WO2020187056A1 - 阵列基板及其制造方法和显示面板 - Google Patents

阵列基板及其制造方法和显示面板 Download PDF

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WO2020187056A1
WO2020187056A1 PCT/CN2020/078101 CN2020078101W WO2020187056A1 WO 2020187056 A1 WO2020187056 A1 WO 2020187056A1 CN 2020078101 W CN2020078101 W CN 2020078101W WO 2020187056 A1 WO2020187056 A1 WO 2020187056A1
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layer
metal layer
nitrogen
ammonia
plasma process
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PCT/CN2020/078101
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English (en)
French (fr)
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卓恩宗
杨凤云
刘振
莫琼花
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惠科股份有限公司
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Priority claimed from CN201910196979.7A external-priority patent/CN109950254B/zh
Priority claimed from CN201910196977.8A external-priority patent/CN109950253B/zh
Priority claimed from CN201910197099.1A external-priority patent/CN109950255B/zh
Application filed by 惠科股份有限公司 filed Critical 惠科股份有限公司
Publication of WO2020187056A1 publication Critical patent/WO2020187056A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • This application relates to the field of display technology, and in particular to an array substrate, a manufacturing method thereof, and a display panel.
  • liquid crystal displays As the main medium for transmitting information, liquid crystal displays have been widely used in various fields of work and life. But few people know that a seemingly simple liquid crystal panel requires hundreds of processes to make.
  • a liquid crystal display panel is composed of an array substrate containing active elements such as thin film transistors, a color filter substrate containing elements such as color filters, and a liquid crystal cell sandwiched therein.
  • the transparent electrode layer on the surface of the array substrate needs to be The metal layer connection in the active switch.
  • the purpose of this application is to provide an array substrate, a manufacturing method thereof, and a display panel to improve the phenomenon of undercutting of the insulating layer.
  • the present application discloses an array substrate, including a substrate, an active switch and a transparent electrode layer, the active switch is arranged on the surface of the substrate, and the transparent electrode layer is arranged on the surface of the active switch.
  • the active switch includes a first metal layer, an adhesion layer disposed on the first metal layer, and a first insulating layer disposed on the adhesion layer, penetrating the first insulating layer and exposing the The via hole of the first metal layer; wherein, the transparent electrode layer is connected to the first metal layer through the via hole; the adhesion between the adhesion layer and the first insulating layer is greater than that of the first insulating layer The adhesion between the metal layer and the first insulating layer.
  • the application also discloses a manufacturing method of an array substrate, which includes the steps:
  • the adhesion force between the adhesion layer and the first insulating layer is greater than the adhesion force between the first metal layer and the first insulating layer.
  • the application also discloses a display panel, which includes a color filter substrate and an array substrate arranged oppositely, and a liquid crystal cell filled between the color filter substrate and the array substrate;
  • the array substrate includes a substrate, an active switch, and a transparent electrode layer.
  • the active switch is disposed on the surface of the substrate, the transparent electrode layer is disposed on the surface of the active switch, and the active switch includes a first metal.
  • this application adds an adhesion layer between the first metal layer and the first insulating layer, because the adhesion between the adhesion layer and the first insulating layer is greater than the The adhesion between the first metal layer and the first insulating layer is increased through the adhesion layer to increase the adhesion between the first metal layer and the first insulating layer, so that the first insulating layer is easily attached to the first metal when deposited On the layer, due to the better adhesion, the etching speed of the first insulating layer will be slower, thereby improving the undercutting phenomenon; if there is no adhesion layer, the adhesion effect of the first insulating layer and the first metal layer will be relatively poor. The surface of the insulating layer will be relatively fragile, resulting in an increase in the etching rate, and undercutting.
  • Figure 1 is a schematic diagram of an active switch
  • Figure 2 is a schematic diagram of an undercut phenomenon
  • Figure 3 is a schematic diagram of the effect of undercutting on the transparent electrode layer
  • Fig. 4 is a schematic diagram of an active switch of one embodiment of the present application.
  • FIG. 5 is a schematic diagram of an array substrate according to an embodiment of the present application.
  • FIG. 6 is a flowchart of a manufacturing method of an array substrate according to an embodiment of the present application.
  • FIG. 7 is a flowchart of a method for manufacturing an adhesion layer according to an embodiment of the present application.
  • FIG. 8 is a flowchart of a method for manufacturing an adhesion layer in another embodiment of the present application.
  • FIG. 9 is a flowchart of a method for manufacturing an adhesion layer in another embodiment of the present application.
  • FIG. 10 is a schematic diagram of a display panel according to another embodiment of the present application.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating relative importance or implicitly indicating the number of technical features indicated. Therefore, unless otherwise specified, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features; “plurality” means two or more.
  • the term “comprising” and any variations thereof means non-exclusive inclusion, the possibility of the presence or addition of one or more other features, integers, steps, operations, units, components, and/or combinations thereof.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection , It can also be electrical connection; it can be directly connected, it can also be indirectly connected through an intermediate medium, or the internal connection of two components.
  • installed should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection , It can also be electrical connection; it can be directly connected, it can also be indirectly connected through an intermediate medium, or the internal connection of two components.
  • the active switch 120 is disposed between the substrate 110 and the transparent electrode layer 130, and includes in order along the direction away from the substrate 110: a second metal layer 126, The second insulating layer 127, the first semiconductor layer 1281, the second semiconductor layer 1282, the first metal layer 121, and the first insulating layer 123, and further include a via 124 penetrating the first insulating layer 123 and penetrating the first insulating layer 123, The channel 125 of the first metal layer 121 and the second semiconductor layer 1282; wherein there is no adhesion layer 122 between the first metal layer 121 and the first insulating layer 123, and the first insulating layer 123 on the surface of the first metal layer 121 is being etched When the via 124 is formed, the undercut phenomenon is prone to occur.
  • M is the undercutting phenomenon on the first insulating layer 123.
  • M is the undercutting phenomenon on the first insulating layer 123.
  • the undercutting phenomenon In severe cases, it may directly cause the LCD panel to display abnormally. When the undercutting phenomenon is slight, it may become latent The reliability of the LCD panel will cause dark spots in the LCD panel display during use, which will affect the quality of the LCD panel.
  • N is the part of the transparent electrode layer 130 affected by undercutting. It can be seen from the figure that in the via 124 The thickness of the transparent electrode layer 130 is not uniform, which may cause problems such as abnormal display of the display panel 160.
  • an embodiment of the present application discloses an array substrate 100, which includes a substrate 110, an active switch 120, and a transparent electrode layer 130.
  • the active switch 120 is disposed on the surface of the substrate 110, and the transparent electrode layer 130 It is arranged on the surface of the active switch 120.
  • the active switch 120 includes a first metal layer 121, an adhesion layer 122 arranged on the first metal layer 121, a first insulating layer 123 arranged on the adhesion layer 122, passing through the first insulating layer 123 And expose the via hole 124 of the first metal layer 121; wherein the transparent electrode layer 130 is connected to the first metal layer 121 through the via hole 124; the adhesion between the adhesion layer 122 and the first insulating layer 123 is greater than that of the first metal layer The adhesion between 121 and the first insulating layer 123.
  • the thickness of the adhesion layer 122 is less than 1 nm.
  • the active switch 120 includes a thin film transistor
  • the first metal layer 121 is a source and drain electrode layer
  • the first insulating layer 123 is a passivation layer
  • the material of the transparent electrode layer 130 can be indium tin oxide (ITO) or indium zinc oxide.
  • Transparent conductive materials such as (IZO), aluminum zinc oxide (AZO), cadmium tin oxide (CTO), tin oxide (SnO 2 ), or zinc oxide (ZnO) are not limited.
  • the inventor knows that in the manufacture of the array substrate 100, the first insulating layer 123 on the surface of the first metal layer 121 is prone to undercutting when the via 124 is formed by etching, which may directly cause the liquid crystal panel in severe cases.
  • the display is abnormal; when the undercutting phenomenon is slight, it may become a latent reliability problem, causing problems such as dark spots on the LCD panel display during use, which will affect the quality of the display panel 160.
  • an adhesion layer 122 is added between the first metal layer 121 and the first insulating layer 123.
  • the adhesion between the adhesion layer 122 and the first insulating layer 123 is greater than that between the first metal layer 121 and the first insulating layer 123
  • the adhesion between the first metal layer 121 and the first insulating layer 123 is increased through the adhesion layer 122, so that the first insulating layer 123 is easy to adhere to the first metal layer 121 during deposition.
  • the etching speed of the first insulating layer 123 will be relatively slow, thereby improving the undercutting phenomenon; if there is no adhesion layer 122, the adhesion effect of the first insulating layer 123 and the first metal layer 121 is relatively poor, and the first insulating layer 123 The surface will be relatively fragile, resulting in faster etching speed, and undercutting.
  • the source and drain electrode layers include metallic molybdenum material
  • the passivation layer includes silicon nitride material
  • the adhesion layer 122 is molybdenum nitride material. Since the source and drain electrode layers contain metallic molybdenum, and the passivation layer contains silicon nitride, the molybdenum nitride material contains the same composition as the source and drain electrode layers and passivation layer, and has a good combination effect with the source and drain electrode layers and passivation layer. Therefore, the adhesion between the source and drain electrode layers and the passivation layer can be increased.
  • the active switch 120 further includes a second metal layer 126 disposed on the substrate 110, a second insulating layer 127 disposed on the second metal layer 126, and a semiconductor disposed on the second insulating layer 127.
  • the first metal layer 121 covers the surface of the semiconductor layer 128 and penetrates the trench 125 of the first metal layer 121 and the adhesion layer 122; wherein the first insulating layer 123 simultaneously covers the surface of the trench 125.
  • the semiconductor layer 128 may be a one-layer structure, or may be composed of a two-layer structure of the first semiconductor layer 1281 and the second semiconductor layer 1282, which is not limited here; if the semiconductor layer 128 is a single-layer structure, the semiconductor layer 128 It is an active layer, which is composed of hydrogenated amorphous silicon material. If the semiconductor layer 127 has a two-layer structure, then the first semiconductor layer 1281 is an active layer, which can be composed of hydrogenated amorphous silicon material or oxide. The oxide includes at least one of zinc oxide, tin oxide, indium oxide, and gallium oxide. The active layer is formed by sputtering and photomasking. The second semiconductor layer 1282 is an ohmic contact layer, which is composed of a hydrogenated non-doped phosphorous layer. The crystalline silicon thin film layer is also formed by sputtering and photomasking process.
  • the second metal layer 126 is a gate electrode layer, which is formed on the substrate 110 by sputtering and photomasking made of copper, aluminum, molybdenum, titanium or a laminated structure thereof; the second metal layer 126 is a gate insulating layer, On the gate electrode layer, a gate insulating layer covering the entire gate electrode layer is formed.
  • the gate insulating layer can be made of silicon oxide film, silicon nitride film, silicon oxynitride film, etc., which can be enhanced by plasma It is formed by vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD).
  • a manufacturing method of an array substrate includes the steps:
  • the adhesion force between the adhesion layer and the first insulating layer is greater than the adhesion force between the first metal layer and the first insulating layer.
  • an adhesion layer 122 is added between the first metal layer 121 and the first insulating layer 123. Since the adhesion between the adhesion layer 122 and the first insulating layer 123 is greater than that between the first metal layer 121 and the first insulating layer 123 The adhesion between the first metal layer 121 and the first insulating layer 123 is increased through the adhesion layer 122, so that the first insulating layer 123 is easy to adhere to the first metal layer 121 during deposition.
  • the etching speed of the first insulating layer 123 will be relatively slow, thereby improving the undercutting phenomenon; if there is no adhesion layer 122, the adhesion effect of the first insulating layer 123 and the first metal layer 121 is relatively poor, and the first insulating layer 123 The surface will be relatively fragile, resulting in faster etching speed, and undercutting.
  • the first metal layer 121 includes a metal molybdenum material
  • the first insulating layer 123 includes a silicon nitride material
  • the adhesion layer 122 is a molybdenum nitride material. Since the first layer contains metal molybdenum, the first insulating layer 123 contains silicon nitride.
  • the molybdenum nitride material contains the same composition as the first metal layer 121 and the first insulating layer 123, which is similar to the first metal layer 121 and the first insulating layer. 123 has a better bonding effect, and therefore can increase the adhesion between the first metal layer 121 and the first insulating layer 123.
  • step S2 nitrogen and ammonia gas are passed on the first metal layer to form an adhesion layer, and the specific steps are:
  • S23 Depositing nitrogen atoms and hydrogen atoms on the first metal layer, and chemically reacting with the first metal layer to form an adhesion layer.
  • step S22 nitrogen and ammonia are decomposed into nitrogen atoms and hydrogen atoms through a plasma process.
  • the plasma process can also be referred to as a plasma process, which is a process in the plasma-assisted chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) method or the plasma-assisted chemical vapor deposition method; because during the manufacturing process of the array substrate 100
  • PECVD plasma-assisted chemical vapor deposition
  • the film formation rate is a very important parameter, and the film formation rate in the film deposition process is relatively low, so the film deposition process takes a long time, making the film formation rate an important factor restricting the film deposition productivity.
  • the PECVD method has many advantages. One can realize the deposition of a large-area uniform thin film, and the other can deposit the thin film at a high rate, which makes the PECVD method more efficient in depositing thin films and can increase productivity.
  • step S22 the steps include:
  • step S222 the plasma process time of ammonia gas is between 4 seconds and 10 seconds. According to experimental tests, it is found that the plasma time of ammonia gas is better at 7 seconds; in step S224, the plasma process time of nitrogen gas Between 7 seconds and 60 seconds, experimental tests have found that the plasma time of nitrogen is better than 10 seconds to 20 seconds.
  • Ammonia gas is first introduced on the first metal layer 121 to perform the plasma process, and then nitrogen gas is introduced to perform the plasma process, to prevent the nitrogen atom concentration from being excessively high due to the first metal layer 121, After the reaction, the thickness of the adhesion layer 122 is increased, thereby generating conductivity, and causing the display panel 160 to have an afterimage phenomenon.
  • the ammonia plasma process time should be controlled; If the plasma process time of the two is too long, it will cause waste; if the plasma process time of the two is too short, they will not have their respective effects.
  • ammonia plasma process time is too short, the effect of the adhesion layer 122 will be relatively poor. If the plasma process time is too short, it will not have the effect of neutralizing ammonia. Therefore, it is necessary to control the plasma time of the two. Through repeated tests, the time range of the ammonia plasma process and the nitrogen plasma process are further reduced. The time frame can further increase production capacity.
  • S228 Decompose ammonia gas into hydrogen and nitrogen atoms through a plasma process.
  • the plasma process time of nitrogen gas is between 7 seconds and 60 seconds.
  • Experimental tests have found that the plasma time of nitrogen gas is preferably 10 seconds to 20 seconds; in step S74, the plasma process time of ammonia gas The time is between 4 seconds and 10 seconds. Through experimental tests, it is found that the plasma time of ammonia gas is preferably 7 seconds.
  • S230 Decompose nitrogen and ammonia into hydrogen atoms and nitrogen atoms through a plasma process.
  • adding nitrogen and ammonia can increase the content of nitrogen atoms in a short time, speed up the forming time of the adhesion layer, and improve the efficiency of the entire manufacturing process.
  • step S229 when ammonia and nitrogen are added at the same time, the ratio of ammonia to nitrogen is in the range of 0.1 to 1.
  • step S230 when ammonia and nitrogen are simultaneously added, the ammonia and nitrogen are directly combined through a plasma process Nitrogen is decomposed, and the plasma process time is between 7 seconds and 60 seconds; among them, the plasma process time of ammonia and nitrogen is preferably between 10 seconds and 30 seconds.
  • the ratio of ammonia to nitrogen is between 0.1 and 1.
  • the adhesion layer can be effective, and ammonia gas will not cause bad effects.
  • the power of the plasma process is controlled between 8 kW and 16 kW.
  • increasing the power of the plasma process to between 8KW and 16KW can accelerate the decomposition rate of ammonia and nitrogen, accelerate the forming rate of the adhesion layer 122, and further increase the production capacity; if If the power of the plasma process is too large, the atomic energy generated when ammonia and nitrogen are decomposed into atoms in a short time will be too large, which will cause etching damage to the active switch 120, so the power of the plasma process needs to be limited to 16KW Inside. Further, while the plasma process is being performed, the power of the plasma process is controlled between 10 kW and 12 kW. By more accurately controlling the power of the plasma process, the power of the plasma process can achieve better results in terms of increasing productivity and reducing harm.
  • a step of preheating the first metal layer is added before the step of introducing nitrogen and ammonia gas on the first metal layer to form the adhesion layer; wherein the first metal layer 121 is the source and drain electrode layer. .
  • Adding a pre-heat treatment to the source and drain electrode layers and the channel before the plasma process can make the passivation layer better contact the source and drain electrode layers during deposition, and can improve the appearance of the passivation layer during etching to form contact holes
  • preheating alone cannot completely solve the problem of undercutting, it can achieve a certain effect. In this way, the plasma process after preheating can better improve undercutting.
  • the pre-heat treatment time is 25 seconds.
  • the preheating time is 50 seconds.
  • the plasma process for ammonia and nitrogen the erosion phenomenon can be better improved and the preheating can be shortened. Processing time, thereby increasing productivity, after testing, the pre-heat treatment time is controlled at 25 seconds, combined with the ammonia and nitrogen plasma process, the effect of improving the erosion phenomenon is better.
  • step S2 ammonia gas can also be passed on the first metal layer to form an adhesion layer, and the specific steps are:
  • S26 Depositing nitrogen atoms on the first metal layer, and chemically reacting with the first metal layer to form the adhesion layer.
  • step S25 the ammonia gas is decomposed into nitrogen atoms and hydrogen atoms through a plasma process, and the time range of the plasma process is between 7 seconds and 60 seconds. It stands to reason that the longer the ammonia plasma process takes and the more nitrogen and hydrogen atoms contained in the adhesion layer 122, the better the effect of the adhesion layer 122. However, the longer the plasma process takes, the production capacity will be reduced, and the electrical The ammonia gas is decomposed into atoms during the plasma meeting. This process will generate atomic energy. These atomic energy will hit the surface of the active switch 120 channel 125, causing damage similar to etching. Therefore, the time of the ammonia plasma process should be controlled.
  • the time range of the ammonia plasma process is controlled between 7 seconds and 60 seconds. That is, the adhesion layer 122 can achieve the effect without fail. As for making the production time too long, the surface erosion effect on the channel 125 of the active switch 120 is also within the tolerance range.
  • the time range of the ammonia plasma process is between 10 seconds and 14 seconds, and 14 seconds is the optimal plasma process time when the adhesion layer 122 is formed. Through repeated tests, the time range of the ammonia plasma process is further reduced, and the production capacity is further improved, and the time is controlled at a certain value, so that the adhesion layer 122 can be better controlled during the production.
  • the power of the plasma process is controlled between 8 kW and 16 kW while the ammonia is in the plasma process.
  • the power of the plasma process is increased to between 8KW and 16KW, which can accelerate the decomposition rate of ammonia, accelerate the forming rate of the adhesion layer 122, and further increase the productivity; if the power of the plasma process If it is too large, the atomic energy generated when the ammonia gas is decomposed into atoms in a short time will be too large, which will cause etching damage to the active switch 120, so the power of the plasma process needs to be limited to 16KW.
  • the power of the plasma process is controlled between 10 kW and 12 kW, where 12 kW is the power of the best plasma process when the adhesion layer 122 is formed.
  • 12 kW is the power of the best plasma process when the adhesion layer 122 is formed.
  • a pre-heat treatment is applied to the source and drain electrode layers and the channel before the plasma process.
  • Adding a pre-heat treatment to the source and drain electrode layers and the channel before the plasma process can make the passivation layer better contact the source and drain electrode layers during deposition, and can improve the appearance of the passivation layer during etching to form contact holes
  • preheating alone cannot completely solve the problem of undercutting, it can achieve a certain effect. In this way, the plasma process after preheating can better improve undercutting.
  • the preheating time is 25 seconds.
  • the preheating time is 50 seconds, but with the ammonia plasma process, the undercut phenomenon can be better improved, the preheating time can be shortened, and the production capacity can be increased.
  • the combination with the ammonia plasma process has a better effect on improving the erosion phenomenon.
  • step S2 hydrogen and ammonia gas are passed on the first metal layer to form an adhesion layer, and the specific steps are:
  • S29 Depositing nitrogen atoms and hydrogen atoms on the first metal layer, and chemically reacting with the first metal layer to form the adhesion layer.
  • ammonia and hydrogen gas are introduced on the first metal layer 121 to form the adhesion layer 122.
  • Time and higher density of ammonia gas cause ammonia gas to accumulate in the channel 125, which makes the charged particles more active in the channel 125, and has better reliability in the channel 125, resulting in residual images. Therefore, in this application Ammonia gas and hydrogen gas are simultaneously introduced into the first metal layer 121, so that image retention is not likely to occur, which affects the display quality.
  • step S28 it includes steps:
  • S284 Decompose ammonia gas into hydrogen and nitrogen atoms through a plasma process.
  • the plasma process time of hydrogen is between 10 seconds and 60 seconds. According to experimental tests, it is better to control the plasma process time of hydrogen between 20 seconds and 30 seconds; in step S284, ammonia The plasma process time of gas is between 4 seconds and 14 seconds. Through experimental tests, it is found that it is better to control the plasma process time of ammonia gas between 6 seconds and 8 seconds, and it is better to control the plasma process time of ammonia gas. The time is controlled at 7 seconds.
  • Adding hydrogen gas and then ammonia gas can prevent the concentration of ammonia gas from being too high, which in turn affects the semiconductor layer 128 in the trench 125. It stands to reason that the longer the ammonia plasma process takes and the more nitrogen and hydrogen atoms contained in the adhesion layer 122, the better the effect of the adhesion layer 122. However, the longer the plasma process takes, the production capacity will be reduced, and the electrical In the plasma process, ammonia gas is decomposed into atoms. This process will generate atomic energy. These atomic energy will hit the surface of the active switch 120 channel 125, causing damage similar to etching.
  • the time of the ammonia plasma process should be controlled; and If the hydrogen plasma process time is too long, it will cause waste; if the plasma process time of the two is too short and cannot achieve their respective effects, if the ammonia plasma process time is too short, the effect of the adhesion layer 122 will be relatively poor. If the plasma time of hydrogen is too short, the effect of neutralizing ammonia cannot be achieved. Therefore, it is necessary to control the plasma process time of both. Through repeated tests, the time range of the ammonia plasma process and the hydrogen plasma process are further reduced. The time frame can further increase production capacity.
  • step S28 ammonia can also be added first, and then hydrogen.
  • the specific steps are:
  • the plasma process time of ammonia gas is between 4 seconds and 14 seconds. Through experimental tests, it is found that it is better to control the plasma process time of ammonia gas between 6 seconds and 8 seconds.
  • the plasma time of ammonia gas is controlled at 7 seconds; in step S288, the plasma process time of hydrogen is between 10 seconds and 60 seconds. It is found through experimental tests that the plasma process time of hydrogen is controlled between 20 seconds and 30 seconds. Seconds are better. Adding ammonia gas and then hydrogen gas can make the nitrogen atoms decomposed by ammonia gas be deposited on the first metal layer 121 in a relatively short time to form the adhesion layer 122.
  • step S28 hydrogen and ammonia can also be fed in at the same time.
  • the specific steps are:
  • S290 Decompose hydrogen and ammonia into hydrogen and nitrogen atoms through a plasma process.
  • Adding hydrogen and ammonia at the same time can reduce the time of the entire decomposition process and improve the efficiency of the entire process.
  • step S289 the ratio of ammonia gas to hydrogen gas is in the range of 0.1 to 1.
  • the content of ammonia cannot exceed the content of hydrogen. Otherwise, it will not have the effect of neutralizing ammonia.
  • the ratio of ammonia to hydrogen is between 0.1 and 1.
  • the adhesion layer can be effective, and ammonia gas will not cause bad effects.
  • step S290 when ammonia and hydrogen are added at the same time, the ammonia and hydrogen are directly decomposed through a plasma process, and the plasma process time is between 10 seconds and 60 seconds; among them, the best electricity for ammonia and hydrogen The pulping process time is between 20 seconds and 30 seconds.
  • the power of the plasma process is controlled between 8 kW and 16 kW.
  • increasing the power of the plasma process to between 8KW and 16KW can accelerate the decomposition rate of ammonia and hydrogen, accelerate the forming rate of the adhesion layer 122, and further increase the production capacity; if If the power of the plasma process is too large, the atomic energy generated when ammonia and hydrogen are decomposed into atoms in a short time will be too large, which will cause etching damage to the active switch 120, so the power of the plasma process needs to be limited to 16KW Inside. Further, while the plasma process is being performed, the power of the plasma process is controlled between 10 kW and 12 kW. By more accurately controlling the power of the plasma process, the power of the plasma process can achieve better results in terms of increasing productivity and reducing harm.
  • a step of preheating the first metal layer is added before the step of introducing hydrogen and ammonia gas on the first metal layer to form the adhesion layer; wherein the first metal layer 121 is the source and drain electrode layer .
  • Adding a pre-heat treatment to the source and drain electrode layers and the channel before the plasma process can make the passivation layer better contact the source and drain electrode layers during deposition, and can improve the appearance of the passivation layer during etching to form contact holes
  • preheating alone cannot completely solve the problem of undercutting, it can achieve a certain effect. In this way, the plasma process after preheating can better improve undercutting.
  • the pre-heat treatment time is 25 seconds.
  • the preheating time is 50 seconds.
  • the plasma process for ammonia and hydrogen the undercutting phenomenon can be better improved and the preheating can be shortened. Processing time, thereby increasing productivity, after testing, the pre-heat treatment time is controlled at 25 seconds, combined with the ammonia and hydrogen plasma process, the effect of improving the erosion phenomenon is better.
  • a display panel 160 is also disclosed, including a color filter substrate 140, the above-mentioned array substrate 100, and filling between the color filter substrate 140 and the array substrate 100 ⁇ LCD box 150.
  • the technical solution of the present application can be widely used in various display panels, such as twisted nematic (TN) display panels, in-plane switching (IPS) display panels, vertical alignment (Vertical Alignment, VA) ) Display panel, Multi-Domain Vertical Alignment (MVA) display panel, of course, it can also be other types of display panel, such as Organic Light-Emitting Diode (OLED) display panel.
  • TN twisted nematic
  • IPS in-plane switching
  • VA Vertical Alignment
  • MVA Multi-Domain Vertical Alignment
  • OLED Organic Light-Emitting Diode

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Abstract

一种阵列基板（100）及其制造方法和显示面板（160），包括依次堆叠的衬底(110)、主动开关(120)和透明电极层(130)，主动开关(120)包括依次堆叠的第一金属层(121)、附着层(122)和第一绝缘层(123)，还包括贯穿第一绝缘层(123)并暴露出第一金属层(121)的过孔(124)；透明电极层(130)通过过孔(124)与第一金属层(121)连接；附着层(122)与第一绝缘层(123)之间的附着力大于第一金属层(121)与第一绝缘层(123)之间的附着力。

Description

阵列基板及其制造方法和显示面板
本申请分别要求于2019年3月15日提交中国专利局，申请号为CN201910196977.8，申请名称为“一种阵列基板及其制造方法和显示面板”、于2019年3月15日提交中国专利局，申请号为CN201910196979.7，申请名称为“一种阵列基板及其制造方法和显示面板”以及于2019年3月15日提交中国专利局，申请号为CN201910197099.1，申请名称为“一种阵列基板及其制造方法和显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种阵列基板及其制造方法和显示面板。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
液晶显示器作为传递信息的主要媒介，已经被广泛应用于工作、生活中的各个领域。但是很少有人知道看似简单的液晶面板，其制作需要成百上千道工序。一般而言，液晶显示面板是由包含薄膜晶体管等主动元件的阵列基板、包含彩色滤光片等元件的彩膜基板以及夹置其中的液晶盒所组成，位于阵列基板表面的透明电极层需要与主动开关中的金属层连接。
在阵列基板的制作中，金属层表面的绝缘层在刻蚀形成接触孔洞时，容易出现钻蚀(Passivation Undercut)现象，严重时可能直接导致液晶面板显示异常。
发明内容
本申请的目的是提供一种阵列基板及其制造方法和显示面板，以改善绝缘层钻蚀现象。
为实现上述目的，本申请公开了一种阵列基板，包括衬底、主动开关和透明电极层，所述主动开关设置在所述衬底的表面，所述透明电极层设置在所述主动开关的表面，所述主动开关包括第一金属层，设置在所述第一金属层上的附着层，设置在所述附着层上的第一绝缘层，贯穿所述第一绝缘层并暴露出所述第一金属层的过孔；其中，所述透明电极层通过所述过孔与所述第一金属层连接；所述附着层与所述第一绝缘层之间的附着力大于所述第一金属层与所述第一绝缘层之间的附着力。
本申请还公开了一种阵列基板的制造方法，包括步骤：
形成第一金属层；
在所述第一金属层上通入含有氮元素的气体以形成附着层；
在所述附着层上形成第一绝缘层；以及
对所述第一绝缘层进行蚀刻形成暴露出所述第一金属层的过孔；
其中，所述附着层与所述第一绝缘层之间的附着力大于所述第一金属层与所述第一绝缘层之间的附着力。
本申请还公开了一种显示面板，包括对向设置的彩膜基板和阵列基板，以及填充在所述彩膜基板和所述阵列基板之间的液晶盒；
所述阵列基板包括衬底、主动开关和透明电极层，所述主动开关设置在所述衬底的表面，所述透明电极层设置在所述主动开关的表面，所述主动开关包括第一金属层，设置在所述第一金属层上的附着层，设置在所述附着层上的第一绝缘层，贯穿所述第一绝缘层并暴露出所述第一金属层的过孔；其中，所述透明电极层通过所述过孔与所述第一金属层连接；所述附着层与所述第一绝缘层之间的附着力大于所述第一金属层与所述第一绝缘层之间的附着力。
相对于主动开关中没有附着层的方案来说，本申请在第一金属层和第一绝缘层之间加入一道附着层，由于附着层与所述第一绝缘层之间的附着力大于所述第一金属层与所述第一绝缘层之间的附着力，通过附着层加大第一金属层和第一绝缘层之间的附着力，使第一绝缘层沉积时容易附着在第一金属层上，由于附着力较好，第一绝缘层的蚀刻速度会比较慢，进而改善钻蚀现象；如果没有这层附着层，第一绝缘层与第一金属层的附着效果比较差，第一绝缘层的表面会比较脆弱，导致蚀刻速度加快，从而出现钻蚀现象。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是一种主动开关的示意图；
图2是一种钻蚀现象的示意图；
图3是一种钻蚀现象对透明电极层影响的示意图；
图4是本申请的其中一实施例的主动开关的示意图；
图5是本申请的其中一实施例的阵列基板的示意图；
图6是本申请的其中一实施例的阵列基板制造方法的流程图；
图7是本申请的其中一实施例的附着层制造方法的流程图；
图8是本申请的其中另一实施例的附着层制造方法的流程图；
图9是本申请的其中另一实施例的附着层制造方法的流程图；
图10是本申请的其中另一实施例的一种显示面板的示意图。
具体实施方式
需要理解的是，这里所使用的术语、公开的具体结构和功能细节，仅仅是为了描述具体实施例，是代表性的，但是本申请可以通过许多替换形式来具体实现，不应被解释成仅受限于这里所阐述的实施例。
在本申请的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示相对重要性，或者隐含指明所指示的技术特征的数量。由此，除非另有说明，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征；“多个”的含义是两个或两个以上。术语“包括”及其任何变形，意为不排他的包含，可能存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
另外，“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系的术语，是基于附图所示的方位或相对位置关系描述的，仅是为了便于描述本申请的简化描述，而不是指示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，或是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
下面参考附图和可选的实施例对本申请作进一步说明。
如图1所示，发明人了解到的一种主动开关120，主动开关120设置在衬底110上与透明电极层130之间，沿背离衬底110的方向依次包括：第二金属层126、第二绝缘层127、第一半导体层1281、第二半导体层1282、第一金属层121和第一绝缘层123，还包括贯穿第一绝缘层123的过孔124和贯穿第一绝缘层123、第一金属层121和第二半导体层1282的沟道125；其中第一金属层121和第一绝缘层123之间没有附着层122，第一金属层121表面的第一绝缘层123在刻蚀形成过孔124时，容易出现钻蚀(Passivation Undercut)现象。
图2为第一绝缘层123发生钻蚀现象的示意图，图中M为第一绝缘层123上出现的钻蚀现象，严重时可能直接导致液晶面板显示异常，钻蚀现象轻微时，可能成为潜伏的信赖性问题，在使用中导致液晶面板显示出现暗点等问题，会影响液晶面板的品质。
图3为透明电极层130铺设在发生钻蚀的第一绝缘层123后的示意图，图中N为透明电 极层130受到钻蚀现象影响的部分，从图中可以看到，在过孔124中透明电极层130的厚度不均匀，从而会导致显示面板160的显示异常等问题。
如图4和图5所示，本申请实施例公开了一种阵列基板100，包括衬底110、主动开关120和透明电极层130，主动开关120设置在衬底110的表面，透明电极层130设置在主动开关120的表面，主动开关120包括第一金属层121，设置在第一金属层121上的附着层122，设置在附着层122上的第一绝缘层123，贯穿第一绝缘层123并暴露出第一金属层121的过孔124；其中，透明电极层130通过过孔124与第一金属层121连接；附着层122与第一绝缘层123之间的附着力大于第一金属层121与第一绝缘层123之间的附着力。
其中，附着层122的厚度小于1nm。其中，主动开关120包括薄膜晶体管，第一金属层121为源漏电极层，第一绝缘层123为钝化层，透明电极层130的材料可为铟锡氧化物(ITO)、铟锌氧化物(IZO)、铝锌氧化物(AZO)、镉锡氧化物(CTO)、氧化锡(SnO 2)、或氧化锌(ZnO)等透明导电材料，并不限定。
发明人知晓的在阵列基板100的制作中，第一金属层121表面的第一绝缘层123在刻蚀形成过孔124时，容易出现钻蚀(Passivation Undercut)现象，严重时可能直接导致液晶面板显示异常；钻蚀现象轻微时，可能成为潜伏的信赖性问题，在使用中导致液晶面板显示出现暗点等问题，会影响显示面板160的品质。本申请在第一金属层121和第一绝缘层123之间加入一道附着层122，由于附着层122与第一绝缘层123之间的附着力大于第一金属层121与第一绝缘层123之间的附着力，通过附着层122加大第一金属层121和第一绝缘层123之间的附着力，使第一绝缘层123沉积时容易附着在第一金属层121上，由于附着力较好，第一绝缘层123的蚀刻速度会比较慢，进而改善钻蚀现象；如果没有这层附着层122，第一绝缘层123与第一金属层121的附着效果比较差，第一绝缘层123的表面会比较脆弱，导致蚀刻速度加快，从而出现钻蚀现象。
在一实施例中，源漏电极层包括金属钼材料，钝化层包括氮化硅材料，附着层122为氮化钼材料。由于源漏电极层含有金属钼，钝化层含有氮化硅，氮化钼材料含有与源漏电极层和钝化层相同的成分，与源漏电极层和钝化层有较好的结合效果，因此能增加源漏电极层与钝化层之间的附着力。
如图4所示，主动开关120还包括，设置在衬底110上的第二金属层126，设置在第二金属层126上的第二绝缘层127，设置在第二绝缘层127上的半导体层128，第一金属层121覆盖在半导体层128的表面，贯穿第一金属层121和附着层122的沟道125；其中，第一绝缘层123同时覆盖沟道125的表面。其中，半导体层128可以为一层结构，也可以是由第一半导体层1281和第二半导体层1282两层结构构成，在此不做限定；若半导体层128为单层结构，那么半导体层128为有源层，有氢化非晶硅材料构成，若半导体层127为两层结构， 那么第一半导体层1281为有源层，可以由氢化非晶硅材料构成，也可以由氧化物构成，其中氧化物包含氧化锌、氧化锡、氧化铟及氧化镓中的至少一种，有源层通过溅射及光罩制程形成；第二半导体层1282为欧姆接触层，由掺杂磷构成的氢化非晶硅薄膜层，也是通过溅射及光罩制程形成。
其中，第二金属层126为栅极电极层，由铜、铝、钼、钛或其层叠结构通过溅射及光罩制程形成在衬底110上；第二金属层126为栅极绝缘层，在栅极电极层上，形成覆盖整个栅极电极层的栅极绝缘层，栅极绝缘层可以是由氧化硅膜、氮化硅膜、氮氧化硅膜等制成，可通过等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)方式来沉积形成。
如图6所示，作为本申请的另一个实施例，还公开了一种阵列基板的制造方法，制造方法包括步骤：
S1：形成第一金属层；
S2：在所述第一金属层上通入含有氮元素的气体以形成附着层；
S3：在所述附着层上形成第一绝缘层；
S4：对所述第一绝缘层进行蚀刻形成暴露出所述第一金属层的过孔；
其中，所述附着层与所述第一绝缘层之间的附着力大于所述第一金属层与所述第一绝缘层之间的附着力。
本申请在第一金属层121和第一绝缘层123之间加入一道附着层122，由于附着层122与第一绝缘层123之间的附着力大于第一金属层121与第一绝缘层123之间的附着力，通过附着层122加大第一金属层121和第一绝缘层123之间的附着力，使第一绝缘层123沉积时容易附着在第一金属层121上，由于附着力较好，第一绝缘层123的蚀刻速度会比较慢，进而改善钻蚀现象；如果没有这层附着层122，第一绝缘层123与第一金属层121的附着效果比较差，第一绝缘层123的表面会比较脆弱，导致蚀刻速度加快，从而出现钻蚀现象。
在一实施例中，第一金属层121包括金属钼材料，第一绝缘层123包括氮化硅材料，附着层122为氮化钼材料。由于第一层含有金属钼，第一绝缘层123含有氮化硅，氮化钼材料含有与第一金属层121和第一绝缘层123相同的成分，与第一金属层121和第一绝缘层123有较好的结合效果，因此能增加第一金属层121与第一绝缘层123之间的附着力。
如图7所示，在S2步骤中，在所述第一金属层上通入氮气和氨气形成附着层，其具体步骤为：
S21：在第一金属层上通入氮气和氨气；
S22：将氮气和氨气分解成氮原子和氢原子；
S23：将氮原子和氢原子沉积在所述第一金属层上，与所述第一金属层发生化学反应形 成附着层。
由于附着层122是氮原子和第一金属层121发生反应形成，所以在加入氨气时加入氮气能够分解更多的氮原子，提高附着层122的成型速度。在S22步骤中，氮气和氨气通过电浆制程分解成氮原子和氢原子。其中，电浆制程也可称为等离子制程，是等离子体辅助化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)方法或电浆辅助化学气相沉积方法中的一个流程；由于在阵列基板100制作过程中成膜速率是一个很重要的参数，而且薄膜沉积工序中的成膜速率较低，因此使得薄膜沉积工序的耗时相当长，从而使得成膜速率成为制约薄膜沉积产能的一个重要因素。PECVD方法相较于其它薄膜沉积方法而言具有多个好处，其一可以实现大面积均匀性薄膜的沉积，另外可以高速率沉积薄膜，使得PECVD方法沉积薄膜的效率更高，能够提高产能。
在S22步骤中，包括步骤：
S221：在第一金属层上加入氨气；
S222：通过电浆制程将氨气分解成氢原子和氮原子；
S223：在第一金属层上加入氮气；
S224：通过电浆制程将氮气分解成氮原子。
在S222步骤中，氨气的电浆制程时间在4秒至10秒之间，通过实验测试发现，氨气的电浆时间是在7秒比较好；在S224步骤中，氮气的电浆制程时间在7秒至60秒之间，通过实验测试发现，氮气的电浆时间在10秒到20秒比较好。
先在第一金属层121上通入氨气进行电浆制程，再通入氮气进行电浆制程，防止一开始通入氮气进行电浆制程导致氮原子的浓度过大，与第一金属层121反应后生成的附着层122厚度增加，从而产生导电性，使显示面板160出现残影现象。
按理说氨气的电浆制程的时间越长，附着层122中含有的氮原子和氢原子越多，附着层122的效果越好，但是电浆制程的时间过长会使产能降低，同时电浆会时氨气分解成原子，这一过程会产生原子能量，这些原子能量会撞击主动开关120沟道125的表面，造成类似蚀刻的危害，所以应该控制氨气电浆制程的时间；而氮气的电浆制程时间过长又会造成浪费；如果两者的电浆制程时间过短有起不到各自的效果，氨气电浆制程时间过短的话，附着层122的效果会比较差，氮气的电浆制程时间过短则起不到中和氨气的效果，所以需要控制两者的电浆时间，通过反复测试，进一步地缩小氨气电浆制程的时间范围和氮气的电浆制程的时间范围，能够进一步提高产能。
当然，还可以先加入氮气再加入氨气，具体步骤为：
S225：在第一金属层上加入氮气；
S226：通过电浆制程将氮气分解成氮原子；
S227：在第一金属层上加入氨气；
S228：通过电浆制程将氨气分解成氢原子和氮原子。
在S225步骤中，氮气的电浆制程时间在7秒至60秒之间，通过实验测试发现，氮气的电浆时间在10秒到20秒比较好；在S74步骤中，氨气的电浆制程时间在4秒至10秒之间，通过实验测试发现，氨气的电浆时间是在7秒比较好。
也可以同时加入氨气和氮气，具体步骤为：
S229：同时在第一金属层上加入氮气和氨气；
S230：通过电浆制程将氮气和氨气分解成氢原子和氮原子。
同时加入氮气和氨气能够提高在短时间内提高氮原子的含量，加快附着层的成型时间，提高整个制程的效率。
在S229步骤中，同时加入氨气和氮气时，氨气和氮气的比例在0.1到1的范围内；在S230步骤中，同时加入氨气和氮气时，直接通过一道电浆制程将氨气和氮气进行分解，电浆制程时间在7秒至60秒之间；其中，氨气和氮气的电浆制程时间在10秒至30秒之间更好。同时通入氨气和氮气时，氨气的含量不能超过氮气的含量，否侧就不能起到中和氨气的效果，经过测试氨气和氮气的比例在0.1到1之间时，生成的附着层既能起到效果，氨气又不会造成不好的影响。
在一实施例中，在进行电浆制程的同时，将电浆制程的功率控制在8KW至16KW之间。氨气和氮气在进行电浆制程时，将电浆制程的功率增大到8KW到16KW之间，能够加快氨气和氮气的分解速率，加快附着层122的成型速率，进一步地提高产能；如果电浆制程的功率过大则会使氨气和氮气在短时间内分解成原子时产生的原子能量过大，会对主动开关120的造成蚀刻危害，所以需要将电浆制程的功率限制在16KW内。进一步地，在进行电浆制程的同时，将电浆制程的功率控制在10KW至12KW之间。通过更精确地控制电浆制程的功率，使得电浆制程的功率在提高产能和减少危害两方面取得更好的效果。
在一实施例中，在第一金属层上通入氮气和氨气形成附着层的步骤前，增加一道对第一金属层进行预热处理的步骤；其中第一金属层121为源漏电极层。在电浆制程前对源漏电极层和沟道加一道预热处理，能够使钝化层在沉积时与源漏电极层的接触更好，能够改善钝化层在刻蚀形成接触孔洞时出现的钻蚀现象，虽然单纯的预热处理并不能彻底的解决钻蚀的问题，但是能够起到一定的效果，这样配合预热处理后的电浆制程，能够更好地改善钻蚀现象。具体的，预热处理时间为25秒。一般情况下，如果没有氨气和氮气的电浆制程的话，预热处理时间是在50秒，而有了氨气和氮气的电浆制程，可以更好地改善钻蚀现象，可以缩短预热处理时间，从而提高产能，经测试，将预热处理时间控制在25秒时，与氨气和氮气的电浆制程结合对钻蚀现象改善的效果更好。
如图8所示，在S2步骤中，还可以在所述第一金属层上通入氨气形成附着层，其具体步骤为：
S24：在第一金属层上通入氨气；
S25：将氨气分解成氮原子和氢原子；
S26：将氮原子沉积在所述第一金属层上，与所述第一金属层发生化学反应形成所述附着层。
在一实施例中，在S25步骤中，氨气通过电浆制程分解成氮原子和氢原子，且电浆制程的时间范围在7秒至60秒之间。按理说氨气的电浆制程的时间越长，附着层122中含有的氮原子和氢原子越多，附着层122的效果越好，但是电浆制程的时间过长会使产能降低，同时电浆会时氨气分解成原子，这一过程会产生原子能量，这些原子能量会撞击主动开关120沟道125的表面，造成类似蚀刻的危害，所以应该控制氨气电浆制程的时间，既能增加产能又能减少氨气电浆制程带来的负面危害，经过试验测试，将氨气电浆制程的时间范围控制在7秒到60秒之间，即能使附着层122达到效果，又不至于使生产时间过长，对主动开关120沟道125的表面侵蚀效果也在承受范围内。另外，氨气的电浆制程的时间范围在10秒至14秒之间，其中14秒为附着层122成形时的最佳电浆制程的时间。通过反复测试，进一步地缩小氨气电浆制程的时间范围，进一步提高产能，而将时间控制在一个确定的数值，使得在附着层122在制作时更好控制成型。
在一实施例中，在氨气进行电浆制程的同时，将电浆制程的功率控制在8KW至16KW之间。氨气在电浆制程时，将电浆制程的功率增大到8KW到16KW之间，能够加快氨气的分解速率，加快附着层122的成型速率，进一步地提高产能；如果电浆制程的功率过大则会使氨气在短时间内分解成原子时产生的原子能量过大，会对主动开关120的造成蚀刻危害，所以需要将电浆制程的功率限制在16KW内。进一步地，将电浆制程的功率控制在10KW至12KW之间，其中12KW为附着层122成形时的最佳电浆制程的功率。通过更精确地控制电浆制程的功率，使得电浆制程的功率在提高产能和减少危害两方面取得更好的效果，通过反复测试，确定12KW为氨气的最佳电浆制程的功率，通过确切的数值使得在附着层122在制作时更好控制。
另外，在电浆制程前对源漏电极层和沟道施加一道预热处理。在电浆制程前对源漏电极层和沟道加一道预热处理，能够使钝化层在沉积时与源漏电极层的接触更好，能够改善钝化层在刻蚀形成接触孔洞时出现的钻蚀现象，虽然单纯的预热处理并不能彻底的解决钻蚀的问题，但是能够起到一定的效果，这样配合预热处理后的电浆制程，能够更好地改善钻蚀现象。而且，预热处理时间为25秒。一般情况下，如果没有氨气电浆制程的话，预热处理时间是在50秒，而有了氨气电浆制程，可以更好地改善钻蚀现象，可以缩短预热处理时间，从而 提高产能，经测试，将预热处理时间控制在25秒时，与氨气电浆制程结合对钻蚀现象改善的效果更好。
如图9所示，在S2步骤中，在所述第一金属层上通入氢气和氨气形成附着层，其具体步骤为：
S27：在第一金属层上通入氢气和氨气；
S28：将氢气和氨气分解成氮原子和氢原子；
S29：将氮原子和氢原子沉积在所述第一金属层上，与所述第一金属层发生化学反应形成所述附着层。
本申请在第一金属层121上通入氨气和氢气形成附着层122，这样首先可以减少通入氨气的时间，另外还能减少氨气的密度，防止第一金属层121上存在较长时间和较高密度的氨气，导致氨气在沟道125中蓄积，使带电粒子在沟道125中比较活跃，对沟道125的信赖性较好，从而出现残影，所以本申请中在第一金属层121上同时通入氨气和氢气，这样就不容易产生残影，影响显示品质。
在S28步骤中，包括步骤：
S281：在第一金属层上加入氢气；
S282：通过电浆制程将氢气分解成氢原子；
S283：在第一金属层上加入氨气；
S284：通过电浆制程将氨气分解成氢原子和氮原子。
在S282步骤中，氢气的电浆制程时间在10秒到60秒之间，通过实验测试发现，将氢气的电浆制程时间控制在20秒至30秒之间更好；在S284步骤中，氨气的电浆制程时间在4秒至14秒之间，通过实验测试发现，将氨气的电浆制程时间控制在6秒至8秒之间更好，最好是能将氨气的电浆时间控制在7秒。
先加入氢气再加入氨气能够防止氨气的浓度过大，进而影响沟道125中的半导体层128。按理说氨气的电浆制程的时间越长，附着层122中含有的氮原子和氢原子越多，附着层122的效果越好，但是电浆制程的时间过长会使产能降低，同时电浆制程会时氨气分解成原子，这一过程会产生原子能量，这些原子能量会撞击主动开关120沟道125的表面，造成类似蚀刻的危害，所以应该控制氨气电浆制程的时间；而氢气的电浆制程时间过长又会造成浪费；如果两者的电浆制程时间过短又起不到各自的效果，氨气电浆制程时间过短的话，附着层122的效果会比较差，氢气的电浆时间过短则起不到中和氨气的效果，所以需要控制两者的电浆制程时间，通过反复测试，进一步地缩小氨气电浆制程的时间范围和氢气的电浆制程时间范围，能够进一步提高产能。
当然，S28步骤中，还可以先加入氨气，再加入氢气，具体步骤为：
S285：在第一金属层上加入氨气；
S286：通过电浆制程将氨气分解成氢原子和氮原子；
S287：在第一金属层上加入氢气；
S288：通过电浆制程将氢气分解成氢原子。
在S286步骤中，氨气的电浆制程时间在4秒至14秒之间，通过实验测试发现，将氨气的电浆制程时间控制在6秒至8秒之间更好，最好是能将氨气的电浆时间控制在7秒；在S288步骤中，氢气的电浆制程时间在10秒到60秒之间，通过实验测试发现，将氢气的电浆制程时间控制在20秒至30秒之间更好。先加入氨气再加入氢气能够使氨气分解后的氮原子在较短时间内沉积在第一金属层121从而形成附着层122。
在S28步骤中，还可以同时通入氢气和氨气，具体步骤为：
S289：同时在第一金属层上加入氢气和氨气；
S290：通过电浆制程将氢气和氨气分解成氢原子和氮原子。
同时加入氢气和氨气能够减少整个分解过程的时间，提高整个制程的效率。
在S289步骤中，氨气和氢气的比例在0.1到1的范围内。同时通入氨气和氢气时，氨气的含量不能超过氢气的含量，否侧就不能起到中和氨气的效果，经过测试氨气和氢气的比例在0.1到1之间时，生成的附着层既能起到效果，氨气又不会造成不好的影响。在S290步骤中，同时加入氨气和氢气时，直接通过一道电浆制程将氨气和氢气进行分解，电浆制程时间在10秒至60秒之间；其中，氨气和氢气的最佳电浆制程时间是在20秒到30秒之间。
在一实施例中，在进行电浆制程的同时，将电浆制程的功率控制在8KW至16KW之间。氨气和氢气在进行电浆制程时，将电浆制程的功率增大到8KW到16KW之间，能够加快氨气和氢气的分解速率，加快附着层122的成型速率，进一步地提高产能；如果电浆制程的功率过大则会使氨气和氢气在短时间内分解成原子时产生的原子能量过大，会对主动开关120的造成蚀刻危害，所以需要将电浆制程的功率限制在16KW内。进一步地，在进行电浆制程的同时，将电浆制程的功率控制在10KW至12KW之间。通过更精确地控制电浆制程的功率，使得电浆制程的功率在提高产能和减少危害两方面取得更好的效果。
在一实施例中，在第一金属层上通入氢气和氨气形成附着层的步骤前，增加一道对第一金属层进行预热处理的步骤；其中第一金属层121为源漏电极层。在电浆制程前对源漏电极层和沟道加一道预热处理，能够使钝化层在沉积时与源漏电极层的接触更好，能够改善钝化层在刻蚀形成接触孔洞时出现的钻蚀现象，虽然单纯的预热处理并不能彻底的解决钻蚀的问题，但是能够起到一定的效果，这样配合预热处理后的电浆制程，能够更好地改善钻蚀现象。具体的，预热处理时间为25秒。一般情况下，如果没有氨气和氢气的电浆制程的话，预热处理时间是在50秒，而有了氨气和氢气的电浆制程，可以更好地改善钻蚀现象，可以缩短 预热处理时间，从而提高产能，经测试，将预热处理时间控制在25秒时，与氨气和氢气的电浆制程结合对钻蚀现象改善的效果更好。
还作为本申请的另一实施例，如图10所示，还公开了一种显示面板160，包括彩膜基板140，上述的阵列基板100，以及填充在彩膜基板140和阵列基板100之间的液晶盒150。
需要说明的是，本方案中涉及到的各步骤的限定，在不影响具体方案实施的前提下，并不认定为对步骤先后顺序做出限定，写在前面的步骤可以是在先执行的，也可以是在后执行的，甚至也可以是同时执行的，只要能实施本方案，都应当视为属于本申请的保护范围。
本申请的技术方案可以广泛用于各种显示面板，如扭曲向列型(Twisted Nematic，TN)显示面板、平面转换型(In-Plane Switching，IPS)显示面板、垂直配向型(Vertical Alignment，VA)显示面板、多象限垂直配向型(Multi-Domain Vertical Alignment，MVA)显示面板，当然，也可以是其他类型的显示面板，如有机发光二极管(Organic Light-Emitting Diode，OLED)显示面板，均可适用上述方案。
以上内容是结合具体的可选的实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (20)

  1. 一种阵列基板，包括衬底、主动开关和透明电极层，所述主动开关设置在所述衬底的表面，所述透明电极层设置在所述主动开关的表面，所述主动开关包括：
    第一金属层；
    附着层，设置在所述第一金属层的表面；
    第一绝缘层，设置在所述附着层的表面；以及
    过孔，贯穿所述第一绝缘层，暴露出所述第一金属层；
    其中，所述透明电极层通过所述过孔与所述第一金属层连接；
    所述附着层与所述第一绝缘层之间的附着力大于所述第一金属层与所述第一绝缘层之间的附着力。
  2. 如权利要求1所述的一种阵列基板，其中，所述第一金属层包括金属钼材料，所述第一绝缘层包括氮化硅材料，所述附着层为氮化钼材料。
  3. 如权利要求1所述的一种阵列基板，其中，所述附着层的厚度不超过1nm。
  4. 一种阵列基板的制造方法，包括步骤：
    形成第一金属层；
    在所述第一金属层上通入含有氮元素的气体以形成附着层；
    在所述附着层上形成第一绝缘层；以及
    对所述第一绝缘层进行蚀刻形成暴露出所述第一金属层的过孔；
    其中，所述附着层与所述第一绝缘层之间的附着力大于所述第一金属层与所述第一绝缘层之间的附着力。
  5. 如权利要求4所述的一种阵列基板的制造方法，其中，所述在所述第一金属层上通入含有氮元素的气体以形成附着层的步骤中，在所述第一金属层上通入氮气和氨气形成附着层，其具体步骤为：
    在第一金属层上通入氮气和氨气；
    将氮气和氨气分解成氮原子和氢原子；以及
    将氮原子和氢原子沉积在所述第一金属层上，与所述第一金属层发生化学反应形成附着层。
  6. 如权利要求5所述的一种阵列基板的制造方法，其中，所述将氮气和氨气分解成氮原子和氢原子的步骤中，包括步骤：
    在所述第一金属层上加入氨气；
    通过电浆制程将氨气分解成氢原子和氮原子。
    在所述第一金属层上加入氮气；以及
    通过电浆制程将氮气分解成氮原子。
  7. 如权利要求6所述的一种阵列基板的制造方法，其中，氮气的电浆制程时间在7秒至60秒之间，氨气的电浆制程时间在4秒至10秒之间。
  8. 如权利要求6所述的一种阵列基板的制造方法，其中，在进行电浆制程的同时，将电浆制程的功率控制在8千瓦至16千瓦之间。
  9. 如权利要求4所述的一种阵列基板的制造方法，其中，在所述第一金属层上通入含有氮元素的气体以形成附着层的步骤前，增加一道对所述第一金属层进行预热处理的步骤。
  10. 如权利要求9所述的一种阵列基板的制造方法，其中，所述预热处理的时间为25秒。
  11. 如权利要求5所述的一种阵列基板的制造方法，其中，所述将氮气和氨气分解成氮原子和氢原子的步骤中，包括步骤：
    同时在第一金属层上加入氮气和氨气；以及
    通过电浆制程将氮气和氨气分解成氢原子和氮原子。
  12. 如权利要求11所述的一种阵列基板的制造方法，其中，所述氨气和氮气的比例在0.1到1的范围内。
  13. 如权利要求11所述的一种阵列基板的制造方法，其中，氨气和氮气的电浆制程时间在7到60秒之间。
  14. 如权利要求4所述的一种阵列基板的制造方法，其中，所述在所述第一金属层上通入含有氮元素的气体以形成附着层的步骤中，在所述第一金属层上通入氨气形成附着层，其具体步骤为：
    在第一金属层上通入氨气；
    将氨气分解成氮原子和氢原子；以及
    将氮原子沉积在所述第一金属层上，与所述第一金属层发生化学反应形成所述附着层。
  15. 如权利要求14所述的一种阵列基板的制造方法，其中，氨气通过电浆制程分解成氮原子和氢原子，且电浆制程的时间范围在7秒至60秒之间。
  16. 如权利要求4所述的一种阵列基板的制造方法，其中，所述在所述第一金属层上通入含有氮元素的气体以形成附着层的步骤中，在所述第一金属层上通入氢气和氨气形成附着层，其具体步骤为：
    在第一金属层上通入氢气和氨气；
    将氢气和氨气分解成氮原子和氢原子；以及
    将氮原子和氢原子沉积在所述第一金属层上，与所述第一金属层发生化学反应形成所述 附着层。
  17. 如权利要求16所述的一种阵列基板的制造方法，其中，所述将氢气和氨气分解成氮原子和氢原子的步骤中，包括步骤：
    在所述第一金属层上加入氢气；
    通过电浆制程将氢气分解成氢原子；
    在所述第一金属层上加入氨气；以及
    通过电浆制程将氨气分解成氢原子和氮原子。
  18. 如权利要求16所述的一种阵列基板的制造方法，其中，氢气的电浆制程时间在10秒至60秒之间，氨气的电浆制程时间在4秒至14秒之间。
  19. 如权利要求16所述的一种阵列基板的制造方法，其中，在进行电浆制程的同时，将电浆制程的功率控制在8千瓦至16千瓦之间。
  20. 一种显示面板，包括对向设置的彩膜基板和阵列基板，以及填充在所述彩膜基板和所述阵列基板之间的液晶盒；
    所述阵列基板包括衬底、主动开关和透明电极层，所述主动开关设置在所述衬底的表面，所述透明电极层设置在所述主动开关的表面，所述主动开关包括：
    第一金属层；
    附着层，设置在所述第一金属层的表面；
    第一绝缘层，设置在所述附着层的表面；以及
    过孔，贯穿所述第一绝缘层，暴露出所述第一金属层；
    其中，所述透明电极层通过所述过孔与所述第一金属层连接；
    所述附着层与所述第一绝缘层之间的附着力大于所述第一金属层与所述第一绝缘层之间的附着力。
PCT/CN2020/078101 2019-03-15 2020-03-06 阵列基板及其制造方法和显示面板 WO2020187056A1 (zh)

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