WO2021027671A1 - 一种体声波滤波器及电子设备 - Google Patents

一种体声波滤波器及电子设备 Download PDF

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Publication number
WO2021027671A1
WO2021027671A1 PCT/CN2020/107339 CN2020107339W WO2021027671A1 WO 2021027671 A1 WO2021027671 A1 WO 2021027671A1 CN 2020107339 W CN2020107339 W CN 2020107339W WO 2021027671 A1 WO2021027671 A1 WO 2021027671A1
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WIPO (PCT)
Prior art keywords
metal
protective cap
sealing ring
resonators
acoustic wave
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PCT/CN2020/107339
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English (en)
French (fr)
Inventor
庞慰
梁新红
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Publication of WO2021027671A1 publication Critical patent/WO2021027671A1/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators

Definitions

  • the present invention relates to the technical field of bulk acoustic wave filters, and in particular to a bulk acoustic wave filter and electronic equipment for improving near-stop band suppression.
  • the interval between the resonators is further reduced; the periphery of the resonator is protected by a metal sealing ring to prevent gas, liquid, etc. from contaminating the chip, and the interval between each resonator and the sealing ring is also further reduced; the spacing is reduced
  • the resonators are coupled to each other through the sealing ring to generate parasitic capacitance, which makes the out-of-band suppression deteriorate to different degrees.
  • the numerical values between series resonators, between parallel resonators, and between series resonators and parallel resonators are relatively low. Small parasitic capacitances, these parasitic capacitances lead to varying degrees of deterioration of the filter's near-stop band suppression. For multiplexers, isolation will also deteriorate to varying degrees.
  • the traditional method of improving chip suppression and isolation is mainly by opening the resonator that is prone to interference or the spatial distance between the resonator and the metal sealing ring. But with the ever-decreasing chip size, the limitations of this technical solution have become more prominent. Limited by space constraints, the field of RF filter chip manufacturing urgently needs a new technical solution that can improve chip rejection and isolation without increasing the space distance.
  • the present invention provides a bulk acoustic wave filter and electronic device with improved near-stop band suppression.
  • the sealing ring is connected to the reference ground plane of the carrier through a solder ball, thereby eliminating the gap between the resonators and The coupling between the sealing rings improves the near-stop band suppression.
  • a bulk acoustic wave filter including: a chip main body, a protective cap and a carrier plate;
  • a plurality of resonators are arranged in sequence on the surface of the chip body, and a sealing ring is arranged around the plurality of resonators; the protective cap is arranged on the chip body, and parallel sides of the sealing ring are respectively connected with The bottom ends of the two metal columns are respectively connected with the sealing ring, and the top ends are connected to a metal strip through the surface of the protective cap, and the metal strip is connected with the carrier board through a metal ball.
  • a bulk acoustic wave filter including: a chip main body, a protective cap and a carrier plate;
  • a plurality of resonators are arranged in sequence on the surface of the chip body, and a sealing ring is arranged around the plurality of resonators; the protective cap is arranged on the chip body, and the two sides of the sealing ring are respectively connected with metal posts , The bottom ends of the two metal columns are connected with the sealing ring, and the top ends are respectively connected to the corresponding metal strips through the surface layer of the protective cap, and the two metal strips are respectively connected to the carrier board through metal balls.
  • a bulk acoustic wave filter including: a chip main body, a protective cap and a carrier plate;
  • a plurality of resonators are arranged in sequence on the surface of the chip main body, and a sealing ring is arranged around the plurality of resonators; the protective cap is arranged on the chip main body, and one side of the sealing ring is connected with a metal column, The bottom end of the metal column is connected with the sealing ring, and the top end penetrates the surface of the protective cap and is connected with a metal strip, and the metal strips are respectively connected with the carrier board through metal balls.
  • a bulk acoustic wave filter including: a chip main body, a protective cap and a carrier plate;
  • a plurality of resonators are arranged in sequence on the surface of the chip body, and a sealing ring is arranged around the plurality of resonators; the protective cap is arranged on the chip body, and the two sides of the sealing ring are respectively connected with metal posts , The bottom ends of the two metal columns are connected to the sealing ring, and the top ends are connected to a metal strip through the surface layer of the protective cap, and the metal strip is connected to the carrier board through a metal ball; the bottom ends of the two metal columns are also connected to the corresponding The resonators are connected.
  • An electronic device includes the above-mentioned bulk acoustic wave filter.
  • the present invention is provided with metal pillars on opposite sides of the sealing ring.
  • the two metal pillars penetrate to the surface of the protective cap, and are connected to the metal strip through the surface of the protective cap, and then connected to the ground plane of the multi-layer carrier by the metal ball.
  • the path is equivalent to a parallel grounding inductance.
  • the series parasitic capacitance and the parallel grounding inductance form a resonant circuit.
  • the present invention is provided with metal pillars on opposite sides of the sealing ring.
  • the two metal pillars penetrate to the surface of the protective cap, and are connected to the ground plane of the multilayer carrier board by metal solder balls.
  • the entire path is equivalent to a parallel grounding inductor ,
  • the series parasitic capacitance and the parallel grounding inductance form a resonant circuit.
  • a metal pillar is arranged on one side of the sealing ring, and the metal pillar penetrates to the surface of the protective cap, and is connected to the ground plane of the multilayer carrier board by a metal solder ball.
  • the entire path is equivalent to a parallel grounding inductor and series parasitic capacitance It forms a resonant circuit with the parallel grounding inductance, and by adjusting the size of the parallel inductance, resonance is generated at the out-of-band suppression to offset the adverse effects of parasitic capacitance;
  • the metal pillars arranged on opposite sides of the sealing ring in this embodiment are not only connected to the sealing ring, but also connected to a parallel resonator.
  • the two metal pillars are connected to the top layer of the protective cap, and the two metal pillars pass through the top layer of the protective cap.
  • the metal bars are connected, and then connected to the ground plane of the multilayer carrier board by metal solder balls.
  • the entire loop is equivalent to parallel grounding inductance.
  • the series parasitic capacitance and parallel grounding inductance form a resonant circuit. By adjusting the parallel inductance, it is generated at the out-of-band suppression. Resonance to offset the adverse effects of parasitic capacitance.
  • Figure 1 is a schematic diagram of the structure of an existing bulk acoustic wave filter
  • Figure 2 is an equivalent circuit diagram of a conventional bulk acoustic wave filter
  • FIG. 3 is a schematic diagram of the structure of the integrated acoustic wave filter of the embodiment.
  • FIG. 4 is a structural side view of the integrated acoustic wave filter of the embodiment.
  • Figure 5 is an equivalent circuit diagram of the integrated acoustic wave filter of the embodiment
  • FIG. 6 is a schematic diagram of the structure of the bulk acoustic wave filter of the second embodiment
  • FIG. 7 is a schematic diagram of the structure of the three-body acoustic wave filter of the embodiment.
  • FIG. 8 is a schematic diagram of the structure of the four-bulk acoustic wave filter of the embodiment.
  • Fig. 9 is a graph showing the electrical performance of the integrated acoustic wave filter structure of the current structure and the embodiment.
  • each resonator is coupled to each other through the sealing ring to generate parasitic capacitance, which makes the out-of-band suppression deteriorate to different degrees.
  • the equivalent circuit is shown in Figure 2. Between series resonators and parallel resonance There are parasitic capacitances with small values between the filters and between the series resonators and the parallel resonators. These parasitic capacitances cause the filter's near-stop band suppression to deteriorate to varying degrees. For multiplexers, isolation will also deteriorate to varying degrees.
  • This embodiment provides a bulk acoustic wave filter with improved near-stop band suppression.
  • the sealing ring is connected to the reference ground plane of the carrier through a metal ball, thereby eliminating the coupling between the resonators and between the resonators and the sealing ring , Thereby improving near-stop band suppression.
  • the BAW filter includes:
  • Chip body 1
  • a plurality of resonators 2 are arranged in sequence on the surface of the chip main body 1, and the periphery of the resonators 2 is surrounded by a sealing ring 3;
  • the protective cap 4 is arranged on the chip body 1, the two sides of the sealing ring 3 are respectively connected to the surface of the protective cap 4 through the first metal pillar 7 and the second metal pillar 9 between the first metal pillar 7 and the second metal pillar 9 Connected by a metal strip 8;
  • the carrier board 5 is connected to the metal strip 8 through a plurality of metal solder balls 6.
  • the protective cap 4 is connected to the sealing ring 3 to jointly protect the internal resonator 2.
  • the carrier board 5 is formed by cross-stacking multiple layers of metal and dielectric.
  • both sides of the sealing ring 3 are connected to the surface of the protective cap 4 through the first metal pillar 7 and the second metal pillar 9 and are connected by the same metal strip 8 through the metal ball 6.
  • the sealing ring 3, the first metal pillar 7, the metal strip 8, the metal ball 6 and then to the carrier board ground plane or the sealing ring 3, the second metal pillar 9, the metal strip 8, the metal ball 6 and then The entire path to the ground plane of the carrier is equivalent to a parallel inductance.
  • the series parasitic capacitance and the parallel inductance form a resonant circuit. Please refer to Figure 5.
  • the resonant circuit forms a resonance near the stop band to suppress the parasitic Capacitance, thereby improving the rejection of the filter near the stop band.
  • the normal flip-chip bulk acoustic filter is shown in FIG. 4, the chip main body 1 and the protective cap 4 are flip-chip connected to the multi-layer carrier board 5 through a plurality of metal balls 6, and the bottom of the carrier board 5 is provided with pins for connection with other devices.
  • the function of the metal strip 8 is to divide the protective cap into two, separate the input signal from the output signal, and improve out-of-band suppression or isolation to a certain extent.
  • the periphery of the chip main body 1, the protective cap 4 and the carrier board 5 is filled with plastic encapsulant, which makes the filter structure more stable.
  • the chip body 1 is a silicon substrate, and the resonators 2 are sequentially arranged on the surface of the silicon substrate according to the principle diagram shown in FIG. 2, and the periphery of the resonators 2 is surrounded by a sealing ring 3.
  • the resonators 2 are coupled to each other through the sealing ring 3 to generate parasitic capacitance, which causes the out-of-band suppression or isolation of the chip to deteriorate.
  • a first metal post 7 and a second metal post 9 are respectively provided on opposite sides of the sealing ring 3.
  • the first metal post 7 and the second metal post 9 penetrate to the surface of the protective cap 4 and penetrate the protective cap 4.
  • the surface layer of is connected to the metal strip 8.
  • the metal strip 8 is connected to the ground plane of the multilayer carrier board 5 through the metal ball 6.
  • the entire path is equivalent to a parallel grounding inductance.
  • the series parasitic capacitance and the parallel grounding inductance form a resonant circuit, as shown in Figure 5
  • the box by adjusting the size of the parallel inductance, resonance occurs at the out-of-band suppression, so as to offset the adverse effects of parasitic capacitance.
  • the dashed line is the electrical performance curve of the comparative structure Figure 1
  • the solid line is the electrical performance curve shown in Figure 3, with a 5dB improvement in near-stop band suppression.
  • the bulk acoustic wave filter includes a chip main body 1, a protective cap 4 and a carrier board 5.
  • the chip main body 1 is arranged on a silicon substrate; a plurality of resonators 2 are arranged in sequence on the chip main body 1, and the periphery of the plurality of resonators 2 is surrounded by a sealing ring 3, and both sides of the sealing ring 3 pass through a first metal pillar 7 and the second metal post 9 are connected to the surface of the protective cap 4, the first metal post 7 and the second metal post 9 are respectively connected with a metal strip 8, and the two metal strips 8 are respectively connected to the ground plane of the carrier through metal balls.
  • the protective cap 4 is connected to the sealing ring 3 to jointly protect the internal resonator 2.
  • both sides of the sealing ring 3 are connected to the surface of the protective cap 4 through the first metal pillar 7 and the second metal pillar 9, and then each is connected to the ground plane of the carrier board 5 through a metal ball 6; the entire path It is equivalent to a parallel inductor.
  • the series parasitic capacitance and the parallel inductance form a resonant circuit.
  • the resonant circuit forms a resonance near the stop band suppression to suppress the parasitic capacitance, thereby improving the suppression of the filter near the stop band.
  • the bulk acoustic wave filter includes a chip main body 1, a protective cap 4 and a carrier board 5.
  • the chip body 1 is arranged on a silicon substrate; a plurality of resonators 2 are arranged in sequence on the chip body 1, and the periphery of the plurality of resonators 2 is surrounded by a sealing ring 3, and one side of the sealing ring 3 passes through a first metal pillar 7 is connected to the surface of the protective cap 4, the first metal pillar 7 is connected to a metal strip 8 which is connected to the ground plane of the carrier board 5 through a metal ball 6.
  • the protective cap 4 is connected to the sealing ring 3 to jointly protect the internal resonator 2.
  • one side of the sealing ring 3 is connected to the surface of the protective cap 4 through the first metal pillar 7, and then connected to the ground plane of the carrier board 5 through the metal ball 6; the entire path is equivalent to a parallel inductor,
  • the series parasitic capacitance and the parallel inductance form a resonant circuit.
  • the resonant circuit forms a resonance near the stop band suppression to suppress the parasitic capacitance, thereby improving the suppression of the filter near the stop band.
  • the bulk acoustic wave filter includes a chip main body 1, a protective cap 4 and a carrier board 5.
  • a plurality of resonators 2 are arranged on the surface of the chip body 1 in sequence, and the periphery of the plurality of resonators 2 is surrounded by a sealing ring 3; a protective cap 4 is arranged on the chip body 1, and the two sides of the sealing ring 3 are respectively.
  • the first metal pillar 7 and the second metal pillar 9 are connected to the top layer of the protective cap 4, and the first metal pillar 7 and the second metal pillar 9 are connected by a metal strip 8; the metal strip 8 is connected to each other through a plurality of metal solder balls 6
  • the metal bars 8 are connected; the first metal post 7 and the second metal post 9 are also respectively connected to the corresponding parallel resonators.
  • the protective cap 4 is connected to the sealing ring 3 to jointly protect the internal resonator 2.
  • the carrier board 5 is formed by cross-stacking multiple layers of metal and dielectric.
  • the first metal pillar 7 and the second metal pillar 9 are not only connected to the sealing ring 3, but also connected to a parallel resonator 2.
  • the two metal pillars are connected to the surface of the protective cap 4.
  • a metal pillar is connected on the surface of the protective cap 4 by a metal strip 8 and then connected to the ground plane of the multilayer carrier board 5 by a metal ball 6.
  • the entire loop is equivalent to a parallel grounding inductance, and the series parasitic capacitance and parallel grounding inductance form a resonance circuit.
  • This embodiment provides an electronic device, including the bulk acoustic wave filter described in any one of Embodiment 1, Embodiment 2 or Embodiment 3.
  • the electronic device is a duplexer or a multiplexer.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

一种改善近阻带抑制的体声波滤波器及电子设备，将密封圈(3)通过焊球(6)连接到载板(5)的参考地平面，从而消除各谐振器(2)之间以及各谐振器(2)与密封圈(3)之间的耦合，进而改善近阻带抑制。该体声波滤波器，包括：芯片主体(1)、保护帽(4)及载板(5)；所述芯片主体(1)的表层上依次排布有多个谐振器(2)，所述多个谐振器(2)的外围绕设有密封圈(3)；所述保护帽(4)设置在芯片主体(1)上，密封圈(3)的两侧分别连接有金属柱(7,9)，两个金属柱(7,9)的底端分别与密封圈(3)相连，顶端贯穿保护帽(4)表层与一金属条(8)相连，所述金属条(8)通过金属球(6)与载板(5)相连。

Description

一种体声波滤波器及电子设备 技术领域
本发明涉及体声波滤波器技术领域，特别地涉及一种改善近阻带抑制的体声波滤波器及电子设备。
背景技术
随着射频信号处理芯片发展的日益高速化、小型化、集成化，芯片中的电学抑制度和隔离度问题越发凸显，成为影响芯片电学性能的重要因素。
为了使器件更加小型化，各谐振器间间隔进一步减小；谐振器外围由金属密封圈保护，以防气体、液体等污染芯片，各谐振器与密封圈间的间隔同样进一步减小；间距减小导致各谐振器通过密封圈互相耦合产生寄生电容，从而使得带外抑制有不同程度的恶化，串联谐振器之间、并联谐振器之间以及串联谐振器和并联谐振器之间都产生数值较小的寄生电容，这些寄生电容导致滤波器的近阻带抑制有不同程度的恶化。而对于多工器来说，隔离度也会有不同程度的恶化。
传统的改善芯片抑制度和隔离度的方法主要是通过拉开容易产生干扰的谐振器或者谐振器与金属密封环之间的空间距离。但随着芯片尺寸的日益减小，这个技术方案的局限性越发凸显。受限于空间限制，射频滤波器芯片制造领域亟需一种新的能够在不增加空间距离的前提下，提升芯片抑制度和隔离度的技术方案。
发明内容
有鉴于此，本发明提供一种改善近阻带抑制的体声波滤波器及电子设备，将密封圈通过焊球连接到载板的参考地平面，从而消除各谐振器之间以及各谐振器与密封圈之间的耦合，进而改善近阻带抑制。
本发明一方面提供的一种体声波滤波器的技术方案是：
一种体声波滤波器，包括：芯片主体、保护帽及载板；
所述芯片主体的表层上依次排布有多个谐振器，所述多个谐振器的外围绕设有密封圈；所述保护帽设置在芯片主体上，密封圈的相平行两侧分别连接有金属柱，两个金属柱的底端分别与密封圈相连，顶端贯穿保护帽表层与一金属条相连，所述金属条通过金属球与载板相连。
本发明另一方面提供的一种体声波滤波器的技术方案是：
一种体声波滤波器，包括：芯片主体、保护帽及载板；
所述芯片主体的表层上依次排布有多个谐振器，所述多个谐振器的外围绕设有密封圈；所述保护帽设置在芯片主体上，密封圈的两侧分别连接有金属柱，两个金属柱的底端与密封圈相连，顶端贯穿保护帽表层分别与相应的金属条相连，两个金属条分别通过金属球与载板相连。
本发明另一方面提供的一种体声波滤波器的技术方案是：
一种体声波滤波器，包括：芯片主体、保护帽及载板；
所述芯片主体的表层上依次排布有多个谐振器，所述多个谐振器的外围绕设有密封圈；所述保护帽设置在芯片主体上，密封圈的一侧连接有金属柱，所述金属柱的底端与密封圈相连，顶端贯穿保护帽表层与一金属条相连，所述金属条分别通过金属球与载板相连。
本发明另一方面提供的一种体声波滤波器的技术方案是：
一种体声波滤波器，包括：芯片主体、保护帽及载板；
所述芯片主体的表层上依次排布有多个谐振器，所述多个谐振器的外围绕设有密封圈；所述保护帽设置在芯片主体上，密封圈的两侧分别连接有金属柱，两个金属柱的底端与密封圈相连，顶端贯穿保护帽表层与一金属条相连，所述金属条通过金属球与载板相连；所述两个金属柱的底端还分别与相应的谐振器相连。
本发明另一方面提供的一种电子设备的技术方案是：
一种电子设备，包括如上所述的体声波滤波器。
通过上述技术方案，本发明的有益效果为：
(1)本发明通过将密封圈连接至载板的地平面，从而抵消寄生电 容，提高体声波滤波器带外抑制；
(2)本发明在密封圈相对两侧分别设置金属柱，两金属柱贯穿至保护帽的表层，通过保护帽的表层与金属条相连，再由金属球连接至多层载板的地平面，整个路径等效为一个并联接地电感，串联寄生电容和并联接地电感形成谐振电路，通过调整并联电感大小，在带外抑制处产生谐振，从而抵消寄生电容产生的不利影响；
(3)本发明在密封圈相对两侧分别设置金属柱，两金属柱贯穿至保护帽的表层，再各自由金属焊球连接至多层载板的地平面，整个路径等效为一个并联接地电感，串联寄生电容和并联接地电感形成谐振电路，通过调整并联电感大小，在带外抑制处产生谐振，从而抵消寄生电容产生的不利影响；
(4)本发明在密封圈单侧设置金属柱，金属柱贯穿至保护帽的表层，再由金属焊球连接至多层载板的地平面，整个路径等效为一个并联接地电感，串联寄生电容和并联接地电感形成谐振电路，通过调整并联电感大小，在带外抑制处产生谐振，从而抵消寄生电容产生的不利影响；
(5)本实施例在密封圈相对两侧设置的金属柱不仅与密封圈相连，还与某并联谐振器相连，两金属柱连通至保护帽的顶层，两个金属柱在保护帽的顶层通过金属条相连，再由金属焊球连接至多层载板的地平面，整个回路等效为并联接地电感，串联寄生电容和并联接地电感形成谐振电路，通过调整并联电感大小，在带外抑制处产生谐振，从而抵消寄生电容产生的不利影响。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1是现有的体声波滤波器结构示意图；
图2是现有的体声波滤波器等效电路图；
图3是实施例一体声波滤波器的结构示意图；
图4是实施例一体声波滤波器的结构侧视图；
图5是实施例一体声波滤波器的等效电路图；
图6是实施例二体声波滤波器的结构示意图；
图7是实施例三体声波滤波器的结构示意图；
图8是实施例四体声波滤波器的结构示意图；
图9是现在结构与实施例一体声波滤波器结构的电性能曲线图。
具体实施方式
下面结合附图与实施例对本发明作进一步说明。
如图1所示，为了使器件更加小型化，各谐振器间间隔进一步减小；谐振器外围由金属密封圈保护，以防气体、液体等污染芯片，各谐振器与密封圈间的间隔同样进一步减小；正由于间距减小导致各谐振器通过密封圈互相耦合产生寄生电容，从而使得带外抑制有不同程度的恶化，等效电路如图2所示，串联谐振器之间、并联谐振器之间以及串联谐振器和并联谐振器之间都存在数值较小的寄生电容，正由于这些寄生电容导致滤波器的近阻带抑制有不同程度的恶化。而对于多工器来说，隔离度也会有不同程度的恶化。
实施例一
本实施例提供一种改善近阻带抑制的体声波滤波器，将密封圈通过金属球连接到载板的参考地平面，从而消除各谐振器之间以及各谐振器与密封圈之间的耦合，进而改善近阻带抑制。
请参阅附图3，所述体声波滤波器包括：
芯片主体1；
多个谐振器2，依次排布在芯片主体1表层上，谐振器2的外围由密封圈3环绕；
保护帽4，设置在芯片主体1上，密封圈3的两侧分别通过第一金属柱7和第二金属柱9连通至保护帽4表层，第一金属柱7和第二金属柱9之间通过一金属条8相连；
载板5，通过多个金属焊球6与金属条8连接。
在本实施例中，所述保护帽4与密封圈3相连共同保护内部谐振器2。
在本实施例中，所述载板5由多层金属与介质交叉堆叠而成。
本实施例提出的体声波滤波器，密封圈3两侧通过第一金属柱7和第二金属柱9连通至保护帽4表层，再由同一金属条8相连，该金属条8通过金属球6连接至载板5地平面，密封圈3、第一金属柱7、金属条8、金属球6再到载板地平面或密封圈3、第二金属柱9、金属条8、金属球6再到载板地平面的整个路径相当于一个并联电感，串联寄生电容与并联电感形成谐振电路，请参阅附图5，通过调整并联电感大小，使得谐振电路在近阻带抑制处形成谐振来抑制寄生电容，从而提升滤波器近阻带的抑制度。
正常倒装的体声滤波器如图4所示，芯片主体1和保护帽4倒装通过多个金属球6连接至多层载板5，载板5底部分布引脚，以便与其它器件相连。
在本实施例中，所述金属条8的作用是将保护帽一分为二，将输入信号和输出信号隔开，一定程度上改善带外抑制或隔离度。
在本实施例中，所述芯片主体1、保护帽4和载板5外围填充塑封胶，使得滤波器结构更加稳定。
在本实施例中，所述芯片主体1为硅衬底，各谐振器2按照如图2所示的原理图依次排布在硅衬底表层，谐振器2外围由密封圈3环绕。各谐振器2通过密封圈3互相耦合产生寄生电容，导致芯片的带外抑制或隔离度恶化。
如图3所示，密封圈3相对两侧分别设置有第一金属柱7和第二金属柱9，第一金属柱7和第二金属柱9贯穿至保护帽4的表层，贯穿保护帽4的表层与金属条8相连，金属条8通过金属球6连接至多层载板5的地平面，整个路径等效为一个并联接地电感，串联寄生电容和并联接地电感形成谐振电路，如图5中方框所示，通过调整并联电感大小，在带外抑制处产生谐振，从而抵消寄生电容产生的不利影响。如图9所示，虚线是对比结构图1的电性能曲线，实线是图3所示的的电性能曲线，近阻带抑制有5dB的提升。
实施例二
本实施例提供一种体声波滤波器，请参阅附图6，所述体声波滤波器包括芯片主体1、保护帽4及载板5。
芯片主体1设置在硅衬底上；芯片主体1上依次排布有多个谐振器2，所述多个谐振器2的外围由密封圈3环绕，密封圈3的两侧通过第一金属柱7和第二金属柱9连通至保护帽4表层，第一金属柱7和第二金属柱9分别连接有金属条8，两个金属条8分别通过金属球连接至载板地平面。
在本实施例中，通过保护帽4与密封圈3相连共同保护内部谐振器2。
本实施例提出的体声波滤波器，密封圈3两侧通过第一金属柱7和第二金属柱9连通至保护帽4表层，再各自通过金属球6连接至载板5地平面；整个路径相当于一个并联电感，串联寄生电容与并联电感形成谐振电路，通过调整并联电感大小，使得谐振电路在近阻带抑制处形成谐振来抑制寄生电容，从而提升滤波器近阻带的抑制度。
实施例三
本实施例提供一种体声波滤波器，请参阅附图7，所述体声波滤波器包括芯片主体1、保护帽4及载板5。
芯片主体1设置在硅衬底上；芯片主体1上依次排布有多个谐振器2，所述多个谐振器2的外围由密封圈3环绕，密封圈3的一侧通过第一金属柱7连通至保护帽4表层，第一金属柱7连接有一金属条8，金属条8通过金属球6连接至载板5地平面。
在本实施例中，通过保护帽4与密封圈3相连共同保护内部谐振器2。
本实施例提出的体声波滤波器，密封圈3某一侧通过第一金属柱7连通至保护帽4表层，再通过金属球6连接至载板5地平面；整个路径相当于一个并联电感，串联寄生电容与并联电感形成谐振电路，通过调整并联电感大小，使得谐振电路在近阻带抑制处形成谐振来抑制寄生电容，从而提升滤波器近阻带的抑制度。
实施例四
本实施例提供一种体声波滤波器，请参阅附图8，所述体声波滤波器包括：芯片主体1、保护帽4和载板5。
所述芯片主体1的表层依次排布有多个谐振器2，所述多个谐振器 2的外围由密封圈3环绕；保护帽4，设置在芯片主体1上，密封圈3的两侧分别通过第一金属柱7和第二金属柱9连通至保护帽4顶层，第一金属柱7和第二金属柱9之间通过一金属条8相连；金属条8通过多个金属焊球6与金属条8连接；所述第一金属柱7和第二金属柱9还分别与相应的并联谐振器相连。
在本实施例中，所述保护帽4与密封圈3相连共同保护内部谐振器2。
在本实施例中，所述载板5由多层金属与介质交叉堆叠而成。
本实施例提出的体声波滤波器中，第一金属柱7和第二金属柱9不仅与密封圈3相连，还与某并联谐振器2相连，两金属柱连通至保护帽4的表层，两个金属柱在保护帽4的表层通过金属条8相连，再由金属球6连接至多层载板5的地平面，整个回路等效为并联接地电感，串联寄生电容和并联接地电感形成谐振电路，通过调整并联电感大小，在带外抑制处产生谐振，从而抵消寄生电容产生的不利影响。
实施例五
本实施例提供一种电子设备，包括实施例一、实施例二或实施例三中任一实施例所述的体声波滤波器。
在本实施例中，所述电子设备为双工器或者多工器。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (9)

  1. 一种体声波滤波器，其特征在于，包括：芯片主体、保护帽及载板；
    所述芯片主体的表层上依次排布有多个谐振器，所述多个谐振器的外围绕设有密封圈；所述保护帽设置在芯片主体上，密封圈的相平行两侧分别连接有金属柱，两个金属柱的底端分别与密封圈相连，顶端贯穿保护帽表层与一金属条相连，所述金属条通过金属球与载板相连。
  2. 根据权利要求1所述的体声波滤波器，其特征在于，所述芯片主体为硅衬底。
  3. 根据权利要求1所述的体声波滤波器，其特征在于，所述金属球的数量为一个或两个。
  4. 根据权利要求1所述的体声波滤波器，其特征在于，所述载板由多层金属与介质交叉堆叠而成。
  5. 根据权利要求4所述的体声波滤波器，其特征在于，所述载板的底部分布有引脚。
  6. 一种体声波滤波器，其特征在于，包括：芯片主体、保护帽及载板；
    所述芯片主体的表层上依次排布有多个谐振器，所述多个谐振器的外围绕设有密封圈；所述保护帽设置在芯片主体上，密封圈的两侧分别连接有金属柱，两个金属柱的底端与密封圈相连，顶端贯穿保护帽表层分别与相应的金属条相连，两个金属条分别通过金属球与载板相连。
  7. 一种体声波滤波器，其特征在于，包括：芯片主体、保护帽及载板；
    所述芯片主体的表层上依次排布有多个谐振器，所述多个谐振器的外围绕设有密封圈；所述保护帽设置在芯片主体上，密封圈的一侧连接有金属柱，所述金属柱的底端与密封圈相连，顶端贯穿保护帽表层与一金属条相连，所述金属条分别通过金属球与载板相连。
  8. 一种体声波滤波器，其特征在于，包括：芯片主体、保护帽及载板；
    所述芯片主体的表层上依次排布有多个谐振器，所述多个谐振器的外围绕设有密封圈；所述保护帽设置在芯片主体上，密封圈的两侧分别连接有金属柱，两个金属柱的底端与密封圈相连，顶端贯穿保护帽表层与一金属条相连，所述金属条通过金属球与载板相连；所述两个金属柱的底端还分别与相应的并联谐振器相连。
  9. 一种电子设备，其特征在于，包括权利要求1至8中任一项所述的体声波滤波器。
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