JP6073530B2 - 電磁波検出器および電磁波検出器アレイ - Google Patents
電磁波検出器および電磁波検出器アレイ Download PDFInfo
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- 239000010410 layer Substances 0.000 claims description 175
- 229910021389 graphene Inorganic materials 0.000 claims description 142
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 141
- 239000000463 material Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 230000000737 periodic effect Effects 0.000 claims description 21
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 30
- 238000001514 detection method Methods 0.000 description 20
- 230000035945 sensitivity Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052723 transition metal Inorganic materials 0.000 description 8
- 150000003624 transition metals Chemical class 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052792 caesium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- 229910018068 Li 2 O Inorganic materials 0.000 description 2
- -1 LiF Chemical compound 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000002074 nanoribbon Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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- H01L27/144—Devices controlled by radiation
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Description
そこで、次世代の検出層の材料としてバンドギャップがゼロまたは極めて小さいグラフェンが注目され、例えば引用文献1では、基板上にゲート酸化膜を設け、その上にグラフェンのチャネル層を堆積し、チャネル層の両端にソースおよびドレインを形成した電磁波検出器が提案されている。
図1は、全体が100で表される、本発明の実施の形態1にかかる電磁波検出器の上面図であり、図2は、図1のI−Iにおける断面図である。
なお、バッファ層5は「層」という表現を用いているが、原子層レベルで見た場合、疎密があるかまたは不連続な領域があっても良い。具体的にはナノ粒子を用いても良い。
図6は、全体が110で表される、本発明の実施の形態2にかかる電磁波検出器の上面図であり、図7は、図6のV−Vにおける断面図である。図6、7中、図1、2と同一符合は、同一または相当箇所を示す。
図8は、全体が120で表される、本発明の実施の形態3にかかる電磁波検出器の断面図である。図8中、図1、2と同一符合は、同一または相当箇所を示す。
図9は、全体が130で表される、本発明の実施の形態4にかかる電磁波検出器の断面図である。図9中、図1、2と同一符合は、同一または相当箇所を示す。
図10は、全体が140で表される、本発明の実施の形態5にかかる電磁波検出器の断面図である。図10中、図1、2と同一符合は、同一または相当箇所を示す。
図13、14は、本実施の形態6にかかる電磁波検出器に用いられるグラフェン層1のみを示した上面図である。実施の形態1にかかる電磁波検出器100と異なる点は、グラフェン層1に、一次元または二次元の周期的な凹部20、21が形成されている点である。凹部20、21は、グラフェン層1を貫通する孔でも良い。グラフェン層1が単層の場合は、凹部20、21は、グラフェン層1を貫通する孔となる。グラフェン層1が複数層の場合は、そのうちのいずれかの層のみを貫通する孔であれば、凹部20、21はグラフェン層1を貫通しない。また、複数層全てを貫通する孔であれば、凹部20、21はグラフェン層1を貫通する。
本実施の形態7にかかる電磁波検出器(図示せず)は、実施の形態1にかかる電磁波検出器100と、グラフェン層1の代わりに遷移金属ダイカルコゲナイドか黒リン(Black Phosphorus)などの2次元材料を用いた点で異なる。他の構造は電磁波検出器100と同様である。遷移金属ダイカルコゲナイドや黒リンなどの2次元材料は、グラフェンと同様の原子層状構造を有するため、2次元材料と呼ばれ、例えばMoS2、WS2、WSe2等遷移金属ダイカルコゲナイドや黒リンからなる。また、これらの材料のうち同種の材料、あるいは異なる材料同士を積層した構造でも良い。あるいはプロベスカイトとグラフェンまたは2次元材料の異種材料接合でもよい。
図15は、全体が1000で表される、本発明の実施の形態8にかかる電磁波検出器アレイの上面図である。図15では、実施の形態1にかかる電磁波検出器100が2×2に配置されているが、配置する個数はこれに限定されるものではない。
図16は、全体が2000で表される、本発明の実施の形態9にかかる電磁波検出器アレイの上面図である。図16では、互いに種類の異なる電磁波検出器100、200、300、400が2×2に配置されているが、配置する個数はこれに限定されるものではない。
2 電極
3 絶縁層
4 基板
5 バッファ層
6、7 電極
8、9 バッファ層
10、11 凹部
12 グラフェン層
13 保護膜
14 電極
100、110、120、130 電磁波検出器
1000、2000 電磁波検出器アレイ
Claims (14)
- 導電性を有する基板と、
該基板の上に設けられた絶縁層と、
該絶縁層の上に設けられたグラフェン層と、
該絶縁層の上に、該グラフェン層を挟んで設けられた一対の電極と、
該グラフェン層と該一対の電極との間にそれぞれ挟まれてこれらを離隔するバッファ層と、を含むことを特徴とする電磁波検出器。 - 上記一対の電極は、同一材料からなることを特徴とする請求項1に記載の電磁波検出器。
- 上記一対の電極の材料が、該電極間で異なることを特徴とする請求項1に記載の電磁波検出器。
- 上記グラフェン層と上記電極との間に、該グラフェン層中のディラックポイントとは異なるディラックポイント(DPe)が形成されることを特徴とする請求項1〜3のいずれかに記載の電磁波検出器。
- 上記電極は金属からなり、上記バッファ層は該金属の酸化物からなることを特徴とする請求項1〜4のいずれかに記載の電磁波検出器。
- 上記グラフェン層および上記バッファ層を覆うように保護膜が設けられたことを特徴とする請求項1〜5のいずれかに記載の電磁波検出器。
- 上記一対の電極において、上記バッファ層を挟んで電極と上記グラフェン層とが対向する部分の面積が、該電極間で異なることを特徴とする請求項1〜6のいずれかに記載の電磁波検出器。
- 上記一対の電極と上記グラフェン層との間にそれぞれ設けられた上記バッファ層の材料が、該バッファ層間で異なることを特徴とする請求項1〜7のいずれかに記載の電磁波検出器。
- 上記電極の表面に、表面プラズモン共鳴を生じる周期的な凹部または凸部が形成されたことを特徴とする請求項1〜8のいずれかに記載の電磁波検出器。
- 上記グラフェンの表面に、表面プラズモン共鳴を生じる周期的な凹部または凸部が形成されたことを特徴とする請求項1〜9のいずれかに記載の電磁波検出器。
- 上記周期的な凹部は、1次元または2次元に配置された周期的な孔、または並列配置された1次元の溝からなることを特徴とする請求項9または10に記載の電磁波検出器。
- 上記グラフェン層は、2層以上のグラフェンの積層構造、または2次元材料、または2次元材料の積層構造、グラフェンと2次元材料との積層構造を有することを特徴とする請求項1〜11のいずれかに記載の電磁波検出器。
- 請求項1〜12のいずれかに記載の電磁波検出器をアレイ状に配置したことを特徴とする電磁波検出器アレイ。
- 請求項9〜12のいずれかに記載の電磁波検出器であって、互いに異なる電磁波検出器をアレイ状に配置したことを特徴とする電磁波検出器アレイ。
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Cited By (2)
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KR101940422B1 (ko) * | 2017-10-02 | 2019-01-21 | 재단법인대구경북과학기술원 | 마이크로파 검출소자 및 마이크로파 검출소자의 제조방법 |
KR101990050B1 (ko) * | 2017-12-14 | 2019-09-30 | 재단법인 한국탄소융합기술원 | 전이금속 이유화 물질 광소자의 감도 조절 방법 |
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US20170237918A1 (en) * | 2016-02-12 | 2017-08-17 | The Regents Of The University Of Michigan | Light field imaging with transparent photodetectors |
CN106711260A (zh) * | 2017-02-28 | 2017-05-24 | 刘泉 | 一种石墨烯太阳能板及含有其的路灯 |
WO2018163496A1 (ja) * | 2017-03-10 | 2018-09-13 | 三菱電機株式会社 | 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法 |
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US10068934B2 (en) | 2018-09-04 |
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WO2016121408A1 (ja) | 2016-08-04 |
US20180006067A1 (en) | 2018-01-04 |
CN107210326A (zh) | 2017-09-26 |
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JPWO2016121408A1 (ja) | 2017-04-27 |
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