WO2021003886A1 - 驱动控制电路和家电设备 - Google Patents

驱动控制电路和家电设备 Download PDF

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Publication number
WO2021003886A1
WO2021003886A1 PCT/CN2019/112953 CN2019112953W WO2021003886A1 WO 2021003886 A1 WO2021003886 A1 WO 2021003886A1 CN 2019112953 W CN2019112953 W CN 2019112953W WO 2021003886 A1 WO2021003886 A1 WO 2021003886A1
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WIPO (PCT)
Prior art keywords
signal
switch tube
comparison module
terminal
drive control
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PCT/CN2019/112953
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English (en)
French (fr)
Inventor
文先仕
黄招彬
曾贤杰
张杰楠
Original Assignee
广东美的制冷设备有限公司
美的集团股份有限公司
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Application filed by 广东美的制冷设备有限公司, 美的集团股份有限公司 filed Critical 广东美的制冷设备有限公司
Priority to JP2022500613A priority Critical patent/JP7322274B2/ja
Publication of WO2021003886A1 publication Critical patent/WO2021003886A1/zh

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H02M1/4225—Arrangements for improving power factor of AC input using a non-isolated boost converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H02M1/4233—Arrangements for improving power factor of AC input using a bridge converter comprising active switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
    • H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
    • H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
    • H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M5/4585—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • This application relates to the field of drive control, and in particular to a drive control circuit and a household appliance.
  • rectifiers In the current inverter air conditioner market, in order to improve the energy efficiency of load operation, rectifiers, inductors, PFC (Power Factor Correction) modules, electrolytic capacitors and inverters are usually used to form the drive control circuit of the motor (load).
  • PFC Power Factor Correction
  • a totem pole PFC module is used to replace the BOOST PFC and rectifier.
  • a totem pole PFC module is usually set At least one half-bridge circuit in the group maintains high frequency operation.
  • an inductor L a totem pole PFC (Power Factor Correction, power factor correction) module, an electrolytic capacitor E, and an inverter form a drive control circuit for the motor (load).
  • the drive control The circuit has at least the following technical defects during operation:
  • the switching tubes are High-frequency operation, which may cause a large number of higher harmonics in the drive control circuit.
  • This application aims to solve at least one of the technical problems existing in the prior art or related technologies.
  • one purpose of this application is to provide a drive control circuit.
  • Another purpose of this application is to propose a household appliance.
  • a drive control circuit including: a half-bridge circuit, the half-bridge circuit is connected to the bus circuit, and the half-bridge circuit is configured to perform processing on the power supply signal
  • the half-bridge circuit specifically includes: a switch tube configured to have a control terminal; a sampling resistor connected in series to a low-voltage bus in the bus circuit; a first comparison module;
  • the first input terminal of the comparison module is configured to connect to the bus reference signal, and the first input terminal of the first comparison module is connected to the first terminal of the sampling resistor, and the first input terminal of the first comparison module is The two input terminals are configured to be connected to the second terminal of the sampling resistor, wherein the output terminal of the first comparison module is connected to the control terminal of the switch tube, and the voltage division value of the sampling resistor is greater than the Bus reference signal, the first comparison module outputs a cut-off signal to the switch tube.
  • the parasitic capacitance will cause two switches under the amplification of the switching tube.
  • Voltage interference between tubes for example, at the moment when the second switching tube (denoted as the lower switching tube) starts to turn on, the parasitic capacitance of the lower switching tube generates a spike voltage, which impacts the first switching tube in the form of a spike current. It may cause the first switch tube (denoted as the upper switch tube) to be broken down, and then cause the half-bridge circuit to malfunction.
  • the half-bridge circuit is directly connected, and the voltage division value of the sampling resistor is greater than the bus reference signal, and the first comparison module outputs the comparison result That is, the cut-off signal does not need to go through the driver to trigger the switch to cut off, which can further reduce the possibility of the half-bridge circuit being through.
  • it further includes: a Hall sensor configured to sample the electrical signal flowing through the half-bridge circuit to obtain a corresponding sampling signal; second comparison Module, the first input terminal of the second comparison module is configured to access the reference signal, the second input terminal of the second comparison module is configured to access the sampling signal, wherein the first The output terminals of the two comparison modules are connected to the control terminal of the switch tube, the absolute value of the sampling signal is greater than the reference signal, and the second comparison module outputs a cut-off signal to the switch tube.
  • the Hall sensor and the second comparison module are arranged in the half-bridge circuit to protect the switch tube from over-current and over-voltage, which can not only reduce the parasitic capacitance and power supply signal to the half-bridge circuit Impact, and can reduce the power consumption of the half-bridge circuit.
  • the cost of the drive control circuit is also reduced, thereby improving the reliability and stability of the drive control circuit.
  • the output terminal of the second comparison module is connected to the control terminal of the switch tube, the absolute value of the sampling signal is greater than the reference signal, and the second comparison module outputs a cut-off signal to the switch tube, especially It is in over-current protection or over-voltage protection, without the driver to trigger the switch tube to cut off, which can further reduce the possibility of the switch tube being burned or broken down.
  • the electrical signal flowing through the half-bridge circuit is sampled by setting the Hall sensor, and the sampling result is transmitted to the driver, and the switching frequency is adjusted according to the detection result.
  • the current carrying in the power supply signal is detected to be relatively low.
  • the switching frequency can be reduced to reduce electromagnetic interference signals and spike signals.
  • the sampling frequency range of the Hall sensor is 1KHz ⁇ 1000MHz, and the sampling signal is also used for the closed control of the current loop.
  • the conduction voltage of the switch tube is greater than zero
  • the second comparison module further includes: a first comparator, and the positive input terminal of the first comparator is connected to the first comparator.
  • Reference signal the negative input terminal of the first comparator is connected to the sampling signal, the output terminal of the first comparator is connected to the control terminal of the switch tube; and/or, the second comparator, the The negative input terminal of the second comparator is connected to the second reference signal, the positive input terminal of the second comparator is connected to the sampling signal, and the output terminal of the second comparator is connected to the control terminal of the switch tube ,
  • the reference signal is the first reference signal or the second reference signal.
  • the on-voltage of the switch tube is greater than zero, that is, the switch tube is an N-type metal oxide semiconductor field effect transistor or an NPN-type triode, and when the drive signal of the control terminal (gate or base) is high Conduction.
  • the first comparator is used to compare the magnitude relationship between the sampling signal of the positive half axis and the first reference signal. According to the above connection method, it can be known that the positive sampling signal is greater than the first reference signal, and the first comparator outputs a low level.
  • the second comparator is used to compare the magnitude relationship between the sampling signal of the negative half axis and the second reference signal. According to the above connection method, it can be known that the negative sampling signal is smaller than the second reference signal, and the second comparator output is low. Level signal, low-level signal is transmitted to the control end of the switch tube (N-type metal oxide semiconductor field effect transistor or NPN-type triode), that is, as a cut-off signal to directly control the switch tube to cut off.
  • the switch tube N-type metal oxide semiconductor field effect transistor or NPN-type triode
  • the second comparison module outputs a cut-off signal to the control terminal of the switch tube to directly turn off the switch tube, which improves the reliability of overcurrent protection (or overvoltage protection) , Shorten the response time of overcurrent protection (or overvoltage protection).
  • it further includes: a unidirectional conducting element, the first end of the unidirectional conducting element is connected to the control end of the switch tube, and the second end of the unidirectional conducting element Connected to the output end of the first comparison module, and/or, the second end of the one-way conducting element is connected to the output end of the second comparison module, wherein the one-way conducting element is configured In order to unidirectionally transmit the cut-off signal to the control end of the switch tube.
  • the control terminal of the switch tube receives the control signal of the driver and turns on or off according to the control signal.
  • the second end of the unidirectional conduction element can be connected to the output end of the first comparison module and the output end of the second comparison module at the same time.
  • Any comparison module outputs a cut-off signal, which can be pulled by the unidirectional conduction element.
  • Low control terminal to turn off the switch tube.
  • the power factor correction module includes two parallel-connected half-bridge circuits, denoted as a first half-bridge circuit and a second half-bridge circuit.
  • a half-bridge circuit a driver, the driver is connected to the output terminal of the Hall sensor, the driver detects that the power supply signal is greater than the bus voltage, and the sampling signal is greater than or equal to a preset voltage threshold, and the The input current of the second half-bridge circuit is greater than or equal to a preset current threshold, and the driver outputs a pulse drive signal to the first half-bridge circuit, wherein the pulse drive signal is configured to control the first half-bridge
  • the two switch tubes in the circuit are turned on alternately.
  • the current in the power supply signal is collected by the Hall sensor, and it is determined by comparison that the driving power supply signal is greater than the bus voltage, and the sampling signal is greater than or equal to the voltage threshold, and the input current of the second half-bridge circuit is greater than or equal to
  • the preset current threshold controls the first half-bridge circuit to start working, that is, the pulse drive signal is used to control the first half-bridge circuit to work.
  • the first half-bridge circuit works in high-frequency mode with a switching frequency greater than 1KHz to reduce the circuit The impact of abnormal state on the switch tube.
  • the power factor correction module includes two parallel half-bridge circuits, and each of the four bridge arms is equipped with switch tubes, which constitutes a totem pole type PFC (Power Factor Correction, power factor correction) module, optionally ,
  • the upper switch tube in the half-bridge circuit is an NPN transistor
  • the lower switch tube is a PNP type transistor
  • the upper switch tube and the lower switch tube are connected by a common emitter, and the emitter is also an output of the totem pole PFC module end.
  • the voltage threshold value ranges from 0 to 200V
  • the current threshold value ranges from 0 to 10A.
  • the switch may be provided in a totem columnar module as PFC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET transistor), and the switch may be a switch-type S i C or G a N-type switch, and therefore, the switching frequency of the switch can be further improved, although the running load can be further enhance energy efficiency, however, a stronger electromagnetic interference signals, which requires addition of filter module to reduce electromagnetic interference signals.
  • PFC MOSFET Metal-Oxide-Semiconductor Field Effect Transistor
  • a reverse freewheeling diode is integrated between the source (emitter) and the drain (collector) of the switch tube of the totem pole PFC.
  • the first half-bridge circuit includes a first switching tube and a second switching tube
  • the second half-bridge circuit includes a third switching tube and a fourth switching tube.
  • the common terminal between the first switch tube and the second switch tube is connected to the first line of the power supply signal
  • the common terminal between the third switch tube and the fourth switch tube is connected to the power supply
  • the second line of the signal, and the common end between the first switch tube and the fourth switch tube is connected to the high-voltage bus in the bus circuit, the second switch tube and the third switch tube
  • the common end between the two is connected to the low-voltage bus, where the power supply signal is a positive half-wave signal, the driver controls the third switching tube to turn on, and at the same time, the driver controls the fourth switching tube to turn off,
  • the power supply signal is a negative half-wave signal
  • the driver controls the third switching tube to turn off, and at the same time, the driver controls the fourth switching tube to turn on.
  • the switch tube is a metal oxide semiconductor field effect transistor or an insulated gate bipolar transistor, wherein the gate of the metal oxide semiconductor field effect transistor is connected to the controller
  • the command output terminal of the MOSFET, a reverse freewheeling diode is connected between the source and drain of the metal oxide semiconductor field effect transistor, and the base of the insulated gate bipolar transistor is connected to the command output terminal of the controller, so A reverse freewheeling diode is connected between the emitter and the collector of the insulated gate bipolar transistor.
  • the metal oxide semiconductor field effect transistor may be a field effect transistor or a depletion type enhancement type field effect transistor can also select transistors S i C or G a N transistors.
  • it further includes: an electrolytic capacitor provided at the output end of the power factor correction module, and the electrolytic capacitor is configured to receive the pulsating DC signal and convert it into a DC signal;
  • An inverter is connected to the output terminal of the electrolytic capacitor, and the inverter is configured to control the DC signal to supply power to the load.
  • the electrolytic capacitor can provide power for load operation, and on the other hand, the electrolytic capacitor can also absorb the surge signal contained in the drive control circuit. Further reducing the electromagnetic interference signal and noise flowing to the inverter is conducive to improving the reliability of load operation.
  • the inverter includes two parallel half-bridge circuits, which can drive a single-phase load, and the inverter includes three parallel half-bridge circuits, which can drive a three-phase load.
  • the capacitance value of the electrolytic capacitor ranges from 10 uF to 20000 uF.
  • a household electrical appliance including: a load; the drive control circuit according to any one of the technical solutions of the first aspect of the present application, the dynamic control circuit is Configure the control power signal to supply power to the load.
  • the home appliance includes the drive control circuit as described in the above technical solution. Therefore, the home appliance includes all the beneficial effects of the drive control circuit as described in the above technical solution, which will not be repeated again.
  • the household electrical appliance includes at least one of an air conditioner, a refrigerator, a fan, a range hood, a vacuum cleaner, and a host computer.
  • Fig. 1 shows a schematic diagram of a drive control circuit of an embodiment in the prior art
  • Fig. 2 shows a timing diagram of a drive control circuit according to an embodiment of the present application
  • Fig. 3 shows a schematic diagram of a drive control circuit according to an embodiment of the present application
  • Fig. 4 shows a schematic diagram of a drive control circuit according to another embodiment of the present application.
  • Fig. 5 shows a schematic diagram of a drive control circuit according to another embodiment of the present application.
  • Fig. 6 shows a schematic diagram of a drive control circuit according to another embodiment of the present application.
  • Fig. 7 shows a schematic diagram of a drive control circuit according to another embodiment of the present application.
  • an inductor L As shown in Figure 1, after the AC signal AC is input to the drive control circuit, an inductor L, a totem pole PFC (Power Factor Correction, power factor correction) module, an electrolytic capacitor E and an inverter are usually used to form the motor (load)
  • a large number of switching tubes (the first switching tube Q 1 , the second switching tube Q 2 , the third switching tube Q 3 and the fourth switching tube Q 4 ) are usually arranged in the totem pole PFC module, in addition, A Hall sensor S is set in the charging circuit of the inductor L, and the current is detected based on the Hall sensor S.
  • a first reverse freewheeling diode D 1 is arranged between the source and drain of the first switching tube Q 1
  • a second reverse freewheeling diode D 1 is arranged between the source and drain of the second switching tube Q 2 .
  • a reverse freewheeling diode D 2 , a third reverse freewheeling diode D 3 is provided between the source and drain of the third switching tube Q 3
  • a third reverse freewheeling diode D 3 is provided between the source and drain of the fourth switching tube Q 4
  • the fourth reverse freewheeling diode D 4 is arranged between the source and drain of the first switching tube Q 1
  • a second reverse freewheeling diode D 1 is arranged between the source and drain of the second switching tube Q 2 .
  • a reverse freewheeling diode D 2 , a third reverse freewheeling diode D 3 is provided between the source and drain of the third switching tube Q 3
  • a third reverse freewheeling diode D 3 is provided between the source and drain of the fourth switching tube Q 4 The
  • totem pole type PFC (Power Factor Correction, power factor correction) modules usually work in the following modes:
  • the controller outputs a pulse drive signal to the first switching tube Q 1 and the second switching tube Q 2 , the first switching tube Q 1
  • the duty cycle of is a variable value (increasing from small or decreasing from large to small) or a preset fixed value.
  • the on-time of the first switching tube Q 1 is complementary to the on-time of the second switching tube Q 2 .
  • the third switching tube Q 3 is turned on, and the fourth switching tube Q 4 is turned off.
  • the controller outputs pulse drive signals to the first switching tube Q 1 and the second switching tube Q 2 , the first switching tube Q 1
  • the duty cycle of is a variable value (increasing from small or decreasing from large to small) or a preset fixed value.
  • the on-time of the first switching tube Q 1 is complementary to the on-time of the second switching tube Q 2 .
  • the third switching tube Q 3 is turned off, and the fourth switching tube Q 4 is turned on.
  • the switch is an N-type MOSFET, and the peak current I dg generated by the parasitic capacitance C dg flows from the gate to the drain.
  • the peak current of the second switching tube Q 2 will cause the gate of the first switching tube Q 1 to generate a peak voltage, which may break down the first switching tube Q 1 .
  • the controller is connected to the driver and drives the switch tube to be turned on or off through the driver.
  • a first resistor R 1 is connected between the gate of the first switch tube Q 1 and the driver (mainly used for current limiting and voltage division)
  • a second resistor R 2 (mainly used to drive conduction) is connected between the gate and source of the first switch tube Q 1
  • a third resistor R 3 is connected between the gate and the driver of the second switch tube Q 2 ( Mainly used for current limiting and voltage division)
  • a fourth resistor R 4 (mainly used to drive conduction) is connected between the gate and source of the second switch tube Q 2 .
  • the drive control circuit includes a half-bridge circuit 100 connected to the bus circuit, and the half-bridge circuit 100 is connected to the bus circuit.
  • the bridge circuit 100 is configured to perform conversion processing on an AC signal AC.
  • the half-bridge circuit 100 specifically includes: a switch tube configured to have a control terminal; a sampling resistor R 0 , connected in series to the bus circuit In the low-voltage bus, the first comparison module C 0 , the first input terminal of the first comparison module C 0 is configured to connect to the bus reference signal B 0 , and the first comparison module C 0 The input terminal is connected to the first terminal of the sampling resistor R 0 , and the second input terminal of the first comparison module C 0 is configured to be connected to the second terminal of the sampling resistor R 0 .
  • the output terminal of a comparison module C 0 is connected to the control terminal of the switch tube, the voltage division value of the sampling resistor R 0 is greater than the bus reference signal B 0 , and the first comparison module C 0
  • the switch tube outputs a cut-off signal.
  • the parasitic capacitance C dg is amplified by the switching tube It will cause voltage interference between the two switching tubes.
  • the second switching tube (denoted as the lower switching tube) starts to turn on, the parasitic capacitance C dg of the lower switching tube generates a spike voltage. This spike voltage is the peak current If the form impacts the first switching tube, the first switching tube (denoted as the upper switching tube) may be broken down, which in turn causes the half-bridge circuit 100 to malfunction.
  • the half-bridge circuit 100 is directly connected, and the voltage division value of the sampling resistor R 0 is greater than the bus reference signal B 0 , the comparison result output by the first comparison module C 0 is the cut-off signal, which does not require a driver to trigger the switch to cut off, which can further reduce the possibility of the half-bridge circuit 100 being through.
  • it further includes: a Hall sensor S configured to sample the electrical signal flowing through the half-bridge circuit 100 to obtain a corresponding sampling signal;
  • the second comparison module the first input terminal of the second comparison module is configured to access the reference signal, and the second input terminal of the second comparison module is configured to access the sampling signal, wherein,
  • the output terminal of the second comparison module is connected to the control terminal of the switch tube, the absolute value of the sampling signal is greater than the reference signal, and the second comparison module outputs a cut-off signal to the switch tube.
  • the Hall sensor S and the second comparison module in the half-bridge circuit 100 can perform over-current protection and over-voltage protection on the switch tube, not only can the parasitic capacitance C dg and the power supply signal half be reduced
  • the impact caused by the bridge circuit 100 can also reduce the power consumption of the half-bridge circuit 100.
  • the cost of the drive control circuit is also reduced, and the reliability of the drive control circuit is improved. And stability.
  • the output terminal of the second comparison module is connected to the control terminal of the switch tube, the absolute value of the sampling signal is greater than the reference signal, and the second comparison module outputs a cut-off signal to the switch tube, especially It is in over-current protection or over-voltage protection, without the driver to trigger the switch tube to cut off, which can further reduce the possibility of the switch tube being burned or broken down.
  • the electrical signal flowing through the half-bridge circuit 100 is sampled by setting the Hall sensor S, and the sampling result is transmitted to the driver, and the switching frequency is adjusted according to the detection result, for example, when the current in the power supply signal is detected Carrying more spike signals, in order to prevent the spike signals from being amplified and superimposed by the half-bridge circuit 100, the switching frequency can be reduced to reduce electromagnetic interference signals and spike signals.
  • the sampling frequency of the Hall sensor S ranges from 1 KHz to 1000 MHz, and the sampling signal is also used for closed control of the current loop.
  • the conduction voltage of the switch tube is greater than zero
  • the second comparison module further includes: a first comparator C 1 , a positive input terminal of the first comparator C 1 access a first reference signal B 1, the first comparator negative input terminal C of the access to a sampling signal, said first comparator output terminal C 1 is connected to the control terminal of the switch tube; and /Or, the second comparator C 2 , the negative input terminal of the second comparator C 2 is connected to the second reference signal B 2 , and the positive input terminal of the second comparator C 2 is connected to the sampling signal, The output terminal of the second comparator C 2 is connected to the control terminal of the switch tube, wherein the reference signal is the first reference signal B 1 or the second reference signal B 2 .
  • the on-voltage of the switch tube is greater than zero, that is, the switch tube is an N-type metal oxide semiconductor field effect transistor or an NPN-type triode, and when the drive signal of the control terminal (gate or base) is high Conduction.
  • a first comparator for comparing the sampled signal C n-1 of side B of the first reference signal magnitude relation between 1, seen according to the above-described connection mode, a positive signal is greater than a first reference signal sample B 1, the first A comparator C 1 outputs a low-level signal.
  • the second comparator C 2 is used to compare the magnitude relationship between the sampling signal of the negative semi-axis and the second reference signal B 2.
  • the negative The sampling signal is smaller than the second reference signal B 2 , the second comparator C 2 outputs a low-level signal, and the low-level signal is transmitted to the control terminal of the switch tube (N-type metal oxide semiconductor field effect transistor or NPN-type triode), namely As a cut-off signal, the switch tube is directly controlled to cut off.
  • the switch tube N-type metal oxide semiconductor field effect transistor or NPN-type triode
  • the second comparison module outputs a cut-off signal to the control terminal of the switch tube to directly turn off the switch tube, which improves the reliability of overcurrent protection (or overvoltage protection) , Shorten the response time of overcurrent protection (or overvoltage protection).
  • it further includes: a unidirectional conducting element D 0 , the first end of the unidirectional conducting element D 0 is connected to the control end of the switch tube, and the unidirectional conducting element The second terminal of D 0 is connected to the output terminal of the first comparison module C 0 , and/or the second terminal of the unidirectional conducting element D 0 is connected to the output terminal of the second comparison module, wherein, the unidirectional conducting element D 0 is configured to unidirectionally transmit the cut-off signal to the control end of the switch tube.
  • the comparison module by setting the first end of the unidirectional conducting element D 0 to be connected to the control end of the switch tube, only the comparison module outputs a cut-off signal, and the unidirectional conducting element is turned on, that is, it is directly turned off.
  • the control terminal of the switch tube receives the control signal of the driver and turns on or off according to the control signal.
  • the second end of the unidirectional conduction element D 0 can be connected to the output end of the first comparison module C0 and the output end of the second comparison module at the same time.
  • Any comparison module outputs a cut-off signal, which can pass through the unidirectional
  • the pass element D 0 pulls down the control terminal, and the current I of the unidirectional pass element flows as shown in FIG. 6 and FIG. 7 to turn off the switch tube.
  • the first switching tube Q 1 and the third switching tube Q 3 receive the turn-on signal sent by the driver, and the second switching tube Q 2 and the fourth switching tube Q 4 receive the cut-off signal sent by the driver. and there is a dead time between the turn-on time of the switch Q 2 is turned on a second time and a switch Q, at the same time, the third time switch Q 3 is turned on and the fourth switching transistor Q 4 is turned There is a dead time between the open times.
  • the power factor correction module includes two parallel-connected half-bridge circuits 100, which are respectively referred to as the first half-bridge circuit 100 and The second half-bridge circuit 100; a driver, the driver is connected to the output terminal of the Hall sensor S, the driver detects that the power supply signal is greater than the bus voltage, and the sampling signal is greater than or equal to a preset voltage threshold , And the input current of the second half-bridge circuit 100 is greater than or equal to the preset current threshold, the driver outputs a pulse drive signal to the first half-bridge circuit 100, wherein the pulse drive signal is configured to control
  • the two switch tubes in the first half-bridge circuit 100 are turned on alternately.
  • the current in the power supply signal is collected by the Hall sensor S, and it is determined by comparison that the driving power supply signal is greater than the bus voltage, and the sampling signal is greater than or equal to the voltage threshold, and the input current of the second half-bridge circuit 100 is greater than Or equal to the preset current threshold, the first half-bridge circuit 100 is controlled to start working, that is, the first half-bridge circuit 100 is controlled to work with a pulse drive signal.
  • the first half-bridge circuit 100 works in a high-frequency mode, and the switching frequency is greater than 1KHz, in order to reduce the impact of the abnormal state of the circuit on the switch tube.
  • the driver can receive three over-current protection signals, as follows:
  • the power factor correction module includes two parallel half-bridge circuits 100, and the four bridge arms are equipped with switch tubes, which constitutes a totem pole PFC (Power Factor Correction, power factor correction) module, optional Ground, the upper switch tube in the half-bridge circuit 100 is an NPN type transistor, the lower switch tube is a PNP type transistor, and the upper switch tube and the lower switch tube are connected by a common emitter, and the emitter is also the totem pole PFC module.
  • PFC Power Factor Correction, power factor correction
  • the voltage threshold value ranges from 0 to 200V
  • the current threshold value ranges from 0 to 10A.
  • the switch may be provided in a totem columnar module as PFC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET transistor), and the switch may be a switch-type S i C or G a N-type switch, and therefore, the switching frequency of the switch can be further improved, although the running load can be further enhance energy efficiency, however, a stronger electromagnetic interference signals, which requires addition of filter module to reduce electromagnetic interference signals.
  • PFC MOSFET Metal-Oxide-Semiconductor Field Effect Transistor
  • a reverse freewheeling diode is integrated between the source (emitter) and the drain (collector) of the switch tube of the totem pole PFC.
  • the first half-bridge circuit includes a first switching tube Q 1 and a second switching tube Q 2
  • the second half-bridge circuit includes a third switching tube Q 3 and a second switching tube Q 2
  • Four switching tubes Q 4 the common end between the first switching tube Q 1 and the second switching tube Q 2 is connected to the first line of the power supply signal
  • the third switching tube Q 3 and the The common end between the fourth switching tube Q 4 is connected to the second line of the power supply signal
  • the common end between the first switching tube Q 1 and the fourth switching tube Q 4 is connected to the bus
  • the high-voltage bus in the circuit, the common end between the second switching tube Q 2 and the third switching tube Q 3 is connected to the low-voltage bus, wherein the power supply signal is a positive half-wave signal, and the driver
  • the third switching tube Q 3 is controlled to be turned on, and at the same time, the driver controls the fourth switching tube Q 4 to be turned off, the power supply signal is a negative half wave signal, and the driver controls the third
  • the switch tube is a metal oxide semiconductor field effect transistor or an insulated gate bipolar transistor, wherein the gate of the metal oxide semiconductor field effect transistor is connected to the controller
  • the command output terminal of the MOSFET, a reverse freewheeling diode is connected between the source and drain of the metal oxide semiconductor field effect transistor, and the base of the insulated gate bipolar transistor is connected to the command output terminal of the controller, so A reverse freewheeling diode is connected between the emitter and the collector of the insulated gate bipolar transistor.
  • the metal oxide semiconductor field effect transistor may be a field effect transistor or a depletion type enhancement type field effect transistor can also select transistors S i C or G a N transistors.
  • it further includes: an electrolytic capacitor E, arranged at the output end of the power factor correction module, and the electrolytic capacitor E is configured to receive the pulsating direct current signal and convert it into direct current Signal; an inverter, connected to the output end of the electrolytic capacitor E, the inverter is configured to control the DC signal to supply power to the load.
  • an electrolytic capacitor E arranged at the output end of the power factor correction module, and the electrolytic capacitor E is configured to receive the pulsating direct current signal and convert it into direct current Signal
  • an inverter connected to the output end of the electrolytic capacitor E, the inverter is configured to control the DC signal to supply power to the load.
  • the electrolytic capacitor E can provide power for load operation, and on the other hand, the electrolytic capacitor E can also absorb the waves contained in the drive control circuit.
  • the surge signal can further reduce the electromagnetic interference signal and noise flowing to the inverter, which is beneficial to improve the reliability of load operation.
  • the inverter includes two parallel half-bridge circuits 100, which can drive a single-phase load, and the inverter includes three parallel half-bridge circuits 100, which can drive a three-phase load.
  • the capacitance value of the electrolytic capacitor E ranges from 10 uF to 20000 uF.
  • this application proposes a drive control circuit and household electrical appliances.
  • the half-bridge circuit By providing a first comparison module and connecting the first comparison module across the two ends of the sampling resistor, the half-bridge circuit Through, the voltage division value of the sampling resistor is greater than the bus reference signal, and the first comparison module outputs the comparison result as the cut-off signal, which does not require a driver to trigger the switch tube to cut off, which can further reduce the possibility of the half-bridge circuit being through.
  • the embodiments of the present application can be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, this application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.
  • a computer-usable storage media including but not limited to disk storage, CD-ROM, optical storage, etc.
  • These computer program instructions can also be stored in a computer-readable memory that can guide a computer or other programmable data processing equipment to work in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture including the instruction device.
  • the device implements the functions specified in one process or multiple processes in the flowchart and/or one block or multiple blocks in the block diagram.
  • These computer program instructions can also be loaded on a computer or other programmable data processing equipment, so that a series of operation steps are executed on the computer or other programmable equipment to produce computer-implemented processing, so as to execute on the computer or other programmable equipment.
  • the instructions provide steps for implementing functions specified in a flow or multiple flows in the flowchart and/or a block or multiple blocks in the block diagram.
  • any reference signs located between parentheses should not be constructed as limitations on the claims.
  • the word “comprising” does not exclude the presence of parts or steps not listed in the claims.
  • the word “a” or “an” preceding a component does not exclude the presence of multiple such components.
  • This application can be implemented by means of hardware including different components and by means of a suitably programmed computer. In the unit claims listing dry devices, each of these devices can be embodied by the same hardware item.
  • the use of the words first, second, and third, etc. do not indicate any order. These words can be interpreted as names.

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Abstract

本申请提供了一种驱动控制电路和家电设备，其中，电路包括：半桥电路，半桥电路接入于母线电路中，半桥电路被配置为对供电信号进行转换处理，半桥电路具体包括：开关管，开关管被配置为具有控制端；采样电阻，串联于母线电路中的低压母线中，第一比较模组，第一比较模组的第一输入端被配置为接入母线基准信号，且第一比较模组的第一输入端连接至采样电阻的第一端，第一比较模组的第二输入端被配置为接入采样电阻的第二端，第一比较模组的输出端连接至开关管的控制端，采样电阻的分压值大于母线基准信号，第一比较模组向开关管输出截止信号。通过本申请的技术方案，降低了过流信号对开关管的冲击，提升了驱动控制电路异常时的保护效果。

Description

驱动控制电路和家电设备
本申请要求于2019年07月05日提交中国专利局、申请号为201910605429.6、发明名称为“驱动控制电路和家电设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及驱动控制领域，具体而言，涉及一种驱动控制电路和一种家电设备。
背景技术
目前变频空调市场，为了提升负载运行能效，通常采用整流器、电感器、PFC(Power Factor Correction，功率因数校正)模组、电解电容和逆变器构成电机(负载)的驱动控制电路。
相关技术中，为了降低BOOST型PFC的功耗和整流器的功耗，采用图腾柱型PFC模组来替代BOOST型PFC和整流器，但是，为了进一步地提高电路的能效，通常设置图腾柱型PFC模组中的至少一个半桥电路保持高频工作。
具体地，如图1所示，采用电感器L、图腾柱型PFC(Power Factor Correction，功率因数校正)模组、电解电容E和逆变器构成电机(负载)的驱动控制电路，上述驱动控制电路在运行过程中至少存在以下技术缺陷：
(1)由于图腾柱型PFC模组中通常设置大量开关管(第一开关管Q 1、第二开关管Q 2、第三开关管Q 3和第四开关管Q 4)，且开关管以高频方式工作，这就可能导致驱动控制电路中产生大量的高次谐波。
(2)基于密勒效应可知，开关管固有的寄生电容会产生大量尖峰电压、尖峰电流和功耗，这会严重影响图腾柱型PFC模组、驱动控制电路和家电设备的可靠性。
另外，整个说明书对背景技术的任何讨论，并不代表该背景技术一定是所 属领域技术人员所知晓的现有技术，整个说明书中的对现有技术的任何讨论并不代表认为该现有技术一定是广泛公知的或一定构成本领域的公知常识。
申请内容
本申请旨在至少解决现有技术或相关技术中存在的技术问题之一。
为此，本申请的一个目的在于提出了一种驱动控制电路。
本申请的又一个目的在于提出了一种家电设备。
在本申请的第一方面的技术方案中，提出了一种驱动控制电路，包括：半桥电路，所述半桥电路接入于母线电路中，所述半桥电路被配置为对供电信号进行转换处理，所述半桥电路具体包括：开关管，所述开关管被配置为具有控制端；采样电阻，串联于所述母线电路中的低压母线中，第一比较模组，所述第一比较模组的第一输入端被配置为接入母线基准信号，且所述第一比较模组的第一输入端连接至所述采样电阻的第一端，所述第一比较模组的第二输入端被配置为接入所述采样电阻的第二端，其中，所述第一比较模组的输出端连接至所述开关管的控制端，所述采样电阻的分压值大于所述母线基准信号，所述第一比较模组向所述开关管输出截止信号。
在该技术方案中，对于设有至少两个开关管的半桥电路而言，由于开关管的控制端与输出端之间存在寄生电容，寄生电容在开关管的放大作用下会引起两个开关管之间的电压干扰，譬如，第二开关管(记作下开关管)开始导通瞬间，下开关管的寄生电容生成一个尖峰电压，这个尖峰电压以尖峰电流的形式冲击第一开关管，就可能导致第一开关管(记作上开关管)被击穿，进而导致半桥电路故障。
因此，通过设置第一比较模组，并将第一比较模组跨接于采样电阻的两端，半桥电路直通，采样电阻的分压值大于母线基准信号，第一比较模组输出比较结果即为截止信号，不需要经过驱动器来触发开关管截止，能够进一步地降低半桥电路直通的可能性。
另外，根据本申请上述实施例的驱动控制电路，还可以具有如下附加的技术特征：
在上述任一技术方案中，可选地，还包括：霍尔传感器，所述霍尔传感器被配置为对流经所述半桥电路的电信号进行采样，以获取对应的采样信号；第二比较模组，所述第二比较模组的第一输入端被配置为接入基准信号，所述第二比较模组的第二输入端被配置为接入所述采样信号，其中，所述第二比较模组的输出端连接至所述开关管的控制端，所述采样信号的绝对值大于所述基准信号，所述第二比较模组向所述开关管输出截止信号。
在该技术方案中，通过在半桥电路中设置霍尔传感器和第二比较模组，以对开关管进行过流保护和过压保护，不仅能够降低寄生电容和供电信号对半桥电路造成的冲击，而且能够降低半桥电路的功耗，另外，由于不需要为半桥电路设置隔离电路，也降低了驱动控制电路的成本，进而提升了驱动控制电路的可靠性和稳定性。
其中，第二比较模组的输出端连接至所述开关管的控制端，所述采样信号的绝对值大于所述基准信号，所述第二比较模组向所述开关管输出截止信号，尤其是在过流保护或过压保护，不需要经过驱动器来触发开关管截止，能够进一步地降低开关管被烧毁或击穿的可能性。
另外，通过设置霍尔传感器对流经所述半桥电路的电信号进行采样，并将采样结果传输给驱动器，并根据检测结果对开关频率进行调整，譬如，在检测到供电信号中的电流携带较多尖峰信号，为了避免尖峰信号经过半桥电路放大和叠加，可以降低开关频率来降低电磁干扰信号和尖峰信号。
可选地，霍尔传感器的采样频率范围为1KHz～1000MHz，采样信号也用于电流环的闭合控制。
在上述任一技术方案中，可选地，开关管的导通电压大于零，所述第二比较模组还包括：第一比较器，所述第一比较器的正输入端接入第一基准信号，所述第一比较器的负输入端接入所述采样信号，所述第一比较器的输出端连接至所述开关管的控制端；和/或，第二比较器，所述第二比较器的负输入端接入第二基准信号，所述第二比较器的正输入端接入所述采样信号，所述第二比较器的输出端连接至所述开关管的控制端，其中，所述基准信号为所述第一基准信号或所述第二基准信号。
在该技术方案中，开关管的导通电压大于零，即开关管为N型金属氧 化物半导体场效应晶体管或NPN型三极管，其控制端(栅极或基极)的驱动信号为高电平时导通。
进一步地，第一比较器用于比较正半轴的采样信号与第一基准信号之间的大小关系，按照上述连接方式可知，正的采样信号大于第一基准信号，第一比较器输出低电平信号，同理，第二比较器用于比较负半轴的采样信号与第二基准信号之间的大小关系，按照上述连接方式可知，负的采样信号小于第二基准信号，第二比较器输出低电平信号，低电平信号传输至开关管(N型金属氧化物半导体场效应晶体管或NPN型三极管)的控制端，即作为截止信号直接控制开关管截止。
综上，只要采样信号的幅值大于基准信号，第二比较模组即向开关管的控制端输出截止信号，以直接关断开关管，提高了过流保护(或过压保护)的可靠性，缩短了过流保护(或过压保护)的响应时间。
在上述任一技术方案中，可选地，还包括：单向导通元件，所述单向导通元件的第一端连接至所述开关管的控制端，所述单向导通元件的第二端连接至所述第一比较模组的输出端，和/或，所述单向导通元件的第二端连接至所述第二比较模组的输出端，其中，所述单向导通元件被配置为将所述截止信号单向传输至所述开关管的控制端。
在该技术方案中，通过设置所述单向导通元件的第一端连接至所述开关管的控制端，仅在比较模组输出截止信号，单向导通器件导通，也即直接关断开关管，而在未输出截止信号，开关管的控制端接收驱动器的控制信号，并根据控制信号导通或截止。
其中，单向导通元件的第二端可以同时连接至第一比较模组的输出端，以及第二比较模组的输出端，任一比较模组输出截止信号，均可以通过单向导通元件拉低控制端，以关断所述开关管。
在上述任一技术方案中，可选地，还包括：功率因数校正模组，所述功率因数校正模组包括两个并联的所述半桥电路，分别记作第一半桥电路和第二半桥电路；驱动器，所述驱动器连接至所述霍尔传感器的输出端，所述驱动器检测到所述供电信号大于母线电压，且所述采样信号大于或等于预设的电压阈值，且所述第二半桥电路的输入电流大于或等于预设的电 流阈值，所述驱动器向所述第一半桥电路输出脉冲驱动信号，其中，所述脉冲驱动信号被配置为控制所述第一半桥电路中的两个开关管交替导通。
在该技术方案中，通过霍尔传感器采集供电信号中的电流大小，并通过比较确定驱动供电信号大于母线电压，且采样信号大于或等于电压阈值，以及第二半桥电路的输入电流大于或等于预设的电流阈值，控制第一半桥电路开始工作，也即以脉冲驱动信号来控制第一半桥电路工作，通常第一半桥电路以高频模式工作，开关频率大于1KHz，以降低电路异常状态对开关管的冲击。
其中，功率因数校正模组包括两个并联的半桥电路，且四个桥臂中均设有开关管，即构成了图腾柱型PFC(Power Factor Correction，功率因数校正)模组，可选地，半桥电路中的上开关管为NPN型三极管，下开关管是PNP型三极管，且上开关管和下开关管为共发射极连接，发射极也为上述图腾柱型PFC模组的一个输出端。
可选地，电压阈值的取值范围为0～200V，电流阈值的阈值取值0～10A。
可选地，也可以将图腾柱型PFC模组中的开关管设置为MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor，金属氧化物半导体场效应晶体管)，开关管也可以为S iC型开关管或G aN型开关管，因此，开关管的开关频率可以进一步地提升，虽然能够进一步地提升负载运行能效，但是，电磁干扰信号更强，这就需要加入滤波模组来降低电磁干扰信号。
可选地，上述图腾柱型PFC的开关管的源极(发射极)和漏极(集电极)之间集成有反向续流二极管。
在上述任一技术方案中，可选地，所述第一半桥电路包括第一开关管和第二开关管，所述第二半桥电路包括第三开关管和第四开关管，所述第一开关管和所述第二开关管之间的公共端接入所述供电信号的第一线路，所述第三开关管和所述第四开关管之间的公共端接入所述供电信号的第二线路，以及所述第一开关管与所述第四开关管之间的公共端接入所述母线电路中的高压母线，所述第二开关管与所述第三开关管之间的公共端接入所述低压母线，其中，所述供电信号为正半波信号，所述驱动器控制所述第三开关管导通，同时，所述驱动器控制所述第四开关管截止，所述供电 信号为负半波信号，所述驱动器控制所述第三开关管截止，同时，所述驱动器控制所述第四开关管导通。
在上述任一技术方案中，可选地，所述开关管为金属氧化物半导体场效应晶体管或绝缘栅双极型晶体管，其中，所述金属氧化物半导体场效应晶体管的栅极连接至控制器的指令输出端，所述金属氧化物半导体场效应晶体管的源极和漏极之间接入反向续流二极管，所述绝缘栅双极型晶体管的基极连接至控制器的指令输出端，所述绝缘栅双极型晶体管的发射极和集电极之间接入反向续流二极管。
其中，金属氧化物半导体场效应晶体管可以为耗尽型场效应晶体管或增强型场效应晶体管，也可以选择S iC晶体管或G aN晶体管。
在上述任一技术方案中，可选地，还包括：电解电容，设于所述功率因数校正模组的输出端，所述电解电容被配置为接收所述脉动直流信号并转换为直流信号；逆变器，连接至所述电解电容的输出端，所述逆变器被配置为控制所述直流信号对负载供电。
在该技术方案中，通过在半桥电路的输出端设置电解电容，一方面，电解电容能够提供负载运行的电量，另一方面，电解电容也能吸收驱动控制电路中包含的浪涌信号，能够进一步地降低流向逆变器的电磁干扰信号和噪声，有利于提升负载运行的可靠性。
其中，逆变器包括两个并联的半桥电路，可以驱动单相负载运行，逆变器包括三个并联的半桥电路，可以驱动三相负载运行。
在上述任一技术方案中，可选地，所述电解电容的容值取值范围为10uF～20000uF。
在本申请的第二方面的技术方案中，提出了一种家电设备，包括：负载；如本申请的第一方面中的任一项技术方案所述的驱动控制电路，所述动控制电路被配置控制供电信号对负载供电。
在该技术方案中，家电设备包括如上述技术方案中所述的驱动控制电路，因此，该家电设备包括如上述技术方案中所述的驱动控制电路的全部有益效果，再次不再赘述。
在上述技术方案中，可选地，所述家电设备包括空调器、电冰箱、风 扇、抽油烟机、吸尘器和电脑主机中的至少一种。
本申请的附加方面和优点将在下面的描述部分中变得明显，或通过本申请的实践了解到。
附图说明
本申请的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1示出了现有技术中的一个实施例的驱动控制电路的示意图；
图2示出了根据本申请的一个实施例的驱动控制电路的时序图；
图3示出了根据本申请的一个实施例的驱动控制电路的示意图；
图4示出了根据本申请的另一个实施例的驱动控制电路的示意图；
图5示出了根据本申请的另一个实施例的驱动控制电路的示意图；
图6示出了根据本申请的另一个实施例的驱动控制电路的示意图；
图7示出了根据本申请的另一个实施例的驱动控制电路的示意图。
具体实施方式
为了能够更清楚地理解本申请的上述目的、特征和优点，下面结合附图和具体实施方式对本申请进行进一步的详细描述。需要说明的是，在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。
在下面的描述中阐述了很多具体细节以便于充分理解本申请，但是，本申请还可以采用其他不同于在此描述的其他方式来实施，因此，本申请的保护范围并不受下面公开的具体实施例的限制。
下面结合图1至图7对根据本申请的实施例的驱动控制电路和家电设备进行具体说明。
如图1所示，交流信号AC输入至驱动控制电路后，通常采用电感器L、图腾柱型PFC(Power Factor Correction，功率因数校正)模组、电解电容E和逆变器构成电机(负载)的驱动控制电路，由于图腾柱型PFC模组中通常设置大量开关管(第一开关管Q 1、第二开关管Q 2、第三开关管Q 3和第四开关管Q 4)，另外，在电感器L的充电回路中设置霍尔传感器S，基于霍尔传感器S 检测电流。
如图1所示，第一开关管Q 1的源极和漏极之间设有第一反向续流二极管D 1，第二开关管Q 2的源极和漏极之间设有第二反向续流二极管D 2，第三开关管Q 3的源极和漏极之间设有第三反向续流二极管D 3，第四开关管Q 4的源极和漏极之间设有第四反向续流二极管D 4。
如图2所示，图腾柱型PFC(Power Factor Correction，功率因数校正)模组通常按照以下模式工作：
(1)在T 0～T 3时段内，记作交流电压U S的正半周波形，控制器向第一开关管Q 1和第二开关管Q 2输出脉冲驱动信号，第一开关管Q 1的占空比是可变的数值(由小增大或由大变小)或预设的定值，第一开关管Q 1的导通时间与第二开关管Q 2的导通时间互补，第三开关管Q 3导通，且第四开关管Q 4截止。
(2)在T 3～T 6时段内，记作交流电压U S的负半周波形，控制器向第一开关管Q 1和第二开关管Q 2输出脉冲驱动信号，第一开关管Q 1的占空比是可变的数值(由小增大或由大变小)或预设的定值，第一开关管Q 1的导通时间与第二开关管Q 2的导通时间互补，第三开关管Q 3截止，且第四开关管Q 4导通。
如图3所示，在图腾柱型PFC(Power Factor Correction，功率因数校正)模组中，开关管为N型MOSFET，寄生电容C dg产生的尖峰电流I dg方向由栅极流向漏极，第二开关管Q 2的尖峰电流会导致第一开关管Q 1的栅极产生尖峰电压，这个尖峰电压可能击穿第一开关管Q 1。
其中，控制器连接于驱动器，并通过驱动器驱动开关管导通或截止，譬如，第一开关管Q 1的栅极和驱动器之间接入第一电阻R 1(主要用于限流和分压)，第一开关管Q 1的栅极和源极之间接入第二电阻R 2(主要用于驱动导通)，第二开关管Q 2的栅极和驱动器之间接入第三电阻R 3(主要用于限流和分压)，第二开关管Q 2的栅极和源极之间接入第四电阻R 4(主要用于驱动导通)。
如图4、图5、图6和图7所示，根据本申请的一个实施例的驱动控制电路，包括：半桥电路100，所述半桥电路100接入于母线电路中，所述半桥电路100被配置为对交流信号AC进行转换处理，所述半桥电路100具体包括：开关管，所述开关管被配置为具有控制端；采样电阻R 0，串联于所述母线电路中的低压母线中，第一比较模组C 0，所述第一比较模组C 0 的第一输入端被配置为接入母线基准信号B 0，且所述第一比较模组C 0的第一输入端连接至所述采样电阻R 0的第一端，所述第一比较模组C 0的第二输入端被配置为接入所述采样电阻R 0的第二端，其中，所述第一比较模组C 0的输出端连接至所述开关管的控制端，所述采样电阻R 0的分压值大于所述母线基准信号B 0，所述第一比较模组C 0向所述开关管输出截止信号。
在该技术方案中，对于设有至少两个开关管的半桥电路100而言，由于开关管的控制端与输出端之间存在寄生电容C dg，寄生电容C dg在开关管的放大作用下会引起两个开关管之间的电压干扰，譬如，第二开关管(记作下开关管)开始导通瞬间，下开关管的寄生电容C dg生成一个尖峰电压，这个尖峰电压以尖峰电流的形式冲击第一开关管，就可能导致第一开关管(记作上开关管)被击穿，进而导致半桥电路100故障。
因此，通过设置第一比较模组C 0，并将第一比较模组C 0跨接于采样电阻R 0的两端，半桥电路100直通，采样电阻R 0的分压值大于母线基准信号B 0，第一比较模组C 0输出比较结果即为截止信号，不需要经过驱动器来触发开关管截止，能够进一步地降低半桥电路100直通的可能性。
另外，根据本申请上述实施例的驱动控制电路，还可以具有如下附加的技术特征：
在上述任一技术方案中，可选地，还包括：霍尔传感器S，所述霍尔传感器S被配置为对流经所述半桥电路100的电信号进行采样，以获取对应的采样信号；第二比较模组，所述第二比较模组的第一输入端被配置为接入基准信号，所述第二比较模组的第二输入端被配置为接入所述采样信号，其中，所述第二比较模组的输出端连接至所述开关管的控制端，所述采样信号的绝对值大于所述基准信号，所述第二比较模组向所述开关管输出截止信号。
在该技术方案中，通过在半桥电路100中设置霍尔传感器S和第二比较模组，以对开关管进行过流保护和过压保护，不仅能够降低寄生电容C dg和供电信号对半桥电路100造成的冲击，而且能够降低半桥电路100的功耗，另外，由于不需要为半桥电路100设置隔离电路，也降低了驱动控制电路的成本，进而提升了驱动控制电路的可靠性和稳定性。
其中，第二比较模组的输出端连接至所述开关管的控制端，所述采样信号的绝对值大于所述基准信号，所述第二比较模组向所述开关管输出截止信号，尤其是在过流保护或过压保护，不需要经过驱动器来触发开关管截止，能够进一步地降低开关管被烧毁或击穿的可能性。
另外，通过设置霍尔传感器S对流经所述半桥电路100的电信号进行采样，并将采样结果传输给驱动器，并根据检测结果对开关频率进行调整，譬如，在检测到供电信号中的电流携带较多尖峰信号，为了避免尖峰信号经过半桥电路100放大和叠加，可以降低开关频率来降低电磁干扰信号和尖峰信号。
可选地，霍尔传感器S的采样频率范围为1KHz～1000MHz，采样信号也用于电流环的闭合控制。
在上述任一技术方案中，可选地，开关管的导通电压大于零，所述第二比较模组还包括：第一比较器C 1，所述第一比较器C 1的正输入端接入第一基准信号B 1，所述第一比较器C 1的负输入端接入所述采样信号，所述第一比较器C 1的输出端连接至所述开关管的控制端；和/或，第二比较器C 2，所述第二比较器C 2的负输入端接入第二基准信号B 2，所述第二比较器C 2的正输入端接入所述采样信号，所述第二比较器C 2的输出端连接至所述开关管的控制端，其中，所述基准信号为所述第一基准信号B 1或所述第二基准信号B 2。
在该技术方案中，开关管的导通电压大于零，即开关管为N型金属氧化物半导体场效应晶体管或NPN型三极管，其控制端(栅极或基极)的驱动信号为高电平时导通。
进一步地，第一比较器C 1用于比较正半轴的采样信号与第一基准信号B 1之间的大小关系，按照上述连接方式可知，正的采样信号大于第一基准信号B 1，第一比较器C 1输出低电平信号，同理，第二比较器C 2用于比较负半轴的采样信号与第二基准信号B 2之间的大小关系，按照上述连接方式可知，负的采样信号小于第二基准信号B 2，第二比较器C 2输出低电平信号，低电平信号传输至开关管(N型金属氧化物半导体场效应晶体管或NPN型三极管)的控制端，即作为截止信号直接控制开关管截止。
综上，只要采样信号的幅值大于基准信号，第二比较模组即向开关管的控制端输出截止信号，以直接关断开关管，提高了过流保护(或过压保护)的可靠性，缩短了过流保护(或过压保护)的响应时间。
在上述任一技术方案中，可选地，还包括：单向导通元件D 0，所述单向导通元件D 0的第一端连接至所述开关管的控制端，所述单向导通元件D 0的第二端连接至所述第一比较模组C 0的输出端，和/或，所述单向导通元件D 0的第二端连接至所述第二比较模组的输出端，其中，所述单向导通元件D 0被配置为将所述截止信号单向传输至所述开关管的控制端。
在该技术方案中，通过设置所述单向导通元件D 0的第一端连接至所述开关管的控制端，仅在比较模组输出截止信号，单向导通器件导通，也即直接关断开关管，而在未输出截止信号，开关管的控制端接收驱动器的控制信号，并根据控制信号导通或截止。
其中，单向导通元件D 0的第二端可以同时连接至第一比较模组C0的输出端，以及第二比较模组的输出端，任一比较模组输出截止信号，均可以通过单向导通元件D 0拉低控制端，单向导通元件的电流I流向如图6和图7所示，以关断所述开关管。
如图4和图5所示，第一开关管Q 1和第三开关管Q 3接收驱动器发送的导通信号，第二开关管Q 2和第四开关管Q 4接收驱动器发送的截止信号，并且第一开关管Q 1的导通时间和第二开关管Q 2的导通时间之间存在死区时间，同时，第三开关管Q 3的导通时间和第四开关管Q 4的导通时间之间存在死区时间。
在上述任一技术方案中，可选地，还包括：功率因数校正模组，所述功率因数校正模组包括两个并联的所述半桥电路100，分别记作第一半桥电路100和第二半桥电路100；驱动器，所述驱动器连接至所述霍尔传感器S的输出端，所述驱动器检测到所述供电信号大于母线电压，且所述采样信号大于或等于预设的电压阈值，且所述第二半桥电路100的输入电流大于或等于预设的电流阈值，所述驱动器向所述第一半桥电路100输出脉冲驱动信号，其中，所述脉冲驱动信号被配置为控制所述第一半桥电路100中的两个开关管交替导通。
在该技术方案中，通过霍尔传感器S采集供电信号中的电流大小，并通过比较确定驱动供电信号大于母线电压，且采样信号大于或等于电压阈值，以及第二半桥电路100的输入电流大于或等于预设的电流阈值，控制第一半桥电路100开始工作，也即以脉冲驱动信号来控制第一半桥电路100工作，通常第一半桥电路100以高频模式工作，开关频率大于1KHz，以降低电路异常状态对开关管的冲击。
另外，如图6所示，驱动器能接收到三路过流保护信号，具体如下：
(1)第一比较器C 1和/或第二比较器C 2输出的比较信号102；
(2)霍尔传感器S输出的供电信号的采样信号104；
(3)第一比较模组C 0输出的母线信号的采样信号106。
其中，功率因数校正模组包括两个并联的半桥电路100，且四个桥臂中均设有开关管，即构成了图腾柱型PFC(Power Factor Correction，功率因数校正)模组，可选地，半桥电路100中的上开关管为NPN型三极管，下开关管是PNP型三极管，且上开关管和下开关管为共发射极连接，发射极也为上述图腾柱型PFC模组的一个输出端。
可选地，电压阈值的取值范围为0～200V，电流阈值的阈值取值0～10A。
可选地，也可以将图腾柱型PFC模组中的开关管设置为MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor，金属氧化物半导体场效应晶体管)，开关管也可以为S iC型开关管或G aN型开关管，因此，开关管的开关频率可以进一步地提升，虽然能够进一步地提升负载运行能效，但是，电磁干扰信号更强，这就需要加入滤波模组来降低电磁干扰信号。
可选地，上述图腾柱型PFC的开关管的源极(发射极)和漏极(集电极)之间集成有反向续流二极管。
在上述任一技术方案中，可选地，所述第一半桥电路包括第一开关管Q 1和第二开关管Q 2，所述第二半桥电路包括第三开关管Q 3和第四开关管Q 4，所述第一开关管Q 1和所述第二开关管Q 2之间的公共端接入所述供电信号的第一线路，所述第三开关管Q 3和所述第四开关管Q 4之间的公共端接入所述供电信号的第二线路，以及所述第一开关管Q 1与所述第四开关管Q 4之间的公共端接入所述母线电路中的高压母线，所述第二开关管Q 2与所 述第三开关管Q 3之间的公共端接入所述低压母线，其中，所述供电信号为正半波信号，所述驱动器控制所述第三开关管Q 3导通，同时，所述驱动器控制所述第四开关管Q 4截止，所述供电信号为负半波信号，所述驱动器控制所述第三开关管Q 3截止，同时，所述驱动器控制所述第四开关管Q 4导通。
在上述任一技术方案中，可选地，所述开关管为金属氧化物半导体场效应晶体管或绝缘栅双极型晶体管，其中，所述金属氧化物半导体场效应晶体管的栅极连接至控制器的指令输出端，所述金属氧化物半导体场效应晶体管的源极和漏极之间接入反向续流二极管，所述绝缘栅双极型晶体管的基极连接至控制器的指令输出端，所述绝缘栅双极型晶体管的发射极和集电极之间接入反向续流二极管。
其中，金属氧化物半导体场效应晶体管可以为耗尽型场效应晶体管或增强型场效应晶体管，也可以选择S iC晶体管或G aN晶体管。
在上述任一技术方案中，可选地，还包括：电解电容E，设于所述功率因数校正模组的输出端，所述电解电容E被配置为接收所述脉动直流信号并转换为直流信号；逆变器，连接至所述电解电容E的输出端，所述逆变器被配置为控制所述直流信号对负载供电。
在该技术方案中，通过在半桥电路100的输出端设置电解电容E，一方面，电解电容E能够提供负载运行的电量，另一方面，电解电容E也能吸收驱动控制电路中包含的浪涌信号，能够进一步地降低流向逆变器的电磁干扰信号和噪声，有利于提升负载运行的可靠性。
其中，逆变器包括两个并联的半桥电路100，可以驱动单相负载运行，逆变器包括三个并联的半桥电路100，可以驱动三相负载运行。
在上述任一技术方案中，可选地，所述电解电容E的容值取值范围为10uF～20000uF。
针对现有技术中存在的技术问题，本申请提出了一种驱动控制电路和家电设备，通过设置第一比较模组，并将第一比较模组跨接于采样电阻的两端，半桥电路直通，采样电阻的分压值大于母线基准信号，第一比较模组输出比较结果即为截止信号，不需要经过驱动器来触发开关管截止，能 够进一步地降低半桥电路直通的可能性。
本领域内的技术人员应明白，本申请的实施例可提供为方法、系统、或计算机程序产品。因此，本申请可采用完全硬件实施例、完全软件实施例、或结合软件和硬件方面的实施例的形式。而且，本申请可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器、CD-ROM、光学存储器等)上实施的计算机程序产品的形式。
本申请是参照根据本申请实施例的方法、设备(系统)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理设备的控制器以产生一个机器，使得通过计算机或其他可编程数据处理设备的控制器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理设备以特定方式工作的计算机可读存储器中，使得存储在该计算机可读存储器中的指令产生包括指令装置的制造品，该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。
这些计算机程序指令也可装载到计算机或其他可编程数据处理设备上，使得在计算机或其他可编程设备上执行一系列操作步骤以产生计算机实现的处理，从而在计算机或其他可编程设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。
应当注意的是，在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。单词“包含”不排除存在未列在权利要求中的部件或步骤。位于部件之前的单词“一”或“一个”不排除存在多个这样的部件。本申请可以借助于包括有干不同部件的硬件以及借助于适当编程的计算机来实现。在列举了干装置的单元权利要求中，这些装置中的干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。
尽管已描述了本申请的优选实施例，但本领域内的技术人员一旦得知了基 本创造性概念，可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本申请范围的所有变更和修改。
以上仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (12)

  1. 一种驱动控制电路，其中，包括：
    半桥电路，所述半桥电路接入于母线电路中，所述半桥电路被配置为对供电信号进行转换处理，所述半桥电路具体包括：
    开关管，所述开关管被配置为具有控制端；
    采样电阻，串联于所述母线电路中的低压母线中，
    第一比较模组，所述第一比较模组的第一输入端被配置为接入母线基准信号，且所述第一比较模组的第一输入端连接至所述采样电阻的第一端，所述第一比较模组的第二输入端被配置为接入所述采样电阻的第二端，
    其中，所述第一比较模组的输出端连接至所述开关管的控制端，所述采样电阻的分压值大于所述母线基准信号，所述第一比较模组向所述开关管输出截止信号。
  2. 根据权利要求1所述的驱动控制电路，其中，还包括：
    霍尔传感器，所述霍尔传感器被配置为对供电信号进行采样，以获取对应的采样信号；
    第二比较模组，所述第二比较模组的第一输入端被配置为接入基准信号，所述第二比较模组的第二输入端被配置为接入所述采样信号，
    其中，所述第二比较模组的输出端连接至所述开关管的控制端，所述采样信号的绝对值大于所述基准信号，所述第二比较模组向所述开关管输出截止信号。
  3. 根据权利要求2所述的驱动控制电路，其中，开关管的导通电压大于零，所述第二比较模组还包括：
    第一比较器，所述第一比较器的正输入端接入第一基准信号，所述第一比较器的负输入端接入所述采样信号，所述第一比较器的输出端连接至所述开关管的控制端；
    和/或，第二比较器，所述第二比较器的负输入端接入第二基准信号，所述第二比较器的正输入端接入所述采样信号，所述第二比较器的输出端 连接至所述开关管的控制端，
    其中，所述基准信号为所述第一基准信号或所述第二基准信号。
  4. 根据权利要求1所述的驱动控制电路，其中，还包括：
    单向导通元件，所述单向导通元件的第一端连接至所述开关管的控制端，所述单向导通元件的第二端连接至所述第一比较模组的输出端，
    和/或，所述单向导通元件的第二端连接至所述第二比较模组的输出端，
    其中，所述单向导通元件被配置为将所述截止信号单向传输至所述开关管的控制端。
  5. 根据权利要求2所述的驱动控制电路，其中，还包括：
    功率因数校正模组，所述功率因数校正模组包括两个并联的所述半桥电路，分别记作第一半桥电路和第二半桥电路；
    驱动器，所述驱动器连接至所述霍尔传感器的输出端，所述驱动器检测到所述供电信号大于母线电压，且所述采样信号大于或等于预设的电压阈值，且所述第二半桥电路的输入电流大于或等于预设的电流阈值，所述驱动器向所述第一半桥电路输出脉冲驱动信号，
    其中，所述脉冲驱动信号被配置为控制所述第一半桥电路中的两个开关管交替导通。
  6. 根据权利要求5所述的驱动控制电路，其中，
    所述第一半桥电路包括第一开关管和第二开关管，所述第二半桥电路包括第三开关管和第四开关管，所述第一开关管和所述第二开关管之间的公共端接入所述供电信号的第一线路，所述第三开关管和所述第四开关管之间的公共端接入所述供电信号的第二线路，
    以及所述第一开关管与所述第四开关管之间的公共端接入所述母线电路中的高压母线，所述第二开关管与所述第三开关管之间的公共端接入所述低压母线，
    其中，所述供电信号为正半波信号，所述驱动器控制所述第三开关管导通，同时，所述驱动器控制所述第四开关管截止，所述供电信号为负半波信号，所述驱动器控制所述第三开关管截止，同时，所述驱动器控制所 述第四开关管导通。
  7. 根据权利要求1至6中任一项所述的驱动控制电路，其中，
    所述开关管为金属氧化物半导体场效应晶体管或绝缘栅双极型晶体管，
    其中，所述金属氧化物半导体场效应晶体管的栅极连接至控制器的指令输出端，所述金属氧化物半导体场效应晶体管的源极和漏极之间接入反向续流二极管，所述绝缘栅双极型晶体管的基极连接至控制器的指令输出端，所述绝缘栅双极型晶体管的发射极和集电极之间接入反向续流二极管。
  8. 根据权利要求1至6中任一项所述的驱动控制电路，其中，还包括：
    电解电容，设于功率因数校正模组的输出端，所述电解电容被配置为接收脉动直流信号并转换为直流信号；
    逆变器，连接至所述电解电容的输出端，所述逆变器被配置为控制所述直流信号对负载供电。
  9. 根据权利要求8所述的驱动控制电路，其中，
    所述电解电容的容值取值范围为10uF～20000uF。
  10. 根据权利要求1至6中任一项所述的驱动控制电路，其中，还包括：
    电量检测模组，接入于所述供电信号的第二线路中，所述电量检测模组被配置为检测交流信号对负载的供电量，所述供电量用于对所述开关管的导通频率进行调整。
  11. 一种家电设备，其中，包括：
    负载；
    如权利要求1至10中任一项所述的驱动控制电路，所述动控制电路被配置控制供电信号对负载供电。
  12. 根据权利要求11所述的家电设备，其中，
    所述家电设备包括空调器、电冰箱、风扇、抽油烟机、吸尘器和电脑主机中的至少一种。
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CN118209776A (zh) * 2024-05-21 2024-06-18 西安奇点能源股份有限公司 H桥电路的过流检测电路和h桥电路的过流检测方法
CN118209776B (zh) * 2024-05-21 2024-07-23 西安奇点能源股份有限公司 H桥电路的过流检测电路和h桥电路的过流检测方法

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