WO2020237830A1 - 柔性有机发光二极管显示面板及其制造方法 - Google Patents

柔性有机发光二极管显示面板及其制造方法 Download PDF

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Publication number
WO2020237830A1
WO2020237830A1 PCT/CN2019/099586 CN2019099586W WO2020237830A1 WO 2020237830 A1 WO2020237830 A1 WO 2020237830A1 CN 2019099586 W CN2019099586 W CN 2019099586W WO 2020237830 A1 WO2020237830 A1 WO 2020237830A1
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inorganic layer
emitting diode
soft metal
light emitting
layer
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PCT/CN2019/099586
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English (en)
French (fr)
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刘威
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武汉华星光电半导体显示技术有限公司
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Priority to US16/623,963 priority Critical patent/US11411201B2/en
Publication of WO2020237830A1 publication Critical patent/WO2020237830A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H10K50/181—Electron blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technology, in particular to a flexible organic light emitting diode display panel and a manufacturing method thereof.
  • Thin film encapsulation (TFE) technology can make OLED display devices no longer need to use a rigid glass cover, and can enable OLED display devices to achieve flexible bending, so thin film encapsulation technology is currently widely used in many packaging technologies technology.
  • the thin film packaging technology adopts a multilayer packaging structure forming an organic layer/inorganic layer to protect the OLED device.
  • the inorganic layer can effectively prevent the intrusion of water and oxygen and prolong the service life of the OLED display panel; the organic layer can make the diffusion path of water and oxygen invade into the OLED device discontinuous, and can relieve stress.
  • the inorganic layer in the multi-layer package structure cannot withstand excessive stress, and the inorganic layer is still easily broken during the bending process of the display panel. The fracture of the inorganic layer will affect the packaging effect of the packaging structure.
  • the purpose of the present invention is to provide a flexible organic light emitting diode display panel and a bendable display device to solve the technical problem that the bending performance of the flexible organic light emitting diode display panel cannot be further improved in the prior art.
  • the present invention provides a flexible organic light emitting diode display panel.
  • the method includes a substrate, a first inorganic layer doped with soft metal, an organic layer, and a second inorganic layer doped with soft metal.
  • the substrate includes a flexible bottom plate and a thin film transistor array and an organic light emitting diode device sequentially arranged on the flexible bottom plate.
  • the first inorganic layer doped with soft metal is disposed on the substrate.
  • the organic layer is disposed on the first inorganic layer.
  • the second inorganic layer doped with soft metal is disposed on the organic layer.
  • the material of the organic layer is acrylic resin or epoxy resin
  • the second inorganic layer of metal includes an inorganic material and a soft metal
  • the soft metal is nickel, copper or silver.
  • the inorganic material is one selected from SiN X , SiO X , SiON X , SiCN X , Al 2 O 3 and any combination thereof.
  • the doping concentration of the soft metal in the first inorganic layer and the second inorganic layer is between 8% and 40% by atomic percentage. .
  • the thickness of the first inorganic layer and the second inorganic layer is between 0.5 ⁇ m and 1 ⁇ m, and the thickness of the organic layer is between 3 ⁇ m and 8 ⁇ m. Between micrometers.
  • the present invention also provides a method of manufacturing a flexible organic light emitting diode display panel.
  • the method includes: providing a substrate, the substrate comprising a flexible bottom plate and a thin film transistor array and an organic light emitting diode device sequentially arranged on the flexible bottom plate; forming a first inorganic layer doped with a soft metal on the substrate Forming an organic layer on the first inorganic layer; and forming a second inorganic layer doped with soft metal on the organic layer.
  • the material of the organic layer is acrylic resin or epoxy resin
  • the second inorganic layer with soft metal includes inorganic material and soft metal, and the soft metal is nickel, copper or silver.
  • the inorganic material is one selected from SiN X , SiO X , SiON X , SiCN X , Al 2 O 3 and any combination thereof.
  • the doping concentration of the soft metal in the first inorganic layer and the second inorganic layer is 8% to 40% by atom. %between.
  • the thickness of the first inorganic layer and the second inorganic layer is between 0.5 ⁇ m and 1 ⁇ m, and the thickness of the organic layer is 3 ⁇ m. Between microns and 8 microns.
  • the present invention provides a flexible organic light emitting diode display panel and a manufacturing method thereof.
  • the toughness of the inorganic layer of the film encapsulation structure can be improved.
  • the inorganic layer of the film encapsulation structure is not easily broken during the bending process of the display panel, which improves the flexible organic light emission The bending performance of the diode display panel.
  • FIG. 1 shows a flexible organic light emitting diode (organic light emitting diode) provided by an embodiment of the present invention.
  • diode, OLED organic light emitting diode
  • FIG. 2 shows a flowchart of a method for manufacturing a flexible organic light emitting diode display panel provided by an embodiment of the present invention.
  • the embodiment of the present invention provides a flexible organic light emitting diode display panel, which will be described in detail below.
  • FIG. 1 shows a cross-sectional side view of a flexible organic light emitting diode (OLED) display panel provided by an embodiment of the present invention.
  • OLED organic light emitting diode
  • the flexible organic light emitting diode display panel 1000 includes a substrate 101, a first inorganic layer 201 doped with a soft metal, and a second inorganic layer 202 doped with a soft metal.
  • the first inorganic layer 201 doped with soft metal is disposed on the substrate 101.
  • the organic layer 301 is disposed on the first inorganic layer 201.
  • the second inorganic layer 202 doped with soft metal is disposed on the organic layer 301.
  • the substrate 101 includes a flexible bottom plate (not shown) and a thin film transistor array and an organic light emitting diode (OLED) device (not shown) sequentially arranged on the flexible bottom plate.
  • the flexible bottom plate is made of flexible materials.
  • the material of the bottom plate can be polyimide (PI) or polyethylene terephthalate (polyethylene terephthalate). terephthalate, PET).
  • OLED devices from bottom to top mainly include anode, hole injection layer, hole transport layer, electron blocking layer, light emitting layer, electron transport layer, electron injection layer, cathode, light coupling output layer, and lithium fluoride (LiF) layer Wait.
  • the thin film transistor array is used to control whether the OLED device emits light.
  • the thin film transistor array can form an electric field between the anode and the cathode, thereby injecting holes from the anode to the light-emitting layer through the hole injection layer and the hole transport layer, and injects electrons from the cathode through the electron injection layer and the electron transport layer To the light-emitting layer, holes and electrons recombine in the light-emitting layer to emit visible light.
  • the material of the light outcoupling layer is a hole-type organic small molecule material, which can reduce the loss of light inside the OLED device and further improve the luminous efficiency of the OLED device.
  • the lithium fluoride (LiF) layer can play a protective role to prevent the organic layer from being damaged during the subsequent forming process of the thin film encapsulation layer.
  • the first inorganic layer 201 is disposed on the substrate 101; that is, the first inorganic layer 201 is directly formed on a lithium fluoride (LiF) layer.
  • the OLED device may not include a lithium fluoride (LiF) layer or a light outcoupling layer, so the first inorganic layer 201 is directly formed on the light outcoupling layer or the cathode.
  • the first inorganic layer 201, the organic layer 301, and the second inorganic layer 202 together form a thin film encapsulation layer 500.
  • the thin film encapsulation layer 500 is used to protect the OLED device, prevent the OLED device from being physically scratched and avoid Foreign matter invades into the OLED device.
  • the material of the organic layer 301 may be acrylic resin or epoxy resin. These organic materials can make the diffusion path of water and oxygen into the OLED device discontinuous, and can relieve stress.
  • the first inorganic layer 201 doped with soft metal and the second inorganic layer 202 doped with soft metal include inorganic materials and soft metals.
  • the inorganic material is one selected from SiN X , SiO X , SiON X , SiCN X , Al 2 O 3 and any combination thereof.
  • the inorganic materials in the first inorganic layer 201 doped with soft metal and the second inorganic layer 202 doped with soft metal can effectively prevent the intrusion of water and oxygen and prolong the service life of the OLED display panel.
  • the soft metal doped in the inorganic layer is obtained by simultaneous thin film deposition using soft metal and inorganic material as starting materials.
  • the soft metal may be nickel, copper or silver.
  • the toughness of the inorganic layer can be improved.
  • the effect of improving the toughness of the inorganic layer by doping with nickel is the most significant. Due to the fast diffusion rate of soft metal atoms in the medium, during the film deposition process of forming the first inorganic layer 201 doped with soft metal and the second inorganic layer 202 doped with soft metal, The soft metal atoms can diffuse to the grain boundaries very quickly and inhibit the growth of the grains.
  • the formation of the inorganic layer doped with the soft metal has a smaller grain size than the formation of the inorganic layer not doped with the soft metal.
  • This size effect can improve the film toughness of the finally formed inorganic layer.
  • the toughness of the inorganic layer of the thin-film encapsulation structure is improved, so the inorganic layer of the thin-film encapsulation structure is not easily broken during the bending process of the display panel, which improves the bending performance of the flexible organic light emitting diode display panel.
  • the film deposition process conditions can be controlled so that the soft metal is in the first inorganic layer 201 and the second inorganic layer 201.
  • the doping concentration in the second inorganic layer 202 is between 8% and 40% by atom
  • the thickness of the first inorganic layer 201 and the second inorganic layer 202 is between 0.5 ⁇ m and 1 ⁇ m
  • the organic The thickness of layer 301 is between 3 microns and 8 microns.
  • the selection of such soft metal doping concentration range and thickness range is adjusted so that the first inorganic layer 201 and the second inorganic layer 202 can effectively prevent the intrusion of water and oxygen, and make the first inorganic layer 201 and The second inorganic layer 202 has toughness and is not easy to break.
  • FIG. 2 shows a flowchart of a method for manufacturing a flexible organic light emitting diode display panel provided by an embodiment of the present invention.
  • the present invention also provides a method of manufacturing the flexible organic light emitting diode display panel 1000.
  • the method is used to form the flexible organic light emitting diode display panel of FIG. 1.
  • the method includes the following steps.
  • a substrate 101 is provided, and the substrate includes a flexible base plate and a thin film transistor array and an organic light emitting diode device sequentially arranged on the flexible base plate.
  • the substrate 101 includes a flexible backplane (not shown) and a thin film transistor array and an organic light emitting diode (OLED) device (not shown) sequentially arranged on the flexible backplane. Out).
  • the flexible bottom plate is made of flexible materials.
  • the material of the bottom plate can be polyimide (PI) or polyethylene terephthalate (polyethylene terephthalate). terephthalate, PET).
  • OLED devices from bottom to top mainly include anode, hole injection layer, hole transport layer, electron blocking layer, light emitting layer, electron transport layer, electron injection layer, cathode, light coupling output layer, and lithium fluoride (LiF) layer Wait.
  • the thin film transistor array is used to control whether the OLED device emits light.
  • the thin film transistor array can form an electric field between the anode and the cathode, thereby injecting holes from the anode to the light-emitting layer through the hole injection layer and the hole transport layer, and injects electrons from the cathode through the electron injection layer and the electron transport layer To the light-emitting layer, holes and electrons recombine in the light-emitting layer to emit visible light.
  • the material of the light outcoupling layer is a hole-type organic small molecule material, which can reduce the loss of light inside the OLED device and further improve the luminous efficiency of the OLED device.
  • the lithium fluoride (LiF) layer can play a protective role to prevent the organic layer from being damaged during the subsequent forming process of the thin film encapsulation layer.
  • step S200 a first inorganic layer 201 doped with a soft metal is formed on the substrate 101.
  • the first inorganic layer 201 doped with soft metal is obtained by simultaneous thin film deposition, such as magnetron sputtering, using soft metal and inorganic material as starting materials.
  • the inorganic material is one selected from SiN X , SiO X , SiON X , SiCN X , Al 2 O 3 and any combination thereof.
  • the film deposition process conditions can be controlled so that the doping concentration of the soft metal in the first inorganic layer 201 is between 8% and 40% by atomic percentage, and the thickness of the first inorganic layer 201 is 0.5 Between micron and 1 micron.
  • step S300 an organic layer 301 is formed on the first inorganic layer 201.
  • the organic layer 301 may be formed by using chemical vapor deposition (CVD) technology.
  • the formed organic layer 301 is made of acrylic resin or epoxy resin. Such a material can make the diffusion path of water and oxygen into the OLED device discontinuous, and can eliminate stress.
  • step S400 a second inorganic layer 202 doped with a soft metal is formed on the organic layer 301.
  • the second inorganic layer 202 doped with soft metal is obtained by simultaneously performing thin film deposition, such as magnetron sputtering, using soft metal and inorganic material as starting materials.
  • the inorganic material is one selected from SiN X , SiO X , SiON X , SiCN X , Al 2 O 3 and any combination thereof.
  • the thin film deposition process conditions can be controlled so that the doping concentration of the soft metal in the second inorganic layer 202 is between 8% and 40% by atomic percent, and the thickness of the second inorganic layer 202 is 0.5 Between micron and 1 micron.
  • the present invention provides a flexible organic light emitting diode display panel and a manufacturing method thereof.
  • the toughness of the inorganic layer of the film encapsulation structure can be improved.
  • the inorganic layer of the film encapsulation structure is not easily broken during the bending process of the display panel, which improves the flexible organic light emission The bending performance of the diode display panel.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提出一种柔性有机发光二极管显示面板及其制造方法。所述柔性有机发光二极管显示面板包括一基板、一掺杂有软质金属的第一无机层、一有机层及一掺杂有软质金属的第二无机层。所述基板包括柔性底板与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管器件。所述掺杂有软质金属的第一无机层设置在所述基板上。所述有机层设置在所述第一无机层上。所述掺杂有软质金属的第二无机层设置在所述有机层上。本发明可以提升柔性有机发光二极管显示面板的弯折性能。

Description

柔性有机发光二极管显示面板及其制造方法 技术领域
本发明涉及显示技术领域，特别涉及一种柔性有机发光二极管显示面板及及其制造方法。
 背景技术
柔性显示是未来显示技术的发展趋势。
薄膜封装(thin film encapsulation，TFE)技术可以使OLED显示装置不再需要使用刚性的玻璃盖板，并可以使OLED显示装置实现柔性弯折，因此薄膜封装技术是目前多种封装技术中广泛使用的技术。
一般而言，薄膜封装技术是采用形成有机层/无机层的多层封装结构来保护OLED器件。其中，无机层可以有效阻止水、氧的入侵，延长OLED显示面板的使用寿命；有机层则可以使水、氧入侵到OLED器件内的扩散路径不连续，并可以消除应力。然而，多层封装结构中的无机层无法承受过大的应力，无机层在显示面板的弯折过程中仍然容易断裂。无机层断裂会影响封装结构的封装效果。
因此，有必要提供一种柔性有机发光二极管显示面板及其制造方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种柔性有机发光二极管显示面板及可弯折的显示装置，以解决现有技术中柔性有机发光二极管显示面板的弯折性能无法进一步提升的技术问题。
 技术解决方案
为解决上述技术问题，本发明提供一种柔性有机发光二极管显示面板。所述包括一基板、一掺杂有软质金属的第一无机层、一有机层及一掺杂有软质金属的第二无机层。所述基板包括柔性底板与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管器件。所述掺杂有软质金属的第一无机层设置在所述基板上。所述有机层设置在所述第一无机层上。所述掺杂有软质金属的第二无机层设置在所述有机层上。
在本发明实施例提供的柔性有机发光二极管显示面板中，所述有机层的材质为丙烯酸树脂或环氧树脂，所述掺杂有软质金属的第一无机层与所述掺杂有软质金属的第二无机层包含无机材料及软质金属，所述软质金属是镍、铜或银。
在本发明实施例提供的柔性有机发光二极管显示面板中，所述无机材料是选自SiN X、SiO X、SiON X、SiCN X、Al 2O 3及其任意组合的其中一个。
在本发明实施例提供的柔性有机发光二极管显示面板中，所述软质金属在所述第一无机层与所述第二无机层中的掺杂浓度为原子百分比在8%至40%之间。
在本发明实施例提供的柔性有机发光二极管显示面板中，所述第一无机层与所述第二无机层的厚度在0.5微米至1微米之间，所述有机层的厚度在3微米至8微米之间。
本发明还提供一种制造柔性有机发光二极管显示面板的方法。所述方法包括：提供一基板，所述基板包括柔性底板与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管器件；形成一掺杂有软质金属的第一无机层在所述基板上；形成一有机层在所述第一无机层上；及形成一掺杂有软质金属的第二无机层在所述有机层上。
在本发明实施例提供的制造柔性有机发光二极管显示面板的方法中，所述有机层的材质为丙烯酸树脂或环氧树脂，所述掺杂有软质金属的第一无机层与所述掺杂有软质金属的第二无机层包含无机材料及软质金属，所述软质金属是镍、铜或银。
在本发明实施例提供的制造柔性有机发光二极管显示面板的方法中，所述无机材料是选自SiN X、SiO X、SiON X、SiCN X、Al 2O 3及其任意组合的其中一个。
在本发明实施例提供的制造柔性有机发光二极管显示面板的方法中，所述软质金属在所述第一无机层与所述第二无机层中的掺杂浓度为原子百分比在8%至40%之间。
在本发明实施例提供的制造柔性有机发光二极管显示面板的方法中，所述第一无机层与所述第二无机层的厚度在0.5微米至1微米之间，所述有机层的厚度在3微米至8微米之间。
 有益效果
相较于现有技术，本发明提出一种柔性有机发光二极管显示面板及其制造方法。通过在薄膜封装结构的无机层中掺杂软质金属，可以提高薄膜封装结构的无机层的韧性，薄膜封装结构的无机层在显示面板的弯折过程中就不容易断裂，提升了柔性有机发光二极管显示面板的弯折性能。
 附图说明
图1显示本发明实施例提供的一种柔性有机发光二极管(organic light emitting diode，OLED)显示面板的剖面侧视图。
图2显示本发明实施例提供的一种制造柔性有机发光二极管显示面板的方法的流程图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
本发明实施例提供了一种柔性有机发光二极管显示面板，以下对其进行详细说明。
请参照图1，其显示本发明实施例提供的一种柔性有机发光二极管(organic light emitting diode，OLED)显示面板的剖面侧视图。
所述柔性有机发光二极管显示面板1000包括一基板101、一掺杂有软质金属的第一无机层201及一掺杂有软质金属的第二无机层202。所述掺杂有软质金属的第一无机层201设置在所述基板101上。所述有机层301设置在所述第一无机层201上。所述掺杂有软质金属的第二无机层202设置在所述有机层301上。
为了使显示面板1000具有柔性，所述基板101包括柔性底板(未示出)与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管(organic light emitting diode，OLED)器件(未示出)。柔性底板是由柔性的材料制成，例如，底板的材质可以是聚酰亚胺(polyimide，PI)或聚对苯二甲酸乙二酯（(polyethylene terephthalate，PET)。OLED器件由下至上依次主要包含阳极、空穴注入层、空穴传输层、电子阻挡层、发光层、电子传输层、电子注入层、阴极、光耦合输出层、及氟化锂(LiF)层等。薄膜晶体管阵列用于控制OLED器件是否发光。薄膜晶体管阵列可以在阳极与阴极之间形成一电场，藉此将电洞从阳极经由空穴注入层和空穴传输层注入到发光层，及将电子从阴极经由电子注入层和电子传输层注入到发光层，电洞与电子在发光层中复合，而发出可见光。所述光耦合输出层的材质为空穴型有机小分子材料，可降低光在OLED器件内部的损耗，进一步提升OLED器件的发光效率。所述氟化锂(LiF)层可起保护作用，避免后续的薄膜封装层形成过程期间有机层受到破坏。
所述第一无机层201设置在所述基板101上；亦即，所述第一无机层201直接形成在氟化锂(LiF)层上。或者，在其他实施例中，OLED器件可以不包括氟化锂(LiF)层或光耦合输出层，因此所述第一无机层201是直接形成在光耦合输出层或阴极上。
所述第一无机层201、所述有机层301与所述第二无机层202共同构成一薄膜封装层500，薄膜封装层500是用来保护OLED器件，避免OLED器件受到物理性刮伤且避免外界物质入侵到OLED器件内。
所述有机层301的材质可以为丙烯酸树脂或环氧树脂。该等有机材料可以使水、氧入侵到OLED器件内的扩散路径不连续，并可以消除应力。
所述掺杂有软质金属的第一无机层201与所述掺杂有软质金属的第二无机层202包含无机材料及软质金属。所述无机材料是选自SiN X、SiO X、SiON X、SiCN X、Al 2O 3及其任意组合的其中一个。所述掺杂有软质金属的第一无机层201与所述掺杂有软质金属的第二无机层202中的无机材料可以有效阻止水、氧的入侵，延长OLED显示面板的使用寿命。
根据本发明，无机层中掺杂有软质金属是通过以软质金属和无机材料作为初始材料来同时进行薄膜沉积而得到。所述软质金属可以是镍、铜或银。通过在无机层中掺杂有所述软质金属，可以提升无机层的韧性，其中以掺杂镍所能提升无机层的韧性的效果最显着。由于软质金属原子在介质中的扩散速度快，在形成所述掺杂有软质金属的第一无机层201与所述掺杂有软质金属的第二无机层202的薄膜沉积过程中，软质金属原子可以很快速地扩散到晶粒边界，并抑制晶粒的生长。因此，相较于没有掺杂软质金属的无机层的形成，掺杂有软质金属的无机层的形成具有较小的晶粒尺寸。这种尺寸效应可以提高最终形成的无机层的薄膜韧性。薄膜封装结构的无机层的韧性提高了，因此薄膜封装结构的无机层在显示面板的弯折过程中就不容易断裂，提升了柔性有机发光二极管显示面板的弯折性能。
另外，随着软质金属在无机层中的含量增加，无机层的韧性也随之提高。为了一方面能够提高无机层的韧性，另一方面又能够达到良好的阻水阻氧的功效，可以控制薄膜沉积工艺条件，使得所述软质金属在所述第一无机层201与所述第二无机层202中的掺杂浓度为原子百分比在8%至40%之间，所述第一无机层201与所述第二无机层202的厚度在0.5微米至1微米之间，所述有机层301的厚度在3微米至8微米之间。这样的软质金属掺杂浓度范围及厚度范围选择是被调控以使得所述第一无机层201与所述第二无机层202可以有效阻止水氧入侵，并使得所述第一无机层201与所述第二无机层202具有韧性、不容易断裂。
请参照图2，其显示本发明实施例提供的一种制造柔性有机发光二极管显示面板的方法的流程图。本发明还提供一种制造柔性有机发光二极管显示面板1000的方法。所述方法用于形成图1的柔性有机发光二极管显示面板。所述方法包括以下步骤。
在步骤S100中，提供一基板101，所述基板包括柔性底板与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管器件。
具体的，为了使显示面板1000具有柔性，所述基板101包括柔性底板(未示出)与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管(organic light emitting diode，OLED)器件(未示出)。柔性底板是由柔性的材料制成，例如，底板的材质可以是聚酰亚胺(polyimide，PI)或聚对苯二甲酸乙二酯（(polyethylene terephthalate，PET)。OLED器件由下至上依次主要包含阳极、空穴注入层、空穴传输层、电子阻挡层、发光层、电子传输层、电子注入层、阴极、光耦合输出层、及氟化锂(LiF)层等。薄膜晶体管阵列用于控制OLED器件是否发光。薄膜晶体管阵列可以在阳极与阴极之间形成一电场，藉此将电洞从阳极经由空穴注入层和空穴传输层注入到发光层，及将电子从阴极经由电子注入层和电子传输层注入到发光层，电洞与电子在发光层中复合，而发出可见光。所述光耦合输出层的材质为空穴型有机小分子材料，可降低光在OLED器件内部的损耗，进一步提升OLED器件的发光效率。所述氟化锂(LiF)层可起保护作用，避免后续的薄膜封装层形成过程期间有机层受到破坏。
在步骤S200中，形成一掺杂有软质金属的第一无机层201在所述基板101上。
具体的，所述掺杂有软质金属的第一无机层201是通过以软质金属和无机材料作为初始材料来同时进行薄膜沉积，例如磁控溅射，而得到。所述无机材料是选自SiN X、SiO X、SiON X、SiCN X、Al 2O 3及其任意组合的其中一个。可以控制薄膜沉积工艺条件，使得所述软质金属在所述第一无机层201中的掺杂浓度为原子百分比在8%至40%之间，并且所述第一无机层201的厚度在0.5微米至1微米之间。
在步骤S300中，形成一有机层301在所述第一无机层201上。
具体的，可以利用化学气相沉积技术(chemical vapor deposition，CVD)来形成所述有机层301。所形成的有机层301的材质为丙烯酸树脂或环氧树脂，这样的材质可以使水、氧入侵到OLED器件内的扩散路径不连续，并可以消除应力。
在步骤S400中，形成一掺杂有软质金属的第二无机层202在所述有机层301上。
具体的，所述掺杂有软质金属的第二无机层202是通过以软质金属和无机材料作为初始材料来同时进行薄膜沉积，例如磁控溅射，而得到。所述无机材料是选自SiN X、SiO X、SiON X、SiCN X、Al 2O 3及其任意组合的其中一个。可以控制薄膜沉积工艺条件，使得所述软质金属在所述第二无机层202中的掺杂浓度为原子百分比在8%至40%之间，并且所述第二无机层202的厚度在0.5微米至1微米之间。
相较于现有技术，本发明提出一种柔性有机发光二极管显示面板及其制造方法。通过在薄膜封装结构的无机层中掺杂软质金属，可以提高薄膜封装结构的无机层的韧性，薄膜封装结构的无机层在显示面板的弯折过程中就不容易断裂，提升了柔性有机发光二极管显示面板的弯折性能。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种柔性有机发光二极管显示面板，包括：
    一基板，所述基板包括柔性底板与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管器件；
    一掺杂有软质金属的第一无机层，设置在所述基板上；
    一有机层，设置在所述第一无机层上；及
    一掺杂有软质金属的第二无机层，设置在所述有机层上；
    其中，所述软质金属是镍、铜或银。
  2. 根据权利要求1所述的柔性有机发光二极管显示面板，其中，所述有机层的材质为丙烯酸树脂或环氧树脂，所述掺杂有软质金属的第一无机层与所述掺杂有软质金属的第二无机层包含无机材料及软质金属。
  3. 根据权利要求2所述的柔性有机发光二极管显示面板，其中，所述无机材料是选自SiN X、SiO X、SiON X、SiCN X、Al 2O 3及其任意组合的其中一个。
  4. 根据权利要求2所述的柔性有机发光二极管显示面板，其中，所述软质金属在所述第一无机层与所述第二无机层中的掺杂浓度为原子百分比在8%至40%之间。
  5. 根据权利要求1所述的柔性有机发光二极管显示面板，其中，所述第一无机层与所述第二无机层的厚度在0.5微米至1微米之间，所述有机层的厚度在3微米至8微米之间。
  6. 一种柔性有机发光二极管显示面板，包括：
    一基板，所述基板包括柔性底板与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管器件；
    一掺杂有软质金属的第一无机层，设置在所述基板上；
    一有机层，设置在所述第一无机层上；及
    一掺杂有软质金属的第二无机层，设置在所述有机层上。
  7. 根据权利要求6所述的柔性有机发光二极管显示面板，其中，所述有机层的材质为丙烯酸树脂或环氧树脂，所述掺杂有软质金属的第一无机层与所述掺杂有软质金属的第二无机层包含无机材料及软质金属，所述软质金属是镍、铜或银。
  8. 根据权利要求7所述的柔性有机发光二极管显示面板，其中，所述无机材料是选自SiN X、SiO X、SiON X、SiCN X、Al 2O 3及其任意组合的其中一个。
  9. 根据权利要求7所述的柔性有机发光二极管显示面板，其中，所述软质金属在所述第一无机层与所述第二无机层中的掺杂浓度为原子百分比在8%至40%之间。
  10. 根据权利要求6所述的柔性有机发光二极管显示面板，其中，所述第一无机层与所述第二无机层的厚度在0.5微米至1微米之间，所述有机层的厚度在3微米至8微米之间。
  11. 一种制造柔性有机发光二极管显示面板的方法，包括：
    提供一基板，所述基板包括柔性底板与依次设置在柔性底板上的薄膜晶体管阵列和有机发光二极管器件；
    形成一掺杂有软质金属的第一无机层在所述基板上；
    形成一有机层在所述第一无机层上；及
    形成一掺杂有软质金属的第二无机层在所述有机层上。
  12. 根据权利要求11所述的制造柔性有机发光二极管显示面板的方法，其中，所述有机层的材质为丙烯酸树脂或环氧树脂，所述掺杂有软质金属的第一无机层与所述掺杂有软质金属的第二无机层包含无机材料及软质金属，所述软质金属是镍、铜或银。
  13. 根据权利要求12所述的制造柔性有机发光二极管显示面板的方法，其中，所述无机材料是选自SiN X、SiO X、SiON X、SiCN X、Al 2O 3及其任意组合的其中一个。
  14. 根据权利要求12所述的制造柔性有机发光二极管显示面板的方法，其中，所述软质金属在所述第一无机层与所述第二无机层中的掺杂浓度为原子百分比在8%至40%之间。
  15. 根据权利要求11所述的制造柔性有机发光二极管显示面板的方法，其中，所述第一无机层与所述第二无机层的厚度在0.5微米至1微米之间，所述有机层的厚度在3微米至8微米之间。
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