WO2020207124A1 - Substrat d'affichage et son procédé de fabrication, et dispositif d'affichage - Google Patents

Substrat d'affichage et son procédé de fabrication, et dispositif d'affichage Download PDF

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Publication number
WO2020207124A1
WO2020207124A1 PCT/CN2020/076185 CN2020076185W WO2020207124A1 WO 2020207124 A1 WO2020207124 A1 WO 2020207124A1 CN 2020076185 W CN2020076185 W CN 2020076185W WO 2020207124 A1 WO2020207124 A1 WO 2020207124A1
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Prior art keywords
layer
light
anode
base substrate
emitting layer
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PCT/CN2020/076185
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English (en)
Chinese (zh)
Inventor
崔颖
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京东方科技集团股份有限公司
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Publication of WO2020207124A1 publication Critical patent/WO2020207124A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Definitions

  • the application relates to a display substrate, a manufacturing method thereof, and a display device.
  • the application provides a display substrate, a manufacturing method thereof, and a display device.
  • the technical solution of this application is as follows:
  • the pixel defining layer includes a pixel area, the anode is at least partially located in the pixel area, the light-emitting layer is located in the pixel area, a central area of the light-emitting layer is electrically connected to the anode, and the light-emitting layer
  • the edge area is insulated from the anode.
  • the display substrate further includes:
  • the anode covers a side of the convex structure away from the base substrate and a side surface of the convex structure, and the pixel defining layer covers the side surface of the anode.
  • the display substrate further includes a cathode located on a side of the light-emitting layer away from the base substrate, and the cathode is electrically connected to the light-emitting layer.
  • the display substrate further includes: a hole injection layer and a hole transport layer located in the pixel region, the hole injection layer and the hole transport layer along a direction away from the base substrate Distributed between the anode and the light-emitting layer, the central area of the light-emitting layer is electrically connected to the anode through the hole transport layer and the hole injection layer.
  • the display substrate further includes: a thin film transistor located between the base substrate and the anode, and an encapsulation layer located on a side of the cathode away from the base substrate.
  • a method for manufacturing a display substrate including:
  • the anode covers a side of the convex structure away from the base substrate and a side surface of the convex structure, and the pixel defining layer covers the side surface of the anode.
  • the method further includes:
  • the step of sequentially forming a hole injection layer and a hole transport layer in the pixel area includes: sequentially forming a hole injection layer and a hole transport layer in the pixel area through an inkjet printing process;
  • a display device which includes the display substrate according to the above aspect or any optional manner of the aspect.
  • FIG. 3 is a schematic structural diagram of another display substrate provided by an embodiment of the present application.
  • FIG. 6 is a method flowchart of a method for manufacturing a display substrate provided by an embodiment of the present application.
  • FIG. 7 is a method flowchart of another method for manufacturing a display substrate provided by an embodiment of the present application.
  • FIG. 8 is a schematic diagram after forming a thin film transistor on a base substrate provided by an embodiment of the present application.
  • FIG. 11 is a schematic diagram after forming a pixel defining layer on a base substrate on which an anode is formed according to an embodiment of the present application;
  • FIG. 12 is a schematic diagram after HIL and HTL are sequentially formed in a pixel area according to an embodiment of the present application;
  • FIG. 14 is a schematic diagram of an ETL and an EIL formed in a pixel area formed with an EML according to an embodiment of the present application;
  • FIG. 16 is a schematic diagram after forming an encapsulation layer on a base substrate with a cathode provided by an embodiment of the present application.
  • the inkjet printing process is usually used to print the luminescent material solution in the pixel area, and then the luminescent material solution in the pixel area is dried to remove its solvent, so that the solute is retained to form the luminescent layer.
  • the inkjet printing process is a process in which a solution (also called ink) is printed on a target area (that is, a desired area) through a micron-level print nozzle. It has simple operation, low cost, simple process and easy to achieve large With the advantages of manufacturing size display substrates and other advantages, with the continuous research and development of high-performance polymer materials and the improvement of film preparation technology, the inkjet printing process is expected to be industrialized quickly.
  • the embodiments of the present application provide a display substrate, a manufacturing method thereof, and a display device.
  • the central area of the light-emitting layer is electrically connected to the anode, and the edge area of the light-emitting layer is insulated from the anode.
  • the light-emitting layer The central area of the light-emitting layer emits light, and the edge area does not emit light. Even if the thickness of the edge area of the light-emitting layer is different from the thickness of the central area, since the thickness of the central area of the light-emitting layer is better, the uniformity of the light-emitting brightness of the light-emitting layer is higher. . Please refer to the description of the following embodiments for the solution of this application.
  • the light emitting layer 108 has a central area 1081 and an edge area 1082 surrounding the central area 1081.
  • the central area 1081 of the light emitting layer 108 is electrically connected to the anode 104, and the edge area 1082 of the light emitting layer 108 is insulated from the anode 104.
  • the central area of the light-emitting layer is electrically connected to the anode, and the edge area of the light-emitting layer is insulated from the anode. Therefore, during the operation of the display substrate, the light-emitting layer The central area emits light but the edge area does not emit light. Even if the thickness of the edge area of the light-emitting layer is different from the thickness of the central area, the thickness of the central area of the light-emitting layer is better, and it will not affect the uniformity of the light-emitting brightness of the light-emitting layer. .
  • the solution provided by the present application helps solve the problem of poor uniformity of the light-emitting brightness of the light-emitting layer, and helps ensure the uniformity of the light-emitting brightness of the light-emitting layer.
  • FIG. 3 shows a schematic structural diagram of another display substrate provided by an embodiment of the present application.
  • the display substrate further includes: The upper flat layer 103, the anode 104, the pixel defining layer 105, and the light-emitting layer 108 are located on the side of the flat layer 103 away from the base substrate 101; the flat layer 103 has a raised structure 1031 that faces away from the base substrate 101
  • FIG. 4 shows a projection relationship diagram of a pixel area P and a convex structure 1031 provided by an embodiment of the present application. Referring to FIGS. 3 and 4, the pixel area P is on the base substrate 101.
  • the orthographic projection above covers the orthographic projection of the raised structure 1031 on the base substrate 101.
  • the anode 104 is located at least on the side of the raised structure 1031 away from the base substrate 101, and the base layer 1052 is away from the base substrate 101.
  • the side of the anode 104 is flush with the side of the anode 104 away from the base substrate 101, so that the portion of the base layer 1052 in the pixel region P has an anode opening K, and the central area 1081 of the light-emitting layer 108 is electrically connected to the anode 104 through the anode opening K.
  • the longitudinal section of the protruding structure 1031 is trapezoidal, and the longitudinal section of the anode 104 may be arched.
  • the longitudinal section of the raised structure 1031 may refer to the section of the raised structure 1031 that is perpendicular to the surface of the base substrate 101
  • the longitudinal section of the anode 104 may refer to the section of the anode 104 and the base substrate.
  • the vertical cross-section of the board of 101 may be in the shape of a terrace, and the anode 104 may cover a side of the raised structure 1031 away from the base substrate 101 and all sides of the raised structure 1031.
  • the display substrate further includes: a hole injection layer 106 and a hole transport layer 107 located in the pixel region P, and the hole injection layer 106 and the hole transport layer 107 are far away from the base substrate
  • the direction of 101 is distributed between the anode 104 and the light-emitting layer 108, and the central area 1081 of the light-emitting layer 108 is electrically connected to the anode 104 through the hole transport layer 106 and the hole injection layer 107.
  • the hole injection layer 106 can be used to inject holes into the light-emitting layer 108
  • the hole transport layer 107 can be used to adjust the speed and amount of holes injected by the hole injection layer 106 into the light-emitting layer 108, and improve the efficiency of the light-emitting layer 108. Luminous efficiency.
  • the display substrate further includes: a thin film transistor 102 located between the base substrate 101 and the flat layer 103, and an encapsulation layer 112 located on the side of the cathode 111 away from the base substrate 101.
  • the thin film transistor 102 may be a top-gate thin film transistor or a bottom-gate thin film transistor, which is not limited in the embodiment of the present application.
  • the thin film transistor 102 may include a gate (not shown in FIG.
  • the encapsulation layer 112 may be a thin-film encapsulation layer or a encapsulation cover plate, the thin-film encapsulation layer may include an inorganic layer and an organic layer alternately stacked, and the encapsulation cover plate may be a transparent substrate.
  • the area on the flat layer 103 corresponding to the drain of the thin film transistor 102 may have a via hole (not shown in FIG. 5), and the anode 104 may be electrically connected to the drain of the thin film transistor 102 through the via hole.
  • the embodiments are not repeated here.
  • the display substrate may be an electroluminescent display substrate
  • the light emitting layer 108 may be an electroluminescent layer
  • the light emitting layer 108 is an organic light emitting layer
  • the organic light emitting layer may be a polymer organic light emitting layer.
  • the central area of the light-emitting layer is electrically connected to the anode, and the edge area of the light-emitting layer is insulated from the anode. Therefore, during the operation of the display substrate, the light-emitting layer The central area emits light but the edge area does not emit light. Even if the thickness of the edge area of the light-emitting layer is different from the thickness of the central area, the thickness of the central area of the light-emitting layer is better, and it will not affect the uniformity of the light-emitting brightness of the light-emitting layer. .
  • the solution provided by the present application helps solve the problem of poor uniformity of the light-emitting brightness of the light-emitting layer, and helps ensure the uniformity of the light-emitting brightness of the light-emitting layer.
  • the display substrate provided by the embodiment of the present application can be applied to the following method, and the manufacturing method of the display substrate of the embodiment of the present application can be referred to the description in the following embodiments.
  • an anode and a pixel defining layer are sequentially formed on a base substrate.
  • the pixel defining layer includes a pixel area, and the anode is at least partially located in the pixel area.
  • the pixel defining layer includes: a base layer, a barrier structure located on a side of the base layer away from the base substrate, and a pixel area defined by the barrier structure, the base layer is at least partially located in the pixel area, and the base layer is located in the pixel area
  • the middle part has an anode opening, the central area of the light-emitting layer is electrically connected to the anode through the anode opening, and the edge area of the light-emitting layer is connected to the base layer.
  • the longitudinal section of the anode is arched.
  • the method further includes:
  • a cathode is formed on the base substrate on which the light-emitting layer is formed, and the cathode is electrically connected to the light-emitting layer.
  • the method further includes:
  • step 602 includes:
  • a light-emitting layer is formed in the pixel area where the hole transport layer is formed.
  • the hole transport layer and the light-emitting layer are superimposed along the direction away from the base substrate.
  • the central area of the light-emitting layer is electrically connected to the anode through the hole transport layer and the hole injection layer .
  • the method further includes:
  • an electron transport layer and an electron injection layer are sequentially formed, and the light-emitting layer, the electron transport layer and the electron injection layer are superimposed in a direction away from the base substrate;
  • forming a cathode on the base substrate on which the light-emitting layer is formed includes:
  • a cathode is formed on the base substrate on which the electron injection layer is formed, and the cathode is electrically connected to the light emitting layer through the electron injection layer and the electron transport layer.
  • the hole injection layer and the hole transport layer are sequentially formed in the pixel area through an inkjet printing process
  • Forming a light-emitting layer in the pixel area includes:
  • An electron transport layer and an electron injection layer are sequentially formed in the pixel area where the light-emitting layer is formed, including:
  • An electron transport layer and an electron injection layer are sequentially formed in the pixel area where the light-emitting layer is formed through an evaporation process.
  • the method further includes:
  • step 601 includes: sequentially forming an anode and a pixel defining layer on the base substrate on which the thin film transistor is formed;
  • the method further includes:
  • An encapsulation layer is formed on the base substrate on which the cathode is formed.
  • FIG. 7 shows a method flow chart of another method for manufacturing a display substrate provided by an embodiment of the present application.
  • the method for manufacturing a display substrate can be used to manufacture any one shown in FIG. 1, FIG. 3, or FIG. 5.
  • the display substrate of the present application is described by taking the manufacturing of the display substrate shown in FIG. 5 as an example. Referring to Figure 7, the method may include the following steps:
  • step 701 a thin film transistor is formed on a base substrate.
  • FIG. 8 shows a schematic diagram after forming a thin film transistor 102 on a base substrate 101 according to an embodiment of the present application.
  • the thin film transistor 102 may include a gate (not shown in FIG. 8), a gate insulating layer (not shown in FIG. 8), an active layer (not shown in FIG. 8), and an interlayer dielectric layer (not shown in FIG. 8). Out), source (not shown in Figure 8) and drain (not shown in Figure 8), the source and drain can be distributed in the same layer, and the source and drain are not in contact, the source and drain are respectively Contact with the active layer.
  • the thin film transistor 102 may be a top gate thin film transistor or a bottom gate thin film transistor, which is not limited in the embodiment of the present application.
  • forming the thin film transistor 102 on the base substrate 101 may include: sequentially forming a gate, a gate insulating layer, an active layer, and a layer on the base substrate 101. Between the dielectric layer and the source drain layer, the source drain layer includes a source electrode and a drain electrode.
  • step 702 a flat layer is formed on the base substrate on which the thin film transistor is formed, and the flat layer has a convex structure.
  • FIG. 9 shows a schematic diagram after a flat layer 103 is formed on a base substrate 101 on which a thin film transistor 102 is formed according to an embodiment of the present application.
  • the flat layer 103 has a raised structure 1031, and the raised structure 1031 is raised in a direction away from the base substrate 101.
  • the longitudinal section of the raised structure 1031 may be trapezoidal, and the longitudinal section of the raised structure 1031
  • the cross-section may refer to the cross-section perpendicular to the surface of the base substrate 101 in the cross-section of the convex structure 1031.
  • the raised structure 1031 may be in the shape of a terrace.
  • the region on the planarization layer 103 corresponding to the drain of the thin film transistor 102 may have a via hole (not shown in FIG. 9), so that the subsequently formed anode can pass through the via hole and the drain of the thin film transistor 102. Extremely electrical connection.
  • the material of the flat layer 103 may be a transparent organic material such as organic resin, or the material of the flat layer 103 may be SiOx (Chinese: silicon oxide), SiNx (Chinese: silicon nitride), Al 2 O 3 (Chinese: Alumina) or SiOxNx (Chinese: silicon oxynitride) and other transparent inorganic materials.
  • forming the flat layer 103 on the base substrate 101 on which the thin film transistor 102 is formed may include: magnetron sputtering, thermal evaporation, or plasma enhanced chemical vapor deposition Method (English: Plasma Enhanced Chemical Vapor Deposition; abbreviation: PECVD) and other processes deposit a layer of organic resin on the base substrate 101 on which the thin film transistor 102 is formed to obtain a resin material layer, and sequentially expose the resin material layer And developing to obtain a flat layer 103.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the protruding structure 1031 described in step 702 and the protruding structure 1031 shown in FIG. 9 are only exemplary, and the longitudinal section of the protruding structure 1031 may also have other shapes.
  • the convex structure 1031 may also have other shapes.
  • the convex structure 1031 may also have a truncated cone shape, which is not limited in the embodiment of the present application.
  • step 703 an anode is formed on the base substrate on which the flat layer is formed, and the anode is located at least on the side of the convex structure away from the base substrate.
  • FIG. 10 shows a schematic diagram after forming an anode 104 on a base substrate 101 with a flat layer 103 provided by an embodiment of the present application.
  • the anode 104 is located at least on the side of the raised structure 1031 away from the base substrate 101.
  • the longitudinal section of the anode 104 is arched, and the anode 104 covers the side of the raised structure 1031 away from the base substrate 101 and the side of the raised structure 1031, wherein the side of the raised structure 1031 may refer to the raised structure 1031
  • the longitudinal section of the anode 104 may refer to the section of the anode 104 that is perpendicular to the plate surface of the base substrate 101.
  • the material of the anode 104 may be indium tin oxide (English: Indium tin oxide; abbreviation: ITO), indium zinc oxide (English: Indium zinc oxide; abbreviation: IZO) or aluminum-doped zinc oxide (English: aluminum-doped zinc oxide; abbreviation: ZnO:Al) and other metal oxides.
  • forming the anode 104 on the base substrate 101 on which the flat layer 103 is formed may include: any one of magnetron sputtering, thermal evaporation or PECVD processes A layer of ITO is deposited on the base substrate 101 on which the flat layer 103 is formed to obtain an ITO material layer, and the ITO material layer is processed through a patterning process to obtain the anode 104.
  • FIG. 11 shows a schematic diagram after forming a pixel defining layer 105 on a base substrate 101 formed with an anode 104 provided by an embodiment of the present application.
  • the pixel defining layer 105 base layer 1052 the barrier structure 1051 located on the side of the base layer 1052 away from the base substrate 101, and the pixel area P defined by the barrier structure 1051, the pixel area P on the base substrate 101
  • the orthographic projection can cover the orthographic projection of the raised structure 1031 on the base substrate 101, the base layer 1052 is at least partially located in the pixel area P, the portion of the base layer 1052 located in the pixel area P has an anode opening K, and the base layer 1052 is away from the substrate
  • the side of the substrate 101 is flush with the side of the anode 104 away from the base substrate 101.
  • the distance between the side of the wall structure 1051 away from the base substrate 101 and the base substrate 101 is greater than the distance between the pixel area P and the base substrate 101 (that is, the wall structure 1051 is opposite to the substrate 101).
  • the height of the substrate 101 is greater than the height of the pixel area P relative to the base substrate 101). Therefore, relative to the barrier structure 1051, the pixel area P is located in the pit, so in some scenarios, the pixel area P is also called a pixel pit.
  • the pixel defining layer 105 covers the side surface of the anode 104.
  • the base layer 1052 of the pixel defining layer 105 covers the side surface of the anode 104.
  • the side surface of the anode 104 may refer to the surface of the anode 104 and the liner.
  • the intersecting surface of the base substrate 101, wherein the pixel defining layer 105 is made of insulating material, and covering the side surface of the anode 104 by the pixel defining layer 105 helps to reduce the risk of side leakage of the anode 104.
  • the material of the pixel defining layer 105 may be a transparent organic material such as organic resin, or the material of the pixel defining layer 105 may be a transparent inorganic material such as SiOx, SiNx, Al 2 O 3 or SiOxNx.
  • forming the pixel defining layer 105 on the base substrate 101 on which the anode 104 is formed may include: using magnetron sputtering, thermal evaporation, or PECVD processes. In either case, a layer of organic resin is deposited on the base substrate 101 on which the anode 104 is formed to obtain a resin material layer, and the resin material layer is sequentially exposed and developed to obtain the pixel defining layer 105.
  • a hole injection layer and a hole transport layer may be sequentially formed in the pixel area through an inkjet printing process.
  • the hole injection layer 106 and the hole transport layer 107 in the pixel area P in sequence may include: firstly, printing the hole injection material solution in the pixel area P by an inkjet printing process, and the printed hole injection material The solution is dried to obtain the hole injection layer 106, and then the hole transport material solution is printed in the pixel area P where the hole injection layer 106 is formed, and the printed hole transport material solution is dried to obtain the hole transport layer 107.
  • a light-emitting layer is formed in the pixel area where the hole transport layer is formed.
  • the central area of the light-emitting layer is electrically connected to the anode through the hole transport layer and the hole injection layer, and the edge area of the light-emitting layer is insulated from the anode.
  • the light emitting layer 108 has a central area 1081 and an edge area 1082, the edge area 1082 surrounds the central area 1081, the central area 1081 of the light-emitting layer 108 is electrically connected to the anode 104 through the hole transport layer 107 and the hole injection layer 106, and the edge area 1082 of the light-emitting layer 108 passes through the hole transport layer 107 and the hole
  • the hole injection layer 106 is connected to the base layer 1052 of the pixel defining layer 105, and the anode 104 is connected to the base layer 1052. Since the base layer 1052 is made of insulating material, the edge region 1082 of the light-emitting layer 108 is insulated from the anode 104.
  • the material of the light-emitting layer 108 may be an electroluminescent material, for example, it may be an organic light-emitting material.
  • forming the light-emitting layer 108 in the pixel area P where the hole transport layer 107 is formed may include: printing an organic light-emitting material solution in the pixel area P where the hole transport layer 107 is formed by an inkjet printing process to print The organic light-emitting material solution is dried to obtain the light-emitting layer 108.
  • the display substrate may include light-emitting layers of different colors, the light-emitting layer of each color can be formed by one inkjet printing process, and the light-emitting layers of different colors can be formed by multiple inkjet printing processes.
  • 706 describes the process of forming a light-emitting layer of one color, and this step 706 can be repeated multiple times to form light-emitting layers of different colors.
  • the display substrate may be a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, and this step 706 may be repeated three times to form a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, which will not be repeated in the embodiments of the present application.
  • step 707 an electron transport layer and an electron injection layer are sequentially formed in the pixel area where the light-emitting layer is formed.
  • an electron transport layer and an electron injection layer may be sequentially formed in the pixel area where the light-emitting layer is formed by an evaporation process.
  • the material of the electron transport layer 109 may be an electron transport material
  • the material of the electron injection layer 110 may be an electron injection material
  • the electron transport material may be 8-hydroxyquinoline-lithium, for example, and the electron injection material may be coumarone.
  • Prime 545T sequentially forming the electron transport layer 109 and the electron injection layer 110 in the pixel area P where the light emitting layer 108 is formed may include: firstly, vaporizing the electron transport layer in the pixel area P where the light emitting layer 108 is formed through an evaporation process. The electron transport layer 109 is obtained from the material, and then the electron injection material is evaporated in the pixel region P where the electron transport layer 109 is formed by an evaporation process to obtain the electron injection layer 110.
  • a cathode is formed on the base substrate on which the electron injection layer is formed, and the cathode is electrically connected to the light emitting layer through the electron injection layer and the electron transport layer.
  • FIG. 15 shows a schematic diagram after forming a cathode 111 on a base substrate 101 formed with an electron injection layer 110 according to an embodiment of the present application.
  • the cathode 111 is on the base substrate.
  • the orthographic projection on 101 can cover the orthographic projection of the pixel defining layer 105 on the base substrate 101.
  • the cathode 111 is electrically connected to the side of the electron injection layer 110 away from the base substrate 101.
  • the cathode 111 may be a plate-shaped electrode.
  • the plate-shaped electrode may mean that the electrode is plate-shaped when viewed from the front view angle of the display substrate (for example, the top view angle of FIG. 15).
  • the cathode 111 and the electron injection layer 110 are connected to the side of the base substrate 101 away from the base substrate 101. Therefore, the cathode 111 passes through the electron injection layer 110 and The electron transport layer 109 is electrically connected to the light emitting layer 108.
  • the material of the cathode 111 may be metallic Mo (Chinese: molybdenum), metallic Cu (Chinese: copper), metallic Al (Chinese: aluminum), metallic Ti (Chinese: titanium) and alloy materials thereof.
  • forming the cathode 111 on the base substrate 101 on which the electron injection layer 110 is formed may include any of magnetron sputtering, thermal evaporation, or PECVD processes.
  • a layer of metallic Al is deposited on the base substrate 101 on which the electron injection layer 110 is formed to obtain a metallic Al material layer, and the metallic Al material layer is processed through a patterning process to obtain the cathode 111.
  • the hole injection layer 106, the hole transport layer 107, the light emitting layer 108, the electron transport layer 109, the electron injection layer 110 and the cathode 111 can be sequentially superimposed, the hole injection layer 106, the hole
  • the overlapping parts of the transport layer 107, the light-emitting layer 108, the electron transport layer 109, the electron injection layer 110, and the cathode 111 can constitute a light-emitting unit, and the light-emitting unit and thin film transistor can constitute a display unit (also called a pixel unit, sub-pixel or sub-pixel). Pixels, etc.).
  • the display substrate may include multiple light-emitting units
  • the cathode 111 may be a plate-shaped electrode
  • multiple light-emitting units may share the same cathode 111, which is not limited in the embodiment of the present application.
  • step 709 an encapsulation layer is formed on the base substrate on which the cathode is formed.
  • FIG. 16 shows a schematic diagram of an encapsulation layer 112 formed on a base substrate 101 formed with a cathode 111 according to an embodiment of the present application.
  • the encapsulation layer 112 may be a thin-film encapsulation layer or an encapsulation cover.
  • the encapsulation layer 112 may include an inorganic layer and an organic layer alternately stacked.
  • forming the encapsulation layer 112 on the base substrate 101 on which the cathode 111 is formed may include: The base substrate 101 of the cathode 111 is formed with alternately superimposed inorganic and organic layers; when the encapsulation layer 112 is an encapsulation cover plate, the encapsulation layer 112 may be a transparent substrate (for example, a glass substrate), and accordingly, in the case where the cathode 111 is formed.
  • Forming the encapsulation layer 112 on the base substrate 101 may include: fixing the encapsulation cover plate and the base substrate 101 opposite to each other, so that the encapsulation layer 112 is formed on the base substrate 101 on which the cathode 111 is formed.
  • FIG. 16 shows a schematic structural diagram of a display substrate provided by an embodiment of the present application.
  • the base substrate 101 may be a transparent substrate, for example, it may be a rigid substrate made of a light-guiding and non-metallic material such as glass, quartz, or transparent resin, or the base substrate 101 may be made of polyamide.
  • a flexible substrate made of flexible materials such as polyimide (English: Polyimide; PI).
  • the base substrate 101 can be placed on a rigid substrate to perform the above steps 701 to 709, and after performing the above steps 701 to 709, the rigid substrate is peeled off to obtain a flexible display substrate.
  • each film layer in the hole injection layer 106, the hole transport layer 107 and the light emitting layer 108 is made by an inkjet printing process, and the thickness of each film layer may depend on the solution forming the film layer.
  • the concentration of the solution and the length of time for inkjet printing of the solution, the preparation of the film layer through the inkjet printing process helps to save the preparation materials (such as luminescent materials).
  • the preparation materials such as luminescent materials.
  • the inkjet printing process it can be achieved by having multiple (such as 128 or 256)
  • the printing nozzle of the ejection port prints the solution, which helps to shorten the film preparation time.
  • the one patterning process involved may include photoresist coating, exposure, development, etching, and photoresist stripping.
  • the material layer (such as ITO material Layer) processing may include: coating a layer of photoresist on a material layer (for example, an ITO material layer) to form a photoresist layer, and using a mask to expose the photoresist layer so that the photoresist layer is completely exposed Afterwards, the development process is used to remove the photoresist in the fully exposed area and all the photoresist in the non-exposed area is retained.
  • the etching process is used to completely expose the area on the material layer (such as ITO material layer)
  • the corresponding area is etched, and finally the photoresist in the non-exposed area is stripped to obtain the corresponding structure (for example, the anode 104).
  • the photoresist is taken as an example for a positive photoresist.
  • the process of one patterning process can refer to the description in this paragraph. The embodiments are not repeated here.
  • the central area of the light-emitting layer is electrically connected to the anode, and the edge area of the light-emitting layer is insulated from the anode. Therefore, during the operation of the display substrate, The central area of the light-emitting layer emits light, and the edge area does not emit light. Even if the thickness of the edge area of the light-emitting layer is different from the thickness of the central area, since the thickness of the central area of the light-emitting layer is better, it will not affect the light-emitting brightness of the light-emitting layer. The uniformity.
  • embodiments of the present application also provide a display device, which may include the display substrate provided in the above-mentioned embodiments, and the display device may be an electroluminescent display device or a flexible display device.
  • the display device may be any product or component with a display function, such as electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, or wearable device.
  • a display function such as electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, or wearable device.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un substrat d'affichage et son procédé de fabrication, et un dispositif d'affichage. Le substrat d'affichage comprend un substrat de base, et une anode, une couche de définition de pixels et une couche électroluminescente qui sont disposées de manière séquentielle sur le substrat de base ; la couche de définition de pixels ayant une zone de pixels ; au moins une partie de l'anode étant située dans la zone de pixels ; la couche électroluminescente est située dans la zone de pixels ; une zone centrale de la couche électroluminescente est électriquement connectée à l'anode ; et une zone de bord de la couche électroluminescente est isolée de l'anode. La présente invention facilite la garantie de l'uniformité de la luminosité d'électroluminescence de la couche électroluminescente.
PCT/CN2020/076185 2019-04-09 2020-02-21 Substrat d'affichage et son procédé de fabrication, et dispositif d'affichage WO2020207124A1 (fr)

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CN110459690B (zh) * 2019-08-21 2022-06-10 合肥京东方卓印科技有限公司 显示基板及其制备方法、显示装置、喷墨打印的方法
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CN111293152B (zh) * 2020-02-20 2022-11-04 京东方科技集团股份有限公司 显示用基板及其制备方法、电致发光显示装置
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CN111584599B (zh) * 2020-05-27 2023-04-07 京东方科技集团股份有限公司 一种显示面板及其制作方法、显示装置
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