CN219266454U

CN219266454U - Semiconductor discrete device reliability test circuit

Info

Publication number: CN219266454U
Application number: CN202223365528.8U
Authority: CN
Inventors: 袁锟; 王明康; 潘朋涛; 罗健明; 邓丹; 李珏; 杨超平
Original assignee: China Zhenhua Group Yongguang Electronics Coltd
Current assignee: China Zhenhua Group Yongguang Electronics Coltd
Priority date: 2022-12-15
Filing date: 2022-12-15
Publication date: 2023-06-27
Anticipated expiration: 2032-12-15

Abstract

A semiconductor discrete device reliability test circuit belongs to the field of semiconductor discrete devices. Comprising the following steps: positive power supply, negative power supply (including ground), positive constant current module, negative constant current module, positive conduction module, reverse conduction module, positive display module, reverse display module, circuit module. The positive power supply is connected with the positive electrode of the positive constant current module and the negative electrode of the reverse conduction module, the negative electrode of the positive constant current module is connected with the positive electrode of the positive display module, and the negative electrode of the positive display module is connected with the positive end of the reverse conduction module and the connecting end set by the circuit module; the other connecting end set by the circuit module is connected with the positive end of the forward conduction module and the negative electrode of the reverse display module, the positive electrode of the reverse display module is connected with the negative electrode of the reverse constant current module, and the negative end of the forward conduction module is connected with the positive electrode of the reverse constant current module and the negative power supply. Solves the reliability problem caused by adopting a protective tube in the prior high-temperature reverse bias aging. The method is widely applied to the field of high-temperature reverse bias aging of semiconductor discrete devices.

Description

Semiconductor discrete device reliability test circuit

Technical Field

The utility model belongs to the field of semiconductor discrete devices, and further relates to the field of semiconductor discrete device testing, in particular to a semiconductor discrete device reliability test circuit.

Background

At present, a fuse tube is generally adopted in a high-temperature reverse bias aging process of a semiconductor discrete device to protect an aging circuit, and the protection principle is that when the semiconductor discrete device in the aging circuit is abnormal, a large current fuses the fuse tube to protect the device from further damage.

The defects of the prior art are mainly as follows:

a. the reaction speed is slow: the fuse takes some time for energy to accumulate to blow, during which time a large current is drawn through the semiconductor device, and excessive current can further damage the device.

b. The efficiency is low: before each ageing, each fuse tube needs to be detected separately to ensure that the fuse tube does not fail.

c. The reliability is poor: the electrifying capability of the fuse tube is reduced after the fuse tube is used for a long time, and the fuse is fused in a normal state in the aging process, so that the semiconductor device cannot be aged for a whole period of time, and invalid aging is caused.

d. No self-checking capability: after the semiconductor device is accessed, the risk of virtual contact exists in a circuit before the burn-in of the upper machine, and the semiconductor device is required to be checked in special burn-in equipment, so that the operation is complex and the equipment requirement is high.

e. No self-protection capability: there is a risk of abnormality of the power supply apparatus or misoperation of the operator. When the power supply equipment is abnormal or an operator operates by mistake (such as excessively high voltage input), excessive current can enter the semiconductor device through the fuse tube, and no matter the fuse tube is fused, the semiconductor device can be damaged or burnt.

In view of this, the present utility model has been made.

Disclosure of Invention

The technical problems to be solved by the utility model are as follows: the problem of process reliability caused by the fact that an aging circuit is protected by a fuse tube in the existing high-temperature reverse bias aging process of the semiconductor discrete device is solved.

The design concept of the utility model is as follows: designing a device burn-in circuit module according to the characteristics of the semiconductor discrete device; a constant current limiting circuit is arranged in a connecting passage between the device aging circuit module and a power supply to replace a traditional protective tube, so that the reaction speed is improved; setting a device aging state display circuit in a connecting passage of the device aging circuit and a power supply, and carrying out different displays according to the quality change state of the device in the aging process, so as to improve the visual monitoring capability of the process, wherein the display comprises sound or visual perception; setting a current flow direction control circuit in a connecting channel between the device aging circuit and a power supply, and performing aging test on each direction function of the bidirectional or multidirectional device; the device aging circuit module is connected between a positive power supply and a negative power supply (including ground) in a polarity symmetry manner through the constant current limiting circuit and the device aging condition display circuit, and the direction of current flowing through the device can be changed through polarity exchange of the power supply.

To this end, the present utility model provides a semiconductor discrete device reliability test circuit, as shown in fig. 1. Comprising the following steps: positive power supply, negative power supply (including ground), positive constant current module, negative constant current module, positive conduction module, reverse conduction module, positive display module, reverse display module, circuit module (including device to be tested).

The positive power supply is connected with the positive electrode of the positive constant current module, the negative electrode of the positive constant current module is connected with the positive electrode of the positive display module, and the negative electrode of the positive display module is connected with the connecting end set by the circuit module.

The positive power supply is connected with the negative end of the reverse conduction module, and the positive end of the reverse conduction module is connected with the negative end of the positive display module.

The negative power supply is connected with the positive electrode of the reverse constant current module, the negative electrode of the reverse constant current module is connected with the positive electrode of the reverse display module, and the negative electrode of the reverse display module is connected with the connecting end set by the circuit module.

The negative power supply is connected with the negative end of the positive conduction module, and the positive end of the positive conduction module is connected with the negative end of the reverse display module.

The negative power supply and the positive power supply can be exchanged according to the bidirectional polarity of the device to be tested.

The utility model has the following technical effects:

(1) The reaction speed of the current exceeding the rated current is improved: the response speed is determined by the response speed of the constant current module, the circuit protection response time can be improved to ns level, and no delay is realized.

(2) Possesses self-checking ability, raises the efficiency simultaneously: after the power is on, whether the circuit works normally or not is judged by the display state of the display module, and whether the circuit has the problems of virtual welding, virtual contact and the like is judged.

(3) Reliability is improved: the whole circuit has no fuse, and the risk of ineffective aging caused by the aging of the fuse is avoided.

(4) The self-protection capability is provided: by adopting the constant current design technology, when the voltage is too high due to misoperation, the constant current protection work is performed, so that no large current passes through the semiconductor device, and the semiconductor device is protected from damage.

(5) The constant current module has a fault tolerance function, and when equipment is abnormal or an operator operates by mistake, the protection function of the constant current module is started, so that devices in the circuit are protected from being damaged or burnt due to overhigh voltage.

(6) The aging process can be intuitively monitored, whether the aging state of the device is normal or not can be judged directly through the display state of the display module in the aging process, and the aging process is easy to monitor in real time.

The utility model has the technical effects that:

the utility model is applied to the technical field of high-temperature reverse bias aging screening of semiconductor discrete devices (such as TVS arrays, diodes, triodes, MOSFETs, IGBTs and the like).

Drawings

FIG. 1 is a schematic block diagram of a reliability test.

FIG. 2 is a schematic diagram of unidirectional current flow in a cell circuit.

FIG. 3 is a schematic diagram of a bi-directional current flow of a cell circuit.

Fig. 4 is a schematic diagram of unidirectional current flow through a unidirectional TVS array.

Fig. 5 is a schematic diagram of bidirectional current flow in a bidirectional TVS array.

Fig. 6 is a schematic diagram of a unidirectional transient voltage suppression diode high temperature reverse bias test structure.

Fig. 7 is a schematic diagram of a high-temperature reverse bias test structure of the bi-directional transient voltage suppression diode.

Fig. 8 is a schematic diagram of a high temperature reverse bias test structure of a MOSFET tube.

Fig. 9 is a schematic diagram of a high-temperature reverse bias test structure of an IGBT tube.

Fig. 10 is a schematic diagram of a high-temperature reverse bias test structure of a triode.

Detailed Description

As shown in fig. 1-10, taking a unidirectional transient voltage suppression diode, a bidirectional transient voltage suppression diode, a unidirectional TVS array, a bidirectional TVS array, a MOSFET tube, an IGBT tube, and a triode as an example, a circuit design method and a circuit for testing reliability of a semiconductor discrete device are provided, and specific embodiments thereof are as follows:

the positive power supply is a direct current power supply VCC, the negative power supply is grounded GND, the positive constant current module and the negative constant current module adopt constant current diodes, the positive conduction module and the negative conduction module adopt rectifier diodes, the positive display module and the negative display module adopt LED luminous electrode tubes, and the circuit module is a relevant connecting wire, a device clamp to be tested and a device to be tested.

As shown in fig. 2, the positive electrode of the constant current diode Q1 is connected with the negative electrode of the rectifying diode D1 and the Port1 end of the unit circuit, the negative electrode of the constant current diode Q1 is connected with the positive electrode of the LED light-emitting electrode tube D3, and the negative electrode of the LED light-emitting electrode tube D3 is connected with the positive electrode of the rectifying diode D1 and one end of the device to be tested; the other end of the device to be tested is connected with the anode of the rectifying diode D2 and the cathode of the LED luminous electrode tube D4, the anode of the LED luminous electrode tube D4 is connected with the cathode of the constant current diode Q2, and the anode of the constant current diode Q2 is connected with the cathode of the rectifying diode D2 and the Port2 end of the unit circuit.

As shown in fig. 3, when Port1 of the unit circuit is connected to the positive power VCC and Port2 is connected to the ground, the current flows from left to right; when Port2 of the unit circuit is connected to the positive power supply VCC and Port1 is grounded, current flows from right to left. The switching of the over-power interface can realize the conversion of the current direction.

The same circuit connection principle:

as shown in fig. 4, a unidirectional current flow diagram of the 4-way unidirectional TVS array is shown. For the high-temperature reverse bias test of the unidirectional TVS array, 4 unit circuits are connected in parallel, so that the high-temperature reverse bias test of the 4-way unidirectional TVS array can be realized.

As shown in fig. 5, a bidirectional current flow diagram of a 4-way bidirectional TVS array is shown. For the high-temperature reverse bias test of the 4-path bidirectional TVS array, 4 unit circuits are connected in parallel, and the high-temperature reverse bias test of the 4-path bidirectional TVS array can be realized by adopting a power polarity switching mode.

Fig. 6 is a schematic diagram of a high-temperature reverse bias test structure of the unidirectional tvs.

Fig. 7 is a schematic diagram of a structure of a high-temperature reverse bias test of the bi-directional tvs.

Fig. 8 is a schematic diagram of a high-temperature reverse bias test structure of a MOSFET.

For the high-temperature reverse bias test of the multi-channel unidirectional array device, a plurality of unit circuits are connected in parallel, so that the high-temperature reverse bias test of the multi-channel unidirectional array device can be realized.

For the high-temperature reverse bias test of the multi-channel bidirectional array device, a plurality of unit circuits are connected in parallel, and the high-temperature reverse bias test of the multi-channel bidirectional array device can be realized by adopting a power polarity switching mode.

Finally, it should be noted that: the above examples are only illustrative and the utility model includes, but is not limited to, the above examples, which need not and cannot be exhaustive of all embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. All embodiments meeting the requirements of the utility model are within the protection scope of the utility model.

Claims

1. A semiconductor discrete device reliability test circuit, comprising: the device comprises a positive power supply, a negative power supply, a positive constant current module, a negative constant current module, a positive conduction module, a reverse conduction module, a positive display module, a reverse display module and a circuit module;

the positive power supply is connected with the positive electrode of the positive constant current module, the negative electrode of the positive constant current module is connected with the positive electrode of the positive display module, and the negative electrode of the positive display module is connected with the connecting end set by the circuit module;

the positive power supply is connected with the negative end of the reverse conduction module, and the positive end of the reverse conduction module is connected with the negative end of the positive display module;

the negative power supply is connected with the positive electrode of the reverse constant current module, the negative electrode of the reverse constant current module is connected with the positive electrode of the reverse display module, and the negative electrode of the reverse display module is connected with the connecting end set by the circuit module;

the negative power supply is connected with the negative end of the positive conduction module, and the positive end of the positive conduction module is connected with the negative end of the reverse display module;

the negative power supply and the positive power supply can be exchanged according to the bidirectional polarity of the device to be tested;

the circuit module comprises a device to be tested.

2. A semiconductor discrete device reliability test circuit as claimed in claim 1, wherein said positive power supply is a dc power supply and said negative power supply is grounded.

3. The semiconductor discrete device reliability test circuit of claim 1, wherein the positive constant current module and the negative constant current module employ constant current diodes.

4. A semiconductor discrete device reliability test circuit as claimed in claim 1, wherein said forward conduction module and reverse conduction module employ rectifier diodes.

5. A semiconductor discrete device reliability test circuit as claimed in claim 1, wherein said circuit modules are associated bond wires, device under test fixtures and devices under test.

6. The semiconductor discrete device reliability test circuit of claim 1, wherein the specific circuit is:

the positive electrode of the constant current diode Q1 is connected with the negative electrode of the rectifying diode D1 and the Port1 end of the unit circuit, the negative electrode of the constant current diode Q1 is connected with the positive electrode of the LED luminous electrode tube D3, and the negative electrode of the LED luminous electrode tube D3 is connected with the positive electrode of the rectifying diode D1 and one end of a device to be tested; the other end of the device to be tested is connected with the anode of the rectifying diode D2 and the cathode of the LED luminous electrode tube D4, the anode of the LED luminous electrode tube D4 is connected with the cathode of the constant current diode Q2, and the anode of the constant current diode Q2 is connected with the cathode of the rectifying diode D2 and the Port2 end of the unit circuit.

7. The circuit for testing the reliability of the discrete semiconductor device according to claim 1, wherein for the high-temperature reverse bias test of the multi-path unidirectional array device, the high-temperature reverse bias test of the multi-path unidirectional array device can be realized by connecting a plurality of unit circuits in parallel.

8. The circuit for testing the reliability of the semiconductor discrete device according to claim 1, wherein for the high-temperature reverse bias test of the multi-path bidirectional array device, a plurality of unit circuits are connected in parallel, and the high-temperature reverse bias test of the multi-path bidirectional array device can be realized by adopting a power polarity switching mode.

9. A semiconductor discrete device reliability test circuit as claimed in claim 1, wherein said device under test is: unidirectional transient voltage suppression diodes, bidirectional transient voltage suppression diodes, unidirectional TVS arrays, bidirectional TVS arrays, MOSFET tubes, IGBT tubes, or transistors.