WO2020216353A1 - 一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法 - Google Patents

一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法 Download PDF

Info

Publication number
WO2020216353A1
WO2020216353A1 PCT/CN2020/086848 CN2020086848W WO2020216353A1 WO 2020216353 A1 WO2020216353 A1 WO 2020216353A1 CN 2020086848 W CN2020086848 W CN 2020086848W WO 2020216353 A1 WO2020216353 A1 WO 2020216353A1
Authority
WO
WIPO (PCT)
Prior art keywords
electric field
anode
cathode
dust removal
present
Prior art date
Application number
PCT/CN2020/086848
Other languages
English (en)
French (fr)
Inventor
唐万福
赵晓云
王大祥
段志军
邹永安
奚勇
Original Assignee
上海必修福企业管理有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202010323654.3A external-priority patent/CN113522526A/zh
Priority claimed from CN202010322636.3A external-priority patent/CN113522525A/zh
Application filed by 上海必修福企业管理有限公司 filed Critical 上海必修福企业管理有限公司
Priority to CN202080030933.9A priority Critical patent/CN113727782A/zh
Publication of WO2020216353A1 publication Critical patent/WO2020216353A1/zh

Links

Images

Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L9/00—Disinfection, sterilisation or deodorisation of air
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/01—Pretreatment of the gases prior to electrostatic precipitation
    • B03C3/011—Prefiltering; Flow controlling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/02—Plant or installations having external electricity supply
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/02—Plant or installations having external electricity supply
    • B03C3/04—Plant or installations having external electricity supply dry type
    • B03C3/06—Plant or installations having external electricity supply dry type characterised by presence of stationary tube electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B03C3/40—Electrode constructions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B03C3/40—Electrode constructions
    • B03C3/41—Ionising-electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B03C3/40—Electrode constructions
    • B03C3/45—Collecting-electrodes
    • B03C3/47—Collecting-electrodes flat, e.g. plates, discs, gratings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B03C3/40—Electrode constructions
    • B03C3/45—Collecting-electrodes
    • B03C3/49—Collecting-electrodes tubular
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F1/00—Room units for air-conditioning, e.g. separate or self-contained units or units receiving primary air from a central station
    • F24F1/02—Self-contained room units for air-conditioning, i.e. with all apparatus for treatment installed in a common casing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F7/00—Ventilation
    • F24F7/04—Ventilation with ducting systems, e.g. by double walls; with natural circulation
    • F24F7/06—Ventilation with ducting systems, e.g. by double walls; with natural circulation with forced air circulation, e.g. by fan positioning of a ventilator in or against a conduit

Definitions

  • the invention belongs to the field of air purification, and particularly relates to a multi-stage electric field dust removal method for a clean room system used for semiconductor manufacturing and a semiconductor manufacturing method.
  • the clean room is a commonly used manufacturing workshop environment in the semiconductor manufacturing process.
  • the purpose is to avoid particles, humidity, temperature and other pollution of semiconductor materials, which in turn affects the yield and reliability of semiconductors.
  • each clean room has a different air cleanliness level, which is usually divided by the maximum concentration limit of a certain particle size in the clean room.
  • different air cleanliness levels have different requirements for the cleanliness of the airflow entering the clean room.
  • the existing semiconductor manufacturing plant is a three-story building.
  • the clean room is arranged on the middle level of the plant, that is, the second floor.
  • the third level of the plant is equipped with a purification system, including the installation between the third floor and the second floor.
  • the air enters from the third floor, and the air entering the third floor is purified by the purification system.
  • the purified gas is input to the clean room on the second floor, and the gas generated in the clean room is discharged into the first floor of the factory building.
  • the layer always maintains negative pressure to ensure that the clean room on the second layer always keeps air out to the first layer, and dust cannot suck in.
  • the existing semiconductor manufacturing plant occupies a large space and the construction cost is high; the filter cotton is spread about 1 meter later between the second and third floors of the plant, which needs to be replaced regularly, which leads to increased use costs.
  • an electric field device is also used to remove dust and purify the particles contained in the dust-containing gas.
  • the basic principle is to use high-voltage discharge to generate plasma to charge the particles, and then adsorb the charged particles to the dust collecting electrode to achieve electric field dust removal.
  • the existing electric field device can overcome the shortcomings of large space occupation, high construction cost, and high power consumption in the existing semiconductor manufacturing plant, the current semiconductor manufacturing requires more and more dust removal, and the existing electric field device cannot meet the corresponding requirements .
  • the existing semiconductor manufacturing size is generally below 100 nm, and 50 nm dust particles are only allowed to be 2 particles/m 3 , and the existing electric field devices cannot effectively remove particles of this level.
  • the following four methods are generally used at present.
  • One is to decay the ozone itself with the air flow; the other is to increase the temperature of the air flowing through the environment to quickly reduce ozone to oxygen; and the third is to use redox reactions to reduce Ozone reacts with reducing substances to achieve ozone digestion; the fourth is to use adsorbents or adsorption devices to efficiently remove ozone, such as activated carbon.
  • the above methods need to increase the length of the air flow channel or add additional heating equipment and ozone removal equipment to achieve a relatively ideal ozone removal effect. It has disadvantages such as large volume, high cost, and difficult control.
  • the purpose of the present invention is to provide a clean room system and semiconductor manufacturing system for semiconductor manufacturing, and a multi-stage electric field dust removal method and semiconductor for the clean room system of semiconductor manufacturing
  • the manufacturing method also provides a method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room system, which solves the contradiction between electrostatic dust removal efficiency and excessive ozone concentration, and the existing air purification technology in the semiconductor manufacturing field consumes high power and large volume ,
  • the cost is high, and at least one technical problem cannot be removed from the nano-scale particles in the air.
  • the removal efficiency of particles with a diameter of 23nm can reach 99.99% or more under the working condition of a gas flow rate of 6m/s, and the removal efficiency is high. Therefore, the present invention can effectively remove particles at a high flow rate.
  • the required electric field device is small in size, low in cost, and can reduce operating electricity costs; at the same time, some embodiments of the present invention have a removal efficiency of more than 99.99% for 23nm particles in the gas, and the ozone output is controlled within a certain range to meet the requirements of semiconductor Manufacturing environment requirements.
  • Example 1 provided by the present invention: a clean room system for semiconductor manufacturing, including a clean room and a multi-level electric field dust removal system;
  • the clean room includes a gas inlet; the multi-level electric field dust removal system includes a dust removal system inlet, a dust removal system outlet, and at least two electric field devices connected in series; the gas inlet of the clean room and the dust removal system of the multi-level electric field dust removal system The outlet is connected.
  • Example 2 provided by the present invention: including the above example 1, wherein each of the electric field devices includes an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionizing electric field.
  • Example 3 provided by the present invention: including the above example 1 or 2, wherein the multi-stage electric field dust removal system further includes a power supply device, and the electric field anode and the electric field cathode of each electric field device are connected to the two power supply devices. The electrodes are electrically connected.
  • Example 4 provided by the present invention: including the above example 3, wherein the power supply device provides the same voltage for each electric field device in the multi-stage electric field dust removal system.
  • Example 5 provided by the present invention: including the above example 3, wherein the power supply device provides a different voltage for each of the electric field devices in the multi-stage electric field dust removal system.
  • Example 7 includes any one of the above examples 1 to 6, wherein each of the electric field devices further includes an electric field device inlet and an electric field device outlet; the electric field anode includes a first anode part and a second Two anode parts, the first anode part is close to the inlet of the electric field device, the second anode part is close to the outlet of the electric field device, and at least one cathode support plate is arranged between the first anode part and the second anode part .
  • Example 8 provided by the present invention: including the above example 7, wherein the electric field device further includes an insulation mechanism for achieving insulation between the cathode support plate and the electric field anode.
  • Example 9 provided by the present invention: including the above example 8, wherein an electric field flow channel is formed between the electric field anode and the electric field cathode, and the insulating mechanism is arranged outside the electric field flow channel.
  • Example 10 provided by the present invention: including the above examples 8 or 9, wherein the insulating mechanism includes an insulating part and a heat insulating part; the material of the insulating part is a ceramic material or a glass material.
  • Example 11 provided by the present invention: including the above example 10, wherein the insulating portion is an umbrella-shaped string ceramic column, an umbrella-shaped string glass column, a columnar string ceramic column or a columnar glass column, with glaze on the inside and outside of the umbrella or the inside and outside of the column.
  • the insulating portion is an umbrella-shaped string ceramic column, an umbrella-shaped string glass column, a columnar string ceramic column or a columnar glass column, with glaze on the inside and outside of the umbrella or the inside and outside of the column.
  • Example 12 provided by the present invention: including the above example 11, wherein the distance between the outer edge of the umbrella string ceramic column or the umbrella string glass column and the electric field anode is more than 1.4 times the electric field distance, and the umbrella string
  • the sum of the pitches of the umbrella protrusions of ceramic columns or umbrella-shaped glass columns is more than 1.4 times the insulation distance of the umbrella-shaped ceramic columns or umbrella-shaped glass columns.
  • the total length of the umbrella edge of the umbrella-shaped ceramic columns or umbrella-shaped glass columns The insulation distance of the umbrella-shaped string ceramic column or umbrella-shaped string glass column is more than 1.4 times.
  • Example 13 provided by the present invention: including any one of the above examples 7 to 12, wherein the length of the first anode portion is 1/10 to 1/4, 1/4 to the length of the electric field anode 1/3, 1/3 to 1/2, 1/2 to 2/3, 2/3 to 3/4, or 3/4 to 9/10.
  • Example 14 provided by the present invention includes any one of the above examples 7 to 13, wherein the length of the first anode part is long enough to remove part of dust and reduce accumulation in the insulation mechanism and The dust on the cathode support plate reduces the electric breakdown caused by the dust.
  • Example 15 provided by the present invention includes any one of the above examples 7 to 14, wherein the second anode part includes a dust accumulation section and a reserved dust accumulation section.
  • Example 16 provided by the present invention: includes any one of the foregoing examples 2 to 15, wherein the electric field cathode includes at least one electrode rod.
  • Example 17 provided by the present invention: including the above example 16, wherein the diameter of the electrode rod is not greater than 3 mm.
  • Example 18 provided by the present invention: including the above examples 16 or 17, wherein the shape of the electrode rod is needle-like, polygonal, burr-like, threaded rod-like or cylindrical.
  • Example 19 provided by the present invention includes any one of the foregoing Examples 2 to 18, wherein the electric field anode is composed of a hollow tube bundle.
  • Example 20 provided by the present invention: includes the above example 19, wherein the hollow cross section of the electric field anode tube bundle is circular or polygonal.
  • Example 21 provided by the present invention: includes the above example 20, wherein the polygon is a hexagon.
  • Example 22 provided by the present invention: includes any one of the above examples 18 to 21, wherein the tube bundle of the electric field anode is in a honeycomb shape.
  • Example 23 provided by the present invention: includes any one of the above examples 2 to 22, wherein the electric field cathode penetrates the electric field anode.
  • Example 24 includes any one of the foregoing Examples 2 to 23, wherein the electric field device further includes an auxiliary electric field unit for generating an auxiliary electric field that is not parallel to the ionization electric field.
  • Example 25 includes any one of the foregoing Examples 2 to 23, wherein the electric field device further includes an auxiliary electric field unit, the ionization electric field includes a flow channel, and the auxiliary electric field unit is used to generate and The auxiliary electric field where the flow channel is not vertical.
  • Example 26 provided by the present invention: includes the above examples 24 or 25, wherein the auxiliary electric field unit includes a first electrode, and the first electrode of the auxiliary electric field unit is arranged at or near the entrance of the ionization electric field.
  • Example 27 provided by the present invention: including the above example 26, wherein the first electrode is a cathode.
  • Example 28 provided by the present invention: including the above example 26 or 27, wherein the first electrode of the auxiliary electric field unit is an extension of the electric field cathode.
  • Example 30 provided by the present invention: includes any one of the foregoing Examples 24 to 29, wherein the auxiliary electric field unit includes a second electrode, and the second electrode of the auxiliary electric field unit is arranged at or near the ionizing electric field The exit.
  • Example 31 provided by the present invention: including the above example 30, wherein the second electrode is an anode.
  • Example 32 provided by the present invention: includes the above example 30 or 31, wherein the second electrode of the auxiliary electric field unit is an extension of the electric field anode.
  • Example 34 provided by the present invention: includes any one of the foregoing Examples 24 to 27, 30 and 31, wherein the electrode of the auxiliary electric field and the electrode of the ionization electric field are arranged independently.
  • Example 35 provided by the present invention: includes any one of the foregoing Examples 2 to 34, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.
  • Example 36 provided by the present invention: includes any one of the foregoing Examples 2 to 34, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 6.67:1 to 56.67:1.
  • Example 37 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 Mm; the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.
  • Example 38 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the distance between the electric field anode and the electric field cathode is less than 150 mm.
  • Example 39 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm.
  • Example 40 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the distance between the electric field anode and the electric field cathode is 5-100 mm.
  • Example 41 provided by the present invention: includes any one of the foregoing Examples 2 to 40, wherein the length of the electric field anode is 10-180 mm.
  • Example 42 provided by the present invention: includes any one of the foregoing Examples 2 to 40, wherein the length of the electric field anode is 60-180 mm.
  • Example 43 provided by the present invention: includes any one of the foregoing Examples 2 to 42, wherein the length of the electric field cathode is 30-180 mm.
  • Example 44 provided by the present invention: includes any one of the foregoing Examples 2 to 42, wherein the length of the electric field cathode is 54-176 mm.
  • Example 45 provided by the present invention: includes any one of the foregoing Examples 24 to 44, wherein, when operating, the number of coupling times of the ionization electric field ⁇ 3.
  • Example 46 provided by the present invention: includes any one of the above examples 2 to 44, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode, the electric field anode and the electric field The distance between the cathodes, the length of the anode of the electric field, and the length of the cathode of the electric field make the coupling times of the ionization electric field ⁇ 3.
  • Example 47 provided by the present invention: includes any one of the foregoing Examples 2 to 46, wherein the value range of the ionization electric field voltage is 1kv-50kv.
  • Example 48 provided by the present invention: includes any one of the foregoing Examples 2 to 47, wherein the electric field device further includes a plurality of connecting housings, and the series electric field stages are connected through the connecting housings.
  • Example 49 provided by the present invention: includes the above-mentioned example 48, wherein the distance between adjacent electric field levels is more than 1.4 times the pole pitch.
  • Example 50 provided by the present invention: includes any one of the foregoing Examples 2 to 49, wherein the electric field device further includes a front electrode, and the front electrode is connected to the electric field anode and the entrance of the electric field device. Between the ionizing electric field formed by the electric field cathode.
  • Example 51 provided by the present invention: includes the above example 50, wherein the front electrode is in the shape of a surface, a mesh, a hole plate, or a plate.
  • Example 52 provided by the present invention: includes the above example 50 or 51, wherein at least one through hole is provided on the front electrode.
  • Example 53 provided by the present invention: includes the above example 52, wherein the through hole is polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus.
  • Example 54 provided by the present invention: includes the above example 52 or 53, wherein the aperture of the through hole is 0.1-3 mm.
  • Example 55 includes any one of the foregoing Examples 50 to 54, wherein the front electrode is a combination of one or more of solid, liquid, gaseous molecular clusters, or plasma .
  • Example 56 includes any one of the foregoing Examples 50 to 55, wherein the front electrode is a conductive mixed state material, a biological body naturally mixes a conductive material, or an object is artificially processed to form a conductive material.
  • Example 57 provided by the present invention: includes any one of the foregoing Examples 50 to 56, wherein the front electrode is 304 steel or graphite.
  • Example 58 provided by the present invention: includes any one of the foregoing Examples 50 to 56, wherein the front electrode is an ion-containing conductive liquid.
  • Example 59 provided by the present invention: includes any one of the foregoing Examples 50 to 58, wherein, during operation, before air with particles enters the ionizing electric field formed by the electric field cathode and the electric field anode, When air passes through the front electrode, the front electrode charges particles in the air.
  • Example 60 provided by the present invention: includes the above-mentioned example 59, wherein when air with particles enters the ionization electric field, the electric field anode exerts an attractive force on the charged particles, causing the charged particles to move toward the electric field anode , Until the charged particles adhere to the electric field anode.
  • Example 61 provided by the present invention: including the above examples 59 or 60, wherein the front electrode introduces electrons into the particulate matter in the gas, and the electrons are transferred between the front electrode and the electric field anode To charge more particles in the gas.
  • Example 62 provided by the present invention: includes any one of the foregoing Examples 59 to 61, wherein the particles in the gas conduct electrons and form a current between the front electrode and the electric field anode.
  • Example 63 provided by the present invention: includes any one of the foregoing Examples 59 to 62, wherein the front electrode charges the particulate matter in the gas by contacting the particulate matter in the gas.
  • Example 64 provided by the present invention: includes any one of the foregoing Examples 59 to 63, wherein at least one through hole is provided on the front electrode.
  • Example 65 includes the above-mentioned example 64, wherein the particulate matter in the air is charged when air with particulate matter passes through the through hole on the front electrode.
  • Example 66 provided by the present invention: includes any one of the foregoing Examples 50 to 65, wherein the front electrode is perpendicular to the electric field anode.
  • Example 67 provided by the present invention: includes any one of the foregoing Examples 50 to 66, wherein the front electrode is parallel to the electric field anode.
  • Example 68 provided by the present invention: includes any one of the foregoing Examples 50 to 67, wherein the front electrode adopts a metal wire mesh.
  • Example 69 provided by the present invention: includes any one of the foregoing Examples 50 to 68, wherein the voltage between the front electrode and the electric field anode is different from that between the electric field cathode and the electric field anode The voltage.
  • Example 70 provided by the present invention: includes any one of the foregoing Examples 50 to 69, wherein the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage.
  • Example 71 provided by the present invention: includes any one of the foregoing Examples 50 to 70, wherein the voltage between the front electrode and the electric field anode is 0.1-2 kv/mm.
  • Example 72 provided by the present invention: includes any one of the foregoing Examples 50 to 71, wherein the electric field device includes a flow channel, the front electrode is located in the flow channel; the cross-sectional area of the front electrode The cross-sectional area ratio of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.
  • Example 73 provided by the present invention: A semiconductor manufacturing system, including the clean room system for semiconductor manufacturing according to any one of Examples 1-72 above, and further including:
  • the film preparation device is arranged in the clean room.
  • the thin film etching device is arranged in the clean room.
  • the ion doping device is arranged in the clean room.
  • Example 74 provided by the present invention: A multi-stage electric field dust removal method for a clean room system in semiconductor manufacturing, including the following steps:
  • Example 75 provided by the present invention: includes the above-mentioned example 74, wherein the voltage applied to each of the power supply devices is the same.
  • Example 76 provided by the present invention: includes the above example 74, wherein the voltage applied to each of the power supply devices is not exactly the same.
  • Example 77 provided by the present invention: including the above examples 74 or 76, the voltage applied to each of the power supply devices is completely different.
  • Example 78 provided by the present invention: includes any one of the foregoing Examples 74-77, wherein each electric field device that causes air to pass through the multi-stage electric field dust removal system in series includes: air passes through each electric field device to perform an electric field Dust removal, the electric field dust removal method includes the following steps:
  • Example 79 provided by the present invention: includes Example 78, wherein the electric field dust removal method further includes a method of providing an auxiliary electric field, including the following steps:
  • An auxiliary electric field is generated in the flow channel, and the auxiliary electric field is not perpendicular to the flow channel.
  • Example 80 provided by the present invention: includes Example 79, wherein the auxiliary electric field includes a first electrode, and the first electrode is disposed at or near the entrance of the ionization electric field.
  • Example 81 provided by the present invention: including Example 80, wherein the first electrode is a cathode.
  • Example 82 provided by the present invention: includes any one of Examples 80 or 81, wherein the first electrode is an extension of the electric field cathode.
  • Example 84 provided by the present invention: includes any one of Examples 79 to 83, wherein the auxiliary electric field includes a second electrode, and the second electrode is disposed at or near the outlet of the ionization electric field.
  • Example 85 provided by the present invention: including Example 84, wherein the second electrode is an anode.
  • Example 86 provided by the present invention: includes Example 84 or 85, wherein the second electrode is an extension of the electric field anode.
  • Example 88 provided by the present invention: includes any one of Examples 79 to 81, wherein the first electrode is arranged independently of the electric field anode and the electric field cathode.
  • Example 89 provided by the present invention: including Example 84 or 85, wherein the second electrode is arranged independently of the electric field anode and the electric field cathode.
  • Example 90 provided by the present invention: includes any one of Examples 78 to 89, wherein the electric field dust removal method further includes a method for reducing the coupling of dust removal electric field, including the following steps:
  • Example 91 provided by the present invention: including Example 90, which includes selecting the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode.
  • Example 92 provided by the present invention includes Example 91, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 1.667:1 to 1680:1.
  • Example 93 provided by the present invention includes Example 91, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 6.67:1 to 56.67:1.
  • Example 94 provided by the present invention: including any one of Examples 90 to 93, including selecting the electric field cathode to have a diameter of 1-3 mm, and the distance between the electric field anode and the electric field cathode to be 2.5-139.9 mm
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.
  • Example 95 provided by the present invention: includes any one of Examples 90 to 94, wherein the distance between the electric field anode and the electric field cathode is selected to be less than 150 mm.
  • Example 96 provided by the present invention: includes any one of Examples 90 to 94, wherein the distance between the electric field anode and the electric field cathode is selected to be 2.5-139.9 mm.
  • Example 97 provided by the present invention: includes any one of Examples 90 to 94, wherein the distance between the electric field anode and the electric field cathode is selected to be 5-100 mm.
  • Example 98 provided by the present invention: includes any one of Examples 90 to 97, which includes selecting the electric field anode length to be 10-180 mm.
  • Example 99 provided by the present invention: includes any one of Examples 90 to 97, including selecting the electric field anode length to be 60-180 mm.
  • Example 100 provided by the present invention: includes any one of Examples 90 to 99, including selecting the electric field cathode length to be 30-180 mm.
  • Example 101 provided by the present invention: includes any one of Examples 90 to 99, including selecting the electric field cathode length to be 54-176 mm.
  • Example 102 provided by the present invention: includes any one of Examples 90 to 101, wherein it includes selecting that the electric field cathode includes at least one electrode rod.
  • Example 103 provided by the present invention: includes Example 102, which includes selecting the electrode rod to have a diameter not greater than 3 mm.
  • Example 104 provided by the present invention: includes example 102 or 103, which includes selecting the shape of the electrode rod to be needle-shaped, polygonal, burr-shaped, threaded rod-shaped, or columnar.
  • Example 105 provided by the present invention: includes any one of Examples 90 to 104, wherein it includes selecting that the electric field anode is composed of a hollow tube bundle.
  • Example 106 provided by the present invention: includes Example 105, wherein the hollow section including the selection of the anode tube bundle is circular or polygonal.
  • Example 107 provided by the present invention: includes example 106, which includes selecting the polygon as a hexagon.
  • Example 108 provided by the present invention: includes any one of Examples 105 to 107, wherein the tube bundle including the selection of the electric field anode is in a honeycomb shape.
  • Example 109 provided by the present invention: includes any one of Examples 90 to 108, including selecting the electric field cathode to penetrate into the electric field anode.
  • Example 110 provided by the present invention: includes any one of Examples 90 to 109, wherein the size of the electric field anode or/and the electric field cathode is selected so that the number of electric field couplings is ⁇ 3.
  • Example 111 provided by the present invention: A method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room, including the following steps:
  • the example 112 provided by the present invention includes the above example 111, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the same voltage of each electric field device power supply in the multi-level electric field dust removal system.
  • the example 113 provided by the present invention includes the above example 111, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system is not exactly the same.
  • Example 114 provided by the present invention: includes the above example 111 or 113, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system completely different the same.
  • Example 115 provided by the present invention: a semiconductor manufacturing method including the following steps:
  • a channel is formed on the film, and the channel exposes the surface of the substrate;
  • ion infiltration is performed on the substrate exposed by the trench to form a specific structure with electronic characteristics.
  • the ozone output is less than or equal to a predetermined value, and the predetermined value refers to 30 ppm (parts-per-million), or 10 ppm, or 5 ppm, or 3 ppm, Or 1ppm, or 0.1ppm.
  • the existing semiconductor manufacturing plant is a three-story building.
  • the filter purification system of the clean room requires a separate building.
  • the construction cost is about 300 US dollars/m 2. Therefore, the existing purification system takes up a large space and the construction cost is also high.
  • Some embodiments of the invention can reduce the volume and area by more than 10 times, and save the construction cost, making the present invention small in size and low in cost.
  • the resistance of the ultra-high efficiency filter in the prior art is often more than 1500 Pa, and the resistance of each 1000 kW requires the motor to consume 1000 kW, so the energy consumption of the fan is high.
  • the resistance of some embodiments of the present invention is only about 100 Pa. It can save about 15 times and consume less power.
  • the existing electric field dust removal technology controls the amount of ozone produced at the cost of reducing the dust removal efficiency to ensure that the ozone does not exceed the standard.
  • the present invention ensures the total dust removal efficiency while controlling the amount of ozone produced below a predetermined value.
  • the removal efficiency of 23nm particles can reach 99.99% or more, and the ozone output can be controlled below a predetermined value to meet the requirements of semiconductor manufacturing plants for gas entering the clean room.
  • FIG. 1 is a schematic diagram of the structure of an electric field device in Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram of the structure of the electric field generating unit in the embodiment 2-11 of the present invention.
  • Fig. 3 is an A-A view of the electric field generating unit of Fig. 2 in embodiment 2 and embodiment 5 of the present invention.
  • Fig. 4 is an A-A view of the electric field generating unit of Fig. 2 with length and angle marked in embodiment 2 and embodiment 5 of the present invention.
  • FIG. 5 is a schematic diagram of the structure of two electric field devices in embodiment 2 and embodiment 5 of the present invention.
  • Embodiment 12 is a schematic diagram of the structure of an electric field device in Embodiment 12 of the present invention.
  • FIG. 7 is a schematic structural diagram of an electric field device in Embodiment 14 of the present invention.
  • FIG. 8 is a schematic structural diagram of an electric field device in Embodiment 15 of the present invention.
  • FIG. 9 is a schematic structural diagram of an electric field device in Embodiment 16 of the present invention.
  • Fig. 10 is a schematic structural diagram of a clean room system in embodiment 18 of the present invention.
  • Fig. 11 is a schematic structural diagram of a clean room system in embodiment 19 of the present invention.
  • some embodiments of the present invention can reduce the volume and area by more than 10 times, and save the construction cost, making the present invention small in size and low in cost.
  • the resistance of the ultra-high efficiency filter in the prior art is often more than 1500 Pa, and every 1000 kW of resistance requires the motor to consume 1000 kW of electricity, so the energy consumption of the fan is high.
  • the resistance of some embodiments of the present invention is only about 100 Pa, and the power consumption can be saved. About 15 times, low power consumption.
  • the existing electric field dust removal technology controls the amount of ozone generated at the expense of reducing dust removal efficiency to ensure that the ozone does not exceed the standard.
  • Some embodiments of the present invention ensure the total dust removal efficiency while controlling the amount of ozone generated below a predetermined value.
  • An embodiment of the present invention provides a clean room system for semiconductor manufacturing, including a clean room and a multi-level electric field dust removal system; the clean room includes a gas inlet; the multi-level electric field dust removal system includes a dust removal system inlet and a dust removal system outlet At least two electric field devices connected in series; the gas inlet of the clean room is connected with the dust removal system outlet of the multi-stage electric field dust removal system.
  • each of the electric field devices includes an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionizing electric field.
  • the multi-stage electric field dust removal system includes a power supply device, and the electric field anode and the electric field cathode of each electric field device are electrically connected to two electrodes of the power supply device.
  • the power supply device can provide the same voltage for different electric field devices.
  • the multi-stage electric field dust removal system includes a first-stage electric field device, a second-stage electric field device, and a third-stage electric field device sequentially connected in series
  • the power supply device includes a first power source, the first-stage electric field device, and the second electric field device.
  • the electric field anode and the electric field cathode of the first-level electric field device and the third-level electric field device are respectively electrically connected to the two electrodes of the first power source.
  • the first power source is the first-level electric field device, the second-level electric field device, and the third-level electric field.
  • the device provides the same voltage at the same time.
  • the power supply device can provide different voltages for different electric field devices.
  • the multi-stage electric field dust removal system includes a first-stage electric field device, a second-stage electric field device, and a third-stage electric field device sequentially connected in series, as required by the first-stage electric field device, the second-stage electric field device, and the third-stage electric field device.
  • the voltages are all different.
  • the power supply device may include a first power supply, a second power supply, and a third power supply.
  • the two electrodes of the first power supply are electrically connected to the electric field anode and the electric field cathode of the first-level electric field device.
  • Each electrode is electrically connected to the electric field anode and the electric field cathode of the second-level electric field device, and the two electrodes of the third power source are respectively electrically connected to the electric field anode and the electric field cathode of the third-level electric field device.
  • the third power supply provides different voltages.
  • the power supply device may provide part of the same voltage for each electric field device.
  • the multi-stage electric field dust removal system includes a first-stage electric field device, a second-stage electric field device, and a third-stage electric field device connected in series in sequence.
  • the first-stage electric field device and the second-stage electric field device require the same voltage.
  • the voltage required for the electric field device is different from the voltages of the first-level electric field device and the second-level electric field device.
  • the power supply device may include a first power source and a second power source.
  • the two electrodes of the first power supply are electrically connected.
  • the electric field anode and the electric field cathode of the second electric field device are electrically connected to the two electrodes of the first power supply.
  • the first power supply is the first electric field device and the second electric field device at the same time. Power supply; the electric field anode and the electric field cathode of the third-level electric field device are electrically connected to the two electrodes of the second power supply.
  • the second power supply supplies power for the third-level electric field device, and the first and second power supplies provide different voltages.
  • the voltage value provided by the power supply device to each electric field device is sufficient to ensure the total dust removal efficiency of the multi-stage electric field dust removal system (100%-(100%-P 1 %)*(100%-P 2 %)* «*(100%-P n %)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where P 1 %, P 2 %...P n % are respectively In the multi-level electric field dust removal system, the dust removal efficiency of the first level electric field device, the second level electric field device, ... the nth level electric field device, n is an integer greater than 1.
  • the power supply device provides the same voltage for each of the electric field devices in the multi-stage electric field dust removal system, and the voltage value is sufficient to ensure the total dust removal efficiency of the electric field dust removal system (100%-(100%) -P 1 %)*(100%-P 2 %)* «*(100%-P n %)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where P 1 % , P 2 %...P n % are respectively the dust removal efficiency of the first stage, the second stage, and the nth stage of the electric field device, and n is an integer greater than 1.
  • the power supply device provides different voltages for each electric field device, and the voltage of each electric field device makes the ozone output of the ionization electric field less than a predetermined value.
  • Respectively P 1 %, P 2 % togetherP n %, n is an integer greater than 1, while ensuring the total dust removal efficiency of the electric field dust removal system (100%-(100%-P 1 %)*(100%-P 2 %) )*...*(100%-P n %)) is greater than a predetermined value.
  • the power supply device providing different voltages for each electric field device includes providing different voltages and completely different voltages for each electric field device.
  • the structure of each electric field device in the multi-stage electric field dust removal system may be completely the same, may not be completely the same, or may be completely different.
  • a multi-stage electric field dust removal method for a clean room system used in semiconductor manufacturing which includes the following steps:
  • Each electric field device connected in series to make the gas pass through the multi-stage electric field dust removal system
  • each electric field device that passes air through a multi-stage electric field dust removal system in series includes: air passes through each electric field device to perform electric field dust removal, and the electric field dust removal method includes the following steps:
  • the present invention provides a multi-stage electric field dust removal method for a clean room system used in semiconductor manufacturing, including the following steps: passing air through at least two ionization electric fields connected in series.
  • the voltage applied to each of the power supply devices may be the same. In some embodiments of the present invention, the voltage applied to each of the power supply devices is not completely the same. In some embodiments of the present invention, the voltage applied to each of the power supply devices may be completely different.
  • a method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room includes the following steps:
  • the selecting the voltage of each electric field device in the multi-level electric field dust removal system includes: selecting the same voltage of each electric field device in the multi-level electric field dust removal system.
  • the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system is not completely the same.
  • selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system to be completely different.
  • An embodiment of the present invention relates to a design method of a multi-stage electric field dust removal system.
  • the reason why this method can be realized is that in a certain voltage range, reducing the voltage will reduce the ozone output, but also reduce the dust removal efficiency, but the reduction in ozone output is greater than the reduction in dust removal efficiency.
  • a semiconductor manufacturing system including: the clean room system for semiconductor manufacturing according to the present invention, the clean room system including a clean room and a multi-level electric field dust removal system; and further including:
  • the thin film preparation device is set in a clean room and is used to form a thin film on a substrate. Any applicable related device in the prior art can be selected.
  • the thin film etching device is arranged in a clean room and is used to etch the thin film to form a channel. Any applicable related device in the prior art can be selected.
  • the ion doping device is arranged in a clean room and is used to form a specific structure with electronic characteristics on the substrate exposed by the trench. Any applicable related device in the prior art can be selected.
  • Some embodiments of the present invention also provide a semiconductor manufacturing method, including the following steps:
  • Air dust removal the use of multi-stage electric field dust removal method to remove particles in the gas; the purified gas after multi-stage electric field dust removal enters the clean room;
  • step S3 the groove formation includes the following steps:
  • the exposed film is etched to expose part of the substrate surface to form a channel.
  • the photoresist is a positive resist or a reverse resist.
  • the material of the substrate is silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide, or any other applicable material.
  • the thin film is formed by CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition) process, or other conventional applicable film formation method.
  • CVD Chemical Vapor Deposition
  • PVD Physical Vapor Deposition
  • the main component of the thin film is silicon nitride, silicon oxide, silicon carbide, polysilicon, or any combination of the above, or any other applicable substance.
  • the method of forming the channel may be any suitable method, for example, coating photoresist on the surface of the film, and placing a mask plate with a mask pattern on the photoresist
  • the mask is irradiated with a light source, the photoresist is exposed through the mask, and part of the photoresist is cleaned and removed, exposing part of the film surface.
  • the light source can be any suitable light source, such as ultraviolet, deep ultraviolet or extreme ultraviolet.
  • the photoresist can be positive or negative.
  • the part of the photoresist irradiated by the light source is easily washed off by the developer, and the part not irradiated by the light source is not easily washed off by the developer and remains on the film.
  • the negative resin is selected, the part of the photoresist irradiated by the light source is not easily washed off by the developer and remains on the film, while the part not irradiated by the light source is easily washed off by the developer.
  • the etching method may be any suitable method, for example, dry etching or wet etching is used.
  • dry etching sputter etching and other methods can be used to etch the film, which has good selectivity.
  • wet etching a chemical etching solution such as hydrogen fluoride solution can be used to etch away the part of the film in contact with the chemical etching solution, which has the characteristics of fast etching rate, deep thickness and high sensitivity.
  • the ion infiltration may be diffusion or ion implantation, or any other applicable method.
  • step S4 the electronic characteristic is a PN junction.
  • step S4 ions are allowed to penetrate into the substrate on the substrate exposed after etching to form a specific structure with electronic characteristics such as a PN junction.
  • each electric field device of the multi-stage electric field dust removal system may include an electric field device inlet, an electric field device outlet, an electric field cathode, and an electric field anode.
  • the electric field cathode and the electric field anode are used to generate an ionizing electric field.
  • the oxygen in the gas will be ionized to form a large number of charged oxygen ions.
  • the oxygen ions combine with dust and other particles in the gas to charge the particles.
  • the electric field anode exerts an adsorption force on the negatively charged particles. The particles are adsorbed on the anode of the electric field to remove the particles in the gas.
  • the electric field cathode includes a plurality of cathode wires.
  • the diameter of the cathode wire can be 0.1mm-20mm, and the size parameter can be adjusted according to the application situation and dust accumulation requirements. In an embodiment of the present invention, the diameter of the cathode wire is not greater than 3 mm.
  • the cathode wire uses a metal wire or an alloy wire that is easy to discharge, is temperature-resistant, can support its own weight, and is electrochemically stable.
  • the material of the cathode wire is titanium. The specific shape of the cathode wire is adjusted according to the shape of the electric field anode.
  • the cathode wire For example, if the dust accumulation surface of the electric field anode is flat, the cross section of the cathode wire is circular; if the dust accumulation surface of the electric field anode is an arc surface, the cathode wire needs to be designed as Polyhedral. The length of the cathode wire is adjusted according to the electric field anode.
  • the electric field cathode includes a plurality of cathode rods.
  • the diameter of the cathode rod is not greater than 3 mm.
  • the cathode rod uses a metal rod or alloy rod that is easy to discharge.
  • the shape of the cathode rod can be needle-like, polygonal, burr-like, threaded rod-like or column-like. The shape of the cathode rod can be adjusted according to the shape of the electric field anode.
  • the cross section of the cathode rod needs to be designed to be circular; if the dust accumulation surface of the electric field anode is an arc surface, the cathode The rod needs to be designed in a multi-faceted shape.
  • the electric field cathode is penetrated in the electric field anode.
  • the electric field anode includes one or more hollow anode tubes arranged in parallel. When there are multiple hollow anode tubes, all the hollow anode tubes constitute a honeycomb electric field anode.
  • the cross section of the hollow anode tube may be circular or polygonal. If the cross section of the hollow anode tube is circular, a uniform electric field can be formed between the electric field anode and the electric field cathode, and the inner wall of the hollow anode tube is not easy to accumulate dust. If the hollow anode tube has a triangular cross section, 3 dust accumulation surfaces and 3 remote dust holding angles can be formed on the inner wall of the hollow anode tube.
  • the hollow anode tube with this structure has the highest dust holding rate. If the cross section of the hollow anode tube is quadrilateral, 4 dust accumulation surfaces and 4 dust holding angles can be obtained, but the assembly structure is unstable. If the cross section of the hollow anode tube is hexagonal, 6 dust accumulation surfaces and 6 dust retention angles can be formed, and the dust accumulation surface and dust retention rate are balanced. If the cross section of the hollow anode tube is more polygonal, more dust accumulation edges can be obtained, but the dust holding rate is lost. In an embodiment of the present invention, the diameter of the tube inscribed circle of the hollow anode tube ranges from 5 mm to 400 mm.
  • the electric field cathode is installed on the cathode support plate, and the cathode support plate and the electric field anode are connected by an insulating mechanism.
  • the insulation mechanism is used to achieve insulation between the cathode support plate and the electric field anode.
  • the electric field anode includes a first anode part and a second anode part, that is, the first anode part is close to the inlet of the electric field device, and the second anode part is close to the outlet of the electric field device.
  • the cathode support plate and the insulation mechanism are between the first anode part and the second anode part, that is, the insulation mechanism is installed in the middle of the ionization electric field or the middle of the electric field cathode, which can support the electric field cathode and play a good role in the electric field cathode. Relative to the fixing effect of the electric field anode, the electric field cathode and the electric field anode maintain a set distance. In the prior art, the support point of the cathode is at the end of the cathode, and it is difficult to maintain the distance between the cathode and the anode.
  • the insulation mechanism is arranged outside the electric field flow channel, that is, outside the electric field flow channel, to prevent or reduce dust in the gas from gathering on the insulation mechanism, causing the insulation mechanism to break down or conduct electricity.
  • the insulation mechanism adopts a high-voltage resistant ceramic insulator to insulate the electric field cathode and the electric field anode.
  • the electric field anode is also called a kind of housing.
  • the first anode part is located before the cathode support plate and the insulating mechanism in the gas flow direction.
  • the first anode part can remove water in the gas and prevent water from entering the insulating mechanism, causing the insulating mechanism to short-circuit and ignite. .
  • the first anode part can remove a considerable part of the dust in the gas. When the gas passes through the insulating mechanism, a considerable part of the dust has been eliminated, reducing the possibility of short-circuiting of the insulating mechanism caused by the dust.
  • the insulating mechanism includes insulating ceramic pillars.
  • the design of the first anode part is mainly to protect the insulating ceramic pillars from being polluted by the particles in the gas. Once the insulating ceramic pillars are polluted by the gas, the electric field anode and the electric field cathode will be connected, which will invalidate the dust accumulation function of the electric field anode.
  • the design of an anode part can effectively reduce the pollution of the insulating ceramic pillar and increase the use time of the product.
  • the cleaning and maintenance cycle corresponds to the insulating support of the electrode after use.
  • the length of the first anode part is long enough to remove some dust, reduce dust accumulated on the insulation mechanism and the cathode support plate, and reduce electric breakdown caused by the dust.
  • the length of the first anode portion occupies 1/10 to 1/4, 1/4 to 1/3, 1/3 to 1/2, 1/2 to 2/3 of the total length of the electric field anode. 2/3 to 3/4, or 3/4 to 9/10.
  • the second anode part is located behind the cathode support plate and the insulating mechanism in the gas flow direction.
  • the second anode part includes a dust accumulation section and a reserved dust accumulation section.
  • the dust accumulation section uses static electricity to adsorb particulate matter in the gas.
  • the dust accumulation section is to increase the dust accumulation area and prolong the use time of the electric field device.
  • the reserved dust section can provide failure protection for the dust section.
  • the dust accumulation section is reserved to further increase the dust accumulation area and improve the dust removal effect under the premise of meeting the design dust removal requirements.
  • the dust accumulation section is reserved to supplement the dust accumulation in the front section.
  • the first anode part and the second anode part may use different power sources.
  • the insulating mechanism is arranged outside the electric field flow channel between the electric field cathode and the electric field anode. Therefore, the insulation mechanism is suspended outside the electric field anode.
  • the insulating mechanism may be made of non-conductor temperature-resistant materials, such as ceramics, glass, and the like.
  • the material insulation that is completely airtight and air-free requires an insulation isolation thickness of> 0.3 mm/kv; and air insulation requires> 1.4 mm/kv.
  • the insulation distance can be set according to 1.4 times the distance between the electric field cathode and the electric field anode.
  • the insulating mechanism uses ceramics, and the surface is glazed; adhesives or organic materials cannot be used to fill the connection, and the temperature resistance is greater than 350 degrees Celsius.
  • the insulation mechanism includes an insulation part and a heat insulation part.
  • the material of the insulating part is ceramic material or glass material.
  • the insulating part may be an umbrella-shaped string of ceramic pillars or glass pillars with glaze on the inside and outside of the umbrella.
  • the distance between the outer edge of the umbrella string ceramic column or the glass column and the electric field anode is greater than or equal to 1.4 times the electric field distance, that is, greater than or equal to 1.4 times the electrode pitch.
  • the sum of the pitches of umbrella protrusions of the umbrella string ceramic columns or glass columns is greater than or equal to 1.4 times the insulation pitch of the umbrella string ceramic columns.
  • the total inner depth of the umbrella side of the umbrella string ceramic column or the glass column is greater than or equal to 1.4 times the insulation distance of the umbrella string ceramic column.
  • the insulating part can also be a columnar string of ceramic columns or glass columns with glaze on the inside and outside of the columns. In an embodiment of the present invention, the insulating portion may also be tower-shaped.
  • a heating rod is arranged in the insulating part, and when the temperature around the insulating part approaches the dew point, the heating rod is activated and heated. Due to the temperature difference between the inside and outside of the insulating part during use, condensation is likely to occur on the inside and outside of the insulating part.
  • the outer surface of the insulating part may spontaneously or be heated by gas to generate high temperature, and necessary isolation protection is required to prevent burns.
  • the heat insulation part includes a protective enclosure and a denitration purification reaction chamber located outside the insulation part.
  • the end of the insulating part that needs condensation location also needs to be insulated to prevent the environment and the heat dissipation high temperature heating condensation component.
  • the lead wires of the power supply of the electric field device are connected through the wall using umbrella-shaped string ceramic pillars or glass pillars, using elastic contacts to connect the cathode support plate in the wall, and plugging and unplugging the sealed insulating protective wiring cap outside the wall.
  • the insulation distance between the lead wire and the wall conductor and the wall is greater than the ceramic insulation distance of the umbrella string ceramic column or glass column.
  • the high voltage part removes the lead wire and is directly installed on the end to ensure safety.
  • the overall external insulation of the high voltage module is protected by ip68, and the medium is used for heat exchange and heat dissipation.
  • the electric field anode and the electric field cathode are respectively electrically connected to the two electrodes of the power supply.
  • the voltage applied to the electric field anode and the electric field cathode needs to select an appropriate voltage level.
  • the specific voltage level selected depends on the volume, temperature resistance, and dust holding rate of the electric field device.
  • the voltage is from 1kv to 50kv; first consider the temperature resistance conditions in the design, the parameters of the pole spacing and temperature: 1MM ⁇ 30 degrees, the dust area is greater than 0.1 square / thousand cubic meters / hour, and the electric field length is greater than 5 of the inscribed circle of a single tube
  • the air flow velocity of the control electric field is less than 9 m/s.
  • the electric field anode is composed of a first hollow anode tube and has a honeycomb shape.
  • the shape of the first hollow anode tube port may be circular or polygonal.
  • the inscribed circle of the first hollow anode tube ranges from 5-400mm, and the corresponding voltage is between 0.1-120kv, and the corresponding current of the first hollow anode tube is between 0.1-30A;
  • the tangent circle corresponds to different corona voltages, about 1KV/1MM.
  • the electric field device includes an electric field stage, the electric field stage includes a plurality of electric field generating units, and there may be one or more electric field generating units.
  • the electric field generating unit is also called a dust collecting unit.
  • the dust collecting unit includes the above-mentioned electric field anode and electric field cathode, and there are one or more dust collecting units.
  • the dust collection efficiency of the electric field device can be effectively improved.
  • each electric field anode has the same polarity
  • each electric field cathode has the same polarity.
  • the electric field levels are connected in series.
  • the electric field device further includes a plurality of connecting shells, and the series electric field stages are connected by the connecting shells; the distance between the electric field stages of two adjacent stages is more than 1.4 times the pole pitch.
  • the inventor of the present invention has discovered through research that the disadvantages of poor removal efficiency and high energy consumption of existing electric field devices are caused by electric field coupling.
  • the invention can significantly reduce the size (namely volume) of the electric field dust removal device by reducing the number of electric field couplings.
  • the size of the ionization dust removal device provided by the present invention is about one-fifth of the size of the existing ionization dust removal device.
  • the gas flow rate in the existing ionization dust removal device is set to about 1m/s, and the present invention can still obtain a higher gas flow rate when the gas flow rate is increased to 6m/s. Particle removal rate.
  • the size of the electric field dust removal device can be reduced.
  • the present invention can significantly improve the particle removal efficiency. For example, when the gas flow rate is about 1m/s, the prior art electric field dust removal device can remove about 70% of the particulate matter in the engine exhaust, but the present invention can remove about 99% of the particulate matter, even when the gas flow rate is 6m/s .
  • an asymmetric structure is adopted between the electric field cathode and the electric field anode.
  • polar particles are subjected to a force of the same magnitude but opposite in direction, and the polar particles reciprocate in the electric field; in an asymmetric electric field, the polar particles are subjected to two different forces, and the polar particles act towards Move in the direction of great force to avoid coupling.
  • the electric field device of the present invention forms an ionizing electric field between the electric field cathode and the electric field anode.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode so that the number of electric field couplings is ⁇ 3.
  • the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode may be: 1.667:1 to 1680:1; 3.334:1 to 13.34:1; 6.67:1-56.67:1; 13.34: 1-28.33:1.
  • This embodiment selects the dust collecting area of the electric field anode with a relatively large area and the discharge area of the relatively small electric field cathode.
  • the specific selection of the above area ratio can reduce the discharge area of the electric field cathode, reduce the suction force, and expand the dust collecting area of the electric field anode.
  • Expand the suction that is, the asymmetric electrode suction between the electric field cathode and the electric field anode will cause the charged dust to fall on the dust collecting surface of the electric field anode.
  • the polarity is changed, it can no longer be sucked away by the electric field cathode, and the electric field coupling is reduced. Achieve electric field coupling times ⁇ 3.
  • the dust collection area refers to the area of the working surface of the electric field anode.
  • the dust collection area is the inner surface area of the hollow regular hexagon tube, and the dust collection area is also called the dust accumulation area.
  • the discharge area refers to the area of the working surface of the electric field cathode. For example, if the electric field cathode is rod-shaped, the discharge area is the rod-shaped outer surface area.
  • the length of the electric field anode may be 10-180mm, 10-20mm, 20-30mm, 60-180mm, 30-40mm, 40-50mm, 50-60mm, 60-70mm, 70-80mm, 80mm. -90mm, 90-100mm, 100-110mm, 110-120mm, 120-130mm, 130-140mm, 140-150mm, 150-160mm, 160-170mm, 170-180mm, 60mm, 180mm, 10mm or 30mm.
  • the length of the electric field anode refers to the minimum length from one end to the other end of the working surface of the electric field anode. Choosing this length of the electric field anode can effectively reduce the electric field coupling.
  • the length of the electric field cathode may be 30-180mm, 54-176mm, 30-40mm, 40-50mm, 50-54mm, 54-60mm, 60-70mm, 70-80mm, 80-90mm, 90mm. -100mm, 100-110mm, 110-120mm, 120-130mm, 130-140mm, 140-150mm, 150-160mm, 160-170mm, 170-176mm, 170-180mm, 54mm, 180mm, or 30mm.
  • the length of the electric field cathode refers to the minimum length from one end to the other end of the working surface of the electric field cathode. Choosing this length of the electric field cathode can effectively reduce the electric field coupling.
  • the distance between the electric field anode and the electric field cathode may be 5-30mm, 2.5-139.9mm, 9.9-139.9mm, 2.5-9.9mm, 9.9-20mm, 20-30mm, 30-40mm, 40mm. -50mm, 50-60mm, 60-70mm, 70-80mm, 80-90mm, 90-100mm, 100-110mm, 110-120mm, 120-130mm, 130-139.9mm, 9.9mm, 139.9mm, or 2.5mm.
  • the distance between the anode of the electric field and the cathode of the electric field is also referred to as the electrode pitch.
  • the pole distance specifically refers to the minimum vertical distance between the working surfaces of the electric field anode and the electric field cathode. The selection of this pole spacing can effectively reduce the electric field coupling and make the electric field device have high temperature resistance characteristics.
  • the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm; the dust accumulation area of the electric field anode and the electric field cathode The ratio of the discharge area is 1.667:1 to 1680:1.
  • the multi-stage electric field dust removal method for a clean room system for semiconductor manufacturing may further include a method for reducing electric field coupling in air dust removal, including the following steps:
  • the ionization electric fields are generated by the electric field anode and the electric field cathode;
  • the electric field anode or/and the electric field cathode are selected.
  • the size of the electric field anode or/and the electric field cathode is selected such that the number of electric field couplings is ⁇ 3.
  • the ratio of the dust collection area of the electric field anode to the discharge area of the electric field cathode is selected.
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 1.667:1 to 1680:1.
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 6.67-56.67:1.
  • the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm; the dust accumulation area of the electric field anode and the electric field cathode The ratio of the discharge area is 1.667:1 to 1680:1.
  • the distance between the electric field anode and the electric field cathode is selected to be less than 150 mm.
  • the distance between the electric field anode and the electric field cathode is selected to be 2.5-139.9 mm. More preferably, the distance between the electric field anode and the electric field cathode is selected to be 5.0-100 mm.
  • the length of the electric field anode is selected to be 10-180 mm. More preferably, the length of the electric field anode is selected to be 60-180 mm.
  • the length of the electric field cathode is selected to be 30-180 mm. More preferably, the length of the electric field cathode is selected to be 54-176 mm.
  • the electric field device further includes an auxiliary electric field unit for generating an auxiliary electric field that is not parallel to the ionization dust removal electric field.
  • the electric field device further includes an auxiliary electric field unit, the ionization dust removal electric field includes a flow channel, and the auxiliary electric field unit is used to generate an auxiliary electric field that is not perpendicular to the flow channel.
  • the auxiliary electric field unit includes a first electrode, and the first electrode of the auxiliary electric field unit is disposed at or near the entrance of the ionization dust removal electric field.
  • the first electrode is a cathode.
  • the first electrode of the auxiliary electric field unit is an extension of the electric field cathode.
  • the auxiliary electric field unit includes a second electrode, and the second electrode of the auxiliary electric field unit is arranged at or near the outlet of the ionization dust removal electric field.
  • the second electrode is an anode.
  • the second electrode of the auxiliary electric field unit is an extension of the electric field anode.
  • the electrode of the auxiliary electric field and the electrode of the ionization dust removal electric field are arranged independently.
  • the ionizing electric field between the electric field anode and the electric field cathode is also called the first electric field.
  • a second electric field that is not parallel to the first electric field is formed between the electric field anode and the electric field cathode.
  • the flow channel of the second electric field and the ionization electric field are not perpendicular.
  • the second electric field is also called an auxiliary electric field, and can be formed by one or two auxiliary electrodes.
  • the auxiliary electrode can be placed at the entrance or exit of the ionizing electric field, and the auxiliary electrode can have a negative potential, Or positive potential.
  • the auxiliary electrode When the second electric field is formed by two auxiliary electrodes, one of the auxiliary electrodes can have a negative potential, and the other auxiliary electrode can have a positive potential; one auxiliary electrode can be placed at the entrance of the ionization electric field, and the other auxiliary electrode can be placed at the entrance of the ionization electric field.
  • the auxiliary electrode may be a part of the electric field cathode or the electric field anode, that is, the auxiliary electrode may be an extension of the electric field cathode or the electric field anode, and the length of the electric field cathode and the electric field anode are different.
  • the auxiliary electrode may also be a separate electrode, that is, the auxiliary electrode may not be a part of the electric field cathode or the electric field anode.
  • the voltage of the second electric field is different from the voltage of the first electric field and can be controlled separately according to the working conditions.
  • the auxiliary electrode includes the first electrode and/or the second electrode in the auxiliary electric field unit.
  • the multi-stage electric field dust removal method for a clean room system for semiconductor manufacturing provided by the present invention further includes: a method for providing an auxiliary electric field, including the following steps:
  • An auxiliary electric field is generated in the flow channel, and the auxiliary electric field is not perpendicular to the flow channel.
  • the auxiliary electric field ionizes the air.
  • the auxiliary electric field is generated by the auxiliary electric field unit.
  • the electric field device includes a front electrode between the entrance of the electric field device and the ionizing electric field formed by the electric field anode and the electric field cathode.
  • the gas flows through the front electrode from the entrance of the electric field device, the particles in the gas will be charged.
  • the shape of the front electrode may be a surface, a mesh, a perforated plate, or a plate.
  • the mesh shape is a shape including any porous structure.
  • the front electrode When the front electrode is in the shape of a plate, the front electrode may have a non-porous structure or a porous structure.
  • the front electrode has a hole structure, one or more air inlet through holes are provided on the front electrode.
  • the shape of the air intake through hole may be polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus.
  • the outline size of the air inlet through hole may be 0.1-3mm, 0.1-0.2mm, 0.2-0.5mm, 0.5-1mm, 1-1.2mm, 1.2-1.5mm, 1.5-2mm, 2- 2.5mm, 2.5-2.8mm, or 2.8-3mm.
  • the gas with particles passes through the through holes on the front electrode, which increases the contact area between the gas with particles and the front electrode and increases the charging efficiency.
  • the through hole on the front electrode is any hole that allows substances to flow through the front electrode.
  • the shape of the front electrode can be one or more of solid, liquid, gas molecular clusters, plasma, conductive mixed state substances, biological substances naturally mixed with conductive substances, or artificial processing of objects to form conductive substances.
  • the front electrode is solid, solid metal, such as 304 steel, or other solid conductors, such as graphite, can be used.
  • the front electrode is a liquid, it may be an ion-containing conductive liquid.
  • the front electrode charges the particles in the gas.
  • the electric field anode exerts an attractive force on the charged particles, causing the charged particles to move toward the electric field anode until the charged particles adhere to the electric field anode.
  • the front electrode introduces electrons into the particles in the gas, and the electrons are transferred between the front electrode and the electric field anode to charge more particles.
  • the particles in the gas conduct electrons between the front electrode and the electric field anode and form a current.
  • the front electrode charges the particulate matter in the gas by contacting the particulate matter in the gas. In an embodiment of the present invention, the front electrode transfers electrons to the particulate matter in the gas by contacting the particulate matter in the gas, and charges the particulate matter in the gas.
  • the front electrode is perpendicular to the electric field anode. In one embodiment of the present invention, the front electrode is parallel to the electric field anode. In an embodiment of the present invention, the front electrode adopts a metal wire mesh. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode is different from the voltage between the electric field cathode and the electric field anode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage. The initial corona voltage is the minimum value of the voltage between the electric field cathode and the electric field anode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode may be 0.1-2 kv/mm.
  • the electric field device includes a flow channel, and the front electrode is located in the flow channel.
  • the ratio of the cross-sectional area of the front electrode to the cross-sectional area of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40% , Or 50%.
  • the cross-sectional area of the front electrode refers to the sum of the area of the solid part of the front electrode along the cross-section.
  • the front electrode has a negative potential.
  • FIG. 1 shows a schematic diagram of the structure of the first electric field device in the multi-stage electric field dust removal system of this embodiment.
  • the electric field device includes an electric field device inlet 1011, a front electrode 1013, and an insulating mechanism 1015.
  • the front electrode 1013 is arranged at the entrance 1011 of the electric field device, the front electrode 1013 is a conductive mesh plate, and the conductive mesh plate is used to conduct electrons into the gas after being powered on.
  • the electric field device includes an electric field anode 10141 and an electric field cathode 10142 arranged in the electric field anode 10141.
  • An asymmetric electrostatic field is formed between the electric field anode 10141 and the electric field cathode 10142, wherein the gas to be contained in particulate matter enters the exhaust port through the exhaust port.
  • the gas is ionized, so that the particles obtain a negative charge, move to the electric field anode 10141, and deposit on the electric field anode 10141.
  • the inside of the electric field anode 10141 is composed of a honeycomb-shaped and hollow anode tube bundle group, and the shape of the port of the anode tube bundle is a hexagon.
  • the electric field cathode 10142 includes a plurality of electrode rods, which pierce each anode tube bundle in the anode tube bundle one by one, wherein the shape of the electrode rod is needle-like, polygonal, burr-like, and threaded rod. Shaped or columnar.
  • the ratio of the dust collection area of the electric field anode 10141 to the discharge area of the electric field cathode 10142 is 1680:1, the distance between the electric field anode 10141 and the electric field cathode 10142 is 9.9 mm, the length of the electric field anode 10141 is 60 mm, and the length of the electric field cathode 10142 It is 54mm.
  • the outlet end of the electric field cathode 10142 is lower than the outlet end of the electric field anode 10141, and the inlet end of the electric field cathode 10142 is flush with the inlet end of the electric field anode 10141.
  • the insulation mechanism 1015 includes an insulation part and a heat insulation part.
  • the insulating part is made of ceramic material or glass material.
  • the insulating part is an umbrella-shaped string of ceramic pillars or glass pillars, or a pillar-shaped string of ceramic pillars or glass pillars, and the inside and outside of the umbrella or the pillars are covered with glaze.
  • the electric field cathode 10142 is mounted on the cathode support plate 10143, and the cathode support plate 10143 and the electric field anode 10141 are connected through an insulating mechanism 1015.
  • the insulation mechanism 1015 is used to achieve insulation between the cathode support plate 10143 and the electric field anode 10141.
  • the electric field anode 10141 includes a first anode portion 101412 and a second anode portion 101411, that is, the first anode portion 101412 is close to the entrance of the electric field device, and the second anode portion 101411 is close to the outlet of the electric field device.
  • the cathode support plate and the insulation mechanism are between the first anode part 101412 and the second anode part 101411, that is, the insulation mechanism 1015 is installed in the middle of the ionization electric field or the middle of the electric field cathode 10142, which can support the electric field cathode 10142 well, and
  • the electric field cathode 10142 is fixed relative to the electric field anode 10141, so that the electric field cathode 10142 and the electric field anode 10141 maintain a set distance.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • FIG. 2 For the structure diagram of the electric field generating unit of this embodiment, refer to FIG. 2.
  • the electric field generating unit of this embodiment Refer to FIG. 3 for the AA view of the electric field generating unit. Refer to FIG. 4 for the AA view of the electric field generating unit with the length and angle of the electric field generating unit in this embodiment.
  • FIG. 2 it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power supply, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 6.67:1, the distance L3 between the electric field anode 4051 and the electric field cathode 4052 is 9.9 mm, and the electric field anode 4051
  • the length L1 is 60mm
  • the length L2 of the electric field cathode 4052 is 54mm
  • the electric field anode 4051 includes a fluid channel
  • the fluid channel includes an inlet end and an outlet end
  • the electric field cathode 4052 is placed in the fluid channel
  • the electric field cathode 4052 extends along the direction of the fluid channel of the dust collecting electrode
  • the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052
  • the outlet end of the electric field anode 4051 and the near outlet end of the electric field cathode 4052 have an angle
  • the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units.
  • each electric field anode has the same polarity
  • each electric field cathode has the same polarity.
  • the electric field stages of the plurality of electric field stages are connected in series, and the series electric field stages are connected by a connecting shell.
  • the distance between the electric field stages of two adjacent stages is greater than 1.4 times of the pole spacing.
  • the electric field levels are two levels, namely the first electric field 4053 and the second electric field 4054.
  • the first electric field 4053 and the second electric field 4054 The secondary electric field 4054 is connected in series through the connecting housing 4055.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1680:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 139.9 mm, and the electric field anode 4051 length
  • the electric field cathode 4052 has a length of 180 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected, and the number of electric field couplings ⁇ 3, which can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles in the air by the electric field, and save electric field power 20- 40%.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.667:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.4 mm, and the electric field anode 4051 length
  • the electric field cathode 4052 has a length of 30 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected, and the number of electric field couplings is less than 3, which can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles by the electric field, and save the electric energy of the electric field by 10-30% .
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 in this embodiment is a hollow regular hexagonal tube, the electric field cathode 4052 is rod-shaped, and the electric field cathode 4052 penetrates the electric field anode 4051.
  • the dust collection of the electric field anode 4051 The ratio of the area to the discharge area of the electric field cathode 4052 is 6.67:1, the distance L3 between the electric field anode 4051 and the electric field cathode 4052 is 9.9 mm, the electric field anode 4051 length L1 is 60 mm, and the electric field cathode 4052 length L2 is 54 mm.
  • the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 extends in the direction of the fluid channel of the dust collector.
  • the typical tail gas particle pm0.23 dust collection efficiency is above 99.99%, and the typical 23nm particle removal efficiency is above 99.99%.
  • the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units.
  • each electric field anode has the same polarity
  • each electric field cathode has the same polarity.
  • the electric field stages of the plurality of electric field stages are connected in series, and the series electric field stages are connected by a connecting shell.
  • the distance between the electric field stages of two adjacent stages is greater than 1.4 times of the pole spacing.
  • the electric field has two levels, namely, the first electric field 4053 and the second electric field 4054.
  • the first electric field 4053 and the second electric field 4054 are connected in series through the connecting housing 4055.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 is 1680. :1.
  • the distance between the electric field anode 4051 and the electric field cathode 4052 is 139.9 mm
  • the electric field anode 4051 has a length of 180 mm
  • the electric field cathode 4052 has a length of 180 mm.
  • the electric field anode 4051 includes a fluid channel, and the fluid channel includes an inlet end and At the outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 extends along the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the electric field anode 4052
  • the outlet end of the 4051 is flush with the near outlet end of the electric field cathode 4052, and under the action of the electric field anode 4051 and the electric field cathode 4052, more materials to be processed can be collected, which ensures higher dust collection efficiency of the electric field device.
  • the dust collection efficiency of typical tail gas particles pm0.23 is over 99.99%, and the removal efficiency of typical 23nm particles is over 99.99%.
  • the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units.
  • each electric field anode has the same polarity
  • each electric field cathode has the same polarity.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 is 1.667 :1.
  • the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.4 mm.
  • the electric field anode 4051 has a length of 30 mm and the electric field cathode 4052 has a length of 30 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the cathode 4052 extends in the direction of the fluid channel of the dust collector.
  • the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052.
  • the dust collection efficiency of typical tail gas particles pm0.23 is above 99.99%, and the typical removal efficiency of 23nm particles is It is 99.99% or more.
  • the electric field anode 4051 and the electric field cathode 4052 constitute a dust collection unit, and there are multiple dust collection units, so that the use of multiple dust collection units effectively improves the dust collection efficiency of the electric field device.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 27.566:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.3 mm, and the electric field anode 4051 length
  • the electric field cathode 4052 has a length of 4 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected to realize the number of electric field couplings ⁇ 3, which ensures that the dust removal efficiency of the electric field generating unit is higher.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.108:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.3 mm, and the electric field anode: 051 has a length of 60mm, the electric field cathode 4052 has a length of 200mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 Extending in the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052. Under the action of the electric field catho
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 3065:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 249 mm, and the electric field anode 4051 length is 2000mm, the electric field cathode 4052 has a length of 180mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 collects dust along the The direction of the polar fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.338:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 5 mm, and the electric field anode 4051 length is
  • the electric field cathode 4052 has a length of 10 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the direction of the polar fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode 4052 Under the action of, more materials to be processed can be collected, and the number of electric field couplings is less than or equal to 3, which ensures that the dust removal efficiency of the electric field generating unit is higher.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field device in this embodiment can be applied to the one-stage electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • FIG. 6 for the schematic diagram of the electric field device in this embodiment.
  • the electric field device includes an electric field cathode 5081 and an electric field anode 5082 respectively electrically connected to the cathode and anode of the DC power supply, and the auxiliary electrode 5083 is electrically connected to the anode of the DC power supply.
  • the electric field cathode 5081 has a negative potential
  • the electric field anode 5082 and the auxiliary electrode 5083 both have a positive potential.
  • the auxiliary electrode 5083 and the electric field anode 5082 are fixedly connected in this embodiment. After the electric field anode 5082 is electrically connected to the anode of the DC power supply, the auxiliary electrode 5083 is also electrically connected to the anode of the DC power supply, and the auxiliary electrode 5083 and the electric field anode 5082 have the same positive potential.
  • the auxiliary electrode 5083 in this embodiment can extend in the front-to-back direction, that is, the length direction of the auxiliary electrode 5083 can be the same as the length direction of the electric field anode 5082.
  • the electric field anode 5082 is tubular, the electric field cathode 5081 is rod-shaped, and the electric field cathode 5081 penetrates the electric field anode 5082.
  • the auxiliary electrode 5083 in this embodiment is also tubular, and the auxiliary electrode 5083 and the electric field anode 5082 constitute an anode tube 5084.
  • the front end of the anode tube 5084 is flush with the electric field cathode 5081, and the rear end of the anode tube 5084 exceeds the rear end of the electric field cathode 5081 backward.
  • the part of the anode tube 5084 that extends backward is the auxiliary electrode 5083.
  • the electric field anode 5082 and the electric field cathode 5081 have the same length, and the electric field anode 5082 and the electric field cathode 5081 are opposite in the front and rear direction; the auxiliary electrode 5083 is located behind the electric field anode 5082 and the electric field cathode 5081. In this way, an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field cathode 5081, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081.
  • the negatively charged oxygen ions will combine with the substance to be treated in the process of moving to the electric field anode 5082 and backward, because the oxygen ions have a backward moving speed
  • the oxygen ions are combined with the substance to be treated, there will be no strong collision between the two, thereby avoiding large energy consumption due to the strong collision, making the oxygen ions easy to combine with the substance to be treated, and making
  • the charging efficiency of the substances to be treated in the gas is higher, and furthermore, under the action of the electric field anode 5082 and the anode tube 5084, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.
  • the electric field anode 5082, the auxiliary electrode 5083, and the electric field cathode 5081 constitute a dust removal unit, and there are multiple dust removal units to effectively improve the dust removal efficiency of the electric field device by using multiple dust removal units.
  • the above-mentioned substance to be processed may be granular dust.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field cathode 5081 and the electric field anode 5082, and the discharge electric field is an electrostatic field.
  • the auxiliary electrode 5083 Without the auxiliary electrode 5083, the ions flow in the electric field between the electric field cathode 5081 and the electric field anode 5082 along the direction perpendicular to the electrodes, and flow back and forth between the two electrodes, causing the ions to be folded back and forth between the electrodes for consumption.
  • the auxiliary electrode 5083 is used to stagger the relative positions of the electrodes to form a relative imbalance between the electric field anode 5082 and the electric field cathode 5081.
  • an auxiliary electrode 5083 is used to form an electric field capable of directional ion flow.
  • the collection rate of the electric field device for particles entering the electric field in the direction of ion flow is nearly double that of particles entering the electric field in the direction of counter ion flow, thereby improving the efficiency of electric field dust accumulation and reducing electric field power consumption.
  • the main reason for the low dust removal efficiency of the dust collecting electric field in the prior art is that the direction of the dust entering the electric field is opposite or perpendicular to the direction of the ion flow in the electric field, which causes the dust and the ion flow to collide violently with each other and produce large energy consumption. It also affects the charging efficiency, thereby reducing the electric field dust collection efficiency in the prior art and increasing the energy consumption.
  • the electric field device in this embodiment can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention, including the electric field cathode and the electric field anode which are electrically connected to the cathode and anode of the DC power supply, and the auxiliary electrode It is electrically connected with the cathode of the DC power supply.
  • the auxiliary electrode and the electric field cathode both have a negative electric potential, and the electric field anode has a positive electric potential.
  • the auxiliary electrode can be fixedly connected to the electric field cathode. In this way, after the electric field cathode is electrically connected to the cathode of the DC power source, the auxiliary electrode is also electrically connected to the cathode of the DC power source. At the same time, the auxiliary electrode in this embodiment extends in the front-rear direction.
  • the electric field anode is tubular, the electric field cathode is rod-shaped, and the electric field cathode penetrates the electric field anode.
  • the above-mentioned auxiliary electrode in this embodiment is also rod-shaped, and the auxiliary electrode and the electric field cathode constitute a cathode rod. The front end of the cathode rod forwards beyond the front end of the electric field anode, and the part of the cathode rod that exceeds the electric field anode forward is the auxiliary electrode.
  • the length of the electric field anode and the electric field cathode are the same, and the electric field anode and the electric field cathode are opposite in the front and rear direction; the auxiliary electrode is located in front of the electric field anode and the electric field cathode.
  • an auxiliary electric field is formed between the auxiliary electrode and the electric field anode, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode and the electric field cathode, so that the negatively charged oxygen ions between the electric field anode and the electric field cathode
  • the flow has a backward movement speed.
  • the negatively charged oxygen ions will be combined with the substance to be treated during the process of moving to the electric field anode and backward, because oxygen ions have a backward moving speed
  • the oxygen ions are combined with the substance to be treated, there will be no strong collision between the two, thereby avoiding large energy consumption due to the strong collision, making the oxygen ions easy to combine with the substance to be treated, and making The charging efficiency of the substances to be treated in the gas is higher, and more substances to be treated can be collected under the action of the anode of the electric field, which ensures that the dust removal efficiency of the electric field device is higher.
  • the electric field anode, the auxiliary electrode, and the electric field cathode constitute a dust removal unit, and there are multiple dust removal units, so that the multiple dust removal units can effectively improve the dust removal efficiency of the electric field device.
  • the above-mentioned substance to be processed may be granular dust.
  • the electric field device in this embodiment can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • FIG. 7 for the schematic diagram of the electric field device in this embodiment.
  • the electric field device includes an auxiliary electrode 5083, and the auxiliary electrode 5083 extends in the left-right direction.
  • the length direction of the auxiliary electrode 5083 in this embodiment is different from the length direction of the electric field anode 5082 and the electric field cathode 5081.
  • the auxiliary electrode 5083 may be perpendicular to the electric field anode 5082.
  • the electric field cathode 5081 and the electric field anode 5082 are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the anode of the DC power supply.
  • the electric field cathode 5081 has a negative potential
  • the electric field anode 5082 and the auxiliary electrode 5083 both have a positive potential.
  • the electric field cathode 5081 and the electric field anode 5082 are opposed to each other in the front and rear direction, and the auxiliary electrode 5083 is located behind the electric field anode 5082 and the electric field cathode 5081.
  • an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field cathode 5081.
  • the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081, so that the electric field anode 5082 and the electric field cathode 5081 are
  • the stream of negatively charged oxygen ions has a backward moving speed.
  • the negatively charged oxygen ions will be combined with the substance to be treated in the process of moving to the electric field anode 5082 and backward.
  • Oxygen ions have a backward moving speed.
  • the oxygen ions are combined with the material to be treated, there will be no strong collision between the two, thus avoiding the large energy consumption caused by the strong collision, making the oxygen ions easy to interact with
  • the combination of the substances to be treated makes the charging efficiency of the substances to be treated in the gas higher. Then, under the action of the electric field anode 5082, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.
  • the electric field device in this embodiment can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • FIG. 8 for a schematic diagram of the electric field device in this embodiment.
  • the electric field device includes an auxiliary electrode 5083, and the auxiliary electrode 5083 extends in the left-right direction.
  • the length direction of the auxiliary electrode 5083 in this embodiment is different from the length direction of the electric field anode 5082 and the electric field cathode 5081.
  • the auxiliary electrode 5083 may be perpendicular to the electric field cathode 5081.
  • the electric field cathode 5081 and the electric field anode 5082 are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the cathode of the DC power supply.
  • the electric field cathode 5081 and the auxiliary electrode 5083 both have a negative electric potential, and the electric field anode 5082 has a positive electric potential.
  • the electric field cathode 5081 and the electric field anode 5082 are opposite to each other in the front and rear direction, and the auxiliary electrode 5083 is located in front of the electric field anode 5082 and the electric field cathode 5081.
  • an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field anode 5082.
  • the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081, so that the electric field anode 5082 and the electric field cathode 5081 are
  • the stream of negatively charged oxygen ions has a backward moving speed.
  • the negatively charged oxygen ions will be combined with the substance to be treated in the process of moving to the electric field anode 5082 and backward.
  • Oxygen ions have a backward moving speed.
  • the oxygen ions are combined with the material to be treated, there will be no strong collision between the two, thus avoiding the large energy consumption caused by the strong collision, making the oxygen ions easy to interact with
  • the combination of the substances to be treated makes the charging efficiency of the substances to be treated in the gas higher. Then, under the action of the electric field anode 5082, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.
  • this embodiment provides an electric field device, which can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • the structure diagram of the electric field device in this embodiment is shown in the figure 9.
  • the electric field device includes an electric field device inlet 3085, a flow channel 3086, an electric field flow channel 3087, and an electric field device outlet 3088 that are connected in sequence.
  • a front electrode 3083 is installed in the flow channel 3086.
  • the ratio of the area to the cross-sectional area of the flow channel 3086 is 99%-10%.
  • the electric field device also includes an electric field cathode 3081 and an electric field anode 3082.
  • the electric field flow channel 3087 is located between the electric field cathode 3081 and the electric field anode 3082.
  • the working principle of the electric field device of the present invention is that the pollutant-containing gas enters the flow channel 3086 through the entrance 3085 of the electric field device, the front electrode 3083 installed in the flow channel 3086 conducts electrons to some pollutants, and some pollutants are charged. After the substance enters the electric field flow channel 3087 from the flow channel 3086, the electric field anode 3082 exerts an attractive force on the charged pollutants, and the charged pollutants move to the electric field anode 3082 until the part of the pollutants adhere to the electric field anode 3082.
  • the electric field An ionizing electric field is formed between the electric field cathode 3081 and the electric field anode 3082 in the flow channel 3087.
  • the ionizing electric field will charge another part of the uncharged pollutants, so that another part of the pollutants will also be attracted by the electric field anode 3082 after being charged.
  • it is attached to the electric field anode 3082, so that the above-mentioned electric field device is used to make the pollutants more efficient and fully charged, thereby ensuring that the electric field anode 3082 can collect more pollutants and ensuring the pollutant collection efficiency of the electric field device of the present invention higher.
  • the cross-sectional area of the front electrode 3083 refers to the sum of the area of the front electrode 3083 along the solid part of the cross-section.
  • the ratio of the cross-sectional area of the front electrode 3083 to the cross-sectional area of the flow channel 3086 may be 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.
  • the front electrode 3083 and the electric field cathode 3081 are electrically connected to the cathode of the DC power supply, and the electric field anode 3082 is electrically connected to the anode of the DC power supply.
  • the front electrode 3083 and the electric field cathode 3081 both have a negative electric potential, and the electric field anode 3082 has a positive electric potential.
  • the front electrode 3083 in this embodiment may have a mesh shape, that is, a plurality of through holes are provided.
  • the structural feature of the front electrode 3083 with through holes is used to facilitate the gas and pollutants to flow through the front electrode 3083, and make the pollutants in the gas contact the front electrode 3083 more fully.
  • the front electrode 3083 can conduct electrons to more pollutants, and the pollutants have a higher charging efficiency.
  • the electric field anode 3082 is tubular, the electric field cathode 3081 is rod-shaped, and the electric field cathode 3081 penetrates the electric field anode 3082.
  • the electric field anode 3082 and the electric field cathode 3081 have an asymmetric structure.
  • the ionizing electric field formed between the electric field anode 3082 will charge the pollutants, and under the attractive force exerted by the electric field anode 3082, the charged pollutants are collected on the inner wall of the electric field anode 3082.
  • both the electric field anode 3082 and the electric field cathode 3081 extend in the front-rear direction, and the front end of the electric field anode 3082 is located in front of the front end of the electric field cathode 3081 in the front-rear direction.
  • the rear end of the electric field anode 3082 is located behind the rear end of the electric field cathode 3081 in the front-rear direction.
  • the length of the electric field anode 3082 in the forward and backward directions is longer, so that the adsorption surface area on the inner wall of the electric field anode 3082 is larger, so that the attraction to pollutants with negative potential is greater and more can be collected. Pollutants.
  • the electric field cathode 3081 and the electric field anode 3082 constitute an ionization unit.
  • the electric field cathode 3081 is also called a corona charged electrode.
  • the aforementioned DC power supply is specifically a DC high-voltage power supply.
  • a DC high voltage is connected between the front electrode 3083 and the electric field anode 3082 to form a conductive loop; a DC high voltage is connected between the electric field cathode 3081 and the electric field anode 3082 to form an ionization discharge corona electric field.
  • the front electrode 3083 is a densely distributed conductor. When the easily charged dust passes through the front electrode 3083, the front electrode 3083 directly charges the electrons to the dust.
  • the dust is then adsorbed by the electric field anode 3082 of the opposite electrode; at the same time, the uncharged dust is formed by the electric field cathode 3081 and the electric field anode 3082.
  • the ionization zone, the ionized oxygen formed in the ionization zone will charge the electrons to the dust, so that the dust will continue to be charged and absorbed by the electric field anode 3082 of the opposite electrode.
  • the electric field device in this embodiment can form two or more power-on modes.
  • the ionization discharge corona electric field formed between the electric field cathode 3081 and the electric field anode 3082 ionized oxygen can be used to charge the pollutants, and then the electric field anode 3082 can be used to collect the pollutants;
  • the front electrode 3083 is used to directly electrify the pollutant, so that the pollutant is fully charged and adsorbed by the electric field anode 3082.
  • This embodiment provides a clean room system for semiconductor manufacturing, including a clean room and a multi-level electric field dust removal system.
  • the gas inlet of the clean room is in communication with the dust removal system outlet of the multi-level electric field dust removal system.
  • the system 102 includes at least two electric field devices in the foregoing embodiments 1-16, and all the electric field devices are connected in series.
  • the air needs to first flow through all the electric field devices connected in series in the multi-stage electric field dust removal system, so that the multi-stage electric field dust removal system can effectively remove the dust waiting to be processed in the air.
  • the removal efficiency of typical 23nm particles is above 99.99%. Ensure that the air is cleaner and meet the air purification requirements in the semiconductor manufacturing plant, and the dust-removed gas is input into the clean room.
  • This embodiment provides a method for designing a semiconductor manufacturing clean room system, which includes the following steps:
  • This embodiment provides a clean room system 100 for semiconductor manufacturing, including a clean room 101 and a multi-level electric field dust removal system 102.
  • the gas inlet of the clean room 101 is connected to the dust removal system outlet of the multi-level electric field dust removal system 102.
  • the multi-stage electric field dust removal system 102 includes the electric field device 1021 (first-stage electric field device) in the above-mentioned embodiment 1 and the electric field device 1022 (second-stage electric field device) in the embodiment, and the two electric field devices are connected in series.
  • the multi-stage electric field dust removal method provided in this embodiment includes: the gas enters the multi-stage electric field dust removal system, first enters the first-stage electric field device for ionization and dust removal, and then the gas enters the second-stage electric field device for ionization and dust removal, and passes through the multi-stage electric field dust removal system
  • the purified gas after purification treatment enters the clean room.
  • Figure 10 is a schematic diagram of the structure of the clean room system in this embodiment.
  • the number of solid particles (PN value) of different sizes in the gas is detected at the inlet, outlet, and outlet of the first-level electric field device, respectively, and the specific detection particle size is 23nm PN values of, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, 10 ⁇ m solid particles, the detection results are shown in Table 1.
  • the data in Table 1 are the average of 6 samples.
  • the PN value at the entrance of the first-level electric field device in Table 1 is the PN value of the original gas entering the multi-level electric field dust removal system.
  • the concentration of ozone in the gas is detected at the inlet and outlet of the first-level electric field device, and the outlet of the second-level electric field device.
  • the test results are shown in Table 2.
  • the data in Table 2 are all sampled 6 times average value.
  • the ozone concentration value at the entrance of the first-level electric field device in Table 2 is the ozone concentration value in the original gas entering the multi-level electric field dust removal system.
  • This embodiment also provides a method for designing a multi-stage electric field dust removal system for a semiconductor manufacturing clean room system, which includes the following steps:
  • the power supply voltage of the second-level electric field device is 8.1KV
  • the power supply voltage of the second-level electric field device is 7.2KV
  • the power supply voltage of the third-level electric field device is 6.3KV
  • This embodiment provides a clean room system 100 for semiconductor manufacturing, including a clean room 101 and a multi-level electric field dust removal system 102.
  • the gas inlet of the clean room 101 is connected to the dust removal system outlet of the multi-level electric field dust removal system 102.
  • the multi-stage electric field dust removal system 102 includes the electric field device 1021 (first-level electric field device) in the above-mentioned embodiment 1, the electric field device 1022 (the second-stage electric field device) in the first embodiment and the electric field device in the first embodiment 1023 (Level 3 electric field device), the three electric field devices are connected in series.
  • the multi-stage electric field dust removal method provided by this embodiment includes: the gas enters the multi-stage electric field dust removal system, sequentially enters the first-stage electric field device, the second-stage electric field device, and the third-stage electric field device for ionization and dust removal, and the multi-stage electric field dust removal system
  • the purified gas after purification treatment enters the clean room.
  • Figure 11 is a schematic diagram of the structure of the clean room system in this embodiment.
  • the number of solid particles of different sizes in the gas (PN)
  • the specific detection particle size is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, 10 ⁇ m solid particles PN value
  • the detection results are shown in Table 3, and the data in Table 3 are the average of 6 samples.
  • the PN value at the entrance of the first-level electric field device in Table 3 is the PN value of the original gas entering the multi-level electric field dust removal system.
  • the concentration of ozone in the gas is detected at the inlet and outlet of the first-level electric field device, the outlet of the second-level electric field device, and the outlet of the third-level electric field device.
  • the test results are shown in Table 4.
  • the data in 4 are the average of 6 samplings.
  • the ozone concentration value at the entrance of the first-level electric field device in Table 4 is the ozone concentration value in the original gas entering the multi-level electric field dust removal system.
  • the semiconductor manufacturing clean room system designed in this embodiment and the multi-level electric field dust removal system and multi-level electric field dust removal method provided make the total dust removal efficiency of the multi-level electric field dust removal system greater than 99.99% and the ozone output less than 30 ppm.
  • the gas entering the clean room meets the requirements of semiconductor manufacturing.
  • This embodiment provides a semiconductor manufacturing method, including the following steps:
  • the electric field dust removal system in this embodiment includes the multi-level electric field dust removal system of embodiment 18 or embodiment 19;
  • the purified gas after dedusting by the electric field enters the clean room to provide purified gas for semiconductor manufacturing in the clean room.
  • a thin film is formed on a substrate by a CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition) process.
  • CVD Chemical Vapor Deposition
  • PVD Physical Vapor Deposition
  • the formation of the groove includes the following steps:
  • the exposed film is etched to expose part of the substrate surface to form a channel.
  • the photoresist can be a positive glue or a reverse glue.
  • the material of the substrate may be silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide.
  • the main component of the thin film is one or any combination of silicon nitride, silicon oxide, silicon carbide, and polysilicon.
  • the etching may be dry etching or wet etching.
  • step S3 the ion infiltration is diffusion or ion implantation.
  • step S3 the electronic characteristic is a PN junction.
  • the present invention effectively overcomes various shortcomings in the prior art and has high industrial value.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Animal Behavior & Ethology (AREA)
  • Veterinary Medicine (AREA)
  • Public Health (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrostatic Separation (AREA)

Abstract

一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法，所述多级电场除尘方法包括如下步骤：使气体通过多级电场除尘系统串联的每个电场装置；给每个电场装置施加电压，所述电压足以确保电场除尘系统总除尘效率(100％-(100％-P1％)*(100％-P2％)*……*(100％-Pn％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P1％、P2％……Pn％依次分别为第1级、第2级、……第n级电场装置的除尘效率，n为大于1的整数；将除尘后的气体输入洁净室。该方法在高流速下实现颗粒物有效脱除，所需的电场装置体积小，成本低，且可降低运行电费，同时臭氧输出量控制一定范围内，满足半导体制造环境的要求。

Description

一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法 技术领域
本发明属于空气净化领域，特别是涉及一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法。
背景技术
随着科技的进步，半导体器件的尺寸越来越小，对半导体制造车间环境的要求也越来越高。洁净室是半导体制造过程中常用的制造车间环境，目的是为了避免颗粒、湿度、温度等对半导体材料造成污染，进而影响半导体的成品率及可靠性。根据生产工艺对生产环境的洁净度要求，各洁净室内具有不同的空气洁净度等级，通常通过洁净室内某个颗粒粒径的最大浓度限值来划分。相应的，不同空气洁净度等级对进入洁净室的气流洁净度要求也不一样。
一般来说，现有半导体制造厂房为三层建筑，洁净室被安排在厂房的中间层即第2层，厂房第3层安装有净化系统，包括第3层地板与第2层顶层之间安装的过滤棉，空气从第3层进入，进入第3层的空气经过净化系统进行净化，净化后的气体输入到第2层的洁净室，洁净室产生的气体排入厂房第1层，第1层始终保持负压，确保第2层洁净室向第1层始终保持出风，灰尘吸不进。
而且，现有半导体制造厂房占用空间大，建设成本高；厂房第2层与第3层之间铺有约1米后的过滤棉，需要定期更换，这都导致使用成本增加。
目前还采用电场装置对含尘气体所包含的颗粒进行除尘净化，其基本原理为，利用高压放电产生等离子，使颗粒带电，然后将带电的颗粒吸附至集尘电极上，实现电场除尘。虽然现有的电场装置能够克服现有半导体制造厂房中占用空间大、建设成本高、耗电量大的缺点，但是，目前半导体制造对除尘要求越来越高，现有电场装置无法满足相应要求。例如现有半导体制造尺寸普遍在100nm以下，50nm的灰尘颗粒只允许2个/m 3，现有电场装置还不能有效地除掉这个级别的颗粒。
同时，现有的电场除尘装置中，伴随着电场放电，会产生一定浓度的臭氧。一般来说，为了获得较高的除尘效率，需要采用较高的电场电压。但当电场电压增加到一定的数值，满足了臭氧形成所需要的能量时，臭氧含量增加。高浓度的臭氧不仅会影响人的身体健康，还会加速材料和设备腐蚀氧化，加速材料消耗，减少设备使用寿命。若在洁净室内的臭氧含量超过国家或国际标准，会恶化整个洁净室的工作环境。
为了减小臭氧含量，目前通常采用以下四种方法，一是随气流流动，臭氧自行衰减； 二是升高气流流经环境的温度，使臭氧迅速还原成氧气；三是利用氧化还原反应，将臭氧与还原性物质反应，实现臭氧的消解；四是利用吸附剂或吸附装置高效去除臭氧，如活性炭。以上方式需要增加气流通道的长度或者额外增加升温设备、除臭氧设备，才能达到较为理想的臭氧去除效果，存在体积大、成本高、且不容易控制等缺点。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种用于半导体制造的洁净室系统及半导体制造系统，以及一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法，还提供一种用于设计半导体制造洁净室系统多级电场除尘系统的方法，解决静电除尘效率与臭氧浓度过量的矛盾，以及现有半导体制造领域空气净化技术耗电量大、体积大、成本高、无法脱除空气中纳米级颗粒物中的至少一个技术问题。本发明的一些实施例可在气体流速6m/s的工况下，实现粒径23nm颗粒物脱除效率达到99.99％以上，脱除效率高，因此，本发明在高流速下实现颗粒物有效脱除，所需的电场装置体积小，成本低，且可降低运行电费；同时，本发明的一些实施例对气体中粒径23nm颗粒物脱除效率达到99.99％以上，臭氧输出量控制一定范围内，满足半导体制造环境的要求。
为实现上述目的及其他相关目的，本发明提供如下技术方案：
1.本发明提供的示例1：一种用于半导体制造的洁净室系统，包括洁净室、多级电场除尘系统；
所述洁净室包括气体入口；所述多级电场除尘系统包括除尘系统入口、除尘系统出口、至少两个串联的电场装置；所述洁净室的气体入口与所述多级电场除尘系统的除尘系统出口连通。
2.本发明提供的示例2：包括上述示例1，其中，每个所述电场装置包括电场阴极和电场阳极，所述电场阴极和所述电场阳极用于产生电离电场。
3.本发明提供的示例3：包括上述示例1或2，其中，所述多级电场除尘系统还包括电源装置，每个所述电场装置的电场阳极和电场阴极分别与所述电源装置的两个电极电性连接。
4.本发明提供的示例4：包括上述示例3，其中，所述电源装置为所述多级电场除尘系统中每个所述电场装置提供同一电压。
5.本发明提供的示例5：包括上述示例3，其中，所述电源装置为所述多级电场除尘系统中每个所述电场装置提供不同电压。
6.本发明提供的示例6：包括上述示例3至5中的任一项，其中，所述电源装置给每个电场装置提供的电压值足以确保多级电场除尘系统总除尘效率(100％-(100％-P 1％)* (100％-P 2％)*……*(100％-P n％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P 1％、P 2％……P n％依次分别为第1级、第2级、……第n级电场装置的除尘效率，n为大于1的整数。
7.本发明提供的示例7：包括上述示例1至6中的任一项，其中，每个所述电场装置还包括电场装置入口、电场装置出口；所述电场阳极包括第一阳极部和第二阳极部，所述第一阳极部靠近所述电场装置入口，第二阳极部靠近所述电场装置出口，所述第一阳极部和所述第二阳极部之间设置有至少一个阴极支撑板。
8.本发明提供的示例8：包括上述示例7，其中，所述电场装置还包括绝缘机构，用于实现所述阴极支撑板和所述电场阳极之间的绝缘。
9.本发明提供的示例9：包括上述示例8，其中，所述电场阳极和所述电场阴极之间形成电场流道，所述绝缘机构设置在所述电场流道外。
10.本发明提供的示例10：包括上述示例8或9，其中，所述绝缘机构包括绝缘部和隔热部；所述绝缘部的材料采用陶瓷材料或玻璃材料。
11.本发明提供的示例11：包括上述示例10，其中，所述绝缘部为伞状串陶瓷柱、伞状串玻璃柱、柱状串陶瓷柱或柱状玻璃柱，伞内外或柱内外挂釉。
12.本发明提供的示例12：包括上述示例11，其中，所述伞状串陶瓷柱或伞状串玻璃柱的外缘与所述电场阳极的距离是电场距离的1.4倍以上，伞状串陶瓷柱或伞状串玻璃柱的伞突边间距总和是伞状串陶瓷柱或伞状串玻璃柱的绝缘间距1.4倍以上，伞状串陶瓷柱或伞状串玻璃柱的伞边内深总长是伞状串陶瓷柱或伞状串玻璃柱的绝缘距离1.4倍以上。
13.本发明提供的示例13：包括上述示例7至12中的任一项，其中，所述第一阳极部的长度是所述电场阳极长度的1/10至1/4、1/4至1/3、1/3至1/2、1/2至2/3、2/3至3/4，或3/4至9/10。
14.本发明提供的示例14：包括上述示例7至13中的任一项，其中，所述第一阳极部的长度是足够的长，以清除部分灰尘，减少积累在所述绝缘机构和所述阴极支撑板上的灰尘，减少灰尘造成的电击穿。
15.本发明提供的示例15：包括上述示例7至14中的任一项，其中，所述第二阳极部包括积尘段和预留积尘段。
16.本发明提供的示例16：包括上述示例2至15中的任一项，其中，所述电场阴极包括至少一根电极棒。
17.本发明提供的示例17：包括上述示例16，其中，所述电极棒的直径不大于3mm。
18.本发明提供的示例18：包括上述示例16或17，其中，所述电极棒的形状呈针状、多 角状、毛刺状、螺纹杆状或柱状。
19.本发明提供的示例19：包括上述示例2至18中的任一项，其中，所述电场阳极由中空的管束组成。
20.本发明提供的示例20：包括上述示例19，其中，所述电场阳极管束的中空的截面采用圆形或多边形。
21.本发明提供的示例21：包括上述示例20，其中，所述多边形为六边形。
22.本发明提供的示例22：包括上述示例18至21中的任一项，其中，所述电场阳极的管束呈蜂窝状。
23.本发明提供的示例23：包括上述示例2至22中的任一项，其中，所述电场阴极穿射于所述电场阳极内。
24.本发明提供的示例24：包括上述示例2至23中的任一项，其中，所述电场装置还包括辅助电场单元，用于产生与所述电离电场不平行的辅助电场。
25.本发明提供的示例25：包括上述示例2至23中的任一项，其中，所述电场装置还包括辅助电场单元，所述电离电场包括流道，所述辅助电场单元用于产生与所述流道不垂直的辅助电场。
26.本发明提供的示例26：包括上述示例24或25，其中，所述辅助电场单元包括第一电极，所述辅助电场单元的第一电极设置在或靠近所述电离电场的进口。
27.本发明提供的示例27：包括上述示例26，其中，所述第一电极为阴极。
28.本发明提供的示例28：包括上述示例26或27，其中，所述辅助电场单元的第一电极是所述电场阴极的延伸。
29.本发明提供的示例29：包括上述示例28，其中，所述辅助电场单元的第一电极与所述电场阳极具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。
30.本发明提供的示例30：包括上述示例24至29中的任一项，其中，所述辅助电场单元包括第二电极，所述辅助电场单元的第二电极设置在或靠近所述电离电场的出口。
31.本发明提供的示例31：包括上述示例30，其中，所述第二电极为阳极。
32.本发明提供的示例32：包括上述示例30或31，其中，所述辅助电场单元的第二电极是所述电场阳极的延伸。
33.本发明提供的示例33：包括上述示例32，其中，所述辅助电场单元的第二电极与所述电场阴极具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。
34.本发明提供的示例34：包括上述示例24至27、30和31中的任一项，其中，所述辅助电场的电极与所述电离电场的电极独立设置。
35.本发明提供的示例35：包括上述示例2至34中的任一项，其中，所述电场阳极的积尘 面积与所述电场阴极的放电面积的比为1.667：1-1680：1。
36.本发明提供的示例36：包括上述示例2至34中的任一项，其中，所述电场阳极的积尘面积与所述电场阴极的放电面积的比为6.67：1-56.67：1。
37.本发明提供的示例37：包括上述示例2至36中的任一项，其中，所述电场阴极直径为1-3毫米，所述电场阳极与所述电场阴极的极间距为2.5-139.9毫米；所述电场阳极的积尘面积与所述电场阴极的放电面积的比为1.667：1-1680：1。
38.本发明提供的示例38：包括上述示例2至36中的任一项，其中，所述电场阳极和所述电场阴极的极间距小于150mm。
39.本发明提供的示例39：包括上述示例2至36中的任一项，其中，所述电场阳极与所述电场阴极的极间距为2.5-139.9mm。
40.本发明提供的示例40：包括上述示例2至36中的任一项，其中，所述电场阳极与所述电场阴极的极间距为5-100mm。
41.本发明提供的示例41：包括上述示例2至40中的任一项，其中，所述电场阳极长度为10-180mm。
42.本发明提供的示例42：包括上述示例2至40中的任一项，其中，所述电场阳极长度为60-180mm。
43.本发明提供的示例43：包括上述示例2至42中的任一项，其中，所述电场阴极长度为30-180mm。
44.本发明提供的示例44：包括上述示例2至42中的任一项，其中，所述电场阴极长度为54-176mm。
45.本发明提供的示例45：包括上述示例24至44中的任一项，其中，当运行时，所述电离电场的耦合次数≤3。
46.本发明提供的示例46：包括上述示例2至44中的任一项，其中，所述电场阳极的积尘面积与所述电场阴极的放电面积的比、所述电场阳极与所述电场阴极之间的极间距、所述电场阳极长度以及所述电场阴极长度使所述电离电场的耦合次数≤3。
47.本发明提供的示例47：包括上述示例2至46中的任一项，其中，所述电离电场电压的取值范围为1kv-50kv。
48.本发明提供的示例48：包括上述示例2至47中的任一项，其中，所述电场装置还包括若干连接壳体，串联电场级通过所述连接壳体连接。
49.本发明提供的示例49：包括上述示例48，其中，相邻的电场级的距离是所述极间距的1.4倍以上。
50.本发明提供的示例50：包括上述示例2至49中的任一项，其中，所述电场装置还包括 前置电极，所述前置电极在所述电场装置入口与所述电场阳极和所述电场阴极形成的电离电场之间。
51.本发明提供的示例51：包括上述示例50，其中，所述前置电极呈面状、网状、孔板状、或板状。
52.本发明提供的示例52：包括上述示例50或51，其中，所述前置电极上设有至少一个通孔。
53.本发明提供的示例53：包括上述示例52，其中，所述通孔呈多角形、圆形、椭圆形、正方形、长方形、梯形、或菱形。
54.本发明提供的示例54：包括上述示例52或53，其中，所述通孔的孔径为0.1-3毫米。
55.本发明提供的示例55：包括上述示例50至54中的任一项，其中，所述前置电极为固体、液体、气体分子团、或等离子体中的一种或多种形态的组合。
56.本发明提供的示例56：包括上述示例50至55中的任一项，其中，所述前置电极为导电混合态物质、生物体自然混合导电物质、或物体人工加工形成导电物质。
57.本发明提供的示例57：包括上述示例50至56中的任一项，其中，所述前置电极为304钢或石墨。
58.本发明提供的示例58：包括上述示例50至56中的任一项，其中，所述前置电极为含离子导电液体。
59.本发明提供的示例59：包括上述示例50至58中的任一项，其中，在工作时，在带颗粒物的空气进入所述电场阴极、电场阳极形成的电离电场之前，且带颗粒物的空气通过所述前置电极时，所述前置电极使空气中的颗粒物带电。
60.本发明提供的示例60：包括上述示例59，其中，当带颗粒物的空气进入所述电离电场时，所述电场阳极给带电的颗粒物施加吸引力，使带电的颗粒物向所述电场阳极移动，直至带电颗粒物附着在所述电场阳极上。
61.本发明提供的示例61：包括上述示例59或60，其中，所述前置电极将电子导入所述气体中的颗粒物，电子在位于所述前置电极和所述电场阳极之间进行传递，使更多所述气体中的颗粒物带电。
62.本发明提供的示例62：包括上述示例59至61中的任一项，其中，所述前置电极和所述电场阳极之间通过所述气体中的颗粒物传导电子、并形成电流。
63.本发明提供的示例63：包括上述示例59至62中的任一项，其中，所述前置电极通过与所述气体中的颗粒物接触的方式使所述气体中的颗粒物带电。
64.本发明提供的示例64：包括上述示例59至63中的任一项，其中，所述前置电极上设有至少一个通孔。
65.本发明提供的示例65：包括上述示例64，其中，带颗粒物的空气通过所述前置电极上的通孔时，使空气中的颗粒物带电。
66.本发明提供的示例66：包括上述示例50至65中的任一项，其中，所述前置电极垂直于所述电场阳极。
67.本发明提供的示例67：包括上述示例50至66中的任一项，其中，所述前置电极与所述电场阳极相平行。
68.本发明提供的示例68：包括上述示例50至67中的任一项，其中，所述前置电极采用金属丝网。
69.本发明提供的示例69：包括上述示例50至68中的任一项，其中，所述前置电极与所述电场阳极之间的电压不同于所述电场阴极与所述电场阳极之间的电压。
70.本发明提供的示例70：包括上述示例50至69中的任一项，其中，所述前置电极与所述电场阳极之间的电压小于起始起晕电压。
71.本发明提供的示例71：包括上述示例50至70中的任一项，其中，所述前置电极与所述电场阳极之间的电压为0.1-2kv/mm。
72.本发明提供的示例72：包括上述示例50至71中的任一项，其中，所述电场装置包括流道，所述前置电极位于所述流道中；所述前置电极的截面面积与流道的截面面积比为99％-10％、或90-10％、或80-20％、或70-30％、或60-40％、或50％。
73.本发明提供的示例73：一种半导体制造系统，包括上述示例1-72中的任一项所述的用于半导体制造的洁净室系统，还包括：
薄膜制备装置，该薄膜制备装置设于所述洁净室内。
薄膜刻蚀装置，该薄膜刻蚀装置设于所述洁净室内。
离子掺杂装置，该离子掺杂装置设于所述洁净室内。
74.本发明提供的示例74：一种用于半导体制造的洁净室系统的多级电场除尘方法，包括如下步骤：
使空气通过多级电场除尘系统串联的每个电场装置；
给每个电场装置施加电压，所述电压足以确保电场除尘系统总除尘效率(100％-(100％-P 1％)*(100％-P 2％)*……*(100％-P n％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P 1％、P 2％……P n％依次分别为第1级、第2级、……第n级电场装置的除尘效率，n为大于1的整数；
将除尘后的气体输入洁净室。
75.本发明提供的示例75：包括上述示例74，其中，施加给每个所述电源装置的电压相同。
76.本发明提供的示例76：包括上述示例74，其中，施加给每个所述电源装置的电压不完 全相同。
77.本发明提供的示例77：包括上述示例74或76，施加给每个所述电源装置的电压完全不相同。
78.本发明提供的示例78：包括上述示例74-77中的任一项，其中，所述使空气通过多级电场除尘系统串联的每个电场装置包括：空气通过每个电场装置中进行电场除尘，所述电场除尘方法，包括如下步骤：
使空气通过电场阳极和电场阴极产生的电离电场。
79.本发明提供的示例79：包括示例78，其中，所述电场除尘方法还包括一种提供辅助电场的方法，包括以下步骤：
使空气通过一个流道；
在流道中产生辅助电场，所述辅助电场不与所述流道垂直。
80.本发明提供的示例80：包括示例79，其中，所述辅助电场包括第一电极，所述第一电极设置在或靠近所述电离电场的进口。
81.本发明提供的示例81：包括示例80，其中，所述第一电极为阴极。
82.本发明提供的示例82：包括示例80或81任一项，其中，所述第一电极是所述电场阴极的延伸。
83.本发明提供的示例83：包括示例82，其中，所述第一电极与所述电场阳极具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。
84.本发明提供的示例84：包括示例79至83任一项，其中，所述辅助电场包括第二电极，所述第二电极设置在或靠近所述电离电场的出口。
85.本发明提供的示例85：包括示例84，其中，所述第二电极为阳极。
86.本发明提供的示例86：包括示例84或85，其中，所述第二电极是所述电场阳极的延伸。
87.本发明提供的示例87：包括示例86，其中，所述第二电极与所述电场阴极具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。
88.本发明提供的示例88：包括示例79至81任一项，其中，所述第一电极与所述电场阳极和电场阴极独立设置。
89.本发明提供的示例89：包括示例84或85，其中，所述第二电极与所述电场阳极和电场阴极独立设置。
90.本发明提供的示例90：包括示例78至89任一项，其中，所述电场除尘方法还包括一种减少除尘电场耦合的方法，包括以下步骤：
选择电场阳极参数或/和电场阴极参数以减少电场耦合次数。
91.本发明提供的示例91：包括示例90，其中，包括选择所述电场阳极的集尘面积与电场 阴极的放电面积的比。
92.本发明提供的示例92：包括示例91，其中，包括选择所述电场阳极的积尘面积与所述电场阴极的放电面积的比为1.667：1-1680：1。
93.本发明提供的示例93：包括示例91，其中，包括选择所述电场阳极的积尘面积与所述电场阴极的放电面积的比为6.67：1-56.67：1。
94.本发明提供的示例94：包括示例90至93任一项，其中，包括选择所述电场阴极直径为1-3毫米，所述电场阳极与所述电场阴极的极间距为2.5-139.9毫米；所述电场阳极的积尘面积与所述电场阴极的放电面积的比为1.667：1-1680：1。
95.本发明提供的示例95：包括示例90至94任一项，其中，包括选择所述电场阳极和所述电场阴极的极间距小于150mm。
96.本发明提供的示例96：包括示例90至94任一项，其中，包括选择所述电场阳极与所述电场阴极的极间距为2.5-139.9mm。
97.本发明提供的示例97：包括示例90至94任一项，其中，包括选择所述电场阳极与所述电场阴极的极间距为5-100mm。
98.本发明提供的示例98：包括示例90至97任一项，其中，包括选择所述电场阳极长度为10-180mm。
99.本发明提供的示例99：包括示例90至97任一项，其中，包括选择所述电场阳极长度为60-180mm。
100.本发明提供的示例100：包括示例90至99任一项，其中，包括选择所述电场阴极长度为30-180mm。
101.本发明提供的示例101：包括示例90至99任一项，其中，包括选择所述电场阴极长度为54-176mm。
102.本发明提供的示例102：包括示例90至101任一项，其中，包括选择所述电场阴极包括至少一根电极棒。
103.本发明提供的示例103：包括示例102，其中，包括选择所述电极棒的直径不大于3mm。
104.本发明提供的示例104：包括示例102或103，其中，包括选择所述电极棒的形状呈针状、多角状、毛刺状、螺纹杆状或柱状。
105.本发明提供的示例105：包括示例90至104任一项，其中，包括选择所述电场阳极由中空的管束组成。
106.本发明提供的示例106：包括示例105，其中，包括选择所述阳极管束的中空的截面采用圆形或多边形。
107.本发明提供的示例107：包括示例106，其中，包括选择所述多边形为六边形。
108.本发明提供的示例108：包括示例105至107任一项，其中，包括选择所述电场阳极的管束呈蜂窝状。
109.本发明提供的示例109：包括示例90至108任一项，其中，包括选择所述电场阴极穿射于所述电场阳极内。
110.本发明提供的示例110：包括示例90至109任一项，其中，包括选择的所述电场阳极或/和电场阴极尺寸使电场耦合次数≤3。
111.本发明提供的示例111：一种用于设计半导体制造洁净室多级电场除尘系统方法，包括如下步骤：
选择多级电场除尘系统中电场装置个数n以及各电场装置电源的电压使多级电场除尘系统总除尘效率(100％-(100％-P 1％)*(100％-P 2％)*……*(100％-P n％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P 1％、P 2％……P n％依次分别为第1级、第2级、……第n级电场装置的除尘效率，n为大于1的整数。
112.本发明提供的示例112：包括上述示例111，其中，所述选择多级电场除尘系统中各电场装置电源的电压包括：选择多级电场除尘系统中各电场装置电源的电压相同。
113.本发明提供的示例113：包括上述示例111，其中，所述选择多级电场除尘系统中各电场装置电源的电压包括：选择多级电场除尘系统中各电场装置电源的电压不完全相同。
114.本发明提供的示例114：包括上述示例111或113，其中，所述选择多级电场除尘系统中各电场装置电源的电压包括：选择多级电场除尘系统中各电场装置电源的电压完全不相同。
115.本发明提供的示例115：一种半导体制造方法，包括如下步骤：
利用示例74-110任一项所述的多级电场除尘方法去除气体中的颗粒物；除尘后的气体输入洁净室；
在洁净室内，在衬底上形成薄膜；
在洁净室内，在所述薄膜上形成沟道，所述沟道暴露出所述衬底表面；
在洁净室内，对所述沟道暴露出的衬底进行离子渗入，形成具有电子特性的特定结构。
本发明提供的示例6、示例74、示例111中，所述臭氧输出量小于或等于一个预定值，所述预定值是指30ppm(parts-per-million)、或10ppm、或5ppm、或3ppm、或1ppm、或0.1ppm。
本发明具有如下有益效果：
现有半导体制造厂房为三层建筑，洁净室的过滤器净化系统需要单独一层建筑，建筑成本约是300美元/m 2，因此，现有净化系统占用空间大且建设成本也高，本发明的一些实施例可减少10倍以上体积和面积，且节约了建筑成本，使本发明体积小、造价低。
同时，现有技术中超高效过滤器的阻力往往在1500帕以上，每1000千瓦的阻力需要电机耗电1000千瓦，故风机能耗高，本发明的一些实施例的阻力只有100帕左右，电耗可节省15倍左右，耗电量小。
而且，现有电场除尘技术是以降低除尘效率为代价来控制臭氧产生量，确保臭氧不超标，本发明在确保总除尘效率的同时，将臭氧产生量控制在预定值以下。本发明的一些实施例可实现粒径23nm颗粒物的脱除效率达到99.99％以上，同时可将臭氧输出量控制在预定值以下，满足半导体制造厂房对进入洁净室气体的要求。
附图说明
图1为本发明实施例1中电场装置的结构示意图。
图2为本发明实施例2-11中电场发生单元结构示意图。
图3为本发明实施例2和实施例5中图2电场发生单元的A-A视图。
图4为本发明实施例2和实施例5中标注长度和角度的图2电场发生单元的A-A视图。
图5为本发明实施例2和实施例5中两个电场级的电场装置结构示意图。
图6为本发明实施例12中电场装置的结构示意图。
图7为本发明实施例14中电场装置的结构示意图。
图8为本发明实施例15中电场装置的结构示意图。
图9为本发明实施例16中电场装置的结构示意图。
图10为本发明实施例18中洁净室系统的结构示意图。
图11为本发明实施例19中洁净室系统的结构示意图。
具体实施方式
以下由特定的具体实施例说明本发明的实施方式，熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本发明的其他优点及功效。
须知，本说明书所附图式所绘示的结构、比例、大小等，均仅用以配合说明书所揭示的内容，以供熟悉此技术的人士了解与阅读，并非用以限定本发明可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时，本说明书中所引用的如“上”、“下”、“左”、“右”、“中间”及“一”等的用语，亦仅为便于叙述的明了，而非用以限定本发明可实施的范围，其相对关系的改变或调整，在无实质变更技术内容下，当亦视为本发明可实施的范畴。术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。
如上所述，和现有技术相比，本发明的一些实施例可减少10倍以上体积和面积，且节约了建筑成本，使本发明体积小、造价低。现有技术中超高效过滤器的阻力往往在1500帕以上，每1000千瓦的阻力需要电机耗电1000千瓦，故风机能耗高，本发明的一些实施例的阻力只有100帕左右，电耗可节省15倍左右，耗电量小。
而且，现有电场除尘技术是以降低除尘效率为代价来控制臭氧产生量，确保臭氧不超标，本发明的一些实施例在确保总除尘效率的同时，将臭氧产生量控制在预定值以下。
本发明一实施例提供一种用于半导体制造的洁净室系统，包括洁净室、多级电场除尘系统；所述洁净室包括气体入口；所述多级电场除尘系统包括除尘系统入口、除尘系统出口、至少两个串联的电场装置；所述洁净室的气体入口与所述多级电场除尘系统的除尘系统出口连通。
于本发明一实施例中，每个所述电场装置包括电场阴极和电场阳极，所述电场阴极和所述电场阳极用于产生电离电场。于本发明一实施例中，所述多级电场除尘系统包括电源装置，每个所述电场装置的电场阳极和电场阴极分别与电源装置的两个电极电性连接。
于本发明一些实施例中，所述电源装置可为不同电场装置提供相同电压。例如，所述多级电场除尘系统包括依次串联的第1级电场装置、第2级电场装置、第3级电场装置，所述电源装置包括第一电源，所述第1级电场装置、第2级电场装置、第3级电场装置的电场阳极和电场阴极分别与第一电源的两个电极电性连接，所述第一电源为第1级电场装置、第2级电场装置、第3级电场装置同时提供相同的电压。
于本发明一些实施例中，所述电源装置可为不同电场装置提供不同电压。例如，所述多级电场除尘系统包括依次串联的第1级电场装置、第2级电场装置、第3级电场装置，第1级电场装置、第2级电场装置、第3级电场装置所需的电压均不相同。所述电源装置可包括第一电源、第二电源、第三电源，所述第一电源的两个电极与第1级电场装置电场阳极和电场阴极分别电性连接，所述第二电源的两个电极与第2级电场装置电场阳极和电场阴极分别电性连接，所述第三电源的两个电极与第3级电场装置电场阳极和电场阴极分别电性连接，第一电源、第二电源、第三电源提供不同的电压。
于本发明一些实施例中，所述电源装置可为各级电场装置提供部分相同的电压。例如，所述多级电场除尘系统包括依次串联的第1级电场装置、第2级电场装置、第3级电场装置，第1级电场装置和第2级电场装置所需电压相同，第3级电场装置所需的电压与第1级电场装置、第2级电场装置的电压不同，所述电源装置可包括第一电源、第二电源，所述第1级电场装置的电场阳极和电场阴极与第一电源的两个电极电性连接，第2级电场装置的电场阳极和电场阴极与第一电源的两个电极电性连接，第一电源为第1级电场装置和第2级电场装置同时供电；所述第3级电场装置的电场阳极和电场阴极与第二电源的两个 电极电性连接，第二电源为第3级电场装置供电，第一电源、第二电源提供不同的电压。
于本发明一些实施例中，所述电源装置给每个电场装置提供的电压值足以确保多级电场除尘系统总除尘效率(100％-(100％-P 1％)*(100％-P 2％)*……*(100％-P n％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P 1％、P 2％……P n％依次分别为所述多级电场除尘系统中第1级电场装置、第2级电场装置、……第n级电场装置的除尘效率，n为大于1的整数。
于本发明一些实施例中，所述电源装置为所述多级电场除尘系统中每个所述电场装置提供同一电压，所述电压值足以确保电场除尘系统总除尘效率(100％-(100％-P 1％)*(100％-P 2％)*……*(100％-P n％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P 1％、P 2％……P n％依次分别为第1级、第2级、……第n级电场装置的除尘效率，n为大于1的整数。
于本发明一实施例中，所述电源装置为每个所述电场装置提供不同电压，每个所述电场装置的电压使电离电场的臭氧输出量小于一个预定值，各级电场装置的除尘效率分别为P 1％、P 2％……P n％，n为大于1的整数，同时确保电场除尘系统总除尘效率(100％-(100％-P 1％)*(100％-P 2％)*……*(100％-P n％))大于一个预定值。所述电源装置为每个所述电场装置提供不同电压包括为每个所述电场装置提供不完全相同的电压及提供完全不相同的电压。
于本发明一实施例中，所述多级电场除尘系统包括n级电场装置，n为大于1的整数，各级电场装置中除尘效率分别为P 1％、P 2％、P 3％、……P n％，所述多级电场除尘系统的总除尘效率为(100％-(100％-P 1％)*(100％-P 2％)*(100％-P 3％)*……*(100％-P n％))。
于本发明一些实施例中，所述多级电场除尘系统中各电场装置的结构可完全相同、也可以不完全相同或也可以完全不同。
于本发明一些实施例中，提供一种用于半导体制造的洁净室系统的多级电场除尘方法，包括如下步骤：
使气体通过多级电场除尘系统串联的每个电场装置；
给每个电场装置施加电压，所述电压足以确保电场除尘系统总除尘效率(100％-(100％-P 1％)*(100％-P 2％)*……*(100％-P n％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P 1％、P 2％……P n％依次分别为第1级、第二级、……第n级电场装置的除尘效率，n为大于1的整数；将除尘后的气体输入洁净室。
于本发明一实施例中，所述使空气通过多级电场除尘系统串联的每个电场装置包括：空气通过每个电场装置中进行电场除尘，所述电场除尘方法，包括如下步骤：
使空气通过电场阳极和电场阴极产生的电离电场。
于本发明一实施例中，本发明提供一种用于半导体制造的洁净室系统的多级电场除尘方法，包括以下步骤：使空气通过至少两个串联的电离电场。
于本发明一些实施例中，施加给每个所述电源装置的电压可以相同。于本发明一些实施例中，施加给每个所述电源装置的电压不完全相同。于本发明一些实施例中，施加给每个所述电源装置的电压，可以完全不相同。
于本发明一些实施例中，提供一种用于设计半导体制造洁净室多级电场除尘系统的方法，包括如下步骤：
选择多级电场除尘系统中电场装置个数n以及各电场装置电源的电压使电场除尘系统总除尘效率(100％-(100％-P 1％)*(100％-P 2％)*……*(100％-P n％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P 1％、P 2％……P n％依次分别为第1级、第2级、……第n级电场装置的除尘效率，n为大于1的整数。
于本发明一些实施例中，所述选择多级电场除尘系统中各电场装置电源的电压包括：选择多级电场除尘系统中各电场装置电源的电压相同。
于本发明一些实施例中，所述选择多级电场除尘系统中各电场装置电源的电压包括：选择多级电场除尘系统中各电场装置电源的电压不完全相同。
于本发明一些实施例中，所述选择多级电场除尘系统中各电场装置电源的电压包括：选择多级电场除尘系统中各电场装置电源的电压完全不相同。
本发明一实施例涉及多级电场除尘系统设计方法。在此方法中，当多级电场除尘系统的除尘效率小于预定值和/或臭氧输出量大于预定值时，减小至少多级电场除尘系统的一个电场装置电压，以减少臭氧输出量，和/或增加电场装置个数，以增加多级电场除尘系统的除尘效率，直至除尘效率和臭氧输出量都达到预定值。这个方法能够实现的原因是，在一定电压范围内，减少电压会减少臭氧输出量，但也会减少除尘效率，不过臭氧输出量的减少程度要比除尘效率的减少程度要大。
于本发明一些实施例中，提供一种半导体制造系统，包括：本发明所述的用于半导体制造的洁净室系统，所述洁净室系统包括洁净室、多级电场除尘系统；还包括：
薄膜制备装置，该薄膜制备装置设于洁净室内，用于在衬底上形成薄膜，可以选用现有技术中任何可适用的相关装置。
薄膜刻蚀装置，该薄膜刻蚀装置设于洁净室内，用于在薄膜上刻蚀形成沟道，可以选用现有技术中任何可适用的相关装置。
离子掺杂装置，该离子掺杂装置设于洁净室内，用于在沟道暴露出的衬底上形成具有电子特性的特定结构，可以选用现有技术中任何可适用的相关装置。
本发明某些实施例还提供一种半导体制造方法，包括以下步骤：
S1：空气除尘：利用多级电场除尘方法去除气体中的颗粒物；经多级电场除尘后的净化气体进入洁净室；
S2，在衬底上形成薄膜；
S3，在所述薄膜上形成沟道，所述沟道暴露出所述衬底表面；
S4，对所述沟道暴露出的衬底进行离子渗入，形成具有电子特性的特定结构。
于本发明一实施例中，步骤S3中，所述沟槽形成包括如下步骤：
在所述薄膜表面涂覆光刻胶；
通过掩模板对所述光刻胶进行曝光；
对所述光刻胶进行显影并清洗去除部分光刻胶，暴露出部分薄膜表面；
对暴露出的薄膜进行刻蚀，暴露出部分衬底表面，形成沟道。
于本发明一实施例中，所述光刻胶为正胶或反胶。
于本发明一实施例中，步骤S2中，所述衬底的材质为硅、锗、锗硅、碳化硅、砷化镓、砷化铟或磷化铟，也可以是其他任何适用的物质。
于本发明一实施例中，步骤S2中，所述薄膜采用CVD(Chemical Vapor Deposition，化学气相沉积)或PVD(Physical Vapor Deposition，物理气相沉积)工艺形成，也可以是其他常规可适用的成膜方法。
于本发明一实施例中，步骤S2中，所述薄膜的主要组分为氮化硅、氧化硅、碳化硅、多晶硅或两者以上任意组合，也可以是其他任何适用的物质。
于本发明某些实施例中，步骤S3中，形成沟道的方法可以为任何合适的方法，例如，在薄膜表面涂覆光刻胶，将配置有掩模图形的掩模板放置在光刻胶上方，用光源照射掩模板，通过掩模板对光刻胶进行曝光，并清洗去除部分光刻胶，暴露出部分薄膜表面。其中，光源可以为任何合适的光源，例如采用紫外线、深紫外线或极紫外线。光刻胶可以选用正胶或负胶。当选用正胶时，光刻胶受光源照射的部分容易被显影液洗掉，而没有受光源照射的部分不容易被显影液洗掉而留在薄膜上。反之，当选用负胶时，光刻胶受光源照射的部分不容易被显影液洗掉而留在薄膜上，而没有受光源照射的部分容易被显影液洗掉。不论选用正胶或负胶，都会有一部分光刻胶被洗掉，而另一部分光刻胶留在薄膜上，从而使得掩模板上的掩模图形在光刻胶上显影出来。根据光刻胶上显影出来的掩模图形，将光刻胶被洗掉后露出的薄膜部分刻蚀掉，形成沟道，并露出最底层的衬底。其中，刻蚀方法可以是任何合适的方法，例如采用干法蚀刻或湿法蚀刻。当选用干法刻蚀时，可以利用溅射刻蚀等方法进行薄膜刻蚀，具有较好的选择性。当选用湿法刻蚀时，可以利用氟化氢溶液等化学腐蚀液，将与化学腐蚀液接触的薄膜部分浸蚀溶掉，具有刻蚀速率快、厚度深、灵敏度高的特点。
于本发明一实施例中，步骤S4中，所述离子渗入可以为扩散或离子注入，也可以为其他任何适用的方法。
于本发明一实施例中，步骤S4中，所述电子特性为PN结。
于本发明一实施例中，步骤S4中，在刻蚀后暴露出的衬底上使离子渗入衬底，形成如PN结等具有电子特性的特定结构。
于本发明一实施例中多级电场除尘系统的每个电场装置可包括电场装置入口、电场装置出口、电场阴极和电场阳极，所述电场阴极和所述电场阳极用于产生电离电场。气体进入电离电场，气体中的氧气将被电离，并形成大量带有电荷的氧离子，氧离子与气体中粉尘等颗粒物结合，使得颗粒物荷电，电场阳极给带负电荷的颗粒物施加吸附力，使得颗粒物被吸附在电场阳极上，以清除掉气体中的颗粒物。
于本发明一实施例中，所述电场阴极包括若干根阴极丝。阴极丝的直径可为0.1mm-20mm，该尺寸参数根据应用场合及积尘要求做调整。于本发明一实施例中阴极丝的直径不大于3mm。于本发明一实施例中阴极丝使用容易放电的金属丝或合金丝，耐温且能支撑自身重量，电化学稳定。于本发明一实施例中阴极丝的材质选用钛。阴极丝的具体形状根据电场阳极的形状调整，例如，若电场阳极的积尘面是平面，则阴极丝的截面呈圆形；若电场阳极的积尘面是圆弧面，阴极丝需要设计成多面形。阴极丝的长度根据电场阳极进行调整。
于本发明一实施例中，所述电场阴极包括若干阴极棒。于本发明一实施例中，所述阴极棒的直径不大于3mm。于本发明一实施例中阴极棒使用容易放电的金属棒或合金棒。阴极棒的形状可以为针状、多角状、毛刺状、螺纹杆状或柱状等。阴极棒的形状可以根据电场阳极的形状进行调整，例如，若电场阳极的积尘面是平面，则阴极棒的截面需要设计成圆形；若电场阳极的积尘面是圆弧面，则阴极棒需要设计成多面形。
于本发明一实施例中，电场阴极穿设于电场阳极内。
于本发明一实施例中，电场阳极包括一个或多个并行设置的中空阳极管。当中空阳极管有多个时，全部中空阳极管构成蜂窝状的电场阳极。于本发明一实施例中，中空阳极管的截面可呈圆形或多边形。若中空阳极管的截面呈圆形，电场阳极和电场阴极之间能形成均匀电场，中空阳极管的内壁不容易积尘。若中空阳极管的截面为三边形时，中空阳极管的内壁上可以形成3个积尘面，3个远角容尘角，此种结构的中空阳极管的容尘率最高。若中空阳极管的截面为四边形，可以获得4个积尘面，4个容尘角，但拼组结构不稳定。若中空阳极管的截面为六边形，可以形成6个积尘面，6个容尘角，积尘面和容尘率达到平衡。若中空阳极管的截面呈更多边形时，可以获得更多的积尘边，但损失容尘率。于本发明一实施例中，中空阳极管的管内切圆直径取值范围为5mm-400mm。
于本发明一实施例中，电场阴极安装在阴极支撑板上，阴极支撑板与电场阳极通过绝缘机构相连接。所述绝缘机构用于实现所述阴极支撑板和所述电场阳极之间的绝缘。于本发明一实施例中，电场阳极包括第一阳极部和第二阳极部，即所述第一阳极部靠近电场装置入口，第二阳极部靠近电场装置出口。阴极支撑板和绝缘机构在第一阳极部和第二阳极部之间，即绝缘机构安装在电离电场中间、或电场阴极中间，可以对电场阴极起到良好的支撑作用，并对电场阴极起到相对于电场阳极的固定作用，使电场阴极和电场阳极之间保持设定的距离。而现有技术中，阴极的支撑点在阴极的端点，难以保持阴极和阳极之间的距离。于本发明一实施例中绝缘机构设置在电场流道外、即电场流道外，以防止或减少气体中的灰尘等聚集在绝缘机构上，导致绝缘机构击穿或导电。
于本发明一实施例中，绝缘机构采用耐高压陶瓷绝缘子，对电场阴极和电场阳极之间进行绝缘。电场阳极也称作一种外壳。
于本发明一实施例中，第一阳极部在气体流动方向上位于阴极支撑板和绝缘机构之前，第一阳极部能够除去气体中的水，防止水进入绝缘机构，造成绝缘机构短路、打火。另外，第一阳级部能够除去气体中相当一部分的灰尘，当气体通过绝缘机构时，相当一部分的灰尘已被消除，减少灰尘造成绝缘机构短路的可能性。于本发明一实施例中绝缘机构包括绝缘瓷柱。第一阳极部的设计主要是为了保护绝缘瓷柱不被气体中颗粒物等污染，一旦气体污染绝缘瓷柱将会造成电场阳极和电场阴极导通，从而使电场阳极的积尘功能失效，故第一阳极部的设计，能有效减少绝缘瓷柱被污染，提高产品的使用时间。在气体流经电场流道过程中，第一阳极部和电场阴极先接触具有污染性的气体，绝缘机构后接触气体，达到先除尘后经过绝缘机构的目的，减少对绝缘机构造成的污染，延长清洁维护周期，对应电极使用后绝缘支撑。所述第一阳极部的长度是足够的长，以清除部分灰尘，减少积累在所述绝缘机构和所述阴极支撑板上的灰尘，减少灰尘造成的电击穿。于本发明一实施例中第一阳极部长度占电场阳极总长度的1/10至1/4、1/4至1/3、1/3至1/2、1/2至2/3、2/3至3/4，或3/4至9/10。
于本发明一实施例中，第二阳极部在气体流动方向上位于阴极支撑板和绝缘机构之后。第二阳极部包括积尘段和预留积尘段。其中积尘段利用静电吸附气体中的颗粒物，该积尘段是为了增加积尘面积，延长电场装置的使用时间。预留积尘段能为积尘段提供失效保护。预留积尘段是为了在满足设计除尘要求的前提下，进一步提高积尘面积，提高除尘效果。预留积尘段作为补充前段积尘使用。于本发明一实施例中，第一阳极部和第二阳极部可使用不同的电源。
于本发明一实施例中，由于电场阴极和电场阳极之间存在极高电位差，为了防止电场阴极和电场阳极导通，绝缘机构设置在电场阴极和电场阳极之间的电场流道之外。因此， 绝缘机构外悬于电场阳极的外侧。于本发明一实施例中绝缘机构可采用非导体耐温材料，比如陶瓷、玻璃等。于本发明一实施例中，完全密闭无空气的材料绝缘要求绝缘隔离厚度>0.3mm/kv；空气绝缘要求>1.4mm/kv。可根据电场阴极和电场阳极之间的极间距的1.4倍设置绝缘距离。于本发明一实施例中绝缘机构使用陶瓷，表面上釉；不能使用胶粘或有机材料填充连接，耐温大于350摄氏度。
于本发明一实施例中，绝缘机构包括绝缘部和隔热部。为了使绝缘机构具有抗污功能，绝缘部的材料采用陶瓷材料或玻璃材料。于本发明一实施例中，绝缘部可为伞状串陶瓷柱或玻璃柱，伞内外挂釉。伞状串陶瓷柱或玻璃柱的外缘与电场阳极的距离大于或等于电场距离的1.4倍、即大于或等于极间距的1.4倍。伞状串陶瓷柱或玻璃柱的伞突边间距总和大于或等于伞状串陶瓷柱的绝缘间距的1.4倍。伞状串陶瓷柱或玻璃柱的伞边内深总长大于或等于伞状串陶瓷柱的绝缘距离1.4倍。绝缘部还可为柱状串陶瓷柱或玻璃柱，柱内外挂釉。于本发明一实施例中绝缘部还可呈塔状。
于本发明一实施例中，绝缘部内设置加热棒，当绝缘部周围温度接近露点时，加热棒启动并进行加热。由于使用中绝缘部的内外存在温差，绝缘部的内外、外部容易产生凝露。绝缘部的外表面可能自发或被气体加热产生高温，需要必要的隔离防护，防烫伤。隔热部包括位于绝缘部外部的防护围挡板、脱硝净化反应腔。于本发明一实施例中绝缘部的尾部需要凝露位置同样需要隔热，防止环境以及散热高温加热凝露组件。
于本发明一实施例中电场装置的电源的引出线使用伞状串陶瓷柱或玻璃柱过墙式连接，墙内使用弹性碰头连接阴极支撑板，墙外使用密闭绝缘防护接线帽插拔连接，引出线过墙导体与墙绝缘距离大于伞状串陶瓷柱或玻璃柱的陶瓷绝缘距离。于本发明一实施例中高压部分取消引线，直接安装在端头上，确保安全，高压模块整体外绝缘使用ip68防护，使用介质换热散热。
于本发明一实施例中电场阳极和电场阴极分别与电源的两个电极电性连接。加载在电场阳极和电场阴极上的电压需选择适当的电压等级，具体选择何种电压等级取决于电场装置的体积、耐温、容尘率等。例如，电压从1kv至50kv；设计时首先考虑耐温条件，极间距与温度的参数：1MM<30度，积尘面积大于0.1平方/千立方米/小时，电场长度大于单管内切圆的5倍，控制电场气流流速小于9米/秒。于本发明一实施例中电场阳极由第一中空阳极管构成、并呈蜂窝状。第一中空阳极管端口的形状可以为圆形或多边形。于本发明一实施例中第一中空阳极管的管内切圆取值范围在5-400mm，对应电压在0.1-120kv之间，第一中空阳极管对应电流在0.1-30A之间；不同的内切圆对应不同的电晕电压，约为1KV/1MM。
于本发明一实施例中电场装置包括电场级，该电场级包括若干个电场发生单元，电场 发生单元可以有一个或多个。电场发生单元也称作集尘单元，集尘单元包括上述电场阳极和电场阴极，集尘单元有一个或多个。电场级有多个时，能有效提高电场装置的集尘效率。同一电场级中，各电场阳极为相同极性，各电场阴极为相同极性。且电场级有多个时，各电场级之间串联。于本发明一实施例中电场装置还包括若干个连接壳体，串联电场级通过连接壳体连接；相邻两级的电场级的距离是极间距的1.4倍以上。
本发明的发明人研究发现，现有电场装置去除效率差、能耗高的缺点是由电场耦合引起的。本发明通过减小电场耦合次数，可以显著减小电场除尘装置的尺寸(即体积)。比如，本发明提供的电离除尘装置的尺寸约为现有电离除尘装置尺寸的五分之一。原因是，为了获得可接受的颗粒去除率，现有电离除尘装置中将气体流速设为1m/s左右，而本发明在将气体流速提高到6m/s的情况下，仍能获得较高的颗粒去除率。当处理一给定流量的气体时，随着气体速度的提高，电场除尘装置的尺寸可以减小。
另外，本发明可以显著提高颗粒去除效率。例如，在气体流速为1m/s左右时，现有技术电场除尘装置可以去除发动机排气中大约70％的颗粒物，但是本发明可以去除大约99％的颗粒物，即使在气体流速为6m/s时。
由于发明人发现了电场耦合的作用，并且找到了减少电场耦合次数的方法，本发明获得了上述预料不到的结果。
本发明提供的减少电场耦合次数的方案如下：
于本发明一实施例中电场阴极和电场阳极之间采用非对称结构。在对称电场中极性粒子受到一个相同大小而方向相反的作用力，极性粒子在电场中往复运动；在非对称电场中，极性粒子受到两个大小不同的作用力，极性粒子向作用力大的方向移动，可以避免产生耦合。
本发明的电场装置的电场阴极和电场阳极之间形成电离电场。为了减少电离电场发生电场耦合，于本发明一实施例中，减少电场耦合的方法包括如下步骤：选择电场阳极的集尘面积与电场阴极的放电面积的比，使电场耦合次数≤3。于本发明一实施例中电场阳极的集尘面积与电场阴极的放电面积的比可以为：1.667：1-1680：1；3.334：1-113.34：1；6.67：1-56.67：1；13.34：1-28.33：1。该实施例选择相对大面积的电场阳极的集尘面积和相对极小的电场阴极的放电面积，具体选择上述面积比，可以减少电场阴极的放电面积，减小吸力，扩大电场阳极的集尘面积，扩大吸力，即电场阴极和电场阳极间产生不对称的电极吸力，使荷电后粉尘落入电场阳极的集尘表面，虽极性改变但无法再被电场阴极吸走，并减少电场耦合，实现电场耦合次数≤3。即在电场极间距小于150mm时电场耦合次数≤3，电场能耗低，能够减少电场对气溶胶、水雾、油雾、松散光滑颗粒物的耦合消耗，节省电场电能30-50％。集尘面积是指电场阳极工作面的面积，比如，若电场阳极呈中空的正六边形 管状，集尘面积即为中空的正六边形管状的内表面积，集尘面积也称作积尘面积。放电面积指电场阴极工作面的面积，比如，若电场阴极呈棒状，放电面积即为棒状的外表面积。
于本发明一实施例中电场阳极的长度可以为10-180mm、10-20mm、20-30mm、60-180mm、30-40mm、40-50mm、50-60mm、60-70mm、70-80mm、80-90mm、90-100mm、100-110mm、110-120mm、120-130mm、130-140mm、140-150mm、150-160mm、160-170mm、170-180mm、60mm、180mm、10mm或30mm。电场阳极的长度是指电场阳极工作面的一端至另一端的最小长度。电场阳极选择此种长度，可以有效减少电场耦合。
于本发明一实施例中电场阴极的长度可以为30-180mm、54-176mm、30-40mm、40-50mm、50-54mm、54-60mm、60-70mm、70-80mm、80-90mm、90-100mm、100-110mm、110-120mm、120-130mm、130-140mm、140-150mm、150-160mm、160-170mm、170-176mm、170-180mm、54mm、180mm、或30mm。电场阴极的长度是指电场阴极工作面的一端至另一端的最小长度。电场阴极选择此种长度，可以有效减少电场耦合。
于本发明一实施例中电场阳极和电场阴极之间的距离可以为5-30mm、2.5-139.9mm、9.9-139.9mm、2.5-9.9mm、9.9-20mm、20-30mm、30-40mm、40-50mm、50-60mm、60-70mm、70-80mm、80-90mm、90-100mm、100-110mm、110-120mm、120-130mm、130-139.9mm、9.9mm、139.9mm、或2.5mm。电场阳极和电场阴极之间的距离也称作极间距。极间距具体是指电场阳极、电场阴极工作面之间的最小垂直距离。此种极间距的选择可以有效减少电场耦合，并使电场装置具有耐高温特性。
于本发明一实施例中，所述电场阴极直径为1-3毫米，所述电场阳极与所述电场阴极的极间距为2.5-139.9毫米；所述电场阳极的积尘面积与所述电场阴极的放电面积的比为1.667：1-1680：1。
于一实施例中，本发明提供的用于半导体制造的洁净室系统的多级电场除尘方法还可以包括一种减少空气除尘电场耦合的方法，包括以下步骤：
使空气通过至少两个串联的电离电场；所述电离电场由电场阳极和电场阴极产生；
选择所述电场阳极或/和电场阴极。
于本发明一实施例中，选择的所述电场阳极或/和电场阴极尺寸使电场耦合次数≤3。
具体地，选择所述电场阳极的集尘面积与电场阴极的放电面积的比。优选地，选择所述电场阳极的积尘面积与所述电场阴极的放电面积的比为1.667：1-1680：1。
更为优选地，选择所述电场阳极的积尘面积与所述电场阴极的放电面积的比为6.67-56.67：1。
于本发明一实施例中，所述电场阴极直径为1-3毫米，所述电场阳极与所述电场阴极的极间距为2.5-139.9毫米；所述电场阳极的积尘面积与所述电场阴极的放电面积的比为 1.667：1-1680：1。
优选地，选择所述电场阳极和所述电场阴极的极间距小于150mm。
优选地，选择所述电场阳极与所述电场阴极的极间距为2.5-139.9mm。更为优选地，选择所述电场阳极与所述电场阴极的极间距为5.0-100mm。
优选地，选择所述电场阳极长度为10-180mm。更为优选地，选择所述电场阳极长度为60-180mm。
优选地，选择所述电场阴极长度为30-180mm。更为优选地，选择所述电场阴极长度为54-176mm。
于本发明一实施例中，所述电场装置还包括辅助电场单元，用于产生与所述电离除尘电场不平行的辅助电场。
于本发明一实施例中，所述电场装置还包括辅助电场单元，所述电离除尘电场包括流道，所述辅助电场单元用于产生与所述流道不垂直的辅助电场。
于本发明一实施例中，所述辅助电场单元包括第一电极，所述辅助电场单元的第一电极设置在或靠近所述电离除尘电场的进口。
于本发明一实施例中，所述第一电极为阴极。
于本发明一实施例中，所述辅助电场单元的第一电极是所述电场阴极的延伸。
于本发明一实施例中，所述辅助电场单元的第一电极与所述电场阳极具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。
于本发明一实施例中，所述辅助电场单元包括第二电极，所述辅助电场单元的第二电极设置在或靠近所述电离除尘电场的出口。
于本发明一实施例中，所述第二电极为阳极。
于本发明一实施例中，所述辅助电场单元的第二电极是所述电场阳极的延伸。
于本发明一实施例中，所述辅助电场单元的第二电极与所述电场阴极具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。
于本发明一实施例中，所述辅助电场的电极与所述电离除尘电场的电极独立设置。
电场阳极和电场阴极之间的电离电场也称作第一电场。于本发明一实施例中电场阳极和电场阴极之间还形成有与第一电场不平行的第二电场。于本发明另一实施例中，所述第二电场与所述电离电场的流道不垂直。第二电场也称作辅助电场，可以通过一个或两个辅助电极形成当第二电场由一个辅助电极形成时，该辅助电极可以放在电离电场的进口或出口，该辅助电极可以带负电势、或正电势。其中，当所述辅助电极为阴极时，设置在或靠近所述电离电场的进口；所述辅助电极与所述电场阳极具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。当所述辅助电极为阳极时，设置在或靠近所述电 离电场的出口；所述辅助电极与所述电场阴极具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。当第二电场由两个辅助电极形成时，其中一个辅助电极可以带负电势，另一个辅助电极可以带正电势；一个辅助电极可以放在电离电场的进口，另一个辅助电极放在电离电场的出口。另外，辅助电极可以是电场阴极或电场阳极的一部分，即辅助电极可以是由电场阴极或电场阳极的延伸段构成，此时电场阴极和电场阳极的长度不一样。辅助电极也可以是一个单独的电极，也就是说辅助电极可以不是电场阴极或电场阳极的一部分，此时，第二电场的电压和第一电场的电压不一样，可以根据工作状况单独地控制。所述辅助电极包括所述辅助电场单元中第一电极和/或第二电极。
于本发明一实施例中，本发明提供的用于半导体制造的洁净室系统的多级电场除尘方法还包括：一种提供辅助电场的方法，包括以下步骤：
使空气通过一个流道；
在流道中产生辅助电场，所述辅助电场不与所述流道垂直。
其中，所述辅助电场电离所述空气。
于本发明一实施例中，所述辅助电场由所述辅助电场单元产生。
于本发明一实施例中电场装置包括前置电极，该前置电极在电场装置入口与电场阳极和电场阴极形成的电离电场之间。当气体由电场装置入口流经前置电极时，气体中的颗粒物等将带电。
于本发明一实施例中前置电极的形状可以为面状、网状、孔板状或板状。本发明中网状为包括任何有孔结构的形状。当前置电极呈板状时，前置电极可以是无孔结构，也可以是有孔结构。当前置电极为有孔结构时，前置电极上设有一个或多个进气通孔。于本发明一实施例中进气通孔的形状可以为多角形、圆形、椭圆形、正方形、长方形、梯形、或菱形。于本发明一实施例中进气通孔的轮廓大小可以为0.1-3mm、0.1-0.2mm、0.2-0.5mm、0.5-1mm、1-1.2mm、1.2-1.5mm、1.5-2mm、2-2.5mm、2.5-2.8mm、或2.8-3mm。本发明中当带颗粒物的气体通过前置电极上的通孔时，带颗粒物的气体穿过所述前置电极，提高带颗粒物的气体与前置电极的接触面积，增加带电效率。本发明中前置电极上的通孔为任何允许物质流过前置电极的孔。
于本发明一实施例中前置电极的形态可以为固体、液体、气体分子团、等离子体、导电混合态物质、生物体自然混合导电物质、或物体人工加工形成导电物质中的一种或多种形态的组合。当前置电极为固体时，可采用固态金属，比如304钢，或其它固态的导体、比如石墨等。当前置电极为液体时，可以是含离子导电液体。
在工作时，在带颗粒物的气体进入电场阳极和电场阴极形成的电离电场之前，且带颗粒物的气体通过前置电极时，前置电极使气体中的颗粒物带电。当气体进入电离电场时， 电场阳极给带电颗粒物施加吸引力，使带电颗粒物向电场阳极移动，直至带电颗粒物附着在电场阳极上。
于本发明一实施例中前置电极将电子导入气体中的颗粒物，电子在位于前置电极和电场阳极之间进行传递，使更多颗粒物带电。前置电极和电场阳极之间通过气体中的颗粒物传导电子、并形成电流。
于本发明一实施例中前置电极通过与气体中的颗粒物接触的方式使气体中的颗粒物带电。于本发明一实施例中前置电极通过与气体中的颗粒物接触的方式将电子转移到气体中的颗粒物上，并使气体中的颗粒物带电。
于本发明一实施例中前置电极垂直于电场阳极。于本发明一实施例中前置电极与电场阳极相平行。于本发明一实施例中前置电极采用金属丝网。于本发明一实施例中前置电极与电场阳极之间的电压不同于电场阴极和电场阳极之间的电压。于本发明一实施例中前置电极与电场阳极之间的电压小于起始起晕电压。起始起晕电压为电场阴极和电场阳极之间的电压的最小值。于本发明一实施例中前置电极与电场阳极之间的电压可以为0.1-2kv/mm。
于本发明一实施例中电场装置包括流道，前置电极位于流道中。于本发明一实施例中前置电极的截面面积与流道的截面面积比为99％-10％、或90-10％、或80-20％、或70-30％、或60-40％、或50％。前置电极的截面面积是指前置电极沿截面上实体部分的面积之和。于本发明一实施例中前置电极带负电势。
下面通过具体实施例来进一步阐述本发明的电场除尘系统及方法。
实施例1
请参阅图1，显示为本实施例多级电场除尘系统中一级电场装置的结构示意图。所述电场装置包括电场装置入口1011、前置电极1013、绝缘机构1015。
所述前置电极1013设置于所述电场装置入口1011处，所述前置电极1013为一导电网板，所述导电网板用于在上电后，将电子传导给气体中导电性较强的金属粉尘、雾滴、或气溶胶等污染物，所述电场装置的阳极积尘部即电场阳极10141吸引带电的污染物，使带电的污染物向所述电场阳极移动，直至该部分污染物附着在电场阳极上，将该部分污染物收集起来。
所述电场装置包括电场阳极10141和设置于电场阳极10141内的电场阴极10142，电场阳极10141与电场阴极10142之间形成非对称静电场，其中，待含有颗粒物的气体通过所述排气口进入所述电场装置后，由于所述电场阴极10142放电，电离所述气体，以使所述颗粒物获得负电荷，向所述电场阳极10141移动，并沉积在所述电场阳极10141上。
具体地，所述电场阳极10141的内部由呈蜂窝状、且中空的阳极管束组组成，阳极管 束的端口的形状为六边形。
所述电场阴极10142包括若干根电极棒，其一一对应地穿设所述阳极管束组中的每一阳极管束，其中，所述电极棒的形状呈针状、多角状、毛刺状、螺纹杆状或柱状。所述电场阳极10141的集尘面积与电场阴极10142的放电面积的比为1680：1，所述电场阳极10141和电场阴极10142的极间距为9.9mm，电场阳极10141长度为60mm，电场阴极10142长度为54mm。
在本实施例中，所述电场阴极10142的出气端低于所述电场阳极10141的出气端，且所述电场阴极10142的进气端与所述电场阳极10141的进气端齐平，电场阳极10141的出口端与电场阴极10142的近出口端之间具有夹角α，且α＝90°，以使所述电场装置内部形成加速电场，能将更多的待处理物质收集起来。
所述绝缘机构1015包括绝缘部和隔热部。所述绝缘部的材料采用陶瓷材料或玻璃材料。所述绝缘部为伞状串陶瓷柱或玻璃柱，或柱状串陶瓷柱或玻璃柱，伞内外或柱内外挂釉。
如图1所示，于本发明一实施例中，电场阴极10142安装在阴极支撑板10143上，阴极支撑板10143与电场阳极10141通过绝缘机构1015相连接。所述绝缘机构1015用于实现所述阴极支撑板10143和所述电场阳极10141之间的绝缘。于本发明一实施例中，电场阳极10141包括第一阳极部101412和第二阳极部101411，即所述第一阳极部101412靠近电场装置入口，第二阳极部101411靠近电场装置出口。阴极支撑板和绝缘机构在第一阳极部101412和第二阳极部101411之间，即绝缘机构1015安装在电离电场中间、或电场阴极10142中间，可以对电场阴极10142起到良好的支撑作用，并对电场阴极10142起到相对于电场阳极10141的固定作用，使电场阴极10142和电场阳极10141之间保持设定的距离。
实施例2
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，本实施例的电场发生单元结构示意图参见图2，本实施例电场发生单元的A-A视图参见图3，本实施例电场发生单元标注长度和角度的电场发生单元的A-A视图参见图4。
如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之 间形成放电电场，该放电电场是一种静电场。
如图2、图3和图4所示，本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中。
减少电场耦合的方法，包括如下步骤：选择电场阳极4051的集尘面积与电场阴极4052的放电面积的比为6.67：1，电场阳极4051和电场阴极4052的极间距L3为9.9mm，电场阳极4051长度L1为60mm，电场阴极4052长度L2为54mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端之间具有夹角α，且α＝118°，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，实现电场耦合次数≤3，能够减少电场对空气中气溶胶、水雾、油雾、松散光滑颗粒物的耦合消耗，节省电场电能30-50％。
本实施例中电场装置包括由多个上述电场发生单元构成的电场级，所述电场级有多个，以利用多个集尘单元有效提高本电场装置的集尘效率。同一电场级中，各电场阳极为相同极性，各电场阴极为相同极性。
多个电场级中各电场级之间串联，串联电场级通过连接壳体连接，相邻两级的电场级的距离大于极间距的1.4倍。本实施例中两个电场级的电场装置结构示意图参见图5，如图5所示，所述电场级为两级即第一级电场4053和第二级电场4054，第一级电场4053和第二级电场4054通过连接壳体4055串联连接。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例3
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中。
减少电场耦合的方法，包括如下步骤：选择电场阳极4051的集尘面积与电场阴极4052的放电面积的比为1680：1，电场阳极4051和电场阴极4052的极间距为139.9mm，电场 阳极4051长度为180mm，电场阴极4052长度为180mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端齐平，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，实现电场耦合次数≤3，能够减少电场对空气中气溶胶、水雾、油雾、松散光滑颗粒物的耦合消耗，节省电场电能20-40％。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例4
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中。
减少电场耦合的方法，包括如下步骤：选择电场阳极4051的集尘面积与电场阴极4052的放电面积的比为1.667：1，电场阳极4051和电场阴极4052的极间距为2.4mm，电场阳极4051长度为30mm，电场阴极4052长度为30mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端齐平，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，实现电场耦合次数≤3，能够减少电场对气溶胶、水雾、油雾、松散光滑颗粒物的耦合消耗，节省电场电能10-30％。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例5
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施 例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
如图2、图3和图4所示，本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中，电场阳极4051的集尘面积与电场阴极4052的放电面积的比为6.67：1，所述电场阳极4051和电场阴极4052的极间距L3为9.9mm，电场阳极4051长度L1为60mm，电场阴极4052长度L2为54mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端之间具有夹角α，且α＝118°，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，保证本电场发生单元的集尘效率更高，典型尾气颗粒pm0.23集尘效率为99.99％以上，典型23nm颗粒去除效率为99.99％以上。
本实施例中电场装置包括由多个上述电场发生单元构成的电场级，所述电场级有多个，以利用多个集尘单元有效提高本电场装置的集尘效率。同一电场级中，各电场阳极为相同极性，各电场阴极为相同极性。
多个电场级中各电场级之间串联，串联电场级通过连接壳体连接，相邻两级的电场级的距离大于极间距的1.4倍。如图5示，所述电场级为两级即第一级电场4053和第二级电场4054，第一级电场4053和第二级电场4054通过连接壳体4055串联连接。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例6
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中，电场阳极4051的集尘面积与电场阴极4052的放电面积的比为1680：1，所述电场阳极4051和电场阴极4052的极间距为139.9mm，电场阳极4051长度为180mm，电场阴极4052长度为180mm，所述电场阳极4051包括流体通道，所述 流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端齐平，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，保证本电场装置的集尘效率更高，典型尾气颗粒pm0.23集尘效率为99.99％以上，典型23nm颗粒去除效率为99.99％以上。
本实施例中电场装置包括由多个上述电场发生单元构成的电场级，所述电场级有多个，以利用多个集尘单元有效提高本电场装置的集尘效率。同一电场级中，各电场阳极为相同极性，各电场阴极为相同极性。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例7
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中，电场阳极4051的集尘面积与电场阴极4052的放电面积的比为1.667：1，所述电场阳极4051和电场阴极4052的极间距为2.4mm。电场阳极4051长度为30mm，电场阴极4052长度为30mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端齐平，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，保证本电场装置的集尘效率更高，典型尾气颗粒pm0.23集尘效率为99.99％以上，典型23nm颗粒去除效率为99.99％以上。
本实施例中电场阳极4051及电场阴极4052构成集尘单元，且该集尘单元有多个，以利用多个集尘单元有效提高本电场装置的集尘效率。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例8
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系 统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中。
减少电场耦合的方法，包括如下步骤：选择电场阳极4051的集尘面积与电场阴极4052的放电面积的比为27.566:1，电场阳极4051和电场阴极4052的极间距为2.3mm，电场阳极4051长度为5mm，电场阴极4052长度为4mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端齐平，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，实现电场耦合次数≤3，保证本电场发生单元的除尘效率更高。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例9
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中。
减少电场耦合的方法，包括如下步骤：选择电场阳极4051的集尘面积与电场阴极4052的放电面积的比为1.108:1，电场阳极4051和电场阴极4052的极间距为2.3mm，电场阳：极051长度为60mm，电场阴极4052长度为200mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近 进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端齐平，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，实现电场耦合次数≤3，保证本电场发生单元的除尘效率更高。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例10
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极4052穿设在电场阳极4051中。
减少电场耦合的方法，包括如下步骤：选择电场阳极4051的集尘面积与电场阴极4052的放电面积的比为3065：1，电场阳极4051和电场阴极4052的极间距为249mm，电场阳极4051长度为2000mm，电场阴极4052长度为180mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端齐平，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，实现电场耦合次数≤3，保证本电场发生单元的除尘效率更高。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例11
本实施例中电场发生单元可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，如图2所示，包括用于发生电场的电场阳极4051和电场阴极4052，所述电场阳极4051和电场阴极4052分别与电源的两个电极电性连接，所述电源为直流电源，所述电场阳极4051和电场阴极4052分别与直流电源的阳极和阴极电性连接。本实施例中电场阳极4051具有正电势，电场阴极4052具有负电势。
本实施例中直流电源具体可为直流高压电源。上述电场阳极4051和电场阴极4052之间形成放电电场，该放电电场是一种静电场。
本实施例中电场阳极4051呈中空的正六边形管状，电场阴极4052呈棒状，电场阴极 4052穿设在电场阳极4051中。
减少电场耦合的方法，包括如下步骤：选择电场阳极4051的集尘面积与电场阴极4052的放电面积的比为1.338:1，电场阳极4051和电场阴极4052的极间距为5mm，电场阳极4051长度为2mm，电场阴极4052长度为10mm，所述电场阳极4051包括流体通道，所述流体通道包括进口端与出口端，所述电场阴极4052置于所述流体通道中，所述电场阴极4052沿集尘极流体通道的方向延伸，电场阳极4051的进口端与电场阴极4052的近进口端齐平，电场阳极4051的出口端与电场阴极4052的近出口端齐平，进而在电场阳极4051和电场阴极4052的作用下，能将更多的待处理物质收集起来，实现电场耦合次数≤3，保证本电场发生单元的除尘效率更高。
本实施例中上述待处理物质可以是空气中呈颗粒状的粉尘。
实施例12
本实施例中电场装置可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，本实施例中电场装置的结构示意图参见图6。如图6所示，该电场装置包括电场阴极5081和电场阳极5082分别与直流电源的阴极和阳极电性连接，辅助电极5083与直流电源的阳极电性连接。本实施例中电场阴极5081具有负电势，电场阳极5082和辅助电极5083均具有正电势。
同时，如图6所示，本实施例中辅助电极5083与电场阳极5082固接。在电场阳极5082与直流电源的阳极电性连接后，也实现了辅助电极5083与直流电源的阳极电性连接，且辅助电极5083与电场阳极5082具有相同的正电势。
如图6所示，本实施例中辅助电极5083可沿前后方向延伸，即辅助电极5083的长度方向可与电场阳极5082的长度方向相同。
如图6所示，本实施例中电场阳极5082呈管状，电场阴极5081呈棒状，电场阴极5081穿设在电场阳极5082中。同时本实施例中上述辅助电极5083也呈管状，辅助电极5083与电场阳极5082构成阳极管5084。阳极管5084的前端与电场阴极5081齐平，阳极管5084的后端向后超出了电场阴极5081的后端，该阳极管5084相比于电场阴极5081向后超出的部分为上述辅助电极5083。即本实施例中电场阳极5082和电场阴极5081的长度相同，电场阳极5082和电场阴极5081在前后方向上位置相对；辅助电极5083位于电场阳极5082和电场阴极5081的后方。这样，辅助电极5083与电场阴极5081之间形成辅助电场，该辅助电场给电场阳极5082和电场阴极5081之间带负电荷的氧离子流施加向后的力。当含有待处理物质的气体由前向后流入阳极管5084，带负电荷的氧离子在向电场阳极5082且向后移动过程中将与待处理物质相结合，由于氧离子具有向后的移动速度，氧离子在与待处理物质相结合时，两者间不会产生较强的碰撞，从而避免因较强碰撞而造成较大的能量 消耗，使得氧离子易于与待处理物质相结合，并使得气体中待处理物质的荷电效率更高，进而在电场阳极5082及阳极管5084的作用下，能将更多的待处理物质收集起来，保证本电场装置的除尘效率更高。
另外，如图6所示，本实施例中阳极管5084的后端与电场阴极5081的后端之间具有夹角α，且0°＜α≤125°、或45°≤α≤125°、或60°≤α≤100°、或α＝90°。
本实施例中电场阳极5082、辅助电极5083、及电场阴极5081构成除尘单元，且该除尘单元有多个，以利用多个除尘单元有效提高本电场装置的除尘效率。
本实施例中上述待处理物质可以是呈颗粒状的粉尘。
本实施例中直流电源具体可为直流高压电源。上述电场阴极5081和电场阳极5082之间形成放电电场，该放电电场是一种静电场。在无上述辅助电极5083的情况下，电场阴极5081和电场阳极5082之间电场中离子流沿垂直于电极方向，且在两电极间折返流动，并导致离子在电极间来回折返消耗。为此，本实施例利用辅助电极5083使电极相对位置错开，形成电场阳极5082和电场阴极5081间相对不平衡，这个不平衡会使电场中离子流发生偏转。本电场装置利用辅助电极5083形成能使离子流具有方向性的电场。本电场装置对顺离子流方向进入电场的颗粒物的收集率比对逆离子流方向进入电场的颗粒物的收集率提高近一倍，从而提高电场积尘效率，减少电场电耗。另外，现有技术中集尘电场的除尘效率较低的主要原因也是粉尘进入电场方向与电场内离子流方向相反或垂直交叉，从而导致粉尘与离子流相互冲撞剧烈并产生较大能量消耗，同时也影响荷电效率，进而使现有技术中电场集尘效率下降，且能耗增加。
实施例13
本实施例中电场装置可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，包括电场阴极和电场阳极分别与直流电源的阴极和阳极电性连接，辅助电极与直流电源的阴极电性连接。本实施例中辅助电极和电场阴极均具有负电势，电场阳极具有正电势。
本实施例中辅助电极可与电场阴极固接。这样，在实现电场阴极与直流电源的阴极电性连接后，也实现了辅助电极与直流电源的阴极电性连接。同时，本实施例中辅助电极沿前后方向延伸。
本实施例中电场阳极呈管状，电场阴极呈棒状，电场阴极穿设在电场阳极中。同时本实施例中上述辅助电极也棒状，且辅助电极和电场阴极构成阴极棒。该阴极棒的前端向前超出电场阳极的前端，该阴极棒与电场阳极相比向前超出的部分为上述辅助电极。即本实施例中电场阳极和电场阴极的长度相同，电场阳极和电场阴极在前后方向上位置相对；辅助电极位于电场阳极和电场阴极的前方。这样，辅助电极与电场阳极之间形成辅助电场， 该辅助电场给电场阳极和电场阴极之间带负电荷的氧离子流施加向后的力，使得电场阳极和电场阴极间带负电荷的氧离子流具有向后的移动速度。当含有待处理物质的气体由前向后流入管状的电场阳极，带负电荷的氧离子在向电场阳极且向后移动过程中将与待处理物质相结合，由于氧离子具有向后的移动速度，氧离子在与待处理物质相结合时，两者间不会产生较强的碰撞，从而避免因较强碰撞而造成较大的能量消耗，使得氧离子易于与待处理物质相结合，并使得气体中待处理物质的荷电效率更高，进而在电场阳极作用下，能将更多的待处理物质收集起来，保证本电场装置的除尘效率更高。
本实施例中电场阳极、辅助电极、及电场阴极构成除尘单元，且该除尘单元有多个，以利用多个除尘单元有效提高本电场装置的除尘效率。
本实施例中上述待处理物质可以是呈颗粒状的粉尘。
实施例14
本实施例中电场装置可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，本实施例中电场装置的结构示意图参见图7。如图7所示，该电场装置包括辅助电极5083，辅助电极5083沿左右方向延伸。本实施例中辅助电极5083的长度方向与电场阳极5082和电场阴极5081的长度方向不同。且辅助电极5083具体可与电场阳极5082相垂直。
本实施例中电场阴极5081和电场阳极5082分别与直流电源的阴极和阳极电性连接，辅助电极5083与直流电源的阳极电性连接。本实施例中电场阴极5081具有负电势，电场阳极5082和辅助电极5083均具有正电势。
如图7所示，本实施例中电场阴极5081和电场阳极5082在前后方向上位置相对，辅助电极5083位于电场阳极5082和电场阴极5081的后方。这样，辅助电极5083与电场阴极5081之间形成辅助电场，该辅助电场给电场阳极5082和电场阴极5081之间带负电荷的氧离子流施加向后的力，使得电场阳极5082和电场阴极5081间带负电荷的氧离子流具有向后的移动速度。当含有待处理物质的气体由前向后流入电场阳极5082和电场阴极5081之间的电场，带负电荷的氧离子在向电场阳极5082且向后移动过程中将与待处理物质相结合，由于氧离子具有向后的移动速度，氧离子在与待处理物质相结合时，两者间不会产生较强的碰撞，从而避免因较强碰撞而造成较大的能量消耗，使得氧离子易于与待处理物质相结合，并使得气体中待处理物质的荷电效率更高，进而在电场阳极5082的作用下，能将更多的待处理物质收集起来，保证本电场装置的除尘效率更高。
实施例15
本实施例中电场装置可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，本实施例中电场装置的结构示意图参见图8。如图8所示，该电场装 置包括辅助电极5083，辅助电极5083沿左右方向延伸。本实施例中辅助电极5083的长度方向与电场阳极5082和电场阴极5081的长度方向不同。且辅助电极5083具体可与电场阴极5081相垂直。
本实施例中电场阴极5081和电场阳极5082分别与直流电源的阴极和阳极电性连接，辅助电极5083与直流电源的阴极电性连接。本实施例中电场阴极5081和辅助电极5083均具有负电势，电场阳极5082具有正电势。
如图8所示，本实施例中电场阴极5081和电场阳极5082在前后方向上位置相对，辅助电极5083位于电场阳极5082和电场阴极5081的前方。这样，辅助电极5083与电场阳极5082之间形成辅助电场，该辅助电场给电场阳极5082和电场阴极5081之间带负电荷的氧离子流施加向后的力，使得电场阳极5082和电场阴极5081间带负电荷的氧离子流具有向后的移动速度。当含有待处理物质的气体由前向后流入电场阳极5082和电场阴极5081之间的电场，带负电荷的氧离子在向电场阳极5082且向后移动过程中将与待处理物质相结合，由于氧离子具有向后的移动速度，氧离子在与待处理物质相结合时，两者间不会产生较强的碰撞，从而避免因较强碰撞而造成较大的能量消耗，使得氧离子易于与待处理物质相结合，并使得气体中待处理物质的荷电效率更高，进而在电场阳极5082的作用下，能将更多的待处理物质收集起来，保证本电场装置的除尘效率更高。
实施例16
如图9所示，本实施例提供一种电场装置，可应用于本发明半导体制造洁净室系统的多级电场除尘系统中的一级电场装置中，本实施例中电场装置的结构示意图参见图9。如图9所示，该电场装置包括依次相通的电场装置入口3085、流道3086、电场流道3087、及电场装置出口3088，流道3086中安装有前置电极3083，前置电极3083的截面面积与流道3086的截面面积比为99％-10％，电场装置还包括电场阴极3081和电场阳极3082，电场流道3087位于电场阴极3081和电场阳极3082之间。本发明电场装置的工作原理为：含污染物的气体通过电场装置入口3085进入流道3086，安装在流道3086中的前置电极3083将电子传导给部分污染物，部分污染物带电，当污染物由流道3086进入电场流道3087后，电场阳极3082给已带电的污染物施加吸引力，带电的污染物向电场阳极3082移动，直至该部分污染物附着在电场阳极3082上，同时，电场流道3087中电场阴极3081和电场阳极3082之间形成电离电场，该电离电场将使另一部分未带电的污染物带电，这样另一部分污染物在带电后同样会受到电场阳极3082施加的吸引力，并最终附着在电场阳极3082，从而利用上述电场装置使污染物带电效率更高，带电更充分，进而保证电场阳极3082能收集更多的污染物，并保证本发明电场装置对污染物的收集效率更高。
前置电极3083的截面面积是指前置电极3083沿截面上实体部分的面积之和。另外， 前置电极3083的截面面积与流道3086的截面面积比可以为99％-10％、或90-10％、或80-20％、或70-30％、或60-40％、或50％。
如图9所示，本实施例中前置电极3083和电场阴极3081均与直流电源的阴极电性连接，电场阳极3082与直流电源的阳极电性连接。本实施例中前置电极3083和电场阴极3081均具有负电势，电场阳极3082具有正电势。
如图9所示，本实施例中前置电极3083具体可呈网状，即设有若干通孔。这样，当气体流经流道3086时，利用前置电极3083设有通孔的结构特点，便于气体及污染物流过前置电极3083，并使气体中污染物与前置电极3083接触更加充分，从而使前置电极3083能将电子传导给更多的污染物，并使污染物的带电效率更高。
如图9所示，本实施例中电场阳极3082呈管状，电场阴极3081呈棒状，电场阴极3081穿设在电场阳极3082中。本实施例中电场阳极3082和电场阴极3081呈非对称结构。当气体流入电场阴极3081和电场阳极3082之间形成的电离电场将使污染物带电，且在电场阳极3082施加的吸引力作用下，将带电的污染物收集在电场阳极3082的内壁上。
另外，如图9所示，本实施例中电场阳极3082和电场阴极3081均沿前后方向延伸，电场阳极3082的前端沿前后方向上位于电场阴极3081的前端的前方。且如图9所示，电场阳极3082的后端沿前后方向上位于电场阴极3081的后端的后方。本实施例中电场阳极3082沿前后方向上的长度更长，使得位于电场阳极3082内壁上的吸附面面积更大，从而对带有负电势的污染物的吸引力更大，并能收集更多的污染物。
如图9所示，本实施例中电场阴极3081和电场阳极3082构成电离单元，电离单元有多个，以利用多个电离单元收集更多的污染物，并使得本电场装置对污染物的收集能力更强，且收集效率更高。
本实施例中上述电场阴极3081也称作电晕荷电电极。上述直流电源具体为直流高压电源。前置电极3083和电场阳极3082之间通入直流高压，形成导电回路；电场阴极3081和电场阳极3082之间通入直流高压，形成电离放电电晕电场。本实施例中前置电极3083为密集分布的导体。当容易带电的粉尘经过前置电极3083时，前置电极3083直接将电子给粉尘，粉尘带电，随后被异极的电场阳极3082吸附；同时未带电的粉尘经过电场阴极3081和电场阳极3082形成的电离区，电离区形成的电离氧会把电子荷电给粉尘，这样粉尘继续带电，并被异极的电场阳极3082吸附。
本实施例中电场装置能形成两种及两种以上的上电方式。比如，在气体中氧气充足情况下，可利用电场阴极3081和电场阳极3082之间形成的电离放电电晕电场，电离氧，来使污染物荷电，再利用电场阳极3082收集污染物；而在气体中氧气含量过低、或无氧状态、或污染物为导电尘雾等时，利用前置电极3083直接使污染物上电，让污染物充分带 电后被电场阳极3082吸附。
实施例17
本实施例提供用于半导体制造的洁净室系统，包括洁净室、多级电场除尘系统，所述洁净室的气体入口与所述多级电场除尘系统的除尘系统出口连通，所述多级电场除尘系统102包括上述实施例1-16中至少两个电场装置，所有电场装置串联连接。空气需先流经多级电场除尘系统中所有串联的电场装置，以利用该多级电场除尘系统有效地将空气中的粉尘等待处理物质清除掉，其中对典型23nm颗粒去除效率为99.99％以上，保证空气更加干净，达到半导体制造厂房里空气净化要求，将除尘后的气体输入洁净室。
实施例18
本实施例提供一种用于设计半导体制造洁净室系统方法，包括如下步骤：
选择多级电场除尘系统中电场装置的个数n＝2，即包括两个串联的电场装置，分别为第1级电场装置、第2级电场装置；第1级电场装置和第2级电场装置采用不同电源供电，第1级电场装置的电压为8.1kv，第2级电场装置的电压为7.2kv，使多级电场除尘系统满足总除尘效率大于或等于99.99％，臭氧输出量小于或等于30ppm的要求。
本实施例提供一种用于半导体制造的洁净室系统100，包括洁净室101、多级电场除尘系统102，所述洁净室101的气体入口与所述多级电场除尘系统102的除尘系统出口连通，所述多级电场除尘系统102包括上述实施例1中的电场装置1021(第1级电场装置)和实施例中的电场装置1022(第2级电场装置)，该两个电场装置串联连接。
本实施例提供的多级电场除尘方法，包括：气体进入多级电场除尘系统，先进入第1级电场装置进行电离除尘，然后气体进入第2级电场装置进行电离除尘，经多级电场除尘系统净化处理后的净化气体进入洁净室。图10是本实施例中洁净室系统的结构示意图。
本实施例中，在第1级电场装置的进口处、出口处及第2级电场装置的出口处分别检测气体中不同尺寸大小的固体颗粒物的粒子数量(PN值)，具体检测粒径为23nm、0.3μm、0.5μm、1.0μm、3.0μm、5.0μm、10μm固体颗粒物PN值，检测结果参见表1，表1中数据均为取样6次的平均值。表1中第1级电场装置进口处PN值即为进入多级电场除尘系统的原始气体中PN值。
本实施例中，在第1级电场装置的进口处、出口处及第2级电场装置的出口处分别检测气体中臭氧浓度值，检测结果参见表2，表2中数据均为取样6次的平均值。表2中第1级电场装置进口处臭氧浓度值即为进入多级电场除尘系统的原始气体中臭氧浓度值。
由表1-2可知，本实施例设计的半导体制造洁净室系统以及提供的多级电场除尘系统及多级电场除尘方法使多级电场除尘系统总除尘效率大于99.99％，臭氧输出量小于30ppm，进入洁净室的气体满足半导体制造的要求。
表1
Figure PCTCN2020086848-appb-000001
表2
Figure PCTCN2020086848-appb-000002
实施例19
本实施例还提供一种用于设计半导体制造洁净室系统的多级电场除尘系统的方法，包括如下步骤：
选择多级电场除尘系统中电场装置的个数n＝3，即包括三个串联的电场装置，分别为第1级电场装置、第2级电场装置和第3级电场装置；第1级电场装置的电源电压为8.1KV，第2级电场装置的电源电压为7.2KV，第3级电场装置的电源电压为6.3KV，使多级电场除尘系统满足总除尘效率大于99.99％、臭氧输出量小于30ppm的要求。
本实施例提供一种用于半导体制造的洁净室系统100，包括洁净室101、多级电场除尘系统102，所述洁净室101的气体入口与所述多级电场除尘系统102的除尘系统出口连通，所述多级电场除尘系统102包括上述实施例1中的电场装置1021(第1级电场装置)、实施例1中的电场装置1022(第2级电场装置)和实施例1中的电场装置1023(第3级电场装置)，该三个电场装置串联连接。
本实施例提供的多级电场除尘方法，包括：气体进入多级电场除尘系统，依次进入第1级电场装置、第2级电场装置、第3级电场装置进行电离除尘，经多级电场除尘系统净化处理后的净化气体进入洁净室。图11是本实施例中洁净室系统的结构示意图。
本实施例中，在第1级电场装置的进口处和出口处、第2级电场装置的出口处及第3 级电场装置的出口处分别检测气体中不同尺寸大小的固体颗粒物的粒子数量(PN值)，具体检测粒径为23nm、0.3μm、0.5μm、1.0μm、3.0μm、5.0μm、10μm固体颗粒物PN值，检测结果参见表3，表3中数据均为取样6次的平均值。表3中第1级电场装置进口处PN值即为进入多级电场除尘系统的原始气体中PN值。
本实施例中，在第1级电场装置的进口处和出口处、第2级电场装置的出口处及第3级电场装置的出口处分别检测气体中臭氧浓度值，检测结果参见表4，表4中数据均为取样6次的平均值。表4中第1级电场装置进口处臭氧浓度值即为进入多级电场除尘系统的原始气体中臭氧浓度值。
由表3-4可知，本实施例设计的半导体制造洁净室系统以及提供的多级电场除尘系统及多级电场除尘方法使多级电场除尘系统总除尘效率大于99.99％，臭氧输出量小于30ppm，进入洁净室的气体满足半导体制造的要求。
表3
Figure PCTCN2020086848-appb-000003
表4
Figure PCTCN2020086848-appb-000004
实施例20
本实施例提供一种半导体制造方法，包括如下步骤：
A：空气进入多级电场除尘系统通过电场阳极和电场阴极产生的电离电场，去除气体中的颗粒物；本实施例中电场除尘系统包括实施例18或实施例19的多级电场除尘系统；
经电场除尘后的净化气体进入洁净室，为洁净室内的半导体制造提供净化气体。
在洁净室内，进行如下操作：
S1，采用CVD(Chemical Vapor Deposition，化学气相沉积)或PVD(Physical Vapor Deposition，物理气相沉积)工艺形成在衬底上形成薄膜。
S2，在所述薄膜上形成沟道，所述沟道暴露出所述衬底表面。
所述沟槽形成包括如下步骤：
在所述薄膜表面涂覆光刻胶；
通过掩模板对所述光刻胶进行曝光；
对所述光刻胶进行显影并清洗去除部分光刻胶，暴露出部分薄膜表面；
对暴露出的薄膜进行刻蚀，暴露出部分衬底表面，形成沟道。
S3，对所述沟道暴露出的衬底进行离子渗入，形成具有电子特性的特定结构。
本实施例中，所述光刻胶可以为正胶或反胶。
本实施例中，S1步骤中，所述衬底的材质可以为硅、锗、锗硅、碳化硅、砷化镓、砷化铟或磷化铟。
本实施例中，S1步骤中，所述薄膜的主要成分为氮化硅、氧化硅、碳化硅、多晶硅中的一种或两者以上任意组合。
本实施例中，S2步骤中，所述刻蚀可以为干法刻蚀或湿法刻蚀。
本实施例中，S3步骤中，所述离子渗入为扩散或离子注入。
本实施例中，S3步骤中，所述电子特性为PN结。
综上所述，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (5)

  1. 一种用于半导体制造的洁净室系统的多级电场除尘方法，包括如下步骤：
    使气体通过多级电场除尘系统串联的每个电场装置；
    给每个电场装置施加电压，所述电压足以确保电场除尘系统总除尘效率(100％-(100％-P 1％)*(100％-P 2％)*……*(100％-P n％))大于或等于一个预定值，并且臭氧输出量小于或等于一个预定值，其中，P 1％、P 2％……P n％依次分别为第1级、第2级、……第n级电场装置的除尘效率，n为大于1的整数；
    将除尘后的气体输入洁净室。
  2. 根据权利要求1所述的多级电场除尘方法，其特征在于，施加给每个所述电源装置的电压相同。
  3. 根据权利要求1所述的多级电场除尘方法，其特征在于，施加给每个所述电源装置的电压不完全相同。
  4. 根据权利要求1或3所述的多级电场除尘方法，其特征在于，施加给每个所述电源装置的电压完全不相同。
  5. 一种半导体制造方法，包括如下步骤：
    利用如权利要求1-4任一项所述的多级电场除尘方法去除气体中的颗粒物；除尘后的气体输入洁净室；
    在洁净室内，在衬底上形成薄膜；
    在洁净室内，在所述薄膜上形成沟道，所述沟道暴露出所述衬底表面；
    在洁净室内，对所述沟道暴露出的衬底进行离子渗入，形成具有电子特性的特定结构。
PCT/CN2020/086848 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法 WO2020216353A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202080030933.9A CN113727782A (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法

Applications Claiming Priority (20)

Application Number Priority Date Filing Date Title
CN201910340443.8 2019-04-25
CN201910340445.7 2019-04-25
CN201910340443 2019-04-25
CN201910340445 2019-04-25
CN201910446294 2019-05-27
CN201910446294.3 2019-05-27
CN201910452169 2019-05-28
CN201910452169.3 2019-05-28
CN201910522488.7 2019-06-17
CN201910521796 2019-06-17
CN201910522488 2019-06-17
CN201910521796.8 2019-06-17
CN201910605156.5 2019-07-05
CN201910605156 2019-07-05
CN201910636710.6 2019-07-15
CN201910636710 2019-07-15
CN202010323654.3A CN113522526A (zh) 2020-04-22 2020-04-22 一种用于半导体制造的洁净室系统及其电场除尘方法
CN202010322636.3A CN113522525A (zh) 2020-04-22 2020-04-22 一种用于半导体制造的洁净室系统及其多级电场除尘方法
CN202010322636.3 2020-04-22
CN202010323654.3 2020-04-22

Publications (1)

Publication Number Publication Date
WO2020216353A1 true WO2020216353A1 (zh) 2020-10-29

Family

ID=72940620

Family Applications (9)

Application Number Title Priority Date Filing Date
PCT/CN2020/086853 WO2020216358A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086851 WO2020216356A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086852 WO2020216357A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086855 WO2020216360A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086850 WO2020216355A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086847 WO2020216352A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及半导体制造系统
PCT/CN2020/086854 WO2020216359A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086849 WO2020216354A1 (zh) 2019-04-25 2020-04-24 一种用于设计半导体制造洁净室系统多级电场除尘系统的方法
PCT/CN2020/086848 WO2020216353A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法

Family Applications Before (8)

Application Number Title Priority Date Filing Date
PCT/CN2020/086853 WO2020216358A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086851 WO2020216356A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086852 WO2020216357A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086855 WO2020216360A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086850 WO2020216355A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086847 WO2020216352A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及半导体制造系统
PCT/CN2020/086854 WO2020216359A1 (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法
PCT/CN2020/086849 WO2020216354A1 (zh) 2019-04-25 2020-04-24 一种用于设计半导体制造洁净室系统多级电场除尘系统的方法

Country Status (3)

Country Link
CN (6) CN114072620A (zh)
TW (7) TW202106390A (zh)
WO (9) WO2020216358A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12062535B2 (en) * 2021-07-16 2024-08-13 Taiwan Semiconductor Manufacturing Company Ltd. Particle removal method in semiconductor fabrication process
CN113713526A (zh) * 2021-09-02 2021-11-30 张家港光煌新材料科技有限公司 一种砷化镓制备用尾气过滤装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0498034A (ja) * 1990-08-15 1992-03-30 Takasago Thermal Eng Co Ltd 半導体製造用クリーンルームの海塩粒子汚染防止方法
CN2269215Y (zh) * 1996-07-19 1997-12-03 甘平 通风型高效灭菌空气净化机
CN1520935A (zh) * 2003-02-14 2004-08-18 朱益民 非热放电和光催化协同净化污染空气装置
CN101376034A (zh) * 2008-10-06 2009-03-04 陈竞坤 一种高效电离驱动空气净化装置的电极及电路
US20150090114A1 (en) * 2013-10-01 2015-04-02 Honeywell International Inc. Aircraft electrostatic particle separation control system
CN108499739A (zh) * 2017-09-30 2018-09-07 江森自控空调冷冻设备(无锡)有限公司 高压电源电路、高压电源板以及控制高压电压输出的方法
CN109643681A (zh) * 2016-08-09 2019-04-16 近藤工业株式会社 半导体制造装置

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150457A (en) * 1981-03-12 1982-09-17 Hitachi Plant Eng & Constr Co Ltd Purifier for air
DE3310536A1 (de) * 1983-03-21 1984-09-27 Delbag-Luftfilter Gmbh, 1000 Berlin Elektroschwebstoffilter
JPH0674908B2 (ja) * 1988-06-27 1994-09-21 株式会社荏原製作所 気体の清浄方法及びその装置
CN2205248Y (zh) * 1994-09-13 1995-08-16 郑天安 高效静电除尘器
JP3460465B2 (ja) * 1996-08-20 2003-10-27 株式会社荏原製作所 気体の清浄方法と装置
US20070009406A1 (en) * 1998-11-05 2007-01-11 Sharper Image Corporation Electrostatic air conditioner devices with enhanced collector electrode
JP2001179127A (ja) * 1999-12-27 2001-07-03 Daikin Ind Ltd 電気集塵装置
US20020121352A1 (en) * 2001-03-02 2002-09-05 Lawson J. Alan Electrical field apparatus and methods for fluid for decontamination and other purposes
JP2002289671A (ja) * 2001-03-28 2002-10-04 Toshiba Corp 半導体製造装置及び半導体装置の製造システム
JP3831312B2 (ja) * 2002-07-29 2006-10-11 日本テストパネル株式会社 排気ガス清浄化装置
KR20050112638A (ko) * 2004-05-27 2005-12-01 삼성전자주식회사 가스 분사 수단 및 이를 이용한 반도체 소자의 제조 장치
CN100418637C (zh) * 2004-06-10 2008-09-17 中钢集团天澄环保科技股份有限公司 泛比电阻电除尘器及除尘方法
CN201006047Y (zh) * 2007-03-30 2008-01-16 黄樟焱 多功能旋风式等离子空气处理机
CN101376033A (zh) * 2007-08-27 2009-03-04 华懋科技股份有限公司 无尘室进气净化设备
JP2010110692A (ja) * 2008-11-06 2010-05-20 Daikin Ind Ltd 荷電装置及び空気処理装置
CN101920224B (zh) * 2009-12-31 2012-10-10 周云正 金属带--板结构反应器
CN102671763A (zh) * 2012-04-30 2012-09-19 莱芜钢铁集团有限公司 管道式高风速双荷电区电凝聚装置
CN203108663U (zh) * 2013-01-18 2013-08-07 上海永健仪器设备有限公司 蜂窝静电除尘灭菌模块
CN104275242B (zh) * 2013-07-11 2017-06-16 宁波哲恺电器有限公司 一种空气净化器
CN103706475B (zh) * 2013-12-30 2016-06-01 浙江星月电器有限公司 一种静电式空气净化器的低臭氧装置
CN103817007B (zh) * 2014-03-05 2016-05-18 武汉钢铁(集团)公司 横向极板双极静电凝并除尘装置及其除尘方法
CN105003976A (zh) * 2014-04-22 2015-10-28 王绍坤 双水层、双静电分离式空气净化装置
CN104084312B (zh) * 2014-07-31 2017-02-08 颜为 一种静电式空气净化器的集尘装置
CN104127907A (zh) * 2014-08-06 2014-11-05 上海侃亿诺纺织品有限公司 非热等离子体空气净化消毒反应器
GB2529173B (en) * 2014-08-12 2016-08-24 Novaerus Patents Ltd Flexible electrode assembly for plasma generation and air ducting system including the electrode assembly
CN104819519B (zh) * 2015-05-19 2017-09-29 常熟市东神电子器件有限公司 一种复合型交叉静电电场空气净化装置
CN205518205U (zh) * 2016-03-31 2016-08-31 深圳市中科建设集团有限公司 一种带自动吹风功能的百级无尘车间
CN105689140B (zh) * 2016-04-15 2018-04-10 湖北强达环保科技股份有限公司 一种高效静电除尘器
CN205966185U (zh) * 2016-08-10 2017-02-22 福建龙净环保股份有限公司 一种用于烟气净化的电除雾器
CN106504994A (zh) * 2016-11-08 2017-03-15 信利（惠州）智能显示有限公司 多晶硅薄膜晶体管的生产方法
CN106642377A (zh) * 2016-11-11 2017-05-10 爱普瑞环保科技（广东）有限公司 一种空气净化装置
FI127864B (en) * 2016-12-22 2019-04-15 Valmet Technologies Oy Procedure and arrangements
CN106733194B (zh) * 2017-03-31 2018-10-16 广东美的厨房电器制造有限公司 静电装置和油烟机
CN206980986U (zh) * 2017-07-18 2018-02-09 佛山市嘉名环保节能设备科技有限公司 一种静电除尘装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0498034A (ja) * 1990-08-15 1992-03-30 Takasago Thermal Eng Co Ltd 半導体製造用クリーンルームの海塩粒子汚染防止方法
CN2269215Y (zh) * 1996-07-19 1997-12-03 甘平 通风型高效灭菌空气净化机
CN1520935A (zh) * 2003-02-14 2004-08-18 朱益民 非热放电和光催化协同净化污染空气装置
CN101376034A (zh) * 2008-10-06 2009-03-04 陈竞坤 一种高效电离驱动空气净化装置的电极及电路
US20150090114A1 (en) * 2013-10-01 2015-04-02 Honeywell International Inc. Aircraft electrostatic particle separation control system
CN109643681A (zh) * 2016-08-09 2019-04-16 近藤工业株式会社 半导体制造装置
CN108499739A (zh) * 2017-09-30 2018-09-07 江森自控空调冷冻设备(无锡)有限公司 高压电源电路、高压电源板以及控制高压电压输出的方法

Also Published As

Publication number Publication date
WO2020216356A1 (zh) 2020-10-29
WO2020216352A1 (zh) 2020-10-29
WO2020216355A1 (zh) 2020-10-29
CN114072619A (zh) 2022-02-18
CN114072620A (zh) 2022-02-18
TW202042910A (zh) 2020-12-01
TW202101644A (zh) 2021-01-01
TW202106390A (zh) 2021-02-16
TW202106391A (zh) 2021-02-16
WO2020216357A1 (zh) 2020-10-29
TWI739499B (zh) 2021-09-11
TW202042908A (zh) 2020-12-01
CN218763868U (zh) 2023-03-28
WO2020216359A1 (zh) 2020-10-29
TWI739501B (zh) 2021-09-11
TWI739502B (zh) 2021-09-11
TWI730738B (zh) 2021-06-11
TW202042909A (zh) 2020-12-01
CN113727783A (zh) 2021-11-30
TWI739500B (zh) 2021-09-11
CN113727782A (zh) 2021-11-30
WO2020216360A1 (zh) 2020-10-29
CN113767254A (zh) 2021-12-07
TWI754983B (zh) 2022-02-11
WO2020216358A1 (zh) 2020-10-29
WO2020216354A1 (zh) 2020-10-29
TW202039085A (zh) 2020-11-01

Similar Documents

Publication Publication Date Title
TW202015814A (zh) 空氣除塵系統
WO2020216353A1 (zh) 一种用于半导体制造的洁净室系统的多级电场除尘方法及半导体制造方法
CN218132543U (zh) 一种用于半导体制造的洁净室系统
WO2020238978A1 (zh) 一种电场装置及减少电场耦合方法
CN113522526A (zh) 一种用于半导体制造的洁净室系统及其电场除尘方法
CN113522525A (zh) 一种用于半导体制造的洁净室系统及其多级电场除尘方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20795152

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20795152

Country of ref document: EP

Kind code of ref document: A1