CN114514542B - 用于重叠计量学系统的自动配方优化 - Google Patents

用于重叠计量学系统的自动配方优化 Download PDF

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CN114514542B
CN114514542B CN202080052179.9A CN202080052179A CN114514542B CN 114514542 B CN114514542 B CN 114514542B CN 202080052179 A CN202080052179 A CN 202080052179A CN 114514542 B CN114514542 B CN 114514542B
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overlay
machine learning
recipe
overlaymetrics
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CN114514542A (zh
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李玮骅
魏石铭
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q10/00—Administration; Management
    • G06Q10/04—Forecasting or optimisation specially adapted for administrative or management purposes, e.g. linear programming or "cutting stock problem"
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
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    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
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    • G06N3/08—Learning methods
    • G06N3/09—Supervised learning
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    • G06N5/00—Computing arrangements using knowledge-based models
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    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G06N20/10—Machine learning using kernel methods, e.g. support vector machines [SVM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
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CN202080052179.9A 2019-07-23 2020-07-20 用于重叠计量学系统的自动配方优化 Active CN114514542B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962877397P 2019-07-23 2019-07-23
US62/877,397 2019-07-23
US16/919,378 2020-07-02
US16/919,378 US11340060B2 (en) 2019-07-23 2020-07-02 Automatic recipe optimization for overlay metrology system
PCT/US2020/042699 WO2021016144A1 (en) 2019-07-23 2020-07-20 Automatic recipe optimization for overlay metrology system

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CN114514542A CN114514542A (zh) 2022-05-17
CN114514542B true CN114514542B (zh) 2023-03-21

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US (1) US11340060B2 (https=)
JP (1) JP7369851B2 (https=)
KR (1) KR102630494B1 (https=)
CN (1) CN114514542B (https=)
TW (1) TWI821585B (https=)
WO (1) WO2021016144A1 (https=)

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US12430401B2 (en) * 2020-09-08 2025-09-30 Wisconsin Alumni Research Foundation System for automatic error estimate correction for a machine learning model
US12250503B2 (en) * 2020-12-24 2025-03-11 Applied Materials Israel Ltd. Prediction of electrical properties of a semiconductor specimen
TW202400966A (zh) * 2022-03-21 2024-01-01 美商艾拉奇公司 用於繞射式覆蓋的外差式光學相位測量裝置
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
KR102546552B1 (ko) 2022-11-14 2023-06-22 (주)오로스테크놀로지 오버레이 계측 장치의 동작을 제어하는 데이터를 저장하기 위한 데이터 구조를 기록한 컴퓨터 판독 가능 저장 매체 및 이를 위한 오버레이 계측 장치
KR102560241B1 (ko) 2022-11-14 2023-07-28 (주)오로스테크놀로지 딥러닝 기반 오버레이 키 센터링 시스템 및 그 방법
US20240210916A1 (en) * 2022-12-22 2024-06-27 Applied Materials, Inc. Machine and deep learning techniques for predicting ecological efficiency in substrate processing
KR102936585B1 (ko) 2023-05-08 2026-03-09 삼성전자주식회사 다중 피크 포커스를 가진 웨이퍼에서의 포커스 최적화 방식
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KR102738956B1 (ko) * 2023-10-31 2024-12-06 (주)오로스 테크놀로지 오버레이 계측 방법 및 오버레이 계측 시스템
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US20210025695A1 (en) 2021-01-28
TW202120888A (zh) 2021-06-01
JP7369851B2 (ja) 2023-10-26
KR20220038707A (ko) 2022-03-29
CN114514542A (zh) 2022-05-17
TWI821585B (zh) 2023-11-11
KR102630494B1 (ko) 2024-01-29
WO2021016144A1 (en) 2021-01-28
JP2022542557A (ja) 2022-10-05
US11340060B2 (en) 2022-05-24

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