WO2021027330A1 - 一种基于掺杂金属原子的石墨烯谐振式气体传感器的制备工艺 - Google Patents

一种基于掺杂金属原子的石墨烯谐振式气体传感器的制备工艺 Download PDF

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WO2021027330A1
WO2021027330A1 PCT/CN2020/087577 CN2020087577W WO2021027330A1 WO 2021027330 A1 WO2021027330 A1 WO 2021027330A1 CN 2020087577 W CN2020087577 W CN 2020087577W WO 2021027330 A1 WO2021027330 A1 WO 2021027330A1
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graphene
ppa
metal electrode
preparation process
metal
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王权
王江涛
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Jiangsu University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/24—Probes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/01—Indexing codes associated with the measuring variable
    • G01N2291/014—Resonance or resonant frequency
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/021—Gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/025—Change of phase or condition
    • G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors

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  • the invention belongs to the technical field of sensors, and relates to a graphene resonance gas sensor, in particular to a graphene resonance gas sensor based on doped metal atoms and a preparation process thereof.
  • Graphene is a new type of two-dimensional material with unique physical properties, including Young's modulus, tensile strength, thermal conductivity, electron mobility and huge specific surface area. It has broad application prospects in the preparation of gas sensors. Since carbon atoms in the graphene layer are sp 2 hybridized to form bonds, the chemical activity is not high. Traditional gas detection instruments are huge and expensive. The development of NEMS technology has opened up new development space for gas sensors. Traditional resonant gas sensors are all secondary sensitive. By spin-coating a layer of sensitive material on the resonant beam, specific gas molecules are adsorbed on the resonant beam to change the quality of the beam, which in turn causes the natural resonance frequency of the resonant beam to change.
  • the transition metal layer is in surface contact with the graphene resonance beam, and they are adsorbed together by van der Waals force, which causes problems such as poor contact and easy fall off, resulting in poor quality and low sensitivity of the graphene resonance gas sensor. And other issues.
  • the purpose of the present invention is based on the problems of poor quality and low sensitivity of the traditional resonance gas sensor, and proposes a graphene resonance gas sensor based on doped metal atoms and a preparation process thereof.
  • the present invention is realized through a technical solution composed of the following technical measures.
  • the preparation process of a graphene resonance gas sensor based on doped metal atoms includes the following steps:
  • Step 1 Deposit a SiO 2 dielectric layer on the Si substrate by chemical vapor deposition CVD method, and then use absolute ethanol and deionized water to ultrasonically clean the SiO 2 dielectric layer;
  • Step 2 Spin-coating the direct writing adhesive PPA on the surface of the SiO 2 dielectric layer, and etch three rectangular grooves on the PPA using a nano 3D structure direct writing machine; deposit one in the above rectangular grooves by electron beam evaporation EBE technology Layer Ti, and then deposit a layer of Au-Pt alloy material. After the deposition is completed, use the nano 3D structure direct writer to remove the remaining PPA, and the obtained metal block is used as the source metal electrode, the gate metal electrode, and the drain metal electrode in turn ;
  • Step 3 Use a focused ion beam FIB to cut off a part of the gate metal electrode to create a height difference between the gate metal electrode, the source metal electrode and the drain metal electrode;
  • Step 4 Use the mechanical peeling method to prepare a single-layer graphene film.
  • the C atom vacancies should be located in the center of the graphene film with a diameter of 10-20 nm.
  • PPA is spin-coated on the surface of the graphene film, and a circular through hole is etched on the PPA using a nano 3D structure direct writing machine.
  • the through hole is located above the C atom vacancy and deposited in the above circular through hole by EBE
  • the metal material is used as the transition layer metal, and the remaining PPA is removed by the nano 3D structure direct writing machine, and finally the required graphene resonance beam size is cut by FIB, so that the deposited transition layer metal is located in the center of the graphene resonance beam;
  • Step 5 Transfer the graphene resonance beam obtained in step 4 to the top of the source metal electrode and the drain metal electrode by a wet transfer method
  • Step 6 Modify the polymer coating on the transition layer metal of the graphene resonance beam to obtain a graphene resonance gas sensor based on doped metal atoms.
  • step 1 the thickness of the deposited SiO 2 dielectric layer is 100 nm; the ultrasonic power during ultrasonic cleaning is 30 to 45 W, and the cleaning time is 3 to 5 minutes.
  • step 2 the type of PPA is polyphthalaldehyde, the viscosity is: 5cp, the rotation speed of the spin coater during spin coating is: 1000 ⁇ 2000r/min, the spin coating time is: 30s, and the final effect is: the thickness of PPA 1000nm.
  • the depth of the three rectangular grooves is 1000 nm; the length of the grooves on both sides is 1000 nm, and the width is 1000 nm; the length of the middle groove is 1000 nm, and the width is 500 nm; the grooves on both sides are symmetrical about the middle groove
  • step 3 the height at which the gate metal electrode is cut is 400-600 nm.
  • step 4
  • the size of the single-layer graphene film should be greater than or equal to 10um ⁇ 10um;
  • the viscosity of PPA is: 3cp
  • the rotation speed of the spin coater is: 3000 ⁇ 7000r/min
  • the spin coating time is: 30s
  • the final effect is: the thickness of PPA is 100nm;
  • the diameter of the circular through hole is: the distribution range of C atom vacancies
  • the transition layer metal is: Au or Pt material, thickness: 100nm;
  • the length of the graphene resonance beam is 3000 ⁇ 4500 nm, and the width is 500 nm.
  • step 5 the transition layer metal on the graphene resonant beam should be directly above the gate metal electrode and in a suspended state.
  • step 6 the polymer coating is polystyrene.
  • the graphene resonance gas sensor based on doped metal atoms prepared in the present invention is used for gas detection, that is, for detecting acetone.
  • This solution proposes a graphene resonance gas sensor based on doped metal atoms.
  • the graphene film is doped with metal atoms as The anchor point of the transition metal layer can improve the poor quality and low sensitivity of the graphene resonance gas sensor.
  • Figure 1 Schematic diagram of the structure of the SiO 2 dielectric layer deposited on the Si substrate.
  • FIG. 1 Schematic diagram of the structure of spin-coated PPA on the SiO 2 dielectric layer.
  • FIG. 3 is a schematic diagram of the structure of the source metal electrode, the drain metal electrode, and the gate metal electrode.
  • Fig. 4 is a schematic diagram of the cutting structure of the gate metal electrode.
  • Figure 5 Schematic diagram of the structure of C atom vacancies prepared on a graphene film.
  • Figure 6 Schematic diagram of the structure of spin-coated PPA on a graphene film.
  • FIG. 7 Schematic diagram of the structure of the graphene resonance beam.
  • FIG. 8 Schematic diagram of the structure of graphene resonance beam transfer.
  • Fig. 9 is a schematic diagram of the structure of a graphene resonance gas sensor doped with metal atoms.
  • Step 1 Deposit a SiO 2 dielectric layer 2 with a thickness of 100 nm on the Si substrate 1 by a CVD method, as shown in FIG. 1. Then, the SiO 2 medium layer 2 is ultrasonically cleaned with absolute ethanol and deionized water, the ultrasonic power is 30 to 45 W, and the cleaning time is 3 to 5 minutes.
  • Step 2 Spin-coating PPA with a thickness of 1000nm on the surface of the SiO 2 dielectric layer 2.
  • the type of PPA is polyphthalaldehyde, the viscosity of the PPA is: 5cp, the speed of the spin coater is: 1000 ⁇ 2000r/min, the spin coating time For: 30s.
  • Three rectangular grooves are etched on the PPA by using a nano 3D structure direct writer, and the three rectangular grooves are each 1000nm deep; the length of the grooves on both sides is 1000nm and the width is 1000nm; the length of the middle groove is 1000nm , The width is 500nm; the grooves on both sides are symmetrical about the middle groove; the distance between the groove on one side and the adjacent side of the middle groove is 500-1000nm, as shown in Figure 2.
  • a layer of Ti with a thickness of 200nm is deposited in the above-mentioned rectangular groove, and then a layer of Au-Pt alloy with a thickness of 800nm is deposited. After the deposition is completed, it is removed by a nano 3D structure direct writing machine
  • the remaining PPA and the obtained metal blocks are used as the source metal electrode 4, the gate metal electrode 5, and the drain metal electrode 6 in sequence, as shown in FIG. 3.
  • Step 3 Use FIB to cut the height of the gate metal electrode 5 to 600 nm, and the height of the remaining gate metal electrode 5 is: 400 nm, so that there is a gap between the gate metal electrode 5 and the source metal electrode 4 and the drain metal electrode 6 A height difference, as shown in Figure 4.
  • Step 4 Prepare a single-layer graphene film 7 with a size of 10um ⁇ 10um using a mechanical peeling method.
  • the electron beam diameter of the TEM is set to Using TEM, 100 C atom vacancies are gradually prepared in the middle position of the graphene film 7, and the C atom vacancies are located in a region with a diameter of 20 nm, as shown in FIG. 5.
  • PPA with a thickness of 100 nm is spin-coated on the surface of the graphene film 7, the viscosity of the PPA is about 3 cp, the rotation speed of the spin coater is 3000-7000 r/min, and the spin coating time is 30 s.
  • a circular through hole is etched on the PPA using a nano 3D structure direct writer, and the diameter of the circular through hole is 20 nm, as shown in FIG. 6.
  • a layer of Au material is deposited as the transition layer metal 9 in the area of the above-mentioned circular through hole by EBE, and the remaining PPA is removed by a nano 3D structure direct writing machine.
  • the required size of the graphene resonant beam 8 is cut by FIB.
  • the length of the graphene resonant beam 8 is 4500nm and the width is 500nm.
  • the deposited transition layer metal 9 is located in the center of the graphene resonant beam 8, as shown in Figure 7 .
  • Step 5 Transfer the graphene resonant beam 8 to the surface of the source metal electrode 4 and the drain metal electrode 6 by a wet transfer method, so that the transition layer metal 9 on the graphene resonant beam 8 should be located on the gate metal electrode 5 Is directly above and in a suspended state, as shown in Figure 8.
  • Step 6 In order to detect the acetone gas, the transition layer metal 9 is equipped with polystyrene material by deposition method, as shown in Figure 9, and finally the preparation of the graphene resonance gas sensor for detecting acetone gas is completed, as shown in Figure 9. 9 shown.
  • Step 7 According to the method and device for detecting the resonance frequency proposed by patent CN 104076199 B, the change of the resonance frequency of the present invention in the target environment is detected, and the content of acetone gas in the environment is finally obtained.
  • the graphene resonant gas sensor to the LLC circuit to determine the sweep frequency range: 100-400MHz, and then obtain the voltage of the resonant gas sensor at different frequencies within the sweep frequency range 100-400MHz through the voltage acquisition unit, and then The voltage obtained by the voltage acquisition unit is judged by the calculation and judgment unit, and finally the resonance frequency of the resonant gas sensor is determined by the resonance frequency determination unit. Since the resonance frequency of the resonant gas sensor of the present invention changes linearly under standard voltage conditions, the content of acetone gas can be judged by the value of the resonance frequency.
  • the resonant frequency in vacuum is 368.4MHz
  • the resonant frequency in an environment filled with acetone gas is 196.5MHz. If the resonant frequency at this time is detected in the environment as Q, then the content of acetone gas in the environment at this time is:

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Abstract

一种石墨烯谐振式气体传感器及其制备工艺。将金属原子镶嵌进石墨烯谐振梁(8)中，过渡金属层(9)可将掺杂的金属原子作为锚点，紧紧的吸附在石墨烯谐振梁(8)的表面，改善了过渡金属层(9)与石墨烯谐振梁(8)的表面接触质量，有效的解决了传统式谐振式气体传感器质量差和敏感性低等问题。

Description

一种基于掺杂金属原子的石墨烯谐振式气体传感器的制备工艺 技术领域
本发明属于传感器技术领域，涉及一种石墨烯谐振式气体传感器，尤其涉及一种基于掺杂金属原子的石墨烯谐振式气体传感器及其制备工艺。
背景技术
石墨烯是一种新型的二维材料，具有独特的物理特性，包括杨氏模量、拉伸强度、热导率、电子迁移率和巨大的比表面积，在气体传感器制备方面应用前景广泛。由于石墨烯层中碳原子是sp 2杂化成键，故化学活性不高。传统的气体检测仪器体积巨大，价格昂贵，NEMS技术的发展为气体传感器开辟了新的发展空间。传统的谐振式气体传感器都属于二次敏感，通过在谐振梁上面旋涂一层敏感物质，特定的气体分子吸附在谐振梁上从而改变梁的质量，进而导致谐振梁的固有谐振频率发生变化。通常情况下，过渡金属层与石墨烯谐振梁是表面接触的，通过范德华力吸附在一起的，存在接触不好和容易脱落等问题，造成石墨烯谐振式气体传感器也存在质量差和敏感性低等问题。
发明内容
本发明的目的正是基于传统式谐振式气体传感器质量差和敏感性低等问题，提出了一种基于掺杂金属原子的石墨烯谐振式气体传感器及其制备工艺。
本发明是通过以下技术措施构成的技术方案实现的。
本发明提出的一种基于掺杂金属原子的石墨烯谐振式气体传感器的制备工艺，包括以下步骤：
步骤1：在Si基板上通过化学气相沉积法CVD方法沉积一层SiO 2介质层，然后采用无水乙醇和去离子水对SiO 2介质层进行超声清洗；
步骤2：在SiO 2介质层表面旋涂直写胶PPA，采用纳米3D结构直写机在PPA上刻蚀出三个矩形槽；通过电子束蒸镀EBE技术在上述矩形槽内均先沉积一层Ti，再沉积一层Au-Pt合金材料，沉积完成后，利用纳米3D结构直写机去除掉剩余的PPA，得到的金属块依次作为源极金属电极、栅极金属电极、漏极金属电极；
步骤3：采用聚焦离子束FIB切除栅极金属电极的一部分，使栅极金属电极与源极金属电极和漏极金属电极之间产生高度差；
步骤4：采用机械剥离的方法制备单层的石墨烯薄膜，利用透射电子显微镜TEM在石墨烯薄膜内逐步制备出n个C原子空位，C原子空位应位于石墨烯薄膜中心直径为10～20nm的范围内，在石墨烯薄膜表面旋涂PPA，采用纳米3D结构直写机在PPA上刻 蚀出一个圆形的通孔，通孔位于C原子空位上方，通过EBE在上述圆形通孔内沉积金属材料作为过渡层金属，并利用纳米3D结构直写机去除掉剩余的PPA，最后通过FIB切割出所需要的石墨烯谐振梁尺寸，使沉积的过渡层金属位于石墨烯谐振梁的中心位置；
步骤5：通过湿法转移的方法将步骤4得到的石墨烯谐振梁转移到源极金属电极和漏极金属电极的上方；
步骤6：在石墨烯谐振梁的过渡层金属上修饰聚合物涂层，得到基于掺杂金属原子的石墨烯谐振式气体传感器。
步骤1中，沉积的SiO 2介质层厚度为100nm；超声清洗时的超声功率为：30～45W,清洗时间为：3～5分钟。
步骤2中，PPA的类型为聚苯二醛，粘度为：5cp，旋涂时旋涂机的转速为：1000～2000r/min，旋涂时间为：30s，最终达到的效果为：PPA的厚度1000nm。
步骤2中，三个矩形槽，槽的深度均为1000nm；两侧槽的长度均为1000nm，宽度均为1000nm；中间槽的长度为1000nm，宽度为500nm；两侧的槽关于中间的槽对称；一侧的槽与中间槽相邻边的距离为500～1000nm；得到的金属块的高度为：1000nm，其中Ti的厚度为：200nm，Au-Pt合金材料的厚度为：800nm。
步骤3中，栅极金属电极被切除的高度为：400～600nm。
步骤4中，
单层石墨烯薄膜的尺寸应大于等于10um×10um；
TEM的电子束直径需设置为小于等于
Figure PCTCN2020087577-appb-000001
n＝50～100；
PPA的粘度为：3cp，旋涂机的转速为：3000～7000r/min，旋涂时间为：30s，最终达到的效果为：PPA的厚度100nm；
圆形通孔的直径为：C原子空位的分布范围；
过渡层金属为：Au或Pt材料，厚度为：100nm；
石墨烯谐振梁的长度为3000～4500nm，宽度为500nm。
步骤5中，石墨烯谐振梁上的过渡层金属应位于栅极金属电极的正上方，并处于悬置的状态。
步骤6中，聚合物涂层为聚苯乙烯。
将本发明制备的基于掺杂金属原子的石墨烯谐振式气体传感器用于气体的检测的用途，即用于检测丙酮的用途。
本发明的有益效果为：
本方案提出了一种基于掺杂金属原子的石墨烯谐振式气体传感器，相比于直接在石 墨烯谐振梁上面沉积一层过渡金属层和敏感物质，通过在石墨烯薄膜中掺杂金属原子作为过渡金属层的锚点，可改善石墨烯谐振式气体传感器质量差和敏感性低等问题。
附图说明
图1Si基板上沉积SiO 2介质层的结构示意图。
图2SiO 2介质层上旋涂PPA的结构示意图。
图3源极金属电极、漏极金属电极、栅极金属电极制备的结构示意图。
图4栅极金属电极切割的结构示意图。
图5石墨烯薄膜上制备C原子空位的结构示意图。
图6石墨烯薄膜上旋涂PPA的结构示意图。
图7石墨烯谐振梁制备的结构示意图。
图8石墨烯谐振梁转移的结构示意图。
图9掺杂金属原子的石墨烯谐振式气体传感器结构示意图。
图中：1-Si基板；2-SiO 2介质层；3-PPA；4-源极金属电极；5-栅极金属电极；6-漏极金属电极；7-石墨烯薄膜；8-石墨烯谐振梁；9-过渡层金属；10-聚合物涂层。
具体实施方法
下面通过具体实施进一步说明本发明的实质性特点和显著的进步，但本发明决非仅仅限于所述的实施例。
实施例1：
具体实施步骤如下：
步骤1：在Si基板1上通过CVD方法沉积一层厚度为100nm的SiO 2介质层2，如图1所示。然后采用无水乙醇和去离子水对SiO 2介质层2进行超声清洗，超声功率为：30～45W,清洗时间为：3～5分钟。
步骤2：在SiO 2介质层2表面旋涂厚度为1000nm的PPA，PPA的类型为聚苯二醛，PPA的粘度为：5cp，旋涂机的转速为：1000～2000r/min，旋涂时间为：30s。采用纳米3D结构直写机在PPA上刻蚀出三个矩形槽，三个矩形槽，槽的深度均为1000nm；两侧槽的长度均为1000nm，宽度均为1000nm；中间槽的长度为1000nm，宽度为500nm；两侧的槽关于中间的槽对称；一侧的槽与中间槽相邻边的距离为500～1000nm，如图2所示。通过电子束蒸镀EBE技术在上述矩形槽内均先沉积一层厚度为200nm的Ti，再沉积一层厚度为800nm的Au-Pt合金材料，沉积完成后，利用纳米3D结构直写机去除掉剩余的PPA，得到的金属块依次作为源极金属电极4、栅极金属电极5、漏极金属电极6，如图3所示。
步骤3：采用FIB切除栅极金属电极5的高度为600nm，保留的栅极金属电极5的高度为：400nm，使栅极金属电极5与源极金属电极4和漏极金属电极6之间产生一个高度差，如图4所示。
步骤4：采用机械剥离的方法制备出一个单层的石墨烯薄膜7，尺寸为：10um×10um。TEM的电子束直径设置为
Figure PCTCN2020087577-appb-000002
利用TEM在石墨烯薄膜7的中间位置逐步制备出100个C原子空位，C原子空位位于直径为20nm的区域内，如图5所示。在石墨烯薄膜7表面旋涂厚度为100nm的PPA，PPA的粘度为：3cp左右，旋涂机的转速为：3000～7000r/min，旋涂时间为：30s。采用纳米3D结构直写机在PPA上刻蚀出一个圆形的通孔，圆形通孔的直径为：20nm，如图6所示。通过EBE在上述圆形通孔的区域内沉积一层Au材料作为过渡层金属9，并利用纳米3D结构直写机去除掉剩余的PPA。最后通过FIB切割出所需要的石墨烯谐振梁8尺寸，石墨烯谐振梁8的长度为4500nm，宽度为500nm，其中沉积的过渡层金属9位于石墨烯谐振梁8的中心位置，如图7所示。
步骤5：通过湿法转移的方法将石墨烯谐振梁8转移到源极金属电极4和漏极金属电极6的表面，使石墨烯谐振梁8上的过渡层金属9应位于栅极金属电极5的正上方，并处于悬置的状态，如图8所示。
步骤6：为了检测丙酮气体，在过渡层金属9上通过沉积的方法装备聚苯乙烯材料，如图9所示，最终完成了用于检测丙酮气体的石墨烯谐振式气体传感器的制备，如图9所示。
步骤7：根据专利CN 104076199 B提出的一种检测谐振频率的方法及装置，检测本发明在目标环境中谐振频率的变化，最终得到环境中丙酮气体的含量。
首先将石墨烯谐振式气体传感器接入LLC电路中确定扫频范围为：100～400MHz，然后通过电压获取单元获取该谐振式气体传感器在扫频范围100～400MHz内的不同频率下的电压，然后通过计算判断单元对电压获取单元获得的电压进行判断，最后通过谐振频率确定单元确定该谐振式气体传感器的谐振频率。由于本发明的谐振式气体传感器在标准的电压条件下谐振频率是线性变化的，故可通过谐振频率的数值来判断丙酮气体的含量。在真空中谐振频率为368.4MHz，在充满丙酮气体环境下的谐振频率为196.5MHz，若在环境中检测到此时的谐振频率为Q，则此时环境中丙酮气体的含量为：
Figure PCTCN2020087577-appb-000003

Claims (10)

  1. 一种基于掺杂金属原子的石墨烯谐振式气体传感器的制备工艺，其特征在于，包括如下步骤：
    步骤1：在Si基板(1)上通过化学气相沉积CVD方法沉积一层SiO 2介质层(2)，然后采用无水乙醇和去离子水对SiO 2介质层进行超声清洗；
    步骤2：在SiO 2介质层(2)表面旋涂PPA(3)，采用纳米3D结构直写机在PPA(3)上刻蚀出三个矩形槽；通过电子束蒸镀EBE技术在上述矩形槽内均先沉积一层Ti，再沉积一层Au-Pt合金材料，沉积完成后，利用纳米3D结构直写机去除掉剩余的PPA(3)，得到的金属块依次作为源极金属电极(4)、栅极金属电极(5)、漏极金属电极(6)；
    步骤3：采用聚焦离子束FIB切除栅极金属电极(5)的一部分，使栅极金属电极(5)与源极金属电极(4)和漏极金属电极(6)之间产生高度差；
    步骤4：采用机械剥离的方法制备单层的石墨烯薄膜(7)，利用透射电子显微镜TEM在石墨烯薄膜(7)内逐步制备出n个C原子空位，C原子空位应位于石墨烯薄膜(7)中心直径为10～20nm的范围内，在石墨烯薄膜(7)表面旋涂PPA，采用纳米3D结构直写机在PPA上刻蚀出一个圆形的通孔，通孔位于C原子空位上方，通过EBE在上述圆形通孔内沉积金属材料作为过渡层金属(9)，并利用纳米3D结构直写机去除掉剩余的PPA，最后通过FIB切割出所需要的石墨烯谐振梁(8)尺寸，使沉积的过渡层金属(9)位于石墨烯谐振梁(8)的中心位置；
    步骤5：通过湿法转移的方法将步骤4得到的石墨烯谐振梁(8)转移到源极金属电极(4)和漏极金属电极(6)的上方；
    步骤6：在石墨烯谐振梁(8)的过渡层金属(9)上修饰聚合物涂层(10)，得到基于掺杂金属原子的石墨烯谐振式气体传感器。
  2. 根据权利要求1所述的制备工艺，其特征在于，步骤1中，所述沉积的SiO 2介质层(2)厚度为100nm；超声清洗时的超声功率为：30～45W,清洗时间为：3～5分钟。
  3. 根据权利要求1所述的制备工艺，其特征在于，步骤2中，所述PPA(3)的类型为聚苯二醛，粘度为：5cp，旋涂时旋涂机的转速为：1000～2000r/min，旋涂时间为：30s，最终达到的效果为：PPA(3)的厚度1000nm。
  4. 根据权利要求1所述的制备工艺，其特征在于，步骤2中，所述三个矩形槽，槽的深度均为1000nm；两侧槽的长度均为1000nm，宽度均为1000nm；中间槽的长度为1000nm，宽度为500nm；两侧的槽关于中间的槽对称；一侧的槽与中间槽相邻边的距离为500～1000nm；得到的金属块的高度为：1000nm，其中Ti的厚度为：200nm，Au-Pt合金材料的厚度为：800nm。
  5. 根据权利要求1所述的制备工艺，其特征在于，步骤3中，所述栅极金属电极(5)被切除的高度为：400～600nm。
  6. 根据权利要求1所述的制备工艺，其特征在于，步骤4中，
    所述单层石墨烯薄膜(7)的尺寸应大于等于10um×10um；
    TEM的电子束直径需设置为小于等于
    Figure PCTCN2020087577-appb-100001
    n＝50～100；
    PPA的粘度为：3cp，旋涂机的转速为：3000～7000r/min，旋涂时间为：30s，最终达到的效果为：PPA的厚度100nm；
    圆形通孔的直径为：C原子空位的分布范围；
    过渡层金属(9)为：Au或Pt材料，厚度为：100nm；
    石墨烯谐振梁(8)的长度为3000～4500nm，宽度为500nm。
  7. 根据权利要求1所述的制备工艺，其特征在于，步骤5中，所述石墨烯谐振梁(8)上的过渡层金属(9)应位于栅极金属电极(5)的正上方，并处于悬置的状态。
  8. 根据权利要求1所述的制备工艺，其特征在于，步骤6中，所述聚合物涂层(10)为聚苯乙烯。
  9. 将权利要求1～8任一项所述制备方法制备的基于掺杂金属原子的石墨烯谐振式气体传感器用于气体的检测的用途。
  10. 根据权利要求9所述的用途，其特征在于，用于检测丙酮的用途。
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