WO2020220643A1 - 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 - Google Patents

一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 Download PDF

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WO2020220643A1
WO2020220643A1 PCT/CN2019/118291 CN2019118291W WO2020220643A1 WO 2020220643 A1 WO2020220643 A1 WO 2020220643A1 CN 2019118291 W CN2019118291 W CN 2019118291W WO 2020220643 A1 WO2020220643 A1 WO 2020220643A1
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capillary
ceramic substrate
microgrooves
demetallized
chip
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French (fr)
Inventor
李宗涛
汤勇
王弘
余树东
伍科健
梁观伟
丁鑫锐
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Guangdongluckystar Electronic Technology Co Ltd
Shenzhen Good Machine Automatic Equipment Co Ltd
South China University of Technology SCUT
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Guangdongluckystar Electronic Technology Co Ltd
Shenzhen Good Machine Automatic Equipment Co Ltd
South China University of Technology SCUT
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Priority to US17/607,901 priority Critical patent/US12009270B2/en
Publication of WO2020220643A1 publication Critical patent/WO2020220643A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/657—Shapes or dispositions of interconnections on sidewalls or bottom surfaces of the package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers

Definitions

  • the invention belongs to the technical field of microelectronic packaging, and particularly relates to a demetallized ceramic substrate with a capillary microgroove structure and a welding method thereof.
  • the ceramic substrate is a sheet-like material that is based on electronic ceramics and forms a support base for membrane circuit components and external bonding components. With excellent thermal conductivity and air tightness, it is widely used in power electronics, led packaging and other fields.
  • the ceramic substrate which is the substrate of the LED chip, is a medium for deriving heat energy between the LED chip and the system circuit board, and is combined with the LED chip by eutectic or flip chip, and at the same time plays a role of supporting and protecting the chip.
  • the heat dissipation ceramic substrates on the market are mainly based on the following four categories: low temperature co-fired multilayer ceramics (LTCC), high temperature co-fired multilayer ceramics (HTCC), and direct bonding copper substrates (DBC), Direct Copper Plated Substrate (DPC).
  • the existing ceramic substrate cannot avoid the metallization process in the production process, especially when using flip-chip, the upper surface of the ceramic substrate (the surface where the chip is placed) needs to be coated with copper, and the lower surface needs to be plated with electrodes. Metalized vias. This leads to the complicated production process and high cost of such ceramic substrates.
  • the purpose of the present invention is to provide a demetallized ceramic substrate with a capillary micro groove structure and a welding method.
  • the present invention provides a demetallized ceramic substrate with surface capillary microstructure and a welding method, which has the advantages of simple structure and process, and can provide reliable electrical connection between the chip and the printed circuit board.
  • the invention provides a demetallized ceramic substrate with a surface capillary microgroove structure, which includes a ceramic substrate body and a surface capillary microstructure; the surface capillary microstructure is a capillary microgroove.
  • the surface capillary microstructure is two left-right symmetrical capillary microgrooves, the two capillary microgrooves are respectively provided on both sides of the ceramic substrate body, and the two capillary microgrooves are not connected; the capillary microgrooves are ceramic substrates
  • the main body is formed by etching inward from the upper surface and the side surface.
  • the shape of the capillary microgrooves includes rectangular microgrooves, zigzag microgrooves and circular microgrooves, but is not limited to the above.
  • the method of preparing the capillary microgrooves includes laser processing, photolithography and chemical etching.
  • the average width of the capillary microgrooves is 10 ⁇ m-100 ⁇ m, and the average groove depth is 10 ⁇ m-100 ⁇ m, so as to form a line that is small enough to meet the requirements of the capillary driving solder force.
  • the material of the main body of the ceramic substrate includes Al 2 O 3 , BeO and AlN. Further, the ceramic substrate (1) is made by high temperature sintering of one of Al 2 O 3 , BeO and AlN.
  • the main body of the ceramic substrate is made by a method of sintering ceramic sheets, and the sintering temperature is 850-1900°C; the method of forming the ceramic substrate includes powder pressing, casting, and rolling.
  • the invention provides a welding method of a demetallized ceramic substrate with a surface capillary microgroove structure, which includes the following steps:
  • the fixing method in step (1) includes fixing with insulating glue.
  • the fixing method in step (2) includes fixing with insulating glue or mechanical clamping.
  • the molten solder includes gold-tin eutectic solder, the melting point of the gold-tin eutectic solder is 217-230°C, and the gold content is 10wt%-15wt%;
  • the soldering method includes reflow soldering.
  • the power of the reflow soldering equipment is 11-15kw, the length of the heating zone is 1000-2000mm, and the heating temperature is 220-240°C.
  • the present invention has the following advantages and beneficial effects:
  • the demetallized ceramic substrate with surface capillary microgrooves structure provided by the present invention has simple structure and manufacturing process of the ceramic substrate, and eliminates the need for copper-clad photolithography, vapor deposition electrode and other processes, thereby greatly reducing the previous metallized ceramic substrate The difficulty of production is suitable for mass production.
  • the soldering method for demetallized ceramic substrates with surface capillary microgrooves utilizes reflow soldering method to make Au-Sn eutectic solder rise driven by capillary force, which reduces the difficulty of soldering on metalized ceramic substrates in the past , which greatly simplifies the process flow and reduces the production cost to the greatest extent while ensuring reliable connection.
  • Figure 1 is a schematic diagram of a demetallized ceramic substrate with a rectangular capillary microstructure (a demetallized ceramic substrate with a surface capillary microgroove structure);
  • FIG. 2 is a schematic diagram of a demetallized ceramic substrate with a rectangular capillary micro-groove structure on which LED chips are placed;
  • FIG. 3 is a schematic diagram of welding a demetallized ceramic substrate with a rectangular capillary microgroove structure and a printed circuit board;
  • FIG. 4 is a cross-sectional view of welding a demetallized ceramic substrate with a rectangular capillary microgroove structure and a printed circuit board;
  • a demetallized ceramic substrate with a surface capillary micro groove structure comprising a ceramic substrate main body 1 and a surface capillary microstructure 2; the surface capillary microstructures 2 are arranged on both sides of the ceramic substrate main body 1, and the surface capillary microstructures
  • the structure of the demetallized ceramic substrate with the surface capillary microgrooves structure can refer to FIG. 1.
  • the surface capillary microstructure is two symmetrical capillary microgrooves, the two capillary microgrooves are respectively provided on both sides of the ceramic substrate body, and the two capillary microgrooves are not connected; the capillary microgrooves are the ceramic substrate body from above The surface and sides are etched inward.
  • the capillary microgrooves include rectangular microgrooves, zigzag microgrooves and circular microgrooves.
  • the material of the ceramic substrate body is AlN, which is formed by sintering the AlN material at 1500 degrees Celsius. Then, on the upper surface and both sides of the sintered ceramic substrate body, according to the shape and position of the chip electrode, coat two non-contact photoresist with a distance of 25 ⁇ m and a photoresist thickness of 2 ⁇ m, using ultraviolet light Exposing and developing to obtain rectangular capillary microgrooves with a width of 10 ⁇ m and a length of 10 ⁇ m to obtain the demetallized ceramic substrate with a surface capillary microgroove structure.
  • a welding method of a demetallized ceramic substrate with a surface capillary micro-groove structure includes the following steps:
  • Example 1 A layer of solder is applied on the lower printed circuit board pad, and the method of reflow soldering is used to make the molten solder droplets flow to the electrode of the led chip under the capillary force and connect with the electrode of the led chip to form Demetallized ceramic substrate with protection and heat dissipation function and reliable electrical connection, please refer to Figure 4.
  • the welding strength meets the normal use requirements of LED lamps. Under the premise of ensuring reliable electrical performance, the production time of the entire production process is less than 1 minute, which greatly reduces the production time and saves the production cost.

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  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)

Abstract

本发明公开了一种具有表面毛细微槽结构的去金属化陶瓷基板及其焊接方法。所述陶瓷基板的两侧面和上表面刻有两条不相连通的毛细微槽，用于驱动焊料上升，实现芯片与印制电路板的电气连接。本发明提供的一种具有表面毛细微槽结构的去金属化陶瓷基板，其结构设计简单合理，相比于传统的低温共烧陶瓷基板以及目前应用比较广泛的直接镀铜陶瓷基板，免去光刻覆铜以及金属化过孔的工艺，减少了整体制造工艺的复杂性，并降低了成本。

Description

一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 技术领域
本发明属于微电子封装技术领域，特别涉及一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法。
背景技术
陶瓷基板是以电子陶瓷为基底，对膜电路元件及外贴切元件形成一个支撑底座的片状材料。具有优良的导热性和气密性，广泛应用于功率电子、led封装等领域。
作为led芯片基板的陶瓷基板，是属于led芯片与系统电路板两者之间热能导出的媒介，并借由共晶或覆晶与led芯片结合，同时起到支撑保护芯片的作用。为确保LED的散热稳定和LED的发光效率，市面上的散热陶瓷基板主要以以下四类为主：低温共烧多层陶瓷(LTCC)、高温共烧多层陶瓷(HTCC)、直接接合铜基板(DBC)、直接镀铜基板(DPC)。但现有的陶瓷基板在生产过程中都避免不了金属化这一过程，尤其是采用倒装芯片时，陶瓷基板上表面(放置芯片的面)需要覆铜，下表面需要镀电极，同时还需要金属化的过孔。这就导致了这种陶瓷基板的生产工艺复杂并且成本很高。
发明概述
技术问题
问题的解决方案
技术解决方案
为了克服现有技术存在的不足，本发明的目的是提供一种具有毛细微槽结构的去金属化陶瓷基板以及焊接方法。
针对上述问题，本发明提供了一种具有表面毛细微结构的去金属化陶瓷基板与 焊接方法，它具有结构、工艺简单，并能为芯片与印制电路板提供可靠电气连接等优点。
本发明的目的至少通过如下技术方案之一实现。
本发明提供的一种具有表面毛细微槽结构的去金属化陶瓷基板，包括陶瓷基板主体及表面毛细微结构；所述表面毛细微结构为毛细微槽。
进一步地，所述表面毛细微结构为两个左右对称的毛细微槽，两个毛细微槽分别设于陶瓷基板主体的两侧，两个毛细微槽不连通；所述毛细微槽为陶瓷基板主体从上表面与侧面向内刻蚀所形成的。
进一步地，所述毛细微槽的形状包括矩形微槽、锯齿形微槽及圆形微槽，但不局限于以上几种。
进一步地，制备所述毛细微槽的方式包括激光加工、光刻及化学刻蚀。
进一步地，所述毛细微槽的平均宽度为10μm-100μm，平均槽深为10μm-100μm，从而形成足够小的线度来满足毛细驱动焊料的力的要求。
进一步地，所述陶瓷基板主体的材料包括Al 2O 3、BeO及AlN。进一步的，该陶瓷基板(1)采用Al 2O 3、BeO、AlN其中一种高温烧结而成。
优选地，陶瓷基板主体采用陶瓷片烧结的方法制成，烧结温度为850-1900℃；陶瓷基板成型的方法包括粉末压制、流延、轧制。
本发明提供的一种具有表面毛细微槽结构的去金属化陶瓷基板的焊接方法，包括如下步骤：
(1)将芯片(3)固定(固晶)在所述具有表面毛细微槽结构的去金属化陶瓷基板的上表面；
(2)将带芯片的陶瓷基板固定在具有合适位置焊盘的印制电路板(4)上；
(3)在焊盘(5)上放置熔融焊料(6)，利用毛细力驱动焊料从下层焊盘上升至芯片电极，实现芯片与印制电路板的电气连接。
进一步地，步骤(1)所述固定的方式包括采用绝缘胶固定。
进一步地，步骤(2)所述固定的方式包括采用绝缘胶固定或机械夹持。
进一步地，步骤(3)所述熔融焊料包括金锡共晶焊料，所述金锡共晶焊料的熔点为217-230℃，金含量为10wt％-15wt％；焊接方式包括回流焊，所述回流焊 设备功率为11-15kw、加热区长度为1000-2000mm，加热温度为220-240℃。
发明的有益效果
有益效果
与现有技术相比，本发明具有如下优点和有益效果：
(1)本发明提供的具有表面毛细微槽结构的去金属化陶瓷基板，陶瓷基板结构及制造工艺简单，省去了覆铜光刻、蒸镀电极等工艺从而大大降低了以往金属化陶瓷基板的生产难度，适用于大批量生产。
(2)本发明提供的具有表面毛细微槽结构的去金属化陶瓷基板焊接方法，利用回流焊的方法使得金锡共晶焊料在毛细力驱动下上升，降低了以往金属化陶瓷基板的焊接难度，大大简化了工艺流程，在保证可靠连接的同时最大程度地降低了生产成本。
对附图的简要说明
附图说明
图1为矩形毛细微结构的去金属化陶瓷基板(具有表面毛细微槽结构的去金属化陶瓷基板)示意图；
图2为放有led芯片的具有矩形毛细微槽结构的去金属化陶瓷基板示意图；
图3为具有矩形毛细微槽结构的去金属化陶瓷基板与印刷电路板焊接的示意图；
图4为具有矩形毛细微槽结构的去金属化陶瓷基板与印刷电路板焊接的剖面图；
其中，1为陶瓷基板主体；2为表面毛细微结构；3为芯片；4为印制电路板；5为焊盘；6为熔融焊料。
发明实施例
本发明的实施方式
以下结合附图和实例对本发明的具体实施作进一步说明，但本发明的实施和保护不限于此。需指出的是，以下若有未特别详细说明之过程，均是本领域技术人员可参照现有技术实现或理解的。所用试剂或仪器未注明生产厂商者，视为 可以通过市售购买得到的常规产品。
实施例1
一种具有表面毛细微槽结构的去金属化陶瓷基板，包括陶瓷基板主体1及表面毛细微结构2；所述表面毛细微结构2设置在陶瓷基板主体1的两侧，所述表面毛细微结构为毛细微槽，所述具有表面毛细微槽结构的去金属化陶瓷基板的结构可参照图1。
所述表面毛细微结构为两个左右对称的毛细微槽，两个毛细微槽分别设于陶瓷基板主体的两侧，两个毛细微槽不连通；所述毛细微槽为陶瓷基板主体从上表面与侧面向内刻蚀所形成的。所述毛细微槽包括矩形微槽、锯齿形微槽及圆形微槽。
所述陶瓷基板主体的材质为AlN，将AlN材料在1500摄氏度下烧结而成。然后在烧结好的陶瓷基板主体的上表面及两侧面按照芯片电极的形状与位置，涂覆两条不相接触的光刻胶，间隔距离为25μm，光刻胶厚度为2μm，利用紫外光进行曝光显影，获得宽度为10μm，长度为10μm的矩形毛细微槽，得到所述具有表面毛细微槽结构的去金属化陶瓷基板。
一种具有表面毛细微槽结构的去金属化陶瓷基板的焊接方法，包括如下步骤：
(1)将芯片3固定在所述具有表面毛细微槽结构的去金属化陶瓷基板的上表面(采用DX-20型号的绝缘胶固定)，如图2所示；
(2)将带芯片的陶瓷基板固定在具有焊盘的印制电路板4上(采用DX-20型号的绝缘胶固定)，如图3所示；
(3)在焊盘5上放置熔融焊料6，利用毛细力驱动焊料从下层焊盘至芯片电极，采用11kw的回流焊设备，在印制电路板上放置熔点为217℃金锡共晶焊料，并于3s的时间内加热升温至230℃，使焊料熔化，并在毛细力驱动下流向芯片电极，实现芯片与印制电路板的电气连接，从而完成焊接过程。
实施例1在下层印制电路板焊盘上涂好的一层焊料，采用回流焊的方法，使熔融的焊料液滴在毛细力驱动下流向led芯片电极并与led芯片电极连接，就形成了具有保护散热功能，以及可以提供可靠电气连接的去金属化陶瓷基板，可参照图4。经测试焊接强度满足LED灯具的正常使用要求，在保证可靠的电气性能的 前提下，整个生产流程的生产时间小于1min，大大减少了生产时间，节约了生产成本。
以上实施例仅为本发明较优的实施方式，仅用于解释本发明，而非限制本发明，本领域技术人员在未脱离本发明精神实质下所作的改变、替换、修饰等均应属于本发明的保护范围。

Claims (10)

  1. 一种具有表面毛细微槽结构的去金属化陶瓷基板，其特征在于，包括陶瓷基板主体及表面毛细微结构；所述表面毛细微结构设置在陶瓷基板主体的两侧，所述表面毛细微结构具体为毛细微槽。
  2. 根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板，其特征在于，所述表面毛细微结构为两个呈镜像对称的毛细微槽，两个毛细微槽分别设于陶瓷基板主体的两侧，两个毛细微槽不连通；所述毛细微槽为陶瓷基板主体从上表面与侧面向内刻蚀形成的。
  3. 根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板，其特征在于，所述毛细微槽包括矩形微槽、锯齿形微槽及圆形微槽。
  4. 根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板，其特征在于，制备所述毛细微槽的方式包括激光加工、光刻及化学刻蚀。
  5. 根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板，其特征在于，所述毛细微槽的平均宽度为10μm-100μm，平均槽深为10μm-100μm。
  6. 根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板，其特征在于，所述陶瓷基板主体的材料包括Al 2O 3、BeO及AlN。
  7. 一种权利要求1所述具有表面毛细微槽结构的去金属化陶瓷基板的焊接方法，其特征在于，包括如下步骤：
    (1)将芯片(3)固定在所述具有表面毛细微槽结构的去金属化陶瓷基板的上表面；
    (2)将带芯片的陶瓷基板固定在具有焊盘的印制电路板(4)上；
    (3)在焊盘(5)上放置熔融焊料(6)，利用毛细力驱动焊料从 下层焊盘上升至芯片电极，实现芯片与印制电路板的电气连接。
  8. 根据权利要求7所述的焊接方法，其特征在于，步骤(1)所述固定的方式包括采用绝缘胶固定。
  9. 根据权利要求7所述的焊接方法，其特征在于，步骤(2)所述固定的方式包括采用绝缘胶固定或机械夹持。
  10. 根据权利要求7所述的焊接方法，其特征在于，步骤(3)所述熔融焊料包括金锡共晶焊料，所述金锡共晶焊料的熔点为217-230℃，金含量为10wt％-15wt％；焊接方式包括回流焊，所述回流焊设备功率为11-15kw、加热区长度为1000-2000mm，加热温度为220-240℃。
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