WO2021068583A1 - 金刚石多线电火花放电切削方法及线切割装置 - Google Patents

金刚石多线电火花放电切削方法及线切割装置 Download PDF

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WO2021068583A1
WO2021068583A1 PCT/CN2020/102014 CN2020102014W WO2021068583A1 WO 2021068583 A1 WO2021068583 A1 WO 2021068583A1 CN 2020102014 W CN2020102014 W CN 2020102014W WO 2021068583 A1 WO2021068583 A1 WO 2021068583A1
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wire
cutting
diamond
cutting device
roller
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PCT/CN2020/102014
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English (en)
French (fr)
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仇健
葛任鹏
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青岛高测科技股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades

Definitions

  • the invention relates to the technical field of diamond cutting, in particular to a diamond multi-wire electric spark discharge cutting method and a wire cutting device.
  • Diamond is commonly known as "diamond diamond", which is the original body of the diamond we often say. It is a mineral composed of carbon and is an allotrope of carbon. Diamond is the hardest substance naturally occurring in nature. Diamond has a wide range of uses, such as handicrafts and cutting tools in industry. Graphite can form synthetic diamonds under high temperature and high pressure. It is also a precious gemstone. Because of the highest hardness, diamond cutting and processing must be done with diamond powder or laser (such as 532nm or 1064nm wavelength laser). The density of diamond is 3.52g/cm. The refractive index is 2.417 (under 500 nm light wave), and the dispersion rate is 0.044.
  • the diamond multi-wire electric discharge cutting method and the wire cutting device can realize the following forms of operation: it can further improve the processing efficiency of diamond multi-wire cutting photovoltaic silicon wafers, reduce the processing cost, and replace the traditional electric discharge machining Combined with diamond multi-wire cutting technology to realize the composite processing of photovoltaic silicon wafers with EDM diamond wire; for the processing quality problems such as surface micro-cracks of semiconductor silicon wafers processed by diamond wire multi-wire cutting, it will be added on the basis of diamond wire multi-wire cutting EDM realizes the improvement of the quality of the machined surface, provides help for its promotion and application in the semiconductor industry, and ultimately makes the overall operation more efficient and convenient.
  • the technical problem to be solved by the present invention is to overcome the existing defects and provide a diamond multi-wire EDM discharge cutting method and a wire cutting device, which can effectively solve the problems in the background art.
  • a diamond multi-wire EDM wire cutting device includes a cutting device main body, the central side of the cutting device main body is provided with a No. 1 cutting roller. One side is provided with a No. 2 cutting roller, the front end of the No. 1 cutting roller is provided with a No. 1 driving spindle, the front end of the No. 2 cutting roller is provided with a No. 2 driving spindle, and the outer surface of the rear end of the No.
  • 1 cutting roller is provided There is a driven spindle, the outer surface of the rear end of the second cutting roller is provided with a second driven spindle, and the outer surface of the upper middle of the main body of the cutting device is provided with a P-type silicon rod.
  • a power feeding roller is arranged between the No. 1 cutting roller and the diamond wire mesh, and one side of the P-type silicon rod is fixedly connected to the positive electrode side of the pulse power supply through a power feeding metal.
  • the P-type silicon rod and the silicon rod sticking plate are connected by a resin plate in an adhesive manner, and a connecting hole is opened on the outer surface of the upper end of the silicon stick sticking plate.
  • the front and rear ends of the No. 1 driving spindle and the No. 2 driving spindle are both provided with connecting flanges.
  • the No. 1 driving spindle is located on the side of the No. 2 driving spindle
  • the No. 1 driven spindle is located on the side of the No. 2 driven spindle.
  • the lower end of the main body of the cutting device is provided with a negative incoming wire
  • a positive incoming wire is arranged between the P-type silicon rod and the pulse power supply
  • an upper end of the negative incoming wire is provided with a diamond wire mesh
  • the The number of negative incoming wires is two groups, and the two groups of negative incoming wires are respectively located on both sides of the lower end of the main body of the cutting device in a symmetrical structure.
  • the upper end of the P-type silicon rod is provided with a silicon rod sticking plate, and the pulse power supply supplies power to the brushes through the negative lead wire.
  • a diamond multi-wire electric spark discharge cutting method includes the following steps:
  • the diamond wire is wound on the two processing rollers through the winding wheel, the tension wheel and the guide wheel, then passes through the guide wheel, the tension wheel and the winding wheel, and finally is wound on the take-up and take-up wheel;
  • the workpiece When wound on the take-up and take-up wheel, the workpiece is connected to the positive pole of the pulse power supply wire, and the diamond wire is connected to the negative pole of the pulse power supply.
  • the diamond wire reciprocates, and the wire mesh formed between the processing roller and the processing roller is ground.
  • EDM can reduce scratches on the silicon surface and avoid diamond wire cutting.
  • the surface microcracks generated on the surface of the silicon wafer improve the surface quality, reduce the cutting force of the diamond wire cutting, reduce the diamond wire wear, inhibit the residual carbon element, and have a higher processing efficiency; it can be realized on the basis of mechanical grinding removal methods.
  • Electrical discharge machining is performed on silicon materials on the upper side; the additional auxiliary power feeding roller realizes the power supply to the diamond wire mesh, and at the same time, it can cut larger diameter silicon material from a spatial perspective; the etching effect of electrical discharge machining forms more scratches on the diamond wire.
  • the processing quality is better than the quality obtained by the diamond wire cutting machine; in the application field, the diamond wire cutting technology and machine tools have been widely used in the photovoltaic silicon wafer application field with low surface quality requirements, but in semiconductor slicing It is difficult to meet the requirements in fields that have significant requirements on processing quality, and cannot be widely used.
  • the technical method of the present invention and the machine tool can obtain higher processing quality and are more suitable for the semiconductor slicing field.
  • the present invention can improve the material removal rate, while mechanically grinding to remove the residual heat affected zone of the EDM, improving the processing quality and the surface performance of the material; With the spark multi-wire cutting equipment, the material removal rate and processing efficiency are greatly increased; the electric discharge wire cutting cannot realize the concentrated slicing of a large load of thousands of slits.
  • the present invention can solve the multi-wire cutting efficiency improvement that cannot be achieved by the electric discharge machining.
  • the new method can greatly improve the cutting efficiency whether it is single wire cutting efficiency or adding multi-wire function.
  • the new method assists EDM on this basis, to a certain extent The above also improves the processing efficiency.
  • the diamond wire cutting is more efficient than free abrasive processing, has less abrasive loss, and the cutting line life is longer; unlike the discharge adsorption abrasive entering the cutting area, the diamond wire is directly Into the cutting area, mechanical removal and electro-erosion removal under the action of electric discharge can significantly improve the efficiency of cutting silicon wafers.
  • the new method can also reduce the width of the incision and reduce the cutting cost.
  • the diamond wire mechanical cutting function of the present invention is the main removal method, and the processing efficiency is higher;
  • the cutting machine is the diamond wire cutting machine with an electric discharge processing device added to the processing Compared with the EDM machine tool, the performance of the machine tool that replaces the diamond wire is more outstanding, and it has higher rigidity and higher accuracy; for the diamond multi-wire cutting machine tool, the number of wire nets will increase significantly, which further improves the cutting efficiency.
  • Figure 1 is a schematic diagram of the overall structure of the multi-wire mechanism of the present invention.
  • Figure 2 is a schematic diagram of the multi-wire composite machining of the EDM diamond wire of the present invention
  • Figure 3 is a schematic diagram of diamond wire cutting
  • FIG. 4 is a schematic diagram of WEDM
  • Figure 5 is an enlarged view of the active spindle of the present invention.
  • Figure 6 is an enlarged view of the sticky board of the silicon rod of the present invention.
  • the present invention provides a method for a diamond multi-wire cutting compound wire EDM process.
  • the principle of diamond wire EDM multi-wire cutting is shown in Figure 1.
  • the cutting device main body 14 is provided with a No. 1 cutting roll 1 on one side, and a No. 2 cutting roll 10 is provided on one side of the No. 1 cutting roll 1.
  • the front end of the roller 1 is provided with a No. 1 driving spindle 7, the front end of the No. 2 cutting roller 10 is provided with a No. 2 driving spindle 8, and the rear end of the No. 1 cutting roller 1 is provided with a No. 1 driven spindle 4 and the No.
  • the outer surface of the rear end is provided with a second driven spindle 6, and the upper middle outer surface of the cutting device main body 14 is provided with a P-type silicon rod 2.
  • the silicon material and the diamond wire are connected to the pulse power supply.
  • the EDM method is added to remove the material.
  • the diamond wire is initially wound on the take-up and take-up wheel, and is wound to the two processing rollers through the wire winding wheel, the tension wheel and the guide wheel. Then through the guide wheel, the tension wheel and the winding wheel, it is finally wound on the take-up and take-up wheel.
  • the workpiece is connected to the positive electrode of the pulse power supply through the positive incoming wire 12, and the diamond wire is connected to the negative electrode of the pulse power supply through the negative incoming wire 13
  • the diamond wire reciprocates, and the wire mesh formed between the processing roller and the processing roller uses grinding and electrical discharge machining methods to cut the silicon material into silicon wafers.
  • the diamond wire is initially wound on the take-up and take-up wheel, and is wound on the two processing rollers after the winding wheel, the tension wheel and the guide wheel. After the guide wheel, the tension wheel and the winding wheel, it is wound at the end.
  • the diamond wire reciprocates, and the cutting wire net formed between the processing roller and the processing roller cuts the silicon material into silicon wafers by grinding.
  • the instantaneous high temperature generated by the pulsed spark discharge between the reciprocating molybdenum wire or the single-wire movement of the copper wire and the workpiece is used to realize the brittleness and cracking of the silicon material caused by local gassing, melting or thermal stress to achieve processing.
  • the purpose of the electrode wire is to start from the wire tube and wind the wire tube through the guide wheel, the guide wheel and the guide wheel.
  • the negative electrode of the pulse power supply is connected to the electrode wire, and the positive electrode of the pulse power supply is connected to the silicon material.
  • Movement using the discharge between the electrode wire and the silicon material to realize the silicon material cutting.
  • the present invention is a combination of diamond multi-wire cutting and electric discharge machining.
  • the electric discharge machining device is added on the basis of the original diamond multi-wire cutting. Compared with the diamond wire multi-wire cutting technology and machine tools, it is the basis of the diamond wire multi-wire cutting grinding removal method.
  • the EDM removal method is added to improve the processing efficiency.
  • the composite machining machine tool adds an EDM device on the basis of the diamond wire multi-wire cutting equipment, including a pulse power supply, a power supply device, etc., and an auxiliary device is added to the structure.
  • the power feeding roller adopts a three-roller structure.
  • the machined surface is composed of diamond cutting scratches and electric discharge etching pits. After the method is applied, the accuracy and quality obtained are higher.
  • the technical method of the present invention is compared with the machine tool.
  • Cutting technology and machine tools are more suitable for semiconductor slicing.
  • mechanical grinding removal methods are added on the basis of EDM silicon material removal methods, and the material removal methods are different.
  • the diamond wire cutting technology that integrates electrical discharge machining has higher cutting efficiency.
  • the processing machine tool is also different from the EDM machine tool.
  • a multi-wire cutting mechanism has been added, and the form of the machine tool has also undergone great changes.
  • the cutting equipment line network The number has increased significantly.
  • the technology of the present invention uses electrical discharge machining to realize wire cutting by electric discharge, and uses diamond wire for grinding and grinding.
  • the two machining methods of EDM pulse etching remove materials together and improve the cutting effect.
  • the wire EDM method and equipment of replacing the diamond wire it is different from the EDM method of replacing the diamond wire and the machine tool of the EDM machine.
  • the technology of the present invention uses diamond wire cutting as the main removal method, assists in the use of electrical discharge machining to achieve double removal of materials, and at the same time, adds a pulse electrical discharge machining device to the diamond multi-wire saw machine tool to form a brand-new diamond multi-wire saw electric spark Processing equipment, and simplify the structure of the improved machine tool based on it, make the structure compact, can achieve efficient cutting while obtaining better processing quality, provide help for its promotion and application in the semiconductor industry, and ultimately make the overall operation More efficient and convenient.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

金刚石多线电火花放电切削线切割装置，包括切割装置主体（14），切割装置主体（14）的中部一侧设置有一号切割辊（1），一号切割辊（1）的一侧设置有二号切割辊（10），一号切割辊（1）的前端设置有一号主动主轴（7），二号切割辊（10）的前端设置有二号主动主轴（8），一号切割辊（1）的后端外表面设置有一号从动主轴（4），二号切割辊（10）的后端外表面设置有二号从动主轴（6）。

Description

金刚石多线电火花放电切削方法及线切割装置 技术领域
本发明涉及金刚石切割技术领域，具体为金刚石多线电火花放电切削方法及线切割装置。
背景技术
金刚石俗称“金刚钻”，也就是我们常说的钻石的原身，它是一种由碳元素组成的矿物，是碳元素的同素异形体。金刚石是自然界中天然存在的最坚硬的物质，金刚石的用途非常广泛，例如：工艺品、工业中的切割工具。石墨可以在高温、高压下形成人造金刚石，也是贵重宝石，由于硬度最高，金刚石的切削和加工必须使用钻石粉或激光(比如532nm或者1064nm波长激光)来进行，金刚石的密度为3.52g/cm，折射率为2.417(在500纳米光波下)，色散率为0.044。
在实际的使用过程中，金刚石多线电火花放电切削方法及线切割装置可实现以下形式的操作：能够进一步提高金刚石多线切割光伏硅片的加工效率，降低加工成本，将传统电火花放电加工与金刚石多线切割技术相结合实现电火花金刚石线复合加工光伏硅片；针对金刚线多线切割加工半导体硅片的加工表面微裂纹等加工质量问题，将在金刚线多线切割的基础上加入电火花放电加工实现加工表面的质量提升，为其在半导体行业的推广应用提供帮助，最终使得整体的操作更加高效、便捷。
现有的金刚石多线电火花放电切削方法及线切割装置虽结构简单，操作方便，但是功能单一，且单一的加工方式导致实际使用的效率较低，且容易造成半导体硅片的加工表面出现微裂纹，进而导致整体的加工工艺水平难以提高，为此，我们提出金刚石多线电火花放电切削方法及线切割装置。
发明内容
本发明要解决的技术问题是克服现有的缺陷，提供金刚石多线电火花放 电切削方法及线切割装置，可以有效解决背景技术中的问题。
为实现上述目的，本发明提供如下技术方案：金刚石多线电火花放电切削线切割装置，包括切割装置主体，所述切割装置主体的中部一侧设置有一号切割辊，所述一号切割辊的一侧设置有二号切割辊，所述一号切割辊的前端设置有一号主动主轴，所述二号切割辊的前端设置有二号主动主轴，所述一号切割辊的后端外表面设置有一号从动主轴，所述二号切割辊的后端外表面设置有二号从动主轴，所述切割装置主体的上端中部外表面设置有P型硅棒。
优选的，所述一号切割辊与金刚线网之间设置有进电辊，所述P型硅棒的一侧与脉冲电源的正极一侧通过进电金属固定连接。
优选的，所述P型硅棒与硅棒粘板之间通过树脂板采用胶粘的方式联接，所述硅棒粘板的上端外表面开设有连接孔。
优选的，所述一号主动主轴与二号主动主轴的前端与后端均设置有连接法兰。
优选的，所述一号主动主轴位于二号主动主轴的一侧，所述一号从动主轴位于二号从动主轴的一侧。
优选的，所述切割装置主体的下端一侧设置有负极进电线，所述P型硅棒与脉冲电源之间设置有正极进电线，所述负极进电线的上端设置有金刚线网，所述负极进电线的数量为两组，且两组负极进电线分别位于切割装置主体下端两侧呈对称结构。
优选的，所述P型硅棒的上端设置有硅棒粘板，所述脉冲电源通过负极进电线为电刷供电。
一种金刚石多线电火花放电切削方法，包括以下步骤：
S1、金刚线经排线轮、张力轮和导向轮，缠绕到两个加工辊，再经过导向轮、张力轮和排线轮，最后缠绕到收放线轮上；
S2、当缠绕到收放线轮上，工件接到脉冲电源进电线正极上，金刚线接到脉冲电源负极上，金刚线往复运动，在加工辊和加工辊之间形成的线网利用磨削方式和放电加工方式将硅料切割成硅片。
与现有技术相比，本发明的有益效果是：
1、本发明与金刚线多线切割技术和机床相比，固定磨料金刚石线锯+电火花线切割＝金刚石线锯电火花复合加工，放电加工可以减少硅表面的划痕，避免金刚石线切割在硅片表面产生的表面微裂纹，改善了表面质量，减小金刚线切割的切削力，降低了金刚线磨损，抑制碳元素的残留，加工效率更高；可以实现在机械磨削去除方式的基础上对硅材料进行放电加工；增加的辅助进电辊实现对金刚石线网的进电，同时从空间上看可以切割更大直径的硅料；放电加工的蚀刻作用在金刚石线划痕上形成更均匀凹坑，加工质量较金刚石线切割机获得的质量更好；应用领域上，以往金刚线切割技术和机床在对表面质量要求较低的光伏硅片应用领域得到了普遍应用，但在半导体切片等对加工质量有显著要求的领域很难满足要求，无法得到普及应用，本发明技术方法和机床相比金刚线切割技术和机床获得的加工质量更高，更适用于半导体切片领域。
2、本发明与电火花多线切割技术和电火花加工机床相比，可以提高材料去除率，同时机械磨削去除电火花放电残留的热影响区，提高加工质量和材料表面性能；相对于电火花多线切割设备，材料去除率和加工效率大幅增加；电火花线切割无法实现大装载量上千个切缝的集中切片，本发明可以解决电火花加工无法实现的多线切割效率提升，相比于传统电火花线切割，新方法无论是在单线切割效率还是增加多线功能都可大幅提高切割效率，相比于金刚石多线切割，新方法在此基础上辅助电火花放电加工，一定程度上也提高了加工效率。
3、本发明与静电吸附游离磨料加工方法和装备相比，金刚石线切割比游 离磨料加工效率更高、磨料损耗更少、切割线寿命更长；不同于放电吸附磨料进入切割区，金刚线直接进入切割区在放电作用下机械去除和电蚀去除，可以显著提升切割硅片的效率，新方法还可以降低切口宽度，降低切割成本。
4、本发明与更换金刚石线的电火花线切割方法和设备相比，金刚线机械切割作用为主去除方式，加工效率更高；切割机床为金刚线切割机床的基础上增加放电加工装置，加工设备较电火花加工机床更换金刚石线的机床性能更突出，表现为刚度更高，精度更高；对于金刚石多线切割机床，线网数量会明显增多，进一步提升切割效率。
附图说明
图1为本发明的多线机构整体结构示意图；
图2为本发明的电火花金刚石线多线复合加工示意图；
图3为金刚石线切割示意图；
图4为电火花线切割示意图；
图5为本发明主动主轴的放大图；
图6为本发明硅棒粘板的放大视图；
图中：1、一号切割辊；2、P型硅棒；3、硅棒粘板；4、一号从动主轴；5、脉冲电源；6、二号从动主轴；7、一号主动主轴；8、二号主动主轴；9、进电辊；10、二号切割辊；11、金刚线网；12、正极进电线；13、负极进电线；14、切割装置主体。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要说明的是，术语“上”、“下”、“内”、“外” “前端”、“后端”、“两端”、“一端”、“另一端”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“设置有”、“连接”等，应做广义理解，例如“连接”，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一：
本发明提出一种金刚石多线切割复合电火花线切割工艺的方法。金刚石线电火花多线切割原理如图1所示，所述切割装置主体14的中部一侧设置有一号切割辊1，一号切割辊1的一侧设置有二号切割辊10，一号切割辊1的前端设置有一号主动主轴7，二号切割辊10的前端设置有二号主动主轴8，一号切割辊1的后端外表面设置有一号从动主轴4，二号切割辊10的后端外表面设置有二号从动主轴6，切割装置主体14的上端中部外表面设置有P型硅棒2，在金刚线多线切割机的基础上为硅料和金刚线接入脉冲电源，在金刚线磨削去除方式的基础上加入电火花放电加工去除材料的方式，金刚线起初缠绕在收放线轮上，经排线轮、张力轮和导向轮，缠绕到两个加工辊，再经 导向轮、张力轮和排线轮，最后缠绕到收放线轮上，工件通过正极进电线12接到脉冲电源负极进电线13正极上，金刚线通过负极进电线13接到脉冲电源负极上，金刚线往复运动，在加工辊和加工辊之间形成的线网利用磨削方式和放电加工方式将硅料切割成硅片。
实施例二：
如图3所示，金刚线起初缠绕在收放线轮上，经排线轮、张力轮和导向轮，缠绕到两个加工辊和，在经导向轮、张力轮和排线轮，最后缠绕到收放线轮上，金刚线往复运动，在加工辊和加工辊之间形成的切割线网通过磨削方式将硅料切割成硅片。
实施例三：
如图4所示，利用往复运动的钼丝或单线运动的铜丝与工件之间脉冲性火花放电产生的瞬间高温实现硅材料局部气话、熔化或热应力引起的脆性崩裂蚀除而实现加工的目的，电极丝从丝筒出发经导轮、导轮和导轮缠绕回丝筒，脉冲电源负极接电极丝，脉冲电源正极接硅料，电极丝单向(铜丝)或往复(钼丝)运动，利用电极丝与硅料之间放电实现硅料切割。
本发明是金刚石多线切割与放电加工的结合，在原有金刚石多线切割基础上增加放电加工装置，与金刚线多线切割技术和机床相比，在金刚线多线切割磨削去除方式的基础上增加了电火花放电蚀除去除方式，提升加工效率，复合加工机床在金刚线多线切割设备的基础上增加了电火花放电装置，包括脉冲电源、进电装置等，在结构上增加了辅助进电辊，采用三辊结构，加工表面由金刚石切削划痕和放电刻蚀凹坑组成，方法应用后获得的精度和质量更高，应用领域上，本发明技术方法和机床相比，金刚线切割技术和机床更适用于半导体切片，与电火花多线切割技术和电火花加工机床相比，在电火花放电蚀除硅材料方式的基础上增加了机械磨削去除方式，材料去除方式不同，集成了放电加工的金刚线切割技术切削效率更高，加工机床也不同于电 火花加工机床，相比电火花线切割增加了多线切割机构，机床形式也发生了很大变化，切割设备线网数量明显增加，与静电吸附游离磨料加工方法和装备相比，不同于利用静电吸附作用将游离磨料带入加工区的方法，本发明技术利用放电加工实现电火花线切割，利用金刚线磨削和电火花脉冲刻蚀两种加工方式共同去除材料，提高切割作用，与更换金刚石线的电火花线切割方法和设备相比，不同于电火花放电加工机床更换金刚石线的电火花加工方法及其机床，本发明技术以金刚石线切割为主去除方式，辅助运用放电加工，实现材料的双重去除，同时，在金刚石多线锯机床的基础上增加脉冲放电加工装置，形成全新的金刚石多线锯电火花加工装备，并在其基础上并简化改进功能后的机床结构，使结构紧凑，可以在实现高效切割同时获得更好的加工质量，为其在半导体行业的推广应用提供帮助，最终使得整体的操作更加高效、便捷。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。

Claims (8)

  1. 金刚石多线电火花放电切削线切割装置，包括切割装置主体(14)，其特征在于：所述切割装置主体(14)的中部一侧设置有一号切割辊(1)，所述一号切割辊(1)的一侧设置有二号切割辊(10)，所述一号切割辊(1)的前端设置有一号主动主轴(7)，所述二号切割辊(10)的前端设置有二号主动主轴(8)，所述一号切割辊(1)的后端外表面设置有一号从动主轴(4)，所述二号切割辊(10)的后端外表面设置有二号从动主轴(6)，所述切割装置主体(14)的上端中部外表面设置有P型硅棒(2)。
  2. 根据权利要求1所述的金刚石多线电火花放电切削线切割装置，其特征在于：所述一号切割辊(1)与金刚线网(11)之间设置有进电辊(9)，所述P型硅棒(2)的一侧与脉冲电源(5)的正极一侧通过进电金属固定连接。
  3. 根据权利要求1所述的金刚石多线电火花放电切削线切割装置，其特征在于：所述P型硅棒(2)与硅棒粘板(3)之间通过树脂板采用胶粘的方式联接，所述硅棒粘板(3)的上端外表面开设有连接孔。
  4. 根据权利要求1所述的金刚石多线电火花放电切削线切割装置，其特征在于：所述一号主动主轴(7)、二号主动主轴(8)的前端与后端均设置有连接法兰。
  5. 根据权利要求1所述的金刚石多线电火花放电切削线切割装置，其特征在于：所述一号主动主轴(7)位于二号主动主轴的一侧，所述一号从动主轴(4)位于二号从动主轴(6)的一侧。
  6. 根据权利要求2所述的金刚石多线电火花放电切削线切割装置，其特征在于：所述切割装置主体(14)的下端一侧设置有负极进电线(13)，所述P型硅棒(2)与脉冲电源(5)之间设置有正极进电线(12)，所述负极进电线(13)的上端设置有金刚线网(11)，所述负极进电线(13)的数量为两组，且两组负极进电线(13)分别位于切割装置主体(14)下端两侧呈 对称结构。
  7. 根据权利要求6所述的金刚石多线电火花放电切削线切割装置，其特征在于：所述P型硅棒(2)的上端设置有硅棒粘板(3)，所述脉冲电源(5)通过负极进电线(13)为电刷供电。
  8. 根据权利要求7所述的金刚石多线电火花放电切削方法，其特征在于，包括以下步骤：
    (S1)金刚线经排线轮、张力轮和导向轮，缠绕到两个加工辊，再经过导向轮、张力轮和排线轮，最后缠绕到收放线轮上；
    (S2)当缠绕到收放线轮上，工件接到脉冲电源进电线(12)正极上，金刚线接到脉冲电源负极进电线(13)上，金刚线往复运动，在加工辊和加工辊之间形成的线网利用磨削方式和放电加工方式将硅料切割成硅片。
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