WO2021027406A1 - 发光封装组件、发光模组以及显示屏 - Google Patents
发光封装组件、发光模组以及显示屏 Download PDFInfo
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- WO2021027406A1 WO2021027406A1 PCT/CN2020/098499 CN2020098499W WO2021027406A1 WO 2021027406 A1 WO2021027406 A1 WO 2021027406A1 CN 2020098499 W CN2020098499 W CN 2020098499W WO 2021027406 A1 WO2021027406 A1 WO 2021027406A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the invention relates to the field of display technology, in particular to a light-emitting package assembly, a light-emitting module and a display screen.
- small-pitch LEDs light emitting Diode, light-emitting diode
- Small-pitch LED display refers to indoor LED display with LED dot pitch of P2.5 and below.
- Reducing the size of the LED device can increase the resolution of the display, thereby expanding the application areas of the LED display, such as mobile phones, car panels, TVs, computers, video conferences, etc.
- the package sizes of mainstream display screens are 2121 and 1010.
- 0808 or even smaller package sizes have appeared on the market.
- the pixel pitch of LED display screens shrinks, the number of packaged devices per unit area is increasing, and the existing LED display screens mostly adopt a single package form, which makes the difficulty of packaging exponentially rising.
- RGB red, green and blue
- Each small package device has four pins. The bottom of the corresponding substrate requires 4 pads. Therefore, the number of pads per unit area is too much, which increases Difficulty of packaging.
- One of the objectives of the present invention is to provide an all-in-one light emitting module, which can reduce the number of pads and reduce the packaging difficulty.
- the present invention provides an all-in-one light-emitting module, including: N light-emitting units; N is an integer greater than 1, a first electrode pad and b second electrode pads, and the N light-emitting units
- the number of the first electrode pads is the same as the number of the light emitting units; the N common ends of the N light emitting units are connected to the N first electrode pads in a one-to-one correspondence.
- each of the light emitting units includes a red light chip, a green light chip and a blue light chip; the red light chips of all light emitting units are connected to the first second electrode pad; the green light of all light emitting units The chip is connected to the second second electrode pad; the blue light chips of all light-emitting units are connected to the third second electrode pad.
- each light emitting unit further includes: a white light chip; the white light chips of all light emitting units are connected to the fourth second electrode pad.
- the number of the light-emitting units is four; the number of the first electrode pads is four; the common ends of the four light-emitting units are connected to the four first electrodes in a one-to-one correspondence Pad.
- the number of the light-emitting units is two; the number of the first electrode pads is two; the common ends of the two light-emitting units are connected to the two first electrodes in a one-to-one correspondence. Pad.
- the number of the first electrode pad is one; the N common terminals of the N light-emitting units are all connected to the same first electrode pad; each light-emitting chip is individually connected to one The second electrode pad; the number of the second electrode pad is n ⁇ N.
- each of the light-emitting units includes three light-emitting chips: a red light chip, a green light chip, and a blue light chip; the number of the second electrode pads is 3 ⁇ N.
- each of the light-emitting units includes four light-emitting chips: a red light chip, a green light chip, a blue light chip, and a white light chip; the number of the second electrode pads is 4 ⁇ N.
- the above-mentioned all-in-one light emitting module further includes: a light-shielding material wrapped on the side of the light-emitting chip and exposing electrodes of the light-emitting chip; the light-shielding material and all light-emitting chips constitute the light-emitting module The light-emitting layer.
- the above-mentioned all-in-one light-emitting module further includes: a first circuit layer, a via circuit layer, and a pad layer sequentially disposed under the light-emitting layer;
- the first circuit layer includes: a first insulating layer Layer, attached to the light-emitting layer; metal wiring layer, embedded in the first insulating layer, connected to the electrode of the light-emitting chip;
- the through-hole circuit layer includes: a second insulating layer attached to the The first insulating layer, the second insulating layer is provided with a through hole; a pad lead layer is provided in the through hole and is connected to the metal wiring layer; the pad layer is provided with the first electrode welding The pad and the second electrode pad, the first electrode pad and the second electrode pad are connected to the metal wiring layer through the pad lead layer.
- the pad layer further includes an electrode trace, which connects the pad lead layer and the first electrode pad, or connects the pad lead layer and the second electrode pad.
- the pad layer further includes: a third insulating layer, which is filled around the first electrode pad, the second electrode pad, and the electrode trace.
- the first insulating layer, the second insulating layer or the third insulating layer is made of black insulating material.
- the present application also provides a display screen formed by splicing any of the above-mentioned all-in-one light-emitting modules.
- the all-in-one light-emitting module provided in this application reduces the number of pads , Reduce the difficulty of packaging.
- Another object of the present invention is to provide an ultra-fine pitch light emitting diode (LED) package assembly, which includes a plurality of pixel regions PX arranged in an Nx ⁇ Ny matrix. Each pixel area PX may be referred to as a pixel.
- LED light emitting diode
- the number of pads of the package assembly can be reduced as much as possible, on the one hand, it is convenient for wiring, on the other hand, it is beneficial to the application of the patch and reduces the risk of short circuit.
- the N light-emitting units are arranged in Nx rows and Ny columns, and the number P of the pads is guaranteed to take the minimum value.
- the a LED chips of each light emitting unit are arranged in a row according to the first direction Nx, and the first and second electrodes of each LED chip are arranged side by side according to the second direction Ny.
- Nx:Ny 3:1, where k is an integer greater than or equal to zero.
- the distance D1 between adjacent light-emitting units is preferably 0.8 mm or less, where N can be an integer greater than 4, such as 4, 6, 8, 9, 16, 32, or 64.
- N can be an integer greater than 4, such as 4, 6, 8, 9, 16, 32, or 64.
- D1 can be 0.4-0.8, and when N is more than 8, D can be 0.1-0.4.
- the first wiring layer electrically connects the first electrodes of the same type of LED chips located in the same row from the first direction, and electrically connects the second electrodes of the LED chips located in the same column from the second direction Ny.
- the wiring layer includes a first wiring layer, a via layer, and a second wiring layer, wherein the first wiring layer is formed on the second surface of the plurality of LED chips to connect the The first electrode and the second electrode of a plurality of LED chips, the via layer is formed on the first wiring layer, and is electrically connected to the first wiring layer, and the second wiring layer is formed on the On the through hole layer, an electrical connection is formed with the through hole layer.
- the thickness of the through hole layer is 20 ⁇ 80 ⁇ m.
- the total thickness of the packaging component is between 100 and 500 ⁇ m. In some embodiments, the total thickness of the packaging component is between 120-200 ⁇ m. In some embodiments, the total thickness of the package component is between 320-500 ⁇ m.
- the wiring layer includes multiple layers of conductive lines electrically isolated from each other, and the number of layers of the conductive lines is four or less.
- the thickness of at least one layer of the multilayer conductive circuit is 50 ⁇ m or less. In some embodiments, the thickness of at least one layer of the multilayer conductive circuit is 60 ⁇ m or more.
- this embodiment adopts a packaging form without a substrate, the LED chips of a plurality of light-emitting units are fixed by the packaging layer, and a multilayer wiring layer is formed on the back of the multilayer light-emitting unit in series and parallel with the multiple light-emitting units LED chips, in which the first wiring layer connects the LED chips of multiple pixel areas in series and parallel, and rewiring through the through hole layer and the second wiring layer to form an integrated thin and small-pitch light-emitting diode package assembly Secondly, through reasonable wiring layer design, on the one hand, the number of external pads of the package component can be reduced, thereby reducing the difficulty of application-side patching, and improving the reliability of the product; furthermore, the number of wiring layers is not more than No more than four groups can ensure the thickness of the product is light and thin, which is beneficial to the light and thin of the terminal product.
- Another object of the present invention is to provide an N-in-one package that has excellent heat dissipation performance, is not easy to short-circuit, and is beneficial to the application of terminal patches.
- the present invention provides an N-in-one package, the package includes: N light-emitting units, N is an integer greater than 1 and less than or equal to 64, and sqrt(N) is greater than 1.
- Integer wherein in any one of the length direction and the width direction of the package, the number of the light-emitting units is equal to sqrt(N); each light-emitting unit includes 1 red light chip, 1 blue light chip, and 1 A green chip, defining the distance between any two adjacent chips of the same wavelength as X, the length and width of the package body are both equal to X*sqrt(N);
- the electrode pad, the electrode pad Are electrically connected to the N light-emitting units, and the total number of the electrode pads is within the range of ⁇ 1 after taking an integer value in the 2*sqrt (3N) direction, where the length and width directions of the outermost part of the package body In either direction, the number of the electrode pads is within the range of sqrt [2
- the length and width of the electrode pad are equal, and both are greater than or equal to 0.1 mm.
- the distance between two adjacent electrode pads is greater than or equal to 0.1 mm.
- the length and width of the package are equal.
- the number of the light-emitting units in the length direction of the package is equal to the number of the light-emitting units in the width direction of the package.
- the electrode pad includes a first electrode pad and a second electrode pad, and each chip in each light-emitting unit is electrically connected to one first electrode pad and one For the second electrode pads, the chips of different wavelengths are electrically connected to the first electrode pads and the second electrode pads of different combinations.
- the number of the first electrode pads is the same as the number of the light emitting units, and the N common ends of the N light emitting units are electrically connected to the N first electrode pads in a one-to-one correspondence. .
- the present invention also provides a display screen, which includes a plurality of any one of the above-mentioned N-in-one packages.
- the ratio of the diagonal size, the length size and the width size of the display screen is 18.36 : 16: 9.
- the N-in-one package provided by the present invention includes N light-emitting units and electrode pads electrically connected to them.
- Each light-emitting unit includes 1 red light chip, 1 blue light chip and 1 Green light chip, wherein the distance between any two adjacent chips of the same wavelength X and the number N of the light-emitting units satisfies X ⁇ 0.2*sqrt [2*sqrt(3N)] ⁇ / sqrt(N).
- the N-in-one package of the present invention can set the most suitable number N of light-emitting units when the chip spacing X of any two adjacent same wavelengths is constant, so as to ensure
- the length and width dimensions of the electrode pads of the package are both greater than or equal to 0.1mm, which can not only meet the high-density requirements of small-pitch LED packages, but also enable the package to have sufficient heat dissipation capacity to effectively protect the product Reliability, effectively avoid the risk of short circuit, and facilitate the application of the patch.
- FIG. 1 is a schematic diagram of a circuit principle of a 16-in-1 light-emitting module according to an embodiment of the application;
- FIG. 2 is a schematic diagram of the circuit principle of a four-in-one light-emitting module shown in an embodiment of the application;
- FIG. 3 is a schematic diagram of the circuit principle of the two-in-one light-emitting module shown in an embodiment of the application;
- FIG. 4 is a schematic diagram of the circuit principle of a four-in-one light-emitting module according to another embodiment of the application.
- FIG. 5 is a schematic cross-sectional view of an all-in-one light emitting module shown in an embodiment of the present application
- FIG. 6 is a schematic diagram of the wiring of the first circuit layer of the four-in-one light-emitting module according to an embodiment of the present application.
- FIG. 7 is a schematic diagram of the through-hole circuit layer of the four-in-one light-emitting module in the embodiment corresponding to FIG. 6;
- FIG. 8 is a schematic diagram of the pad layer of the four-in-one light-emitting module in the embodiment corresponding to FIG. 6;
- FIG. 9 is a superimposed schematic diagram of the first circuit layer, the via circuit layer and the pad layer in FIGS. 6-8;
- FIG. 10 is a schematic diagram of the wiring of the first circuit layer of a four-in-one light-emitting module according to another embodiment of the present application.
- FIG. 11 is a schematic diagram of the through-hole circuit layer of the four-in-one light emitting module in the embodiment corresponding to FIG. 10;
- FIG. 12 is a schematic diagram of the pad layer of the four-in-one light-emitting module in the embodiment corresponding to FIG. 10;
- FIG. 13 is a superimposed schematic diagram of the first circuit layer, the via circuit layer and the pad layer in FIGS. 10-12;
- FIG. 14 is a schematic diagram of the wiring of the first circuit layer of the two-in-one light-emitting module according to an embodiment of the present application.
- FIG. 15 is a schematic diagram of the through-hole circuit layer of the two-in-one light-emitting module in the embodiment corresponding to FIG. 14;
- FIG. 16 is a schematic diagram of the pad layer of the two-in-one light-emitting module in the embodiment corresponding to FIG. 14;
- FIG. 17 is a superimposed schematic diagram of the first circuit layer, the via circuit layer and the pad layer in FIGS. 14-16;
- FIG. 18 is a perspective view illustrating the structure of the light emitting diode (LED) package assembly of the present invention.
- 19 is a schematic top view illustrating the arrangement of the LED chips of the LED package assembly of an embodiment of the present invention.
- 20 is a schematic side sectional view illustrating that the LED chip of the LED package assembly of this embodiment is a conventional LED chip
- Figure 21 is a schematic side sectional view illustrating the structure of an LED package assembly according to an embodiment of the present invention.
- 22 is a schematic plan view illustrating the first wiring layer of the LED package assembly of this embodiment.
- FIG. 23 is a schematic top view illustrating the through hole layer of the light emitting diode package assembly of the present invention.
- 24 is a schematic top view illustrating the second wiring layer of the LED package assembly of this embodiment.
- Figure 25 is a circuit connection diagram illustrating the circuit connection of the LED package assembly of this embodiment.
- FIG. 26 is a schematic top view illustrating the arrangement of LED chips of the LED package assembly of an embodiment of the present invention.
- Figure 27 is a circuit connection diagram illustrating the circuit connection of the LED package assembly of this embodiment.
- 28 and 29 are schematic diagrams of the structure of an N-in-one package according to an embodiment of the present invention.
- All-in-one light emitting module refers to the integration of multiple light emitting units on a single package module.
- a light-emitting unit can be equivalent to a small package, including RGB (red, green and blue) chips.
- An LED display screen can be formed by splicing multiple light-emitting modules, thereby effectively solving the problem of low efficiency of a single package.
- the all-in-one light-emitting module can be two-in-one, four-in-one, six-in-one...N-in-one light-emitting module.
- N-in-one means that N light-emitting units are integrated on a single package module.
- the all-in-one light-emitting module provided in the present application includes: N light-emitting units (N is an integer greater than 1), a first electrode pads and b second electrode pads. A first electrode pads and b second electrode pads are connected to N light emitting units. The first electrode pad and the second electrode pad have opposite polarities.
- the first electrode may be an anode and the second electrode is a cathode.
- the first electrode may be a cathode and the second electrode is an anode.
- that different light-emitting chips are connected to different combinations of first electrode pads and second electrode pads means that there are no two light-emitting chips connected to the same first electrode pad and second electrode pad, so that light can be achieved. Separate control of the chip.
- a light-emitting chip needs to be connected to an anode pad and a cathode pad to normally emit light. Therefore, when there are a anode pads and b cathode pads, it can be considered that a ⁇ b chips can be connected.
- the four-in-one light-emitting module should have required 16 electrode pads.
- the total number of pads can be 13 (ie 1+12), 7 (ie 3+4) or 8 (ie 2+6).
- a light-emitting unit contains three types of RGB light-emitting chips
- the product of b (a ⁇ b) is equal to 6.
- a and b can be 1 and 6, 2 and 3. That is, the total number of pads can be 7 or 5.
- the number of pads of the two-in-one light-emitting module can be five.
- the two-in-one light-emitting module should be connected to 8 electrode pads.
- the two-in-one light-emitting module provided in this application can reduce the number of pads to 7 or 5.
- the number of pads of the 16-in-1 light-emitting module can be 14, V1-V8 can be 8 first electrode pads, and u1-u6 can be 6 The second electrode pad.
- the 16-in-1 light-emitting module provided in this application can reduce the number of pads to at least 14.
- the number of first electrode pads is the same as the number of light emitting units; the N common ends of the N light emitting units are connected to the N first electrode pads in a one-to-one correspondence.
- a light-emitting unit has a common terminal, which can be a common anode or a common cathode.
- the common anode or common cathode of a light-emitting unit can be connected to a first electrode pad.
- N-in-one light-emitting module there are N light-emitting units, so the common ends of the N light-emitting units are connected to the N-th one in one correspondence.
- An electrode pad For example, a four-in-one light-emitting module has four light-emitting units, so there are four first electrode pads, and the common anode of one light-emitting unit is connected to one first electrode pad.
- the first electrode may refer to the anode.
- the first electrode may be a cathode at this time.
- the number n of light-emitting chips is the same. This can reduce the number of pads.
- each light-emitting unit may include three light-emitting chips, a red light chip, a green light chip, and a blue light chip.
- the number of second electrode pads may be three.
- the red light chips of all light-emitting units are connected to the first second electrode pad; the green light chips of all light-emitting units are connected to the second second electrode pad; the blue light chips of all light-emitting units are connected to the third second electrode Pad.
- each light-emitting unit further includes: a white light chip; the white light chips of all the light-emitting units are connected to the fourth second electrode pad. That is, each light-emitting unit includes four light-emitting chips: red light chip, green light chip, blue light chip and white light chip.
- the number of second electrode pads may be four, and light-emitting chips of the same color are connected to the same second electrode pad. Therefore, even if a white light chip is added to each light-emitting unit, only one electrode pad is needed for the all-in-one light-emitting module, which reduces the number of pads.
- the all-in-one light-emitting module provided in this application may be a four-in-one light-emitting module.
- the number of light-emitting units is four; the number of first electrode pads is four; the common ends of the four light-emitting units are connected to the four first electrode pads one by one.
- the first electrode pad may be an anode pad or a cathode pad, and the common anode or common cathode of one light emitting unit is connected to one first electrode pad.
- the red light chips of all light-emitting units can be connected to the first second electrode pad, and the green light chips of all light-emitting units can be connected to the second second electrode pad; the blue light chips of all light-emitting units can be connected to the third electrode pad. A second electrode pad. If there are white light chips, the white light chips of all light-emitting units are connected to the fourth second electrode pad. Therefore, when there are three types of light-emitting chips in the four-in-one light-emitting module, the number of pads can be reduced to 7, which reduces the number of pads of the four-in-one light-emitting module and reduces the packaging difficulty.
- Figure 2 is a schematic diagram of the circuit connection of a four-in-one light-emitting module.
- the four-in-one light-emitting module includes four light-emitting units 11, the total number of pads can be 7, 21a, 21b, 21c, 21d can be the first electrode pads, 23a, 24b, 22c can be The second electrode pad, the first electrode pad is connected to the anode, and the second electrode pad is connected to the cathode, so as to minimize the number of pads and reduce the packaging difficulty.
- the all-in-one light-emitting module provided in the present application may be a two-in-one light-emitting module, wherein the number of light-emitting units is two; the number of first electrode pads is two; and two light-emitting units The common terminals of are connected to the two first electrode pads one by one.
- the first electrode pad may be an anode pad or a cathode pad, and the common anode or common cathode of one light emitting unit is connected to one first electrode pad.
- the red light chips of all light-emitting units can be connected to the first second electrode pad, and the green light chips of all light-emitting units can be connected to the second second electrode pad; the blue light chips of all light-emitting units can be connected to the third electrode pad. A second electrode pad. If there are white light chips, the white light chips of all light-emitting units are connected to the fourth second electrode pad. Therefore, when there are three types of light-emitting chips in the two-in-one, the number of pads of the light-emitting module can be reduced to five, which reduces the number of pads of the two-in-one light-emitting module and reduces the packaging difficulty.
- FIG. 3 is a schematic diagram of the circuit connection of a two-in-one light-emitting module.
- the two-in-one light-emitting module includes two light-emitting units 11, the number of pads can be 5, 21a, 21b can be the first electrode pads, and 22a, 22b, 23a can be the second electrode pads , The first electrode pad is connected to the anode, and the second electrode pad is connected to the cathode.
- the number of first electrode pads can always be one; the N common terminals of the N light-emitting units are all connected to the same first electrode pad. Disk; each light-emitting chip is individually connected to a second electrode pad; the number of second electrode pads is n ⁇ N. n represents the number of light-emitting chips included in a light-emitting unit. There are n ⁇ N light-emitting chips in N light-emitting units, and one light-emitting chip is connected to a second electrode pad, so n ⁇ N second electrode pads are required. Therefore, The total number of pads is n ⁇ N+1. In the prior art, one light-emitting unit requires n+1 pads, and N light-emitting units require N(n+1) pads. Therefore, the technical solution provided in this application can reduce the number of pads.
- FIG. 4 is a schematic diagram of the circuit connection of another four-in-one light-emitting module.
- the four-in-one light-emitting module includes four light-emitting units 11, and each light-emitting unit includes three types of RGB light-emitting chips.
- the total number of pads can be 13, 24a can be the first electrode pad, 23d, 22d, 21d, 23c, 22c, 21c, 23b, 22b, 21b, 23a, 22a, 21a may be second electrode pads, the first electrode pad is connected to the anode, and the second electrode pad is connected to the cathode.
- Fig. 5 is a schematic cross-sectional view of an all-in-one light emitting module.
- the all-in-one light emitting module includes: a shading material 511.
- the light-shielding material 511 is wrapped on the side surface of the light-emitting chip 512 and exposes the electrodes of the light-emitting chip 512; the light-shielding material 511 and all the light-emitting chips 512 constitute the light-emitting layer 51 of the light-emitting module.
- the light-shielding material 511 may be black glue, and the light-shielding material 511 wraps the side surface of the light-emitting chip 512 so as to absorb the side light of the light-emitting chip 512 and improve the contrast of the display interface.
- the all-in-one light-emitting module further includes a first circuit layer 52, a through-hole circuit layer 53 and a bonding pad layer 54 sequentially disposed under the light-emitting layer 51.
- the upper layer of the light-emitting layer 51 can be covered with a transparent glue 50 to better transmit light and protect the light-emitting chip 512.
- the light emitting chip 512 may be a flip chip.
- the first circuit layer 52 includes: a first insulating layer 521 and a metal wiring layer 522.
- the first insulating layer 521 is attached to the lower surface of the light-emitting layer 51; the metal wiring layer 522 is embedded in the first insulating layer 521 to connect the electrodes of the light-emitting chip 512.
- the via circuit layer 53 includes: a second insulating layer 531 and a pad lead layer 532.
- the second insulating layer 531 is attached to the lower surface of the first insulating layer 521, and the second insulating layer 531 is provided with a through hole; the pad lead layer 532 is arranged in the through hole and connected to the metal wiring layer 522;
- the pad layer 54 is provided with a first electrode pad and a second electrode pad (collectively referred to as a pad 541), and the first electrode pad and the second electrode pad are connected to the metal wiring layer 522 through the pad lead layer 532.
- electrodes that need to be connected to the same pad 541 can be connected together by circuit wiring. Then, it is connected to the corresponding pad 541 through the pad lead layer 532 in the through hole.
- the first insulating layer 521 and the second insulating layer 531 can prevent a short circuit between lines.
- the pad layer 54 may further include electrode traces (not shown in the figure).
- the electrode trace connects the pad lead layer 532 and the first electrode pad, or connects the pad lead layer 532 and the second electrode pad.
- the light-emitting chip electrodes that need to be connected to the same pad 541 they can be connected to the pad layer 54 through the pad lead layer 532 first, and then establish a conductive connection with the corresponding pad 541 through the electrode traces of the pad layer 54.
- the pad 541 may refer to a first electrode pad or a second electrode pad.
- the pad layer 54 may further include: a third insulating layer 542, which is filled in the periphery of the first electrode pad, the second electrode pad and the electrode trace. Filling insulating materials around the electrode pads and electrode traces can prevent short circuits.
- the first insulating layer 521, the second insulating layer 531, or the third insulating layer 542 may be a black insulating material, so as to absorb back light, prevent light leakage, and improve the contrast of the display interface.
- the lower layer of the pad layer 54 can also be covered with an ink layer 55, which covers the area other than the pad 541, thereby covering the electrode traces of the pad layer 54 to prevent short circuits.
- FIG. 6 is a schematic diagram of the wiring of the first circuit layer 52 of the four-in-one light emitting module provided by an embodiment of the present application.
- the four-in-one light-emitting module has four light-emitting units, and each light-emitting unit includes three types of RGB light-emitting chips 512, for a total of twelve light-emitting chips 512.
- the first circuit layer 52 has four common terminals (11a, 11b, 11c, 11d), four metal traces (13a) for blue light chips, four metal traces (14a, 14b, 14c), and four Metal traces (12a, 12b, 12c) of a red light chip.
- FIG. 7 is a schematic diagram of the through-hole circuit layer 53 of the four-in-one light-emitting module in the embodiment corresponding to FIG. 6.
- the black dots represent the pad leads in the through hole, and the surrounding is insulating material.
- FIG. 8 is a schematic diagram of the pad layer 54 of the four-in-one light emitting module in the embodiment corresponding to FIG. 6.
- the four-in-one light-emitting module contains seven pads (21a, 21b, 21c, 21d, 23a, 24b, 22c), and the electrodes of the four green light chips are routed through electrode wires (34ab ) Connected together to connect to the same pad (24b); the electrodes of the four red light chips are connected together on this layer through electrode traces (32ac and 32bc) to connect to the same pad (22c); four blue chips The electrodes are connected together on the first circuit layer 52 and output from the same pad (23a).
- the four common ends (11a, 11b, 11c, 11d) of the first circuit layer 52 are connected to the four pads (21a, 21b, 21c, 21d) in a one-to-one correspondence.
- FIGS. 6-8 is a schematic diagram of the superposition of the first circuit layer 52, the via circuit layer 53 and the pad layer 54 in FIGS. 6-8.
- the common ends (11a, 11b, 11c, 11d) of the first circuit layer 52 can pass through the pad leads of the via circuit layer 53 and the four pads (21a, 21b, 21c, 21d) Connected, the metal traces (13a) of the four blue chips communicate with the pads (23a) of the pad layer 54 through the pad leads of the via circuit layer 53.
- the metal traces (14a, 14b, 14c) of the four green light chips are connected to the electrode traces (34ab) of the pad layer 54 through the pad leads of the via circuit layer 53, thereby connecting the four green light chips together Output through a pad (24b).
- the metal traces (12a, 12b, 12c) of the four red light chips are connected to the electrode traces (32ac, 32bc) of the pad layer 54 through the pad leads of the through-hole circuit layer 53 and connected to the same pad (22c).
- FIG. 2 For the circuit principle of the four-in-one light-emitting module, refer to FIG. 2.
- FIG. 10 is a schematic diagram of the wiring of the first circuit layer 52 of a four-in-one light-emitting module according to another embodiment of the present application.
- the first circuit layer 52 includes a common terminal (14a), and 12 individual metal traces for light-emitting chips (11a, 12a, 13a; 11b, 12b, 13b; 11c, 12c, 13c; 11d) , 12d, 13d).
- the common terminal can be a common anode or a common cathode.
- a common terminal connects the common poles of all light-emitting units.
- FIG. 11 shows the through-hole circuit layer 53 of the four-in-one light-emitting module in the embodiment corresponding to FIG. 10.
- FIG. 12 is a schematic diagram of the pad layer 54 of the four-in-one light-emitting module in the embodiment corresponding to FIG. 10. There are 13 pads in the pad layer (24a, 21a, 22a, 23a; 21b, 22b, 23b; 21c, 22c) , 23c; 21d, 22d, 23d).
- FIG. 13 is a superimposed schematic diagram of the first circuit layer 52, the via circuit layer 53, and the pad layer 54 in FIGS. 10-12.
- the common terminal (14a) of the first circuit layer 52 is connected to the pad (24a) through the pad lead of the via circuit layer 53.
- the individual metal traces (11a, 12a, 13a; 11b, 12b, 13b; 11c, 12c, 13c; 11d, 12d, 13d) of the 12 light-emitting chips in the first circuit layer 52 pass through the pads of the via circuit layer 53
- One-to-one correspondence is connected to the pads (21a, 22a, 23a; 21b, 22b, 23b; 21c, 22c, 23c; 21d, 22d, 23d).
- FIG. 4 For the circuit principle of the four-in-one light-emitting module, refer to FIG. 4.
- FIG. 14 is a schematic diagram of the wiring of the first circuit layer 52 of a two-in-one light emitting module provided by another embodiment of the present application.
- the two-in-one light-emitting module has two light-emitting units, and each light-emitting unit includes three types of RGB light-emitting chips 512, for a total of six light-emitting chips 512.
- FIG. 16 is a schematic diagram of the pad layer 54 of the two-in-one light-emitting module in the embodiment corresponding to FIG. 15. There are five pads (21a, 23a, 21b, 22b, 22a) in the pad layer 54.
- FIG. 17 is a superimposed schematic diagram of the first circuit layer 52, the via circuit layer 53 and the pad layer 54 in FIGS. 14-16.
- the common ends (11a, 11b) of the first circuit layer 52 can be connected to the two pads (21a, 21b) of the pad layer 54 through the pad leads of the via circuit layer 53, and the two blue light
- the metal traces (13a) of the chip communicate with the pads (23a) of the pad layer 54 through the pad leads of the via circuit layer 53.
- the metal traces (12b) of the two green light chips communicate with the pads (22b) of the pad layer 54 through the pad leads of the via circuit layer 53.
- the metal traces (12a) of the two red light chips communicate with the pads (22a) of the pad layer 54 through the pad leads of the via circuit layer 53. Refer to FIG. 3 for the circuit principle of the two-in-one light-emitting module.
- the present application also provides a display screen, which is formed by splicing a plurality of all-in-one light-emitting modules provided in the foregoing embodiments.
- the display has a small number of pads, which reduces the difficulty of packaging.
- N-in-one LED package assembly comprising: N light-emitting units arranged in an Nx ⁇ Ny matrix, where N ⁇ 3, Nx, Ny are integers and Nx ⁇ Ny, and a package layer is filled with each light-emitting unit In the gap between the cells, the wiring layer is located under the encapsulation layer and connected to each light-emitting unit, so that the LED chips in the multi-point pixel area PX are connected in series and parallel to form an n-in-one pixel area.
- each light-emitting unit may include three LED chips 100, and each LED chip usually includes a first electrode and a second electrode on the same side, such as a horizontal LED chip or a flip-chip LED chip, such as Shown in Figure 20.
- the number of horizontal pixels is Nx
- the number of vertical pixels is Ny, that is, it is arranged in Ny columns and Ny rows.
- N is an integer multiple of a natural number less than 5
- Nx is greater than or equal to 3
- 1 ⁇ Nx / Ny ⁇ 5 the ratio of Nx and Ny is maintained within this range, and the minimum number of pads can be easily achieved through the wiring layer design Package the components and maintain a better aspect ratio, which is convenient for subsequent application end to mount.
- N 2 2 ⁇ k , for example, it can be 4 in 1, 16 in 1 or 64 in one. At this time, the ratio of Nx to Ny is preferably 4:1. LED chips are arranged in this way, and then the wiring layer is matched. The smallest number of pads can be implemented.
- Figures 18-19 disclose a four-in-one LED package assembly, including 4 light-emitting units arranged in a 4 ⁇ 1 matrix, each light-emitting unit includes several LED chips of different wavelengths, preferably, such as at least three The LED chips emit red light (R), green light (G), and blue light (B) respectively. It can also include an LED chip (including a wavelength conversion layer) that emits white light, which forms an RGBW combination, which can improve the brightness of the display. It is very beneficial for outdoor display.
- Each light-emitting unit is equivalent to a pixel area PX, which can also be called a pixel.
- a pixel area PX is a schematic cross-sectional view taken along line AA of FIG. 19.
- Each pixel area PX has a plurality of LED chips 100 spaced apart from each other and having a light emitting surface S21.
- the package assembly further includes a fixed and filled LED chip.
- the multilayer wiring layer includes a first wiring layer 310, a via layer 320, and a second wiring layer 330, and the wiring layers of each layer are electrically isolated through the insulating layer 500.
- the first wiring layer 310 is formed on the lower surface of the plurality of LED chips to connect multiple LED chips in parallel and/or in series.
- the via layer 320 is formed on the first wiring layer and is connected to the The first wiring layer 310 forms an electrical connection; the second wiring layer 330 is formed on the via layer and forms an electrical connection with the via layer 320.
- each of the above-mentioned LED chips 100L1-100L3 has a pair of electrodes 110 on the same side, has a first surface S21 and a second surface S22 opposite to each other, and A side surface S24 connected between the first surface S21 and the second surface S22.
- the first surface S21 is a light-emitting surface S21
- the second surface S22 is provided with the pair of electrodes 110.
- the LED chip includes a substrate 101, a first type semiconductor layer 121, a light emitting layer 122, and a second type semiconductor layer 123.
- the first type semiconductor layer 121 and the second type semiconductor layer 123 may be a p-type semiconductor layer and an n-type semiconductor layer, respectively.
- the electrode group 110 of the LED chip includes a first electrode 111 electrically connected to the first type semiconductor layer 121 and a second electrode 112 electrically connected to the second type semiconductor layer 123.
- the electrode group 110 of each LED chip further includes two thickened layers made of conductive materials. The thickened layers are respectively disposed between the first electrode 111 and the first wiring layer and between the second electrode 112 and the first wiring layer 310, and can be formed by electroplating, electroless plating, or printing. It can be Cu, Cu x W or other conductive metal materials.
- the thickness of the electrode group of each LED chip is 5 to 500 ⁇ m, for example, it can be 30 ⁇ m to 100 ⁇ m, 30 ⁇ m to 50 ⁇ m, or 80 ⁇ m to 120 ⁇ m, depending on specific requirements.
- the LED chip 1100 can be a regular-sized LED chip (generally refers to a chip with a single side size exceeding 200 ⁇ m), a Mini LED chip (generally refers to a chip size between 100 and 200 ⁇ m), or a Micro LED chip (generally refers to a chip The size does not exceed 100 ⁇ m), this embodiment is preferably a Mini LED chip or a micro LED chip.
- the periphery of the plurality of first, second, and third LED chips 100L1 ⁇ L3 is filled with the first packaging layer 200.
- the light transmittance of the packaging layer 200 is less than 30%; more preferably, The light transmittance of the encapsulation layer 200 is 5% to 20%; optionally, the encapsulation layer 200 is opaque and opaque, and specifically includes a light-absorbing component (not shown in the figure), and the light-absorbing component is at least arranged on the sidewall of the LED chip Around or between adjacent LED chips, or further at least around the LED semiconductor light-emitting stack or adjacent semiconductor light-emitting stacks.
- the light-absorbing component can specifically be light-absorbing particles dispersed in epoxy resin or silica gel used in the encapsulation layer, such as black particles, carbon powder, or the light-absorbing component is black resin.
- the light-absorbing component of the encapsulation layer 200 is arranged at least around the LED sidewalls to prevent the side of the LED chip from emitting light, thereby realizing that the light from the LED chip is mainly concentrated on the light-emitting surface or all on the light-emitting surface, reducing the light between different LED chips.
- the encapsulation layer 200 may be epoxy resin or silica gel with black colorant added, so that the entire LED encapsulation assembly is black except for the light-emitting surface S21 of the LED chip 100, which helps to enhance the display panel At the same time, the LED chips 100 are isolated by the black packaging material, which can reduce the optical interference between the LED chips.
- the hardness of the encapsulation layer 200 is preferably D60 or higher, more preferably, D85 or higher.
- a transparent or semi-transparent material layer is formed on the packaging layer 200 as another packaging layer 400 to cover the first surface S21 of the plurality of first, second, and third LED chips, which can prevent the LED chips from being exposed .
- the packaging layer 400 can be used as a light scattering lens to produce a light scattering effect. When the final LED packaging component is applied to a display panel, it can effectively reduce the vertigo.
- the packaging layer 40 shown can include a light scattering material, such as scattering g particles.
- the thickness of the encapsulation layer 400 is preferably between 5-20 ⁇ m, such as 10 ⁇ m.
- the light transmittance is preferably 40% or more.
- the LED packaging component is applied to indoor displays.
- the packaging layer 400 is preferably a semi-transparent layer, and its light transmittance is preferably 40% to 80%, more preferably 70 to 80%, which can reduce The brightness of the LED chip, thereby reducing the dizziness of the light.
- the encapsulation component is applied to an external display.
- the encapsulation layer 400 is preferably a transparent layer, and its light transmittance is preferably above 80%, more preferably 80%.
- the plurality of first, second, and third LED chips 100L1 to L3 may first use the light-emitting surface S21 of the LED chip 100 as the bonding surface, and temporarily adhere to a support such as tape At this time, the electrode surface S24 faces upward, and then the fluid insulating material is filled between the chips and cured as the encapsulation layer 200.
- the first surface S21 of ⁇ L3 is basically on the same horizontal plane, and its height difference is basically kept below 10 ⁇ m, so that when the package component greatly increases the pixel area, it is beneficial to unify the light emitting surface and reduce the influence of light crosstalk between the side walls.
- the first, second, and third PX chips LED-100L1 ⁇ 100-L3 in each pixel area in the package assembly are arranged in a "one" shape, specifically each LED of each light-emitting unit
- the chips are arranged in a row according to the first direction Y, and the first and second electrodes of each LED chip are arranged side by side according to the second direction X, where the first and second directions are basically vertical, which facilitates the wiring arrangement of the application side and reduces the chip size
- Each pixel area is regarded as one pixel, and the dot pitch D1 of each pixel is preferably 1 mm, more preferably, 0.8 mm or less, for example, it may be 0.3 to 0.5, or 0.5 to 0.8.
- the spacing D2 between the chips in the same pixel area PX is preferably 100 ⁇ m or less, for example, 50-100 ⁇ m, or less than 50 ⁇ m.
- the distance between LED chips in the same pixel area is preferably 50 ⁇ m.
- N can be 16, 64 or others.
- the distance D1 between each pixel can be less than 0.3 mm, for example, 0.2 mm, or 0.1 mm.
- a multilayer wiring layer is formed on the second surface of the plurality of LED chips, specifically including a first wiring layer 310, a via layer 320, and a second wiring layer 330, wherein the first wiring layer 310 is connected to the The electrode 110 of the LED chip is connected, the via layer 320 is formed on the first wiring layer 310, and the second wiring layer 330 is formed on the via layer 320 and is electrically connected to the first wiring layer 310 through the via layer 320.
- the multilayer wiring layer preferably uses metal materials with a melting point higher than 400°C, such as Ag, Cu, Ni, Al, etc.
- the materials of each layer can be the same or different, and can be formed by electroplating, electroless plating or printing processes.
- each layer is preferably 100 ⁇ m or less.
- the first wiring layer 310 is formed on the surface of the packaging layer 200, and is electrically connected to the electrodes 110 of the plurality of LED chips.
- the gap between the lines of the first wiring layer 310 is filled with an insulating layer 510, and the surface of the first wiring layer 310 away from the LED chip is exposed.
- the material of the insulating layer 510 may be the same as or different from the material of the encapsulation layer 200. When the same material is used, the insulating layer 510 and the encapsulation layer 200 are combined into one layer, which is difficult to distinguish.
- the LED packaging component is applied to a display device, and the insulating layer 510 and the packaging layer 200 are both epoxy resin or silica gel with colorant added.
- the insulating layer 510 and the encapsulation layer 200 are both epoxy resin or silica gel with colorant added.
- the hardness of the insulating layer 510 is not lower than the hardness of the first wiring layer 310, for example, D60 or more, more preferably, D85 or more, so that it is convenient to expose the first wiring layer 310 by grinding. Surface S310.
- the first wiring layer 310 includes common lines 314a ⁇ d, which will be located in the same column.
- the second electrodes of the first, second and third LED chips are connected in parallel, and further include first lines 311a to 313a, where 311a is connected to the first electrode of the first LED chip 100-L1, and 312a is connected to the second LED
- the first electrode of the chip 100-L2 is connected, and 313a is connected to the first electrode of the third LED chip 100-L3.
- the through hole layer 320 is located on the surface S310 of the first wiring layer 310.
- a series of through holes 321a to 323a, 324a to 324d are formed in an insulating layer 520.
- the number and positions of the through holes correspond to the wiring of the first wiring layer.
- the pattern filled with solid diagonal lines in Fig. 23 is a through hole.
- the material of the insulating layer 520 can refer to the insulating layer 510.
- the thickness of the through hole layer is usually below 100 ⁇ m. In some embodiments, the package component has a thinner structure. At this time, the through hole layer is preferably 20-50 ⁇ m, for example, 25-30 ⁇ m.
- the through-hole layer is too thick, the stress is too large, and the thermal resistance is too large.
- the thickness of the via layer is 50-80 ⁇ m, for example, 60 ⁇ m, so as to appropriately increase the thickness of the package component to facilitate pickup from the sidewall of the device.
- the second wiring layer 330 is located on the through hole layer 320, and is electrically connected to the first wiring layer 310 through the through holes of the through hole layer 320, and includes the wires 331 to 333 and the connecting portions 331a to 333a, 334a to 334d, wherein
- the wire 331 connects the first electrodes of the first LED chip in the same row
- the wire 332 connects the first electrodes of the second LED chip in the same row
- the wire 333 connects the third LED chip in the same row.
- Connect the first electrodes of the series, and the series of connecting parts can be used as electrode pads of the package assembly to connect to the power source.
- a pad can be made in the area corresponding to the connecting portion, and the area outside the pad can be covered with ink, epoxy, or other insulating materials to protect the lines of the second wiring layer.
- the gap between the lines of the third wiring layer 330 is filled with an insulating layer 530, and the surface of the second wiring layer 330 away from the LED chip is exposed.
- the material of the insulating layer 530 can be designed with reference to the insulating layer 510.
- the connecting portion of the second wiring layer 330 completely covers each through hole of the through hole layer 320, which increases the contact area between the second wiring layer and the through hole.
- the through hole layer and The second wiring layer can form conductive materials in the same process, saving a process of forming conductive materials and grinding, which can effectively save costs and improve product stability.
- the insulating layers 510 to 530 can be made of the same material or different materials.
- the specific material can be epoxy resin, silica gel, polyimide, benzocyclobutene or PBO.
- the insulating layers 510-530 are combined into a layer 500, which is difficult to distinguish.
- the insulating layers 510-530 are made of opaque or low-transmittance materials, such as epoxy resin or silica gel doped with black colorants, which can prevent or reduce the light emitted by the LED chip from exiting from the rewiring layer. , Causing crosstalk.
- the metal pattern in the wiring layer can be formed first, then the insulating layer is filled, and finally the surface of the metal circuit in the wiring layer is exposed by grinding.
- the insulating layers 510 to 530 may be partially or entirely transparent materials, so the transmittance is higher than that of the encapsulation layer 200. rate.
- the light-transmitting layer does not need to add colorants or light-absorbing materials, such as carbon powder or dyes. It is preferably a layer of silica gel or epoxy resin, and does not contain micron particles (usually particles with a diameter of 1 micron or more).
- Such as C powder particles can ensure the reliability of the insulation layer covering the wiring layer.
- a photosensitive material is used for curing to form an insulating layer, which can simplify the process.
- the non-metal parts around the chip and the electrode surface cover the light-absorbing material as the encapsulation layer 200 to prevent crosstalk of light on the chip side.
- Figure 25 illustrates the circuit connection of the four-in-one light-emitting unit.
- the LED chips in each PX are arranged in a shape of "one".
- the LED chips of each light-emitting unit are arranged in a row according to the first direction Y, and each LED
- the first and second electrodes of the chip are arranged side by side in the second direction, where the first and second directions are substantially perpendicular, and the wiring layer is connected in parallel from the first direction Y to the first, second and third LED chips in the same column.
- Nx/Ny is 4:1, which has a better length and width ratio, which is convenient for the application side to mount the chip, and from the horizontal (X axis) Direction) paralleling the first electrodes of the same type of LED chips can minimize the number of external pads.
- N can be 16 or 64, etc.
- Nx is 8
- Ny is preferably 2.
- the chip arrangement inside each light-emitting unit can be referred to as shown in FIG. 19.
- the packaging assembly does not have a packaging substrate or a support for carrying the LED chip, and the light-emitting units arranged in the Nx ⁇ Xy matrix are mainly composed of insulating material layers (including 200, 400 and 500) And the wiring layer is fixed and supported.
- the thickness T of the package component mainly depends on the thickness T A of the LED chip and the thickness T C of the wiring layer. In some specific embodiments, mini-type LED chips are used, the chip thickness TA is between 40-150 ⁇ m, the thickness TC of the multilayer wiring layer is between 20-200 ⁇ m, and more preferably the thickness TC of the wiring layer is between 50-150 ⁇ m.
- the T and TA satisfy the relationship: 1.4 ⁇ T/TA ⁇ 10, which can prevent the circuit layer from being too thick, stress, and thermal resistance. While ensuring the strength of the package structure, the total thickness of the package assembly is reduced. thin.
- the thickness TA of the LED chip is about 80 ⁇ m
- the package component may have a thickness of 120 ⁇ m to 500 ⁇ m, such as 120 to 200 ⁇ m.
- the thickness of each wiring layer sublayer may be 20 to 50 ⁇ m, with a ratio of 30 ⁇ m.
- the size of the package component is small (for example, 0.4mm ⁇ 0.4mm or a smaller size), it is not convenient to grab from the upper surface of the package component.
- the thickness T of the package component can be appropriately increased.
- the thickness of the package component can be 320 ⁇ 500 ⁇ m, for example, 340 ⁇ 360 ⁇ m.
- the thickness of the LED chip and/ Or the thickness of the wiring layer to increase the thickness of the package assembly for example, the electrode thickness of the LED chip can be increased, and the thickness of each wiring layer can be appropriately increased.
- the thickness of the via layer is preferably 30 ⁇ 80 ⁇ m, and the thickness of other wiring layers is preferably It is 50 ⁇ 100 ⁇ m.
- a micro-type LED chip is used, the chip thickness TA is between 5-10 ⁇ m, and the thickness TC of the multilayer wiring layer is between 20 and 200 ⁇ m. More preferably, the thickness TC of the wiring layer is between 50 and 150 ⁇ m.
- the T and TA satisfy the relationship: 10 ⁇ T/TA ⁇ 60, for example, the thickness of the package component may be 50-100 ⁇ m, or 100-200 ⁇ m.
- Figures 26-27 are another embodiment of the LED package assembly of the present invention. Please refer to Figures 26 and 27.
- the package assembly includes 8 pixel areas arranged in a 4 ⁇ 2 matrix, which includes four columns of Nx1 ⁇ Nx4 and two rows of light-emitting units from N Y1 to N Y2 .
- the wiring layer routes 314a to 314d Connect the second electrodes of all LED chips in the same column from the first direction.
- 314a connects the second electrodes of all LED chips in the Nx1 column
- the wiring layer routes 331a ⁇ 333a, 331b ⁇ 333b connect the same type in the same row
- the first electrode of the LED chip for example 331, is connected to the first LED chip located at N Y1 .
- the number of pads of the package assembly P Nx+Ny ⁇ 3, that is, 10, which can reach the minimum number of pads.
- the above-mentioned LED package assembly uses the package layer to fix and package the pixel points arranged in a matrix, and design a multilayer wiring layer to connect the LED chips of each pixel in series. Therefore, the above-mentioned LED package assembly does not require wire bonding and precision wiring circuit boards, which improves reliability and contrast.
- the electrode assembly of the LED chip does not need to be soldered to the circuit board with solder paste, which avoids the problem of poor chip soldering, and can improve the integration of the LED and the electronic components, so it can indeed achieve the purpose of the invention.
- Figures 28 and 29 are another embodiment of the LED package assembly of the present invention.
- this embodiment provides an N-in-one package, the package includes: N light-emitting units 1000, N is an integer greater than 1 and less than or equal to 64, and sqrt(N) is an integer greater than 1.
- the number of light emitting units 1000 is equal to sqrt(N); each light emitting unit 1000 includes 1 red light chip 1100, 1 blue light chip 12000 and 1
- the green chip 1300 defines the chip spacing of any two adjacent ones of the same wavelength as X, and the length and width of the package are equal to X*sqrt(N); electrode pads 2000, electrode pads 2000 It is electrically connected to N light-emitting units 1000, and the total number of electrode pads 2000 is within the range of ⁇ 1 after taking an integer value from 2*sqrt (3N) upwards.
- the number of electrode pads 2000 is within the range of sqrt [2*sqrt(3N)] taking an integer value upward to taking an integer value downward, and is at least in the length direction and width direction of the outermost part of the package
- the number of electrode pads 2000 in one direction is equal to sqrt [2*sqrt(3N)], which is an integer value upward
- the electrode pads in the direction where the number of electrode pads 2000 is equal to sqrt [2*sqrt(3N)] is an integer value upward.
- the size of 2000 is equal to the distance between two adjacent electrode pads 2000.
- the length and width of the electrode pad 2000 are both Y, and the length and width of the package are both approximately 2*sqrt [2*sqrt(3N)]*Y; the package body satisfies X ⁇ 0.2*sqrt [2*sqrt(3N)] ⁇ / sqrt(N).
- one light-emitting unit 1000 is one pixel; the three chips with different wavelengths in each light-emitting unit 1000 are arranged in the same order, and the distance between any two adjacent chips of the same wavelength is Point spacing.
- the length and width of the package expressed by the dot pitch X are both equal to X*sqrt(N)
- the length and width of the package are expressed by the size Y of the electrode pad 2000
- the size is similar to 2*sqrt [2*sqrt(3N)]*Y, so we know that X*sqrt(N) ⁇ 2*sqrt [2*sqrt(3N)]*Y, from this formula you can calculate [X*sqrt(N)]/ ⁇ 2*sqrt [ 2*sqrt(3N)] ⁇ ⁇ Y, if you want to ensure the heat dissipation effect of the package, avoid the risk of short circuit and be beneficial to the application of the end patch, the length and width of the electrode pad 2000 must be greater than or equal to 0.1mm, that is, Y ⁇ 0.1mm, according to Y ⁇ [X* sqrt(N)]/ ⁇ 2*sqrt [ 2*sqr
- the total number of electrode pads 2000 and the setting of the number in the outermost single direction (length direction or width direction) of the package can refer to the following table:
- Table 2 The number of electrode pads 2000 in the outermost unidirectional direction of the package body
- the X direction and Y direction in Table 2 respectively correspond to the outermost length direction and width direction or width direction and length direction of the package.
- the number of electrode pads 2000 ranges from an integer value upward to an integer value downward from sqrt [2*sqrt(3N)]
- the number of electrode pads in at least one of the length direction and the width direction of the outermost part of the package is equal to sqrt
- [2*sqrt(3N)] takes an integer value upwards, in either direction of the length direction and the width direction inside the package, the number of electrode pads 2000 is less than or equal to the integer value upwards sqrt [2* sqrt(3N)].
- the distance between two adjacent electrode pads 2000 is greater than or equal to the size of the electrode pad 2000, Therefore, the length and width of the electrode pad 2000 can be guaranteed to be greater than or equal to 0.1 mm.
- the length and width of the electrode pad 2000 are equal, and both are greater than or equal to 0.1 mm.
- the distance between two adjacent electrode pads 2000 is greater than or equal to 0.1 mm.
- the outermost length of the package is equal to sqrt [2*sqrt(3N)] up to an integer value
- the outermost length of the package The distance between the two adjacent electrode pads 2000 on the upper side is equal to the distance between the two adjacent electrode pads 2000 in the outermost width direction of the package.
- the number of electrode pads 2000 in the length direction and the width direction of the outermost package body is equal to sqrt [2*sqrt(3N)] taking an integer value upwards and taking an integer value downwards
- the number of disks 2000 is equal to sqrt [2*sqrt(3N)].
- the distance between two adjacent electrode pads 2000 in the downward integer value direction is greater than the number of electrode pads 2000 is equal to sqrt [2*sqrt(3N)] upwards
- the distance between two adjacent electrode pads 2000 in the integer value direction is equal to sqrt [2*sqrt(3N)]
- the length and width of the package are equal.
- the number of light emitting units 1000 in the length direction of the package is equal to the number of light emitting units 1000 in the width direction of the package.
- the electrode pad 2000 includes a first electrode pad 2100 and a second electrode pad 2200, and each of the chips in each light-emitting unit 1000 is electrically connected to a first electrode pad 2100 and a second electrode pad.
- the chips of different wavelengths are electrically connected to the first electrode pad 2100 and the second electrode pad 2200 of different combinations.
- first electrode pad 2100 and the second electrode pad 2200 have opposite polarities.
- the number of the first electrode pads 2100 is the same as the number of the light emitting units 1000, and the N common ends of the N light emitting units 1000 are electrically connected to the N first electrode pads 2100 in a one-to-one correspondence.
- the package has 12 chips, 7 electrode pads 2000 and their electrical circuits. 4 of them are the first electrode pads 2100, corresponding to the 4 light-emitting units 1000.
- the N-in-one package in this embodiment has the most suitable number of pixels when the dot pitch is constant, which not only ensures the high density required by the small-pitch LED package, but also due to the length and width of the electrode pads.
- the size is greater than or equal to 0.1mm, which effectively solves the problems of poor heat dissipation of small-pitch LEDs, easy short-circuiting, and difficulty in applying end patches, which is of great significance to the market promotion of small-pitch LEDs.
- This embodiment provides a display screen, and the display screen includes a plurality of N-in-one packages described in the first embodiment.
- the ratio of the diagonal size, the length size and the width size of the display screen is 18.36:16:9.
- the present invention provides an N-in-one package.
- the package includes N light-emitting units and electrode pads electrically connected to them.
- Each light-emitting unit includes 1 red light chip and 1 blue light chip. Chip and one green light chip, wherein the distance between any two adjacent chips of the same wavelength X and the number N of the light-emitting units satisfies X ⁇ 0.2*sqrt [ 2*sqrt(3N)] ⁇ / sqrt(N).
- the N-in-one package of the present invention can set the most suitable number N of light-emitting units when the chip spacing X of any two adjacent same wavelengths is constant, so as to ensure
- the length and width dimensions of the electrode pads of the package are both greater than or equal to 0.1mm, which can not only meet the high-density requirements of small-pitch LED packages, but also enable the package to have sufficient heat dissipation capacity to effectively protect the product Reliability, effectively avoid the risk of short circuit, and facilitate the application of the patch.
- the present invention also provides a display screen, which includes a plurality of N-in-one packages of the present invention. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial value.
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Abstract
Description
Claims (31)
- 一种多合一发光模组,其特征在于,包括:N个发光单元;N是大于1的整数;a个第一电极焊盘和b个第二电极焊盘,与所述N个发光单元连接;所述第一电极焊盘与所述第二电极焊盘的极性相反;每个发光单元包括n个发光芯片;n是大于等于3的整数;每个所述发光芯片连接一第一电极焊盘与一第二电极焊盘;不同发光芯片连接不同组合的第一电极焊盘和第二电极焊盘;满足a×b=n×N,a和b为大于等于1的整数。
- 根据权利要求1所述的多合一发光模组,其特征在于,所述第一电极焊盘的数量与所述发光单元的数量相同;所述N个发光单元的N个公共端一一对应连接至N个第一电极焊盘。
- 根据权利要求2所述的多合一发光模组,其特征在于,每个所述发光单元包括红光芯片、绿光芯片和蓝光芯片;所有发光单元的红光芯片连接至第一个所述第二电极焊盘;所有发光单元的绿光芯片连接至第二个所述第二电极焊盘;所有发光单元的蓝光芯片连接至第三个所述第二电极焊盘。
- 根据权利要求3所述的多合一发光模组,其特征在于,每个所述发光单元还包括:白光芯片;所有发光单元的白光芯片连接至第四个所述第二电极焊盘。
- 根据权利要求2所述的多合一发光模组,其特征在于,所述发光单元的数量为四个;所述第一电极焊盘的数量为四个;四个所述发光单元的公共端一一对应连接至四个所述第一电极焊盘。
- 根据权利要求2所述的多合一发光模组,其特征在于,所述发光单元的数量为两个;所述第一电极焊盘的数量为两个;两个所述发光单元的公共端一一对应连接至两个所述第一电极焊盘。
- 根据权利要求1所述的多合一发光模组,其特征在于,所述第一电极焊盘的数量为1个;所述N个发光单元的N个公共端均连接至同一个所述第一电极焊盘;每个发光芯片单独连接一第二电极焊盘;所述第二电极焊盘的数量为n×N个。
- 根据权利要求7所述的多合一发光模组,其特征在于,每个所述发光单元包括红光芯片、绿光芯片和蓝光芯片三种发光芯片;所述第二电极焊盘的数量为3×N个。
- 根据权利要求7所述的多合一发光模组,其特征在于,每个所述发光单元包括红光芯片、绿光芯片、蓝光芯片和白光芯片四种发光芯片;所述第二电极焊盘的数量为4×N个。
- 根据权利要求1所述的多合一发光模组,其特征在于,还包括:遮光材料,包裹于所述发光芯片的侧面且露出所述发光芯片的电极;所述遮光材料与所有发光芯片构成所述发光模组的发光层。
- 根据权利要求10所述的多合一发光模组,其特征在于,还包括:在所述发光层下依次设置的第一电路层、通孔电路层和焊盘层;所述第一电路层包括:第一绝缘层,贴合于所述发光层;金属走线层,镶嵌于所述第一绝缘层内,连接所述发光芯片的电极;所述通孔电路层包括:第二绝缘层,贴合于所述第一绝缘层,所述第二绝缘层开设有通孔;焊盘引线层,设置于所述通孔内,连接所述金属走线层;焊盘层,设有所述第一电极焊盘与所述第二电极焊盘,所述第一电极焊盘和第二电极焊盘通过所述焊盘引线层连接所述金属走线层。
- 根据权利要求11所述的多合一发光模组,其特征在于,所述焊盘层还包括:电极走线,连接焊盘引线层与所述第一电极焊盘,或者,连接所述焊盘引线层与所述第二电极焊盘。
- 根据权利要求12所述的多合一发光模组,其特征在于,所述焊盘层还包括:第三绝缘层,填充于所述第一电极焊盘、所述第二电极焊盘和电极走线的周边。
- 根据权利要求13所述的多合一发光模组,其特征在于,所述第一绝缘层、第二绝缘层或第三绝缘层为黑色绝缘材料。
- 一种显示屏,其特征在于,由多个权利要求1-14任意一项所述的多合一发光模组拼接而成。
- 一种发光二极管封装组件,其特征在于,包含:以Nx×Ny矩阵布置的N个发光单元,其中Nx,Ny为整数且Nx≥Ny,N≥3,每个该发光单元包括a个LED芯片,每一LED芯片包括位于同一侧的第一电极及第二电极;封装层,填充所述LED芯片之间的间隙,并覆盖所述LED芯片的侧壁;布线层,形成于所述多个LED芯片的第二表面之上,将该多个发光单元电连接形成一N合一的发光模块;焊盘,形成于所述布线层之上,其焊盘的数量P=Nx+Ny×a。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:该N个发光单元按照Nx行Ny列布置,使得焊盘的数量P最少。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:Nx>Ny。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:各个发光单元的a个LED芯片按照第一方向Nx排成一列,每个LED芯片的第一、第二电极按照第二方向Ny并排布置。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:其中1≤N x/N y≤5。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:当所述N为2 2 × k时,此时Nx:Ny= 4:1,其中k为自然数。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:当所述N为3 2 × k+1时,此时Nx:Ny= 3:1,其中k为大于或等于零的整数。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:相邻发光单元之间的间距为0.8mm以下。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:第一布线层从第一方向电连接位于同一行的相同类型的LED芯片的第一电极,从第二方向Ny电连接位于同一列的LED芯片的第二电极。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:所述布线层包括第一布线层、通孔层和第二布线层,其中所述第一布线层形成于所述多个LED芯片的第二表面之上,连接所述多个LED芯片的第一电极和第二电极,所述通孔层形成于所述第一布线层之上,与所述第一布线层形成电性连接,所述第二布线层形成于所述通孔层之上,与所述通孔层形成电性连接。
- 根据权利要求25所述的发光二极管封装组件,其特征在于:所述通孔层的厚度为20~80μm。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:所述封装组件的总厚度为100~500μm之间。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:所述封装组件的总厚度介于120~200μm之间或者320~500μm之间。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:所述布线层包含多层彼此电性隔离的导电线路,该导电线路的层数为四层以下。
- 根据权利要求29所述的发光二极管封装组件,其特征在于:该多层导电线路的至少一层的厚度为50μm以下。
- 根据权利要求16所述的发光二极管封装组件,其特征在于:该多层导电线路的至少一层的厚度为60μm以上。
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EP20851720.1A EP4016651A4 (en) | 2019-08-13 | 2020-06-28 | LIGHT EMITTING PACKAGING ASSEMBLY, LIGHT EMITTING MODULE AND DISPLAY SCREEN |
JP2021532394A JP7307798B2 (ja) | 2019-08-13 | 2020-06-28 | 発光パッケージアセンブリ、発光モジュール及びディスプレイパネル |
US17/667,092 US20220157793A1 (en) | 2019-08-13 | 2022-02-08 | Light-emitting device and display screen including the same |
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CN201921553485.1 | 2019-09-18 | ||
CN201921553485.1U CN210403725U (zh) | 2019-09-18 | 2019-09-18 | 发光二极管封装组件 |
CN202010234735.6 | 2020-03-30 | ||
CN202010234735.6A CN113471177B (zh) | 2020-03-30 | 2020-03-30 | 一种n合一封装体及显示屏 |
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