WO2020113893A1 - Oled显示面板 - Google Patents

Oled显示面板 Download PDF

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Publication number
WO2020113893A1
WO2020113893A1 PCT/CN2019/084066 CN2019084066W WO2020113893A1 WO 2020113893 A1 WO2020113893 A1 WO 2020113893A1 CN 2019084066 W CN2019084066 W CN 2019084066W WO 2020113893 A1 WO2020113893 A1 WO 2020113893A1
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WIPO (PCT)
Prior art keywords
sub
signal output
pixels
output unit
storage capacitor
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PCT/CN2019/084066
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English (en)
French (fr)
Inventor
赵凯祥
李迪
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/492,129 priority Critical patent/US20200219443A1/en
Publication of WO2020113893A1 publication Critical patent/WO2020113893A1/zh

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Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Definitions

  • the invention relates to the field of display technology, in particular to an OLED display panel.
  • flat panel display devices are widely used in mobile phones, TVs, personal digital assistants, digital cameras, notebook computers, desktops due to their advantages of high image quality, power saving, thin body, and wide range of applications.
  • Various consumer electronic products such as computers have become the mainstream in display devices.
  • Organic Light Emitting Display (Organic Light Emitting Display, OLED), because it also has self-illumination, no backlight, high contrast, thin thickness, wide viewing angle, fast response, can be used in flexible panels, wide temperature range, structure And the simple process and other excellent characteristics are considered to be the emerging application technology of the next generation flat panel display.
  • OLED Organic Light Emitting Display
  • OLED display devices generally include: a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light emitting layer provided on the hole transport layer, and a device An electron transport layer on the light-emitting layer, an electron injection layer provided on the electron transport layer, and a cathode provided on the electron injection layer.
  • the principle of light emission of an OLED display device is that semiconductor materials and organic light-emitting materials are driven by an electric field to cause light emission through carrier injection and recombination.
  • OLED display devices usually use ITO pixel electrodes and metal electrodes as the anode and cathode of the device, respectively.
  • electrons and holes are injected from the cathode and anode into the electron transport layer and hole transport layer, respectively.
  • the holes migrate to the light-emitting layer through the electron-transport layer and the hole-transport layer, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, which emit visible light after radiation relaxation.
  • large-size and high-resolution AMOLED display devices have gradually developed.
  • large-size AMOLED display devices also require a larger-size display panel and a larger number of pixels, and signals in the display panel.
  • the line length will become longer and longer, and the signal line resistance will also increase.
  • the signal applied to the signal line will cause a voltage drop (IR Drop), which causes the signal actually applied to each sub-pixel to deviate from the original signal, and eventually the sub-pixel brightness is insufficient, and the display uniformity of the display panel decreases.
  • IR Drop voltage drop
  • An object of the present invention is to provide an OLED display panel, which can improve the display uniformity of the display panel.
  • the present invention provides an OLED display panel, which includes multiple sub-pixels, multiple scan lines, multiple data lines, a scan signal output unit, and a data signal output unit;
  • each row of sub-pixels is provided with a scan line electrically connected to the row of sub-pixels
  • each column of sub-pixels is provided with a data line electrically connected to the column of sub-pixels
  • the scan signal The output unit is electrically connected to the plurality of scan lines
  • the data signal output unit is electrically connected to the plurality of data lines
  • Each sub-pixel includes a storage capacitor; in the same row of sub-pixels, the capacitance value of the storage capacitor of the sub-pixel further away from the scan signal output unit is larger; in the same column of sub-pixels, the distance from the data signal output The capacitance value of the storage capacitor of the sub-pixel further away from the cell is larger.
  • Each storage capacitor includes a first electrode plate and a second electrode plate arranged in parallel at intervals;
  • the spacing between the first electrode plate and the second electrode plate of the storage capacitors of all sub-pixels is equal;
  • the area of the first electrode plate and the second electrode plate of the storage capacitor of the sub-pixel further away from the scan signal output unit is larger;
  • the area where the first electrode plate and the second electrode plate of the storage capacitor of the sub-pixel further away from the data signal output unit are larger is larger.
  • Each sub-pixel also includes a switching thin film transistor, a driving thin film transistor, and an organic light emitting diode;
  • the gate of the switching thin-film transistor is electrically connected to the scanning line corresponding to the sub-pixel, the source is electrically connected to the data line corresponding to the sub-pixel, and the drain is electrically connected to the gate driving the thin-film transistor and the first electrode of the storage capacitor board;
  • the source of the driving thin film transistor is electrically connected to the second electrode plate of the storage capacitor and the power supply voltage, and the drain is electrically connected to the anode of the organic light emitting diode;
  • the cathode of the organic light emitting diode is grounded.
  • the gate of the switching thin film transistor, the gate of the driving thin film transistor, the scanning line and the first electrode plate of the storage capacitor are all located in the first metal layer;
  • the source electrode and the drain electrode of the switching thin film transistor, the source electrode and the drain electrode of the driving thin film transistor, the data line and the second electrode plate of the storage capacitor are all located in a second metal layer that is insulatingly stacked on the first metal layer.
  • the number of the scanning signal output unit is two, and the two ends of each scanning line are electrically connected to the two scanning signal output units respectively;
  • the storage capacitor capacitance of each sub-pixel gradually decreases from the center of the row of sub-pixels to both sides.
  • the number of the scanning signal output unit is one, and one end of each scanning line is electrically connected to the scanning signal output unit;
  • the capacitance value of the storage capacitor of each sub-pixel gradually increases from the end closer to the scan signal output unit to the end farther from the scan signal output unit.
  • the number of the data signal output unit is one, and one end of each data line is electrically connected to the data signal output unit;
  • the capacitance value of the storage capacitor of each sub-pixel gradually increases from the end closer to the data signal output unit to the end farther from the data signal output unit.
  • the first electrode plate and the second electrode plate of the storage capacitor are respectively formed through two photomask manufacturing processes.
  • the facing area of the first electrode plate and the second electrode plate of each storage capacitor is adjusted by adjusting the opening size of the photomask used in the photomask manufacturing process.
  • the materials of the first metal layer and the second metal layer are one or a combination of molybdenum, aluminum and copper.
  • the present invention provides an OLED display panel, which includes a plurality of sub-pixels, a plurality of scanning lines, a plurality of data lines, a scanning signal output unit and a data signal output unit; the plurality of sub-pixel arrays are arranged correspondingly Each row of sub-pixels is provided with a scan line electrically connected to the row of sub-pixels, corresponding to each column of sub-pixels is provided with a data line electrically connected to the column of sub-pixels, and the scan signal output unit is electrically connected to the plurality of scans Line, the data signal output unit is electrically connected to the plurality of data lines; each sub-pixel includes a storage capacitor; in the same row of sub-pixels, the storage capacitor of the sub-pixel further away from the scan signal output unit The larger the capacitance value of; in the same column of sub-pixels, the greater the storage capacitor capacitance value of the sub-pixel farther from the data signal output unit, the change in the storage capacitor capacitance value is used
  • FIG. 1 is a schematic diagram of a first embodiment of the OLED display panel of the present invention.
  • FIG. 2 is a schematic diagram of a second embodiment of the OLED display panel of the present invention.
  • FIG. 3 is a circuit diagram of sub-pixels in the OLED display panel of the present invention.
  • FIG. 5 is a driving thin film transistor of the OLED display panel of the present invention.
  • the present invention provides an OLED display panel, which includes a plurality of sub-pixels 10, a plurality of scan lines 20, a plurality of data lines 30, a scan signal output unit 40, and a data signal output unit 50.
  • the plurality of sub-pixels 10 are arranged in an array, the plurality of scan lines 20 and the plurality of data lines 30 are insulated and crossed to form a plurality of closed patterns, and the plurality of sub-pixels
  • the pixels 10 are respectively disposed in the plurality of closed patterns, corresponding to each row of sub-pixels 10 is provided with a scan line 20 electrically connected to the row of sub-pixels 10, and corresponding to each column of sub-pixels 20 is provided with an electrical connection with the column of sub-pixels 10
  • the scan signal output unit 40 is electrically connected to the plurality of scan lines 20, and the data signal output unit 50 is electrically connected to the plurality of data lines 30;
  • each sub-pixel 10 includes a storage capacitor C1; in the same row of sub-pixels 10, the capacitance value of the storage capacitor C1 of the sub-pixel 10 further away from the scan signal output unit 40 is larger; In the pixel 10, the capacitance value of the storage capacitor C1 of the sub-pixel 10 further away from the data signal output unit 50 is larger.
  • each sub-pixel 10 of the OLED display panel needs a driving thin film transistor T2 (Drive TFT) to drive the organic light emitting diode D1 to emit light
  • the storage capacitor C1 functions as a storage for controlling the driving thin film transistor
  • the data voltage turned on by T2 enables the driving thin film transistor T2 to be turned on smoothly, input current to the organic light emitting diode D1, and drive the organic light emitting diode D1 to emit light.
  • FIG. 5 the relationship between the gate voltage and the drain current of the N-type thin film transistor is shown in FIG. 5, and it can be seen from FIG. 5 that the higher the gate voltage, the larger the drain current.
  • the storage capacitor C1 of different sub-pixels 10 has different voltages after being charged, thereby changing the gate voltage of the driving thin film transistor T2, and then affecting
  • the current driving the drain of the thin film transistor T2 is set by setting a small storage capacitance in the sub-pixel with a small voltage drop and a large storage capacitance in the sub-pixel with a large voltage drop.
  • the number of the scan signal output unit 40 is one, and one end of each scan line 20 is electrically connected to the scan signal output unit 40;
  • the capacitance value of the storage capacitor C1 of each sub-pixel 10 goes from the end closer to the scan signal output unit 40 to the end farther from the scan signal output unit 40 Gradually increase
  • the number of the data signal output unit 50 is one, and one end of each data line 30 is electrically connected to the data signal output unit 50;
  • the capacitance value of the storage capacitor C1 of each sub-pixel 10 gradually increases from the end closer to the data signal output unit 50 to the end farther from the data signal output unit 50 Big.
  • the number of the scanning signal output unit 40 is two, and the two ends of each scanning line 20 are electrically connected to the two scanning signals, respectively Output unit 40;
  • the capacitance value of the storage capacitor C1 of each sub-pixel 10 gradually decreases from the center of the row of sub-pixels 10 to both sides;
  • the number of the data signal output unit 50 is one, and one end of each data line 30 is electrically connected to the data signal output unit 50;
  • the capacitance value of the storage capacitor C1 of each sub-pixel 10 gradually increases from the end closer to the data signal output unit 50 to the end farther from the data signal output unit 50 Big.
  • each storage capacitor C1 changes the capacitance value of each storage capacitor C1 by adjusting the area directly facing the electrode plate of each storage capacitor C1, wherein each storage capacitor C1 includes a first electrode plate 61 and a second electrode arranged in parallel at intervals Board 62;
  • the spacing between the first electrode plate 61 and the second electrode plate 62 of the storage capacitor C1 of all sub-pixels 10 is equal;
  • the area of the first electrode plate 61 and the second electrode plate 62 of the storage capacitor C1 of the sub-pixel 10 that is further away from the scan signal output unit 40 is larger;
  • the area of the first electrode plate 61 and the second electrode plate 62 of the storage capacitor C1 of the sub-pixel 10 that is further away from the data signal output unit 50 is larger.
  • each sub-pixel 10 of the OLED display panel includes: a switching thin film transistor T1, a driving thin film transistor T2, an organic light emitting diode D1 and Storage capacitor C1.
  • the gate 11 of the switching thin film transistor T1 is electrically connected to the scan line 20 corresponding to the sub-pixel 10, the source 12 is electrically connected to the data line 30 corresponding to the sub-pixel 10, and the drain 13 is electrically connected to the driving thin film transistor
  • the source electrode 22 of the driving thin film transistor T2 is electrically connected to the second electrode plate 62 of the storage capacitor C1 and the power supply voltage Vdd, and the drain electrode 23 is electrically connected to the anode 31 of the organic light emitting diode D1;
  • the cathode 33 of the organic light emitting diode D1 is grounded.
  • FIG. 4 the specific structure of the OLED display panel is shown in FIG. 4, which includes a substrate 1, a first metal layer M1 provided on the substrate 1, and a first metal layer M1 provided on the first
  • the passivation layer 4 on the second metal layer M2, the anode 31 provided on the passivation layer 4, the pixel definition layer 5 provided on the anode 31 and the passivation layer 4, are provided on the The light emitting layer 33 on the anode 31 and the cathode 33 provided on the light emitting layer 33 and the pixel definition layer 5.
  • the first metal layer M1 includes a gate 11 of the switching thin film transistor T1, a gate 21 of the driving thin film transistor T2 spaced apart from the gate 11 of the switching thin film transistor T1, and a gate electrode 21 of the driving thin film transistor T2
  • the first electrode plate 61 of the storage capacitor C1 electrically connected to the gate 21;
  • the active layer 3 includes an active layer 14 of the switching thin film transistor T1 on the gate insulating layer 2 above the gate 11 of the switching thin film transistor T1 and a gate 21 of the driving thin film transistor T2 On the gate insulating layer 2 drives the active layer 24 of the thin film transistor T2.
  • the second metal layer M2 includes a source 12 and a drain 13 of the switching thin film transistor T1 in contact with both ends of the active layer 14 of the switching thin film transistor T1, and an active layer 24 in contact with the driving thin film transistor T2, respectively
  • the source electrode 22 and the drain electrode 23 of the driving thin film transistor T2 in contact with both ends of the device and the second electrode plate 62 of the storage capacitor C1 electrically connected to the source electrode 22 of the driving thin film transistor T2.
  • the anode 31, the cathode 33 and the light emitting layer 33 together form the organic light emitting diode D1.
  • the present invention respectively forms the first electrode plate 61 and the second electrode plate 62 of the storage capacitor C1 through two photomask processes.
  • the two photomask processes are respectively for the first metal layer M1 Performing a patterned photomask process and a photomask process for patterning the second metal layer M2, the first electrode plate 61 and the first electrode plate 61 of each storage capacitor C1 are adjusted by changing the opening size of the photomask used in the photomask process
  • the area directly facing the two electrode plates 62 is specifically adjusted to adjust the opening size of the region where the first mask 61 and the second electrode plate 62 are formed corresponding to the photomask process to adjust the first electrode plate 61 and the second of the storage capacitor C1
  • the facing area of the electrode plate 62 makes the facing area of the first electrode plate 61 and the second electrode plate 62 of the storage capacitor C1 in the sub-pixel 10 with a small voltage drop the storage capacitance in the sub-pixel 10 with a small voltage drop
  • the materials of the first metal layer M1 and the second metal layer M2 are all one or a combination of molybdenum, aluminum and copper.
  • the present invention provides an OLED display panel, which includes multiple sub-pixels, multiple scan lines, multiple data lines, scan signal output units, and data signal output units; the multiple sub-pixel arrays are arranged corresponding to each A row of sub-pixels is provided with a scan line electrically connected to the row of sub-pixels, and a data line electrically connected to the column of sub-pixels is provided corresponding to each column of sub-pixels, and the scan signal output unit is electrically connected to the plurality of scan lines , The data signal output unit is electrically connected to the plurality of data lines; each sub-pixel includes a storage capacitor; in the same row of sub-pixels, the storage capacitor of the sub-pixel farther away from the scan signal output unit The larger the capacitance value; in the same column of sub-pixels, the larger the storage capacitor capacitance value of the sub-pixel farther from the data signal output unit, the change in the storage capacitor capacitance value is used to balance the voltage change caused by the voltage drop, Improve the uniformity of the display screen.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
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Abstract

本发明提供一种OLED显示面板。该OLED显示面板包括多个子像素、多条扫描线、多条数据线、扫描信号输出单元及数据信号输出单元；多个子像素阵列排布，对应每一行子像素设有一与该行子像素电性连接的扫描线，对应每一列子像素设有一与该列子像素电性连接的数据线，扫描信号输出单元电性连接多条扫描线，数据信号输出单元电性连接多条数据线；每一个子像素均包括一存储电容；在同一行子像素中，距离扫描信号输出单元越远的子像素的存储电容的电容值越大；在同一列子像素中，距离数据信号输出单元越远的子像素的存储电容的电容值越大，利用存储电容的电容值的变化，平衡因电压降导致的电压变化，提升显示画面的均一性。

Description

OLED显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板。
 背景技术
随着显示技术的发展，平板显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
有机发光二极管显示器件（Organic Light Emitting Display，OLED）由于同时具备自发光，不需背光源、对比度高、厚度薄、视角广、反应速度快、可用于挠曲性面板、使用温度范围广、构造及制程较简单等优异特性，被认为是下一代平面显示器的新兴应用技术。
OLED显示器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED显示器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
随着时代及技术的进步，大尺寸、高分辨率的AMOLED显示装置逐渐发展起来，相应的，大尺寸AMOLED显示装置也需要较大尺寸的显示面板及较多数量的像素，显示面板内的信号线长度将越来越长，信号线电阻也越大。不可避免的，施加在信号线上的信号会产生电压降（IR Drop），造成实际施加到各个子像素中的信号偏离原信号，最终达到子像素亮度不足，显示面板的显示均一性下降。
 技术问题
本发明的目的在于提供一种OLED显示面板，能够提升显示面板的显示均一性。
 技术解决方案
为实现上述目的，本发明提供了一种OLED显示面板，包括多个子像素、多条扫描线、多条数据线、扫描信号输出单元及数据信号输出单元；
所述多个子像素阵列排布，对应每一行子像素设有一与该行子像素电性连接的扫描线，对应每一列子像素设有一与该列子像素电性连接的数据线，所述扫描信号输出单元电性连接所述多条扫描线，所述数据信号输出单元电性连接所述多条数据线；
每一个子像素均包括一存储电容；在同一行子像素中，距离所述扫描信号输出单元越远的子像素的存储电容的电容值越大；在同一列子像素中，距离所述数据信号输出单元越远的子像素的存储电容的电容值越大。
每一个存储电容均包括平行间隔设置的第一电极板和第二电极板；
所有子像素的存储电容的第一电极板和第二电极板之间的间距均相等；
在同一行子像素中，距离所述扫描信号输出单元越远的子像素的存储电容的第一电极板和第二电极板正对面积越大；
在同一列子像素中，距离所述数据信号输出单元越远的子像素的存储电容的第一电极板和第二电极板正对面积越大。
每一个子像素均还包括开关薄膜晶体管、驱动薄膜晶体管及有机发光二极管；
所述开关薄膜晶体管的栅极电性连接该子像素对应的扫描线，源极电性连接该子像素对应的数据线，漏极电性连接驱动薄膜晶体管的栅极及存储电容的第一电极板；
所述驱动薄膜晶体管的源极电性连接存储电容的第二电极板和电源电压，漏极电性连接有机发光二极管的阳极；
所述有机发光二极管的阴极接地。
所述开关薄膜晶体管的栅极、驱动薄膜晶体管的栅极、扫描线及存储电容的第一电极板均位于第一金属层；
所述开关薄膜晶体管的源极和漏极、驱动薄膜晶体管的源极和漏极、数据线及存储电容的第二电极板均位于绝缘层叠于所述第一金属层上的第二金属层。
所述扫描信号输出单元的数量为两个，每一条扫描线的两端分别电性连接所述两个扫描信号输出单元；
在同一行子像素中，各个子像素的存储电容的电容值从该行子像素的中心向两边逐渐减小。
其特征在于，所述扫描信号输出单元的数量为一个，每一条扫描线的一端电性连接所述扫描信号输出单元；
在同一行子像素中，各个子像素的存储电容的电容值从与所述该行子像素靠近所述扫描信号输出单元的一端向远离所述扫描信号输出单元的一端的逐渐增大。
所述数据信号输出单元的数量为一个，每一条数据线的一端电性连接所述数据信号输出单元；
在同一列子像素中，各个子像素的存储电容的电容值从与所述该列子像素靠近所述数据信号输出单元的一端向远离所述数据信号输出单元的一端的逐渐增大。
通过两道光罩制程分别形成所述存储电容的第一电极板和第二电极板。
通过调整所述光罩制程所用的光罩的开口大小来调整各个存储电容的第一电极板和第二电极板的正对面积。
所述第一金属层和第二金属层的材料均为钼、铝及铜中的一种或多种的组合。
 有益效果
本发明的有益效果：本发明提供一种OLED显示面板，包括多个子像素、多条扫描线、多条数据线、扫描信号输出单元及数据信号输出单元；所述多个子像素阵列排布，对应每一行子像素设有一与该行子像素电性连接的扫描线，对应每一列子像素设有一与该列子像素电性连接的数据线，所述扫描信号输出单元电性连接所述多条扫描线，所述数据信号输出单元电性连接所述多条数据线；每一个子像素均包括一存储电容；在同一行子像素中，距离所述扫描信号输出单元越远的子像素的存储电容的电容值越大；在同一列子像素中，距离所述数据信号输出单元越远的子像素的存储电容的电容值越大，利用存储电容的电容值的变化，平衡因电压降导致的电压变化，提升显示画面的均一性。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的OLED显示面板的第一实施例的示意图；
图2为本发明的OLED显示面板的第二实施例的示意图；
图3为本发明的OLED显示面板中的子像素的电路图；
图4为本发明的OLED显示面板的子像素的结构图；
图5为本发明的OLED显示面板的驱动薄膜晶体管的。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图4，本发明提供一种OLED显示面板，包括多个子像素10、多条扫描线20、多条数据线30、扫描信号输出单元40及数据信号输出单元50。
具体地，如图1或图2所示，所述多个子像素10阵列排布，所述多条扫描线20与所述多条数据线30绝缘交叉围成多个封闭图形，所述多个子像素10分别设于所述多个封闭图形内，对应每一行子像素10设有一与该行子像素10电性连接的扫描线20，对应每一列子像素20设有一与该列子像素10电性连接的数据线30，所述扫描信号输出单元40电性连接所述多条扫描线20，所述数据信号输出单元50电性连接所述多条数据线30；
进一步地，每一个子像素10均包括一存储电容C1；在同一行子像素10中，距离所述扫描信号输出单元40越远的子像素10的存储电容C1的电容值越大；在同一列子像素10中，距离所述数据信号输出单元50越远的子像素10的存储电容C1的电容值越大。
需要说明的是，在OLED显示面板的每一个子像素10均需要一个驱动薄膜晶体管T2（Drive TFT）来驱动有机发光二极管D1发光，而所述存储电容C1的作用为存储用于控制驱动薄膜晶体管T2打开的数据电压，使得驱动薄膜晶体管T2能够顺利打开，向有机发光二极管D1中输入电流，驱动有机发光二极管D1发光。
进一步地， N型薄膜晶体管的栅极电压与漏极电流之间的关系如图5所示，从图5中可知，栅极电压越高，漏极电流越大。
从而，本发明通过设置通过调整各个子像素10中的存储电容C1的电容值，使得不同子像素10的存储电容C1充电后具有不同的电压，进而改变驱动薄膜晶体管T2的栅极电压，再影响驱动薄膜晶体管T2的漏极的电流，通过设置电压降小的子像素中的存储电容小，电压降大的子像素中的存储电容大，利用存储电容的电容值的变化，平衡因电压降导致的电压变化，最终使得流入有机发光二极管D1的电流大小一致，保证显示画面的均一性。
具体地，如图1所示，在本发明的第一实施例中，所述扫描信号输出单元40的数量为一个，每一条扫描线20的一端电性连接所述扫描信号输出单元40；
在同一行子像素10中，各个子像素10的存储电容C1的电容值从与所述该行子像素10靠近所述扫描信号输出单元40的一端向远离所述扫描信号输出单元40的一端的逐渐增大；
所述数据信号输出单元50的数量为一个，每一条数据线30的一端电性连接所述数据信号输出单元50；
在同一列子像素10中，各个子像素10的存储电容C1的电容值从与所述该列子像素10靠近所述数据信号输出单元50的一端向远离所述数据信号输出单元50的一端的逐渐增大。
具体地，如图2所示，在本发明的第二实施例中，所述扫描信号输出单元40的数量为两个，每一条扫描线20的两端分别电性连接所述两个扫描信号输出单元40；
在同一行子像素10中，各个子像素10的存储电容C1的电容值从该行子像素10的中心向两边逐渐减小；
所述数据信号输出单元50的数量为一个，每一条数据线30的一端电性连接所述数据信号输出单元50；
在同一列子像素10中，各个子像素10的存储电容C1的电容值从与所述该列子像素10靠近所述数据信号输出单元50的一端向远离所述数据信号输出单元50的一端的逐渐增大。
具体地，本发明通过调整各个存储电容C1的电极板的正对面积来改变各个存储电容C1的电容值，其中，每一个存储电容C1均包括平行间隔设置的第一电极板61和第二电极板62；
所有子像素10的存储电容C1的第一电极板61和第二电极板62之间的间距均相等；
在同一行子像素10中，距离所述扫描信号输出单元40越远的子像素10的存储电容C1的第一电极板61和第二电极板62正对面积越大；
在同一列子像素10中，距离所述数据信号输出单元50越远的子像素10的存储电容C1的第一电极板61和第二电极板62正对面积越大。
具体地，如图3及图4所示，在本发明的优选实施例中，所述OLED显示面板的每一个子像素10均包括：开关薄膜晶体管T1、驱动薄膜晶体管T2、有机发光二极管D1及存储电容C1。
其中，所述开关薄膜晶体管T1的栅极11电性连接该子像素10对应的扫描线20，源极12电性连接该子像素10对应的数据线30，漏极13电性连接驱动薄膜晶体管T2的栅极21及存储电容C1的第一电极板61；
所述驱动薄膜晶体管T2的源极22电性连接存储电容C1的第二电极板62和电源电压Vdd，漏极23电性连接有机发光二极管D1的阳极31；
所述有机发光二极管D1的阴极33接地。
进一步地，在本发明的一些实施例中，所述OLED显示面板板具体结构如图4所示，包括基板1、设于所述基板1上的第一金属层M1、设于所述第一金属层M1上的栅极绝缘层2、设于所述栅极绝缘层2上的有源层3、设于所述有源层3及栅极绝缘层2上的第二金属层M2、设于所述第二金属层M2上的钝化层4、设于所述钝化层4上的阳极31、设于所述阳极31及钝化层4上的像素定义层5、设于所述阳极31上的发光层33、设于所述发光层33及像素定义层5上的阴极33。
其中，所述第一金属层M1包括开关薄膜晶体管T1的栅极11、与所述开关薄膜晶体管T1的栅极11间隔设置的驱动薄膜晶体管T2的栅极21以及与所述驱动薄膜晶体管T2的栅极21电性连接的存储电容C1的第一电极板61；
所述有源层3包括位于所述开关薄膜晶体管T1的栅极11的上的栅极绝缘层2上的开关薄膜晶体管T1的有源层14及位于所述驱动薄膜晶体管T2的栅极21上的栅极绝缘层2上的驱动薄膜晶体管T2的有源层24。
所述第二金属层M2包括分别与开关薄膜晶体管T1的有源层14的两端接触的开关薄膜晶体管T1的源极12和漏极13、分别与所述驱动薄膜晶体管T2的有源层24的两端接触的驱动薄膜晶体管T2的源极22和漏极23及与所述驱动薄膜晶体管T2的源极22电性连接的存储电容C1的第二电极板62。
所述阳极31、阴极33及发光层33共同形成所述有机发光二极管D1。
具体地，本发明通过两道光罩制程分别形成所述存储电容C1的第一电极板61和第二电极板62，对应到上述实施例中，该两道光罩制程分别为对第一金属层M1进行图案化的光罩制程及对第二金属层M2进行图案化的光罩制程，通过改变所述光罩制程所用的光罩的开口大小来调整各个存储电容C1的第一电极板61和第二电极板62的正对面积，具体为调整所述光罩制程对应形成第一电极板61和第二电极板62的区域的开口大小，来调整存储电容C1的第一电极板61和第二电极板62的正对面积，使得电压降小的子像素10中的存储电容C1的第一电极板61和第二电极板62的正对面积小，电压降大的子像素10中的存储电容C1的第一电极板61和第二电极板62的正对面积大，达到使得电压降小的子像素10中的存储电容C1的第一电极板61和第二电极板62的电容值小，电压降大的子像素10中的存储电容C1的第一电极板61和第二电极板62的电容值大的目的。
优选地，所述第一金属层M1和第二金属层M2的材料均为钼、铝及铜中的一种或多种的组合。
综上所述，本发明提供一种OLED显示面板，包括多个子像素、多条扫描线、多条数据线、扫描信号输出单元及数据信号输出单元；所述多个子像素阵列排布，对应每一行子像素设有一与该行子像素电性连接的扫描线，对应每一列子像素设有一与该列子像素电性连接的数据线，所述扫描信号输出单元电性连接所述多条扫描线，所述数据信号输出单元电性连接所述多条数据线；每一个子像素均包括一存储电容；在同一行子像素中，距离所述扫描信号输出单元越远的子像素的存储电容的电容值越大；在同一列子像素中，距离所述数据信号输出单元越远的子像素的存储电容的电容值越大，利用存储电容的电容值的变化，平衡因电压降导致的电压变化，提升显示画面的均一性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 、一种OLED显示面板，包括多个子像素、多条扫描线、多条数据线、扫描信号输出单元及数据信号输出单元；
    所述多个子像素阵列排布，对应每一行子像素设有一与该行子像素电性连接的扫描线，对应每一列子像素设有一与该列子像素电性连接的数据线，所述扫描信号输出单元电性连接所述多条扫描线，所述数据信号输出单元电性连接所述多条数据线；
    每一个子像素均包括一存储电容；在同一行子像素中，距离所述扫描信号输出单元越远的子像素的存储电容的电容值越大；在同一列子像素中，距离所述数据信号输出单元越远的子像素的存储电容的电容值越大。
  2. 如权利要求1所述的OLED显示面板，其中，每一个存储电容均包括平行间隔设置的第一电极板和第二电极板；
    所有子像素的存储电容的第一电极板和第二电极板之间的间距均相等；
    在同一行子像素中，距离所述扫描信号输出单元越远的子像素的存储电容的第一电极板和第二电极板正对面积越大；
    在同一列子像素中，距离所述数据信号输出单元越远的子像素的存储电容的第一电极板和第二电极板正对面积越大。
  3. 如权利要求2所述的OLED显示面板，其中，每一个子像素均还包括开关薄膜晶体管、驱动薄膜晶体管及有机发光二极管；
    所述开关薄膜晶体管的栅极电性连接该子像素对应的扫描线，源极电性连接该子像素对应的数据线，漏极电性连接驱动薄膜晶体管的栅极及存储电容的第一电极板；
    所述驱动薄膜晶体管的源极电性连接存储电容的第二电极板和电源电压，漏极电性连接有机发光二极管的阳极；
    所述有机发光二极管的阴极接地。
  4. 如权利要求3所述的OLED显示面板，其中，所述开关薄膜晶体管的栅极、驱动薄膜晶体管的栅极、扫描线及存储电容的第一电极板均位于第一金属层；
    所述开关薄膜晶体管的源极和漏极、驱动薄膜晶体管的源极和漏极、数据线及存储电容的第二电极板均位于绝缘层叠于所述第一金属层上的第二金属层。
  5. 如权利要求1所述的OLED显示面板，其中，所述扫描信号输出单元的数量为两个，每一条扫描线的两端分别电性连接所述两个扫描信号输出单元；
    在同一行子像素中，各个子像素的存储电容的电容值从该行子像素的中心向两边逐渐减小。
  6. 如权利要求1所述的OLED显示面板，其中，所述扫描信号输出单元的数量为一个，每一条扫描线的一端电性连接所述扫描信号输出单元；
    在同一行子像素中，各个子像素的存储电容的电容值从与所述该行子像素靠近所述扫描信号输出单元的一端向远离所述扫描信号输出单元的一端的逐渐增大。
  7. 如权利要求1所述的OLED显示面板，其中，所述数据信号输出单元的数量为一个，每一条数据线的一端电性连接所述数据信号输出单元；
    在同一列子像素中，各个子像素的存储电容的电容值从与所述该列子像素靠近所述数据信号输出单元的一端向远离所述数据信号输出单元的一端的逐渐增大。
  8. 如权利要求2所述的OLED显示面板，其中，通过两道光罩制程分别形成所述存储电容的第一电极板和第二电极板。
  9. 如权利要求8所述的OLED显示面板，其中，通过调整所述光罩制程所用的光罩的开口大小来调整各个存储电容的第一电极板和第二电极板的正对面积。
  10. 如权利要求4所述的OLED显示面板，其中，所述第一金属层和第二金属层的材料均为钼、铝及铜中的一种或多种的组合。
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