WO2021052497A1 - Dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur Download PDF

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Publication number
WO2021052497A1
WO2021052497A1 PCT/CN2020/116480 CN2020116480W WO2021052497A1 WO 2021052497 A1 WO2021052497 A1 WO 2021052497A1 CN 2020116480 W CN2020116480 W CN 2020116480W WO 2021052497 A1 WO2021052497 A1 WO 2021052497A1
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WIPO (PCT)
Prior art keywords
substrate
cavity
magnetic
magnet
temperature
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PCT/CN2020/116480
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English (en)
Chinese (zh)
Inventor
林信南
游宗龙
刘美华
李方华
児玉晃
板垣克則
Original Assignee
深圳市晶相技术有限公司
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Publication date
Priority claimed from CN201921573735.8U external-priority patent/CN211199388U/zh
Priority claimed from CN201910895152.5A external-priority patent/CN110643962A/zh
Application filed by 深圳市晶相技术有限公司 filed Critical 深圳市晶相技术有限公司
Publication of WO2021052497A1 publication Critical patent/WO2021052497A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Definitions

  • the present invention relates to the field of semiconductors, and in particular to a semiconductor device.
  • PVD Physical Vapor Deposition
  • electrons are accelerated to the substrate under the action of an electric field, and collide with argon atoms in the process, ionizing a large number of argon ions and electrons, forming a plasma area between the target and the substrate.
  • the argon ions accelerate the bombardment of the target under the action of the electric field, sputtering a large number of target atoms or molecules, and the neutral target atoms or molecules are deposited on the substrate to form a film.
  • the electrons are affected by the Loren magnetic force of the magnetic field, and are confined in the plasma region close to the target material, moving around the target material, increasing the movement path of the electrons, thereby increasing the collision rate between the electrons and argon atoms ,
  • the ionized large amount of argon ions can bombard more target atoms or molecules.
  • the uniformity of the film after the direct sputtering is poor, so that subsequent processing is required in the next process, and the process is cumbersome, which is not suitable for the production of large-size wafers.
  • the present invention proposes a semiconductor device to improve the uniformity of the coating film and simplify the operation process.
  • the present invention provides a semiconductor device, including:
  • a susceptor is arranged in the growth chamber, and the susceptor allows the substrate to be placed;
  • the target is set in the growth cavity
  • the magnet is arranged on the opposite position of the target
  • the magnet includes a plurality of magnetic units, and the magnet forms an arc-shaped magnetic field.
  • the magnet includes a first part, a second part, and a plurality of third parts, and the plurality of third parts are connected between the first part and the second part.
  • two ends of the first part are respectively connected to one end of the third part, and the first part includes a first magnetic unit.
  • two ends of the second part are respectively connected to the other end of the third part, and the second part includes a plurality of second magnetic units, a plurality of third magnetic units, and a fourth Magnetic unit.
  • both ends of the fourth magnetic unit are connected to the plurality of third magnetic units, one end of the second magnetic unit is connected to the third magnetic unit, and the second magnetic unit The other end is connected to the third part.
  • the plurality of third magnetic units and the fourth magnetic unit form a recess.
  • the third part includes a plurality of magnetic units connected to each other.
  • the slopes of the plurality of magnetic units gradually increase.
  • a semiconductor device includes:
  • the transport cavity is used to transport the substrate
  • a preheating cavity arranged on the side wall of the conveying cavity, for heating the substrate
  • the cleaning cavity is arranged on the side wall of the transport cavity for cleaning the substrate
  • a transition cavity is arranged on the side wall of the transport cavity, the substrate enters the growth cavity through the transition cavity, and the substrate deposits a thin film in the growth cavity;
  • a susceptor is arranged in the growth chamber, and the susceptor allows the substrate to be placed;
  • the target is set in the growth cavity
  • a magnet is arranged at a position opposite to the target material, the magnet includes a plurality of magnetic units, and the magnet forms an arc-shaped magnetic field.
  • the present invention provides a semiconductor device that forms a uniform arc magnetic field around a target by a magnet, improves the utilization rate and sputtering uniformity of sputtering ion bombardment of the target, and ensures the deposition uniformity of sputtering ions, thereby improving The thickness uniformity of the coating is improved.
  • Figure 1 A schematic diagram of the growth chamber proposed in this embodiment.
  • Figure 2 Another schematic diagram of the base in this embodiment.
  • Figure 3 Schematic diagram of the back of the base in this embodiment.
  • Figure 4 A schematic diagram of the heater in this embodiment.
  • Figure 5 Another schematic diagram of the heater in this embodiment.
  • FIG. 6 A brief schematic diagram of the temperature measuring device in this embodiment.
  • Figure 7 A schematic diagram of the magnet in this embodiment.
  • Figure 8 Another schematic diagram of the magnet in this embodiment.
  • Figure 9 Another schematic diagram of the magnet in this embodiment.
  • Figure 10 A schematic diagram of the reflector in this embodiment.
  • Figure 11 A schematic diagram of the clamp in this embodiment.
  • Figure 12 A schematic diagram of the cooling device in this embodiment.
  • Figure 13 A schematic diagram of the air inlet in this embodiment.
  • Figure 14 A schematic diagram of the intake duct in this embodiment.
  • Figure 15 A schematic diagram of the bottom of the intake duct in this embodiment.
  • Figure 16 Another schematic diagram of the air inlet in this embodiment.
  • Figure 17 Another schematic diagram of the air inlet in this embodiment.
  • Figure 18 Another schematic diagram of the air inlet in this embodiment.
  • Figure 19 Another schematic diagram of the air inlet in this embodiment.
  • Fig. 20 A schematic diagram of the semiconductor device proposed in this embodiment.
  • Figure 21 A schematic diagram of the transition cavity in this embodiment.
  • Figure 22 A schematic diagram of the cooling plate in this embodiment.
  • Figure 23 A schematic diagram of the base in this embodiment.
  • Figure 24 A schematic diagram of the carrier and the tray in this embodiment.
  • Figure 25 A schematic diagram of the cleaning cavity in this embodiment.
  • Figure 26 A schematic diagram of the lifting and rotating mechanism in this embodiment.
  • Figure 27 Another schematic diagram of the cleaning cavity in this embodiment.
  • Figure 28 A schematic diagram of the bushing and coil assembly in this embodiment.
  • Figure 29 A schematic diagram of the preheating cavity in this embodiment.
  • Figure 30 A schematic diagram of the heater in this embodiment.
  • Figure 31 A schematic diagram of the heating coil in this embodiment.
  • Figure 32 A brief schematic diagram of the temperature measurement points in this embodiment.
  • Fig. 33 A flowchart of the method of using the semiconductor device in this embodiment.
  • Figure 34 Analysis diagram of aluminum nitride coating in this embodiment.
  • Figure 35 Electron micrograph of the aluminum nitride film in this embodiment.
  • Fig. 36 A rocking curve diagram of the aluminum nitride film in this embodiment.
  • this embodiment provides a semiconductor device 100 which includes a growth chamber 110, a base 111, a target 123 and a magnet 122.
  • the susceptor 111 is arranged in the growth chamber 110.
  • the susceptor 111 can be arranged at the bottom end of the growth chamber 110.
  • a plurality of substrates 112 are allowed to be placed on the front surface of the susceptor 111, for example, four or six or more substrates can be placed. Or fewer substrates 112.
  • a substrate 112 is provided on the base 111.
  • the diameter of the base 111 is in the range of 200mm-800mm, for example, 400-600mm.
  • the size of the base 111 is, for example, 2-12 inches, such as 4 inches, 6 inches, 8 inches, 10 inches, 12 inches, or other sizes.
  • the susceptor 111 may be formed of a variety of materials, including silicon carbide or graphite coated with silicon carbide.
  • the base 111 includes a silicon carbide material and has a surface area of 2000 square centimeters or more, such as 5000 square centimeters or more, and for example 6000 square centimeters or more.
  • the substrate 112 may include sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper and/or aluminum gallium nitride, and the substrate 112 may also be sodium, for example. Lime glass and/or high silica glass. Generally speaking, the substrate 112 may be composed of the following materials: materials with compatible lattice constants and thermal expansion coefficients, substrates compatible with the III-V materials grown on them, or thermally stable and chemically stable at III-V growth temperatures. Warm substrate. The size of the substrate 112 may range from 50 mm to 100 mm (or more) in diameter.
  • the size of the substrate 112 is, for example, 2-12 inches, such as 4 inches, 6 inches, 8 inches, 10 inches, 12 inches, or other sizes.
  • the substrate 112 is, for example, a silicon substrate.
  • a metal compound film may be formed on the silicon substrate, such as an aluminum nitride film or a gallium nitride film, such as a (002)-oriented aluminum nitride film.
  • the base 111 is also connected to a drive unit 113, which is connected to a control unit (not shown).
  • the drive unit 113 is used to drive the base 111 to rise or fall.
  • the drive unit 113 can use a drive device such as a servo motor or a stepping motor.
  • the control unit is used to control the drive unit 113 to drive the base 111 to rise during the magnetron sputtering process, so that the distance between the target 123 and the base 111 is always maintained at a predetermined value, which can be set according to specific needs In order to obtain the optimal value of the process results such as ideal film uniformity and deposition rate. Therefore, by using the control unit to control the driving unit 113 to drive the susceptor 111 to rise during the magnetron sputtering process, so that the target-base distance always maintains the optimal value, the film uniformity and deposition rate can be improved, and the process can be improved. quality.
  • the control unit can be a host computer or PLC, etc.
  • the base 111 can also be connected to a rotating unit, which is used to rotate the base 111 during the film deposition, so as to further improve the thickness uniformity of the coating film and the stress uniformity of the coating film.
  • the semiconductor device 100 may further include a load lock chamber, a carrier box, and an optional MOCVD reaction chamber (not shown) for a large number of applications.
  • the choice of substrate includes but is not limited to sapphire, SiC, Si, diamond, LiAlO 2 , ZnO, W, Cu, GaN, AlGaN, AlN, soda lime/high silica glass, with matching lattice constants and
  • the selection of the target material includes, but is not limited to, Al-containing metals, alloys, compounds, such as Al, AlN, AlGa, Al 2 O 3, etc., and the target material can be doped with group II/IV/VI elements, To improve layer compatibility and device performance.
  • the sputtering process gas may include, but is not limited to, nitrogen-containing gas such as N 2 , NH 3 , NO 2 , NO, etc., and inert gas such as Ar, Ne, Kr, etc.
  • the semiconductor device of the present invention may involve an apparatus and method for forming a high-quality buffer layer and a III-V family layer, which can be used to form possible semiconductor components , Such as radio frequency components, power components, or other possible components.
  • the middle part of the base 111 is convex relative to the edge, and the substrate 112 is disposed on the middle part of the base 111, so that a part of the substrate 112 covers the edge area and is spaced from the edge area. open.
  • the substrate 112 is heated by ion bombardment during the entire deposition process.
  • the substrate 112 is, for example, a silicon substrate or silicon carbide.
  • a metal compound film such as an aluminum nitride film or a gallium nitride film, may be formed on the silicon substrate or silicon carbide substrate, such as ( 002) Oriented aluminum nitride film.
  • Figure 3 shows the back of the base 111.
  • a heater is provided on the back of the base 111.
  • the heater includes a plurality of heating electrodes 126 and a heating coil 127.
  • a plurality of heating electrodes 126 are connected to one heating coil 127.
  • the heating coil 127 is specifically designed.
  • the heating coil 127 includes a first part and a second part. The first part and the second part are connected symmetrically about the center of the heating coil 127, and the first part is sequentially from the outside to the inside.
  • the first arc edge 127a, the second arc edge 127b, and the third arc edge 127c are included.
  • the first arc edge 127a, the second arc edge 127b, and the third arc edge 127c may be concentric circles.
  • One end of the first arc 127a is connected to one end of the second arc 127b
  • the other end of the second arc 127b is connected to the third arc 127c
  • the first part is connected to the second part through the third arc 127c, forming a circular heating coil 127.
  • the other end of the first arc 127a is connected to the heating electrode 126.
  • the heating coil 127 starts to heat the susceptor 111.
  • the heating coil 127 can ensure the uniformity of heating to the susceptor 111, thereby ensuring the uniformity of the temperature of the substrate 112.
  • the heating coil 127 may be arranged on a pyrolytic boron nitride substrate, for example. In some embodiments, in order to further improve the uniformity of heating, the shape and number of turns of the heating coil 127 can be adjusted. In this embodiment, seven heating electrodes 126 are provided on the back of the base 111. In other embodiments, to improve the uniformity of heating, eight or more heating electrodes 126 may be provided.
  • the heating coil 127 in order to further improve the heating uniformity of the base 111, can be adjusted.
  • the heating coil 127 is formed by bending an enameled wire 127d.
  • the cross section can be round or square or flat. According to actual conditions, the number of turns of the enameled wire 127d can be adjusted, or the heating coil 127 can be set in an asymmetrical shape, or the enameled wire can be made into other shapes.
  • a temperature measuring point 128 is further provided at a position close to the heating electrode 126, and the temperature measuring point 128 is connected to the temperature measuring device.
  • the temperature measuring device It includes a detection circuit 129a and a temperature acquisition module 129b connected in sequence.
  • the detection loop 129a is composed of conductors of two different materials, and one end (working end) of the detection loop 129a is in contact with the temperature measuring point 128 to generate a pyroelectric signal.
  • the temperature acquisition module 129b is configured to receive the pyroelectric signal through the first detection point and the second detection point at the other end (free end) of the detection loop 129a, and calculate the temperature of the temperature measurement point 128 according to the pyroelectric signal. Since the detection circuit 129a is composed of conductors of two different materials, the pyroelectric signal will affect the potential difference between the first detection point and the second detection point. The temperature acquisition module 129b calculates the potential difference between the first detection point and the second detection point. Calculate the temperature at the temperature measurement point 128.
  • the temperature measuring device may be, for example, a thermocouple.
  • thermometers can also be used to measure the temperature on the base 111
  • an infrared thermometer can also be used to measure the temperature on the base 111.
  • the temperature measurement device can know the temperature at each position of the susceptor 111 in real time, which can ensure that the temperature on the susceptor 111 is in a uniform and stable state, and it can also ensure that the substrate 112 on the susceptor 111 is uniform and stable. Temperature environment.
  • the target 123 is set on the top of the growth chamber 110, and the target 123 is electrically connected to a sputtering power supply (not shown). During the magnetron sputtering process, the sputtering power supply is directed to the target The material 123 outputs sputtering power so that the plasma formed in the growth chamber 110 etches the target 123.
  • the sputtering power supply may include a DC power supply, an intermediate frequency power supply, or a radio frequency power supply.
  • the target 123 has at least one surface portion composed of a material to be sputter deposited on the substrate 112 provided on the base 111.
  • a substantially pure aluminum target when forming an aluminum nitride film, for example, may be used to form an AlN-containing buffer layer, which is sputtered by using a plasma including an inert gas (such as argon) and a nitrogen-containing gas. Shoot the pure aluminum target.
  • a continuous AlN thin film is deposited on the substrate 112 by using an aluminum-containing target and a nitrogen-containing process gas.
  • the target 123 may be formed of a material selected from but not limited to the following groups: substantially pure aluminum, aluminum alloy-containing, aluminum-containing compounds (such as AlN, AlGa, Al 2 O 3 ) and aluminum-containing targets doped with group II/IV/VI elements to improve layer compatibility and device performance.
  • the processing gas used during the sputtering process may include, but is not limited to, nitrogen-containing gas and inert gas, such as nitrogen (N 2 ), ammonia (NH 3 ), nitrogen dioxide (NO 2 ), nitrogen oxides (NO ) And so on, inert gases such as argon (Ar), neon (Ne), krypton (Kr) and so on.
  • doping atoms can be added to the deposited film by using a doping target material and/or delivering a doping gas to the generated sputtering plasma to adjust the electrical characteristics and mechanical properties of the deposited PVD AlN buffer layer. Characteristics and optical characteristics, for example, to make the thin film suitable for manufacturing III-nitride devices thereon.
  • the thickness of the thin film (for example, the AlN buffer layer) formed in the growth chamber 110 is between 0.1-1000 nanometers.
  • the magnet 122 is located above the target 123, and the magnet 122 rotates around the central axis of the target 123.
  • the magnet 122 rotates 90°, 180°, 360° around the central axis of the target 123. ° or any other angle, or the magnet 122 can rotate around the center axis of the target 123 by any angle.
  • the magnet 122 is connected to a driving mechanism, and the driving mechanism drives the magnet 122 to rotate while also performing up and down reciprocating motions.
  • the driving mechanism includes a first motor 114, a transmission rod 115, a second motor 116 and a lifting assembly.
  • the first motor 114 is connected to the second motor 116 through the transmission rod 115.
  • the first motor 114 is, for example, a servo motor or a stepping motor.
  • the transmission rod 115 may be, for example, a screw rod
  • the second motor 116 is, for example, a rotary servo motor.
  • a motor 114 can drive the second motor 116 to reciprocate up and down through the transmission rod 115.
  • the first motor 114 drives the transmission rod 115 in a forward or reverse direction to make the second motor 116 reciprocate.
  • the lifting assembly includes an outer shaft 118 and an inner shaft 119.
  • the inner shaft 119 is arranged in the outer shaft 118, the inner shaft 119 is allowed to move along the outer shaft 118, and the outer shaft 118 is provided on the growth cavity 110.
  • Part of the inner shaft 119 is set in the growth chamber 110, and a fixing device 121 is also provided on one end of the inner shaft 119.
  • the magnet 122 is fixed on one end of the inner shaft 119 by the fixing device 121, and at the same time, the outer shaft 118 is in contact with the growth chamber.
  • a sealing device 120 is also arranged around the body 110 in contact, and vacuum sealing is achieved by the sealing device 120.
  • the sealing device 120 may be, for example, a sealing ring.
  • the second motor 116 is connected to the inner shaft 119 through the output shaft 117, and the output shaft 117 is partially located in the outer shaft 118.
  • the second motor 116 can drive the inner shaft 119 to rotate through the output shaft 117, and the first motor 114 drives the second motor 116 through the transmission rod 115 to reciprocate up and down, so that when the first motor 114 and the second motor 116 are turned on at the same time, the inner shaft 119 can reciprocate up and down while also performing rotational movement. Therefore, the magnet 122 on the inner shaft 119 can be driven to move accordingly.
  • the inner shaft 119 can only reciprocate up and down.
  • the first motor 114 is turned off and the second motor 116 is turned on
  • the inner shaft 119 can only perform rotational movement. Therefore, the worker can choose to turn on and/or turn off the first motor 114 and/or the second motor 116 according to the implementation situation.
  • the target 123 when the magnet 122 is rotating, the target 123 can remain stationary or rotate around its own central axis, but there is a speed difference between the target 123 and the magnet 122.
  • the target 123 can be driven to rotate around its own central axis by a power source such as a motor, so that there is a speed difference between the target 123 and the magnet 122.
  • the relative movement of the target 123 and the magnet 122 can make the magnetic field generated by the magnet 122 evenly scan the sputtering surface of the target 123, and since the electric field and the magnetic field uniformly distributed on the sputtering surface of the target 123 in this embodiment are simultaneously Acting on the secondary electrons, the trajectory of the secondary electrons can be adjusted to increase the number of collisions between the secondary electrons and argon atoms, so that the argon atoms near the sputtering surface of the target 123 are fully ionized to generate more argon ions; and By bombarding the target material 123 with more argon ions, the sputtering utilization rate and sputtering uniformity of the target material 123 can be effectively improved, and the quality and uniformity of the deposited film can be further improved.
  • the magnet 122 includes a first part, a second part, and a plurality of third parts, and the plurality of third parts are connected between the first part and the second part.
  • the first part includes a first magnetic unit 1221
  • the second part includes a second magnetic unit 1222, a third magnetic unit 1223 and a fourth magnetic unit 1224
  • the third part includes a fifth magnetic unit 1225, a sixth magnetic unit 1226 and a seventh magnetic unit.
  • Unit 1227 both ends of the first part are respectively connected to one end of the third part.
  • both ends of the first magnetic unit 1221 are connected to the third part. More specifically, both ends of the first magnetic unit 1221 are respectively connected to the third part.
  • Five magnetic units 1225 are respectively connected to one end of the third part.
  • the two ends of the second part are respectively connected to the other end of the third part, wherein both ends of the fourth magnetic unit 1224 of the second part are connected to one end of the third magnetic unit 1223, and the other end of the third magnetic unit 1223 is connected to the second magnetic unit.
  • the unit 1222 and the third magnetic unit 1223 are arranged obliquely between the second magnetic unit 1222 and the fourth magnetic unit 1224, so that the fourth magnetic unit 1224 is recessed inward to form a recess.
  • the second part may have a symmetric structure, that is, the second magnetic unit 1222 and the third magnetic unit 1223 are symmetrical about the center of the fourth magnetic unit 1224. Further, the length of the second part is greater than the length of the first part.
  • the third part includes a fifth magnetic unit 1225, a sixth magnetic unit 1226 and a seventh magnetic unit 1227 connected in sequence.
  • the fifth magnetic unit 1225 is also connected to the first magnetic unit 1221
  • the seventh magnetic unit 1227 is also connected to the second magnetic unit 1222.
  • the slopes of the fifth magnetic unit 1225, the sixth magnetic unit 1226 and the seventh magnetic unit 1227 become larger in turn, that is, the slope of the seventh magnetic unit 1227 is greater than the slope of the sixth magnetic unit 1226, and the slope of the sixth magnetic unit 1226 is greater than the slope of the sixth magnetic unit 1226.
  • the plurality of third parts are symmetrical with respect to the central axis of the first part and the second part.
  • a plurality of magnetic units are spliced into a symmetrical ring-shaped magnet 122.
  • an arc-shaped magnetic field can be formed, and when the magnet 122 rotates around the target 123, a uniform magnetic field can be formed.
  • the uniform magnetic field can provide the sputtering uniformity of the target material, thereby achieving the uniformity of the coating film.
  • the magnet 122 may also have an arc structure.
  • the magnet 122 includes a first magnetic unit 1221, a second magnetic unit 1222, and a plurality of third magnetic units 1223.
  • the first magnetic unit 1221 The second magnetic unit 1222 is connected through the third magnetic unit 1223, wherein the first magnetic unit 1221 and the second magnetic unit 1222 are, for example, arc-shaped, and the first magnetic unit 1221 and the second magnetic unit 1222 have the same arc-shaped structure,
  • the third magnetic unit 1223 is connected between the first magnetic unit 1221 and the second magnetic unit 1222 and is symmetrical about the central axis of the first magnetic unit 1221 and the second magnetic unit 1222.
  • an arc-shaped magnetic field can be formed, and when the magnet 122 rotates around the target 1223, a uniform magnetic field can be formed.
  • the uniform magnetic field can provide the sputtering uniformity of the target material, thereby achieving the uniformity of the coating film.
  • the magnet 122 may also have an approximately rectangular structure.
  • the magnet 122 includes a plurality of first magnetic units 1221 arranged oppositely and a plurality of second magnetic units 1222 arranged oppositely.
  • the magnetic unit 1221 is connected to the second magnetic unit 1222.
  • the first magnetic unit 1221 can have an arc-shaped structure, and the first magnetic unit 1221 can be recessed inward or outward. Multiple first magnetic units 1221 can also be inward or outward at the same time.
  • the plurality of first magnetic units 1221 may also include different arc-shaped structures.
  • the magnet 122 can have a symmetrical structure or an asymmetrical structure.
  • an arc-shaped magnetic field can be formed.
  • a uniform magnetic field can be formed. The uniform magnetic field can provide the sputtering uniformity of the target material, thereby achieving the uniformity of the coating film.
  • the growth chamber 110 may include an outer wall 110a and an inner wall 110b, the inner wall 110b is disposed in the outer wall 110a, the inner wall 110b is fixed in the outer wall 110a by a plurality of bolts, so the outer wall 110a and the inner wall 110b A ring-shaped structure is formed.
  • the ring-shaped structure can slow down heat loss.
  • the inner wall 110b is also provided with a multi-layer reflector, for example, the inner wall 110b is sequentially provided with a first reflector 111a and a second reflector 111b from the inside to the outside. The first reflector 111a and the second reflector 111b are attached in sequence, and the deposition is performed.
  • the radiant heat can be isolated in time by arranging a multilayer reflector on the inner wall 110b to prevent the heat from escaping outward.
  • the first reflection plate 111a and the second reflection plate 111b are circularly arranged on the inner wall 111b.
  • the first reflective plate 111a may be composed of an integral thermal insulation material or a plurality of thermal insulation materials
  • the second reflective plate 111b may be composed of an integral thermal insulation material or a plurality of thermal insulation materials.
  • two reflective plates are provided on the inner wall 110b, and in some embodiments, three or four or more or fewer reflective plates can be provided.
  • a plurality of clamps 132 are provided on the inner wall 111b of the growth chamber 110, and the clamps 132 are used to fix the first reflector 111a and the second reflector 111b.
  • the clamp 132 includes a plurality of limit bars 1321, two adjacent limit bars 1321 form a slot 1322, the limit bar 1321 at one end of the clamp 132 is arranged on the inner wall 110b, and then the first reflection The plate 111a and the second reflecting plate 111b are arranged in the corresponding slot 1322.
  • the first reflection plate 111a and the second reflection plate 111b are arranged in the adjacent slot 1322.
  • the first reflection plate 111a and the second reflection plate 111b can be arranged in the corresponding card slots at intervals. Slot 1322. Both ends of the first reflector 111a and the second reflector 111b each include a bent portion (not shown). The bent portions at both ends of the first reflector 111a protrude from the slot 1322, so the first reflector 111a is round
  • the shape is arranged on the inner wall 110b. In this embodiment, six clamps 132 are provided on the inner wall 110b, and the clamps 132 are evenly arranged on the inner wall 110b. In some embodiments, eight or ten or more or less clamps 132 may be provided on the inner wall 110b.
  • the first reflector 111a and the second reflector 111b can also be arranged on the inner wall 110b in other ways, for example, the first reflector 111a and the second reflector 111b can be fixed by bonding or nut fixing.
  • the inner wall 110b the outer wall 110a, the inner wall 110b, the first reflecting plate 111a, and the second reflecting plate 111b are provided with through holes 130 of the same size at the same positions.
  • the through holes 130 are located higher than the base 111.
  • the through holes 130 of the outer wall 110a and the inner wall 110b are provided with a high temperature resistant transparent material. In this way, the staff can understand the growth situation in the growth cavity 110 from the outside of the growth cavity 110.
  • a baffle 131 is also provided on the inner wall 110b.
  • the baffle 131 is set at the position of the through hole 130.
  • the baffle 131 can completely cover the through hole 131.
  • the baffle 131 is set on the inner wall 110b through a bracket.
  • the position of the baffle 131 is Allow adjustments. After the staff has observed the growth in the growth chamber 110, the baffle 131 can be placed in front of the through hole 130, so that the sputtering ions cannot be provided with high temperature resistant transparent on the through hole 130 of the outer wall 110a and the inner wall 110b. Deposited on the material.
  • the through hole 130 on the outer wall 110a may be larger than the through hole 130 on the inner wall 110b to expand the viewing angle and facilitate the observation of the growth in the growth chamber 110.
  • a cooling device 140 is further provided on the outer wall 110b of the growth chamber 110, and the cooling device 140 is used to absorb the heat lost to the outer wall 110a to prevent the outer wall 110a from deforming due to high temperature.
  • the cooling device 140 is, for example, a water pipe surrounding the outer wall 110a. One end of the water pipe is a water inlet, and the other end of the water pipe is a water outlet. By forming the water pipe into a circulating water path, it effectively absorbs the outer wall. The temperature on 110a. At the same time, when the semiconductor device 100 has completed its work, the cooling device 140 can also help the growth cavity 110 to cool down and improve efficiency.
  • the growth chamber 110 includes at least one air inlet, the air inlet is connected to an external air source 124, the external air source 124 through the air inlet Gas is fed into the growth chamber 110.
  • the growth chamber 110 includes at least one suction port, and the suction port is connected to a vacuum pump 125, and the vacuum pump 125 vacuumizes the growth chamber 110 through the suction port.
  • the growth chamber 110 includes at least two air inlets, for example, a first air inlet 119a and a second air inlet 119b, the first air inlet 119a and the second air inlet 119b, respectively Set on opposite sides of the growth chamber 110, the first air inlet 119a and the second air inlet 119b are staggered, and the first air inlet 119a and the second air inlet 119b can be input into the growth chamber 110 gas.
  • the first air inlet 119a and the second air inlet 119b are respectively connected to an air inlet pipe 200.
  • the air inlet pipe 200 includes an outer sleeve 210 and an inner sleeve 220.
  • the inner sleeve 220 is arranged in parallel on the outer sleeve.
  • one end of the inner sleeve 220 can be connected with one end of the outer sleeve 210 to form a closed annular cavity.
  • One end of the air inlet pipe 200 is connected to the air inlet, and the other end of the air inlet pipe 200 can contact the inner wall of the growth cavity 110 or the other end of the air inlet pipe 200 has a certain gap with the inner wall of the growth cavity 110.
  • the outer sleeve 210 includes a plurality of first exhaust holes 211, and the inner sleeve 210 includes a plurality of second exhaust holes 221.
  • the plurality of first exhaust holes 211 are respectively uniformly arranged on the outer sleeve 210, and the plurality of second exhaust holes
  • the vent holes 221 are uniformly arranged on the inner sleeve 220 respectively, wherein the size of the second vent hole 221 is greater than or equal to the size of the first vent hole 211, so the first vent hole 211 and the second vent hole 221 Can be staggered or partially overlapped or overlapped.
  • the size of the first vent hole 211 is smaller than the size of the second vent hole 221, and the first vent hole 211 and the second vent hole 221 are staggered, and the first vent hole 211 and the second vent hole 221 are staggered.
  • the exhaust hole 221 is, for example, one of a circle, a rectangle, a triangle, or a combination thereof.
  • the external airflow first enters the inner sleeve 220, then enters the annular cavity through the second exhaust hole 221 on the inner sleeve 220, and then enters the growth chamber more evenly from the first exhaust hole 211 on the outer sleeve 210 In this way, the flow rate of the airflow entering the growth chamber 110 can be greatly slowed down without being disordered, thereby greatly reducing the vibration of equipment and products caused by the impact of airflow, and avoiding equipment damage The phenomenon of product damage and uniform air flow into the growth chamber 110 can also improve the uniformity of the coating.
  • the air inlet pipe 200 is connected to the air inlet through a branch pipe 230, the branch pipe 230, one end of the branch pipe 230 is fixed on the air inlet, and the other end of the branch pipe 230 is connected to the outer jacket
  • an exhaust pipe 240 is further provided on the outer wall of the growth chamber 110, and the exhaust pipe 240 is kept in a sealed state with the outer wall of the growth chamber 110.
  • the exhaust pipe 240 is arranged on the air inlet, and the exhaust pipe 240 An external gas source 250 is also connected, through which gas is delivered into the branch pipe 230 through the exhaust pipe 240, and when the gas enters the inner sleeve 220, it passes through a plurality of second exhaust holes on the inner sleeve 220 221 enters into the outer sleeve 210, and then enters into the growth chamber 110 through the plurality of first exhaust holes 211 on the outer sleeve 210, so that the flow rate of the airflow entering the growth chamber 110 can be greatly slowed down It will not be disordered, thus greatly reducing the vibration of equipment and products caused by the impact of airflow, avoiding equipment damage and product damage.
  • an air flow regulator may also be provided on the branch pipe 230 or the exhaust pipe 240, and the air flow regulator may be used to adjust the gas flow rate in the air inlet pipe 200.
  • FIG. 15 there is a certain gap between the bottom of the inner sleeve 220 and the bottom of the outer sleeve 210, for example, 2-3 mm.
  • a plurality of second exhaust holes 221 are provided on the bottom of the inner sleeve 220, and a plurality of first exhaust holes 211 are provided on the bottom of the outer sleeve 210, and the diameter of the second exhaust holes 221 is larger than that of the first row.
  • the diameter of the air holes 211 so the relative density of the first air holes 211 is greater than the relative density of the second air holes 221, and the first air holes 211 and the second air holes 221 are staggered or overlapped or partially overlapped.
  • a plurality of through holes are provided on one end of the air inlet pipe 200, which can further improve the uniformity of the air flow into the growth chamber 110.
  • four air inlets are provided on the side wall of the growth chamber 110, namely, a first air inlet 119a, a second air inlet 119b, a third air inlet 119c, and The fourth air inlet 119d.
  • the four air inlets are respectively connected to an air inlet pipe 200, and gas is input to the growth chamber 110 through the four air inlets, thereby improving the uniformity of the gas in the growth chamber 110, thereby improving the coating film The uniformity.
  • two air inlets are provided on the side wall of the growth chamber 110, namely, a first air inlet 119a and a second air inlet 119b.
  • the first air inlet 119a and the second air inlet 119b are offset from each other.
  • the first air inlet 119a and the second air inlet 119b are respectively connected to an air inlet pipe 200, and the air inlet pipe 200 includes a plurality of exhaust holes 201, so that the gas becomes more uniform after entering the growth chamber 110.
  • the diameter of the air inlet pipe 200 connected to the first air inlet 119a and the second air inlet 119b may be the same or different in order to adjust the flow rate of the gas.
  • an air inlet 119a is provided on the side wall of the growth chamber 110, an air inlet pipe 200 is connected to the first air inlet 119a, and the air inlet pipe 200 includes multiple Each exhaust hole 201, the diameter of the plurality of exhaust holes 201 can be the same or different, so as to adjust the gas flow rate.
  • a plurality of air inlets are provided on the top of the growth chamber 110, namely, a first air inlet 119a and a second air inlet 119b.
  • the two air inlets 119b are respectively connected to an air inlet pipe 200.
  • the air inlet pipe 200 is located above the target 112.
  • the air inlet pipe 200 includes a plurality of exhaust holes 201, so that the gas enters the growth chamber 110 and becomes more Uniformity, which improves the sputtering uniformity of the target material 112 and the utilization rate of the target material 112 to improve the uniformity of the coating film.
  • the diameter of the air inlet pipe 200 connected to the first air inlet 119a and the second air inlet 119b may be the same or different in order to adjust the flow rate of the gas.
  • this embodiment also proposes a semiconductor device 300 which includes a transfer cavity 310, a transition cavity 320, a cleaning cavity 330, a preheating cavity 340 and a plurality of growth cavities 350.
  • the controller can be any form of general data processing system.
  • the controller can be used in industrial settings to control various sub-processors and sub-controllers.
  • the controller includes a central processing unit (CPU), which communicates with memory and input/output (I/O) circuits among other common elements.
  • the controller may perform or otherwise initialize one or more operations of the operations of any of the methods/processes described herein.
  • Any computer program code that performs and/or initializes these operations can be embodied as a computer program product.
  • Each computer program product described herein can be run by a computer readable medium (for example, floppy disk, optical disk, DVD, hard drive, random access memory, etc.).
  • the transfer chamber 310 includes a substrate handling robot 311, and the substrate handling robot 311 can be operated to transfer substrates between the transition chamber 320 and the growth chamber 350. More specifically, the substrate loading and unloading robot 311 may have dual substrate loading and unloading blades suitable for simultaneously transferring two substrates from one chamber to another chamber. The substrate can be transferred between the transfer chamber 310 and the dual growth chamber 350 via the slit valve 312. The movement of the substrate loading and unloading robot arm 311 can be controlled by a motor drive system (not shown), and the motor drive system can include a servo motor or a stepping motor.
  • the semiconductor device further includes a manufacturing interface 313.
  • the manufacturing interface 313 includes a cassette and a substrate handling robot (not shown).
  • the cassette contains a substrate that needs to be processed.
  • the loading and unloading robot arm may include a substrate planning system to load the substrate in the cassette into the transition cavity 320, specifically, to place the substrate on the tray of the carrier.
  • the transition cavity 320 is connected to the transfer cavity 310, and the transition cavity 320 is located between the manufacturing interface 313 and the transfer cavity 310.
  • the transition cavity 320 provides a vacuum interface between the manufacturing interface 313 and the transfer cavity 310.
  • the transition cavity 320 includes a casing 320a, which is, for example, a sealed cylinder, and a suction port and an exhaust port are provided on the side wall of the casing 320a.
  • a cooling plate 322 is provided in the transition cavity 320, and the cooling plate 322 is fixed to the bottom of the casing 320a by a plurality of brackets 321.
  • the cooling plate 322 can cool the substrate.
  • the cooling plate 322 may be cylindrical or rectangular or other shapes, for example, and the cooling plate 322 may be fixed in the housing 320a by four brackets 321, for example.
  • the cooling plate 322 is cylindrical, and the cooling plate 322 includes a plurality of internally threaded holes 322a, for example, four internally threaded holes 322a. Corresponding external threads are provided on both ends of the bracket 321, so that one end of the bracket 321 can be arranged in the internal threaded hole 322a.
  • the base 3211 includes a plurality of first threaded holes 3211a and a second threaded hole 3211b.
  • the threaded hole 3211b is located at the center of the base 3211, and a plurality of first threaded holes 3211a are evenly arranged around the second threaded hole 3211b.
  • the other end of the bracket 321 is arranged in the second threaded hole 3211b, and the plurality of first threaded holes 3211a are used for placing a plurality of nuts, so that the base 3211 can be fixed in the housing 320a.
  • the base 3211 includes six first threaded holes 3211a. In some embodiments, four or more first threaded holes 3211a may be provided on the base 3211.
  • At least one stage is provided in the housing 320a, for example, two stages are provided, such as the first stage 325 and the second stage 328.
  • the first stage 325 level and the second stage 328 are fixed on the supporting plate 323, and the first stage 325 is located on the second stage 328.
  • the supporting plate 323 includes a main pole and two side plates. The two side plates are respectively arranged at both ends of the main pole.
  • the first stage 325 and the second stage 328 are arranged between the two side plates.
  • the support plate 323 is also connected to a control rod 324.
  • the control rod 324 is connected to the main rod of the support plate 323, and one end of the control rod 324 is also located outside the housing 320a.
  • the rod 324 can drive the support plate 114 to rise and/or fall.
  • the control rod 324 is connected to a driving unit (not shown), and the driving unit is used to control the control rod 324 to rise and/or fall.
  • the driving unit controls the lever 324 to descend, the second stage 328 can contact the cooling plate 322.
  • At least one tray can be placed on the first stage 325 and the second stage 328.
  • the tray is used to place substrates.
  • One tray 3251 can be placed on the 325, and two or three or more trays 3251 can also be placed on the 325.
  • the tray 3251 may be formed of a variety of materials, including silicon carbide or graphite coated with silicon carbide.
  • At least one substrate may be provided on the tray 3251, and the substrate may include sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper and/or aluminum gallium nitride, and the substrate may also include, for example, sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper, and/or aluminum gallium nitride. It is soda lime glass and/or high silica glass.
  • the substrate may be composed of the following materials: materials with compatible lattice constants and thermal expansion coefficients, substrates compatible with the III-V materials grown on them, or thermally stable and chemically stable at the III-V growth temperature.
  • the substrate is, for example, a silicon substrate or a silicon carbide substrate, and a metal nitride film, such as an aluminum nitride film or a gallium nitride film, can be formed on the silicon substrate or silicon carbide substrate, for example, It is a (002) oriented aluminum nitride film.
  • a stage may be arranged in the transition cavity 320, and at least one substrate may be arranged on the stage.
  • the substrate can be placed in the growth chamber by raising the stage, and when the substrate completes the corresponding After all the processes, the substrate is placed on the carrier and lowered onto the cooling plate 322 through the carrier to cool the substrate.
  • the transition cavity 320 further includes an air extraction port, which is connected to a vacuum pump 327, and the transition cavity 320 is evacuated by the vacuum pump 327.
  • vacuum processing is achieved through multiple steps. For example, a dry pump (Dry Pump) is used to pump the transition chamber 320 to 1 ⁇ 10 -2 Pa, and then a turbo molecular pump (Turbo Molecular Pump) is used to transfer the transition chamber 320 to 1 ⁇ 10 -2 Pa.
  • the cavity 320 is pumped to 1 ⁇ 10 -4 Pa or less than 1 ⁇ 10 -4 Pa.
  • the control rod 324 drives the first stage 325 and the second stage 328 along The preset path moves, for example, the control rod 324 drives upward movement.
  • the transition cavity 320 is connected to the transfer cavity, and the substrate loading and unloading robot in the transfer cavity transfers the substrate from the transition cavity 320 to the transfer cavity, and then the substrate is transferred to the transfer cavity by the substrate loading and unloading robot.
  • Other cavities such as preheating cavity, cleaning cavity or growth cavity.
  • a film can be formed on the surface of the substrate.
  • the material of the film can include aluminum oxide, hafnium oxide, titanium oxide, and nitrogen.
  • the substrate loading and unloading robot in the transfer cavity transfers the substrate to the second stage 328 in the transition cavity 320, and then the control rod 324 drives the first stage 325 and the second stage 328 moves in a direction opposite to the preset path, for example, downwards, the second stage 328 is in contact with the cooling plate 322, and the second stage 328 and the substrate on the second stage 328 are applied to the second stage 328 through the cooling plate 322. Cool down.
  • an exhaust port is also included on one side of the housing 320a. The exhaust port is connected to an air source 326.
  • the second carrier 328 is first driven by the control rod 324 Keep away from the cooling plate 322, so that there is a preset distance between the second carrier 328 and the cooling plate 322, the preset distance is, for example, 5-10 mm, and then the gas source 326 passes through the exhaust port to the transition cavity 320.
  • Nitrogen or argon gas is introduced to perform vacuum breaking treatment on the transition cavity 320, so as to prevent the substrate from being cooled and causing cracks on the substrate due to the introduction of nitrogen. After the transition cavity 320 has broken the vacuum, the substrate can be taken out for storage and analysis.
  • the substrate when the substrate is placed in the transition cavity 320, nitrogen or argon is first introduced into the transition cavity 320 through the exhaust port, so that the transition cavity 320 reaches atmospheric pressure balance, or the transition cavity
  • the pressure in the body 320 is greater than the atmospheric pressure, which prevents pollutants from entering the transition cavity 320 due to the negative pressure difference.
  • the size of the substrate can be 2 inches, 4 inches, 6 inches, 8 inches or 12 inches.
  • the cleaning cavity 330 is connected to the transfer cavity 310.
  • the cleaning cavity 330 is located on the side wall of the transfer cavity 310.
  • the transfer cavity 310 The substrate handling robot 311 then transfers the substrate from the transition cavity 320 to the cleaning cavity 330 for cleaning.
  • a substrate support assembly 331 is disposed in the cleaning cavity 330, the substrate support assembly 331 is disposed at the bottom of the cleaning cavity 330, and the substrate support assembly 331 does not contact the cleaning cavity 330.
  • the substrate support assembly 331 includes a pedestal electrode 3311 and an electrostatic chuck 3312.
  • the electrostatic chuck 3312 is disposed on the pedestal electrode 3311.
  • the electrostatic chuck 3312 is used to place a substrate. At least one substrate can be placed on the electrostatic chuck 3312. In some implementations, In an example, multiple substrates can be set on the electrostatic chuck 3312, and the multiple substrates can be cleaned at the same time, thereby improving work efficiency.
  • the substrate supporting assembly 331 is also connected to a lifting and rotating mechanism 334.
  • the lifting and rotating mechanism 334 is connected to the pedestal electrode 3311.
  • the substrate supporting assembly can be realized by the lifting and rotating mechanism 334.
  • the lifting or rotating of 331 indirectly realizes the lifting or rotating of the substrate.
  • the distance between the substrate and the electrode 332 changes to adjust the intensity of the electric field between the pedestal electrode 3311 and the electrode 332, so that the plasma can better clean the substrate.
  • the lifting and rotating mechanism 334 includes a lifting mechanism that drives the pedestal electrode 3311 to rise or fall, and a rotating mechanism that drives the pedestal electrode 3311 to rotate.
  • the lifting mechanism includes a lifting motor 3341 and a guide rod 3342.
  • one end of the guide rod 3341 is arranged in the cleaning cavity 330 and is connected to the pedestal electrode 3311, and the guide rod 3342 and the pedestal electrode 3311 are sealed by a sealing ring 3343.
  • the output shaft of the lifting motor 3341 is connected to the guide rod 3342, so that the lifting motor 3341 can drive the pedestal electrode 3311 to rise or fall.
  • the rotating mechanism includes a rotating electric machine 3344, a worm 3345, and a worm gear 3346.
  • the output shaft of the rotating electric machine 3344 is connected to a worm 3345
  • the worm 3345 is connected to a worm wheel 3346.
  • the worm wheel 3346 is fixed on the guide rod 3342.
  • the worm wheel 3346 and the worm 3345 mesh for transmission.
  • the cleaning cavity 330 further includes an electrode 332.
  • the electrode 332 is disposed oppositely above the substrate support assembly 331.
  • the electrode 332 does not contact the top of the cleaning cavity 330.
  • the distance between the electrode 332 and the substrate support assembly 331 may be 2-25 cm, such as 10-20 cm, or 16-18 cm, for example.
  • the electrode 332 is also connected to an elevating and rotating mechanism 333, and the structure of the elevating and rotating mechanism 333 is the same as that of the elevating and rotating mechanism 334.
  • the elevating and rotating mechanism 333 will not be described in this embodiment.
  • the distance between the electrode 332 and the substrate changes to adjust the intensity of the electric field between the electrode 332 and the substrate, so that the plasma can uniformly clean the substrate.
  • the rotation speed of the electrode 332 and the rotation speed of the substrate support assembly 331 may be the same or there is a certain speed difference, so that the plasma cleans the substrate uniformly.
  • the substrate support assembly 331 is also connected to at least one RF bias power source 338.
  • the RF bias power source 338 is connected to the pedestal electrode 3311.
  • the radio frequency of the radio frequency bias power supply 338 can be high frequency, intermediate frequency or low frequency.
  • the high frequency can be a 13.56 MHZ radio frequency bias source;
  • the intermediate frequency can be a 2 MHZ radio frequency bias source, and
  • the low frequency can be a few 300-500 KHZ radio frequency bias source.
  • the high-frequency radio frequency can be used to etch silicon;
  • the intermediate frequency or low-frequency radio frequency can be used to etch the dielectric.
  • radio frequency bias power supplies 338 of different frequencies can be connected to the pedestal electrode 3311 at the same time to achieve simultaneous etching of silicon and dielectric.
  • the electrode 332 is also connected to at least one radio frequency power supply 337, and the radio frequency of the radio frequency power supply 337 is, for example, 13.56 MHz.
  • Both the RF power supply 337 and the RF bias power supply 338 are driven by synchronous pulses, which can be switched on and off at the same time to reduce the electronic temperature in the cleaning cavity 330, and the synchronous pulses have good control over the cleaning (etching depth) of dense areas of the substrate.
  • the cleaning chamber 330 further includes an air inlet, the air inlet is close to the electrode 332, the air inlet is connected to a gas source 335, and flows into the cleaning cavity 330 through the gas source 335
  • the conveying gas is a precursor gas used for cleaning applications, including, for example, chlorine-containing gas, fluorine-containing gas, iodine-containing gas, bromine-containing gas, nitrogen-containing gas, and/or other suitable reactive elements.
  • the RF power supply 337 and/or the RF bias power supply 338 are activated, plasma is generated near the surface of the substrate.
  • the generated plasma generally contains radicals and ions formed from a gas mixture including argon, nitrogen, hydrogen and/or other gases.
  • the generated gas ions and free radicals interact with and/or bombard the substrate surface to remove any contamination and particles on the substrate surface.
  • plasma is used to modify the surface structure of the substrate to ensure better crystal alignment between the substrate and the deposited epitaxial film layer (for example, a buffer layer containing AlN).
  • the plasma density, bias voltage and processing time can be adjusted to efficiently process the substrate surface without damaging the substrate surface.
  • a bias of about -5 volts to -1000 volts is applied to the pedestal electrode 3311 provided in the substrate support assembly 331 for about 1 second to 15 minutes, and the substrate is set on the substrate support assembly 331.
  • the frequency of the power delivered to the processing area of the cleaning chamber 330 can vary from about 10 kilohertz to 100 megahertz, and the power level can be between about 1 kilowatt and 10 kilowatts.
  • the cleaning chamber 330 further includes an air extraction port, which is close to the substrate support assembly 331, and the air extraction port is connected to a vacuum pump 336, which is used to extract gas from the cleaning chamber 330, so that The pressure of the cleaning cavity 330 enters a predetermined background vacuum range, for example, 10 -5 -10 -3 Pa.
  • the cleaning cavity 330 is mixed and fed with a precursor gas for cleaning applications to adjust the cleaning cavity
  • the pumping speed of the body 330 makes the pressure of the cleaning cavity 330 enter a predetermined working pressure range, and the predetermined working pressure range is, for example, 1Pa-20Pa.
  • the electrostatic chuck 3312 is provided with multiple independent temperature control zones, and the temperature range of each independent temperature control zone is 30°C-150°C.
  • the temperature also affects the cleaning efficiency. Therefore, the electrostatic chuck 3312 The upper temperature is controlled and adjusted, which can further improve the cleaning efficiency of the substrate and improve the product quality.
  • surface contamination such as oxides, organic materials, other contaminants
  • particles can be removed from the substrate, and the substrate surface is also ready to receive high-quality buffer layers and III-V groups.
  • the high-quality buffer layer and the III-V family layer have higher crystalline orientation in a highly crystalline structure.
  • cleaning the substrate enables the deposition of the high-quality buffer layer and the III-V family layer to have a surface roughness of less than about 1 nanometer.
  • the film can also be formed with higher uniformity on the substrate.
  • This embodiment proposes another cleaning chamber, which includes a reaction chamber 200, a bottom electrode 201, a bushing 203, a coil assembly 204, and a radio frequency bias source 206.
  • the reaction chamber 200 has a reaction space in which the generated plasma and other components can be accommodated.
  • the wall of the reaction chamber 200 may be a quartz window 205.
  • the lower electrode 201 is disposed at the bottom of the reaction chamber 200, but does not contact the bottom of the reaction chamber 200.
  • the bottom electrode 201 is used to support the substrate 202 to be etched, and the bottom electrode 201 is a conductive plate, for example, an iron plate, etc., but is not limited thereto.
  • the bottom electrode 201 can be connected to a temperature controller (not shown), the temperature controller controls the temperature of the bottom electrode 201 in the range of 0-100 °C, through the bottom electrode 201 can indirectly control the substrate 202 to reach the process The desired temperature.
  • the liner 203 is disposed in the top center area of the reaction chamber 200, that is, the liner 203 is located on the upper cavity wall of the reaction chamber 200 and does not contact the upper cavity wall.
  • the bushing 203 may be cylindrical, of course, it may also have other shapes as required.
  • the bushing 203 is a conductive plate, for example, an iron plate, etc., but is not limited thereto.
  • the bushing 203 is a rotatable bushing, and its rotation axis is perpendicular to the upper wall of the reaction chamber 200. Of course, it can also be deflected at a certain angle.
  • the position between the bushing 203 and the coil assembly 204 is not a fixed connection, and their relative position is changed by the rotation of the bushing 203 during the etching process, which will make the etching rate of each position on the substrate 202 (Cleaning rate) is more balanced.
  • the distance between the bushing 203 and the lower electrode 201 is adjustable, and the distance can be selected in the range of 5-25 cm, for example, it can be selected to be 5 cm, 10 cm, 15 cm, 20 cm or 25 cm. In this embodiment, the distance between the bushing 203 and the lower electrode 201 is 20 cm.
  • the bushing 203 is a conductive plate, for example, an iron plate, etc., but is not limited thereto.
  • the cleaning cavity further includes a coil component 204, the surface of the coil component 204 presents a convex shape, the convex coil component 204 spirally extends from the bush, and the curvature of the convex surface is adjustable.
  • the convex coil assembly is used to keep the middle coil away from the reaction cavity, which can ensure that the temperature of the electrons in the middle of the reaction cavity is lower, and the electron temperatures in the middle and both sides of the reaction cavity are more evenly distributed.
  • the material of the coil assembly 204 is one of silver, copper, aluminum, gold or platinum.
  • the coil component 204 is temporarily selected as a copper coil.
  • the bushing 203 is also connected to a radio frequency power supply (not shown in the figure).
  • the frequency of the radio frequency power supply is, for example, 13.56 MHz.
  • the lower electrode 201 is connected to at least one RF bias source 206, and only one RF bias source 206 is shown in FIG. 27.
  • the radio frequency of the radio frequency bias source 206 can be high frequency, intermediate frequency or low frequency.
  • the high frequency can be a 13.56MHz RF bias source;
  • the intermediate frequency can be a 2MHz RF bias source, and the low frequency can be a 400-600KHZ RF bias source.
  • high frequency radio frequency can be used to etch silicon; intermediate frequency or low frequency radio frequency can be used to etch dielectrics.
  • radio frequency bias sources 206 of different frequencies can be connected to the lower electrode 201 at the same time to achieve simultaneous etching of silicon and dielectrics.
  • Both the RF power supply and the RF bias source 206 are driven by synchronous pulses, which can be switched on and off at the same time to reduce the temperature of electrons in the reaction chamber 200, and the synchronous pulses have good control over the etching depth (cleaning depth) of the dense area of the substrate 202.
  • the preheating cavity 340 is connected to the conveying cavity 310.
  • the preheating cavity 340 is located on the side wall of the conveying cavity 310.
  • the substrate handling robot 311 in the transfer cavity 310 transfers the substrate into the preheating cavity 340 to preheat the substrate.
  • the preheating cavity 340 includes a shell 340a, and a bracket 341 is provided at the bottom of the shell 340a.
  • the bracket 341 may be a hollow structure, for example, and the wire is placed in the internal structure of the bracket 341. Connect the wires to the heater 342.
  • the bracket 341 may be made of high temperature resistant material, for example.
  • a heater 342 is provided in the preheating cavity 340, and the heater 342 is fixed on the bracket 341.
  • the heater 342 includes a chassis 3421 and a heating coil 3424.
  • the chassis 3421 includes a plurality of limit bars 3422, and the plurality of limit bars 3422 are divided into fan-shaped sections on the chassis 3421, and an interval cavity is arranged between two adjacent limit bars 3422, and the interval cavity can facilitate the heat dissipation of the enameled wire.
  • the multiple limit bars 3422 and the chassis 3421 can be integrally formed.
  • a plurality of baffles 3423 are also provided on the plurality of limit bars 3422, and the plurality of baffles 3423 are distributed on the plurality of limit bars in a fan shape to form a concentric circle structure.
  • a wire slot is formed between two adjacent baffles 3423, the heating coil 3424 is arranged in the wire slot, and the enameled wire is placed in the wire slot to form the heating coil 3424.
  • the enameled wire has a single-layer structure.
  • the winding positions of the enameled wire in this embodiment are not concentrated in the same spaced cavity, but can be randomly wound between adjacent wire grooves on any spaced cavity.
  • the winding method of the enameled wire is as follows: first winding the first winding, then winding to the second winding through one of the compartments, then winding to the third winding through the other compartment, winding the fourth winding in turn, Fifth circle..., the heater described in the embodiment is circled in this way.
  • the enameled wire may also have a multilayer structure.
  • an insulating film can also be wrapped around the enameled wire to prevent the enameled wire from being short-circuited due to paint drop or uneven baking, causing electric leakage, circuit board breakdown and other adverse consequences, improving the safety performance of the wire reel, and also It can ensure that the distribution of magnetic induction lines is more uniform.
  • the cross section of the heating coil 3424 is circular, and the height of the baffle 3423 is greater than the height of the heating coil 3424.
  • the heating coil 3424 may also be a cross section. It is a flat enameled wire.
  • the flat enameled wire can be vertically arranged in the wire groove. When the number and diameter of the enameled wire are fixed, the transverse width of the flat enameled wire bundle is smaller than that of the round cross section. In this way, the winding density between the coils is more dense, the magnetic induction intensity of the coil is greatly enhanced, and the heating is more uniform. If the diameter of the chassis 3421 is constant, the lateral width of the enameled wire harness becomes smaller, the number of turns of the enameled wire can be increased, and the winding method of the heating coil 3424 can be conveniently adjusted.
  • the tray 343 is also provided with a plurality of measuring points on the side close to the substrate 344, and then the plurality of measuring points are connected to a temperature measuring device, which can be set in the preheating In the cavity 340 or arranged outside the preheating cavity 340, the temperature on the substrate 344 can be measured in real time by the temperature measuring device, so that the surface temperature of the substrate 344 and its thermal uniformity can be controlled.
  • the temperature measuring device can be, for example, a thermocouple.
  • the temperature of the substrate 344 can be measured by irradiating the surface of the substrate 344 with an infrared thermometer.
  • the heating rate of the heater 334 can be 3-7°C/s, and the heater 342 can be heated to 650-1500°C.
  • 9 temperature measurement experiments were performed on the substrate 334, and the data is as follows:
  • Table 1 three temperature tests were performed in this embodiment, and the three set temperatures were 500°C, 700°C, and 760°C, respectively.
  • the lowest temperature position is at point A
  • the temperature is 482.2°C
  • the highest temperature position is at point B
  • the temperature is 511.8°C
  • the range is 29.6°C
  • the average temperature of point AI is 499.4°C
  • the temperature deviation is 5.9%.
  • the lowest temperature position is at point A
  • the temperature is 663.3°C
  • the highest temperature position is at point E
  • the temperature is 698°C
  • the range is 34.7°C
  • the average temperature of point AI is 682.8°C.
  • the temperature deviation is 5.1%.
  • the lowest temperature position is at point A
  • the temperature is 734.3°C
  • the highest temperature position is at point C
  • the temperature is 751°C
  • the range is 16.7°C
  • the average temperature of point AI is 745.0°C.
  • the temperature deviation is 2.2%.
  • an air extraction port is also provided at the bottom of the preheating cavity 340.
  • the air extraction port is connected to a vacuum pump 345, and the preheating cavity 340 is evacuated by the vacuum pump 345 to obtain a preheating cavity in a vacuum state. ⁇ 340.
  • vacuum processing is first performed, and then heating is performed to prevent oxidation of the substrate.
  • a protective gas such as nitrogen or helium, can also be passed into the preheating cavity 340 to further prevent the substrate 344 from being oxidized.
  • a heater 342 is provided in the preheating cavity 340. It should be noted that multiple heaters 342 can also be provided on the sidewall of the preheating cavity 340, or A plurality of heaters are arranged on the top of the preheating cavity 340 to ensure the uniformity of the overall temperature of the preheating cavity 340.
  • a plurality of growth cavities 350 are provided on the sidewalls of the transfer cavity 310.
  • the transfer cavity 310 The substrate loading and unloading robot 311 transfers the substrate to the growth chamber 350 for operation. Since a uniform arc-shaped magnetic field is formed in the growth chamber 350, uniform sputtering ions can be formed on the surface of the substrate, thereby forming on the substrate. Uniform film.
  • this embodiment also proposes a method for using semiconductor equipment, including:
  • S2 Perform a vacuuming process, and the stage is moved up to transport the substrate into the growth chamber to form a thin film on the substrate;
  • the manufacturing interface 313 includes a cassette and a substrate handling robot (not shown in the figure).
  • the cassette contains a substrate to be processed.
  • the substrate handling robot may include a substrate planning system to The substrate in the cassette is loaded into the transition cavity 320, specifically, the substrate is placed on the tray of the first stage.
  • step S2 after the substrate is placed on the tray of the first stage, vacuum processing is performed on the transition cavity 320, for example, the transition cavity 320 is first pumped to 1 ⁇ 10 by a dry pump. -2 Pa, and then use a turbo molecular pump to pump the transition cavity 320 to 1 ⁇ 10 -4 Pa or less than 1 ⁇ 10 -4 Pa.
  • the control rod 324 drives the first stage and the second stage to move along the preset path, for example, the control rod 324 drives the upward movement.
  • the substrate loading and unloading robot 311 in the transfer cavity 310 transfers the substrate from the transition cavity 320 to the transfer cavity 310, and then the transfer cavity 310 transfers the substrate to the cleaning cavity 330 in turn, preheating the cavity 340 and Growth cavity 350, in the growth cavity 350, one of aluminum oxide, hafnium oxide, titanium oxide, titanium nitride, aluminum nitride, aluminum gallium nitride or gallium nitride can be formed on the surface of the substrate Or multiple.
  • the substrate can be transferred between the manufacturing interface 313 and the transition cavity 320 via the slit valve, and between the transition cavity 320 and the transfer cavity 310 via the slit valve 312.
  • the movement of the substrate loading and unloading robot arm 311 may be controlled by a motor drive system (not shown), and the motor drive system may include a servo motor or a stepping motor.
  • step S3 after the substrate coating work is completed, the substrate loading and unloading robot 311 in the transfer cavity 310 transfers the substrate to the transition cavity 320, specifically, the substrate is placed on the second carrier
  • the second stage is then controlled by a lever to move in a direction opposite to the preset path.
  • the lever controls the second stage to move downward so that the second stage contacts the cooling plate and passes through the The cooling plate cools the second stage and the substrate.
  • the second stage is controlled to leave the cooling plate to a preset distance, for example, 5-10mm, and then pass into the transition cavity 320. Enter nitrogen or argon to break the vacuum process to prevent the substrate from cracking due to the introduction of a large amount of nitrogen or argon while cooling the substrate, and then remove the substrate through the substrate handling robot in the manufacturing interface.
  • Figure 34 This embodiment analyzes the aluminum nitride coating on the substrate. It can be seen from the figure that when the relative temperature is less than 0.1, the A1 area appears as loose fibrous crystallites, and the structure is inverted cone shape. Fiber, while there are a lot of gaps in the grain boundary, the film strength is poor. When the relative temperature is 0.1-0.3, the A2 zone appears as dense fibrous crystallites. In this area, the crystallites are still fine fibrous structures with a diameter of tens of nanometers. The density of internal defects in the fibers is still high, and the fiber boundaries are dense.
  • the voids between the fibers are basically disappeared, the film strength is significantly improved compared with the A1 zone, the film surface is basically straight, and the fluctuations are small.
  • the A3 zone is characterized by columnar crystals. In this area, each crystal grain grows to obtain uniform columnar crystals. The density of defects in the columnar crystals is low, and the density of grain boundaries is high, showing a crystallographic plane. feature.
  • the relative temperature is greater than 0.5, the A4 zone appears as coarse equiaxed crystals, the defect density in the equiaxed crystals is very low, the film crystallization is very complete, and the strength is high.
  • the relative temperature is low, that is, 0-0.3, after the sputtering ions are incident on the surface of the substrate, sufficient surface diffusion cannot occur, and they are continuously covered by subsequent sputtering ions, thus forming mutually parallel growth.
  • the denser fibrous structure is surrounded by relatively loose boundaries between fibers.
  • the fibrous structure has low density, low bonding strength, weak and easy to crack, and shows obvious bundle-like fiber characteristics in the cross-sectional morphology.
  • the relative stability is relatively high, that is, 0.3-0.7, after the sputtering ions are incident on the surface of the substrate, sufficient surface diffusion can occur, the migration distance of the sputtering ions increases, and the microfibrous structure forms columnar crystals due to surface diffusion.
  • the film is deposited at a uniform high temperature, the film formation speed is fast, the crystal lattice arrangement of aluminum nitride presents columnar crystal growth, the film formation has good crystallinity, and the film formation uniformity is also improved.
  • the relative temperature is the ratio of the substrate temperature to the melting temperature of the film. If the substrate temperature is lower, the relative temperature is lower, and if the substrate temperature is higher, the relative temperature is higher.
  • this embodiment analyzes the aluminum nitride film 401 formed on the substrate 400. It can be seen from the figure that the aluminum nitride film 401 has a columnar crystal structure, and the aluminum nitride film 401 has a dense interior. High and low defect density, therefore, the aluminum nitride film formed by the semiconductor device is of high quality.
  • FIG. 36 shows the rocking curves of aluminum nitride films formed under two different film forming conditions. Then, the dislocation density of the (002) crystal plane of the aluminum nitride film is studied through the rocking curves. It should be noted that the difference between the two film forming conditions is only the pretreatment of the substrate. It can be seen from Fig. 36 that the half-value width of the C1 curve is 227 arc angles, and the half-value width of the C2 curve is 259 arc angles. It can be concluded that the growth rate of the aluminum nitride film obtained without pretreatment of the substrate is fast.
  • the dislocation density is large, the growth rate of the aluminum nitride film obtained by pre-processing the substrate is slow, and the dislocation density is small. Therefore, after the substrate is pre-treated, the quality of the aluminum nitride film formed under the same conditions is improved.
  • the present invention proposes a semiconductor device, which can increase the sputtering utilization rate of the target material by forming a uniform arc-shaped magnetic field in the growth chamber, thereby effectively improving the uniformity of the coating.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteur, comprenant : une chambre de croissance; une base, disposée dans la chambre de croissance, la base permettant le placement d'un substrat; une cible, disposée dans la chambre de croissance; un aimant, disposé au niveau d'une position opposée à la cible; l'aimant comprenant une pluralité d'unités magnétiques, et l'aimant formant un champ magnétique en forme d'arc. Le dispositif à semi-conducteur selon la présente invention peut améliorer l'uniformité du revêtement de film.
PCT/CN2020/116480 2019-09-20 2020-09-21 Dispositif à semi-conducteur WO2021052497A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201921573735.8U CN211199388U (zh) 2019-09-20 2019-09-20 一种半导体设备
CN201921573735.8 2019-09-20
CN201910895152.5A CN110643962A (zh) 2019-09-20 2019-09-20 一种半导体设备
CN201910895152.5 2019-09-20

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WO2021052497A1 true WO2021052497A1 (fr) 2021-03-25

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CN211199388U (zh) * 2019-09-20 2020-08-07 深圳市晶相技术有限公司 一种半导体设备
CN211199389U (zh) * 2019-09-20 2020-08-07 深圳市晶相技术有限公司 一种半导体设备
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JPS62218562A (ja) * 1986-03-19 1987-09-25 Fujitsu Ltd スパツタリング装置
JPH0881769A (ja) * 1994-09-16 1996-03-26 Fujitsu Ltd スパッタ装置
CN1141353A (zh) * 1995-06-28 1997-01-29 大宇电子株式会社 在基底上喷镀材料用的溅射装置
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CN211199390U (zh) * 2019-09-20 2020-08-07 深圳市晶相技术有限公司 一种半导体设备

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