WO2021018502A1 - Procédé pour étirer un monocristal de silicium à partir d'une masse fondue à l'aide du procédé de czochralski - Google Patents

Procédé pour étirer un monocristal de silicium à partir d'une masse fondue à l'aide du procédé de czochralski Download PDF

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Publication number
WO2021018502A1
WO2021018502A1 PCT/EP2020/068489 EP2020068489W WO2021018502A1 WO 2021018502 A1 WO2021018502 A1 WO 2021018502A1 EP 2020068489 W EP2020068489 W EP 2020068489W WO 2021018502 A1 WO2021018502 A1 WO 2021018502A1
Authority
WO
WIPO (PCT)
Prior art keywords
diameter
single crystal
melt
pulling
monocrystal
Prior art date
Application number
PCT/EP2020/068489
Other languages
German (de)
English (en)
Inventor
Alexander Molchanov
Matiss PLATE
Andreas Sattler
Dirk Zemke
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of WO2021018502A1 publication Critical patent/WO2021018502A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the invention relates to a method for pulling a single crystal of silicon according to the Czochralski method from a melt, comprising
  • a single crystal is pulled from a melt according to the Czochralski method, usually by melting polycrystalline material to a melt in a crucible, dipping a single crystal seed crystal into the melt and pulling it away from the melt.
  • a single crystal is pulled, which is divided into an initial cone, a cylindrical section and a
  • End cone can be divided.
  • the cylindrical section of the single crystal is of particular interest because it is further processed into semiconductor wafers, which in turn are the basic material for the production of electronic components.
  • Diameter of a single crystal during the pulling of a first section of the single crystal to vary the pulling speed, and to pull the single crystal at a predetermined pulling speed during the pulling of a second section.
  • the initial cone to the cylindrical section is comparatively imprecise.
  • Crystallization rate v is in particular through in this phase
  • the method according to WO 2018/069051 A1 provides, when pulling the initial cone, the pulling speed v p and the heating power of the heating source, which is above the
  • the object of the present invention is to effectively limit the mentioned loss of yield by providing a comparatively robust method.
  • the object of the invention is achieved by a method for drawing a
  • Single crystal of silicon according to the Czochralski method from a melt comprising pulling at least one end section of an initial cone and a cylindrical section of the single crystal at a pulling speed that follows a predetermined course and repeatedly performing the following steps a) to c) in the course of regulating the diameter of the end section of the
  • the diameter must be regulated which has as little influence as possible on the quotient v / G. So it can be arranged that the
  • Loss of yield can be avoided. Obviously, it is not sufficient to begin regulating the diameter in the manner described only with the pulling of the cylindrical section of the single crystal. Rather, it must be ensured that this regulation is started before the cylindrical section of the single crystal is pulled. It is particularly preferred to control the
  • a feedback control is set up, with a specified target diameter as the reference variable, the current diameter as the controlled variable and the heating power of the annular
  • Resistance heating as a manipulated variable.
  • the heating power of a main heating source for heating the crucible from the side follows a predetermined profile and is preferably readjusted if necessary in order to relieve the annular resistance heating.
  • the diameter of a first part of the initial cone is regulated up to the end section of the initial cone, preferably with the drawing speed v p as the manipulated variable.
  • images from a camera system are preferably evaluated by means of automatic image processing, which depict the bright ring that is on the melt around the
  • the controller of a control loop according to the invention is designed as a PID controller, preferably as a PD controller.
  • a desired defect distribution of intrinsic point defects preferably comprises a distribution in which such point defects are indeed present in the single crystal, but only in an amount below a concentration at which they are in an agglomerated state.
  • agglomerates in particular in the form of COP defects (crystal originated particles), OSF defects (oxidation induced stacking faults), B-band defects and Lpit defects (large pits) cannot be detected.
  • the intrinsic point defects are preferably distributed in such a way that semiconductor wafers made of silicon obtained from the cylindrical section of the single crystal either only have silicon interstitials or only vacancies
  • the course of the pulling speed v p is preferably specified such that the concentrations of vacancies and silicon interstitials remain below critical concentrations.
  • the critical concentrations can be determined by comparison with the occurrence of larger agglomerates.
  • a silicon single crystal pulled by the method according to the invention preferably has a diameter of at least 300 mm.
  • FIG. 1 shows an apparatus for pulling a single crystal made of silicon according to the CZ method.
  • FIG. 2 shows the course of the deviation in the pulling speed as a function of the position in the single crystal as a result of two jumps in the pulling speed.
  • FIG. 3 shows the change in the concentration of point defects in the single crystal as a result of the cracks shown in FIG. 4 shows the course of the pulling speed as a function of the crystal position when using a method according to the invention and when using a regulation of the diameter of the single crystal that is not according to the invention.
  • 5 shows the course of the deviation of the diameter of a single crystal from a nominal diameter as a function of the position in the single crystal when using the method according to the invention and when using a counter-example not according to the invention.
  • the device according to FIG. 1 comprises a pulling chamber 1, in which a crucible 2 for receiving the melt 3 is accommodated, and a camera system 4 for
  • the crucible 2 is carried by a shaft 6 which can be raised, lowered and rotated.
  • a resistance heater 7 is arranged around the crucible 2, with the aid of which solid silicon is melted to form the melt 3.
  • the growing single crystal 5 is pulled from the melt via a pulling mechanism 8.
  • a heat shield 9 and an annular resistance heater 10, which surround the growing single crystal 5, are arranged above the crucible 2.
  • About the resistance heater 10 can a Shielding (not shown) may be provided which restricts the upward transport of heat.
  • FIG. 2 and FIG. 3 are intended to illustrate how fluctuations in the pulling speed v p can change the concentration C of point defects in the single crystal.
  • FIG. 2 two jumps in the pulling speed Dn r as a function of the axial position P in the single crystal are shown with a continuous curve and a dashed curve.
  • the position Po denotes the beginning of the cylindrical section of the single crystal.
  • FIG. 3 shows the direct effect of the jumps as a significant change in the concentration of point defects AC. It can be seen that after the cracks, a significant amount of crystal length must be drawn before
  • Pull speed v p exist as a manipulated variable up to position Po in the single crystal, with the sequence shown in FIG.
  • Nominal diameter (solid curve) and the diameter according to the example (curve drawn with double dashed lines) and counter-example (curve drawn with single dashed lines) are compared.
  • the diameter d s designates the nominal diameter in the cylindrical section of the single crystal.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé pour étirer un monocristal de silicium à partir d'une masse fondue à l'aide du procédé de Czochralski, ledit procédé consistant à : étirer au moins une section d'extrémité d'une conicité de départ et d'une partie cylindrique du monocristal avec une vitesse d'étirage qui suit une allure prédéfinie et réaliser de manière répétée les étapes suivantes a) à c) tout en régulant le diamètre de la section d'extrémité de la conicité de départ et de la partie cylindrique du monocristal : a) mesure du diamètre actuel du monocristal ; b) détermination de l'écart du diamètre actuel par rapport au diamètre cible du monocristal ; et c) utilisation de la sortie de chaleur d'un dispositif de chauffage à résistance annulaire, qui présente un diamètre qui est supérieur au diamètre actuel du monocristal et qui est disposé de manière concentrique par rapport la conicité de départ au-dessus de la masse fondue, en tant que variable de commande pour réguler le diamètre du monocristal sur le diamètre cible du monocristal.
PCT/EP2020/068489 2019-08-01 2020-07-01 Procédé pour étirer un monocristal de silicium à partir d'une masse fondue à l'aide du procédé de czochralski WO2021018502A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019211609.4A DE102019211609A1 (de) 2019-08-01 2019-08-01 Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode aus einer Schmelze
DE102019211609.4 2019-08-01

Publications (1)

Publication Number Publication Date
WO2021018502A1 true WO2021018502A1 (fr) 2021-02-04

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PCT/EP2020/068489 WO2021018502A1 (fr) 2019-08-01 2020-07-01 Procédé pour étirer un monocristal de silicium à partir d'une masse fondue à l'aide du procédé de czochralski

Country Status (3)

Country Link
DE (1) DE102019211609A1 (fr)
TW (1) TW202106935A (fr)
WO (1) WO2021018502A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000056956A1 (fr) 1999-03-22 2000-09-28 Memc Electronic Materials, Inc. Procede et appareil de regulation du diametre d'un cristal de silicium lors d'un processus de tirage
US20030033972A1 (en) 2001-08-15 2003-02-20 Memc Electronic Materials, Inc. Controlled crown growth process for czochralski single crystal silicon
US20080187736A1 (en) 2007-02-02 2008-08-07 Siltronic Ag Semiconductor wafers of silicon and method for their production
US20110126757A1 (en) 2009-12-02 2011-06-02 Siltronic Ag Method For Pulling A Single Crystal Composed Of Silicon With A Section Having A Diameter That Remains Constant
DE102012204000A1 (de) * 2012-03-14 2013-09-19 Siltronic Ag Ringförmiger Widerstandsheizer und Verfahren zum Zuführen von Wärme zu einem kristallisierenden Einkristall
DE102013210687A1 (de) * 2013-06-07 2014-12-11 Siltronic Ag Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser
WO2018069051A1 (fr) 2016-10-10 2018-04-19 Siltronic Ag Procédé pour tirer un monocristal en matériau semi-conducteur à partir d'une masse fondue qui est contenue dans un creuset

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000056956A1 (fr) 1999-03-22 2000-09-28 Memc Electronic Materials, Inc. Procede et appareil de regulation du diametre d'un cristal de silicium lors d'un processus de tirage
US20030033972A1 (en) 2001-08-15 2003-02-20 Memc Electronic Materials, Inc. Controlled crown growth process for czochralski single crystal silicon
US20080187736A1 (en) 2007-02-02 2008-08-07 Siltronic Ag Semiconductor wafers of silicon and method for their production
US20110126757A1 (en) 2009-12-02 2011-06-02 Siltronic Ag Method For Pulling A Single Crystal Composed Of Silicon With A Section Having A Diameter That Remains Constant
DE102012204000A1 (de) * 2012-03-14 2013-09-19 Siltronic Ag Ringförmiger Widerstandsheizer und Verfahren zum Zuführen von Wärme zu einem kristallisierenden Einkristall
DE102013210687A1 (de) * 2013-06-07 2014-12-11 Siltronic Ag Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser
WO2018069051A1 (fr) 2016-10-10 2018-04-19 Siltronic Ag Procédé pour tirer un monocristal en matériau semi-conducteur à partir d'une masse fondue qui est contenue dans un creuset

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TW202106935A (zh) 2021-02-16
DE102019211609A1 (de) 2021-02-04

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