WO2020248509A1 - 一种电注入微盘谐振腔发光器件及其制备方法 - Google Patents

一种电注入微盘谐振腔发光器件及其制备方法 Download PDF

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WO2020248509A1
WO2020248509A1 PCT/CN2019/119048 CN2019119048W WO2020248509A1 WO 2020248509 A1 WO2020248509 A1 WO 2020248509A1 CN 2019119048 W CN2019119048 W CN 2019119048W WO 2020248509 A1 WO2020248509 A1 WO 2020248509A1
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microdisk
semiconductor
resonant cavity
emitting device
cavity light
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French (fr)
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张保平
梅洋
许荣彬
徐欢
应磊莹
郑志威
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Xiamen University
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Xiamen University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE

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  • the invention belongs to the technical field of optoelectronics and semiconductor lasers, and specifically relates to an electric injection microdisk resonant cavity light emitting device and a preparation method thereof.
  • semiconductor micro-resonant cavities are attracting more and more attention because of their strong confinement effect on light. They not only provide a good platform for theoretical research such as quantum electrodynamics, but also have good application prospects in practical applications such as single photon sources, micro-nano lasers, and micro-nano LEDs.
  • the semiconductor microdisk resonant cavity is an optical microcavity system based on the whispering gallery mode, in which light propagates and resonates along the edge of the microdisk due to total reflection.
  • the microdisk resonant cavity has the advantages of simple structure, strong optical confinement, small mode volume, low current operation, etc., and it has a wide range of applications in biosensors and photoelectric integration.
  • the semiconductor microdisk resonant cavity Since the modes in the semiconductor microdisk resonant cavity are mainly limited to the edge of the microdisk, the semiconductor microdisk resonant cavity often has a supporting part in the center of the microdisk to connect to the substrate, and the part near the edge of the microdisk is a suspended structure, which can reduce The optical diffraction loss of the small mode to the substrate has a better restriction on the optical mode in the vertical direction.
  • this floating structure brings difficulties to the current injection of the device, and most of the semiconductor microdisk resonators with a floating structure can only work under the condition of an optical pump. Under normal circumstances, the support pillars at the bottom of the semiconductor microdisk resonant cavity are prepared by wet etching the substrate.
  • the support pillars below the microdisk must be used as current channels. This requires the support pillars and the epitaxial layer in the semiconductor microdisk that directly contacts the support pillars to have good conductivity. It is feasible to prepare electrically implanted microdisk resonators in InP-based semiconductor materials in this way, because high-conductivity InP substrates are easy to obtain and wet etching of InP is easier.
  • YHKim et al. prepared an electrically injected microdisk resonator laser with a suspended edge structure in this way. For details, please refer to "Kim Y H, Kwon S H, Lee J M, et al.
  • the current flows through the n-GaN on both sides of the microdisk. Enter the microdisk laterally and inject into the active area. Since there is no suspended structure, the diffraction loss of the optical field in the resonant cavity into the substrate is very large.
  • the epitaxial wafer must be specially designed to form a waveguide structure in the horizontal direction to limit the optical field to the vicinity of the active area in the vertical direction. The Q value is low.
  • the purpose of the present invention is to provide an electrically injected microdisk resonant cavity light emitting device and a preparation method thereof to solve the above-mentioned technical problems.
  • an electrically injected microdisk resonant cavity light emitting device comprising a semiconductor microdisk, a metal support column and a metal support substrate, the semiconductor microdisk is supported on the metal support substrate through the metal support column Above, the edge of the semiconductor microdisk protrudes from the sidewall of the metal supporting column to form a suspended structure.
  • a current spreading layer is also provided between the semiconductor microdisk and the metal supporting column.
  • the semiconductor microdisk has a circular structure.
  • the metal supporting column has a cylindrical structure.
  • the metal supporting column is aligned with the center of the semiconductor microdisk.
  • the semiconductor microdisk includes a stacked p-type semiconductor epitaxial layer, an active region, and an n-type semiconductor epitaxial layer in order from bottom to top.
  • the metal supporting column and the metal supporting substrate are made of copper or aluminum and are integrally formed.
  • the invention also discloses a preparation method for the above-mentioned electric injection microdisk resonant cavity light-emitting device, which is characterized in that it comprises the following steps:
  • step S1 growing a pin structure semiconductor epitaxial layer on the substrate, and proceed to step S2;
  • step S2 depositing a dielectric film layer with small holes on the outer surface of the semiconductor epitaxial layer, and the small holes penetrate the dielectric film layer to the outer surface of the semiconductor epitaxial layer, and proceed to step S3;
  • step S3 preparing a metal layer on the surface of the dielectric film layer, the metal layer fills the small holes of the dielectric film layer, and step S4 is performed;
  • step S5 etching the semiconductor epitaxial layer to form a semiconductor microdisk, and then proceeding to step S6;
  • step S6 remove the dielectric film layer, and go to step S7;
  • an electrode is deposited on the surface of the semiconductor microdisk to complete the device preparation.
  • the dielectric film layer is a SiO 2 dielectric film layer.
  • step S1 a pin structure semiconductor epitaxial layer is grown by MOCVD or MBE;
  • step S3 electroplating is used to prepare a metal layer on the surface of the dielectric film layer
  • step S5 a semiconductor microdisk is formed by photolithography or dry etching
  • step S6 the dielectric film layer is removed by using wet etching.
  • the edge part of the semiconductor microdisk of the present invention is separated from the metal supporting substrate to form a suspended structure, thereby forming a strong restriction on the optical field in the resonant cavity in the vertical direction.
  • the metal supporting column and the metal supporting substrate can simultaneously perform current injection It effectively solves the current injection problem of the microdisk resonator with a suspended edge structure.
  • the metal support column and the metal support substrate also Can better improve the heat dissipation characteristics of the device.
  • the present invention can be prepared by electroplating and wet etching processes, can realize the preparation of electric injection microdisk resonant cavity light-emitting devices suitable for any semiconductor material system, all preparation processes are compatible with standard semiconductor preparation processes, and meet the needs of large-scale optoelectronic integration. It has a broad application prospect.
  • FIG. 1 is a cross-sectional view of the structure of an electrically injected microdisk resonant cavity light emitting device according to a specific embodiment of the present invention
  • Figure 2 is a flow chart of the preparation method of a specific embodiment of the invention.
  • Figure 3 is a schematic diagram of the epitaxial wafer structure
  • FIG. 4 is a schematic diagram of depositing a patterned SiO 2 dielectric film with small holes on the epitaxial wafer
  • Figure 5 is a schematic cross-sectional view of the structure of the sample after the electrode for electroplating is evaporated
  • FIG. 6 is a schematic cross-sectional view of the structure of the sample after electroplating the metal supporting substrate
  • Figure 7 is a schematic cross-sectional view of the structure after the sample is inverted and the original substrate is removed;
  • FIG. 8 is a schematic cross-sectional view of the structure of the sample after etching the microdisk mesa
  • Fig. 9 is a schematic cross-sectional view of the structure of the sample after the SiO 2 dielectric film layer is removed by wet etching;
  • FIG. 10 is a schematic cross-sectional view of the structure of the sample after the electrode on the microdisk is evaporated.
  • an electrically injected microdisk resonant cavity light-emitting device includes a semiconductor microdisk 1, a metal support column 2 and a metal support substrate 3.
  • the semiconductor microdisk 1 is supported on the metal support substrate 3 through the metal support column 2
  • the edge of the semiconductor microdisk 1 protrudes from the sidewalls of the metal support column 2 to form a suspended structure, so that the light field in the resonant cavity of the semiconductor microdisk 1 is reflected in the vertical direction (that is, the direction perpendicular to the metal support substrate 3).
  • the metal support column 2 and the metal support substrate 3 can play the role of current injection at the same time, which solves the current injection problem of the microdisk resonant cavity with a suspended edge structure, and is compared with the traditional microdisk resonator
  • Other semiconductor supporting materials and substrates such as Si in the light-emitting device, the metal supporting column 2 and the metal supporting substrate 3 can also better improve the heat dissipation characteristics of the device.
  • an upper electrode 81 is further included, and the upper electrode 81 is disposed on the upper surface of the semiconductor microdisk 1 (take the direction of FIG. 1 as a reference).
  • the material of the upper electrode 81 may be Cr, Au, Ni, Ti, or other metal electrode materials with good electrical conductivity, or laminated layers of different metal materials such as Cr/Au, Ni/Au, Ti/Au.
  • the semiconductor microdisk 1 preferably has a circular structure, is compact in structure, and is easy to prepare. However, it is not limited thereto. In some embodiments, the semiconductor microdisk 1 may also be triangular, square, hexagonal, or the like.
  • the semiconductor microdisk 1 includes a stacked p-type semiconductor epitaxial layer 14, an active region 13, and an n-type semiconductor epitaxial layer 12 in order from bottom to top, forming a PIN structure. It can be made of GaN-based, GaAs-based, InP-based and other materials.
  • the metal supporting column 2 is preferably a cylindrical structure, which is more suitable for the structure of the circular semiconductor microdisk 1. However, it is not limited to this. In some embodiments, the metal support column 2 may also be triangular column shape, hexagonal column shape, or the like.
  • the metal support column 2 is preferably made of copper or aluminum material, which has good electrical and thermal conductivity and low cost. Of course, in other embodiments, it may also be other metal materials with good thermal and electrical conductivity.
  • the diameter of the semiconductor microdisk 1 is greater than the diameter of the metal support column 2, and the center of the semiconductor microdisk 1 and the metal support column 2 are aligned, that is, the center axis of the semiconductor microdisk 1 coincides with the center axis of the metal support column 2, making the manufacturing process simpler and the structure Stability is better, but not limited to this.
  • the semiconductor microdisk 1 and the metal support pillar 2 may not be aligned centrally, as long as the edge of the semiconductor microdisk 1 protrudes from the sidewall of the metal support pillar 2 to form a suspended structure.
  • the metal supporting substrate 3 is preferably made of copper or aluminum material, which has good electrical and thermal conductivity and low cost. Of course, in other embodiments, it may also be other metal materials with good thermal and electrical conductivity.
  • the metal supporting column 2 and the metal supporting substrate 3 are integrally formed, the preparation process is simple, and the conductive effect is better.
  • a current spreading layer (not shown in the figure) can be selectively deposited between the p-type semiconductor epitaxial layer 14 and the metal support pillar 2 according to the difference in the conductivity of the semiconductor material of the p-type semiconductor epitaxial layer 14.
  • a current spreading layer such as ITO needs to be deposited, but it can be omitted in GaAs-based and InP-based materials.
  • the present invention also discloses a method for manufacturing the above-mentioned electric injection microdisk resonant cavity light-emitting device, which includes the following steps:
  • step S1 growing a pin structure semiconductor epitaxial layer on the substrate, and proceed to step S2.
  • the pin structure semiconductor epitaxial layer is grown on the substrate 11 using the MOCVD or MBE method, specifically: an n-type semiconductor epitaxial layer 12, an active region 13, and a p
  • the type semiconductor epitaxial layer 14 forms an epitaxial wafer.
  • the material of the substrate 11 is selected according to different semiconductor material systems. For example, GaN-based materials generally use GaN, sapphire, Si, SiC and other substrates, GaAs-based materials are generally grown using GaAs substrates, and InP-based materials are grown using InP substrates. .
  • a current spreading layer such as ITO can be selectively prepared on the surface of p-type semiconductor epitaxial layer 14.
  • the current spreading characteristics of p-GaN are poor, and a current spreading layer such as ITO is deposited on the surface of the p-type semiconductor epitaxial layer 14, but it can be omitted in GaAs-based and InP-based materials. In this specific embodiment, no current spreading layer is prepared.
  • step S2 depositing a dielectric film layer with small holes on the outer surface of the semiconductor epitaxial layer, the small holes penetrate the dielectric film layer to the outer surface of the semiconductor epitaxial layer, and proceed to step S3.
  • a SiO 2 dielectric film layer 21 is prepared on the upper surface of the p-type semiconductor epitaxial layer 14 (Of course, in other embodiments, the dielectric film layer 21 may also be SiN, TiO 2 , Ta 2 O 5 and other dielectric films that are easy to be wet-etched), and use photolithography and other processes to pattern the SiO 2 dielectric film 21 into small holes 211, which penetrate through the dielectric film 21 to the outer side of the p-type semiconductor epitaxial layer 14. surface.
  • the thickness of the SiO 2 dielectric film 21 can be several hundreds of nanometers to several micrometers, and the diameter of the small holes 211 can be several micrometers to several hundreds of micrometers.
  • step S3 preparing a metal layer on the surface of the dielectric film layer, the metal layer fills the small holes of the dielectric film layer, and step S4 is entered.
  • a whole metal electrode layer 31 is prepared on the surface of the SiO 2 dielectric film layer 21 and the sidewall and bottom surface of the small hole 211 by sputtering or evaporation, etc., as the electrode for the subsequent electroplating process. , While retaining the shape of the small hole 211 in step S2.
  • the material of the metal electrode layer 31 may be Cr, Au, Ni, Ti, or other metal electrode materials with good electrical conductivity, or laminated layers of different metal materials such as Cr/Au, Ni/Au, and Ti/Au.
  • the metal layer 41 is electroplated on the upper surface of the metal electrode layer 31 by an electroplating method.
  • the thickness of the metal layer 41 can be tens to hundreds of microns.
  • the material of the metal layer 41 can be copper, aluminum or other thermally conductive materials. Metal material with good conductivity.
  • the metal layer 41 fills up the small holes 211.
  • step S4 the substrate is removed, and step S5 is entered.
  • step S3 the sample formed in step S3 is turned upside down, and the substrate 11 is removed by peeling, polishing or etching.
  • step S5 the semiconductor epitaxial layer is etched to form a semiconductor microdisk, and step S6 is performed.
  • the semiconductor microdisk 1 is prepared by using methods such as photolithography and etching, and the etched stop layer is the SiO 2 dielectric film layer 21, so that the SiO 2 dielectric film layer 21 is exposed on the surface.
  • the diameter of the semiconductor microdisk 1 can be several to several hundreds of microns, but is larger than the diameter of the small hole 211.
  • step S6 removing the dielectric film layer, and proceed to step S7.
  • an electrode is deposited on the surface of the semiconductor microdisk to complete the device preparation.
  • an upper electrode 81 is prepared on the upper surface of the n-type semiconductor epitaxial layer 12 by sputtering or evaporation.
  • the material of the upper electrode 81 can be Cr, Au, Ni, Ti or other good conductivity.
  • the metal electrode material or laminated layers of different metal materials such as Cr/Au, Ni/Au, Ti/Au are formed to complete the device preparation.
  • the present invention can be prepared by electroplating and wet etching processes, can realize the preparation of electric injection microdisk resonant cavity light-emitting devices suitable for any semiconductor material system, all preparation processes are compatible with standard semiconductor preparation processes, and meet the needs of large-scale optoelectronic integration. It has a broad application prospect.

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Abstract

本发明涉及光电子、半导体激光技术领域，特别地涉及一种电注入微盘谐振腔发光器件及其制备方法。本发明公开了一种电注入微盘谐振腔发光器件及其制备方法，其中电注入微盘谐振腔发光器件包括半导体微盘、金属支撑柱和金属支撑衬底，半导体微盘通过金属支撑柱支撑在金属支撑衬底上，半导体微盘的边缘突出于金属支撑柱的侧壁而形成悬空结构。本发明很好地解决了具有边缘悬空结构微盘谐振腔的电流注入难题，且相比于传统微盘谐振腔发光器件中的Si等其他半导体支撑材料，金属支撑柱能更好地改善器件的散热特性；金属支撑柱与金属支撑衬底可以通过电镀的方式制备，工艺简单，所有制备工艺与标准半导体制备工艺兼容，满足大规模光电集成的需要。

Description

一种电注入微盘谐振腔发光器件及其制备方法 技术领域
本发明属于光电子、半导体激光技术领域，具体地涉及一种电注入微盘谐振腔发光器件及其制备方法。
背景技术
近年来半导体微谐振腔因为它们对光的强限制作用正吸引着人们越来越多的注意。它们不但为量子电动力学等理论研究提供了很好的平台，也在单光子源、微纳米激光器、微纳米LED等实际应用中有着很好的应用前景。其中半导体微盘谐振腔是一种基于回音壁模式的光学微腔系统，在谐振腔中光由于全反射而沿着微盘的边缘传播、谐振。微盘谐振腔具有结构简单、强光学限制作用、小模式体积、小电流工作等优点，在生物传感器、光电集成等都有广泛的应用。
由于半导体微盘谐振腔中的模式主要都被限制在微盘的边缘，所以半导体微盘谐振腔往往都在微盘中心有一个支撑部分连接衬底，而靠近微盘边缘的部分则为悬空的结构，这样能减小模式向衬底的光学衍射损耗，在垂直方向对光学模式有更好的限制。但是这种悬空的结构给器件的电流注入带来了困难，大部分具有悬空结构的半导体微盘谐振腔都只能工作在光泵条件下。通常情况下半导体微盘谐振腔下部的支撑柱是通过对衬底进行湿法刻蚀的方式制备，为了实现对半导体微盘中有源区的的电流注入，微盘下方的支撑柱就必须作为电流通道，这就要求支撑柱以及半导体微盘中与支撑柱直接接触的外延层需要有良好的导电性。在InP基半导体材料中用这种方式制备电注入的微盘谐振腔是可行的，因为高电导率的InP衬底容易获得且对InP的湿法刻蚀也较容易进行。 2012年Y.H.Kim等人便通过这种方式制备了电注入的具有边缘悬空结构的微盘谐振腔激光器，具体详见「Kim Y H,Kwon S H,Lee J M,et al.Graphene-contact electrically driven microdisk lasers[J].Nature communications,2012,3:1123」和「Park H G,Kim Y H,Hwang M,et al.Nanolaser generator using graphene electrode and method for manufacturing the same:U.S.Patent 8,908,736[P].2014-12-9」，电流通过微盘下方的支撑柱以及微盘上表面的电极注入有源区。但是在其他半导体材料，尤其是GaN基半导体材料中难以再通过此种方式制备电注入微盘腔发光器件。以GaN基半导体材料为例，GaN往往外延生长在GaN、SiC、以及蓝宝石衬底上。对这些衬底的湿法腐蚀较为困难，难以形成悬空结构，且GaN与衬底直接接触的外延层往往为低温成核层，晶体质量较差且电阻率较大，难以作为电流通道。近年来在Si衬底上GaN的外延生长取得较大进展，Si的湿法刻蚀较为容易，因而容易制备具有悬空结构的微盘谐振腔，但是其微盘与Si支撑柱接触的低温成核层仍然具有较大的电阻率，难以实现电流注入。在2004年与2018年，M.Kneissl等人「Kneissl M,Teepe M,Miyashita N,et al.Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission[J].Applied Physics Letters,2004,84(14):2485-2487」与M.Feng等人「Feng M,He J,Sun Q,et al.Room-temperature electrically pumped InGaN-based microdisk laser grown on Si[J].Optics express,2018,26(4):5043-5051」分别报道了电注入的GaN基微盘谐振腔激光器，但是他们的半导体微盘是一种圆柱结构，与衬底直接相连并没有悬空，电流是通过微盘两侧的n-GaN横向进入微盘进而注入有源区。由于没有悬空结构，谐振腔内光场向衬底内的衍射损耗很大，必须特别设计外延片，在水平方 向形成波导结构才能将光场在垂直方向上限制在有源区附近，且谐振腔的Q值较低。
因此，针对以上电注入微盘谐振腔发光器件中的困难，需要开发一种新的能够满足所有半导体材料的电注入微盘谐振腔发光器件。
发明内容
本发明的目的在于提供一种电注入微盘谐振腔发光器件及其制备方法用以解决上述存在的技术问题。
为实现上述目的，本发明采用的技术方案为：一种电注入微盘谐振腔发光器件，包括半导体微盘、金属支撑柱和金属支撑衬底，所述半导体微盘通过金属支撑柱支撑在金属支撑衬底上，所述半导体微盘的边缘突出于金属支撑柱的侧壁而形成悬空结构。
进一步的，所述半导体微盘与金属支撑柱之间还设有电流扩展层。
进一步的，所述半导体微盘为圆形结构。
更进一步的，所述金属支撑柱为圆柱形结构。
更进一步的，所述金属支撑柱与半导体微盘中心对齐。
进一步的，所述半导体微盘从下往上依次包括叠设的p型半导体外延层、有源区和n型半导体外延层。
进一步的，所述金属支撑柱和金属支撑衬底由铜或铝材料制成，且一体成型。
本发明还公开了一种用于上述的电注入微盘谐振腔发光器件的制备方法，其特征在于，包括如下步骤：
S1，在衬底上生长pin结构的半导体外延层，进入步骤S2；
S2，在半导体外延层外表面沉积开有小孔的介质膜层，该小孔贯穿介质膜层至半导体外延层外表面，进入步骤S3；
S3，在介质膜层表面制备金属层，该金属层将介质膜层的小孔填充满，进入步骤S4；
S4，去除衬底，进入步骤S5；
S5，对半导体外延层进行刻蚀，形成半导体微盘，进入步骤S6；
S6，去除介质膜层，进入步骤S7；
S7，在半导体微盘表面沉积上电极，完成器件制备。
进一步的，在步骤S2中，所述介质膜层为SiO 2介质膜层。
更进一步的，在步骤S1中，采用MOCVD或者MBE方式生长pin结构的半导体外延层；
在步骤S3中，采用电镀在介质膜层表面制备金属层；
在步骤S5中，采用光刻或干法刻蚀形成半导体微盘；
在步骤S6中，采用使用湿法腐蚀的方式去除介质膜层。
本发明的有益技术效果：
本发明的半导体微盘的边缘部分与金属支撑衬底分离形成悬空结构，从而在垂直方向上对谐振腔内光场形成较强的限制，金属支撑柱与金属支撑衬底能同时起到电流注入的作用，很好地解决了具有边缘悬空结构微盘谐振腔的电流注入难题，且相比于传统微盘谐振腔发光器件中的Si等其他半导体支撑材料与衬底，金属支撑柱与金属支撑衬底也能更好地改善器件的散热特性。
本发明可以使用电镀以及湿法腐蚀等工艺制备，可以实现适用于任何半导体材料系统的电注入微盘谐振腔发光器件的制备，所有制备工艺与标准半导体 制备工艺兼容，满足大规模光电集成的需要，有着广泛的应用前景。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明具体实施例的电注入微盘谐振腔发光器件的结构剖视图；
图2为发明具体实施例的制备方法流程图；
图3为外延片结构示意图；
图4为在外延片上沉积图形化开有小孔的SiO 2介质膜层示意图；
图5为蒸镀电镀用电极之后样品的结构剖视示意图；
图6为电镀金属支撑衬底之后样品的结构剖视示意图；
图7将样品倒置并去除原有衬底之后的结构剖视示意图；
图8为刻蚀微盘台面之后样品的结构剖视示意图；
图9湿法腐蚀去除SiO 2介质膜层之后样品的结构剖视示意图；
图10为蒸镀微盘上电极之后样品的结构剖视示意图。
具体实施方式
为进一步说明各实施例，本发明提供有附图。这些附图为本发明揭露内容的一部分，其主要用以说明实施例，并可配合说明书的相关描述来解释实施例的运作原理。配合参考这些内容，本领域普通技术人员应能理解其他可能的实 施方式以及本发明的优点。图中的组件并未按比例绘制，而类似的组件符号通常用来表示类似的组件。
现结合附图和具体实施方式对本发明进一步说明。
如图1所示，一种电注入微盘谐振腔发光器件，包括半导体微盘1、金属支撑柱2和金属支撑衬底3，所述半导体微盘1通过金属支撑柱2支撑在金属支撑衬底3上表面，所述半导体微盘1的边缘突出于金属支撑柱2的侧壁而形成悬空结构，从而在垂直方向(即垂直于金属支撑衬底3的方向)上对半导体微盘1的谐振腔内光场形成较强的限制，金属支撑柱2与金属支撑衬底3能同时起到电流注入的作用，很好地解决了具有边缘悬空结构微盘谐振腔的电流注入难题，且相比于传统微盘谐振腔发光器件中的Si等其他半导体支撑材料与衬底，金属支撑柱2与金属支撑衬底3也能更好地改善器件的散热特性。
本具体实施例中，还包括上电极81，所述上电极81设置在半导体微盘1的上表面(以图1的方向为基准)。上电极81的材料可以为Cr、Au、Ni、Ti或者其它电导率良好的金属电极材料或不同金属材料层叠层如Cr/Au、Ni/Au、Ti/Au构成。
本具体实施例中，所述半导体微盘1优选为圆形结构，结构紧凑，且易于制备。但并不以此为限，在一些实施例中，半导体微盘1也可以是三角形、正方形、六边形等。
半导体微盘1从下往上依次包括叠设的p型半导体外延层14、有源区13和n型半导体外延层12，形成PIN结构。可以采用GaN基、GaAs基、InP基等材料制成。
本具体实施例中，所述金属支撑柱2优选为圆柱形结构，与圆形的半导体 微盘1结构更适配。但并不以此为限，在一些实施例中，金属支撑柱2也可以是三角柱形、六边柱形等。金属支撑柱2优选采用铜或铝材料制成，导电性导热性好，且成本低，当然，在其它实施例中，也可以是其它导热导电性良好的金属材料。
半导体微盘1的直径大于金属支撑柱2的直径，且半导体微盘1与金属支撑柱2中心对齐，即半导体微盘1的中轴线与金属支撑柱2的中轴线重合，使得制备工艺更简单，且结构稳定性更好，但不以此为限。在一些实施例中，半导体微盘1与金属支撑柱2也可以不中心对齐，只要半导体微盘1的边缘突出于金属支撑柱2的侧壁而形成悬空结构即可。
本具体实施例中，金属支撑衬底3优选采用铜或铝材料制成，导电性导热性好，且成本低，当然，在其它实施例中，也可以是其它导热导电性良好的金属材料。
本具体实施例中，所述金属支撑柱2和金属支撑衬底3一体成型，制备工艺简便，且导电效果更好。
在一些实施例中，根据p型半导体外延层14的半导体材料导电性差异可以选择性地在p型半导体外延层14与金属支撑柱2之间沉积电流扩展层(图中未示出)。如在GaN基材料系统中，p-GaN电流扩展特性较差，需要沉积ITO等电流扩展层，但是在GaAs基与InP基材料中则可以省略。
如图2所示，本发明还公开了一种用于上述的电注入微盘谐振腔发光器件的制备方法，包括如下步骤：
S1，在衬底上生长pin结构的半导体外延层，进入步骤S2。
具体的，如图3所示，使用MOCVD或者MBE方法在衬底11上生长pin结构 半导体外延层，具体为：在衬底11上依次生长n型半导体外延层12、有源区13、以及p型半导体外延层14，形成外延片。衬底11的材料根据不同半导体材料系统进行相应选择，如GaN基材料一般使用GaN、蓝宝石、Si、SiC等衬底，GaAs基材料生长一般就是用GaAs衬底，InP基材料生长使用InP衬底。
根据不同p型半导体外延层14的材料的导电性差异可以选择性地在p型半导体外延层14表面制备ITO等电流扩展层。如在GaN基材料系统中，p-GaN电流扩展特性较差，则在p型半导体外延层14表面沉积ITO等电流扩展层，但是在GaAs基与InP基材料中则可以省略。本具体实施例中，没有制备电流扩展层。
S2，在半导体外延层外表面沉积开有小孔的介质膜层，该小孔贯穿介质膜层至半导体外延层外表面，进入步骤S3。
具体的，如图4所示，在p型半导体外延层14的上表面制备SiO 2介质膜层21(当然，在其它实施例中，介质膜层21也可以是SiN、TiO 2、Ta 2O 5等容易进行湿法腐蚀的介质膜层)，并使用光刻等工艺将SiO 2介质膜层21图形化出小孔211，小孔211贯穿介质膜层21至p型半导体外延层14的外表面。SiO 2介质膜21的厚度可以为几百纳米至几微米，小孔211的直径可以为几微米至几百微米。
S3，在介质膜层表面制备金属层，该金属层将介质膜层的小孔填充满，进入步骤S4。
具体的，如图5所示，先使用溅射或者蒸镀等方式在SiO 2介质膜层21表面以及小孔211的侧壁和底面制备一整层金属电极层31，作为后续电镀工艺的电极，同时保留步骤S2中小孔211的形状。金属电极层31的材料可以为Cr、Au、Ni、Ti或者其它电导率良好的金属电极材料或不同金属材料层叠层如Cr/Au、Ni/Au、Ti/Au构成。
接着，如图6所示，使用电镀的方法在金属电极层31上表面电镀金属层41，金属层41厚度可以为几十至几百微米，金属层41的材料可以为铜、铝或者其他导热导电性良好的金属材料。金属层41将小孔211填充满。
S4，去除衬底，进入步骤S5。
具体的，如图7所示，将步骤S3形成的样品倒置并使用剥离、抛光或者刻蚀的方法去除衬底11。
S5，对半导体外延层进行刻蚀，形成半导体微盘，进入步骤S6。
具体的，如图8所示，使用光刻以及刻蚀等方法制备出半导体微盘1，刻蚀的截止层为SiO 2介质膜层21，使SiO 2介质膜层21露出表面。半导体微盘1的直径可以为几至几百微米，但要大于小孔211的直径。
S6，去除介质膜层，进入步骤S7。
具体的，如图9所示，使用湿法腐蚀的方式去除SiO 2介质膜层21，半导体微盘1下面的SiO 2也会被向内钻蚀，从而使半导体微盘1的边缘部分与小孔211外的金属层41以及金属电极层31(构成金属支撑衬底3)之间形成具有空气间隙的悬空结构，小孔211内部的金属层41以及金属电极层31则成为了半导体微盘1的支撑结构并同时在电流注入中起到了电流通道作用，即作为金属支撑柱2。
S7，在半导体微盘表面沉积上电极，完成器件制备。
具体的，如图10所示，使用溅射或者蒸镀等方式在n型半导体外延层12上表面制备上电极81，上电极81的材料可以为Cr、Au、Ni、Ti或者其它电导率良好的金属电极材料或不同金属材料层叠层如Cr/Au、Ni/Au、Ti/Au构成，完成器件制备。
本发明可以使用电镀以及湿法腐蚀等工艺制备，可以实现适用于任何半导体材料系统的电注入微盘谐振腔发光器件的制备，所有制备工艺与标准半导体制备工艺兼容，满足大规模光电集成的需要，有着广泛的应用前景。
尽管结合优选实施方案具体展示和介绍了本发明，但所属领域的技术人员应该明白，在不脱离所附权利要求书所限定的本发明的精神和范围内，在形式上和细节上可以对本发明做出各种变化，均为本发明的保护范围。

Claims (15)

  1. 一种电注入微盘谐振腔发光器件，其特征在于：包括半导体微盘、金属支撑柱和金属支撑衬底，所述半导体微盘通过金属支撑柱支撑在金属支撑衬底上，所述半导体微盘的边缘突出于金属支撑柱的侧壁而形成悬空结构。
  2. 根据权利要求1所述的电注入微盘谐振腔发光器件，其特征在于：所述半导体微盘与金属支撑柱之间还设有电流扩展层。
  3. 根据权利要求1所述的电注入微盘谐振腔发光器件，其特征在于：所述半导体微盘为圆形结构。
  4. 根据权利要求3所述的电注入微盘谐振腔发光器件，其特征在于：所述金属支撑柱为圆柱形结构。
  5. 根据权利要求4所述的电注入微盘谐振腔发光器件，其特征在于：所述金属支撑柱与半导体微盘中心对齐。
  6. 根据权利要求1所述的电注入微盘谐振腔发光器件，其特征在于：所述半导体微盘从下往上依次包括叠设的p型半导体外延层、有源区和n型半导体外延层。
  7. 根据权利要求1所述的电注入微盘谐振腔发光器件，其特征在于：所述金属支撑柱和金属支撑衬底由铜材料制成，且一体成型。
  8. 根据权利要求1所述的电注入微盘谐振腔发光器件，其特征在于：所述金属支撑柱和金属支撑衬底由铝材料制成，且一体成型。
  9. 一种用于权利要求1所述的电注入微盘谐振腔发光器件的制备方法，其特征在于，包括如下步骤：
    S1，在衬底上生长pin结构的半导体外延层，进入步骤S2；
    S2，在半导体外延层外表面沉积开有小孔的介质膜层，该小孔贯穿介质膜 层至半导体外延层外表面，进入步骤S3；
    S3，在介质膜层表面制备金属层，该金属层将介质膜层的小孔填充满，进入步骤S4；
    S4，去除衬底，进入步骤S5；
    S5，对半导体外延层进行刻蚀，形成半导体微盘，进入步骤S6；
    S6，去除介质膜层，进入步骤S7；
    S7，在半导体微盘表面沉积上电极，完成器件制备。
  10. 根据权利要求9所述的电注入微盘谐振腔发光器件的制备方法，其特征在于：在步骤S2中，所述介质膜层为SiO 2介质膜层。
  11. 根据权利要求9所述的电注入微盘谐振腔发光器件的制备方法，其特征在于：在步骤S1中，采用MOCVD方式生长pin结构的半导体外延层。
  12. 根据权利要求9所述的电注入微盘谐振腔发光器件的制备方法，其特征在于：在步骤S1中，采用MBE方式生长pin结构的半导体外延层。
  13. 根据权利要求9所述的电注入微盘谐振腔发光器件的制备方法，其特征在于：在步骤S3中，采用电镀在介质膜层表面制备金属层；
  14. 根据权利要求9所述的电注入微盘谐振腔发光器件的制备方法，其特征在于：在步骤S5中，采用光刻或干法刻蚀形成半导体微盘；
  15. 根据权利要求9所述的电注入微盘谐振腔发光器件的制备方法，其特征在于：在步骤S6中，采用使用湿法腐蚀的方式去除介质膜层。
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