JP7346698B2 - フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ - Google Patents
フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ Download PDFInfo
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- JP7346698B2 JP7346698B2 JP2022501126A JP2022501126A JP7346698B2 JP 7346698 B2 JP7346698 B2 JP 7346698B2 JP 2022501126 A JP2022501126 A JP 2022501126A JP 2022501126 A JP2022501126 A JP 2022501126A JP 7346698 B2 JP7346698 B2 JP 7346698B2
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- 238000009826 distribution Methods 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 14
- 230000001154 acute effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 59
- 239000000758 substrate Substances 0.000 description 41
- 239000012530 fluid Substances 0.000 description 20
- 238000004891 communication Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001595 contractor effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023144657A JP2024012276A (ja) | 2019-07-15 | 2023-09-06 | フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2019/041759 WO2021010952A1 (fr) | 2019-07-15 | 2019-07-15 | Chambre de traitement au plasma haute densité à grande surface pour écrans d'affichage plats |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023144657A Division JP2024012276A (ja) | 2019-07-15 | 2023-09-06 | フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022540470A JP2022540470A (ja) | 2022-09-15 |
JP7346698B2 true JP7346698B2 (ja) | 2023-09-19 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022501126A Active JP7346698B2 (ja) | 2019-07-15 | 2019-07-15 | フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ |
JP2023144657A Pending JP2024012276A (ja) | 2019-07-15 | 2023-09-06 | フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023144657A Pending JP2024012276A (ja) | 2019-07-15 | 2023-09-06 | フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP7346698B2 (fr) |
KR (1) | KR20220032608A (fr) |
CN (1) | CN114127902A (fr) |
WO (1) | WO2021010952A1 (fr) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001028299A (ja) | 1999-05-13 | 2001-01-30 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置 |
JP2001168083A (ja) | 1999-12-07 | 2001-06-22 | Sharp Corp | プラズマプロセス装置 |
JP2001274150A (ja) | 2000-03-24 | 2001-10-05 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ生成導入部材及びスロット電極 |
JP2004304176A (ja) | 2003-03-19 | 2004-10-28 | Tosoh Corp | 微小流路構造体及びそれを用いた気体の処理装置 |
JP2006310794A (ja) | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | プラズマ処理装置と方法 |
JP2006319127A (ja) | 2005-05-12 | 2006-11-24 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2015206076A (ja) | 2014-04-21 | 2015-11-19 | 東京エレクトロン株式会社 | 封止膜の形成方法及び封止膜製造装置 |
JP2019501291A (ja) | 2015-12-18 | 2019-01-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 溝付き中空カソードを有するガスディフューザー |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0823491B1 (fr) * | 1996-08-07 | 2002-02-27 | Concept Systems Design Inc. | Système d'injection de gaz pour réacteurs CVD |
TW579556B (en) * | 2003-03-28 | 2004-03-11 | Au Optronics Corp | Method of fabricating a low temperature polysilicon film |
US6942753B2 (en) * | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
CN1829587A (zh) * | 2003-06-06 | 2006-09-06 | 应用材料公司 | 用于电化学机械抛光的导电抛光物件 |
TWI287279B (en) * | 2004-09-20 | 2007-09-21 | Applied Materials Inc | Diffuser gravity support |
KR20070021637A (ko) * | 2005-08-19 | 2007-02-23 | 세메스 주식회사 | 샤워 헤드 및 샤워 헤드를 포함하는 기판 처리 장치 |
JP4756540B2 (ja) * | 2005-09-30 | 2011-08-24 | 東京エレクトロン株式会社 | プラズマ処理装置と方法 |
CN1843635A (zh) * | 2005-12-16 | 2006-10-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 改善气流均匀性的进气喷嘴 |
JP2008159763A (ja) * | 2006-12-22 | 2008-07-10 | Canon Inc | プラズマ処理装置 |
KR100927375B1 (ko) * | 2007-09-04 | 2009-11-19 | 주식회사 유진테크 | 배기 유닛 및 이를 이용하는 배기 조절 방법, 상기 배기 유닛을 포함하는 기판 처리 장치 |
JP5103223B2 (ja) * | 2008-02-27 | 2012-12-19 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法 |
JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR100918677B1 (ko) * | 2009-04-03 | 2009-09-22 | 홍인표 | 샤워헤드를 채용한 증착장치 |
KR101659303B1 (ko) * | 2009-07-15 | 2016-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | Cvd 챔버의 유동 제어 피쳐 |
TWI385272B (zh) * | 2009-09-25 | 2013-02-11 | Ind Tech Res Inst | 氣體分佈板及其裝置 |
KR101111755B1 (ko) * | 2009-11-26 | 2012-03-13 | 주식회사 케이씨텍 | 가스분사유닛 및 이를 구비하는 유기금속 화학기상증착장치 |
JP2011129954A (ja) * | 2011-03-25 | 2011-06-30 | Masayoshi Murata | プラズマcvd装置及びプラズマcvd装置を用いたシリコン系膜の製造方法 |
CN107301941B (zh) * | 2016-04-14 | 2019-04-23 | 北京北方华创微电子装备有限公司 | 等离子体处理设备及其操作方法 |
-
2019
- 2019-07-15 CN CN201980098501.9A patent/CN114127902A/zh active Pending
- 2019-07-15 KR KR1020227004781A patent/KR20220032608A/ko not_active Application Discontinuation
- 2019-07-15 JP JP2022501126A patent/JP7346698B2/ja active Active
- 2019-07-15 WO PCT/US2019/041759 patent/WO2021010952A1/fr active Application Filing
-
2023
- 2023-09-06 JP JP2023144657A patent/JP2024012276A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001028299A (ja) | 1999-05-13 | 2001-01-30 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置 |
JP2001168083A (ja) | 1999-12-07 | 2001-06-22 | Sharp Corp | プラズマプロセス装置 |
JP2001274150A (ja) | 2000-03-24 | 2001-10-05 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ生成導入部材及びスロット電極 |
JP2004304176A (ja) | 2003-03-19 | 2004-10-28 | Tosoh Corp | 微小流路構造体及びそれを用いた気体の処理装置 |
JP2006310794A (ja) | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | プラズマ処理装置と方法 |
JP2006319127A (ja) | 2005-05-12 | 2006-11-24 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2015206076A (ja) | 2014-04-21 | 2015-11-19 | 東京エレクトロン株式会社 | 封止膜の形成方法及び封止膜製造装置 |
JP2019501291A (ja) | 2015-12-18 | 2019-01-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 溝付き中空カソードを有するガスディフューザー |
Also Published As
Publication number | Publication date |
---|---|
CN114127902A (zh) | 2022-03-01 |
WO2021010952A1 (fr) | 2021-01-21 |
KR20220032608A (ko) | 2022-03-15 |
JP2022540470A (ja) | 2022-09-15 |
JP2024012276A (ja) | 2024-01-30 |
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