WO2020211874A1 - 发光二极管器件以及发光装置 - Google Patents

发光二极管器件以及发光装置 Download PDF

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Publication number
WO2020211874A1
WO2020211874A1 PCT/CN2020/089157 CN2020089157W WO2020211874A1 WO 2020211874 A1 WO2020211874 A1 WO 2020211874A1 CN 2020089157 W CN2020089157 W CN 2020089157W WO 2020211874 A1 WO2020211874 A1 WO 2020211874A1
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WO
WIPO (PCT)
Prior art keywords
light
layer
waterproof layer
emitting diode
diode device
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Application number
PCT/CN2020/089157
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English (en)
French (fr)
Inventor
陈磊
蔡济隆
林金填
周少翔
Original Assignee
旭宇光电（深圳）股份有限公司
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Publication of WO2020211874A1 publication Critical patent/WO2020211874A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present invention relates to the technical field of light emitting diodes, in particular to a light emitting diode device and a light emitting device.
  • LED Light Emitting Diode
  • LED has the advantages of high efficiency, energy saving, environmental protection, long life, small size, easy maintenance, etc., and has attracted wide attention from domestic and foreign researchers.
  • Existing light-emitting diodes, such as white light LED devices are mainly realized by blue or purple chip excitation phosphors, and the phosphors used in the lighting field mostly use broadband-emitting aluminate green powder and nitride red powder. The external quantum of the phosphor
  • the efficiency development is gradually restricted. At present, the industry usually uses large-size chips for low power to improve the light efficiency of white light LED devices, but the manufacturing cost is too high.
  • Mn 4+ doped K 2 SiF 6 structured fluoride red powder has attracted wide attention in the industry due to its high light efficiency and narrowband emission.
  • Using this structure phosphor to replace nitride red powder can greatly improve the light efficiency of white light LED devices.
  • the poor moisture resistance of the phosphor leads to poor stability of the white light LED device. Therefore, the stability of the current application of white light LED device lighting still needs to be solved.
  • One of the objectives of the present invention is to provide a light emitting diode device, which has excellent waterproof performance, can protect the fluorescent glue layer from moisture during long-term use, and can greatly improve the light efficiency and stability of the light emitting diode device.
  • the second object of the present invention is to provide a light emitting device, which has good stability and high light efficiency during long-term use.
  • a light-emitting diode device includes: a bracket provided with a groove and a through hole provided on the bracket; a waterproof layer provided in the through hole; at least one LED chip, the At least one LED chip is fixed on the bracket; a fluorescent glue layer is filled in the groove and covers the at least one LED chip and the waterproof layer; a water-absorbing layer, the water-absorbing layer is arranged in the through hole And the water absorption layer is arranged on the surface of the waterproof layer away from the fluorescent glue layer.
  • the waterproof layer includes a first waterproof layer and a second waterproof layer, and the second waterproof layer is disposed between the first waterproof layer and the water-absorbing layer;
  • the material of the first waterproof layer and the second waterproof layer independently includes at least one of epoxy resin, silicone resin, alumina, and resin containing silica;
  • the material of one of the first waterproof layer and the second waterproof layer includes alumina
  • the material of the other of the first waterproof layer and the second waterproof layer includes epoxy resin, organic At least one of silicone resin and silicon dioxide-containing resin;
  • the silicone resin includes methyl silicone resin.
  • the anti-vulcanization layer is arranged on the surface of the fluorescent glue layer away from the waterproof layer;
  • the ratio of the refractive index of the fluorescent adhesive layer to the anti-vulcanization layer is (1.5-1.7): (1.8-2.1), preferably (1.6-1.7): (1.9-2.1), more preferably ( 1.65-1.7): (2.0-2.1);
  • the raw material for forming the anti-vulcanization layer includes a resin containing silicon dioxide, preferably a silicone resin containing nano silicon dioxide;
  • the particle size of the silica is 5-50nm, preferably 5-10nm.
  • the bracket includes a side wall and a bottom wall, the side wall and the bottom wall define the groove, and the through hole is provided on the bottom wall;
  • the side wall includes a vertical section and an inclined section, and the inclined section connects the vertical section and the bottom wall.
  • the inclined section gradually moves away from the groove, and the vertical
  • the angle between the section and the inclined section is 120°-150°, preferably 120°-130°;
  • the material of the bracket includes copper-plated silver
  • an aluminum oxide film is provided on the surface of the support away from the groove.
  • the LED chips are arranged on the bottom wall, and the number of the LED chips is at least two;
  • the LED chip includes a blue light chip and/or a purple light chip
  • the number of the LED chips is two, including two blue light chips or two violet light chips arranged at intervals or one blue light chip and one violet light chip arranged at intervals;
  • a bonding layer is provided between the LED chip and the support.
  • the fluorescent glue layer includes fluoride red phosphor
  • the fluorescent glue layer further includes at least one of blue fluorescent powder, green fluorescent powder and yellow fluorescent powder;
  • the fluoride red phosphor includes a fluoride narrowband emission red phosphor
  • the fluoride narrowband red phosphor emitting the same structure as the structure of K 2 SiF 6, and preferably Mn 4+ doped K 2 SiF 6;
  • the fluorescent adhesive layer further includes a nitride red phosphor, and the weight ratio of the nitride red phosphor to the fluoride red phosphor is 1:(2-5), preferably 1:3 .
  • the ratio of the thickness of the anti-vulcanization layer, the fluorescent adhesive layer and the waterproof layer is (0.01-0.05):1:(0.1-0.2), preferably 0.02:1:0.15.
  • the ratio of the width of the waterproof layer to the width of the fluorescent glue layer is (1-2): 5, preferably 1.5:5.
  • a light-emitting device including the aforementioned light-emitting diode device
  • the light-emitting device includes a lamp, preferably at least one of a bulb lamp, a spot lamp, a panel lamp, a line lamp, and a projection lamp.
  • the present invention can at least achieve the following beneficial effects:
  • the moisture on the side of the support away from the groove can be absorbed. Because the space of the light-emitting diode device is limited, the After the moisture is absorbed into the water-absorbing layer, it can reduce the erosion of moisture on the surface of the bracket away from the groove, and reduce the probability of water entering the fluorescent glue layer from the bracket; moreover, the waterproof layer is arranged between the fluorescent glue layer and the water-absorbing layer to effectively prevent water Enter the fluorescent glue layer, thereby effectively reducing the probability of the fluorescent glue layer being damp, so that the light-emitting diode device has strong light efficiency and stability during long-term use; and the waterproof layer and the LED chip are covered by the fluorescent glue layer, which can improve the light-emitting diode The air tightness of the device.
  • FIG. 1 is a schematic structural diagram of a light emitting diode device in an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the structure of a light emitting diode device in another embodiment of the present invention.
  • FIG. 3 is a schematic diagram of the structure of a light emitting diode device in another embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the structure of the light emitting diode device in Comparative Example 1.
  • FIG. 4 is a schematic diagram of the structure of the light emitting diode device in Comparative Example 1.
  • Icon 10-bracket; 11-groove; 12-through hole; 13-side wall; 131-vertical section; 132-inclined section; 14-bottom wall; 20-waterproof layer; 30-LED chip; 31-bonding wire 32-Solid crystal layer; 40-Fluorescent adhesive layer; 50-Anti-sulfurization layer; 60-Packaging shell; 70-Water absorption layer; D1-Thickness of fluorescent adhesive layer; D2-Thickness of anti-sulfurization layer; D3-Waterproof layer thickness of.
  • the invention provides a light emitting diode device.
  • the light emitting diode includes: a bracket 10 provided with a groove 11, and a through hole 12 is provided on the bracket 10; a waterproof layer 20, the waterproof layer 20 is provided on the through hole 12 At least one LED chip 30, the at least one LED chip 30 is fixed on the bracket 10; a fluorescent glue layer 40, filled in the groove 11 and covers the at least one LED chip 30 and the waterproof layer 20; water absorption layer 70, the water absorption layer 70 is disposed in the through hole 12, and the water absorption layer 70 is disposed on the surface of the waterproof layer 20 away from the fluorescent glue layer 40.
  • the moisture on the side of the support away from the groove can be absorbed. Because the space of the light-emitting diode device is limited, the moisture After it is absorbed into the water-absorbing layer, it can reduce the erosion of moisture on the surface of the bracket away from the groove, and reduce the probability of water entering the fluorescent glue layer from the bracket; moreover, the waterproof layer is arranged between the fluorescent glue layer and the water-absorbing layer, which can effectively prevent water Enter the fluorescent glue layer, thereby effectively reducing the probability of the fluorescent glue layer being damp, so that the light-emitting diode device has strong light efficiency and stability during long-term use; and the waterproof layer and the LED chip are covered by the fluorescent glue layer, which can improve the light-emitting diode The air tightness of the device.
  • the waterproof layer includes a first waterproof layer and a second waterproof layer, and the second waterproof layer is disposed between the first waterproof layer and the water-absorbing layer. Therefore, the waterproof effect of the waterproof layer is better.
  • the materials of the first waterproof layer and the second waterproof layer independently include epoxy resin (preferably including modified epoxy resin), silicone resin (preferably including modified organic At least one of silicone resin), alumina, and silica-containing resin.
  • the material of one of the first waterproof layer and the second waterproof layer includes alumina, and the other of the first waterproof layer and the second waterproof layer is made of aluminum oxide.
  • the material includes at least one of epoxy resin, silicone resin, and resin containing silica. Therefore, the waterproof effect of the waterproof layer provided with the above-mentioned material is better.
  • the silicone resin includes a modified methyl silicone resin
  • the modified epoxy resin includes an epoxy resin modified with graphene (wherein, the mass percentage of graphene can be 1- 3%).
  • the waterproof layer has a good waterproof effect, and the probability of damp of the fluorescent adhesive layer is significantly reduced, so that the light emitting diode device can maintain high light efficiency during long-term use.
  • the material of the water-absorbing layer includes but is not limited to at least one of polyacrylic resin, polyacrylonitrile resin, polyvinyl alcohol resin, and polyethylene oxide resin.
  • the fluorescent glue layer includes fluoride red fluorescent powder.
  • the fluorescent glue layer also includes blue fluorescent powder (for example, including but not limited to BaMgAl 11 O 17 :Eu, AlN:Eu, Sr 5 (PO 4 ) 3 Cl:Eu), green phosphor (for example, it may include but not limited to BaSi 2 O 2 N 2 :Eu 2+ , ⁇ -SiAlON: Eu 2 + , Y 3 (Al,Ga) 5 O 11 : Ce 3+ , Lu 3 Al 5 O 12 : Ce 3+ ) and yellow phosphors (including but not limited to Y 3 Al 5 O 11 : Ce 3+ , La 3 Si 6 N 11 : Ce 3+ , ⁇ -SiAlON: Eu 2+ ) at least one kind. Therefore, the fluoride red phosphor has good performance and high luminous efficiency, and its mixed use with blue phosphor, green phosphor and/or yellow
  • the fluoride red phosphor includes a fluoride narrowband emission red phosphor.
  • the structure of the fluoride narrow-band emission red phosphor is the same as the structure of K 2 SiF 6 , preferably Mn 4+ doped K 2 SiF 6 (for example, including but not limited to K 2 Si 0.9 F 6 : 0.1Mn).
  • the red phosphor has high external quantum efficiency and high light efficiency. It cooperates with the structure of the above-mentioned bracket and waterproof layer, so that the light emitting diode device can maintain high light efficiency during long-term use, and the probability of moisture exposure is low. , Strong stability.
  • the fluorescent glue layer further includes a red nitride phosphor (for example, including but not limited to Ca 0.932 Sr 0.063 AlSiN 3 : 0.005Eu 2+ ), and the red nitride phosphor
  • the weight ratio to the fluoride red phosphor is 1:(2-5).
  • the weight ratio of the nitride red phosphor to the fluoride red phosphor can be 1:2, 1:2.5, 1:3, 1. : 3.5, 1:4, 1:4.5 or 1:5, etc. Therefore, the light-emitting diode device has high luminous efficiency, good spectral continuity, and high reliability.
  • the weight ratio of the red nitride phosphor and the above-mentioned fluoride red phosphor is too high, the light efficiency of the light-emitting diode device is relatively low.
  • the powder weight ratio is too low, the light-emitting diode device has relatively poor spectral continuity and relatively low reliability.
  • the weight ratio of the nitride red phosphor to the fluoride red phosphor is 1:3.
  • the fluorescent glue layer further includes fluorescent glue
  • the material for forming the fluorescent glue includes any one or two of epoxy resin glue or silicone resin glue.
  • the fluorescent glue is mixed with the above-mentioned fluorescent powder to form The performance of the fluorescent adhesive layer can be relatively firmly filled in the groove, almost not damaged during transportation, which improves the product yield.
  • the ratio of the width W1 of the waterproof layer 20 to the width W2 of the fluorescent glue layer 40 is (1-2): 5, for example
  • the ratio of the width of the waterproof layer to the width of the fluorescent glue layer can be 1:5, 1.1:5, 1.2:5, 1.3:5, 1.4:5, 1.6:5, 1.6:5, 1.7:5, 1.8:5, 1.9:5 or 2:5, etc., preferably 1.5:5. Therefore, after the above-mentioned waterproof layer is provided in the through hole and the above-mentioned fluorescent glue layer is filled in the groove, almost all the light reflected from the waterproof layer can enter the fluorescent glue layer, which is beneficial to improve the light extraction efficiency.
  • the ratio of the width of the waterproof layer to the width of the fluorescent glue layer is too small, it is not conducive to improving the light extraction efficiency.
  • the width of the bottom wall is too small, which is not conducive to packaging and affects the light extraction efficiency.
  • the light emitting diode device further includes an anti-sulfurization layer 50, and the anti-sulfurization layer 50 is disposed on the surface of the fluorescent glue layer 40 away from the waterproof layer 20. Therefore, sulfur element can be effectively prevented from entering the groove, thereby protecting the light emission of the LED light-emitting device from being affected, and improving the reliability of the product.
  • the ratio of the refractive index of the fluorescent adhesive layer to the anti-sulfurization layer is (1.5-1.7): (1.8-2.1), for example, (1.5/1.6/1.7): ( 1.8/1.9/2.0/2.1), preferably (1.6-1.7): (1.9-2.1), more preferably (1.65-1.7): (2.0-2.1). Therefore, it is beneficial to improve the light extraction efficiency.
  • the raw material for forming the anti-vulcanization layer includes a resin containing silica, preferably a silicone resin containing nano-silica. Therefore, the anti-sulfurization layer has a good anti-sulfurization effect, and the addition of silicon dioxide is beneficial to increase the refractive index of the anti-sulfurization layer, and further improves the light extraction efficiency of the light emitting diode device.
  • the particle size of silica is 5-50nm (for example, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm, etc.), thereby preventing vulcanization
  • the refractive index of the layer is appropriate, which is beneficial to improve the light extraction efficiency.
  • the particle size of silica is 5-10 nm.
  • the ratio of the thickness D2 of the anti-vulcanization layer, the thickness D1 of the fluorescent glue layer, and the thickness D3 of the waterproof layer is (0.01-0.05):1: (0.1-0.2), for example, it can be (0.01/0.02/0.03/0.04/0.05): 1: (0.1/0.12/0.14/0.06/0.18/0.2). Therefore, the light-emitting diode device has good airtightness, good waterproof and gas-proof effects, high light extraction efficiency, and strong reliability.
  • the sealing effect of the light-emitting diode device is relatively poor, and the gas-proof and waterproof effect is relatively poor;
  • the thickness of the anti-sulfurization layer is compared with the thickness of the fluorescent glue layer
  • the ratio is too high, it will increase the reflection loss of the emitted light and reduce the light output efficiency;
  • the thickness of the waterproof layer and the fluorescent glue layer is too large, the reflection loss of the emitted light will increase, resulting in a decrease in the light output rate. If the thickness of the fluorescent glue layer is too small, the air tightness of the stent is relatively poor.
  • the ratio of the thickness of the anti-vulcanization layer, the fluorescent glue layer and the waterproof layer is 0.02:1:0.15.
  • the bracket 10 includes a side wall 13 and a bottom wall 14, the side wall 13 and the bottom wall 14 define the groove 11, and the through hole 12 Set on the bottom wall 14.
  • the shape of the through hole can be a regular or irregular shape such as a square, a circle, a triangle, etc., and the number of through holes can also be flexibly selected according to actual conditions, which will not be repeated here.
  • the side wall 13 of the bracket 10 includes a vertical section 131 and an inclined section 132, and the inclined section 132 connects the vertical section 131 and the bottom wall 14 along the In the light emitting direction, the inclined section 132 is gradually away from the groove 11, and the included angle between the vertical section 131 and the inclined section 132 is 120°-150°, preferably 120°-130°.
  • the light emitted by the LED chip and the phosphor powder will be more reflected, and the light extraction efficiency of the light can be improved.
  • the material of the bracket includes copper-plated silver. Therefore, the material of the bracket is relatively dense, which is beneficial to improve the air tightness of the light emitting diode device, and can effectively prevent moisture from penetrating into the fluorescent glue layer from the bracket.
  • an aluminum oxide film is provided on the surface of the support away from the groove. As a result, it is possible to further prevent water vapor from penetrating into the fluorescent glue layer from the bracket.
  • the above-mentioned aluminum oxide film refers to a film with a thickness of 0.01-0.1 microns.
  • the LED chip is arranged on the bottom wall. Therefore, it is conducive to the emission of light, and the light efficiency is high.
  • the number of the LED chips is at least two.
  • the LED chips include blue light chips and/or purple light chips. As a result, the light efficiency is higher.
  • the number of the LED chips is two, including two blue light chips or two purple light chips arranged at intervals or one blue light chip and one purple light chip arranged at intervals. , LED light-emitting devices have higher light efficiency.
  • the peak wavelengths between the two LED chips may be the same or different (for example, one of the two LED chips is a blue chip (wavelength is between 440nm-480nm), and the other is a purple light. Chip (wavelength between 400nm-430nm)).
  • the fluorescent glue layer includes fluoride red fluorescent powder (for example, fluoride narrow-band emission red fluorescent powder, and its structure can be compatible with K 2 SiF 6 same), and at least one of green phosphors and yellow phosphors, and may also include other types of red phosphors (for example, nitride red phosphors, etc.).
  • the phosphor layer when dual violet light chips are used, the phosphor layer includes fluoride narrowband red phosphor (for example, fluoride narrowband red phosphor, whose structure may be the same as K 2 SiF 6 ), And at least two of blue phosphor, green phosphor, and yellow phosphor, and may also include other types of red phosphor (for example, nitride red phosphor, etc.).
  • fluoride narrowband red phosphor for example, fluoride narrowband red phosphor, whose structure may be the same as K 2 SiF 6
  • blue phosphor, green phosphor, and yellow phosphor at least two of blue phosphor, green phosphor, and yellow phosphor, and may also include other types of red phosphor (for example, nitride red phosphor, etc.).
  • the light-emitting diode when the two LED chips are both blue chips, and the fluorescent glue layer includes aluminate green phosphor, nitride red phosphor and fluoride narrowband red phosphor, the light-emitting diode
  • the fluorescent glue layer includes aluminate green phosphor, nitride red phosphor and fluoride narrowband red phosphor
  • a bonding layer 32 is provided between the LED chip 30 and the support 10. As a result, the LED chip can be more firmly fixed on the bracket.
  • the material forming the solid crystal layer includes metal (for example, at least one of copper, iron, aluminum, etc.) and the like.
  • the light emitting diode device is prepared by the following method:
  • a package housing 60 is provided on the outside of the bracket.
  • the housing can effectively protect the light-emitting diode device.
  • the light-emitting diode device further includes 30 solder wire 31 for electrical connection. It is understandable that after the light emitting diode device is packaged, air and/or water vapor will penetrate between the bracket and the packaging shell, and the structure of the light emitting diode device of the present invention can effectively prevent air and water vapor from entering the fluorescent glue layer. Therefore, the reliability of the light-emitting diode device is significantly improved, so that it can maintain high light efficiency during long-term use.
  • the description of the "bottom wall” in this text is only for the convenience of describing the structure of the support , Cannot be understood as a limitation of the present application. Specifically, the bottom wall is set in the opposite direction of the light emitting direction.
  • the present invention provides a light emitting device, which includes the aforementioned light emitting diode device. Therefore, the light-emitting device has strong stability, good spectral continuity, and can maintain strong light intensity during long-term use.
  • the light-emitting device may also include a conventional packaging structure, a switch, a housing, and/or a power supply, which will not be repeated here.
  • a packaging structure is provided on the outside of the support of the light-emitting diode device, and the gap between the packaging structure and the support is extremely small or there is no gap, which can enter the moisture between the packaging structure and the support. The amount is very small.
  • the water-absorbing layer can reduce the probability of water entering the fluorescent glue layer from the bracket after the water-absorbing layer absorbs water, and the water-absorbing layer can exert water absorption for a long time, thereby effectively ensuring that the light-emitting diode device has a long service life;
  • the waterproof layer has a better waterproof effect, which can effectively prevent water from entering the fluorescent glue layer from the waterproof layer, and effectively prolong the service life of the light emitting diode device.
  • the light-emitting device includes a lamp, preferably including at least one of a bulb lamp, a spot lamp, a panel lamp, a line lamp, and a spot lamp. Therefore, light-emitting diodes have wide application scenarios.
  • the aging time is 1000h at a temperature of 85°C and a humidity of 85%.
  • the structure of the light-emitting diode device is shown in Figure 2, including a bracket 10 provided with a groove 11, a waterproof layer 20, a water-absorbing layer 70, a fluorescent glue layer 40, an anti-sulfurization layer 50 and two blue LED chips 30 arranged at intervals.
  • 10 includes a bottom wall 14 and a side wall 13.
  • the side wall 13 has a vertical section 131 and an inclined section 132.
  • the angle between the vertical section 131 and the inclined section 132 is 120°.
  • the thickness D2 of the anti-vulcanization layer 50 is equal to that of the vertical section 131.
  • the height is the same, the thickness D1 of the fluorescent glue layer 40 is the same as the height of the inclined section 132, the bottom wall is provided with a through hole 12, and the through hole 12 is provided with a waterproof layer formed of methyl silicone resin, wherein the width of the waterproof layer ( The ratio of the width of the through hole) to the width of the fluorescent glue layer (that is, the width of the groove) is 1:5, and the ratio of the thickness of the anti-vulcanization layer, the fluorescent glue layer and the waterproof layer is 0.01:1:0.1, forming the bracket
  • the material is copper-plated silver
  • the anti-sulfurization layer is made of silicone resin compounded with nano-silica
  • the material forming the water-absorbing layer includes polyacrylic resin
  • the fluorescent adhesive layer includes: alumina green phosphor: Lu 2.95 Al 5 O 12 : 0.05Ce 3+ , nitride red phosphor Ca 0.932 Sr 0.063 AlSiN 3 : 0.005Eu 2+ , fluoride red
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the weight ratio of the nitride red phosphor and the fluoride red phosphor is 1:3.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the weight ratio of the nitride red phosphor and the fluoride red phosphor is 1:4, and its light and color properties are shown in Table 1.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the weight ratio of the nitride red phosphor and the fluoride red phosphor is 1:5.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the weight ratio of the nitride red phosphor and the fluoride red phosphor is 1:1.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the weight ratio of the nitride red phosphor and the fluoride red phosphor is 1:6.
  • the structure of the light emitting diode device is the same as that of Embodiment 1, except that the ratio of the thickness of the anti-sulfurization layer, the fluorescent adhesive layer and the waterproof layer is 0.05:1:0.2.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the ratio of the thickness of the anti-sulfurization layer, the fluorescent adhesive layer and the waterproof layer is 0.03:1:0.15.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the ratio of the thickness of the anti-sulfurization layer, the fluorescent adhesive layer and the waterproof layer is 0.05:1:0.4.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the ratio of the thickness of the anti-sulfurization layer, the fluorescent adhesive layer and the waterproof layer is 0.005:1:0.05.
  • the structure of the light emitting diode device is the same as that of Embodiment 1, except that the angle between the vertical section and the inclined section is 130°.
  • the structure of the light emitting diode device is the same as that of Embodiment 1, except that the angle between the vertical section and the inclined section is 150°.
  • the structure of the light emitting diode device is the same as that of Embodiment 1, except that the angle between the vertical section and the inclined section is 100°.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the angle between the vertical section and the inclined section is 160°.
  • the structure of the light emitting diode device is the same as that of Embodiment 1, except that the angle between the vertical section and the inclined section is 90°.
  • the structure of the light emitting diode device is the same as that of Embodiment 1, except that the ratio of the width of the waterproof layer to the width of the fluorescent glue layer is 2:5.
  • the structure of the light emitting diode device is the same as that of Embodiment 1, except that the ratio of the width of the waterproof layer to the width of the fluorescent glue layer is 0.5:5.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that the ratio of the width of the waterproof layer to the width of the fluorescent glue layer is 3:5.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that an aluminum oxide film is provided on the surface of the support away from the groove.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, the difference is that the waterproof layer includes a first waterproof layer and a second waterproof layer.
  • the material of the first waterproof layer is alumina, and the material of the second waterproof layer is composited with nano-silica. Silicone resin.
  • FIG. 4 The schematic diagram of the structure of the light emitting diode device is shown in FIG. 4, two blue LED chips 30 with the same specifications as in Embodiment 1 are arranged at intervals on the bottom of the support 10, and a fluorescent glue layer 40 is arranged on the blue LED chip 30, and the fluorescent glue layer includes: Aluminate green phosphor: Lu 2.95 Al 5 O 12 :0.05Ce 3+ , Nitride red phosphor: Ca 0.932 Sr 0.063 AlSiN 3 :0.005Eu 2+ , Fluoride red phosphor: K 2 Si 0.9 F 6 :0.1 Mn.
  • aluminate green phosphor, nitride red phosphor and fluoride red phosphor are used for the preparation, wherein the weight ratio of nitride red phosphor and fluoride red phosphor is 1:5.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that there is no through hole on the bracket and no waterproof layer.
  • the structure of the light-emitting diode device is the same as that of Embodiment 1, except that it does not contain a water-absorbing layer.
  • Example 1 6500 90 140 3 Example 2 6500 90 145 3.5 Example 3 6500 90 151 4 Example 4 6500 90 158 5 Example 5 6500 90 120 3 Example 6 6500 90 165 8 Example 7 6500 90 135 2.2 Example 8 6500 90 138 2.6 Example 9 6500 90 115 2 Example 10 6500 90 142 3.5 Example 11 6500 90 137 3.1 Example 12 6500 90 133 4 Example 13 6500 90 135 3 Example 14 6500 90 125 5 Example 15 6500 90 130 4 Example 16 6500 90 135 4.2 Example 17 6500 90 141 6 Example 18 6500 90 123 4.5 Example 19 6500 90 140 1 Example 20 6500 90 140 0.5 Comparative example 1 6500 90 100 20 Comparative example 2 6500 90 90 90 25 Comparative example 3 6500 90 138 12

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Abstract

本申请提供了一种发光二极管器件以及发光装置，涉及发光二极管技术领域，该发光二极管器件包括：支架，所述支架设置有凹槽，且所述支架上设置有通孔；防水层，所述防水层设置在所述通孔中；至少一个LED芯片，所述至少一个LED芯片固定在所述支架上；荧光胶层，填充在所述凹槽内并覆盖所述至少一个LED芯片和所述防水层；吸水层，所述吸水层设置在所述通孔中，且所述吸水层设置在所述防水层远离所述荧光胶层的表面上。该发光二极管器件具有优异的防水性能，可以保护荧光胶层在长期使用过程中不受潮，进而可以大幅度提升发光二极管器件的光效和稳定性。

Description

发光二极管器件以及发光装置 技术领域
本发明涉及发光二极管技术领域，具体而言，涉及一种发光二极管器件以及发光装置。
 背景技术
发光二极管（Light Emitting Diode，LED）具有高效、节能、环保、寿命长、体积小、易维护等优点，受到国内外研究者广泛关注。现有发光二极管，例如白光LED器件的实现主要通过蓝光或紫光芯片激发荧光粉方式实现，且照明领域用荧光粉多采用宽带发射的铝酸盐绿粉和氮化物红粉，其荧光粉的外量子效率发展逐步受到限制。目前业界通常采用大尺寸芯片用于小功率来提升白光LED器件的光效，但制备成本过高。近年来，Mn 4+掺杂的K 2SiF 6结构的氟化物红粉由于具有高光效窄带发射受到业界广泛的关注，采用该结构荧光粉替代氮化物红粉，能够大幅度提升白光LED器件的光效，但是该荧光粉耐湿性差导致白光LED器件的稳定性差，因而，目前应用于白光LED器件照明的稳定性仍有待解决。
技术问题
本发明的目的之一在于提供一种发光二极管器件，其具有优异的防水性能，可以保护荧光胶层在长期使用过程中不受潮，进而可以大幅度提升发光二极管器件的光效和稳定性。
 技术解决方案
本发明的目的之二在于提供一种发光装置，该发光装置的稳定性好，在长期使用过程中均具有较高的光效。
为了实现本发明的上述目的，特采用以下技术方案：
一种发光二极管器件，包括：支架，所述支架设置有凹槽，且所述支架上设置有通孔；防水层，所述防水层设置在所述通孔中；至少一个LED芯片，所述至少一个LED芯片固定在所述支架上；荧光胶层，填充在所述凹槽内并覆盖所述至少一个LED芯片和所述防水层；吸水层，所述吸水层设置在所述通孔中，且所述吸水层设置在所述防水层远离所述荧光胶层的表面上。
进一步地，所述防水层包括第一防水层和第二防水层，所述第二防水层设置在所述第一防水层与所述吸水层之间；
优选地，所述第一防水层和所述第二防水层的材质各自独立地包括环氧树脂、有机硅树脂、氧化铝以及含有二氧化硅的树脂中的至少一种；
优选地，所述第一防水层和所述第二防水层中的一个的材质包括氧化铝，所述第一防水层和所述第二防水层中的另一个的材质包括环氧树脂、有机硅树脂以及含有二氧化硅的树脂中的至少一种；
优选地，所述有机硅树脂包括甲基硅树脂。
进一步地，还包括防硫化层，所述防硫化层设置在所述荧光胶层远离所述防水层的表面上；
优选地，所述荧光胶层与所述防硫化层的折射率的比值为（1.5-1.7）：（1.8-2.1），优选为（1.6-1.7）：（1.9-2.1），进一步优选为（1.65-1.7）：（2.0-2.1）；
优选地，形成所述防硫化层的原料包括含有二氧化硅的树脂，优选为含有纳米二氧化硅的有机硅树脂；
优选地，所述二氧化硅的粒径为5-50nm，优选为5-10nm。
进一步地，所述支架包括侧壁和底壁，所述侧壁和所述底壁限定出所述凹槽，所述通孔设置在所述底壁上；
优选地，所述侧壁包括垂直段和倾斜段，所述倾斜段连接所述垂直段和所述底壁，在沿出光方向上，所述倾斜段逐渐远离所述凹槽，且所述垂直段与所述倾斜段之间的夹角为120°-150°，优选为120°-130°；
优选地，所述支架的材质包括铜镀银；
优选地，在所述支架远离所述凹槽的表面上设置有氧化铝薄膜。
进一步地，所述LED芯片设置在所述底壁上，且所述LED芯片的数量至少为两个；
优选地，所述LED芯片包括蓝光芯片和/或紫光芯片；
优选地，所述LED芯片的数量为两个，包括间隔设置的两个蓝光芯片或间隔设置的两个紫光芯片或间隔设置的一个蓝光芯片和一个紫光芯片；
优选地，所述LED芯片与所述支架之间设置有固晶层。
进一步地，所述荧光胶层中包括氟化物红色荧光粉；
优选地，所述荧光胶层中还包括蓝色荧光粉、绿色荧光粉和黄色荧光粉中的至少一种；
优选地，所述氟化物红色荧光粉包括氟化物窄带发射红色荧光粉；
优选地，所述氟化物窄带发射红色荧光粉的结构与K 2SiF 6的结构相同，优选为Mn 4+掺杂的K 2SiF 6；
优选地，所述荧光胶层中还包括氮化物红色荧光粉，且所述氮化物红色荧光粉与所述氟化物红色荧光粉的重量比为1：（2-5），优选为1:3。
进一步地，所述防硫化层、所述荧光胶层以及所述防水层的厚度之比为（0.01-0.05）：1：（0.1-0.2），优选为0.02:1:0.15。
进一步地，所述防水层的宽度与所述荧光胶层的宽度的比值为（1-2）：5，优选为1.5:5。
一种发光装置，包括前面所述的发光二极管器件；
进一步地，所述发光装置包括灯具，优选包括球泡灯、射灯、面板灯、线条灯和投光灯中的至少一种。
 有益效果
与现有技术相比，本发明至少可以取得以下有益效果：
本申请的发光二极管器件中，在支架上设置通孔并在该通孔中设置吸水层之后，可以吸收支架远离凹槽一侧的水分，由于发光二极管器件的空间中可以容纳的水分有限，将水分吸收至吸水层之后可以减少水分对支架远离凹槽的表面的侵蚀，降低水分从支架进入荧光胶层中的几率；而且，防水层设置在荧光胶层与吸水层之间，可以有效防止水进入荧光胶层，从而有效降低荧光胶层受潮的几率，使得发光二极管器件在长期使用过程中具有较强的光效和稳定性；且防水层和LED芯片被荧光胶层覆盖，可以提升发光二极管器件的气密性。
 附图说明
为了更清楚地说明发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一个实施方式中的发光二极管器件的结构示意图；
图2为本发明另一个实施方式中的发光二极管器件的结构示意图；
图3为本发明另一个实施方式中的发光二极管器件的结构示意图；
图4为对比例1中的发光二极管器件的结构示意图。
图标：10-支架；11-凹槽；12-通孔；13-侧壁；131-垂直段；132-倾斜段；14-底壁；20-防水层；30-LED芯片；31-焊线；32-固晶层；40-荧光胶层；50-防硫化层；60-封装壳体；70-吸水层；D1-荧光胶层的厚度；D2-防硫化层的厚度；D3-防水层的厚度。
 本发明的实施方式
下面将结合实施例对本发明的实施方案进行详细描述，但是本领域技术人员将会理解，下列实施例仅用于说明本发明，而不应视为限制本发明的范围。实施例中未注明具体条件者，按照常规条件或制造商建议的条件进行。
本发明中，如果没有特别的说明，本文所提到的所有实施方式以及优选实施方法可以相互组合形成新的技术方案。
本发明中，如果没有特别的说明，本文所提到的所有技术特征以及优选特征可以相互组合形成新的技术方案。
在本发明的一个方面，本发明提供了一种发光二极管器件。参照图1，该发光二极管包括：支架10，所述支架10设置有凹槽11，且所述支架10上设置有通孔12；防水层20，所述防水层20设置在所述通孔12中；至少一个LED芯片30，所述至少一个LED芯片30固定在所述支架10上；荧光胶层40，填充在所述凹槽11内并覆盖所述至少一个LED芯片30和所述防水层20；吸水层70，所述吸水层70设置在所述通孔12中，且所述吸水层70设置在所述防水层20远离所述荧光胶层40的表面上。
本申请的发光二极管器件中，在支架上设置通孔并在该通孔中设置吸水层之后，可以吸收支架远离凹槽一侧的水分，由于发光二极管器件的空间中可以容纳的水分有限，将其吸收至吸水层之后可以减少水分对支架远离凹槽的表面的侵蚀，降低水分从支架进入荧光胶层中的几率；而且，防水层设置在荧光胶层与吸水层之间，可以有效防止水进入荧光胶层，从而有效降低荧光胶层受潮的几率，使得发光二极管器件在长期使用过程中具有较强的光效和稳定性；且防水层和LED芯片被荧光胶层覆盖，可以提升发光二极管器件的气密性。
在本发明的一些实施方式中，所述防水层包括第一防水层和第二防水层，所述第二防水层设置在所述第一防水层与所述吸水层之间。由此，防水层的防水效果更佳。
在本发明的一些实施方式中，所述第一防水层和所述第二防水层的材质各自独立地包括环氧树脂（优选包括改性环氧树脂）、有机硅树脂（优选包括改性有机硅树脂）、氧化铝以及含有二氧化硅的树脂中的至少一种。
在本发明的一些优选实施方式中，所述第一防水层和所述第二防水层中的一个的材质包括氧化铝，所述第一防水层和所述第二防水层中的另一个的材质包括环氧树脂、有机硅树脂以及含有二氧化硅的树脂中的至少一种。由此，具备上述材质的防水层的防水效果更佳。
在本发明的一些具体实施方式中，所述有机硅树脂包括改性甲基硅树脂，改性环氧树脂包括利用石墨烯改性的环氧树脂（其中，石墨烯的质量百分比可以为1-3%）。由此，防水层的防水效果好，显著降低荧光胶层的受潮几率，使得发光二极管器件在长期使用过程中均能保持较高的光效。
在本发明的一些实施方式中，吸水层的材质包括但不限于聚丙烯酸系树脂、聚丙烯晴系树脂、聚乙烯醇系树脂以及聚环氧乙烷系树脂等中的至少一种。
在本发明的一些实施方式中，所述荧光胶层中包括氟化物红色荧光粉，在本发明的一些优选实施方式中，所述荧光胶层中还包括蓝色荧光粉（例如包括但不限于BaMgAl 11O 17:Eu，AlN:Eu，Sr 5(PO 4) 3Cl:Eu）、绿色荧光粉（例如可以包括但不限于BaSi 2O 2N 2:Eu 2+，β-SiAlON: Eu 2+，Y 3(Al,Ga) 5O 11: Ce 3+，Lu 3Al 5O 12: Ce 3+）和黄色荧光粉（例如包括但不限于Y 3Al 5O 11:Ce 3+，La 3Si 6N 11:Ce 3+，α-SiAlON：Eu 2+）中的至少一种。由此，氟化物红色荧光粉的使用性能佳，光效高，其与蓝色荧光粉、绿色荧光粉和/或黄色荧光粉混合使用利于获得发白光的发光二极管器件。
在本发明的一些优选实施方式中，所述氟化物红色荧光粉包括氟化物窄带发射红色荧光粉。在本发明的一些优选实施方式中，所述氟化物窄带发射红色荧光粉的结构与K 2SiF 6的结构相同，优选为Mn 4+掺杂的K 2SiF 6（例如包括但不限于K 2Si 0.9F 6：0.1Mn）。由此，该红色荧光粉的外量子效率高，光效高，其与上述支架和防水层的结构相配合，使得发光二极管器件在长期使用过程中均能够保持较高的光效，受潮几率低，稳定性强。
在本发明的一些优选实施方式中，所述荧光胶层中还包括氮化物红色荧光粉（例如包括但不限于Ca 0.932Sr 0.063AlSiN 3：0.005Eu 2+），且所述氮化物红色荧光粉与所述氟化物红色荧光粉的重量比为1：（2-5），例如氮化物红色荧光粉和氟化物红色荧光粉的重量比可以为1：2、1：2.5、1：3、1：3.5、1：4、1：4.5或者1：5等，由此，发光二极管器件的光效高，光谱连续性好，可靠性高。相对于上述重量比范围，当氮化物红色荧光粉和上述氟化物红色荧光粉的重量比过高时，则发光二极管器件的光效相对较低，当氮化物红色荧光粉和上述氟化物红色荧光粉的重量比过低时，则发光二极管器件光谱连续性相对较差，可靠性相对较低。
在本发明的一些优选实施方式中，所述氮化物红色荧光粉与所述氟化物红色荧光粉的重量比为1:3。
在本发明的一些实施方式中，荧光胶层中还包括荧光胶，形成荧光胶的材料包括环氧树脂胶或硅树脂胶的任一种或两种，该荧光胶与上述荧光粉混合之后形成的荧光胶层性能可以比较牢固地填充在凹槽中，在运输过程中几乎不会损坏，提高产品良率。
在本发明的一些实施方式中，为了能够有效提升出光效率，参照图1，所述防水层20的宽度W1与所述荧光胶层40的宽度W2的比值为（1-2）：5，例如防水层的宽度与荧光胶层的宽度的比值可以为1：5、1.1：5、1.2：5、1.3：5、1.4：5、1.6：5、1.6：5、1.7：5、1.8：5、1.9：5或者2：5等，优选为1.5:5。由此，在通孔中设置有上述防水层并在凹槽中填充上述荧光胶层后，从防水层反射的光几乎可以全部进入荧光胶层；利于提升出光效率。当防水层的宽度与荧光胶层的宽度比值过小时，则不利于提升出光效率，当比值过大时，则底壁的宽度过小，不利于封装且影响出光效率。
在本发明的一些实施方式中，参照图2，发光二极管器件还包括防硫化层50，所述防硫化层50设置在所述荧光胶层40远离所述防水层20的表面上。由此，可以有效防止硫元素进入凹槽内，进而保护LED发光器件的出光不受影响，提高产品的可靠性。
在本发明的一些实施例中，所述荧光胶层与所述防硫化层的折射率的比值为（1.5-1.7）：（1.8-2.1），例如可以为（1.5/1.6/1.7）：（1.8/1.9/2.0/2.1），优选为（1.6-1.7）：（1.9-2.1），进一步优选为（1.65-1.7）：（2.0-2.1）。由此，利于提高出光效率。
在本发明的一些实施方式中，形成所述防硫化层的原料包括含有二氧化硅的树脂，优选为含有纳米二氧化硅的有机硅树脂。由此，防硫化层的防硫化效果佳，二氧化硅的加入有利于提高防硫化层的折射率，进一步提升发光二极管器件的光提取效率。
在本发明的一些实施方式中，二氧化硅的粒径为5-50nm（例如可以为5nm、10nm、15nm、20nm、25nm、30nm、35nm、40nm、45nm或者50nm等），由此，防硫化层的折射率合适，利于提高出光效率。在本发明的一些优选实施方式中，二氧化硅的粒径为5-10nm。
在本发明的一些优选实施方式中，参照图2，所述防硫化层的厚度D2、所述荧光胶层的厚度D1以及所述防水层的厚度D3之比为（0.01-0.05）：1：（0.1-0.2），例如可以为（0.01/0.02/0.03/0.04/0.05）：1：（0.1/0.12/0.14/0.06/0.18/0.2）。由此，发光二极管器件密闭性好，防水、防气效果佳，出光效率高，可靠性强。当防硫化层的厚度与荧光胶层的厚度之比过低时，则发光二极管器件的密闭效果相对较差，防气、防水效果相对不佳；当防硫化层的厚度与荧光胶层的厚度之比过高时，则会增加出射光反射的损耗，降低出光效率；当防水层与荧光胶层的厚度之后过大时，则会增加出射光的反射损耗，造成出光率下降，当防水层与荧光胶层的厚度之后过小时，则支架的气密性相对较差。
在本发明的一些优选实施方式中，所述防硫化层、所述荧光胶层以及所述防水层的厚度之比为0.02:1:0.15。由此，发光二极管器件密闭更好，防水、防气效果更佳，出光效率更高，可靠性更强。
在本发明的一些实施方式中，参照图2，所述支架10包括侧壁13和底壁14，所述侧壁13和所述底壁14限定出所述凹槽11，所述通孔12设置在所述底壁14上。
需要说明的是，通孔的形状可以为方形、圆形、三角形等规则或者不规则的形状，通孔的个数也可以根据实际情况进行灵活选择，在此不再过多赘述。
在本发明的一些实施方式中，参照图2，所述支架10的侧壁13包括垂直段131和倾斜段132，所述倾斜段132连接所述垂直段131和所述底壁14，在沿出光方向上，所述倾斜段132逐渐远离所述凹槽11，所述垂直段131与所述倾斜段132之间的夹角为120°-150°，优选为120°-130°。由此，会使得LED芯片及荧光粉发出的光更多的反射出去，进而能提升光的出光效率。
在本发明的一些实施方式中，所述支架的材质包括铜镀银。由此，支架的材质比较致密，利于提高发光二极管器件的气密性，可以有效避免水气从支架渗入荧光胶层。
在本发明的一些优选实施方式中，在所述支架远离所述凹槽的表面上设置有氧化铝薄膜。由此，可以进一步避免水汽从支架渗入荧光胶层。
需要说明的是，上述氧化铝薄膜指的是厚度为0.01-0.1微米的薄膜。
在本发明的一些实施方式中，所述LED芯片设置在所述底壁上。由此，利于光线的射出，光效较高。在本发明的一些优选实施方式中，所述LED芯片的数量至少为两个，优选地，所述LED芯片包括蓝光芯片和/或紫光芯片。由此，光效更高。
在本发明一些具体的实施方式中，所述LED芯片的数量为两个，包括间隔设置的两个蓝光芯片或间隔设置的两个紫光芯片或间隔设置的一个蓝光芯片和一个紫光芯片，由此，LED发光器件的光效更高。
在本发明一些具体的实施方式中，两个LED芯片之间的峰值波长可以相同也可以不同（例如，两个LED芯片中一个为蓝光芯片（波长为440nm-480nm之间），另一个为紫光芯片（波长为400nm-430nm之间））。在本发明一些具体的实施方式中，当采用双蓝光芯片或者蓝光芯片+紫光芯片时，荧光胶层中包括氟化物红色荧光粉（例如氟化物窄带发射红色荧光粉，其结构可以与K 2SiF 6相同），以及绿色荧光粉、黄色荧光粉的至少一种，还可以包括其他种类的红色荧光粉（例如氮化物红色荧光粉等）。在本发明另一些具体的实施方式中，当采用双紫光芯片时，荧光粉层中包括氟化物窄带红色荧光粉（例如氟化物窄带发射红色荧光粉，其结构可以与K 2SiF 6相同），以及蓝色荧光粉、绿色荧光粉、黄色荧光粉的至少两种，还可以包括其他种类的红色荧光粉（例如氮化物红色荧光粉等）。
在本发明的一些优选实施方式中，当两个LED芯片均为蓝光芯片，且荧光胶层中包括铝酸盐绿色荧光粉、氮化物红色荧光粉和氟化物窄带红色荧光粉，此时发光二极管器件具有较高的光效。
在本发明的一些实施方式中，参照图2，所述LED芯片30与所述支架10之间设置有固晶层32。由此，LED芯片可以更加牢固地固定在支架上。在本发明的一些实施方式中，形成固晶层的材料包括金属（例如铜、铁、铝等中的至少一种）等。
在本发明的一些具体实施方式中，发光二极管器件是通过以下方法制备得到的：
在支架上开设通孔；在通孔内喷涂有机硅树脂胶；固化后，将LED芯片固定在支架底部（例如可以包括常规的固晶操作）；在凹槽中喷涂荧光胶层；最后在荧光胶层的表面喷涂复合有纳米SiO 2的有机硅树脂胶。
在本发明的一些实施方式中，参照图3，在支架的外侧设置有封装壳体60，该壳体可以有效保护发光二极管器件，为了能够使得LED芯片正常工作，发光二极管器件还包括与LED芯片30电连接的焊线31。可以理解的是，在封装发光二极管器件之后，空气和/或水气会从支架和封装壳体之间渗入，而本发明的上述发光二极管器件的结构可以有效防止空气和水气进入荧光胶层，从而显著提高发光二极管器件的可靠性，使其在长期使用过程中均能够保持较高的光效。
需要说明的是，在本发明的一些具体实施方式中，在发光二极管器件中，光线透过荧光胶层和防硫化层进行出光；本文中的描述“底壁”仅是为了方便描述支架的结构，不能理解为对本申请的限制，具体的，底壁的设置位置在上述出光方向的反方向。
在本发明的另一方面，本发明提供了一种发光装置，其包括前面所述的发光二极管器件。由此，该发光装置稳定性强，光谱连续性好，在长期使用过程中均能保持较强的光照强度。
需要说明的是，发光装置除了包括前面所述的发光二极管器件之外，还可以包括常规的封装结构、开关、外壳和/或电源等结构，在此不再过多赘述。
可以理解的是，在具体的发光装置中，发光二极管器件的支架外侧设置有封装结构，该封装结构与支架之间的空隙极其微小或者不存在空隙，能够进入封装结构与支架之间的水分的量很少，因此，在使用过程中，吸水层吸收水分后可以降低水分从支架进入荧光胶层的几率，且吸水层可以长期发挥吸水作用，从而有效保证发光二极管器件具有较长的使用寿命；另外，防水层的防水效果较佳，可以有效避免水从防水层进入荧光胶层，有效延长发光二极管器件的使用寿命。
在本发明的一些实施方式中，所述发光装置包括灯具，优选包括球泡灯、射灯、面板灯、线条灯和投光灯中的至少一种。有此，发光二极管应用场景广泛。
下面通过具体的实施例进一步说明本发明，但是，应当理解为，这些实施例仅仅是用于更详细地说明之用，而不应理解为用于以任何形式限制本发明。
发光二极管器件的性能检测方法：
1、色温、显指和光效是采用远方Hass2000仪器测试得到的；
2、光衰：在温度为85℃，湿度为85%条件下进行老化，老化时间为1000h。
实施例1
发光二极管器件的结构如图2所示，包括设置有凹槽11的支架10，防水层20、吸水层70、荧光胶层40、防硫化层50和两个间隔设置的蓝光LED芯片30，支架10包括底壁14和侧壁13，侧壁13具有垂直段131和倾斜段132，垂直段131和倾斜段132之间的夹角为120°，防硫化层50的厚度D2与垂直段131的高度相同，荧光胶层40的厚度D1与倾斜段132的高度相同，底壁上设置有通孔12，通孔12中设置有由甲基硅树脂形成的防水层，其中，防水层的宽度（即通孔的宽度）与荧光胶层的宽度（即凹槽的宽度）之比为1：5，防硫化层、荧光胶层以及防水层的厚度之比为0.01：1：0.1，形成支架的材料为铜镀银，形成防硫化层的材料为复合有纳米二氧化硅的有机硅树脂，形成吸水层的材料包括聚丙烯酸树脂，荧光胶层包括：铝酸绿色荧光粉：Lu 2.95Al 5O 12：0.05Ce 3+、氮化物红色荧光粉Ca 0.932Sr 0.063AlSiN 3：0.005Eu 2+、氟化物红色荧光粉：K 2Si 0.9F 6：0.1Mn，其中氮化物红色荧光粉和氟化物红色荧光粉重量比为1：2。
实施例2
发光二极管器件的结构同实施例1，不同之处在于氮化物红色荧光粉和氟化物红色荧光粉重量比为1：3。
实施例3
发光二极管器件的结构同实施例1，不同之处在于氮化物红色荧光粉和氟化物红色荧光粉重量比为1：4，其光色性能如表1所示。
实施例4
发光二极管器件的结构同实施例1，不同之处在于氮化物红色荧光粉和氟化物红色荧光粉重量比为1：5。
实施例5
发光二极管器件的结构同实施例1，不同之处在于氮化物红色荧光粉和氟化物红色荧光粉重量比为1：1。
实施例6
发光二极管器件的结构同实施例1，不同之处在于氮化物红色荧光粉和氟化物红色荧光粉重量比为1：6。
实施例7
发光二极管器件的结构同实施例1，不同之处在于防硫化层、荧光胶层以及防水层的厚度之比为0.05：1：0.2。
实施例8
发光二极管器件的结构同实施例1，不同之处在于防硫化层、荧光胶层以及防水层的厚度之比为0.03：1：0.15。
实施例9
发光二极管器件的结构同实施例1，不同之处在于防硫化层、荧光胶层以及防水层的厚度之比为0.05：1：0.4。
实施例10
发光二极管器件的结构同实施例1，不同之处在于防硫化层、荧光胶层以及防水层的厚度之比为0.005：1：0.05。
实施例11
发光二极管器件的结构同实施例1，不同之处在于垂直段和倾斜段之间的夹角为130°。
实施例12
发光二极管器件的结构同实施例1，不同之处在于垂直段和倾斜段之间的夹角为150°。
实施例13
发光二极管器件的结构同实施例1，不同之处在于垂直段和倾斜段之间的夹角为100°。
实施例14
发光二极管器件的结构同实施例1，不同之处在于垂直段和倾斜段之间的夹角为160°。
实施例15
发光二极管器件的结构同实施例1，不同之处在于垂直段和倾斜段之间的夹角为90°。
实施例16
发光二极管器件的结构同实施例1，不同之处在于防水层的宽度与荧光胶层的宽度的比值为2：5。
实施例17
发光二极管器件的结构同实施例1，不同之处在于防水层的宽度与荧光胶层的宽度的比值为0.5：5。
实施例18
发光二极管器件的结构同实施例1，不同之处在于防水层的宽度与荧光胶层的宽度的比值为3：5。
实施例19
发光二极管器件的结构同实施例1，不同之处在于在支架远离凹槽的表面上设置有氧化铝薄膜。
实施例20
发光二极管器件的结构同实施例1，不同之处在于防水层包括第一防水层和第二防水层，第一防水层的材质为氧化铝，第二防水层的材质为复合有纳米二氧化硅的有机硅树脂。
对比例1
发光二极管器件的结构示意图如图4所示，在支架10底部间隔设置同实施例1规格相同的2个蓝光LED芯片30，蓝光LED芯片30上方设置有荧光胶层40，荧光胶层中包括：铝酸绿色荧光粉：Lu 2.95Al 5O 12：0.05Ce 3+、氮化物红色荧光粉：Ca 0.932Sr 0.063AlSiN 3：0.005Eu 2+、氟化物红色荧光粉：K 2Si 0.9F 6：0.1Mn。采用以上铝酸绿色荧光粉、氮化物红色荧光粉和氟化物红色荧光粉进行调配，其中氮化物红色荧光粉和氟化物红色荧光粉重量比例为1：5。
对比例2
发光二极管器件的结构同实施例1，不同之处在于支架上没有通孔，也没有防水层。
对比例3
发光二极管器件的结构同实施例1，不同之处在于不含吸水层。
实施例1-20以及对比例1-3的发光二极管器件的光色性能如表1所示：
表1
  色温/K 显指 光效/ lm/W 光衰/%
实施例1 6500 90 140 3
实施例2 6500 90 145 3.5
实施例3 6500 90 151 4
实施例4 6500 90 158 5
实施例5 6500 90 120 3
实施例6 6500 90 165 8
实施例7 6500 90 135 2.2
实施例8 6500 90 138 2.6
实施例9 6500 90 115 2
实施例10 6500 90 142 3.5
实施例11 6500 90 137 3.1
实施例12 6500 90 133 4
实施例13 6500 90 135 3
实施例14 6500 90 125 5
实施例15 6500 90 130 4
实施例16 6500 90 135 4.2
实施例17 6500 90 141 6
实施例18 6500 90 123 4.5
实施例19 6500 90 140 1
实施例20 6500 90 140 0.5
对比例1 6500 90 100 20
对比例2 6500 90 90 25
对比例3 6500 90 138 12
尽管已用具体实施例来说明和描述了本发明，然而应意识到，在不背离本发明的精神和范围的情况下可以作出许多其它的更改和修改。因此，这意味着在所附权利要求中包括属于本发明范围内的所有这些变化和修改。

Claims (10)

  1. 一种发光二极管器件，其特征在于，包括：
    支架，所述支架设置有凹槽，且所述支架上设置有通孔；
    防水层，所述防水层设置在所述通孔中；
    至少一个LED芯片，所述至少一个LED芯片固定在所述支架上；
    荧光胶层，填充在所述凹槽内并覆盖所述至少一个LED芯片和所述防水层；
    吸水层，所述吸水层设置在所述通孔中，且所述吸水层设置在所述防水层远离所述荧光胶层的表面上。
  2. 根据权利要求1所述的发光二极管器件，其特征在于，所述防水层包括第一防水层和第二防水层，所述第二防水层设置在所述第一防水层与所述吸水层之间；
    优选地，所述第一防水层和所述第二防水层的材质各自独立地包括环氧树脂、有机硅树脂、氧化铝以及含有二氧化硅的树脂中的至少一种；
    优选地，所述第一防水层和所述第二防水层中的一个的材质包括氧化铝，所述第一防水层和所述第二防水层中的另一个的材质包括环氧树脂、有机硅树脂以及含有二氧化硅的树脂中的至少一种；
    优选地，所述有机硅树脂包括改性甲基硅树脂。
  3. 根据权利要求1或2所述的发光二极管器件，其特征在于，还包括防硫化层，所述防硫化层设置在所述荧光胶层远离所述防水层的表面上；
    优选地，所述荧光胶层与所述防硫化层的折射率的比值为（1.5-1.7）：（1.8-2.1），优选为（1.6-1.7）：（1.9-2.1），进一步优选为（1.65-1.7）：（2.0-2.1）；
    优选地，形成所述防硫化层的原料包括含有二氧化硅的树脂，优选为含有纳米二氧化硅的有机硅树脂；
    优选地，所述二氧化硅的粒径为5-50nm，优选为5-10nm。
  4. 根据权利要求3所述的发光二极管器件，其特征在于，所述支架包括侧壁和底壁，所述侧壁和所述底壁限定出所述凹槽，所述通孔设置在所述底壁上；
    优选地，所述侧壁包括垂直段和倾斜段，所述倾斜段连接所述垂直段和所述底壁，在沿出光方向上，所述倾斜段逐渐远离所述凹槽，且所述垂直段与所述倾斜段之间的夹角为120°-150°，优选为120°-130°；
    优选地，所述支架的材质包括铜镀银；
    优选地，在所述支架远离所述凹槽的表面上设置有氧化铝薄膜。
  5. 根据权利要求1、2或4所述的发光二极管器件，其特征在于，所述LED芯片设置在所述支架的底壁上，且所述LED芯片的数量至少为两个；
    优选地，所述LED芯片包括蓝光芯片和/或紫光芯片；
    优选地，所述LED芯片的数量为两个，包括间隔设置的两个蓝光芯片或间隔设置的两个紫光芯片或间隔设置的一个蓝光芯片和一个紫光芯片；
    优选地，所述LED芯片与所述支架之间设置有固晶层。
  6. 根据权利要求5所述的发光二极管器件，其特征在于，所述荧光胶层中包括氟化物红色荧光粉；
    优选地，所述荧光胶层中还包括蓝色荧光粉、绿色荧光粉和黄色荧光粉中的至少一种；
    优选地，所述氟化物红色荧光粉包括氟化物窄带发射红色荧光粉；
    优选地，所述氟化物窄带发射红色荧光粉的结构与K 2SiF 6的结构相同，优选为Mn 4+掺杂的K 2SiF 6；
    优选地，所述荧光胶层中还包括氮化物红色荧光粉，且所述氮化物红色荧光粉与所述氟化物红色荧光粉的重量比为1：（2-5），优选为1:3。
  7. 根据权利要求4所述的发光二极管器件，其特征在于，所述防硫化层、所述荧光胶层以及所述防水层的厚度之比为（0.01-0.05）：1：（0.1-0.2），优选为0.02:1:0.15。
  8. 根据权利要求4所述的发光二极管器件，其特征在于，所述防水层的宽度与所述荧光胶层的宽度的比值为（1-2）：5，优选为1.5:5。
  9. 一种发光装置，其特征在于，包括权利要求1-8任一项所述的发光二极管器件。
  10. 根据权利要求9所述的发光装置，其特征在于，所述发光装置包括灯具，优选包括球泡灯、射灯、面板灯、线条灯和投光灯中的至少一种。
PCT/CN2020/089157 2019-06-28 2020-05-08 发光二极管器件以及发光装置 WO2020211874A1 (zh)

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110277478B (zh) * 2019-06-28 2021-03-30 旭宇光电（深圳）股份有限公司 发光二极管器件以及发光装置
CN112563396B (zh) * 2019-09-25 2022-04-22 天津德高化成新材料股份有限公司 一种用于潮气敏感的高色域背光应用的芯片级封装结构及制造方法
CN113097366B (zh) * 2021-03-24 2022-04-15 广东良友科技有限公司 一种倒装双面封装全周发光led支架及制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150009010A (ko) * 2013-07-08 2015-01-26 엘지전자 주식회사 엘이디 조명기구 및 그 제조방법
CN205316056U (zh) * 2015-12-17 2016-06-15 深圳市万兴锐科技有限公司 具有防水功能的led灯珠
CN205985072U (zh) * 2016-06-22 2017-02-22 扬州市云腾照明灯饰科技有限公司 Led封装及灯具
CN206271754U (zh) * 2016-11-07 2017-06-20 深圳市源磊科技有限公司 一种气密性改良的led支架
CN206441766U (zh) * 2017-02-13 2017-08-25 东莞市裕金电子有限公司 一种发光二极管条
CN110277478A (zh) * 2019-06-28 2019-09-24 旭宇光电（深圳）股份有限公司 发光二极管器件以及发光装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102543986A (zh) * 2012-01-04 2012-07-04 歌尔声学股份有限公司 发光二极管装置
US8904629B2 (en) * 2012-03-09 2014-12-09 LG CNS Co. Ltd. Light-emitting diode (LED) wafer picker
CN103325953B (zh) * 2012-03-19 2016-02-10 瀚宇彩晶股份有限公司 有机发光二极管封装及其封装方法
CN103682049B (zh) * 2013-12-26 2016-09-14 四川柏狮光电技术有限公司 一种防水贴片led及其生产工艺
CN204760422U (zh) * 2015-06-09 2015-11-11 东莞昶通精密五金有限公司 一种附着紧密的led支架杯
CN204991763U (zh) * 2015-08-10 2016-01-20 佛山市国星光电股份有限公司 一种led器件
CN206210833U (zh) * 2016-11-30 2017-05-31 东莞市良友五金制品有限公司 一种防水led支架
CN208240715U (zh) * 2018-03-30 2018-12-14 东莞市良友五金制品有限公司 一种防水侧光源led支架
CN208521956U (zh) * 2018-07-16 2019-02-19 安徽芯瑞达科技股份有限公司 一种防潮led灯珠
CN109841719B (zh) * 2019-02-15 2020-04-24 旭宇光电（深圳）股份有限公司 半导体发光二极管装置和灯具

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150009010A (ko) * 2013-07-08 2015-01-26 엘지전자 주식회사 엘이디 조명기구 및 그 제조방법
CN205316056U (zh) * 2015-12-17 2016-06-15 深圳市万兴锐科技有限公司 具有防水功能的led灯珠
CN205985072U (zh) * 2016-06-22 2017-02-22 扬州市云腾照明灯饰科技有限公司 Led封装及灯具
CN206271754U (zh) * 2016-11-07 2017-06-20 深圳市源磊科技有限公司 一种气密性改良的led支架
CN206441766U (zh) * 2017-02-13 2017-08-25 东莞市裕金电子有限公司 一种发光二极管条
CN110277478A (zh) * 2019-06-28 2019-09-24 旭宇光电（深圳）股份有限公司 发光二极管器件以及发光装置

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