WO2020258458A1 - Oled 显示面板 - Google Patents
Oled 显示面板 Download PDFInfo
- Publication number
- WO2020258458A1 WO2020258458A1 PCT/CN2019/100547 CN2019100547W WO2020258458A1 WO 2020258458 A1 WO2020258458 A1 WO 2020258458A1 CN 2019100547 W CN2019100547 W CN 2019100547W WO 2020258458 A1 WO2020258458 A1 WO 2020258458A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- organic flat
- disposed
- area
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- This application relates to the field of display technology, in particular to an OLED display panel.
- the bendable display is leading a new display technology revolution with the product releases of companies such as Royole and Samsung.
- the central area of the bend is the area where the stress is most concentrated.
- the film layer is often broken and the device fails due to stress.
- the purpose of the embodiments of the present application is to provide an OLED display panel, which can solve the existing technical problem of device failure due to film layer fracture due to stress.
- An embodiment of the application provides an OLED display panel, including:
- a flexible substrate layer includes a bending area and a non-bending area connected at both ends of the bending area, the bending area includes a first area and two second areas located on opposite sides of the first area In the second area, the bending stress of the first area is greater than the bending stress of the second area;
- a driving circuit layer which is disposed on the second area and the non-bending area
- the organic flat portion includes a first organic flat layer and a second organic flat layer, the first organic flat layer is disposed in the first area, and the second organic flat layer is disposed in the driving circuit layer and the On the first organic flat layer;
- a light-emitting layer which is disposed on the second organic flat layer and located above the bending area and the non-bending area;
- the width of the first region is greater than or equal to the width of one pixel of the light-emitting layer.
- the driving circuit layer includes a first part for driving the light-emitting layer above the non-bending area and a second part for driving the light-emitting layer above the bending area. One part is electrically connected to the second part.
- the driving circuit layer includes a third metal layer disposed on the flexible substrate layer, and each of the third metal layers forms a plurality of source metals and drain metals. .
- the driving circuit layer further includes:
- the first insulating layer is disposed on the flexible substrate layer
- a layer of semiconductor material which is disposed on the first insulating layer
- a second insulating layer disposed on the first insulating layer and the semiconductor material layer;
- a first gate layer which is disposed on the second insulating layer and directly above the semiconductor material layer;
- a third insulating layer disposed on the first gate layer and the second insulating layer
- a second gate layer which is disposed on the third insulating layer and directly above the second gate layer;
- a first interlayer dielectric layer which is disposed on the second gate layer and the third insulating layer;
- the second interlayer dielectric layer is disposed on the first interlayer dielectric layer, and the third metal layer is disposed on the second interlayer dielectric layer.
- the light-emitting layer includes:
- An anode metal layer which is disposed on the second organic flat layer
- An organic light emitting layer which is disposed on the anode metal layer;
- the cathode layer is arranged on the organic light-emitting layer.
- the first area is further provided with a first connecting metal for connecting with the drain metal above the first area, and the organic flat portion covers the On the third metal layer, the first connecting metal, and the first area;
- the organic flat portion is provided with a first conductive hole for electrically connecting the first connecting metal and the light-emitting layer.
- the anode metal layer extends from the second organic flat layer above the first part to the second organic flat layer on the second part; the second organic flat layer is provided with The anode metal layer and the second conductive hole electrically connected to the drain metal.
- the first organic flat layer and the second organic flat layer are respectively formed by one-time deposition.
- a second connecting metal connected to the drain metal above the first area is further provided between the first organic flat layer and the second organic flat layer.
- the second organic flat layer is provided with a third conductive hole for connecting the second connecting metal and the anode metal layer.
- the anode metal layer extends from the second organic flat layer above the first part to the second organic flat layer on the second part; the second organic flat layer is provided with a connection for connecting The drain metal and the fourth conductive hole of the anode metal layer.
- the embodiment of the present application also provides an OLED display panel, including:
- a flexible substrate layer includes a bending area and a non-bending area connected at both ends of the bending area, the bending area includes a first area and two second areas located on opposite sides of the first area In the second area, the bending stress of the first area is greater than the bending stress of the second area;
- a driving circuit layer which is disposed on the second area and the non-bending area
- the organic flat portion includes a first organic flat layer and a second organic flat layer, the first organic flat layer is disposed in the first area, and the second organic flat layer is disposed in the driving circuit layer and the On the first organic flat layer;
- the light-emitting layer is arranged on the second organic flat layer and located above the bending area and the non-bending area.
- the driving circuit layer includes a first part for driving the light-emitting layer above the non-bending area and a second part for driving the light-emitting layer above the bending area. One part is electrically connected to the second part.
- the driving circuit layer includes a third metal layer disposed on the flexible substrate layer, and each of the third metal layers forms a plurality of source metals and drain metals. .
- the driving circuit layer further includes:
- the first insulating layer is disposed on the flexible substrate layer
- a layer of semiconductor material which is disposed on the first insulating layer
- a second insulating layer disposed on the first insulating layer and the semiconductor material layer;
- a first gate layer which is disposed on the second insulating layer and directly above the semiconductor material layer;
- a third insulating layer disposed on the first gate layer and the second insulating layer
- a second gate layer which is disposed on the third insulating layer and directly above the second gate layer;
- a first interlayer dielectric layer which is disposed on the second gate layer and the third insulating layer;
- the second interlayer dielectric layer is disposed on the first interlayer dielectric layer, and the third metal layer is disposed on the second interlayer dielectric layer.
- the light-emitting layer includes:
- An anode metal layer which is disposed on the second organic flat layer
- An organic light emitting layer which is disposed on the anode metal layer;
- a cathode layer which is disposed on the organic light-emitting layer
- the insulating layer is arranged on the cathode layer.
- the first organic flat layer and the second organic flat layer are an integrated structure formed by one deposition.
- the first area is further provided with a first connecting metal for connecting with the drain metal above the first area, and the organic flat portion covers the On the third metal layer, the first connecting metal, and the first area;
- the organic flat portion is provided with a first conductive hole for electrically connecting the first connecting metal and the light-emitting layer.
- the anode metal layer extends from the second organic flat layer above the first part to the second organic flat layer on the second part; the second organic flat layer is provided with The anode metal layer and the second conductive hole electrically connected to the drain metal.
- the first organic flat layer and the second organic flat layer are respectively formed by one-time deposition.
- a second connecting metal connected to the drain metal above the first area is further provided between the first organic flat layer and the second organic flat layer.
- the second organic flat layer is provided with a third conductive hole for connecting the second connecting metal and the anode metal layer.
- the anode metal layer extends from the second organic flat layer above the first part to the second organic flat layer on the second part; the second organic flat layer is provided for connection The drain metal and the fourth conductive hole of the anode metal layer.
- the circuit in the area with greater stress in the bending area is transferred to the area with less stress on both sides, and the first area with greater stress is set as an organic flat layer.
- the bending performance of the OLED display panel can avoid device failure caused by film layer fracture, thereby improving circuit stability.
- FIG. 1 is a schematic structural diagram of an OLED display panel provided by an embodiment of the application.
- FIG. 2 is a first partial cross-sectional view of an OLED display panel provided by an embodiment of the application
- FIG. 3 is a second partial cross-sectional view of an OLED display panel provided by an embodiment of the application.
- FIG. 4 is a third partial cross-sectional view of an OLED display panel provided by an embodiment of the application.
- FIG. 5 is a fourth partial cross-sectional view of an OLED display panel provided by an embodiment of the application.
- first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of this application, “multiple” means two or more than two, unless otherwise specifically defined.
- FIG. 1 is a schematic structural diagram of an OLED display panel provided by an embodiment of the application.
- FIG. 2 is a first partial cross-sectional view of an OLED display panel provided by an embodiment of the application.
- the OLED display panel includes: a flexible substrate layer 10, a driving circuit layer 300, an organic flat portion 70, and a light emitting layer 200.
- the flexible substrate layer 10 is made of PI material, which has good bending performance. Of course, other materials can also be used.
- the driving circuit layer 300 is disposed on the flexible substrate layer.
- the organic flat portion 70 is disposed on the driving circuit layer 300 and the flexible substrate layer.
- the light-emitting layer 200 is disposed on the organic flat portion 70.
- the flexible substrate layer 10 includes a bending area 13 and a non-bending area 11 connected to both ends of the bending area 13.
- the bending area 13 includes a first area 132 and two opposite sides of the first area 132.
- the bending stress of the first area 132 is greater than the bending stress of the second area 131.
- the light-emitting layer 200 is disposed in the non-bending area 11.
- the flexible substrate layer 10 realizes the relative bending of the two non-bending areas 11 through the bending area 13, thereby achieving folding or a certain angle of included angle.
- the width of the first region 132 is greater than or equal to the width of one pixel of the light-emitting layer. It can be one pixel width or multiple pixel widths.
- the driving circuit layer 300 includes a first portion 301 for driving the light-emitting layer 200 above the non-bending area 11 and a second portion 302 for driving the light-emitting layer 200 above the bending area 13, the first portion 301 and the The second part 302 is electrically connected.
- the driving circuit layer 300 includes a first insulating layer 20, a second insulating layer 30, a third insulating layer 40, a first interlayer dielectric layer 50, a second interlayer dielectric layer 60, a semiconductor material layer 110, The first gate layer 110a, the second gate layer 110b, and the third metal layer 120.
- the first insulating layer 20 is formed by deposition of insulating materials such as silicon nitride or silicon dioxide, and is disposed on the flexible substrate layer; the semiconductor material layer 110 is disposed on the first insulating layer 20, and the channel is formed by a doping process;
- the second insulating layer 30 is formed by deposition of insulating materials such as silicon nitride or silicon dioxide, and is disposed on the first insulating layer and the semiconductor material layer; the first gate layer 110a is disposed on the second insulating layer 30 and is located on the semiconductor material
- the third insulating layer 40 is disposed on the first gate layer 110a and the second insulating layer 30; the second gate layer 110b is disposed on the third insulating layer 40 and is directly above the second gate layer 110a;
- the first interlayer dielectric layer 50 is disposed on the second gate layer and the third insulating layer; the second interlayer dielectric layer 60 is disposed on the first interlayer dielectric layer 50.
- the third metal layer 120 is disposed on the second interlayer dielectric layer 60.
- the third metal layer 120 forms a source metal 121 and a drain metal 122.
- the third metal layer 120 is also formed with a second connection metal 123 connected to the drain metal 122 between the first organic flat layer 71 and the second organic flat layer 72, and the second organic flat layer 72 is provided with a second connection The third conductive hole 721 of the metal and anode metal layer 80.
- the organic flat portion 70 includes a first organic flat layer 71 and a second organic flat layer 72.
- the first organic flat layer 71 is disposed in the first area
- the second organic flat layer 72 is disposed in the driving circuit layer 300 and the first organic flat layer.
- the first organic flat layer 71 and the second organic flat layer 72 may be two organic layers formed by two depositions.
- the organic flat layer 70 is a flat buffer layer formed of organic materials.
- the light-emitting layer 200 is disposed above the bending area and the non-bending area.
- the light emitting layer 200 includes an anode metal layer 80, an organic light emitting layer, and a cathode layer.
- the anode metal layer 80 is arranged on the second organic flat layer; the organic light emitting layer is arranged on the anode metal layer; the cathode layer is arranged on the organic light emitting layer.
- the anode metal layer 80 is disposed on the second organic flat layer 72 and is electrically connected to the first part 301 and the second part 302 respectively.
- the anode metal layer 80 is electrically connected to the second connecting metal 123 through the third conductive hole 721 and then to the drain metal.
- a protective insulating layer 90 is provided between the anode metal layer 80 and the organic light emitting layer.
- the protective insulating layer 90 is deposited on the anode metal layer 80 and the second flat layer 72, and the protective insulating layer 90 can be made of silicon nitride.
- the protective insulating layer 90 located above the first area may be removed to form a notch 91.
- FIG. 3 is a second partial cross-sectional view of the OLED display panel provided by an embodiment of the application.
- the anode metal layer 80 extends from the second organic flat layer 72 above the first part to the second organic flat layer 72 above the second part.
- the second organic flat layer 72 is provided with a fourth conductive hole 722 for connecting the drain metal 122 and the anode metal layer 80.
- FIG. 4 is a third partial cross-sectional view of the OLED display panel provided by an embodiment of the application.
- the first organic flat layer 71 and the second organic flat layer 72 are an integrated structure formed by one deposition.
- the first region 132 is also provided with a first connecting metal 124 for connecting with the drain metal 122.
- the organic flat portion 70 covers the third metal layer 120, the second interlayer dielectric layer 60, the first connecting metal 124 and the first region 132; the organic flat portion 70 is provided with the first connecting metal 124 and the anode metal layer 80
- the first conductive hole 701 is electrically connected.
- FIG. 5 is a fourth partial cross-sectional view of the OLED display panel provided by an embodiment of the application.
- the anode metal layer 80 extends from the second organic flat layer 72 above the first part to the second organic flat layer 72 on the second part; the second organic flat layer 72 is provided with The second conductive hole 702 electrically connects the anode metal layer 80 and the drain metal 122.
- the application transfers the circuit in the area with greater stress in the bending area to the area with less stress on both sides, and sets the first area with greater stress as an organic flat layer to improve the OLED display panel.
- the flexural performance can avoid device failure caused by film fracture, thereby improving circuit stability.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本申请提供一种OLED显示面板,包括:柔性基材层,其第一区域的弯折应力大于其第二区域的弯折应力;驱动电路层,其设置于第二区域以及非弯折区域上;有机平坦部,其第一有机平坦层设置于第一区域,其第二有机平坦层设置于驱动电路层以及第一有机平坦层上;发光层,其设于第二有机平坦层上并位于弯折区域以及非弯折区域上方。
Description
本申请涉及显示技术领域,具体涉及一种OLED显示面板。
可弯折显示屏随着柔宇和三星等公司的产品发布引领着一场新的显示技术的变革。在弯折显示屏产品中,弯折中心区域的为应力最集中区域,在动态弯折过程这些部位也往往由于应力作用而膜层断裂导致器件失效。
因此,现有技术存在缺陷,急需改进。
本申请实施例的目的在于提供一种OLED显示面板,能够解决现有的由于应力作用而膜层断裂导致器件失效的技术问题。
本申请实施例提供一种OLED显示面板,包括:
柔性基材层,所述柔性基材层包括弯折区域以及连接在弯折区域的两端的非弯折区域,所述弯折区域包括第一区域以及位于第一区域两相对侧的两个第二区域,所述第一区域的弯折应力大于所述第二区域的弯折应力;
驱动电路层,其设置于所述第二区域以及所述非弯折区域上;
有机平坦部,其包括第一有机平坦层以及第二有机平坦层,所述第一有机平坦层设置于所述第一区域,所述第二有机平坦层设置于所述驱动电路层以及所述第一有机平坦层上;
发光层,其设于所述第二有机平坦层上并位于所述弯折区域以及所述非弯折区域上方;
其中,所述第一区域的宽度大于或等于所述发光层的一个像素的宽度。
在本申请所述的OLED显示面板中,所述驱动电路层包括用于驱动非弯折区域上方的发光层的第一部分以及用于驱动弯折区域上方的发光层的第二部分,所述第一部分与所述第二部分电连接。
在本申请所述的OLED显示面板中,所述驱动电路层包括设置于所述柔性基材层上第三金属层,每一所述第三金属层均形成多个源极金属以及漏极金属。
在本申请所述的OLED显示面板中,所述驱动电路层还包括:
第一绝缘层,其设置于柔性基材层上;
半导体材料层,其设置于所述第一绝缘层上;
第二绝缘层,其设置于所述第一绝缘层以及所述半导体材料层上;
第一栅极层,其设置于所述第二绝缘层上并位于半导体材料层正上方;
第三绝缘层,其设置于所述第一栅极层以及所述第二绝缘层上;
第二栅极层,其设置于所述第三绝缘层上并位于所述第二栅极层正上方;
第一层间介质层,其设置于所述第二栅极层以及所述第三绝缘层上;
第二层间介质层,其设置于所述第一层间介质层上,所述第三金属层设置于所述第二层间介质层上。
在本申请所述的OLED显示面板中,所述发光层包括:
阳极金属层,其设置于所述第二有机平坦层;
有机发光层,其设置于所述阳极金属层上;
阴极层,其设置于所述有机发光层上。
在本申请所述的OLED显示面板中,所述第一区域上还设置有用于与所述第一区域上方的所述漏极金属连接的第一连接金属,所述有机平坦部覆盖于所述第三金属层、所述第一连接金属以及所述第一区域上;
所述有机平坦部开设有将所述第一连接金属与所述发光层电连接的第一导电孔。
在本申请所述的OLED显示面板中,所述阳极金属层由第一部分上方的第二有机平坦层延伸至第二部分上的第二有机平坦层;所述第二有机平坦层开设有将所述阳极金属层以及所述漏极金属电连接的第二导电孔。
在本申请所述的OLED显示面板中,所述第一有机平坦层以及第二有机平坦层为分别采用一次沉积形成。
在本申请所述的OLED显示面板中,所述第一有机平坦层与所述第二有机平坦层之间还设置有与所述第一区域上方的所述漏极金属连接的第二连接金属,所述第二有机平坦层开设有用于连接所述第二连接金属与所述阳极金属层的第三导电孔。
在本申请所述的OLED显示面板中,所述阳极金属层由第一部分上方的第二有机平坦层延伸至第二部分上的第二有机平坦层;所述第二有机平坦层开设有用于连接所述漏极金属以及所述阳极金属层的第四导电孔。
本申请实施例还提供一种OLED显示面板,包括:
柔性基材层,所述柔性基材层包括弯折区域以及连接在弯折区域的两端的非弯折区域,所述弯折区域包括第一区域以及位于第一区域两相对侧的两个第二区域,所述第一区域的弯折应力大于所述第二区域的弯折应力;
驱动电路层,其设置于所述第二区域以及所述非弯折区域上;
有机平坦部,其包括第一有机平坦层以及第二有机平坦层,所述第一有机平坦层设置于所述第一区域,所述第二有机平坦层设置于所述驱动电路层以及所述第一有机平坦层上;
发光层,其设于所述第二有机平坦层上并位于所述弯折区域以及所述非弯折区域上方。
在本申请所述的OLED显示面板中,所述驱动电路层包括用于驱动非弯折区域上方的发光层的第一部分以及用于驱动弯折区域上方的发光层的第二部分,所述第一部分与所述第二部分电连接。
在本申请所述的OLED显示面板中,所述驱动电路层包括设置于所述柔性基材层上第三金属层,每一所述第三金属层均形成多个源极金属以及漏极金属。
在本申请所述的OLED显示面板中,所述驱动电路层还包括:
第一绝缘层,其设置于柔性基材层上;
半导体材料层,其设置于所述第一绝缘层上;
第二绝缘层,其设置于所述第一绝缘层以及所述半导体材料层上;
第一栅极层,其设置于所述第二绝缘层上并位于半导体材料层正上方;
第三绝缘层,其设置于所述第一栅极层以及所述第二绝缘层上;
第二栅极层,其设置于所述第三绝缘层上并位于所述第二栅极层正上方;
第一层间介质层,其设置于所述第二栅极层以及所述第三绝缘层上;
第二层间介质层,其设置于所述第一层间介质层上,所述第三金属层设置于所述第二层间介质层上。
在本申请所述的OLED显示面板中,所述发光层包括:
阳极金属层,其设置于所述第二有机平坦层;
有机发光层,其设置于所述阳极金属层上;
阴极层,其设置于所述有机发光层上;
绝缘层,其设置于所述阴极层上。
在本申请所述的OLED显示面板中,所述第一有机平坦层以及第二有机平坦层为采用一次沉积形成的一体结构。
在本申请所述的OLED显示面板中,所述第一区域上还设置有用于与所述第一区域上方的所述漏极金属连接的第一连接金属,所述有机平坦部覆盖于所述第三金属层、所述第一连接金属以及所述第一区域上;
所述有机平坦部开设有将所述第一连接金属与所述发光层电连接的第一导电孔。
在本申请所述的OLED显示面板中,所述阳极金属层由第一部分上方的第二有机平坦层延伸至第二部分上的第二有机平坦层;所述第二有机平坦层开设有将所述阳极金属层以及所述漏极金属电连接的第二导电孔。
在本申请所述的OLED显示面板中,所述第一有机平坦层以及第二有机平坦层为分别采用一次沉积形成。
在本申请所述的OLED显示面板中,所述第一有机平坦层与所述第二有机平坦层之间还设置有与所述第一区域上方的所述漏极金属连接的第二连接金属,所述第二有机平坦层开设有用于连接所述第二连接金属与所述阳极金属层的第三导电孔。
在本申请所述的OLED显示面板中,所述阳极金属层由第一部分上方的第二有机平坦层延伸至第二部分上的第二有机平坦层;所述第二有机平坦层开设有用于连接所述漏极金属以及所述阳极金属层的第四导电孔。
本申请实施例提供的OLED显示面板,通过将弯折区的应力较大的区域的电路转移到两边应力较小的区域,并将该应力较大的第一区域设置为有机平坦层,提高了该OLED显示面板的弯折性能,可以避免膜层断裂引起的器件失效,从而可以提高电路稳定性。
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的OLED显示面板的结构示意图;
图2为本申请实施例提供的OLED显示面板的第一种局部剖视图;
图3为本申请实施例提供的OLED显示面板的第二种局部剖视图;
图4为本申请实施例提供的OLED显示面板的第三种局部剖视图;以及
图5为本申请实施例提供的OLED显示面板的第四种局部剖视图。
下面详细描述本申请的实施方式,所述实施方式的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本申请,而不能理解为对本申请的限制。
在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
请同时参阅图1以及图2,图1为本申请实施例提供的OLED显示面板的结构示意图。图2为本申请实施例提供的OLED显示面板的第一种局部剖视图。该OLED显示面板包括:柔性基材层10、驱动电路层300、有机平坦部70以及发光层200。
其中,该柔性基材层10采用PI材料制成,具有较好的弯折性能,当然,也可以采用其他材料。其中,该驱动电路层300设置于该柔性基材层上。有机平坦部70设置于驱动电路层300以及柔性基材层上。该发光层200设于有机平坦部70上。
具体地,该柔性基材层10包括弯折区域13以及连接在弯折区域13的两端的非弯折区域11,弯折区域13包括第一区域132以及位于第一区域132两相对侧的两个第二区域131,第一区域132的弯折应力大于第二区域131的弯折应力。该发光层200设置于该非弯折区域11。该柔性基材层10通过该弯折区域13实现对该两个非弯折区域11实现相对弯折,进而实现折叠或者一定角度的夹角。其中,第一区域132的宽度大于或等于发光层的一个像素的宽度。其可以为一个像素宽度也可以为多个像素宽度。
该驱动电路层300包括用于驱动非弯折区域11上方的发光层200的第一部分301以及用于驱动弯折区域13上方的发光层200的第二部分302,所述第一部分301与所述第二部分302电连接。其中,该驱动电路层300包括依次设置的第一绝缘层20、第二绝缘层30、第三绝缘层40、第一层间介质层50、第二层间介质层60、半导体材料层110、第一栅极层110a、第二栅极层110b以及第三金属层120。第一绝缘层20采用氮化硅或者二氧化硅等绝缘材料沉积形成,其设置于柔性基材层;半导体材料层110设置于第一绝缘层20上,其通过参杂工艺形成沟道;第二绝缘层30采用氮化硅或者二氧化硅等绝缘材料沉积形成,其设置于第一绝缘层以及半导体材料层上;第一栅极层110a设置于该第二绝缘层30上并位于半导体材料层正上方;第三绝缘层40设置于第一栅极层110a以及第二绝缘层30上;第二栅极层110b设置于第三绝缘层40上并位于第二栅极层110a正上方;第一层间介质层50设置于第二栅极层以及第三绝缘层上;第二层间介质层60设置于第一层间介质层50上。第三金属层120设置于该第二层间介质层60上。第三金属层120形成有源极金属121、漏级金属122。第三金属层120还形成有位于第一有机平坦层71与第二有机平坦层72之间与漏极金属122连接的第二连接金属123,第二有机平坦层72开设有用于连接第二连接金属与阳极金属层80的第三导电孔721。
其中,该有机平坦部70包括第一有机平坦层71以及第二有机平坦层72,第一有机平坦层71设置于第一区域,第二有机平坦层72设置于驱动电路层300以及第一有机平坦层71上;其中,该第一有机平坦层71以及第二有机平坦层72可以为两次沉积形成的两层有机层。在本申请中,该有机平坦层70为采用有机材料形成的平坦缓冲层。
其中,该发光层200设置于弯折区域以及非弯折区域上方。该发光层200包括阳极金属层80、有机发光层以及阴极层。阳极金属层80,其设置于所述第二有机平坦层;有机发光层,其设置于所述阳极金属层上;阴极层,其设置于所述有机发光层上。该阳极金属层80设于第二有机平坦层72上并分别与第一部分301以及第二部分302电连接。阳极金属层80通过第三导电孔721与该第二连接金属123电连接进而与该漏极金属电连接。其中,该阳极金属层80、有机发光层之间设置有保护绝缘层90。该保护绝缘层90沉积于该阳极金属层80以及该第二平坦层72上,保护绝缘层90可以采用氮化硅材料制成。在一些实施例中,为了提高弯折性能,位于该第一区域的上方的保护绝缘层90可以去除,形成一个缺口部91。
请参阅图3,图3为本申请实施例提供的OLED显示面板的第二种局部剖视图。在一些实施例中,为了增强该阳极金属层80与漏极金属之间的导电稳定性,该阳极金属层80由第一部分上方的第二有机平坦层72延伸至第二部分上的第二有机平坦层72;第二有机平坦层72开设有用于连接漏极金属122以及阳极金属层80的第四导电孔722。
请参阅图4,图4为本申请实施例提供的OLED显示面板的第三种局部剖视图。在一些实施例中,该第一有机平坦层71以及第二有机平坦层72为采用一次沉积形成的一体结构。该第一区域132上还设置有用于与漏极金属122连接的第一连接金属124。该有机平坦部70覆盖于第三金属层120、第二层间介质层60、第一连接金属124以及第一区域132上;有机平坦部70开设有将第一连接金属124与阳极金属层80电连接的第一导电孔701。
请参阅图5,图5为本申请实施例提供的OLED显示面板的第四种局部剖视图。在一些实施例中,为了增强导电稳定性,该阳极金属层80由第一部分上方的第二有机平坦层72延伸至第二部分上的第二有机平坦层72;第二有机平坦层72开设有将阳极金属层80以及漏极金属122电连接的第二导电孔702。
由上可知,本申请通过将弯折区的应力较大的区域的电路转移到两边应力较小的区域,并将该应力较大的第一区域设置为有机平坦层,提高了该OLED显示面板的弯折性能,可以避免膜层断裂引起的器件失效,从而可以提高电路稳定性。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
以上仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (20)
- 一种OLED显示面板,其包括:柔性基材层,所述柔性基材层包括弯折区域以及连接在弯折区域的两端的非弯折区域,所述弯折区域包括第一区域以及位于第一区域两相对侧的两个第二区域,所述第一区域的弯折应力大于所述第二区域的弯折应力;驱动电路层,其设置于所述第二区域以及所述非弯折区域上;有机平坦部,其包括第一有机平坦层以及第二有机平坦层,所述第一有机平坦层设置于所述第一区域,所述第二有机平坦层设置于所述驱动电路层以及所述第一有机平坦层上;发光层,其设于所述第二有机平坦层上并位于所述弯折区域以及所述非弯折区域上方;其中,所述第一区域的宽度大于或等于所述发光层的一个像素的宽度。
- 根据权利要求1所述的OLED显示面板,其中,所述驱动电路层包括用于驱动非弯折区域上方的发光层的第一部分以及用于驱动弯折区域上方的发光层的第二部分,所述第一部分与所述第二部分电连接。
- 根据权利要求2所述的OLED显示面板,其中,所述驱动电路层包括设置于所述柔性基材层上第三金属层,每一所述第三金属层均形成多个源极金属以及漏极金属。
- 根据权利要求3所述的OLED显示面板,其中,所述驱动电路层还包括:第一绝缘层,其设置于柔性基材层上;半导体材料层,其设置于所述第一绝缘层上;第二绝缘层,其设置于所述第一绝缘层以及所述半导体材料层上;第一栅极层,其设置于所述第二绝缘层上并位于半导体材料层正上方;第三绝缘层,其设置于所述第一栅极层以及所述第二绝缘层上;第二栅极层,其设置于所述第三绝缘层上并位于所述第二栅极层正上方;第一层间介质层,其设置于所述第二栅极层以及所述第三绝缘层上;第二层间介质层,其设置于所述第一层间介质层上,所述第三金属层设置于所述第二层间介质层上。
- 根据权利要求3所述的OLED显示面板,其中,所述发光层包括:阳极金属层,其设置于所述第二有机平坦层;有机发光层,其设置于所述阳极金属层上;阴极层,其设置于所述有机发光层上。
- 根据权利要求5所述的OLED显示面板,其中,所述第一区域上还设置有用于与所述第一区域上方的所述漏极金属连接的第一连接金属,所述有机平坦部覆盖于所述第三金属层、所述第一连接金属以及所述第一区域上;所述有机平坦部开设有将所述第一连接金属与所述发光层电连接的第一导电孔。
- 根据权利要6所述的OLED显示面板,其中,所述阳极金属层由第一部分上方的第二有机平坦层延伸至第二部分上的第二有机平坦层;所述第二有机平坦层开设有将所述阳极金属层以及所述漏极金属电连接的第二导电孔。
- 根据权利要求5所述的OLED显示面板,其中,所述第一有机平坦层以及第二有机平坦层为分别采用一次沉积形成。
- 根据权利要求8所述的OLED显示面板,其中,所述第一有机平坦层与所述第二有机平坦层之间还设置有与所述第一区域上方的所述漏极金属连接的第二连接金属,所述第二有机平坦层开设有用于连接所述第二连接金属与所述阳极金属层的第三导电孔。
- 根据权利要求9所述的OLED显示面板,其中,所述阳极金属层由第一部分上方的第二有机平坦层延伸至第二部分上的第二有机平坦层;所述第二有机平坦层开设有用于连接所述漏极金属以及所述阳极金属层的第四导电孔。
- 一种OLED显示面板,其包括:柔性基材层,所述柔性基材层包括弯折区域以及连接在弯折区域的两端的非弯折区域,所述弯折区域包括第一区域以及位于第一区域两相对侧的两个第二区域,所述第一区域的弯折应力大于所述第二区域的弯折应力;驱动电路层,其设置于所述第二区域以及所述非弯折区域上;有机平坦部,其包括第一有机平坦层以及第二有机平坦层,所述第一有机平坦层设置于所述第一区域,所述第二有机平坦层设置于所述驱动电路层以及所述第一有机平坦层上;发光层,其设于所述第二有机平坦层上并位于所述弯折区域以及所述非弯折区域上方。
- 根据权利要求11所述的OLED显示面板,其中,所述驱动电路层包括用于驱动非弯折区域上方的发光层的第一部分以及用于驱动弯折区域上方的发光层的第二部分,所述第一部分与所述第二部分电连接。
- 根据权利要求12所述的OLED显示面板,其中,所述驱动电路层包括设置于所述柔性基材层上第三金属层,每一所述第三金属层均形成多个源极金属以及漏极金属。
- 根据权利要求13所述的OLED显示面板,其中,所述驱动电路层还包括:第一绝缘层,其设置于柔性基材层上;半导体材料层,其设置于所述第一绝缘层上;第二绝缘层,其设置于所述第一绝缘层以及所述半导体材料层上;第一栅极层,其设置于所述第二绝缘层上并位于半导体材料层正上方;第三绝缘层,其设置于所述第一栅极层以及所述第二绝缘层上;第二栅极层,其设置于所述第三绝缘层上并位于所述第二栅极层正上方;第一层间介质层,其设置于所述第二栅极层以及所述第三绝缘层上;第二层间介质层,其设置于所述第一层间介质层上,所述第三金属层设置于所述第二层间介质层上。
- 根据权利要求13所述的OLED显示面板,其中,所述发光层包括:阳极金属层,其设置于所述第二有机平坦层;有机发光层,其设置于所述阳极金属层上;阴极层,其设置于所述有机发光层上。
- 根据权利要求15所述的OLED显示面板,其中,所述第一区域上还设置有用于与所述第一区域上方的所述漏极金属连接的第一连接金属,所述有机平坦部覆盖于所述第三金属层、所述第一连接金属以及所述第一区域上;所述有机平坦部开设有将所述第一连接金属与所述发光层电连接的第一导电孔。
- 根据权利要16所述的OLED显示面板,其中,所述阳极金属层由第一部分上方的第二有机平坦层延伸至第二部分上的第二有机平坦层;所述第二有机平坦层开设有将所述阳极金属层以及所述漏极金属电连接的第二导电孔。
- 根据权利要求15所述的OLED显示面板,其中,所述第一有机平坦层以及第二有机平坦层为分别采用一次沉积形成。
- 根据权利要求18所述的OLED显示面板,其中,所述第一有机平坦层与所述第二有机平坦层之间还设置有与所述第一区域上方的所述漏极金属连接的第二连接金属,所述第二有机平坦层开设有用于连接所述第二连接金属与所述阳极金属层的第三导电孔。
- 根据权利要求19所述的OLED显示面板,其中,所述阳极金属层由第一部分上方的第二有机平坦层延伸至第二部分上的第二有机平坦层;所述第二有机平坦层开设有用于连接所述漏极金属以及所述阳极金属层的第四导电孔。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/622,945 US11362289B2 (en) | 2019-06-25 | 2019-08-14 | Organic light emitting diode display panel having light emitting layer located on bent and non-bent areas |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910552254.7A CN110335887A (zh) | 2019-06-25 | 2019-06-25 | Oled显示面板 |
| CN201910552254.7 | 2019-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020258458A1 true WO2020258458A1 (zh) | 2020-12-30 |
Family
ID=68142381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2019/100547 Ceased WO2020258458A1 (zh) | 2019-06-25 | 2019-08-14 | Oled 显示面板 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11362289B2 (zh) |
| CN (1) | CN110335887A (zh) |
| WO (1) | WO2020258458A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112002702B (zh) * | 2020-08-06 | 2022-09-27 | 武汉华星光电半导体显示技术有限公司 | 柔性显示面板及可卷曲显示装置 |
| CN113206137B (zh) * | 2021-04-29 | 2024-12-13 | 京东方科技集团股份有限公司 | Oled显示装置及其制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106251780A (zh) * | 2016-10-19 | 2016-12-21 | 武汉华星光电技术有限公司 | 柔性显示面板及装置 |
| CN107204357A (zh) * | 2017-07-05 | 2017-09-26 | 武汉华星光电半导体显示技术有限公司 | 一种柔性显示面板及其制备方法、柔性显示装置 |
| CN108550612A (zh) * | 2018-05-29 | 2018-09-18 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
| CN108648631A (zh) * | 2018-06-14 | 2018-10-12 | 昆山国显光电有限公司 | 柔性显示面板及显示装置 |
| CN109830184A (zh) * | 2019-02-22 | 2019-05-31 | 京东方科技集团股份有限公司 | 一种电致发光显示面板及其制备方法、显示装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101965257B1 (ko) * | 2012-10-08 | 2019-04-04 | 삼성디스플레이 주식회사 | 플렉시블 표시 장치 |
| TWI654736B (zh) * | 2014-02-14 | 2019-03-21 | Semiconductor Energy Laboratory Co., Ltd. | 發光裝置 |
| US10411204B2 (en) | 2017-07-05 | 2019-09-10 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co.. Ltd. | Flexible display panel and method for fabricating thereof, flexible display apparatus |
-
2019
- 2019-06-25 CN CN201910552254.7A patent/CN110335887A/zh active Pending
- 2019-08-14 WO PCT/CN2019/100547 patent/WO2020258458A1/zh not_active Ceased
- 2019-08-14 US US16/622,945 patent/US11362289B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106251780A (zh) * | 2016-10-19 | 2016-12-21 | 武汉华星光电技术有限公司 | 柔性显示面板及装置 |
| CN107204357A (zh) * | 2017-07-05 | 2017-09-26 | 武汉华星光电半导体显示技术有限公司 | 一种柔性显示面板及其制备方法、柔性显示装置 |
| CN108550612A (zh) * | 2018-05-29 | 2018-09-18 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
| CN108648631A (zh) * | 2018-06-14 | 2018-10-12 | 昆山国显光电有限公司 | 柔性显示面板及显示装置 |
| CN109830184A (zh) * | 2019-02-22 | 2019-05-31 | 京东方科技集团股份有限公司 | 一种电致发光显示面板及其制备方法、显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20210328161A1 (en) | 2021-10-21 |
| CN110335887A (zh) | 2019-10-15 |
| US11362289B2 (en) | 2022-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12207511B2 (en) | Display device | |
| CN109192878B (zh) | 柔性oled显示面板 | |
| CN107611143B (zh) | 显示装置及其制造方法 | |
| WO2021007977A1 (zh) | 触控基板及显示面板 | |
| TW202107700A (zh) | 顯示基板及顯示裝置 | |
| CN116075171B (zh) | 显示面板及其制备方法 | |
| US20190355762A1 (en) | Flexible display panels and flexible display devices | |
| CN107808892A (zh) | 显示设备 | |
| WO2020237982A1 (zh) | 显示面板及其制备方法、显示装置 | |
| TWI567468B (zh) | 畫素單元以及畫素陣列 | |
| WO2020118817A1 (zh) | 一种oled显示器 | |
| WO2021027081A1 (zh) | 显示面板及显示装置 | |
| CN110391294B (zh) | 柔性阵列基板及柔性显示面板 | |
| WO2021217840A1 (zh) | 显示面板及显示面板的制作方法 | |
| WO2020113838A1 (zh) | 显示面板 | |
| WO2020124799A1 (zh) | 柔性 oled 显示面板以及显示装置 | |
| WO2020228199A1 (zh) | 显示面板及其制备方法、显示装置 | |
| TW201314911A (zh) | 驅動基板及使用其之顯示裝置 | |
| WO2021003880A1 (zh) | 一种柔性显示面板及其制备方法 | |
| CN110690257A (zh) | 一种tft阵列基板及其制造方法 | |
| CN110797352A (zh) | 显示面板及其制作方法、显示装置 | |
| CN110571242A (zh) | 阵列基板及显示面板 | |
| CN115955881A (zh) | 显示面板、显示装置 | |
| WO2020258458A1 (zh) | Oled 显示面板 | |
| WO2021027247A1 (zh) | 显示面板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 19935647 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 19935647 Country of ref document: EP Kind code of ref document: A1 |