WO2021088187A1 - Press-fit power module inspection system and inspection method - Google Patents

Press-fit power module inspection system and inspection method Download PDF

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Publication number
WO2021088187A1
WO2021088187A1 PCT/CN2019/123834 CN2019123834W WO2021088187A1 WO 2021088187 A1 WO2021088187 A1 WO 2021088187A1 CN 2019123834 W CN2019123834 W CN 2019123834W WO 2021088187 A1 WO2021088187 A1 WO 2021088187A1
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unit
sub
power module
collected
chip
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PCT/CN2019/123834
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French (fr)
Chinese (zh)
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刘洋
敖日格力
叶怀宇
张国旗
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深圳第三代半导体研究院
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Publication of WO2021088187A1 publication Critical patent/WO2021088187A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2853Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2886Features relating to contacting the IC under test, e.g. probe heads; chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements

Definitions

  • the invention designs a crimping device based on a multi-layer PCB board that is easy to detect, and this device can conveniently test the position of the failure subunit of the crimping device.
  • crimped power modules have the advantages of high voltage, large current, low stray inductance, fast switching speed, and double-sided heat dissipation. Therefore, crimped power modules have become the mainstream of semiconductor devices in HVDC transmission. select.
  • the crimping type power module uses pressure to connect the sub-units in parallel and crimping together, short-circuit failures often occur during use.
  • all chips are connected in parallel. Once there is a short-circuit inside the chip, the entire device will be damaged. Invalidate.
  • the present invention can realize a crimping power module detection system and a detection method that can be independently controlled and detected inside the power module.
  • a crimping type power module detection system including: crimping type power module, power supply unit, signal acquisition unit, control unit, driving unit, action unit;
  • the crimping type power module includes at least one power module layer, the power module layer includes n*m sub-unit chips, n signal transmission bars for connecting the gates of the sub-unit chips in each row, and the signal transmission bar It includes m-layer stacked integrated signal transmission sub-strips, and each signal transmission sub-strip is used to transmit a signal of a sub-unit chip.
  • control unit is used to send a control signal to the output terminal of the gate control port of the designated sub-unit chip; and determine whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit.
  • the judging whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit is: adopting the driving unit to output at least two different gate driving voltages to the designated sub-unit chip, and judging whether the current of the sub-unit chip is controlled by the gate. Change, if it changes, the sub-unit chip is not short-circuited, if it does not change, the sub-unit chip is short-circuited.
  • the signal acquisition unit is used to collect voltage and current signals through AD signals;
  • the power supply unit is a voltage and current source;
  • the sub-unit chip includes a power chip and an FRD chip, and the power chip includes a MOSFET chip or an IGBT chip .
  • the action unit includes a motor, and the motor removes the faulty sub-unit chip under the control of the control unit.
  • a method for detecting a crimping power module includes:
  • the control unit is used to control the driving unit to output the first driving voltage V C1 to the designated at least one sub-unit chip C xy ; the first collection voltage value V 1 and the first collection of the sub-unit chip under the first driving voltage V C1 are collected Current value I 1 ; 1 ⁇ x ⁇ n, ⁇ 1 ⁇ y ⁇ m;
  • the control unit is used to control the driving unit to output a second driving voltage V C2 that is different from the voltage value of the first driving voltage V C1 to the designated sub-unit chip; the first driving voltage V C2 of the sub-unit chip C xy under the first driving voltage V C2 is collected 2. Collecting the voltage value V 2 and the second collecting current value I 2 ;
  • the S3 judging whether the sub-unit chip C xy has a fault is: if the first collected voltage value V 1 is equal to the second collected voltage value V 2 , the sub-unit chip is short-circuited.
  • the detection method further includes S4: if the sub-unit chip C xy fails, the control unit is used to control the action unit to remove the failed sub-unit chip C xy .
  • the S3 includes: repeating S2T times with T different driving voltages V Cj , correspondingly collecting T j-th collected voltage values V j and j-th collected current values I j , 1 ⁇ j ⁇ T, compare arbitrarily Two j-th collected voltage values V j and any two j-th collected current values I j .
  • the step range of the T different driving voltages V Cj is 0.5-5V, and the time interval for collecting the T j-th collected voltage value V j and the j-th collected current value I j ranges from 20 ns to 200 us. .
  • the crimping power detection module system of the present invention uses a multi-layer signal transmission strip when the gate of the sub-unit chip of the crimping type power module to be detected is led out, and the copper-clad surface of each layer of the external test terminal leaks in sequence.
  • This special The signal transmission bar can realize the drive of the specified chip in the device, and can realize the independent drive of one or more sub-unit chips or the troubleshooting and replacement of the specified one or more sub-unit chips.
  • Figure 1 is a schematic diagram of a crimping power module provided in the first embodiment
  • Figure 2 is a schematic diagram of the crimping power module provided in the first embodiment
  • Fig. 3 is a schematic diagram of the detection system of the crimping power module detection system provided in the first embodiment
  • Fig. 4 is a flow chart of the detection method of the crimping power module detection system provided in the first embodiment
  • This embodiment provides a crimping type power module detection system, as shown in Figs. 1-3.
  • the crimping type power module detection system provided by this embodiment is shown in FIG. 3, and includes: crimping type power module, power supply unit, signal acquisition unit, control unit, driving unit, and action unit.
  • the crimping power module of this embodiment includes a chip, FR4 board, copper block, and copper plate arranged in order from top to bottom, and the upper end cover is separated into two layers; the bottom layer is made of separate copper One piece is embedded in the FR4 board and connected to the collector (C pole) of each chip, and the end cover is covered with an insulating outer frame, and the copper plate is placed on the top layer as the end cover; the gate is led out using a multilayer PCB board, and the external test terminals The copper-clad surface of the multi-layer PCB board leaks out in turn, this special PCB board can realize the drive of the specified chip in the device.
  • the signal transmission strip in the crimping power module provided by this embodiment, which includes five layers of PCB strips with decreasing length from top to bottom bonded together.
  • the preparation method of the signal transmission strip includes: according to the distance between the five sub-unit chips in each row and the outer edge of the power module, cutting five single strips with a length corresponding to the distance one-to-one on the PCB. If the number of sub-unit chips in each row is other, or each signal transmission bar is used to transmit the signal of the sub-unit chips in each column, the number of single PCBs is based on the number of sub-unit chips in each column or row of the press-fit power chip determine.
  • Figure 5 shows the prepared single-layer PCB.
  • the PCB is staggered and bonded by glue, and the connection with the gate signal of the chip and the outermost lead part are leaked during bonding to facilitate the contact of the thimble.
  • Glue can use silicone glue, phenolic resin glue, urea-formaldehyde resin glue, temperature-resistant epoxy glue, polyimide glue, etc.
  • the power supply unit is a voltage and current source, which is used to supply power to the crimping power module; the action unit includes a motor, which is used to replace the faulty sub-unit chip under the control of the control unit.
  • the signal acquisition unit collects the voltage value and current value of the sub-unit chip.
  • the control unit is used to send a control signal to the output terminal of the gate control port of the designated sub-unit chip; and judge whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit. Judging whether the sub-unit chip is faulty is: using the driving unit to output at least two different gate drive voltages to the specified sub-unit chip, and judging whether the current of the sub-unit chip is changed by the gate control, if it changes, the sub-unit chip is not short-circuited, If it does not change, the sub-unit chip is short-circuited.
  • the control unit also controls the motor to remove the faulty sub-unit chip.
  • This embodiment also provides a method for detecting a crimping power module, as shown in FIG. 4.
  • Step 1 Start.
  • Step 2 Control the single-chip microcomputer to output control signals to the gate control port of the designated sub-unit chip.
  • Step 3 The single-chip microcomputer controls the connection port of the collector (C pole) of the corresponding sub-unit chip, and the given voltage is 5V.
  • Step 4 Real-time detection of the voltage and current values of the collector emitter (CE electrode) of the sub-unit chip.
  • Step 5 Adjust the gate drive voltage from 0V to 15V with a step length of 1V and a measurement interval of 200us.
  • Step 6 Determine whether the detected collector-emitter (CE electrode) voltage and current are changed under the control of the grid. If it changes, it means that the sub-unit chip has no short-circuit fault, and the single-chip microcomputer is used to control the measurement of the next set of designated sub-unit chips; if it does not change, it means that the sub-unit chip whose current and voltage has not changed in the above-mentioned sub-unit chip has a short-circuit fault.
  • CE electrode collector-emitter
  • Step 7 Use a single-chip microcomputer to control the motor to remove the sub-unit chip that has a short-circuit fault.
  • the multi-layer signal transmission strip is used when the new product grid of the sub-unit of the crimping power module to be tested is led out, and the copper-clad surface of each layer of the external test terminal leaks in turn.
  • the special signal transmission bar can realize the driving of the specified chip in the device, and can realize the independent driving of one or more sub-unit chips or the troubleshooting and replacement of the specified one or more sub-unit chips.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

A press-fit power module inspection system, comprising: a press-fit power module, a power supply unit, a signal acquisition unit, a control unit, a driving unit, and an action unit. The press-fit power module comprises at least one power module layer; the power module layer comprises n*m sub-unit chips, and n signal transmission strips each used for connecting the gates of a row of the sub-unit chips; the signal transmission strips comprise m layers of stacked integrated signal transmission sub-strips; each signal transmission sub-strip is used for transmitting a signal of one sub-unit chip. The press-fit power module inspection system solves the technical problem of being difficult to independently troubleshoot sub-unit chips in an existing press-fit power module, and can implement independent control and inspection of the sub-unit chips in the power module.

Description

一种压接式功率模块检测系统及检测方法Crimp type power module detection system and detection method 技术领域Technical field
半导体领域,具体涉及电力电子器件的制备Semiconductor field, specifically related to the preparation of power electronic devices
背景技术Background technique
本发明设计一种基于多层PCB板便于检测的压接式器件,这种器件可以方便的测试出压接式器件的失效子单元的位置。The invention designs a crimping device based on a multi-layer PCB board that is easy to detect, and this device can conveniently test the position of the failure subunit of the crimping device.
在传统的焊接式功率模块内部,线路的杂散参数较大,关断的过程中会产生很大的电压尖峰并伴随着一定的电磁干扰。当电力系统对功率等级提出更高的要求,需要更多的芯片并联时,将进一步增大芯片栅极、发射极、集电极的寄生参数及其差异性,加剧了电压过冲、增大了开关损耗,并导致电流极大的不均衡,从而降低了器件的可靠性。相比于焊接式功率模块,压接式具有高电压、大电流、杂散电感低、开关速度快、可双面散热等优势,因此压接式功率模块已经成为高压直流输电中半导体器件的主流选择。In the traditional welded power module, the stray parameters of the circuit are relatively large, and a large voltage spike will be generated during the shutdown process and accompanied by a certain amount of electromagnetic interference. When the power system puts forward higher requirements for power levels and requires more chips to be connected in parallel, the parasitic parameters of the chip gate, emitter, and collector and their differences will be further increased, and the voltage overshoot will be aggravated. Switching losses, and lead to a great imbalance of the current, thereby reducing the reliability of the device. Compared with welded power modules, crimped power modules have the advantages of high voltage, large current, low stray inductance, fast switching speed, and double-sided heat dissipation. Therefore, crimped power modules have become the mainstream of semiconductor devices in HVDC transmission. select.
而压接式功率模块由于是通过压力将各个子单元并联压接在一起,在使用过程中多发生短路失效,然而传统由于器件是所有芯片一起并联,一旦内部有芯片短路就会导致整个器件的失效。而传统的压接型器件在排除失效芯片时非常困难,需要将各个芯片单独取出进行晶圆级测试,整个测试过程非常繁琐。However, since the crimping type power module uses pressure to connect the sub-units in parallel and crimping together, short-circuit failures often occur during use. However, in the traditional device, all chips are connected in parallel. Once there is a short-circuit inside the chip, the entire device will be damaged. Invalidate. However, it is very difficult for traditional crimping devices to eliminate failed chips, and each chip needs to be taken out separately for wafer-level testing, and the entire testing process is very cumbersome.
发明内容Summary of the invention
为克服现有技术的不足,解决压接式功率模块内部子单元芯片难以单独排除故障的技术问题,本发明可实现功率模块内部可单独控制和检测的压接式功率模块检测系统及检测方法。In order to overcome the shortcomings of the prior art and solve the technical problem that the internal subunit chips of the crimping power module are difficult to independently troubleshoot the fault, the present invention can realize a crimping power module detection system and a detection method that can be independently controlled and detected inside the power module.
一种压接式功率模块检测系统,包括:压接式功率模块,电源单元,信号 采集单元,控制单元,驱动单元,动作单元;A crimping type power module detection system, including: crimping type power module, power supply unit, signal acquisition unit, control unit, driving unit, action unit;
所述压接式功率模块包括至少一层功率模块层,所述功率模块层包括n*m个子单元芯片,n个用于连接每行子单元芯片栅极的信号传输条,所述信号传输条包括m层堆叠集成的信号传输子条,每个信号传输子条用于传输一个子单元芯片的信号。The crimping type power module includes at least one power module layer, the power module layer includes n*m sub-unit chips, n signal transmission bars for connecting the gates of the sub-unit chips in each row, and the signal transmission bar It includes m-layer stacked integrated signal transmission sub-strips, and each signal transmission sub-strip is used to transmit a signal of a sub-unit chip.
优选的,所述控制单元用于对指定子单元芯片栅极控制端口输出端发出控制信号;并根据信号采集单元采集的信号判断子单元芯片是否出现故障。Preferably, the control unit is used to send a control signal to the output terminal of the gate control port of the designated sub-unit chip; and determine whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit.
优选的,所述根据信号采集单元采集的信号判断子单元芯片是否出现故障为:采用驱动单元向指定子单元芯片输出至少两个不同的栅极驱动电压,判断子单元芯片电流是否受栅极控制变化,若变化,泽子单元芯片未短路,若不变化,则子单元芯片短路。Preferably, the judging whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit is: adopting the driving unit to output at least two different gate driving voltages to the designated sub-unit chip, and judging whether the current of the sub-unit chip is controlled by the gate. Change, if it changes, the sub-unit chip is not short-circuited, if it does not change, the sub-unit chip is short-circuited.
优选的,所述信号采集单元用于通过AD信号采集电压于电流信号;所述电源单元为电压电流源;所述子单元芯片包括功率芯片及FRD芯片,所述功率芯片包括MOSFET芯片或IGBT芯片。Preferably, the signal acquisition unit is used to collect voltage and current signals through AD signals; the power supply unit is a voltage and current source; the sub-unit chip includes a power chip and an FRD chip, and the power chip includes a MOSFET chip or an IGBT chip .
优选的,所述动作单元包括电机,所述电机在控制单元的控制下移除故障子单元芯片。Preferably, the action unit includes a motor, and the motor removes the faulty sub-unit chip under the control of the control unit.
一种压接式功率模块检测方法,包括:A method for detecting a crimping power module includes:
S1:采用控制单元控制驱动单元向指定至少一个子单元芯片C xy输出第一驱动电压V C1;采集子单元芯片在第一驱动电压V C1下的的第一采集电压值V 1和第一采集电流值I 1;1<x<n,<1<y<m; S1: The control unit is used to control the driving unit to output the first driving voltage V C1 to the designated at least one sub-unit chip C xy ; the first collection voltage value V 1 and the first collection of the sub-unit chip under the first driving voltage V C1 are collected Current value I 1 ; 1<x<n, <1<y<m;
S2:采用控制单元控制驱动单元向指定子单元芯片输出与第一驱动电压V C1的电压值不同的第二驱动电压V C2;采集子单元芯片C xy在第一驱动电压V C2下的的第二采集电压值V 2和第二采集电流值I 2S2: The control unit is used to control the driving unit to output a second driving voltage V C2 that is different from the voltage value of the first driving voltage V C1 to the designated sub-unit chip; the first driving voltage V C2 of the sub-unit chip C xy under the first driving voltage V C2 is collected 2. Collecting the voltage value V 2 and the second collecting current value I 2 ;
S3:比较第一采集电压值V 1与第二采集电压值V 2,以及第一采集电流值I 1与第二采集电流值I 2,判断子单元芯片C xy是否出现故障。 S3: Compare the first collected voltage value V 1 with the second collected voltage value V 2 , and the first collected current value I 1 with the second collected current value I 2 , and judge whether the sub-unit chip C xy is faulty.
优选的,所述S3判断子单元芯片C xy是否出现故障为:若第一采集电压值V 1与第二采集电压值V 2相等则子单元芯片短路。 Preferably, the S3 judging whether the sub-unit chip C xy has a fault is: if the first collected voltage value V 1 is equal to the second collected voltage value V 2 , the sub-unit chip is short-circuited.
优选的,所述检测方法还包括S4:若子单元芯片C xy出现故障,采用控制单元控制动作单元移除出现故障子单元芯片C xyPreferably, the detection method further includes S4: if the sub-unit chip C xy fails, the control unit is used to control the action unit to remove the failed sub-unit chip C xy .
优选的,所述S3包括:采用T个不相同的驱动电压V Cj重复S2T次,对应采集T个第j采集电压值V j和第j采集电流值I j,1<j<T,比较任意两个第j采集电压值V j和任意两个第j采集电流值I jPreferably, the S3 includes: repeating S2T times with T different driving voltages V Cj , correspondingly collecting T j-th collected voltage values V j and j-th collected current values I j , 1<j<T, compare arbitrarily Two j-th collected voltage values V j and any two j-th collected current values I j .
优选的,所述T个不相同的驱动电压V Cj步长范围为0.5-5V,所述采集T个第j采集电压值V j和第j采集电流值I j的时间间隔范围为20ns-200us。 Preferably, the step range of the T different driving voltages V Cj is 0.5-5V, and the time interval for collecting the T j-th collected voltage value V j and the j-th collected current value I j ranges from 20 ns to 200 us. .
本发明的压接功率检测模块系统,在待检测压接式功率模块的子单元芯片栅极引出时使用多层信号传输条,在外接测试端各层板的覆铜面依次漏出,这种特殊的信号传输条可以实现器件内指定芯片的驱动,可实现单独驱动指定一个或多个子单元芯片或针对指定的一个或多个子单元芯片进行故障排查和更换。The crimping power detection module system of the present invention uses a multi-layer signal transmission strip when the gate of the sub-unit chip of the crimping type power module to be detected is led out, and the copper-clad surface of each layer of the external test terminal leaks in sequence. This special The signal transmission bar can realize the drive of the specified chip in the device, and can realize the independent drive of one or more sub-unit chips or the troubleshooting and replacement of the specified one or more sub-unit chips.
附图说明Description of the drawings
图1为实施例一提供的压接式功率模块的示意图Figure 1 is a schematic diagram of a crimping power module provided in the first embodiment
图2为实施例一提供的压接式功率模块的示意图Figure 2 is a schematic diagram of the crimping power module provided in the first embodiment
图3为实施例一提供的压接式功率模块检测系统检测系统的示意图Fig. 3 is a schematic diagram of the detection system of the crimping power module detection system provided in the first embodiment
图4为实施例一提供的压接式功率模块检测系统检测方法流程图Fig. 4 is a flow chart of the detection method of the crimping power module detection system provided in the first embodiment
具体实施方式Detailed ways
下面详细说明本发明的具体实施,有必要在此指出的是,以下实施只是用 于本发明的进一步说明,不能理解为对本发明保护范围的限制,该领域技术熟练人员根据上述本发明内容对本发明做出的一些非本质的改进和调整,仍然属于本发明的保护范围。The specific implementation of the present invention is described in detail below. It is necessary to point out that the following implementation is only used for further description of the present invention, and should not be understood as a limitation of the scope of protection of the present invention. Those skilled in the art will discuss the present invention based on the above-mentioned content of the present invention. Some non-essential improvements and adjustments made still belong to the protection scope of the present invention.
实施例一Example one
本实施例提供一种压接式功率模块检测系统,如图1-3所示。This embodiment provides a crimping type power module detection system, as shown in Figs. 1-3.
本实施例提供的压接式功率模块检测系统如图3所示,包括:压接式功率模块,电源单元,信号采集单元,控制单元,驱动单元,动作单元。The crimping type power module detection system provided by this embodiment is shown in FIG. 3, and includes: crimping type power module, power supply unit, signal acquisition unit, control unit, driving unit, and action unit.
如图1所示,本实施例的压接式功率模块,其包括自上而下依次设置的芯片、FR4板、铜块、铜板,将上端盖分离成两层;底下一层用单独的铜块嵌入FR4板中与各个芯片的集电极(C极)相连,且端盖上套有绝缘外框,铜板作为端盖置于顶层;栅极的引出使用多层PCB板,在外接测试端各层PCB板的覆铜面依次漏出,这种特殊的PCB板可以实现器件内指定芯片的驱动。As shown in Figure 1, the crimping power module of this embodiment includes a chip, FR4 board, copper block, and copper plate arranged in order from top to bottom, and the upper end cover is separated into two layers; the bottom layer is made of separate copper One piece is embedded in the FR4 board and connected to the collector (C pole) of each chip, and the end cover is covered with an insulating outer frame, and the copper plate is placed on the top layer as the end cover; the gate is led out using a multilayer PCB board, and the external test terminals The copper-clad surface of the multi-layer PCB board leaks out in turn, this special PCB board can realize the drive of the specified chip in the device.
如图2所示,是本实施例提供的压接式功率模块中的信号传输条,包括五层由上至下长度递减的PCB条粘接而成。信号传输条的制备方法包括:根据每行五个子单元芯片到功率模块外边沿的距离,在PCB上裁剪五个与距离一一对应的长度的单条。若每行子单元芯片数量为其他数量,或每一个信号传输条用于传输每列的子单元芯片的信号,则PCB单条的数量根据压接式功率芯片的每列或行的子单元芯片数量确定。如图5所示为制备的单层的PCB。通过胶水将PCB错开粘接,粘接时把与芯片栅极信号相连处和最外侧引出部分漏出,便于顶针接触。胶水可使用有机硅类胶、酚醛树脂胶、脲醛树脂胶、耐温环氧胶、聚酰亚胺胶等。As shown in FIG. 2, it is the signal transmission strip in the crimping power module provided by this embodiment, which includes five layers of PCB strips with decreasing length from top to bottom bonded together. The preparation method of the signal transmission strip includes: according to the distance between the five sub-unit chips in each row and the outer edge of the power module, cutting five single strips with a length corresponding to the distance one-to-one on the PCB. If the number of sub-unit chips in each row is other, or each signal transmission bar is used to transmit the signal of the sub-unit chips in each column, the number of single PCBs is based on the number of sub-unit chips in each column or row of the press-fit power chip determine. Figure 5 shows the prepared single-layer PCB. The PCB is staggered and bonded by glue, and the connection with the gate signal of the chip and the outermost lead part are leaked during bonding to facilitate the contact of the thimble. Glue can use silicone glue, phenolic resin glue, urea-formaldehyde resin glue, temperature-resistant epoxy glue, polyimide glue, etc.
电源单元为电压电流源,用于向压接式功率模块提电;动作单元包括电机,用于在控制单元的控制下更换故障子单元芯片。The power supply unit is a voltage and current source, which is used to supply power to the crimping power module; the action unit includes a motor, which is used to replace the faulty sub-unit chip under the control of the control unit.
信号采集单元采集的用于采集子单元芯片的电压值及电流值。The signal acquisition unit collects the voltage value and current value of the sub-unit chip.
控制单元用于对指定子单元芯片栅极控制端口输出端发出控制信号;并根 据信号采集单元采集的信号判断子单元芯片是否出现故障。判断子单元芯片是否出现故障为:采用驱动单元向指定子单元芯片输出至少两个不同的栅极驱动电压,判断子单元芯片电流是否受栅极控制变化,若变化,则子单元芯片未短路,若不变化,则子单元芯片短路。控制单元还控制所述电机移除故障子单元芯片。The control unit is used to send a control signal to the output terminal of the gate control port of the designated sub-unit chip; and judge whether the sub-unit chip is faulty according to the signal collected by the signal acquisition unit. Judging whether the sub-unit chip is faulty is: using the driving unit to output at least two different gate drive voltages to the specified sub-unit chip, and judging whether the current of the sub-unit chip is changed by the gate control, if it changes, the sub-unit chip is not short-circuited, If it does not change, the sub-unit chip is short-circuited. The control unit also controls the motor to remove the faulty sub-unit chip.
本实施例还提供一种压接式功率模块检测方法,如图4所示。This embodiment also provides a method for detecting a crimping power module, as shown in FIG. 4.
步骤1:开始。Step 1: Start.
步骤2:控制单片机对指定子单元芯片栅极控制端口输出控制信号。Step 2: Control the single-chip microcomputer to output control signals to the gate control port of the designated sub-unit chip.
步骤3:单片机控制接入对应子单元芯片的集电极(C极)接线端口,给定电压5V。Step 3: The single-chip microcomputer controls the connection port of the collector (C pole) of the corresponding sub-unit chip, and the given voltage is 5V.
步骤4:实时检测子单元芯片集电极发射极(CE极)的电压电流值。Step 4: Real-time detection of the voltage and current values of the collector emitter (CE electrode) of the sub-unit chip.
步骤5:栅极驱动电压从0V调整到15V,步长1V,测量间隔200us。Step 5: Adjust the gate drive voltage from 0V to 15V with a step length of 1V and a measurement interval of 200us.
步骤6:判断检测的集电极发射极(CE极)电压与电流是否受栅极控制而变化。若变化,则说明该子单元芯片无短路故障,采用单片机控制测量下一组指定的子单元芯片;若不变化,则说明上述子单元芯片中电流电压未变化的子单元芯片出现短路故障。Step 6: Determine whether the detected collector-emitter (CE electrode) voltage and current are changed under the control of the grid. If it changes, it means that the sub-unit chip has no short-circuit fault, and the single-chip microcomputer is used to control the measurement of the next set of designated sub-unit chips; if it does not change, it means that the sub-unit chip whose current and voltage has not changed in the above-mentioned sub-unit chip has a short-circuit fault.
步骤7:采用单片机控制电机移除出现短路故障的子单元芯片。Step 7: Use a single-chip microcomputer to control the motor to remove the sub-unit chip that has a short-circuit fault.
本实施例的压接功率检测模块系统,在待检测压接式功率模块的子单元新品栅极引出时使用多层信号传输条,在外接测试端各层板的覆铜面依次漏出,这种特殊的信号传输条可以实现器件内指定芯片的驱动,可实现单独驱动指定一个或多个子单元芯片或针对指定的一个或多个子单元芯片进行故障排查和更换。In the crimping power detection module system of this embodiment, the multi-layer signal transmission strip is used when the new product grid of the sub-unit of the crimping power module to be tested is led out, and the copper-clad surface of each layer of the external test terminal leaks in turn. The special signal transmission bar can realize the driving of the specified chip in the device, and can realize the independent driving of one or more sub-unit chips or the troubleshooting and replacement of the specified one or more sub-unit chips.
尽管为了说明的目的,已描述了本发明的示例性实施方式,但是本领域的技术人员将理解,不脱离所附权利要求中公开的发明的范围和精神的情况下, 可以在形式和细节上进行各种修改、添加和替换等的改变,而所有这些改变都应属于本发明所附权利要求的保护范围,并且本发明要求保护的产品各个部门和方法中的各个步骤,可以以任意组合的形式组合在一起。因此,对本发明中所公开的实施方式的描述并非为了限制本发明的范围,而是用于描述本发明。相应地,本发明的范围不受以上实施方式的限制,而是由权利要求或其等同物进行限定。Although the exemplary embodiments of the present invention have been described for illustrative purposes, those skilled in the art will understand that they can be modified in form and details without departing from the scope and spirit of the invention disclosed in the appended claims. Various modifications, additions, substitutions, etc. are made, and all these changes shall fall within the protection scope of the appended claims of the present invention, and the various steps in the various departments and methods of the products claimed by the present invention can be combined in any combination. Forms are combined together. Therefore, the description of the embodiments disclosed in the present invention is not intended to limit the scope of the present invention, but to describe the present invention. Accordingly, the scope of the present invention is not limited by the above embodiments, but is defined by the claims or their equivalents.

Claims (10)

  1. 一种压接式功率模块检测系统,其特征在于,包括:压接式功率模块,电源单元,信号采集单元,控制单元,驱动单元,动作单元;A crimping type power module detection system, which is characterized by comprising: crimping type power module, power supply unit, signal acquisition unit, control unit, driving unit, and action unit;
    所述压接式功率模块包括至少一层功率模块层,所述功率模块层包括n*m个子单元芯片,n个用于连接每行子单元芯片栅极的信号传输条,所述信号传输条包括m层堆叠集成的信号传输子条,每个信号传输子条用于传输一个子单元芯片的信号。The crimping type power module includes at least one power module layer, the power module layer includes n*m sub-unit chips, n signal transmission bars for connecting the gates of the sub-unit chips in each row, and the signal transmission bar It includes m-layer stacked integrated signal transmission sub-strips, and each signal transmission sub-strip is used to transmit a signal of a sub-unit chip.
  2. 根据权利要求1所述的压接式功率模块检测系统,其特征在于,所述控制单元用于对指定子单元芯片栅极控制端口输出端发出控制信号;并根据信号采集单元采集的信号判断子单元芯片是否出现故障。The crimping power module detection system according to claim 1, wherein the control unit is used to send a control signal to the output terminal of the gate control port of the specified sub-unit chip; and determine the sub-unit according to the signal collected by the signal collection unit Whether the unit chip is faulty.
  3. 根据权利要求2所述的压接式功率模块检测系统,其特征在于,所述根据信号采集单元采集的信号判断子单元芯片是否出现故障为:采用驱动单元向指定子单元芯片输出至少两个不同的栅极驱动电压,判断子单元芯片电流是否受栅极控制变化,若变化,泽子单元芯片未短路,若不变化,则子单元芯片短路。The crimping power module detection system according to claim 2, wherein the judging whether the sub-unit chip is faulty according to the signal collected by the signal collecting unit is: using the driving unit to output at least two different types of chips to the specified sub-unit chip. To determine whether the current of the sub-unit chip is changed by the gate control, if it changes, the sub-unit chip is not short-circuited, if it does not change, the sub-unit chip is short-circuited.
  4. 根据权利要求1所述的压接式功率模块检测系统,其特征在于,所述信号采集单元用于通过AD信号采集电压于电流信号;所述电源单元为电压电流源;所述子单元芯片包括功率芯片及FRD芯片,所述功率芯片包括MOSFET芯片或IGBT芯片。The crimp-type power module detection system according to claim 1, wherein the signal acquisition unit is used to collect voltage and current signals through AD signals; the power supply unit is a voltage and current source; and the sub-unit chip includes Power chips and FRD chips. The power chips include MOSFET chips or IGBT chips.
  5. 根据权利要求1所述的压接式功率模块检测系统,其特征在于,所述动作单元包括电机,所述电机在控制单元的控制下移除故障子单元芯片。The crimping type power module detection system according to claim 1, wherein the action unit comprises a motor, and the motor removes the faulty sub-unit chip under the control of the control unit.
  6. 一种采用如权利要求1-5所述的压接式功率模块检测系统的压接式功率模块检测方法,其特征在于,包括:A crimp-type power module detection method using the crimp-type power module detection system according to claims 1-5, characterized in that it comprises:
    S1:采用控制单元控制驱动单元向指定至少一个子单元芯片C xy输出第一驱 动电压V C1;采集子单元芯片在第一驱动电压V C1下的的第一采集电压值V 1和第一采集电流值I 1;1<x<n,<1<y<m; S1: The control unit is used to control the driving unit to output the first driving voltage V C1 to the designated at least one sub-unit chip C xy ; the first collection voltage value V 1 and the first collection of the sub-unit chip under the first driving voltage V C1 are collected Current value I 1 ; 1<x<n, <1<y<m;
    S2:采用控制单元控制驱动单元向指定子单元芯片输出与第一驱动电压V C1的电压值不同的第二驱动电压V C2;采集子单元芯片C xy在第一驱动电压V C2下的的第二采集电压值V 2和第二采集电流值I 2S2: The control unit is used to control the driving unit to output a second driving voltage V C2 that is different from the voltage value of the first driving voltage V C1 to the designated sub-unit chip; the first driving voltage V C2 of the sub-unit chip C xy under the first driving voltage V C2 is collected 2. Collecting the voltage value V 2 and the second collecting current value I 2 ;
    S3:比较第一采集电压值V 1与第二采集电压值V 2,以及第一采集电流值I 1与第二采集电流值I 2,判断子单元芯片C xy是否出现故障。 S3: Compare the first collected voltage value V 1 with the second collected voltage value V 2 , and the first collected current value I 1 with the second collected current value I 2 , and judge whether the sub-unit chip C xy is faulty.
  7. 根据权利要求6所述的压接式功率模块检测方法,其特征在于,所述S3判断子单元芯片C xy是否出现故障为:若第一采集电压值V 1与第二采集电压值V 2相等则子单元芯片短路。 The crimping type power module detection method according to claim 6, wherein the S3 judging whether the sub-unit chip C xy has a fault is: if the first collected voltage value V 1 is equal to the second collected voltage value V 2 Then the sub-unit chip is short-circuited.
  8. 根据权利要求6所述的压接式功率模块检测方法,其特征在于,所述检测方法还包括S4:若子单元芯片C xy出现故障,采用控制单元控制动作单元移除出现故障子单元芯片C xyThe crimping type power module detection method according to claim 6, characterized in that the detection method further comprises S4: if the sub-unit chip C xy fails, the control unit is used to control the action unit to remove the failed sub-unit chip C xy .
  9. 根据权利要求6所述的压接式功率模块检测方法,其特征在于,所述S3包括:采用T个不相同的驱动电压V Cj重复S2T次,对应采集T个第j采集电压值V j和第j采集电流值I j,1<j<T,比较任意两个第j采集电压值V j和任意两个第j采集电流值I jThe crimping type power module detection method according to claim 6, wherein the S3 comprises: using T different driving voltages V Cj to repeat S2T times, correspondingly collecting T j-th collected voltage values V j and The j-th collected current value I j , 1<j<T, compare any two j-th collected voltage values V j and any two j-th collected current values I j .
  10. 根据权利要求9所述的压接式功率模块检测方法,其特征在于,所述T个不相同的驱动电压V Cj步长范围为0.5-5V,所述采集T个第j采集电压值V j和第j采集电流值I j的时间间隔范围为20ns-200us。 The crimping type power module detection method according to claim 9, wherein the step range of the T different driving voltages V Cj is 0.5-5V, and the collected T j-th collected voltage values V j The time interval between and the j-th collected current value I j ranges from 20ns to 200us.
PCT/CN2019/123834 2019-11-05 2019-12-06 Press-fit power module inspection system and inspection method WO2021088187A1 (en)

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