WO2022001861A1 - 设置插入层以提升功率的体声波谐振器、滤波器及电子设备 - Google Patents

设置插入层以提升功率的体声波谐振器、滤波器及电子设备 Download PDF

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WO2022001861A1
WO2022001861A1 PCT/CN2021/102315 CN2021102315W WO2022001861A1 WO 2022001861 A1 WO2022001861 A1 WO 2022001861A1 CN 2021102315 W CN2021102315 W CN 2021102315W WO 2022001861 A1 WO2022001861 A1 WO 2022001861A1
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resonator
layer
top electrode
insertion layer
edge
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PCT/CN2021/102315
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English (en)
French (fr)
Inventor
庞慰
郝龙
徐洋
张全德
马晓丹
杨清瑞
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诺思(天津)微系统有限责任公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques

Definitions

  • Embodiments of the present disclosure relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device.
  • filter devices such as filters and duplexers based on, for example, Film Bulk Acoustic Resonators (FBARs) have become more and more popular in the market.
  • FBARs Film Bulk Acoustic Resonators
  • ESD anti-electrostatic discharge
  • the present disclosure increases the power capacity of the resonator by increasing the local film thickness of the acoustic mirror edge of the resonator.
  • a bulk acoustic wave resonator comprising:
  • the resonator further includes a first insertion layer at the connection side of the top electrode, the first insertion layer is arranged between the top electrode and the substrate in the thickness direction of the resonator, and the edge of the acoustic mirror is in the lateral direction of the resonator.
  • the upper part is between the inner end and the outer end of the first insertion layer;
  • the resonator also includes a first non-conductive dielectric layer at the connection side of the top electrode, the first non-conductive dielectric layer is arranged between the first insertion layer and the top electrode in the thickness direction of the resonator, and the first non-conductive dielectric layer is The inner end of the dielectric layer is located inside the inner end of the first insertion layer in the transverse direction, and the outer end of the first non-conductive dielectric layer is flush with the outer end of the first insertion layer in the transverse direction or is in the first insertion layer the outer side of the outer end.
  • the resonator further includes a first non-conductive dielectric layer, and the first non-conductive dielectric layer is disposed between the first insertion layer and the top electrode in the thickness direction of the resonator at the connecting edge of the top electrode, and the The inner end of the first non-conductive dielectric layer is flush with the inner end of the first insertion layer in the lateral direction or is located inside the inner end of the first insertion layer, and the outer end of the first non-conductive dielectric layer is in the lateral direction The upper part is flush with the outer end of the first insertion layer or is outside the outer end of the first insertion layer.
  • Embodiments of the present disclosure also relate to a filter comprising the above-described bulk acoustic wave resonator.
  • Embodiments of the present disclosure also relate to an electronic device including the above-mentioned filter or resonator.
  • FIG. 1A is a schematic top view of a bulk acoustic wave resonator in the prior art
  • FIG. 1B is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present disclosure
  • Figure 2 is an exemplary cross-sectional view taken along A-A' in Figure 1A;
  • Fig. 3 is an exemplary cross-sectional view taken along B-B' in Fig. 1B;
  • FIG. 4 is a schematic diagram exemplarily showing that the power capacity of the resonator is improved based on the bulk acoustic wave resonator of the structure shown in FIG. 1B and FIG. 3 ;
  • 5A is a schematic top view of a bulk acoustic wave resonator according to another exemplary embodiment of the present disclosure
  • FIG. 5B is a schematic top view of a modified embodiment of the bulk acoustic wave resonator shown in FIG. 5A;
  • Figure 6 is an exemplary cross-sectional view taken along C-C' in Figure 5A;
  • FIG. 7 is a schematic cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present disclosure, wherein both the connecting side and the non-connecting side of the top electrode are provided with an intervening layer, and the intervening layer of the non-connecting side is in a lateral direction with the non-connecting edges of the top electrode are spaced apart from each other, wherein the interposer is disposed over the bottom electrode;
  • FIG. 8 is a schematic cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present disclosure, wherein both the connection side and the non-connection side of the top electrode are provided with intervening layers, and the top electrode is provided with cantilever and bridge structures;
  • FIG. 9 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present disclosure, wherein both the connection side and the non-connection side of the top electrode are provided with intervening layers, and the top electrode is provided with cantilever and bridge structures, and The resonator is provided with a raised structure arranged around the effective area of the resonator;
  • FIG. 10 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present disclosure, wherein both the connecting side and the non-connecting side of the top electrode are provided with an intervening layer, and the intervening layer of the non-connecting side is in a lateral direction with the non-connecting sides of the top electrode are spaced apart from each other, wherein the intervening layer is disposed below the bottom electrode;
  • FIG. 11 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present disclosure, wherein the connecting side and the non-connecting side of the top electrode are provided with an insertion layer, and a non-conductive dielectric layer is provided above the insertion layer. , the outer end of the non-conductive dielectric layer of the non-connecting edge of the top electrode is located inside the outer end of the corresponding insertion layer; and
  • FIG. 12 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present disclosure, wherein the connecting side and the non-connecting side of the top electrode are provided with an insertion layer, and a non-conductive dielectric layer is provided above the insertion layer. , the outer end of the non-conductive dielectric layer of the non-connecting side of the top electrode is located outside the outer end of the corresponding insertion layer.
  • Substrate, optional materials are single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc., or single crystal piezoelectric lining such as lithium niobate, lithium tantalate, potassium niobate, etc. end.
  • Bottom electrode (electrode pin or electrode connection edge), the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • Acoustic mirror which can be a cavity, or a Bragg reflector and other equivalent forms.
  • Piezoelectric layer which can be a single crystal piezoelectric material, optional, such as: single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal Potassium niobate, single crystal quartz film, or single crystal lithium tantalate and other materials can also be polycrystalline piezoelectric materials (corresponding to single crystal, non-single crystal materials), optional, such as polycrystalline aluminum nitride, Zinc oxide, PZT, etc., can also be a rare earth element doped material containing a certain atomic ratio of the above materials, for example, can be doped aluminum nitride, and doped aluminum nitride contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium
  • Top electrode (electrode pin or electrode connection edge), its material can be the same as the bottom electrode, and the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or above metals. composite or its alloys, etc.
  • the top and bottom electrode materials are generally the same, but can also be different.
  • the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite of the above metals or their alloys, etc., or aluminum nitride (AlN), oxide Piezoelectric materials such as zinc, PZT and other piezoelectric materials including rare earth element doped piezoelectric materials with a certain atomic ratio of the above materials, and can also be dielectric materials, such as silicon nitride (SiN), silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ) etc.
  • the surface dielectric layer of the top electrode, the material can be aluminum nitride, silicon nitride, silicon dioxide, aluminum oxide, etc.
  • the air gap above the layer In an optional embodiment, it may not be an air gap, but other non-conductive dielectric layers.
  • the raised layer above the piezoelectric layer the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a combination of the above metals or their alloys.
  • the material can be selected from SiO 2 , doped silicon dioxide, polysilicon, amorphous silicon and other materials.
  • FIG. 1A shows a top view of a conventional bulk acoustic wave resonator structure
  • FIG. 1B is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present disclosure.
  • the difference between Fig. 1B and Fig. 1A is that an insertion layer 106 is added on the basis of Fig. 1A, and the insertion layer can play a role of thickening. It can be seen from FIG. 1A and FIG. 1B that after the insertion layer 106 is provided, only the position of the connection side of the top electrode is changed, and the non-connection side of the top electrode has no change.
  • Fig. 1A Cut the resonator in Fig. 1A along the AA' direction to obtain its cross-sectional view, as shown in Fig. 2, which shows the sandwich structure of a common resonator, which includes a substrate 101, a bottom electrode 102, an acoustic mirror 103, Piezoelectric layer 104, top electrode 105, top electrode surface dielectric layer 107.
  • FIG. 3 The cross-sectional view of the resonator shown in FIG. 1B is cut along the direction of BB', as shown in FIG. 3.
  • the structure shown in FIG. 3 has an insertion layer 106 and an air gap 108 above the insertion layer.
  • an insertion layer can be set in the film to improve the mechanical strength of the overall film in the vertical direction of the position by increasing the thickness of the film, thereby resisting the mechanical fatigue loss caused by the position and prolonging the life of the device.
  • the insertion layer can also increase the heat dissipation volume. , which is beneficial to improve the power capacity of the device.
  • an intervening layer 106 may be provided between the bottom electrode and the piezoelectric layer, thereby ameliorating the severe mechanical fatigue that exists there.
  • the material of the insertion layer may be molybdenum.
  • the distance from the inner edge or inner end of the insertion layer 106 to the edge of the acoustic mirror 103 is a and the distance from the outer edge or outer end of the insertion layer 106 to the edge of the bottom electrode 102 is b, where a It must be greater than 0, that is, the insertion layer should extend to the inside of the resonator beyond the edge of the acoustic mirror 103, so that to the inside of the edge of the acoustic mirror, the minimum value of b can be 0, when the value of b is 0, the outer end of the insertion layer 106 Coinciding with the edge of the non-connecting side of the bottom electrode 102, at this time, the distance from the outer end of the insertion layer 106 extending out of the acoustic mirror is equal to the distance i that the bottom electrode extends out of the acoustic mirror, and the distance is greater than 0, that is, the insertion layer spans across The edge of the acous
  • a and b should not be too small, which will affect the effect of reducing mechanical fatigue and improving power capacity, but increasing the values of a and b will increase the occupied area of the resonator.
  • a and b are in the range of 0.2-10 ⁇ m.
  • the introduction of the insertion layer 106 under the piezoelectric layer will result in large steps at both ends, and the inner steps will exist in the effective area of the resonator as shown in FIG. 2 (as can be understood by those skilled in the art, as shown in FIG.
  • the effective area of the shown BAW resonator refers to the overlapping area of the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror of the resonator in the thickness direction of the resonator), and this step will cause the pressure of the resonator there.
  • the crystal orientation of the electrical layer 104 changes, which reduces the performance of the resonator, affects the quality factor or Q value of the resonator, makes it smaller, and even causes cracks or fractures in the piezoelectric layer, thereby affecting the stability of the top electrode. connection, eventually causing the resonator to fail.
  • the part of the insertion layer that falls in the effective area of the resonator as shown in Figure 2 will produce an impedance mismatch effect on the transverse acoustic wave, thereby affecting the transmission characteristics of the transverse wave at this interface, thereby affecting the electrical performance of the resonator, and the effect is good.
  • the bad is related to both the width and thickness of the insert layer falling into the acoustic mirror.
  • the conductive material when selected for the interposer 106, it extends the length of the bottom electrode on the substrate below the top electrode connecting edge (ie, increases the distance b on the original distance i), which will cause the top electrode and the bottom electrode to be separated.
  • the parasitic capacitance between them increases, which reduces the electromechanical coupling coefficient of the resonator, and the larger the value of the distance b is, the lower it is.
  • an air is also arranged above the piezoelectric layer 104.
  • the gap 108 is thus bounded by the active area of the resonator shown in FIG. 3 inside the air gap, so that the insertion layer 106 is outside the active area of the resonator.
  • the air gap 108 forms a non-conductive dielectric layer, but, as can be understood by those skilled in the art, the non-conductive dielectric layer is not limited to the air gap, and may also be a layer structure formed of other non-conductive dielectric materials .
  • c is the lateral distance between the inner edge or inner end of the air gap 108 above the interposer beyond the inner end of the interposer, and its value should be greater than 0 to eliminate the aforementioned step caused by the interposer 106 .
  • the performance of the resonator is degraded, including, for example, quality factor and electromechanical coupling coefficient degradation.
  • the quality factor of the resonator will vary with the change of c within a certain range, and in an optional embodiment, the value of c is in the range of 0.2 ⁇ m ⁇ 10 ⁇ m.
  • d is the lateral distance from the outer end of the air gap 108 above the insertion layer to the outer end of the insertion layer 106 , and the minimum value of d is 0 to eliminate the parasitic effect brought by the insertion layer 106 , especially at the edge.
  • Parasitic capacitance the larger the value of d, the smaller the parasitic capacitance between the top electrode and the bottom electrode, but the increase of the value of d will also increase the area of the resonator.
  • the value of d is in the range of 0.2 ⁇ 10 ⁇ m.
  • i is the lateral distance from the edge of the non-connected side of the bottom electrode 102 to the edge of the acoustic mirror 103 , and in an optional embodiment, it is in the range of 0.2 ⁇ 10 ⁇ m.
  • the thickness of the insertion layer can be In the range.
  • the thickness of the insertion layer as long as the insertion layer is set, the power of the resonator will be improved to a certain extent, but after reaching a certain thickness, because the place where the insertion layer is set is no longer the place where the strength of the resonator is weak, increase the power of the insertion layer. The thickness will not have too much effect on the power boost of the resonator.
  • an angle o exists between the inclined surface of the end of the insertion layer 106 and the bottom surface.
  • the included angle is less than 45 degrees.
  • FIG. 4 exemplarily shows the power capacity improvement diagram of the resonator shown in FIG. 3, wherein the material of the insertion layer is molybdenum (which can be the same as the top and bottom electrodes), and the thickness is The frequency of this resonator is 1866MHz.
  • the same of different sizes inserted into the resonator layer was provided, the power of the resonator has improved significantly, and the smaller the area the larger lift, to the area of 5000 ⁇ m 2, its power capacity increase 2.1dB, 5000 ⁇ m 2 or less for area, the power capacity of the resonator will be improved even more.
  • FIG. 5A is a schematic top view of a bulk acoustic wave resonator according to another exemplary embodiment of the present disclosure.
  • the insertion layer 106 exists not only on the connection side of the top electrode, but also exists on the other sides (ie, the non-connection side of the top electrode). Because the resonator is always damaged at its weakest point, when the insertion layer 106 is added to its weakest point, that is, the edge of the acoustic mirror at the top electrode connection side, its weakest link becomes the rest of the acoustic mirror edge without thickening. , so the power capacity of the resonator shown in FIG. 5A can be made larger by adding the insertion layer 106 also on the non-connecting side of the top electrode.
  • the cross-sectional view of the resonator can be obtained by cutting the resonator along the C-C' direction in Fig. 5A, as shown in Fig. 6 .
  • the step at the inner end of the insertion layer of the non-connecting side of the top electrode will also cause the crystal orientation of the piezoelectric layer to change, which will deteriorate the performance of the resonator. Therefore, e needs to be greater than 0 to ensure that this step falls within the effective area of the resonator. outside.
  • e needs to be greater than 0. In one embodiment of the present disclosure, the value of e is in the range of 0.2 ⁇ m-10 ⁇ m.
  • the top electrode 105 and the intervening layer 106 Due to the existence of e, that is, at the non-connecting edge of the top electrode, the top electrode 105 and the intervening layer 106 have no overlapping portion, so the newly added portion on the non-connecting edge side will not affect the resonator performance.
  • the g shown in FIG. 6 is the lateral distance from the outer edge or outer end of the insertion layer to the edge of the acoustic mirror.
  • the g value should be greater than 0, that is, the insertion layer 106 should cross the edge of the acoustic mirror 103, and the g value should not be too small, as it will affect the effect of increasing the power, and the g value will affect the area of the resonator.
  • the g value is in the range of 0.2 ⁇ m to 10 ⁇ m.
  • the outer edge or the outer end of the insertion layer at the connecting edge of the bottom electrode can also extend to be flush with the bottom electrode 102 or beyond the edge of the bottom electrode, thereby reducing the thickness of the electrode by increasing the thickness of the electrode.
  • resistor the top view of which is shown in Figure 5B.
  • the outer end of the insertion layer 106 on the non-connecting side of the top electrode and the bottom electrode may not exceed the edge of the non-connecting side of the bottom electrode 102 in the lateral direction, as shown in FIG. 5A , may also exceed the edge of the bottom electrode 102 , as shown in FIG. 5B , which is similar to the positional relationship between the insertion layer and the bottom electrode at the connecting edge of the top electrode in FIG. 6 .
  • h is the overlapping part of the insertion layer 106 and the acoustic mirror 103 at the non-connecting edge of the top electrode. Similar to the value of g, h is greater than 0, that is, the insertion layer 106 has to cross the edge of the acoustic mirror 103, and the value of h is too high. A small value will affect the effect of boosting power, and a too large value will affect the area of the resonator. In one embodiment of the present disclosure, the value of h is in the range of 0.2 ⁇ m-10 ⁇ m.
  • the insertion layers 106 on the connecting side and the non-connecting side of the top electrode are arranged in the same layer.
  • the same-layer arrangement refers to being between the same layers in the thickness direction of the resonator so that it can be deposited or arranged in the same step in the process of fabricating the resonator.
  • the insertion layers 106 on the connection side and the non-connection side of the top electrode may also be arranged in different layers.
  • FIG. 6 the structure on the side of the connection side of the top electrode is the same as that shown in FIG. 3 .
  • FIG. 7 is a schematic cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present disclosure
  • both the connection side and the non-connection side of the top electrode are provided with intervening layers, and the intervening layer of the non-connecting side is in the The non-connecting edges to the top electrode in the lateral direction are spaced apart from each other, wherein the interposer layer is disposed above the bottom electrode.
  • the structure shown in FIG. 7 is similar to the structure shown in FIG. 6.
  • the edge of the bottom electrode 102 at the connection edge of the top electrode exceeds the insertion layer 106, and the distance of the excess part is defined as b', and its value is 0.2-10 ⁇ m In the range.
  • l is the connecting edge of the insertion layer 106 at the top electrode, which is the distance beyond the edge of the acoustic mirror 103 .
  • FIG. 8 is a schematic cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present disclosure.
  • both the connecting side and the non-connecting side of the top electrode are provided with an insertion layer, and the non-connecting side of the top electrode is provided with a cantilever structure, thereby further improving the electrical performance of the resonator.
  • the active area boundary of the device is defined by the inner edge of the air gap 108 .
  • f is the lateral distance between the inner end of the air gap 108 above the top electrode non-connecting edge insertion layer and the inner end of the insertion layer 106, similar to c, which may be in the range of 0.2 ⁇ m-10 ⁇ m. Since f is set to be greater than 0, so that the insertion layer always falls outside the effective area, the performance of the non-connecting edge side basically does not decrease due to the newly added insertion layer 106 .
  • FIG. 8 the structure on the side of the connection side of the top electrode is the same as that shown in FIG. 3 .
  • the air gaps 108 on the connecting side and the non-connecting side of the top electrode are arranged in the same layer.
  • the two may also be arranged in different layers.
  • FIG. 9 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present disclosure, wherein both the connecting side and the non-connecting side of the top electrode are provided with intervening layers, and the connecting side and the non-connecting side of the top electrode and the top electrode are With cantilever and bridge structures, respectively, the active area boundary of the resonator is defined by the inner edge of the air gap 108 .
  • the structure shown in FIG. 9 differs from the structure shown in FIG. 8 in that, in FIG. 9 , the resonator is provided with raised structures 109 arranged around the active area of the resonator. In FIG. 9 , the raised structures 109 cover at least the entire corresponding air gap 108 .
  • FIG. 10 is a schematic cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present disclosure.
  • both the connecting side and the non-connecting side of the top electrode are provided with intervening layers, and the intervening layers of the non-connecting side are spaced apart from each other in the lateral direction from the non-connecting side of the top electrode.
  • the embodiment shown in FIG. 10 differs from the structure shown in FIG. 6 in that in FIG.
  • FIG. 11 is a schematic cross-sectional view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present disclosure.
  • both the connecting side and the non-connecting side of the top electrode are provided with intervening layers, and above the intervening layers are provided with intervening layers.
  • Non-conductive dielectric layer or air gap 108 is provided in FIG. 11 .
  • the structure shown in FIG. 11 is similar to the structure shown in FIG. 7, except that in FIG. 11, a non-conductive dielectric layer or air gap 108 is provided between the piezoelectric layer 104 and the insertion layer 106, and the non-connection of the top electrode is side, is also provided with a non-conductive dielectric layer or an air gap, in FIG.
  • the non-conductive dielectric layer or the outer end of the air gap of the non-connecting side of the top electrode is in the inner side of the outer end of the corresponding insertion layer, and is in the top electrode non-connecting The outside of the end, i.e. the distance j is greater than 0.
  • FIG. 12 is a schematic cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present disclosure.
  • both the connection side and the non-connection side of the top electrode are provided with an insertion layer, and a non-conductive medium layer or an air gap 108 is arranged above the insertion layer.
  • 12 is similar in structure to FIG. 11 , the difference is that in FIG. 12 , the outer ends of the non-conductive dielectric layer or the air gap of the non-connecting side of the top electrode are outside the outer ends of the corresponding intervening layers, in other words, in FIG. 12 , the air gap completely covers the insertion layer 106 on the non-connecting side of the top electrode.
  • k is the lateral distance at the non-connecting edge of the top electrode, the outer end of the air gap exceeds the outer end of the insertion layer, and its value is too large to affect the area of the resonator.
  • the value of k Values are in the range of 0.2 ⁇ m-10 ⁇ m.
  • the insertion layer 106 is disposed between the piezoelectric layer and the substrate, but the present disclosure is not limited thereto. Although it is not shown, as can be understood by those skilled in the art, the insertion layer may also be disposed on the top. Between the electrode and the substrate, for example, it can be arranged between the top electrode and the piezoelectric layer. Correspondingly, an air gap can be arranged between the insertion layer and the top electrode. For another example, it can be arranged in the piezoelectric layer. Correspondingly, An air gap may be provided between the piezoelectric layer and the top electrode, all of which are within the scope of the present disclosure.
  • the interposition layer is located between two parts in the thickness direction, which means as long as at least a part of the interposition layer is located in the thickness direction above one part and the other of the two parts in the thickness direction below the parts.
  • each numerical range except that it is explicitly stated that it does not include the endpoint value, may be the endpoint value, but also the middle value of each numerical range, and these are all within the protection scope of the present disclosure. .
  • upper and lower are relative to the bottom surface of the base of the resonator, and for a component, the side close to the bottom surface is the lower side, and the side away from the bottom surface is the upper side.
  • inner and outer are relative to the center of the effective area of the resonator in the lateral direction or radial direction
  • the side or end of a component close to the center is the inner or inner end
  • the component The side or end away from the center is the outer or outer end.
  • being located inside the location means being between the location and the center in the lateral or radial direction
  • being located outside of the location means being farther from the location in the lateral or radial direction than the location is center.
  • bulk acoustic wave resonators may be used to form filters or electronic devices.
  • the electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.
  • a bulk acoustic wave resonator comprising:
  • the resonator also includes a first insertion layer at the connection side of the top electrode, the first insertion layer is arranged between the top electrode and the substrate in the thickness direction of the resonator, and the edge of the acoustic mirror is in the lateral direction of the resonator. the upper part is between the inner end and the outer end of the first insertion layer;
  • the resonator also includes a first non-conductive dielectric layer at the connection side of the top electrode, the first non-conductive dielectric layer is arranged between the first insertion layer and the top electrode in the thickness direction of the resonator, and the first non-conductive dielectric layer is The inner end of the dielectric layer is located inside the inner end of the first insertion layer in the transverse direction, and the outer end of the first non-conductive dielectric layer is flush with the outer end of the first insertion layer in the transverse direction or is in the first insertion layer the outer side of the outer end;
  • the first intervening layer is positioned below the piezoelectric layer or positioned above the piezoelectric layer without being disposed in the same layer as the piezoelectric layer.
  • the lateral distance between the inner end of the first non-conductive dielectric layer and the inner end of the first insertion layer is in the range of 0.2 ⁇ m-10 ⁇ m; and/or
  • the lateral distance between the inner and/or outer end of the first insertion layer and the edge of the acoustic mirror is in the range of 0.2 ⁇ m-10 ⁇ m.
  • the projection of the non-connection side of the first insertion layer and the bottom electrode in the thickness direction of the resonator has an overlapping portion.
  • the outer end of the first insertion layer is outside the edge of the non-connecting side of the bottom electrode and the distance from the edge of the non-connecting side of the bottom electrode in the lateral direction is in the range of 0.2 ⁇ m-10 ⁇ m.
  • the edge of the non-connecting side of the bottom electrode is between the inner and outer ends of the first interposer in the lateral direction of the resonator;
  • the distance between the outer end of the first non-conductive dielectric layer and the outer end of the first insertion layer in the lateral direction is in the range of 0.2 ⁇ m-10 ⁇ m.
  • the edge of the non-connecting side of the bottom electrode is outside the outer end of the first intercalation layer in the lateral direction of the resonator;
  • the outer end of the first non-conductive dielectric layer is outside the outer end of the non-connecting edge of the bottom electrode and the distance from the outer end of the non-connecting edge of the bottom electrode in the lateral direction is in the range of 0.2 ⁇ m-10 ⁇ m Inside.
  • the first insertion layer is located between the bottom electrode and the substrate, or the first insertion layer is located between the bottom electrode and the piezoelectric layer, or the first insertion layer is located between the piezoelectric layer between the layer and the top electrode; or
  • the first insertion layer is located in the piezoelectric layer.
  • the first non-conductive dielectric layer is disposed between the first insertion layer and the piezoelectric layer in the thickness direction;
  • the first non-conductive dielectric layer is disposed between the piezoelectric layer and the top electrode in the thickness direction.
  • the resonator further includes a second insertion layer disposed on the non-connecting side of the top electrode, where the edge of the acoustic mirror is located between the inner end and the outer end of the second insertion layer in the lateral direction.
  • the inner end of the second insertion layer is spaced apart from the non-connecting edge of the top electrode in the lateral direction.
  • the distance between the inner end of the second insertion layer and the non-connecting edge of the top electrode in the lateral direction is in the range of 0.2 ⁇ m to 10 ⁇ m.
  • the edge of the non-connecting side of the top electrode is located outside the inner end of the second insertion layer in the lateral direction;
  • the resonator further includes a second non-conductive dielectric layer, and the inner end of the second non-conductive dielectric layer is located inside the inner end of the second insertion layer in the lateral direction.
  • the non-connecting side of the top electrode is provided with a cantilever, and the second non-conductive medium layer is a void layer for forming the cantilever.
  • the connecting side of the top electrode is provided with a bridge structure
  • the first non-conductive medium layer is a void layer for forming the bridge structure
  • the first non-conductive medium layer and the second non-conductive medium layer are arranged in the same layer.
  • the resonator further includes a protruding structure disposed around the effective area of the resonator, the protruding structure is disposed above the corresponding non-conductive dielectric layer and completely covers the corresponding non-conductive dielectric layer.
  • the first non-conductive dielectric layer is disposed between the piezoelectric layer and the first insertion layer in the thickness direction
  • the second non-conductive dielectric layer is disposed between the piezoelectric layer and the second insertion layer in the thickness direction
  • the outer end of the second non-conductive dielectric layer is outside the non-connecting edge of the top electrode in the lateral direction.
  • the second non-conductive dielectric layer covers the entire second insertion layer in the lateral direction.
  • the distance between the inner end and/or the outer end of the second insertion layer in the lateral direction and the edge of the acoustic mirror is in the range of 0.2 ⁇ m-10 ⁇ m.
  • the second insertion layer is disposed on the same layer as the first insertion layer.
  • the first insertion layer and the second insertion layer form an annular insertion layer.
  • the edge of the non-connecting side of the bottom electrode is between the inner end and the outer end of the first insertion layer in the lateral direction of the resonator;
  • the edge of the non-connecting side of the bottom electrode is outside the outer end of the first insertion layer in the lateral direction of the resonator.
  • the thickness of the insertion layer is In the range.
  • the edge angle of the bottom of the insertion layer is less than 45°.
  • a filter comprising the resonator of any of 1-23.
  • An electronic device comprising the filter according to 24 or the resonator according to any one of 1-23.
  • the electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.

Abstract

本公开涉及一种体声波谐振器，包括基底；声学镜；底电极；顶电极；和压电层，其中：所述谐振器在顶电极的连接边还包括第一插入层，第一插入层在谐振器的厚度方向上设置在顶电极与基底之间，且所述声学镜的边缘在谐振器的横向方向上处于第一插入层的内端与外端之间；所述谐振器在顶电极的连接边还包括第一不导电介质层，第一不导电介质层在谐振器的厚度方向上设置在第一插入层与顶电极之间，所述第一不导电介质层的内端在横向方向上位于第一插入层的内端的内侧，所述第一不导电介质层的外端在横向方向上与第一插入层的外端齐平或者处于第一插入层的外端的外侧。本公开还涉及一种滤波器以及一种电子设备。

Description

设置插入层以提升功率的体声波谐振器、滤波器及电子设备 技术领域
本公开的实施例涉及半导体领域，尤其涉及一种体声波谐振器，一种具有该谐振器的滤波器，以及一种电子设备。
背景技术
随着当今无线通讯技术的飞速发展，小型化便携式终端设备的应用也日益广泛，因而对于高性能、小尺寸的射频前端模块和器件的需求也日益迫切。近年来，以例如为薄膜体声波谐振器(Film Bulk Acoustic Resonator，简称FBAR)为基础的滤波器、双工器等滤波器件越来越为市场所青睐。一方面是因为其插入损耗低、过渡特性陡峭、选择性高、功率容量高、抗静电放电(ESD)能力强等优异的电学性能，另一方面也是因为其体积小、易于集成的特点所致。
体声波谐振器的高频化和高功率化是发展趋势。但是，随着谐振器的频率不断增大，谐振器的底电极的厚度会逐渐变小，这导致随着谐振器的功率容量的提升，容易出现谐振器的膜层因为机械疲劳而失效的情况，从而阻止了谐振器功率的进一步提升。
发明内容
本公开通过增大谐振器的声学镜边缘的局部膜层厚度，来增大谐振器的功率容量。
根据本公开的实施例的一个方面，提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极；
顶电极；和
压电层，
其中：
所述谐振器在顶电极的连接边还包括第一插入层，第一插入层在谐振器的厚度方向上设置在顶电极与基底之间，且所述声学镜的边缘在谐振器 的横向方向上处于第一插入层的内端与外端之间；
所述谐振器在顶电极的连接边还包括第一不导电介质层，第一不导电介质层在谐振器的厚度方向上设置在第一插入层与顶电极之间，所述第一不导电介质层的内端在横向方向上位于第一插入层的内端的内侧，所述第一不导电介质层的外端在横向方向上与第一插入层的外端齐平或者处于第一插入层的外端的外侧。
可选的，所述谐振器还包括第一不导电介质层，第一不导电介质层在顶电极的连接边在谐振器的厚度方向上设置在第一插入层与顶电极之间，所述第一不导电介质层的内端在横向方向上与所述第一插入层的内端齐平或者位于第一插入层的内端的内侧，所述第一不导电介质层的外端在横向方向上与第一插入层的外端齐平或者处于第一插入层的外端的外侧。
本公开的实施例也涉及一种滤波器，包括上述体声波谐振器。
本公开的实施例还涉及一种电子设备，包括上述的滤波器或者谐振器。
附图说明
以下描述与附图可以更好地帮助理解本公开所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
以下描述与附图可以更好地帮助理解本公开所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1A为现有技术中的体声波谐振器的俯视示意图；
图1B为根据本公开的一个示例性实施例的体声波谐振器的俯视示意图；
图2为沿图1A中的A-A’截得的示例性截面图；
图3为沿图1B中的B-B’截得的示例性截面图；
图4为示例性示出基于图1B和图3所示结构的体声波谐振器，谐振器的功率容量提升的示意图；
图5A为根据本公开的另一个示例性实施例的体声波谐振器的俯视示意图；
图5B为图5A所示的体声波谐振器的一个变形实施例的俯视示意图；
图6为沿图5A中的C-C’截得的示例性截面图；
图7为根据本公开的又一个示例性实施例的体声波谐振器的截面示意图，其中顶电极的连接边与非连接边均设置有插入层，且非连接边的插入层在横向方向上与顶电极的非连接边彼此间隔开，其中插入层设置在底电极的上方；
图8为根据本公开的再一个示例性实施例的体声波谐振器的截面示意图，其中顶电极的连接边与非连接边均设置有插入层，且顶电极设置有悬翼和桥结构；
图9为根据本公开的再一个示例性实施例的体声波谐振器的截面示意图，其中顶电极的连接边与非连接边均设置有插入层，且顶电极设置有悬翼和桥结构，且谐振器设置有绕谐振器的有效区域设置的凸起结构；
图10为根据本公开的还一个示例性实施例的体声波谐振器的截面示意图，其中顶电极的连接边与非连接边均设置有插入层，且非连接边的插入层在横向方向上与顶电极的非连接边彼此间隔开，其中插入层设置在底电极的下方；
图11为根据本公开的再一个示例性实施例的体声波谐振器的截面示意图，其中顶电极的连接边与非连接边均设置有插入层，且插入层的上方均设置有不导电介质层，顶电极的非连接边的不导电介质层的外端处于对应插入层的外端的内侧；以及
图12为根据本公开的再一个示例性实施例的体声波谐振器的截面示意图，其中顶电极的连接边与非连接边均设置有插入层，且插入层的上方均设置有不导电介质层，顶电极非连接边的不导电介质层的外端处于对应的插入层的外端的外侧。
具体实施方式
下面通过实施例，并结合附图，对本公开的技术方案作进一步具体的说明。下述参照附图对本公开实施方式的说明旨在对本公开的总体公开构思进行解释，而不应当理解为对本公开的一种限制。
首先，本公开的附图中的附图标记说明如下：
101:基底，可选材料为单晶硅、氮化镓、砷化镓、蓝宝石、石英、碳化硅、金刚石等，也可以是铌酸锂、钽酸锂、铌酸钾等单晶压电衬底。
102：底电极(电极引脚或电极连接边)，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。
103：声学镜,可为空腔，也可采用布拉格反射层及其他等效形式。
104：压电层，可以为单晶压电材料，可选的，如：单晶氮化铝、单晶氮化镓、单晶铌酸锂、单晶锆钛酸铅(PZT)、单晶铌酸钾、单晶石英薄膜、或者单晶钽酸锂等材料，也可以为多晶压电材料(与单晶相对应，非单晶材料)，可选的，如多晶氮化铝、氧化锌、PZT等，还可是包含上述材料的一定原子比的稀土元素掺杂材料，例如可以是掺杂氮化铝，掺杂氮化铝至少含一种稀土元素，如钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。
105：顶电极(电极引脚或电极连接边)，其材料可与底电极相同，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。顶电极和底电极材料一般相同，但也可以不同。
106：插入层，材料可选钼，钌，金，铝，镁，钨，铜，钛，铱，锇，铬或以上金属的复合或其合金等，也可以是氮化铝(AlN)，氧化锌，PZT等压电材料并包含上述材料的一定原子比的稀土元素掺杂压电材料，还可以是介质材料，如氮化硅(SiN)、二氧化硅(SiO 2)、氧化铝(Al 2O 3)等。
107：顶电极的表面介质层，材料可以是氮化铝、氮化硅、二氧化硅、氧化铝等。
108：插入层上方空气隙。在可选的实施例中，也可以不是空气隙，而是其他的不导电介质层。
109：压电层上方凸起层：材料可选钼，钌，金，铝，镁，钨，铜，钛，铱，锇，铬或以上金属的符合或其合金等。
110：牺牲层，材料可选SiO 2，掺杂二氧化硅，多晶硅，非晶硅等材料。
图1A所示为常规的体声波谐振器结构的俯视图，图1B为根据本公开的一个示例性实施例的体声波谐振器的俯视示意图。图1B与图1A不同的是，在图1A的基础上增加了插入层106，插入层可以起到加厚的作 用。从图1A和图1B可以看到，在设置了插入层106之后，仅有顶电极的连接边的位置有变化，顶电极的非连接边没有任何改变。
将图1A谐振器沿着AA’方向剖开，可以得到其剖面图，如图2所示，图2示出了普通谐振器的三明治结构，其中包含基底101、底电极102，声学镜103、压电层104、顶电极105、顶电极表面介质层107。
将图1B谐振器沿着BB’的方向剖开，可以得到其剖面图，如图3所示，图3所示的结构相对于普通谐振器多了插入层106和插入层上方的空气隙108。在谐振器工作时，相比于顶电极非连接边，顶电极连接边处的各层薄膜中均存在不同严重程度的机械疲劳，即在谐振器振动过程中该处会产生较强的拉伸，可以在薄膜中设置插入层从而通过增加薄膜厚度来提高该位置垂直方向上整体薄膜的机械强度，进而抵抗该位置产生的机械疲劳损耗，延长器件寿命，同时，插入层还能够增大散热体积，有利于提高器件功率容量。例如，在图3中，可以在底电极与压电层之间设置插入层106，从而改善该处存在的严重机械疲劳。在一个实施例中，插入层的材料可以是钼。
如图3所示，在横向尺寸上，插入层106的内边缘或内端到声学镜103边缘的距离为a和插入层106的外边缘或外端到底电极102的边缘距离为b，其中a必须大于0，即插入层要向谐振器内侧延伸超过声学镜103的边缘，从而到声学镜的边缘的内侧，b的最小值可以是0，当b值为0时，插入层106的外端与底电极102的非连接边的边缘重合，此时插入层106的外端延伸出声学镜的距离等于底电极延伸出声学镜的距离i，该距离大于0，即，插入层横跨声学镜的边缘。
a和b的值不宜过小，过小会影响减小机械疲劳提升功率容量的效果，但是a和b值增大会增大谐振器的占用面积。在可选的实施例中，a和b在0.2～10μm的范围内。
在压电层下方引入插入层106会导致其两端产生较大台阶，其内端台阶会存在于如图2所示的谐振器的有效区域(如本领域技术人员能够理解的，图2所示的体声波谐振器的有效区域指该谐振器的顶电极、压电层、底电极和声学镜在谐振器的厚度方向上的重叠区域)以内，该台阶会导致该处的谐振器的压电层104的晶向发生变化，使谐振器性能下降，影响谐 振器的质量因子或Q值，使其变小，甚至会导致压电层在该处产生裂纹或断裂，从而影响顶电极的稳定连接，最终造成谐振器失效。另一方面，落在如图2所示谐振器有效区域的插入层部分会对横向声波产生阻抗不匹配效果，从而影响横波在此界面的传输特性，从而影响谐振器的电学性能，其效果好坏与插入层落入声学镜的宽度以及厚度均有关。此外，当插入层106选择导电材料时，其延长了在顶电极连接边下方衬底上的底电极长度(即在原有的距离i上增加了距离b)，从而会导致顶电极与底电极之间的寄生电容增大，降低谐振器的机电耦合系数，且距离b的值越大降低约多。
因此，为了保证插入层106的设置对功率容量的提高效果，且同时为了降低由于插入层106的设置对谐振器其余电学性能的影响，本公开中，在压电层104上方还设置有一个空气隙108，从而将图3所示的谐振器的有效区域边界限定在空气隙内侧，使得插入层106在谐振器的有效区域的外侧。
在图示的实施例中，空气隙108形成不导电介质层，但是，如本领域技术人员能够理解的，不导电介质层不限于空气隙，还可以是其他的不导电介质材料形成的层结构。
如图3所示，c为插入层上方的空气隙108的内边缘或内端超过插入层内端的横向距离，其值要大于0，以消除前面提到的由于插入层106带来的台阶导致的谐振器的性能下降，例如包括质量因子和机电耦合系数下降。另外，谐振器的质量因子在一定范围内会随着c的变化而变化，在可选的实施例中，c的值在0.2μm～10μm的范围内。
如图3所示，d为插入层上方的空气隙108的外端超过插入层106外端的横向距离，d值最小为0，以将插入层106带来的寄生影响消除，尤其是边缘处的寄生电容，d的值越大，顶电极与底电极之间的寄生电容就越小，但是d的值增大也会增大谐振器的面积。在本公开的一个实施例中，d的值在0.2～10μm的范围内。
如图3所示，i为底电极102的非连接边的边缘到声学镜103的边缘的横向距离，在可选的实施例中，其在0.2～10μm的范围内。
在本公开的一个实施例中，根据不同的频率，插入层的厚度可以在
Figure PCTCN2021102315-appb-000001
的范围内。对于插入层的厚度，只要设置插入层，都会对谐振器的功率有一定提升，但是达到某一个厚度之后，因为设置插入层的地方已经不是谐振器的强度较弱的地方，再增加插入层的厚度就不会对谐振器的功率提升有过多的影响。
如图3所示，插入层106的端部的斜面与底面之间存在夹角o，可选的，该夹角小于45度。
图4示例性示出了图3所示的谐振器的功率容量提升图，其中插入层的材料为钼(可以与顶电极和底电极材料相同)，厚度为
Figure PCTCN2021102315-appb-000002
该谐振器的频率为1866MHz。从图4可以看到，不同面积谐振器设置相同插入层后，谐振器的功率有明显提升，且面积越小提升越大，对于5000μm 2的面积，其功率容量提升2.1dB，对于5000μm 2以下面积，对谐振器的功率容量提升会更大。
图5A为根据本公开的另一个示例性实施例的体声波谐振器的俯视示意图。如图5A所示，插入层106不仅仅存在于顶电极的连接边，其余各边(即顶电极的非连接边)都有存在。因为谐振器总是在其最为薄弱处损坏，当将其最薄弱处即顶电极连接边的声学镜边缘位置增加了插入层106之后，其最薄弱环节就变为其余没有加厚的声学镜边缘，因此图5A所示的谐振器的功率容量，会因为在顶电极的非连接边也增加了插入层106而可以变得更大。
沿着图5A中的C-C’方向把谐振器剖开，可以得到其剖面图，如图6所示。顶电极105的非连接边的边缘或端部与顶电极非连接边一侧的插入层之间在横向方向上存在一定距离，如图6中为e。此时，顶电极非连接边的插入层内端的台阶也会引起压电层晶向变化，从而使谐振器性能变差，因此需要使e大于0，从而保证这一台阶落在谐振器有效区域外侧。另一方面，插入层如果与顶电极在厚度方向上的投影有重叠，会在谐振器有效区域(被空气隙内侧限定的顶电极、底电极与声学镜的重叠区域)内产生声阻抗不匹配界面，从而影响谐振器电学性能，因此，为了保证插入层106的设置对功率容量的提高效果，且同时为了降低由于插入层106的设置对谐振器其余电学性能的影响，需要使e大于0。在本公开的一个实施例中，e的值在0.2μm-10μm的范围内。由于e的存在，即在顶电 极非连接边处，顶电极105与插入层106没有重叠部分，所以在非连接边一侧新加的部分不会影响谐振器性能。
图6中所示的g为插入层的外边缘或外端到声学镜边缘的横向距离。g值要大于0，即插入层106要跨过声学镜103的边缘，且g值不宜过小，过小会影响提升功率的效果，g值太大会影响谐振器的面积，在本公开的一个实施例中，g值在0.2μm-10μm的范围内。当插入层106为导电材料时，底电极连接边处的插入层的外边缘或外端还可以延伸到与底电极102齐平或超过底电极的边缘，从而通过增加电极厚度而减小电极的电阻，其俯视图如图5B所示。
另外，在顶电极及底电极的非连接边的插入层106的外端在横向方向上可以不超过底电极102的非连接边的边缘，如图5A所示，也可以超过底电极102的边缘，如图5B所示，与图6中顶电极连接边处插入层与底电极的位置关系相似。
图6中h为插入层106在顶电极非连接边处与声学镜103的重叠部分，与g的值类似，h要大于0，即插入层106要跨过声学镜103的边缘，h值太小会影响提升功率的效果，其值太大会影响谐振器的面积，在本公开的一个实施例中，h值在0.2μm-10μm的范围内。
如图6所示，在顶电极的连接边与非连接边的插入层106为同层布置。在本公开中，同层布置是指在谐振器的厚度方向上，处于相同的层之间从而在制作谐振器的过程中可以在同一步骤中沉积或者设置。
在本公开中，在顶电极的连接边与非连接边的插入层106也可以非同层布置。
在图6中，顶电极连接边一侧的结构与图3所示的结构相同。
如能够理解的，图6与图3中用于标示距离的字母，在字母相同的情况下，具有相同或相似的含义。
图7为根据本公开的又一个示例性实施例的体声波谐振器的截面示意图，在图7中，顶电极的连接边与非连接边均设置有插入层，且非连接边的插入层在横向方向上与顶电极的非连接边彼此间隔开，其中插入层设置在底电极的上方。图7所示的结构与图6所示的结构相似，在图7中，在顶电极连接边处的底电极102边缘超出插入层106，超出部分距离定义 为b’,其值在0.2-10μm的范围内。另外，在图7中，l为插入层106在顶电极的连接边，超出声学镜103边缘的距离，其值与g值类似，可以在0.2μm-10μm的范围内。
如能够理解的，图7与图3和6中用于标示距离的字母，在字母相同的情况下，具有相同或相似的含义。
图8为根据本公开的再一个示例性实施例的体声波谐振器的截面示意图。相比于图7，在图8中，顶电极的连接边与非连接边均设置有插入层，且顶电极非连接边设置有悬翼结构，从而进一步提高谐振器电学性能，此时，谐振器的有效区域边界被空气隙108的内边缘所限定。在图8中，f为顶电极非连接边插入层上方的空气隙108的内端与插入层106的内端之间的横向距离，与c类似，可以在0.2μm-10μm的范围内。因为设置f大于0，使得插入层始终落在有效区域的外侧，所以非连接边一侧基本不会因为新增加的插入层106导致性能下降。
在图8中，顶电极连接边一侧的结构与图3所示的结构相同。
在图8中，在顶电极的连接边与非连接边的空气隙108为同层布置。但是，在可选的实施例中，两者也可以非同层布置。
如能够理解的，图8与图3和6-7中用于标示距离的字母，在字母相同的情况下，具有相同或相似的含义。
图9为根据本公开的再一个示例性实施例的体声波谐振器的截面示意图，其中顶电极的连接边与非连接边均设置有插入层，且顶电极顶电极的连接边和非连接边分别设置有悬翼和桥结构，此时，谐振器的有效区域边界被空气隙108的内边缘所限定。图9所示的结构与图8所示的结构的不同在于，在图9中，谐振器设置有绕谐振器的有效区域设置的凸起结构109。在图9中，凸起结构109至少覆盖整个对应的空气隙108。
如能够理解的，图9与图3和6-8中用于标示距离的字母，在字母相同的情况下，具有相同或相似的含义。
图10为根据本公开的还一个示例性实施例的体声波谐振器的截面示意图。在图10中，顶电极的连接边与非连接边均设置有插入层，且非连接边的插入层在横向方向上与顶电极的非连接边彼此间隔开。图10所示实施例与图6中所示结构的不同在于，在图10中，插入层106设置在底 电极102的下方。
如能够理解的，图10与图3和6-9中用于标示距离的字母，在字母相同的情况下，具有相同或相似的含义。
图11为根据本公开的再一个示例性实施例的体声波谐振器的截面示意图，在图11中，顶电极的连接边与非连接边均设置有插入层，且插入层的上方均设置有不导电介质层或空气隙108。图11所示的结构与图7所示的结构相似，不同在于，在图11中，不导电介质层或空气隙108设置在压电层104与插入层106之间，在顶电极的非连接边，也设置有不导电介质层或空气隙，在图11中，顶电极的非连接边的不导电介质层或空气隙的外端处于对应插入层的外端的内侧，且处于顶电极非连接端的外侧，即距离j大于0。
如能够理解的，图11与图3和6-10中用于标示距离的字母，在字母相同的情况下，具有相同或相似的含义。
图12为根据本公开的再一个示例性实施例的体声波谐振器的截面示意图。在图12中，顶电极的连接边与非连接边均设置有插入层，且插入层的上方均设置有不导电介质层或空气隙108。图12与图11结构相似，不同之处在于，在图12中，顶电极非连接边的不导电介质层或空气隙的外端处于对应的插入层的外端的外侧，换言之，在图12中，空气隙完全覆盖住在顶电极的非连接边的插入层106。
如图12所示，k为在顶电极的非连接边，空气隙的外端超出插入层的外端的横向距离，其值过大会影响谐振器的面积，在可选的实施例中，k的值在0.2μm-10μm的范围内。
综上所述，通过在谐振器比较薄弱的边缘位置增大薄膜厚度，可以使其抗机械疲劳的能力更强，同时还可以增大散热面积，进而实现更长的器件寿命和更高的功率容量。在本公开的上述实施例中，插入层106设置在压电层与基底之间，但是本公开不限于此，虽然没有示出，如本领域技术人员能够理解的，插入层也可以设置在顶电极与基底之间，例如可以设置在顶电极与压电层之间，相应的，空气隙可设置在该插入层与顶电极之间，再如，可以设置在压电层内，相应的，空气隙可设置在压电层与顶电极之间，这些方案均在本公开的保护范围之内。
在本公开中，插入层在厚度方向上位于两个部件之间，表示只要插入层的至少一部分在厚度方向上的位置在该厚度方向上处于该两个部件中的一个部件之上和另一个部件之下即可。
需要指出的是，在本公开中，各个数值范围，除了明确指出不包含端点值之外，除了可以为端点值，还可以为各个数值范围的中值，这些均在本公开的保护范围之内。
在本公开中，上和下是相对于谐振器的基底的底面而言的，对于一个部件，其靠近该底面的一侧为下侧，远离该底面的一侧为上侧。
在本公开中，内和外是相对于谐振器的有效区域的中心在横向方向或者径向方向上而言的，一个部件的靠近该中心的一侧或一端为内侧或内端，而该部件的远离该中心的一侧或一端为外侧或外端。对于一个参照位置而言，位于该位置的内侧表示在横向方向或径向方向上处于该位置与该中心之间，位于该位置的外侧表示在横向方向或径向方向上比该位置更远离该中心。
如本领域技术人员能够理解的，根据本公开的体声波谐振器可以用于形成滤波器或电子设备。
这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。
基于以上，本公开提出了如下技术方案：
基于以上实施例及其附图，本公开提出了如下技术方案：
1、一种体声波谐振器，包括：
基底；
声学镜；
底电极；
顶电极；和
压电层，
其中：
所述谐振器在顶电极的连接边还包括第一插入层，第一插入层在谐振器的厚度方向上设置在顶电极与基底之间，且所述声学镜的边缘在谐振器的横向方向上处于第一插入层的内端与外端之间；
所述谐振器在顶电极的连接边还包括第一不导电介质层，第一不导电介质层在谐振器的厚度方向上设置在第一插入层与顶电极之间，所述第一不导电介质层的内端在横向方向上位于第一插入层的内端的内侧，所述第一不导电介质层的外端在横向方向上与第一插入层的外端齐平或者处于第一插入层的外端的外侧；
第一插入层位于压电层的下方或者位于压电层的上方而与压电层非同层布置。
2、根据1所述的谐振器，其中：
所述第一不导电介质层的内端与第一插入层的内端之间的横向距离在0.2μm-10μm的范围内；和/或
所述第一插入层的内端和/或外端与声学镜的边缘之间的横向距离在0.2μm-10μm的范围内。
3、根据1所述的谐振器，其中：
在顶电极的连接边，第一插入层与底电极的非连接边在谐振器的厚度方向的投影存在重叠部分。
4、根据3所述的谐振器，其中：
所述第一插入层的外端处于底电极的非连接边的边缘的外侧且与底电极的非连接边的边缘在横向方向上的距离在0.2μm-10μm的范围内。
5、根据3所述的谐振器，其中：
在顶电极的连接边，底电极的非连接边的边缘在谐振器的横向方向上处于第一插入层的内端与外端之间；和/或
所述第一不导电介质层的外端与所述第一插入层的外端在横向方向上的距离在0.2μm-10μm的范围内。
6、根据3所述的谐振器，其中：
在顶电极的连接边，底电极的非连接边的边缘在谐振器的横向方向上处于第一插入层的外端的外侧；和/或
所述第一不导电介质层的外端在所述底电极的非连接边的外端的外侧且与所述底电极的非连接边的外端在横向方向上的距离在0.2μm-10μm的范围内。
7、根据1所述的谐振器，其中：
在顶电极的连接边，在谐振器的厚度方向上，第一插入层位于底电极与基底之间，或者第一插入层位于底电极与压电层之间，或者第一插入层位于压电层与顶电极之间；或者
在顶电极的连接边，在谐振器的厚度方向上，第一插入层位于压电层中。
8、根据1-7中任一项所述的谐振器，其中：
所述第一不导电介质层在厚度方向上设置在第一插入层与压电层之间；或
所述第一不导电介质层在厚度方向上设置在压电层与顶电极之间。
9、根据1-7中任一项所述的谐振器，其中：
所述谐振器还包括在顶电极的非连接边设置的第二插入层，在顶电极的非连接边，声学镜的边缘在横向方向上处于第二插入层的内端与外端之间。
10、根据9所述的谐振器，其中：
第二插入层的内端在横向方向上与顶电极的非连接边间隔开。
11、根据10所述的谐振器，其中：
在横向方向上第二插入层的内端与顶电极的非连接边间隔开的距离在0.2μm-10μm的范围内。
12、根据9所述的谐振器，其中：
顶电极的非连接边的边缘在横向方向上位于第二插入层的内端的外侧；
所述谐振器还包括第二不导电介质层，且在横向方向上，所述第二不导电介质层的内端处于所述第二插入层的内端的内侧。
13、根据12所述的谐振器，其中：
所述顶电极的非连接边设置有悬翼，所述第二不导电介质层为空隙层以用于形成所述悬翼。
14、根据13所述的谐振器，其中：
所述顶电极的连接边设置有桥结构，所述第一不导电介质层为空隙层以用于形成所述桥结构，第一不导电介质层和第二不导电介质层同层布置。
15、根据14所述的谐振器，其中：
所述谐振器还包括围绕谐振器的有效区域设置的凸起结构，所述凸起结构设置在对应不导电介质层的上方且全部覆盖对应的不导电介质层。
16、根据12所述的谐振器，其中：
第一不导电介质层在厚度方向上设置在压电层与第一插入层之间，第二不导电介质层在厚度方向上设置在压电层与第二插入层之间；且
第二不导电介质层的外端在横向方向上处于顶电极的非连接边的外侧。
17、根据16所述的谐振器，其中：
所述第二不导电介质层在横向方向上覆盖整个所述第二插入层。
18、根据9所述的谐振器，其中：
在顶电极的非连接边，第二插入层的内端和/或外端在横向方向上与声学镜的边缘之间的距离在0.2μm-10μm的范围内。
19、根据9所述的谐振器，其中：
所述第二插入层与所述第一插入层同层设置。
20、根据9所述的谐振器，其中：
第一插入层与第二插入层形成环状插入层。
21、根据9所述的谐振器，其中：
在顶电极的非连接边，底电极的非连接边的边缘在谐振器的横向方向上处于第一插入层的内端与外端之间；或者
在顶电极的非连接边，底电极的非连接边的边缘在谐振器的横向方向上处于第一插入层的外端的外侧。
22、根据1-7中任一项所述的谐振器，其中：
插入层的厚度在
Figure PCTCN2021102315-appb-000003
的范围内。
23、根据1-7中任一项所述的谐振器，其中：
插入层的底部的边缘角度小于45°。
24、一种滤波器，包括根据1-23中任一项所述的谐振器。
25、一种电子设备，包括根据24所述的滤波器或根据1-23中任一项所述的谐振器。
需要指出的是，这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。
尽管已经示出和描述了本公开的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本公开的原理和精神的情况下可以对这些实施例进行变化，本公开的范围由所附权利要求及其等同物限定。

Claims (25)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极；
    顶电极；和
    压电层，
    其中：
    所述谐振器在顶电极的连接边还包括第一插入层，第一插入层在谐振器的厚度方向上设置在顶电极与基底之间，且所述声学镜的边缘在谐振器的横向方向上处于第一插入层的内端与外端之间；
    所述谐振器在顶电极的连接边还包括第一不导电介质层，第一不导电介质层在谐振器的厚度方向上设置在第一插入层与顶电极之间，所述第一不导电介质层的内端在横向方向上位于第一插入层的内端的内侧，所述第一不导电介质层的外端在横向方向上与第一插入层的外端齐平或者处于第一插入层的外端的外侧；
    第一插入层位于压电层的下方或者位于压电层的上方而与压电层非同层布置。
  2. 根据权利要求1所述的谐振器，其中：
    所述第一不导电介质层的内端与第一插入层的内端之间的横向距离在0.2μm-10μm的范围内；和/或
    所述第一插入层的内端和/或外端与声学镜的边缘之间的横向距离在0.2μm-10μm的范围内。
  3. 根据权利要求1所述的谐振器，其中：
    在顶电极的连接边，第一插入层与底电极的非连接边在谐振器的厚度方向的投影存在重叠部分。
  4. 根据权利要求3所述的谐振器，其中：
    所述第一插入层的外端处于底电极的非连接边的边缘的外侧且与底电极的非连接边的边缘在横向方向上的距离在0.2μm-10μm的范围内。
  5. 根据权利要求3所述的谐振器，其中：
    在顶电极的连接边，底电极的非连接边的边缘在谐振器的横向方向上处于第一插入层的内端与外端之间；和/或
    所述第一不导电介质层的外端与所述第一插入层的外端在横向方向上的距离在0.2μm-10μm的范围内。
  6. 根据权利要求3所述的谐振器，其中：
    在顶电极的连接边，底电极的非连接边的边缘在谐振器的横向方向上处于第一插入层的外端的外侧；和/或
    所述第一不导电介质层的外端在所述底电极的非连接边的外端的外侧且与所述底电极的非连接边的外端在横向方向上的距离在0.2μm-10μm的范围内。
  7. 根据权利要求1所述的谐振器，其中：
    在顶电极的连接边，在谐振器的厚度方向上，第一插入层位于底电极与基底之间，或者第一插入层位于底电极与压电层之间，或者第一插入层位于压电层与顶电极之间；或者
    在顶电极的连接边，在谐振器的厚度方向上，第一插入层位于压电层中。
  8. 根据权利要求1-7中任一项所述的谐振器，其中：
    所述第一不导电介质层在厚度方向上设置在第一插入层与压电层之间；或
    所述第一不导电介质层在厚度方向上设置在压电层与顶电极之间。
  9. 根据权利要求1-7中任一项所述的谐振器，其中：
    所述谐振器还包括在顶电极的非连接边设置的第二插入层，在顶电极的非连接边，声学镜的边缘在横向方向上处于第二插入层的内端与外端之间。
  10. 根据权利要求9所述的谐振器，其中：
    第二插入层的内端在横向方向上与顶电极的非连接边间隔开。
  11. 根据权利要求10所述的谐振器，其中：
    在横向方向上第二插入层的内端与顶电极的非连接边间隔开的距离在0.2μm-10μm的范围内。
  12. 根据权利要求9所述的谐振器，其中：
    顶电极的非连接边的边缘在横向方向上位于第二插入层的内端的外侧；
    所述谐振器还包括第二不导电介质层，且在横向方向上，所述第二不导电介质层的内端处于所述第二插入层的内端的内侧。
  13. 根据权利要求12所述的谐振器，其中：
    所述顶电极的非连接边设置有悬翼，所述第二不导电介质层为空隙层以用于形成所述悬翼。
  14. 根据权利要求13所述的谐振器，其中：
    所述顶电极的连接边设置有桥结构，所述第一不导电介质层为空隙层以用于形成所述桥结构，第一不导电介质层和第二不导电介质层同层布置。
  15. 根据权利要求14所述的谐振器，其中：
    所述谐振器还包括围绕谐振器的有效区域设置的凸起结构，所述凸起结构设置在对应不导电介质层的上方且全部覆盖对应的不导电介质层。
  16. 根据权利要求12所述的谐振器，其中：
    第一不导电介质层在厚度方向上设置在压电层与第一插入层之间，第二不导电介质层在厚度方向上设置在压电层与第二插入层之间；且
    第二不导电介质层的外端在横向方向上处于顶电极的非连接边的外侧。
  17. 根据权利要求16所述的谐振器，其中：
    所述第二不导电介质层在横向方向上覆盖整个所述第二插入层。
  18. 根据权利要求9所述的谐振器，其中：
    在顶电极的非连接边，第二插入层的内端和/或外端在横向方向上与声学镜的边缘之间的距离在0.2μm-10μm的范围内。
  19. 根据权利要求9所述的谐振器，其中：
    所述第二插入层与所述第一插入层同层设置。
  20. 根据权利要求9所述的谐振器，其中：
    第一插入层与第二插入层形成环状插入层。
  21. 根据权利要求9所述的谐振器，其中：
    在顶电极的非连接边，底电极的非连接边的边缘在谐振器的横向方向 上处于第一插入层的内端与外端之间；或者
    在顶电极的非连接边，底电极的非连接边的边缘在谐振器的横向方向上处于第一插入层的外端的外侧。
  22. 根据权利要求1-7中任一项所述的谐振器，其中：
    插入层的厚度在
    Figure PCTCN2021102315-appb-100001
    的范围内。
  23. 根据权利要求1-7中任一项所述的谐振器，其中：
    插入层的底部的边缘角度小于45°。
  24. 一种滤波器，包括根据权利要求1-23中任一项所述的谐振器。
  25. 一种电子设备，包括根据权利要求24所述的滤波器或根据权利要求1-23中任一项所述的谐振器。
PCT/CN2021/102315 2020-06-28 2021-06-25 设置插入层以提升功率的体声波谐振器、滤波器及电子设备 WO2022001861A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190058451A1 (en) * 2017-08-17 2019-02-21 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator
CN111010104A (zh) * 2019-09-02 2020-04-14 天津大学 压电层具有插入结构的体声波谐振器、滤波器和电子设备
CN111193484A (zh) * 2018-11-14 2020-05-22 天津大学 带粗糙面体声波谐振器、滤波器和电子设备
CN111245400A (zh) * 2019-12-04 2020-06-05 天津大学 具有桥部插入结构的体声波谐振器、滤波器和电子设备
CN111313857A (zh) * 2019-11-29 2020-06-19 天津大学 设置有插入结构与温补层的体声波谐振器、滤波器和电子设备
CN111934640A (zh) * 2020-06-28 2020-11-13 诺思(天津)微系统有限责任公司 设置插入层以提升功率的体声波谐振器、滤波器及电子设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5279068B2 (ja) * 2008-02-15 2013-09-04 太陽誘電株式会社 圧電薄膜共振子、フィルタ、通信モジュール、および通信装置
US10439589B2 (en) * 2016-06-24 2019-10-08 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter including the same
KR102097322B1 (ko) * 2017-08-17 2020-04-06 삼성전기주식회사 체적 음향 공진기
KR20200011141A (ko) * 2018-07-24 2020-02-03 삼성전기주식회사 체적 음향 공진기
CN111010121A (zh) * 2019-10-18 2020-04-14 天津大学 带不导电插入层的体声波谐振器、滤波器和电子设备

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190058451A1 (en) * 2017-08-17 2019-02-21 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator
CN111193484A (zh) * 2018-11-14 2020-05-22 天津大学 带粗糙面体声波谐振器、滤波器和电子设备
CN111010104A (zh) * 2019-09-02 2020-04-14 天津大学 压电层具有插入结构的体声波谐振器、滤波器和电子设备
CN111313857A (zh) * 2019-11-29 2020-06-19 天津大学 设置有插入结构与温补层的体声波谐振器、滤波器和电子设备
CN111245400A (zh) * 2019-12-04 2020-06-05 天津大学 具有桥部插入结构的体声波谐振器、滤波器和电子设备
CN111934640A (zh) * 2020-06-28 2020-11-13 诺思(天津)微系统有限责任公司 设置插入层以提升功率的体声波谐振器、滤波器及电子设备

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