WO2021082125A1 - Oled显示面板及其制备方法、oled显示装置 - Google Patents

Oled显示面板及其制备方法、oled显示装置 Download PDF

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Publication number
WO2021082125A1
WO2021082125A1 PCT/CN2019/120467 CN2019120467W WO2021082125A1 WO 2021082125 A1 WO2021082125 A1 WO 2021082125A1 CN 2019120467 W CN2019120467 W CN 2019120467W WO 2021082125 A1 WO2021082125 A1 WO 2021082125A1
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layer
light
emitting
oled display
display panel
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PCT/CN2019/120467
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English (en)
French (fr)
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王士攀
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/620,220 priority Critical patent/US11316122B2/en
Publication of WO2021082125A1 publication Critical patent/WO2021082125A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings

Definitions

  • This application relates to the field of display technology, in particular to an OLED display panel, a preparation method thereof, and an OLED display device.
  • Organic light-emitting diodes are widely used in the display field because of their self-luminescence, wide viewing angle, wide color gamut, low energy consumption, high efficiency, fast response, ultra-light and thin, and easy flexibility.
  • the existing OLED (Organic Light- Emitting Diode (Organic Light Emitting Diode) devices in order to improve the utilization of materials and reduce costs, will avoid the use of vacuum evaporation, and will use solution processing OLED devices, but in the process of using solution processing OLED devices, due to the printed electron transport layer Solvents can damage the light-emitting layer and cause poor display effects.
  • the present application provides an OLED display panel, a preparation method thereof, and an OLED display device, which are used to solve the technical problem of damage to the light-emitting layer in the existing process of processing OLED devices using solution, resulting in poor display effect.
  • the present application provides an OLED display panel, which includes:
  • the driving circuit layer is arranged on one side of the substrate;
  • the light-emitting function layer is arranged on the side of the driving circuit layer away from the substrate, and is sequentially arranged with a pixel electrode layer, a hole injection layer, a hole transport layer, a light-emitting layer, and electrons along a direction away from the substrate.
  • Transport layer electron injection layer, common electrode layer;
  • the encapsulation layer is arranged on the side of the light-emitting function layer away from the driving circuit layer;
  • the material of the light-emitting layer includes organic host materials, organic light-emitting materials and amorphous fluoropolymers.
  • the mass fraction of the organic host material in the light-emitting layer ranges from 10% to 80%.
  • the organic host material includes 4,4'-bis(9-carbazole)biphenyl, 1,3-dicarbazole-9-ylbenzene, 3,3'-diphenyl (9H-carbazol-9-yl)-1,1'-biphenyl.
  • the mass fraction of the organic light-emitting material in the light-emitting layer ranges from 1% to 30%.
  • the organic light-emitting material includes dichloromethane, tris(2-phenylpyridine)iridium, 2,4,5,6-tetra(9-carbazolyl)-m-benzene Dinitrile.
  • the mass fraction of the amorphous fluoropolymer in the light-emitting layer ranges from 5% to 50%.
  • the amorphous fluoropolymer includes amorphous polytetrafluoroethylene.
  • the thickness of the light-emitting layer ranges from 1 nanometer to 100 nanometers.
  • the material of the electron transport layer includes organic small molecule electron transport materials.
  • the organic small molecule electron transport material includes 2,7-bis(diphenylphosphinyl)-9,9'-spirobifluorene.
  • the thickness of the electron transport layer ranges from 1 nanometer to 100 nanometers.
  • the material of the electron injection layer includes alkali metals and their salts, alkaline earth metals and their salts, and metal complexes.
  • the material of the electron injection layer includes lithium fluoride.
  • the thickness of the electron injection layer ranges from 1 nanometer to 100 nanometers.
  • the material of the common electrode layer includes one of indium oxide and indium zinc oxide.
  • the present application provides an OLED display device, the OLED display device includes an OLED display panel, and the OLED display panel includes:
  • the driving circuit layer is arranged on one side of the substrate;
  • the light-emitting function layer is arranged on the side of the driving circuit layer away from the substrate, and is sequentially arranged with a pixel electrode layer, a hole injection layer, a hole transport layer, a light-emitting layer, and electrons along a direction away from the substrate.
  • Transport layer electron injection layer, common electrode layer;
  • the encapsulation layer is arranged on the side of the light-emitting function layer away from the driving circuit layer;
  • the material of the light-emitting layer includes organic host materials, organic light-emitting materials and amorphous fluoropolymers.
  • the present application provides a method for manufacturing an OLED display panel.
  • the method for manufacturing the OLED display panel includes: providing a substrate;
  • an organic host material an organic light-emitting material and an amorphous fluoropolymer on the hole transport layer to prepare a light-emitting layer;
  • a common electrode layer is prepared on the electron injection layer to obtain a light-emitting functional layer.
  • the light-emitting functional layer includes a pixel electrode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a common electrode.
  • Floor
  • An encapsulation layer is prepared on the light-emitting function layer.
  • the step of using an organic host material, an organic light-emitting material, and an amorphous fluoropolymer on the hole transport layer to prepare a light-emitting layer includes:
  • organic host materials organic light-emitting materials and amorphous fluoropolymers
  • a light-emitting layer solution is used to prepare a light-emitting layer on the hole transport layer.
  • the step of mixing the organic host material, the organic light-emitting material, and the amorphous fluoropolymer with a specific solvent to obtain the light-emitting layer solution includes:
  • the obtained mixed solution is processed under specific conditions to obtain an organic light-emitting material.
  • the step of preparing the light-emitting layer on the hole transport layer using the light-emitting layer solution includes:
  • the luminescent layer solution is dried and baked to obtain the luminescent layer.
  • the present application provides an OLED display panel and a preparation method thereof, and an OLED display device.
  • the OLED display panel includes a substrate, a driving circuit layer, a light-emitting function layer, and an encapsulation layer.
  • the driving circuit layer is arranged on one side of the substrate,
  • the light-emitting function layer is arranged on a side of the driving circuit layer away from the substrate, and a pixel electrode layer, a hole injection layer, a hole transport layer, a light-emitting layer, and a light-emitting layer are sequentially arranged in a direction away from the substrate.
  • An electron transport layer, an electron injection layer, a common electrode layer, the encapsulation layer is disposed on the side of the light-emitting function layer away from the drive circuit layer, wherein the material of the light-emitting layer includes an organic host material, an organic light-emitting material and Amorphous fluoropolymer; the light-emitting layer is prepared by using organic host materials, organic light-emitting materials and amorphous fluoropolymers, so that the amorphous polymer improves the thermal stability and solvent resistance of the light-emitting layer, making it possible to use solvents to prepare electronic In the transmission layer, due to the improved solvent corrosion resistance of the light-emitting layer, the light-emitting layer will not be damaged by the solvent, so that when the film layer of the OLED display panel is prepared using a solution, the light-emitting layer will not be damaged, thereby making it possible to prepare from a full solution
  • the organic layer of the OLED display panel and when the organic layer is prepared using a full solution,
  • FIG. 1 is a first schematic diagram of an OLED display panel provided by an embodiment of the application
  • FIG. 2 is a schematic diagram of a light-emitting layer provided by an embodiment of the application.
  • FIG. 3 is a flowchart of a manufacturing method of an OLED display panel provided by an embodiment of the application
  • FIG. 4 is a second schematic diagram of an OLED display panel provided by an embodiment of the application.
  • the present application addresses the technical problem of damage to the light-emitting layer in the existing process of processing OLED devices using solutions, resulting in poor display effects, and the embodiments of the present application are used to solve this problem.
  • an embodiment of the present application provides an OLED display panel
  • the OLED display panel includes:
  • the driving circuit layer is arranged on the side of the substrate 11;
  • the light-emitting function layer is arranged on the side of the driving circuit layer away from the substrate 11, and a pixel electrode layer 131, a hole injection layer 132, and a hole transport layer 133 are sequentially arranged along the direction away from the substrate 11 ,
  • the encapsulation layer 14 is arranged on the side of the light-emitting function layer away from the driving circuit layer;
  • the material of the light-emitting layer 134 includes organic host materials, organic light-emitting materials, and amorphous fluoropolymers.
  • the embodiment of the present application provides an OLED display panel.
  • the OLED display panel includes a substrate, a driving circuit layer, a light-emitting function layer, and an encapsulation layer.
  • the driving circuit layer is disposed on one side of the substrate, and the light-emitting function layer is disposed.
  • a pixel electrode layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are sequentially arranged in a direction away from the substrate.
  • the encapsulation layer is arranged on the side of the light-emitting function layer away from the driving circuit layer, wherein the material of the light-emitting layer includes an organic host material, an organic light-emitting material, and an amorphous fluoropolymer;
  • the light-emitting layer is made by using organic host materials, organic light-emitting materials, and amorphous fluoropolymers, so that the amorphous polymer improves the thermal stability and solvent corrosion resistance of the light-emitting layer, so that the use of solvents
  • the electron transport layer due to the improved solvent corrosion resistance of the light-emitting layer, the light-emitting layer will not be damaged by the solvent, so that when the solution is used to prepare the film layer of the OLED display panel, the light-emitting layer will not be damaged.
  • the organic layer of the OLED display panel is prepared by solution, and when the organic layer is prepared using the full solution, the film layer of the OLED display panel will not be damaged, thereby solving the problem of damage to the light-emitting layer in the existing process of processing OLED devices with solution, resulting in poor display effect Technical issues.
  • the full-solution preparation of OLED display panels mentioned in the examples of this application means that the organic layer in the light-emitting functional layer that can be prepared by the solution is prepared by the solution, including the hole injection layer, the hole transport layer, and the light emitting layer.
  • the layer, the electron transport layer, and the pixel electrode layer and the common electrode layer are oxides, which are prepared by evaporation or sputtering.
  • the driving circuit layer includes a buffer layer 121, an active layer 122, a first gate insulating layer 123, a first metal layer 124, a second gate insulating layer 125, The second metal layer 126, the interlayer insulating layer 127, the source and drain layer 128 and the planarization layer 129.
  • a light-emitting function layer is prepared on the driver circuit layer, so that a fully solution prepared OLED display panel is obtained .
  • the light-emitting function layer further includes a pixel definition layer 138, the pixel definition layer 138 is disposed on the pixel electrode layer 131, and the pixel definition layer defines a light-emitting area
  • the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are arranged in the light emitting area defined by the pixel definition layer.
  • the material of the pixel electrode layer includes indium tin oxide and indium zinc oxide, and the pixel definition layer may be prepared by magnetron sputtering.
  • the thickness of the pixel electrode layer ranges from 50 nanometers to 200 nanometers.
  • the material of the hole injection layer includes small organic molecules and polymer hole injection materials, and the material of the hole injection layer includes 3,4-ethylenedioxythiophene polymer PEDOT. :PSS, the hole injection layer can be formed by providing a hole injection layer solution containing the above-mentioned materials, and then the hole injection layer solution is formed on the pixel electrode layer by spin coating or printing, and the printing method includes inkjet printing .
  • the thickness of the hole injection layer ranges from 1 nanometer to 200 nanometers.
  • the material of the hole transport layer includes small organic molecules or polymer hole transport materials
  • the material of the hole transport layer includes polyvinylcarbazole
  • the hole injection layer can be provided by A hole transport layer solution containing the above-mentioned materials, and then the hole transport layer solution is spin-coated or printed on the hole injection layer. Since the hole injection layer and the hole transport layer are made of cross-linked organic materials, When preparing the hole transport layer, the hole transport layer solution will not damage the hole injection layer.
  • the thickness of the hole transport layer ranges from 1 nanometer to 100 nanometers.
  • the mass fraction of the organic host material of the light-emitting layer ranges from 10% to 80%.
  • the organic host material includes 4,4'-bis(9-carbazole)biphenyl, 1,3-dicarbazole-9-ylbenzene, 3,3'-bis(9H- Carbazole-9-yl)-1,1'-biphenyl, wherein the molecular formula of the 4,4'-bis(9-carbazole)biphenyl is C 36 H 24 N 2 , referred to as CBP for short;
  • the molecular formula of 1,3- dicarbazol-9-ylbenzene is C 30 H 20 N 2 , referred to as mCP for short, and the 3,3'-bis(9H-carbazol-9-yl)-1,1'-
  • the molecular formula of biphenyl is C 36 H 24 N 2 , abbreviated as mCBP.
  • the mass fraction of the organic light-emitting material of the light-emitting layer includes 1% to 30%.
  • the organic light-emitting material includes dichloromethane, tris(2-phenylpyridine)iridium, 2,4,5,6-tetra(9-carbazolyl)-isophthalonitrile;
  • dichloromethane tris(2-phenylpyridine)iridium, 2,4,5,6-tetra(9-carbazolyl)-isophthalonitrile
  • the molecular formula of dichloromethane is CH 2 Cl 2 , abbreviated as DCM
  • the dichloromethane is a fluorescent material
  • tris(2-phenylpyridine) iridium whose name is Ir(ppy) 3
  • the 2-Phenylpyridine) iridium is a phosphorescent material.
  • the molecular formula of 2,4,5,6-tetra(9-carbazolyl) -isophthalonitrile is C 56 H 32 N 6 , and its name is 4CzIPN.
  • 2,4,5,6-Tetra(9-carbazolyl)-isophthalonitrile is a thermally activated delayed fluorescent material, that is, the organic light-emitting material can be a fluorescent material or a phosphorescent material.
  • the mass fraction of the amorphous fluoropolymer material of the light-emitting layer ranges from 5% to 50%.
  • the amorphous fluoropolymer includes amorphous polytetrafluoroethylene.
  • the thickness of the light-emitting layer ranges from 1 nanometer to 100 nanometers.
  • the material of the electron transport layer includes an organic small molecule electron transport material
  • the organic small molecule transport material includes 2,7-bis(diphenylphosphinyl)-9,9'-spiro Difluorene, its molecular formula is C49H 34 O 2 P 2
  • the electron transport layer can be prepared by using a solution, for example, including organic small molecules
  • the electron transport layer solution of the material is prepared on the light-emitting layer by spin coating or printing. Since the light-emitting layer in the embodiments of the present application has strong resistance to solvent erosion, the electron transport layer solution will not corrode the light-emitting layer. Cause damage.
  • the thickness of the electron transport layer ranges from 1 nanometer to 100 nanometers.
  • the material of the electron injection layer includes alkali metals and their salts, alkaline earth metals and their salts, and metal complexes, and the material of the electron injection layer includes lithium fluoride.
  • the thickness of the electron injection layer ranges from 1 nanometer to 100 nanometers.
  • the material of the common electrode layer includes low work function metal materials, low work function metal alloys, and transparent metal oxides.
  • the transparent metal oxides include indium tin oxide and indium zinc oxide, which can be passed through a vacuum
  • the common electrode layer is prepared by evaporation on the electron injection layer.
  • the thickness of the common electrode layer ranges from 10 nanometers to 200 nanometers.
  • an embodiment of the present application provides a light-emitting layer.
  • the material of the light-emitting layer includes an organic host material 211, an organic light-emitting material 212 and an amorphous fluoropolymer 213.
  • An embodiment of the present application provides an OLED display device, the OLED display device includes an OLED display panel, and the OLED display panel includes:
  • the driving circuit layer is arranged on one side of the substrate;
  • the light-emitting function layer is arranged on the side of the driving circuit layer away from the substrate, and is sequentially arranged with a pixel electrode layer, a hole injection layer, a hole transport layer, a light-emitting layer, and electrons along a direction away from the substrate.
  • Transport layer electron injection layer, common electrode layer;
  • the encapsulation layer is arranged on the side of the light-emitting function layer away from the driving circuit layer;
  • the material of the light-emitting layer includes organic host materials, organic light-emitting materials and amorphous fluoropolymers.
  • An embodiment of the application provides an OLED display device, the OLED display device includes an OLED display panel, the OLED display panel includes a substrate, a driving circuit layer, a light-emitting function layer, and an encapsulation layer, the driving circuit layer is disposed on the substrate On one side, the light-emitting function layer is arranged on the side of the driving circuit layer away from the substrate, and a pixel electrode layer, a hole injection layer, a hole transport layer, and a pixel electrode layer are sequentially arranged in a direction away from the substrate.
  • the light-emitting layer, the electron transport layer, the electron injection layer, the common electrode layer, the encapsulation layer is arranged on the side of the light-emitting function layer away from the driving circuit layer, wherein the material of the light-emitting layer includes organic host material, organic Light-emitting materials and amorphous fluoropolymers; by using organic host materials, organic light-emitting materials and amorphous fluoropolymers to prepare the light-emitting layer, the amorphous polymer improves the thermal stability and solvent resistance of the light-emitting layer, making it easier to use
  • the solvent is used to prepare the electron transport layer, due to the improved solvent corrosion resistance of the light-emitting layer, the light-emitting layer will not be damaged by the solvent, so that when the solution is used to prepare the film layer of the OLED display panel, the light-emitting layer will not be damaged, thereby making it possible to pass
  • the organic layer of the OLED display panel is prepared with a full solution, and when the
  • an embodiment of the present application provides a method for manufacturing an OLED display panel.
  • the method for manufacturing an OLED display panel includes: S1, providing a substrate;
  • a common electrode layer is prepared on the electron injection layer to obtain a light-emitting functional layer.
  • the light-emitting functional layer includes a pixel electrode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, Common electrode layer
  • the embodiment of the present application provides a method for preparing an OLED display panel.
  • the OLED display panel prepared by the method for preparing an OLED display panel includes a substrate, a driving circuit layer, a light-emitting function layer, and an encapsulation layer.
  • the driving circuit layer is disposed on the On the side of the substrate, the light-emitting function layer is arranged on the side of the drive circuit layer away from the substrate, and a pixel electrode layer, a hole injection layer, and a hole transport layer are sequentially arranged in a direction away from the substrate.
  • the encapsulation layer is arranged on the side of the light-emitting function layer away from the driving circuit layer, wherein the light-emitting layer adopts the material of the light-emitting layer including Organic host materials, organic light-emitting materials and amorphous fluoropolymers.
  • Organic host materials, organic light-emitting materials and amorphous fluoropolymers are used to make the light-emitting layer, so that the amorphous polymer improves the light-emitting layer.
  • the thermal stability and solvent corrosion resistance of the solvent make the solvent corrosion resistance of the light emitting layer improve when the solvent is used to prepare the electron transport layer, so that the light emitting layer will not be damaged by the solvent, so that the solution can be used to prepare the film layer of the OLED display panel.
  • the organic layer of the OLED display panel can be prepared by the full solution, and when the organic layer is prepared using the full solution, the film layer of the OLED display panel will not be damaged, thereby solving the problem of the existing solution.
  • the process of processing OLED devices has a technical problem of damaging the light-emitting layer and causing poor display effects.
  • the step of using an organic host material, an organic light-emitting material and an amorphous fluoropolymer on the hole transport layer to prepare a light-emitting layer includes:
  • organic host materials organic light-emitting materials and amorphous fluoropolymers
  • the light-emitting layer solution to prepare the light-emitting layer on the hole transport layer; when preparing the light-emitting layer, dissolve the organic host material, organic light-emitting material and amorphous fluoropolymer in a specific solvent, and then use the solution method to mix the resulting mixed solution Stir at a certain temperature to obtain a uniform light-emitting layer solution, and then use one of spin coating, inkjet printing, screen printing, and gravure printing to form a light-emitting layer on the hole transport layer.
  • the step of providing an organic host material, an organic luminescent material and an amorphous fluoropolymer includes:
  • Amorphous polytetrafluoroethylene with a mass fraction of 30% is provided as an amorphous fluoropolymer.
  • the step of mixing the organic host material, the organic light-emitting material, and the amorphous fluoropolymer with a specific solvent to obtain the light-emitting layer solution includes:
  • the obtained mixed solution is processed under specific conditions to obtain organic luminescent materials; among them, the fluorine-based solvents include FC40, FC77, FC3282, and the aromatic hydrocarbon solvents include ethyl benzoate, o-xylene, p-xylene, and o-xylene. Chlorobenzene, cyclohexylbenzene.
  • the specific conditions include stirring the resulting mixed solution at 60 degrees Celsius for 12 hours.
  • the step of preparing the light-emitting layer on the hole transport layer by using the light-emitting layer solution includes:
  • the luminescent layer solution is dried and baked to obtain the luminescent layer; after the luminescent layer solution is spin-coated or printed on the hole transport layer, the luminescent layer solution is dried and baked to dry the solution to form the luminescent layer.
  • the step of preparing an electron transport layer on the light-emitting layer includes:
  • organic small molecule electron transport materials to prepare an electron transport layer on the light-emitting layer; after using organic host materials, organic light-emitting materials and amorphous fluoropolymers to prepare light, the electron transport layer can be formed by the solution method, and the organic small molecules can be used to form the electron transport layer.
  • An electron transport material such as 2,7-bis(diphenylphosphinyl)-9,9'-spirobifluorene is dissolved in a solvent, and then the electron transport layer is formed by spin coating or printing.
  • an embodiment of the present application provides an OLED display panel, and the OLED display panel includes:
  • Pixel electrode layer 131
  • the hole injection layer 132 is disposed on the pixel electrode layer 131;
  • the hole transport layer 133 is disposed on the hole injection layer 132;
  • the light-emitting layer 134 is disposed on the hole transport layer 133;
  • the electron transport layer 135 is disposed on the light-emitting layer 134;
  • the electron injection layer 136 is disposed on the electron transport layer 135;
  • the common electrode layer 137 is disposed on the electron injection layer 136;
  • the material of the light-emitting layer includes organic host materials, organic light-emitting materials and amorphous fluoropolymers.
  • indium tin oxide is used to prepare the pixel electrode layer by sputtering, and the thickness of the prepared pixel electrode layer is 70 nanometers; then a hole injection layer is prepared on the pixel electrode layer by using inkjet printing.
  • the hole injection layer solution with PEDOT:PSS is printed on the pixel electrode layer, and dried and baked to form the hole injection layer with a thickness of 40 nanometers; then spin coating is used on the hole injection layer
  • the hole transport layer solution with polyvinylcarbazole is coated on the hole injection layer, and the hole transport layer is formed by drying and baking. The thickness of the hole transport layer is 20 nanometers; and then the hole transport layer is used on the hole transport layer.
  • Luminescence of 4,4'-bis(9-carbazole) with a mass fraction of 60%, tris(2-phenylpyridine) iridium with a mass fraction of 10%, and amorphous polytetrafluoroethylene with a mass fraction of 30% The layer solution is ink-jet printed, and dried and baked on the hole transport layer to obtain a light-emitting layer, the thickness of the light-emitting layer is 60 nanometers; and then use 2,7-bis(diphenylphosphine oxide) on the light-emitting layer Base)-9,9'-spirobifluorene solution to prepare an electron transport layer, the thickness of the electron transport layer is 30 nanometers; then use lithium fluoride to prepare an electron injection layer on the electron transport layer, the electron injection layer The thickness is 1 nanometer; then, indium zinc oxide is used to prepare a common electrode layer on the electron injection layer, and the thickness of the common electrode layer is 50 nanometers.
  • the embodiment of the application provides an OLED display panel and a preparation method thereof, and an OLED display device.
  • the OLED display panel includes a substrate, a driving circuit layer, a light-emitting function layer, and an encapsulation layer.
  • the driving circuit layer is disposed on the first substrate.
  • Side, the light-emitting function layer is arranged on the side of the driving circuit layer away from the substrate, and a pixel electrode layer, a hole injection layer, a hole transport layer, and a light emitting layer are sequentially arranged in a direction away from the substrate.
  • the encapsulation layer is arranged on the side of the light-emitting function layer away from the drive circuit layer, wherein the material of the light-emitting layer includes organic host material, organic light-emitting Materials and amorphous fluoropolymers.
  • organic host materials, organic light-emitting materials and amorphous fluoropolymers are used to make the light-emitting layer, so that the amorphous polymer improves the thermal stability and resistance of the light-emitting layer.
  • Solvent corrosiveness, so that when the solvent is used to prepare the electron transport layer, the light-emitting layer will not be damaged by the solvent due to the improved solvent-erosion resistance of the light-emitting layer, so that when the solution is used to prepare the film layer of the OLED display panel, the light-emitting layer will not It is damaged, so that the organic layer of the OLED display panel can be prepared by the full solution, and when the organic layer is prepared using the full solution, the film layer of the OLED display panel will not be damaged, thereby solving the existing process of processing OLED devices by solution Damage to the light-emitting layer, leading to technical problems of poor display effect.

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  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示面板及其制备方法、OLED显示装置，该OLED显示面板通过采用有机主体材料（211）、有机发光材料（212）和无定型氟聚合物（213）制备发光层，提高了发光层的热稳定性和耐溶剂侵蚀性，使得在使用溶剂制备电子传输层时，发光层不会被溶剂损伤。

Description

OLED显示面板及其制备方法、OLED显示装置 技术领域
本申请涉及显示技术领域，尤其是涉及一种OLED显示面板及其制备方法、OLED显示装置。
 背景技术
有机发光二极管因为具有自发光、宽视角、广色域、低能耗、高效率、响应速度快、超轻超薄及易于柔性化等特点，被广泛应用与显示领域，现有OLED（Organic Light-Emitting Diode，有机发光二极管）器件为了提高材料的利用率，降低成本，会避免采用真空蒸镀，而会采用溶液加工OLED器件，但在使用溶液加工OLED器件的过程中，由于印刷电子传输层的溶剂会对发光层造成破坏，会导致显示效果不好。
所以，现有采用溶液加工OLED器件的过程存在损伤发光层，导致显示效果不良的技术问题。
 技术问题
本申请提供一种OLED显示面板及其制备方法、OLED显示装置，用于解决现有采用溶液加工OLED器件的过程存在损伤发光层，导致显示效果不良的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种OLED显示面板，该OLED显示面板包括：
衬底；
驱动电路层，设置于所述衬底一侧；
发光功能层，设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层；
封装层，设置于所述发光功能层远离所述驱动电路层的一侧；
其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物。
在本申请提供的OLED显示面板中，所述发光层中的有机主体材料的质量分数范围包括10%至80%。
在本申请提供的OLED显示面板中，所述有机主体材料包括4，4'-二(9-咔唑)联苯、1，3-二咔唑-9-基苯、3，3'-二(9H-咔唑-9-基)-1，1'-联苯。
在本申请提供的OLED显示面板中，所述发光层中的有机发光材料的质量分数范围包括1%至30%。
在本申请提供的OLED显示面板中，所述有机发光材料包括二氯甲烷、三（2-苯基吡啶）合铱、2，4，5，6-四(9-咔唑基)-间苯二腈。
在本申请提供的OLED显示面板中，所述发光层中的无定型氟聚合物的质量分数范围包括5%至50%。
在本申请提供的OLED显示面板中，所述无定型氟聚合物包括无定型聚四氟乙烯。
在本申请提供的OLED显示面板中，所述发光层的厚度范围包括1纳米至100纳米。
在本申请提供的OLED显示面板中，所述电子传输层的材料包括有机小分子电子传输材料。
在本申请提供的OLED显示面板中，所述有机小分子电子传输材料包括2，7-双(二苯基氧膦基)-9，9'-螺二芴。
在本申请提供的OLED显示面板中，所述电子传输层的厚度范围包括1纳米至100纳米。
在本申请提供的OLED显示面板中，所述电子注入层的材料包括碱金属及其盐类、碱土金属及其盐类、金属配合物。
在本申请提供的OLED显示面板中，所述电子注入层的材料包括氟化锂。
在本申请提供的OLED显示面板中，所述电子注入层的厚度范围包括1纳米至100纳米。
在本申请提供的OLED显示面板中，所述公共电极层的材料包括氧化铟烯和氧化铟锌中的一种。
同时，本申请提供一种OLED显示装置，该OLED显示装置包括OLED显示面板，所述OLED显示面板包括：
衬底；
驱动电路层，设置于所述衬底一侧；
发光功能层，设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层；
封装层，设置于所述发光功能层远离所述驱动电路层的一侧；
其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物。
同时，本申请提供一种OLED显示面板的制备方法，该OLED显示面板的制备方法包括：提供衬底；
在所述衬底上制备驱动电路层；
在所述驱动电路层上制备像素电极层；
在所述像素电极层上制备空穴注入层；
在所述空穴注入层上制备空穴传输层；
在所述空穴传输层上使用有机主体材料、有机发光材料和无定型氟聚合物制备发光层；
在所述发光层上制备电子传输层；
在所述电子传输层上制备电子注入层；
在所述电子注入层上制备公共电极层，得到发光功能层，所述发光功能层包括像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层；
在所述发光功能层上制备封装层。
在本申请提供的OLED显示面板的制备方法中，所述在空穴传输层上使用有机主体材料、有机发光材料和无定型氟聚合物制备发光层的步骤包括：
提供有机主体材料、有机发光材料和无定型氟聚合物；
将有机主体材料、有机发光材料和无定型氟聚合物与特定溶剂混合，得到发光层溶液；
使用发光层溶液在空穴传输层上制备发光层。
在本申请提供的OLED显示面板的制备方法中，所述将有机主体材料、有机发光材料和无定型氟聚合物与特定溶剂混合，得到发光层溶液的步骤包括：
提供氟系溶剂和芳香烃溶剂的混合物作为特定溶剂；
将有机主体材料、有机发光材料和无定型氟聚合物溶解到氟系溶剂和芳香烃溶剂的混合物中，得到混合溶液；
将得到的混合溶液在特定条件下进行处理，得到有机发光材料。
在本申请提供的OLED显示面板的制备方法中，所述使用发光层溶液在空穴传输层上制备发光层的步骤包括：
将发光层溶液印刷到空穴传输层上；
对发光层溶液进行干燥和烘烤，得到发光层。
 有益效果
本申请提供一种OLED显示面板及其制备方法、OLED显示装置，该OLED显示面板包括衬底、驱动电路层、发光功能层和封装层，所述驱动电路层设置于所述衬底一侧，所述发光功能层设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层，所述封装层设置于所述发光功能层远离所述驱动电路层的一侧，其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物；通过采用有机主体材料、有机发光材料和无定型氟聚合物制备发光层，使得无定型聚合物提高了发光层的热稳定性和耐溶剂侵蚀性，使得在使用溶剂制备电子传输层时，由于发光层的耐溶剂侵蚀性提高，使得发光层不会被溶剂损伤，从而使得使用溶液制备OLED显示面板的膜层时，发光层不会受到损伤，进而使得可以通过全溶液制备OLED显示面板的有机层，且在使用全溶液制备有机层时，不会损伤OLED显示面板的膜层，从而解决了现有采用溶液加工OLED器件的过程存在损伤发光层，导致显示效果不良的技术问题。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的OLED显示面板的第一示意图；
图2为本申请实施例提供的发光层的示意图；
图3为本申请实施例提供的OLED显示面板的制备方法的流程图；
图4为本申请实施例提供的OLED显示面板的第二示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有采用溶液加工OLED器件的过程存在损伤发光层，导致显示效果不良的技术问题，本申请实施例用以解决该问题。
如图1所示，本申请实施例提供一种OLED显示面板，该OLED显示面板包括：
衬底11；
驱动电路层，设置于所述衬底11一侧；
发光功能层，设置于所述驱动电路层远离所述衬底11的一侧，沿远离所述衬底11的方向上依次设置有像素电极层131、空穴注入层132、空穴传输层133、发光层134、电子传输层135、电子注入层136、公共电极层137；
封装层14，设置于所述发光功能层远离所述驱动电路层的一侧；
其中，所述发光层134的材料包括有机主体材料、有机发光材料和无定型氟聚合物。
本申请实施例提供一种OLED显示面板，该OLED显示面板包括衬底、驱动电路层、发光功能层和封装层，所述驱动电路层设置于所述衬底一侧，所述发光功能层设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层，所述封装层设置于所述发光功能层远离所述驱动电路层的一侧，其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物；在制备OLED显示面板时，通过使用有机主体材料、有机发光材料和无定型氟聚合物制成发光层，使得无定型聚合物提高了发光层的热稳定性和耐溶剂侵蚀性，使得在使用溶剂制备电子传输层时，由于发光层的耐溶剂侵蚀性提高，使得发光层不会被溶剂损伤，从而使得使用溶液制备OLED显示面板的膜层时，发光层不会受到损伤，进而使得可以通过全溶液制备OLED显示面板的有机层，且在使用全溶液制备有机层时，不会损伤OLED显示面板的膜层，从而解决了现有采用溶液加工OLED器件的过程存在损伤发光层，导致显示效果不良的技术问题。
需要说明的是，本申请实施例中提到的全溶液制备OLED显示面板，是指可以采用溶液制备的发光功能层中的有机层采用溶液制备，包括空穴注入层、空穴传输层、发光层、电子传输层，而像素电极层和公共电极层为氧化物，采用蒸镀或者溅射方式制备。
在一种实施例中，如图1所示，所述驱动电路层包括缓冲层121、有源层122、第一栅极绝缘层123、第一金属层124、第二栅极绝缘层125、第二金属层126、层间绝缘层127、源漏极层128和平坦化层129，在制备完成驱动电路层后，在驱动电路层上制备发光功能层，使得得到全溶液制备的OLED显示面板。
在一种实施例中，如图1所示，所述发光功能层还包括像素定义层138，所述像素定义层138设置于所述像素电极层131上，所述像素定义层定义出发光区域，所述空穴注入层、空穴传输层、发光层、电子传输层、电子注入层设置所述像素定义层定义出的发光区域内。
在一种实施例中，所述像素电极层的材料包括氧化铟锡、氧化铟锌，所述像素定义层可以采用磁控溅射的方式制备。
在一种实施例中，所述像素电极层的厚度范围包括50纳米至200纳米。
在一种实施例中，所述空穴注入层的材料包括有机小分子和聚合物空穴注入材料，所述空穴注入层的材料包括3，4-乙烯二氧噻吩单体的聚合物PEDOT:PSS，所述空穴注入层可以通过提供包含上述材料的空穴注入层溶液，然后将该空穴注入层溶液通过旋涂或者印刷形成在像素电极层上，所述印刷方式包括喷墨打印。
在一种实施例中，所述空穴注入层的厚度范围包括1纳米至200纳米。
在一种实施例中，所述空穴传输层的材料包括有机小分子或者聚合物空穴传输材料，所述空穴传输层的材料包括聚乙烯咔唑，所述空穴注入层可以通过提供包含上述材料的空穴传输层溶液，然后将该空穴传输层溶液提供旋涂或者印刷方式形成在空穴注入层上，由于空穴注入层和空穴传输层采用交联的有机材料，使得在制备空穴传输层时，空穴传输层溶液不会对空穴注入层产生损伤。
在一种实施例中，所述空穴传输层的厚度范围包括1纳米至100纳米。
在一种实施例中，所述发光层的有机主体材料的质量分数范围包括10%至80%。
在一种实施例中，所述有机主体材料包括4，4'-二(9-咔唑)联苯、1，3-二咔唑-9-基苯、3，3'-二(9H-咔唑-9-基)-1，1'-联苯，其中，所述4，4'-二(9-咔唑)联苯的分子式为C 36H 24N 2，简称为CBP；所述1，3-二咔唑-9-基苯的分子式为C 30H 20N 2，简称为mCP，所述3，3'-二(9H-咔唑-9-基)-1，1'-联苯的分子式为C 36H 24N 2，简称为mCBP。
在一种实施例中，所述发光层的有机发光材料的质量分数范围包括1%至30%。
在一种实施例中，所述有机发光材料包括二氯甲烷、三（2-苯基吡啶）合铱、2，4，5，6-四(9-咔唑基)-间苯二腈；其中，二氯甲烷的分子式为CH 2Cl 2，简称为DCM，所述二氯甲烷为荧光材料，三（2-苯基吡啶）合铱，其名称为Ir(ppy) 3，所述三（2-苯基吡啶）合铱为磷光材料，2，4，5，6-四(9-咔唑基)-间苯二腈的分子式为C 56H 32N 6，其名称为4CzIPN，所述2，4，5，6-四(9-咔唑基)-间苯二腈为热活化延迟荧光材料，即所述有机发光材料可以为荧光材料或者磷光材料。
在一种实施例中，所述发光层的无定型氟聚合物材料的质量分数范围包括5%至50%。
在一种实施例中，所述无定型氟聚合物包括无定型聚四氟乙烯。
在一种实施例中，所述发光层的厚度范围包括1纳米至100纳米。
在一种实施例中，所述电子传输层的材料包括有机小分子电子传输材料，所述有机小分子传输材料包括2，7-双(二苯基氧膦基)-9，9'-螺二芴，其分子式为C49H 34O 2P 2，在发光层采用有机主体材料、有机发光材料和无定型氟聚合物制成后，电子传输层可以采用溶液制备，例如采用包括有机小分子电子传输材料的电子传输层溶液通过旋涂或者印刷的方式制备在发光层上，由于本申请实施例中发光层具有较强的耐溶剂侵蚀性，使得电子传输层溶液不会侵蚀发光层，对发光层造成损伤。
在一种实施例中，所述电子传输层的厚度范围包括1纳米至100纳米。
在一种实施例中，所述电子注入层的材料包括碱金属及其盐类、碱土金属及其盐类、金属配合物，所述电子注入层的材料包括氟化锂。
在一种实施例中，所述电子注入层的厚度范围包括1纳米至100纳米。
在一种实施例中，所述公共电极层的材料包括低功函金属材料、低功函金属合金、透明金属氧化物，所述透明金属氧化物包括氧化铟锡、氧化铟锌，可以通过真空蒸镀在电子注入层上制备公共电极层。
在一种实施例中，所述公共电极层的厚度范围包括10纳米至200纳米。
在一种实施例中，如图2所示，本申请实施例提供一种发光层，该发光层的材料包括有机主体材料211、有机发光材料212和无定型氟聚合物213。
本申请实施例提供一种OLED显示装置，该OLED显示装置包括OLED显示面板，该OLED显示面板包括：
衬底；
驱动电路层，设置于所述衬底一侧；
发光功能层，设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层；
封装层，设置于所述发光功能层远离所述驱动电路层的一侧；
其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物。
本申请实施例提供一种OLED显示装置，该OLED显示装置包括OLED显示面板，该OLED显示面板包括衬底、驱动电路层、发光功能层和封装层，所述驱动电路层设置于所述衬底一侧，所述发光功能层设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层，所述封装层设置于所述发光功能层远离所述驱动电路层的一侧，其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物；通过采用有机主体材料、有机发光材料和无定型氟聚合物制备发光层，使得无定型聚合物提高了发光层的热稳定性和耐溶剂侵蚀性，使得在使用溶剂制备电子传输层时，由于发光层的耐溶剂侵蚀性提高，使得发光层不会被溶剂损伤，从而使得使用溶液制备OLED显示面板的膜层时，发光层不会受到损伤，进而使得可以通过全溶液制备OLED显示面板的有机层，且在使用全溶液制备有机层时，不会损伤OLED显示面板的膜层，从而解决了现有采用溶液加工OLED器件的过程存在损伤发光层，导致显示效果不良的技术问题。
如图3所示，本申请实施例提供一种OLED显示面板的制备方法，该OLED显示面板制备方法包括：    S1，提供衬底；
S2，在所述衬底上制备驱动电路层；
S3，在所述驱动电路层上制备像素电极层；
S4，在所述像素电极层上制备空穴注入层；
S5，在所述空穴注入层上制备空穴传输层；
S6，在所述空穴传输层上使用有机主体材料、有机发光材料和无定型氟聚合物制备发光层；
S7，在所述发光层上制备电子传输层；
S8，在所述电子传输层上制备电子注入层；
S9，在所述电子注入层上制备公共电极层，得到发光功能层，所述发光功能层包括像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层；
S10，在所述发光功能层上制备封装层。
本申请实施例提供一种OLED显示面板的制备方法，该OLED显示面板的制备方法制备的OLED显示面板包括衬底、驱动电路层、发光功能层和封装层，所述驱动电路层设置于所述衬底一侧，所述发光功能层设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层，所述封装层设置于所述发光功能层远离所述驱动电路层的一侧，其中，所述发光层采用发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物，在制备OLED显示面板时，通过使用有机主体材料、有机发光材料和无定型氟聚合物制成发光层，使得无定型聚合物提高了发光层的热稳定性和耐溶剂侵蚀性，使得在使用溶剂制备电子传输层时，由于发光层的耐溶剂侵蚀性提高，使得发光层不会被溶剂损伤，从而使得使用溶液制备OLED显示面板的膜层时，发光层不会受到损伤，进而使得可以通过全溶液制备OLED显示面板的有机层，且在使用全溶液制备有机层时，不会损伤OLED显示面板的膜层，从而解决了现有采用溶液加工OLED器件的过程存在损伤发光层，导致显示效果不良的技术问题。
在一种实施例中，所述在空穴传输层上使用有机主体材料、有机发光材料和无定型氟聚合物制备发光层的步骤包括：
提供有机主体材料、有机发光材料和无定型氟聚合物；
将有机主体材料、有机发光材料和无定型氟聚合物与特定溶剂混合，得到发光层溶液；
使用发光层溶液在空穴传输层上制备发光层；在制备发光层时，将有机主体材料、有机发光材料和无定型氟聚合物溶解于特定溶剂中，然后采用溶液法将混合得到的混合溶液在一定温度下进行搅拌，得到均匀的发光层溶液，然后将发光层溶液采用旋涂、喷墨打印、丝网印刷、凹版印刷中的一种在空穴传输层上形成发光层。
在一种实施例中，所述提供有机主体材料、有机发光材料和无定型氟聚合物的步骤包括：
提供质量分数为60%的4，4'-二(9-咔唑)联苯作为有机主体材料；
提供质量分数为10%的三（2-苯基吡啶）合铱作为有机发光材料；
提供质量分数为30%的无定型聚四氟乙烯作为无定型氟聚合物。
在一种实施例中，所述将有机主体材料、有机发光材料和无定型氟聚合物与特定溶剂混合，得到发光层溶液的步骤包括：
提供氟系溶剂和芳香烃溶剂的混合物作为特定溶剂；
将有机主体材料、有机发光材料和无定型氟聚合物溶解到氟系溶剂和芳香烃溶剂的混合物中，得到混合溶液；
将得到的混合溶液在特定条件下进行处理，得到有机发光材料；其中，氟系溶剂包括FC40、FC77、FC3282，所述芳香烃溶剂包括苯甲酸乙酯、邻二甲苯、对二甲苯、邻二氯苯、环己基苯。
在一种实施例中，特定条件包括将得到的混合溶液在60摄氏度下搅拌12小时。
在一种实施例中，所述使用发光层溶液在空穴传输层上制备发光层的步骤包括：
将发光层溶液印刷到空穴传输层上；
对发光层溶液进行干燥和烘烤，得到发光层；在将发光层溶液旋涂或者印刷到空穴传输层上后，通过对发光层溶液进行干燥和烘烤，使得溶液干燥形成发光层。
在一种实施例中，所述在发光层上制备电子传输层的步骤包括：
提供2，7-双(二苯基氧膦基)-9，9'-螺二芴作为有机小分子电子传输材料；
使用有机小分子电子传输材料在发光层上制备电子传输层；在采用有机主体材料、有机发光材料和无定型氟聚合物制备发光后，可以采用溶液法形成电子传输层，可以通过将有机小分子电子传输材料例如2，7-双(二苯基氧膦基)-9，9'-螺二芴溶于溶剂中，然后通过旋涂或者印刷的方式形成电子传输层。
如图4所示，本申请实施例提供一种OLED显示面板，该OLED显示面板包括：
像素电极层131；
空穴注入层132，设置于所述像素电极层131上；
空穴传输层133，设置于所述空穴注入层132上；
发光层134，设置于所述空穴传输层133上；
电子传输层135，设置于所述发光层134上；
电子注入层136，设置于所述电子传输层135上；
公共电极层137，设置于所述电子注入层136上；
其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物。
在一种实施例中，采用氧化铟锡通过溅射制备像素电极层，制备所得的像素电极层的厚度为70纳米；然后在像素电极层上制备空穴注入层，通过采用喷墨打印的方式将具有PEDOT:PSS的空穴注入层溶液打印至像素电极层上，并通过干燥和烘烤成型，所述空穴注入层的厚度为40纳米；然后在空穴注入层上采用旋涂的方式将具有聚乙烯咔唑的空穴传输层溶液涂布在空穴注入层上，并通过干燥和烘烤成型，所述空穴传输层的厚度为20纳米；然后在空穴传输层上使用具有质量分数为60%的4，4'-二(9-咔唑)、质量分数为10%的三（2-苯基吡啶）合铱、质量分数为30%的无定型聚四氟乙烯的发光层溶液喷墨打印，并在空穴传输层上干燥和烘烤，得到发光层，所述发光层的厚度为60纳米；然后在发光层上使用具有2，7-双(二苯基氧膦基)-9，9'-螺二芴的溶液制备电子传输层，所述电子传输层的厚度为30纳米；然后使用氟化锂在电子传输层上制备电子注入层，所述电子注入层的厚度为1纳米；然后在电子注入层上使用氧化铟锌制备公共电极层，所述公共电极层的厚度为50纳米。
根据以上实施例可知：
本申请实施例提供一种OLED显示面板及其制备方法、OLED显示装置，该OLED显示面板包括衬底、驱动电路层、发光功能层和封装层，所述驱动电路层设置于所述衬底一侧，所述发光功能层设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层，所述封装层设置于所述发光功能层远离所述驱动电路层的一侧，其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物，在制备OLED显示面板时，通过使用有机主体材料、有机发光材料和无定型氟聚合物制成发光层，使得无定型聚合物提高了发光层的热稳定性和耐溶剂侵蚀性，使得在使用溶剂制备电子传输层时，由于发光层的耐溶剂侵蚀性提高，使得发光层不会被溶剂损伤，从而使得使用溶液制备OLED显示面板的膜层时，发光层不会受到损伤，进而使得可以通过全溶液制备OLED显示面板的有机层，且在使用全溶液制备有机层时，不会损伤OLED显示面板的膜层，从而解决了现有采用溶液加工OLED器件的过程存在损伤发光层，导致显示效果不良的技术问题。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，其包括：
    衬底；
    驱动电路层，设置于所述衬底一侧；
    发光功能层，设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层；
    封装层，设置于所述发光功能层远离所述驱动电路层的一侧；
    其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物。
  2. 如权利要求1所述的OLED显示面板，其中，所述发光层中的有机主体材料的质量分数范围包括10%至80%。
  3. 如权利要求2所述的OLED显示面板，其中，所述有机主体材料包括4，4'-二(9-咔唑)联苯、1，3-二咔唑-9-基苯、3，3'-二(9H-咔唑-9-基)-1，1'-联苯。
  4. 如权利要求1所述的OLED显示面板，其中，所述发光层中的有机发光材料的质量分数范围包括1%至30%。
  5. 如权利要求4所述的OLED显示面板，其中，所述有机发光材料包括二氯甲烷、三（2-苯基吡啶）合铱、2，4，5，6-四(9-咔唑基)-间苯二腈。
  6. 如权利要求1所述的OLED显示面板，其中，所述发光层中的无定型氟聚合物的质量分数范围包括5%至50%。
  7. 如权利要求6所述的OLED显示面板，其中，所述无定型氟聚合物包括无定型聚四氟乙烯。
  8. 如权利要求1所述的OLED显示面板，其中，所述发光层的厚度范围包括1纳米至100纳米。
  9. 如权利要求1所述的OLED显示面板，其中，所述电子传输层的材料包括有机小分子电子传输材料。
  10. 如权利要求9所述的OLED显示面板，其中，所述有机小分子电子传输材料包括2，7-双(二苯基氧膦基)-9，9'-螺二芴。
  11. 如权利要求9所述的OLED显示面板，其中，所述电子传输层的厚度范围包括1纳米至100纳米。
  12. 如权利要求1所述的OLED显示面板，其中，所述电子注入层的材料包括碱金属及其盐类、碱土金属及其盐类、金属配合物。
  13. 如权利要求12所述的OLED显示面板，其中，所述电子注入层的材料包括氟化锂。
  14. 如权利要求12所述的OLED显示面板，其中，所述电子注入层的厚度范围包括1纳米至100纳米。
  15. 如权利要求1所述的OLED显示面板，其中，所述公共电极层的材料包括氧化铟烯和氧化铟锌中的一种。
  16. 一种OLED显示装置，其包括OLED显示面板，所述OLED显示面板包括：
    衬底；
    驱动电路层，设置于所述衬底一侧；
    发光功能层，设置于所述驱动电路层远离所述衬底的一侧，沿远离所述衬底的方向上依次设置有像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层；
    封装层，设置于所述发光功能层远离所述驱动电路层的一侧；
    其中，所述发光层的材料包括有机主体材料、有机发光材料和无定型氟聚合物。
  17. 一种OLED显示面板的制备方法，其包括：
    提供衬底；
    在所述衬底上制备驱动电路层；
    在所述驱动电路层上制备像素电极层；
    在所述像素电极层上制备空穴注入层；
    在所述空穴注入层上制备空穴传输层；
    在所述空穴传输层上使用有机主体材料、有机发光材料和无定型氟聚合物制备发光层；
    在所述发光层上制备电子传输层；
    在所述电子传输层上制备电子注入层；
    在所述电子注入层上制备公共电极层，得到发光功能层，所述发光功能层包括像素电极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、公共电极层；
    在所述发光功能层上制备封装层。
  18. 如权利要求17所述的OLED显示面板的制备方法，其中，所述在空穴传输层上使用有机主体材料、有机发光材料和无定型氟聚合物制备发光层的步骤包括：
    提供有机主体材料、有机发光材料和无定型氟聚合物；
    将有机主体材料、有机发光材料和无定型氟聚合物与特定溶剂混合，得到发光层溶液；
    使用发光层溶液在空穴传输层上制备发光层。
  19. 如权利要求18所述的OLED显示面板的制备方法，其中，所述将有机主体材料、有机发光材料和无定型氟聚合物与特定溶剂混合，得到发光层溶液的步骤包括：
    提供氟系溶剂和芳香烃溶剂的混合物作为特定溶剂；
    将有机主体材料、有机发光材料和无定型氟聚合物溶解到氟系溶剂和芳香烃溶剂的混合物中，得到混合溶液；
    将得到的混合溶液在特定条件下进行处理，得到发光层溶液。
  20. 如权利要求18所述的OLED显示面板的制备方法，其中，所述使用发光层溶液在空穴传输层上制备发光层的步骤包括：
    将发光层溶液印刷到空穴传输层上；
    对发光层溶液进行干燥和烘烤，得到发光层。
PCT/CN2019/120467 2019-10-31 2019-11-25 Oled显示面板及其制备方法、oled显示装置 WO2021082125A1 (zh)

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