WO2021039365A1 - Dispositif de recuit laser et procédé de formation de film cristallisé - Google Patents

Dispositif de recuit laser et procédé de formation de film cristallisé Download PDF

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WO2021039365A1
WO2021039365A1 PCT/JP2020/030415 JP2020030415W WO2021039365A1 WO 2021039365 A1 WO2021039365 A1 WO 2021039365A1 JP 2020030415 W JP2020030415 W JP 2020030415W WO 2021039365 A1 WO2021039365 A1 WO 2021039365A1
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film
laser beam
annealed
laser
forming
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PCT/JP2020/030415
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English (en)
Japanese (ja)
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純一 小杉
後藤　順
誠也 鳥山
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株式会社ブイ・テクノロジー
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Priority to CN202080056343.3A priority Critical patent/CN114207797A/zh
Priority to KR1020227001281A priority patent/KR20220047564A/ko
Publication of WO2021039365A1 publication Critical patent/WO2021039365A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Definitions

  • the present invention relates to a laser annealing device and a method for forming a crystallized film.
  • a thin film transistor (TFT: Thin Film Transistor) is used as a switching element for actively driving a thin display (FPD: Flat Panel Display) such as a liquid crystal display or an organic EL display (OLED: Organic Electroluminescence Display).
  • FPD Flat Panel Display
  • OLED Organic Electroluminescence Display
  • amorphous silicon a-Si: amorphous Silicon
  • p-Si polycrystalline Silicon
  • Amorphous silicon has low mobility, which is an index of electron mobility, and cannot meet the high mobility required for FPDs, which are becoming more dense and high-definition. Therefore, as the TFT in the FPD, it is preferable to form the channel layer with polycrystalline silicon having a higher mobility than amorphous silicon.
  • an excimer laser annealing (ELA: Excimer Laser Annealing) method is known.
  • the laser beam emitted from the excimer laser in a pulsed manner is formed into a line beam-shaped laser beam having a uniform distribution in the optical system.
  • a glass substrate 100 on which an amorphous silicon film 103a is formed is prepared.
  • the irradiation position of the laser beam LBp for pulse irradiation is fixed, and the operation of moving the glass substrate 100 in the scanning direction S is repeated to irradiate the entire surface of the amorphous silicon film 103a with the laser beam LBp.
  • the amorphous silicon film 103a is instantly melted by irradiation with the laser beam LBp, and then crystallized to be modified into the polycrystalline silicon film 103p.
  • a gate line 101 made of copper (Cu) is formed on the glass substrate 100, and a gate insulating film 102 is formed between the gate line 101 and the amorphous silicon film 103. Is intervened.
  • the wavelength of the laser light used in such an ELA method is, for example, a short wavelength of about 308 nm, most of it is absorbed by the amorphous silicon film 103.
  • this ELA method uses pulse irradiation, the inside of the substrate is cooled before the next pulse is irradiated, and the substrate becomes a polycrystalline silicon film without being overheated. Therefore, it is the origin of the term LTPS (low temperature polysilicon).
  • the broken line Tp in FIG. 14 schematically shows the region where the temperature change extends in the lower layer of the region irradiated with each pulse. According to such an ELA method, there is an advantage that the gate line 101 or the like formed on the glass substrate 100 is not easily affected by overheating.
  • the above-mentioned ELA method oscillates a gas laser using a rare gas, there is a problem that equipment cost and maintenance cost increase. Further, the ELA method has a problem that the generated output of the gas laser is strong and it is difficult to keep the phase alignment (coherence) and the output of the laser light in a constant state. Further, in the above-mentioned ELA method, the polycrystalline silicon film 103p is formed up to the region where the TFT is not formed (occupancy rate is more than 90%), so that the energy efficiency is poor. Further, when this ELA method is used, there is a problem that the number of steps of the subsequent processing process is increased because the step of removing the polycrystalline silicon film in the region where the TFT is not formed is added.
  • a line beam-shaped laser beam made of a blue continuous oscillating (CW) laser beam of about 500 nm has been used.
  • CW continuous oscillating
  • FIG. 15 the polycrystalline silicon film 103p is formed by scanning the laser beam LBcw relative to the amorphous silicon film 103a and continuously heating the amorphous silicon film 103a. ..
  • the broken line Tcw in FIG. 15 schematically shows a region where the temperature changes in the lower layer of the region irradiated with the continuously oscillated laser beam LBcw.
  • the conventional annealing method using the above-mentioned CW laser has the following problems. That is, in this annealing method, since the laser beam LBcw is continuously oscillated, there is a problem that heat is trapped on the glass substrate 100 and the gate line 101 is overheated and damaged. In addition, in this annealing method, when a blue laser beam having a wavelength band of about 400 nm to 500 nm is used, the beam reaches the gate line 101 and the glass substrate 100 below the amorphous silicon film 103a. There is a problem that the gate line 101 and the glass substrate 100 are overheated and damaged in combination with the action of the trapped heat. In particular, in the above-mentioned annealing method using a CW laser, it has been difficult to apply a flexible substrate, for example, a substrate made of a resin such as polyimide.
  • the present invention has been made in view of the above problems, and efficiently provides an annealed film to be annealed without thermally damaging a substrate, a wiring layer, or the like arranged below the annealed film. It is an object of the present invention to provide a laser annealing apparatus for crystallization and a method for forming a crystallized film.
  • the aspect of the present invention is to irradiate a continuously oscillating laser beam oscillated from a light source with a film to be annealed formed on a substrate.
  • a laser annealing device that modifies an annealed film into a crystallized film, including a beam processing unit that processes the continuously oscillating laser light so that it becomes a convergent laser beam, and a spot portion where the laser beam converges most.
  • the laser beam is scanned relative to the annealed film while being located inside the film to be annealed.
  • the annealed film is an amorphous silicon film, and a gate line of a thin film transistor is formed on the substrate below the annealed film.
  • the substrate is preferably made of a non-metallic inorganic material or resin.
  • the diameter of the laser beam irradiated on the surface of the film to be annealed is 5 ⁇ m or more and 300 ⁇ m or less.
  • the diameter of the laser beam irradiated on the surface of the film to be annealed is preferably 10 ⁇ m or more and 100 ⁇ m or less.
  • the scanning speed at which the laser beam is scanned relative to the film to be annealed is preferably 100 mm to 1000 mm / sec.
  • the power density of the laser beam is preferably 150 to 500 kW / cm2.
  • the laser beam has a top hat shape and the cross-sectional shape in the direction orthogonal to the optical axis is circular.
  • the laser beam has a donut shape and the cross-sectional shape in the direction orthogonal to the optical axis is circular.
  • a focusing adjusting unit for adjusting the position of the spot portion in the laser beam formed by the beam processing unit, and a controlling unit for controlling the focusing adjusting unit and the light source. ..
  • Another aspect of the present invention is a method for forming a crystallized film in which a film to be annealed formed on a substrate is irradiated with a continuously oscillating laser beam to modify the film to be annealed into a crystallized film.
  • the continuously oscillating laser beam is processed so as to be a converging laser beam, and the spot portion where the laser beam converges most is arranged so as to be located inside the film to be annealed. It is characterized in that the laser beam is scanned relative to the film to be annealed.
  • the annealed film is an amorphous silicon film, and a gate line of a thin film transistor is formed on the substrate below the annealed film.
  • the substrate is preferably made of a non-metallic inorganic material or resin.
  • the diameter of the laser beam irradiated on the surface of the film to be annealed is 5 ⁇ m or more and 300 ⁇ m or less.
  • the diameter of the laser beam irradiated on the surface of the film to be annealed is preferably 10 ⁇ m or more and 100 ⁇ m or less.
  • the scanning speed at which the laser beam is scanned relative to the film to be annealed is preferably 100 mm to 1000 mm / sec.
  • the power density of the laser beam is preferably 150 to 500 kW / cm2.
  • the laser beam has a top hat shape and the cross-sectional shape in the direction orthogonal to the optical axis is circular.
  • the laser beam has a donut shape and the cross-sectional shape in the direction orthogonal to the optical axis is circular.
  • the annealed film is efficiently annealed without thermally damaging the substrate and the wiring layer arranged below the film to be annealed. Can be crystallized.
  • FIG. 1 is a configuration diagram showing an outline of a laser annealing device according to an embodiment of the present invention.
  • FIG. 2 is a perspective view showing a method of forming a crystallized film (pseudo single crystal silicon film) using the laser annealing apparatus according to the embodiment of the present invention.
  • FIG. 3 is a process plan view showing a method of forming a crystallized film (pseudo single crystal silicon film) using the laser annealing apparatus according to the embodiment of the present invention.
  • FIG. 4 is a process plan view showing a method of forming a crystallized film (pseudo single crystal silicon film) using the laser annealing apparatus according to the embodiment of the present invention.
  • FIG. 1 is a configuration diagram showing an outline of a laser annealing device according to an embodiment of the present invention.
  • FIG. 2 is a perspective view showing a method of forming a crystallized film (pseudo single crystal silicon film) using
  • FIG. 5 is an explanatory diagram showing a beam type of a laser beam used in the laser annealing apparatus according to the embodiment of the present invention.
  • FIG. 6 shows a crystal obtained by changing the conditions of the power density per unit area (kW / cm2) and the scanning speed (mm / sec) in the method for forming a crystallized film according to the embodiment of the present invention. It is a figure which shows the occurrence condition of a form.
  • FIG. 7 is a plan view of a glass substrate on which an amorphous silicon film is formed with respect to Comparative Example 1 and Comparative Example 2.
  • FIG. 8 is a plan view showing the annealing result of Comparative Example 1.
  • FIG. 9 is a plan view showing the annealing result of Comparative Example 2.
  • FIG. 8 is a plan view showing the annealing result of Comparative Example 1.
  • FIG. 10 is a plan view showing a damaged portion generated in the gate line due to the annealing of Comparative Example 2.
  • FIG. 11 is a diagram showing a crystallization state and a temperature distribution in Comparative Example 2.
  • FIG. 12-1 is an explanatory diagram schematically showing heat conduction in the cross section of the portion (1) of FIG.
  • FIG. 12-2 is an explanatory diagram schematically showing heat conduction in the cross section of the portion (2) of FIG.
  • FIG. 12-3 is an explanatory diagram schematically showing heat conduction in the cross section of the portion (3) of FIG.
  • FIG. 12-4 is an explanatory diagram schematically showing heat conduction in the cross section of the portion (4) of FIG.
  • FIG. 12-5 is an explanatory diagram schematically showing heat conduction in the cross section of the portion (5) of FIG.
  • FIG. 12-1 is an explanatory diagram schematically showing heat conduction in the cross section of the portion (1) of FIG.
  • FIG. 12-2 is an explanatory diagram schematically showing heat conduction in the cross section
  • FIG. 13 is an explanatory diagram showing another beam shape (doughnut shape) in the method for forming a crystallized film according to the embodiment of the present invention.
  • FIG. 14 is a perspective view showing a laser annealing method using a conventional pulse laser.
  • FIG. 15 is a perspective view showing a laser annealing method using a conventional continuously oscillating laser beam.
  • the laser annealing device 1 includes a light source 2, a beam processing unit 3, a condensing adjustment unit 4, a control unit 5, and a substrate transport means (not shown). ing.
  • the light source 2 includes a CW laser light source as a light source that oscillates a continuously oscillating laser light (CW laser light).
  • the continuously oscillating laser light (CW laser light) is a concept including so-called pseudo continuous oscillation that continuously irradiates the target region with the laser light.
  • the laser beam is a pulse laser
  • the pulse interval is shorter than the cooling time of the silicon thin film (amorphous silicon film) after heating (irradiate with the next pulse before solidifying). You may.
  • various lasers such as a semiconductor laser, a solid-state laser, a liquid laser, and a gas laser can be used.
  • the beam processing unit 3 processes the continuously oscillating laser light oscillated from the light source 2 so as to become a laser beam LBcw that converges at the spot unit F toward the downstream side (rear side).
  • an imaging optical system is used as the beam processing unit 3.
  • the laser beam LBcw has the characteristics of a top hat shape, and the cross-sectional shape in the direction orthogonal to the optical axis is circular.
  • the focusing adjusting unit 4 operates a functional unit that operates the imaging optical system of the beam processing unit 3 to raise and lower the position of the spot portion F of the laser beam LBcw and adjusts the beam shape of the laser beam LBcw. Be prepared.
  • the control unit 5 outputs a control signal to the light source 2 and the light collection adjustment unit 4 based on information from the storage means and the position detection means of the spot unit F (not shown) to control the position of the spot unit F.
  • the substrate transporting means (not shown) includes a mechanism for transporting the substrate to be annealed in the scanning direction S at an arbitrary speed. Therefore, the laser beam LBcw is scanned relative to the substrate by scanning the substrate side with the position of the beam processing portion 3 fixed.
  • the glass substrate 10 as shown in FIGS. 1 to 3 is used as the substrate.
  • the glass substrate 10 has a gate line 11 patterned of copper (Cu) and other metal wiring patterns (not shown), a silicon nitride film (Si3N4) 12, a silicon oxide film (SiO2) 13, and an amorphous film. Amorphous silicon films 14a and the like are sequentially laminated.
  • the gate line 11 includes a portion serving as a gate electrode of the TFT formed for each pixel region (not shown).
  • the thickness dimension of the gate line 11 is 200 to 700 nm
  • the thickness dimension of the silicon nitride film 12 is about 300 nm
  • the thickness dimension of the silicon oxide film 13 is 50 to 100 nm
  • the thickness of the amorphous silicon film 14a is about 50 nm.
  • the diameter dimension d of the laser beam LBcw irradiated on the surface of the amorphous silicon film 14a is set to an arbitrary dimension of 5 ⁇ m or more and 300 ⁇ m or less.
  • the range of this diameter dimension d is such that the irradiation surface of the laser beam LBcw can be accommodated in the semiconductor active region of the TFT.
  • the diameter of the irradiation surface of the laser beam LBcw is preferably 10 ⁇ m or more and 100 ⁇ m or less.
  • the scanning speed at which the laser beam LBcw is scanned relative to the amorphous silicon film 14a is preferably 100 to 1000 mm / sec.
  • the amorphous silicon film 14a can be modified into a pseudo single crystal silicon film 14La by irradiating the amorphous silicon film 14a with the laser beam LBcw under the above-mentioned conditions.
  • the laser annealing apparatus 1 since the spot portion F having a high power density in the laser beam LBcw is located inside the amorphous silicon film 14a, the focus is on the amorphous silicon film 14a. A large amount of heat is supplied. Then, most of the heat is transferred from the spot portion F toward the side (direction of arrow h) in the amorphous silicon film 14a. Since the beam is diffused on the rear side (lower side) of the spot portion F, the power density of the light reaching the underlying silicon oxide film 13 or the like becomes low, and the lower layer side of the amorphous silicon film 14a is overheated. Can be suppressed. Therefore, according to the laser annealing device 1 according to the present embodiment, it is possible to prevent the gate line 11, other wiring patterns, the glass substrate 10, and the like from being damaged by overheating.
  • the glass substrate 10 on which the amorphous silicon film 14a is formed is set in a substrate transporting means (not shown).
  • a gate line 11 and a metal wiring pattern are formed on the glass substrate 10.
  • the beam processing portion 3 is adjusted so that the spot portion F of the laser beam LBcw is located in the film of the amorphous silicon film 14a above the gate line 11.
  • the beam processing unit 3 is adjusted and driven by the light collection adjusting unit 4 controlled by the control unit 5.
  • FIGS. 1 to 3 a substrate transporting means for which the glass substrate 10 side is not shown while irradiating the amorphous silicon film 14a formed on the glass substrate 10 with the laser beam LBcw. Scans along the scanning direction S.
  • the amorphous silicon film 14a above the gate line 11 is modified into a pseudo single crystal silicon film 14La.
  • the wavelength of the continuously oscillating laser light used in this embodiment is, for example, 450 nm.
  • the diameter dimension d of the irradiation surface of the laser beam LBcw is set to be 10 ⁇ m.
  • the diameter dimension d of the laser beam LBcw is preferably set to 5 ⁇ m or more and 300 ⁇ m or less, preferably 10 ⁇ m or more and 100 ⁇ m or less.
  • the numerical aperture NA of the beam processing unit 3 in the imaging optical system is set to 0.4, but the present invention is not limited to this.
  • the laser beam LBcw uses a beam having a top hat shape as shown in FIG. 5 and having a circular cross-sectional shape in the direction orthogonal to the optical axis. ..
  • FIG. 6 shows the crystal morphology obtained by changing the conditions of the power density per unit area as fluence (kW / cm2) and the scanning speed (mm / sec) in the above-mentioned method for forming a crystallized film. The conditions of occurrence are shown.
  • the region sandwiched between the boundary lines L1 and L2 can form a pseudo single crystal silicon film (lateral Si). That is, as can be seen from FIG. 6, a pseudo single crystal silicon film can be formed with a fluence of 150 (kW / cm2) or more.
  • a pseudo single crystal silicon film can be formed in a scanning speed range of 200 to 500 mm / sec. Further, at fluence 110 (kW / cm2), a pseudo single crystal silicon film can be formed in a scanning speed range of 400 to 1000 mm / sec.
  • the fluence is 500 (kW / cm2)
  • the amorphous silicon film can be surely melted and lateral growth can be ensured, so that a pseudo single crystal silicon film can be formed. Therefore, in the above method for forming a crystallized film, a pseudo single crystal silicon film can be formed at a power density of 150 (kW / cm2) or more, and the power density is 500 (kW / cm2) when a practical scanning speed is taken into consideration.
  • a method for forming a crystallized film can be realized in the range up to.
  • Comparative Example 1 in which a crystallized film is produced by an annealing method using a line beam-shaped laser beam LBcw using continuously oscillating laser light will be described.
  • a gate line 101 made of copper (Cu) is formed on the glass substrate 100, and an amorphous silicon film 103a formed in a layer above the gate line 101.
  • the laser beam LBcw formed by the CW laser is annealed while scanning the glass substrate 100 side in the scanning direction S.
  • a blue semiconductor laser is used as the CW laser.
  • the length of the laser beam LBcw in the minor axis direction is 25 ⁇ m, and the length in the major axis direction is 1.2 mm.
  • the distribution of the power density in the short axis direction of the laser beam LBcw is the Gaussian type, and the distribution of the power density in the long axis direction is the top hat type.
  • Comparative Example 1 Comparative Example 1 in which annealing was performed under the following conditions using the line beam-shaped laser beam LBcw as described above will be described.
  • Comparative Example 1 is a case where the power density of the CW laser is set to, for example, 70 kW / cm2, and the scanning speed of the glass substrate 100 is set to, for example, 300 mm / sec. That is, the power density per unit area is low even when the scanning speed is taken into consideration.
  • the amorphous silicon film 103a in which the amorphous silicon (a-Si) remained in the region above the gate line 101, the microcrystalline silicon film 103 ⁇ c, and the microcrystalline silicon film 103 ⁇ c. Is formed.
  • the regions where the gate line 101 is not arranged are the polycrystalline silicon film 103p. Therefore, as the semiconductor layer of the TFT, the amorphous silicon film 103a and the microcrystalline silicon film 103 ⁇ c are mixed. Therefore, it is not possible to manufacture a switching element having high mobility, and there is a possibility that the characteristics may vary between the TFTs.
  • Comparative Example 2 In Comparative Example 2, annealing was performed under the following conditions using a line beam-shaped laser beam LBcw in the same manner as in Comparative Example 1.
  • the power density of the CW laser was set to, for example, 140 kW / cm2, and the scanning speed of the glass substrate 100 was set to, for example, 400 mm / sec or more.
  • the amorphous silicon film 103a and the polycrystalline silicon film 103p, which remained as amorphous silicon (a-Si) were formed in the region above the gate line 101. Is formed. Further, almost all the regions where the gate line 101 is not arranged are the polycrystalline silicon film 103p.
  • the amorphous silicon film 103a and the polycrystalline silicon film 103p are mixed as the semiconductor layer of the TFT. Therefore, it is not possible to manufacture a switching element having high mobility, and there is a possibility that the characteristics may vary between the TFTs. As shown in FIGS. 9 and 10, in this Comparative Example 2, the damaged portion 101d is generated at the gate line 101. Therefore, in the annealing method under the conditions as in Comparative Example 2, there is a possibility that the yield of the TFT panel may be lowered or the durability of the TFT panel may be lowered.
  • FIG. 11 shows the temperature distribution and the crystallization state according to the sites (1) to (5) of the gate line 101 when annealing is performed in the same procedure as in Comparative Example 2.
  • FIG. 12-1 is a cross-sectional explanatory view of the region (1) in FIG.
  • the gate line 101 does not exist directly under the region irradiated with the laser beam LBcw, so that the heat conduction is poor and the heat stays in the amorphous silicon film 103. Therefore, crystallization is promoted in this region.
  • FIG. 12-2 is a cross-sectional explanatory view of the region (2) in FIG.
  • the edge portion of the gate line 101 exists directly below the laser beam LBcw, so that the heat from the laser beam LBcw is rapidly taken away by the gate line 101 made of Cu having good thermal conductivity. Heat does not stay on the amorphous silicon film 103. Therefore, in this region, the amorphous silicon film 103 is not crystallized, and the amorphous silicon film 103 remains.
  • FIG. 12-3 is a cross-sectional explanatory view of the region (3) in FIG. 11, and FIG. 12-4 is a cross-sectional explanatory view of the region (4) in FIG.
  • the laser beam LBcw is located at these positions, heat is less likely to be transferred to the gate line 101 as the temperature of the gate line 101 increases, and heat accumulates in the amorphous silicon film 103. Therefore, the amorphous silicon film 103 gradually shifts from the microcrystalline silicon film 103 ⁇ c to the crystalline state of the polycrystalline silicon film 103p.
  • FIG. 12-5 is a cross-sectional explanatory view of the region (5) in FIG.
  • the edge portion of the gate line 101 exists below the position where the laser beam LBcw is irradiated, so that the edge portion takes away the heat supplied to the glass substrate 100 side and the edge portion.
  • the temperature of the laser rises sharply. Therefore, the edge portion of the gate line 101 is easily damaged by heat.
  • the region of the amorphous silicon film 103 above the edge portion is deprived of temperature and lowered, so that the crystallized state is a microcrystalline silicon film ( ⁇ c—Si).
  • the spot portion F of the laser beam LBcw is scanned in a state where it is located inside the film of the amorphous silicon film 14a, so that the amorphous silicon film 14a is selected. It is annealed with a high power density. Therefore, heat is transferred from the spot portion F to the side (direction of arrow h shown in FIG. 1) to crystallize a predetermined range.
  • the method for forming a crystallized film according to the present embodiment has an advantage that the amorphous silicon film 14a can be uniformly heated without being affected by the lower layer, and a uniform pseudo single crystal silicon film can be formed. It becomes. According to the method for forming a crystallized film according to the present embodiment, it is of course possible to form a high-quality polycrystalline silicon film by changing the condition setting.
  • the laser beam is dispersed and spreads below the spot portion F of the laser beam LBcw to reduce the power density. Therefore, the gate line 11 arranged in the lower layer and the gate line 11 (not shown) are not shown. It is possible to suppress the occurrence of thermal damage to other metal wiring patterns and the glass substrate 10.
  • a resin having flexibility as a substrate for example, a resin such as polyimide. It also makes it possible to apply a substrate. Further, in the present embodiment, it is of course possible to apply a non-metallic inorganic material other than glass as the substrate.
  • a pseudo single crystal silicon film 14La can be formed without affecting the crystallization state even if the scanning speed fluctuates slightly. That is, according to the method for forming a crystallized film according to the present embodiment, there is an effect that thermally stable annealing can be performed on the amorphous silicon film 14a even if the scanning direction fluctuates.
  • the method for forming a crystallized film according to the present embodiment has the effect of increasing the margin of annealing conditions, as shown in FIG.
  • the configuration can be applied to an FPD such as a glass substrate 10 as a substrate, but it may be applied to a semiconductor substrate. Then, as the film to be annealed formed on such a semiconductor substrate, for example, Cu wiring can be mentioned. In this case, it is possible to perform a process of improving the conductivity by crystallizing the Cu wiring of the semiconductor device using the semiconductor wafer.
  • the top hat type is applied as the laser beam LBcw, but the intensity distribution of the laser may be Gaussian.
  • the laser beam LBcw may be a donut-shaped laser beam LBcw.
  • a substrate in which an annealed film is laminated on the uppermost layer is used, but a structure having a protective layer such as a silicon oxide film on the annealed film can also be applied. is there.
  • the laser annealing device 1 has a configuration in which the focusing adjusting unit 4 is provided, the focusing adjusting unit 4 may be omitted as a configuration in which the beam processing unit 3 is provided with an adjusting mechanism.
  • Laser annealing device 2 Light source 3 Beam processing unit 4 Condensing adjustment unit 5 Control unit 10 Glass substrate (board) 11 Gateline 12 Silicon nitriding film 13 Silicon oxide film 14a Amorphous silicon film (annealed film) 14La pseudo single crystal silicon film F spot part LBcw laser beam (continuous oscillation) LBp laser beam (pulse oscillation)

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Abstract

L'invention concerne un dispositif de recuit laser modifiant un film à recuire en un film cristallisé par irradiation du film à recuire, qui a été formé sur un substrat, avec une lumière laser oscillée en continu à partir d'une source de lumière. Le présent dispositif de recuit laser est pourvu d'une unité de traitement de faisceau qui traite la lumière laser oscillée en continu en focalisation de faisceaux laser ; et les faisceaux laser sont relativement balayés par rapport au film à recuire dans un état dans lequel un point sur lequel la plupart des faisceaux laser sont focalisés est positionné à l'intérieur du film à recuire.
PCT/JP2020/030415 2019-08-29 2020-08-07 Dispositif de recuit laser et procédé de formation de film cristallisé WO2021039365A1 (fr)

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CN202080056343.3A CN114207797A (zh) 2019-08-29 2020-08-07 激光退火装置和晶化膜的形成方法
KR1020227001281A KR20220047564A (ko) 2019-08-29 2020-08-07 레이저 어닐 장치 및 결정화 막의 형성 방법

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JP2019157088A JP2021034693A (ja) 2019-08-29 2019-08-29 レーザアニール装置および結晶化膜の形成方法

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194605A (ja) * 2005-12-20 2007-08-02 Semiconductor Energy Lab Co Ltd レーザ照射装置、及び半導体装置の作製方法
JP2010192611A (ja) * 2009-02-17 2010-09-02 Sharp Corp 半導体装置基板の製造方法および半導体装置基板
JP2011165717A (ja) * 2010-02-04 2011-08-25 Hitachi Displays Ltd 表示装置及び表示装置の製造方法
JP2012248551A (ja) * 2011-05-25 2012-12-13 Panasonic Corp レーザ照射装置
WO2018065861A1 (fr) * 2016-10-07 2018-04-12 株式会社半導体エネルギー研究所 Procédé de nettoyage de substrat de verre, procédé de fabrication de dispositif à semi-conducteur, et substrat de verre

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Publication number Priority date Publication date Assignee Title
TW535194B (en) 2000-08-25 2003-06-01 Fujitsu Ltd Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194605A (ja) * 2005-12-20 2007-08-02 Semiconductor Energy Lab Co Ltd レーザ照射装置、及び半導体装置の作製方法
JP2010192611A (ja) * 2009-02-17 2010-09-02 Sharp Corp 半導体装置基板の製造方法および半導体装置基板
JP2011165717A (ja) * 2010-02-04 2011-08-25 Hitachi Displays Ltd 表示装置及び表示装置の製造方法
JP2012248551A (ja) * 2011-05-25 2012-12-13 Panasonic Corp レーザ照射装置
WO2018065861A1 (fr) * 2016-10-07 2018-04-12 株式会社半導体エネルギー研究所 Procédé de nettoyage de substrat de verre, procédé de fabrication de dispositif à semi-conducteur, et substrat de verre

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