WO2016121408A1 - 電磁波検出器および電磁波検出器アレイ - Google Patents
電磁波検出器および電磁波検出器アレイ Download PDFInfo
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- 229910021389 graphene Inorganic materials 0.000 claims abstract description 145
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 144
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 230000000737 periodic effect Effects 0.000 claims description 21
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 155
- 239000010408 film Substances 0.000 description 30
- 238000001514 detection method Methods 0.000 description 20
- 230000035945 sensitivity Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052723 transition metal Inorganic materials 0.000 description 8
- 150000003624 transition metals Chemical class 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052792 caesium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- 229910018068 Li 2 O Inorganic materials 0.000 description 2
- -1 LiF Chemical compound 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000002074 nanoribbon Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
Definitions
- the present invention relates to an electromagnetic wave detector and an electromagnetic wave detector array using graphene as a detection layer, and more particularly to a highly sensitive electromagnetic wave detector and an electromagnetic wave detector array in which a buffer layer is provided between the detection layer and an electrode.
- a semiconductor material is generally used as the electromagnetic wave detection layer.
- the semiconductor material has a predetermined band gap, there is a problem that only an electromagnetic wave having energy larger than the band gap can be detected. Accordingly, graphene having a band gap of zero or extremely small is attracting attention as a material for the next generation detection layer.
- Cited Document 1 a gate oxide film is provided on a substrate, and a graphene channel layer is deposited on the gate oxide film. An electromagnetic wave detector in which a source and a drain are formed at both ends has been proposed.
- the detection layer is graphene alone, the absorption rate of electromagnetic waves is as low as several percent, and there is a problem that the detection sensitivity is lowered even if the detectable wavelength range is widened.
- an object of the present invention is to provide an electromagnetic wave detector using graphene as a material for the detection layer, which has a wide detection wavelength range and high detection sensitivity.
- the present invention relates to a substrate, an insulating layer provided on the substrate, a graphene layer provided on the insulating layer, a pair of electrodes provided on the insulating layer with the graphene layer interposed therebetween, and graphene
- An electromagnetic wave detector comprising: a buffer layer sandwiched between a layer and an electrode to separate them.
- the buffer layer exists between the detection layer made of graphene and the electrode, the movement of electric charge between the graphene and the electrode is hindered, and the graphene-electrode different from the Dirac point (DPg) of the graphene body Dirac points (DPe) are formed between them.
- DPg Dirac point
- DPe Dirac points
- FIG. 7 is a cross-sectional view in the VV direction of the electromagnetic wave detector of FIG. 6. It is sectional drawing of the electromagnetic wave detector concerning Embodiment 3 of this invention. It is sectional drawing of the electromagnetic wave detector concerning Embodiment 4 of this invention. It is sectional drawing of the electromagnetic wave detector concerning Embodiment 5 of this invention.
- the electromagnetic wave detector will be described using visible light or infrared light.
- the present invention includes, for example, ultraviolet light, near infrared light, terahertz (THz) wave, micro wave, and the like. It is also effective as a detector for radio wave areas such as waves. In the embodiment of the present invention, these lights and radio waves are collectively referred to as electromagnetic waves.
- an electromagnetic wave detector will be described using a structure having two electrodes, a source and a drain, and a back gate electrode.
- the present invention is not limited to a four-terminal electrode structure or a top gate structure.
- the present invention can also be applied to an electromagnetic wave detector having an electrode structure.
- FIG. 1 is a top view of the electromagnetic wave detector according to the first exemplary embodiment of the present invention, the whole being represented by 100, and FIG. 2 is a cross-sectional view taken along line II in FIG.
- the electromagnetic wave detector 100 includes a substrate 4 made of Si, for example.
- the substrate 4 holds the entire electromagnetic wave detector 100, and is made of, for example, a semiconductor substrate, and a high resistance silicon substrate, a substrate with enhanced thermal insulation properties, etc. are used.
- a doped silicon substrate may be used to form a back gate as will be described later.
- the thermal oxide film may also serve as the insulating layer 3.
- An insulating layer 3 made of, for example, silicon oxide (SiO 2 ), silicon nitride (SiN), aluminum oxide, nickel oxide, boron nitride (BN) or the like is provided on the substrate 4. Since boron nitride has an atomic arrangement similar to that of graphene, it does not interfere with charge transfer by contact with graphene, does not adversely affect it, and does not hinder the performance of graphene such as electron mobility. Therefore, boron nitride is preferable as a base film for graphene.
- a pair of electrodes 2 are provided on the insulating layer 3.
- the electrode 2 is made of a metal such as Au, Ag, Cu, Al, Ni, Cr, or Pd.
- An adhesion film (not shown) made of Cr or Ti may be formed between the electrode 2 and the underlying insulating layer 3.
- the shape of the electrode 2 is not particularly limited as long as it has a size and thickness that can output an electric signal.
- a buffer layer 5 is provided on the electrode 2.
- the buffer layer 5 is made of an insulator such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), or silicon nitride (SiN), such as LiF, Li 2 O 3 , Li 2 CO 3 , Ca, Ba, Active metals such as Cs, Cs 2 CO 3 , TiO 2 , alkali metals, alkaline earth metals, transition metal oxides such as V 2 O 5 , WO 3 , MoO 3 , organic substances, and these metals and organic substances
- the mixed film may be used.
- any material may be used as long as the buffer layer 5 prevents the movement of electric charges between the graphene and the electrode and forms the Dirac point DPe between the graphene and the electrode in addition to the Dirac point of the graphene body.
- the expression “layer” is used for the buffer layer 5, when viewed at the atomic layer level, there may be a sparse or dense region. Specifically, nanoparticles may be used.
- the graphene layer 1 is provided on the insulating layer 3.
- a buffer layer 5 is sandwiched between the graphene layer 1 and the electrode 2.
- the graphene layer 1 is composed of a single layer or two or more layers of graphene. Increasing the number of graphene layers increases the light absorptance and increases the sensitivity of the electromagnetic wave detector 100.
- Graphene is a monoatomic layer of a two-dimensional carbon crystal, and the thickness of the monolayer graphene is as thin as 0.34 nm per one carbon atom. Graphene has carbon atoms in each chain arranged in a hexagonal shape.
- the arbitrary two layers of graphene included in the laminated structure may not have the same hexagonal lattice vector orientation, that is, the orientation may be shifted. Further, a laminated structure in which lattice vectors are completely matched may be used. In particular, when two or more layers of graphene are stacked, a band gap is formed, so that a wavelength selection effect can be provided.
- a graphene nanoribbon alone or a structure in which a plurality of graphene nanoribbons are arranged may be used.
- the graphene layer 1 may be non-doped, but may be doped p-type or n-type. By doping the graphene layer 1 to be n-type or p-type, the position of the Dirac point (DPg) in the graphene can be controlled as will be described later.
- the buffer layer 5 is provided between the graphene layer 1 and the electrode 2, so that the charge mobility of the graphene layer 1 depends on the presence or absence of electromagnetic wave irradiation. Threshold electric fields that change the values are respectively formed. For this reason, when the graphene layer 1 is irradiated with light, the Dirac point (DPg) of the graphene layer 1 is shifted. As a result, a large current change occurs, and the electric resistance value of the graphene layer 1 changes. By detecting this change in the electrical resistance value with the electrode 2 disposed outside the graphene layer 1, the intensity of the incident electromagnetic wave having an arbitrary wavelength can be detected as an electrical signal with high sensitivity.
- an output amplification circuit using graphene may be provided in an adjacent portion or a lower layer portion of the electromagnetic wave detector 100. Accordingly, the operation is faster than that of an output amplifier circuit formed from a silicon-based semiconductor material, and a high-performance electromagnetic wave detector can be realized.
- 3a to 3f are cross-sectional views of other electromagnetic wave detectors according to the first exemplary embodiment of the present invention.
- 3A to 3F the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding portions.
- the graphene layer 1 is formed on the insulating layer 3, and the buffer layer 5 and the electrode 2 are sequentially formed thereon.
- a method such as vapor deposition that does not damage the graphene layer 1.
- one electrode (left electrode in FIG. 3b) is provided with the graphene layer 1 on the electrode 2 via the buffer layer 5, and the other electrode (right electrode in FIG. 3b). Electrode), the electrode 2 is provided on the graphene layer 1 with the buffer layer 5 interposed therebetween.
- the graphene layer 12 has an electrode 2 formed thereon via a buffer layer 5, while the graphene layer 1 has an electrode 2 is formed via a buffer layer 5.
- a protective film 13 is formed so as to cover the graphene layer 1, the buffer layer 5, and the electrode 2.
- the buffer layer 5 is made of a thin film such as a natural oxide film
- the protective film 13 can be provided to prevent changes in the properties of the buffer layer 5 due to the influence of the surrounding atmosphere.
- the protective film 13 is made of an insulating film such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), or silicon nitride (SiN).
- an electrode 14 is provided on the protective film 13.
- This electrode 14 operates as a top gate electrode.
- a back gate type (see FIG. 5) may be used in which an electric signal applied to the electrode 2 is detected by applying a voltage from the back side of the substrate 4 (lower side in FIG. 3E).
- the upper surface of the electrode 2 and the upper surface of the insulating layer 3 are in the same plane.
- a buffer layer 5 is interposed between the graphene layer 1 and the electrode 2.
- a buffer layer 5 such as an oxide film exists between the graphene layer 1 and the electrode 2.
- the potential at the contact point between the graphene layer 1 and the electrode 2 is the same regardless of what bias voltage is applied to the graphene layer 1, but the actual measurement results are shown in FIG.
- the buffer layer 5 is present, charge transfer between the graphene and the electrode is hindered, and therefore, the buffer layer 5 between the graphene and the electrode, which is different from the Dirac point DP (hereinafter referred to as “DPg1”) of the graphene body. A level formed by the influence of is formed.
- DPe Dirac point DP
- DPe can be defined as a point that becomes a threshold electric field that changes the charge mobility of graphene depending on the presence or absence of light irradiation. That is, it can be considered that DPe is formed by the buffer layer 5 preventing the movement of electric charges between the graphene layer 1 and the electrode 2.
- the film thickness of the buffer layer 5 is such that the charge can be transferred between the graphene layer 1 and the electrode 2 through the buffer layer 5 when the graphene layer 1 is irradiated with electromagnetic waves. Good. If the buffer layer 5 is too thick, charge transfer between the graphene layer 1 and the electrode 2 becomes impossible. Therefore, the thickness of the buffer layer 5 is usually very thin, about several atomic layers to 10 nm. preferable. However, depending on the material of the buffer layer 5, the charge may be transferred even when the thickness is larger than this thickness.
- a protective film or the like may be formed on the graphene layer 1, the electrode 2, and the buffer layer 5 therebetween as long as the irradiated electromagnetic wave can reach when irradiated with the electromagnetic wave.
- FIG. 4 shows measurement results of the electrical characteristics of the graphene layer 1 when the electromagnetic wave detector 100 according to the first embodiment is irradiated with light and when it is not irradiated.
- the horizontal axis represents the back gate voltage
- the vertical axis represents the current flowing between the two electrodes 2.
- the graphene layer 1 is composed of a single layer of graphene, and the distance between the two electrodes 2 is 5 ⁇ m, and the length of the electrode 2 (vertical direction in FIG. 1) is 15 ⁇ m.
- the electrode 2 has a multilayer structure of metal, the outermost surface is gold, and the thickness is 30 nm.
- a Ti film having a thickness of 5 nm is formed between the insulating layer 3 and the insulating layer 3 in order to improve adhesion.
- the substrate 4 is made of silicon doped N-type.
- the substrate 4 operates as a back gate type in which a voltage is applied from the back surface.
- the insulating layer 3 is made of a silicon thermal oxide film (SiO 2 ) and has a thickness of 290 nm.
- the buffer layer 5 was a gold oxide film formed by oxidizing gold on the surface of the electrode 2 by UV ozone treatment. The thickness is several nm or less. Or inclusions, such as OH group, may be sufficient.
- the above dimensions are the dimensions of the sample used in the measurement of FIG. 4, and the electromagnetic wave detector 100 is not limited to these dimensions, and is appropriately designed according to the sensitivity of the electromagnetic wave detector 100 and the like.
- one of the two electrodes 2 is a source, the other is a drain, and a voltage is applied from the back surface of the substrate 4 to operate as a back gate (see FIG. 5).
- FIG. 4 clearly shows DPg1 and DPe without light irradiation, and DPg2 moved by light irradiation.
- the difference in Vbg between DPg1 and DPg2 is as large as about 20V.
- the back gate voltage Vbg is about 25V
- the current becomes 100 ⁇ A due to the fluctuation of the Dirac point due to light irradiation.
- the sensitivity obtained in the above experiment is calculated, a very large sensitivity of several hundred A / W is realized.
- the amount of current change is very small, so that a highly sensitive photoresponse can be obtained.
- the elimination of this asymmetry due to electric field movement at the time of light irradiation in the metal part of the electrode 2 can result in a large extraction current at the time of light irradiation.
- the silicon substrate is doped.
- Dpe is formed in a region where Vbg is positive, the difference between DPg1 and DPg2 tends to increase due to the N-type silicon substrate.
- Dpe is formed in a region where Vbg is negative, the difference between DPg1 and DPg2 tends to increase due to the P-type silicon substrate.
- these effects occur in combination with effects such as a buffer layer.
- a photocurrent generated by the incidence of electromagnetic waves on the graphene layer 1 may be detected.
- the electromagnetic wave detector 100 operates with or without applying an external bias between the electrodes 2 at both ends of the photocurrent generation path of the graphene layer 1.
- the detection efficiency of the generated carriers is increased by applying a bias.
- the graphene layer 1 is connected to an electric circuit for taking out a change in photocurrent such as an external bias through an electrode 2. For example, when a voltage Vd is applied between the two electrodes 2 as a method for reading an electrical signal, the amount of current Id flowing between the electrodes 2 changes due to an electrical signal of a resistance value change in the graphene layer 1. By detecting the change in the amount of current, the magnitude of the incident electromagnetic wave can be detected. A circuit that allows a constant current to flow between the two electrodes 2 may be added to detect the amount of change in the voltage value.
- an electrical signal may be taken out as a transistor structure by combining the back surface of the substrate 4 with the back gate terminal and the two-terminal electrode 2.
- an even larger electric field can be generated in the graphene layer 1, and carriers generated by incidence of electromagnetic waves can be detected with high efficiency.
- only one electrode 2 may be formed, and the potential change of the graphene layer 1 due to the incidence of electromagnetic waves may be detected using this.
- an electrical signal may be taken out as a top gate structure in which a transistor structure is formed by forming an oxide film on the graphene layer 1 and combining it with the two-terminal electrode 2 as a gate terminal on the oxide film (FIG. 3e). reference).
- the manufacturing method of the electromagnetic wave detector 100 includes the following steps 1 to 5.
- Step 1 First, a flat substrate 4 such as silicon is prepared.
- Step 2 The insulating layer 3 is formed on the substrate 4.
- the insulating layer 3 may be formed of silicon oxide (SiO 2 ) by thermal oxidation. Further, another insulating film may be formed by CVD or sputtering.
- Step 3 An electrode 2 made of Au, Ag, Cu, Al, Ni, Cr or the like is formed. At this time, an adhesion film of Cr or Ti may be formed in order to improve adhesion with the lower insulating layer 3.
- the electrode 2 is formed by forming a resist mask using photoengraving or EB drawing, and then depositing a metal layer made of Au, Ag, Cu, Al, Ni, Cr, etc. on the resist mask by vapor deposition or sputtering. Do.
- Step 4 The buffer layer 5 is formed by oxidizing the surface of the electrode 2 made of metal.
- the electrode 2 is oxidized by UV irradiation (UV ozone treatment), plasma irradiation, natural oxidation, or the like in an ozone atmosphere.
- An oxide film may be formed using a solution or the like.
- an insulating film such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), or silicon nitride (SiN) may be formed over the electrode 2 in a region in contact with the graphene layer 1.
- active metals alkali metals, alkaline earth metals such as LiF, Li 2 O 3 , Li 2 CO 3 , Ca, Ba, Cs, Cs 2 CO 3 , TiO 2 , transition metal oxides such as V 2 O 5 , WO 3 , MoO 3 , an organic material or a mixed film of these materials and these metals may be used.
- the film may be formed of any material as long as it is a material that forms DPe other than the Dirac point of the graphene body by the buffer layer 5.
- Graphene is formed on the electrode 2 and the insulating layer 3.
- Graphene may be formed by epitaxial growth, or the formed graphene layer may be transferred and pasted in advance using a CVD method. Alternatively, graphene peeled by mechanical peeling or the like may be transferred. Subsequently, graphene is covered with a resist mask by photolithography or the like, and is patterned by etching with oxygen plasma. As a result, the graphene layer 1 is formed by removing unnecessary portions of graphene other than the channel portion and the region in contact with the electrode 2.
- the electromagnetic wave detector 100 according to the first exemplary embodiment of the present invention is completed through the above steps 1 to 5.
- FIG. FIG. 6 is a top view of the electromagnetic wave detector according to the second exemplary embodiment of the present invention, indicated as a whole by 110, and FIG. 7 is a cross-sectional view taken along line VV of FIG. 6 and 7, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding portions.
- the electromagnetic wave detector 110 according to the second exemplary embodiment is different from the electromagnetic wave detector 100 according to the first exemplary embodiment in that the area of the graphene layer 1 that overlaps the electrode 2 via the buffer layer 5 (the broken line in FIG. 6). Is different between the two electrodes 2, that is, between the source electrode and the drain electrode.
- Such a structure may be processed in the graphene processing step (step 5) in Embodiment 1 so that the areas of the graphene on the source and the drain are different.
- the amount of charge transfer from the metal constituting the electrode 2 to the graphene layer 1 also differs accordingly. That is, the energy gap is different between the source electrode and the drain electrode.
- the Dirac point DPe between the graphene and the electrode which is different from the Dirac point DP of the graphene main body, is formed, and the same phenomenon as in Embodiment 1 occurs at the time of light irradiation, and the change in photocurrent increases.
- the photocurrent at the time of light irradiation can be increased, and the sensitivity of the electromagnetic wave detector 110 can be improved.
- FIG. 8 is a cross-sectional view of the electromagnetic wave detector according to the third exemplary embodiment of the present invention, which is indicated as a whole by 120. 8, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding portions.
- the electromagnetic wave detector 120 according to the third exemplary embodiment is different from the electromagnetic wave detector 100 according to the first exemplary embodiment in that the electrode 6 (for example, source electrode) and the electrode 7 (for example, drain electrode) are made of different metals. Is a point. Graphene has a different Fermi level or different contact resistance depending on the type of metal in contact. Therefore, when the electrodes 6 and 7 are formed from different metals, the energy gap differs between the source and the drain. For this reason, when light is irradiated, a bias is generated between the electrodes 5 and 6 due to the generated carriers, the photocurrent is increased, and the sensitivity of the electromagnetic wave detector 120 can be improved.
- the electrode 6 for example, source electrode
- the electrode 7 for example, drain electrode
- FIG. 9 is a cross-sectional view of the electromagnetic wave detector according to the fourth exemplary embodiment of the present invention, the whole of which is represented by 130. 9, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding portions.
- the electromagnetic wave detector 130 according to the fourth exemplary embodiment is different from the electromagnetic wave detector 100 according to the first exemplary embodiment in that the buffer layers 8 and 9 formed on the two electrodes 2 are made of different oxides. It is. As a result, the contact resistance between the electrode and graphene is different between the two electrodes 2, that is, the source electrode and the drain electrode, and the energy gap is different between the source and the drain. For this reason, when light is irradiated, a bias is generated between the two electrodes 2 by the generated carriers, the photocurrent is increased, and the sensitivity of the electromagnetic wave detector 130 can be improved.
- FIG. 10 is a cross-sectional view of the electromagnetic wave detector according to the fifth exemplary embodiment of the present invention, indicated as a whole by 140. 10, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding portions.
- the electromagnetic wave detector 140 according to the fifth embodiment is different from the electromagnetic wave detector 100 according to the first embodiment in that a periodic recess 10 is formed on the surface of the electrode 2.
- 11 and 12 are top views of the electrode 2.
- the recessed part 10 consists of a cylindrical recessed part arrange
- the arrangement may be any periodic arrangement such as a square lattice or a triangular lattice.
- a concave portion having another shape such as a rectangular column, a triangular column, a quadrangular column, or an elliptical column may be used.
- the recess 11 may be a one-dimensional groove arranged in parallel as shown in FIG. 12, for example. These recesses 10 and 11 generate plasmon resonance regardless of whether or not they penetrate the electrode 2.
- a pattern design for detecting the target wavelength may be appropriately made.
- the material of the electrode 2 may be any metal as long as surface plasmon resonance occurs. For example, Au, Ag, Al, or the like is used.
- periodic concave portions 10 and 11 are formed on the surface of the electrode 2
- periodic convex portions may be formed. Plasmon resonance with the same effect occurs.
- the resonance wavelength of plasmon resonance is determined depending on the periodic structure.
- the electromagnetic wave detector 100 can strongly detect only an electromagnetic wave having a specific resonance wavelength, and the detection sensitivity of the specific wavelength can be increased.
- FIG. 13 and 14 are top views showing only the graphene layer 1 used in the electromagnetic wave detector according to the sixth embodiment.
- the difference from the electromagnetic wave detector 100 according to the first exemplary embodiment is that a one-dimensional or two-dimensional periodic recesses 20 and 21 are formed in the graphene layer 1.
- the recesses 20 and 21 may be holes penetrating the graphene layer 1.
- the recesses 20 and 21 are holes that penetrate the graphene layer 1.
- the recesses 20 and 21 do not penetrate the graphene layer 1 as long as the holes penetrate only one of the layers. Further, if the hole penetrates all of the plurality of layers, the recesses 20 and 21 penetrate the graphene layer 1.
- the two-dimensional periodic arrangement may be any periodic arrangement such as a square lattice or a triangular lattice.
- the shape of the recess 20 may be a recess having any shape such as a cylinder, a prism, a triangular prism, a quadrangular prism, or an elliptical cylinder.
- the shape viewed from above, such as a triangular prism is asymmetrical, the light absorbed by the graphene layer 1 has polarization dependency, so that an electromagnetic wave detector that detects only specific polarized light can be formed. .
- the one-dimensional periodic arrangement may be a one-dimensional groove arranged in parallel as shown in FIG. 14, for example.
- the electromagnetic wave detector 100 can strongly detect only an electromagnetic wave having a specific resonance wavelength, and the detection sensitivity of the specific wavelength can be increased.
- Embodiment 7 FIG.
- the electromagnetic wave detector (not shown) according to the seventh embodiment includes a two-dimensional electromagnetic wave detector 100 according to the first embodiment and a transition metal dichalcogenide or black phosphor (Black Phosphorus) instead of the graphene layer 1. It differs in that it uses materials. Other structures are the same as those of the electromagnetic wave detector 100. Two-dimensional materials such as transition metal dichalcogenides and black phosphorus are called two-dimensional materials because they have the same atomic layer structure as graphene. For example, transition metal dichalcogenides such as MoS 2 , WS 2 , WSe 2, etc. Become. Moreover, the structure which laminated
- a transition metal dichalcogenide or black phosphor Black Phosphorus
- transition metal dichalcogenide materials and black phosphorus have a predetermined band gap. For this reason, since the off current becomes almost zero, the noise of the electromagnetic wave detector is reduced, and the performance of the electromagnetic wave detector can be improved.
- the band gap can be adjusted by the number of layers in which two-dimensional materials such as transition metal dichalcogenide and black phosphorus are laminated, the wavelength of the electromagnetic wave to be detected can be selected according to the number of layers.
- the wavelength selective electromagnetic wave detector which detects only the electromagnetic waves of a specific wavelength can be obtained.
- it is not necessary to use an optical filter that is a typical wavelength selection method the number of optical components can be reduced, and the loss of incident light due to passing through the filter can also be reduced.
- two-dimensional materials such as transition metal dichalcogenides and black phosphorus are combined in two or more different materials, or two-dimensional materials such as transition metal dichalcogenide and black phosphorus are combined with graphene to form a heterojunction.
- FIG. 15 is a top view of the electromagnetic wave detector array according to the eighth exemplary embodiment of the present invention, the whole of which is represented by 1000.
- the electromagnetic wave detectors 100 according to the first exemplary embodiment are arranged in 2 ⁇ 2, but the number of arranged detectors is not limited to this.
- the electromagnetic wave detector array 1000 not only the electromagnetic wave detector 100 but also the electromagnetic wave detectors according to other embodiments 2 to 7 may be arranged in an array.
- an electromagnetic wave detector array using graphene can detect electromagnetic waves in a very wide wavelength range from ultraviolet light to microwaves. For this reason, when an electromagnetic wave detector array is applied to a vehicle-mounted sensor, for example, it can be used as a visible light image camera during the day, while it can also be used as an infrared camera at night, eliminating the need for different cameras depending on the detection wavelength.
- FIG. 16 is a top view of the electromagnetic wave detector array according to the ninth exemplary embodiment of the present invention, the whole of which is represented by 2000.
- different types of electromagnetic wave detectors 100, 200, 300, and 400 are arranged in 2 ⁇ 2, but the number to be arranged is not limited to this.
- the electromagnetic wave detector array 2000 has a function as an image sensor by arranging different types of electromagnetic wave detectors described in the first to eighth exemplary embodiments in a one-dimensional or two-dimensional array. You can have it.
- the electromagnetic wave detectors 100, 200, 300, and 400 are formed from electromagnetic wave detectors having different detection wavelengths.
- the electromagnetic wave detectors having detection wavelength selectivity described in the fifth to seventh embodiments are arranged in an array.
- the electromagnetic wave detector array 2000 can detect electromagnetic waves having different wavelengths by at least two or more.
- the electromagnetic wave detectors having different detection wavelengths By arranging the electromagnetic wave detectors having different detection wavelengths in an array like this, it is colored in the wavelength range of ultraviolet light, infrared light, terahertz wave, and radio wave as well as the image sensor used in the visible light range. An image can be obtained.
- the structure of the electromagnetic wave detector array 2000 makes it possible to manufacture an image sensor that detects the light intensity of electromagnetic waves having a plurality of wavelengths. As a result, it is possible to detect a plurality of wavelengths of electromagnetic waves and obtain a color image without using a color filter conventionally required for a CMOS sensor or the like.
- a polarization discrimination image sensor can be formed by arraying electromagnetic wave detectors having different polarizations to be detected. For example, an artifact and a natural object can be discriminated.
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Abstract
Description
そこで、次世代の検出層の材料としてバンドギャップがゼロまたは極めて小さいグラフェンが注目され、例えば引用文献1では、基板上にゲート酸化膜を設け、その上にグラフェンのチャネル層を堆積し、チャネル層の両端にソースおよびドレインを形成した電磁波検出器が提案されている。
図1は、全体が100で表される、本発明の実施の形態1にかかる電磁波検出器の上面図であり、図2は、図1のI-Iにおける断面図である。
なお、バッファ層5は「層」という表現を用いているが、原子層レベルで見た場合、疎密があるかまたは不連続な領域があっても良い。具体的にはナノ粒子を用いても良い。
図6は、全体が110で表される、本発明の実施の形態2にかかる電磁波検出器の上面図であり、図7は、図6のV-Vにおける断面図である。図6、7中、図1、2と同一符合は、同一または相当箇所を示す。
図8は、全体が120で表される、本発明の実施の形態3にかかる電磁波検出器の断面図である。図8中、図1、2と同一符合は、同一または相当箇所を示す。
図9は、全体が130で表される、本発明の実施の形態4にかかる電磁波検出器の断面図である。図9中、図1、2と同一符合は、同一または相当箇所を示す。
図10は、全体が140で表される、本発明の実施の形態5にかかる電磁波検出器の断面図である。図10中、図1、2と同一符合は、同一または相当箇所を示す。
図13、14は、本実施の形態6にかかる電磁波検出器に用いられるグラフェン層1のみを示した上面図である。実施の形態1にかかる電磁波検出器100と異なる点は、グラフェン層1に、一次元または二次元の周期的な凹部20、21が形成されている点である。凹部20、21は、グラフェン層1を貫通する孔でも良い。グラフェン層1が単層の場合は、凹部20、21は、グラフェン層1を貫通する孔となる。グラフェン層1が複数層の場合は、そのうちのいずれかの層のみを貫通する孔であれば、凹部20、21はグラフェン層1を貫通しない。また、複数層全てを貫通する孔であれば、凹部20、21はグラフェン層1を貫通する。
本実施の形態7にかかる電磁波検出器(図示せず)は、実施の形態1にかかる電磁波検出器100と、グラフェン層1の代わりに遷移金属ダイカルコゲナイドか黒リン(Black Phosphorus)などの2次元材料を用いた点で異なる。他の構造は電磁波検出器100と同様である。遷移金属ダイカルコゲナイドや黒リンなどの2次元材料は、グラフェンと同様の原子層状構造を有するため、2次元材料と呼ばれ、例えばMoS2、WS2、WSe2等遷移金属ダイカルコゲナイドや黒リンからなる。また、これらの材料のうち同種の材料、あるいは異なる材料同士を積層した構造でも良い。あるいはプロベスカイトとグラフェンまたは2次元材料の異種材料接合でもよい。
図15は、全体が1000で表される、本発明の実施の形態8にかかる電磁波検出器アレイの上面図である。図15では、実施の形態1にかかる電磁波検出器100が2×2に配置されているが、配置する個数はこれに限定されるものではない。
図16は、全体が2000で表される、本発明の実施の形態9にかかる電磁波検出器アレイの上面図である。図16では、互いに種類の異なる電磁波検出器100、200、300、400が2×2に配置されているが、配置する個数はこれに限定されるものではない。
2 電極
3 絶縁層
4 基板
5 バッファ層
6、7 電極
8、9 バッファ層
10、11 凹部
12 グラフェン層
13 保護膜
14 電極
100、110、120、130 電磁波検出器
1000、2000 電磁波検出器アレイ
Claims (13)
- 基板と、
該基板の上に設けられた絶縁層と、
該絶縁層の上に設けられたグラフェン層と、
該絶縁層の上に、該グラフェン層を挟んで設けられた一対の電極と、
該グラフェン層と該電極との間に挟まれてこれらを離隔するバッファ層と、を含むことを特徴とする電磁波検出器。 - 上記グラフェン層と上記電極との間に、該グラフェン層中のディラックポイントとは異なるディラックポイント(DPe)が形成されることを特徴とする請求項1に記載の電磁波検出器。
- 上記電極は金属からなり、上記バッファ層は該金属の酸化物からなることを特徴とする請求項1または2に記載の電磁波検出器。
- 上記グラフェン層および上記バッファ層を覆うように保護膜が設けられたことを特徴とする請求項1~3のいずれかに記載の電磁波検出器。
- 上記一対の電極において、上記バッファ層を挟んで電極と上記グラフェン層とが対向する部分の面積が、該電極間で異なることを特徴とする請求項1~4のいずれかに記載の電磁波検出器。
- 上記一対の電極の材料が、該電極間で異なることを特徴とする請求項1~5のいずれかに記載の電磁波検出器。
- 上記一対の電極と上記グラフェン層との間にそれぞれ設けられた上記バッファ層の材料が、該バッファ層間で異なることを特徴とする請求項1~6のいずれかに記載の電磁波検出器。
- 上記電極の表面に、表面プラズモン共鳴を生じる周期的な凹部または凸部が形成されたことを特徴とする請求項1~7のいずれかに記載の電磁波検出器。
- 上記グラフェンの表面に、表面プラズモン共鳴を生じる周期的な凹部または凸部が形成されたことを特徴とする請求項1~8のいずれかに記載の電磁波検出器。
- 上記周期的な凹部は、1次元または2次元に配置された周期的な孔、または並列配置された1次元の溝からなることを特徴とする請求項8または9に記載の電磁波検出器。
- 上記グラフェン層は、2層以上のグラフェンの積層構造、または2次元材料、または2次元材料の積層構造、グラフェンと2次元材料との積層構造を有することを特徴とする請求項1~10のいずれかに記載の電磁波検出器。
- 請求項1~11のいずれかに記載の電磁波検出器をアレイ状に配置したことを特徴とする電磁波検出器アレイ。
- 請求項8~11のいずれかに記載の電磁波検出器であって、互いに異なる電磁波検出器をアレイ状に配置したことを特徴とする電磁波検出器アレイ。
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Also Published As
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US10068934B2 (en) | 2018-09-04 |
DE112016000504T5 (de) | 2017-11-16 |
JP6073530B2 (ja) | 2017-02-01 |
US20180006067A1 (en) | 2018-01-04 |
DE112016000504B4 (de) | 2024-01-18 |
CN107210326A (zh) | 2017-09-26 |
CN107210326B (zh) | 2019-02-26 |
JPWO2016121408A1 (ja) | 2017-04-27 |
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