arm, and the microwave transmitter is arranged on the transmission arm.
  • the electrical connection line of the microwave transmitter is led out of the reaction chamber through the rotating arm.
  • the transmission arm is made of metal material, and a cooling device is also provided on the transmission arm for cooling the microwave transmitter.
  • the cooling device includes a cooling water channel arranged in the transfer arm, the cooling water channel includes a water inlet pipeline, a cooling pipeline, and a water outlet pipeline, and the water inlet pipeline and the water outlet pipeline are arranged at In the transmission arm, two ends of the cooling pipeline are respectively communicated with the water inlet pipeline and the water outlet pipeline, and the cooling pipeline is spirally wound on the microwave transmitter.
  • the sputtering device provided by the embodiment of the present invention emits microwaves toward the workpiece (wafer) to be processed through a microwave transmitter, and the microwave directly acts on the polar molecules in the workpiece (wafer) to heat the workpiece to be processed,
  • the workpiece to be processed has a fast heating rate.
  • the metal film sputtered and deposited on the surface of the workpiece to be processed can effectively reflect the microwave emitted from below and return it to the workpiece to be processed, thereby further improving the microwave utilization efficiency, thereby increasing the heating efficiency, and enabling the workpiece to be processed
  • the rapid temperature rise can realize the reflow process, thereby effectively shortening the cycle time of the reflow process and improving the production efficiency.
  • FIG. 1 is a schematic structural diagram of a sputtering device provided by an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the structure of the sputtering device provided by an embodiment of the present invention when heating a workpiece to be processed.
  • FIG 3 is a schematic top view of a microwave transmitter embedded in a transmission arm and a plurality of thimbles used in an embodiment of the present invention.
  • Fig. 4 is a schematic top view of the microwave transmitter used in an embodiment of the present invention moving below the workpiece to be processed.
  • Fig. 5 is a schematic diagram of the arrangement of cooling water channels in the transfer arm used in an embodiment of the present invention.
  • FIG. 1 shows a schematic structural diagram of a sputtering device 1 provided by an embodiment of the present invention.
  • the sputtering device 1 is used to perform a sputtering process and a reflow process on the workpiece 12 to be processed.
  • particles ions or neutral atoms, molecules
  • the surface of the target material 11 is bombarded so that the atoms or molecules adjacent to the surface of the target material 11 gain enough energy to finally escape the surface of the target material 11 and deposit on the workpiece 12 to be processed to form a thin film covering the workpiece 12 to be processed.
  • the workpiece 12 to be processed is preferably a wafer, but it is not limited thereto.
  • the sputtering device 1 includes a reaction chamber 2, a base 3, a thimble mechanism 5, and a microwave heating mechanism 6.
  • the reaction chamber 2 is mainly used to provide accommodation for the sputtering process and the reflow process of the workpiece 12 to be processed. space. Please refer to FIG. 1 again.
  • the reaction chamber 2 includes a sputtering chamber 21 and a receiving chamber 22.
  • a target 11 is provided on the top of the sputtering chamber 21, and the target 11 may include copper (Cu).
  • Sputtering materials such as tantalum (Ta), titanium (Ti) or aluminum (Al), but not limited to this.
  • a sputtering mechanism 4 is also provided on the top of the sputtering chamber 21, which acts on the target material 11 and is used to perform a sputtering process on the workpiece 12 to be processed.
  • the sputtering mechanism 4 includes a magnetron 41 and a DC power supply (not shown in the figure).
  • the magnetron 41 is arranged on the back of the target 11, but it is not limited to this. In this embodiment, there may be no special requirements for the selection of the magnetron 41, and the conventional selection of those skilled in the art can be referred to. Please refer to FIG. 1 again.
  • the reaction chamber 2 is grounded, and the DC power supply is connected to the target 11 in the reaction chamber 2 (sputtering chamber 21 ).
  • the DC power supply is used to apply a bias voltage to the target 11.
  • the DC power supply applies a bias voltage to the target material 11 to make it a negative pressure with respect to the grounded reaction chamber 2 so that the reaction gas (for example, argon) in the reaction chamber 2 is discharged.
  • the reaction gas for example, argon
  • Plasma is generated and the positively charged argon ions are attracted to the negatively biased target 11.
  • the metal atoms will escape from the surface of the target, move downwards, and be deposited on the target material to be processed.
  • a metal film covering the workpiece 12 to be processed is formed to complete the magnetron sputtering process.
  • the structure of the sputtering mechanism 4 is not limited to this, and those skilled in the art can also select other suitable types of sputtering processes according to actual sputtering requirements.
  • the receiving cavity 22 is located below the sputtering cavity 21, for example, is arranged coaxially with the sputtering cavity 21, and there is a through hole 23 between the receiving cavity 22 and the sputtering cavity 21, and the through hole 23 is used to connect the receiving cavity 22 to the sputtering cavity.
  • the shooting cavity 21 is communicated so that the workpiece 12 to be processed can move between the receiving cavity 22 and the sputtering cavity 21 through the through hole 23.
  • reaction chamber 2 is not limited to this. In practical applications, those skilled in the art can also select other suitable structures of the reaction chamber 2 according to the teaching of this embodiment.
  • the sputtering cavity 21 and the receiving cavity 22 are defined by the same cavity 24.
  • the cavity 24 is usually a ring-shaped reaction cavity, but it is not limited thereto.
  • the susceptor 3 is disposed in the reaction chamber 2, specifically disposed in the receiving cavity 22 at a position corresponding to the through hole 23, and is used to carry the workpiece 12 to be processed.
  • the susceptor 3 can be raised and lowered so as to be able to rise into the sputtering chamber 21 through the through hole 23, so that the workpiece 12 to be processed is located directly under the target material 11 for sputtering.
  • the susceptor 3 is lowered into the receiving cavity 22 through the through hole 23, so that the workpiece 12 to be processed returns to the receiving cavity 22 for a reflow process.
  • the above-mentioned base 3 is preferably made of ceramic material, but it is not limited thereto.
  • the ejector mechanism 5 is arranged in the reaction chamber 2, and the ejector mechanism 5 can generate relative lifting motion with the base 3, so as to be able to lift from the base 3 and carry the workpiece 12 to be processed.
  • the workpiece to be processed 12 is located above the base 3, so that the microwave heating mechanism 6 can move below the workpiece 12 to be processed for heating.
  • the above-mentioned ejector mechanism 5 and the base 3 to generate relative lifting movements.
  • One is that both the above-mentioned ejector mechanism 5 and the base 3 can be raised and lowered, and the other is that the above-mentioned ejector mechanism 5 is fixed.
  • the base 3 can be raised and lowered. Both of these two methods can realize that the ejector mechanism 5 can lift up from the base 3 and carry the workpiece 12 to be processed, so that the workpiece 12 to be processed is located above the base 3.
  • the thimble mechanism 5 includes a plurality of thimble 51, and the plurality of thimble 51 can be inserted in the base 3, that is, the plurality of thimble can be accommodated in the base 3.
  • the arrangement of the plurality of thimble 51 is different. Not limited to this, those skilled in the art can also choose other suitable setting methods according to the teaching of this embodiment.
  • a plurality of thimble pins 51 can also be arranged under the base 3. When the workpiece 12 to be processed is subjected to the reflow process, more A thimble 51 passes through the base 3 to lift the workpiece 12 to be processed from the base 3 and carry the workpiece 12 to be processed.
  • the way for the plurality of thimbles 51 to pass through the base 3 may be that the plurality of thimbles 51 rise and pass through the base 3, or it may be that the plurality of thimbles 51 are fixed and fall through the base 3 to make A plurality of thimbles 51 pass through the base 3.
  • the multiple thimbles 51 are made of a material that can absorb microwaves, such as ceramics. Since metal materials can reflect microwaves, if the multiple ejector pins 51 are made of metal material, when they are in contact with the workpiece 12 to be processed, the contact positions of the multiple ejector pins 51 will absorb microwaves, resulting in uneven temperature rise of the workpiece 12 to be processed.
  • the multiple ejector pins 51 are made of materials that can absorb microwaves, which can avoid uneven temperature rise of the contact positions of multiple ejector pins 51 with the workpiece 12 to be processed.
  • FIG. 3 shows a schematic top view of the microwave transmitter 62 embedded in the transmission arm 611 and multiple ejector pins 51 used in an embodiment of the present invention.
  • the number of thimble 51 is three, and when the transfer arm 611 is located above the base 3, the three thimble 51 are all located around the transfer arm 611, and are distributed near the edge of the workpiece 12 to be processed.
  • the three thimbles 51 are distributed at intervals in the circumferential direction to realize the stable support of the workpiece 12 to be processed.
  • the number of thimble 51 can be set according to specific conditions, for example, four, five, or more than five, and the distribution mode of thimble 51 can be set.
  • the microwave heating mechanism 6 is arranged in the reaction chamber 2. Please refer to FIG. 1 again. In this embodiment, the microwave heating mechanism 6 is disposed in the receiving cavity 22. Please refer to FIG. 2, which shows a schematic structural diagram of the sputtering device 1 provided by an embodiment of the present invention when the workpiece 12 to be processed is heated.
  • the microwave heating mechanism 6 includes a mobile unit 61 and a microwave transmitter 62.
  • the microwave transmitter 62 is connected to the mobile unit 61.
  • the mobile unit 61 is used to transfer the microwave transmitter when the workpiece 12 to be processed has completed the sputtering process and is carried by the ejector mechanism 5.
  • the microwave transmitter 62 moves below the workpiece 12 to be processed; the microwave transmitter 62 is used to emit microwaves to the workpiece 12 to be processed to heat the workpiece 12 until the temperature required for the reflow process is reached.
  • the microwave emitted by the microwave transmitter 62 usually refers to an electromagnetic wave with a frequency between 300 MHz and 300,000 MHz and a wavelength below 1 m.
  • the microwave transmitter 62 is not limited to be applied to the reflow process after the magnetron sputtering shown in the above embodiment, and can also be applied to other reflow processes after the sputtering process. In this embodiment, there may be no special requirements for the selection of the microwave transmitter 62, and the conventional selection of those skilled in the art can be referred to.
  • the moving unit 61 includes a transmission arm 611 and a rotating arm 612, wherein the rotating arm 612 is vertically arranged in the reaction chamber 2 (specifically in the receiving cavity 22), and It is located on one side of the base 3, and the rotating arm 612 can rotate around its axis, and the rotation angle is preferably 90 degrees, but not limited to this. Those skilled in the art can also choose to set the corresponding rotation angle according to the actual situation. .
  • the rotation of the rotating arm 612 is usually driven by a stepping motor (not shown in the figure) and a corresponding drive structure (such as a variable speed gear box, etc.), but it is not limited to this, and those skilled in the art can also Choose other suitable driving means according to the common sense of the existing technicians.
  • One end of the transmission arm 611 is connected with the rotating arm 612 to be able to drive the transmission arm 611 to rotate around the axis of the rotating arm 612 when rotating.
  • the transmission arm 611 and the rotating arm 612 are connected vertically, and the connection method may be a bolt connection or a welding connection, but it is not limited to this.
  • the structure of the transmission arm 611 and the distribution of the thimble 51 cooperate with each other, so that the transmission arm 611 does not collide with the thimble mechanism 5 when the transmission arm 611 rotates along its rotation path.
  • the microwave transmitter 62 is installed on the transmission arm 611.
  • it can be fixed on the transmission arm 611 by embedding.
  • an embedded slot is provided on the transmission arm 611 to emit microwaves.
  • the device 62 is fixed therein, but it is not limited to this.
  • the electrical connection line of the microwave transmitter 62 further disclosed in this embodiment is led out of the reaction chamber 2 through the rotating arm 612 to realize the connection with the external controller, but it is not limited to this.
  • FIG. 4 shows a schematic top view of the microwave transmitter 62 moving below the workpiece 12 to be processed according to an embodiment of the present invention.
  • the rotation of the transmission arm 611 drives the microwave transmitter 62 to rotate and move to the bottom of the workpiece 12 to be processed.
  • the microwave transmitter 62 emits microwaves to the workpiece 12 to be processed, and heats the workpiece 12 to be processed, but the structure of the moving unit 61 is not limited Here, those skilled in the art can also choose other suitable structures of the mobile unit 61 according to the teaching of this embodiment.
  • the transmission arm 611 of this embodiment is made of metal material to reflect the microwaves and protect the base 3.
  • the metal transmission arm 611 has a faster temperature rise and a higher temperature, and the microwave transmitter 62 is installed on the transmission arm 611, the temperature of the microwave transmitter 62 will be too high under long-term operation, which may cause it to In order to solve this problem, please refer to FIG. 3 and FIG. 4 again.
  • a cooling device is also provided on the transmission arm 611 to cool the microwave transmitter 62.
  • the cooling device may have various structures.
  • the cooling device may include a cooling water channel 613 provided in the transmission arm 611 to cool the microwave transmitter 62 by water cooling.
  • FIG. 5 shows a schematic diagram of the arrangement of the cooling water channels 613 in the transmission arm 611 used in an embodiment of the present invention.
  • the cooling water passage 613 includes a water inlet pipe 6131, a cooling pipe 6132, and a water outlet pipe 6133.
  • the water inlet pipe 6131 and the water outlet pipe 6133 are both arranged in the transmission arm 611, and the two ends of the cooling pipe 6132 are connected to the water inlet pipe respectively.
  • 6131 and the water outlet pipe 6133 are connected to exchange the water in the cooling pipe 6132 in real time through the water inlet pipe 6131 and the water outlet pipe 6133.
  • the cooling pipe 6132 is spirally wound on the microwave transmitter 62. This winding method can increase the connection with the microwave The contact area of the emitter 62 can thereby increase the water cooling efficiency, but it is not limited to this.
  • the sputtering device 1 provided in this embodiment can be applied to PVD equipment for the sputtering process and the reflow process in the PVD manufacturing process.
  • the target 11 is installed and fixed on the top of the reaction chamber 2 (sputtering chamber 21)
  • the workpiece 12 to be processed is placed on the base 3, and the base 3 drives the waiting
  • the workpiece 12 to be processed rises into the sputtering chamber 21, and the sputtering mechanism 4 acts on the target material 11 to cause the metal atoms or molecules on the surface of the target material 11 to escape and move downward to deposit on the workpiece to be processed 12 to form a covering
  • the metal film on the workpiece 12 to be processed can be applied to PVD equipment for the sputtering process and the reflow process in the PVD manufacturing process.
  • the base 3 drives the workpiece 12 to be processed down into the receiving cavity 22 for a reflow process, and the ejector mechanism 5 lifts the workpiece 12 to be processed from the base 3 and carries the workpiece 12 to be processed.
  • the rotating arm 612 drives the transmission arm 611 to rotate around the axis of the rotating arm 612 to rotate the microwave transmitter 62 below the workpiece 12 to be processed; then, the microwave transmitter 62 is controlled to face the back of the workpiece 12 to be processed
  • the microwaves will directly act on the polar molecules in the workpiece 12 to be processed to heat the workpiece 12.
  • the metal film sputtered and deposited on the upper surface of the workpiece 12 can effectively reflect the microwave emitted from below.
  • the microwave utilization efficiency can be further improved, and the heating efficiency can be further improved, so that the workpiece 12 to be processed can quickly heat up and realize the reflow process, thereby effectively shortening the reflow process cycle time and improving production efficiency.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un dispositif de pulvérisation cathodique, comprenant une chambre de réaction, dans laquelle une base pour supporter une pièce à travailler à traiter est prévue. Le dispositif de pulvérisation cathodique comprend en outre : un mécanisme de broche d'éjection, qui est disposé dans la chambre de réaction et qui est susceptible d'effectuer un mouvement de levage par rapport à la base, de façon à se soulever de la base et à porter la pièce à travailler ; et un mécanisme de chauffage par micro-ondes disposé dans la chambre de réaction et comprenant une unité mobile et un émetteur de micro-ondes relié à l'unité mobile, l'unité mobile étant utilisée pour déplacer, lorsque la pièce à travailler est portée par le mécanisme de broche d'éjection, l'émetteur de micro-ondes vers une position sous la pièce à travailler de telle sorte que l'émetteur de micro-ondes puisse chauffer la pièce à travailler par émission de micro-ondes vers la pièce à travailler. Selon le dispositif de pulvérisation cathodique des modes de réalisation de la présente invention, le taux de chauffage peut être amélioré de telle sorte que la pièce à travailler à traiter puisse être chauffée rapidement ; ainsi, le temps de cycle d'un processus de refusion est efficacement raccourci et l'efficacité de production est améliorée.
PCT/CN2020/126456 2019-11-11 2020-11-04 Dispositif de pulvérisation cathodique WO2021093650A1 (fr)

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