WO2020248509A1 - Dispositif électroluminescent à cavité résonante à micro-disque à injection électrique et son procédé de préparation - Google Patents

Dispositif électroluminescent à cavité résonante à micro-disque à injection électrique et son procédé de préparation Download PDF

Info

Publication number
WO2020248509A1
WO2020248509A1 PCT/CN2019/119048 CN2019119048W WO2020248509A1 WO 2020248509 A1 WO2020248509 A1 WO 2020248509A1 CN 2019119048 W CN2019119048 W CN 2019119048W WO 2020248509 A1 WO2020248509 A1 WO 2020248509A1
Authority
WO
WIPO (PCT)
Prior art keywords
microdisk
semiconductor
resonant cavity
emitting device
cavity light
Prior art date
Application number
PCT/CN2019/119048
Other languages
English (en)
Chinese (zh)
Inventor
张保平
梅洋
许荣彬
徐欢
应磊莹
郑志威
Original Assignee
厦门大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 厦门大学 filed Critical 厦门大学
Priority to KR1020207031709A priority Critical patent/KR102434130B1/ko
Publication of WO2020248509A1 publication Critical patent/WO2020248509A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE

Definitions

  • the invention belongs to the technical field of optoelectronics and semiconductor lasers, and specifically relates to an electric injection microdisk resonant cavity light emitting device and a preparation method thereof.
  • semiconductor micro-resonant cavities are attracting more and more attention because of their strong confinement effect on light. They not only provide a good platform for theoretical research such as quantum electrodynamics, but also have good application prospects in practical applications such as single photon sources, micro-nano lasers, and micro-nano LEDs.
  • the semiconductor microdisk resonant cavity is an optical microcavity system based on the whispering gallery mode, in which light propagates and resonates along the edge of the microdisk due to total reflection.
  • the microdisk resonant cavity has the advantages of simple structure, strong optical confinement, small mode volume, low current operation, etc., and it has a wide range of applications in biosensors and photoelectric integration.
  • the semiconductor microdisk resonant cavity Since the modes in the semiconductor microdisk resonant cavity are mainly limited to the edge of the microdisk, the semiconductor microdisk resonant cavity often has a supporting part in the center of the microdisk to connect to the substrate, and the part near the edge of the microdisk is a suspended structure, which can reduce The optical diffraction loss of the small mode to the substrate has a better restriction on the optical mode in the vertical direction.
  • this floating structure brings difficulties to the current injection of the device, and most of the semiconductor microdisk resonators with a floating structure can only work under the condition of an optical pump. Under normal circumstances, the support pillars at the bottom of the semiconductor microdisk resonant cavity are prepared by wet etching the substrate.
  • the support pillars below the microdisk must be used as current channels. This requires the support pillars and the epitaxial layer in the semiconductor microdisk that directly contacts the support pillars to have good conductivity. It is feasible to prepare electrically implanted microdisk resonators in InP-based semiconductor materials in this way, because high-conductivity InP substrates are easy to obtain and wet etching of InP is easier.
  • YHKim et al. prepared an electrically injected microdisk resonator laser with a suspended edge structure in this way. For details, please refer to "Kim Y H, Kwon S H, Lee J M, et al.
  • the current flows through the n-GaN on both sides of the microdisk. Enter the microdisk laterally and inject into the active area. Since there is no suspended structure, the diffraction loss of the optical field in the resonant cavity into the substrate is very large.
  • the epitaxial wafer must be specially designed to form a waveguide structure in the horizontal direction to limit the optical field to the vicinity of the active area in the vertical direction. The Q value is low.
  • the purpose of the present invention is to provide an electrically injected microdisk resonant cavity light emitting device and a preparation method thereof to solve the above-mentioned technical problems.
  • an electrically injected microdisk resonant cavity light emitting device comprising a semiconductor microdisk, a metal support column and a metal support substrate, the semiconductor microdisk is supported on the metal support substrate through the metal support column Above, the edge of the semiconductor microdisk protrudes from the sidewall of the metal supporting column to form a suspended structure.
  • a current spreading layer is also provided between the semiconductor microdisk and the metal supporting column.
  • the semiconductor microdisk has a circular structure.
  • the metal supporting column has a cylindrical structure.
  • the metal supporting column is aligned with the center of the semiconductor microdisk.
  • the semiconductor microdisk includes a stacked p-type semiconductor epitaxial layer, an active region, and an n-type semiconductor epitaxial layer in order from bottom to top.
  • the metal supporting column and the metal supporting substrate are made of copper or aluminum and are integrally formed.
  • the invention also discloses a preparation method for the above-mentioned electric injection microdisk resonant cavity light-emitting device, which is characterized in that it comprises the following steps:
  • step S1 growing a pin structure semiconductor epitaxial layer on the substrate, and proceed to step S2;
  • step S2 depositing a dielectric film layer with small holes on the outer surface of the semiconductor epitaxial layer, and the small holes penetrate the dielectric film layer to the outer surface of the semiconductor epitaxial layer, and proceed to step S3;
  • step S3 preparing a metal layer on the surface of the dielectric film layer, the metal layer fills the small holes of the dielectric film layer, and step S4 is performed;
  • step S5 etching the semiconductor epitaxial layer to form a semiconductor microdisk, and then proceeding to step S6;
  • step S6 remove the dielectric film layer, and go to step S7;
  • an electrode is deposited on the surface of the semiconductor microdisk to complete the device preparation.
  • the dielectric film layer is a SiO 2 dielectric film layer.
  • step S1 a pin structure semiconductor epitaxial layer is grown by MOCVD or MBE;
  • step S3 electroplating is used to prepare a metal layer on the surface of the dielectric film layer
  • step S5 a semiconductor microdisk is formed by photolithography or dry etching
  • step S6 the dielectric film layer is removed by using wet etching.
  • the edge part of the semiconductor microdisk of the present invention is separated from the metal supporting substrate to form a suspended structure, thereby forming a strong restriction on the optical field in the resonant cavity in the vertical direction.
  • the metal supporting column and the metal supporting substrate can simultaneously perform current injection It effectively solves the current injection problem of the microdisk resonator with a suspended edge structure.
  • the metal support column and the metal support substrate also Can better improve the heat dissipation characteristics of the device.
  • the present invention can be prepared by electroplating and wet etching processes, can realize the preparation of electric injection microdisk resonant cavity light-emitting devices suitable for any semiconductor material system, all preparation processes are compatible with standard semiconductor preparation processes, and meet the needs of large-scale optoelectronic integration. It has a broad application prospect.
  • FIG. 1 is a cross-sectional view of the structure of an electrically injected microdisk resonant cavity light emitting device according to a specific embodiment of the present invention
  • Figure 2 is a flow chart of the preparation method of a specific embodiment of the invention.
  • Figure 3 is a schematic diagram of the epitaxial wafer structure
  • FIG. 4 is a schematic diagram of depositing a patterned SiO 2 dielectric film with small holes on the epitaxial wafer
  • Figure 5 is a schematic cross-sectional view of the structure of the sample after the electrode for electroplating is evaporated
  • FIG. 6 is a schematic cross-sectional view of the structure of the sample after electroplating the metal supporting substrate
  • Figure 7 is a schematic cross-sectional view of the structure after the sample is inverted and the original substrate is removed;
  • FIG. 8 is a schematic cross-sectional view of the structure of the sample after etching the microdisk mesa
  • Fig. 9 is a schematic cross-sectional view of the structure of the sample after the SiO 2 dielectric film layer is removed by wet etching;
  • FIG. 10 is a schematic cross-sectional view of the structure of the sample after the electrode on the microdisk is evaporated.
  • an electrically injected microdisk resonant cavity light-emitting device includes a semiconductor microdisk 1, a metal support column 2 and a metal support substrate 3.
  • the semiconductor microdisk 1 is supported on the metal support substrate 3 through the metal support column 2
  • the edge of the semiconductor microdisk 1 protrudes from the sidewalls of the metal support column 2 to form a suspended structure, so that the light field in the resonant cavity of the semiconductor microdisk 1 is reflected in the vertical direction (that is, the direction perpendicular to the metal support substrate 3).
  • the metal support column 2 and the metal support substrate 3 can play the role of current injection at the same time, which solves the current injection problem of the microdisk resonant cavity with a suspended edge structure, and is compared with the traditional microdisk resonator
  • Other semiconductor supporting materials and substrates such as Si in the light-emitting device, the metal supporting column 2 and the metal supporting substrate 3 can also better improve the heat dissipation characteristics of the device.
  • an upper electrode 81 is further included, and the upper electrode 81 is disposed on the upper surface of the semiconductor microdisk 1 (take the direction of FIG. 1 as a reference).
  • the material of the upper electrode 81 may be Cr, Au, Ni, Ti, or other metal electrode materials with good electrical conductivity, or laminated layers of different metal materials such as Cr/Au, Ni/Au, Ti/Au.
  • the semiconductor microdisk 1 preferably has a circular structure, is compact in structure, and is easy to prepare. However, it is not limited thereto. In some embodiments, the semiconductor microdisk 1 may also be triangular, square, hexagonal, or the like.
  • the semiconductor microdisk 1 includes a stacked p-type semiconductor epitaxial layer 14, an active region 13, and an n-type semiconductor epitaxial layer 12 in order from bottom to top, forming a PIN structure. It can be made of GaN-based, GaAs-based, InP-based and other materials.
  • the metal supporting column 2 is preferably a cylindrical structure, which is more suitable for the structure of the circular semiconductor microdisk 1. However, it is not limited to this. In some embodiments, the metal support column 2 may also be triangular column shape, hexagonal column shape, or the like.
  • the metal support column 2 is preferably made of copper or aluminum material, which has good electrical and thermal conductivity and low cost. Of course, in other embodiments, it may also be other metal materials with good thermal and electrical conductivity.
  • the diameter of the semiconductor microdisk 1 is greater than the diameter of the metal support column 2, and the center of the semiconductor microdisk 1 and the metal support column 2 are aligned, that is, the center axis of the semiconductor microdisk 1 coincides with the center axis of the metal support column 2, making the manufacturing process simpler and the structure Stability is better, but not limited to this.
  • the semiconductor microdisk 1 and the metal support pillar 2 may not be aligned centrally, as long as the edge of the semiconductor microdisk 1 protrudes from the sidewall of the metal support pillar 2 to form a suspended structure.
  • the metal supporting substrate 3 is preferably made of copper or aluminum material, which has good electrical and thermal conductivity and low cost. Of course, in other embodiments, it may also be other metal materials with good thermal and electrical conductivity.
  • the metal supporting column 2 and the metal supporting substrate 3 are integrally formed, the preparation process is simple, and the conductive effect is better.
  • a current spreading layer (not shown in the figure) can be selectively deposited between the p-type semiconductor epitaxial layer 14 and the metal support pillar 2 according to the difference in the conductivity of the semiconductor material of the p-type semiconductor epitaxial layer 14.
  • a current spreading layer such as ITO needs to be deposited, but it can be omitted in GaAs-based and InP-based materials.
  • the present invention also discloses a method for manufacturing the above-mentioned electric injection microdisk resonant cavity light-emitting device, which includes the following steps:
  • step S1 growing a pin structure semiconductor epitaxial layer on the substrate, and proceed to step S2.
  • the pin structure semiconductor epitaxial layer is grown on the substrate 11 using the MOCVD or MBE method, specifically: an n-type semiconductor epitaxial layer 12, an active region 13, and a p
  • the type semiconductor epitaxial layer 14 forms an epitaxial wafer.
  • the material of the substrate 11 is selected according to different semiconductor material systems. For example, GaN-based materials generally use GaN, sapphire, Si, SiC and other substrates, GaAs-based materials are generally grown using GaAs substrates, and InP-based materials are grown using InP substrates. .
  • a current spreading layer such as ITO can be selectively prepared on the surface of p-type semiconductor epitaxial layer 14.
  • the current spreading characteristics of p-GaN are poor, and a current spreading layer such as ITO is deposited on the surface of the p-type semiconductor epitaxial layer 14, but it can be omitted in GaAs-based and InP-based materials. In this specific embodiment, no current spreading layer is prepared.
  • step S2 depositing a dielectric film layer with small holes on the outer surface of the semiconductor epitaxial layer, the small holes penetrate the dielectric film layer to the outer surface of the semiconductor epitaxial layer, and proceed to step S3.
  • a SiO 2 dielectric film layer 21 is prepared on the upper surface of the p-type semiconductor epitaxial layer 14 (Of course, in other embodiments, the dielectric film layer 21 may also be SiN, TiO 2 , Ta 2 O 5 and other dielectric films that are easy to be wet-etched), and use photolithography and other processes to pattern the SiO 2 dielectric film 21 into small holes 211, which penetrate through the dielectric film 21 to the outer side of the p-type semiconductor epitaxial layer 14. surface.
  • the thickness of the SiO 2 dielectric film 21 can be several hundreds of nanometers to several micrometers, and the diameter of the small holes 211 can be several micrometers to several hundreds of micrometers.
  • step S3 preparing a metal layer on the surface of the dielectric film layer, the metal layer fills the small holes of the dielectric film layer, and step S4 is entered.
  • a whole metal electrode layer 31 is prepared on the surface of the SiO 2 dielectric film layer 21 and the sidewall and bottom surface of the small hole 211 by sputtering or evaporation, etc., as the electrode for the subsequent electroplating process. , While retaining the shape of the small hole 211 in step S2.
  • the material of the metal electrode layer 31 may be Cr, Au, Ni, Ti, or other metal electrode materials with good electrical conductivity, or laminated layers of different metal materials such as Cr/Au, Ni/Au, and Ti/Au.
  • the metal layer 41 is electroplated on the upper surface of the metal electrode layer 31 by an electroplating method.
  • the thickness of the metal layer 41 can be tens to hundreds of microns.
  • the material of the metal layer 41 can be copper, aluminum or other thermally conductive materials. Metal material with good conductivity.
  • the metal layer 41 fills up the small holes 211.
  • step S4 the substrate is removed, and step S5 is entered.
  • step S3 the sample formed in step S3 is turned upside down, and the substrate 11 is removed by peeling, polishing or etching.
  • step S5 the semiconductor epitaxial layer is etched to form a semiconductor microdisk, and step S6 is performed.
  • the semiconductor microdisk 1 is prepared by using methods such as photolithography and etching, and the etched stop layer is the SiO 2 dielectric film layer 21, so that the SiO 2 dielectric film layer 21 is exposed on the surface.
  • the diameter of the semiconductor microdisk 1 can be several to several hundreds of microns, but is larger than the diameter of the small hole 211.
  • step S6 removing the dielectric film layer, and proceed to step S7.
  • an electrode is deposited on the surface of the semiconductor microdisk to complete the device preparation.
  • an upper electrode 81 is prepared on the upper surface of the n-type semiconductor epitaxial layer 12 by sputtering or evaporation.
  • the material of the upper electrode 81 can be Cr, Au, Ni, Ti or other good conductivity.
  • the metal electrode material or laminated layers of different metal materials such as Cr/Au, Ni/Au, Ti/Au are formed to complete the device preparation.
  • the present invention can be prepared by electroplating and wet etching processes, can realize the preparation of electric injection microdisk resonant cavity light-emitting devices suitable for any semiconductor material system, all preparation processes are compatible with standard semiconductor preparation processes, and meet the needs of large-scale optoelectronic integration. It has a broad application prospect.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne le domaine technique des photoélectrons et des lasers à semi-conducteur, en particulier, un dispositif électroluminescent à cavité résonante à micro-disque à injection électrique et un procédé de préparation associé. L'invention concerne un dispositif électroluminescent à cavité résonante à micro-disque à injection électrique et son procédé de préparation. Le dispositif électroluminescent à cavité résonante à micro-disque à injection électrique comprend un micro-disque semi-conducteur, une colonne de support métallique et un substrat de support métallique, le micro-disque semi-conducteur étant supporté sur le substrat de support métallique au moyen de la colonne de support métallique, et un bord du micro-disque semi-conducteur fait saillie hors d'une paroi latérale de la colonne de support métallique pour former une structure suspendue. La présente invention fournit une bonne solution pour le problème de l'injection de courant d'une cavité résonante de micro-disque ayant une structure en suspension de bord, et par comparaison avec d'autres matériaux de support semi-conducteurs tels que Si dans un dispositif électroluminescent à cavité résonante à micro-disque classique, la colonne de support métallique peut mieux améliorer une caractéristique de dissipation de chaleur du dispositif ; et la colonne de support métallique et le substrat de support métallique peuvent être préparés d'une manière d'électrodéposition, le procédé est simple, tous les procédés de préparation sont compatibles avec un procédé de préparation de semi-conducteur standard, et l'exigence d'intégration photoélectrique à grande échelle est satisfaite.
PCT/CN2019/119048 2019-06-14 2019-11-18 Dispositif électroluminescent à cavité résonante à micro-disque à injection électrique et son procédé de préparation WO2020248509A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020207031709A KR102434130B1 (ko) 2019-06-14 2019-11-18 전기적으로 주입되는 마이크로 디스크 공진 캐비티 발광 디바이스 및 그 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910514858.2 2019-06-14
CN201910514858.2A CN110212078B (zh) 2019-06-14 2019-06-14 一种电注入微盘谐振腔发光器件及其制备方法

Publications (1)

Publication Number Publication Date
WO2020248509A1 true WO2020248509A1 (fr) 2020-12-17

Family

ID=67792561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/119048 WO2020248509A1 (fr) 2019-06-14 2019-11-18 Dispositif électroluminescent à cavité résonante à micro-disque à injection électrique et son procédé de préparation

Country Status (3)

Country Link
KR (1) KR102434130B1 (fr)
CN (1) CN110212078B (fr)
WO (1) WO2020248509A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110212078B (zh) * 2019-06-14 2020-10-27 厦门大学 一种电注入微盘谐振腔发光器件及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140233599A1 (en) * 2013-02-21 2014-08-21 Korea University Research And Business Foundation Nanolaser generator using graphene electrode and method for manufacturing the same
CN105731352A (zh) * 2016-03-01 2016-07-06 南京大学 一种片上集成硫化砷微盘腔及其制作方法
CN110212078A (zh) * 2019-06-14 2019-09-06 厦门大学 一种电注入微盘谐振腔发光器件及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101075726A (zh) * 2006-05-18 2007-11-21 中国科学院半导体研究所 制作半导体微盘激光器的方法
CN100524981C (zh) * 2006-11-01 2009-08-05 中国科学院半导体研究所 基于tm模激射的圆柱形结构的微盘激光器
US20090050867A1 (en) * 2007-08-20 2009-02-26 David Wells Feature formed beneath an existing material during fabrication of a semiconductor device and electronic systems comprising the semiconductor device
CN101226981B (zh) * 2008-01-29 2011-05-04 中山大学 一种半导体发光器件及其制造方法
JP5427371B2 (ja) * 2008-06-20 2014-02-26 テヒニッシェ ウニヴェルズィテート ベルリン データ伝送光電子装置
CN103137793A (zh) * 2011-11-25 2013-06-05 同方光电科技有限公司 一种采用多层介质膜反射的垂直结构发光二极管制作方法
CN102718180A (zh) * 2012-06-28 2012-10-10 中国科学院苏州纳米技术与纳米仿生研究所 同心环芯纳米硅微盘微腔器件及其制备方法
CN103633203B (zh) * 2013-05-08 2016-12-28 南京邮电大学 悬空氮化物薄膜led器件及其制备方法
CN103811598B (zh) * 2013-12-12 2016-03-23 南京邮电大学 硅基氮化物材料的氧化铪悬空谐振光子器件及其制备方法
CN103779452B (zh) * 2014-01-21 2016-10-05 南京邮电大学 悬空氮化物薄膜led器件及制备方法
CN104101945A (zh) * 2014-07-23 2014-10-15 宁波屹诺电子科技有限公司 一种基于水平狭缝光波导的微盘谐振腔及其制作方法
CN204028397U (zh) * 2014-07-23 2014-12-17 宁波屹诺电子科技有限公司 一种基于水平狭缝光波导的微盘谐振腔
EP3067723A1 (fr) * 2015-03-13 2016-09-14 Université Paris Diderot - Paris 7 Methode de réglage d'un ou de plusieurs résonateurs
CN107069430B (zh) * 2017-04-18 2019-07-05 中国科学院半导体研究所 硅基电注入激光器及其制备方法
CN109095435A (zh) * 2018-08-02 2018-12-28 北京大学 一种三维全金属微腔结构表面等离激元阵列加工方法
CN109449752A (zh) * 2018-10-19 2019-03-08 世坤(厦门)半导体科技有限公司 氮化物基谐振腔发光器件及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140233599A1 (en) * 2013-02-21 2014-08-21 Korea University Research And Business Foundation Nanolaser generator using graphene electrode and method for manufacturing the same
CN105731352A (zh) * 2016-03-01 2016-07-06 南京大学 一种片上集成硫化砷微盘腔及其制作方法
CN110212078A (zh) * 2019-06-14 2019-09-06 厦门大学 一种电注入微盘谐振腔发光器件及其制备方法

Also Published As

Publication number Publication date
KR102434130B1 (ko) 2022-08-18
CN110212078A (zh) 2019-09-06
CN110212078B (zh) 2020-10-27
KR20200143410A (ko) 2020-12-23

Similar Documents

Publication Publication Date Title
WO2018184288A1 (fr) Puce de vcsel à base de dbr-et de gan poreux, et procédé de fabrication
CN101667716B (zh) 一种双面键合长波长垂直腔面发射激光器及其制作方法
CN102025110B (zh) 斜腔面二维光子晶体分布反馈量子级联激光器及制备方法
CN109873297B (zh) 一种GaN基垂直腔面发射激光器及其制备方法
CN103872580B (zh) 介质薄膜电流限制型垂直腔面发射激光器及其制作方法
CN108028513B (zh) 纳米线激光器结构和制造方法
CN101867147B (zh) 一种量子级联正多边形微腔激光器及其制作方法
CN102570302B (zh) 偏振波长可调谐垂直腔面发射激光器及其制备方法
WO2021004181A1 (fr) Procédé de préparation d'un laser à émission par la surface à cavité verticale à base de gan
JP3863962B2 (ja) 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子とその製造方法
CN110011181A (zh) 晶体管垂直腔面发射激光器及其制备方法
JPH11238687A (ja) 半導体基板および半導体発光素子
CN115548880A (zh) 多隧道结倒装表面浮雕结构的垂直腔面发射激光器阵列
WO2020248509A1 (fr) Dispositif électroluminescent à cavité résonante à micro-disque à injection électrique et son procédé de préparation
CN213692647U (zh) 一种半导体激光器集成芯片
CN105140778A (zh) 一种多边形-环硅基激光器及其制备方法
CN116799617A (zh) 多孔dbr的vcsel芯片及其制备方法
CN114006264B (zh) 一种长波长vcsel的结构及其制备方法
CN114094440B (zh) 基于薄膜翻转工艺的GaN基面发射激光器及制备方法
CN113437191B (zh) 基于回音壁模式的电注入等离激元激光器阵列及制备方法
CN209608089U (zh) 晶体管垂直腔面发射激光器
CN210040877U (zh) 一种水平空气柱电流注入孔径结构的垂直腔面发射激光器
CN113410759A (zh) 一种半导体激光器集成芯片及其制备方法
CN111048993A (zh) 一种微碟激光器及其制备方法
CN100472829C (zh) 半导体发光元件及其制造方法

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 20207031709

Country of ref document: KR

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19932500

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19932500

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 19932500

Country of ref document: EP

Kind code of ref document: A1