WO2020237750A1 - Oled基板 - Google Patents

Oled基板 Download PDF

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Publication number
WO2020237750A1
WO2020237750A1 PCT/CN2019/091751 CN2019091751W WO2020237750A1 WO 2020237750 A1 WO2020237750 A1 WO 2020237750A1 CN 2019091751 W CN2019091751 W CN 2019091751W WO 2020237750 A1 WO2020237750 A1 WO 2020237750A1
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WIPO (PCT)
Prior art keywords
layer
insulating layer
light sensor
anode
gate insulating
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PCT/CN2019/091751
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English (en)
French (fr)
Inventor
欧阳齐
郑敏
周阳
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武汉华星光电半导体显示技术有限公司
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Priority to US16/771,227 priority Critical patent/US20210408187A1/en
Publication of WO2020237750A1 publication Critical patent/WO2020237750A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0264—Details of the structure or mounting of specific components for a camera module assembly
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to the field of display technology, in particular to an OLED substrate.
  • OLED Organic Light Emitting Display
  • OLED has self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, close to 180° viewing angle, wide operating temperature range, and can realize flexible display and Large-area full-color display and many other advantages are recognized by the industry as the display device with the most potential for development.
  • OLED can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED) are two categories, namely direct addressing and thin film transistor matrix addressing.
  • PMOLED Passive Matrix OLED
  • AMOLED Active Matrix OLED
  • AMOLED has pixels arranged in an array, is an active display type, has high luminous efficiency, and is generally used as a high-definition large-size display device.
  • OLED devices usually include: a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light emitting layer provided on the hole transport layer, An electron transport layer on the light-emitting layer, an electron injection layer provided on the electron transport layer, and a cathode provided on the electron injection layer.
  • the light-emitting principle of OLED devices is that semiconductor materials and organic light-emitting materials are driven by an electric field to cause light emission through carrier injection and recombination.
  • OLED devices usually use indium tin oxide (ITO) electrodes and metal electrodes as the anode and cathode of the device, respectively.
  • ITO indium tin oxide
  • Electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer respectively, and meet in the light-emitting layer to form excitons and excite light-emitting molecules, the latter emit visible light through radiation relaxation.
  • the distance between the anode connection hole 41' of the OLED substrate in the prior art and the light sensor placement area 1021' is relatively short, resulting in The area of the light sensor placement area 1021' is very small, so the shape of the light sensor placement area 1021' can only be set to an irregular shape that approximates a triangle.
  • the light sensor of the camera module is subsequently placed in the light sensor placement area 1021', Insufficient light throughput leads to a decrease in the amount of light received by the camera module, which directly affects the photographic quality of electronic equipment. Therefore, it is necessary to improve the OLED device to improve the photographing quality of the camera module.
  • the purpose of the present invention is to provide an OLED substrate, which can increase the area of the light sensor placement area, thereby improving the shooting quality of the camera module.
  • the present invention provides an OLED substrate, which is applied to an electronic device with a camera module, and includes: a plurality of pixel areas distributed at intervals; each pixel area includes an active area and a surrounding area Inactive area
  • the active region includes: a base substrate, a TFT layer provided on the base substrate, a flat layer provided on the TFT layer, and an anode provided on the flat layer;
  • the anode connection hole of the flat layer is in contact with the TFT layer;
  • the non-active area is provided with a light sensor placement area spaced apart from the anode connection hole; the light sensor placement area is used to place the light sensor of the camera module.
  • the distance between the light sensor placement area and the anode connection hole is greater than 2 microns.
  • the shape of the light sensor placement area is a regular shape.
  • the TFT layer includes an active layer provided on the base substrate, a first gate insulating layer covering the base substrate and the active layer, and a first gate insulating layer provided on the first gate insulating layer.
  • the gate, the second gate insulating layer covering the first gate insulating layer and the first gate, the second gate provided on the second gate insulating layer, the insulating covering the second gate The interlayer insulating layer of the second gate and the second gate electrode and the source electrode and the drain electrode provided on the interlayer insulating layer.
  • the source electrode is in contact with the active layer through a source connection hole penetrating the interlayer insulating layer, the second gate insulating layer and the first gate insulating layer.
  • the drain electrode is in contact with the active layer through a drain connection hole penetrating the interlayer insulating layer, the second gate insulating layer and the first gate insulating layer.
  • the anode is in contact with the drain through an anode connection hole penetrating the flat layer.
  • the OLED substrate further includes a buffer layer provided between the base substrate and the TFT layer.
  • the OLED substrate further includes a pixel definition layer arranged on the flat layer and the anode; the pixel definition layer is provided with a through hole exposing the anode.
  • the material of the base substrate is polyimide.
  • the OLED substrate of the present invention includes: a plurality of pixel areas distributed at intervals; each pixel area includes an active area and a non-active area surrounding the active area; the active area includes: a substrate A base substrate, a TFT layer provided on the base substrate, a flat layer provided on the TFT layer, and an anode provided on the flat layer; the anode is connected to the TFT through an anode connection hole penetrating the flat layer Layer contact;
  • the non-active area is provided with a light sensor placement area spaced apart from the anode connection hole, which can increase the area of the light sensor placement area.
  • Figure 1 is a schematic diagram of an existing OLED substrate
  • Figure 2 is a top view of a conventional OLED substrate
  • FIG. 3 is a schematic diagram of the OLED substrate of the present invention.
  • Fig. 4 is a top view of the OLED substrate of the present invention.
  • the present invention provides an OLED substrate, which is applied to an electronic device with a camera module, and includes: a plurality of pixel areas 100 distributed at intervals; each pixel area 100 includes an active area 101 and a surrounding area The non-active area 102 of the active area 101;
  • the active region 101 includes: a base substrate 10, a TFT layer 20 provided on the base substrate 10, a flat layer 30 provided on the TFT layer 20, and an anode provided on the flat layer 30 40;
  • the anode 40 is in contact with the TFT layer 20 through an anode connection hole 41 that penetrates the flat layer 30;
  • the non-active area 102 is provided with a light sensor placement area 1021 spaced apart from the anode connection hole 41; the light sensor placement area 1021 is used to place the light sensor of the camera module.
  • the distance between the light sensor placement area 1021 and the anode connection hole 41 is greater than 2 microns.
  • the shape of the light sensor placement area 1021 is a regular shape, for example, the regular shape is a shape such as a circle, a rectangle, a regular pentagon or a regular hexagon.
  • the regular shape is a shape such as a circle, a rectangle, a regular pentagon or a regular hexagon.
  • the photosensor placement area 1021 and the anode connection hole 41 are spaced apart, that is, the anode connection hole 41 is positioned away from the photosensor placement area 1021 relative to the anode connection hole 41' in the prior art.
  • placing the light sensor of the camera module in the light sensor placement area 1021 can increase the light receiving area of the light sensor and improve the shooting quality of the camera module.
  • the TFT layer 20 includes an active layer 21 provided on the base substrate 10, a first gate insulating layer 22 covering the base substrate 10 and the active layer 21, and a first gate insulating layer 22 provided on the A first gate 23 on a gate insulating layer 22, a second gate insulating layer 24 covering the first gate insulating layer 22 and the first gate 23, and a second gate insulating layer 24 disposed on the second gate insulating layer 24
  • the source electrode 27 is in contact with the active layer 21 through a source connection hole 271 passing through the interlayer insulating layer 26, the second gate insulating layer 24 and the first gate insulating layer 22.
  • the drain 28 is in contact with the active layer 21 through a drain connection hole 281 passing through the interlayer insulating layer 26, the second gate insulating layer 24 and the first gate insulating layer 22.
  • the anode 40 is in contact with the drain 28 through an anode connection hole 41 penetrating the flat layer 30.
  • the OLED substrate further includes: a buffer layer 11 provided between the base substrate 10 and the TFT layer 20.
  • the buffer layer 11 is formed on the base substrate 10 by chemical vapor deposition (CVD).
  • the OLED substrate further includes a pixel defining layer 50 disposed on the flat layer 30 and the anode 40; the pixel defining layer 50 is provided with a through hole 51 exposing the anode 40.
  • the OLED substrate further includes a hole injection layer (not shown) provided on the anode 40, a hole transport layer (not shown) provided on the hole injection layer, and a hole transport layer (not shown) provided on the hole transport layer.
  • the material of the base substrate 10 is polyimide (PI), so that the OLED substrate is a flexible OLED substrate.
  • PI polyimide
  • the manufacturing process of the OLED substrate is: forming a base substrate 10 by slit coating, forming an active layer 21 on the base substrate 10 by a chemical vapor deposition method; forming a covering substrate 10 by a chemical vapor deposition method.
  • the source electrode 27 and the drain electrode 28 are in contact with the active layer 21 through the
  • the present invention is compared to the anode connection hole 41' in the prior art Move the position away from the photosensor placement area 1021 a certain distance (for example, 2-3 microns) to etch the flat layer 30; the flat layer 30 is formed on the flat layer 30 through the anode connection hole 41 and the drain 28 through the physical vapor deposition method.
  • Anode 40 is compared to the anode connection hole 41' in the prior art Move the position away from the photosensor placement area 1021 a certain distance (for example, 2-3 microns) to etch the flat layer 30; the flat layer 30 is formed on the flat layer 30 through the anode connection hole 41 and the drain 28 through the physical vapor deposition method.
  • Anode 40 is compared to the anode connection hole 41' in the prior art Move the position away from the photosensor placement area 1021 a certain distance (for example, 2-3 microns) to etch the flat layer 30; the flat layer 30 is formed on the flat layer 30 through the anode connection hole 41 and the drain 28 through the physical vapor
  • the OLED substrate of the present invention includes: a plurality of pixel areas distributed at intervals; each pixel area includes an active area and a non-active area surrounding the active area; the active area includes: a substrate A substrate, a TFT layer provided on the base substrate, a flat layer provided on the TFT layer, and an anode provided on the flat layer; the anode is connected to the TFT layer through an anode connection hole penetrating the flat layer Contact; The non-active area is provided with a light sensor placement area spaced apart from the anode connection hole, which can increase the area of the light sensor placement area.
  • the OLED substrate is applied to electronic equipment with a camera module
  • the camera module The light sensor is placed in the light sensor placement area, which can increase the light receiving area of the light sensor, thereby improving the shooting quality of the camera module.

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Abstract

本发明提供一种OLED基板。该OLED基板包括：间隔分布的多个像素区域；每个像素区域包括有源区以及包围所述有源区的非有源区；所述有源区包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层以及设于所述平坦层上的阳极；所述阳极通过一贯穿平坦层的阳极连接孔与TFT层接触；所述非有源区上设有一与阳极连接孔间隔设置的光传感器放置区，可以增加光传感器放置区的面积，当OLED基板应用于带摄像头模组的电子设备时，将摄像头模组的光传感器放置在光传感器放置区中，可以增加光传感器的受光面积，进而提高摄像头模组的拍摄质量。

Description

OLED基板 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED基板。
 背景技术
有机发光二极管显示装置（Organic Light Emitting Display，OLED）具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED（Passive Matrix OLED，PMOLED）和有源矩阵型OLED（Active Matrix OLED，AMOLED）两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡（ITO）电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
请参阅图1和图2，当OLED器件应用于带摄像头模组的电子设备时，现有技术中的OLED基板的阳极连接孔41’与光传感器放置区1021’之间的距离较近，导致光传感器放置区1021’的面积很小，因此光传感器放置区1021’的形状只能设置成近似三角形的不规则形状，后续将摄像头模组的光传感器放置在光传感器放置区1021’中时，光通过量不足，从而导致摄像头模组接收到的光量变少，直接影响电子设备的照相质量，因此，需要对OLED器件进行改善以提高摄像头模组的拍摄质量。
 技术问题
本发明的目的在于提供一种OLED基板，可以增加光传感器放置区的面积，从而提高摄像头模组的拍摄质量。
 技术解决方案
为实现上述目的，本发明提供了一种OLED基板，应用于带摄像头模组的电子设备，包括：间隔分布的多个像素区域；每个像素区域包括有源区以及包围所述有源区的非有源区；
所述有源区包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层以及设于所述平坦层上的阳极；所述阳极通过一贯穿平坦层的阳极连接孔与TFT层接触；
所述非有源区上设有一与阳极连接孔间隔设置的光传感器放置区；所述光传感器放置区用于放置摄像头模组的光传感器。
所述光传感器放置区与阳极连接孔之间的距离大于2微米。
所述光传感器放置区的形状为规则形状。
所述TFT层包括设于所述衬底基板上的有源层、覆盖所述衬底基板和有源层的第一栅极绝缘层、设于所述第一栅极绝缘层上的第一栅极、覆盖所述第一栅极绝缘层和第一栅极的第二栅极绝缘层、设于所述第二栅极绝缘层上的第二栅极、覆盖所述第二栅极绝缘层和第二栅极的层间绝缘层以及设于所述层间绝缘层上的源极和漏极。
所述源极通过一贯穿层间绝缘层、第二栅极绝缘层和第一栅极绝缘层的源极连接孔与有源层接触。
所述漏极通过一贯穿层间绝缘层、第二栅极绝缘层和第一栅极绝缘层的漏极连接孔与有源层接触。
所述阳极通过一贯穿平坦层的阳极连接孔与漏极接触。
所述OLED基板还包括设于所述衬底基板与TFT层之间的缓冲层。
所述OLED基板还包括设于所述平坦层和阳极上的像素定义层；所述像素定义层中设有暴露出阳极的通孔。
所述衬底基板的材料为聚酰亚胺。
 有益效果
本发明的有益效果：本发明的OLED基板包括：间隔分布的多个像素区域；每个像素区域包括有源区以及包围所述有源区的非有源区；所述有源区包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层以及设于所述平坦层上的阳极；所述阳极通过一贯穿平坦层的阳极连接孔与TFT层接触；所述非有源区上设有一与阳极连接孔间隔设置的光传感器放置区，可以增加光传感器放置区的面积，当OLED基板应用于带摄像头模组的电子设备时，将摄像头模组的光传感器放置在光传感器放置区中，可以增加光传感器的受光面积，进而提高摄像头模组的拍摄质量。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的OLED基板的示意图；
图2为现有的OLED基板的俯视图；
图3为本发明的OLED基板的示意图；
图4为本发明的OLED基板的俯视图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3和图4，本发明提供一种OLED基板，应用于带摄像头模组的电子设备，包括：间隔分布的多个像素区域100；每个像素区域100包括有源区101以及包围所述有源区101的非有源区102；
所述有源区101包括：衬底基板10、设于所述衬底基板10上的TFT层20、设于所述TFT层20上的平坦层30以及设于所述平坦层30上的阳极40；所述阳极40通过一贯穿平坦层30的阳极连接孔41与TFT层20接触；
所述非有源区102上设有一与阳极连接孔41间隔设置的光传感器放置区1021；所述光传感器放置区1021用于放置摄像头模组的光传感器。
具体的，所述光传感器放置区1021与阳极连接孔41之间的距离大于2微米。
具体的，所述光传感器放置区1021的形状为规则形状，例如该规则形状为圆形、矩形、正五边形或正六边形等形状。当OLED基板应用于带摄像头模组的电子设备时，将摄像头模组的光传感器放置在光传感器放置区1021，可以增加光传感器的受光面积，提高摄像头模组的拍摄质量。
需要说明的是，本发明通过将光传感器放置区1021与阳极连接孔41间隔设置，也就是将阳极连接孔41相对于现有技术中的阳极连接孔41’的位置朝远离光传感器放置区1021的方向移动一定的距离（例如2-3微米），从而增加光传感器放置区1021的面积，使光传感器放置区1021的形状能够设置成规则形状，进而当OLED基板应用于带摄像头模组的电子设备时，将摄像头模组的光传感器放置在光传感器放置区1021，可以增加光传感器的受光面积，提高摄像头模组的拍摄质量。
具体的，所述TFT层20包括设于所述衬底基板10上的有源层21、覆盖所述衬底基板10和有源层21的第一栅极绝缘层22、设于所述第一栅极绝缘层22上的第一栅极23、覆盖所述第一栅极绝缘层22和第一栅极23的第二栅极绝缘层24、设于所述第二栅极绝缘层24上的第二栅极25、覆盖所述第二栅极绝缘层24和第二栅极25的层间绝缘层26以及设于所述层间绝缘层26上的源极27和漏极28。
所述源极27通过一贯穿层间绝缘层26、第二栅极绝缘层24和第一栅极绝缘层22的源极连接孔271与有源层21接触。
所述漏极28通过一贯穿层间绝缘层26、第二栅极绝缘层24和第一栅极绝缘层22的漏极连接孔281与有源层21接触。
具体的，所述阳极40通过一贯穿平坦层30的阳极连接孔41与漏极28接触。
具体的，所述OLED基板还包括：设于所述衬底基板10与TFT层20之间的缓冲层11。
具体的，通过化学气相沉积法（CVD）在所述衬底基板10上形成缓冲层11。
具体的，所述OLED基板还包括设于所述平坦层30和阳极40上的像素定义层50；所述像素定义层50中设有暴露出阳极40的通孔51。
进一步的，所述OLED基板还包括设于阳极40上的空穴注入层（未图示）、设于空穴注入层上的空穴传输层（未图示）、设于空穴传输层上的发光层（未图示）、设于发光层上的电子传输层（未图示）、设于电子传输层上的电子注入层（未图示）以及设于电子注入层上的阴极（未图示），从而构成完整的OLED器件。
具体的，所述衬底基板10的材料为聚酰亚胺（PI），使该OLED基板为柔性OLED基板。
具体的，所述OLED基板的制作过程为：通过狭缝涂布形成衬底基板10，通过化学气相沉积法在衬底基板10上形成有源层21；通过化学气相沉积法形成覆盖所述衬底基板10和有源层21的第一栅极绝缘层22；通过物理气相沉积法（PVD）在第一栅极绝缘层22上形成第一栅极23；通过化学气相沉积法形成覆盖所述第一栅极绝缘层22和第一栅极23的第二栅极绝缘层24；通过物理气相沉积法在第二栅极绝缘层24上形成第二栅极25；通过化学气相沉积法形成覆盖所述第二栅极绝缘层24和第二栅极25的层间绝缘层26；通过光刻工艺对层间绝缘层26、第二栅极绝缘层24和第一栅极绝缘层22进行蚀刻，形成贯穿层间绝缘层26、第二栅极绝缘层24和第一栅极绝缘层22的源极连接孔271和漏极连接孔281；通过物理气相沉积法在层间绝缘层26上形成分别通过源极连接孔271和漏极连接孔281与有源层21接触的源极27和漏极28；通过涂布形成覆盖所述层间绝缘层26、源极27和漏极28的平坦层30；通过光刻工艺对平坦层30进行蚀刻，形成贯穿平坦层30并暴露出漏极28的阳极连接孔41，在蚀刻时，本发明相对于现有技术中的阳极连接孔41’的位置朝远离光传感器放置区1021的方向移动一定的距离（例如2-3微米）对平坦层30进行蚀刻；通过物理气相沉积法在平坦层30上形成通过阳极连接孔41与漏极28接触的阳极40。
综上所述，本发明的OLED基板包括：间隔分布的多个像素区域；每个像素区域包括有源区以及包围所述有源区的非有源区；所述有源区包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层以及设于所述平坦层上的阳极；所述阳极通过一贯穿平坦层的阳极连接孔与TFT层接触；所述非有源区上设有一与阳极连接孔间隔设置的光传感器放置区，可以增加光传感器放置区的面积，当OLED基板应用于带摄像头模组的电子设备时，将摄像头模组的光传感器放置在光传感器放置区中，可以增加光传感器的受光面积，进而提高摄像头模组的拍摄质量。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种OLED基板，应用于带摄像头模组的电子设备，包括：间隔分布的多个像素区域；每个像素区域包括有源区以及包围所述有源区的非有源区；
    所述有源区包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层以及设于所述平坦层上的阳极；所述阳极通过一贯穿平坦层的阳极连接孔与TFT层接触；
    所述非有源区上设有一与阳极连接孔间隔设置的光传感器放置区；所述光传感器放置区用于放置摄像头模组的光传感器。
  2. 如权利要求1所述的OLED基板，其中，所述光传感器放置区与阳极连接孔之间的距离大于2微米。
  3. 如权利要求1所述的OLED基板，其中，所述光传感器放置区的形状为规则形状。
  4. 如权利要求1所述的OLED基板，其中，所述TFT层包括设于所述衬底基板上的有源层、覆盖所述衬底基板和有源层的第一栅极绝缘层、设于所述第一栅极绝缘层上的第一栅极、覆盖所述第一栅极绝缘层和第一栅极的第二栅极绝缘层、设于所述第二栅极绝缘层上的第二栅极、覆盖所述第二栅极绝缘层和第二栅极的层间绝缘层以及设于所述层间绝缘层上的源极和漏极。
  5. 如权利要求4所述的OLED基板，其中，所述源极通过一贯穿层间绝缘层、第二栅极绝缘层和第一栅极绝缘层的源极连接孔与有源层接触。
  6. 如权利要求4所述的OLED基板，其中，所述漏极通过一贯穿层间绝缘层、第二栅极绝缘层和第一栅极绝缘层的漏极连接孔与有源层接触。
  7. 如权利要求4所述的OLED基板，其中，所述阳极通过一贯穿平坦层的阳极连接孔与漏极接触。
  8. 如权利要求1所述的OLED基板，还包括设于所述衬底基板与TFT层之间的缓冲层。
  9. 如权利要求1所述的OLED基板，还包括设于所述平坦层和阳极上的像素定义层；所述像素定义层中设有暴露出阳极的通孔。
  10. 如权利要求1所述的OLED基板，其中，所述衬底基板的材料为聚酰亚胺。
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