WO2022228384A1 - 体声波谐振器、滤波器及电子设备 - Google Patents

体声波谐振器、滤波器及电子设备 Download PDF

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Publication number
WO2022228384A1
WO2022228384A1 PCT/CN2022/088981 CN2022088981W WO2022228384A1 WO 2022228384 A1 WO2022228384 A1 WO 2022228384A1 CN 2022088981 W CN2022088981 W CN 2022088981W WO 2022228384 A1 WO2022228384 A1 WO 2022228384A1
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electrode
bottom electrode
resonator
bridge
connection end
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PCT/CN2022/088981
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English (en)
French (fr)
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张孟伦
庞慰
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诺思(天津)微系统有限责任公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator

Definitions

  • Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter including the bulk acoustic wave resonator, and an electronic device including the bulk acoustic wave resonator or the filter.
  • FBAR thin film bulk acoustic resonator
  • the structural main body of the thin film bulk acoustic wave resonator is a "sandwich" structure composed of an electrode-piezoelectric film-electrode, that is, a piezoelectric material is sandwiched between two metal electrode layers.
  • the FBAR uses the inverse piezoelectric effect to convert the input electrical signal into mechanical resonance, and then uses the piezoelectric effect to convert the mechanical resonance into an electrical signal output.
  • the piezoelectric layer of the traditional thin film bulk acoustic wave resonator is prepared by a semiconductor thin film deposition process (such as sputtering process).
  • a semiconductor thin film deposition process such as sputtering process.
  • the piezoelectric layer structure formed by deposition is not in a straight state, resulting in an unoptimized overall electrical performance of the resonator. Therefore, conventional thin-film bulk acoustic wave resonators cannot achieve more optimized electrical performance.
  • the present invention is proposed to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.
  • a bulk acoustic wave resonator comprising: a substrate, a piezoelectric layer, an acoustic mirror, a bottom electrode, a top electrode, and a single crystal piezoelectric element disposed between the bottom electrode and the top electrode Floor.
  • a support structure is provided between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are generally arranged in parallel.
  • the bottom electrode is provided with a first acoustic interference structure.
  • a filter including the aforementioned bulk acoustic wave resonator.
  • an electronic device including the aforementioned bulk acoustic wave resonator or filter.
  • Substrate, optional materials are single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.
  • the acoustic mirror can be a cavity, or a Bragg reflection layer and other equivalent forms. In the embodiment shown in the present invention, a cavity is used.
  • the support layer, the material can be copper, gold or the composite of the above metals or their alloys, etc., and can also be dielectric materials such as SiN, SiO 2 and the like.
  • the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite of the above metals or their alloys.
  • Lithium oxide and other materials can also contain rare earth element doped materials with a certain atomic ratio of the above materials, such as doped aluminum nitride, and doped aluminum nitride contains at least one rare earth element, such as scandium (Sc), yttrium ( Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium ( Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (T
  • Top electrode the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite of the above metals or their alloys.
  • the top and bottom electrode materials are generally the same, but can also be different.
  • the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite of the above metals or their alloys, etc., or dielectric materials or piezoelectric materials.
  • molybdenum ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite of the above metals or their alloys, etc.
  • dielectric materials or piezoelectric materials Such as silicon dioxide, silicon nitride, aluminum nitride, etc.
  • Insertion material which is different from the material of the bottom electrode, and its material may be: oxide, nitride, aluminum nitride, silicon nitride, silicon oxide, etc. of the electrode material.
  • Acoustic interference structure which can be a cantilever structure, a bridge structure, a concave structure, a convex structure, and the like.
  • FIG. 1 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the BAW resonator mainly includes: a substrate 10 , a support layer 25 , an acoustic mirror 20 , a bottom electrode 30 , a piezoelectric layer 40 and a top electrode 50 .
  • the support layer 25 is disposed on the substrate 10 for supporting the resonant structure of the BAW resonator.
  • a cavity is formed in the support layer 25 , which cavity constitutes the acoustic mirror 20 .
  • the bottom electrode 30 is disposed on the bottom surface of the piezoelectric layer 40
  • the top electrode 50 is disposed on the upper surface of the piezoelectric layer 40 such that the piezoelectric layer 40 is sandwiched between the bottom electrode 30 and the top electrode 50 .
  • the support layer 25 ie, support structure
  • the piezoelectric layer 40 is arranged substantially parallel to the substrate 10 .
  • the piezoelectric layer 40 is a flat single crystal piezoelectric layer.
  • the piezoelectric layer 40 adopts a flat single crystal thin film structure, so that the piezoelectric layer 40 is in a horizontal state on the entire BAW resonator level. Therefore, the BAW resonator can eliminate the deformation caused by the bending of the piezoelectric layer.
  • the parasitic mode enhances the effect, so the parasitic mode is suppressed.
  • a cantilever structure is formed at the non-electrode connection end of the bottom electrode 30 , and the cantilever structure extends outward.
  • the protruding structure 60 is covered on the surface of the suspension structure of the bottom electrode 30 facing the piezoelectric layer 40 .
  • the cantilever structure of the bottom electrode 30 and the protruding structure 60 on the bottom electrode 30 are located inside the boundary of the acoustic mirror 20 in the horizontal direction.
  • a cantilever structure is also formed on the top electrode 50, and a protruding structure 60 is also provided on the surface of the top electrode 50 facing the piezoelectric layer 40 of the cantilever structure.
  • the present invention is not limited to the illustrated embodiment.
  • the protruding structure 60 may also cover the surface of the suspension structure of the bottom electrode 30 that faces away from the piezoelectric layer 40, and these modifications should also be applied. into the protection scope of the present invention.
  • the cantilevered structures and the raised structures 60 provided on the bottom electrode 30 and the top electrode 50 constitute an acoustic interference structure for optimizing the electrical performance of the BAW resonator.
  • the impedance (Rp) or the quality factor (Qp) at the parallel resonant frequency of the BAW can be improved by properly arranging these acoustic interference structures.
  • the top electrode 50 and the bottom electrode 30 are symmetrically arranged on the upper and lower sides of the piezoelectric layer 40 .
  • the protruding structures 60 on the top electrode 50 and the protruding structures 60 on the bottom electrode 30 are also symmetrically disposed on the upper and lower sides of the piezoelectric layer 40 .
  • the symmetry here is the part of the acoustic interference structure on the upper and lower sides of the non-electrode connecting end of the electrode, which is symmetrical about the piezoelectric layer perpendicular to the thickness direction of the resonator.
  • the acoustic interference on the upper and lower sides is Parts of the interference structure can also be arranged centrally symmetrically about the center of the active area of the resonator.
  • the cantilever structure of the bottom electrode 30 and the cantilever structure disposed on the bottom electrode 30 can respectively improve the impedance (Rp) or the quality factor ( Qp) role.
  • the cantilever structure of the bottom electrode 30 and the cantilever structure provided on the bottom electrode 30 can cooperate with each other, and this mutual cooperation can optimize the parallel connection of the bulk acoustic wave resonators.
  • the effect of impedance (Rp) or quality factor (Qp) at the resonant frequency can be minimized.
  • the topography and positional symmetry of the cantilever structure and the protruding structure of the bottom electrode 30 and the top electrode 50 improve the symmetry of the entire bulk acoustic wave resonator, thus eliminating the The parasitic mode enhancement effect caused by the symmetry, so the parasitic mode is suppressed.
  • the structure of the bulk acoustic wave resonator shown in Figure 1 is that the bottom electrode and the top electrode are symmetrical up and down, which makes the effect of the bulk acoustic wave resonator stronger and reduces the spurious mode effect of the bulk acoustic wave resonator; at the same time, A raised structure is added under the bottom electrode, and two cantilever structures are formed at both ends of the bottom electrode by means of photolithography, so that the bottom electrode has a double-wing structure, which effectively improves the impedance at the parallel resonance frequency of the bulk acoustic wave resonator. (Rp) or quality factor (Qp) to optimize the performance of BAW resonators.
  • the cantilever structure of the bottom electrode 30 and the protruding structure 60 on the bottom electrode 30 are located inside the boundary of the cavity of the acoustic mirror in the horizontal direction.
  • FIG. 2 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the main difference of the BAW resonator shown in FIG. 2 is the structure of the top electrode 50 .
  • the top electrode 50 is a flat electrode, and no protruding structure 60 is provided on the top electrode 50 .
  • the structure of the BAW resonator shown in FIG. 2 is simpler.
  • FIG 3 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the BAW resonator shown in FIG. 3 is only different in that the bottom electrode 30 is provided with a concave structure 90 in addition to the convex structure 60 , and the concave structure 90 is formed in the On the surface of the bottom electrode 30 facing away from the piezoelectric layer 40 (the lower surface in the figure); the top electrode 50 is provided with a concave structure 90 in addition to the convex structure 60 , and the concave structure 90 is formed on the back of the top electrode 50 .
  • the surface (upper surface in the figure) of the piezoelectric layer 40 On the surface (upper surface in the figure) of the piezoelectric layer 40 .
  • the cross-section of the recessed structure 90 is rectangular, and the depth of the recessed structure 90 is smaller than the thickness of the bottom electrode 30 or the top electrode 50 , and the cross-section of the recessed structure 90 may also be of other shapes.
  • FIG. 4 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the main difference of the BAW resonator shown in FIG. 4 is that in the embodiment shown in FIG. 4 , the top electrode 50 is a flat No concave structures are formed thereon, and no protruding structures 60 are provided on the top electrode 50 .
  • the structure of the bulk acoustic wave resonator shown in FIG. 4 is simpler.
  • the bottom electrode 30 or the top electrode 50 is provided with a protruding structure 60 and a recessed structure 90 , which helps to improve the quality factor ( Qs), reducing the impedance Rs at the series resonant frequency to optimize the performance of the BAW resonator.
  • FIG. 5 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • FIG. 5 The difference between the structure shown in FIG. 5 and the structure shown in FIG. 2 is that in FIG. 5 , the non-electrode connection side of the top electrode 50 is provided with a bridge structure, while in FIG. 2 , the top electrode 50 is not provided with a bridge structure.
  • Flat electrodes In FIG. 5 , the non-electrode connection side of the top electrode 50 is provided with a bridge structure, while in FIG. 2 , the top electrode 50 is not provided with a bridge structure.
  • Flat electrodes Flat electrodes.
  • FIG. 6 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the non-electrode connection end of the bottom electrode 30 is provided with a cantilever structure, and the bottom electrode connection end is provided with a bridge structure.
  • the electrode connection end of the top electrode 50 is provided with a bridge structure, and the non-electrode connection end is formed with a cantilever structure.
  • the raised structure 60 is provided at the cantilever structure.
  • the Q value of the BAW resonator is improved, and at the same time, the electromechanical coupling of the BAW resonator is not reduced.
  • coefficient Kt to optimize the performance of the BAW resonator.
  • the non-electrode connection ends of the bottom electrode and the top electrode are exemplarily arranged symmetrically with respect to the center of the resonator.
  • FIG. 7 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • a cantilever structure is formed at the non-electrode connection end of the bottom electrode 30 , and the cantilever structure extends outward.
  • the protruding structure 60 covers on the surface of the suspension structure of the bottom electrode 30 facing away from the piezoelectric layer 40 and covers only a part of the bottom electrode 30 .
  • the bottom electrode 30 and the protruding structures 60 provided on the bottom electrode 30 are located inside the boundary of the cavity of the acoustic mirror in the horizontal direction.
  • the top electrode 50 is a flat electrode.
  • FIG. 8 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • a cantilever structure extending outward is formed at the non-electrode connection end of the bottom electrode 30 , and a bridge structure is formed at the electrode connection end.
  • the protruding structures 60 cover the surfaces of the suspension structures of the bottom electrode 30 and the bridge structures facing away from the piezoelectric layer 40.
  • the protruding structures 60 cover the entire bridge portion and extend outward to the bridge structure.
  • the support layer 25 covers the protruding structure 60 of the electrode connecting end of the bottom electrode 30 .
  • the cantilever and bridge structures of the bottom electrode 30 and the protruding structures 60 on the bottom electrode 30 extend beyond the effective area of the BAW resonator.
  • the top electrode 50 is a flat electrode.
  • both the bridge structure and the cantilever structure of the bottom electrode 30 are located inside the boundary of the cavity of the acoustic mirror in the horizontal direction.
  • FIG. 9 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • FIG. 9 The difference between the structure shown in FIG. 9 and the structure shown in FIG. 8 is that in FIG. 9 , a groove is formed at the edge of the bottom electrode 30 close to the protruding structure 60 , the groove is filled with an insertion material 70 , and the insertion material 70 is different from the material of the bottom electrode 30 .
  • the insert material 70 is located within the raised structure 60 .
  • the insertion material 70 can effectively improve the quality factor (Qs) at the series resonance frequency of the BAW resonator and reduce the impedance (Rs) at the series resonance frequency, thereby optimizing the electrical performance of the BAW resonator.
  • FIG. 10 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the bottom electrode 30 is formed with a bridge structure.
  • a protruding structure 60 is provided on the lower side of the bridge structure of the bottom electrode 30 , and the portion of the bottom electrode 30 outside the bridge structure is covered by the support layer 25 .
  • the raised structure 60 partially covers the surface of the bridge structure facing away from the piezoelectric layer 40 .
  • a trench is etched on the raised structure 60 .
  • the etching depth of the trench is less than the thickness of the raised structure 60 , for example, the etching depth of the trench may be equal to half of the thickness of the raised structure 60 .
  • the inner edge of the bridge structure of the bottom electrode 30 defines the boundary of the effective area of the resonator, and the raised structure 60 is outside the effective area and horizontally in the hollow of the acoustic mirror.
  • the top electrode 50 is a flat electrode layer, and any protruding structure is not provided on the top electrode 50 .
  • FIG. 11 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the main difference of the BAW resonator shown in Figure 11 compared to the embodiment shown in Figure 10 is the depth of the grooves.
  • the etching depth of the trench is equal to the thickness of the protruding structure 60 , that is, the trench penetrates the protruding structure 60 in the thickness direction.
  • FIG. 12 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • FIG. 12 The difference between the structure shown in FIG. 12 and the structure shown in FIG. 10 is that in FIG. 12 , the bottom electrode is not provided with the protruding structure 60 , and in FIG. 12 , the outer part of the bridge structure of the bottom electrode 30 is in the horizontal direction on the inside of the boundary of the acoustic mirror cavity.
  • FIG. 13 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the protruding structure 60 covers the bridge structure of the bottom electrode 30 .
  • FIG. 14 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • FIG. 14 The difference between the structure shown in FIG. 14 and the structure shown in FIG. 12 is that, in FIG. 14 , the bridge structure of the non-electrode connection end of the bottom electrode is partially covered by the support layer 25 .
  • FIG. 15 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the structure shown in FIG. 15 is different from the structure shown in FIG. 13 in that, in FIG. 15 , the protruding structure 60 of the bridge structure covering the bottom electrode is partially covered by the support layer 25 .
  • 16 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the protruding structure 60 covers the entire bridge structure, and extends outwardly between the support layer 25 and the bottom electrode on the outside of the bridge structure, and at the outer side of the bridge structure.
  • the inner side of the raised structure 60 is in the inner side of the inner edge of the corresponding bridge structure in the horizontal direction.
  • FIG. 17 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • FIG. 17 The difference between the structure shown in FIG. 17 and the structure shown in FIG. 16 is that in FIG. 17 , the boundary of the acoustic mirror cavity is in the horizontal direction between the inner edge and the outer edge of the corresponding bottom electrode bridge structure, and in FIG. 17 , the support layer covers the position of the bridge structure.
  • FIG. 18 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • a horizontally extending acoustic interference structure 80 is connected to the non-electrode connection end of the bottom electrode 30 . Grooves are formed on the lower surface of the piezoelectric layer 40 .
  • the interference structure 80 completely covers the groove on the piezoelectric layer 40 .
  • the bottom electrode 30 and the interference structure 80 are horizontally inside the boundary of the cavity of the acoustic mirror. Furthermore, in FIG. 18, the inner edge of the groove is flush with the edge of the non-electrode connection end of the bottom electrode.
  • FIG. 19 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the inner edge of the groove is in the inner side of the edge of the non-electrode connecting end of the bottom electrode in the horizontal direction.
  • FIG. 20 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the difference between the structure shown in FIG. 20 and the structure shown in FIG. 18 is that in FIG. 20 , the outer edge of the groove is horizontally outside the edge of the non-electrode connecting end of the bottom electrode, that is, the interference structure 80 partially covers the piezoelectric
  • the groove on the layer 40, and at least a part of the groove on the piezoelectric layer 40 is not covered, is in an open state.
  • 21 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • the surface of the bottom electrode 30 facing away from the piezoelectric layer 40 is covered with a flat interference structure 80 , and the interference structure 80 covers the bottom electrode 30 and extends outside the non-electrode connection end of the bottom electrode 30 in the horizontal direction.
  • the bottom electrode 30 and the interference structure 80 are horizontally inside the boundary of the cavity of the acoustic mirror.
  • FIG. 22 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • a groove penetrating the bottom electrode 30 in the thickness direction is formed at the non-electrode connection end of the bottom electrode 30 , and a flat interference structure 80 is covered on the surface of the bottom electrode 30 facing away from the piezoelectric layer 40 , and the interference structure 80 completely covers the slot.
  • the interference structure 80 does not completely cover the bottom electrode 30 , but only partially covers the bottom electrode 30 .
  • the bottom electrode 30 and the interference structure 80 are horizontally inside the boundary of the cavity of the acoustic mirror.
  • FIG. 23 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • An interference structure 80 is provided on the surface of the non-electrode connection end of the bottom electrode 30 facing away from the piezoelectric layer 40 , and the interference structure 80 is a cantilever structure extending inward.
  • the bottom electrode 30 and the interference structure 80 are horizontally inside the boundary of the cavity of the acoustic mirror.
  • FIG. 24 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • An interference structure 80 is disposed on the surface of the non-electrode connection end of the bottom electrode 30 facing away from the piezoelectric layer 40 , and the interference structure 80 is a cantilever structure extending outward.
  • the bottom electrode 30 and the interference structure 80 are horizontally inside the boundary of the cavity of the acoustic mirror.
  • 25 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • An interference structure 80 is disposed at the non-electrode connection end of the bottom electrode 30 , and the interference structure 80 is a bridge structure.
  • 26 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • An interference structure 80 is disposed at the non-electrode connection end of the bottom electrode 30 , the interference structure 80 is a bridge structure, and one end of the interference structure 80 is located on the bottom electrode 30 and the other end is located on the piezoelectric layer 40 . That is, the interference structure 80 bridges between the bottom electrode 30 and the piezoelectric layer 40 .
  • FIG. 27 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • An interference structure 80 is provided on the bottom electrode 30 .
  • the interference structure 80 includes a straight body portion covering the bottom electrode 30 and a cantilever structure formed on both sides of the body portion.
  • FIG. 28 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • An interference structure 80 is provided on the bottom electrode 30 .
  • the interference structure 80 includes a flat main body part covering the bottom electrode 30 and a bridge structure formed on both sides of the main body part, and one end of the bridge structure is located on the bottom electrode 30 and the other end is located on the piezoelectric layer 40 . That is, the bridge structure bridges between the bottom electrode 30 and the piezoelectric layer 40 .
  • 29 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • An interference structure 80 is attached to the non-electrode connection end of the bottom electrode 30 .
  • the interference structure 80 is an outwardly extending cantilever structure. Both the bottom electrode 30 and the interference structure 80 are completely contained within the cavity of the acoustic mirror 20 .
  • FIG. 30 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • both the bottom electrode 30 and the top electrode 50 are flat electrode layers.
  • An interference structure 80 is attached to the non-electrode connection end of the bottom electrode 30 .
  • the interference structure 80 is a bridge structure. One end of the interference structure 80 is connected to the bottom electrode 30 and the other end is connected to the piezoelectric layer 40 . Both the bottom electrode 30 and the interference structure 80 are completely contained within the cavity of the acoustic mirror 20 .
  • FIG. 31 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the bottom electrode 30 and the interference structure 80 are horizontally inside the boundary of the acoustic mirror cavity.
  • a cantilever structure is formed at the non-electrode connection end of the bottom electrode 30 , so that the bottom electrode 30 has a double-wing structure.
  • An interference structure 80 is provided on the bottom electrode 30 , and the interference structure 80 completely covers the bottom electrode 30 , so that the edge of the interference structure 80 coincides with the edge of the bottom electrode 30 .
  • FIG. 32 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • the bottom electrode 30 and the interference structure 80 are located inside the boundary of the cavity of the acoustic mirror in the horizontal direction, and a bridge structure is formed at the non-electrode connection end of the bottom electrode 30 .
  • An interference structure 80 is provided on the bottom electrode 30 , and the interference structure 80 completely covers the bottom electrode 30 , so that the edge of the interference structure 80 coincides with the edge of the bottom electrode 30 .
  • the piezoelectric layer adopts a straight single crystal thin film structure, and at the same time, by setting the positions and morphological characteristics of the convex structure, the bridge structure and the cantilever structure on the surface of the bulk acoustic wave resonator, the The performance of the resonator is optimized by maximizing the impedance (Rp) or quality factor (Qp) at the parallel resonant frequency of the bulk acoustic wave resonator while suppressing the effect of spurious modes of the resonator.
  • Rp impedance
  • Qp quality factor
  • the piezoelectric layer is in a horizontal state over the entire BAW resonator level, and the BAW resonator eliminates the spurious mode enhancement effect caused by the bending of the piezoelectric layer, so the spurious mode is suppressed.
  • the protruding structures, bridge structures, and cantilever structures on the bottom electrode may extend in the opposite direction of the piezoelectric layer (here, extending downward, while the protruding structures,
  • the bridge structure and the cantilever structure can also extend in the opposite direction of the piezoelectric layer, in this case, the upward extension).
  • Rp resistance of the piezoelectric layer
  • Qp quality factor
  • the protruding structures, bridge structures and cantilever structures on the bottom electrode can extend in the same direction of the piezoelectric layer, and the protruding structures and bridge structures on the bottom electrode can cooperate with each other and protrude
  • the structure and the cantilever structure can cooperate with each other, and this cooperative relationship can serve to optimize the impedance (Rp) or quality factor (Qp) at the parallel resonance frequency of the resonator.
  • the morphology and positional symmetry of the protruding structures, bridge structures, and cantilever structures on the bottom and top electrodes improve the symmetry of the entire resonator, thus eliminating the need for asymmetry due to The resulting parasitic mode enhancement effect, so the parasitic mode is suppressed.
  • the flat nature of the piezoelectric layer further enhances this symmetry, so that spurious modes are further suppressed.
  • upper and lower are relative to the bottom surface of the base of the resonator.
  • the side close to the bottom surface is the lower side, and the side away from the bottom surface is the upper side.
  • the center of the effective area of the resonator (the overlapping area of the piezoelectric layer, the top electrode, the bottom electrode and the acoustic mirror in the thickness direction of the resonator constitutes the effective area) (ie, the center of the effective area).
  • the side or end of a component close to the center of the effective area is the inner or inner end
  • the side or end of the component away from the center of the effective area is the outer or outer end.
  • BAW resonators may be used to form filters or electronic devices.
  • a bulk acoustic wave resonator comprising:
  • the single crystal piezoelectric layer is arranged between the bottom electrode and the top electrode,
  • a support structure is arranged between the lower surface of the piezoelectric layer and the upper surface of the substrate, and the piezoelectric layer and the substrate are generally arranged in parallel;
  • the bottom electrode is provided with a first acoustic interference structure.
  • the first acoustic interference structure comprises at least one of a cantilever structure, a bridge structure, a convex structure, and a concave structure disposed on the bottom electrode.
  • the non-electrode connection end of the bottom electrode is provided with a cantilever structure or a bridge structure; and/or
  • the electrode connecting end of the bottom electrode is provided with a bridge structure.
  • the non-electrode connection end of the bottom electrode further includes a convex structure and/or a concave structure; and/or
  • the electrode connection end of the bottom electrode further includes a convex structure and/or a concave structure.
  • the inner edge of the raised structure is inside the active area of the resonator;
  • the outer edge of the raised structure is outside the active area of the resonator.
  • a depression or groove is provided on the lower side of the piezoelectric layer, and the non-electrode connection end of the bottom electrode covers at least a part of the depression or groove to form the suspension structure;
  • the bottom electrode is a flat electrode, and the non-electrode connection end of the bottom electrode extends to the outside of the piezoelectric layer in the horizontal direction to form the suspension structure;
  • the bottom electrode is a straight electrode, and the lower surface of the non-electrode connection end of the bottom electrode is provided with a cantilever portion that only partially covers the part of the bottom electrode located in the effective area of the resonator, the cantilever portion
  • the cantilever structure is formed by extending from the non-electrode connection end of the bottom electrode toward the inner direction, or the suspension portion extends from the non-electrode connection end of the bottom electrode toward the outer direction to form the suspension structure; or
  • the bottom electrode is a flat electrode, and the lower surface of the bottom electrode is provided with a cantilever layer covering the part of the bottom electrode located in the effective area of the resonator, and the outer end of the cantilever layer is connected to the
  • the non-electrode connection end of the bottom electrode has a gap in the thickness direction of the resonator to form the cantilever structure;
  • the bottom electrode includes a straight portion and a cantilever portion connected to the straight portion at a non-electrode connecting end of the bottom electrode, the cantilever portion is in contact with the lower portion of the piezoelectric layer in the thickness direction of the resonator.
  • the surfaces are spaced apart to form the cantilever structure.
  • the non-electrode connection end of the bottom electrode directly forms the bridge structure
  • the bottom electrode is a flat electrode
  • the resonator further includes a bridge portion, the inner end of the bridge portion in the horizontal direction is connected to the bottom electrode on the lower surface of the non-electrode connecting end of the bottom electrode, and the bridge portion is at the bottom of the bottom electrode.
  • the outer end in the horizontal direction is in contact with the piezoelectric layer, and the bridge portion defines the bridge structure; or
  • the bottom electrode is a flat electrode
  • the resonator further includes a bridge portion, and the inner end and the outer end of the bridge portion in the horizontal direction are both connected to the bottom electrode on the lower surface of the non-electrode connecting end of the bottom electrode, so the bridge portion defines the bridge structure;
  • the bottom electrode is a flat electrode, and the lower surface of the bottom electrode is provided with a bridge layer covering the part of the bottom electrode located in the effective area of the resonator, and the outer end of the bridge layer is connected to the bottom electrode.
  • the non-electrode connection end has a gap in the thickness direction of the resonator to form the bridge structure;
  • the bottom electrode includes a straight portion and a bridge portion connected to the straight portion at a non-electrode connection end of the bottom electrode, an inner end of the bridge portion in the horizontal direction is connected to the straight portion, and the bridge portion is connected to the straight portion.
  • the outer end of the portion in the horizontal direction is connected to the bottom electrode, and the bridge portion defines the bridge structure.
  • a filter comprising the resonator of any of 1-12.
  • An electronic device comprising the resonator according to any one of 1-12, or the filter according to 13.
  • the electronic equipment here includes, but is not limited to, intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.

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Abstract

本发明涉及一种体声波谐振器，包括：基底；压电层；声学镜；底电极；顶电极；单晶压电层，设置在底电极与顶电极之间，其中：压电层的下表面与基底的上表面之间设置有支撑结构，压电层与基底大体平行布置；所述底电极设置有声学干涉结构。本发明还涉及一种滤波器以及一种电子设备。

Description

体声波谐振器、滤波器及电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器、一种包括该体声波谐振器的滤波器，以及一种包括该体声波谐振器或该滤波器的电子设备。
背景技术
随着5G通信技术的日益发展，对通信频段的要求越来越高。传统的射频滤波器受结构和性能的限制，不能满足高频通信的要求。薄膜体声波谐振器(FBAR)作为一种新型的MEMS器件，具有体积小、质量轻、插入损耗低、频带宽以及品质因子高等优点，很好地适应了无线通信系统的更新换代，使FBAR技术成为通信领域的研究热点之一。
薄膜体声波谐振器的结构主体为由电极-压电薄膜-电极组成的“三明治”结构，即两层金属电极层之间夹一层压电材料。通过在两电极间输入正弦信号，FBAR利用逆压电效应将输入电信号转换为机械谐振，并且再利用压电效应将机械谐振转换为电信号输出。
在现有的技术中，传统的薄膜体声波谐振器的压电层采用半导体薄膜沉积工艺制备(如溅射工艺)，一方面压电薄膜为多晶结构，另一方面因压电层沉积在底电极上，沉积形成的压电层结构并不是平直状态，导致谐振器整体电性能并未达到最优化。因此，传统的薄膜体声波谐振器不能实现更为优化的电性能。
发明内容
为缓解或解决现有技术中的上述问题的至少一个方面，提出本发明。
根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括：基底、压电层、声学镜、底电极、顶电极和设置在底电极与顶电极之间的单晶压电层。压电层的下表面与基底的上表面之间设置有支撑结构，压电层与基底大体平行布置。所述底电极设置有第一声学干涉结构。
根据本发明的另一个方面，还提供一种包括前述体声波谐振器的滤波器。
根据本发明的另一个方面，还提供一种包括前述体声波谐振器或滤波器的电子设备。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1-32为根据本发明的不同示例性实施例的体声波谐振器的截面示意图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。发明的一部分实施例，而并不是全部的实施例。基于本发明中的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本发明保护的范围。
首先，本发明的附图中的附图标记说明如下：
10：基底，可选材料为单晶硅、氮化镓、砷化镓、蓝宝石、石英、碳化硅、金刚石等。
20：声学镜，可以是空腔，也可采用布拉格反射层及其他等效形式，本发明所示的实施例中采用的是空腔。
25：支撑层，材料可为铜，金或以上金属的复合或其合金等，也可以是SiN、SiO 2等介质材料。
30：底电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。
40：单晶压电层，可选单晶氮化铝、单晶氮化镓、单晶铌酸锂、单晶锆钛酸铅、单晶铌酸钾、单晶石英薄膜、或者单晶钽酸锂等材料，还可包含上述材料的一定原子比的稀土元素掺杂材料，例如可以是掺杂氮化铝，掺杂氮化铝至少含一种稀土元素，如钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、 钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。
50：顶电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。顶电极和底电极材料一般相同，但也可以不同。
60：凸起结构，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等，也可以选择介质材料或压电材料，如二氧化硅、氮化硅、氮化铝等。
70：插入材料,其与底电极的材料不同，其材料可为：电极材料的氧化物、氮化物、氮化铝、氮化硅、氧化硅等。
80：声学干涉结构,其可为悬翼结构、桥结构、凹陷结构、凸起结构等。
图1为根据本发明的一个示例性实施例的体声波谐振器的截面示意图。
如图1所示，在图示的实施例中，该体声波谐振器主要包括：基底10、支撑层25、声学镜20、底电极30、压电层40和顶电极50。支撑层25设置在基底10上，用于支撑体声波谐振器的谐振结构。在支撑层25中形成有一个空腔，该空腔构成声学镜20。底电极30设置在压电层40的底面上，顶电极50设置在压电层40的上表面上，使得压电层40被夹持在底电极30和顶电极50之间。如图1所示，压电层40的下表面与基底10的上表面之间设置所述支撑层25(即支撑结构)，压电层40与基底10大体平行布置。
如图1所示，在图示的实施例中，压电层40为平直的单晶压电层。在本发明中，压电层40采用平直的单晶薄膜结构，使得压电层40在整个体声波谐振器层面都为水平状态，因此，体声波谐振器能够消除由于压电层弯曲导致的寄生模式增强效应，因此寄生模式得到抑制。
如图1所示，在图示的实施例中，底电极30的非电极连接端形成有悬翼结构，该悬翼结构向外延伸。在底电极30的悬翼结构的面对压电层40的表面上覆盖有凸起结构60。在图1所示的实施例中，在电极的非电极连接端，底电极30的悬翼结构和底电极30上的凸起结构60在水平方向上处于声学镜20边界的内侧。在图1所示的实施例中，在顶电极50上也形成有悬翼结构，且在顶电极50的悬翼结构的面对压电层40的表面上也 设置有凸起结构60。
需要指出的是，本发明不局限于图示的实施例，例如，凸起结构60也可以覆盖在底电极30的悬翼结构的背对压电层40的表面上，这些变化例也应落入本发明的保护范围之内。
在图1所示的实施例中，设置在底电极30和顶电极50上的悬翼结构和凸起结构60构成了用于优化体声波谐振器的电性能的声学干涉结构。通过合理设置这些声学干涉结构能够提高体声波谐振器的并联谐振频率处阻抗(Rp)或品质因数(Qp)。
如图1所示，在图示的实施例中，顶电极50和底电极30对称地设置在压电层40的上下两侧。顶电极50上的凸起结构60和底电极30上的凸起结构60也对称地设置在压电层40的上下两侧。这里的对称，为电极的非电极连接端的上下两侧的声学干涉结构的部分，关于垂直于谐振器的厚度方向的压电层中分面对称设置，在图1中，上下两侧的声学干涉结构的部分也可以关于谐振器的有效区域的中心中心对称布置。
在图1所示的实施例中，底电极30的悬翼结构以及设置在底电极30上的悬翼结构能够分别起到提高体声波谐振器的并联谐振频率处阻抗(Rp)或品质因数(Qp)的作用。
此外，在图1所示的实施例中，底电极30的悬翼结构与设置在底电极30上的悬翼结构能够相互配合，这种相互配合的关系能够起到优化体声波谐振器的并联谐振频率处阻抗(Rp)或品质因数(Qp)的作用。
此外，在图1所示的实施例中，底电极30和顶电极50的悬翼结构和凸起结构的形貌及位置对称性提高了整个体声波谐振器的对称性，因此消除了由于不对称性导致的寄生模式增强效应，因此寄生模式得到抑制。
与传统的体声波谐振器相比，图1所示的体声波谐振器的结构为底电极与顶电极上下对称，使得体声波谐振器效果增强，降低体声波谐振器的寄生模式效应；同时，在底电极下增加了凸起结构，底电极两端通过光刻刻蚀等工艺手段来形成两个悬翼结构，使得底电极具有双翼结构，有效提高体声波谐振器的并联谐振频率处的阻抗(Rp)或品质因数(Qp)，以此来优化体声波谐振器的性能。
在图1所示的实施例中，底电极30的悬翼结构和底电极30上的凸起结构60在水平方向上处于声学镜空腔的边界的内侧。
图2为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
与图1所示的示例性实施例相比，图2所示的体声波谐振器的主要区别在于顶电极50的结构不同。
如图2所示，在图示的实施例中，顶电极50为平直的电极，且在顶电极50上没有设置任何凸起结构60。与图1所示的实施例相比，图2所示的体声波谐振器的结构更为简单。
除了前述区别之外，图2所示的体声波谐振器的其他特征与图1所示的实施例基本相同，为了简洁起见，这里不再赘述。
图3为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
与图1所示的示例性实施例相比，图3所示的体声波谐振器的区别仅在于：底电极30除了凸起结构60之外还设置有凹陷结构90，该凹陷结构90形成在底电极30的背对压电层40的表面(图中的下表面)上；顶电极50除了凸起结构60之外还设置有有凹陷结构90，该凹陷结构90形成在顶电极50的背对压电层40的表面(图中的上表面)上。凹陷结构90的截面呈矩形，并且凹陷结构90的深度小于底电极30或顶电极50的厚度，凹陷结构90的截面也可以为其他形状。
除了前述区别之外，图3所示的体声波谐振器的其他特征与图1所示的实施例基本相同，为了简洁起见，这里不再赘述。
图4为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
与图3所示的示例性实施例相比，图4所示的体声波谐振器的主要区别在于：在图4所示的实施例中，顶电极50为平直的电极，在顶电极50上没有形成任何凹陷结构，且在顶电极50上没有设置任何凸起结构60。与图3所示的实施例相比，图4所示的体声波谐振器的结构更为简单。
除了前述区别之外，图4所示的体声波谐振器的其他特征与图3所示的实施例基本相同，为了简洁起见，这里不再赘述。
在图3和图4所示的实施例中，在底电极30或顶电极50设置有凸起结构60和凹陷结构90，这有助于提高体声波谐振器的串联谐振频率处的品质因数(Qs)，减小串联谐振频率处的阻抗Rs，以此来优化体声波谐振 器的性能。
图5为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图5所示结构与图2中所示的结构的区别在于：在图5中，顶电极50的非电极连接边设置有桥结构，而在图2中顶电极50为并未设置桥结构的平直电极。
除了前述区别之外，图5所示的体声波谐振器的其他特征与图2所示的实施例基本相同，为了简洁起见，这里不再赘述。
图6为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图6所示，在图示的实施例中，在底电极30的非电极连接端设置有悬翼结构，底电极连接端设置有桥结构。顶电极50的电极连接端设置有桥结构，非电极连接端形成有悬翼结构。在图6中，凸起结构60设置在悬翼结构处。
在图6所示的实施例中，通过在底电极30和顶电极50上形成桥结构和悬翼结构，提高了体声波谐振器的Q值，同时有利于不降低体声波谐振器的机电耦合系数Kt，以此来优化体声波谐振器的性能。
在图6所示的结构中，示例性的，底电极和顶电极的非电极连接端关于谐振器的中心对称布置。
图7为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图7所示，在图示的实施例中，在底电极30的非电极连接端形成有悬翼结构，该悬翼结构向外延伸。凸起结构60覆盖在底电极30的悬翼结构的背对压电层40的表面上，并且仅覆盖底电极30的一部分。在图7所示的实施例中，底电极30和设置在底电极30上的凸起结构60在水平方向上处于声学镜空腔的边界的内侧。图7中，顶电极50为平直电极。
图8为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图8所示，在图示的实施例中，在底电极30的非电极连接端形成有向外延伸的悬翼结构，电极连接端形成有桥结构。凸起结构60覆盖在底电极30的悬翼结构和桥结构的背对压电层40的表面上，在底电极的电 极连接端，凸起结构60覆盖整个桥部且向外延伸到桥结构的外侧，支撑层25覆盖底电极30的电极连接端的凸起结构60。底电极30的悬翼结构和桥结构和底电极30上的凸起结构60延伸至体声波谐振器的有效区域之外。
在图8中，顶电极50为平直电极。此外，底电极30的桥结构以及悬翼结构在水平方向上均处于声学镜空腔的边界的内侧。
图9为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图9所示结构与图8所示结构的区别在于：在图9中，在底电极30的靠近凸起结构60的边缘处形成有凹槽，在凹槽中填充有插入材料70，插入材料70与底电极30的材料不同。该插入材料70位于凸起结构60之内。该插入材料70能够有效提高体声波谐振器的串联谐振频率处的品质因数(Qs)，减小串联谐振频率处的阻抗(Rs)，以此来优化体声波谐振器的电性能。
除了前述区别之外，图9所示的体声波谐振器的其他特征与图8所示的实施例基本相同，为了简洁起见，这里不再赘述。
图10为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图10所示，在图示的实施例中，底电极30形成有桥结构。在底电极30的桥结构的下侧设置有凸起结构60，底电极30的在桥结构外侧的部分被支撑层25覆盖。凸起结构60部分地覆盖在桥结构的背对压电层40的表面上。在凸起结构60上刻蚀有沟槽。该沟槽的刻蚀深度小于凸起结构60的厚度，例如，该沟槽的刻蚀深度可以等于凸起结构60的厚度的一半。
如图10所示，在图示的实施例中，底电极30的桥结构的内边缘限定谐振器的有效区域的边界，凸起结构60处于有效区域的外侧且在水平方向上处于声学镜空腔的边界的内侧。顶电极50为平直的电极层，并且在顶电极50上没有设置任何凸起结构。
图11为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
与图10所示的实施例相比，图11所示的体声波谐振器的主要区别在 于沟槽的深度不同。
如图11所示，在图示的实施例中，沟槽的刻蚀深度等于凸起结构60的厚度，即沟槽在厚度方向上贯穿凸起结构60。
除了前述区别之外，图11所示的体声波谐振器的其他特征与图10所示的实施例基本相同，为了简洁起见，这里不再赘述。
图12为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图12所示的结构与图10所示的结构的区别在于：在图12中，底电极并未设置凸起结构60，而且在图12中，底电极30的桥结构的外侧部分在水平方向上处于声学镜空腔的边界的内侧。
除了前述区别之外，图12所示的体声波谐振器的其他特征与图10所示的实施例基本相同，为了简洁起见，这里不再赘述。
图13为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图13所示结构与图12所示结构的不同在于，在图13中，凸起结构60覆盖了底电极30的桥结构。
除了前述区别之外，图13所示的体声波谐振器的其他特征与图12所示的实施例基本相同，为了简洁起见，这里不再赘述。
图14为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图14所示结构与图12所示结构的不同在于，在图14中，底电极的非电极连接端的桥结构被支撑层25覆盖了一部分。
除了前述区别之外，图14所示的体声波谐振器的其他特征与图12所示的实施例基本相同，为了简洁起见，这里不再赘述。
图15为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图15所示结构与图13所示结构的不同在于，在图15中，覆盖底电极的桥结构的凸起结构60被支撑层25覆盖了一部分。
除了前述区别之外，图15所示的体声波谐振器的其他特征与图13所示的实施例基本相同，为了简洁起见，这里不再赘述。
图16为根据本发明的另一个示例性实施例的体声波谐振器的截面示 意图。
图16所示结构与图10所示结构的区别在于：在图16中，凸起结构60覆盖整个桥结构，且向外延伸到支撑层25与底电极在桥结构的外侧之间，且在图16中，凸起结构60的内侧在水平方向上处于对应的桥结构的内边缘的内侧。
除了前述区别之外，图16所示的体声波谐振器的其他特征与图10所示的实施例基本相同，为了简洁起见，这里不再赘述。
图17为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图17所示结构与图16所示结构的不同在于：在图17中，声学镜空腔的边界在水平方向上处于对应的底电极的桥结构的内边缘与外边缘之间，在图17中，支撑层覆盖到了桥结构的位置。
除了前述区别之外，图17所示的体声波谐振器的其他特征与图16所示的实施例基本相同，为了简洁起见，这里不再赘述。
图18为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图18所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30的非电极连接端连接有水平延伸的声学干涉结构80。在压电层40的下表面上形成有凹槽。干涉结构80完全覆盖压电层40上的凹槽。底电极30和干涉结构80在水平方向上处于声学镜空腔的边界的内侧。此外，在图18中，凹槽的内边缘与底电极的非电极连接端的边缘齐平。
图19为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图19所示结构与图18所示结构的区别在于：在图19中，凹槽的内边缘在水平方向上处于底电极的非电极连接端的边缘的内侧。
除了前述区别之外，图19所示的体声波谐振器的其他特征与图18所示的实施例基本相同，为了简洁起见，这里不再赘述。
图20为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
图20所示结构与图18所示结构的区别在于：在图20中，凹槽的外 边缘在水平方向上处于底电极的非电极连接端的边缘的外侧，即干涉结构80部分地覆盖压电层40上的凹槽，并且压电层40上的凹槽的至少一部分没有被覆盖，处于开放状态。
除了前述区别之外，图20所示的体声波谐振器的其他特征与图18所示的实施例基本相同，为了简洁起见，这里不再赘述。
图21为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图21所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30的背对压电层40的表面上覆盖有平直的干涉结构80，并且该干涉结构80覆盖底电极30，且在水平方向上延伸到底电极30的非电极连接端的外侧。在图21中，底电极30和干涉结构80在水平方向上处于声学镜空腔的边界的内侧。
图22为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图22所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30的非电极连接端形成有沿厚度方向贯穿底电极30的槽，在底电极30的背对压电层40的表面上覆盖有平直的干涉结构80，且干涉结构80完全覆盖该槽。
在图22所示的实施例中，干涉结构80没有完全覆盖底电极30，仅是部分地覆盖底电极30。底电极30和干涉结构80在水平方向上处于声学镜空腔的边界的内侧。
图23为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图23所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30的非电极连接端的背对压电层40的表面上设置有干涉结构80，该干涉结构80为向内延伸的悬翼结构。
在图23中，底电极30和干涉结构80在水平方向上处于声学镜空腔的边界的内侧。
图24为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图24所示，在图示的实施例中，底电极30和顶电极50都为平直 的电极层。在底电极30的非电极连接端的背对压电层40的表面上设置有干涉结构80，该干涉结构80为向外延伸的悬翼结构。
在图24中，底电极30和干涉结构80在水平方向上处于声学镜空腔的边界的内侧。
图25为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图25所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30的非电极连接端设置有干涉结构80，该干涉结构80为桥结构，并且干涉结构80的一端的边缘与底电极30的边缘重合，另一端位于底电极30上。
图26为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图26所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30的非电极连接端设置有干涉结构80，该干涉结构80为桥结构，并且干涉结构80的一端位于底电极30上，另一端位于压电层40上。即，干涉结构80跨接在底电极30和压电层40之间。
图27为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图27所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30上设置有干涉结构80。该干涉结构80包括覆盖在底电极30上的平直的主体部和形成在主体部的两侧的悬翼结构。
图28为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图28所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30上设置有干涉结构80。该干涉结构80包括覆盖在底电极30上的平直的主体部和形成在主体部的两侧的桥结构，并且该桥结构的一端位于底电极30上，另一端位于压电层40上。即，该桥结构跨接在底电极30和压电层40之间。
图29为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图29所示，在图示的实施例中，底电极30和顶电极50都为平直 的电极层。在底电极30的非电极连接端附接有干涉结构80。该干涉结构80为向外延伸的悬翼结构。底电极30和干涉结构80都完全容纳在声学镜20的空腔中。
图30为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图30所示，在图示的实施例中，底电极30和顶电极50都为平直的电极层。在底电极30的非电极连接端附接有干涉结构80。该干涉结构80为桥结构。该干涉结构80的一端连接至底电极30，另一端连接至压电层40。底电极30和干涉结构80都完全容纳在声学镜20的空腔中。
图31为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图31所示，在图示的实施例中，底电极30和干涉结构80在水平方向上处于声学镜空腔的边界的内侧。在底电极30的非电极连接端形成有悬翼结构，使得底电极30具有双翼结构。在底电极30上设置有干涉结构80，该干涉结构80完全覆盖在底电极30上，使得干涉结构80的边缘与底电极30的边缘重合。
图32为根据本发明的另一个示例性实施例的体声波谐振器的截面示意图。
如图32所示，在图示的实施例中，底电极30和干涉结构80在水平方向上处于声学镜空腔的边界的内侧，在底电极30的非电极连接端形成有桥结构。在底电极30上设置有干涉结构80，该干涉结构80完全覆盖在底电极30上，使得干涉结构80的边缘与底电极30的边缘重合。
在本发明的前述实施例中，压电层采用平直的单晶薄膜结构，同时，通过设置凸起结构、桥结构、悬翼结构在体声波谐振器表面分布的位置及形貌特征，来最大化地提高体声波谐振器的并联谐振频率处阻抗(Rp)或品质因数(Qp)，同时抑制谐振器的寄生模式效应，以此来优化谐振器的性能。
在本发明的前述实施例中压电层在整个体声波谐振器层面都为水平状态，体声波谐振器消除了由于压电层弯曲导致的寄生模式增强效应，因此寄生模式得到抑制。
在本发明的前述一些实施例中，底电极上的凸起结构、桥结构、悬翼 结构可以向压电层的反方向延伸(在此为向下延伸，而顶电极上的凸起结构、桥结构、悬翼结构也可以向压电层的反方向延伸，在此为向上延伸)，凸起结构、桥结构、悬翼结构能够分别最大化地起到提高谐振器的并联谐振频率处阻抗(Rp)或品质因数(Qp)的作用。
在本发明的前述一些实施例中，底电极上的凸起结构、桥结构、悬翼结构可以向压电层的同方向延伸，底电极上的凸起结构和桥结构能够相互配合、凸起结构和悬翼结构能够相互配合，这种相互配合的关系能够起到优化谐振器的并联谐振频率处阻抗(Rp)或品质因数(Qp)的作用。
在本发明的前述一些实施例中，底电极和顶电极上的凸起结构、桥结构、悬翼结构的形貌及位置对称性提高了整个谐振器的对称性，因此消除了由于不对称性导致的寄生模式增强效应，因此寄生模式得到抑制。压电层的平直特性进一步提高了这种对称性，因此寄生模式得到进一步的抑制。
在本发明中，上和下是相对于谐振器的基底的底面而言的，对于一个部件，其靠近该底面的一侧为下侧，远离该底面的一侧为上侧。
在本发明中，内和外是相对于谐振器的有效区域(压电层、顶电极、底电极和声学镜在谐振器的厚度方向上的重叠区域构成有效区域)的中心(即有效区域中心)在横向方向或者径向方向上而言的，一个部件的靠近有效区域中心的一侧或一端为内侧或内端，而该部件的远离有效区域中心的一侧或一端为外侧或外端。对于一个参照位置而言，位于该位置的内侧表示在横向方向或径向方向上处于该位置与有效区域中心之间，位于该位置的外侧表示在横向方向或径向方向上比该位置更远离有效区域中心。
如本领域技术人员能够理解的，根据本发明的体声波谐振器可以用于形成滤波器或电子设备。
基于以上，本发明提出了如下技术方案：
1、一种体声波谐振器，包括：
基底；
压电层；
声学镜；
底电极；
顶电极；和
单晶压电层，设置在底电极与顶电极之间，
其中：
压电层的下表面与基底的上表面之间设置有支撑结构，压电层与基底大体平行布置；
所述底电极设置有第一声学干涉结构。
2、根据1所述的谐振器，其中，所述第一声学干涉结构包括设置在底电极的悬翼结构、桥结构、凸起结构、凹陷结构中的至少一种。
3、根据2所述的谐振器，其中：
所述底电极的非电极连接端设置有悬翼结构或桥结构；和/或
所述底电极的电极连接端设置有桥结构。
4、根据3所述的谐振器，其中：
所述底电极的非电极连接端还包括凸起结构和/或凹陷结构；和/或
所述底电极的电极连接端还包括凸起结构和/或凹陷结构。
5、根据3所述的谐振器，其中：
所述凸起结构的内边缘处于谐振器的有效区域的内侧；和/或
所述凸起结构的外边缘处于谐振器的有效区域的外侧。
6、根据3所述的谐振器，其中：
所述压电层的下侧设置有凹陷或沟槽，所述底电极的非电极连接端覆盖所述凹陷或沟槽的至少一部分以形成所述悬翼结构；或者
所述底电极为平直电极，且所述底电极的非电极连接端在水平方向上延伸到压电层的外侧以形成所述悬翼结构；或者
所述底电极为平直电极，且所述底电极的非电极连接端的下表面设置有仅部分覆盖所述底电极的位于谐振器的有效区域内的部分的悬翼部，所述悬翼部自所述底电极的非电极连接端朝向内侧方向延伸以形成所述悬翼结构，或者所述悬翼部自所述底电极的非电极连接端朝向外侧方向延伸以形成所述悬翼结构；或者
所述底电极为平直电极，且所述底电极的下表面设置有覆盖所述底电极的位于谐振器的有效区域内的部分的悬翼层，所述悬翼层的外端与所述底电极的非电极连接端在谐振器的厚度方向上具有间隙以形成所述悬翼结构；或者
所述底电极包括平直部以及在底电极的非电极连接端与所述平直部 相接的悬翼部，所述悬翼部在谐振器的厚度方向上与所述压电层的下表面间隔开以形成所述悬翼结构。
7、根据3所述的谐振器，其中：
所述底电极的非电极连接端直接形成所述桥结构；或者
所述底电极为平直电极，所述谐振器还包括桥部，所述桥部在水平方向上的内端在底电极的非电极连接端的下表面与底电极相接，所述桥部在水平方向上的外端与压电层相接，所述桥部限定所述桥结构；或者
所述底电极为平直电极，所述谐振器还包括桥部，所述桥部在水平方向上的内端与外端在底电极的非电极连接端的下表面均与底电极相接，所述桥部限定所述桥结构；或者
所述底电极为平直电极，所述底电极的下表面设置有覆盖所述底电极的位于谐振器的有效区域内的部分的桥层，所述桥层的外端与所述底电极的非电极连接端在谐振器的厚度方向上具有间隙以形成所述桥结构；或者
所述底电极包括平直部以及在底电极的非电极连接端与所述平直部相接的桥部，所述桥部在水平方向上的内端与平直部相接，所述桥部在水平方向上的外端与底电极相接，所述桥部限定所述桥结构。
8、根据1-7中任一项所述的谐振器，其中，所述底电极的非电极连接端的一部分和/或所述第一声学干涉结构的一部分被所述支撑结构覆盖。
9、根据1-7中任一项所述的谐振器，其中，所述底电极的非电极连接端和/或所述第一声学干涉结构在水平方向上与所述支撑结构间隔开。
10、根据1-9中任一项所述的谐振器，其中，所述顶电极为平直电极。
11、根据1-9中任一项所述的谐振器，其中，所述顶电极设置有第二声学干涉结构。
12、根据11所述的谐振器，其中，所述第二声学干涉结构设置在顶电极的非电极连接端的部分与所述第一声学干涉结构设置在底电极的非电极连接端的部分，关于垂直于谐振器的厚度方向的压电层中分面对称设置，或者关于谐振器的有效区域的中心中心对称布置。
13、一种滤波器，包括根据1-12中任一项所述的谐振器。
14、一种电子设备，包括根据1-12中任一项所述的谐振器，或者根据13所述的滤波器。
这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品， 以及手机、WIFI、无人机等终端产品。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (14)

  1. 一种体声波谐振器，包括：
    基底；
    压电层；
    声学镜；
    底电极；
    顶电极；和
    单晶压电层，设置在底电极与顶电极之间，
    其中：
    压电层的下表面与基底的上表面之间设置有支撑结构，压电层与基底大体平行布置；以及
    所述底电极设置有第一声学干涉结构。
  2. 根据权利要求1所述的谐振器，其中，所述第一声学干涉结构包括设置在底电极的悬翼结构、桥结构、凸起结构、凹陷结构中的至少一种。
  3. 根据权利要求2所述的谐振器，其中：
    所述底电极的非电极连接端设置有悬翼结构或桥结构；和/或
    所述底电极的电极连接端设置有桥结构。
  4. 根据权利要求3所述的谐振器，其中：
    所述底电极的非电极连接端还包括凸起结构和/或凹陷结构；和/或
    所述底电极的电极连接端还包括凸起结构和/或凹陷结构。
  5. 根据权利要求3所述的谐振器，其中：
    所述凸起结构的内边缘处于谐振器的有效区域的内侧；和/或
    所述凸起结构的外边缘处于谐振器的有效区域的外侧。
  6. 根据权利要求3所述的谐振器，其中：
    所述压电层的下侧设置有凹陷或沟槽，所述底电极的非电极连接端覆盖所述凹陷或沟槽的至少一部分以形成所述悬翼结构；或者
    所述底电极为平直电极，且所述底电极的非电极连接端在水平方向上延伸到压电层的外侧以形成所述悬翼结构；或者
    所述底电极为平直电极，且所述底电极的非电极连接端的下表面设置有仅部分覆盖所述底电极的位于谐振器的有效区域内的部分的悬翼部，所述悬 翼部自所述底电极的非电极连接端朝向内侧方向延伸以形成所述悬翼结构，或者所述悬翼部自所述底电极的非电极连接端朝向外侧方向延伸以形成所述悬翼结构；或者
    所述底电极为平直电极，且所述底电极的下表面设置有覆盖所述底电极的位于谐振器的有效区域内的部分的悬翼层，所述悬翼层的外端与所述底电极的非电极连接端在谐振器的厚度方向上具有间隙以形成所述悬翼结构；或者
    所述底电极包括平直部以及在底电极的非电极连接端与所述平直部相接的悬翼部，所述悬翼部在谐振器的厚度方向上与所述压电层的下表面间隔开以形成所述悬翼结构。
  7. 根据权利要求3所述的谐振器，其中：
    所述底电极的非电极连接端直接形成所述桥结构；或者
    所述底电极为平直电极，所述谐振器还包括桥部，所述桥部在水平方向上的内端在底电极的非电极连接端的下表面与底电极相接，所述桥部在水平方向上的外端与压电层相接，所述桥部限定所述桥结构；或者
    所述底电极为平直电极，所述谐振器还包括桥部，所述桥部在水平方向上的内端与外端在底电极的非电极连接端的下表面均与底电极相接，所述桥部限定所述桥结构；或者
    所述底电极为平直电极，所述底电极的下表面设置有覆盖所述底电极的位于谐振器的有效区域内的部分的桥层，所述桥层的外端与所述底电极的非电极连接端在谐振器的厚度方向上具有间隙以形成所述桥结构；或者
    所述底电极包括平直部以及在底电极的非电极连接端与所述平直部相接的桥部，所述桥部在水平方向上的内端与平直部相接，所述桥部在水平方向上的外端与底电极相接，所述桥部限定所述桥结构。
  8. 根据权利要求1-7中任一项所述的谐振器，其中，所述底电极的非电极连接端的一部分和/或所述第一声学干涉结构的一部分被所述支撑结构覆盖。
  9. 根据权利要求1-7中任一项所述的谐振器，其中，所述底电极的非电极连接端和/或所述第一声学干涉结构在水平方向上与所述支撑结构间隔开。
  10. 根据权利要求1-9中任一项所述的谐振器，其中，所述顶电极为平 直电极。
  11. 根据权利要求1-9中任一项所述的谐振器，其中，所述顶电极设置有第二声学干涉结构。
  12. 根据权利要求11所述的谐振器，其中，所述第二声学干涉结构设置在顶电极的非电极连接端的部分与所述第一声学干涉结构设置在底电极的非电极连接端的部分，关于垂直于谐振器的厚度方向的压电层中分面对称设置，或者关于谐振器的有效区域的中心中心对称布置。
  13. 一种滤波器，包括根据权利要求1-12中任一项所述的谐振器。
  14. 一种电子设备，包括根据权利要求1-12中任一项所述的谐振器，或者根据权利要求13所述的滤波器。
PCT/CN2022/088981 2021-04-27 2022-04-25 体声波谐振器、滤波器及电子设备 WO2022228384A1 (zh)

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