WO2021077486A1 - 一种oled显示面板及显示装置 - Google Patents

一种oled显示面板及显示装置 Download PDF

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Publication number
WO2021077486A1
WO2021077486A1 PCT/CN2019/117756 CN2019117756W WO2021077486A1 WO 2021077486 A1 WO2021077486 A1 WO 2021077486A1 CN 2019117756 W CN2019117756 W CN 2019117756W WO 2021077486 A1 WO2021077486 A1 WO 2021077486A1
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emitting layer
light
doped light
doped
layer
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French (fr)
Inventor
吴元均
矫士博
刘扬
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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Priority to US16/618,803 priority Critical patent/US20210119166A1/en
Publication of WO2021077486A1 publication Critical patent/WO2021077486A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • This application relates to the field of display technology, and in particular to an OLED display panel and a display device.
  • White light organic light-emitting devices (Organic light-emitting devices, OLEDs) is a new type of light source technology that has the advantages of self-luminescence, high efficiency, surface light source, soft luminescence, etc., which can meet the current global demand for energy saving, low-carbon environmental protection and green life. Requirement, currently showing huge and broad prospects in the field of flat panel display and solid-state lighting.
  • the color rendering index is an evaluation index of the light source's ability to express the color of the substance itself. The closer the color rendering index is to 100, the better the color rendering of the light source.
  • Sunlight has a wide spectrum, especially in the visible wavelength range, and the color rendering index of sunlight is close to 100. Therefore, in order to improve the white light quality of the white light OLED, it is necessary to broaden its electroluminescence spectrum and increase the color rendering index.
  • each light-emitting material is doped in the same or different hosts to form a multi-layer light-emitting layer structure to achieve high Performance white light device.
  • this makes the device structure very complicated, and also greatly increases the complexity of the preparation process, the repeatability is not high, and the production cost is increased.
  • the present application provides an OLED display panel and a display device to alleviate the technical problem of complex structure of the current light-emitting layer.
  • the embodiment of the present application provides an OLED display panel, which includes:
  • the light-emitting layer of the light-emitting function layer includes a doped light-emitting layer
  • the host material of the doped light-emitting layer includes a blue fluorescent light-emitting material
  • the guest material includes a thermally activated delayed fluorescent material
  • the doped light-emitting layer includes a stacked arrangement The first doped light-emitting layer and the second doped light-emitting layer, the doping concentration of the guest material in the first doped light-emitting layer and the second doped light-emitting layer are different.
  • the triplet exciton energy level of the blue fluorescent light-emitting material is higher than the singlet exciton and triplet exciton energy levels of the thermally activated delayed fluorescent material.
  • the blue fluorescent light-emitting material is stilbene derivatives, tristyrene, tetrastyrene derivatives, carbazole derivatives, boron or beryllium derivatives. kind of.
  • the molecular structure of the thermally activated delayed fluorescent material includes an electron donor group and an electron acceptor group, and the electron donor group is selected from a phenothiazine group One or a mixture of two or more of the series, the triphenylamine group series, the carbazole group series or the acridine group series, the electron acceptor group is selected from the benzophenone series, the diphenylsulfone group series One of the phthalonitrile group series, the triphenyltriazine group series, the phenyl phosphine oxide group series, the oxathanthrene oxidation series or the thioxanthone group series.
  • the doped light-emitting layer further includes a third doped light-emitting layer, and the third doped light-emitting layer is disposed on the second doped light-emitting layer.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 30% to 90%;
  • the doping concentration of the guest material in the heteroluminescent layer is 1% to 10%.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 1% to 10%;
  • the doping concentration of the guest material in the heteroluminescent layer is 30% to 90%.
  • the doped light-emitting layer further includes a fourth doped light-emitting layer, and the fourth doped light-emitting layer is disposed on the third doped light-emitting layer.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 30% to 90%;
  • the doping concentration of the guest material in the hetero luminescent layer and the fourth doped luminescent layer is 1% to 10%.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 1% to 10%;
  • the doping concentration of the guest material in the hetero luminescent layer and the fourth doped luminescent layer is 30% to 90%.
  • An embodiment of the present application also provides a display device, which includes an OLED display panel, and the OLED display panel includes:
  • the light-emitting layer of the light-emitting function layer includes a doped light-emitting layer
  • the host material of the doped light-emitting layer includes a blue fluorescent light-emitting material
  • the guest material includes a thermally activated delayed fluorescent material
  • the doped light-emitting layer includes a stacked arrangement The first doped light-emitting layer and the second doped light-emitting layer, the doping concentration of the guest material in the first doped light-emitting layer and the second doped light-emitting layer are different.
  • the triplet exciton energy level of the blue fluorescent light-emitting material is higher than the singlet exciton and triplet exciton energy levels of the thermally activated delayed fluorescent material.
  • the blue fluorescent light-emitting material is one of stilbene derivatives, tristyrene, tetrastyrene derivatives, carbazole derivatives, boron or beryllium derivatives.
  • stilbene derivatives tristyrene, tetrastyrene derivatives, carbazole derivatives, boron or beryllium derivatives.
  • the molecular structure of the thermally activated delayed fluorescent material includes an electron donor group and an electron acceptor group
  • the electron donor group is selected from the phenothiazine group series , Triphenylamine group series, carbazole group series or acridine group series or a mixture of two or more
  • the electron acceptor group is selected from benzophenone series, diphenyl sulfone group series, One of the phthalonitrile group series, the triphenyltriazine group series, the phenyl phosphine oxide group series, the oxathanthrene oxidation series or the thioxanthone group series.
  • the doped light-emitting layer further includes a third doped light-emitting layer, and the third doped light-emitting layer is disposed on the second doped light-emitting layer.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 30% to 90%;
  • the doping concentration of the guest material in the light-emitting layer is 1% to 10%.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 1% to 10%; the second doping The doping concentration of the guest material in the light-emitting layer is 30% to 90%.
  • the doped light-emitting layer further includes a fourth doped light-emitting layer, and the fourth doped light-emitting layer is disposed on the third doped light-emitting layer.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 30% to 90%;
  • the doping concentration of the guest material in the light-emitting layer and the fourth doped light-emitting layer is 1% to 10%.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 1% to 10%; the second doping The doping concentration of the guest material in the light-emitting layer and the fourth doped light-emitting layer is 30% to 90%.
  • the light-emitting layer of the light-emitting function layer includes a doped light-emitting layer
  • the host material of the doped light-emitting layer includes a blue fluorescent light-emitting material
  • the guest material includes a thermally activated delayed fluorescent material
  • the doped light-emitting layer includes a first doped light-emitting layer and a second doped light-emitting layer arranged in a stack, and the doping concentration of the guest material in the first doped light-emitting layer and the second doped light-emitting layer are different
  • the application is to design the doped light-emitting layer into a multi-layer structure with different doping concentrations of guest materials and alternating high and low doping concentrations to control the energy transfer between the light-emitting materials, which is beneficial for different light-emitting layers to emit different wavelengths to achieve multiple electricity
  • the electroluminescence peak broadens the luminescence spectrum, improves the color rendering index, and achieve
  • FIG. 1 is a schematic diagram of the first structure of an OLED display panel provided by an embodiment of the application.
  • FIG. 2 is a schematic diagram of a second structure of an OLED display panel provided by an embodiment of the application.
  • FIG. 3 is a first schematic diagram of the luminescence spectrum of a guest dopant material provided in an embodiment of the application.
  • FIG. 4 is a schematic diagram of a third structure of an OLED display panel provided by an embodiment of the application.
  • FIG. 5 is a second schematic diagram of the luminescence spectrum of the guest dopant material provided in an embodiment of the application.
  • the embodiment of the present application can alleviate the technical problem of the complex structure of the existing light-emitting layer.
  • An embodiment of the present application provides an OLED display panel 100, as shown in FIG. 1, which includes:
  • the driving circuit layer 20 is formed on the substrate 10;
  • the light-emitting function layer 30 is formed on the driving circuit layer 20;
  • the light-emitting layer of the light-emitting function layer 30 includes a doped light-emitting layer 33
  • the host material of the doped light-emitting layer includes a blue fluorescent light-emitting material
  • the guest material includes a thermally activated delayed fluorescent material
  • the doped light-emitting layer includes The first doped light emitting layer 331 and the second doped light emitting layer 332 are stacked, and the doping concentration of the guest material in the first doped light emitting layer 331 and the second doped light emitting layer 332 is different.
  • the emission peak of the thermally activated delayed fluorescent material is very sensitive to the doping concentration. As the doped concentration of the thermally activated delayed fluorescent material gradually increases, the emission spectrum can show a significant change, for example, the luminescent color can be significantly changed from yellow to red. Moving to orange light or even red light.
  • the triplet exciton energy level of the blue fluorescent light-emitting material is higher than the singlet exciton and triplet exciton energy levels of the thermally activated delayed fluorescent material, so that the energy transfer between the two can reduce exciton loss, Moreover, the thermally activated delayed fluorescent material can theoretically achieve 100% exciton utilization.
  • the substrate 10 has a certain degree of water vapor and oxygen permeability, and has good surface flatness. It can be glass or a flexible substrate.
  • the flexible substrate uses polyester or polyphthalimide. A material in a compound or a thinner metal.
  • the blue fluorescent light-emitting material is one of stilbene derivatives, tristyrene, tetrastyrene derivatives, carbazole derivatives, boron or beryllium derivatives.
  • the thermally activated delayed fluorescence (TADF) material has a small singlet-triplet energy level difference, so that a triplet to singlet interaction can occur at room temperature. Leaps, so theoretically, 100% exciton utilization can be achieved.
  • the molecular structure of the thermally activated delayed fluorescent material includes an electron donor group and an electron acceptor group, and the electron donor group is selected from the phenothiazine group series and the triphenylamine group series.
  • the electron donor group is selected from the phenothiazine group series and the triphenylamine group series.
  • the electron acceptor group is selected from benzophenone series, diphenyl sulfone group series, phthalonitrile group One of series, triphenyltriazine group series, phenyl phosphine oxide group series, oxathanthrene oxidation series or thioxanthone group series.
  • the light-emitting function layer 30' of the OLED display panel 101 includes an anode layer 31, a hole transport layer 32, a doped light-emitting layer 33', an electron transport layer 34, and a cathode layer 35.
  • the doped light-emitting layer 33' is formed by doping the same host blue fluorescent light-emitting material with the same guest thermally activated delayed fluorescent material.
  • the doped light-emitting layer 33' includes a first doped light-emitting layer 331, a second doped light-emitting layer 332, and a third doped light-emitting layer 333 that are stacked, wherein the first doped light-emitting layer 331 and The doping concentration of the guest material in the third doped light-emitting layer 333 is 30% to 90%; the doping concentration of the guest material in the second doped light-emitting layer 332 is 1% to 10%.
  • the doping concentration of the guest material in the first doped light-emitting layer 331 is 90%
  • the doping concentration of the guest material in the third doped light-emitting layer 333 is 50%
  • the doping concentration of the guest material in the second doped light-emitting layer 332 The doping concentration of the guest material is 10%.
  • FIG. 3 it is an electroluminescence spectrum formed by a thermally activated delayed fluorescent material under different doping concentrations.
  • the doping concentration shown in the figure is the mass ratio of the guest thermally activated fluorescent material.
  • the doping concentration of the guest material in the first doped light-emitting layer is preferably 90%, and the third doped light-emitting layer
  • the doping concentration of the guest material is preferably 50%, and the doping concentration of the guest material in the second doped light-emitting layer is preferably 10%.
  • the doped light-emitting layer adopts different concentrations of guest-doped thermally activated fluorescent materials, which can make different light-emitting layers emit different wavelengths to achieve multiple electroluminescence peaks and broaden the light emission spectrum.
  • the material used for the electron transport layer is metal complexes, oxadiazole compounds, quinoxaline compounds, nitrogen-containing heterocyclic compounds, phosphinooxy compounds, anthracene compounds, and organosilicon materials. , One or more of organic boron materials or organic sulfur materials.
  • the metal complexes are 8-hydroxyquinoline aluminum, bis(2-methyl-8-hydroxyquinoline) (p-phenylphenol) aluminum, 8-hydroxyquinoline lithium, bis(10-hydroxybenzo[h ] Quinoline) beryllium or bis[2-(2-hydroxyphenyl-1)-pyridine] beryllium,
  • the oxadiazole compound is 2-(4-diphenyl)-5-(4-tert-butylphenyl) -1,3,4-oxadiazole 18 or 1,3-bis[2-(4-tert-butylbenzene)-1,3,4-oxadiazole-5-yl]benzene, nitrogen-containing heterocyclic compound 1,3,5-(tris-N-phenyl-2-benzimidazole-2)benzene 41, 4,7-biphenyl-1,10-phenanthroline, 2,9-dimethyl -4,7-Biphenyl-1,10-phenanthroline, 3-(4-diphenyl)-4-
  • the cathode is usually a low work function metal material, such as lithium, magnesium, calcium, strontium, aluminum, indium and other metals with low work function or their alloys with copper, gold, and silver; or a layer A very thin buffer insulating layer (such as LiF, MgF 2 ) and the aforementioned metals or alloys are combined.
  • a low work function metal material such as lithium, magnesium, calcium, strontium, aluminum, indium and other metals with low work function or their alloys with copper, gold, and silver
  • a layer A very thin buffer insulating layer such as LiF, MgF 2
  • the difference from the above-mentioned embodiment is that the first doped light-emitting layer 331, the second doped light-emitting layer 332, and the third doped light-emitting layer 333 of the doped light-emitting layer have different doping concentrations.
  • the doping concentration of the guest material in the first doped light-emitting layer 331 and the third doped light-emitting layer 333 is 1% to 10%; the doping concentration of the guest material in the second doped light-emitting layer 332 is 30% to 90% %.
  • the light-emitting functional layer 30 ′′ of the OLED display panel 102 includes an anode layer 31, a hole transport layer 32, a doped light-emitting layer 33 ′′, an electron transport layer 34 and a cathode layer 35.
  • the doped light emitting layer 33" includes a first doped light emitting layer 331, a second doped light emitting layer 332, a third doped light emitting layer 333, and a fourth doped light emitting layer 334, which are stacked.
  • the doping concentration of the guest material in the first doped light-emitting layer 331 and the third doped light-emitting layer 333 is 30% to 90%; the doping concentration of the guest material in the second doped light-emitting layer 332 and the fourth doped light-emitting layer 334 1% to 10%.
  • the doping concentration of the guest material in the first doped light-emitting layer 331 is 80%
  • the doping concentration of the guest material in the third doped light-emitting layer 333 is 30%
  • the doping concentration of the guest material in the second doped light-emitting layer is 30%.
  • the doping concentration of the guest material in 332 is 8%
  • the doping concentration of the guest material in the fourth doped light-emitting layer 334 is 1%.
  • the emission peak of the thermally activated delayed fluorescent material is very sensitive to the doping concentration. As the doped concentration of the thermally activated delayed fluorescent material gradually increases, the emission spectrum can show a significant change, for example, the luminescent color can be significantly changed from yellow to red. Moving to orange light or even red light.
  • the anode layer 31 is usually required to have good electrical conductivity, visible light transparency, and high work function, and usually uses inorganic metal oxides (such as indium tin oxide ITO), organic conductive polymers (such as PEDOT:PSS) or Metal materials with high work function (such as gold, copper, silver, platinum).
  • inorganic metal oxides such as indium tin oxide ITO
  • organic conductive polymers such as PEDOT:PSS
  • Metal materials with high work function such as gold, copper, silver, platinum.
  • the material of the hole transport layer 32 is one or a mixture of two or more of carbazole-based compounds, aromatic triamine-based compounds, or star-shaped triphenylamine-based compounds.
  • the carbazole compound can be 1,3-bis(carbazole-9-yl)benzene (MCP), 4,4',4"-tris(carbazole-9-yl)triphenylamine (TCTA), 4 ,4'-bis(carbazole-9-yl)biphenyl (CBP) or 3,3-bis(9H-carbazole-9-yl)biphenyl (mCBP).
  • Aromatic triamine compounds can be bis- [4-(N,N-Dimethylbenzene-amino)-phenyl]cyclohexane (TAPC).
  • Star-shaped triphenylamine compounds can contain phenyl (TDAB series), triphenylamine (PTDATA series) or 1 ,3,5-Triphenylbenzene (TDAPB series) one or a mixture of two or more star-shaped triphenylamine compounds.
  • Figure 5 shows the electroluminescence spectra formed by thermally activated delayed fluorescent materials at different doping concentrations.
  • the doping concentration shown in FIG. 5 is the mass ratio of the guest thermally activated fluorescent material doping.
  • the preferred guest doping concentration of the first doped light-emitting layer is 80%
  • the second doped light-emitting layer is preferably
  • the guest doping concentration is 8%
  • the preferred guest doping concentration of the third doped light-emitting layer is 30%
  • the preferred guest doping concentration of the fourth doped light-emitting layer is 1%. It can be seen from FIG. 5 that the doped light-emitting layer adopts different concentrations of guest-doped thermally activated fluorescent materials, which can make different light-emitting layers emit different wavelengths to achieve multiple electroluminescence peaks and broaden the light emission spectrum.
  • the first doped light-emitting layer 331, the second doped light-emitting layer 332, the third doped light-emitting layer 333 and the fourth doped light-emitting layer are doped with light-emitting layers.
  • the doping concentration of the layer 334 is different, wherein the doping concentration of the guest material in the first doped light-emitting layer 331 and the third doped light-emitting layer 333 is 1% to 10%; the second doped light-emitting layer 332 and the fourth doped light-emitting layer 332
  • the doping concentration of the guest material in the hetero luminescent layer 334 is 30% to 90%.
  • the number of doped light-emitting layers can also be set to more layers.
  • a method for manufacturing an OLED display panel which includes the following steps:
  • Step S1 Provide a substrate, and clean and dry the substrate
  • Step S2 preparing a driving circuit layer, including sequentially stacking and preparing a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source and drain layer, and a planarization layer on the substrate;
  • Step S3 Preparation of a light-emitting function layer, which includes stacking and preparing an anode layer, a hole transport layer, a doped light-emitting layer, an electron transport layer, and a cathode layer on the driver circuit layer, wherein the doped light-emitting layer can be laminated to prepare two layers according to requirements. Or two or more doped light emitting layers, for example, a first doped light emitting layer, a second doped light emitting layer, a third doped light emitting layer, and a fourth doped light emitting layer are laminated in sequence;
  • Step S4 preparing an encapsulation layer, including encapsulating the substrate obtained in the above steps.
  • step S3 the anode layer, the hole transport layer, the doped light-emitting layer, the electron transport layer, and the cathode layer are directly prepared by a dry method, or diluted by an organic solvent and then prepared on the substrate in a wet process.
  • the available processes are: vacuum evaporation, ion cluster beam deposition, ion plating, DC sputtering coating, radio frequency sputtering coating, ion beam sputtering coating, ion beam assisted deposition, plasma enhanced chemical vapor deposition, high-density inductive coupling It is formed by one or more methods of plasma source chemical vapor deposition, catalytic chemical vapor deposition, magnetron sputtering, electroplating, spin coating, dip coating, inkjet printing, roll coating, and LB film.
  • the doped light-emitting layer is prepared by doping the same host blue fluorescent light-emitting material with the same guest thermally activated delayed fluorescent material, and the guest material doping concentration of the multilayer doped light-emitting layer is different, for example, doped
  • the doping concentration of the guest material in the first doped light-emitting layer of the hybrid light-emitting layer is 70%
  • the doping concentration of the guest material in the third doped light-emitting layer is 40%
  • the doping of the guest material in the second doped light-emitting layer The concentration is 9%
  • the doping concentration of the guest material in the fourth doped light-emitting layer is 2%.
  • a display device which includes an OLED display panel, and the OLED display panel includes:
  • the light-emitting layer of the light-emitting function layer includes a doped light-emitting layer
  • the host material of the doped light-emitting layer includes a blue fluorescent light-emitting material
  • the guest material includes a thermally activated delayed fluorescent material
  • the doped light-emitting layer includes a stacked arrangement The first doped light-emitting layer and the second doped light-emitting layer, the doping concentration of the guest material in the first doped light-emitting layer and the second doped light-emitting layer are different.
  • the triplet exciton energy level of the blue fluorescent light-emitting material is higher than the singlet exciton and triplet exciton energy levels of the thermally activated delayed fluorescent material.
  • the blue fluorescent light-emitting material is one of stilbene derivatives, tristyrene, tetrastyrene derivatives, carbazole derivatives, boron derivatives, or beryllium derivatives.
  • the molecular structure of the thermally activated delayed fluorescent material includes an electron donor group and an electron acceptor group, and the electron donor group is selected from the group consisting of phenothiazine group and triphenylamine group.
  • the electron donor group is selected from the group consisting of phenothiazine group and triphenylamine group.
  • the electron acceptor group is selected from the group consisting of benzophenone series, diphenylsulfone group series, and phthalonitrile
  • the doped light-emitting layer further includes a third doped light-emitting layer, and the third doped light-emitting layer is disposed on the second doped light-emitting layer.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 30% to 90%;
  • the doping concentration of the guest material is 1% to 10%.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 1% to 10%;
  • the doping concentration of the guest material is 30% to 90%.
  • the doped light-emitting layer further includes a fourth doped light-emitting layer, and the fourth doped light-emitting layer is disposed on the third doped light-emitting layer.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 30% to 90%; the second doped light-emitting layer and the The doping concentration of the guest material in the fourth doped light-emitting layer is 1% to 10%.
  • the doping concentration of the guest material in the first doped light-emitting layer and the third doped light-emitting layer is 1% to 10%;
  • the doping concentration of the guest material in the fourth doped light-emitting layer is 30% to 90%.
  • the embodiments of the present application provide an OLED display panel, a preparation method thereof, and a display device.
  • the light-emitting layer of the light-emitting function layer includes a doped light-emitting layer, and the doped light-emitting layer is doped with the same host blue fluorescent light-emitting material.
  • the guest thermally activated delayed fluorescent material is formed; in this application, the doped light-emitting layer is designed into a structure with multiple guest materials with different doping concentrations and alternating high and low doping concentrations.
  • the light-emitting peak of the thermally activated delayed material is very sensitive to the doping concentration.

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Abstract

一种OLED显示面板(100,101,102)及显示装置，其掺杂发光层(33,33',33'')由同一种主体蓝色荧光发光材料掺杂同一种客体热激活延迟荧光材料形成；掺杂发光层(33,33',33'')的第一掺杂发光层(331)和第二掺杂发光层(332)中客体材料的掺杂浓度不同；有利于不同发光层发射不同波长以实现多个电致发光波峰，拓宽发光光谱，提高显色指数，实现简化发光层结构的目的。

Description

一种OLED显示面板及显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种OLED显示面板及显示装置。
 背景技术
白光有机发光器件（Organic light-emitting devices，OLEDs）是一种新型光源技术，具有自发光、高效率、面光源、发光柔和等优点，能够满足当下全世界对节约能源，低碳环保和绿色生活的要求，目前在平板显示和固态照明领域表现出巨大的广泛前景。显色指数是光源表现物质本身颜色能力的一个评价指标，显色指数越接近100，表明光源的显色性越好。太阳光具有很宽的光谱，尤其是在可见光波长范围，太阳光的显色指数接近100。因此，为了提高白光OLED的白光质量，需要拓宽其电致发光光谱，提高显色指数。
通常白光OLED器件中，是将多个发光染料掺杂在主体材料中形成单层发光层结构，或是将每种发光材料分别掺杂在相同或不同主体中形成多层发光层结构，实现高性能白光器件。然而，这样使得器件结构十分复杂，也大大增加了制备工艺的复杂性，重复性不高，提高了生产成本。
因此，现有发光层结构复杂的问题需要解决。
 技术问题
本申请提供一种OLED显示面板及显示装置，以缓解现发光层结构复杂的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供一种OLED显示面板，其包括：
衬底；
驱动电路层，形成于所述衬底上；
发光功能层，形成于所述驱动电路层上；
其中，所述发光功能层的发光层包括掺杂发光层，所述掺杂发光层的主体材料包括蓝色荧光发光材料，客体材料包括热激活延迟荧光材料；所述掺杂发光层包括层叠设置的第一掺杂发光层和第二掺杂发光层，所述第一掺杂发光层和所述第二掺杂发光层中所述客体材料的掺杂浓度不同。
在本申请实施例提供的OLED显示面板中，所述蓝色荧光发光材料的三线态激子能级高于所述热激活延迟荧光材料的单线态激子和三线态激子能级。
在本申请实施例提供的OLED显示面板中，所述蓝色荧光发光材料为二苯乙烯衍生物、三苯乙烯、四苯乙烯衍生物、咔唑类衍生物、硼类或者铍类衍生物中的一种。
在本申请实施例提供的OLED显示面板中，所述热激活延迟荧光材料的分子结构中包括电子给体基团和电子受体基团，所述电子给体基团选自吩噻嗪基团系列、三苯胺基团系列、咔唑基团系列或者吖啶基团系列中的一种或两种以上混合，所述电子受体基团选自二苯甲酮系列、二苯砜基团系列、苯二甲腈基团系列、三苯三嗪基团系列、苯基氧化膦基团系列、氧硫杂蒽氧化系列或者硫杂蒽酮基团系列中的一种。
在本申请实施例提供的OLED显示面板中，所述掺杂发光层还包括第三掺杂发光层，所述第三掺杂发光层设置于所述第二掺杂发光层上。
在本申请实施例提供的OLED显示面板中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
在本申请实施例提供的OLED显示面板中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
在本申请实施例提供的OLED显示面板中，所述掺杂发光层还包括第四掺杂发光层，所述第四掺杂发光层设置于所述第三掺杂发光层上。
在本申请实施例提供的OLED显示面板中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
在本申请实施例提供的OLED显示面板中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
本申请实施例还提供一种显示装置，其包括OLED显示面板，所述OLED显示面板包括：
衬底；
驱动电路层，形成于所述衬底上；
发光功能层，形成于所述驱动电路层上；
其中，所述发光功能层的发光层包括掺杂发光层，所述掺杂发光层的主体材料包括蓝色荧光发光材料，客体材料包括热激活延迟荧光材料；所述掺杂发光层包括层叠设置的第一掺杂发光层和第二掺杂发光层，所述第一掺杂发光层和所述第二掺杂发光层中所述客体材料的掺杂浓度不同。
在本申请实施例提供的显示装置中，所述蓝色荧光发光材料的三线态激子能级高于所述热激活延迟荧光材料的单线态激子和三线态激子能级。
在本申请实施例提供的显示装置中，所述蓝色荧光发光材料为二苯乙烯衍生物、三苯乙烯、四苯乙烯衍生物、咔唑类衍生物、硼类或者铍类衍生物中的一种。
在本申请实施例提供的显示装置中，所述热激活延迟荧光材料的分子结构中包括电子给体基团和电子受体基团，所述电子给体基团选自吩噻嗪基团系列、三苯胺基团系列、咔唑基团系列或者吖啶基团系列中的一种或两种以上混合，所述电子受体基团选自二苯甲酮系列、二苯砜基团系列、苯二甲腈基团系列、三苯三嗪基团系列、苯基氧化膦基团系列、氧硫杂蒽氧化系列或者硫杂蒽酮基团系列中的一种。
在本申请实施例提供的显示装置中，所述掺杂发光层还包括第三掺杂发光层，所述第三掺杂发光层设置于所述第二掺杂发光层上。
在本申请实施例提供的显示装置中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
在本申请实施例提供的显示装置中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
在本申请实施例提供的显示装置中，所述掺杂发光层还包括第四掺杂发光层，所述第四掺杂发光层设置于所述第三掺杂发光层上。
在本申请实施例提供的显示装置中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
在本申请实施例提供的显示装置中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
 有益效果
本申请提供的OLED显示面板及显示装置，其发光功能层的发光层包括掺杂发光层，所述掺杂发光层的主体材料包括蓝色荧光发光材料，客体材料包括热激活延迟荧光材料；所述掺杂发光层包括层叠设置的第一掺杂发光层和第二掺杂发光层，所述第一掺杂发光层和所述第二掺杂发光层中客体材料的掺杂浓度不同；本申请通过把掺杂发光层设计成多层客体材料掺杂浓度不同，且高低掺杂浓度交替的结构，以控制发光材料之间的能量传递，有利于不同发光层发射不同波长以实现多个电致发光波峰，拓宽发光光谱，提高显色指数，实现了简化发光层结构和降低生产成本的目的。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的OLED显示面板第一种结构示意图。
图2为本申请实施例提供的OLED显示面板第二种结构示意图。
图3为本申请实施例提供的客体掺杂材料发光光谱的第一种示意图。
图4为本申请实施例提供的OLED显示面板第三种结构示意图。
图5为本申请实施例提供的客体掺杂材料发光光谱的第二种示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
针对现有发光层结构复杂的技术问题，本申请实施例可以缓解。
本申请实施例提供一种OLED显示面板100，如图1所示，其包括：
衬底10；
驱动电路层20，形成于所述衬底10上；
发光功能层30，形成于所述驱动电路层20上；
其中，所述发光功能层30的发光层包括掺杂发光层33，所述掺杂发光层的主体材料包括蓝色荧光发光材料，客体材料包括热激活延迟荧光材料；所述掺杂发光层包括层叠设置的第一掺杂发光层331和第二掺杂发光层332，所述第一掺杂发光层331和所述第二掺杂发光层332中客体材料的掺杂浓度不同。
具体的，热激活延迟荧光材料的发光波峰对掺杂浓度非常敏感，随着热激活延迟荧光材料的掺杂浓度逐渐升高时，发光光谱可表现出显著变化，如发光颜色可以明显地从黄光红移到橙光甚至是到红光的现象。
具体的，蓝色荧光发光材料的三线态激子能级高于所述热激活延迟荧光材料的单线态激子和三线态激子能级，从而通过二者的能量传递，减少激子损失，而且热激活延迟荧光材料理论上可以达到100%的激子利用率，通过结合蓝色荧光发光材料和热激活延迟荧光材料制备掺杂发光层，可以减少发光材料的数目，进而降低材料成本。
在一种实施例中，衬底10有一定的防水汽和氧气渗透的能力，有较好的表面平整性，它可以是玻璃或柔性基片，柔性基片采用聚酯类、聚酞亚胺化合物中的一种材料或者较薄的金属。
在一种实施例中，蓝色荧光发光材料为二苯乙烯衍生物、三苯乙烯、四苯乙烯衍生物、咔唑类衍生物、硼类或者铍类衍生物中的一种。
在一种实施例中，热激活延迟荧光（Thermally Activated Delayed Fluorescence，TADF）材料，具有很小的单线态-三线态能级差，使得在常温下就能发生三线态到单线态的电子系间反窜跃，从而理论上也能达到100%的激子利用率。
在一种实施例中，热激活延迟荧光材料的分子结构中包括电子给体基团和电子受体基团，所述电子给体基团选自吩噻嗪基团系列、三苯胺基团系列、咔唑基团系列或者吖啶基团系列中的一种或两种以上混合，所述电子受体基团选自二苯甲酮系列、二苯砜基团系列、苯二甲腈基团系列、三苯三嗪基团系列、苯基氧化膦基团系列、氧硫杂蒽氧化系列或者硫杂蒽酮基团系列中的一种。
在一种实施例中，如图2所示， OLED显示面板101的发光功能层30’包括阳极层31、空穴传输层32、掺杂发光层33’、电子传输层34和阴极层35。
在一种实施例中，掺杂发光层33’由同一种主体蓝色荧光发光材料掺杂同一种客体热激活延迟荧光材料形成。
在一种实施例中，掺杂发光层33’包括层叠设置的第一掺杂发光层331、第二掺杂发光层332和第三掺杂发光层333，其中第一掺杂发光层331和第三掺杂发光层333中客体材料的掺杂浓度为30%至90%；第二掺杂发光层332中客体材料的掺杂浓度为1%至10%。
在一种实施例中，第一掺杂发光层331中客体材料的掺杂浓度为90%，第三掺杂发光层333中客体材料的掺杂浓度为50%，第二掺杂发光层332中客体材料的掺杂浓度为10%。
在一种实施例中，如图3所示，为热激活延迟荧光材料在不同掺杂浓度下形成的电致发光光谱。图中所示出的掺杂浓度为客体热激活荧光材料掺杂的质量比，本实施例中第一掺杂发光层中客体材料的掺杂浓度优选为90%，第三掺杂发光层中客体材料的掺杂浓度优选为50%，第二掺杂发光层中客体材料的掺杂浓度优选为10%。从图3中可以看出，掺杂发光层采用不同浓度的客体掺杂热激活荧光材料，可以使不同发光层发射不同波长以实现多个电致发光波峰，拓宽发光光谱。
在一种实施例中，所述电子传输层采用的材料为金属配合物、恶二唑类化合物、喹喔啉类化合物、含氮杂环化合物、膦氧基化合物、蒽类化合物、有机硅材料、有机硼材料或者有机硫材料中的一种或多种。其中，金属配合物为8-羟基喹啉铝、双(2-甲基-8-羟基喹啉)(对苯基苯酚)铝、8-羟基喹啉锂、双(10-羟基苯并[h]喹啉)铍或者双[2-(2-羟基苯基-1)-吡啶]铍，恶二唑类化合物为2-(4-二苯基)-5-(4-叔丁苯基)-1,3,4-恶二唑18或者1,3-二[2-(4-特丁基苯)-1,3,4-恶二唑-5-yl]苯，含氮杂环化合物为1,3,5-(三N-苯基-2-苯并咪唑-2)苯41、4,7-联二苯-1,10-邻二氮杂菲、2,9-二甲基-4,7-联二苯-1,10-邻二氮杂菲、3-(4-二苯)-4-苯-5-特丁基苯-1,2,4-苯三唑、3,5,3”,5”-四-3-吡啶-[1,1’;3’,1”]三联苯、3-(二苯基磷酸氯)-9-苯-9H-咔唑、3,6-双(二苯基磷酸氯)-9-苯-9H-咔唑、膦氧基化合物是二(2-(二苯基膦基)苯)醚氧化物、或者2,8-二(二甲苯磷酸)硫芴，蒽类化合物为9,10-二-(2-萘基)蒽，有机硼材料为三(2,4,6-三甲基-3-(吡啶-3-yl)苯)硼烷，有机硫材料为2,8-二(二甲苯磷酸)硫芴。
在一种实施例中，阴极通常为低功函数金属材料，如锂、镁、钙、锶、铝、铟等功函数较低的金属或它们与铜、金、银的合金；或者由一层很薄的缓冲绝缘层（如LiF、MgF 2）和前面所提到的金属或合金组合而成。
在一种是实施例中，与上述实施例不同的是，掺杂发光层的第一掺杂发光层331、第二掺杂发光层332和第三掺杂发光层333设置的掺杂浓度不同，其中第一掺杂发光层331和第三掺杂发光层333中客体材料的掺杂浓度为1%至10%；第二掺杂发光层332中客体材料的掺杂浓度为30%至90%，其他说明请参照上述实施例，在此不再赘述。
在一种实施例中，如图4所示， OLED显示面板102的发光功能层30”包括阳极层31、空穴传输层32、掺杂发光层33”、电子传输层34和阴极层35。
如图4所示，掺杂发光层33”包括层叠设置的第一掺杂发光层331、第二掺杂发光层332、第三掺杂发光层333和第四掺杂发光层334，其中第一掺杂发光层331和第三掺杂发光层333中客体材料的掺杂浓度为30%至90%；第二掺杂发光层332和第四掺杂发光层334中客体材料的掺杂浓度为1%至10%。
在另一种实施例中，第一掺杂发光层331中客体材料的掺杂浓度为80%，第三掺杂发光层333中客体材料的掺杂浓度为30%，第二掺杂发光层332中客体材料的掺杂浓度为8%，第四掺杂发光层334中客体材料的掺杂浓度为1%。
具体的，热激活延迟荧光材料的发光波峰对掺杂浓度非常敏感，随着热激活延迟荧光材料的掺杂浓度逐渐升高时，发光光谱可表现出显著变化，如发光颜色可以明显地从黄光红移到橙光甚至是到红光的现象。
具体的，阳极层31通常要求有较好的导电性能、可见光透明性以及较高的功函数，通常采用无机金属氧化物（如氧化铟锡ITO）、有机导电聚合物（如PEDOT:PSS）或高功函数的金属材料（如金、铜、银、铂）。
具体的，空穴传输层32材料为咔唑类化合物、芳香族三胺类化合物或星形三苯胺类化合物中的一种或两种以上的混合。其中，咔唑类化合物可以是1,3-二(咔唑-9-yl)苯（MCP）、4,4’,4”-三(咔唑-9-yl)三苯胺（TCTA）、4,4’-二(咔唑-9-yl)联苯（CBP）或者3,3-二(9H-咔唑-9-yl)联苯（mCBP）。芳香族三胺类化合物可以是二-[4-(N,N-联甲苯-氨基)-苯基]环己烷（TAPC）。星形三苯胺类化合物可以是分子中心含有苯基（TDAB系列）、三苯胺（PTDATA系列）或者1,3,5-三苯基苯（TDAPB系列）的星形三苯胺类化合物的一种或两种以上的混合。
图5所示为热激活延迟荧光材料在不同掺杂浓度下形成的电致发光光谱。图5中所示出的掺杂浓度为客体热激活荧光材料掺杂的质量比，本实施例中第一掺杂发光层优选的客体掺杂浓度为80%、第二掺杂发光层优选的客体掺杂浓度为8%、第三掺杂发光层优选的客体掺杂浓度为30%、第四掺杂发光层优选的客体掺杂浓度为1%。从图5中可以看出，掺杂发光层采用不同浓度的客体掺杂热激活荧光材料，可以使不同发光层发射不同波长以实现多个电致发光波峰，拓宽发光光谱。
在另一种实施例中，与上述实施例不同的是，掺杂发光层的第一掺杂发光层331、第二掺杂发光层332、第三掺杂发光层333和第四掺杂发光层334设置的掺杂浓度不同，其中第一掺杂发光层331和第三掺杂发光层333中客体材料的掺杂浓度为1%至10%；第二掺杂发光层332和第四掺杂发光层334中客体材料的掺杂浓度为30%至90%，其他说明请参照上述实施例，在此不再赘述。
在一种实施例中，掺杂发光层的层数还可以设置为更多层。
在一种实施例中，提供一种OLED显示面板的制备方法，其包括以下步骤：
步骤S1：提供一衬底，并对衬底进行清洗、烘干处理；
步骤S2：制备驱动电路层，包括在衬底上依次层叠制备缓冲层、有源层、栅极绝缘层、栅极层、层间绝缘层、源漏极层和平坦化层；
步骤S3：制备发光功能层，包括在驱动电路层上依次层叠制备阳极层、空穴传输层、掺杂发光层、电子传输层和阴极层，其中掺杂发光层可根据需求依次层叠制备二层或二层以上的掺杂发光层，例如依次层叠制备第一掺杂发光层、第二掺杂发光层、第三掺杂发光层和第四掺杂发光层；
步骤S4：制备封装层，包括对上述步骤制得的衬底进行封装。
具体的，在步骤S3中，阳极层、空穴传输层、掺杂发光层、电子传输层和阴极层直接依次以干法制备，或者经过有机溶剂稀释后经过湿法工艺依次制备于衬底上，例如可采用工艺为：真空蒸镀、离子团束沉积、离子镀、直流溅射镀膜、射频溅射镀膜、离子束溅射镀膜、离子束辅助沉积、等离子增强化学气相沉积、高密度电感耦合式等离子体源化学气相沉积、触媒式化学气相沉积、磁控溅射、电镀、旋涂、浸涂、喷墨打印、辊涂、LB膜中的一种或者几种方式而形成。
具体的，在步骤S3中，制备掺杂发光层由同一种主体蓝色荧光发光材料掺杂同一种客体热激活延迟荧光材料制备，多层掺杂发光层的客体材料掺杂浓度不同，例如掺杂发光层的第一掺杂发光层中客体材料的掺杂浓度为70%，第三掺杂发光层中客体材料的掺杂浓度为40%，第二掺杂发光层中客体材料的掺杂浓度为9%，第四掺杂发光层中客体材料的掺杂浓度为2%。
在一种实施例中，提供一种显示装置，其包括OLED显示面板，所述OLED显示面板包括：
衬底；
驱动电路层，形成于所述衬底上；
发光功能层，形成于所述驱动电路层上；
其中，所述发光功能层的发光层包括掺杂发光层，所述掺杂发光层的主体材料包括蓝色荧光发光材料，客体材料包括热激活延迟荧光材料；所述掺杂发光层包括层叠设置的第一掺杂发光层和第二掺杂发光层，所述第一掺杂发光层和所述第二掺杂发光层中所述客体材料的掺杂浓度不同。
在一种实施例中，所述蓝色荧光发光材料的三线态激子能级高于所述热激活延迟荧光材料的单线态激子和三线态激子能级。
在一种实施例中，所述蓝色荧光发光材料为二苯乙烯衍生物、三苯乙烯、四苯乙烯衍生物、咔唑类衍生物、硼类或者铍类衍生物中的一种。
在一种实施例中，所述热激活延迟荧光材料的分子结构中包括电子给体基团和电子受体基团，所述电子给体基团选自吩噻嗪基团系列、三苯胺基团系列、咔唑基团系列或者吖啶基团系列中的一种或两种以上混合，所述电子受体基团选自二苯甲酮系列、二苯砜基团系列、苯二甲腈基团系列、三苯三嗪基团系列、苯基氧化膦基团系列、氧硫杂蒽氧化系列或者硫杂蒽酮基团系列中的一种。
在一种实施例中，所述掺杂发光层还包括第三掺杂发光层，所述第三掺杂发光层设置于所述第二掺杂发光层上。
在一种实施例中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
在一种实施例中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
在一种实施例中，所述掺杂发光层还包括第四掺杂发光层，所述第四掺杂发光层设置于所述第三掺杂发光层上。
在一种实施例中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
在一种实施例中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
根据上述实施例可知：
本申请实施例提供一种OLED显示面板及其制备方法以及显示装置，其发光功能层的发光层包括掺杂发光层，所述掺杂发光层由同一种主体蓝色荧光发光材料掺杂同一种客体热激活延迟荧光材料形成；本申请通过把掺杂发光层设计成多层客体材料掺杂浓度不同，且高低掺杂浓度交替的结构，利用热激活延迟材料的发光波峰对掺杂浓度非常敏感的特性，以控制发光材料之间的能量传递，有利于不同发光层发射不同波长以实现多个电致发光波峰，拓宽发光光谱，提高显色指数，实现简化发光层结构和降低生产成本的目的。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，其包括：
    衬底；
    驱动电路层，形成于所述衬底上；
    发光功能层，形成于所述驱动电路层上；
    其中，所述发光功能层的发光层包括掺杂发光层，所述掺杂发光层的主体材料包括蓝色荧光发光材料，客体材料包括热激活延迟荧光材料；所述掺杂发光层包括层叠设置的第一掺杂发光层和第二掺杂发光层，所述第一掺杂发光层和所述第二掺杂发光层中所述客体材料的掺杂浓度不同。
  2. 根据权利要求1所述的OLED显示面板，其中，所述蓝色荧光发光材料的三线态激子能级高于所述热激活延迟荧光材料的单线态激子和三线态激子能级。
  3. 根据权利要求2所述的OLED显示面板，其中，所述蓝色荧光发光材料为二苯乙烯衍生物、三苯乙烯、四苯乙烯衍生物、咔唑类衍生物、硼类或者铍类衍生物中的一种。
  4. 根据权利要求2所述的OLED显示面板，其中，所述热激活延迟荧光材料的分子结构中包括电子给体基团和电子受体基团，所述电子给体基团选自吩噻嗪基团系列、三苯胺基团系列、咔唑基团系列或者吖啶基团系列中的一种或两种以上混合，所述电子受体基团选自二苯甲酮系列、二苯砜基团系列、苯二甲腈基团系列、三苯三嗪基团系列、苯基氧化膦基团系列、氧硫杂蒽氧化系列或者硫杂蒽酮基团系列中的一种。
  5. 根据权利要求1所述的OLED显示面板，其中，所述掺杂发光层还包括第三掺杂发光层，所述第三掺杂发光层设置于所述第二掺杂发光层上。
  6. 根据权利要求5所述的OLED显示面板，其中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
  7. 根据权利要求5所述的OLED显示面板，其中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
  8. 根据权利要求5所述的OLED显示面板，其中，所述掺杂发光层还包括第四掺杂发光层，所述第四掺杂发光层设置于所述第三掺杂发光层上。
  9. 根据权利要求8所述的OLED显示面板，其中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
  10. 根据权利要求8所述的OLED显示面板，其中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
  11. 一种显示装置，其包括OLED显示面板,所述OLED显示面板包括：
    衬底；
    驱动电路层，形成于所述衬底上；
    发光功能层，形成于所述驱动电路层上；
    其中，所述发光功能层的发光层包括掺杂发光层，所述掺杂发光层的主体材料包括蓝色荧光发光材料，客体材料包括热激活延迟荧光材料；所述掺杂发光层包括层叠设置的第一掺杂发光层和第二掺杂发光层，所述第一掺杂发光层和所述第二掺杂发光层中所述客体材料的掺杂浓度不同。
  12. 根据权利要求11所述的显示装置，其中，所述蓝色荧光发光材料的三线态激子能级高于所述热激活延迟荧光材料的单线态激子和三线态激子能级。
  13. 根据权利要求12所述的显示装置，其中，所述蓝色荧光发光材料为二苯乙烯衍生物、三苯乙烯、四苯乙烯衍生物、咔唑类衍生物、硼类或者铍类衍生物中的一种。
  14. 根据权利要求12所述的显示装置，其中，所述热激活延迟荧光材料的分子结构中包括电子给体基团和电子受体基团，所述电子给体基团选自吩噻嗪基团系列、三苯胺基团系列、咔唑基团系列或者吖啶基团系列中的一种或两种以上混合，所述电子受体基团选自二苯甲酮系列、二苯砜基团系列、苯二甲腈基团系列、三苯三嗪基团系列、苯基氧化膦基团系列、氧硫杂蒽氧化系列或者硫杂蒽酮基团系列中的一种。
  15. 根据权利要求11所述的显示装置，其中，所述掺杂发光层还包括第三掺杂发光层，所述第三掺杂发光层设置于所述第二掺杂发光层上。
  16. 根据权利要求15所述的显示装置，其中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
  17. 根据权利要求15所述的显示装置，其中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
  18. 根据权利要求15所述的显示装置，其中，所述掺杂发光层还包括第四掺杂发光层，所述第四掺杂发光层设置于所述第三掺杂发光层上。
  19. 根据权利要求18所述的显示装置，其中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为30%至90%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为1%至10%。
  20. 根据权利要求18所述的显示装置，其中，所述第一掺杂发光层和所述第三掺杂发光层中所述客体材料的掺杂浓度为1%至10%；所述第二掺杂发光层和所述第四掺杂发光层中所述客体材料的掺杂浓度为30%至90%。
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