WO2020215415A1 - Oled显示面板的外围电路结构及oled显示面板 - Google Patents

Oled显示面板的外围电路结构及oled显示面板 Download PDF

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Publication number
WO2020215415A1
WO2020215415A1 PCT/CN2019/087616 CN2019087616W WO2020215415A1 WO 2020215415 A1 WO2020215415 A1 WO 2020215415A1 CN 2019087616 W CN2019087616 W CN 2019087616W WO 2020215415 A1 WO2020215415 A1 WO 2020215415A1
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Prior art keywords
display panel
oled display
wiring
peripheral circuit
circuit structure
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PCT/CN2019/087616
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English (en)
French (fr)
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崔耀晨
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武汉华星光电半导体显示技术有限公司
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Publication of WO2020215415A1 publication Critical patent/WO2020215415A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance

Definitions

  • the present invention relates to the field of display technology, in particular to a peripheral circuit structure of an OLED display panel and an OLED display panel.
  • Organic light-emitting diode display devices also have excellent characteristics such as self-luminescence, no backlight, high contrast, thin thickness, wide viewing angle, fast response speed, can be used for flexible panels, wide operating temperature range, simple structure and manufacturing process, etc. It is considered as the emerging application technology of the next generation flat panel display.
  • An OLED display device usually includes: a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light emitting layer provided on the hole transport layer, a device An electron transport layer on the light-emitting layer, an electron injection layer on the electron transport layer, and a cathode on the electron injection layer.
  • the light-emitting principle of OLED display devices is that semiconductor materials and organic light-emitting materials are driven by an electric field to cause light emission through carrier injection and recombination.
  • OLED display devices usually use ITO pixel electrodes and metal electrodes as the anode and cathode of the device, respectively.
  • ITO pixel electrodes and metal electrodes as the anode and cathode of the device, respectively.
  • electrons and holes are injected from the cathode and anode to the electron transport layer and hole transport layer, respectively. Holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer respectively, and meet in the light-emitting layer to form excitons and excite light-emitting molecules. The latter emit visible light through radiation relaxation.
  • a circle of cathode traces arranged around the display area is formed in the frame area of the substrate.
  • the cathode traces are electrically connected to the drive IC (Drive IC). It can be connected to the driver chip to receive the low voltage power from the driver chip and transmit it to the cathode to drive the OLED in the display area to emit light.
  • Drive IC drive IC
  • Frames and borderless display panels have gradually become the mainstream, and the impedance drop of the cathode traces in the frame area (IR drop) will cause the position of the cathode traces close to the driver chip to be different from the position far away from the driver chip.
  • the current common solution is to reduce the impedance by increasing the width of the cathode trace or the thickness of the metal film, but this will increase the frame width of the display panel, which does not meet the current narrow frame requirements, and increases the metal film.
  • the thickness conflicts with the existing process capability.
  • the purpose of the present invention is to provide a peripheral circuit structure of an OLED display panel, which can reduce the impedance voltage drop of the wiring in the peripheral circuit, improve the display effect of the OLED display panel, and improve uneven brightness.
  • the object of the present invention is also to provide an OLED display panel, which can reduce the impedance voltage drop of the wiring in the peripheral circuit, improve the display effect of the OLED display panel, and improve the uneven brightness.
  • the present invention provides a peripheral circuit structure of an OLED display panel, which includes a substrate, an insulating layer provided on the substrate, and wiring provided on the insulating layer;
  • the substrate includes a display area and a frame area surrounding the display area, the wiring is located in the frame area, the insulating layer and the area corresponding to the wiring are formed with a plurality of grooves arranged at intervals, so The wiring fills the plurality of grooves.
  • the extending direction of the groove is parallel to the extending direction of the wire, and the plurality of grooves are arranged at intervals in a direction perpendicular to the extending direction of the wire.
  • the depth of the groove is 0.8 to 1.2 ⁇ m, the width is 2 to 3 ⁇ m, and the taper angle is 40 to 50°.
  • It also includes a planarization layer provided on the insulating layer and a portion of the trace on the side close to the display area, an auxiliary connection line provided on the planarization layer and the trace, and the auxiliary connection line On the first electrode.
  • the material of the wiring and the first electrode is metal, and the material of the auxiliary connecting line is a transparent conductive material.
  • the line width of the auxiliary connecting line is greater than the line width of the routing line.
  • It also includes a driving chip arranged on one side of the substrate and electrically connected with the wiring.
  • the wiring is arranged around the display area, and both ends of the wiring are electrically connected to the driving chip.
  • the driving chip provides a low power supply voltage to the wiring.
  • the present invention also provides an OLED display panel including the peripheral circuit structure of the OLED display panel according to any one of claims 1 to 9.
  • the present invention provides a peripheral circuit structure of an OLED display panel, including a substrate, an insulating layer provided on the substrate, and wiring provided on the insulating layer;
  • the substrate includes a display area And a frame area surrounding the display area, the wiring is located in the frame area, the insulating layer and the area corresponding to the wiring are formed with a plurality of grooves arranged at intervals, and the wiring fills the In the multiple grooves, by setting grooves under the wires and filling the wires into the grooves, the cross-sectional area of the wires can be increased, the impedance voltage drop of the wires can be reduced, and the display effect of the OLED display panel can be improved , Improve uneven brightness.
  • the invention also provides an OLED display panel, which can reduce the impedance voltage drop of the wiring in the peripheral circuit, improve the display effect of the OLED display panel, and improve the uneven brightness.
  • 1 is a schematic diagram of wiring in the peripheral circuit structure of the OLED display panel of the present invention.
  • Fig. 2 is a cross-sectional view at A-A in Fig. 1.
  • the present invention provides a peripheral circuit structure of an OLED display panel, including a substrate 10, an insulating layer 20 provided on the substrate 10, and wiring 30 provided on the insulating layer 20;
  • the substrate 10 includes a display area 11 and a frame area 12 surrounding the display area 11.
  • the wiring 30 is located in the frame area 12, and the insulating layer 20 and the area corresponding to the wiring 30 are spaced apart A plurality of grooves 21 are arranged, and the wiring 30 fills the plurality of grooves 21.
  • the extending direction of the groove 21 is parallel to the extending direction of the wire 30, and the plurality of grooves 21 are arranged at intervals in a direction perpendicular to the extending direction of the wire 30.
  • the depth D of the groove 21 is 0.8-1.2 ⁇ m
  • the width W is 2-3 ⁇ m
  • the taper angle C is 40-50°.
  • the peripheral circuit structure of the OLED display panel further includes a planarization layer 40 provided on the insulating layer 20 and a portion of the wiring 30 on the side close to the display area 11, and a planarization layer 40 provided on the planarization layer. 40 and the auxiliary connection line 50 on the wiring 30 and the first electrode 60 provided on the auxiliary connection line 50.
  • the film layer of the OLED display panel includes a first metal layer on a substrate, a gate insulating layer on the first metal layer, a semiconductor layer on the gate insulating layer, a gate insulating layer and a semiconductor layer.
  • the first metal layer is formed with a gate electrode and a gate line
  • the second metal layer forms a source electrode, a source electrode line, and a drain electrode
  • the OLED layer includes an anode, a light-emitting layer, and a cathode stacked in sequence.
  • the gate insulating layer and the interlayer insulating layer together form the insulating layer 20
  • the wiring 30 is located in the second metal layer
  • the auxiliary connecting line 50 is connected to the
  • the anodes are arranged in the same layer
  • the first electrode 60 is the cathode.
  • the material of the wiring 30 and the first electrode 60 is metal
  • the material of the auxiliary connecting line 50 is a transparent conductive material.
  • the line width of the auxiliary connecting line 50 is greater than the line width of the wiring 30, and further, by making the edge of the auxiliary connecting line 50 close to the display area 11 beyond the wiring 30 and close to the line 30
  • the edge of the display area 11 is such that the line width of the auxiliary connecting line 50 is larger than the line width of the wiring 30 while maintaining the narrow frame of the OLED display panel.
  • the peripheral circuit structure of the OLED display panel further includes a driving chip 70 arranged on one side of the substrate 10 and electrically connected to the wiring 30. Further, the wiring 30 surrounds the display area. 11, and both ends of the wiring 30 are electrically connected to the driving chip 70.
  • the driving chip 70 provides the power supply low voltage VSS to the wiring.
  • the total current on the trace 30 can reach about 300mA
  • the line width of the trace 30 is about 300um
  • the sheet resistance is about 0.05 ⁇ /sq. It can be calculated that the voltage drop between the side of the trace 30 close to the driver chip 70 and the side far from the driver chip 70 in the maximum brightness state can reach about 2V (the power supply low voltage VSS is -4V under normal working conditions, and the power supply high voltage VDD is 4.6V), so the brightness cannot reach 23%.
  • the invention is applied to the OLED display panel, and 80 openings are added under the trace 30 with a width of 2.5um, a depth of 1um, and a taper angle (taper )
  • the cross-sectional area of the trace 30 can be expanded by 23%, and the corresponding voltage drop can be reduced by 0.38V, which can reduce the uneven brightness caused by the voltage drop to 18.8%, and the improvement effect is obvious, and there is no need to increase In the case of process flow and film thickness.
  • the present invention also provides an OLED display panel including the above-mentioned peripheral circuit structure of the OLED display panel.
  • the present invention provides a peripheral circuit structure of an OLED display panel, which includes a substrate, an insulating layer provided on the substrate, and wiring provided on the insulating layer; the substrate includes a display area and A frame area surrounding the display area, the wiring is located in the frame area, the insulating layer and the area corresponding to the wiring are formed with a plurality of grooves arranged at intervals, and the wiring fills the multiple grooves.
  • a groove By setting a groove under the trace and filling the trace into the groove, the cross-sectional area of the trace can be increased, the impedance voltage drop of the trace can be reduced, and the display effect of the OLED display panel can be improved. Uneven brightness.
  • the invention also provides an OLED display panel, which can reduce the impedance voltage drop of the wiring in the peripheral circuit, improve the display effect of the OLED display panel, and improve the uneven brightness.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种OLED显示面板的外围电路结构及OLED显示面板。所述OLED显示面板的外围电路结构包括基板、设于所述基板上的绝缘层及设于所述绝缘层上的走线；所述基板包括显示区及包围所述显示区的边框区，所述走线位于所述边框区内，所述绝缘层与所述走线对应的区域形成有间隔排列的多个凹槽，所述走线填充所述多个凹槽，通过在走线下方设置凹槽，并将走线填充到所述凹槽中，能够增加走线的截面积，降低走线的阻抗压降，提升OLED显示面板的显示效果，改善亮度不均。

Description

OLED显示面板的外围电路结构及OLED显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板的外围电路结构及OLED显示面板。
 背景技术
有机发光二极管显示器件由于同时具备自发光，不需背光源、对比度高、厚度薄、视角广、反应速度快、可用于挠曲性面板、使用温度范围广、构造及制程较简单等优异特性，被认为是下一代平面显示器的新兴应用技术。
OLED显示器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。
具体的，OLED显示器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
在现有的OLED显示装置中，为了向阴极提供电源低电压（VSS），会在基板的边框区形成一圈围绕显示区设置的阴极走线，该阴极走线与驱动芯片（Drive IC）电性连接，以从驱动芯片接收电源低电压，传输至阴极，驱动显示区内的OLED发光，而随着显示技术的发展，消费者的对显示屏的边框的宽度的要求越来越高，窄边框及无边框的显示面板逐渐成为主流，而设于边框区的阴极走线本身的阻抗压降（IR drop）会导致靠近驱动芯片的阴极走线的位置与远离驱动芯片的位置电压不同，进而导致亮度不均匀，目前常见解决方案是通过增加阴极走线线宽或金属膜层厚度来降低阻抗，但这会导致显示面板的边框宽度增加，不符合现今的窄边框要求，而增加金属膜层厚度又与现有的工艺能力冲突。
 技术问题
本发明的目的在于提供一种OLED显示面板的外围电路结构，能够降低外围电路中走线的阻抗压降，提升OLED显示面板的显示效果，改善亮度不均。
本发明的目的还在于提供一种OLED显示面板，能够降低外围电路中走线的阻抗压降，提升OLED显示面板的显示效果，改善亮度不均。
 技术解决方案
为实现上述目的，本发明提供了一种OLED显示面板的外围电路结构，包括基板、设于所述基板上的绝缘层及设于所述绝缘层上的走线；
所述基板包括显示区及包围所述显示区的边框区，所述走线位于所述边框区内，所述绝缘层与所述走线对应的区域形成有间隔排列的多个凹槽，所述走线填充所述多个凹槽内。
所述凹槽的延伸方向与所述走线的延伸方向平行，所述多个凹槽沿与所述走线的延伸方向垂直的方向间隔排列。
所述凹槽的深度为0.8~1.2μm，宽度为2~3μm，锥度角为40~50°。
还包括设于所述绝缘层及靠近所述显示区的一侧的部分走线上的平坦化层、设于所述平坦化层及走线上的辅助连接线以及设于所述辅助连接线上的第一电极。
所述走线及第一电极的材料均为金属，所述辅助连接线的材料为透明导电材料。
所述辅助连接线的线宽大于所述走线的线宽。
还包括设于所述基板一侧并与所述走线电性连接的驱动芯片。
所述走线围绕所述显示区设置，且所述走线的两端均电性连接至驱动芯片。
所述驱动芯片向所述走线提供电源低电压。
本发明还提供一种OLED显示面板，包括如权利要求1至9任一项所述的OLED显示面板的外围电路结构。
 有益效果
本发明的有益效果：本发明提供了一种OLED显示面板的外围电路结构，包括基板、设于所述基板上的绝缘层及设于所述绝缘层上的走线；所述基板包括显示区及包围所述显示区的边框区，所述走线位于所述边框区内，所述绝缘层与所述走线对应的区域形成有间隔排列的多个凹槽，所述走线填充所述多个凹槽内，通过在走线下方设置凹槽，并将走线填充到所述凹槽中，能够增加走线的截面积，降低走线的阻抗压降，提升OLED显示面板的显示效果，改善亮度不均。本发明还提供一种OLED显示面板，能够降低外围电路中走线的阻抗压降，提升OLED显示面板的显示效果，改善亮度不均。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的OLED显示面板的外围电路结构中走线的示意图；
图2为图1中A-A处的剖面图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图2，本发明提供一种OLED显示面板的外围电路结构，包括基板10、设于所述基板10上的绝缘层20及设于所述绝缘层20上的走线30；
所述基板10包括显示区11及包围所述显示区11的边框区12，所述走线30位于所述边框区12内，所述绝缘层20与所述走线30对应的区域形成有间隔排列的多个凹槽21，所述走线30填充所述多个凹槽21。
具体地，所述凹槽21的延伸方向与所述走线30的延伸方向平行，所述多个凹槽21沿与所述走线30的延伸方向垂直的方向间隔排列。
可选地，如图2所示，所述凹槽21的深度D为0.8~1.2μm，宽度W为2~3μm，锥度角C为40~50°。
具体地，所述OLED显示面板的外围电路结构还包括设于所述绝缘层20及靠近所述显示区11的一侧的部分走线30上的平坦化层40、设于所述平坦化层40及走线30上的辅助连接线50以及设于所述辅助连接线50上的第一电极60。
进一步地，所述OLED显示面板的膜层包括位于基板上的第一金属层、位于第一金属层上的栅极绝缘层、位于栅极绝缘层上的半导体层、位于栅极绝缘层及半导体层上的层间绝缘层、位于所述层间绝缘层上的第二金属层、位于所述第二金属层及层间绝缘层上的平坦层、位于所述平坦层上的OLED层，其中，所述第一金属层形成有栅极和栅极线，所述第二金属层形成有源极、源极线及漏极，所述OLED层包括依次层叠设置的阳极、发光层及阴极。对应到本发明的OLED显示面板的外围电路结构中，所述栅极绝缘层和层间绝缘层共同组成了绝缘层20，走线30位于第二金属层，所述辅助连接线50与所述阳极同层设置，所述第一电极60即为阴极。
可选地，所述走线30及第一电极60的材料均为金属，所述辅助连接线50的材料为透明导电材料。
具体地，所述辅助连接线50的线宽大于所述走线30的线宽，进一步地，通过使得所述辅助连接线50的靠近所述显示区11的边缘超出所述走线30靠近所述显示区11的边缘，以使得辅助连接线50的线宽大于所述走线30的线宽的同时，保持OLED显示面板的窄边框。
具体地，所述OLED显示面板的外围电路结构还包括设于所述基板10一侧并与所述走线30电性连接的驱动芯片70，进一步地，所述走线30围绕所述显示区11设置，且所述走线30的两端均电性连接至驱动芯片70。
具体地，所述驱动芯片70向所述走线提供电源低电压VSS。
举例说明，目前6寸左右的OLED显示面板工作在最大亮度状态时，走线30上总电流可达300mA左右，走线30的线宽约为300um，方块电阻约为0.05Ω/sq，据此可计算出在最大亮度状态时走线30靠近驱动芯片70的一侧与远离驱动芯片70的一侧之间压降可达2V左右（正常工作状态下电源低电压VSS为-4V，电源高电压VDD为4.6V），因此造成的亮度不均可达23%，将本发明应用于该OLED显示面板中，在走线30下方增加80个开口宽度为2.5um，深度为1um，锥度角（taper）为45°的凹槽21，走线30的截面积能够扩大23%，相应压降减少0.38V，能够将因压降导致的亮度不均降至18.8%，改善效果明显，且不需要增加工艺流程及成膜厚度的情况下。
基于上述的OLED显示面板的外围电路结构，本发明还提供一种OLED显示面板，包括上述的OLED显示面板的外围电路结构。
综上所述，本发明提供了一种OLED显示面板的外围电路结构，包括基板、设于所述基板上的绝缘层及设于所述绝缘层上的走线；所述基板包括显示区及包围所述显示区的边框区，所述走线位于所述边框区内，所述绝缘层与所述走线对应的区域形成有间隔排列的多个凹槽，所述走线填充所述多个凹槽，通过在走线下方设置凹槽，并将走线填充到所述凹槽中，能够增加走线的截面积，降低走线的阻抗压降，提升OLED显示面板的显示效果，改善亮度不均。本发明还提供一种OLED显示面板，能够降低外围电路中走线的阻抗压降，提升OLED显示面板的显示效果，改善亮度不均。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种OLED显示面板的外围电路结构，包括基板、设于所述基板上的绝缘层及设于所述绝缘层上的走线；
    所述基板包括显示区及包围所述显示区的边框区，所述走线位于所述边框区内，所述绝缘层与所述走线对应的区域形成有间隔排列的多个凹槽，所述走线填充所述多个凹槽。
  2. 如权利要求1所述的OLED显示面板的外围电路结构，其中，所述凹槽的延伸方向与所述走线的延伸方向平行，所述多个凹槽沿与所述走线的延伸方向垂直的方向间隔排列。
  3. 如权利要求1所述的OLED显示面板的外围电路结构，其中，所述凹槽的深度为0.8~1.2μm，宽度为2~3μm，锥度角为40~50°。
  4. 如权利要求1所述的OLED显示面板的外围电路结构，还包括设于所述绝缘层及靠近所述显示区的一侧的部分走线上的平坦化层、设于所述平坦化层及走线上的辅助连接线以及设于所述辅助连接线上的第一电极。
  5. 如权利要求4所述的OLED显示面板的外围电路结构，其中，所述走线及第一电极的材料均为金属，所述辅助连接线的材料为透明导电材料。
  6. 如权利要求4所述的OLED显示面板的外围电路结构，其中，所述辅助连接线的线宽大于所述走线的线宽。
  7. 如权利要求1所述的OLED显示面板的外围电路结构，还包括设于所述基板一侧并与所述走线电性连接的驱动芯片。
  8. 如权利要求7所述的OLED显示面板的外围电路结构，其中，所述走线围绕所述显示区设置，且所述走线的两端均电性连接至驱动芯片。
  9. 如权利要求7所述的OLED显示面板的外围电路结构，其中，所述驱动芯片向所述走线提供电源低电压。
  10. 一种OLED显示面板，包括如权利要求1所述的OLED显示面板的外围电路结构。
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