WO2021047008A1 - Led基板及led显示面板的制作方法 - Google Patents

Led基板及led显示面板的制作方法 Download PDF

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Publication number
WO2021047008A1
WO2021047008A1 PCT/CN2019/117054 CN2019117054W WO2021047008A1 WO 2021047008 A1 WO2021047008 A1 WO 2021047008A1 CN 2019117054 W CN2019117054 W CN 2019117054W WO 2021047008 A1 WO2021047008 A1 WO 2021047008A1
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Prior art keywords
led
substrate
end surface
thin film
film transistor
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PCT/CN2019/117054
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English (en)
French (fr)
Inventor
陈书志
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Priority to US16/625,813 priority Critical patent/US11430770B2/en
Publication of WO2021047008A1 publication Critical patent/WO2021047008A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • This application relates to a display technology, and in particular to a manufacturing method of an LED substrate and an LED display panel.
  • micro Light-emitting Diode (micro-LED) display panel is limited by the accuracy of the equipment and the size of the machine.
  • the manufacturing method firstly, the LED is placed on a temporary substrate ; Then a transfer device is used to grab the LED on the temporary substrate and the thin film transistor substrate butt and combine to form a small-size display panel, and finally the small-size display panel is spliced to form a large-size display panel.
  • the embodiments of the present application provide a manufacturing method of an LED substrate and an LED display panel, so as to solve the technical problem of low yield of large-scale micro-LED display panels produced by the existing manufacturing methods of micro-LED display panels.
  • the embodiments of the present application provide an LED substrate for manufacturing an LED display panel, wherein the LED substrate includes:
  • the substrate, the substrate is a rigid substrate
  • a plurality of LED chips including a first end surface and a second end surface, the first end surface and the second end surface are arranged opposite to each other, the first end surface is used to be fixedly connected to the thin film transistor substrate, and the second end surface is the light emitting surface surface;
  • the second end surface of the LED chip is fixedly arranged on the substrate through the glue.
  • a plurality of recessed portions are provided on the LED substrate, and each of the LED chips is fixedly arranged in the recessed portion by the glue.
  • the recessed portion is formed by recessing the base from a side facing the LED chip and a side facing away from the LED chip.
  • the LED substrate includes an auxiliary layer, the auxiliary layer is disposed on the base, and the auxiliary layer is provided with a plurality of through holes and exposes the base;
  • the through hole and the exposed base define the recessed portion.
  • the material of the auxiliary layer is a photoresist material.
  • the embodiments of the present application also provide an LED substrate for manufacturing an LED display panel, and the LED substrate includes:
  • a plurality of LED chips including a first end surface and a second end surface, the first end surface and the second end surface are arranged opposite to each other, the first end surface is used to be fixedly connected to the thin film transistor substrate, and the second end surface is the light emitting surface surface;
  • the second end surface of the LED chip is fixedly arranged on the substrate through the glue.
  • a plurality of recessed portions are provided on the LED substrate, and each of the LED chips is fixedly arranged in the recessed portion by the glue.
  • the recessed portion is formed by recessing the base from a side facing the LED chip and a side facing away from the LED chip.
  • the LED substrate includes an auxiliary layer, the auxiliary layer is disposed on the base, and the auxiliary layer is provided with a plurality of through holes and exposes the base; the through holes And the exposed base define the recessed portion.
  • the material of the auxiliary layer is a photoresist material.
  • This application also relates to a method for manufacturing an LED display panel, which includes the following steps:
  • At least one of the thin film transistor substrates is butted and assembled on the LED substrate.
  • the LED substrate includes a plurality of LED chips, the LED chip includes a first end surface and a second end surface, and the first end surface and the second end surface are similar to each other.
  • the first end surface is used for fixed connection with the thin film transistor substrate, and the second end surface is a light-emitting surface;
  • the preparation of the LED substrate includes the following steps:
  • the second end surfaces of the plurality of fixed LED chips are adhered to the glue.
  • the LED substrate includes a plurality of LED chips, the LED chip includes a first end surface and a second end surface, and the first end surface and the second end surface are similar to each other.
  • the first end surface is used for fixed connection with the thin film transistor substrate, and the second end surface is a light-emitting surface;
  • the preparation of the LED substrate includes the following steps:
  • a plurality of fixed second end surfaces of the LED chips are adhered to the glue, so that the LED chips are arranged in the recessed portion.
  • the LED substrate includes a plurality of LED chips, the LED chip includes a first end surface and a second end surface, and the first end surface and the second end surface are similar to each other.
  • the first end surface is used for fixed connection with the thin film transistor substrate, and the second end surface is a light-emitting surface;
  • the preparation of the LED substrate includes the following steps:
  • the auxiliary layer is provided with a plurality of through holes and the substrate is exposed, and the through holes and the exposed substrate define a depression;
  • a plurality of fixed second end surfaces of the LED chips are adhered to the glue, so that the LED chips are arranged in the recessed portion.
  • the docking material is anisotropic conductive adhesive film or solder
  • the step of butting and combining a plurality of the thin film transistor substrates on the LED substrate is:
  • a plurality of thin film transistors of the thin film transistor substrate are combined with the first end surface of the corresponding LED chip through a butting material.
  • the manufacturing method of the LED display panel of the present application firstly fixes the LED chip on the base to form an LED substrate, and then connects a plurality of thin film transistor substrates corresponding to the LED The LED chips on the substrate are combined to form a large-scale LED display panel directly; this solves the technical problem of low yield of large-scale micro-LED display panels produced by the existing micro-LED display panel manufacturing method.
  • FIG. 1 is a schematic diagram of the structure of the LED substrate according to the first embodiment of the application.
  • FIG. 2 is a schematic diagram of the structure of the LED substrate according to the second embodiment of the application.
  • FIG. 3 is a schematic diagram of the structure of the LED substrate according to the third embodiment of the application.
  • FIG. 5 is a schematic diagram of docking in step S4 of the manufacturing method of the LED display panel according to the first embodiment of the application;
  • FIG. 6 is a flowchart of steps for preparing an LED substrate in the method for manufacturing an LED display panel according to the first embodiment of the application;
  • FIG. 7 is a flowchart of steps for preparing an LED substrate in the method for manufacturing an LED display panel according to the second embodiment of the application;
  • FIG. 8 is a schematic diagram of docking in step S4 of the manufacturing method of the LED display panel according to the second embodiment of the application;
  • FIG. 9 is a flow chart of the steps of preparing an LED substrate in the method of manufacturing an LED display panel according to the third embodiment of the application.
  • FIG. 10 is a schematic diagram of docking in step S4 of the manufacturing method of the LED display panel according to the third embodiment of the application.
  • FIG. 1 is a schematic diagram of the structure of the LED substrate according to the first embodiment of the application.
  • the LED substrate 101 of the first embodiment is used for butting and combining with a plurality of thin film transistor substrates to form an LED display panel.
  • multiple thin film transistor substrates can be integrated into a single LED substrate 101 without re-splicing, which simplifies the process.
  • the LED substrate 101 includes a base 11, a colloid 12 and a plurality of LED chips 13.
  • the substrate 11 can be a rigid substrate, such as a glass substrate, or a flexible substrate, such as a polyimide substrate.
  • the substrate 11 is a rigid substrate, but it is not limited thereto.
  • the colloid 12 is arranged on the substrate 11.
  • the colloid 12 may be one of thermal degumming, hot melt adhesive, or ultraviolet (UV) curing glue, but is not limited thereto.
  • the plurality of LED chips 13 includes a first end surface 131 and a second end surface 132.
  • the first end surface 131 and the second end surface 132 are arranged opposite to each other.
  • the first end surface 131 is used for fixed connection with the thin film transistor substrate.
  • the second end surface 132 is a light-emitting surface.
  • the LED chip 13 is a micro-LED chip, but it is not limited to this.
  • the second end surface 132 of the LED chip 13 is fixedly arranged on the substrate 11 through the glue 12.
  • the colloid 12 is evenly covered on the base 11, and can be formed at one time by coating, which simplifies the manufacturing process of the LED substrate 101.
  • the LED chip 13 In the process of preparing the LED substrate 101, the LED chip 13 needs to be placed on the colloid 12 by passing the LED chip 13 through Surface Mounting Technology (SMT) and in accordance with the set LED chip pattern. In the process of SMT printing, individual LED chips 13 may have position deviations, which requires timely adjustment.
  • the glue 12 of the first embodiment can be made of hot melt glue or UV fixing glue to facilitate the adjustment of the LED chip 13.
  • hot melt adhesive has three characteristics, namely the initial state, the hot melt state, and the solidified state.
  • the adhesive force distributions of the three forms are 2%, 10%, and 100%, respectively.
  • the hot melt adhesive is in the initial state, and its adhesive force is the smallest, so it is easy to adjust the LED chip 13 with position deviation, and the hot melt adhesive in this state can also completely fix the LED chip 13 preliminarily. After the butt joint is fixed, heat fusion is performed to completely fix the LED chip 13 on the substrate 11.
  • UV fixing glue also includes two forms, namely the initial state with lower adhesion and the cured state with greater adhesion.
  • the cured state needs to be irradiated with ultraviolet light.
  • the glue 12 can also be other glues.
  • the colloid 12 is a colloid having at least two different adhesion states.
  • the manufacturing method of the LED substrate of the first embodiment please refer to the specific content of the steps of preparing the LED substrate in the manufacturing method of the display panel of the first embodiment of the present application, which will not be repeated here.
  • FIG. 2 is a schematic structural diagram of an LED substrate according to a second embodiment of the application.
  • the LED substrate 201 of the second embodiment of the present application includes a base 21, a colloid 22 and a plurality of LED chips 23.
  • the difference between this second embodiment and the first embodiment is:
  • a plurality of recesses 24 are provided on the LED substrate 201.
  • Each LED chip 23 is fixedly arranged in the recessed portion 24 by the glue 22.
  • the recessed portion 24 is formed by recessing the substrate 21 from the side facing the LED chip 23 and the side facing away from the LED chip 23.
  • the first end surface 231 of the LED chip 23 is higher than the top surface of the substrate 21, and the second end surface 232 of the LED chip 23 is lower than the top surface of the substrate 21.
  • the arrangement of disposing the LED chip 23 in the recessed portion 24 reduces the overall height of the LED substrate 201 and plays a role of protecting the LED chip 23.
  • the recessed portion 24 reduces the height of the gap between the LED substrate 201 and the thin film transistor substrate, which is beneficial to the thinning of the LED display panel.
  • the manufacturing method of the LED substrate of the second embodiment please refer to the specific content of the steps of preparing the LED substrate in the manufacturing method of the display panel of the second embodiment of the present application, which will not be repeated here.
  • FIG. 3 is a schematic diagram of the structure of the LED substrate according to the third embodiment of the application.
  • the LED substrate 301 of the third embodiment of the present application includes a base 31, a colloid 32 and a plurality of LED chips 33.
  • the LED substrate 301 is also provided with a plurality of recesses 34.
  • Each LED chip 33 is fixedly arranged in the recessed portion 34 by the glue 32.
  • the difference between the third embodiment and the second embodiment is:
  • the LED substrate 301 includes an auxiliary layer 35.
  • the auxiliary layer 35 is provided on the substrate 31.
  • a plurality of through holes 351 are opened on the auxiliary layer 35 and the substrate 31 is exposed.
  • the through hole 351 and the exposed base 311 define a recess 34.
  • the auxiliary layer 35 is spaced around the light-emitting side of the LED chip 33.
  • the auxiliary layer 35 functions to alleviate the problem of mutual interference of the side light emitted by the adjacent LED chips 33.
  • the material of the auxiliary layer 35 is a photoresist material.
  • the photoresist material may be one of polystyrene-based plastics, PFA (Perfluoroalkoxy) plastics, or black resin-based materials, but is not limited thereto.
  • the material of the auxiliary layer 35 is black resin-based photoresist, so that the auxiliary layer 35 can absorb the side light of the LED chip 33.
  • the material of the auxiliary layer 35 can also be doped with some light-absorbing particles in the photoresist, so that the auxiliary layer 35 has the effect of absorbing the side light of the LED chip 33. Because the photoresist is doped with light-absorbing particles, the wall of the through hole 351 is rough. Therefore, when the colloid 12 is finally cured, the stability of the colloid 12 and the auxiliary layer 35 is increased, thereby improving the overall The stability.
  • the manufacturing method of the LED substrate of the third embodiment please refer to the specific content of the steps of preparing the LED substrate in the manufacturing method of the display panel of the third embodiment of the present application, which will not be repeated here.
  • FIG. 4 is a flowchart of the manufacturing method of the LED display panel according to the first embodiment of the application
  • FIG. 5 is a schematic diagram of the docking of step S4 of the manufacturing method of the LED display panel according to the first embodiment of the application
  • Figure 6 is a flow chart of the steps of preparing the LED substrate in the method of manufacturing the LED display panel of the first embodiment of the application.
  • This application also relates to a method for manufacturing an LED display panel, which includes the following steps:
  • Step S1 preparing the LED substrate
  • Step S2 preparing at least one thin film transistor substrate
  • Step S3 setting a bonding material on the LED substrate or the thin film transistor substrate
  • Step S4 docking and combining at least one of the thin film transistor substrates on the LED substrate.
  • steps S1 and S2 are not in sequence, and the specific steps are as follows:
  • Step S1 The LED substrate 101 is prepared.
  • the LED substrate includes a plurality of LED chips 13, and the LED chip 13 includes a first end surface 131 and a second end surface 132.
  • the first end surface 131 and the second end surface 132 are arranged opposite to each other.
  • the first end surface 131 is used for fixed connection with the thin film transistor substrate 102.
  • the second end surface 12 is a light-emitting surface.
  • the preparation of the LED substrate 101 includes the following steps:
  • Step S10a Provide a base 11;
  • Step S10b forming a colloid 12 on the substrate 11;
  • Step S10c bonding the plurality of second end surfaces 132 of the LED chips 13 to the glue 12.
  • the substrate 11 may be a rigid substrate, such as a glass substrate, or a flexible substrate, such as a polyimide substrate.
  • the substrate 11 is a rigid substrate, but it is not limited thereto. Then go to step S12.
  • the colloid 12 may be one of thermal degumming, hot melt adhesive or ultraviolet (UV) curing glue, but it is not limited thereto. Then go to step S13.
  • UV ultraviolet
  • the LED chip 13 is a micro-LED chip, but it is not limited to this.
  • the LED chip 13 is placed on the glue body 12 by passing the LED chip 13 through Surface Mounting Technology (SMT) and in accordance with the set LED chip pattern.
  • SMT Surface Mounting Technology
  • individual LED chips 13 may have position deviations, which requires timely adjustment.
  • the glue 12 of the first embodiment can be made of hot melt glue or UV fixing glue to facilitate the adjustment of the LED chip 13.
  • hot melt adhesive has three characteristics, namely the initial state, the hot melt state, and the solidified state.
  • the adhesive force distributions of the three forms are 2%, 10%, and 100%, respectively.
  • the hot melt adhesive is in the initial state, and its adhesive force is the smallest, so it is easy to adjust the LED chip 13 with position deviation, and the hot melt adhesive in this state can also completely fix the LED chip 13 preliminarily. After the butt joint is fixed, heat fusion is performed to completely fix the LED chip 13 on the substrate 11.
  • UV fixing glue also includes two forms, namely the initial state with lower adhesion and the cured state with greater adhesion.
  • the cured state needs to be irradiated with ultraviolet light.
  • the glue 12 can also be other glues.
  • the colloid 12 is a colloid having at least two different adhesion states.
  • Step S2 At least one thin film transistor substrate 102 is prepared.
  • the thin film transistor substrate 102 includes a base and thin film transistors. Then go to step S3.
  • Step S3 setting a bonding material on the LED substrate 101 or the thin film transistor substrate 102.
  • the bonding material may be an anisotropic conductive film or solder bumps for electrically and fixedly connecting the first end surface 131 of the LED chip 13 and the thin film transistor substrate 102.
  • the bonding material may be provided on the LED substrate 101 or the thin film transistor substrate 102. In this embodiment, the bonding material is provided on the LED substrate 101. Then go to step S4.
  • Step S4 docking and combining a plurality of the thin film transistor substrates 102 on the LED substrate 101.
  • a pairing device is used to dock and combine the thin film transistors of the plurality of thin film transistor substrates 102 with the corresponding first end surface 131 of the LED chip 13 through a docking material.
  • the colloid 12 is thermal degumming, after the docking combination process, the substrate 11 and thermal degumming need to be peeled off, so that the LED display panel has only the thin film transistor substrate 102 and the LED chip 13.
  • FIG. 7 is a flowchart of steps for preparing an LED substrate in a method for manufacturing an LED display panel according to a second embodiment of the application
  • FIG. 8 is a diagram of the method for manufacturing an LED display panel according to a second embodiment of the application
  • the manufacturing method of the LED display panel of the second embodiment of the present application is different from the manufacturing method of the first embodiment in that step S1: preparing the LED substrate 201.
  • the LED substrate includes a plurality of LED chips 23.
  • the LED chip 23 includes a first end surface 231 and a second end surface 232.
  • the first end surface 231 and the second end surface 232 are arranged opposite to each other.
  • the first end surface 231 is used for fixed connection with the thin film transistor substrate 202.
  • the second end surface 232 is a light-emitting surface.
  • the preparation of the LED substrate 201 includes the following steps:
  • S20b Perform grooving processing on the base 21 to form a plurality of recesses 24;
  • step S20b the substrate 21 is grooved, which can be dry etching or wet etching.
  • the first end surface 231 of the LED chip 23 is higher than the top surface of the substrate 21, and the second end surface 232 of the LED chip 23 is lower than the top surface of the substrate 21.
  • the arrangement of placing the LED chip 23 in the recessed portion 24 reduces the overall height of the LED substrate 201 and protects the LED chip 23; in addition, after the LED substrate 201 and the thin film transistor substrate are butt-assembled (step S4 ), which reduces the height of the gap between the two substrates, which is conducive to the thinning of the LED display panel.
  • step S4 In order to better reflect the effect of this structure, please refer to Figure 8.
  • step S20c the colloid 22 is formed on the bottom surface of the recess 24, either by coating or by inkjet printing.
  • the colloid 22 is only formed on the bottom surface of the recess 24, which saves the material of the colloid 22.
  • the other steps of the manufacturing method of the LED display panel of the second embodiment are similar or the same as the steps of the manufacturing method of the first embodiment.
  • FIG. 9 is a flowchart of the steps of preparing an LED substrate in a method for manufacturing an LED display panel according to a third embodiment of the application
  • FIG. 8 is a flowchart of the method for manufacturing an LED display panel according to the third embodiment of the application
  • the manufacturing method of the LED display panel of the third embodiment of the present application is different from the manufacturing method of the second embodiment in that step S1: preparing the LED substrate 301.
  • the LED substrate includes a plurality of LED chips 33.
  • the LED chip 33 includes a first end surface 331 and a second end surface 332.
  • the first end surface 331 and the second end surface 332 are arranged opposite to each other.
  • the first end surface 331 is used for fixed connection with the thin film transistor substrate 302.
  • the second end surface 332 is a light-emitting surface.
  • the preparation of the LED substrate 301 includes the following steps:
  • S30c Pattern the photoresist layer to form an auxiliary layer 35.
  • a plurality of through holes 351 are opened on the auxiliary layer 35 and the substrate 31 is exposed.
  • the through holes 351 and the exposed substrate 311 are defined and formed Depression 34;
  • the LED chip 33 is disposed in the recessed portion 34 to protect the LED chip 33 and thin the LED display panel.
  • the LED chip 33 is disposed in the recessed portion 34 to protect the LED chip 33 and thin the LED display panel.
  • FIG. 10 For details, refer to FIG. 10.
  • the auxiliary layer 35 is spaced around the light-emitting side of the LED chip 33.
  • the auxiliary layer 35 functions to alleviate the problem of mutual interference of the side light emitted by the adjacent LED chips 33.
  • the material of the auxiliary layer 35 is a photoresist material.
  • the photoresist material may be one of polystyrene-based plastic, PFA plastic, or black resin-based material, but it is not limited thereto.
  • the material of the auxiliary layer 35 is black resin-based photoresist, so that the auxiliary layer 35 can absorb the side light of the LED chip 33.
  • the material of the auxiliary layer 35 can also be doped with some light-absorbing particles in the photoresist, so that the auxiliary layer 35 has the effect of absorbing the side light of the LED chip 33. Because the photoresist is doped with light-absorbing particles, the wall of the through hole 351 is rough. Therefore, when the colloid 12 is finally cured, the stability of the colloid 12 and the auxiliary layer 35 is increased, thereby improving the overall The stability.
  • the other steps of the manufacturing method of the LED display panel of the third embodiment are similar or the same as the steps of the manufacturing method of the first embodiment. Please refer to the content of the production method of the first embodiment for details.
  • the manufacturing method of the LED display panel of the present application firstly fixes the LED chip on the base to form an LED substrate, and then connects a plurality of thin film transistor substrates corresponding to the LED The LED chips on the substrate are combined to form a large-scale LED display panel directly; this solves the technical problem of low yield of large-scale micro-LED display panels produced by the existing micro-LED display panel manufacturing method.

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Abstract

本申请提供一种LED基板及LED显示面板的制作方法，LED基板包括基底、胶体和LED芯片，胶体设置在基底上；多个LED芯片包括第一端面和第二端面，第一端面和第二端面相背设置，第一端面用于与薄膜晶体管基板固定连接，第二端面为出光面；LED芯片的第二端面通过胶体固定设置在基底上。

Description

LED基板及LED显示面板的制作方法 技术领域
本申请涉及一种显示技术，特别涉及一种LED基板及LED显示面板的制作方法。
 背景技术
目前在微型发光二极管（micro Light-emitting Diode，micro-LED）显示面板的制作方法中，受限于设备精度和机台大小的影响，在制作方法中，首先，将LED摆放在暂时基板上；接着采用转移设备抓取暂时基板上的LED与薄膜晶体管基板对接组合形成小尺寸的显示面板，最后将小尺寸的显示面板进行拼接形成大尺寸的显示面板。
比如，需要完成一个80英分的显示面板，目前的作法就是使用10英分的薄膜晶体管基板和LED进行组合形成10英分的显示面板，再采用拼接的方式集成8*8=64块小型的显示面板来进行显示，但是无缝拼接技术难度高，在设计与工艺上会降低产品的良率。
 技术问题
本申请实施例提供一种LED基板及LED显示面板的制作方法，以解决现有的micro-LED显示面板的制作方法生产大型micro-LED显示面板的良率较低的技术问题。
 技术解决方案
本申请实施例提供一种LED基板，用于制作LED显示面板，其中，所述LED基板包括：
基底，所述基底为硬性基底；
胶体，设置在所述基底上；以及
多个LED芯片，包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与薄膜晶体管基板固定连接，所述第二端面为出光面；
所述LED芯片的第二端面通过所述胶体固定设置在所述基底上。
在本申请的LED基板中，所述LED基板上设置有多个凹陷部，每个所述LED芯片通过所述胶体固定设置在所述凹陷部内。
在本申请的LED基板中，所述凹陷部由所述基底自面向所述LED芯片的一面向背向所述LED芯片的一面凹陷形成。
在本申请的LED基板中，所述LED基板包括一辅助层，所述辅助层设置在所述基底上，所述辅助层上开设有多个通孔并裸露出所述基底；
所述通孔和裸露的所述基底界定形成所述凹陷部。
在本申请的LED基板中，所述辅助层的材料为光阻材料。
本申请实施例还提供一种LED基板，用于制作LED显示面板，所述LED基板包括：
基底；
胶体，设置在所述基底上；以及
多个LED芯片，包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与薄膜晶体管基板固定连接，所述第二端面为出光面；
其中，所述LED芯片的第二端面通过所述胶体固定设置在所述基底上。
在本申请的LED基板中，所述LED基板上设置有多个凹陷部，每个所述LED芯片通过所述胶体固定设置在所述凹陷部内。
在本申请的LED基板中，所述凹陷部由所述基底自面向所述LED芯片的一面向背向所述LED芯片的一面凹陷形成。
在本申请的LED基板中，所述LED基板包括一辅助层，所述辅助层设置在所述基底上，所述辅助层上开设有多个通孔并裸露出所述基底；所述通孔和裸露的所述基底界定形成所述凹陷部。
在本申请的LED基板中，所述辅助层的材料为光阻材料。
本申请还涉及一种LED显示面板的制作方法，其包括以下步骤：
制备LED基板；
制备至少一个薄膜晶体管基板；
在所述LED基板或所述薄膜晶体管基板上设置接合材料；
将至少一个所述薄膜晶体管基板对接组合到所述LED基板上。
在本申请的所述的LED显示面板的制作方法中，所述LED基板包括多个LED芯片，所述LED芯片包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与所述薄膜晶体管基板固定连接，所述第二端面为出光面；
所述制备LED基板，包括以下步骤：
提供一基底；
在所述基底上形成胶体；
将多个所述LED芯片固定的第二端面粘接在所述胶体上。
在本申请的所述的LED显示面板的制作方法中，所述LED基板包括多个LED芯片，所述LED芯片包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与所述薄膜晶体管基板固定连接，所述第二端面为出光面；
所述制备LED基板，包括以下步骤：
提供一基底；
对所述基底进行挖槽处理，形成多个凹陷部；
在所述凹陷部的底面形成胶体；
将多个所述LED芯片固定的第二端面粘接在所述胶体上，使所述LED芯片设置在所述凹陷部内。
在本申请的所述的LED显示面板的制作方法中，所述LED基板包括多个LED芯片，所述LED芯片包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与所述薄膜晶体管基板固定连接，所述第二端面为出光面；
所述制备LED基板，包括以下步骤：
提供一基底；
在所述基底上涂布一光阻胶层；
图案化所述光阻胶层形成辅助层，所述辅助层上开设有多个通孔并裸露出所述基底，所述通孔和裸露的所述基底界定形成凹陷部；
在所述凹陷部的底面形成胶体；
将多个所述LED芯片固定的第二端面粘接在所述胶体上，使所述LED芯片设置在所述凹陷部内。
在本申请的所述的LED显示面板的制作方法中，所述对接材料为异方性导电胶膜或焊锡；
其中，将多个所述薄膜晶体管基板对接组合到所述LED基板上的步骤为：
将多个所述薄膜晶体管基板的薄膜晶体管通过对接材料与对应的所述LED芯片的第一端面进行对接组合。
 有益效果
相较于现有技术的micro-LED显示面板的制作方法，本申请的LED显示面板的制作方法通过将先将LED芯片固定在基底上形成LED基板，随后将多个薄膜晶体管基板对应的与LED基板上的LED芯片进行对接组合，直接形成一大型的LED显示面板；解决了现有的micro-LED显示面板的制作方法生产大型micro-LED显示面板的良率较低的技术问题。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本申请第一实施例的LED基板的结构示意图；
图2为本申请第二实施例的LED基板的结构示意图；
图3为本申请第三实施例的LED基板的结构示意图；
图4为本申请第一实施例的LED显示面板的制作方法的流程图；
图5为本申请第一实施例的LED显示面板的制作方法的步骤S4的对接示意图；
图6为本申请第一实施例的LED显示面板的制作方法的制备LED基板的步骤流程图；
图7为本申请第二实施例的LED显示面板的制作方法的制备LED基板的步骤流程图；
图8为本申请第二实施例的LED显示面板的制作方法的步骤S4的对接示意图；
图9为本申请第三实施例的LED显示面板的制作方法的制备LED基板的步骤流程图；
图10为本申请第三实施例的LED显示面板的制作方法的步骤S4的对接示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1，图1为本申请第一实施例的LED基板的结构示意图。
本第一实施例的LED基板101用于和多个薄膜晶体管基板对接组合制作形成LED显示面板。其中，在制备LED显示面板时，多个薄膜晶体管基板完成可以集成到单一的LED基板101上，而无需进行再次的拼接，简化的了工艺。
具体的，LED基板101包括基底11、胶体12和多个LED芯片13。
根据实际的需求情况，基底11可以硬性基底，比如玻璃基底；也可以是柔性基底，比如聚酰亚胺基底。在本第一实施例中，基底11为硬性基底，但并不限于此。
胶体12设置在基底11上。胶体12可以是热脱胶、热熔胶或紫外线（UV）固化胶中的一种，但并不限于此。
多个LED芯片13包括第一端面131和第二端面132。第一端面131和第二端面132相背设置。第一端面131用于与薄膜晶体管基板固定连接。第二端面132为出光面。其中，在本第一实施例中，LED芯片13为micro-LED芯片，但并不限于此。
LED芯片13的第二端面132通过胶体12固定设置在所述基底11上。
其中，胶体12平整的覆盖在基底11上，可以采用涂布的方式一次成型，简化的LED基板101的制程。
在制备LED基板101的过程中，需要将LED芯片13通过表面组装技术（Surface Mounting Technology，SMT）且按照设定的LED芯片图案，将LED芯片13设置在胶体12上。由于在进行SMT打件的过程中，有个别LED芯片13会出现位置偏差的可能，这是便需要进行及时的调整。为了解决这个技术问题，本第一实施例的胶体12可以采用热熔胶或UV固定胶，便于对LED芯片13的调整。
下面以热熔胶为例进行说明：热熔胶具有三个形态的特性，即初始状态、热熔状态、固化状态。三种形态的粘结力分布分别为 2%、10%和100%。在SMT打件的过程中，热熔胶处于初始状态，其粘接力最小，因此便于调整具有位置偏差的LED芯片13，且该状态的热熔胶也完全可以初步的固定住LED芯片13。而当进行对接固定后，再进行热熔，彻底将LED芯片13固定在基底11上。
另外，UV固定胶也包括两种形态，即粘接力较低的初始状态和粘接力较大的固化状态。固化状态需要进行紫外光的照射。当然，胶体12还可以是其他的胶水。
因此，可选的，胶体12为具有至少两种不同粘接力状态的胶体。
本第一实施例的LED基板的制作方法，请参照下述本申请第一实施例的显示面板的制作方法中制备LED基板的步骤的具体内容，于此不再赘述。
请参照图2，图2为本申请第二实施例的LED基板的结构示意图。本申请的第二实施例的LED基板201包括基底21、胶体22和多个LED芯片23。本第二实施例与第一实施例的不同之处在于：
LED基板201上设置有多个凹陷部24。每个LED芯片23通过胶体22固定设置在凹陷部24内。
具体的，凹陷部24由基底21自面向LED芯片23的一面向背向LED芯片23的一面凹陷形成。
其中，LED芯片23的第一端面231高于基底21的顶面，LED芯片23的第二端面232低于基底21的顶面。将LED芯片23设置在凹陷部24内的设置，使LED基板201的整体高度下降，且起到保护LED芯片23的作用。另外，凹陷部24降低了LED基板201与薄膜晶体管基板之间的间隙高度，有利于LED显示面板的薄化。
本第二实施例的LED基板的制作方法，请参照下述本申请第二实施例的显示面板的制作方法中制备LED基板的步骤的具体内容，于此不再赘述。
请参照图3，图3为本申请第三实施例的LED基板的结构示意图。本申请的第三实施例的LED基板301包括基底31、胶体32和多个LED芯片33。LED基板301还上设置有多个凹陷部34。每个LED芯片33通过胶体32固定设置在凹陷部34内。本第三实施例与第二实施例的不同之处在于：
LED基板301包括一辅助层35。辅助层35设置在基底31上。辅助层35上开设有多个通孔351并裸露出基底31。通孔351和裸露的基底311界定形成凹陷部34。其中，将LED芯片33设置在凹陷部34内的作用，请参照第二实施例中对应的阐述。
由于LED芯片33的第二端面332为出光面，因此LED芯片33的出光侧的四周均间隔着辅助层35。辅助层35起到改善相邻之间的LED芯片33发出的侧向光相互干扰的问题。
辅助层35的材料为光阻材料。光阻材料可以是聚苯乙烯系塑料、PFA（Perfluoroalkoxy）塑料或者黑色树脂系材料中的一种，但并不限于此。在本第三实施例中，辅助层35的材料为黑色树脂系的光刻胶，以便辅助层35可以吸收LED芯片33的侧面光。
在一些其他的实施例中，辅助层35的材料也可以是在光刻胶中掺杂一些吸光颗粒，使得辅助层35具有吸收LED芯片33侧向光的效果。也由于在光刻胶中掺杂了吸光颗粒，使得通孔351的孔壁呈粗糙状，因此当胶体12进行最终的固化时，增加了胶体12和辅助层35的稳定性，进而提高了整体的稳定性。
本第三实施例的LED基板的制作方法，请参照下述本申请第三实施例的显示面板的制作方法中制备LED基板的步骤的具体内容，于此不再赘述。
请参照图4至图6，图4为本申请第一实施例的LED显示面板的制作方法的流程图；图5为本申请第一实施例的LED显示面板的制作方法的步骤S4的对接示意图；图6为本申请第一实施例的LED显示面板的制作方法的制备LED基板的步骤流程图。本申请还涉及一种LED显示面板的制作方法，其包括以下步骤：
步骤S1：制备LED基板；
步骤S2：制备至少一个薄膜晶体管基板；
步骤S3：在所述LED基板或所述薄膜晶体管基板上设置接合材料；
步骤S4：将至少一个所述薄膜晶体管基板对接组合到所述LED基板上。
本第一实施例的LED显示面板的制作方法中，步骤S1和S2没有先后之分，具体步骤如下：
步骤S1：制备LED基板101。
其中，LED基板包括多个LED芯片13，LED芯片13包括第一端面131和第二端面132。第一端面131和第二端面132相背设置。第一端面131用于与薄膜晶体管基板102固定连接。第二端面12为出光面。
具体的，所述制备LED基板101，包括以下步骤：
步骤S10a：提供一基底11；
步骤S10b：在所述基底11上形成胶体12；
步骤S10c：将多个所述LED芯片13固定的第二端面132粘接在所述胶体12上。
在步骤S10a中，根据实际的需求情况，基底11可以硬性基底，比如玻璃基底；也可以是柔性基底，比如聚酰亚胺基底。在本第一实施例中，基底11为硬性基底，但并不限于此。随后转入步骤S12。
在步骤S10b中，胶体12可以是热脱胶、热熔胶或紫外（UV）固化胶中的一种，但并不限于此。随后转入步骤S13。
在步骤S10c中，LED芯片13为micro-LED芯片，但并不限于此。将LED芯片13通过表面组装技术（Surface Mounting Technology，SMT）且按照设定的LED芯片图案，将LED芯片13设置在胶体12上。由于在进行SMT打件的过程中，有个别LED芯片13会出现位置偏差的可能，这是便需要进行及时的调整。为了解决这个技术问题，本第一实施例的胶体12可以采用热熔胶或UV固定胶，便于对LED芯片13的调整。
下面以热熔胶为例进行说明：热熔胶具有三个形态的特性，即初始状态、热熔状态、固化状态。三种形态的粘结力分布分别为 2%、10%和100%。在SMT打件的过程中，热熔胶处于初始状态，其粘接力最小，因此便于调整具有位置偏差的LED芯片13，且该状态的热熔胶也完全可以初步的固定住LED芯片13。而当进行对接固定后，再进行热熔，彻底将LED芯片13固定在基底11上。
另外，UV固定胶也包括两种形态，即粘接力较低的初始状态和粘接力较大的固化状态。固化状态需要进行紫外光的照射。当然，胶体12还可以是其他的胶水。
因此，可选的，胶体12为具有至少两种不同粘接力状态的胶体。
随后转入步骤S2。
步骤S2：制备至少一个薄膜晶体管基板102。薄膜晶体管基板102包括基底和薄膜晶体管。随后转入步骤S3。
步骤S3：在所述LED基板101或所述薄膜晶体管基板102上设置接合材料。其中，接合材料可以是异方性导电膜或焊锡凸点，用于将LED芯片13的第一端面131和薄膜晶体管基板102电性且固定连接。
接合材料可以设置在LED基板101，也可以设置在薄膜晶体管基板102上，在本实施例中，接合材料设置在LED基板101上。随后转入步骤S4。
步骤S4：将多个所述薄膜晶体管基板102对接组合到所述LED基板101上。请参照图5。在本步骤中，采用对组设备将多个薄膜晶体管基板102的薄膜晶体管通过对接材料与对应的所述LED芯片13的第一端面131进行对接组合。
其中，需要说明的是，当胶体12为热脱胶时，在对接组合处理后，还需对基底11和热脱胶进行剥离处理，使得LED显示面板只有薄膜晶体管基板102和LED芯片13。
这样便完成了本申请第一实施例的LED显示面板的制作过程。
请参照图7和图8，图7为本申请第二实施例的LED显示面板的制作方法的制备LED基板的步骤流程图；图8为本申请第二实施例的LED显示面板的制作方法的步骤S4的对接示意图。在本申请的第二实施例的LED显示面板的制作方法中，本第二实施例的制作方法与第一实施例的制作方法的不同之处在于，步骤S1：制备LED基板201。
在本第二实施例的LED基板的制作方法中，LED基板包括多个LED芯片23。所述LED芯片23包括第一端面231和第二端面232。第一端面231和第二端面232相背设置。第一端面231用于与薄膜晶体管基板202固定连接。第二端面232为出光面。
所述制备LED基板201，包括以下步骤：
S20a：提供一基底21；
S20b：对所述基底21进行挖槽处理，形成多个凹陷部24；
S20c：在所述凹陷部24的底面形成胶体22；
S20d：将多个所述LED芯片23固定的第二端面232粘接在所述胶体22上，使所述LED芯片23设置在所述凹陷部24内。
在步骤S20b中，对基底21进行挖槽处理，可以采用干法刻蚀，也可以采用湿法刻蚀。其中，LED芯片23的第一端面231高于基底21的顶面，LED芯片23的第二端面232低于基底21的顶面。将LED芯片23设置在凹陷部24内的设置，使LED基板201的整体高度下降，且起到保护LED芯片23的作用；另外，在将LED基板201与薄膜晶体管基板进行对接组合后（步骤S4），降低了二者之间基底的间隙高度，有利于LED显示面板的薄化。为了更好的体现这个结构效果，请参考图8。
在步骤S20c中，将胶体22形成在凹陷部24的底面，可以采用涂布的方式，也可以采用喷墨打印的方式。而胶体22仅形成在凹陷部24的底面，节省了胶体22的材料。
本第二实施例的LED显示面板的制作方法的其他步骤与第一实施例的制作方法的步骤相似或相同。具体请参照第一实施例的制作方法的内容。
请参照图9和图10，图9为本申请第三实施例的LED显示面板的制作方法的制备LED基板的步骤流程图；图8为本申请第三实施例的LED显示面板的制作方法的步骤S4的对接示意图。在本申请的第三实施例的LED显示面板的制作方法中，本第三实施例的制作方法与第二实施例的制作方法的不同之处在于，步骤S1：制备LED基板301。
在本第三实施例的LED基板的制作方法中，所述LED基板包括多个LED芯片33。所述LED芯片33包括第一端面331和第二端面332。第一端面331和第二端面332相背设置。第一端面331用于与薄膜晶体管基板302固定连接。第二端面332为出光面。
所述制备LED基板301，包括以下步骤：
S30a：提供一基底31；
S30b：在所述基底31上涂布一光阻胶层；
S30c：图案化所述光阻胶层形成辅助层35，所述辅助层35上开设有多个通孔351并裸露出所述基底31，所述通孔351和裸露的所述基底311界定形成凹陷部34；
S30d：在所述凹陷部34的底面形成胶体32；
S30e：将多个所述LED芯片33固定的第二端面332粘接在所述胶体32上，使所述LED芯片33设置在所述凹陷部34内。
具体的，一方面，将LED芯片33设置在凹陷部34内，起到保护LED芯片33和薄化LED显示面板的作用，具体参照图10。
另一方面，由于LED芯片33的第二端面332为出光面，因此LED芯片33的出光侧的四周均间隔着辅助层35。辅助层35起到改善相邻之间的LED芯片33发出的侧向光相互干扰的问题。
辅助层35的材料为光阻材料。光阻材料可以是聚苯乙烯系塑料、PFA塑料或者黑色树脂系材料中的一种，但并不限于此。在本第三实施例中，辅助层35的材料为黑色树脂系的光刻胶，以便辅助层35可以吸收LED芯片33的侧面光。
在一些其他的实施例中，辅助层35的材料也可以是在光刻胶中掺杂一些吸光颗粒，使得辅助层35具有吸收LED芯片33侧向光的效果。也由于在光刻胶中掺杂了吸光颗粒，使得通孔351的孔壁呈粗糙状，因此当胶体12进行最终的固化时，增加了胶体12和辅助层35的稳定性，进而提高了整体的稳定性。
本第三实施例的LED显示面板的制作方法的其他步骤与第一实施例的制作方法的步骤相似或相同。具体请参照第一实施例的制作方法的内容。
相较于现有技术的micro-LED显示面板的制作方法，本申请的LED显示面板的制作方法通过将先将LED芯片固定在基底上形成LED基板，随后将多个薄膜晶体管基板对应的与LED基板上的LED芯片进行对接组合，直接形成一大型的LED显示面板；解决了现有的micro-LED显示面板的制作方法生产大型micro-LED显示面板的良率较低的技术问题。
以上所述，对于本领域的普通技术人员来说，可以根据本申请的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本申请后附的权利要求的保护范围。

Claims (17)

  1. 一种LED基板，用于制作LED显示面板，其中，所述LED基板包括：
    基底，所述基底为硬性基底；
    胶体，设置在所述基底上；以及
    多个LED芯片，包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与薄膜晶体管基板固定连接，所述第二端面为出光面；
    所述LED芯片的第二端面通过所述胶体固定设置在所述基底上。
  2. 根据权利要求1所述的LED基板，其中，所述LED基板上设置有多个凹陷部，每个所述LED芯片通过所述胶体固定设置在所述凹陷部内。
  3. 根据权利要求2所述的LED基板，其中，所述凹陷部由所述基底自面向所述LED芯片的一面向背向所述LED芯片的一面凹陷形成。
  4. 根据权利要求2所述的LED基板，其中，所述LED基板包括一辅助层，所述辅助层设置在所述基底上，所述辅助层上开设有多个通孔并裸露出所述基底；
    所述通孔和裸露的所述基底界定形成所述凹陷部。
  5. 根据权利要求4所述的LED基板，其中，所述辅助层的材料为光阻材料。
  6. 一种LED基板，用于制作LED显示面板，其中，所述LED基板包括：
    基底；
    胶体，设置在所述基底上；以及
    多个LED芯片，包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与薄膜晶体管基板固定连接，所述第二端面为出光面；
    所述LED芯片的第二端面通过所述胶体固定设置在所述基底上。
  7. 根据权利要求6所述的LED基板，其中，所述LED基板上设置有多个凹陷部，每个所述LED芯片通过所述胶体固定设置在所述凹陷部内。
  8. 根据权利要求7所述的LED基板，其中，所述凹陷部由所述基底自面向所述LED芯片的一面向背向所述LED芯片的一面凹陷形成。
  9. 根据权利要求7所述的LED基板，其中，所述LED基板包括一辅助层，所述辅助层设置在所述基底上，所述辅助层上开设有多个通孔并裸露出所述基底；
    所述通孔和裸露的所述基底界定形成所述凹陷部。
  10. 根据权利要求9所述的LED基板，其中，所述辅助层的材料为光阻材料。
  11. 一种LED显示面板的制作方法，其中，包括以下步骤：
    制备LED基板；
    制备至少一个薄膜晶体管基板；
    在所述LED基板或所述薄膜晶体管基板上设置接合材料；
    将至少一个所述薄膜晶体管基板对接组合到所述LED基板上。
  12. 根据权利要求11所述的LED显示面板的制作方法，其中，所述LED基板包括多个LED芯片，所述LED芯片包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与所述薄膜晶体管基板固定连接，所述第二端面为出光面；
    所述制备LED基板，包括以下步骤：
    提供一基底；
    在所述基底上形成胶体；
    将多个所述LED芯片固定的第二端面粘接在所述胶体上。
  13. 根据权利要求11所述的LED显示面板的制作方法，其中，所述LED基板包括多个LED芯片，所述LED芯片包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与所述薄膜晶体管基板固定连接，所述第二端面为出光面；
    所述制备LED基板，包括以下步骤：
    提供一基底；
    对所述基底进行挖槽处理，形成多个凹陷部；
    在所述凹陷部的底面形成胶体；
    将多个所述LED芯片固定的第二端面粘接在所述胶体上，使所述LED芯片设置在所述凹陷部内。
  14. 根据权利要求11所述的LED显示面板的制作方法，其中，所述LED基板包括多个LED芯片，所述LED芯片包括第一端面和第二端面，所述第一端面和所述第二端面相背设置，所述第一端面用于与所述薄膜晶体管基板固定连接，所述第二端面为出光面；
    所述制备LED基板，包括以下步骤：
    提供一基底；
    在所述基底上涂布一光阻胶层；
    图案化所述光阻胶层形成辅助层，所述辅助层上开设有多个通孔并裸露出所述基底，所述通孔和裸露的所述基底界定形成凹陷部；
    在所述凹陷部的底面形成胶体；
    将多个所述LED芯片固定的第二端面粘接在所述胶体上，使所述LED芯片设置在所述凹陷部内。
  15. 根据权利要求12所述的LED显示面板的制作方法，其中，所述对接材料为异方性导电胶膜或焊锡；
    将多个所述薄膜晶体管基板对接组合到所述LED基板上的步骤为：
    将多个所述薄膜晶体管基板的薄膜晶体管通过对接材料与对应的所述LED芯片的第一端面进行对接组合。
  16. 根据权利要求13所述的LED显示面板的制作方法，其中，所述对接材料为异方性导电胶膜或焊锡；
    将多个所述薄膜晶体管基板对接组合到所述LED基板上的步骤为：
    将多个所述薄膜晶体管基板的薄膜晶体管通过对接材料与对应的所述LED芯片的第一端面进行对接组合。
  17. 根据权利要求14所述的LED显示面板的制作方法，其中，所述对接材料为异方性导电胶膜或焊锡；
    将多个所述薄膜晶体管基板对接组合到所述LED基板上的步骤为：
    将多个所述薄膜晶体管基板的薄膜晶体管通过对接材料与对应的所述LED芯片的第一端面进行对接组合。
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