WO2021065884A1 - グラフェン受光素子、及びその作製方法 - Google Patents

グラフェン受光素子、及びその作製方法 Download PDF

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WO2021065884A1
WO2021065884A1 PCT/JP2020/036834 JP2020036834W WO2021065884A1 WO 2021065884 A1 WO2021065884 A1 WO 2021065884A1 JP 2020036834 W JP2020036834 W JP 2020036834W WO 2021065884 A1 WO2021065884 A1 WO 2021065884A1
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graphene
electrode
light
receiving element
light receiving
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French (fr)
Japanese (ja)
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英之 牧
健太 下村
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Keio University
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Keio University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials

Definitions

  • the present invention relates to a graphene light receiving element and a method for producing the same.
  • Graphene is a two-dimensional substance that has a structure in which a six-membered ring structure of carbon is connected and has a thickness of one atomic layer. It is known that a light receiving element using graphene as a light receiving layer can correspond to a wide wavelength range because it has characteristics such as absorbing light at a constant absorption rate regardless of wavelength due to linear band dispersion. Further, it is known that it can be manufactured on various substrates such as a silicon substrate, and that a high-speed light receiving element can be obtained.
  • a light receiving element can be manufactured by connecting a pair of electrodes to graphene.
  • the energy band has a gradient at the interface between the electrode and graphene due to the difference in the work function between the electrode metal and graphene. Since the directions of this gradient are opposite between the electrodes, the photovoltages or photocurrents generated by the incident of light cancel each other out.
  • FIG. 1 is a diagram for explaining the cancellation of photovoltage or photocurrent that occurs in a general graphene light receiving element.
  • the entire graphene light receiving element in which graphene G is arranged between the two electrode ELs is irradiated, electrons or holes are generated at the interface between the electrodes and graphene, and a photovoltage is generated only in the vicinity of the interface.
  • FIG. 1A the positive and negative of the light voltage generated at the interface between one electrode and graphene and the light voltage generated at the interface between the other electrode and graphene are reversed, canceling each other out, and the sensitivity is remarkably high. descend.
  • the conventional graphene light receiving element in order to detect light, it is necessary to collect the light incident on the light receiving element with a lens and irradiate only the vicinity of the electrode on one side. Since near-infrared light and mid-infrared light cannot be detected by the naked eye or a silicon-based image sensor, it is not easy to collect the light and irradiate only the vicinity of one electrode.
  • the method of forming electrodes with metals having different work functions complicates the device fabrication process because the electrodes are formed separately with different metal materials.
  • precious metal materials such as Pd and Au are used as electrode materials having a "high" work function, which increases the cost.
  • As the electrode material having a “low” work function easily oxidizable metals such as Ca, Mg, and Sc are used, and device damage due to oxidation is likely to occur. Metals with a low work function are also expensive and costly depending on the material.
  • An object of the present invention is to provide a graphene light receiving element capable of detecting light without condensing light, and a light receiving element array using the graphene light receiving element.
  • first electrode and the second electrode are made of the same conductive material, and the first electrode and the second electrode are made of the same conductive material.
  • the first electrode and the second electrode have an asymmetric structure in the interface region with the graphene.
  • one of the first electrode and the second electrode has a light-shielding mask covering the interface region with graphene.
  • the first electrode and the second electrode have different planar shapes in the interface region.
  • a graphene light receiving element capable of detecting light without condensing light is provided by forming a pair of electrodes connected to graphene with the same type of material and giving asymmetry to the structure of the electrodes.
  • the "structure" of an electrode includes the shape and configuration of the electrode and its surroundings.
  • FIG. 2 is a diagram illustrating a basic configuration of the first embodiment.
  • a light-shielding mask is provided only above the interface between one electrode and graphene among the pair of electrodes to block the incident light, and the configuration around the electrodes is made asymmetric.
  • the graphene light receiving element 10 has a pair of electrodes 11 and 12, a graphene 15 arranged between the electrodes, and a light shielding mask 13 that covers the interface between one electrode (for example, the electrode 11) and the graphene 15 and its vicinity.
  • the electrode 11 and the electrode 12 are made of the same material.
  • the light-shielding mask 13 is arranged on the incident side of light to the graphene light receiving element 10, and is arranged above the interface between one of the electrodes 11 and the graphene 15 when viewed in the stacking direction of the elements, for example.
  • the light shielding mask 13 blocks the light from entering the graphene portion located near the electrode 11, and no light voltage is generated at the interface between the electrode 11 and the graphene 15.
  • light is incident on other parts of the graphene light receiving element 10, and as shown in FIG. 2A, a light voltage is generated at the interface between the electrode 12 and the graphene 15.
  • the optical voltage is drawn as a potential difference between the positive side and the negative side. By detecting this light voltage, the amount of incident light can be obtained.
  • the light voltage generated in the graphene light receiving element 10 also includes a light voltage (light voltage due to the thermoelectric effect) generated by a temperature gradient generated near the graphene-electrode interface when light is irradiated.
  • a light voltage light voltage due to the thermoelectric effect
  • the temperature gradients at the graphene-electrode interface are opposite to each other, and the positive and negative of the generated light voltage are opposite as shown in FIG. 1 (a).
  • the light voltage can be detected even when a temperature gradient is generated near the graphene-electrode interface.
  • optical voltage shall include both optical voltage due to the formation of electron-hole pairs and optical voltage due to the thermoelectric effect.
  • Graphene 15 has a high electron mobility of 10 or more of silicon, and can respond to the generation of photovoltage or photocurrent at high speed.
  • FIG. 3A is an optical microscope image of the graphene light receiving element 10 of the first embodiment
  • FIG. 3B is a schematic cross-sectional view of a light receiving region of the graphene light receiving element 10.
  • the electrodes 11 and 12 are made of the same metal material, for example titanium (Ti).
  • a graphene film (denoted as "Graphene” in the figure) is connected between the electrodes 11 and 12.
  • a nickel (Ni) light-shielding mask 13 is arranged so as to cover the interface between one electrode 11 and graphene.
  • the light-shielding mask 13 may be formed of a semiconductor or an insulator that absorbs light.
  • the graphene 15 is arranged on the insulating film 102 formed on the substrate 101.
  • the substrate 101 is an arbitrary substrate that can support the graphene light receiving element 10, such as a semiconductor substrate, a ceramics substrate, a glass substrate, and a quartz substrate.
  • the insulating film 102 is, for example, a silicon oxide film.
  • the graphene 15 may be directly formed and patterned on the insulating film 102 by a CVD method or the like, or the graphene film grown on another substrate may be peeled off by a mechanical peeling method and transferred onto the insulating film 102. Good.
  • the electrode 11 and the electrode 12 are connected to the graphene 15. Any electrode material may be used for the electrode 11 and the electrode 12 as long as they are good conductors, and V, Pd, Pt, Au, Ag, Ir, Mo, Ru, Cu, Al and the like are used in addition to Ti. ..
  • the electrode 11 and the electrode 12 do not necessarily have to be arranged on the upper side of the graphene 15 in the stacking direction, and a thin film of the graphene 15 may be arranged on the electrode 11 and the electrode 12.
  • the light-shielding mask 13 covers the interface between the electrode 11 and the graphene 15.
  • an insulating film 17 is inserted between the light-shielding mask 13 and the electrodes 11, 12, and graphene 15. As a result, it is possible to avoid the diversion of the current to the light shielding mask 13.
  • the insulating film 17 may be formed of an inorganic material or an organic material as long as it has electrical insulating properties.
  • the insulating film 17 is made of aluminum oxide (Al 2 O 3 ).
  • the shading mask 13 is made of a metal that reflects light of the wavelength used
  • various metals such as Ni, Ti, Pd, Au, Al, Cr, and Cp can be used.
  • the light-shielding mask 13 is formed of a semiconductor that does not transmit light of the wavelength used, Si, Ge, an oxide semiconductor, or the like can be used.
  • the light-shielding mask 13 When the light-shielding mask 13 is formed of an insulator that is opaque to the wavelength used, the light-shielding mask 13 may be arranged directly on the electrode 11. Also in this case, the light-shielding mask 13 is provided so as to cover the interface region between the electrode 11 and the graphene 15. Quartz may be used as an insulator that absorbs light of the wavelength used.
  • the light-shielding mask 13 is not limited to a film made of an inorganic material, and may be formed of a polymer material such as a resist as long as it is opaque to the wavelength used.
  • FIGS. 5A and 5B are diagrams for explaining the operating principle of the graphene light receiving element 10.
  • the conduction band and valence band of graphene can be simulated by a symmetric cone whose vertices meet at the dilac point (K or K'point in the reciprocal space). Since the conduction band and the valence band intersect at the Dirac point and have no band gap, graphene can absorb even light with a small energy in the infrared region. That is, it absorbs light having a wide wavelength from infrared light to ultraviolet light.
  • a gradient occurs in the energy band at the interface between the metal (for example, Pd) and graphene.
  • the inclination of the band is opposite between the electrodes.
  • the graphene light receiving element 10 has an asymmetrical structure around the electrodes. Even if the entire graphene light receiving element 10 is irradiated, the interface between one electrode and graphene is partially irradiated.
  • the graphene light receiving element when the graphene light receiving element is not connected to the circuit, a potential difference occurs at the interface between graphene and the metal, and the bending of the band changes as shown by the broken line.
  • the voltage generated at this time is called the optical voltage.
  • the electrons excited in the conduction band go around the circuit along the gradient of the band, and a current is generated.
  • This current is called photocurrent. Since the carrier moves only at the interface between one electrode and graphene, the cancellation of photocurrents between the electrodes is suppressed, and the incident light can be detected with high sensitivity.
  • the photovoltage and photocurrent can also be generated by the thermoelectric effect due to the temperature gradient near the electrode-graphene interface generated by light irradiation. Due to the asymmetry of the present invention, the cancellation of photovoltage or photocurrent due to the thermoelectric effect is also suppressed, and light can be detected.
  • FIG. 6 shows the mapping measurement result of visible light detection by the produced graphene light receiving element 10. This mapping measurement is for investigating in which part of the produced graphene light receiving element 10 having an asymmetric structure the optical voltage is obtained (position dependence of the optical voltage).
  • a laser beam having a wavelength of 690 nm in the visible light region is focused by an objective lens, the focused light is scanned, and the optical voltage value generated at each scanning point is mapped.
  • a light voltage of +13 ⁇ V is measured at the interface between the Ti electrode and graphene on the side without the light-shielding mask, and the voltage value decreases as the distance from the interface increases.
  • a light voltage of -7 ⁇ V is measured at the interface between the Ti electrode and graphene.
  • the magnitude (absolute value) of the optical voltage decreases as the distance from the interface increases.
  • the reason why the light voltage with the opposite sign was measured on the side of the Ni mask is that part of the incident light passed through the Ni mask and reached the graphene-electrode interface.
  • the magnitude (absolute value) of the optical voltage generated on the Ni mask side is about half the magnitude (absolute value) of the optical voltage generated at the graphene-electrode interface on the opposite side, and the optical voltage. It is possible to suppress the cancellation of each other.
  • FIG. 7 shows the measurement result of the visible light detection signal obtained by the graphene light receiving element 10 by the spectrum analyzer. Unlike the confirmation of the position dependence of the optical voltage in FIG. 6, the entire graphene light receiving element 10 is irradiated, and the detection signal output from the graphene light receiving element 10 is measured. Due to the asymmetrical configuration of FIGS. 3A and 3B, it is confirmed that visible light can be detected even when the entire graphene light receiving element 10 is irradiated without condensing light.
  • FIG. 8 shows the mapping measurement result of infrared light detection by the graphene light receiving element 10.
  • a laser beam having a wavelength of 1310 nm in the infrared region is focused by an objective lens, the focused light is scanned, and the optical voltage value generated at each scanning point is mapped.
  • a light voltage of +3.63 ⁇ V is measured at the interface between the Ti electrode and graphene on the side without the light-shielding mask, and the voltage value decreases as the distance from the interface increases.
  • a light voltage of -1.39 ⁇ V is measured at the interface between the Ti electrode and graphene.
  • the magnitude (absolute value) of the optical voltage decreases as the distance from the interface increases.
  • the reason why the light voltage with the opposite sign was measured on the side of the Ni mask is that part of the infrared light passed through the Ni mask and reached the graphene-electrode interface.
  • the magnitude (absolute value) of the optical voltage generated on the Ni mask side is a little less than 40% of the magnitude (absolute value) of the optical voltage generated at the graphene-electrode interface on the opposite side, and the light is light. It is possible to suppress the cancellation of voltage.
  • FIG. 9 shows the measurement result of the infrared light detection signal obtained by the graphene light receiving element 10 by the spectrum analyzer.
  • the entire graphene light receiving element 10 is irradiated with infrared light (laser light having a wavelength of 1547 nm), and the infrared light detection signal output from the graphene light receiving element 10 is measured. To do. Due to the asymmetrical configuration of FIGS. 3A and 3B, it is confirmed that infrared light can be detected even when the entire graphene light receiving element 10 is irradiated without focusing.
  • the asymmetric structure that covers only one electrode-graphene interface with the light-shielding mask 13 makes it possible to detect light in a wide wavelength range that covers ultraviolet light, infrared light, and even the terahertz band without focusing. ..
  • FIG. 10 is a diagram illustrating a basic configuration of the second embodiment.
  • the contact area between one electrode and graphene of the pair of electrodes is made larger than the contact area between the other electrode and graphene, thereby making the electrode shape asymmetric.
  • the graphene light receiving element 20 has a pair of electrodes 21 and 22 and a graphene 25 arranged between the electrodes.
  • the electrode 21 and the electrode 22 are made of the same material, but have different planar shapes. Since the electrode 21 and the electrode 22 can be formed at the same time in the same process, there is no increase in the manufacturing process.
  • the electrode 22 may have a plurality of comb teeth and be designed so that the contact area at the interface with the graphene 25 is larger than the contact area between the electrode 21 and the graphene 25.
  • the light voltage generated at the interface between the electrode 22 and the graphene 25 is generated at the interface between the electrode 21 and the graphene 25 as shown in FIG. 10A. It becomes larger than the optical voltage.
  • the optical voltage is drawn as the voltage difference between the positive side and the negative side. The positive and negative of the optical voltage generated at the interface between the two electrodes and graphene are opposite, but the magnitude (absolute value) of the optical voltage is different, so that the optical voltage can be detected.
  • the electrons and holes generated by light absorption move along the gradient of the band at the electrode-graphene interface.
  • the electrons generated at the interface between the electrode 21 and the graphene 25 move to the graphene 25 side, and the photocurrent I 1 flows.
  • the electrons generated at the interface between the electrode 22 and the graphene 25 move to the graphene 25 side, and the photocurrent I 2 flows. Even if the direction of the flowing photocurrent is opposite, the photocurrent can be observed because the magnitude is different.
  • FIG. 11A is an optical microscope image of the graphene light receiving element 20 of the second embodiment
  • FIG. 11B is a schematic cross-sectional view of a light receiving region of the graphene light receiving element 20.
  • the electrode 21 and the electrode 22 are made of the same metal material, for example, titanium (Ti), but the planar shape of the electrode at the interface with graphene is different.
  • the graphene film (denoted as "Graphene” in the figure) is in contact with the comb teeth of one electrode 22 and the tip of the other electrode 21.
  • the graphene 25 is arranged on the insulating film 102 formed on the substrate 101.
  • the substrate 101 is an arbitrary substrate that can support the graphene light receiving element 20, such as a semiconductor substrate, a ceramics substrate, a glass substrate, and a quartz substrate.
  • the insulating film 102 is, for example, a silicon oxide film.
  • the graphene 25 may be directly formed and patterned on the insulating film 102 by a CVD method or the like, or the graphene film grown on another substrate may be peeled off by a mechanical peeling method and transferred onto the insulating film 102. Good.
  • the electrode 21 and the electrode 22 are connected to the graphene 25.
  • the electrode 22 is in contact with the graphene 25 with a plurality of comb teeth.
  • the electrode 21 is in contact with the graphene 25 in a region of protrusions thicker than the comb teeth of the electrode 22.
  • the contact area between the electrode 21 and the electrode 22 is different from that of the graphene 25.
  • the electrode 11 and the electrode 12 do not necessarily have to be arranged above the graphene 15 in the stacking direction, and if they are arranged so as to cover the comb teeth at the tip of the electrode 22 and the protrusion at the tip of the electrode 21, the electrode 22 and the electrode are arranged.
  • a thin film of graphene 25 may be placed on top of 21.
  • the entire graphene light receiving element 20 may be covered with an insulating transparent protective film that transmits the wavelength to be used.
  • FIG. 12 shows the mapping measurement result of visible light detection by the produced graphene light receiving element 20.
  • a laser beam having a wavelength of 690 nm in the visible light region is focused by an objective lens, the focused light is scanned, and the light voltage at each scanning point is detected. The value is mapped.
  • a light voltage of +1.03 ⁇ V is measured at the interface between the comb teeth of the electrode 22 and graphene, and the voltage value decreases as the distance from the interface increases.
  • a light voltage of ⁇ 1.39 ⁇ V is measured at the interface between the protrusion of the electrode 21 and graphene.
  • the magnitude (absolute value) of the optical voltage decreases as the distance from the interface increases.
  • FIG. 13 shows the measurement result of the visible light detection signal obtained by the graphene light receiving element 20 by the spectrum analyzer. Unlike the confirmation of the position dependence of the optical voltage in FIG. 12, the entire graphene light receiving element 20 is irradiated and the detection signal output from the graphene light receiving element 20 is measured. Due to the asymmetrical configuration of FIGS. 11A and 11B, it is confirmed that visible light can be detected even when the entire graphene light receiving element 20 is irradiated without condensing light.
  • FIG. 14 shows the mapping measurement result of infrared light detection by the graphene light receiving element 20.
  • a laser beam having a wavelength of 1310 nm in the infrared region is focused by an objective lens, the focused light is scanned, and the optical voltage value generated at each scanning point is mapped.
  • a light voltage of +5.85 ⁇ V is measured at the interface between the comb teeth of the electrode 22 and graphene, and a light voltage of ⁇ 7.59 ⁇ V is measured at the interface between the protrusion of the electrode 21 and graphene.
  • the magnitude (absolute value) of the optical voltage decreases as the distance from the interface increases.
  • FIG. 15 shows the measurement result of the infrared light detection signal obtained by the graphene light receiving element 20 by the spectrum analyzer.
  • the entire graphene light receiving element 20 is irradiated with infrared light (laser light having a wavelength of 1547 nm), and the infrared light detection signal output from the graphene light receiving element 20 is measured. To do. A clear peak is observed in the output signal. Due to the asymmetric structure of FIGS. 11A and 11B, it is confirmed that infrared light can be detected even when the entire graphene light receiving element 20 is irradiated without focusing.
  • the measurement results at the wavelengths of visible light and near-infrared light are shown, but in reality, the light is received in a very wide range covering the ultraviolet region, the infrared region, and the terahertz region. It can be applied.
  • the configuration of the first embodiment and the configuration of the second embodiment may be combined.
  • the area of the interface of the electrode in contact with graphene may be asymmetrical, and a light-shielding mask may be provided on the electrode having the smaller interface area. In this case, the difference in magnitude between the photovoltage generated between the two electrodes or the flowing photocurrent increases, and the detection sensitivity is further improved.
  • the shape is not limited to the comb tooth shape, and one electrode has an arbitrary shape such as a corrugated shape or a saw tooth shape that can increase the contact area with graphene. It may be. In this case as well, the asymmetric electrode can be easily formed in one step.
  • the first embodiment and the second embodiment it is not necessary to arrange an optical system for condensing light such as an objective lens, and the configuration of the graphene light receiving element is simplified. Further, in the light receiving element controlled by the work function, there are few options when different materials of the pair of electrodes are used, and there is a problem in cost and durability. However, in the embodiment, the degree of freedom in material selection is high, and the structure is simple. A graphene light receiving element can be manufactured at low cost.
  • FIG. 16 is a schematic plan view of the light receiving element array 50 using the graphene light receiving element of the embodiment.
  • the graphene light receiving element 10 of the first embodiment is arranged two-dimensionally on the substrate 101, but the graphene light receiving element 20 of the second embodiment may be arranged two-dimensionally.
  • the light receiving element array 50 functions as a two-dimensional imaging device.
  • Infrared region imaging has a wide range of applications such as night vision cameras and cameras for autonomous driving, and is drawing attention.
  • an image sensor using a bolometer is mainly used for uncooled ones, but the efficiency is low, and the structure of the element is complicated and expensive.
  • Quantum-type infrared detection elements are easily affected by thermal noise and require cooling, making it difficult to reduce costs and miniaturize them.
  • the graphene light-receiving element and the light-receiving element array of the embodiment operate at room temperature, are easy to integrate, and realize a small-sized imaging device at low cost.

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
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CN115101608A (zh) * 2022-06-16 2022-09-23 中国科学院半导体研究所 石墨烯红外探测器
JP2024018113A (ja) * 2022-07-29 2024-02-08 富士通株式会社 光センサ、及び光センサアレイ
JP2024032579A (ja) * 2022-08-29 2024-03-12 富士通株式会社 グラフェン光センサの製造方法
CN120264870A (zh) * 2025-06-06 2025-07-04 中山大学 一种石墨烯柔性太赫兹波探测器及其制备方法

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