WO2021006340A1 - 直流電源装置 - Google Patents
直流電源装置 Download PDFInfo
- Publication number
- WO2021006340A1 WO2021006340A1 PCT/JP2020/027063 JP2020027063W WO2021006340A1 WO 2021006340 A1 WO2021006340 A1 WO 2021006340A1 JP 2020027063 W JP2020027063 W JP 2020027063W WO 2021006340 A1 WO2021006340 A1 WO 2021006340A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- switching element
- current
- series
- voltage
- conduction
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H33/00—High-tension or heavy-current switches with arc-extinguishing or arc-preventing means
- H01H33/02—Details
- H01H33/59—Circuit arrangements not adapted to a particular application of the switch and not otherwise provided for, e.g. for ensuring operation of the switch at a predetermined point in the ac cycle
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Definitions
- the present invention relates to a DC power supply device, and more particularly to a DC power supply device including a current cutoff unit that cuts off a high voltage current at high speed.
- Japanese Patent Application Laid-Open No. 2019-36405 describes a power supply device including a main circuit switch (thyristor or mechanical switch) provided between a power supply and a load, and a capacitor connected in parallel to the main circuit switch. It is disclosed.
- the power supply device is configured so that when an accident current flows through the main circuit switch, a superimposed current flows from the capacitor to the main circuit switch. The superimposed current flows through the main circuit switch in the direction opposite to the accident current. As a result, the accident current is canceled by the superimposed current, so that the main circuit switch can be shut off at high speed.
- the present invention has been made to solve the above problems, and one object of the present invention is to be able to cut off the fault current at high speed while suppressing an increase in conduction loss. At the same time, it is to provide a DC power supply device capable of downsizing the DC power supply device.
- the DC power supply is an electrical connection between a rectifier that converts an AC input voltage supplied from an AC voltage source into a DC voltage, and the rectifier and the load.
- a series switching element having a withstand voltage larger than the rated voltage of the DC voltage and a series switching element are provided, and the current cutoff unit includes a current cutoff unit that cuts off the current and a control unit that controls the rectifier and the current cutoff unit.
- a series circuit having a self-extinguishing conduction switching element that is connected in series to the load side and has a withstand voltage smaller than the rated voltage, and a series circuit that is connected in parallel to the series circuit and has a withstand voltage higher than the rated voltage.
- Each of the series switching element and the conduction switching element includes a self-extinguishing semiconductor switching element, and the conduction loss is smaller than that of the semiconductor switching element, and the control unit turns off the series switching element and the conduction switching element.
- Control to cut off the current cutoff unit is performed by controlling the semiconductor switching element to be turned off after performing the control at the same time, or by controlling the series switching element, the conduction switching element, and the semiconductor switching element to be turned off in this order. It is configured to do.
- the series switching element includes not only a semiconductor element but also a mechanical switch.
- the semiconductor switching element is turned off after the control for turning off the series switching element and the conduction switching element is performed at the same time, or the series switching element,
- the conduction switching element and the semiconductor switching element are turned off in this order.
- the current flowing through the series switching element and the conduction switching element is transferred to the semiconductor switching element, so that the semiconductor switching element can be turned off while all the current is flowing through the semiconductor switching element.
- an arc is not generated in the semiconductor switching element when it is turned off, it is not necessary to pass a superimposed current through the semiconductor switching element by using the charging energy of the capacitor in order to turn off the semiconductor switching element at high speed. Therefore, by controlling as described above, the fault current can be cut off at high speed by the semiconductor switching element without using a capacitor. As a result, the DC power supply device can be miniaturized while cutting off the accident current at high speed.
- the semiconductor switching element can be turned off while no current is flowing through the series switching element and the conduction switching element. it can.
- the rated voltage of the DC power supply is applied to the semiconductor switching element and the series switching element, while the series switching element provided in front of the conduction switching element is in the off state.
- the voltage applied to the conduction switching element becomes almost zero.
- it is possible to suppress that a voltage (rated voltage) higher than the withstand voltage is applied to the conduction switching element, so that it is possible to suppress the conduction switching element from being destroyed.
- each of the series switching element and the conduction switching element Since the withstand voltage of each of the series switching element and the conduction switching element is equal to or higher than the rated voltage, each of the series switching element and the conduction switching element is not destroyed. As a result, it is possible to prevent the element of the current cutoff portion (conduction switching element) from being destroyed.
- the control unit controls to turn off the series switching element and the conduction switching element at the same time, and then controls to turn off the semiconductor switching element, thereby causing the current cutoff unit. It is configured to control to block.
- the control for turning off the series switching element if there is a time difference between the control for turning off the series switching element and the control for turning off the conduction switching element, the control for turning off the semiconductor switching element is delayed by the above time difference, so that the semiconductor switching element is used. The time that the current flows increases.
- the size of the semiconductor switching element depends on the energization time. Therefore, by suppressing the increase in the time for the current to flow through the semiconductor switching element, it is possible to use an element having a relatively short energization time as the semiconductor switching element. As a result, it is possible to prevent the semiconductor switching element from becoming large in size.
- the control unit is controlled to turn off the conduction switching element, so that the current flowing in the series circuit of the series switching element and the conduction switching element is transferred to the semiconductor switching element side.
- the semiconductor switching element is controlled to be turned off, so that the current cutoff unit is cut off.
- the continuity switching element is configured to be able to switch at a higher speed than the series switching element, and the control unit is controlled to turn off the continuity switching element, and then the turn-off time of the series switching element is longer than that.
- the control unit is controlled to turn off the continuity switching element, and then the turn-off time of the series switching element is longer than that.
- the control unit controls the semiconductor switching element to be turned on, and then controls the series switching element and the conduction switching element to be turned on, thereby forming the current cutoff unit. It is configured to control the conduction. With this configuration, it is possible to prevent the series switching element and the conduction switching element from being turned on while the semiconductor switching element is off, so that the conduction switching element has a high voltage (rated of the DC power supply device). It is possible to suppress the application of voltage).
- the control unit controls to turn on the series switching element and the conduction switching element after the output voltage of the current cutoff unit is increased by turning on the semiconductor switching element and the increase of the output voltage is stopped. It is configured to control the conduction of the current cutoff portion.
- the voltage applied to the semiconductor switching element decreases as the output voltage of the current cutoff unit increases. Therefore, by controlling the series switching element and the conduction switching element to be turned on after the increase in the output voltage of the current cutoff unit is stopped, the series switching element and the conduction switching element are switched after the voltage applied to the semiconductor switching element is minimized.
- the element can be turned on.
- a voltage having the same magnitude as the voltage applied to the semiconductor switching element is also applied to the conduction switching element connected in parallel with the semiconductor switching element, so that it is possible to suppress the application of a high voltage to the conduction switching element. it can.
- the current cutoff unit includes a diode element connected in parallel to the series circuit and connected in series with the semiconductor switching element, and the on-voltage of the diode element and the semiconductor switching element.
- the total value with the on-voltage is larger than the total value of the on-voltage of the series switching element and the on-voltage of the conduction switching element.
- the conduction loss of each of the series switching element and the conduction switching element is smaller than the conduction loss of the semiconductor switching element, the on-resistance of each of the series switching element and the conduction switching element is higher than the on-resistance of the semiconductor switching element. Is relatively small. Therefore, by passing a current relatively larger than the current flowing in the series circuit of the diode element and the semiconductor switching element through the series switching element and the conduction switching element having a relatively small on-resistance, the series switching element and the conduction switching element are passed. It is possible to suppress the increase in the calorific value of the diode as much as possible. As a result, it is possible to suppress an increase in the amount of heat generated by the current cutoff unit as a whole.
- a power storage unit for storing the DC power converted by the rectifier is further provided, and the control unit is used in series when the DC power of the power storage unit is supplied to the load.
- the control unit is used in series when the DC power of the power storage unit is supplied to the load.
- the series switching element, the conduction switching element, and the semiconductor switching element include a thyristor, a MOSFET, and an IGBT, respectively.
- the thyristor has a relatively low on-voltage, so by using the thyristor as a series switching element, it is effective to increase the conduction loss during current conduction (normal operation of the DC power supply). Can be suppressed.
- the IGBT switches at a relatively high speed and has a high withstand voltage, the current can be cut off at a high speed by using the IGBT as the semiconductor switching element, and a high voltage (rated voltage) is applied to the semiconductor switching element.
- the MOSFET has a relatively low conduction loss
- the MOSFET switches at a relatively high speed, the current flowing through the DC circuit of the series switching element and the conduction switching element can be commutated to the semiconductor switching element side relatively quickly when the current is cut off. As a result, the time required for the current cutoff unit to cut off the current can be shortened.
- the accident current can be cut off at high speed while suppressing the increase in conduction loss, and the DC power supply device can be miniaturized.
- the DC power supply device 100 includes a rectifier 1, a power storage unit 2, a current sensor 3, a current cutoff unit 4, a control unit 5, a drive unit 6, and a voltage sensor 7. .
- the DC power supply device 100 is used, for example, in a photovoltaic power generation system.
- the rectifier 1 is configured to convert an AC input voltage input from the external system 101 into a DC voltage.
- an AC circuit breaker 102 for switching between conduction and interruption of current between the system 101 and the DC power supply device 100 is provided outside the DC power supply device 100.
- the system 101 is an example of the "AC voltage source" in the claims.
- the power storage unit 2 is configured to store the DC power converted by the rectifier 1.
- the power storage unit 2 supplies power to the load 103 as a power source when power is not supplied from the system 101 (such as during a power failure).
- the current sensor 3 is configured to detect the current value flowing between the rectifier 1 (storage unit 2) and the current cutoff unit 4.
- the current cutoff unit 4 is configured to electrically connect and cut off the rectifier 1 (storage unit 2) and the load 103.
- the current cutoff unit 4 includes a thyristor 40 and a self-extinguishing MOSFET (Metal-Oxide-Semiconductor Field-Effective Transistor) 41 connected in series with the thyristor 40.
- the MOSFET 41 is connected in series with the thyristor 40 on the load 103 side with respect to the thyristor 40.
- the thyristor 40 and the MOSFET 41 are examples of the "series switching element" and the "conduction switching element" in the claims, respectively.
- the current cutoff unit 4 includes a diode element 42 and a self-extinguishing type IGBT (Insulated Gate Bipolar Transistor) 43.
- the IGBT 43 is connected in series with the diode element 42 on the load 103 side with respect to the diode element 42.
- RB Reverse Blocking
- RC Reverse Conducting
- the IGBT 43 is an example of a "semiconductor switching element" in the claims.
- the series circuit of the thyristor 40 and the MOSFET 41 is connected in parallel with the series circuit of the diode element 42 and the IGBT 43.
- the withstand voltage of the thyristor 40 (for example, 1600V) is larger than the rated voltage (for example, 750V) of the DC voltage used in the DC power supply device 100. Further, the withstand voltage of the MOSFET 41 (for example, 10 to 20 V) is smaller than the rated voltage. Further, the withstand voltage of the IGBT 43 (for example, 1600V) is larger than the rated voltage.
- each of the thyristor 40 and the MOSFET 41 is smaller than the conduction loss of the IGBT 43 (when a current having the same magnitude as that of the thyristor 40 and the MOSFET 41 is flowing). Further, each of the MOSFET 41 and the IGBT 43 is configured to be switchable at a higher speed than the thyristor 40. The MOSFET 41 is configured to be switchable at a higher speed than the IGBT 43.
- the current cutoff unit 4 cuts off the current with a relatively small amount of elements (thyristor 40, MOSFET 41, diode element 42, and IGBT 43).
- elements thyristor 40, MOSFET 41, diode element 42, and IGBT 43.
- a relatively large number of elements such as a resistor element, a reactor, a thyristor, and a diode are required in addition to the switch and the capacitor. Is. Therefore, since the current cutoff unit 4 is composed of a relatively small amount of elements, it is possible to suppress an increase in the failure rate of the current cutoff unit 4 (suppress a decrease in reliability).
- control unit 5 is configured to control the rectifier 1 and the current cutoff unit 4. Specifically, the control unit 5 controls the operation of the rectifier 1 by transmitting a gate signal to a switching element (not shown) provided in the rectifier 1. Further, the control unit 5 is configured to transmit a command signal for controlling the current cutoff unit 4 to the drive unit 6.
- the drive unit 6 is configured to transmit a gate signal for turning on or off the thyristor 40, the MOSFET 41, and the IGBT 43 of the current cutoff unit 4 based on the command signal from the control unit 5.
- the voltage sensor 7 is configured to detect the output voltage of the current cutoff unit 4 (voltage between the current cutoff unit 4 and the load 103).
- the IGBT 43 is turned on (turned on) by transmitting a gate signal to the IGBT 43. Then, as shown in FIG. 3, the current from the rectifier 1 (broken line in FIG. 3) during the period I (see FIG. 2) from the transmission of the gate signal to the IGBT 43 to the transmission of the gate signal to the MOSFET 41 and the thyristor 40. (See) flows to the load 103 side through the diode element 42 and the IGBT 43. As shown in FIGS. 2D and 2F, when the IGBT 43 is turned on, the output current value of the current cutoff unit 4 (see FIG. 2D) and the current value flowing through the IGBT 43 (FIG. 2). Each of 2 (see (f)) has increased to a predetermined size.
- control unit 5 controls to turn on the IGBT 43 and then turns on the thyristor 40 and the MOSFET 41 to cut off the current. It is configured to control the conduction of the unit 4.
- the output voltage of the current cutoff unit 4 increases when the IGBT 43 is turned on.
- the control unit 5 is configured to control the current cutoff unit 4 to be conductive by controlling the thyristor 40 and the MOSFET 41 to be turned on after the increase in the output voltage of the current cutoff unit 4 is stopped. Has been done.
- the control unit 5 when the voltage value detected by the voltage sensor 7 rises to a predetermined maximum voltage, a signal is transmitted from the voltage sensor 7 to the control unit 5.
- the control unit 5 receives the above signal from the voltage sensor 7, the control unit 5 gives a command signal to the drive unit 6 to transmit a gate signal for turning on the thyristor 40 and the MOSFET 41. As a result, the period B of FIG. 2 is started.
- the thyristor 40 and the MOSFET 41 are turned on by transmitting the gate signal to the thyristor 40 and the MOSFET 41. Then, as shown in FIG. 4, during the period B (see FIG. 2), the current from the rectifier 1 (see the broken line in FIG. 4) includes the series circuit of the diode element 42 and the IGBT 43 and the series circuit of the thyristor 40 and the MOSFET 41. Branches to and flows to the load 103 side.
- the current value flowing through the thyristor 40 is increased to a predetermined magnitude. Since the current flowing only on the series circuit side of the diode element 42 and the IGBT 43 in the period I also flows on the series circuit side of the thyristor 40 and the MOSFET 41 in the period B, the current value flowing in the IGBT 43 in the period B is in the period I. It decreases below the current value.
- the ON voltage (forward voltage) V F and IGBT43 on-voltage of the diode element 42 - the sum of the (collector-emitter saturation voltage) Vce is ON voltage (forward voltage) of the thyristor 40 Vth and MOSFET41 of on-state voltage - greater than the total value of the (drain-source voltage) V DS. More specifically, a relationship that (V F + Vce) >> ( Vth + V DS). The ratio of the current value flowing in the series circuit of the thyristor 40 and the MOSFET 41 to the current value flowing in the series circuit of the diode element 42 and the IGBT 43 is determined by the on-voltage of the above four elements.
- the current value flowing in the series circuit of the thyristor 40 and the MOSFET 41 becomes larger than the current value flowing in the series circuit of the diode element 42 and the IGBT 43.
- the current value flowing in the series circuit of the thyristor 40 and the MOSFET 41 is, for example, about 20 times the current value flowing in the series circuit of the diode element 42 and the IGBT 43.
- a relatively small current flows through the diode element 42 and the IGBT 43, so that the amount of heat generated by the diode element 42 and the IGBT 43 can be made relatively small.
- an element having a low drain-source resistance as the MOSFET 41, it is possible to reduce the amount of heat generated by the MOSFET 41. Thereby, it is possible to reduce the calorific value other than the thyristor 40.
- a radiator (not shown) for dissipating heat from the current cutoff unit 4 is designed in consideration of only the heat generation amount of the thyristor 40 (without considering the heat generation amount of the MOSFET 41, the IGBT 43, and the diode element 42). This makes it possible to reduce the size of the radiator.
- the control unit 5 controls to turn off (turn off) the thyristor 40 and the MOSFET 41 at the same time, and then controls to turn off the IGBT 43. It is configured. Specifically, a gate signal for turning off the thyristor 40 and the MOSFET 41 is simultaneously transmitted to the thyristor 40 and the MOSFET 41. As a result, period C is started. After that, a gate signal for turning off the IGBT 43 is transmitted to the IGBT 43, and the period C ends.
- the current value flowing through the thyristor 40 in the period C is smaller than the current value flowing through the thyristor 40 in the period B (see (e) in FIG. 2). doing.
- the current value flowing through the IGBT 43 in the period C is larger than the current value flowing through the IGBT 43 in the period B (see (f) in FIG. 2).
- the current flowing through the thyristor 40 and the MOSFET 41 during the period B is caused by the current not flowing through the series circuit of the thyristor 40 and the MOSFET 41 when the MOSFET 41 is turned off. This is due to the commutation to the IGBT 43 side in the period C. Since the IGBT 43 is energized when the MOSFET 41 is turned off, a high voltage (rated voltage) is not applied to the MOSFET 41.
- the thyristor 40 has a characteristic that it continues to be in the on state if a current (holding current) is flowing even if the gate is turned off, but when the MOSFET 41 is turned off, the current flowing through the thyristor 40 is commutated to the IGBT 43 side. As a result, the current flowing through the thyristor 40 becomes zero and the thyristor 40 is turned off. Thereby, for example, the thyristor 40 can be turned off without providing a circuit for forcibly turning off the thyristor 40 by passing a canceling current through the thyristor 40.
- control unit 5 is controlled to turn off the MOSFET 41, so that the current flowing in the series circuit of the thyristor 40 and the MOSFET 41 is transferred to the IGBT 43 side, so that the current does not flow in the thyristor 40. Later, by controlling to turn off the IGBT 43, the current cutoff unit 4 is controlled to be cut off. Specifically, the control unit 5 is configured to control to turn off the IGBT 43 after the current value flowing through the thyristor 40 becomes zero.
- the control unit 5 cuts off the current by controlling to turn off the IGBT 43 after a time t equal to or longer than the turn-off time of the thyristor 40 after the control to turn off the MOSFET 41 is performed. It is configured to control to shut off the unit 4. Specifically, the gate-off signal is transmitted to the IGBT 43 time t after the gate-off signal is transmitted to each of the MOSFET 41 and the thyristor 40.
- the turn-off time of the thyristor 40 is, for example, 0, 5 to 1 ms
- the time t is preferably set to about 1 to 2 ms, which is about twice the turn-off time of the thyristor 40.
- the control unit 5 is configured to perform control to conduct and cut off the current flowing from the power storage unit 2 by the current cutoff unit 4.
- the control method for conducting and cutting off the current from the power storage unit 2 is the same as the above method (see FIG. 2) for conducting and cutting off the current from the rectifier 1, so detailed description thereof will be omitted.
- the current flowing through the current cutoff unit 4 is cut off by turning off the IGBT 43, which is a semiconductor switching element, an arc is not generated unlike the case where the current is cut off only by the mechanical switch. Therefore, it is possible to cut off the current at high speed without separately providing a configuration for forcibly extinguishing the arc.
- the current cutoff unit 4 is connected in series to the thyristor 40 having a withstand voltage larger than the rated voltage of the DC voltage and the thyristor 40 on the load 103 side, and has a withstand voltage higher than the rated voltage.
- a series circuit having a small self-extinguishing MOSFET 41 and a self-extinguishing IGBT 43 connected in parallel to the series circuit and having a withstand voltage larger than the rated voltage are included. Further, each of the thyristor 40 and the MOSFET 41 has a smaller conduction loss than the IGBT 43. Then, the DC power supply device 100 is configured so that the control unit 5 controls to turn off the thyristor 40 and the MOSFET 41 at the same time and then turns off the IGBT 43.
- the current flowing through the thyristor 40 and the MOSFET 41 is transferred to the IGBT 43, so that the IGBT 43 can be turned off while all the current is flowing through the IGBT 43.
- an arc is not generated in the IGBT 43 when it is off, it is not necessary to pass a superimposed current through the IGBT 43 using the charging energy of the capacitor in order to turn the IGBT 43 into the off state at high speed. Therefore, by controlling as described above, the fault current can be cut off at high speed by the IGBT 43 without using a capacitor.
- the DC power supply device 100 can be miniaturized while interrupting the accident current at high speed.
- the series circuit of the thyristor 40 and the MOSFET 41 having a relatively small conduction loss as compared with the IGBT 43 is connected in parallel with the IGBT 43, the series having a relatively small conduction loss unlike the case where only the IGBT 43 is provided. At least a part of the current can be passed to the circuit side. As a result, conduction loss (power consumption) can be suppressed as compared with the case where only the IGBT 43 is provided. As a result, the accident current can be cut off at high speed while suppressing the increase in conduction loss, and the DC power supply device 100 can be miniaturized.
- the IGBT 43 can be turned off while no current is flowing through the thyristor 40 and the MOSFET 41.
- the rated voltage of the DC power supply device 100 is applied to the IGBT 43 and the thyristor 40, while the voltage applied to the MOSFET 41 becomes substantially zero because the thyristor 40 provided in front of the MOSFET 41 is in the off state. ..
- each of the thyristor 40 and the MOSFET 41 Since the withstand voltage of each of the thyristor 40 and the MOSFET 41 is equal to or higher than the rated voltage, each of the thyristor 40 and the MOSFET 41 is not destroyed. As a result, it is possible to prevent the element of the current cutoff unit 4 (MOSFET 41) from being destroyed.
- the control for turning off the IGBT 43 is delayed by the above time difference, so that the time for the current to flow through the IGBT 43 increases.
- the control for turning off the thyristor 40 and the MOSFET 41 it is possible to suppress the delay in the control for turning off the IGBT 43 and the increase in the time for the current to flow through the IGBT 43.
- the size of the IGBT 43 depends on the energization time. Therefore, it is possible to suppress the increase in size of the IGBT 43 by suppressing the increase in the time for the current to flow through the IGBT 43.
- the control unit 5 is controlled to turn off the MOSFET 41, so that the current flowing in the series circuit of the thyristor 40 and the MOSFET 41 is transferred to the IGBT 43 side, thereby causing the thyristor 40.
- the DC power supply device 100 is configured so as to control to cut off the current cutoff unit 4 by controlling to turn off the IGBT 43 after the current stops flowing. This makes it possible to prevent the IGBT 43 from being turned off while the current is still flowing in the series circuit of the thyristor 40 and the MOSFET 41. As a result, when the IGBT 43 is turned off, the thyristor 40 can be reliably turned off. As a result, it is possible to more reliably suppress the application of a high voltage (rated voltage) to the MOSFET 41.
- the control unit 5 controls to turn off the IGBT 43 after a time t equal to or longer than the turn-off time of the thyristor 40 after the control to turn off the MOSFET 41 is performed.
- the DC power supply device 100 is configured to control the shutoff unit 4. As a result, the control for turning off the IGBT 43 can be performed even more reliably after the current stops flowing through the thyristor 40.
- the control unit 5 controls to turn on the thyristor 40 and the MOSFET 41 after controlling to turn on the IGBT 43, thereby controlling the current cutoff unit 4 to be conductive.
- the DC power supply device 100 is configured. As a result, it is possible to suppress the thyristor 40 and the MOSFET 41 from being turned on while the IGBT 43 is turned off, so that it is possible to suppress the application of a high voltage (rated voltage of the DC power supply device 100) to the MOSFET 41. Can be done.
- the control unit 5 sets the thyristor 40 and the MOSFET 41 after the output voltage of the current cutoff unit 4 increases and the increase of the output voltage stops when the IGBT 43 is turned on.
- the current cutoff unit 4 is controlled to be conductive.
- the voltage applied to the IGBT 43 decreases as the output voltage of the current cutoff unit 4 increases. Therefore, by controlling the thyristor 40 and the MOSFET 41 to be turned on after the increase in the output voltage of the current cutoff unit 4 is stopped, the thyristor 40 and the MOSFET 41 can be turned on after the voltage applied to the IGBT 43 is minimized.
- the MOSFET 41 connected in parallel to the IGBT 43 is also subjected to a voltage having the same magnitude as the voltage applied to the IGBT 43, so that it is possible to suppress the application of a high voltage to the MOSFET 41.
- the sum of the ON voltage Vce ON diode element 42 voltage V F and the IGBT43 is than the sum of the ON voltage V DS of the ON voltage Vth and MOSFET41 thyristor 40
- the DC power supply device 100 is configured so as to be large. As a result, the current flowing in the series circuit of the diode element 42 and the IGBT 43 having a relatively large total on-voltage value can be made relatively small. As a result, the calorific value of the diode element 42 and the IGBT 43 can be made relatively small.
- the conduction loss of each of the thyristor 40 and the MOSFET 41 is smaller than the conduction loss of the IGBT 43, the on-resistance of each of the thyristor 40 and the MOSFET 41 is relatively small as compared with the on-resistance of the IGBT 43. Therefore, by passing a current relatively larger than the current flowing in the series circuit of the diode element 42 and the IGBT 43 through the thyristor 40 and the MOSFET 41 having a relatively small on-resistance, it is possible to increase the heat generation amount of the thyristor 40 and the MOSFET 41 as much as possible. It can be suppressed. As a result, it is possible to suppress an increase in the amount of heat generated by the current cutoff unit 4 as a whole.
- the control unit 5 when the DC power of the power storage unit 2 is supplied to the load 103, the control unit 5 simultaneously controls to turn off the thyristor 40 and the MOSFET 41, and then turns off the IGBT 43.
- the DC power supply device 100 is configured so as to perform control. As a result, it is possible to suppress the element of the current cutoff unit 4 from being destroyed while suppressing the increase in the conduction loss when the current is conducted.
- the DC power supply device 100 is configured so that the element of the current cutoff unit 4 includes the thyristor 40, the MOSFET 41, and the IGBT 43.
- the thyristor has a relatively low on-voltage, by using the thyristor 40 as the thyristor 40, it is possible to effectively suppress an increase in conduction loss during current conduction (normal operation of the DC power supply device 100). Can be done.
- the IGBT switches at a relatively high speed and has a high withstand voltage
- the IGBT 43 since the IGBT 43 switches at a relatively high speed and has a high withstand voltage, by using the IGBT 43 as the IGBT 43, the current can be cut off at a high speed, and the IGBT 43 can be used even when a high voltage (rated voltage) is applied to the IGBT 43. It can be suppressed from being destroyed.
- the MOSFET has a relatively low conduction loss, by using the MOSFET 41 as the MOSFET 41, it is possible to more effectively suppress the increase in the conduction loss during the current conduction (normal operation of the DC power supply device).
- the MOSFET switches at a relatively high speed, the current flowing through the DC circuits of the thyristor 40 and the MOSFET 41 can be commutated to the IGBT 43 side relatively quickly when the current is cut off. As a result, the time required for the current cutoff unit 4 to cut off the current can be shortened.
- the control for turning off the IGBT 43 is performed after the control for turning off the thyristor 40 (series switching element) and the MOSFET 41 (conduction switching element) is performed at the same time.
- the present invention is not limited to this.
- the control unit 5 may control to cut off the current cutoff unit 4 by controlling the thyristor 40, the MOSFET 41, and the IGBT 43 to turn off in this order. Even when the load 103 is supplied with the electric power of the power storage unit 2, the thyristor 40, the MOSFET 41, and the IGBT 43 may be turned off in this order.
- a mechanical switch may be provided instead of the thyristor 40.
- the current flowing through the mechanical switch can be easily reduced to zero by commutating the current by turning off the MOSFET 41, so that an arc is generated in the mechanical switch when the mechanical switch is turned off. It is possible to suppress. As a result, even when a mechanical switch is used, it is possible to suppress a long time required for cutting off the current.
- a bipolar transistor may be provided instead of the thyristor 40. It is possible to further reduce the power consumption when a mechanical switch is used instead of the thyristor 40.
- control unit 5 shows an example in which the control unit 5 controls to turn on the thyristor 40 (series switching element) and the MOSFET 41 (conduction switching element) after the increase in the output voltage of the current cutoff unit 4 is stopped.
- the present invention is not limited to this.
- the control unit 5 may control to turn on the thyristor 40 and the MOSFET 41 when the output voltage becomes larger than a predetermined threshold value even while the output voltage is increasing.
- MOSFET 41 is provided as the conduction switching element, but the present invention is not limited to this.
- a mechanical switch may be provided instead of the MOSFET 41.
- the IGBT 43 is provided as a switching element, but the present invention is not limited to this.
- SiC-MOSFET may be provided instead of the IGBT 43.
- Rectifier 1 Rectifier 2 Power storage unit 4 Current cutoff unit 5 Control unit 40 Thyristor (switching element for series) 41 MOSFET (Conduction switching element) 42 Diode element 43 IGBT (Semiconductor switching element) 100 DC power supply 101 system (AC voltage source) 103 Load t time (predetermined time) Vce on-voltage (on-voltage of semiconductor switching element) V DS on-voltage (on-voltage of conduction switching element) V F ON voltage (ON voltage of the diode element) Vth on-voltage (switching element on-voltage)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
- Rectifiers (AREA)
Abstract
Description
図1~図6を参照して、本実施形態による直流電源装置100の構成について説明する。
図1に示すように、直流電源装置100は、整流器1と、蓄電部2と、電流センサ3と、電流遮断部4と、制御部5と、駆動部6と、電圧センサ7と、を備える。直流電源装置100は、たとえば太陽光発電システムに用いられる。
次に、図2~図6を参照して、直流電源装置100の動作について説明する。
本実施形態では、以下のような効果を得ることができる。
なお、今回開示された実施形態は、すべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は、上記した実施形態の説明ではなく請求の範囲によって示され、さらに請求の範囲と均等の意味および範囲内でのすべての変更(変形例)が含まれる。
2 蓄電部
4 電流遮断部
5 制御部
40 サイリスタ(直列用スイッチング素子)
41 MOSFET(導通切り替え素子)
42 ダイオード素子
43 IGBT(半導体スイッチング素子)
100 直流電源装置
101 系統(交流電圧源)
103 負荷
t 時間(所定時間)
Vce オン電圧(半導体スイッチング素子のオン電圧)
VDS オン電圧(導通切り替え素子のオン電圧)
VF オン電圧(ダイオード素子のオン電圧)
Vth オン電圧(スイッチング素子のオン電圧)
Claims (9)
- 交流電圧源から供給される交流入力電圧を直流電圧に変換する整流器と、
前記整流器と負荷との間の電気的な接続および遮断を行う電流遮断部と、
前記整流器および前記電流遮断部の制御を行う制御部と、を備え、
前記電流遮断部は、
前記直流電圧の定格電圧よりも耐圧が大きい直列用スイッチング素子と、前記直列用スイッチング素子に対して前記負荷側に直列に接続され、前記定格電圧よりも耐圧が小さい自己消弧式の導通切り替え素子とを有する直列回路と、
前記直列回路に対して並列に接続され、前記定格電圧よりも耐圧が大きい自己消弧式の半導体スイッチング素子と、を含み、
前記直列用スイッチング素子および前記導通切り替え素子の各々は、前記半導体スイッチング素子よりも導通損失が小さく、
前記制御部は、前記直列用スイッチング素子および前記導通切り替え素子をオフする制御を同時に行った後に前記半導体スイッチング素子をオフする制御を行うか、または、前記直列用スイッチング素子、前記導通切り替え素子、前記半導体スイッチング素子の順でオフする制御を行うことにより、前記電流遮断部を遮断する制御を行うように構成されている、直流電源装置。 - 前記制御部は、前記直列用スイッチング素子および前記導通切り替え素子をオフする制御を同時に行った後に、前記半導体スイッチング素子をオフする制御を行うことにより、前記電流遮断部を遮断する制御を行うように構成されている、請求項1に記載の直流電源装置。
- 前記制御部は、前記導通切り替え素子をオフする制御が行われることにより、前記直列用スイッチング素子および前記導通切り替え素子の前記直列回路に流れる電流が前記半導体スイッチング素子側に転流されることによって前記直列用スイッチング素子に電流が流れなくなった後に、前記半導体スイッチング素子をオフする制御を行うことにより、前記電流遮断部を遮断する制御を行うように構成されている、請求項1または2に記載の直流電源装置。
- 前記導通切り替え素子は、前記直列用スイッチング素子よりも高速にスイッチング可能に構成されており、
前記制御部は、前記導通切り替え素子をオフする制御が行われてから、前記直列用スイッチング素子のターンオフ時間以上の所定時間後に、前記半導体スイッチング素子をオフする制御を行うことにより、前記電流遮断部を遮断する制御を行うように構成されている、請求項3に記載の直流電源装置。 - 前記制御部は、前記半導体スイッチング素子をオンする制御を行った後に、前記直列用スイッチング素子および前記導通切り替え素子をオンする制御を行うことにより、前記電流遮断部を導通させる制御を行うように構成されている、請求項1~4のいずれか1項に記載の直流電源装置。
- 前記制御部は、前記半導体スイッチング素子がオンされることにより前記電流遮断部の出力電圧が増加するとともに前記出力電圧の増加が停止した後に、前記直列用スイッチング素子および前記導通切り替え素子をオンする制御を行うことにより、前記電流遮断部を導通させる制御を行うように構成されている、請求項5に記載の直流電源装置。
- 前記電流遮断部は、前記直列回路に並列に接続され、前記半導体スイッチング素子と直列に接続されるダイオード素子を含み、
前記ダイオード素子のオン電圧と前記半導体スイッチング素子のオン電圧との合計値は、前記直列用スイッチング素子のオン電圧と前記導通切り替え素子のオン電圧との合計値よりも大きい、請求項1~6のいずれか1項に記載の直流電源装置。 - 前記整流器により変換された直流電力を蓄積する蓄電部をさらに備え、
前記制御部は、前記蓄電部の直流電力が前記負荷に供給されている場合に、前記直列用スイッチング素子および前記導通切り替え素子をオフする制御を同時に行った後に前記半導体スイッチング素子をオフする制御を行うか、または、前記直列用スイッチング素子、前記導通切り替え素子、前記半導体スイッチング素子の順でオフする制御を行うことにより、前記蓄電部から前記負荷に流れる電流を前記電流遮断部により遮断する制御を行うように構成されている、請求項1~7のいずれか1項に記載の直流電源装置。 - 前記直列用スイッチング素子、前記導通切り替え素子、および、前記半導体スイッチング素子は、それぞれ、サイリスタ、MOSFET、および、IGBTを含む、請求項1~8のいずれか1項に記載の直流電源装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021530739A JP7226551B2 (ja) | 2019-07-10 | 2020-07-10 | 直流電源装置 |
CN202080007763.2A CN113261188A (zh) | 2019-07-10 | 2020-07-10 | 直流电源装置 |
KR1020217019930A KR102609928B1 (ko) | 2019-07-10 | 2020-07-10 | 직류 전원 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019128219 | 2019-07-10 | ||
JP2019-128219 | 2019-07-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021006340A1 true WO2021006340A1 (ja) | 2021-01-14 |
Family
ID=74114539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2020/027063 WO2021006340A1 (ja) | 2019-07-10 | 2020-07-10 | 直流電源装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7226551B2 (ja) |
KR (1) | KR102609928B1 (ja) |
CN (1) | CN113261188A (ja) |
WO (1) | WO2021006340A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016199497A1 (ja) * | 2015-06-11 | 2016-12-15 | 富士電機株式会社 | 電力変換装置 |
CN109950866A (zh) * | 2017-12-20 | 2019-06-28 | 富士电机株式会社 | 电流切断器 |
JP2020014045A (ja) * | 2018-07-13 | 2020-01-23 | 富士電機株式会社 | 双方向スイッチ回路 |
JP2020024830A (ja) * | 2018-08-06 | 2020-02-13 | 富士電機株式会社 | スイッチ装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6953885B2 (ja) | 2017-08-10 | 2021-10-27 | 富士電機株式会社 | 電源装置および遮断スイッチ回路 |
-
2020
- 2020-07-10 KR KR1020217019930A patent/KR102609928B1/ko active IP Right Grant
- 2020-07-10 WO PCT/JP2020/027063 patent/WO2021006340A1/ja active Application Filing
- 2020-07-10 CN CN202080007763.2A patent/CN113261188A/zh active Pending
- 2020-07-10 JP JP2021530739A patent/JP7226551B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016199497A1 (ja) * | 2015-06-11 | 2016-12-15 | 富士電機株式会社 | 電力変換装置 |
CN109950866A (zh) * | 2017-12-20 | 2019-06-28 | 富士电机株式会社 | 电流切断器 |
JP2020014045A (ja) * | 2018-07-13 | 2020-01-23 | 富士電機株式会社 | 双方向スイッチ回路 |
JP2020024830A (ja) * | 2018-08-06 | 2020-02-13 | 富士電機株式会社 | スイッチ装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7226551B2 (ja) | 2023-02-21 |
KR20210092826A (ko) | 2021-07-26 |
KR102609928B1 (ko) | 2023-12-04 |
CN113261188A (zh) | 2021-08-13 |
JPWO2021006340A1 (ja) | 2021-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7115127B2 (ja) | スイッチ装置 | |
EP2819142B1 (en) | Solid state circuit-breaker switch devices | |
US20030183838A1 (en) | Solid-state DC circuit breaker | |
JPH11297170A (ja) | 直流消弧方法及び装置 | |
US20190229625A1 (en) | Power conversion device | |
JP2006311682A (ja) | 充放電制御装置 | |
JP7200528B2 (ja) | 電流遮断器 | |
KR101821439B1 (ko) | 한류기 | |
WO2019149814A1 (en) | Switching apparatus | |
JP7183421B2 (ja) | 直流分電盤 | |
JP2020014045A (ja) | 双方向スイッチ回路 | |
JP2014216056A (ja) | 直流回路遮断装置 | |
WO2021006340A1 (ja) | 直流電源装置 | |
JP5585514B2 (ja) | 負荷駆動装置 | |
JP4247771B2 (ja) | 電気回路 | |
JP2015230849A (ja) | 開閉器 | |
JP2010041863A (ja) | 交直変換回路 | |
JP6700578B2 (ja) | 無停電電源装置 | |
JP7165317B1 (ja) | 直流電流開閉装置 | |
JP2019153976A (ja) | 直流遮断器 | |
JP6919486B2 (ja) | 直流遮断装置 | |
JP7250266B1 (ja) | 直流電流遮断装置 | |
JP7312727B2 (ja) | 直流遮断装置 | |
JP7473786B2 (ja) | サージ吸収回路、及び限流回路 | |
KR102206800B1 (ko) | 버스 타이 스위치 및 버스 타이 스위치 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20836405 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2021530739 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20217019930 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20836405 Country of ref document: EP Kind code of ref document: A1 |