WO2019179216A1 - Oled器件的制作方法 - Google Patents

Oled器件的制作方法 Download PDF

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Publication number
WO2019179216A1
WO2019179216A1 PCT/CN2019/070487 CN2019070487W WO2019179216A1 WO 2019179216 A1 WO2019179216 A1 WO 2019179216A1 CN 2019070487 W CN2019070487 W CN 2019070487W WO 2019179216 A1 WO2019179216 A1 WO 2019179216A1
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layer
cathode
cathode contact
oled device
fabricating
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PCT/CN2019/070487
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English (en)
French (fr)
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邴一飞
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2019179216A1 publication Critical patent/WO2019179216A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating an OLED device.
  • OLED Organic Light Emitting Diodes
  • LCD Liquid Crystal Display
  • OLED displays have the advantages of fast response, high contrast, wide viewing angle, and easy to realize flexible display. They are generally optimistic in the industry. The industry agrees that OLED displays are likely to become the next generation display. The mainstream product of technology.
  • AMOLED Active-matrix organic light emitting diode
  • LCD display panels have the same display principle, and are controlled by Thin Film Transistor (TFT) switches for each sub-pixel. Status to achieve display.
  • the difference between the two is that the AMOLED display changes the light-emitting brightness by controlling the current on the OLED through the TFT; the LCD display adjusts the transmittance of the backlight by controlling the voltage applied across the liquid crystal cell through the TFT.
  • the driving current capability of the TFT AMOLED The display requirements are higher.
  • the OLED is very sensitive to its driving current, and the weak current change affects its luminous intensity. Therefore, the TFT driving tube is required to continuously and stably supply the operating current. This imposes stringent requirements on the stability of the AMOLED driver circuit, which also increases the design goals for the AMOLED driver circuit.
  • IR Drop At normal temperature, the metal conductor resistance is non-zero, and the current through the conductor will produce a certain voltage drop. This phenomenon is called IR Drop.
  • the IR Drop on the metal wire causes a potential difference at different locations from the input. On a large-area display panel, this IR The Drop causes a difference in the current on the OLEDs at different positions, which results in uneven illumination of the panel and quality of the image display.
  • An object of the present invention is to provide a method for fabricating an OLED device, which can effectively prevent IR drop of an OLED device, thereby improving the brightness unevenness of the OLED display panel.
  • the present invention provides a method of fabricating an OLED device, comprising the steps of:
  • Step S1 providing a substrate, forming spaced anode layers and cathode contact layers on the substrate;
  • Step S2 forming a pixel defining layer on the base substrate, the anode layer and the cathode contact layer, the pixel defining layer enclosing the pixel opening on the anode layer and correspondingly providing a cathode contact hole above the cathode contact layer;
  • Step S3 forming a hole injection layer, a hole transport layer, a light-emitting layer and an electron transport layer in this order from bottom to top on the anode layer, the electron transport layer extending from the pixel opening into the cathode contact hole and The cathode contact layers are in contact;
  • Step S4 forming a cathode layer on the electron transport layer, the cathode layer covering a cathode contact layer, the electron transport layer separating the cathode layer from the cathode contact layer;
  • Step S5 applying a voltage of equal potential to the anode layer and the cathode layer, and applying a voltage having a potential lower than the potential of the cathode layer to the cathode contact layer, so that a potential difference is formed between the cathode contact layer and the cathode layer, and the electron transport layer is in the electric field. Under the action of being broken down and conducting, the cathode layer and the cathode contact layer are electrically conducted.
  • a potential difference formed between the cathode contact layer and the cathode layer is 10V-30V.
  • the cathode contact layer and the cathode layer are maintained in a state of potential difference for 5 minutes to 30 minutes.
  • a voltage applied to the anode layer and the cathode layer is 10V-30V, and a voltage applied to the cathode contact layer is -20V-20V.
  • the electron transport layer is formed by a vapor deposition method.
  • the hole injection layer, the hole transport layer, and the light-emitting layer are respectively formed by a vapor deposition method or an inkjet printing method.
  • the material of the anode layer and the cathode contact layer is a hydrophilic conductive material
  • the material of the pixel defining layer is a hydrophobic material
  • the hole injection layer, the hole transport layer and the light emitting layer are formed in the pixel opening.
  • the cathode contact layer is simultaneously separated from the anode layer, the hole injection layer, the hole transport layer, and the light-emitting layer by the pixel defining layer.
  • the anode layer and the cathode contact layer are separated by 10 ⁇ m to 20 ⁇ m.
  • the invention provides a method for fabricating an OLED device, wherein a cathode contact layer spaced apart from the anode layer is disposed on the substrate, and a cathode contact hole is disposed on the pixel defining layer corresponding to the cathode contact layer, and electron transport is performed during the manufacturing process.
  • the layer extends from within the pixel opening into the cathode contact hole to space the cathode layer from the cathode contact layer.
  • the cathode layer and the anode layer are equally applied in order to electrically conduct between the cathode contact layer and the cathode layer.
  • the positive voltage of the potential while applying a voltage lower than the potential of the cathode layer to the cathode contact layer, a potential difference is formed between the cathode contact layer and the cathode layer, and the electron transport layer is broken down by the electric field to conduct electricity, thereby realizing the cathode layer and
  • the electrical conduction of the cathode contact layer when the OLED device is in operation, the cathode contact hole layer can directly provide voltage and current compensation to the cathode layer, thereby preventing the brightness unevenness caused by the IR drop of the OLED display panel in a large area.
  • step 1 is a schematic diagram of step 1 of a method of fabricating an OLED device of the present invention
  • step 2 is a schematic diagram of step 2 of a method of fabricating an OLED device of the present invention.
  • step 3 is a schematic diagram of step 3 of a method of fabricating an OLED device of the present invention.
  • step 4 is a schematic diagram of step 4 of a method of fabricating an OLED device of the present invention.
  • the present invention provides a method for fabricating an OLED device, including the following steps:
  • Step S1 as shown in FIG. 2, a base substrate 10 is provided, on which a phased anode layer 21 and a cathode contact layer 30 are formed.
  • the base substrate 10 is a glass substrate.
  • the anode layer 21 and the cathode contact layer 30 are separated by 10 ⁇ m to 20 ⁇ m, and are not connected to each other.
  • the material of the anode layer 21 and the cathode contact layer 30 is a hydrophilic conductive material.
  • Step S2 as shown in FIG. 3, a pixel defining layer 40 is formed on the base substrate 10, the anode layer 21, and the cathode contact layer 30, and the pixel defining layer 40 encloses the pixel opening 41 on the anode layer 21 and A cathode contact hole 45 is correspondingly disposed above the cathode contact layer 30.
  • the cathode contact layer 30 is separated from the anode layer 21 by the pixel defining layer 40.
  • Step S3 as shown in FIG. 4, a hole injection layer is formed on the anode layer 21 in order from bottom to top (Hole Inject) Layer, HIL) 24, a hole transport layer (HTL) 25, an emitting layer (EML) 26, and an electron transport layer (ETL) 27, the electron transport layer 27 from the
  • HIL Hole Inject Layer
  • HTL hole transport layer
  • EML emitting layer
  • ETL electron transport layer
  • the electron transport layer 27 is formed by vapor deposition from a vapor deposition material. It should be noted that, when the OLED is fabricated by the vapor deposition method, since the preparation of the independent electron transport layer 27 is not technically possible, the cathode contact layer 30 cannot be directly connected to the cathode layer 23, and the cathode contact hole layer 30 cannot be realized. jobs.
  • the electron transport layer 27 is disposed above the anode layer 21 and the cathode contact layer 30, and is not separated by the pixel defining layer 40, the electron transport layer 27 located in the pixel opening 41 and the electrons located in the cathode contact hole 45.
  • the transport layer 27 is connected on the pixel definition layer 40.
  • the hole injection layer 24, the hole transport layer 25 and the light emitting layer 26 are formed in the pixel opening 41; the pixel defining layer 40 simultaneously connects the cathode contact layer 30 and the hole The injection layer 24, the hole transport layer 25, and the light-emitting layer 26 are separated.
  • the hole injection layer 24, the hole transport layer 25, and the light-emitting layer 26 are respectively formed by a vapor deposition method or an inkjet printing method (Ink-jet Print, IJP).
  • Step S4 as shown in FIG. 5, a cathode layer 23 is formed on the electron transport layer 27, the cathode layer 23 covering the cathode contact layer 30, and the electron transport layer 27 spaces the cathode layer 23 from the cathode contact layer 30. .
  • the cathode layer 23 is higher than the pixel defining layer 40 and is not separated by the pixel defining layer 40.
  • the cathode layer 23 located above the pixel opening 41 and above the cathode contact hole 45 is connected above the pixel defining layer 40, which is a whole surface. structure.
  • Step S5 applying a voltage having an equal potential ranging from 10V to 30V to the anode layer 21 and the cathode layer 23 while applying a potential lower than the potential of the cathode layer 23 to the cathode contact layer 30 is -
  • a voltage of 20V-20V forms a potential difference of 10V-30V between the cathode contact layer 30 and the cathode layer 23 for 5 minutes to 30 minutes, and the electron transport layer 27 is broken down by the electric field to conduct electricity.
  • the cathode layer 23 and the cathode contact layer 30 are electrically conducted.
  • the OLED device of the present invention is provided with a cathode contact layer 30 disposed on the base substrate 10 spaced apart from the anode layer 21, and a cathode contact hole 45 is disposed on the pixel defining layer 40 corresponding to the cathode contact layer 30.
  • the medium electron transport layer 27 extends from the inside of the pixel opening 41 into the cathode contact hole 45 to space the cathode layer 23 from the cathode contact layer 30.
  • a positive voltage of equal potential is applied to the cathode layer 23 and the anode layer 21 while a negative voltage lower than the potential of the cathode layer 23 is applied to the cathode contact layer 30 to form a potential difference between the cathode contact layer 30 and the cathode layer, and the electron transport layer 27 Under the action of the electric field, it is broken down to conduct electricity, thereby achieving electrical conduction between the cathode layer 23 and the cathode contact layer 30, so that the fabricated OLED device is applied to the OLED display panel and a positive voltage is applied to the anode layer 21 during operation, the cathode
  • the same negative voltage is applied to each of the layer 23 and the cathode contact hole layer 30, and the cathode contact hole layer 30 can directly supply voltage and current compensation to the cathode layer 23, since each pixel of the OLED
  • the electrically conductive member are provided with cathode contact layer 23 and the cathode layer 30, and thus can prevent a large area OLED display panel
  • the present invention provides a method for fabricating an OLED device, wherein a cathode contact layer spaced apart from the anode layer is disposed on the substrate, and a cathode contact hole is disposed on the pixel defining layer corresponding to the cathode contact layer.
  • the electron transport layer extends from the pixel opening into the cathode contact hole to space the cathode layer from the cathode contact layer.
  • the cathode layer is electrically connected between the cathode contact layer and the cathode layer.
  • the cathode contact hole layer can directly provide voltage and current compensation to the cathode layer, thereby preventing the brightness unevenness caused by the IR drop of the OLED display panel in a large area.

Abstract

一种OLED器件的制作方法，包括：在衬底基板（10）上设置与阳极层（21）相间隔的阴极接触层（30），在像素定义层（40）上对应于阴极接触层（30）的上方设置阴极接触孔（45），电子传输层（27）从像素开口（41）内延伸到阴极接触孔（45）内，对阴极层（23）和阳极层（21）施加相等电势的正电压，同时对阴极接触层（30）施加一个小于阴极层（23）电势的电压，电子传输层（27）在电场的作用下被击穿而导电。

Description

OLED器件的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED器件的制作方法。
 背景技术
有机电致发光二极体（Organic Light Emitting Diodes，OLED）属于一种新型电流型半导体发光器件，是通过控制该器件载流子的注入和复合激发有机材料发光显示，属于一种自主发光技术。与被动发光的液晶显示器（ Liquid Crystal Display ，LCD）相比，自主发光的OLED显示器具有响应速度快、对比度高、视角广等优点，并且容易实现柔性显示，被业内普遍看好，业界一致认为OLED显示器极有可能成为下一代显示技术的主流产品。
有源矩阵有机电致发光二极体（Active-matrix organic light emitting diode，AMOLED）与LCD两种面板的显示原理基本相同，都是通过控制每个子像素的薄膜晶体管（Thin Film Transistor，TFT）开关状态来实现显示的。两者的区别在于：AMOLED显示是通过TFT控制OLED上的电流改变其发光亮度；LCD显示是通过TFT控制加载在液晶盒两端的电压调整其背光的透射率。两者相比，对TFT的驱动电流能力，AMOLED 显示器要求更高。OLED对其驱动电流非常灵敏，微弱的电流变化会影响其发光强度，因此要求TFT驱动管能持续稳定地提供工作电流。这对AMOLED驱动电路的稳定性提出了严格的要求，该要求也提高了对AMOLED驱动电路的设计目标。
常温下，金属导体电阻为非零值，经过导体的电流会产生一定的电压降，这一现象被称为压降（IR Drop）。金属导线上的IR Drop会导致在距离输入端的不同位置存在电位差异。在大面积显示的面板上，这种IR Drop会使得处于不同位置的OLED上的电流产生差异，进而导致面板发光不均匀，影像图象显示质量。
 技术问题
本发明的目的在于提供一种OLED器件的制作方法，能够有效的防止OLED器件发生IR Drop，进而改善OLED显示面板的亮度不均问题。
 技术解决方案
为实现上述目的，本发明提供了一种OLED器件的制作方法，包括以下步骤：
步骤S1、提供衬底基板，在衬底基板上形成相间隔的阳极层和阴极接触层；
步骤S2、在衬底基板、阳极层及阴极接触层上形成像素定义层，所述像素定义层在所述阳极层上围出像素开口并在所述阴极接触层上方对应设有阴极接触孔；
步骤S3、在所述阳极层上由下至上依次形成空穴注入层、空穴传输层、发光层及电子传输层，所述电子传输层从所述像素开口内延伸到阴极接触孔内并与所述阴极接触层相接触；
步骤S4、在所述电子传输层上形成阴极层，所述阴极层覆盖阴极接触层，所述电子传输层将阴极层与阴极接触层间隔开；
步骤S5、对所述阳极层和阴极层施加相等电势的电压，同时对阴极接触层施加电势小于阴极层电势的电压，使阴极接触层和阴极层之间形成电势差，所述电子传输层在电场的作用下被击穿而导电，从而使所述阴极层和阴极接触层电导通。
进一步地，所述步骤S5中，所述阴极接触层和阴极层之间形成的电势差为10V-30V。
所述步骤S5中，保持所述阴极接触层和阴极层存在电势差的状态5分钟-30分钟。
进一步地，所述步骤S5中，对所述阳极层和阴极层施加的电压为10V-30V，对所述阴极接触层施加的电压为-20V-20V。
进一步地，所述步骤S3中，所述电子传输层由蒸镀材料通过蒸镀法制作形成。
进一步地，所述步骤S3中，所述空穴注入层、空穴传输层及发光层分别采用蒸镀法或喷墨打印法制作形成。
进一步地，所述阳极层和阴极接触层的材料为亲水性的导电材料，所述像素定义层的材料为疏水性材料。
进一步地，所述步骤S3中，所述空穴注入层、空穴传输层及发光层形成于所述像素开口内。
进一步地，所述阴极接触层通过像素定义层同时与阳极层、空穴注入层、空穴传输层、发光层分离。
进一步地，所述步骤S1中，所述阳极层和阴极接触层之间相隔10μm-20μm。
 有益效果
本发明提供的一种OLED器件的制作方法，在衬底基板上设置与阳极层相间隔的阴极接触层，在像素定义层上对应于阴极接触层的上方设置阴极接触孔，制作过程中电子传输层从像素开口内延伸到阴极接触孔内而将阴极层与阴极接触层间隔开，在器件正常工作之前，为了使阴极接触层与阴极层之间电导通，对阴极层和阳极层施加相等电势的正电压，同时对阴极接触层施加一个小于阴极层电势的电压，使阴极接触层和阴极层之间形成电势差，电子传输层在电场的作用下被击穿而导电，从而实现阴极层和阴极接触层的电导通，OLED器件在工作时，阴极接触孔层可以直接对阴极层提供电压电流补偿，进而能够防止OLED显示面板大面积出现IR Drop而导致的亮度不均问题。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
 附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
图1为本发明的OLED器件的制作方法的流程图；
图2为本发明的OLED器件的制作方法的步骤1的示意图；
图3为本发明的OLED器件的制作方法的步骤2的示意图；
图4为本发明的OLED器件的制作方法的步骤3的示意图；
图5为本发明的OLED器件的制作方法的步骤4的示意图；
图6为本发明的OLED器件的制作方法的步骤5的示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种OLED器件的制作方法，包括以下步骤：
步骤S1、如图2所示，提供衬底基板10，在衬底基板10上形成相间隔的阳极层21和阴极接触层30。
具体地，所述衬底基板10为玻璃基板。
具体地，所述步骤S1中，所述阳极层21和阴极接触层30之间相隔10μm-20μm，且相互没有连接。
具体地，所述阳极层21和阴极接触层30的材料为亲水性的导电材料。
步骤S2、如图3所示，在衬底基板10、阳极层21及阴极接触层30上形成像素定义层40，所述像素定义层40在所述阳极层21上围出像素开口41并在所述阴极接触层30上方对应设有阴极接触孔45。
具体地，所述像素定义层40的材料为疏水性材料。
具体地，所述阴极接触层30通过像素定义层40与阳极层21分离。
步骤S3、如图4所示，在所述阳极层21上由下至上依次形成空穴注入层（Hole Inject Layer，HIL）24、空穴传输层（Hole Transport Layer，HTL）25、发光层（Emitting layer，EML）26及电子传输层（Electron Transport Layer，ETL）27，所述电子传输层27从所述像素开口41内延伸到阴极接触孔45内并与所述阴极接触层30相接触。
具体地，所述步骤S3中，所述电子传输层27由蒸镀材料通过蒸镀法制作形成。需要说明的是，在实际应用蒸镀法制作OLED时，由于技术上无法实现独立的电子传输层27的制备，所以阴极接触层30后续无法直接与阴极层23相连，阴极接触孔层30无法实现工作。
具体地，所述电子传输层27设置在阳极层21和阴极接触层30上方，并且不受像素定义层40的分离，位于像素开口41内的电子传输层27与位于阴极接触孔45内的电子传输层27在像素定义层40上相连。
具体地，所述步骤S3中，所述空穴注入层24、空穴传输层25及发光层26形成于所述像素开口41内；所述像素定义层40同时将阴极接触层30与空穴注入层24、空穴传输层25、发光层26分离。
具体地，所述步骤S3中，所述空穴注入层24、空穴传输层25及发光层26分别采用蒸镀法或喷墨打印法（Ink-jet Print，IJP）制作形成。
步骤S4、如图5所示，在所述电子传输层27上形成阴极层23，所述阴极层23覆盖阴极接触层30，所述电子传输层27将阴极层23与阴极接触层30间隔开。
具体地，所述阴极层23高于像素定义层40并且不受像素定义层40的分离，位于像素开口41上方和阴极接触孔45上方的阴极层23在像素定义层40上方相连，为整面结构。
步骤S5、如图6所示，对所述阳极层21和阴极层23施加相等电势的范围在10V-30V之间的电压，同时对阴极接触层30施加电势小于阴极层23电势的范围在-20V-20V的电压，使阴极接触层30和阴极层23之间形成一个10V-30V的电势差并保持5分钟-30分钟，所述电子传输层27在电场的作用下被击穿而导电，从而使所述阴极层23和阴极接触层30电导通。
本发明的OLED器件的制作方法通过在衬底基板10上设置与阳极层21相间隔的阴极接触层30，在像素定义层40上对应于阴极接触层30的上方设置阴极接触孔45，制作过程中电子传输层27从像素开口41内延伸到阴极接触孔45内而将阴极层23与阴极接触层30间隔开，在器件正常工作之前，为了使阴极接触层30与阴极层23之间电导通，对阴极层23和阳极层21施加相等电势的正电压，同时对阴极接触层30施加一个小于阴极层23电势的负电压，使阴极接触层30和阴极层之间形成电势差，电子传输层27在电场的作用下被击穿而导电，从而实现阴极层23和阴极接触层30的电导通，从而所制作的OLED器件应用于OLED显示面板且在工作时，阳极层21上施加正电压，阴极层23和阴极接触孔层30上分别施加相同的负电压，阴极接触孔层30可以直接对阴极层23提供电压电流补偿，由于每个像素的OLED器件上均设有阴极接触层30与阴极层23电导通，进而能够防止OLED显示面板大面积出现IR Drop而导致的亮度不均问题。
综上所述，本发明提供的一种OLED器件的制作方法，在衬底基板上设置与阳极层相间隔的阴极接触层，在像素定义层上对应于阴极接触层的上方设置阴极接触孔，制作过程中电子传输层从像素开口内延伸到阴极接触孔内而将阴极层与阴极接触层间隔开，在器件正常工作之前，为了使阴极接触层与阴极层之间电导通，对阴极层和阳极层施加相等电势的正电压，同时对阴极接触层施加一个小于阴极层电势的电压，使阴极接触层和阴极层之间形成电势差，电子传输层在电场的作用下被击穿而导电，从而实现阴极层和阴极接触层的电导通，OLED器件在工作时，阴极接触孔层可以直接对阴极层提供电压电流补偿，进而能够防止OLED显示面板大面积出现IR Drop而导致的亮度不均问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种OLED器件的制作方法，其包括以下步骤：
    步骤S1、提供衬底基板，在衬底基板上形成相间隔的阳极层和阴极接触层；
    步骤S2、在衬底基板、阳极层及阴极接触层上形成像素定义层，所述像素定义层在所述阳极层上围出像素开口并在所述阴极接触层上方对应设有阴极接触孔；
    步骤S3、在所述阳极层上由下至上依次形成空穴注入层、空穴传输层、发光层及电子传输层，所述电子传输层从所述像素开口内延伸到阴极接触孔内并与所述阴极接触层相接触，其中所述电子传输层由蒸镀材料通过蒸镀法制作形成，所述空穴注入层、空穴传输层及发光层分别采用蒸镀法或喷墨打印法制作形成；
    步骤S4、在所述电子传输层上形成阴极层，所述阴极层覆盖阴极接触层，所述电子传输层将阴极层与阴极接触层间隔开；
    步骤S5、对所述阳极层和阴极层施加相等电势的电压，同时对阴极接触层施加电势小于阴极层电势的电压，使阴极接触层和阴极层之间形成电势差，所述电子传输层在电场的作用下被击穿而导电，从而使所述阴极层和阴极接触层电导通。
  2. 如权利要求1所述的OLED器件的制作方法，其中，所述步骤S5中，所述阴极接触层和阴极层之间形成的电势差为10V-30V。
  3. 如权利要求2所述的OLED器件的制作方法，其中，所述步骤S5中，保持所述阴极接触层和阴极层存在电势差的状态5分钟-30分钟。
  4. 如权利要求2所述的OLED器件的制作方法，其中，所述步骤S5中，对所述阳极层和阴极层施加的电压为10V-30V，对所述阴极接触层施加的电压为-20V-20V。
  5. 如权利要求1所述的OLED器件的制作方法，其中，所述步骤S3中，所述电子传输层由蒸镀材料通过蒸镀法制作形成。
  6. 一种OLED器件的制作方法，其包括以下步骤：
    步骤S1、提供衬底基板，在衬底基板上形成相间隔的阳极层和阴极接触层；
    步骤S2、在衬底基板、阳极层及阴极接触层上形成像素定义层，所述像素定义层在所述阳极层上围出像素开口并在所述阴极接触层上方对应设有阴极接触孔；
    步骤S3、在所述阳极层上由下至上依次形成空穴注入层、空穴传输层、发光层及电子传输层，所述电子传输层从所述像素开口内延伸到阴极接触孔内并与所述阴极接触层相接触；
    步骤S4、在所述电子传输层上形成阴极层，所述阴极层覆盖阴极接触层，所述电子传输层将阴极层与阴极接触层间隔开；
    步骤S5、对所述阳极层和阴极层施加相等电势的电压，同时对阴极接触层施加电势小于阴极层电势的电压，使阴极接触层和阴极层之间形成电势差，所述电子传输层在电场的作用下被击穿而导电，从而使所述阴极层和阴极接触层电导通。
  7. 如权利要求6所述的OLED器件的制作方法，其中，所述步骤S5中，所述阴极接触层和阴极层之间形成的电势差为10V-30V。
  8. 如权利要求7所述的OLED器件的制作方法，其中，所述步骤S5中，保持所述阴极接触层和阴极层存在电势差的状态5分钟-30分钟。
  9. 如权利要求7所述的OLED器件的制作方法，其中，所述步骤S5中，对所述阳极层和阴极层施加的电压为10V-30V，对所述阴极接触层施加的电压为-20V-20V。
  10. 如权利要求6所述的OLED器件的制作方法，其中，所述步骤S3中，所述电子传输层由蒸镀材料通过蒸镀法制作形成。
  11. 如权利要求6所述的OLED器件的制作方法，其中，所述步骤S3中，所述空穴注入层、空穴传输层及发光层分别采用蒸镀法或喷墨打印法制作形成。
  12. 如权利要求6所述的OLED器件的制作方法，其中，所述阳极层和阴极接触层的材料为亲水性的导电材料，所述像素定义层的材料为疏水性材料。
  13. 如权利要求6所述的OLED器件的制作方法，其中，所述步骤S3中，所述空穴注入层、空穴传输层及发光层形成于所述像素开口内。
  14. 如权利要求6所述的OLED器件的制作方法，其中，所述阴极接触层通过像素定义层同时与阳极层、空穴注入层、空穴传输层、发光层分离。
  15. 如权利要求6所述的OLED器件的制作方法，其中，所述步骤S1中，所述阳极层和阴极接触层之间相隔10μm-20μm。
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