WO2021042741A1 - 压电层具有插入结构的体声波谐振器、滤波器和电子设备 - Google Patents

压电层具有插入结构的体声波谐振器、滤波器和电子设备 Download PDF

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WO2021042741A1
WO2021042741A1 PCT/CN2020/086562 CN2020086562W WO2021042741A1 WO 2021042741 A1 WO2021042741 A1 WO 2021042741A1 CN 2020086562 W CN2020086562 W CN 2020086562W WO 2021042741 A1 WO2021042741 A1 WO 2021042741A1
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layer
resonator
insertion layer
resonator according
piezoelectric layer
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PCT/CN2020/086562
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English (en)
French (fr)
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杨清瑞
庞慰
张孟伦
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天津大学
诺思(天津)微系统有限责任公司
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Priority to EP20859838.3A priority Critical patent/EP4027517A4/en
Publication of WO2021042741A1 publication Critical patent/WO2021042741A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter, and an electronic device having one of the above-mentioned components.
  • the bulk acoustic wave filter has the advantages of low insertion loss, high rectangular coefficient, high power capacity, etc. Therefore, it is widely used in contemporary wireless communication systems and is an important component that determines the quality of radio frequency signals in and out of communication systems.
  • the performance of a BAW filter is determined by the BAW resonator that constitutes it. For example, the resonance frequency of the BAW resonator determines the working frequency of the filter, the effective electromechanical coupling coefficient determines the bandwidth of the filter, and the quality factor determines the insertion of the filter. loss.
  • the filter structure is constant, its quality factor, especially the quality factor (or series-parallel impedance) at the series resonance frequency and parallel resonance frequency, will significantly affect the passband insertion loss.
  • the quality factor (Qs) or series impedance (Rs) of the bulk acoustic wave resonator at the series resonance frequency is usually determined by electrode loss and material loss, while the quality factor (Qp) or parallel impedance (Rp) of the bulk acoustic wave resonator at the parallel resonance frequency Usually affected by boundary acoustic leakage.
  • the improvement space of Qs (or Rs) is limited, but the boundary structure of the resonator can be changed to effectively improve the boundary leakage of the acoustic wave, thereby significantly improving the Qp (or Rs) of the resonator. Rp).
  • FIG. 1A A schematic diagram of the cross-sectional structure of a traditional thin film bulk acoustic resonator is shown in Figure 1A, where: 100 is the substrate, 110 is the acoustic mirror, 120 is the bottom electrode, 130 is the piezoelectric layer, 140 is the top electrode, and 15 is the ring-shaped convex structure. 16 is the wing structure, h1 is the height of the gap, h2 is the thickness of the raised structure 15, and 17 is the bridge structure. d11-d14 are various sizes.
  • the composite structure is located at the edge of the effective area on the upper surface of the resonator, so that the acoustic impedance on both sides of the edge of the effective area does not match, which limits the transmission of the transverse Lamb wave and enhances the reflection and conversion of the Lamb wave. , Make Rp get a certain degree of improvement.
  • the piezoelectric layer On the connecting side of the top electrode and the bottom electrode, the piezoelectric layer has poor quality due to the rough edges of the bottom electrode.
  • the composite structure can make the resonance excitation caused by this part of the poor quality piezoelectric layer less contribute to the entire circuit, and can Improve to a certain extent And anti-static discharge ability.
  • Figure 1B is also a schematic diagram of the cross-sectional structure of an existing thin-film bulk acoustic resonator, in which: 100 is the substrate, 110 is the acoustic mirror, 120 is the bottom electrode, 130 is the piezoelectric layer, 140 is the top electrode, and 160 is the annular convex structure , H2 is the thickness of the annular convex structure.
  • d12 and d18 are various sizes.
  • the annular protrusion 160 is a single-layer structure, which may be metal, medium, or air.
  • This mode of arranging a single-layer insertion structure in the piezoelectric layer can improve the electrical properties such as Rp of the resonator to a certain extent.
  • the improvement of the energy leakage problem at the edge of the effective area of the resonator with the upload system composite structure or the single-layer insertion structure is limited, so the degree of improvement in Rp is also limited.
  • the present invention is proposed.
  • a bulk acoustic wave resonator in which a composite insertion structure is provided in the middle of the piezoelectric layer in the edge area of the effective area of the resonator, and the composite insertion structure has an insertion protrusion ( Corresponding to the first insertion layer) and insertion wing bridge (corresponding to the second insertion layer), thereby effectively increasing its Rp value.
  • the bulk acoustic wave resonator includes:
  • the area where the acoustic mirror, bottom electrode, piezoelectric layer, and top electrode overlap in the thickness direction of the substrate is the effective area of the resonator;
  • the piezoelectric layer is provided with a composite insertion structure arranged along the edge of the effective area.
  • the composite insertion structure includes a first insertion layer and a second insertion layer.
  • the first At least a part of the insertion layer overlaps the effective area, and in the top view of the resonator, the first insertion layer and the second insertion layer at least partially overlap;
  • the first insertion layer is a metal material and the second insertion layer is air or a dielectric material, or the first insertion layer is a dielectric material and the second insertion layer is air.
  • At least a part of the second insertion layer is located above the first insertion layer.
  • the second insertion layer covers and surrounds the first insertion layer or covers a part of the first insertion layer.
  • the outer end of the portion of the piezoelectric layer located below the first insertion layer is in the radial direction where the piezoelectric layer is located Outside of the outer end of the upper part of the first insertion layer.
  • the outer end of the top electrode is aligned with the outer end of the portion of the piezoelectric layer above the first insertion layer.
  • the first insertion layer in the thickness direction of the resonator, at least a part of the first insertion layer is located above the second insertion layer.
  • the first insertion layer covers and surrounds the second insertion layer or covers a part of the second insertion layer.
  • the outer end of the portion of the piezoelectric layer located below the first insertion layer is in the radial direction where the piezoelectric layer is located Outside of the outer end of the upper part of the first insertion layer.
  • the outer end of the top electrode and the outer end of the portion of the piezoelectric layer above the first insertion layer and the first insertion layer are aligned.
  • the second insertion layer, the first insertion layer, and the effective area at least partially overlap.
  • the composite insertion structure is an annular insertion structure.
  • the second insertion layer includes an insertion wing structure arranged on the non-connection side of the electrode.
  • the second interposer layer includes an interposer bridge structure arranged on the electrode connection side, and further, the outer end of the interposer bridge structure and the end of the bottom electrode are at The distance in the radial direction is in the range of 0-20um.
  • the first insertion layer extends beyond the bottom electrode, and the distance between the outer end of the first insertion layer and the end of the bottom electrode in the radial direction In the range of 0-10um, and the distance between the outer end of the insertion bridge structure and the end of the bottom electrode in the radial direction is greater than the distance between the outer end of the first insertion layer and the end of the bottom electrode in the radial direction distance.
  • the portion of the first insertion layer that overlaps the effective area in the top view of the resonator is a flat insertion portion.
  • the first insertion layer is a flat-layer protrusion.
  • the first insertion layer includes the flat insertion portion and a raised step portion forming a step with the flat insertion portion; and/or the second insertion layer includes a wing bridge step portion.
  • At least a part of the composite insertion structure is arranged in the middle position of the corresponding part of the piezoelectric layer in the thickness direction of the piezoelectric layer.
  • the radial distance between the inner end of the first insertion layer and the inner end of the second insertion layer is in the range of 0-10 um. Furthermore, the overlapping range of the first insertion layer, the second insertion layer and the effective area in the thickness direction of the resonator is 0-10 um.
  • the thickness of the first insertion layer is in the range of 50A-5000A, and/or the thickness of the second insertion layer is in the range of 50A-5000A.
  • the metal material is at least one of the following materials and combinations thereof: gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium Tungsten (TiW), aluminum (Al), titanium (Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), Iridium (Ir), germanium (Ge), copper (Cu), aluminum (Al), chromium (Cr), and arsenic-doped gold; and the dielectric material is at least one of the following materials and combinations thereof: silicon dioxide ( SiO 2 ), silicon nitride (Si 3 N 4 ), silicon carbide (SiC), aluminum nitride (AlN), alumina (Al 2 O 3 ), porous silicon, fluorinated amorphous carbon, fluoropolymer, poly
  • the first insertion layer and/or the second insertion layer bridge the boundary of the effective area.
  • the composite insertion structure is disposed between the first piezoelectric layer portion and the second piezoelectric layer portion, and the first piezoelectric layer portion and the second piezoelectric layer portion constitute the piezoelectric layer ,
  • the material constituting the first piezoelectric layer is different from the material constituting the second piezoelectric layer.
  • a filter including the above-mentioned resonator.
  • an electronic device which includes the above-mentioned resonator or the above-mentioned filter.
  • Fig. 1A is a schematic cross-sectional view of a bulk acoustic wave resonator in the prior art
  • Fig. 1B is a schematic cross-sectional view of a bulk acoustic wave resonator in the prior art
  • Fig. 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • Fig. 2A is a schematic partial cross-sectional view taken along line O-A in Fig. 2 according to an exemplary embodiment of the present invention
  • 2B is a schematic diagram schematically showing the position of the insertion protrusion in the thickness direction of the piezoelectric layer according to an exemplary embodiment of the present invention
  • Fig. 2C is a schematic partial cross-sectional view taken along line O-B in Fig. 2 according to an exemplary embodiment of the present invention
  • Fig. 2D is a schematic partial cross-sectional view taken along line O-B in Fig. 2 according to another exemplary embodiment of the present invention.
  • Fig. 2E is a schematic partial cross-sectional view taken along line O-B in Fig. 2 according to still another exemplary embodiment of the present invention.
  • Fig. 2F is a schematic partial cross-sectional view taken along line O-B in Fig. 2 according to still another exemplary embodiment of the present invention.
  • Fig. 3 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • Fig. 3A is a schematic partial cross-sectional view taken along line O-A in Fig. 3 according to an exemplary embodiment of the present invention
  • Fig. 3B is a schematic partial cross-sectional view taken along line O-B in Fig. 3 according to an exemplary embodiment of the present invention
  • Fig. 3C is a schematic partial cross-sectional view taken along the line O-B in Fig. 3 according to another exemplary embodiment of the present invention.
  • Fig. 3D is a schematic partial cross-sectional view taken along the line O-B in Fig. 3 according to another exemplary embodiment of the present invention.
  • Fig. 4A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, and its cut position is similar to the O-A line in Fig. 2;
  • Fig. 4B is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, and its cut position is similar to the O-A line in Fig. 2;
  • FIG. 5 is a comparison diagram of Rp values of the structure of FIG. 2A, the structure of FIG. 4A, and the structure of FIG. 1A;
  • Figure 6 is a comparison diagram of Rp values of a single-layer metal insertion structure, a single-layer air insertion structure, and a double-layer insertion structure (metal layer + air layer).
  • Fig. 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the bulk acoustic wave resonator includes a bottom electrode, a piezoelectric layer, a top electrode, and a composite ring-shaped insertion structure, and the top electrode can be covered with a passivation layer.
  • the composite ring-shaped insertion structure is composed of a ring-shaped insertion protrusion structure and a ring-shaped insertion wing bridge structure.
  • the ring-shaped insertion wing bridge structure appears as a ring-shaped wing structure at the non-connecting side of the bottom electrode and the top electrode.
  • the ring-shaped insertion wing bridge structure is located between the bottom electrode and the top electrode.
  • the connecting edge of the top electrode appears as a ring-shaped bridge structure.
  • the composite insertion structure is represented by a zigzag shape, but it does not mean that its actual shape must be zigzag.
  • the edge shape of the composite insertion structure can still be a shape parallel to the edge of the top electrode.
  • the insertion structure may be ring-shaped or not, and both fall within the protection scope of the present invention.
  • Fig. 2A is a schematic partial cross-sectional view taken along the line O-A in Fig. 2 according to an exemplary embodiment of the present invention.
  • the bulk acoustic wave resonator includes a substrate 100 and an acoustic mirror 110.
  • the acoustic mirror is located on the upper surface of the substrate or embedded in the interior of the substrate.
  • the acoustic mirror is composed of a cavity embedded in the substrate, but Any other acoustic mirror structure such as Bragg reflector is also applicable.
  • the bulk acoustic wave resonator also includes a bottom electrode 120, a piezoelectric layer 130, a top electrode 140, an insertion protrusion 150, and an insertion wing 160.
  • the insertion protrusion 150 and the insertion wing 160 together form a composite insertion structure.
  • the top electrode 140 may contain a blunt ⁇ The layer.
  • the bottom electrode 120 is deposited on the upper surface of the acoustic mirror and covers the acoustic mirror.
  • the edge of the bottom electrode 120 can be etched into a bevel, and the bevel is located on the outside of the acoustic mirror. In addition, it can also be stepped, vertical, or other similar structures.
  • the area where the acoustic mirror 110, the bottom electrode 120, the piezoelectric layer 130, and the top electrode 140 overlap is the effective area of the resonator.
  • the top electrode is located in the acoustic mirror, the distance between the top electrode and the edge of the acoustic mirror is d14, and the range of d14 is 0-10um.
  • the bottom electrode is located outside the acoustic mirror, and the distance between the first end of the bottom electrode and the acoustic mirror is d13, and the range of d13 is 0-10um.
  • the insertion protrusion 150 has a first end (inner end, in the present invention, for all components, the side close to the center of the effective area in the radial direction or in the lateral direction is the inner side) and a second end (outer end, In the present invention, for all components, the side far from the center of the effective area in the radial direction or the lateral direction is outside), the first end is located inside the effective area, and the second end can be aligned or extended with the edge of the effective area Out of the effective area, the extended distance is d15, and the range of d15 is 0-20um.
  • the distance between the first end of the insertion protrusion 150 and the first end of the insertion wing 160 is d11, the range of d11 is 0-10um, the height of the insertion protrusion is h1, and the range of h1 is 50A-5000A.
  • the insertion wing 160 has a first end and a second end.
  • the first end is located above 150 in the thickness direction, and is between the edge of the effective area and the first end of 150 in the horizontal direction.
  • the edges of the effective area are aligned or extend out of the effective area, and the distance between the second end of the insertion wing 160 and the second end of the insertion protrusion is d16, and the range is 0-20um.
  • the distance between the first end of the insertion wing portion 160 and the edge of the top electrode 140 is d12, and the range of d12 is 0-10um.
  • the height of the insertion wing portion 160 is h2, and the range of h2 is 50A-5000A.
  • the numerical range can be not only the end value of the given range, but also the mean value or the midpoint value of the numerical range.
  • the material of the insertion protrusion 150 is metal, such as Mo, W, Cu, Al, and the like.
  • the material inserted into the wing portion 160 is a medium (such as SiO 2 , Si 3 N 4 , ALN, doped AlN with a different doping concentration from the piezoelectric layer, etc.) or air.
  • FIG. 2B is a schematic diagram schematically showing the arrangement position of the insertion protrusion in the thickness direction of the piezoelectric layer according to an exemplary embodiment of the present invention. More specifically, in the thickness direction of the resonator, C-C and D-D divide the piezoelectric layer into three parts, E-E is the center horizontal line of the insertion protrusion, and E-E needs to be located in the middle of the contour lines shown in C-C and D-D.
  • the insertion protrusion can be arranged in this way, and the position of the overlapping part in the piezoelectric layer can also be arranged in the same way in the part where the insertion protrusion and the insertion wing overlap.
  • the present invention as long as it is arranged between the C-C line and the D-D line, it is arranged at the middle position of the piezoelectric layer.
  • the composite insertion layer (the insertion protrusion layer corresponding to the first insertion layer and the wing bridge layer corresponding to the second insertion layer) disposed in the piezoelectric layer are located in the resonator piston mode
  • the position of maximum stress (this corresponds to a special form in which the composite insertion layer is located in the middle of the piezoelectric layer), so the resulting impedance mismatch has a stronger acoustic reflection effect; on the other hand, it is set in the piezoelectric layer
  • the two insertion layers of the resonator can increase the impedance mismatch interface between the effective area and the ineffective area of the resonator, thereby generating multiple reflections of the leakage wave propagating in the lateral direction, thereby Improve the Q value of the resonator, especially the Q value of the resonator at the parallel resonance frequency (or parallel resonance impedance Rp).
  • the simulation results of the scheme of the present invention (for example, metal insertion layer + air insertion layer) compared to a single-layer raised layer (including a single-layer metal layer and a single-layer air layer) are shown in Fig. 6, and it can be seen from the figure. It can be seen intuitively that the present invention can achieve a higher Rp value than the existing single-layer insert structure.
  • Fig. 2C is a schematic partial cross-sectional view taken along the line O-B in Fig. 2 according to an exemplary embodiment of the present invention.
  • the bottom electrode extends out of the acoustic mirror, and the distance between the edge of the bottom electrode and the acoustic mirror is d19, and the range is 0-10um.
  • the insertion protrusion 150 has a first end and a second end. The first end is located inside the effective area, and the second end is aligned with the acoustic mirror. The distance between the first end and the first end of the insertion bridge 161 is d17, and the range of d17 is 0- 10um.
  • the insertion bridge 161 has a first end and a second end.
  • the first end of the insertion bridge 161 is located above the insertion protrusion 150 in the thickness direction.
  • the distance between the first end of the insertion bridge 161 and the edge of the acoustic mirror is d18, and the range of d18 is 0 -10um.
  • the second end of the insertion bridge 161 extends beyond the bottom electrode, and the distance between the second end of the insertion bridge 161 and the bottom electrode is d20, and the range of d20 is 0-20um.
  • Fig. 2D is a schematic partial cross-sectional view taken along the line O-B in Fig. 2 according to another exemplary embodiment of the present invention.
  • the embodiment shown in FIG. 2D is similar to the embodiment shown in FIG. 2C, except that the second end of the insertion protrusion 150 extends out of the effective area, and the extension value is d1.
  • Fig. 2E is a schematic partial cross-sectional view taken along the line O-B in Fig. 2 according to still another exemplary embodiment of the present invention.
  • the embodiment shown in FIG. 2E is similar to the embodiment shown in FIG. 2C, except that the second end of the inserted protrusion structure 150 extends beyond the edge of the bottom electrode, and the extension value is d24, and the range of d24 is 0-10 um. This design increases process latitude.
  • Fig. 2F is a schematic partial cross-sectional view taken along the line O-B in Fig. 2 according to still another exemplary embodiment of the present invention.
  • the embodiment shown in FIG. 2F is similar to that in FIG. 2A, except that the piezoelectric layer is composed of two different piezoelectric materials, or composed of piezoelectric materials with different doping concentrations.
  • the first piezoelectric layer 130 is pure ALN
  • the second piezoelectric layer 131 is doped ALN.
  • Fig. 3 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the bulk acoustic wave resonator includes a bottom electrode, a piezoelectric layer, a top electrode, and a composite ring-shaped insertion structure.
  • the composite ring-shaped insertion structure is composed of a ring-shaped insertion protrusion and a ring-shaped insertion wing bridge structure.
  • the ring-shaped insertion wing The bridge structure appears as a ring-shaped wing structure at the non-connected side of the bottom electrode and the top electrode, and the ring-shaped insert wing bridge structure appears as a ring-shaped bridge structure at the connecting side of the bottom electrode and the top electrode.
  • Fig. 3A is a schematic partial cross-sectional view taken along the line O-A in Fig. 3 according to an exemplary embodiment of the present invention.
  • the bulk acoustic wave resonator includes a substrate 200 and an acoustic mirror 210.
  • the acoustic mirror is located on the upper surface of the substrate or embedded in the interior of the substrate.
  • the acoustic mirror is composed of a cavity embedded in the substrate, but Any other acoustic mirror structure such as Bragg reflector is also applicable.
  • the bulk acoustic wave resonator also includes a bottom electrode 220, a piezoelectric layer 230, a top electrode 240, an insertion protrusion structure 250, and an insertion wing structure 260, wherein the insertion protrusion structure 250 and the insertion wing structure 260 together form a composite insertion structure.
  • the bottom electrode 220 is deposited on the upper surface of the acoustic mirror and covers the acoustic mirror.
  • the edge of the bottom electrode 220 can be etched into a bevel, and the bevel is located on the outside of the acoustic mirror. In addition, it can also have a stepped shape, a vertical shape, or other similar structures.
  • the area where the acoustic mirror 210, the bottom electrode 220, the piezoelectric layer 230, and the top electrode 240 overlap is the effective area of the resonator.
  • the top electrode is located in the acoustic mirror, the distance between the top electrode and the acoustic mirror is d14, and the range of d14 is 0-10um.
  • the bottom electrode is located outside the acoustic mirror, and the distance between the first end of the bottom electrode and the acoustic mirror is d13, and the range of d13 is 0-10um.
  • the insertion wing structure 250 has a first end and a second end.
  • the first end is located inside the effective area, and the second end can be aligned with the edge of the effective area or extend out of the effective area.
  • the distance between the first end of the insertion wing structure 250 and the first end of the top electrode 240 is d22, the range of d22 is 0-10um, the height of the insertion wing is h1, and the range of h1 is 50A-5000A.
  • the insertion protrusion 260 has a first end and a second end. The first end of the insertion protrusion 260 is located inside the effective area. Compared with the first end of the insertion wing structure 250, the first end of the insertion protrusion is closer to the center of the resonator.
  • the first end of the insertion protrusion 260 is the first end of the insertion wing structure 250.
  • the distance from the end is d21, and the range of d21 is 0-10um.
  • the second end of the insertion protrusion 260 may fall above the insertion wing, but exceed the outer edge of the upper electrode, and may also cover the insertion wing structure and continue to extend outward to the ineffective area.
  • the bridge wing layer (which can be an insertion bridge, an insertion wing or an insertion bridge and an insertion wing) is air or a dielectric material.
  • the insertion protrusion may be The medium material, at this time the bridge wing layer is air.
  • the insertion protrusion may be above the bridge wing layer, or the bridge wing layer may be above the insertion protrusion.
  • Fig. 3B is a schematic partial cross-sectional view taken along the line O-B in Fig. 3 according to an exemplary embodiment of the present invention.
  • the bottom electrode extends out of the acoustic mirror, and the distance between the edge of the bottom electrode and the acoustic mirror is d25, and the range is 0-10um.
  • the insertion bridge structure 250 has a first end and a second end. The first end is located inside the effective area, and the second end is located outside the bottom electrode. The distance between the second end of the insertion bridge structure 250 and the end of the bottom electrode is d26, and the range of d26 is 0. -10um.
  • the insertion protrusion 261 has a first end and a second end.
  • the first end of the insertion protrusion 261 is closer to the center of the resonator than the first end of the insertion bridge portion.
  • the first end of the insertion protrusion 261 and the first end of the insertion bridge structure The distance of d23 is d23, and the range of d23 is 0-10um; the preferred solution for the second end of the insertion protrusion 261 is to extend the second end of the insertion bridge structure outward, and the distance between the second end of the insertion protrusion 261 and the edge of the bottom electrode is The range of d27 and d27 is 0-20um.
  • 3C is a schematic partial cross-sectional view taken along the line OB in FIG. 3 according to another exemplary embodiment of the present invention, which is similar to that in FIG. 3B, except that in FIG. 3C, the wing structure 260 is inserted into the second The end does not wrap the second end of the insertion protrusion structure 250, but is aligned with the second end of the structure 250.
  • the insertion wing structure in a cross-sectional view parallel to the thickness direction of the resonator, may cover and surround the insertion protrusion structure or cover a part of the insertion protrusion structure.
  • Figure 3D shows a corresponding exemplary embodiment.
  • 3D is a schematic partial cross-sectional view taken along the line OB in FIG. 3 according to another exemplary embodiment of the present invention, which is similar to that in FIG. 3B, except that in FIG. 3D, the wing structure 260 is inserted into the second The end does not wrap the second end of the insertion protrusion structure 250, but is located inside the second end of the insertion protrusion structure 250.
  • FIG. 4A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, and its cut position is similar to the line O-A in FIG. 2.
  • the embodiment shown in FIG. 4A is similar to the embodiment shown in FIG. 2A, except that the composite insertion layer (the insertion protrusion 350 corresponding to the first insertion layer and the insertion wing corresponding to the second insertion layer) are outside the edge of the effective area.
  • the upper part of the piezoelectric layer 130 is etched away, and the first end of the top electrode and the first end of the piezoelectric layer overlap in the thickness direction.
  • the height of the insert wing structure 360 is h2 and the width is d12.
  • the first end of the insertion protrusion 350 is closer to the center of the resonator in the lateral direction relative to the insertion wing structure 360, the distance between the first end of the insertion protrusion 350 and the first end of the insertion wing structure 360 is d11, and the second end of the insertion protrusion 350 The end may be aligned with the second end of the insertion wing structure 360, or may continue to extend outward to the ineffective area.
  • the material inserted into the wing structure is a medium (such as SiO2, Si3N4, ALN, doped AlN with a different doping concentration from the piezoelectric layer, etc.) or air.
  • the material of the insertion protrusion is metal.
  • the second insertion layer in a cross-sectional view parallel to the thickness direction of the resonator, covers and surrounds the first insertion layer (insertion protrusion) or covers the Part of the first insertion layer; further, in a cross-sectional view parallel to the thickness direction of the resonator, the outer end of the portion of the piezoelectric layer under the first insertion layer is in the radial direction The piezoelectric layer is located outside the outer end of the upper portion of the first insertion layer; further, in a cross-sectional view parallel to the thickness direction of the resonator, the outer end of the top electrode is connected to the piezoelectric layer The outer ends of the part above the first insertion layer are aligned.
  • FIG. 4B is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, and its cut position is similar to the line O-A in FIG. 2.
  • the embodiment shown in FIG. 4B is similar to the embodiment shown in FIG. 4A, except that the annular insertion protrusion structure is 361 and the annular insertion wing structure is 351.
  • the height of the annular insertion wing structure 351 is h1, the lateral distance is d12, and the material can be a medium.
  • the first end of the insertion protrusion structure 361 should be closer to the center of the resonator, the distance between the first end and the first end of the annular insertion wing structure 351 is d11, and the second end should be at least connected to the insertion wing structure or continue outward
  • the preferred solution is to extend parallel to the edge of the effective area.
  • FIG. 4B in the thickness direction of the resonator, at least a part of the insertion protrusion structure corresponding to the first insertion layer is located above the insertion wing structure corresponding to the second insertion layer; further, In a cross-sectional view parallel to the thickness direction of the resonator, the first insertion layer covers and surrounds the second insertion layer or covers a part of the second insertion layer; further, in parallel to the In a cross-sectional view in the thickness direction of the resonator, the outer end of the portion of the piezoelectric layer located below the first insertion layer is located outside the portion of the piezoelectric layer located above the first insertion layer in the radial direction. The outside of the end.
  • FIG. 5 is a performance comparison diagram of the Rp value of the structure in FIG. 2A, the structure in FIG. 4A, and the structure in FIG. 1A.
  • the material to be inserted into the wing is air, the height h2 is 1000A, and the width d12 is 1um; the material of the annular protrusion 150 is Mo (molybdenum), and the height h1 of the protrusion is 1300A.
  • the parallel resistance (Rp) of the two composite insertion structures is significantly higher than that of the traditional composite structure.
  • the average value of Rp is significantly better than the case of the full piezoelectric layer.
  • the effective length d11 of the annular protrusion is 1.5um, 3um, some piezoelectric layer composite insertion structures have the highest Rp globally, and the Rp value can reach 5800 ohms.
  • the Rp of the full piezoelectric layer composite insert structure is 5250A ohms; the Rp value of the traditional composite structure is 3700 ohms, and the Rp value of some piezoelectric composite insert structures is higher than the two respectively. 56.8%, 10.5%.
  • the resonator may only include a wing structure or a bridge structure, or it may include both a bridge structure and a wing structure.
  • the constituent materials of the electrode and the insertion protrusion can be gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW) , Aluminum (Al), titanium (Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir) , Germanium (Ge), copper (Cu), aluminum (Al), chromium (Cr), arsenic doped gold and other similar metals.
  • the passivation layer is a dielectric material
  • the wing bridge structure can also be a dielectric material.
  • the dielectric material can be selected but not limited to: silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), silicon carbide (SiC), aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), porous Silicon, fluorinated amorphous carbon, fluoropolymer, parylene, polyarylether, hydrogen silsesquioxane, cross-linked polyphenylene polymer, diphenylcyclobutene, fluorinated silica, carbon doping One or more of oxide and diamond or a combination thereof.
  • the piezoelectric layer material can be aluminum nitride (AlN), doped ALN, zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz ( Quartz), potassium niobate (KNbO3) or lithium tantalate (LiTaO 3 ) and other materials, in which the doped ALN contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti) ), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy) ), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Y
  • the substrate material includes but is not limited to: single crystal silicon (Si), gallium arsenide (GaAs), sapphire, quartz, etc.
  • a bulk acoustic wave resonator including:
  • the area where the acoustic mirror, bottom electrode, piezoelectric layer, and top electrode overlap in the thickness direction of the substrate is the effective area of the resonator;
  • the piezoelectric layer is provided with a composite insertion structure arranged along the edge of the effective area.
  • the composite insertion structure includes a first insertion layer and a second insertion layer.
  • the first At least a part of the insertion layer overlaps the effective area, and in a top view of the resonator, the first insertion layer and the second insertion layer at least partially overlap;
  • the first insertion layer is a metal material and the second insertion layer is air or a dielectric material, or the first insertion layer is a dielectric material and the second insertion layer is air.
  • the second insertion layer, the first insertion layer, and the effective area at least partially overlap.
  • the first insertion layer and/or the second insertion layer bridge the boundary of the effective area.
  • a filter comprising the above-mentioned resonator.
  • An electronic device comprising the above-mentioned resonator or the above-mentioned filter.
  • the electronic equipment here includes, but is not limited to, intermediate products such as radio frequency front-ends, filter amplification modules, and terminal products such as mobile phones, WIFI, and drones.

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Abstract

本发明涉及体声波谐振器，包括：基底；声学镜；底电极；顶电极；压电层，其中：声学镜、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；所述压电层中设置有沿所述有效区域的边缘布置的复合插入结构，所述复合插入结构包括第一插入层和第二插入层，在所述谐振器的俯视图中，所述第一插入层的至少一部分与所述有效区域重叠，且在所述谐振器的俯视图中，所述第一插入层与所述第二插入层至少部分重叠；所述第一插入层为金属材料且所述第二插入层为空气或介质材料，或者所述第一插入层为介质材料且所述第二插入层为空气。本发明还涉及滤波器与电子设备。

Description

压电层具有插入结构的体声波谐振器、滤波器和电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器，一种滤波器，一种具有上述部件中的一种的电子设备。
背景技术
体声波滤波器具有低插入损耗、高矩形系数、高功率容量等优点，因此，被广泛应用在当代无线通讯系统中，是决定射频信号进出通讯系统质量的重要元器件。体声波滤波器的性能由构成它的体声波谐振器决定，如：体声波谐振器的谐振频率决定了滤波器的工作频率，有效机电耦合系数决定了滤波器的带宽，品质因数决定滤波器插入损耗。当滤波器结构一定时，其品质因数，特别是在串联谐振频率和并联谐振频率处的品质因数(或串并联阻抗)，会显著影响通带插入损耗。因此，如何提高谐振器的品质因数是高性能滤波器设计的一个重要问题。体声波谐振器串联谐振频率处的品质因数(Qs)或串联阻抗(Rs)通常由电极损耗及材料损耗决定，而体声波谐振器并联谐振频率处的品质因数(Qp)或并联阻抗(Rp)通常受边界声波泄露影响。因此，当谐振器材料、及层叠结构确定时，Qs(或Rs)的提升空间有限，但可以通过改变谐振器的边界结构来有效改善声波的边界泄露情况，从而显著提高谐振器的Qp(或Rp)。
传统的薄膜体声波谐振器剖面结构示意图如图1A所示，其中：100为基底，110为声学镜，120为底电极，130为压电层，140为顶电极，15为环形凸起结构，16为翼结构，h1为空隙的高度，h2为凸起结构15的厚度，17为桥结构。d11-d14为各种尺寸。
在图1A中，复合结构位于谐振器的上表面的有效区域边缘，使得有效区域边缘两侧的声阻抗不匹配，限制了横向兰姆波的传输，增强了对兰姆波的反射和转换能力，使得Rp得到一定程度的提高。在顶电极与底电极的连接侧，压电层因底电极边缘粗糙质量较差，复合结构能使得这部分质量较差的压电层所引起的谐振激励较小的贡献到整个电路中，能一定程度上改善
Figure PCTCN2020086562-appb-000001
及抗静电放电能力。
图1B也是现有的一种薄膜体声波谐振器剖面结构示意图，其中：100为基底，110为声学镜，120为底电极，130为压电层，140为顶电极，160为环形凸起结构，h2为环形凸起结构的厚度。d12、d18为各种尺寸。
图1B中，环形凸起160为单层结构，可为金属、介质或空气。这种在压电层中布置单层插入结构的模式，可在一定程度上改善谐振器的Rp等电学性能。然而，以上传 统复合结构或单层插入结构对谐振器有效区域边缘的能量泄露问题改善有限，因此在改善Rp的程度上也是有限的。
发明内容
为进一步提高体声波谐振器的Rp值或Qp值，提出本发明。
根据本发明的实施例的一个方面，提出了一种体声波谐振器，其在谐振器有效区域的边缘区域的压电层中间，设置一种复合插入结构，此复合插入结构具有插入凸起(对应于第一插入层)及插入翼桥(对应于第二插入层)，从而有效提高其Rp值。相应的，该体声波谐振器包括：
基底；
声学镜；
底电极；
顶电极；
压电层，
其中：
声学镜、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；
所述压电层中设置有沿所述有效区域的边缘布置的复合插入结构，所述复合插入结构包括第一插入层和第二插入层，在所述谐振器的俯视图中，所述第一插入层的至少一部分与所述有效区域重叠，且在所述谐振器的俯视图中，所述第一插入层与所述第二插入层至少部分重叠；
所述第一插入层为金属材料且所述第二插入层为空气或介质材料，或者所述第一插入层为介质材料且所述第二插入层为空气。
可选的，在谐振器的厚度方向上，所述第二插入层的至少一部分位于所述第一插入层的上方。
可选的，在平行于所述谐振器的厚度方向的一个截面图中，所述第二插入层覆盖包围所述第一插入层或覆盖所述第一插入层的一部分。进一步可选的，在平行于所述谐振器的厚度方向的一个截面图中，所述压电层处于第一插入层的下方的部分的外端在径向方向上处于所述压电层处于第一插入层的上方的部分的外端的外侧。进一步可选的，在平行于所述谐振器的厚度方向的一个截面图中，所述顶电极的外端与压电层的处于第一插入层的上方的部分的外端对齐。
可选的，在谐振器的厚度方向上，所述第一插入层的至少一部分位于所述第二插入层的上方。进一步可选的，在平行于所述谐振器的厚度方向的一个截面图中，所述第一插入层覆盖包围所述第二插入层或覆盖所述第二插入层的一部分。进一步可选的， 在平行于所述谐振器的厚度方向的一个截面图中，所述压电层处于第一插入层的下方的部分的外端在径向方向上处于所述压电层处于第一插入层的上方的部分的外端的外侧。进一步可选的，在平行于所述谐振器的厚度方向的一个截面图中，所述顶电极的外端与压电层的处于第一插入层的上方的部分的外端以及所述第一插入层的外端对齐。
可选的，在所述谐振器的俯视图中，所述第二插入层、所述第一插入层与所述有效区域三者至少部分重叠。
可选的，所述复合插入结构为环形插入结构。可选的，在所述谐振器的俯视图中，所述第二插入层包括设置于电极非连接边侧的插入翼结构。或者可选的，在所述谐振器的俯视图中，所述第二插入层包括设置于电极连接边侧的插入桥结构，进一步的，所述插入桥结构的外端与底电极的端部在径向方向上的距离在0-20um的范围内，更进一步的，所述第一插入层延伸到底电极之外，第一插入层的外端与底电极的端部在径向方向上的距离在0-10um的范围内，且所述插入桥结构的外端与底电极的端部在径向方向上的距离大于第一插入层的外端与底电极的端部在径向方向上的距离。
可选的，所述第一插入层的在谐振器的俯视图中与所述有效区域重叠的部分中的至少一部分为平坦插入部。可选的，所述第一插入层为平层凸起。可选的，所述第一插入层包括所述平坦插入部以及与所述平坦插入部形成台阶的凸起台阶部；和/或所述第二插入层包括翼桥台阶部。
可选的，所述复合插入结构的至少一部分在压电层的厚度方向上设置在压电层的对应部分的中间位置。
可选的，所述第一插入层的内端与所述第二插入层的内端在径向上的距离在0-10um的范围内。更进一步的，所述第一插入层、第二插入层与有效区域三者在谐振器的厚度方向上的重叠范围为0-10um。
可选的，所述第一插入层的厚度在50A-5000A的范围内，和/或所述第二插入层的厚度在50A-5000A的范围内。
可选的，所述金属材料为如下的至少一种材料及其组合：金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金；且所述介质材料为如下的至少一种材料及其组合：二氧化硅(SiO 2)，氮化硅(Si 3N 4)，碳化硅(SiC)，氮化铝(AlN)，氧化铝(Al 2O 3)、多孔硅、氟化非晶碳、氟聚合物、聚对二甲苯、聚芳醚、氢倍半硅氧烷、交联聚苯聚合物、双苯环丁烯、氟化二氧化硅、碳掺杂氧化物和金刚石。
可选的，所述第一插入层和/或所述第二插入层跨接有效区域的边界。
可选的，所述复合插入结构设置在第一压电层部与第二压电层部之间，所述第一压电层部与所述第二压电层部构成所述压电层，构成第一压电层部的材料与构成第二 压电层部的材料不同。
根据本发明的实施例的再一方面，提出了一种滤波器，包括上述的谐振器。
根据本发明的实施例的还一方面，提出了一种电子设备，包括上述的谐振器，或者上述的滤波器。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1A为现有技术中的体声波谐振器的示意性剖视图；
图1B为现有技术中的体声波谐振器的示意性剖视图；
图2为根据本发明的一个示例性实施例的体声波谐振器的示意性俯视图；
图2A为根据本发明的一个示例性实施例的图2中的O-A线截得的示意性局部剖视图；
图2B为根据本发明的一个示例性实施例的示意性示出插入凸起在压电层的厚度方向上的设置位置的示意图；
图2C为根据本发明的一个示例性实施例的图2中的O-B线截得的示意性局部剖视图；
图2D为根据本发明的另一个示例性实施例的图2中的O-B线截得的示意性局部剖视图；
图2E为根据本发明的再一个示例性实施例的图2中的O-B线截得的示意性局部剖视图；
图2F为根据本发明的再一个示例性实施例的图2中的O-B线截得的示意性局部剖视图；
图3为根据本发明的一个示例性实施例的体声波谐振器的示意性俯视图；
图3A为根据本发明的一个示例性实施例的图3中的O-A线截得的示意性局部剖视图；
图3B为根据本发明的一个示例性实施例的图3中的O-B线截得的示意性局部剖视图；
图3C为根据本发明的另一个示例性实施例的图3中的O-B线截得的示意性局部剖视图；
图3D为根据本发明的另一个示例性实施例的图3中的O-B线截得的示意性局部剖视图；
图4A为根据本发明的一个示例性实施例的体声波谐振器的示意性局部剖视图，其截取位置类似于图2中的O-A线；
图4B为根据本发明的一个示例性实施例的体声波谐振器的示意性局部剖视图，其截取位置类似于图2中的O-A线；
图5为图2A的结构、图4A的结构以及图1A中的结构的Rp值对比图；
图6为单层金属插入结构、单层空气插入结构以及双层插入结构(金属层+空气层)的Rp值对比图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
图2为根据本发明的一个示例性实施例的体声波谐振器的示意性俯视图。如图2所示，体声波谐振器包括底电极、压电层、顶电极、复合环形插入结构，顶电极上可覆盖钝化层。复合环形插入结构由环形插入凸起结构和环形插入翼桥结构组成，环形插入翼桥结构在底电极和顶电极的非连接边处表现为环形翼部结构，环形插入翼桥结构在底电极和顶电极的连接边处表现为环形桥部结构。
在本发明中，例如在图2中，复合插入结构以锯齿形来表示，但是并不意味着其实际形状必须为锯齿形，复合插入结构的边缘形状仍然可以为平行于顶电极边缘的形状。
需要指出的是，在本发明中，插入结构可以是环形，也可以不是环形，均在本发明的保护范围之内。
图2A为根据本发明的一个示例性实施例的图2中的O-A线截得的示意性局部剖视图。如图2A所示，体声波谐振器包括基底100和声学镜110，此声学镜位于基底的上表面或嵌于基底的内部，在图2A中声学镜为嵌入基底中的空腔所构成，但是任何其它的声学镜结构如布拉格反射器也同样适用。体声波谐振器还包括底电极120，压电层130，顶电极140，插入凸起150，插入翼160，其中插入凸起150和插入翼160共同组成复合插入结构，顶电极140上可包含钝化层。底电极120沉积在声学镜的上表面，并覆盖声学镜。可将底电极120边缘刻蚀成斜面，并且该斜面位于声学镜的外边，此外还可以为阶梯状、垂直状或是其它相似的结构。
声学镜110、底电极120、压电层130、顶电极140重叠的区域为谐振器的有效区域。顶电极位于声学镜内，顶电极与声学镜边缘的距离为d14，d14的范围为0-10um。 底电极位于声学镜外侧，底电极第一末端距离声学镜的距离为d13，d13的范围为0-10um。
插入凸起150具有第一末端(内端，在本发明中，对于所有的部件，在径向方向上或横向方向上靠近有效区域的中心的一侧为内)和第二末端(外端，在本发明中，对于所有的部件，在径向方向或者横向方向上远离有效区域的中心的一侧为外)，其第一末端位于有效区域内侧，第二末端可与有效区域边缘对齐或延伸出有效区域，其延伸出的距离为d15，d15的范围为0-20um。插入凸起150第一末端距离插入翼部160第一末端的距离为d11，d11的范围为0-10um，插入凸起的高度为h1，h1的范围为50A-5000A。
插入翼部160具有第一末端和第二末端，其第一末端在厚度方向上位于150之上，在水平方向上介于有效区域边缘和150的第一末端之间，其第二末端可与有效区域边缘对齐或延伸出有效区域，插入翼部160第二末端距离插入凸起第二末端的距离为d16，其范围为0-20um。插入翼部160第一末端距离顶电极140边缘的距离为d12，d12的范围为0-10um，插入翼部160的高度为h2，h2的范围为50A-5000A。
需要专门指出的是，在本发明中，对于数值范围，不仅可以为给出的范围端点值，而且可以为该数值范围的均值或中点值。
在该实施例中，插入凸起150的材料为金属，如Mo、W、Cu、Al等。插入翼部160的材料为介质(如：SiO 2、Si 3N 4、ALN、与压电层掺杂浓度不同的掺杂AlN等)或空气。
图2B为根据本发明的一个示例性实施例的示意性示出插入凸起在压电层的厚度方向上的设置位置的示意图。更具体的，在谐振器厚度方向上，C-C和D-D将压电层均分成3部分，E-E为插入凸起的中心水平线，E-E需位于C-C和D-D所示等高线中间。图2A中，插入凸起可以如此设置，且在插入凸起与插入翼重叠的部分，该重叠部分在压电层中的位置也可如此设置。
在本发明中，只要设置在C-C线与D-D线之间，均为设置在压电层的中间位置。
基于图2A的实施例中，一方面，在压电层中设置的复合插入层(对应于第一插入层的插入凸起层与对应于第二插入层的翼桥层)位于谐振器活塞模式应力最大的位置(这对应于复合插入层位于压电层的中间位置的一种特殊形式)，因此所产生的阻抗不匹配具有更强的声波反射效果；另一方面，在压电层中设置的两个插入层相比于单个插入层(例如单个凸起层)，可以增加谐振器有效区域至非有效区域之间的阻抗不匹配界面，从而对横向传播的泄露波产生多次反射，从而提高谐振器Q值，特别是提高谐振器在并联谐振频率处的Q值(或并联谐振阻抗Rp)。本发明的方案(例如，金属插入层+空气插入层)相比于单层凸起层(包括单层金属层，和单层空气层两种 情况)的仿真结果见图6，从图中可以直观看到，本发明相比现有单层插入结构可以实现更高的Rp值。
图2C为根据本发明的一个示例性实施例的图2中的O-B线截得的示意性局部剖视图。图2C中，底电极延伸出声学镜，底电极边缘与声学镜的距离为d19，其范围为0-10um。插入凸起150具有第一末端和第二末端，第一末端位于有效区域内侧，第二末端与声学镜对齐，第一末端距离插入桥161第一末端的距离为d17，d17的范围为0-10um。插入桥161具有第一末端和第二末端，插入桥161第一末端在厚度方向上位于插入凸起150之上，插入桥161第一末端与声学镜边缘的距离为d18，d18的范围为0-10um。插入桥161第二末端延伸出底电极之外，插入桥161第二末端与底电极的距离为d20，d20的范围为0-20um。
图2D为根据本发明的另一个示例性实施例的图2中的O-B线截得的示意性局部剖视图。图2D所示实施例与图2C所示实施例类似，不同之处在于插入凸起150的第二末端延伸出有效区域，其延伸值为d1。
图2E为根据本发明的再一个示例性实施例的图2中的O-B线截得的示意性局部剖视图。图2E所示实施例与图2C所示实施例类似，不同之处在于插入凸起结构150的第二末端延伸出底电极边缘，其延出值为d24，d24的范围为0-10um。这种设计增加了工艺宽容度。
图2F为根据本发明的再一个示例性实施例的图2中的O-B线截得的示意性局部剖视图。图2F所示的实施例与图2A中类似，不同之处在于压电层由两种不同的压电材料组成，或由掺杂浓度不同的压电材料组成。此实施例中，第一压电层130为纯的ALN，第二压电层131为掺杂ALN。
图3为根据本发明的一个示例性实施例的体声波谐振器的示意性俯视图。在图3所示的实施例中，体声波谐振器包括底电极、压电层、顶电极、复合环形插入结构，复合环形插入结构由环形插入凸起和环形插入翼桥结构组成，环形插入翼桥结构在底电极和顶电极的非连接边处表现为环形翼部结构，环形插入翼桥结构在底电极和顶电极的连接边处表现为环形桥部结构。
图3A为根据本发明的一个示例性实施例的图3中的O-A线截得的示意性局部剖视图。如图3A所示，体声波谐振器包括基底200和声学镜210，此声学镜位于基底的上表面或嵌于基底的内部，在图3A中声学镜为嵌入基底中的空腔所构成，但是任何其它的声学镜结构如布拉格反射器也同样适用。体声波谐振器还包括底电极220，压电层230，顶电极240，插入凸起结构250，插入翼结构260,其中插入凸起结构250和插入翼结构260共同组成复合插入结构。底电极220沉积在声学镜的上表面，并覆盖声学镜。可将底电极220边缘刻蚀成斜面，并且该斜面位于声学镜的外边，此外还可以为阶梯状、垂直状或是其它相似的结构。
声学镜210、底电极220、压电层230、顶电极240重叠的区域为谐振器的有效区域。顶电极位于声学镜内，顶电极距离声学镜的距离为d14，d14的范围为0-10um。底电极位于声学镜外侧，底电极第一末端距离声学镜的距离为d13，d13的范围为0-10um。插入翼结构250具有第一末端和第二末端，其第一末端位于有效区域内侧，第二末端可与有效区域边缘对齐或延伸出有效区域。插入翼结构250第一末端与顶电极240第一末端距离为d22，d22的范围为0-10um，插入翼部的高度为h1，h1的范围为50A-5000A。插入凸起260具有第一末端和第二末端。插入凸起260第一末端位于有效区域内侧，相较于插入翼结构250第一末端，插入凸起的第一末端更靠近谐振器中心，插入凸起260第一末端与插入翼结构250第一末端的距离为d21，d21的范围为0-10um。插入凸起260第二末端可以落在插入翼部上方，但超过上电极外边缘，也可以覆盖插入翼结构，并向外继续延伸至无效区域。
在本发明中，插入凸起(层)为金属材料时桥翼层(可以是插入桥，插入翼或者是插入桥和插入翼)为空气或者介质材料，在本发明中，插入凸起可以为介质材料，此时桥翼层为空气。
此外，在本发明中，插入凸起可以在桥翼层的上方，也可以是桥翼层在插入凸起的上方。
图3B为根据本发明的一个示例性实施例的图3中的O-B线截得的示意性局部剖视图。在图3B中，底电极延伸出声学镜，底电极边缘与声学镜的距离为d25，范围为0-10um。插入桥结构250具有第一末端和第二末端，第一末端位于有效区域内侧，第二末端位于底电极外侧，插入桥结构250第二末端与底电极末端的距离为d26，d26的范围为0-10um。插入凸起261具有第一末端和第二末端，插入凸起261第一末端相比于插入桥部第一末端，更加靠近谐振器中心，插入凸起261第一末端与插入桥结构第一末端的距离为d23，d23的范围为0-10um；插入凸起261第二末端的优选方案为向外延伸出插入桥结构第二末端，插入凸起261第二末端与底电极的边缘的距离为d27，d27的范围为0-20um。
图3C为根据本发明的另一个示例性实施例的图3中的O-B线截得的示意性局部剖视图，其与图3B中类似，不同之处在于在图3C中，插入翼结构260第二末端未包裹插入凸起结构250的第二末端，而是与结构250第二末端对齐。
在本发明中，在平行于所述谐振器的厚度方向的一个截面图中，插入翼结构可以覆盖包围插入凸起结构或覆盖插入凸起结构的一部分。图3D示出了相应的示例性实施例。图3D为根据本发明的另一个示例性实施例的图3中的O-B线截得的示意性局部剖视图，其与图3B中类似，不同之处在于在图3D中，插入翼结构260第二末端未包裹插入凸起结构250的第二末端，而是位于插入凸起结构250第二末端内侧。
图4A为根据本发明的一个示例性实施例的体声波谐振器的示意性局部剖视图， 其截取位置类似于图2中的O-A线。图4A所示实施例与图2A所示实施例类似，不同之处在于在有效区域边缘外侧，复合插入层(对应于第一插入层的插入凸起350与对应于第二插入层的插入翼结构)上方的部分压电层130被刻蚀掉，顶电极的第一末端与压电层的第一末端在厚度方向上重合。
在图4A中，插入翼结构360的高度为h2，宽度为d12。插入凸起350的第一末端相对于插入翼结构360在横向上更靠近谐振器中心，插入凸起350第一末端与插入翼结构360第一末端的距离为d11，插入凸起350的第二末端可与插入翼结构360第二末端对齐，也可继续向外延伸至无效区域。
在示例性实施例中，插入翼结构的材料为介质(如：SiO2、Si3N4、ALN、与压电层掺杂浓度不同的掺杂AlN等)或空气。插入凸起的材料为金属。
换言之：在图4A中，在平行于所述谐振器的厚度方向的一个截面图中，所述第二插入层(插入翼结构)覆盖包围所述第一插入层(插入凸起)或覆盖所述第一插入层的一部分；进一步的，在平行于所述谐振器的厚度方向的一个截面图中，所述压电层处于第一插入层的下方的部分的外端在径向方向上处于所述压电层处于第一插入层的上方的部分的外端的外侧；更进一步的，在平行于所述谐振器的厚度方向的一个截面图中，所述顶电极的外端与压电层的处于第一插入层的上方的部分的外端对齐。
图4B为根据本发明的一个示例性实施例的体声波谐振器的示意性局部剖视图，其截取位置类似于图2中的O-A线。图4B所示实施例与图4A所示实施例类似，不同之处在于环形插入凸起结构为361、环形插入翼结构为351。环形插入翼结构351的高度为h1，横向距离为d12，材料可为介质。插入凸起结构361的第一末端应更靠近谐振器中心，其第一末端与环形插入翼结构部351第一末端的距离为d11，其第二末端应至少与插入翼结构相连或继续向外延伸，其优选方案为与有效区域边缘平行。
换言之，在图4B中：在谐振器的厚度方向上，所述对应于第一插入层的插入凸起结构的至少一部分位于所述对应于第二插入层的插入翼结构的上方；进一步的，在平行于所述谐振器的厚度方向的一个截面图中，所述第一插入层覆盖包围所述第二插入层或覆盖所述第二插入层的一部分；更进一步的，在平行于所述谐振器的厚度方向的一个截面图中，所述压电层处于第一插入层的下方的部分的外端在径向方向上处于所述压电层处于第一插入层的上方的部分的外端的外侧。
图5为图2A的结构、图4A的结构以及图1A中的结构的Rp值的性能对比图。拟定插入翼的材料为空气，其高度h2为1000A，其宽度d12为1um；环形凸起150的材料为Mo(钼)，凸起的高度h1为1300A。如图5所示，当环形凸起的有效长度d11从0.5um增加至3um时，两种复合插入结构的并联电阻(Rp)均明显高于传统复合结构。对于两种复合插入结构，压电层被部分刻蚀的实施例，其Rp平均值要明显优于全压电层情况。当环形凸起的有效长度d11为1.5um，3um时，部分压电层复合插入结构 具有全局最高的Rp，其Rp值可达5800欧姆。当环形凸起的有效长度d11为1.5um，全压电层复合插入结构的Rp则为5250A欧姆；传统复合结构的Rp值为3700欧姆，部分压电复合插入结构的Rp值分别比二者高56.8％、10.5％。
在以上的实施例中，当第二插入层设置为翼，则为翼结构；而当第二插入层设置为桥，则为桥结构。基于实际情况，谐振器可以仅包括翼结构或桥结构，也可以同时包括桥结构和翼结构。
下面示例性的简单说明根据本发明的体声波谐振器的部件的材料。
在本发明中，电极及插入凸起的组成材料可以是金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金等类似金属形成。
在本发明中，钝化层为介电材料，翼桥结构也可为介电材料。介电材料可选择但不限于：二氧化硅(SiO 2)，氮化硅(Si 3N 4)，碳化硅(SiC)，氮化铝(AlN)，氧化铝(Al 2O 3)、多孔硅、氟化非晶碳、氟聚合物、聚对二甲苯、聚芳醚、氢倍半硅氧烷、交联聚苯聚合物、双苯环丁烯、氟化二氧化硅、碳掺杂氧化物和金刚石中的一种或多种或是它们的组合。
在本发明中，压电层材料可以为氮化铝(AlN)、掺杂氮化铝(doped ALN)氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO3)、石英(Quartz)、铌酸钾(KNbO3)或钽酸锂(LiTaO 3)等材料，其中掺杂ALN至少含一种稀土元素，如钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。
在本发明中，基底材料包括但不限于：单晶硅(Si)，砷化镓(GaAs)，蓝宝石，石英等。
基于以上实施例及其附图，本发明提出了如下技术方案：
1、一种体声波谐振器，包括：
基底；
声学镜；
底电极；
顶电极；
压电层，
其中：
声学镜、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；
所述压电层中设置有沿所述有效区域的边缘布置的复合插入结构，所述复合插入结构包括第一插入层和第二插入层，在所述谐振器的俯视图中，所述第一插入层的至少一部分与所述有效区域重叠，且在所述谐振器的俯视图中，所述第一插入层与所述第二插入层至少部分重叠；
所述第一插入层为金属材料且所述第二插入层为空气或介质材料，或者所述第一插入层为介质材料且所述第二插入层为空气。
可选的，在所述谐振器的俯视图中，所述第二插入层、所述第一插入层与所述有效区域三者至少部分重叠。
可选的，所述第一插入层和/或所述第二插入层跨接有效区域的边界。
2、一种滤波器，包括上述的谐振器。
3、一种电子设备，包括上述的谐振器，或者上述的滤波器。需要指出的是，这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (27)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极；
    顶电极；
    压电层，
    其中：
    声学镜、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；
    所述压电层中设置有沿所述有效区域的边缘布置的复合插入结构，所述复合插入结构包括第一插入层和第二插入层，在所述谐振器的俯视图中，所述第一插入层的至少一部分与所述有效区域重叠，且在所述谐振器的俯视图中，所述第一插入层与所述第二插入层至少部分重叠；
    所述第一插入层为金属材料且所述第二插入层为空气或介质材料，或者所述第一插入层为介质材料且所述第二插入层为空气。
  2. 根据权利要求1所述的谐振器，其中：
    在谐振器的厚度方向上，所述第二插入层的至少一部分位于所述第一插入层的上方。
  3. 根据权利要求2所述的谐振器，其中：
    在平行于所述谐振器的厚度方向的一个截面图中，所述第二插入层覆盖包围所述第一插入层或覆盖所述第一插入层的一部分。
  4. 根据权利要求3所述的谐振器，其中：
    在平行于所述谐振器的厚度方向的一个截面图中，所述压电层处于第一插入层的下方的部分的外端在径向方向上处于所述压电层处于第一插入层的上方的部分的外端的外侧。
  5. 根据权利要求4所述的谐振器，其中：
    在平行于所述谐振器的厚度方向的一个截面图中，所述顶电极的外端与压电层的处于第一插入层的上方的部分的外端对齐。
  6. 根据权利要求1所述的谐振器，其中：
    在谐振器的厚度方向上，所述第一插入层的至少一部分位于所述第二插入层的上方。
  7. 根据权利要求6所述的谐振器，其中：
    在平行于所述谐振器的厚度方向的一个截面图中，所述第一插入层覆盖包围所述第二插入层或覆盖所述第二插入层的一部分。
  8. 根据权利要求7所述的谐振器，其中：
    在平行于所述谐振器的厚度方向的一个截面图中，所述压电层处于第一插入层的下方的部分的外端在径向方向上处于所述压电层处于第一插入层的上方的部分的外端的外侧。
  9. 根据权利要求8所述的谐振器，其中：
    在平行于所述谐振器的厚度方向的一个截面图中，所述顶电极的外端与压电层的处于第一插入层的上方的部分的外端以及所述第一插入层的外端对齐。
  10. 根据权利要求1所述的谐振器，其中：
    在所述谐振器的俯视图中，所述第二插入层、所述第一插入层与所述有效区域三者至少部分重叠。
  11. 根据权利要求1所述的谐振器，其中：
    所述复合插入结构为环形插入结构。
  12. 根据权利要求11所述的谐振器，其中：
    在所述谐振器的俯视图中，所述第二插入层包括设置于电极非连接边侧的插入翼结构。
  13. 根据权利要求11所述的谐振器，其中：
    在所述谐振器的俯视图中，所述第二插入层包括设置于电极连接边侧的插入桥结构。
  14. 根据权利要求13所述的谐振器，其中：
    所述插入桥结构的外端与底电极的端部在径向方向上的距离在0-20um的范围内。
  15. 根据权利要求14所述的谐振器，其中：
    所述第一插入层延伸到底电极之外，第一插入层的外端与底电极的端部在径向方向上的距离在0-10um的范围内，且所述插入桥结构的外端与底电极的端部在径向方向上的距离大于第一插入层的外端与底电极的端部在径向方向上的距离。
  16. 根据权利要求1所述的谐振器，其中：
    所述第一插入层的在谐振器的俯视图中与所述有效区域重叠的部分中的至少一部分为平坦插入部。
  17. 根据权利要求16所述的谐振器，其中：
    所述第一插入层为平层凸起。
  18. 根据权利要求16所述的谐振器，其中：
    所述第一插入层包括所述平坦插入部以及与所述平坦插入部形成台阶的凸起台阶部；和/或
    所述第二插入层包括翼桥台阶部。
  19. 根据权利要求1所述的谐振器，其中：
    所述复合插入结构的至少一部分在压电层的厚度方向上设置在压电层的对应部分的中间位置。
  20. 根据权利要求1-19中任一项所述的谐振器，其中：
    所述第一插入层的内端与所述第二插入层的内端在径向上的距离在0-10um的范围内。
  21. 根据权利要求20所述的谐振器，其中：
    所述第一插入层、第二插入层与有效区域三者在谐振器的厚度方向上的重叠范围为0-10um。
  22. 根据权利要求1-20中任一项所述的谐振器，其中：
    所述第一插入层的厚度在50A-5000A的范围内，和/或所述第二插入层的厚度在50A-5000A的范围内。
  23. 根据权利要求1-22中任一项所述的谐振器，其中：
    所述金属材料为如下的至少一种材料及其组合：金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金；且
    所述介质材料为如下的至少一种材料及其组合：二氧化硅(SiO 2)，氮化硅(Si 3N 4)，碳化硅(SiC)，氮化铝(AlN)，氧化铝(Al 2O 3)、多孔硅、氟化非晶碳、氟聚合物、聚对二甲苯、聚芳醚、氢倍半硅氧烷、交联聚苯聚合物、双苯环丁烯、氟化二氧化硅、碳掺杂氧化物和金刚石。
  24. 根据权利要求1所述的谐振器，其中：
    所述第一插入层和/或所述第二插入层跨接有效区域的边界。
  25. 根据权利要求1所述的谐振器，其中：
    所述复合插入结构设置在第一压电层部与第二压电层部之间，所述第一压电层部与所述第二压电层部构成所述压电层，构成第一压电层部的材料与构成第二压电层部的材料不同。
  26. 一种滤波器，包括：
    根据权利要求1-25中任一项所述的体声波谐振器。
  27. 一种电子设备，包括根据权利要求1-25中任一项所述的体声波谐振器，或者根据权利要求27所述的滤波器。
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