CN108447827B - 一种电力转换电路的封装模块 - Google Patents
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Abstract
本发明提供了一种电力转换电路的封装模块,本发明利用支撑构件与支撑螺栓的相互配合达到防止DBC陶瓷基板和散热基板的翘曲;在所述DBC陶瓷基板的周缘部不设置导电图案,使得周缘部较薄,可以进一步抑制应力;支撑构件及其支撑螺栓搭建起散热路径,进步增强散热效果;在使用第一焊料焊接所述DBC陶瓷基板和散热基板时,环形凹槽可以防止第一焊料在散热基板的上表面的横向扩散,防止焊料堵塞第一贯通孔,以及防止壳体与所述散热基板的接合。
Description
技术领域
本发明涉及电力转换领域,具体涉及一种处理大电流的电力转换电路的封装模块。
背景技术
现有的电力转换芯片的封装多采用DBC基板上设置转换芯片的方式,然后再将该DBC基板焊接于散热基板上,这样不仅会导致DBC基板的翘曲,也会导致散热基板的翘曲。例如图1所示的电力转换封装,其包括带有导电图案的绝缘基板100,该绝缘基板100包括绝缘层1100、上表面的第一导电图案1000和第二表面上的第二导电图案1200,两个半导体元件110通过焊线140彼此电连接且连接至第一导电图案1000上,并通过两个电极420引出端子,漏出外连面a,最后用树脂130进行整体的塑封。该封装的芯片和电极通过粘结剂150粘结于第一导电图案100上,在转换芯片(例如IGBT、MOSFET或其他功率元件)工作时,大量的热会首先导致绝缘基板100的翘曲,使得半导体元件110与粘结剂150剥离,不利于可靠性封装的目的。
发明内容
基于解决上述问题,本发明提供了一种电力转换电路的封装模块,其包括:
散热基板,其具有一上表面,在所述上表面上设置有一个环形凹槽,所述环形凹槽未贯通所述散热基板;
DBC陶瓷基板,其通过第一焊料焊接于所述上表面上且包括陶瓷衬底和镀敷在所述陶瓷衬底上下的第一导电图案和第二导电图案,所述DBC陶瓷基板包括安装部以及围绕所述安装部的周缘部,在所述周缘部上设置有多个第一贯通孔,在所述安装部的中央位置设置有一个第二贯通孔;
第一半导体元件和第二半导体元件,安装于所述DBC陶瓷基板的安装部上,且所述第二贯通孔设于所述第一半导体元件和第二半导体元件之间,所述第一半导体元件和第二半导体元件通过电极片彼此电连接以及电连接至所述第一导电图案;
支撑构件,其包括支撑板以及在支撑板四周用于支撑所述支撑板的多个支撑脚,所述支撑板通过导热绝缘胶分别搭载于所述第一半导体元件和第二半导体元件上,所述多个支撑脚穿过所述多个第一贯通孔使其多个头部插入所述环形凹槽内,并通过第二焊料焊接于所述环形凹槽内;其中,所述支撑构件一体成型;
支撑螺栓,所述支撑螺栓穿过所述第二贯通孔和所述支撑板上的与所述支撑螺栓相匹配的螺孔,并且所述支撑螺栓的底端抵靠在所述散热基板的上表面上。
根据本发明的实施例,还包括壳体,所述壳体位于所述散热基板上,且所述DBC陶瓷基板的周缘部的部分嵌入所述壳体。
根据本发明的实施例,所述壳体内填充有塑封树脂,所述塑封树脂的顶面与所述壳体的顶面齐平或低于所述壳体的顶面。
根据本发明的实施例,还包括PCB基板,所述PCB基板搭载于所述壳体上。
根据本发明的实施例,还包括柱状引线端子,所述柱状引线端子的一端电连接至所述第一导电图案,其另一端插入所述PCB基板的通孔内。
根据本发明的实施例,所述周缘部不包括第一导电图案和第二导电图案。
根据本发明的实施例,所述环形凹槽内侧具有第一焊料,而外侧没有第一焊料。
根据本发明的实施例,所述环形凹槽内包括部分的第一焊料。
根据本发明的实施例,所述支撑构件为散热材质。
根据本发明的实施例,所述第一半导体元件为IGBT或MOSFET芯片,所述第二半导体芯片为二极管。
根据本发明的实施例,所述第二贯通孔为与所述支撑螺栓相匹配的螺孔。
本发明的优点如下:
(1)利用支撑构件与支撑螺栓的相互配合达到防止DBC陶瓷基板和散热基板的翘曲,这主要是由于支撑板一方面按压着所述DBC陶瓷基板,另一方面还提供支撑螺栓在中间部分进行额外的支撑;
(2)在所述DBC陶瓷基板的周缘部不设置导电图案,使得周缘部较薄,可以进一步抑制应力;
(3)支撑构件及其支撑螺栓搭建起散热路径,进步增强散热效果;
(4)在使用第一焊料焊接所述DBC陶瓷基板和散热基板时,环形凹槽可以防止第一焊料在散热基板的上表面的横向扩散,防止焊料堵塞第一贯通孔,以及防止壳体与所述散热基板的接合。
附图说明
图1为现有技术的电力转换电路的封装模块的剖面图;
图2为本发明的电力转换电路的封装模块的剖面图。
具体实施方式
参见图2,本发明的电力转换电路的封装模块,其包括:
散热基板1,其具有一上表面19,在所述上表面19上设置有一个环形凹槽12,所述环形凹槽12未贯通所述散热基板1;
DBC陶瓷基板2,其通过第一焊料焊14接于所述上表面19上且包括陶瓷衬底22和镀敷在所述陶瓷衬底22上下的第一导电图案21和第二导电图案23,所述DBC陶瓷基板2包括安装部以及围绕所述安装部的周缘部,在所述周缘部上设置有多个第一贯通孔24,在所述安装部的中央位置设置有一个第二贯通孔25;
第一半导体元件和第二半导体元件4,安装于所述DBC陶瓷基板2的安装部上,且所述第二贯通孔25设于所述第一半导体元件和第二半导体元件之间,所述第一半导体元件和第二半导体元件通过电极片7彼此电连接以及电连接至所述第一导电图案21;
支撑构件,其包括支撑板8以及在支撑板8四周用于支撑所述支撑板8的多个支撑脚81,所述支撑板8通过导热绝缘胶9分别搭载于所述第一半导体元件和第二半导体元件上,所述多个支撑脚81穿过所述多个第一贯通孔24使其多个头部82插入所述环形凹槽12内,并通过第二焊料13焊接于所述环形凹槽12内;其中,所述支撑构件一体成型;
支撑螺栓10,所述支撑螺栓10穿过所述第二贯通孔25和所述支撑板8上的与所述支撑螺栓10相匹配的螺孔,并且所述支撑螺栓10的底端抵靠在所述散热基板1的上表面19上;
壳体3,所述壳体3位于所述散热基板1上,且所述DBC陶瓷基板2的周缘部的部分嵌入所述壳体3;
塑封树脂6,填充于所述壳体3内,所述塑封树脂6的顶面与所述壳体3的顶面齐平或低于所述壳体6的顶面;
PCB基板5,所述PCB基板5搭载于所述壳体3上;以及
柱状引线端子11,所述柱状引线端子11的一端电连接至所述第一导电图案21,其另一端插入所述PCB基板5的通孔内。
其中,所述周缘部不包括第一导电图案和第二导电图案,防止周缘部的应力与中间区域的应力差距较大,减小翘曲的风险。所述环形凹槽12内侧具有第一焊料14,而外侧没有第一焊料14,所述环形凹槽12内包括部分的第一焊料14。
根据本发明的实施例,优选的,所述支撑构件为散热材质,这样可以有效将半导体元件4上部的热量通过支撑板和支撑脚进行传导出去。所述第二贯通孔25为与所述支撑螺栓10相匹配的螺孔。
其中,所述第一半导体元件为IGBT或MOSFET芯片,所述第二半导体芯片为二极管。
最后应说明的是:显然,上述实施例仅仅是为清楚地说明本发明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。
Claims (10)
1.一种电力转换电路的封装模块,其包括:
散热基板,其具有一上表面,在所述上表面上设置有一个环形凹槽,所述环形凹槽未贯通所述散热基板;DBC陶瓷基板,其通过第一焊料焊接于所述上表面上且包括陶瓷衬底和镀敷在所述陶瓷衬底上下的第一导电图案和第二导电图案,所述DBC陶瓷基板包括安装部以及围绕所述安装部的周缘部,在所述周缘部上设置有多个第一贯通孔,在所述安装部的中央位置设置有一个第二贯通孔;
第一半导体元件和第二半导体元件,安装于所述DBC陶瓷基板的安装部上,且所述第二贯通孔设于所述第一半导体元件和第二半导体元件之间,所述第一半导体元件和第二半导体元件通过电极片彼此电连接以及电连接至所述第一导电图案;
支撑构件,其包括支撑板以及在支撑板四周用于支撑所述支撑板的多个支撑脚,所述支撑板通过导热绝缘胶分别搭载于所述第一半导体元件和第二半导体元件上,所述多个支撑脚穿过所述多个第一贯通孔使其多个头部插入所述环形凹槽内,并通过第二焊料焊接于所述环形凹槽内;其中,所述支撑构件一体成型;
支撑螺栓,所述支撑螺栓穿过所述第二贯通孔和所述支撑板上的与所述支撑螺栓相匹配的螺孔,并且所述支撑螺栓的底端抵靠在所述散热基板的上表面上。
2.根据权利要求1所述的电力转换电路的封装模块,其特征在于:还包括壳体,所述壳体位于所述散热基板上,且所述DBC陶瓷基板的周缘部的部分嵌入所述壳体。
3.根据权利要求2所述的电力转换电路的封装模块,其特征在于:所述壳体内填充有塑封树脂,所述塑封树脂的顶面与所述壳体的顶面齐平或低于所述壳体的顶面。
4.根据权利要求3所述的电力转换电路的封装模块,其特征在于:还包括PCB基板,所述PCB基板搭载于所述壳体上。
5.根据权利要求4所述的电力转换电路的封装模块,其特征在于:还包括柱状引线端子,所述柱状引线端子的一端电连接至所述第一导电图案,其另一端插入所述PCB基板的通孔内。
6.根据权利要求1所述的电力转换电路的封装模块,其特征在于:所述周缘部不包括第一导电图案和第二导电图案。
7.根据权利要求1所述的电力转换电路的封装模块,其特征在于:所述环形凹槽内侧具有第一焊料,而外侧没有第一焊料,所述环形凹槽内包括部分的第一焊料。
8.根据权利要求1所述的电力转换电路的封装模块,其特征在于:所述支撑构件为散热材质。
9.根据权利要求1所述的电力转换电路的封装模块,其特征在于:所述第一半导体元件为IGBT或MOSFET芯片,所述第二半导体元件为二极管。
10.根据权利要求1所述的电力转换电路的封装模块,其特征在于:所述第二贯通孔为与所述支撑螺栓相匹配的螺孔。
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