WO2021088187A1 - Press-fit power module inspection system and inspection method - Google Patents
Press-fit power module inspection system and inspection method Download PDFInfo
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- WO2021088187A1 WO2021088187A1 PCT/CN2019/123834 CN2019123834W WO2021088187A1 WO 2021088187 A1 WO2021088187 A1 WO 2021088187A1 CN 2019123834 W CN2019123834 W CN 2019123834W WO 2021088187 A1 WO2021088187 A1 WO 2021088187A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
Definitions
- the invention designs a crimping device based on a multi-layer PCB board that is easy to detect, and this device can conveniently test the position of the failure subunit of the crimping device.
- crimped power modules have the advantages of high voltage, large current, low stray inductance, fast switching speed, and double-sided heat dissipation. Therefore, crimped power modules have become the mainstream of semiconductor devices in HVDC transmission. select.
- the crimping type power module uses pressure to connect the sub-units in parallel and crimping together, short-circuit failures often occur during use.
- all chips are connected in parallel. Once there is a short-circuit inside the chip, the entire device will be damaged. Invalidate.
- the present invention can realize a crimping power module detection system and a detection method that can be independently controlled and detected inside the power module.
- a crimping type power module detection system including: crimping type power module, power supply unit, signal acquisition unit, control unit, driving unit, action unit;
- the crimping type power module includes at least one power module layer, the power module layer includes n*m sub-unit chips, n signal transmission bars for connecting the gates of the sub-unit chips in each row, and the signal transmission bar It includes m-layer stacked integrated signal transmission sub-strips, and each signal transmission sub-strip is used to transmit a signal of a sub-unit chip.
- control unit is used to send a control signal to the output terminal of the gate control port of the designated sub-unit chip; and determine whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit.
- the judging whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit is: adopting the driving unit to output at least two different gate driving voltages to the designated sub-unit chip, and judging whether the current of the sub-unit chip is controlled by the gate. Change, if it changes, the sub-unit chip is not short-circuited, if it does not change, the sub-unit chip is short-circuited.
- the signal acquisition unit is used to collect voltage and current signals through AD signals;
- the power supply unit is a voltage and current source;
- the sub-unit chip includes a power chip and an FRD chip, and the power chip includes a MOSFET chip or an IGBT chip .
- the action unit includes a motor, and the motor removes the faulty sub-unit chip under the control of the control unit.
- a method for detecting a crimping power module includes:
- the control unit is used to control the driving unit to output the first driving voltage V C1 to the designated at least one sub-unit chip C xy ; the first collection voltage value V 1 and the first collection of the sub-unit chip under the first driving voltage V C1 are collected Current value I 1 ; 1 ⁇ x ⁇ n, ⁇ 1 ⁇ y ⁇ m;
- the control unit is used to control the driving unit to output a second driving voltage V C2 that is different from the voltage value of the first driving voltage V C1 to the designated sub-unit chip; the first driving voltage V C2 of the sub-unit chip C xy under the first driving voltage V C2 is collected 2. Collecting the voltage value V 2 and the second collecting current value I 2 ;
- the S3 judging whether the sub-unit chip C xy has a fault is: if the first collected voltage value V 1 is equal to the second collected voltage value V 2 , the sub-unit chip is short-circuited.
- the detection method further includes S4: if the sub-unit chip C xy fails, the control unit is used to control the action unit to remove the failed sub-unit chip C xy .
- the S3 includes: repeating S2T times with T different driving voltages V Cj , correspondingly collecting T j-th collected voltage values V j and j-th collected current values I j , 1 ⁇ j ⁇ T, compare arbitrarily Two j-th collected voltage values V j and any two j-th collected current values I j .
- the step range of the T different driving voltages V Cj is 0.5-5V, and the time interval for collecting the T j-th collected voltage value V j and the j-th collected current value I j ranges from 20 ns to 200 us. .
- the crimping power detection module system of the present invention uses a multi-layer signal transmission strip when the gate of the sub-unit chip of the crimping type power module to be detected is led out, and the copper-clad surface of each layer of the external test terminal leaks in sequence.
- This special The signal transmission bar can realize the drive of the specified chip in the device, and can realize the independent drive of one or more sub-unit chips or the troubleshooting and replacement of the specified one or more sub-unit chips.
- Figure 1 is a schematic diagram of a crimping power module provided in the first embodiment
- Figure 2 is a schematic diagram of the crimping power module provided in the first embodiment
- Fig. 3 is a schematic diagram of the detection system of the crimping power module detection system provided in the first embodiment
- Fig. 4 is a flow chart of the detection method of the crimping power module detection system provided in the first embodiment
- This embodiment provides a crimping type power module detection system, as shown in Figs. 1-3.
- the crimping type power module detection system provided by this embodiment is shown in FIG. 3, and includes: crimping type power module, power supply unit, signal acquisition unit, control unit, driving unit, and action unit.
- the crimping power module of this embodiment includes a chip, FR4 board, copper block, and copper plate arranged in order from top to bottom, and the upper end cover is separated into two layers; the bottom layer is made of separate copper One piece is embedded in the FR4 board and connected to the collector (C pole) of each chip, and the end cover is covered with an insulating outer frame, and the copper plate is placed on the top layer as the end cover; the gate is led out using a multilayer PCB board, and the external test terminals The copper-clad surface of the multi-layer PCB board leaks out in turn, this special PCB board can realize the drive of the specified chip in the device.
- the signal transmission strip in the crimping power module provided by this embodiment, which includes five layers of PCB strips with decreasing length from top to bottom bonded together.
- the preparation method of the signal transmission strip includes: according to the distance between the five sub-unit chips in each row and the outer edge of the power module, cutting five single strips with a length corresponding to the distance one-to-one on the PCB. If the number of sub-unit chips in each row is other, or each signal transmission bar is used to transmit the signal of the sub-unit chips in each column, the number of single PCBs is based on the number of sub-unit chips in each column or row of the press-fit power chip determine.
- Figure 5 shows the prepared single-layer PCB.
- the PCB is staggered and bonded by glue, and the connection with the gate signal of the chip and the outermost lead part are leaked during bonding to facilitate the contact of the thimble.
- Glue can use silicone glue, phenolic resin glue, urea-formaldehyde resin glue, temperature-resistant epoxy glue, polyimide glue, etc.
- the power supply unit is a voltage and current source, which is used to supply power to the crimping power module; the action unit includes a motor, which is used to replace the faulty sub-unit chip under the control of the control unit.
- the signal acquisition unit collects the voltage value and current value of the sub-unit chip.
- the control unit is used to send a control signal to the output terminal of the gate control port of the designated sub-unit chip; and judge whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit. Judging whether the sub-unit chip is faulty is: using the driving unit to output at least two different gate drive voltages to the specified sub-unit chip, and judging whether the current of the sub-unit chip is changed by the gate control, if it changes, the sub-unit chip is not short-circuited, If it does not change, the sub-unit chip is short-circuited.
- the control unit also controls the motor to remove the faulty sub-unit chip.
- This embodiment also provides a method for detecting a crimping power module, as shown in FIG. 4.
- Step 1 Start.
- Step 2 Control the single-chip microcomputer to output control signals to the gate control port of the designated sub-unit chip.
- Step 3 The single-chip microcomputer controls the connection port of the collector (C pole) of the corresponding sub-unit chip, and the given voltage is 5V.
- Step 4 Real-time detection of the voltage and current values of the collector emitter (CE electrode) of the sub-unit chip.
- Step 5 Adjust the gate drive voltage from 0V to 15V with a step length of 1V and a measurement interval of 200us.
- Step 6 Determine whether the detected collector-emitter (CE electrode) voltage and current are changed under the control of the grid. If it changes, it means that the sub-unit chip has no short-circuit fault, and the single-chip microcomputer is used to control the measurement of the next set of designated sub-unit chips; if it does not change, it means that the sub-unit chip whose current and voltage has not changed in the above-mentioned sub-unit chip has a short-circuit fault.
- CE electrode collector-emitter
- Step 7 Use a single-chip microcomputer to control the motor to remove the sub-unit chip that has a short-circuit fault.
- the multi-layer signal transmission strip is used when the new product grid of the sub-unit of the crimping power module to be tested is led out, and the copper-clad surface of each layer of the external test terminal leaks in turn.
- the special signal transmission bar can realize the driving of the specified chip in the device, and can realize the independent driving of one or more sub-unit chips or the troubleshooting and replacement of the specified one or more sub-unit chips.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
Description
Claims (10)
- 一种压接式功率模块检测系统,其特征在于,包括:压接式功率模块,电源单元,信号采集单元,控制单元,驱动单元,动作单元;A crimping type power module detection system, which is characterized by comprising: crimping type power module, power supply unit, signal acquisition unit, control unit, driving unit, and action unit;所述压接式功率模块包括至少一层功率模块层,所述功率模块层包括n*m个子单元芯片,n个用于连接每行子单元芯片栅极的信号传输条,所述信号传输条包括m层堆叠集成的信号传输子条,每个信号传输子条用于传输一个子单元芯片的信号。The crimping type power module includes at least one power module layer, the power module layer includes n*m sub-unit chips, n signal transmission bars for connecting the gates of the sub-unit chips in each row, and the signal transmission bar It includes m-layer stacked integrated signal transmission sub-strips, and each signal transmission sub-strip is used to transmit a signal of a sub-unit chip.
- 根据权利要求1所述的压接式功率模块检测系统,其特征在于,所述控制单元用于对指定子单元芯片栅极控制端口输出端发出控制信号;并根据信号采集单元采集的信号判断子单元芯片是否出现故障。The crimping power module detection system according to claim 1, wherein the control unit is used to send a control signal to the output terminal of the gate control port of the specified sub-unit chip; and determine the sub-unit according to the signal collected by the signal collection unit Whether the unit chip is faulty.
- 根据权利要求2所述的压接式功率模块检测系统,其特征在于,所述根据信号采集单元采集的信号判断子单元芯片是否出现故障为:采用驱动单元向指定子单元芯片输出至少两个不同的栅极驱动电压,判断子单元芯片电流是否受栅极控制变化,若变化,泽子单元芯片未短路,若不变化,则子单元芯片短路。The crimping power module detection system according to claim 2, wherein the judging whether the sub-unit chip is faulty according to the signal collected by the signal collecting unit is: using the driving unit to output at least two different types of chips to the specified sub-unit chip. To determine whether the current of the sub-unit chip is changed by the gate control, if it changes, the sub-unit chip is not short-circuited, if it does not change, the sub-unit chip is short-circuited.
- 根据权利要求1所述的压接式功率模块检测系统,其特征在于,所述信号采集单元用于通过AD信号采集电压于电流信号;所述电源单元为电压电流源;所述子单元芯片包括功率芯片及FRD芯片,所述功率芯片包括MOSFET芯片或IGBT芯片。The crimp-type power module detection system according to claim 1, wherein the signal acquisition unit is used to collect voltage and current signals through AD signals; the power supply unit is a voltage and current source; and the sub-unit chip includes Power chips and FRD chips. The power chips include MOSFET chips or IGBT chips.
- 根据权利要求1所述的压接式功率模块检测系统,其特征在于,所述动作单元包括电机,所述电机在控制单元的控制下移除故障子单元芯片。The crimping type power module detection system according to claim 1, wherein the action unit comprises a motor, and the motor removes the faulty sub-unit chip under the control of the control unit.
- 一种采用如权利要求1-5所述的压接式功率模块检测系统的压接式功率模块检测方法,其特征在于,包括:A crimp-type power module detection method using the crimp-type power module detection system according to claims 1-5, characterized in that it comprises:S1:采用控制单元控制驱动单元向指定至少一个子单元芯片C xy输出第一驱 动电压V C1;采集子单元芯片在第一驱动电压V C1下的的第一采集电压值V 1和第一采集电流值I 1;1<x<n,<1<y<m; S1: The control unit is used to control the driving unit to output the first driving voltage V C1 to the designated at least one sub-unit chip C xy ; the first collection voltage value V 1 and the first collection of the sub-unit chip under the first driving voltage V C1 are collected Current value I 1 ; 1<x<n, <1<y<m;S2:采用控制单元控制驱动单元向指定子单元芯片输出与第一驱动电压V C1的电压值不同的第二驱动电压V C2;采集子单元芯片C xy在第一驱动电压V C2下的的第二采集电压值V 2和第二采集电流值I 2; S2: The control unit is used to control the driving unit to output a second driving voltage V C2 that is different from the voltage value of the first driving voltage V C1 to the designated sub-unit chip; the first driving voltage V C2 of the sub-unit chip C xy under the first driving voltage V C2 is collected 2. Collecting the voltage value V 2 and the second collecting current value I 2 ;S3:比较第一采集电压值V 1与第二采集电压值V 2,以及第一采集电流值I 1与第二采集电流值I 2,判断子单元芯片C xy是否出现故障。 S3: Compare the first collected voltage value V 1 with the second collected voltage value V 2 , and the first collected current value I 1 with the second collected current value I 2 , and judge whether the sub-unit chip C xy is faulty.
- 根据权利要求6所述的压接式功率模块检测方法,其特征在于,所述S3判断子单元芯片C xy是否出现故障为:若第一采集电压值V 1与第二采集电压值V 2相等则子单元芯片短路。 The crimping type power module detection method according to claim 6, wherein the S3 judging whether the sub-unit chip C xy has a fault is: if the first collected voltage value V 1 is equal to the second collected voltage value V 2 Then the sub-unit chip is short-circuited.
- 根据权利要求6所述的压接式功率模块检测方法,其特征在于,所述检测方法还包括S4:若子单元芯片C xy出现故障,采用控制单元控制动作单元移除出现故障子单元芯片C xy。 The crimping type power module detection method according to claim 6, characterized in that the detection method further comprises S4: if the sub-unit chip C xy fails, the control unit is used to control the action unit to remove the failed sub-unit chip C xy .
- 根据权利要求6所述的压接式功率模块检测方法,其特征在于,所述S3包括:采用T个不相同的驱动电压V Cj重复S2T次,对应采集T个第j采集电压值V j和第j采集电流值I j,1<j<T,比较任意两个第j采集电压值V j和任意两个第j采集电流值I j。 The crimping type power module detection method according to claim 6, wherein the S3 comprises: using T different driving voltages V Cj to repeat S2T times, correspondingly collecting T j-th collected voltage values V j and The j-th collected current value I j , 1<j<T, compare any two j-th collected voltage values V j and any two j-th collected current values I j .
- 根据权利要求9所述的压接式功率模块检测方法,其特征在于,所述T个不相同的驱动电压V Cj步长范围为0.5-5V,所述采集T个第j采集电压值V j和第j采集电流值I j的时间间隔范围为20ns-200us。 The crimping type power module detection method according to claim 9, wherein the step range of the T different driving voltages V Cj is 0.5-5V, and the collected T j-th collected voltage values V j The time interval between and the j-th collected current value I j ranges from 20ns to 200us.
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CN201911069036.4A CN112782552B (en) | 2019-11-05 | 2019-11-05 | Compression joint type power module detection system and detection method |
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