CN209182444U - A kind of universal compression joint type IGBT power modules testboard - Google Patents
A kind of universal compression joint type IGBT power modules testboard Download PDFInfo
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- CN209182444U CN209182444U CN201821797580.1U CN201821797580U CN209182444U CN 209182444 U CN209182444 U CN 209182444U CN 201821797580 U CN201821797580 U CN 201821797580U CN 209182444 U CN209182444 U CN 209182444U
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Abstract
The utility model discloses a kind of universal compression joint type IGBT power modules testboards, including power circuit, DSP control circuit, heater circuit and data acquisition and analysis system, the power circuit is by direct-current switch power supply, storage capacitor, equalizing resistance, charge and discharge control plate, current-limiting resistance, stack bus bar and IGBT device under test composition, the utility model is scientific and reasonable for structure, it is safe and convenient to use, using the test method for adding driving pulse in IGBT gate pole, the adjusting means environment temperature in the way of self-heating, single or multiple IGBT components can be moved simultaneously, static parameter test, the major parameter of test has: IGBT parasitic inductance, power circuit stray inductance, IGBT switch time, di/dt, du/dt, devices switch loss, realize test equipment safety, side Just integration operation, the equipment are suitable for railway locomotive traction convertor, wind-power electricity generation, photovoltaic power generation, flexible direct current transmission converter valve, the dynamic and static characteristic test of medium-high voltage frequency converter valve group IGBT unit.
Description
Technical field
The utility model relates to IGBT power modules the field of test technology, specially a kind of universal compression joint type IGBT power
Mould group testboard.
Background technique
1984, B.J.Baliga proposed insulated gate bipolar transistor (Insulated Gate Bipolar
Transistor, IGBT) basic conception, the design of continuing to optimize with scientific worker to IGBT, IGBT gate structure by
Planar gate structure development is trench gate structure, while being also the application for adapting to more large-power occasions, and IGBT is by the vertical of punch
Gate structure development is non-punch and soft penetrating structure, and now, powerful IGBT is widely used to railway locomotive change
Flow device, wind-power electricity generation, photovoltaic power generation, flexible direct current transmission converter valve group, the industrial circles such as medium-high voltage frequency converter.
Traditional IGBT device mainly uses the welding manner of encapsulating, and the IGBT device under such mode is due to radiating, welding
It connects, the techniques limitation such as wire bonding, power grade is not often high;It concurrently there are lead to fall off, layer degeneration etc. is imitated by heat-machine
Device performance should be caused to decline, encapsulation type IGBT device cannot gradually meet the requirements higher power occasion, in order to adapt to it is bigger,
The demand of higher power occasion, novel compression joint type IGBT module inside is using independent sub- module group unit design, including IGBT
Mould group and FRD submodule group, and be mounted in plastic feet with mode according to a specific ratio;Igbt chip is embedded in collector molybdenum sheet
Among transmitting collection molybdenum sheet, surrounding filling has the inert gas of defencive function, makes IGBT collector and hair using external pressure
It penetrates collection molybdenum sheet to better contact with, so that the heat-sinking capability and through-current capability of IGBT device are improved, to meet answering for large-power occasions
With.
With going deep into for compression joint type IGBT application, domestic and foreign scholars expand a large amount of research to the working characteristics of IGBT,
Mainly compression joint type IGBT on, off waveform is parsed, to be extracted to device inside structural characteristic parameter;It is based on
The compression joint type IGBT physical model that semiconductor physics is established, can predict and improve the on, off characteristic of device;Due to pressure
Connect Formulas I GBT modeling and be related to the relevant professional knowledges such as semiconductor physics, the manufacturing process of device, the foundation of physical model compared with
For difficulty;Secondly the working characteristics of compression joint type IGBT is posted with its switching voltage, switching current, gate-drive parameter, commutation circuit
Raw inductance, operating ambient temperature etc. are closely related, and compression joint type IGBT device production firm is provided due to the limitation of test condition
Device data manual information is often not comprehensive enough and accurate, therefore develops an accurate, flexible and convenient compression joint type IGBT test and set
For in railway locomotive current transformer, wind-power electricity generation, photovoltaic power generation, flexible direct current transmission converter valve group, the industry such as medium-high voltage frequency converter
There is biggish use value in field
Utility model content
The utility model provides a kind of universal compression joint type IGBT power modules testboard, can effectively solve above-mentioned background
The problem of being proposed in technology.
To achieve the above object, the utility model provides the following technical solutions: a kind of universal compression joint type IGBT power mould
Group testboard, including power circuit, DSP control circuit, heater circuit and data acquisition and analysis system, the power circuit is by straight
Current switching power supply, storage capacitor, equalizing resistance, charge and discharge control plate, current-limiting resistance, stack bus bar and IGBT device under test group
At the direct-current switch power supply is connect with charging panel, the control panel and capacitance connection, the storage capacitor and IGBT device
Part be connected with each other, when charging voltage reaches test voltage, disconnect charging panel, using the energy stored in storage capacitor into
The test of row IGBT device.
According to the above technical scheme, the equalizing resistance is respectively adopted 3 groups of modes in parallel and is connected in parallel on storage capacitor both ends,
For voltage between balanced energy-storage capacitor.
According to the above technical scheme, the stack bus bar and storage capacitor and power circuit are connected with each other, using upper and lower two
The design method of layer superposition, reduces stray inductance.
According to the above technical scheme, control unit of the DSP control circuit as test macro, for testing IGBT
When voltage, electric current, temperature information carry out sampling analysis, and carry out data exchange with host computer, and using driving unit as carrier,
Switch control signal is provided for tested IGBT device gate pole.
According to the above technical scheme, the heater circuit using water-cooled plate center and surrounding punching by the way of, by power
Heating tube embedment is wherein heated, using temperature control instrument to IGBT device ambient temperature real-time control.
According to the above technical scheme, the data collection system is minimum by oscillograph, host computer Labview software, DSP
The dynamic and static waveform and data parameters of tested IGBT device are analyzed and processed by system board, and are fed back and arrived human-computer interaction circle
Face forms the integration operation that link is analyzed from testing process to data.
Compared with prior art, the utility model has the beneficial effects that the utility model is scientific and reasonable for structure, secure side is used
Just, using the test method for adding driving pulse in IGBT gate pole, the adjusting means environment temperature in the way of self-heating can be simultaneously
Dynamic and static parameter testing is carried out to single or multiple IGBT components, the major parameter of test has: IGBT parasitic inductance, power electricity
The one of test equipment conveniently, safely is realized in road stray inductance, IGBT switch time, di/dt, du/dt, devices switch loss
Change operation, the equipment be suitable for railway locomotive traction convertor, wind-power electricity generation, photovoltaic power generation, flexible direct current transmission converter valve, in
The dynamic and static characteristic test of high-voltage frequency converter valve group IGBT unit.
Detailed description of the invention
Attached drawing is used to provide a further understanding of the present invention, and constitutes part of specification, practical with this
Novel embodiment is used to explain the utility model together, does not constitute limitations of the present invention.
In the accompanying drawings:
Fig. 1 is the power circuit and electric operation control circuit figure of the utility model;
Fig. 2 is the DSP program circuit schematic diagram of the utility model.
Specific embodiment
It is illustrated below in conjunction with preferred embodiment of the attached drawing to the utility model, it should be understood that described herein excellent
It selects embodiment to be only used for describing and explaining the present invention, is not used to limit the utility model.
Embodiment: as shown in Figs. 1-2, the utility model provides technical solution, a kind of universal compression joint type IGBT power mould
Group testboard, including power circuit, DSP control circuit, heater circuit and data acquisition and analysis system, power circuit are opened by direct current
Powered-down source, storage capacitor, equalizing resistance, charge and discharge control plate, current-limiting resistance, stack bus bar and IGBT device under test composition, directly
Current switching power supply is connect with charging panel, control panel and capacitance connection, and storage capacitor and IGBT device are connected with each other, and works as charging
When voltage reaches test voltage, charging panel is disconnected, carries out IGBT device test using the energy stored in storage capacitor.
According to the above technical scheme, equalizing resistance is respectively adopted 3 groups of modes in parallel and is connected in parallel on storage capacitor both ends, is used for
Voltage between balanced energy-storage capacitor.
According to the above technical scheme, stack bus bar and storage capacitor and power circuit are connected with each other, folded using upper layer and lower layer
The design method added reduces stray inductance.
Direct-current switch power supply provides adjustable DC voltage for power circuit, and battery charging and discharging panel plays on-off action, controls function
The voltage and current of rate circuit, current-limiting resistance prevent from flowing through high current in power circuit, accumulation of energy of the energy-storage capacitor as electric energy
Device stores energy, after the tank voltage in capacitor is equal to test voltage, closes direct-current switch power supply, utilizes storage capacitor
The energy of middle storage presses voltage in storage capacitor as test voltage, equalizing resistance, in balanced each storage capacitor
Voltage, driver then provide switch control signal for IGBT gate pole to be measured.
According to the above technical scheme, control unit of the DSP control circuit as test macro, when for testing IGBT
Voltage, electric current, temperature information carry out sampling analysis, and carry out data exchange with host computer, and are quilt using driving unit as carrier
Survey IGBT device gate pole and switch control signal be provided, DSP control circuit and RS232/485 communicating circuit, power circuit, it is automatic/
Manual pulse signal trigger circuit, over-sampling modulate circuit, light pricker signal circuit composition, DSP control circuit carry out control program
Storage, and analysis and algorithm optimization are carried out to sampled data, it is possible to provide ± 15V, 3.3V and 5V accessory power supply, over-sampling modulate circuit
After the analog signals such as voltage, electric current, temperature are converted to digital signal, data processing is carried out to it by DSP control circuit, and
Data processed result is returned into host computer, together with driving unit, the gate pole for IGBT component provides out fiber-optic signal circuit
Close control signal.
According to the above technical scheme, heater circuit heats power using by the way of water-cooled plate center and surrounding punching
Pipe embedment is wherein heated, using temperature control instrument to IGBT device ambient temperature real-time control, using with PID
The temperature measuring device of self-regulation carries out real-time control to temperature signal, makes IGBT device ambient temperature deviation within the scope of ± 1 DEG C.
According to the above technical scheme, data collection system passes through oscillograph, host computer Labview software, DSP minimum system
The dynamic and static waveform and data parameters of tested IGBT device are analyzed and processed by plate, and are fed back and arrived human-computer interaction interface, shape
At the integration operation for analyzing link from testing process to data, led to simultaneously with DSP and oscillograph by Labview software
News, graphically return to host computer for the dynamic and static test waveform and data of IGBT, test content is included in IGBT
Pole adds the method for driving pulse to be tested, test pulse width adjusting range 1us to 1s, tests IGBT component respectively in difference
Dynamic and static state parameters under voltage, electric current, temperature and test pulse width, using high bandwidth oscilloscope acquisition IGBT device open and
The voltage and current waveform of shutdown moment, calculating device maximum voltage spike, current spike, switching loss, safety operation area etc.
Index, and chart data file is converted to, the relevant technologies foundation is provided for IGBT device user.
It is first turned on testboard industrial personal computer, setting test voltage, electric current, temperature instruction are closed after reaching setup parameter
Direct-current switch power supply and charging panel carry out dynamic and static characteristic test to IGBT device at this time, after to be tested, closure
Control of discharge plate discharges power circuit residual voltage, and the dynamic and static characteristic waveforms and data of IGBT are analyzed and handled
After be sent to user interface, automatically generated data table is referred to for measuring technology personnel.
Finally, it should be noted that being not limited to this reality the foregoing is merely the preferred embodiment of the utility model
With novel, although the utility model is described in detail with reference to the foregoing embodiments, come for those skilled in the art
Say, it is still possible to modify the technical solutions described in the foregoing embodiments, or to part of technical characteristic into
Row equivalent replacement.Within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on, should all
It is included within the scope of protection of this utility model.
Claims (6)
1. a kind of universal compression joint type IGBT power modules testboard, including power circuit, DSP control circuit, heater circuit and
Data collection system, it is characterised in that: the power circuit is automatically controlled by direct-current switch power supply, storage capacitor, equalizing resistance, charge and discharge
Making sheet, current-limiting resistance, stack bus bar and IGBT device under test composition, the direct-current switch power supply are connect with charging panel, institute
Control panel and capacitance connection are stated, the storage capacitor and IGBT device are connected with each other, and when charging voltage reaches test voltage, are broken
Charging panel is opened, carries out IGBT device test using the energy stored in storage capacitor.
2. a kind of universal compression joint type IGBT power modules testboard according to claim 1, which is characterized in that described equal
Piezoresistance is respectively adopted 3 groups of modes in parallel and is connected in parallel on storage capacitor both ends, for voltage between balanced energy-storage capacitor.
3. a kind of universal compression joint type IGBT power modules testboard according to claim 1, which is characterized in that described folded
Layer busbar and storage capacitor and power circuit are connected with each other, and the design method being superimposed using upper layer and lower layer reduces stray inductance.
4. a kind of universal compression joint type IGBT power modules testboard according to claim 1, which is characterized in that described
Control unit of the DSP control circuit as test macro, voltage, electric current, temperature information when for testing IGBT are adopted
Sample analysis, and data exchange is carried out with host computer, and using driving unit as carrier, switch control is provided for tested IGBT device gate pole
Signal processed.
5. a kind of universal compression joint type IGBT power modules testboard according to claim 1, which is characterized in that described to add
The embedment of power heating tube is wherein heated using by the way of water-cooled plate center and surrounding punching, utilizes temperature by heater circuit
Control instrument is to IGBT device ambient temperature real-time control.
6. a kind of universal compression joint type IGBT power modules testboard according to claim 1, which is characterized in that the number
According to acquisition system by oscillograph, host computer Labview software, DSP minimum system plate, by the dynamic and static of tested IGBT device
Waveform and data parameters are analyzed and processed, and are fed back and arrived human-computer interaction interface, are formed and are analyzed link from testing process to data
Integration operation.
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Cited By (11)
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CN110426620A (en) * | 2019-09-03 | 2019-11-08 | 广东电网有限责任公司 | A kind of compression joint type IGBT module test macro and test method |
CN110635470A (en) * | 2019-11-11 | 2019-12-31 | 西南交通大学 | Layered control method for flexible medium-voltage direct-current railway power supply system |
CN110850208A (en) * | 2019-11-15 | 2020-02-28 | 浙江大学 | Laminated busbar stray parameter extraction method based on SiC MOSFET frequency characteristics |
CN111537857A (en) * | 2020-04-07 | 2020-08-14 | 深圳青铜剑科技股份有限公司 | Semiconductor device test system and method |
CN112630615A (en) * | 2020-12-10 | 2021-04-09 | 华北电力大学 | Crimping type IGBT chip dynamic characteristic experiment platform and measuring method |
CN112782552A (en) * | 2019-11-05 | 2021-05-11 | 深圳第三代半导体研究院 | Compression joint type power module detection system and detection method |
CN113030608A (en) * | 2021-02-24 | 2021-06-25 | 华北电力大学 | Power device flow equalizing characteristic evaluation experimental device |
CN113092897A (en) * | 2021-03-16 | 2021-07-09 | 荣信汇科电气股份有限公司 | Temperature fatigue aging comprehensive test device for MMC flexible direct converter valve power module |
CN113358996A (en) * | 2021-05-28 | 2021-09-07 | 特变电工西安柔性输配电有限公司 | Universal testing device and method for power module of flexible direct current converter valve |
CN113970688A (en) * | 2021-10-26 | 2022-01-25 | 特变电工西安电气科技有限公司 | General test platform and test method for IGBT power module |
CN114355143A (en) * | 2022-01-05 | 2022-04-15 | 中节能风力发电股份有限公司 | Energy discharge and inhibition device and method for IGBT characteristic test equipment |
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CN110426620B (en) * | 2019-09-03 | 2022-04-19 | 广东电网有限责任公司 | Crimping type IGBT module test system and test method |
CN110426620A (en) * | 2019-09-03 | 2019-11-08 | 广东电网有限责任公司 | A kind of compression joint type IGBT module test macro and test method |
CN112782552A (en) * | 2019-11-05 | 2021-05-11 | 深圳第三代半导体研究院 | Compression joint type power module detection system and detection method |
CN110635470A (en) * | 2019-11-11 | 2019-12-31 | 西南交通大学 | Layered control method for flexible medium-voltage direct-current railway power supply system |
CN110635470B (en) * | 2019-11-11 | 2022-03-18 | 西南交通大学 | Layered control method for flexible medium-voltage direct-current railway power supply system |
CN110850208B (en) * | 2019-11-15 | 2020-08-21 | 浙江大学 | Laminated busbar stray parameter extraction method based on SiC MOSFET frequency characteristics |
CN110850208A (en) * | 2019-11-15 | 2020-02-28 | 浙江大学 | Laminated busbar stray parameter extraction method based on SiC MOSFET frequency characteristics |
CN111537857A (en) * | 2020-04-07 | 2020-08-14 | 深圳青铜剑科技股份有限公司 | Semiconductor device test system and method |
CN112630615A (en) * | 2020-12-10 | 2021-04-09 | 华北电力大学 | Crimping type IGBT chip dynamic characteristic experiment platform and measuring method |
CN113030608A (en) * | 2021-02-24 | 2021-06-25 | 华北电力大学 | Power device flow equalizing characteristic evaluation experimental device |
CN113030608B (en) * | 2021-02-24 | 2022-02-08 | 华北电力大学 | Power device flow equalizing characteristic evaluation experimental device |
CN113092897A (en) * | 2021-03-16 | 2021-07-09 | 荣信汇科电气股份有限公司 | Temperature fatigue aging comprehensive test device for MMC flexible direct converter valve power module |
CN113358996A (en) * | 2021-05-28 | 2021-09-07 | 特变电工西安柔性输配电有限公司 | Universal testing device and method for power module of flexible direct current converter valve |
CN113358996B (en) * | 2021-05-28 | 2024-03-12 | 特变电工西安柔性输配电有限公司 | Universal testing device and method for power module of flexible direct current converter valve |
CN113970688A (en) * | 2021-10-26 | 2022-01-25 | 特变电工西安电气科技有限公司 | General test platform and test method for IGBT power module |
CN114355143A (en) * | 2022-01-05 | 2022-04-15 | 中节能风力发电股份有限公司 | Energy discharge and inhibition device and method for IGBT characteristic test equipment |
CN114355143B (en) * | 2022-01-05 | 2022-08-05 | 中节能风力发电股份有限公司 | Energy discharge and inhibition device and method for IGBT characteristic test equipment |
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