JPWO2021065884A1 - - Google Patents
Info
- Publication number
- JPWO2021065884A1 JPWO2021065884A1 JP2021551299A JP2021551299A JPWO2021065884A1 JP WO2021065884 A1 JPWO2021065884 A1 JP WO2021065884A1 JP 2021551299 A JP2021551299 A JP 2021551299A JP 2021551299 A JP2021551299 A JP 2021551299A JP WO2021065884 A1 JPWO2021065884 A1 JP WO2021065884A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019178844 | 2019-09-30 | ||
| PCT/JP2020/036834 WO2021065884A1 (ja) | 2019-09-30 | 2020-09-29 | グラフェン受光素子、及びその作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021065884A1 true JPWO2021065884A1 (https=) | 2021-04-08 |
Family
ID=75338341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021551299A Pending JPWO2021065884A1 (https=) | 2019-09-30 | 2020-09-29 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20220399466A1 (https=) |
| JP (1) | JPWO2021065884A1 (https=) |
| WO (1) | WO2021065884A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115101608B (zh) * | 2022-06-16 | 2024-10-18 | 中国科学院半导体研究所 | 石墨烯红外探测器 |
| JP2024018113A (ja) * | 2022-07-29 | 2024-02-08 | 富士通株式会社 | 光センサ、及び光センサアレイ |
| JP2024032579A (ja) * | 2022-08-29 | 2024-03-12 | 富士通株式会社 | グラフェン光センサの製造方法 |
| CN119836113B (zh) * | 2025-01-02 | 2025-12-05 | 浙江大学 | 一种自驱动透明紫外柔性光电探测器及图像传感阵列 |
| CN120264870A (zh) * | 2025-06-06 | 2025-07-04 | 中山大学 | 一种石墨烯柔性太赫兹波探测器及其制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013502735A (ja) * | 2009-08-24 | 2013-01-24 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 単一またはいくつかの層のグラフェン・ベースの光検出デバイスおよびその形成方法 |
| CN104766902A (zh) * | 2014-06-16 | 2015-07-08 | 南京大学 | 基于石墨烯碳纳米管复合吸收层的红外光探测晶体管 |
| WO2016121408A1 (ja) * | 2015-01-28 | 2016-08-04 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
| CN106159003A (zh) * | 2015-04-09 | 2016-11-23 | 中国科学院物理研究所 | 一种光伏装置和一种产生光伏效应的方法 |
| CN106653892A (zh) * | 2015-11-03 | 2017-05-10 | 中国科学院物理研究所 | 一种光伏装置以及一种产生光伏效应的方法 |
| WO2018173347A1 (ja) * | 2017-03-22 | 2018-09-27 | 三菱電機株式会社 | 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8507890B1 (en) * | 2012-01-26 | 2013-08-13 | Fundacio Institut De Ciencies Fotoniques | Photoconversion device with enhanced photon absorption |
| CN110392933B (zh) * | 2017-03-10 | 2022-12-06 | 三菱电机株式会社 | 电磁波检测器、电磁波检测器阵列以及电磁波检测方法 |
| EP3635752B1 (en) * | 2017-06-01 | 2023-12-27 | The Regents of The University of California | Metallo-graphene nanocomposites and methods for using metallo-graphene nanocomposites for electromagnetic energy conversion |
| TWI669556B (zh) * | 2018-06-29 | 2019-08-21 | 友達光電股份有限公司 | 顯示面板 |
-
2020
- 2020-09-29 JP JP2021551299A patent/JPWO2021065884A1/ja active Pending
- 2020-09-29 WO PCT/JP2020/036834 patent/WO2021065884A1/ja not_active Ceased
- 2020-09-29 US US17/754,268 patent/US20220399466A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013502735A (ja) * | 2009-08-24 | 2013-01-24 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 単一またはいくつかの層のグラフェン・ベースの光検出デバイスおよびその形成方法 |
| CN104766902A (zh) * | 2014-06-16 | 2015-07-08 | 南京大学 | 基于石墨烯碳纳米管复合吸收层的红外光探测晶体管 |
| WO2016121408A1 (ja) * | 2015-01-28 | 2016-08-04 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
| CN106159003A (zh) * | 2015-04-09 | 2016-11-23 | 中国科学院物理研究所 | 一种光伏装置和一种产生光伏效应的方法 |
| CN106653892A (zh) * | 2015-11-03 | 2017-05-10 | 中国科学院物理研究所 | 一种光伏装置以及一种产生光伏效应的方法 |
| WO2018173347A1 (ja) * | 2017-03-22 | 2018-09-27 | 三菱電機株式会社 | 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法 |
Non-Patent Citations (3)
| Title |
|---|
| CHUANTONG CHENG ET AL.: ""Frequency conversion with nonlinear graphene photodetectors"", NANOSCALE, vol. 9, JPN6025015685, 2017, pages 4082 - 4089, ISSN: 0005576911 * |
| CHUANTONG CHENG ET AL.: ""Performance Enhancement of Graphene Photodetectors via In Situ Preparation of TiO2 on Graphene Chan", ADVANCED MATERIALS TECHNOLOGIES, vol. Vol.4, Article Number 1800548, JPN6024053540, 4 December 2018 (2018-12-04), pages 1 - 8, ISSN: 0005576910 * |
| YUN GAO ET AL.: ""A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz", NANOSCALE, vol. 10, JPN6024053541, 2018, pages 21851 - 21856, ISSN: 0005576913 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220399466A1 (en) | 2022-12-15 |
| WO2021065884A1 (ja) | 2021-04-08 |
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