WO2021042469A1 - 像素结构及显示装置 - Google Patents

像素结构及显示装置 Download PDF

Info

Publication number
WO2021042469A1
WO2021042469A1 PCT/CN2019/114091 CN2019114091W WO2021042469A1 WO 2021042469 A1 WO2021042469 A1 WO 2021042469A1 CN 2019114091 W CN2019114091 W CN 2019114091W WO 2021042469 A1 WO2021042469 A1 WO 2021042469A1
Authority
WO
WIPO (PCT)
Prior art keywords
line
metal
common electrode
pixel structure
layer
Prior art date
Application number
PCT/CN2019/114091
Other languages
English (en)
French (fr)
Inventor
王醉
Original Assignee
Tcl华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tcl华星光电技术有限公司 filed Critical Tcl华星光电技术有限公司
Priority to US16/617,179 priority Critical patent/US11774817B2/en
Publication of WO2021042469A1 publication Critical patent/WO2021042469A1/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a pixel structure and a display device.
  • first common electrode line and the second common electrode line are perpendicular to each other.
  • the first common electrode line, the second common electrode line, and the gate line are different layers of metal, and the second common electrode line
  • the electrode line is perpendicular to the gate line and runs through all pixel areas.
  • the disadvantage of this design is that the second common electrode line occupies too many pixels of the display area, resulting in a decrease in transmittance, and an electrical shift due to illumination during the manufacturing process.
  • first common electrode line and the second common electrode line are perpendicular to each other.
  • the first common electrode line, the second common electrode line, and the gate line are different layers of metal, and the second common electrode line
  • the electrode line is perpendicular to the gate line and runs through all pixel areas.
  • the disadvantage of this design is that the second common electrode line occupies too many pixels of the display area, resulting in a decrease in transmittance, and an electrical shift due to illumination during the manufacturing process.
  • an object of the present disclosure is to provide a pixel structure and a display device, which can improve the transmittance of the pixel structure.
  • the present disclosure provides a pixel structure.
  • the pixel structure includes a first metal layer, a transparent electrode layer, and a second metal layer.
  • the first metal layer includes a plurality of first metal lines, a plurality of second metal lines, and a third metal line.
  • the first metal line, the second metal line, and the third metal line form a plurality of spaces.
  • the transparent electrode layer is disposed in the space formed by the first metal layer.
  • the second metal layer is disposed above the first metal layer and the transparent electrode layer.
  • the second metal layer is disposed on one side of the transparent electrode layer.
  • the first metal line is a plurality of first common electrode lines
  • the second metal line is a plurality of second common electrode lines
  • the third metal line is a gate line
  • the second metal layer is a data line.
  • the second common electrode line and the gate line are parallel to each other.
  • the extending direction of the first part of the first common electrode line and the gate line are perpendicular to each other, and the second part of the first common electrode line and the gate line are perpendicular to each other. parallel.
  • the transparent electrode layer is disposed in a space formed by the first part of the first common electrode line and the second part of the first common electrode line.
  • the pixel structure further includes a display area, and the first common electrode line and the second common electrode line are parallel to each other and alternately connected to the display area.
  • the pixel structure further includes a pixel non-transmissive area, and the second common electrode line and the gate line pass through the pixel non-transmissive area in parallel with each other.
  • the pixel structure further includes a pixel non-transmissive area, the projection of the data line on the pixel non-transmissive area, and the transparent electrode layer on the pixel non-transmissive area The projections on the zones do not overlap.
  • the present disclosure also provides a display device.
  • the display device includes a substrate and a pixel structure.
  • the pixel structure is disposed on the substrate.
  • the pixel structure includes a first metal layer, a transparent electrode layer, and a second metal layer.
  • the first metal layer includes a plurality of first metal lines, a plurality of second metal lines, and a third metal line.
  • the first metal line, the second metal line, and the third metal line form a plurality of spaces.
  • the transparent electrode layer is disposed in the space formed by the first metal layer.
  • the second metal layer is disposed above the first metal layer and the transparent electrode layer.
  • the second metal layer is disposed on one side of the transparent electrode layer.
  • the first metal line is a plurality of first common electrode lines
  • the second metal line is a plurality of second common electrode lines
  • the third metal line is a gate line
  • the second metal layer is a data line.
  • the second common electrode line and the gate line are parallel to each other.
  • the extending direction of the first part of the first common electrode line and the gate line are perpendicular to each other, and the second part of the first common electrode line and the gate line are perpendicular to each other. parallel.
  • the transparent electrode layer is disposed in a space formed by the first part of the first common electrode line and the second part of the first common electrode line.
  • the pixel structure further includes a display area, and the first common electrode line and the second common electrode line are parallel to each other and alternately connected to the display area.
  • the pixel structure further includes a pixel non-transmissive area, and the second common electrode line and the gate line pass through the pixel non-transmissive area in parallel with each other.
  • the pixel structure further includes a pixel non-transmissive area, the projection of the data line on the pixel non-transmissive area, and the transparent electrode layer on the pixel non-transmissive area The projections on the zones do not overlap.
  • the pixel structure includes a first metal layer, a transparent electrode layer, and a second metal layer.
  • the first metal layer includes a plurality of first metal lines, a plurality of second metal lines, and a third metal line.
  • the first metal line, the second metal line, and the third metal line form a plurality of spaces.
  • the transparent electrode layer is disposed in the space formed by the first metal layer.
  • the second metal layer is disposed above the first metal layer and the transparent electrode layer.
  • FIG. 1 shows a schematic structural diagram of a pixel structure according to an embodiment of the present disclosure
  • FIG. 2 shows a schematic structural diagram of a pixel structure according to an embodiment of the present disclosure
  • FIG. 3 shows a schematic structural diagram of a pixel structure according to an embodiment of the present disclosure.
  • FIG. 4 shows a schematic structural diagram of a display device according to an embodiment of the present disclosure.
  • an embodiment of the present disclosure provides a pixel structure 100.
  • the pixel structure 100 includes a plurality of pixels 102.
  • the pixel structure 100 includes a first metal layer 110, a transparent electrode layer 120 and a second metal layer 130.
  • the first metal layer 110 includes a plurality of first metal lines 112, a plurality of second metal lines 114 and a third metal line 116.
  • the first metal line 112, the second metal line 114 and the third metal line 116 form a plurality of spaces 118.
  • the transparent electrode layer 120 is disposed in the space 118 formed by the first metal line 112, the second metal line 114 and the third metal line 116.
  • the second metal layer 130 is disposed above the first metal layer 110 and the transparent electrode layer 120.
  • the embodiment of the present disclosure can improve the transmittance of the pixel structure 100.
  • the second metal layer 130 is disposed on one side of the transparent electrode layer 120.
  • the first metal line 112 is a plurality of first common electrode lines 112
  • the second metal line 114 is a plurality of second common electrode lines 114
  • the third metal line 116 is a gate line 116
  • the second metal layer 130 is a data line 130.
  • the second common electrode line 114 and the gate line 116 are parallel to each other.
  • the extending direction of the first part of the first common electrode line and the gate line are perpendicular to each other, and the second part of the first common electrode line and the gate line are parallel to each other.
  • the transparent electrode layer is disposed in a space formed by the first part of the first common electrode line and the second part of the first common electrode line.
  • the pixel structure 100 further includes a pixel non-transmissive area 140, and the second common electrode line 114 and the gate line 116 are parallel to each other and pass through the pixel non-transmissive area 140 .
  • a new line with the same layer type as the gate line 116 (the first metal layer 110) is added as the second common electrode line 114, and the The second common electrode line 114 and the gate line 116 pass through the pixel non-transmissive area 140 in parallel.
  • the pixel structure 100 further includes a pixel non-transmissive area 140, and the projection and the projection of the data line 130 on the pixel non-transmissive area 140 The projection of the transparent electrode layer 120 on the non-transmissive area 140 of the pixel does not overlap.
  • the second metal line 114 is a plurality of intermittent second common electrode lines 114.
  • the original structure of the first common electrode line is disassembled into two parts, and the part perpendicular to the gate line 116 is still the first common electrode line 112 and the first common electrode line 112.
  • the parallel portion of the gate line 116 serves as the second common electrode line 114, and the aperture ratio in this embodiment is larger.
  • the pixel structure 100 further includes a display area 150, and the first common electrode line 112 and the second common electrode line 114 are parallel to each other and alternately connected to all of them. ⁇ display area 150.
  • an embodiment of the present disclosure further provides a display device 10.
  • the display device 10 includes a substrate 200 and the pixel structure 100 as described above.
  • the pixel structure 100 is disposed on the substrate 200.
  • the display devices are, for example, various consumer electronic products such as mobile phones, televisions, personal digital assistants, digital cameras, and notebook computers.
  • the line distribution and layer type of the second common electrode line are changed, so that the second common electrode line is parallel to the gate line, and the The first common electrode line and the second common electrode line are parallel to each other and interleaved into the display area, and the penetration rate is improved while ensuring the effect of improving the large viewing angle deviation.
  • the second common electrode line is the first metal layer, there will be no semiconductor layer under it during the photomask manufacturing process, which avoids the problem of photo-generated carriers caused by the semiconductor layer being irradiated by light.
  • the pixel structure includes a first metal layer, a transparent electrode layer, and a second metal layer.
  • the first metal layer includes a plurality of first metal lines, a plurality of second metal lines, and a third metal line.
  • the first metal line, the second metal line, and the third metal line form a plurality of spaces.
  • the transparent electrode layer is disposed in the space formed by the first metal layer.
  • the second metal layer is disposed above the first metal layer and the transparent electrode layer.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

像素结构（100）及显示装置(10),像素结构（100）包括第一金属层(110)、透明电极层(120)以及第二金属层(130)。第一金属层(110)包括多条第一金属线(112)、多条第二金属线(114)和第三金属线(116)。透明电极层(120)设置在第一金属层(110)形成的空间内。第二金属层(130)设置在第一金属层(110)和透明电极层(120)的上方且设置在透明电极层(120)的一侧。

Description

像素结构及显示装置 技术领域
本揭示涉及显示技术领域，特别涉及一种像素结构及显示装置。
 背景技术
现有的液晶显示器在大视角观察时往往会出现色彩偏移的现象。通常第一公共电极线和第二公共电极线彼此垂直，在像素结构中，所述第一公共电极线、所述第二公共电极线和栅极线为不同层金属，且所述第二公共电极线垂直所述栅极线且贯穿所有像素区域。此种设计的不足在于所述第二公共电极线占用太多像素的显示区域，导致穿透率下降，在制程中还会因为照光引起电性偏移。
故，有需要提供一种像素结构及显示装置，以解决现有技术存在的问题。
 技术问题
现有的液晶显示器在大视角观察时往往会出现色彩偏移的现象。通常第一公共电极线和第二公共电极线彼此垂直，在像素结构中，所述第一公共电极线、所述第二公共电极线和栅极线为不同层金属，且所述第二公共电极线垂直所述栅极线且贯穿所有像素区域。此种设计的不足在于所述第二公共电极线占用太多像素的显示区域，导致穿透率下降，在制程中还会因为照光引起电性偏移。
 技术解决方案
为解决上述技术问题，本揭示的一目的在于提供像素结构及显示装置，其能够提升所述像素结构的穿透率。
为达成上述目的，本揭示提供一像素结构。所述像素结构包括第一金属层、透明电极层以及第二金属层。所述第一金属层包括多条第一金属线、多条第二金属线和第三金属线。所述第一金属线、所述第二金属线和所述第三金属线形成多个空间。所述透明电极层设置在所述第一金属层形成的所述空间内。所述第二金属层设置在所述第一金属层和所述透明电极层的上方。
于本揭示其中的一实施例中，所述第二金属层设置在所述透明电极层的一侧。
于本揭示其中的一实施例中，所述第一金属线为多条第一公共电极线，所述第二金属线为多条第二公共电极线，所述第三金属线为栅极线，以及所述第二金属层为数据线。
于本揭示其中的一实施例中，所述第二公共电极线和所述栅极线彼此平行。
于本揭示其中的一实施例中，所述第一公共电极线的第一部分的延伸方向和所述栅极线彼此垂直，所述第一公共电极线的第二部分和所述栅极线彼此平行。
于本揭示其中的一实施例中，所述透明电极层设置于所述第一公共电极线的所述第一部分和所述第一公共电极线的所述第二部分形成的空间内。
于本揭示其中的一实施例中，所述像素结构还包括显示区域，所述第一公共电极线和所述第二公共电极线彼此平行且交错接入至所述显示区域。
于本揭示其中的一实施例中，所述像素结构还包括像素非透光区，所述第二公共电极线和所述栅极线彼此平行经过所述像素非透光区。
于本揭示其中的一实施例中，所述像素结构还包括像素非透光区，所述数据线在所述像素非透光区上的投影和所述透明电极层在所述像素非透光区上的投影不重叠。
本揭示还提供一显示装置。所述显示装置包括基板以及的像素结构。所述像素结构设置在所述基板上。所述像素结构包括第一金属层、透明电极层以及第二金属层。所述第一金属层包括多条第一金属线、多条第二金属线和第三金属线。所述第一金属线、所述第二金属线和所述第三金属线形成多个空间。所述透明电极层设置在所述第一金属层形成的所述空间内。所述第二金属层设置在所述第一金属层和所述透明电极层的上方。
于本揭示其中的一实施例中，所述第二金属层设置在所述透明电极层的一侧。
于本揭示其中的一实施例中，所述第一金属线为多条第一公共电极线，所述第二金属线为多条第二公共电极线，所述第三金属线为栅极线，以及所述第二金属层为数据线。
于本揭示其中的一实施例中，所述第二公共电极线和所述栅极线彼此平行。
于本揭示其中的一实施例中，所述第一公共电极线的第一部分的延伸方向和所述栅极线彼此垂直，所述第一公共电极线的第二部分和所述栅极线彼此平行。
于本揭示其中的一实施例中，所述透明电极层设置于所述第一公共电极线的所述第一部分和所述第一公共电极线的所述第二部分形成的空间内。
于本揭示其中的一实施例中，所述像素结构还包括显示区域，所述第一公共电极线和所述第二公共电极线彼此平行且交错接入至所述显示区域。
于本揭示其中的一实施例中，所述像素结构还包括像素非透光区，所述第二公共电极线和所述栅极线彼此平行经过所述像素非透光区。
于本揭示其中的一实施例中，所述像素结构还包括像素非透光区，所述数据线在所述像素非透光区上的投影和所述透明电极层在所述像素非透光区上的投影不重叠。
 有益效果
相较于现有技术，为解决上述技术问题，由于本揭示的实施例中的像素结构及显示装置，所述像素结构包括第一金属层、透明电极层以及第二金属层。所述第一金属层包括多条第一金属线、多条第二金属线和第三金属线。所述第一金属线、所述第二金属线和所述第三金属线形成多个空间。所述透明电极层设置在所述第一金属层形成的所述空间内。所述第二金属层设置在所述第一金属层和所述透明电极层的上方。本揭示的实施例能够提升所述像素结构的穿透率。
 附图说明
图1显示根据本揭示的一实施例的像素结构的结构示意图；
图2显示根据本揭示的一实施例的像素结构的结构示意图；
图3显示根据本揭示的一实施例的像素结构的结构示意图；以及
图4显示根据本揭示的一实施例的显示装置的结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本揭示可用以实施的特定实施例。
为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。
在图中，结构相似的单元是以相同标号表示。
参照图1和图2，本揭示的一实施例提供一像素结构100。所述像素结构100包括多个像素102。所述像素结构100包括第一金属层110、透明电极层120以及第二金属层130。所述第一金属层110包括多条第一金属线112、多条第二金属线114和第三金属线116。所述第一金属线112、所述第二金属线114和所述第三金属线116形成多个空间118。所述透明电极层120设置在所述第一金属线112、所述第二金属线114和所述第三金属线116形成的所述空间118内。所述第二金属层130设置在所述第一金属层110和所述透明电极层120的上方。本揭示的实施例能够提升所述像素结构100的穿透率。
参照图1和图2，于本揭示其中的一实施例中，所述第二金属层130设置在所述透明电极层120的一侧。于本揭示其中的一实施例中，所述第一金属线112为多条第一公共电极线112，所述第二金属线114为多条第二公共电极线114，所述第三金属线116为栅极线116，以及所述第二金属层130为数据线130。
参照图1和图2，于本揭示其中的一实施例中，所述第二公共电极线114和所述栅极线116彼此平行。所述第一公共电极线的第一部分的延伸方向和所述栅极线彼此垂直，所述第一公共电极线的第二部分和所述栅极线彼此平行。所述透明电极层设置于所述第一公共电极线的所述第一部分和所述第一公共电极线的所述第二部分形成的空间内。于本揭示其中的一实施例中，所述像素结构100还包括像素非透光区140，所述第二公共电极线114和所述栅极线116彼此平行经过所述像素非透光区140。
参照图1，本揭示其中的一实施例中，新增一条与所述栅极线116相同层别(所述第一金属层110)的线路，作为所述第二公共电极线114，所述第二公共电极线114与所述栅极线116平行经过所述像素非透光区140。
参照图1和图2，于本揭示其中的一实施例中，所述像素结构100还包括像素非透光区140，所述数据线130在所述像素非透光区140上的投影和所述透明电极层120在所述像素非透光区140上的投影不重叠。
参照图2，于本揭示其中的一实施例中，所述第二金属线114为多条断续的第二公共电极线114。于本揭示其中的一实施例中，将原有第一公共电极线的结构拆解成两个部分，与所述栅极线116垂直的部分仍为所述第一公共电极线112，与所述栅极线116平行的部分作为所述第二公共电极线114，此实施例的开口率更大。
参照图3，于本揭示其中的一实施例中，所述像素结构100还包括显示区域150，所述第一公共电极线112和所述第二公共电极线114彼此平行且交错接入至所述显示区域150。
参照图4，本揭示的一实施例还提供一显示装置10。所述显示装置10包括基板200以及如上所述的像素结构100。所述像素结构100设置在所述基板200上。所述显示装置例如为手机、电视、个人数字助理、数字相机、笔记本电脑等各种消费性电子产品。
由于本揭示的实施例中的像素结构及显示装置，改变所述第二公共电极线的线路分布方式和层别，使所述第二公共电极线与所述栅极线平行，同时使所述第一公共电极线和所述第二公共电极线彼此平行交错接入至至所述显示区域内，在保证大视角色偏改善效果的前提下，提升穿透率。而且由于所述第二公共电极线为所述第一金属层，在光罩制程时其下方不会存在半导体层，避免了半导体层受光照射产生的光生载流子问题。
由于本揭示的实施例中的像素结构及显示装置，所述像素结构包括第一金属层、透明电极层以及第二金属层。所述第一金属层包括多条第一金属线、多条第二金属线和第三金属线。所述第一金属线、所述第二金属线和所述第三金属线形成多个空间。所述透明电极层设置在所述第一金属层形成的所述空间内。所述第二金属层设置在所述第一金属层和所述透明电极层的上方。本揭示的实施例能够提升所述像素结构的穿透率。
尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。

Claims (18)

  1.    一种像素结构，包括:
    第一金属层，所述第一金属层包括多条第一金属线、多条第二金属线和第三金属线，所述第一金属线、所述第二金属线和所述第三金属线形成多个空间；
    透明电极层，设置在所述第一金属层形成的所述空间内；以及
    第二金属层，设置在所述第一金属层和所述透明电极层的上方。
  2.    如权利要求1所述的像素结构，其中所述第二金属层设置在所述透明电极层的一侧。
  3.    如权利要求1所述的像素结构，其中所述第一金属线为多条第一公共电极线，所述第二金属线为多条第二公共电极线，所述第三金属线为栅极线，以及所述第二金属层包括数据线。
  4.    如权利要求3所述的像素结构，其中所述第二公共电极线和所述栅极线彼此平行。
  5.    如权利要求4所述的像素结构，其中所述第一公共电极线的第一部分的延伸方向和所述栅极线彼此垂直，所述第一公共电极线的第二部分和所述栅极线彼此平行。
  6.    如权利要求5所述的像素结构，其中所述透明电极层设置于所述第一公共电极线的所述第一部分和所述第一公共电极线的所述第二部分形成的空间内。
  7.    如权利要求3所述的像素结构，其中所述像素结构还包括显示区域，所述第一公共电极线和所述第二公共电极线彼此平行且交错接入至所述显示区域。
  8.    如权利要求3所述的像素结构，其中所述像素结构还包括像素非透光区，所述第二公共电极线和所述栅极线彼此平行经过所述像素非透光区。
  9.    如权利要求3所述的像素结构，其中所述像素结构还包括像素非透光区，所述数据线在所述像素非透光区上的投影和所述透明电极层在所述像素非透光区上的投影不重叠。
  10. 一种显示装置，包括:
    基板；以及
    像素结构，设置在所述基板上；
    其中所述像素结构包括:
    第一金属层，所述第一金属层包括多条第一金属线、多条第二金属线和第三金属线，所述第一金属线、所述第二金属线和所述第三金属线形成多个空间；
    透明电极层，设置在所述第一金属层形成的所述空间内；以及
    第二金属层，设置在所述第一金属层和所述透明电极层的上方。
  11. 如权利要求10所述的显示装置，其中所述第二金属层设置在所述透明电极层的一侧。
  12. 如权利要求10所述的显示装置，其中所述第一金属线为多条第一公共电极线，所述第二金属线为多条第二公共电极线，所述第三金属线为栅极线，以及所述第二金属层包括数据线。
  13. 如权利要求12所述的显示装置，其中所述第二公共电极线和所述栅极线彼此平行。
  14. 如权利要求13所述的显示装置，其中所述第一公共电极线的第一部分的延伸方向和所述栅极线彼此垂直，所述第一公共电极线的第二部分和所述栅极线彼此平行。
  15. 如权利要求14所述的显示装置，其中所述透明电极层设置于所述第一公共电极线的所述第一部分和所述第一公共电极线的所述第二部分形成的空间内。
  16. 如权利要求12所述的显示装置，其中所述像素结构还包括显示区域，所述第一公共电极线和所述第二公共电极线彼此平行且交错接入至所述显示区域。
  17. 如权利要求12所述的显示装置，其中所述像素结构还包括像素非透光区，所述第二公共电极线和所述栅极线彼此平行经过所述像素非透光区。
  18. 如权利要求12所述的显示装置，其中所述像素结构还包括像素非透光区，所述数据线在所述像素非透光区上的投影和所述透明电极层在所述像素非透光区上的投影不重叠。
PCT/CN2019/114091 2019-09-03 2019-10-29 像素结构及显示装置 WO2021042469A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/617,179 US11774817B2 (en) 2019-09-03 2019-10-29 Pixel structure and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910828485.6 2019-09-03
CN201910828485.6A CN110568687A (zh) 2019-09-03 2019-09-03 像素结构及显示装置

Publications (1)

Publication Number Publication Date
WO2021042469A1 true WO2021042469A1 (zh) 2021-03-11

Family

ID=68777619

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/114091 WO2021042469A1 (zh) 2019-09-03 2019-10-29 像素结构及显示装置

Country Status (3)

Country Link
US (1) US11774817B2 (zh)
CN (1) CN110568687A (zh)
WO (1) WO2021042469A1 (zh)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1885140A (zh) * 2005-06-24 2006-12-27 Lg.菲利浦Lcd株式会社 液晶显示器件及其制造方法
US20080165299A1 (en) * 2007-01-10 2008-07-10 Au Optronics Corporation Liquid Crystal Display
CN101634786A (zh) * 2008-07-23 2010-01-27 昆山龙腾光电有限公司 一种液晶面板及包含该液晶面板的显示装置
CN103018986A (zh) * 2012-11-27 2013-04-03 京东方科技集团股份有限公司 阵列基板及其制备和驱动方法、液晶显示面板
CN104570530A (zh) * 2015-02-02 2015-04-29 京东方科技集团股份有限公司 一种双栅线阵列基板和显示装置
CN106449652A (zh) * 2016-09-26 2017-02-22 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板和显示设备
CN109557736A (zh) * 2018-12-13 2019-04-02 深圳市华星光电技术有限公司 一种阵列基板、显示面板及显示设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101350430B1 (ko) * 2007-04-02 2014-01-14 엘지디스플레이 주식회사 씨오에이 구조 횡전계 방식 액정표시장치용 어레이기판
KR101362960B1 (ko) * 2007-05-14 2014-02-13 엘지디스플레이 주식회사 액정표시장치와 그 제조방법
KR101570532B1 (ko) * 2008-10-30 2015-11-20 엘지디스플레이 주식회사 액정표시장치
CN103728800B (zh) 2013-11-29 2016-04-27 深圳市华星光电技术有限公司 一种能消除可移动云纹的液晶显示器
CN103838048B (zh) 2014-02-28 2016-06-01 北京京东方显示技术有限公司 一种阵列基板及其制作方法、显示装置
CN205645811U (zh) * 2016-05-31 2016-10-12 京东方科技集团股份有限公司 一种阵列基板及显示装置
CN106094377A (zh) * 2016-07-25 2016-11-09 深圳市华星光电技术有限公司 一种阵列基板及液晶显示面板
TWI648800B (zh) * 2017-08-03 2019-01-21 友達光電股份有限公司 畫素結構
CN108873531B (zh) * 2018-08-02 2021-05-14 京东方科技集团股份有限公司 阵列基板及其驱动方法、液晶显示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1885140A (zh) * 2005-06-24 2006-12-27 Lg.菲利浦Lcd株式会社 液晶显示器件及其制造方法
US20080165299A1 (en) * 2007-01-10 2008-07-10 Au Optronics Corporation Liquid Crystal Display
CN101634786A (zh) * 2008-07-23 2010-01-27 昆山龙腾光电有限公司 一种液晶面板及包含该液晶面板的显示装置
CN103018986A (zh) * 2012-11-27 2013-04-03 京东方科技集团股份有限公司 阵列基板及其制备和驱动方法、液晶显示面板
CN104570530A (zh) * 2015-02-02 2015-04-29 京东方科技集团股份有限公司 一种双栅线阵列基板和显示装置
CN106449652A (zh) * 2016-09-26 2017-02-22 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板和显示设备
CN109557736A (zh) * 2018-12-13 2019-04-02 深圳市华星光电技术有限公司 一种阵列基板、显示面板及显示设备

Also Published As

Publication number Publication date
CN110568687A (zh) 2019-12-13
US20210405425A1 (en) 2021-12-30
US11774817B2 (en) 2023-10-03

Similar Documents

Publication Publication Date Title
US11271053B2 (en) Display panel having one display region surrounding another display regiion and display device having the same
TWI585968B (zh) 顯示裝置
KR102349303B1 (ko) 디스플레이 패널
US20170213850A1 (en) Color filter substrate, array substrate, and display panel and display apparatus having the same
US20170125448A1 (en) Free-form display
TW565720B (en) Liquid crystal display with a wide viewing angle
US20140092497A1 (en) Color Filter and Related Manufacturing Method Thereof
US9746736B2 (en) Liquid crystal display
JP6539741B2 (ja) 液晶表示パネル及び装置
JP2015172661A (ja) 表示装置
US11327618B2 (en) Touch substrate and display panel
JP2009025819A (ja) 表示パネルおよびその方法
WO2016078208A1 (zh) 一种阵列基板、显示装置
WO2020177209A1 (zh) 阵列基板的制作方法及阵列基板
WO2020015059A1 (zh) Oled显示面板及oled显示装置
US9921436B2 (en) Thin film transistor substrate and liquid crystal display including the same
WO2020133821A1 (zh) 一种oled显示面板及智能终端
TW201411254A (zh) 顯示面板
GB2557159A (en) Array substrate, liquid crystal display panel, and liquid crystal display device
TWI685697B (zh) 顯示裝置
WO2018205524A1 (zh) 一种阵列基板及其制作方法、显示装置
JP2016114936A (ja) 表示パネル
JP7045794B2 (ja) 表示パネル
WO2021042469A1 (zh) 像素结构及显示装置
US10558073B2 (en) Display substrate, liquid crystal display panel and fabricating method thereof, and liquid crystal display apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19944308

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19944308

Country of ref document: EP

Kind code of ref document: A1