WO2021079403A1 - Structure de guide d'ondes optique enterrée et son procédé de production - Google Patents

Structure de guide d'ondes optique enterrée et son procédé de production Download PDF

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Publication number
WO2021079403A1
WO2021079403A1 PCT/JP2019/041297 JP2019041297W WO2021079403A1 WO 2021079403 A1 WO2021079403 A1 WO 2021079403A1 JP 2019041297 W JP2019041297 W JP 2019041297W WO 2021079403 A1 WO2021079403 A1 WO 2021079403A1
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optical waveguide
core
layer
wafer
embedded optical
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PCT/JP2019/041297
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English (en)
Japanese (ja)
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信建 小勝負
藤原　裕士
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日本電信電話株式会社
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Priority to PCT/JP2019/041297 priority Critical patent/WO2021079403A1/fr
Publication of WO2021079403A1 publication Critical patent/WO2021079403A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method

Definitions

  • the present invention relates to an optical waveguide structure, particularly a structure of an embedded optical waveguide that can be used in the visible light band at low cost and a method for producing the same. It relates to an optical waveguide for a planar optical circuit that can be used not only in the entire visible light band but also in the near-ultraviolet to near-infrared region. It can be used for ultra-broadband optical communication from light and visible light to the near-infrared light region.
  • PLC board for optical communication In conventional PLCs for optical communication, a silicon wafer (Si wafer) with an oxide film having an oxide film formed on the surface has been widely used as a substrate for production.
  • Si wafers used in semiconductors are made of silicon with a purity of 99.999999999% (11N) or higher, and are used in CMOS (Complementary metal-oxide-semiconductor) processes, etc. Many are relatively inexpensive. It is also because there are few impurities and dust, the area is relatively large, the surface is smooth, and a silicon dioxide (SiO 2 ) film can be formed by surface oxidation.
  • CMOS Complementary metal-oxide-semiconductor
  • Si wafer is naturally oxidized in the atmosphere and its surface is covered with a very thin SiO 2 film.
  • the adhesion between the Si of the substrate and the SiO 2 film formed on the substrate is strong.
  • a thick, dense and stable thermal oxide Si film SiO 2 film
  • the melting point of Si is 1412 ° C., but the melting point of SiO 2 is 1732 ° C., and the thermally oxidized Si coating has very high heat resistance.
  • the thermally oxidized Si film is used. It has the characteristic of forming a very excellent insulating film, and can be said to be a very excellent material.
  • FIG. 1 (Conventional method for manufacturing PLC for optical communication)
  • the manufacturing method as shown in FIG. 1 has been performed.
  • thermal oxide Si layers 2a and 2b are formed on both surfaces of the substrate 1 of the Si wafer, and one of them is used as the lower clad layer 2a.
  • Ge-doped SiO 2 is laminated on the lower clad layer 2a to form the optical waveguide core layer 3.
  • the upper clad layer 4 is sequentially formed, the optical waveguide core layer 3 is embedded, and the PLC of the embedded optical waveguide structure is formed.
  • each layer is formed in sequence, the film formation temperature of each lower clad layer 2a, core layer 3, and upper clad layer 4 is very important.
  • the film formation temperature of the upper clad layer 4 to be finally formed is higher than the melting point of the core layer 3, the structure of the core layer 3 produced at the time of film formation of the upper clad layer 4 is in the upper clad layer 4.
  • the embedded optical waveguide structure disappears.
  • the thermal oxide Si film 2a has a lower refractive index than the Ge-doped SiO 2 which is the core layer 3, and therefore becomes a lower clad layer.
  • a flame deposition method FHD: Flame Hydrolysis Deposition
  • CVD Chemical Vapor Deiposition
  • thermal CVD Thermal CVD
  • plasma CVD Plasma CVD
  • a Ge-doped SiO 2 core layer 3 in which the refractive index of the optical waveguide is adjusted is formed, and a ridge-shaped optical waveguide core 3 is formed by photolithography and plasma dry etching using a fluorine-based plasma such as CF 4.
  • a fluorine-based plasma such as CF 4.
  • pure fused silica glass As shown in [Non-Patent Document 5], pure fused silica glass (Fused Silica glass) has very excellent light transmittance from about 200 nm to about 2500 nm, excluding the light absorption factor due to defects. There is.
  • the present invention has been made in view of this situation, and an object of the present invention is to maintain compatibility with a CMOS process, that is, while using a Si wafer, from near-ultraviolet light to visible light, and further to near-infrared light.
  • the purpose is to produce an optical waveguide having excellent light transmission in the entire range up to the light band (for example, 300 nm to 1700 nm).
  • CMOS device on the surface of the Si wafer, which not only enables mass production at low cost, but also allows it to be used in the ultraviolet to near-infrared light region. It has a feature that an integrated device with a light receiving element such as a Si photodiode can also be manufactured.
  • a Si wafer as a substrate, a thermally oxidized Si core, It has an upper clad layer and a lower clad layer that directly sandwich and support the thermally oxidized Si core vertically.
  • An embedded optical waveguide structure characterized in that the thermally oxidized Si core is located at a distance from the Si wafer serving as a substrate.
  • (Structure 3) A two-layer structure characterized in that the two embedded optical waveguide structures according to the configuration 1 have a two-layer structure in which two embedded optical waveguide structures are arranged back to back on the side of the upper clad layer with a spacer interposed therebetween and are aligned and joined. Embedded optical waveguide structure.
  • the support substrate has a light-receiving element that photocouples to the optical waveguide, and has a composite type embedded optical waveguide structure that also has a light-receiving function as well as structural reinforcement.
  • a step of forming a thermal oxide Si layer on the upper surface of a Si wafer to be a substrate The step of etching the thermal oxide Si layer to form the thermal oxide Si core layer of the optical waveguide, A step of forming an upper clad layer having a refractive index lower than that of the thermally oxidized Si core layer on the thermally oxidized Si core layer, A step of partially etching and removing the Si wafer in a portion corresponding to the lower side of the thermal oxide Si core layer until the thermal oxide Si core layer is separated from the remaining portion of the Si wafer serving as a substrate. A step of forming a lower clad layer having a low refractive index under the thermally oxidized Si core layer is provided.
  • An embedded optical waveguide structure characterized in that the thermally oxidized Si core is directly sandwiched and supported vertically by the upper clad layer and the lower clad layer to produce a structure located at a distance from the Si wafer as a substrate. Manufacturing method.
  • a method for producing an embedded optical waveguide structure according to the present invention wherein the method for producing an embedded optical waveguide structure further includes a step of joining a support substrate on the upper clad layer.
  • (Structure 8) A method for manufacturing a composite embedded optical waveguide structure, which further comprises a step of manufacturing a light receiving element that photocouples to the optical waveguide on the support substrate in the method for manufacturing the embedded optical waveguide structure of the configuration 6.
  • an optical waveguide element that combines and demultiplexes light over a wide band wavelength can be produced, and is used in various industrial fields such as medical treatment, bioanalysis, and display devices such as image projection. Is possible.
  • Si wafer First, a method for producing a Si wafer, which is a prerequisite, will be described. Quartz sand (main component is SiO 2 ) is ubiquitous on the earth, but in order to efficiently obtain high-purity Si, high-quality silica sand with few impurities is used as the raw material. When silica sand is mixed with coke (C) in an electric furnace at 1800 ° C., oxygen is combined with carbon and degassed to obtain metallic silicon (Si) having a purity of about 98% in a molten state.
  • the main impurities at this stage are Al (aluminum) and Fe (iron).
  • Trichlorosilicon is a liquid at room temperature and has a boiling point of 31.8 ° C, but it is continuously sent to a distillation column for purification.
  • liquid trichlorosilicon is vaporized and sent to a high-temperature reactor together with hydrogen gas, where it is decomposed to produce electronic-grade polysilicon (EGS) with a purity of about 99.99999999% (10N). obtain.
  • silicon single crystal ingots with a purity of 99.999999999% (11N) or more are produced by two methods, the zone melting method (FZ: floating zone) and the Czochralski method (CZ: Czochralski). To do.
  • the large swell over the entire surface of the wafer is ⁇ 20 to 25 ⁇ m or less, and locally at the atomic level.
  • a Si wafer that maintains smoothness can be obtained.
  • thermal oxide Si film is formed on the surface of the Si wafer obtained above.
  • thermal oxidation of Si dry oxidation, wet oxidation, and steam oxidation, depending on the type of gas used for oxidation, and the thermal oxidation temperature is in the temperature range of about 800 to 1100 ° C.
  • Oxygen gas is used for dry oxidation
  • deionized steam is added to oxygen gas for wet oxidation
  • only deionized steam is used for steam oxidation.
  • steam (H 2 O) generated by natural combustion by flowing oxygen gas and hydrogen gas into the furnace is used.
  • the purity of the silicon itself to be oxidized can be controlled to be extremely high at 99.999999999% (11N) or more, and dopants such as phosphorus (P) and boron (B) are introduced to control the electrical resistance and semiconductor characteristics. If a high resistance silicon wafer is used, the influence of the dopant contained in the silicon substrate can be reduced. Furthermore, if the thermal oxidation environment is controlled in a clean room or the like, it is possible to limit the mixing of impurities into the thermal oxide film itself, so that the silicon oxide layer is caused by impurities, if not as much as pure fused silica glass. It is possible to reduce the light absorption derived from defects.
  • the Si wafer is a high-quality wafer substrate that is used in a very large amount in a CMOS process or the like, it is relatively inexpensive in terms of price. Therefore, in order to fabricate a wide-band optical waveguide from the ultraviolet band to the near-infrared light region at low cost, it is superior to using a thermally oxidized Si film as a core layer rather than pure fused silica glass.
  • the amorphous SiO 2 film can be produced not only by thermal oxidation but also by CVD (chemical vapor deposition) method, sputtering method, FHD (flame deposition) method, etc., but reduction and control of contamination of impurities
  • CVD chemical vapor deposition
  • sputtering method sputtering method
  • FHD flame deposition
  • the thermally oxidized Si film is produced by surface oxidation of a high-purity Si single crystal, although slight point defects (bonding defects) and oxygen deficiency defects occur, it is controlled with high accuracy in a low impurity environment. Since it undergoes an oxidation process at about 800 to 1100 ° C, the defect density is close to that of fused silica glass, and it has excellent transparency from the near-ultraviolet light region of about 200 nm to the near-infrared light band of about 2500 nm. A glass film is obtained.
  • thermally oxidized Si is used as a core, and by selecting the structure and manufacturing procedure of the embedded optical waveguide and the clad material shown below, it is inexpensive and has a wide band from the ultraviolet light band to the near infrared light band. We have found a usable optical waveguide.
  • FIG. 2 is a cross-sectional view showing the structure of the thermal oxide Si core embedded optical waveguide according to the first embodiment of the present invention. In the following cross-sectional view, unless otherwise specified, the cross-sectional view of the substrate perpendicular to the optical propagation direction of the optical waveguide is shown, including other embodiments.
  • the optical waveguide has an embedded optical waveguide structure of a thermally oxidized Si core.
  • a part of the Si wafer 21 to be a substrate is hollowed out, and the thermal oxide Si core 23 to be the core of the optical waveguide is directly sandwiched and supported by the upper clad 24 and the lower clad 22, and is positioned at a distance from the Si wafer 21.
  • the structure is such that the thermally oxidized Si core 23 is surrounded by a clad and floats.
  • the upper clad layer 24 and the lower clad layer 22 that directly sandwich and support the thermally oxidized Si core 23 and the thermally oxidized Si core 23 vertically. It has an embedded optical waveguide structure in which the thermally oxidized Si core 23 is located at a distance from the Si wafer 21 as a substrate.
  • the thermally oxidized Si layer 20 initially formed on the back surface of the Si wafer 21 may remain between the Si wafer 21 and the lower clad 22, and the Si wafer 21 is separated from the thermally oxidized Si core 23. At this position, it may be sandwiched between the upper clad 24 and the lower clad 22.
  • Such an embedded optical waveguide structure cannot be produced by the conventional method for producing an optical waveguide for optical communication as shown in FIG.
  • the method for producing the first embodiment of the present invention will be described in detail with reference to FIG.
  • thermal oxide Si layers 30a and 30b are prepared on both the front and back surfaces of the Si wafer 31 to prepare a Si wafer.
  • the thermal oxide Si layer 30a on the upper surface side (front surface side) of the Si wafer 31 is formed with a sufficient film thickness required as a core of an optical waveguide.
  • Alignment markers 37 required for the process process are formed on the thermal oxide Si layers 30a and 30b on both the front and back surfaces. This is done by a photolithography process using a photoresist, covering areas other than the alignment marker position with a resist film, and by a reactive dry etching method using a fluorine-based plasma such as CF 4, thermal oxide Si layers 30a, b and Si wafers. It can be produced by digging into 31.
  • a photoresist 38 is formed on the surface-side thermal oxide Si layer 30a by a photolithography step in a pattern of an optical waveguide core. Then, the thermally oxidized Si layer 30a is removed by etching by a reactive dry etching method using a fluorine-based gas such as CF 4, and as shown in FIG. 3C, the thermally oxidized Si core layer 33 of the ridge-shaped optical waveguide Is produced on the surface of the Si wafer 31.
  • a fluorine-based gas such as CF 4
  • the film thickness of the thermally oxidized Si core layer 33 which is the optical waveguide core
  • the film thickness of the thermally oxidized Si core layer 33 is several tens of ⁇ m at the thickest. Further, assuming that the propagating signal light of the optical waveguide is taken out by an optical fiber or the like, the film thickness is preferably 10 ⁇ m or less.
  • the upper clad layer 34 is laminated on the surface of the thermal oxide Si core layer 33.
  • the material of the clad layer is an optical waveguide having an embedded structure, it is necessary to have a lower refractive index than the thermally oxidized Si core layer 33 in the ultraviolet light band to the near infrared light band. Further, in the present invention, it is also necessary to structurally support the thermal oxide Si core layer 33, so that it is desirable that the mechanical strength is high.
  • polymer compound examples include polytetrafluoroethylene (PTFE), perfluoroalkoxy alkane (PFA), perfluoroethylene-propene copolymer (FEP), ethylene-tetrafluoroethylene copolymer (ETFE), and polyvinylidene fluoride (PVDF).
  • PTFE polytetrafluoroethylene
  • PFA perfluoroalkoxy alkane
  • FEP perfluoroethylene-propene copolymer
  • ETFE ethylene-tetrafluoroethylene copolymer
  • PVDF polyvinylidene fluoride
  • EFEP and other fluororesins, amorphous fluoropolymers, (partially) fluorinated epoxy resins, (partially) fluorinated acrylate resins, (partially) fluorinated silicone resins, and mixtures of the above resins are also used. You can also.
  • quartz glass in which these fluorine compounds are made into fine particles and dispersed, an organic compound, a mixture or a melt of a fluorine compound or a low refractive index oxide and amorphous quartz (SiO 2) can also be used.
  • the upper clad layer 34 in FIG. 3D may have a multilayer structure of two or more layers instead of a one-layer structure.
  • a material having a low refractive index such that the propagating light is sufficiently confined in the thermally oxidized Si core 33 is first laminated so as to cover the surface of the core layer 33 with a thickness that does not allow light to seep out, and then laminated on the material.
  • a material having an excellent mechanical strength even if the refractive index is close to that of the thermally oxidized SiO 2 may be laminated as the second layer.
  • a photoresist 38 is formed on the back surface side (lower surface side in the drawing) of the Si wafer 31, and a pattern wider than that of the core 33 is formed at a position corresponding to the back surface of the optical waveguide core 33.
  • the thermally oxidized Si layer 30b at the position corresponding to the back surface of the optical waveguide core 33 is etched and removed by a reactive dry etching method using a fluorine-based gas such as CF 4.
  • EDP ethylenediamine / pyrocater
  • fluorine-based gas such as CF 4
  • Bosch process using SF 6 and C 4 F 8 gas etc.
  • the lower layer of the wafer 31 is also further etched and removed.
  • the Si wafer layer 31 in the lower portion of the optical waveguide core layer 33 is partially etched and removed until the thermally oxidized Si core layer 33 is separated from the remaining portion of the Si wafer 31 as a substrate. At this time, since it is necessary to etch the Si layer to such an extent that the propagating light in the waveguide core 33 does not seep into the remaining Si wafer layer 31, at least the distance between the core 33 and the remaining portion of the Si layer 31 is set. It should be 10 ⁇ m or more.
  • the lower clad layer 32 is laminated under the optical waveguide core layer 33 from the back surface side as in the upper clad 34, and the embedded optical waveguide structure by the thermal oxide Si core of the first embodiment is formed. Can be produced.
  • FIG. 4 is a cross-sectional view showing the structure of the thermal oxide Si core optical waveguide according to the second embodiment of the present invention.
  • the SiO 2 thermal oxide film on the surface of the Si wafer has excellent adhesion, it does not peel off much even if it is processed into a ridge shape on the surface of the Si wafer as shown in FIG. 3C.
  • the coefficients of thermal expansion of Si and SiO 2 are about 3.6 ⁇ 10 -6 (1 / K) and about 0.65 ⁇ 10 -6 (1 / K), respectively, which are quite different, so that they are thermally oxidized at 800 to 1100 ° C. Residual stress is generated at the interface between Si and SiO 2 due to the temperature difference between the temperature and room temperature.
  • the mechanical strength of the clad material is large enough to overcome this residual stress, the optical waveguide core will not be displaced or the optical waveguide structure will not be destroyed by the residual stress.
  • the mechanical strength of the clad material is low and there is a risk of stress failure. Increases sex. The structure of the second embodiment of the present invention has been found to solve such a problem.
  • the portion corresponding to that of the second embodiment has the same structure, and the description thereof will be omitted.
  • the support substrate 49 is bonded to the upper surface of the upper clad layer 44, and the support substrate 49 prevents the positional deviation of the thermal oxide film SiO 2 core and the structural destruction of the light confinement structure.
  • FIGS. 5 (a) to 5 (c) are the same as the steps of the method of manufacturing the first embodiment of FIGS. 3 (a) to 3 (c).
  • the upper clad layer 44 is laminated on the thermally oxidized Si core 43, and then the support substrate 49 is bonded on the upper clad layer 44.
  • a method of joining the support substrate 49 when the upper clad layer 44 is a thermoplastic clad material, a method of softening by heating and directly joining can also be used, but an adhesive / adhesive material is applied to the upper surface of the upper clad layer 44. It is also possible to join by.
  • the support substrate 49 in FIG. 5D is preferably made of a material having mechanical strength, and further, stress generated due to a difference in thermal expansion coefficient from that of a Si wafer due to a temperature change during the manufacturing process. It is desirable that the material has a coefficient of thermal expansion similar to that of a Si wafer. Further, the support substrate 49 is made of a low-refractive material or the film thickness of the upper clad layer 44 is sufficient so that the light propagating through the thermal oxide Si core 43 does not photobond with others. It needs to be thick, and if possible, the film thickness of the upper clad layer 44 is preferably 10 ⁇ m or more.
  • FIGS. 5 (e) to 5 (g) following the second embodiment are the same as those of FIGS. 3 (e) to 3 (h) of the first embodiment.
  • FIG. 6 is a cross-sectional view showing the structure of a two-layer optical waveguide using a thermally oxidized Si core according to a third embodiment of the present invention.
  • the thermal oxide Si layer that is the core also has the same smoothness. Therefore, in the third embodiment, by introducing a spacer that maintains the distance between the two core layers, it is possible to realize an embedded optical waveguide structure having two layers of optical waveguide cores relatively easily.
  • two embedded optical waveguides of the thermal oxide Si core of the first embodiment of FIG. A two-layered embedded optical waveguide structure is formed by laminating and joining back to back on the layer side.
  • the two thermal oxide Si cores 63a and 63b are included in the clad layer 64 formed by joining the upper clad layers of the original two optical waveguides with the spacer 69 interposed therebetween.
  • the clad layer 64 is sandwiched between the Si wafers 61a and 61b of the original two optical waveguides, and further sandwiched between the clad layers 62a and 62b which are the lower clad layers of the two original optical waveguides.
  • the spacer 69 may also be configured by joining two portions formed in the upper clad layer of the original two optical waveguides.
  • the thermal oxide Si layers 60a and 60b are derived from the thermal oxide Si layers on the back surfaces of the original two optical waveguide Si wafers 61a and 61b.
  • the manufacturing method of the third embodiment of FIG. 7 is roughly a method for manufacturing a two-layer optical waveguide in which two thermally oxidized Si-core optical waveguides are vertically bonded to each other.
  • FIGS. 7 (a) and 7 (b) correspond to the steps of the production method of the first embodiment, FIGS. 3 (a) and 3 (b).
  • a plurality (for example, two) spacers 69b designed to have a desired two-layer core spacing are produced.
  • a method for producing the spacer another structure of thermally oxidized Si processed into a ridge shape can be used, but as shown in FIG. 7C, after the spacer material is deposited, patterning by a photolithography step or It can also be processed by a dry etching method using plasma in vacuum. It can also be produced by spin-coating a pre-curing solution of a UV-curable resin that is cured by a UV reaction with ultraviolet light and directly exposing it to UV light.
  • FIG. 7 (d) the two structures of FIG. 7 (c) were inverted with each other on the core side (the surface on the upper clad layer side in which the spacer was created) back to back, and the clad layer 64 was formed.
  • a two-layer optical waveguide structure of a thermally oxidized Si core having a desired interval can be formed by sandwiching the materials and joining them while aligning them with markers.
  • thermoplastic clad material that becomes a solution such as perfluoroalkanes
  • the upper and lower Sis in FIG. 7 (d) can be obtained without preparing the spacer 69 in FIG. 7 (c).
  • thermoplastic clad material By aligning and fixing the wafers and pouring the thermoplastic clad material, it is possible to form a two-layer optical waveguide structure of a thermally oxidized Si core having a desired interval as shown in FIG. 7 (d).
  • the alignment markers 67 on the front and back surfaces produced in FIG. 7A make it possible to align the relative positions of the two wafers with high accuracy.
  • FIGS. 7 (e) to 7 (g) can be produced by basically repeating the same method as the steps of FIGS. 3 (e) to 3 (h) of the first embodiment on both the front and back surfaces.
  • the fourth embodiment of the present invention is roughly a composite type thermal oxide Si core embedding in which a Si light receiving element (PD) is manufactured on the upper support substrate of the second embodiment and has a light receiving element function as well as structural reinforcement.
  • PD Si light receiving element
  • FIG. 8A is a cross-sectional view of the substrate perpendicular to the light propagation direction of the optical waveguide similar to the others, but FIGS. 8B and 8C are cross sections including the propagating light along the light propagation direction of the optical waveguide. It is a cross-sectional view of the substrate of.
  • the upper support substrate 49 in the second embodiment is replaced with the N-type Si substrate 101, and the implant region of the P-type Si is contained in the N-type Si substrate 101.
  • 102 is formed to form a Si photodiode (PD). Propagation light can be received by the compositely integrated PD, and an electric signal can be detected from the PD electrode 105.
  • the insulating layer 104 may be appropriately formed for electrical separation from the PD.
  • the PD receives the propagating light indicated by the thick dotted arrow from the PD optical waveguide 103 that photocouples to the thermal oxidation core 93, and in the structure of FIG. 8C, the thermal oxidation core is received.
  • a mirror structure 106 that bounces the propagating light is provided at the end of the 93, and the implant region 102 of the P-type Si directly receives the propagating light.
  • the upper and lower Si wafers (101, 91) can be joined while being aligned by the alignment marker, and the optical wave guide and the light receiving element are compositely integrated. It is an embodiment.
  • planar optical waveguide circuit of an ultraviolet light band to a near infrared light band can be realized, but also the planar optical waveguide circuit is structurally reinforced as in the second embodiment.
  • Si light receiving elements with a sensitivity of about 190 to about 1100 nm can also be integrated.
  • the Si photodiode (PD) may be any of a pn junction type photodiode, a pin structure photodiode, and an avalanche amplification photodiode (avalanche photodiode), and an InP / InGaAs-based crystal is separately formed on the Si wafer surface.
  • the compound semiconductor of the above may be sliced and joined to prepare a PD.
  • 8 (a) and 8 (b) are schematic cross-sectional views perpendicular to and parallel to the propagating light of the optical waveguide core in the form in which the optical waveguide 103 for light reception is formed on the surface of the light receiving element. It is sectional drawing parallel to the propagating light of an optical waveguide core when the mirror structure 106 which bounces the propagating light is made on the optical waveguide core part. The dotted arrow in the optical waveguide core shows the propagation path image of the propagating light.
  • FIGS. 9 (a) to 9 (c) of the manufacturing method of the fourth embodiment can be manufactured by the same steps as those of FIGS. 3 (a) to 3 (c) of the first embodiment.
  • the insulating layer 104 and the electrode wiring are separately formed on the front and back surfaces of the PN junction photodiode formed by forming the P-type layer 102 on the surface of the N-type Si wafer 101 by ion implantation.
  • a wafer 101 on which the 105 is formed is prepared.
  • the optical waveguide core layer 103 for PD is prepared on the surface of the P-type layer 102 with, for example, a UV curable resin.
  • a mirror structure 106 that bounces propagating light is provided at the end of the thermal oxidation core 93.
  • the Si wafers are joined to each other using the material of the clad layer 94 while aligning the upper and lower Si wafers (101, 91).
  • FIGS. 9 (e) to 9 (g) can be produced by basically repeating the same steps as those of FIGS. 3 (e) to 3 (h) of the first embodiment.
  • the upper clad layer was prepared by a flame deposition method (FHD: Flame Hydrolysis Deposition).
  • FHD Flame Hydrolysis Deposition
  • a glass raw material having a composition of SiO 2- B 2 O 3 is deposited on a substrate by burning a weight ratio of SiCl 4 to BCl 4 of 1: 1 in hydrogen and oxygen, and heated to 1100 ° C. or higher to thermally oxidize SiO2.
  • An upper clad layer of SiO 2- B 2 O 3 having a lower refractive index than the film, being transparent, and having a thickness of about 50 ⁇ m was prepared.
  • optical waveguide structure similar to that of the first embodiment was manufactured by the manufacturing process process as described above.
  • the chip was cut with a dicing saw, and the SC (Supercontinuum) light source and the light receiving element were provided to evaluate the propagation loss of the obtained optical waveguide chip.
  • the light propagation loss at each light wavelength of 450 nm (blue), 520 nm (green), and 630 nm (red) was 0.3 dB / cm or less.
  • the chip was cut with a dicing saw in the same manner as in Production Example 1, and the SC (SuperContinuum) light source and the light receiving element were provided to evaluate the propagation loss of the obtained optical waveguide chip.
  • the light propagation loss at each light wavelength of 450 nm (blue), 520 nm (green), and 630 nm (red) was 0.3 dB / cm or less.
  • the present invention realizes an embedded optical waveguide having excellent light transmission from the near infrared to the visible light band and the ultraviolet light band at low cost by a relatively simple method.
  • an optical waveguide element that combines and demultiplexes light over a wide band wavelength can be manufactured, and can be used in various industrial fields such as medical treatment, bioanalysis, and display devices such as image projection. Its industrial utility value is extremely high.

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Abstract

L'invention concerne une structure de guide d'ondes optique enterrée qui a une tranche de Si qui fonctionne comme un substrat, un noyau de Si oxydé thermiquement, et une couche de gainage supérieure et une couche de gainage inférieure qui supportent le noyau de Si oxydé thermiquement en prenant en sandwich directement ledit noyau dans la direction verticale, la structure de guide d'ondes optique enterrée étant caractérisée en ce que le noyau de Si oxydé thermiquement est séparé de la tranche de Si qui fonctionne en tant que substrat. L'invention concerne en outre son procédé de production.
PCT/JP2019/041297 2019-10-21 2019-10-21 Structure de guide d'ondes optique enterrée et son procédé de production WO2021079403A1 (fr)

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Citations (7)

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JPH05210021A (ja) * 1992-01-30 1993-08-20 Sumitomo Electric Ind Ltd 導波路作製方法
JPH07318765A (ja) * 1994-05-26 1995-12-08 Nippon Telegr & Teleph Corp <Ntt> 光導波路と半導体受光素子の接続構造
JP2003021737A (ja) * 2001-07-09 2003-01-24 Fujitsu Ltd 光導波路と受光素子の光結合構造
JP2004085868A (ja) * 2002-08-27 2004-03-18 Matsushita Electric Ind Co Ltd 光導波路デバイスおよびその製造方法
JP2007033776A (ja) * 2005-07-26 2007-02-08 Kyoto Institute Of Technology 積層型光導波路の製法
WO2012011370A1 (fr) * 2010-07-23 2012-01-26 日本電気株式会社 Structure de connexion optique
US20130092980A1 (en) * 2011-10-14 2013-04-18 Samsung Electronics Co., Ltd. Photodetector structures including cross-sectional waveguide boundaries

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05210021A (ja) * 1992-01-30 1993-08-20 Sumitomo Electric Ind Ltd 導波路作製方法
JPH07318765A (ja) * 1994-05-26 1995-12-08 Nippon Telegr & Teleph Corp <Ntt> 光導波路と半導体受光素子の接続構造
JP2003021737A (ja) * 2001-07-09 2003-01-24 Fujitsu Ltd 光導波路と受光素子の光結合構造
JP2004085868A (ja) * 2002-08-27 2004-03-18 Matsushita Electric Ind Co Ltd 光導波路デバイスおよびその製造方法
JP2007033776A (ja) * 2005-07-26 2007-02-08 Kyoto Institute Of Technology 積層型光導波路の製法
WO2012011370A1 (fr) * 2010-07-23 2012-01-26 日本電気株式会社 Structure de connexion optique
US20130092980A1 (en) * 2011-10-14 2013-04-18 Samsung Electronics Co., Ltd. Photodetector structures including cross-sectional waveguide boundaries

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