WO2021000413A1 - 显示装置及其制造方法 - Google Patents

显示装置及其制造方法 Download PDF

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Publication number
WO2021000413A1
WO2021000413A1 PCT/CN2019/103509 CN2019103509W WO2021000413A1 WO 2021000413 A1 WO2021000413 A1 WO 2021000413A1 CN 2019103509 W CN2019103509 W CN 2019103509W WO 2021000413 A1 WO2021000413 A1 WO 2021000413A1
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Prior art keywords
layer
optical fiber
detector
pixel defining
fabricating
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PCT/CN2019/103509
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English (en)
French (fr)
Inventor
罗佳佳
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武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/623,087 priority Critical patent/US11158691B1/en
Publication of WO2021000413A1 publication Critical patent/WO2021000413A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technology, in particular to a display device and a manufacturing method thereof.
  • the OLED organic light-emitting diode
  • the OLED organic light-emitting diode
  • the OLED can be buried under the screen, but the hollowing will affect the life of the mobile phone screen, and the display effect will be Defects, so there has been no good development.
  • Another solution is to make the OLED into a semi-transparent area.
  • the OLED above the camera is controlled by the array to not emit light, and it can emit light during normal display. This achieves a full screen, but it also exists when the camera is turned on.
  • the display is defective, and the display effect of the translucent area on the camera and other areas will be quite different.
  • One aspect of the present invention is to provide a display device.
  • the camera is arranged below the display screen, and the optical fiber detector is arranged in the non-luminous area above the display screen.
  • the optical fiber detector is connected to the camera by arranging the optical fiber in the non-luminous area. It does not interfere with the light path of the display screen, which can realize the display effect of a full-scale mobile phone screen, and can realize the multi-angle image of the camera.
  • Another aspect of the present invention is to provide a method for manufacturing a display device.
  • the camera is arranged below the display screen, and the optical fiber detector is arranged in the non-luminous area above the display screen, and the optical fiber detector is connected to The camera, so that the light path between the camera and the display screen does not interfere, can realize the display effect of a full-scale mobile phone screen, and can realize the multi-angle image of the camera.
  • the present invention provides a display device including a display screen and a camera arranged under the display screen.
  • the display screen includes a flexible substrate layer, a thin film transistor substrate, a pixel definition layer, and a light-emitting layer that are laminated.
  • the thin film transistor substrate is disposed on the flexible substrate layer;
  • the pixel defining layer is disposed on the thin film transistor substrate, and the pixel defining layer has a pixel defining structure and is surrounded by the pixel defining structure.
  • the pixel defining groove; the light-emitting layer is disposed in the pixel defining groove.
  • the camera includes a detector, an optical fiber probe, and an optical fiber for connecting the two.
  • the detector is located under the flexible substrate layer, and the detector corresponds to the light-emitting layer;
  • the optical fiber detector is provided on the upper surface of the pixel defining structure for receiving optical signals;
  • the optical fiber is arranged opposite to the pixel defining structure, and penetrates the display screen to connect the detector and the optical fiber detector to realize optical signal transmission.
  • the display screen further includes a through hole penetrating the display screen, the through hole corresponds to the pixel defining structure, and the optical fiber is provided in the through hole.
  • the material of the flexible substrate layer includes a polyimide layer.
  • the thin film transistor substrate includes a flexible base, a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source and drain layer, a flat layer, and an anode layer that are stacked and arranged.
  • anode layer is electrically connected to the light-emitting layer.
  • the material of the active layer includes low temperature polysilicon.
  • the present invention also provides a manufacturing method of a display device, including the following steps:
  • the display screen is manufactured by providing a flexible substrate layer, and sequentially fabricating a thin film transistor substrate, a pixel defining layer, and a light emitting layer on the flexible substrate layer; wherein a pixel defining structure is formed on the pixel defining layer and the pixel A pixel defining groove formed around the defining structure; the light-emitting layer is disposed in the pixel defining groove; and
  • a camera includes a detector, an optical fiber detector, and an optical fiber; wherein the detector is arranged under the flexible substrate layer and corresponds to the light-emitting layer, and the optical fiber detector is arranged on the pixel definition layer , The optical fiber passes through the display screen to connect the detector and the optical fiber detector.
  • the manufacturing method of the display device further includes: making a through hole, disposing the through hole on the display screen, the through hole corresponding to the pixel defining structure of the pixel defining layer; Inside the through hole.
  • step of making and setting the camera includes:
  • the optical fiber is arranged, the length of the optical fiber is greater than the thickness of the display screen, and the optical fiber is passed through the through hole to connect the detector and the optical fiber detector.
  • the step of manufacturing a thin film transistor substrate includes:
  • An active layer is fabricated, the active layer is fabricated on the buffer layer, the material of the active layer includes low-temperature polysilicon, and the active layer is doped to form a source region and a drain on the active layer area;
  • fabricating the source drain layer on the gate layer the source drain layer including a source electrode and a drain electrode;
  • An anode layer is fabricated, an anode layer is fabricated on the flat layer, the anode layer and the active layer are correspondingly arranged and electrically connected, wherein the anode layer is connected to the light-emitting layer.
  • the beneficial effect of the present invention is that the present invention provides a display device and a manufacturing method.
  • the camera is arranged under the display screen, and the optical fiber detector is arranged at the pixel defining structure in the non-luminous area above the display screen.
  • the optical fiber connects the optical fiber detector to the camera, so that the optical path between the camera and the display screen does not interfere, which can realize the display effect of a full-scale mobile phone screen, and can realize the multi-angle image of the camera camera.
  • FIG. 1 is a schematic structural diagram of a display device in an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the structure of the thin film transistor substrate in FIG. 1;
  • FIG. 3 is a schematic diagram of the structure of the thin film transistor substrate and the pixel definition layer in FIG. 1;
  • Figure 5 is a production flow chart of the steps of making the display screen described in Figure 4.
  • Fig. 6 is a production flow chart of the steps of setting the camera described in Fig. 4;
  • FIG. 7 is a manufacturing flow chart of the steps of manufacturing the thin film transistor substrate described in FIG. 5.
  • Display device 10, display screen, 20, camera,
  • Pixel defining structure 32. Pixel defining groove.
  • the "above” or “below” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or it simply means that the level of the first feature is higher than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the present invention provides a display device 100 including a display screen 10 and a camera 20 arranged under the display screen 10.
  • the display screen 10 includes a flexible substrate layer 1, a thin film transistor substrate 2, a pixel definition layer 3 and a light-emitting layer 4 which are laminated.
  • the thin film transistor substrate 2 is disposed on the flexible substrate layer 1;
  • the pixel defining layer 3 is disposed on the thin film transistor substrate 2, and
  • the pixel defining layer 3 has a pixel defining structure 31 and
  • the pixel defining groove 32 is formed around the pixel defining structure 31; the light-emitting layer 4 is disposed in the pixel defining groove 32.
  • the camera 20 includes a detector 5, an optical fiber detector 6 and an optical fiber 7 for connecting the two.
  • the detector 5 is located under the flexible substrate layer 1, and the detector 5 corresponds to the light-emitting layer 4; the optical fiber detector 6 is provided on the pixel defining structure 31 for receiving Optical signal (arrow shown in Fig. 1);
  • the optical fiber 7 penetrates the display screen 10 for connecting the detector 5 and the optical fiber detector 6 to realize optical signal transmission.
  • the area corresponding to the light-emitting layer 4 in the display screen 10 is a light-emitting area
  • the light-emitting layer 4 emits light as a light source
  • the area corresponding to the pixel defining structure 31 is a non-light-emitting area.
  • the camera 20 can be arranged under the display screen 10, and preferably, the detector 5 of the camera 20 is arranged under the display screen 10 at a position corresponding to the light-emitting area.
  • the optical fiber detector 6 is arranged at the pixel defining structure 31 in the non-luminous area above the display screen 10, and the optical fiber 7 is arranged in the non-luminous area to connect the optical fiber detector 6 to the camera 20, so that the optical path between the camera 20 and the display screen 10 is different. Interference can realize the display effect of a full-scale mobile phone screen, and can realize multi-angle images of the camera 20. And because the fiber optic detector 6 is arranged on the full screen, the display effect on the full screen is realized, and the full screen shooting and multi-angle full screen shooting can be realized at the same time, and the 180° full-angle shooting effect can be realized.
  • the display screen 10 further includes a through hole 8 passing through the display screen 10, and the through hole 8 corresponds to the pixel defining structure 31. More specifically, the through hole 8 is formed at the pixel defining structure 31 and penetrates the display screen 10 up and down, and the optical fiber 7 is provided in the through hole 8.
  • the material of the flexible substrate layer 1 includes a polyimide layer.
  • the thin film transistor substrate 2 includes a flexible base 21, a buffer layer 22, an active layer 23, a gate insulating layer 24, a gate layer 25, and an interlayer insulation layered together.
  • FIG. 3 is a schematic structural diagram of the positional relationship between the thin film transistor substrate 2 and the pixel definition layer 3 of this embodiment.
  • the anode layer 29 is located at the bottom of the pixel defining groove 32, and the anode layer 29 is electrically connected to the light-emitting layer 4.
  • the material of the active layer 23 includes low temperature polysilicon.
  • the active layer 23 includes a source region and a drain region; the source and drain layer 27 includes a source and a drain.
  • the present invention also provides a manufacturing method of the display device 100, including the following steps S1-S2.
  • Step S1 Fabricate the display screen 10, which is to provide a flexible substrate layer 1 and fabricate a thin film transistor substrate 2, a pixel definition layer 3, and a light emitting layer 4 on the flexible substrate layer 1 in sequence.
  • the thin film transistor substrate 2 is disposed on the flexible substrate layer 1;
  • the pixel defining layer 3 is disposed on the thin film transistor substrate 2;
  • the pixel defining layer 3 is formed with a pixel defining structure 31 and
  • the pixel defining groove 32 is formed around the pixel defining structure 31; the light-emitting layer 4 is disposed in the pixel defining groove 32.
  • Step S2 Set up a camera 20, the camera 20 includes a detector 5, an optical fiber detector 6 and an optical fiber 7 for connecting the two, wherein the detector 5 is arranged under the flexible substrate layer 1 and corresponds to the The light-emitting layer 4, the optical fiber detector 5 is provided on the pixel definition layer 3, and the optical fiber 7 passes through the display screen 10 to connect the detector 5 and the optical fiber detector 6.
  • the manufacturing method of the display screen 10 further includes the steps of: making a through hole 8 and disposing the through hole 8 on the display screen 10, the through hole 8 corresponding to the pixel defining structure 31 Specifically, a through hole 8 is provided on the flexible substrate 21, the thin film transistor substrate 2, and the pixel defining structure 31 of the pixel defining layer 3, and the through hole 8 penetrates the display screen up and down 10.
  • the optical fiber 7 is arranged in the through hole 8.
  • the step S1 of making the display screen 10 specifically includes:
  • Step S11 providing the flexible substrate
  • Step S12 fabricate the thin film transistor substrate 2, and fabricate the thin film transistor substrate 2 on the flexible substrate;
  • Step S13 fabricating the pixel defining layer 3, fabricating the pixel defining layer 3 on the thin film transistor substrate 2, the pixel defining layer 3 having a pixel defining structure 31 and a pixel surrounded by the pixel defining structure 31 Limit slot 32;
  • Step S14 fabricate the light-emitting layer 4, and fabricate the light-emitting layer 4 in the pixel defining groove 32.
  • the step S2 of making and setting the camera 20 includes:
  • Step S21 setting the detector 5, and setting the detector 5 under the flexible substrate layer 1;
  • Step S22 Set up the optical fiber detector 6, and set the optical fiber detector 6 on the pixel limiting structure 31;
  • Step S23 Set the optical fiber 7, the length of the optical fiber 7 is greater than the thickness of the display screen 10, and pass the optical fiber 7 through the through hole 8 to connect the detector 5 and the optical fiber detector 6 .
  • the step S12 of manufacturing the thin film transistor substrate 2 includes:
  • Step S121 Provide a flexible substrate 21;
  • Step S122 fabricate a buffer layer 22, and fabricate the buffer layer 22 on the flexible substrate 21;
  • Step S123 fabricate an active layer 23, fabricate the active layer 23 on the buffer layer 22, the material of the active layer 23 includes low-temperature polysilicon, and dope the active layer 23 to form the active layer A source region and a drain region are formed on 23;
  • Step S124 fabricate a gate insulating layer 24, and fabricate the gate insulating layer 24 on the active layer 23;
  • Step S125 fabricate a gate layer 25, and fabricate the gate layer 25 on the gate insulating layer 24;
  • Step S126 fabricate an interlayer insulating layer 26, and fabricate the interlayer insulating layer 26 on the gate layer 25;
  • Step S127 forming a source and drain layer 27, forming the source and drain layer 27 on the gate layer 25, the source and drain layer 27 includes a source electrode and a drain electrode;
  • Step S128 fabricate a flat layer 28, and fabricate the flat layer 28 on the source and drain layer 27;
  • Step S129 fabricate an anode layer 29, fabricate the anode layer 29 on the flat layer 28, the anode layer 29 and the active layer 23 are correspondingly arranged and electrically connected, wherein the anode layer 29 and the light-emitting Layer 4 is connected.
  • the beneficial effect of the present invention is that the present invention provides a display device and a manufacturing method.
  • the camera is arranged under the display screen, and the optical fiber detector is arranged at the pixel defining structure in the non-luminous area above the display screen.
  • the optical fiber connects the optical fiber detector to the camera, so that the optical path between the camera and the display screen does not interfere, which can realize the display effect of a full-scale mobile phone screen, and can realize the multi-angle image of the camera camera.
  • the full screen is used to arrange the fiber detector, the display effect on the full screen is realized, and the full screen camera, multi-angle full screen camera can be realized at the same time, and the effect of 180° full angle camera can be realized.

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Abstract

一种显示装置（100）及其制造方法。显示装置（100）包括显示屏（10）和设于显示屏（10）下方的照相机（20）。显示屏（10）包括层叠设置的柔性衬底层（1）、薄膜晶体管基板（2）、像素定义层（3）和发光层（4）。照相机（20）包括检测器（5）、光纤探测器（6）和用于连接二者的光纤（7）。显示装置（100）的制作方法包括步骤：制作显示屏（10）、制作通孔（8）、设置照相机（20）。

Description

显示装置及其制造方法 技术领域
本发明涉及显示技术领域，尤其涉及一种显示装置及其制造方法。
 背景技术
提高手机显示屏的屏占比是目前各大手机厂商以及面板厂商努力攻克的难题，由于前置摄像头的存在，绝对意义的全面屏一直难以实现。
目前对于屏下摄像头（CUP）的设计方案，通过对有机发光二极管（OLED）进行挖空的方法，能够实现摄像头埋在屏下，但是由于挖空会影响手机屏的寿命，同时显示效果会有缺陷，因此一直并没有良好的发展。另一种方案是将OLED做成半透明的区域，在摄像头打开时，通过阵列控制摄像头上方的OLED不发光，而在正常显示时候可以发光，这样实现全面屏，但是其同样存在打开摄像头时候屏幕显示有缺陷，同时摄像头上面的半透明区域与其他区域的显示效果会有较大的差异。
因此，有必要开发一种新型的显示屏，来克服现有技术中的缺陷。
 技术问题
本发明的一个方面在于提供一种显示装置，将摄像头设在显示屏下方，在显示屏上方非发光区设置光纤探测器，通过在非发光区内设置光纤将光纤探测器连接到照相机，这样摄像头和显示屏的光路不干扰，能够实现全面手机屏的显示效果，同时能够实现摄像头的多角度影像。
本发明的另一个方面在于提供一种显示装置的制造方法，将摄像头设在显示屏下方，在显示屏上方非发光区设置光纤探测器，通过在非发光区内设置光纤将光纤探测器连接到照相机，这样摄像头和显示屏的光路不干扰，能够实现全面手机屏的显示效果，同时能够实现摄像头的多角度影像。
 技术解决方案
为了实现上述目的，本发明提供一种显示装置，包括显示屏和设于所述显示屏下方的照相机。
所述显示屏包括层叠设置的柔性衬底层、薄膜晶体管基板、像素定义层和发光层。具体地讲，所述薄膜晶体管基板设置于所述柔性衬底层上；所述像素定义层设置于所述薄膜晶体管基板上，所述像素定义层具有像素限定结构及由所述像素限定结构围绕形成的像素限定槽；所述发光层设置于所述像素限定槽内。
所述照相机包括检测器、光纤探测器和用于连接二者的光纤。具体地讲，所述检测器位于所述柔性衬底层下方，所述检测器对应于所述发光层；所述光纤探测器设于所述像素限定结构上表面，用于接收光信号；所述光纤与所述像素限定结构相对设置，贯穿所述显示屏用于连接所述检测器和所述光纤探测器实现光信号传输。
进一步的，所述显示屏还包括贯穿所述显示屏的通孔，所述通孔对应于所述像素限定结构，所述光纤设于所述通孔内。
进一步的，所述柔性衬底层的材料包括聚酰亚胺层。
进一步的，所述薄膜晶体管基板包括层叠设置的柔性基底、缓冲层、有源层、栅极绝缘层、栅极层、层间绝缘层、源漏极层、平坦层和阳极层。
进一步的，所述阳极层与所述发光层电相连。
进一步的，所述有源层的材料包括低温多晶硅。
本发明还提供一种显示装置的制作方法，包括以下步骤：
制作显示屏，其为提供一柔性衬底层，并在所述柔性衬底层上依次制作薄膜晶体管基板、像素定义层以及发光层；其中在所述像素定义层形成有像素限定结构及由所述像素限定结构围绕形成的像素限定槽；所述发光层设置于所述像素限定槽内；以及
设置照相机，所述照相机包括检测器、光纤探测器和光纤；其中所述检测器设置于所述柔性衬底层下方且对应于所述发光层，所述光纤探测器设于所述像素定义层上，所述光纤穿过所述显示屏以连接所述检测器与所述光纤探测器。
进一步的，所述显示装置的制作方法还包括：制作通孔，在所述显示屏上设置所述通孔, 所述通孔对应于所述像素定义层的像素限定结构；所述光纤设于所述通孔内。
进一步的，所述制作设置照相机的步骤包括：
设置所述检测器，在所述柔性衬底层下方设置所述检测器；
设置所述光纤探测器，将所述光纤探测器设于所述像素限定结构上；以及
设置所述光纤，所述光纤的长度大于所述显示屏的厚度，将所述光纤穿过所述通孔以连接所述检测器与所述光纤探测器。
进一步的，所述制作薄膜晶体管基板的步骤包括：
提供一柔性基底；
制作缓冲层，在所述柔性基底上制作所述缓冲层；
制作有源层，在所述缓冲层上制作所述有源层，所述有源层的材料包括低温多晶硅，并对有源层进行掺杂以在有源层上形成源极区域和漏极区域；
制作栅极绝缘层，在所述有源层上制作所述栅极绝缘层；
制作栅极层，在所述栅极绝缘层上制作所述栅极层；
制作层间绝缘层，在所述栅极层上制作所述层间绝缘层；
制作源漏极层，在所述栅极层上制作所述源漏极层，所述源漏极层包括源极和漏极；
制作平坦层，在所述源漏极层上制作所述平坦层；
制作阳极层，在平坦层上制作阳极层，所述阳极层与所述有源层相应设置且电连接，其中所述阳极层与所述发光层相连。
 有益效果
本发明的有益效果在于，本发明提出一种显示装置及制造方法，将照相机设在显示屏下方，在显示屏上方非发光区的像素限定结构处设置光纤探测器，通过在非发光区内设置光纤将光纤探测器连接到照相机，这样照相机和显示屏的光路不干扰，能够实现全面手机屏的显示效果，同时能够实现照相机摄像头的多角度影像。
 附图说明
图1是本发明实施例中的显示装置的结构示意图；
图2是图1中所述薄膜晶体管基板的结构示意图；
图3是图1中所述薄膜晶体管基板以及所述像素定义层的结构示意图；
图4是本发明实施例中的显示装置的制作流程图；
图5是图4中所述制作显示屏步骤的制作流程图；
图6是图4中所述设置照相机步骤的制作流程图；
图7是图5中所述制作薄膜晶体管基板步骤的制作流程图。
图中部件标识如下：
100、显示装置，10、显示屏，20、照相机，
1、柔性衬底层，2、薄膜晶体管基板，3、像素定义层，4、发光层，
5、检测器，6、光纤探测器，7、光纤，8、通孔，21、柔性基底，
22、缓冲层，23、有源层，24、栅极绝缘层，25、栅极层，
26、层间绝缘层，27、源漏极层，28、平坦层，29、阳极层，
31、像素限定结构，32、像素限定槽。
 本发明的实施方式
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本发明的描述中，还需要说明的是，除非另有明确的规定和限定，术语“设置”、“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
请参阅图1所示，本发明提供一种显示装置100，包括显示屏10和设于所述显示屏10下方的照相机20。
其中，所述显示屏10包括层叠设置的柔性衬底层1、薄膜晶体管基板2、像素定义层3和发光层4。具体地讲，所述薄膜晶体管基板2设置于所述柔性衬底层1上；所述像素定义层3设置于所述薄膜晶体管基板2上，所述像素定义层3具有像素限定结构31及由所述像素限定结构31围绕形成的像素限定槽32；所述发光层4设置于所述像素限定槽32内。
其中，所述照相机20包括检测器5、光纤探测器6和用于连接二者的光纤7。具体地讲，所述检测器5位于所述柔性衬底层1下方，所述检测器5对应于所述发光层4；所述光纤探测器6设于所述像素限定结构31上，用于接收光信号（图1所示的箭头）；所述光纤7贯穿所述显示屏10用于连接所述检测器5和所述光纤探测器6实现光信号传输。
可以理解的是，在显示屏10中与所述发光层4相对应的区域为发光区，所述发光层4发出光作为光源，与所述像素限定结构31相对应的区域为非发光区。本发明可将照相机20设在显示屏10下方，优选照相机20的所述检测器5设在显示屏10下方与所述发光区相对应的位置上。并通过在显示屏10上方非发光区的像素限定结构31处设置光纤探测器6，在非发光区内设置光纤7将光纤探测器6连接到照相机20，这样照相机20和显示屏10的光路不干扰，能够实现全面手机屏的显示效果，同时能够实现照相机20摄像头的多角度影像。并且由于采用全面屏布设光纤探测器6，这样实现在全面屏的显示效果，同时实现全屏摄像，多角度全屏摄像，可实现180°全角度摄像的效果。
在本实施例中，所述显示屏10还包括贯穿所述显示屏10的通孔8，且所述通孔8对应于所述像素限定结构31。更具体地讲，所述通孔8形成于所述像素限定结构31处，并上下贯穿所述显示屏10，所述光纤7设于所述通孔8内。
在本实施例中，所述柔性衬底层1的材料包括聚酰亚胺层。
请参阅图2所示，在本实施例中，所述薄膜晶体管基板2包括层叠设置的柔性基底21、缓冲层22、有源层23、栅极绝缘层24、栅极层25、层间绝缘层26、源漏极层27、平坦层28和阳极层29。
请参阅图3所示，图3为本实施例所述薄膜晶体管基板2与所述像素定义层3的位置关系结构示意图。所述阳极层29位于所述像素限定槽32的槽底，所述阳极层29与所述发光层4电连接。
在本实施例中，所述有源层23的材料包括低温多晶硅。其中，所述有源层23包括源极区域和漏极区域；所述源漏极层27包括源极和漏极。
请参阅图4所示，本发明还提供一种显示装置100的制作方法，包括以下步骤S1-S2。
步骤S1：制作显示屏10，其为提供一柔性衬底层1，并在所述柔性衬底层1上依次制作薄膜晶体管基板2、像素定义层3以及发光层4。具体地，所述薄膜晶体管基板2设置于所述柔性衬底层1上；所述像素定义层3设置于所述薄膜晶体管基板2上；所述像素定义层3形成有像素限定结构31及由所述像素限定结构31围绕形成的像素限定槽32；所述发光层4设置于所述像素限定槽32内。
步骤S2：设置照相机20，所述照相机20包括检测器5、光纤探测器6和用于连接二者的光纤7，其中所述检测器5设置于所述柔性衬底层1下方且对应于所述发光层4，所述光纤探测器5设于所述像素定义层3上，所述光纤7穿过所述显示屏10以连接所述检测器5与所述光纤探测器6。
在本实施例中，所述显示屏10的制作方法还包括步骤：制作通孔8，在所述显示屏10上设置所述通孔8，所述通孔8对应于所述像素限定结构31，具体地讲，在所述柔性基底21、所述薄膜晶体管基板2、以及所述像素定义层3的所述像素限定结构31上设置通孔8，所述通孔8上下贯穿所述显示屏10。所述光纤7设于所述通孔8内。
请参阅图5所示，在本实施例中，所述制作显示屏10的步骤S1具体包括：
步骤S11：提供所述柔性衬底；
步骤S12：制作所述薄膜晶体管基板2，在所述柔性衬底上制作所述薄膜晶体管基板2；
步骤S13：制作所述像素定义层3，在所述薄膜晶体管基板2上制作所述像素定义层3，所述像素定义层3具有像素限定结构31及由所述像素限定结构31围绕形成的像素限定槽32；
步骤S14：制作所述发光层4，在所述像素限定槽32内制作所述发光层4。
请参阅图6所示，在本实施例中，所述制作设置照相机20的步骤S2包括：
步骤S21：设置所述检测器5，在所述柔性衬底层1下方设置所述检测器5；
步骤S22：设置所述光纤探测器6，将所述光纤探测器6设于所述像素限定结构31上；以及
步骤S23：设置所述光纤7，所述光纤7的长度大于所述显示屏10的厚度，将所述光纤7穿过所述通孔8以连接所述检测器5与所述光纤探测器6。
请参阅图7所示，在本实施例中，所述制作薄膜晶体管基板2的步骤S12包括：
步骤S121：提供一柔性基底21；
步骤S122：制作缓冲层22，在所述柔性基底21上制作所述缓冲层22；
步骤S123：制作有源层23，在所述缓冲层22上制作所述有源层23，所述有源层23的材料包括低温多晶硅，并对有源层23进行掺杂以在有源层23上形成源极区域和漏极区域；
步骤S124：制作栅极绝缘层24，在所述有源层23上制作所述栅极绝缘层24；
步骤S125：制作栅极层25，在所述栅极绝缘层24上制作所述栅极层25；
步骤S126：制作层间绝缘层26，在所述栅极层25上制作所述层间绝缘层26；
步骤S127：制作源漏极层27，在所述栅极层25上制作所述源漏极层27，所述源漏极层27包括源极和漏极；
步骤S128：制作平坦层28，在所述源漏极层27上制作所述平坦层28；
步骤S129：制作阳极层29，在所述平坦层28上制作所述阳极层29，所述阳极层29与所述有源层23相应设置且电连接，其中所述阳极层29与所述发光层4相连。
本发明的有益效果在于，本发明提出一种显示装置及制造方法，将照相机设在显示屏下方，在显示屏上方非发光区的像素限定结构处设置光纤探测器，通过在非发光区内设置光纤将光纤探测器连接到照相机，这样照相机和显示屏的光路不干扰，能够实现全面手机屏的显示效果，同时能够实现照相机摄像头的多角度影像。并且由于采用全面屏布设光纤探测器，这样实现在全面屏的显示效果，同时实现全屏摄像，多角度全屏摄像，可实现180°全角度摄像的效果。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种显示装置，包括显示屏和照相机；
    其中，所述显示屏包括：
    柔性衬底层；
    薄膜晶体管基板，设置于所述柔性衬底层上；
    像素定义层，设置于所述薄膜晶体管基板上，所述像素定义层具有像素限定结构及由所述像素限定结构围绕形成的像素限定槽；以及
    发光层，设置于所述像素限定槽内；
    所述照相机包括：
    检测器，位于所述柔性衬底层下方，所述检测器对应于所述发光层；
    光纤探测器，设于所述像素限定结构上，用于接收光信号；以及
    光纤，贯穿所述显示屏用于连接所述检测器和所述光纤探测器实现光信号传输。
  2. 根据权利要求1所述的显示装置，其中，所述显示屏还包括贯穿所述显示屏的通孔，所述通孔对应于所述像素限定结构，所述光纤设于所述通孔内。
  3. 根据权利要求1所述的显示装置，其中，所述柔性衬底层的材料包括聚酰亚胺层。
  4. 根据权利要求1所述的显示装置，其中，所述薄膜晶体管基板包括层叠设置的柔性基底、缓冲层、有源层、栅极绝缘层、栅极层、层间绝缘层、源漏极层、平坦层和阳极层。
  5. 根据权利要求4所述的显示装置，其中，所述阳极层与所述发光层电相连。
  6. 根据权利要求4所述的显示装置，其中，所述有源层的材料包括低温多晶硅。
  7. 一种显示装置的制作方法，其中，包括步骤：
    制作显示屏，其为提供一柔性衬底层，并在所述柔性衬底层上依次制作薄膜晶体管基板、像素定义层以及发光层；其中在所述像素定义层形成有像素限定结构及由所述像素限定结构围绕形成的像素限定槽；所述发光层设置于所述像素限定槽内；以及
    设置照相机，所述照相机包括检测器、光纤探测器和光纤；其中所述检测器设置于所述柔性衬底层下方且对应于所述发光层，所述光纤探测器设于所述像素定义层上，所述光纤穿过所述显示屏以连接所述检测器与所述光纤探测器。
  8. 根据权利要求7所述的制作方法，其中，还包括步骤：
    制作通孔，在所述显示屏上设置所述通孔, 所述通孔对应于所述像素定义层的像素限定结构；所述光纤设于所述通孔内。
  9. 根据权利要求8所述的制作方法，其中，所述设置照相机的步骤包括：
    设置所述检测器，在所述柔性衬底层下方设置所述检测器；
    设置所述光纤探测器，将所述光纤探测器设于所述像素限定结构上；以及
    设置所述光纤，所述光纤的长度大于所述显示屏的厚度，将所述光纤穿过所述通孔以连接所述检测器与所述光纤探测器。
  10. 根据权利要求8所述的制作方法，其中，所述制作薄膜晶体管基板的步骤包括：
    提供一柔性基底；
    制作缓冲层，在所述柔性基底上制作所述缓冲层；
    制作有源层，在所述缓冲层上制作所述有源层，所述有源层的材料包括低温多晶硅，并对所述有源层进行掺杂以在有源层上形成源极区域和漏极区域；
    制作栅极绝缘层，在所述有源层上制作所述栅极绝缘层；
    制作栅极层，在所述栅极绝缘层上制作所述栅极层；
    制作层间绝缘层，在所述栅极层上制作所述层间绝缘层；
    制作源漏极层，在所述栅极层上制作所述源漏极层，所述源漏极层包括源极和漏极；
    制作平坦层，在所述源漏极层上制作所述平坦层；
    制作阳极层，在所述平坦层上制作所述阳极层，所述阳极层与所述有源层相应设置且电连接，其中所述阳极层与所述发光层相连。
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