Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
  • G01N21/9501—Semiconductor wafers
• • G—PHYSICS
  • G06—COMPUTING OR CALCULATING; COUNTING
  • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
  • G06Q10/00—Administration; Management
  • G06Q10/04—Forecasting or optimisation specially adapted for administrative or management purposes, e.g. linear programming or "cutting stock problem"
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
  • G01B11/00—Measuring arrangements characterised by the use of optical techniques
  • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
  • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
  • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
  • G03F7/70605—Workpiece metrology
  • G03F7/70616—Monitoring the printed patterns
  • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• • G—PHYSICS
  • G06—COMPUTING OR CALCULATING; COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N20/00—Machine learning
• • G—PHYSICS
  • G06—COMPUTING OR CALCULATING; COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N3/00—Computing arrangements based on biological models
  • G06N3/02—Neural networks
  • G06N3/04—Architecture, e.g. interconnection topology
• • G—PHYSICS
  • G06—COMPUTING OR CALCULATING; COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N3/00—Computing arrangements based on biological models
  • G06N3/02—Neural networks
  • G06N3/08—Learning methods
• • G—PHYSICS
  • G06—COMPUTING OR CALCULATING; COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N3/00—Computing arrangements based on biological models
  • G06N3/02—Neural networks
  • G06N3/08—Learning methods
  • G06N3/09—Supervised learning
• • G—PHYSICS
  • G06—COMPUTING OR CALCULATING; COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N20/00—Machine learning
  • G06N20/10—Machine learning using kernel methods, e.g. support vector machines [SVM]
• • G—PHYSICS
  • G06—COMPUTING OR CALCULATING; COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N5/00—Computing arrangements using knowledge-based models
  • G06N5/01—Dynamic search techniques; Heuristics; Dynamic trees; Branch-and-bound

Definitions

• sample generally refers to a substrate formed of a semiconductor or non-semiconductor material (e.g., a wafer, or the like).
• a semiconductor or non-semiconductor material may include, but is not limited to, monocrystalline silicon, gallium arsenide, and indium phosphide.
• a sample may include one or more layers.
• such layers may include, but are not limited to, a resist, a dielectric material, a conductive material, and a semiconductive material.
• the overlay metrology subsystem 102 includes one or more detectors 128 configured to capture radiation (e.g., sample radiation 130) emanating from the sample 104 (e.g., an overlay target on the sample 104)through a collection pathway 132 and generate one or more overlay signals indicative of overlay of two or more layers of the sample 104.
• the collection pathway 132 may include multiple optical elements to direct and/or modify illumination collected by the objective lens 124 including, but not limited to one or more lenses 134, one or more filters, one or more polarizers, one or more beam blocks, or one or more beamsplitters.

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• Evolutionary Computation (AREA)
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• General Engineering & Computer Science (AREA)
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• Mathematical Physics (AREA)
• General Health & Medical Sciences (AREA)
• Life Sciences & Earth Sciences (AREA)
• Health & Medical Sciences (AREA)
• Computational Linguistics (AREA)
• Biophysics (AREA)
• Biomedical Technology (AREA)
• Molecular Biology (AREA)
• Computer Vision & Pattern Recognition (AREA)
• Business, Economics & Management (AREA)
• Pathology (AREA)
• Immunology (AREA)
• Biochemistry (AREA)
• Analytical Chemistry (AREA)
• Chemical & Material Sciences (AREA)
• Medical Informatics (AREA)
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• Human Resources & Organizations (AREA)
• Strategic Management (AREA)
• Signal Processing (AREA)
• Game Theory and Decision Science (AREA)
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• Operations Research (AREA)
• Marketing (AREA)
• Entrepreneurship & Innovation (AREA)
• General Business, Economics & Management (AREA)
• Development Economics (AREA)
• Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)

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• 2020
  • 2020-07-02 US US16/919,378 patent/US11340060B2/en active Active
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  • 2020-07-20 WO PCT/US2020/042699 patent/WO2021016144A1/en not_active Ceased
  • 2020-07-20 CN CN202080052179.9A patent/CN114514542B/zh active Active
  • 2020-07-20 KR KR1020227004733A patent/KR102630494B1/ko active Active
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