WO2021082048A1 - Oled器件及其制备方法 - Google Patents

Oled器件及其制备方法 Download PDF

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WO2021082048A1
WO2021082048A1 PCT/CN2019/116525 CN2019116525W WO2021082048A1 WO 2021082048 A1 WO2021082048 A1 WO 2021082048A1 CN 2019116525 W CN2019116525 W CN 2019116525W WO 2021082048 A1 WO2021082048 A1 WO 2021082048A1
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Prior art keywords
layer
hole
light
oled device
electron transport
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PCT/CN2019/116525
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English (en)
French (fr)
Inventor
魏锋
涂爱国
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/622,920 priority Critical patent/US11889739B2/en
Publication of WO2021082048A1 publication Critical patent/WO2021082048A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers

Definitions

  • the present disclosure relates to the field of display technology, in particular to an OLED device and a preparation method thereof.
  • Organic light-emitting diode also known as organic electroluminescence display
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • the OLED part usually includes: a substrate, an anode Anode provided on the substrate, and a hole injection layer (Hole injection layer) provided on the anode.
  • the various layers of OLED devices are produced by vacuum evaporation technology and inkjet printing technology, both of which have their own advantages and disadvantages.
  • the vacuum evaporation technology has disadvantages such as many metal masks and low material utilization.
  • the inkjet printing technology is difficult to make the thickness of the film forming the OLED device uniform, so the inkjet precision is very high.
  • the morphology of the pixel definition layer on the upper surface of the substrate will also affect the film thickness of the OLED device.
  • the pixel definition layer is provided with a pixel definition layer groove, and the OLED device is arranged in the pixel definition layer groove.
  • the film layer of the OLED device is prepared in the groove by means of inkjet printing, thereby completing the preparation process of the OLED device.
  • the grooves of the pixel definition layer have a certain slope, and the groove walls of the pixel definition layer are uneven, the grooves of the pixel definition layer will affect the accuracy of inkjet printing and cannot be printed on the slope.
  • the ink on the OLED device is evenly distributed, resulting in uneven film thickness of the OLED device, which leads to device problems such as uneven brightness and leakage current of the OLED device.
  • An object of the present disclosure is to provide an OLED device and a preparation method thereof, so as to solve the technical problems of many metal masks and low material utilization during the vacuum evaporation process of the OLED device.
  • Another object of the present disclosure is to provide an OLED device and a preparation method thereof.
  • the morphology of the pixel definition layer causes unevenness in the film layers of the subsequent formation of the OLED device, thereby causing device problems such as uneven brightness and leakage current of the OLED device.
  • the present disclosure provides an OLED device, including a light-emitting layer, an insulating layer, an electron transport layer, and an electron injection layer; the insulating layer is provided on the surface of one side of the light-emitting layer, and the insulating layer is provided with a through Hole, the through hole is arranged opposite to the middle of the light-emitting layer; the electron transport layer is arranged at the lower part of the through hole and attached to the surface of the light-emitting layer; and the electron injection layer is arranged on the through hole The upper part of the hole is attached to the surface of the electron transport layer away from the light-emitting layer.
  • the electron transport layer is attached to the bottom wall and the side wall of the lower part of the through hole; the electron injection layer is attached to the surface of the electron transport layer and the side wall of the upper part of the through hole.
  • the sum of the thickness of the electron transport layer and the thickness of the electron injection layer is less than or equal to the thickness of the insulating layer.
  • the thickness of the insulating layer is 11 to 35 nm.
  • the material of the insulating layer includes hole transport materials or electron blocking materials.
  • the OLED device further includes a substrate, an anode, a hole injection layer, and a hole transport layer; the anode is provided on the surface of one side of the substrate; the hole injection layer is provided on the anode away from the The surface on one side of the substrate; and the hole transport layer is provided on the surface of the hole injection layer away from the substrate; wherein the light-emitting layer is provided on the hole transport layer away from the substrate.
  • the surface of the side is provided on the surface of one side of the substrate; the hole injection layer is provided on the anode away from the The surface on one side of the substrate; and the hole transport layer is provided on the surface of the hole injection layer away from the substrate; wherein the light-emitting layer is provided on the hole transport layer away from the substrate. The surface of the side.
  • the OLED device further includes a cathode and a light extraction layer, the cathode is provided on the electron injection layer and the surface of the insulating layer far away from the anode; the light extraction layer is provided on the cathode The surface on the side away from the anode.
  • an OLED device manufacturing method includes the following steps: a light-emitting layer preparation step, preparing a light-emitting layer; an insulating layer preparation step, preparing an insulating layer on the upper surface of the light-emitting layer, and the insulating layer forms a through hole;
  • the through hole is arranged opposite to the middle of the light-emitting layer;
  • the electron transport layer preparation step is to fill the lower part of the through hole to form an electron transport layer, and the electron transport layer is attached to the upper surface of the light-emitting layer;
  • electron injection In the layer preparation step, the upper part of the through hole is filled to form an electron injection layer, and the electron injection layer is attached to the upper surface of the electron transport layer.
  • the electron transport layer is attached to the bottom wall and the sidewall of the lower part of the through hole; in the step of preparing the electron injection layer, the electron injection layer is attached On the surface of the electron transport layer and the sidewall of the upper part of the through hole.
  • the light-emitting layer preparation step the light-emitting layer is prepared by inkjet printing, and the light-emitting layer is subjected to air extraction drying treatment; in the insulating layer preparation step, a metal mask is used for vapor deposition
  • the electron transport layer is prepared by inkjet printing or full vapor deposition
  • the inkjet printing method or full vapor deposition is adopted.
  • the electron injection layer is prepared by evaporation.
  • the technical effect of the present disclosure is to provide an OLED device and a preparation method thereof.
  • An insulating layer is provided in the OLED device for printing the pixels of each film layer of the OLED device, and the pixel area can be accurately defined to ensure uniform light emission of the OLED device. Prevent the leakage current of the OLED device, and improve the yield of the OLED device.
  • FIG. 1 is a schematic diagram of the structure of the OLED device described in Example 1;
  • FIG. 2 is a schematic diagram of the structure of the OLED device described in Embodiment 1 provided on a substrate;
  • FIG. 3 is a flow chart of the manufacturing method of the OLED device described in Example 1.
  • FIG. 3 is a flow chart of the manufacturing method of the OLED device described in Example 1.
  • this embodiment provides an OLED device, which includes a substrate 10, an anode 1, a hole injection layer 2, a hole transport layer 3, a light emitting layer 4, an insulating layer 5, an electron transport layer 6, and electrons.
  • the upper surface of the substrate 10 is provided with a concave and convex pixel definition layer 100, and the pixel definition layer 100 includes a plurality of pixel grooves 110.
  • the anode 1 is attached to the upper surface of the substrate 10 and is located in the pixel groove 110.
  • the material of the anode 1 is preferably one of indium tin oxide, indium zinc oxide, silver, and aluminum, and its thickness is 50 to 200 nm.
  • a patterned anode 1 is prepared on the upper surface of the array substrate by using a sputtering film forming process and a yellow light process.
  • the hole injection layer 2 is arranged on the upper surface of the anode 1 and is made of ink and has a thickness of 15-30 nm. Inkjet printing is used to drop ink into the OLED pixels, and then the ink is exhausted and dried to form a hole injection layer 2.
  • the hole transport layer 3 is arranged on the upper surface of the hole injection layer 2, and is made of ink and has a thickness of 10-20 nm.
  • the ink is dropped into the OLED pixels in an inkjet printing method, and then the ink is exhausted and dried to form the hole transport layer 3.
  • the light-emitting layer 4 is arranged on the upper surface of the hole transport layer 3, the material is ink, and the thickness is 30-80 nm.
  • the red, green, and blue inks are respectively dropped into the OLED pixels by inkjet printing, and then the light-emitting layer 4 is exhausted and dried, and finally red sub-pixels, green sub-pixels, and blue sub-pixels are formed, so that the display panel has The function of visualization.
  • the insulating layer 5 is provided on the upper surface of the light-emitting layer 4, the insulating layer 5 is provided with a through hole 101, and the through hole 101 is arranged opposite to the middle of the light-emitting layer 4.
  • the material of the insulating layer 5 includes hole transport materials or electron blocking materials.
  • the hole transport materials and the electron blocking materials are organic insulating materials, which can effectively control the light-emitting area and the voltage of the OLED device.
  • the insulating layer 5 is formed on the edge of each sub-pixel by using a metal mask evaporation method, and the thickness is 11-35 nm, preferably 20 nm, 25 nm, 28 nm, and 29 nm.
  • the material of the insulating layer 5 can be the same as the material of the pixel defining layer 100, as long as it can ensure uniform light emission of the pixels.
  • the electron transport layer 6 is provided at the lower part of the through hole 101 and attached to the upper surface of the light-emitting layer 4.
  • an inkjet printing method or a full vapor deposition method is used to drop ink into the OLED pixels to form an electron transport layer 6 with a thickness of 10-30 nm.
  • the electron injection layer 7 is provided on the upper part of the through hole 101 and attached to the electron transport layer 6.
  • ink is dropped into the OLED pixel by inkjet printing or full vapor deposition to form an electron injection layer 7 with a thickness of 1 to 5 nm.
  • the cathode 8 is provided on the upper surface of the electron injection layer 7 and the insulating layer 5.
  • the material of the cathode 8 includes but is not limited to silver, transparent conductive binary oxide (IZO), and the thickness is 10-20 nm.
  • the light extraction layer 9 is provided on the upper surface of the cathode 8.
  • the material of the light extraction layer 9 is an organic material, and its thickness is 40-100 nm.
  • the light extraction layer 9 has a relatively high refractive index, the refractive index can reach 1.77 to 1.85, and the luminous efficiency can reach 33 to 41 cd/A. It is an excellent OLED material.
  • the width of the insulating layer 5 is designed according to the pixel structure of the OLED device, and its width is generally 1 ⁇ 5um.
  • the sum of the thickness of the electron transport layer 6 and the thickness of the electron injection layer 7 is less than or equal to the insulating layer.
  • the thickness of the layer 5 can enable the insulating layer 5 to effectively define the OLED light-emitting pixels.
  • the inner side wall of a pixel groove 110 is provided with two insulating layers 5, and the width of the two insulating layers 5 is smaller than the width of the bottom wall of the pixel groove 110.
  • the width of the two insulating layers 5 is 3 ⁇ 10um smaller than the width of the bottom wall of the pixel groove 110.
  • this embodiment provides an OLED device.
  • an insulating layer in the OLED device it is not necessary to consider the slope of the pixel groove of the pixel definition layer to affect the uneven film thickness of the OLED device, which causes the pixel to emit light. Phenomenon such as uniformity and defective devices.
  • An insulating layer is provided in the OLED device for printing the pixels of each film layer of the OLED device, and the pixel area can be accurately defined, thereby ensuring uniform light emission of the OLED device, preventing leakage current of the OLED device, and improving the yield of the OLED device.
  • this embodiment also provides a method for manufacturing an OLED device, including the following steps S1) to S9).
  • an anode is prepared.
  • a patterned anode is prepared on the upper surface of a substrate by using a sputtering film forming process and a yellowing process.
  • the upper surface of the substrate is provided with a concave and convex pixel definition layer, and the pixel definition layer includes a plurality of pixel grooves.
  • the anode is attached to the upper surface of the substrate and is located in the pixel groove.
  • the material of the anode is preferably one of indium tin oxide, indium zinc oxide, silver, and aluminum, and its thickness is 50-200 nm.
  • a hole injection layer is prepared on the upper surface of the anode. Specifically, the ink is dropped into the OLED pixels by means of inkjet printing, and then the ink is exhausted and dried to form a hole injection layer.
  • the material of the hole injection layer is ink, and the thickness is 15-30 nm.
  • the step of preparing a hole transport layer in which a hole transport layer is prepared on the hole injection layer. Specifically, the ink is dropped into the OLED pixels by means of inkjet printing, and then the ink is subjected to air extraction and drying treatment to form a hole transport layer.
  • the material of the hole transport layer is ink, and the thickness is 10-20 nm.
  • the light-emitting layer preparation step is to prepare a light-emitting layer. Specifically, the light-emitting layer is prepared by inkjet printing, and the light-emitting layer is subjected to air extraction and drying treatment;
  • the material is ink, and the thickness is 30 ⁇ 80nm.
  • the red, green, and blue inks are respectively dropped into the OLED pixels by inkjet printing, and then the light-emitting layer 4 is exhausted and dried, and finally red sub-pixels, green sub-pixels, and blue sub-pixels are formed, so that the display panel has The function of visualization.
  • the insulating layer preparation step an insulating layer is prepared on the upper surface of the light-emitting layer, the insulating layer forms a through hole, and the through hole is arranged opposite to the middle of the light-emitting layer.
  • the insulating layer is prepared on the upper surface of the light-emitting layer by using a metal mask evaporation method.
  • the material of the insulating layer includes hole-transporting materials or electron-blocking materials, and the hole-transporting materials and the electron-blocking materials are organic insulating materials, which can effectively control the light-emitting area and the voltage of the OLED device.
  • the thickness of the insulating layer 5 is 11 to 35 nm, preferably 20 nm, 25 nm, 28 nm, and 29 nm.
  • the step of preparing the electron transport layer filling the lower part of the through hole to form an electron transport layer, and the electron transport layer is attached to the upper surface of the light-emitting layer.
  • the electron transport layer is attached to the bottom wall and the side wall of the lower part of the through hole.
  • ink is dropped into the OLED pixel by an inkjet printing method or a full vapor deposition method to form the electron transport layer with a thickness of 10-30 nm.
  • the step of preparing an electron injection layer filling the upper part of the through hole to form an electron injection layer, and the electron injection layer is attached to the upper surface of the electron transport layer.
  • an inkjet printing method or a full vapor deposition method is used to drop ink into the OLED pixels to form the electron injection layer.
  • the electron injection layer is attached to the surface of the electron transport layer and the sidewall of the upper part of the through hole.
  • the material of the electron injection layer is ink or organic material, and the thickness is 1 to 5 nm.
  • the width of the insulating layer in this embodiment is designed according to the pixel structure of the OLED device, and its width is generally 1 ⁇ 5um.
  • the sum of the thickness of the electron transport layer and the thickness of the electron injection layer is less than or equal to that of the insulating layer.
  • the thickness can enable the insulating layer to effectively define the OLED light-emitting pixels.
  • Two insulating layers are provided on the inner side wall of a pixel groove, and the width of the two insulating layers is smaller than the width of the bottom wall of the pixel groove.
  • the width of the two insulating layers is 3 ⁇ 10um smaller than the width of the bottom wall of the pixel groove.
  • the pixels of each film layer of the OLED device are ensured to be uniform, and the pixel distribution at the edge of each film layer is prevented Non-uniformity, thereby preventing problems such as short circuit or leakage current of the OLED device.
  • a cathode preparation step preparing a cathode on the upper surface of the electron injection layer and the insulating layer.
  • the material of the cathode 8 includes but is not limited to silver, transparent conductive binary oxide (IZO), and the thickness is 10-20 nm.
  • the light extraction layer preparation step the light extraction layer is prepared on the upper surface of the cathode.
  • the material of the light extraction layer is an organic material, and its thickness is 40-100 nm.
  • the light extraction layer has a relatively high refractive index, the refractive index can reach 1.77 to 1.85, and the luminous efficiency can reach 33 to 41 cd/A, and it is an excellent OLED material.
  • This embodiment provides a method for preparing an OLED device.
  • the OLED device adopts a combination of inkjet printing and vacuum evaporation methods, which can avoid the disadvantages of vacuum evaporation technology or inkjet printing technology, and make use of their respective technical advantages.
  • the process window improves the feasibility of mass production of the device;
  • the insulating layer is set in the OLED device to print the pixels of each film layer of the OLED device, and the pixel area can be accurately defined to ensure the uniform light emission of the OLED device and prevent the OLED device Generate leakage current and improve the yield of OLED devices.

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  • Optics & Photonics (AREA)
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Abstract

一种OLED器件及其制备方法，所述OLED器件包括发光层（4）、绝缘层（5）、电子传输层（6）以及电子注入层（7）；所述绝缘层（5）设于所述发光层（4）一侧的表面，所述绝缘层（5）设有通孔（101），所述通孔（101）与所述发光层（4）中部相对设置；所述电子传输层（6）设于所述通孔（101）的下部，且贴附于所述发光层（4）表面；以及所述电子注入层（7）设于所述通孔（101）的上部，且贴附于所述电子传输层（6）远离所述发光层（4）一侧的表面。

Description

OLED器件及其制备方法 技术领域
本揭示涉及显示技术领域，尤其涉及一种OLED器件及其制备方法。
 背景技术
有机发光二极管（Organic Light-Emitting Diode，OLED）显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、宽视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
在AMOLED器件中， OLED部分通常包括：基板、设于基板上的阳极Anode、设于阳极上的空穴注入层（Hole injection layer，HIL）、设于空穴注入层上的空穴传输层（Hole transport layer，HTL）、设于空穴传输层上的发光层EML（Emitting Light）、设于发光层上的电子传输层（Electron transport layer，ETL）、设于电子传输层上的电子注入层（Electron injection layer，EIL）及设于电子注入层上的阴极Cathode，设于阴极层上的光取出层Cap。
目前，OLED器件的各层制作工艺有真空蒸镀技术和喷墨打印技术，这两种技术都有各自的优缺点。其中，真空蒸镀技术存在金属掩膜板多、材料利用率低等缺点。喷墨打印技术难以使得形成OLED器件的膜层厚度均一，因此对喷墨精度要求甚高。此外，基板上表面的像素定义层的形貌也会影响OLED器件的膜厚。像素定义层设有像素定义层凹槽，OLED器件设于像素定义层凹槽内。在喷墨打印OLED器件的膜层过程中，通过采用喷墨打印的方式在凹槽内制备膜层，从而完成OLED器件的制备工艺。但由于像素定义层凹槽具有一定的坡度，且所述像素定义层的槽壁上凹凸不平，因此，所述像素定义层凹槽会影响喷墨打印的精度，无法使得被喷墨打印在坡度上的墨水均匀分布，导致OLED器件的膜层厚度不均一，从而导致OLED器件亮度不均、漏电流等器件问题。
 技术问题
本揭示的一个目的在于，提供一种OLED器件及其制备方法，以解决OLED器件在真空蒸镀过程中存在金属掩膜板多、材料利用率低的技术问题。
本揭示的另一个目的在于，提供一种OLED器件及其制备方法，像素定义层的形貌导致后续形成OLED器件的膜层不均一，从而导致OLED器件亮度不均、漏电流等器件问题。
 技术解决方案
为实现上述目的，本揭示提供一种OLED器件，包括发光层、绝缘层、电子传输层以及电子注入层；所述绝缘层设于所述发光层一侧的表面，所述绝缘层设有通孔，所述通孔与所述发光层中部相对设置；所述电子传输层设于所述通孔的下部，且贴附于所述发光层表面；以及所述电子注入层设于所述通孔的上部，且贴附于所述电子传输层远离所述发光层一侧的表面。
进一步地，所述电子传输层贴附于所述通孔下部的底壁和侧壁；所述电子注入层贴附于所述电子传输层表面和所述通孔上部的侧壁。
进一步地，所述电子传输层的厚度与所述电子注入层的厚度之和小于或等于所述绝缘层的厚度。
进一步地，所述绝缘层的厚度为11~35nm。
进一步地，所述绝缘层的材质包括空穴传输类材料或电子阻挡类材料。
进一步地，所述的OLED器件还包括基板、阳极、空穴注入层以及空穴传输层；所述阳极设于所述基板一侧的表面；所述空穴注入层设于所述阳极远离所述基板一侧的表面；以及所述空穴传输层设于所述空穴注入层远离所述基板一侧的表面；其中，所述发光层设于所述空穴传输层远离所述基板一侧的表面。
进一步地，所述的OLED器件还包括阴极以及光取出层，所述阴极设于所述电子注入层及所述绝缘层远离所述阳极一侧的表面；所述光取出层设于所述阴极远离所述阳极一侧的表面。
进一步地，一种OLED器件制备方法，包括如下步骤：发光层制备步骤，制备一发光层；绝缘层制备步骤，在所述发光层上表面制备一绝缘层，所述绝缘层形成通孔，所述通孔与所述发光层中部相对设置；电子传输层制备步骤，填充所述通孔的下部，形成一电子传输层，所述电子传输层贴附所述发光层的上表面；以及电子注入层制备步骤，填充所述通孔的上部，形成一电子注入层，所述电子注入层贴附于所述电子传输层上表面。
进一步地，在所述电子传输层制备步骤中，所述电子传输层贴附于所述通孔下部的底壁和侧壁；在所述电子注入层制备步骤中，所述电子注入层贴附于所述电子传输层表面和所述通孔上部的侧壁。
进一步地，在所述发光层制备步骤中，采用喷墨打印方式制备发光层，并对所述发光层进行抽气烘干处理；在所述绝缘层制备步骤中，采用金属掩膜板蒸镀方式制备所述绝缘层；在所述电子传输层制备步骤中，采用喷墨打印方式或全蒸镀制备所述电子传输层；在所述电子注入层制备步骤中，采用喷墨打印方式或全蒸镀方式制备所述电子注入层。
 有益效果
本揭示的技术效果在于，提供一种OLED器件及其制备方法，在OLED器件中设置绝缘层，用于打印OLED器件各膜层的像素，可以精确定义像素区域，从而确保OLED器件的发光均一，防止OLED器件产生漏电流，提升OLED器件的良率。
 附图说明
为了更清楚地说明本揭示实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本揭示的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为实施例1所述OLED器件的结构示意图；
图2为实施例1所述OLED器件设于基板上的结构示意图；
图3为实施例1所述OLED器件的制备方法的流程图。
附图部件标识如下：
1阳极；2空穴注入层；
3空穴传输层；4发光层；
5绝缘层；6电子传输层；7电子注入层；
8阴极；9光取出层；10基板；100像素定义层；110像素槽；
101通孔。
本揭示的实施方式
以下参考说明书附图介绍本揭示的优选实施例，用以举例证明本揭示可以实施，这些实施例可以向本领域中的技术人员完整介绍本揭示的技术内容，使得本揭示的技术内容更加清楚和便于理解。然而本揭示可以通过许多不同形式的实施例来得以体现，本揭示的保护范围并非仅限于文中提到的实施例。
如图1~2所示，本实施例提供一种OLED器件，包括基板10、阳极1、空穴注入层2、空穴传输层3、发光层4、绝缘层5、电子传输层6、电子注入层7、阴极8以及光取出层9。
基板10上表面设有凹凸起伏的像素定义层100，像素定义层100包括多个像素槽110。
阳极1，贴附基板10上表面，位于像素槽110内。阳极1的材质优选为氧化铟锡、氧化铟锌、银、铝中的一种，其厚度为50~200nm。其中，采用溅射成膜工艺及黄光工艺在所述阵列基板上表面制备图案化的阳极1。
空穴注入层2设于阳极1上表面，其材质为墨水，厚度为15~30nm。采用喷墨打印方式将墨水滴入OLED像素，然后对所述墨水进行抽气烘干处理，形成空穴注入层2。
空穴传输层3设于所述空穴注入层2上表面，其材质为墨水，厚度为10~20nm。采用喷墨打印方式将墨水滴入OLED像素，然后对所述墨水进行抽气烘干处理，形成空穴传输层3。
发光层4设于空穴传输层3上表面，其材质为墨水，厚度为30~80nm。采用喷墨打印方式将红、绿、蓝墨水分别滴入OLED像素，然后对发光层4进行抽气烘干处理，最后形成红色子像素、绿色子像素、蓝色子像素，从而使得显示面板具有显像的功能。
绝缘层5设于发光层4上表面，绝缘层5设有通孔101，通孔101与发光层4中部相对设置。绝缘层5的材质包括空穴传输类材料或电子阻挡类材料，所述空穴传输类材料与所述电子阻挡类材料为有机绝缘材料，可以有效控制发光区域及OLED器件电压。采用金属掩膜板蒸镀方式在各子像素边缘制作绝缘层5，其厚度为11~35nm，优选为20 nm、25 nm、28 nm、29 nm。本实施例中，绝缘层5材质可以与像素定义层100的材质一样，只要能起到保证像素发光均一即可。
电子传输层6设于通孔101的下部，且贴附于发光层4的上表面。在通孔101的下部采用喷墨打印方式或采用全蒸镀方式将墨水滴入OLED像素，形成厚度为10~30nm的电子传输层6。
电子注入层7设于通孔101的上部，且贴附于电子传输层6。在通孔101的上部采用喷墨打印方式或采用全蒸镀方式将墨水滴入OLED像素，形成厚度为1~5nm的电子注入层7。
阴极8设于电子注入层7及绝缘层5的上表面。阴极8材质包括但不限于银、透明导电二元氧化物（IZO），厚度10~20nm。
光取出层9设于阴极8的上表面。光取出层9的材质为有机材料，其厚度为40~100nm。光取出层9具有较高的折射率，折射率可达到1.77～1.85，发光效率可达到33～41cd/A，是一种优异的OLED材料。
本实施例中，绝缘层5的宽度根据OLED器件像素结构设计，其宽度一般为1~5um，所述电子传输层6的厚度与所述电子注入层7的厚度之和小于或等于所述绝缘层5的厚度，可以使得所述绝缘层5有效定义OLED发光像素。从图2可以看出，一像素槽110内侧壁设有两绝缘层5，两绝缘层5的宽度小于像素槽110的底壁宽度。优选地，两绝缘层5的宽度比像素槽110的底壁宽度小3~10um，在打印像素的过程中，保证OLED器件各膜层的像素均一，防止各膜层边缘处的像素分布不均匀，从而防止OLED器件发生短路或漏电流等问题。
与现有技术相比，本实施例提供一种OLED器件，通过在OLED器件内设置绝缘层，可以不用考虑像素定义层的像素槽的坡度影响OLED器件的膜层厚度不均匀，导致像素发光不均一及器件不良等现象。在OLED器件中设置绝缘层，用于打印OLED器件各膜层的像素，可以精确定义像素区域，从而确保OLED器件的发光均一，防止OLED器件产生漏电流，提升OLED器件的良率。
如图3所示，本实施例还提供一种OLED器件制备方法，包括如下步骤S1）~S9）。
S1）阳极制备步骤，制备一阳极。通常地，采用溅射成膜工艺及黄光工艺在一基板上表面制备图案化的阳极。所述基板上表面设有凹凸起伏的像素定义层，所述像素定义层包括多个像素槽。所述阳极贴附所述基板上表面，位于所述像素槽内。所述阳极的材质优选为氧化铟锡、氧化铟锌、银、铝中的一种，其厚度为50~200nm。
S2）空穴注入层制备步骤，在所述阳极上表面制备一空穴注入层。具体地，采用喷墨打印方式将墨水滴入OLED像素，然后对所述墨水进行抽气烘干处理，形成空穴注入层。所述空穴注入层的材质为墨水，厚度为15~30nm。
S3）空穴传输层制备步骤，在所述空穴注入层制备一空穴传输层。具体地，采用喷墨打印方式将墨水滴入OLED像素，然后对所述墨水进行抽气烘干处理，形成空穴传输层。所述空穴传输层的材质为墨水，厚度为10~20nm。
S4）发光层制备步骤，制备一发光层。具体地，采用喷墨打印方式制备发光层，并对所述发光层进行抽气烘干处理；
其材质为墨水，厚度为30~80nm。采用喷墨打印方式将红、绿、蓝墨水分别滴入OLED像素，然后对发光层4进行抽气烘干处理，最后形成红色子像素、绿色子像素、蓝色子像素，从而使得显示面板具有显像的功能。
S5）绝缘层制备步骤，在所述发光层上表面制备一绝缘层，所述绝缘层形成通孔，所述通孔与所述发光层中部相对设置。具体地，采用金属掩膜板蒸镀方式在所述发光层上表面制备所述绝缘层。所述绝缘层的材质包括空穴传输类材料或电子阻挡类材料，所述空穴传输类材料与所述电子阻挡类材料为有机绝缘材料，可以有效控制发光区域及OLED器件电压。绝缘层5厚度为11~35nm，优选为20 nm、25 nm、28 nm、29 nm。
S6）电子传输层制备步骤，填充所述通孔的下部，形成一电子传输层，所述电子传输层贴附所述发光层的上表面。所述电子传输层贴附于所述通孔下部的底壁和侧壁。在所述通孔下部采用喷墨打印方式或全蒸镀方式将墨水滴入OLED像素，形成厚度为10~30nm的所述电子传输层。
S7）电子注入层制备步骤，填充所述通孔的上部，形成一电子注入层，所述电子注入层贴附于所述电子传输层上表面。具体地，采用喷墨打印方式或全蒸镀方式将墨水滴入OLED像素，形成所述电子注入层。所述电子注入层贴附于所述电子传输层表面和所述通孔上部的侧壁。所述电子注入层的材质为墨水或有机材料，厚度为1~5nm。
本实施例中所述绝缘层的宽度根据OLED器件像素结构设计，其宽度一般为1~5um，所述电子传输层的厚度与所述电子注入层的厚度之和小于或等于所述绝缘层的厚度，可以使得所述绝缘层有效定义OLED发光像素。在一像素槽的内侧壁设有两所述绝缘层，两所述绝缘层的宽度小于所述像素槽的底壁宽度。优选地，所述两绝缘层的宽度比所述像素槽的底壁宽度小3~10um，在打印像素的过程中，保证OLED器件各膜层的像素均一，防止各膜层边缘处的像素分布不均匀，从而防止OLED器件发生短路或漏电流等问题。
S8）阴极制备步骤，在所述电子注入层及所述绝缘层上表面制备阴极。阴极8材质包括但不限于银、透明导电二元氧化物（IZO），厚度10~20nm。
S9）光取出层制备步骤，在所述阴极上表面制备光取出层。所述光取出层的材质为有机材料，其厚度为40~100nm。所述光取出层具有较高的折射率，折射率可达到1.77～1.85，发光效率可达到33～41cd/A，是一种优异的OLED材料。
本实施例提供一种OLED器件制备方法，一方面，OLED器件采用喷墨打印及真空蒸镀方式结合，可以规避真空蒸镀技术或者喷墨打印技术各自的缺点，发挥各自技术优势，放大器件制作工艺窗口，提高器件量产可行性；另一方面，在OLED器件中设置绝缘层，用于打印OLED器件各膜层的像素，可以精确定义像素区域，从而确保OLED器件的发光均一，防止OLED器件产生漏电流，提升OLED器件的良率。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种OLED器件，其中，包括：
    发光层；
    绝缘层，设于所述发光层一侧的表面，所述绝缘层设有通孔，所述通孔与所述发光层中部相对设置；
    电子传输层，设于所述通孔的下部，且贴附于所述发光层表面；以及
    电子注入层，设于所述通孔的上部，且贴附于所述电子传输层远离所述发光层一侧的表面。
  2. 如权利要求1所述的OLED器件，其中，
    所述电子传输层贴附于所述通孔下部的底壁和侧壁；
    所述电子注入层贴附于所述电子传输层表面和所述通孔上部的侧壁。
  3. 如权利要求1所述的OLED器件，其中，
    所述电子传输层的厚度与所述电子注入层的厚度之和小于或等于所述绝缘层的厚度。
  4. 如权利要求1所述的OLED器件，其中，
    所述绝缘层的厚度为11~35nm。
  5. 如权利要求1所述的OLED器件，其中，
    所述绝缘层的材质包括空穴传输类材料或电子阻挡类材料。
  6. 如权利要求1所述的OLED器件，其中，还包括
    基板；
    阳极，设于所述基板一侧的表面；
    空穴注入层，设于所述阳极远离所述基板一侧的表面；以及
    空穴传输层，设于所述空穴注入层远离所述基板一侧的表面；
    其中，所述发光层设于所述空穴传输层远离所述基板一侧的表面。
  7. 如权利要求1所述的OLED器件，其中，还包括
    阴极，设于所述电子注入层及所述绝缘层远离所述基板一侧的表面；以及
    光取出层，设于所述阴极远离所述基板一侧的表面。
  8. 一种OLED器件制备方法，其中，包括如下步骤：
    发光层制备步骤，制备一发光层；
    绝缘层制备步骤，在所述发光层上表面制备一绝缘层，所述绝缘层形成通孔，所述通孔与所述发光层中部相对设置；
    电子传输层制备步骤，填充所述通孔的下部，形成一电子传输层，所述电子传输层贴附所述发光层的上表面；以及
    电子注入层制备步骤，填充所述通孔的上部，形成一电子注入层，所述电子注入层贴附于所述电子传输层上表面。
  9. 如权利要求8所述的OLED器件制备方法，其中，
    在所述电子传输层制备步骤中，
    所述电子传输层贴附于所述通孔下部的底壁和侧壁；
    在所述电子注入层制备步骤中，所述电子注入层贴附于所述电子传输层表面和所述通孔上部的侧壁。
  10.    如权利要求8所述的OLED器件制备方法，其中，
    在所述发光层制备步骤中，采用喷墨打印方式制备发光层，并对所述发光层进行抽气烘干处理；
    在所述绝缘层制备步骤中，采用金属掩膜板蒸镀方式制备所述绝缘层；
    在所述电子传输层制备步骤中，采用喷墨打印方式或全蒸镀制备所述电子传输层；
    在所述电子注入层制备步骤中，采用喷墨打印方式或全蒸镀制备所述电子注入层。
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