WO2021010952A1 - Chambre de traitement au plasma haute densité à grande surface pour écrans d'affichage plats - Google Patents

Chambre de traitement au plasma haute densité à grande surface pour écrans d'affichage plats Download PDF

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Publication number
WO2021010952A1
WO2021010952A1 PCT/US2019/041759 US2019041759W WO2021010952A1 WO 2021010952 A1 WO2021010952 A1 WO 2021010952A1 US 2019041759 W US2019041759 W US 2019041759W WO 2021010952 A1 WO2021010952 A1 WO 2021010952A1
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WIPO (PCT)
Prior art keywords
diffuser
plates
lid plate
orifice
diffuser plates
Prior art date
Application number
PCT/US2019/041759
Other languages
English (en)
Inventor
Suhail Anwar
Jeevan Prakash SEQUEIRA
Yui Lun WU
Jozef Kudela
Carl A. Sorensen
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020227004781A priority Critical patent/KR20220032608A/ko
Priority to JP2022501126A priority patent/JP7346698B2/ja
Priority to PCT/US2019/041759 priority patent/WO2021010952A1/fr
Priority to CN201980098501.9A priority patent/CN114127902A/zh
Publication of WO2021010952A1 publication Critical patent/WO2021010952A1/fr
Priority to JP2023144657A priority patent/JP2024012276A/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Definitions

  • Embodiments of the present disclosure generally relate to process chambers, such as plasma-enhanced chemical vapor deposition (PECVD) chambers. More particularly, embodiments of the present disclosure relate to a lid assembly for process chambers.
  • PECVD plasma-enhanced chemical vapor deposition
  • a precursor gas into a chamber having a substrate disposed on a temperature controlled substrate support.
  • the precursor gas is typically directed through a gas distribution plate situated near the top of the chamber.
  • the precursor gas in the chamber may be energized (e.g., excited) into a plasma by applying a radio frequency (RF) power to a conductive showerhead disposed in the chamber from one or more RF sources coupled to the chamber.
  • RF radio frequency
  • dielectric materials do not have the structural strength to withstand structural loads created by the presence of atmospheric pressure against one side of a large area structural portion of the chamber on the atmospheric side thereof, and to vacuum pressure conditions on the other side thereof, as used in the conventional chambers for these larger substrates. Therefore, inductively coupled plasma systems have been undergoing development for large area substrate plasma processes. However, process uniformity, for example deposition thickness uniformity across the large substrate, is less than desirable.
  • a lid assembly of a chamber for use on large area substrates that is configured to improve film thickness uniformity across the deposition surface of a substrate.
  • Embodiments described herein provide a lid plate of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber.
  • the lid assembly includes a gas distribution assembly comprising a plurality of diffuser plates, a portion of the diffuser plates being separated by a dielectric plate, wherein each of the plurality of diffuser plates include a groove formed in a first surface and one or more orifice holes formed between a surface of the groove and a second surface opposing the first surface.
  • the lid plate includes a gas distribution assembly comprising a plurality of diffuser plates, a portion of the plurality of diffuser plates being separated by a plurality of dielectric plates and a plurality of separator plates, wherein each of the plurality of diffuser plates include a groove formed in a first surface and one or more orifice holes formed between a surface of the groove and a second surface opposing the first surface.
  • the lid plate includes a gas distribution assembly comprising a plurality of diffuser plates, wherein the plurality of diffuser plates comprise a plurality of inner diffuser plates and an outer diffuser plate on opposing sides of the inner diffuser plates, and wherein the plurality of inner diffuser plates are separated by one or more dielectric plates and a plurality of separator plates, and each of the plurality of diffuser plates include a groove formed in a first surface and one or more orifice holes formed between a surface of the groove and a second surface opposing the first surface.
  • Figure 1 is a schematic cross-sectional view of a chamber according to an embodiment.
  • Figure 2 is a schematic cross-sectional view of a plate according to an embodiment.
  • Figure 3A is a schematic perspective view of a plate according to an embodiment.
  • Figure 3B is a negative perspective view of a plate according to an embodiment.
  • Figure 4 is a schematic bottom view of a plate according to an embodiment.
  • Figure 5 is a schematic bottom view of one implementation of the lid plate.
  • Figure 7 is an enlarged sectional view of the lid plate from Figure 6A.
  • Figures 9A-9C are sectional views from Figure 8 showing various configurations of the of the diffuser plate.
  • Figure 10 is a schematic bottom view of another implementation of the lid plate.
  • Embodiments described herein provide a lid assembly of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber.
  • the lid assembly includes a plasma generation system and a gas distribution assembly.
  • the plasma generation system includes a plurality of dielectric plates having a bottom surface oriented with respect to vacuum pressure and a top surface operable to be oriented with respect to atmospheric pressure.
  • One or more coils are positioned on or over the plurality of dielectric plates.
  • the gas distribution assembly includes a first diffuser and a second diffuser.
  • the first diffuser includes a plurality of first channels intersecting a plurality of second channels of the second diffuser.
  • FIG. 1 is a schematic cross-sectional view of a chamber 100, such as a PECVD chamber, that may benefit from embodiments described herein.
  • a chamber 100 such as a PECVD chamber
  • Suitable chambers may be obtained from Applied Materials, Inc. located in Santa Clara, Calif. It is to be understood that the system described below is an exemplary chamber and other chambers, including chambers from other manufacturers, may be used with or modified to accomplish aspects of the present disclosure.
  • the chamber 100 includes a chamber body 104, a lid assembly 106, and a substrate support assembly 108.
  • the lid assembly 106 is disposed at an upper end of the chamber body 104.
  • the substrate support assembly 108 is at least partially disposed within the interior volume of the chamber body 104.
  • the substrate support assembly 108 includes a substrate support 110 and a shaft 112.
  • the substrate support 110 has a support surface 118 for supporting a substrate 102.
  • the substrate 102 is a large area substrate, such as a substrate having a surface area of about 1 square meter or greater.
  • the substrate 102 is not limited to any particular size or shape.
  • the term“substrate” refers to any polygonal, squared, rectangular, curved or otherwise non-circular workpiece, such as a glass or polymer substrate used in the fabrication of flat panel displays, for example.
  • the substrate support 110 typically includes a heating element (not shown).
  • the substrate support 110 is movably disposed within the interior volume of the chamber body 104 by the shaft 112 which extends through the chamber body 104 where the shaft 112 is connected to a substrate support drive system 114.
  • the substrate support drive system 114 moves the substrate support 110 between an elevated processing position (as shown) and a lowered position that facilitates substrate transfer to and from the interior volume of the chamber body 104 through an opening 116 formed though the chamber body 104.
  • the substrate support drive system 114 rotates the shaft 112 and the substrate support 110.
  • the lid assembly 106 includes a lid plate 122 that is disposed at an upper end of the chamber body 104.
  • the lid plate 122 includes a gas distribution assembly 124 and a plasma generation system 126.
  • the gas distribution assembly 124 includes one or more first diffuser inlets 130 of a first diffuser 128 disposed in the lid plate 122.
  • the lid plate 122 includes aluminum-containing materials.
  • the gas distribution assembly 124 includes one or more second diffuser inlets (shown in Figure 3A and Figure 3B) coupled to a second diffuser 136 disposed in the lid plate 122.
  • the first diffuser 128 delivers one or more first gases from the first gas source 134 to a processing region 120 between a bottom surface 160 of the lid plate 122 and the substrate support 110.
  • the one or more first gases are provided to the processing region 120 through a plurality of first holes (shown in Figure 4) of each first channel (shown in Figure 3B) of the first diffuser 128.
  • Flow controllers 141 such as a mass flow control (MFC) devices, are disposed between each of the one or more first diffuser inlets 130 and the first gas source 134 to control flow rates of first gases from the first gas source 134 to each first channel (shown in Figure 3B), and thus provide independent control of first gas flows in the processing region 120.
  • MFC mass flow control
  • the plasma generation system 126 includes one or more cavities 140 disposed in parallel in the lid plate 122.
  • Each of the one or more cavities 140 includes recesses (shown in Figures 2-4) for a plurality of dielectric plates 150.
  • Each of the one or more cavities 140 includes one or more coils 142 positioned on or over the plurality of dielectric plates 150.
  • the plurality of dielectric plates 150 provides a physical barrier having the structural strength to withstand structural loads created the presence of atmospheric pressure in the one or more cavities 140 and the presence of vacuum pressure within the interior volume of the chamber body 104.
  • Each of the plurality of dielectric plates 150 includes a bottom surface 151 and a top surface 153 oriented opposite of the bottom surface 151.
  • the dielectric plates include at least one of aluminum oxide (AI 2 O 3 ), aluminum nitride (AIN), quartz, zirconium dioxide (ZrC>2), zirconium nitride (ZrN), and glass materials.
  • Each coil 142 has an electrical input terminal 144 connected to a power source 152 and an electrical output terminal 146 connected to a ground 154.
  • each coil 142 is connected to the power source 152 through a match box 148 having a match circuit for adjusting electrical characteristics, such as impedance, of the coil 142.
  • Each coil 142 is configured to create an electromagnetic field that energizes at least one of the one of more first gases and second gases into an inductively coupled plasma.
  • the independent connection of each coil 142 of each of the one or more cavities 140 to the respective power source 152 allows for independent control of the power level and frequency provided to each coil 142.
  • the independent control of the power level and frequency provided to each coil 142 allows for the density of the inductively coupled plasma to be independently controlled in the process zones 156a, 156b, 156c, 156d (collectively referred to as process zones 156) corresponding to each coil 142.
  • a controller 158 is coupled to the chamber 100 and configured to control aspects of the chamber 100 during processing.
  • FIG. 2 is a schematic cross-sectional view of the lid plate 122.
  • Figure 2 shows the one or more first diffuser inlets 130 of the first diffuser 128 of the gas distribution assembly 124, and the one or more cavities 140, each coil 142, each electrical input terminal 144, each electrical output terminal 146, and the recesses 201 for the plurality of dielectric plates 150 of the plasma generation system 126.
  • the lid assembly 106 includes a heat exchange system including a plurality of fluid channels (shown in Figure 3B) coupleable to a heat exchanger (not shown).
  • FIG. 3A is a schematic perspective view of the lid plate 122 without the plurality of dielectric plates 150 and each coil 142.
  • Figure 3B is a negative perspective view of the lid plate 122 without the plurality of dielectric plates 150 and coils 142.
  • the lid plate 122 includes a plurality of first channels 302. Each of the first channels 302 are disposed or formed in the lid plate 122. Each first channel of the plurality of first channels 302 is disposed adjacent to one of the recesses 201. Each of the recesses 201 is between two adjacent first channels 302 disposed in the lid plate 122. Each of the first channels 302 is in fluid communication with at least one first diffuser inlet of the one or more first diffuser inlets 130.
  • the lid plate 122 includes a plurality of second channels 304 disposed or formed in the lid plate 122. Each second channel of the plurality of second channels 304 is disposed between two adjacent cavities 140 of the one or more cavities 140. Each of the second channels 304 is in fluid communication with at least second diffuser inlet of the one or more second diffuser inlets 306 formed in the lid plate 122.
  • the lid plate 122 includes a plurality of fluid channels 308 of the heat exchange system coupleable to a heat exchanger (not shown).
  • the heat exchanger such as a chiller, is in fluid communication with the plurality of fluid channels 308 via the fluid inlet 202 and the fluid outlet 204.
  • the plurality of fluid channels 308 are disposed adjacent the one or more cavities 140 and exterior recesses of the recesses 201.
  • each second channel of the plurality of second channels 304 includes a plurality of second holes 404 extending through the lid plate 122.
  • the flow controllers 141 control flow rates of second gases from the second gas source 138 through the plurality of second holes 404.
  • the control of the flow rates of second gases provides independent control of the second gas flows in second zones 408a, 408b, 408c (collectively referred to as second zones 408) of the processing region 120 corresponding to each second channel of the plurality of second channels 304.
  • the lid plate 122 includes a plurality of diffuser plates shown as outer diffuser plates 500 and interior diffuser plates 505. Each of the interior diffuser plates 505 are separated by and/or positioned between the dielectric plates 150 and/or a separator plate 510. Each of the outer diffuser plates 500 have, on one side thereof, dielectric plates 150 and one or more separator plates 510.
  • each of the dielectric plates 150 may be coupled to the lid plate 122 using fasteners (not shown) and or coupled with the separator plates 510 and/or the outer diffuser plates 500 and the interior diffuser plates 505.
  • Each of the outer diffuser plates 500 and the interior diffuser plates 505 include one or more orifice holes 525 (e.g., first holes 402). Each of the one or more orifice holes 525 are in fluid communication with a respective one of the first channels 302 (also shown in Figure 3B).
  • each of the separator plates 510 includes one or more orifice holes 530 (e.g., second holes 404). Each of the one or more orifice holes 530 of the separator plates 510 are in fluid communication with a respective one of the second channels 304 (also shown in Figure 3B).
  • Figures 6A and 6B are sectional views of the lid plate 122 from Figure 5.
  • Figure 6A a portion of the outer diffuser plates 500 and the interior diffuser plates 505 are shown along with portions of the separator plates 510 therebetween.
  • Figure 6B one of the interior diffuser plates 505 is shown along a length direction thereof.
  • FIG 7 is an enlarged sectional view of the lid plate 122 from Figure 6A.
  • One of the interior diffuser plates 505 as well as a portion of two separator plates 510 are shown.
  • the interior diffuser plate 505 includes a groove 700 that is in fluid communication with one of the plurality of first channels 302 as well as the one or more orifice holes 525. While not shown, other of the interior diffuser plates 505 may be configured similarly. Additionally, the outer diffuser plates 500 include the groove 700 as well as one or more orifice holes 525. [0040]
  • the interior diffuser plate 505 is coupled to a body 705 of the lid plate 122 by the fasteners 520.
  • Each fastener 520 is positioned in a respective countersunk bore 710 on opposing sides of the groove 700 and the one or more orifice holes 525.
  • the separator plates 510 are coupled to the body 705 by fasteners 715 (only one is shown).
  • the fasteners 715 are disposed in countersunk bores 720.
  • the fasteners 715 and 520 extend in the respective countersunk bores to a (bottom) surface 725A of the separator plates 510 and a (bottom) surface 725B of the interior diffuser plate 505.
  • the surfaces 725A and 725B are planar or flat such that the surfaces are flush with each other.
  • each of the dielectric plates 150 i.e., the bottom surfaces 151) are also flush with the surface 725B.
  • Figure 8 is a plan view of the backside surface 745 of a diffuser plate 800, which may one of the outer diffuser plates 500 or one of the interior diffuser plates 505.
  • Each fastener 520 is a screw or bolt having a tool interface such as a hex head or a recessed interface that may be used with a screwdriver, hex keys, drivers usable with bits marketed under TORX ® , and the like.
  • the orifice holes 525 are not shown in this view but are formed in the groove 700 at each of a plurality of orifice positions 825.
  • a length 820 indicates where the orifice holes 525 start and end along the groove 700.
  • the length 820 is less than the length 805.
  • the orifice positions 825 are located within the length 820.
  • the orifice positions 825 may be an equal pitch or an unequal pitch along the length 820.
  • a pitch between the orifice positions 825 may be about 0.25 inches to about 1 inch.
  • Figures 9A-9C are sectional views from Figure 8 showing various configurations of the diffuser plate 800.
  • Figures 9A-9C show variations of a profile of the groove 700 and/or the orifice holes 525.
  • a diffuser plate 900A is shown and includes the groove 700 having a semicircular profile.
  • three orifice holes 525 are shown formed between a first surface 905 and a surface 910 of the groove 700.
  • the surface 910 of the groove 700 is a radius or curved surface. While three orifice holes 525 are shown, the number of orifice holes may number from one to five, or more at each of the orifice positions 825 shown in Figure 8.
  • the orifice holes 525 shown in Figure 9A include a central orifice hole 915 and two outer orifice holes 920.
  • a diameter of the central orifice hole 915 and the outer orifice holes 920 may be the same or different.
  • the diameter of one or all of the central orifice hole 915 and the outer orifice holes 920 may be about 0.008 inches to about 0.04 inches. Lengths of the outer orifice holes 920 are the same or substantially equal while a length of the central orifice hole 915 is shorter than that of the outer orifice holes 920.
  • the central orifice hole 915 is provided along an axis 925 that is angled about 90 degrees from a plane of the first surface 905.
  • the outer orifice holes 920 are formed at an acute angle 930 from the axis 925.
  • the acute angle 930 may be about 20 degrees to about 50 degrees from the axis 925, for example about 35 degrees to about 45 degrees, such as about 40 degrees.
  • other orifice holes 525 at other orifice positions 825 along the length 820 may be the same or different than the central orifice hole 915 and outer orifice holes 920 shown in Figure 9A.
  • the surface 910 may be constant along the length 805 ( Figure 8).
  • the surface 910 may be different along the length 805.
  • the groove 700 may be deeper at a central portion of the diffuser plate 800 and shallower at end portions of the diffuser plate 800 along the length 805.
  • Figure 9B shows a diffuser plate 900B that is substantially similar to the diffuser plate 900A shown in Figure 9A with the following exceptions.
  • the groove 700 has a square profile and the outer orifice holes 920 include a flared portion 935.
  • the flared portion 935 connects the outer orifice holes 920 to the surface 910 of the groove 700.
  • the groove 700 includes two sides 940 that extend at an orthogonal angle from the surface 910.
  • Figure 9C shows a diffuser plate 900C that is substantially similar to the diffuser plate 900A shown in Figure 9A with the following exceptions.
  • the diffuser plate 900C includes a single orifice hole 945 at the orifice position 825.
  • the configuration of the diffuser plate 900C may be beneficially utilized as the outer diffuser plates 500 shown in Figure 5.
  • the single orifice hole 945 may be angled at the acute angle 930 to direct gases toward a center of the substrate 102 (shown in Figure 1).
  • FIG 10 is a schematic bottom view of another implementation of the lid plate 122. While the outer diffuser plates 500 and the interior diffuser plate 505 are shown in other Figures as being a single unitary piece, the lid plate 122 shown in Figure 10 includes a plurality of segmented diffuser plates, shown as a first plurality of outer diffuser plates 1000 and a second plurality of interior diffuser plates 1005. The first plurality of outer diffuser plates 1000 and the second plurality of interior diffuser plates 1005 are positioned in rows 1010. Each row 1010 is substantially parallel to other rows 1010. [0053] The first plurality of outer diffuser plates 1000 includes two or more diffuser segments 1015 and the second plurality of interior diffuser plates 1005 includes two or more diffuser segments 1020.
  • Each of the diffuser segments 1015 and the diffuser segments 1020 may be constructed similar to the diffuser plate 800 shown in Figure 8 as well as the diffuser plate 900A-900C shown in Figures 9A-9C except in smaller lengths.
  • the shorter lengths of the outer diffuser plates 1000 and the interior diffuser plates 1005 may minimize effects of thermal expansion and contraction thereof. Additionally, gas flow through each of the diffuser segments 1015 and 1020 may be independently controlled.
  • a lid assembly of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber is provided.
  • the independent control of the power level and frequency provided to each coil allows for the density of the inductively coupled plasma to be independently controlled in the process zones corresponding to each coil.
  • the control of the flow rates of first gases provides independent control of the first gas flows in first zones of the processing region corresponding to each first channel of the plurality of first channels.
  • the control of the flow rates of second gases provides independent control of the second gas flows in second zones of the processing region corresponding to each second channel of the plurality of second channels.
  • Uniform gas flow across the processing region may be desirable in some embodiments. However, in other embodiments, the gas flow across the processing region may not be uniform. The non-uniform gas flow may be desirable due to some physical structure(s) and/or geometry of the chamber.

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Abstract

Des modes de réalisation de la présente invention concernent une plaque de couvercle pour une commande indépendante de la densité de plasma et de la distribution de gaz dans le volume intérieur de la chambre. L'ensemble couvercle comprend un ensemble de distribution de gaz comprenant une pluralité de plaques de diffuseur, une partie des plaques de diffuseur étant séparée par une plaque diélectrique, chacune de la pluralité de plaques de diffuseur comprenant une rainure formée dans une première surface et un ou plusieurs trous d'orifice formés entre une surface de la rainure et une seconde surface opposée à la première surface.
PCT/US2019/041759 2019-07-15 2019-07-15 Chambre de traitement au plasma haute densité à grande surface pour écrans d'affichage plats WO2021010952A1 (fr)

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KR1020227004781A KR20220032608A (ko) 2019-07-15 2019-07-15 평판 디스플레이들을 위한 대면적 고밀도 플라즈마 프로세싱 챔버
JP2022501126A JP7346698B2 (ja) 2019-07-15 2019-07-15 フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ
PCT/US2019/041759 WO2021010952A1 (fr) 2019-07-15 2019-07-15 Chambre de traitement au plasma haute densité à grande surface pour écrans d'affichage plats
CN201980098501.9A CN114127902A (zh) 2019-07-15 2019-07-15 用于平板显示器的大面积高密度等离子体处理腔室
JP2023144657A JP2024012276A (ja) 2019-07-15 2023-09-06 フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ

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